JP2014079750A - Gas processing device, gas processing cartridge, and gas processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a gas processing device having excellent processing capacity.SOLUTION: A gas processing device 1 comprises: a first processing chamber 15; a second processing chamber 16; and a processing agent 17 for processing a gas. A processed gas is introduced into the first processing chamber 15. The gas is introduced from the first processing chamber 15 into the second processing chamber 16. A gas which has been processed is exhausted from the second processing chamber 16. The processing agent 17 is disposed in the first and second processing chambers 15, 16. A first processing chamber 15 side end part of the second processing chamber 16 is formed as a hollow space.

Description

  The present invention relates to a semiconductor, a gas processing apparatus such as dry etching exhaust gas discharged in a liquid crystal manufacturing process, a gas processing cartridge, and a gas processing method.

  In recent years, regulations on exhaust gas have become stricter in order to reduce the environmental load caused by exhaust gas. Along with this, various exhaust gas treatment methods have been proposed (see, for example, Patent Document 1).

JP-A-8-186066

  There is a desire to improve the processing capacity of gas processing equipment.

  The main subject of this invention is providing the gas processing apparatus which has the outstanding processing capacity.

  The gas processing apparatus according to the present invention includes a first processing chamber, a second processing chamber, and a processing agent for processing the gas. A gas to be processed is introduced into the first processing chamber. Gas is introduced into the second processing chamber from the first processing chamber. The processed gas is discharged from the second processing chamber. The processing agent is disposed in each of the first and second processing chambers. The first processing chamber side end of the second processing chamber is hollow.

  The gas processing cartridge according to the present invention includes a first processing chamber, a second processing chamber, and a processing agent for processing the gas. A gas to be processed is introduced into the first processing chamber. Gas is introduced into the second processing chamber from the first processing chamber. The processed gas is discharged from the second processing chamber. The processing agent is disposed in each of the first and second processing chambers. The first processing chamber side end of the second processing chamber is hollow.

  In the gas processing method according to the present invention, the gas is processed using the gas processing apparatus.

  ADVANTAGE OF THE INVENTION According to this invention, the gas processing apparatus which has the outstanding processing capacity can be provided.

1 is a schematic cross-sectional view of a gas processing apparatus according to a first embodiment. It is typical sectional drawing of the processing apparatus of the gas which concerns on 2nd Embodiment. It is typical sectional drawing of the processing apparatus of the gas which concerns on 3rd Embodiment. It is typical sectional drawing of the processing apparatus of the gas which concerns on 4th Embodiment. It is typical sectional drawing of the processing apparatus of the gas which concerns on 5th Embodiment. It is a schematic diagram of the gas processing apparatus which concerns on 5th Embodiment. 6 is a schematic cross-sectional view of a gas processing apparatus according to Comparative Example 1. FIG. 6 is a schematic diagram of a gas processing apparatus according to Comparative Example 1. FIG.

(First embodiment)
FIG. 1 is a schematic cross-sectional view of a gas processing apparatus 1a according to the present embodiment. The gas processing apparatus 1a is an apparatus for processing and detoxifying a gas containing a component toxic to the human body, the environment, or the like. The processing apparatus 1a is preferably used for processing a gas containing a halogen compound such as boron trichloride discharged from a dry etching apparatus such as an aluminum film.

  The supply amount of the gas to be processed to the gas processing apparatus 1a is, for example, preferably 1 L / min to 2000 L / min, and more preferably 5 L / min to 1000 L / min. The temperature of the gas to be processed supplied to the gas processing apparatus 1a is preferably 150 ° C. or lower, and more preferably 100 ° C. or lower.

  As illustrated in FIG. 1, the processing apparatus 1 a includes a first housing 13 and a second housing 14. A first processing chamber 15 is provided in the first housing 13. On the other hand, the second housing 14 is provided with a second processing chamber 16.

  A gas to be processed is introduced into the first processing chamber 15 from the inlet 11. The first processing chamber 15 is connected to the second processing chamber 16 by a pipe 18. The gas that has passed through the first processing chamber 15 via the pipe 18 is introduced into the second processing chamber 16. The discharge port 12 is connected to the end of the second processing chamber 16 opposite to the side to which the pipe 18 is connected. The gas that has passed through the second processing chamber 16 is discharged from the discharge port 12. Therefore, the first processing chamber 15 and the second processing chamber 16 are connected in series between the introduction port 11 and the discharge port 12.

  A processing agent 17 is disposed in each of the first processing chamber 15 and the second processing chamber 16. The processing agent 17 is a chemical | medical agent for processing to-be-processed gas. Specifically, the treatment agent 17 reduces the concentration of harmful substances contained in the gas to be treated. The processing gas 17 is processed by the processing agent 17, and the processed gas is discharged from the discharge port 12.

  In the present embodiment, the processing agent 17 is disposed in each of the first and second processing chambers 15 and 16 as processing particles containing the processing agent.

