JP2014067977A - Pressure-contact type semiconductor device and method of manufacturing pressure-contact type semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a pressure-contact type semiconductor device that prevents trouble due to component shifting by suppressing a gap from being formed in the pressure-contact type semiconductor device, and a method of manufacturing the pressure-contact type semiconductor device.SOLUTION: A pressure-contact type semiconductor device includes: a semiconductor substrate 10 which has an upper surface 10a and a lower surface 10b on the opposite side from the upper surface and in which a current flows between the upper surface and lower surface; a main body part 16A which is electrically connected to the upper surface while facing the upper surface; a first electrode 16 which has a plurality of projection parts 16a, 16b formed extending radially from the main body part toward side faces of the main body part; a second electrode 44 which is electrically connected to the lower surface while facing the lower surface; an insulation cylinder 