The treatment agent 17 is not particularly limited as long as it is a chemical that can treat the gas to be treated. The processing agent 17 may be, for example, an adsorbent that adsorbs a substance that is to be reduced in concentration, contained in the gas to be processed, or a reactant that reacts with a substance that is to be reduced in concentration, or a concentration. The catalyst etc. which make the substance which is going to reduce may react. The treatment agent 17 may include at least two of an adsorbent, a reactant, and a catalyst. The processing agent 17 can be appropriately selected according to the type of gas to be processed. Specific examples of the adsorbent include zeolite, activated carbon, activated clay, iron oxide, calcium hydroxide activated carbon, impregnated activated carbon (activated carbon supporting at least one of copper oxide and zinc oxide), and the like. Specific examples of the reactant include iron oxide and manganese oxide. Specific examples of iron oxides preferably used include iron (II) oxide (FeO) and iron (III) oxide (Fe ₂ O ₃ ). Specific examples of manganese oxide preferably used include manganese monoxide (MnO), manganese dioxide (MnO ₂ ), trimanganese tetroxide (Mn ₃ O ₄ ), dimanganese heptaoxide (Mn ₂ O ₇ ), and the like. Can be mentioned. Specific examples of the catalyst include copper oxide (CuO) and manganese oxide (MnO).

  The processing agent 17 is filled in a part of the first processing chamber 15. Specifically, the processing agent 17 is filled in a portion of the first processing chamber 15 excluding both ends in the gas flow direction. For this reason, the end of the first processing chamber 15 on the inlet 11 side (the upstream end of the first processing chamber 15) is hollow. The end of the first processing chamber 15 on the pipe 18 side (the downstream end of the first processing chamber 15) is hollow.

  Similarly, the processing agent 17 is filled in a part of the second processing chamber 16. Specifically, the processing agent 17 is filled in a portion of the second processing chamber 16 excluding both ends in the gas flow direction. Therefore, the end of the second processing chamber 16 on the introduction port 11 side (the upstream end of the second processing chamber 16) is hollow. The end of the second processing chamber 16 on the discharge port 12 side (the downstream end of the second processing chamber 16) is hollow.

  Conventionally, it has been considered that the processing capability of a gas processing apparatus depends exclusively on the amount of processing agent contained in the processing apparatus. As a result of intensive studies, the present inventors have determined that the processing capacity of the processing apparatus is not only the amount of the processing agent contained in the processing apparatus but also the length (L) of the portion of the processing chamber where the processing agent is disposed. It has been found that it also depends on the value (L / D) obtained by dividing by the average equivalent diameter (D) of the part. Specifically, the present inventors have found that the processing capability of the processing device increases as L / D increases.

  However, in practice, L / D cannot often be made sufficiently large due to restrictions such as the arrangement space of the processing apparatus. In view of this, the present inventors have conceived that the first processing chamber 15 and the second processing chamber 16 are connected in series by a pipe 18 in order to increase L / D. However, surprisingly, when a plurality of processing chambers are connected in series, the processing capability is lower than when a single processing chamber having the same L / D is provided. The reason for this is not clear, but it is conceivable that in the second processing chamber, there is a processing agent in which the flow of the gas to be processed is uneven and the gas to be processed is difficult to contact.

  Therefore, the present inventors dare to hollow the end portion 16b of the second processing chamber 16 on the first processing chamber 15 side in spite of a decrease in the amount of the processing agent 17 in the second processing chamber 16. I came up with a configuration to make. By making the end portion 16b hollow, the flow passage area at the end portion 16b becomes larger than the flow passage area of the upstream portion. For this reason, gas once stagnates in the end portion 16b. As a result, the gas to be processed is supplied with high uniformity to the portion 16a of the second processing chamber 16 where the processing agent 17 is provided. Therefore, the utilization efficiency of the processing agent 17 in the second processing chamber 16 is increased. Therefore, excellent processing capability can be realized.

  From the viewpoint of realizing more excellent processing capability, L1 / D1 + L2 / D2 is preferably 3 or more, more preferably 4 or more, and even more preferably 5 or more.

However,
L1: The length of the part 15a in which the processing agent 17 is provided in the first processing chamber 15,
D1: Average equivalent diameter of the first processing chamber 15;
L2: The length of the portion 16a of the second processing chamber 16 where the processing agent 17 is provided,
D2: average equivalent diameter of the second processing chamber 16,
It is.

  Other examples of preferred embodiments of the present invention will be described below. In the following description, members having substantially the same functions as those of the first embodiment are referred to by the same reference numerals, and description thereof is omitted.

(Second Embodiment)
FIG. 2 is a schematic cross-sectional view of the gas processing apparatus 1b according to the present embodiment.

  In the gas processing apparatus 1a according to the first embodiment, the first processing chamber is configured such that the gas flowing direction in the first processing chamber 15 is equal to the gas flowing direction in the second processing chamber 16. An example in which one end portion of 15 and one end portion of the second processing chamber 16 are connected by the pipe 18 has been described. However, the present invention is not limited to this configuration.

  For example, as in the gas processing apparatus 1 b, one end of the first processing chamber 15 and one end of the second processing chamber 16 are connected by a pipe 18, and the first processing chamber 15. The direction in which the gas flows in and the direction in which the gas flows in the second processing chamber 16 may be reversed.

(Third embodiment)
FIG. 3 is a schematic cross-sectional view of the gas processing apparatus 1c according to the present embodiment.

  Like the gas processing apparatus 1c, the first processing chamber 15 and the second processing chamber 16 may be arranged linearly. In that case, for example, the length of the first processing chamber 15 may be different from the length of the second processing chamber 16. For example, the first processing chamber 15 may be made relatively short and the second processing chamber 16 may be made relatively long.

(Fourth embodiment)
FIG. 4 is a schematic cross-sectional view of a gas processing apparatus 1d according to the present embodiment. As shown in FIG. 4, the gas processing apparatus 1 d includes a gas processing cartridge 2. The processing cartridge 2 has a housing 23 having an internal space. The cross section of the internal space of the housing 23 is rectangular.

  A partition plate 24 is provided in the housing 23. The internal space of the housing 23 is partitioned into a first processing chamber 15 and a second processing chamber 16 by the partition plate 24. The partition plate 24 is not provided in the lower part of the housing 23. For this reason, the first processing chamber 15 and the second processing chamber 16 are directly connected at the lower portion of the housing 23. Also in the processing apparatus 1d, the end 16b on the first processing chamber 15 side of the second processing chamber 16 is hollow. For this reason, the gas to be processed is supplied to the portion 16a with high uniformity. Therefore, excellent processing capability can be realized.

(Fifth embodiment)
FIG. 5 is a schematic cross-sectional view of a gas processing apparatus 1e according to the fifth embodiment. FIG. 6 is a schematic view of a gas processing apparatus according to the fifth embodiment.
In the processing apparatus 1 d according to the fourth embodiment, the downstream side end of the first processing chamber 15 is filled with the processing agent 17. However, the present invention is not limited to this configuration. For example, like the processing apparatus 1e, the downstream side end of the first processing chamber 15 may not be filled with the processing agent 17.
[Example 1]
A processing apparatus having a configuration substantially similar to that of the gas processing apparatus 1e according to the fifth embodiment was manufactured under the conditions shown in Table 1. Chlorine gas diluted with nitrogen gas was supplied to the treatment apparatus, and the breakthrough adsorption rate was measured. The results are shown in Table 1.

The flow rate of chlorine gas was 0.3 L / min. The flow rate of nitrogen gas was 65 L / min.
[Comparative Example 1]
As shown in FIGS. 7 and 8, the gas processing having substantially the same configuration as the gas processing apparatus 1 e except that the partition plate 24 is not provided and an integral processing chamber is provided inside the housing. Device 100 was made. Similarly to Example 1, chlorine gas diluted with nitrogen gas was supplied to the processing apparatus 100, and the breakthrough adsorption rate of the gas detector was measured. The results are shown in Table 1.

In Table 1,
Capacity: capacity of the internal space of the housing,
Cross-sectional shape: cross-sectional shape of the internal space of the housing,
Cross-sectional area: cross-sectional area of each processing chamber,
Processing chamber dimension (L): the total length of the processing chamber along the gas flow direction,
D: Average equivalent diameter of the processing chamber,
Chlorine concentration: Chlorine concentration in the supplied gas (treated gas)
It is.

1, 1a, 1b, 1c, 1d, 1e: processing device 2: processing cartridge 11: introduction port 12: discharge port 13: first housing 14: second housing 15: first processing chamber 16: first 2 processing chamber 16a: part 16b: side end 16b: end 17: processing agent 18: piping 23: housing 24: partition plate

Claims (6)

A first treatment chamber into which a gas to be treated is introduced;
A second processing chamber in which gas is introduced from the first processing chamber and processed gas is discharged;
A treatment agent disposed in each of the first and second treatment chambers for treating the gas;
With
A gas processing apparatus, wherein the first processing chamber side end of a second processing chamber is hollow. In the gas flow direction, the length of the portion of the first processing chamber where the processing agent is provided is L1, the average equivalent diameter of the first processing chamber is D1, and the gas flow direction When the length of the portion where the processing agent is provided in the second processing chamber is L2, and the average equivalent diameter of the second processing chamber is D2,
L1 / D1 + L2 / D2 ≧ 3
The gas processing apparatus according to claim 1, wherein A first housing having the first processing chamber;
A second housing having the second processing chamber;
Piping connecting the first processing chamber and the second processing chamber;
The gas processing apparatus according to claim 1, comprising: A housing having an internal space;
A partition plate that partitions the internal space into the second processing chamber of the first processing chamber;
The gas processing apparatus according to claim 1, comprising: A first treatment chamber into which a gas to be treated is introduced;
A second processing chamber in which gas is introduced from the first processing chamber and processed gas is discharged;
A treatment agent disposed in each of the first and second treatment chambers for treating the gas;
With
A gas processing cartridge, wherein the first processing chamber side end of the second processing chamber is hollow. The gas processing method of processing gas using the gas processing apparatus as described in any one of Claims 1-4.

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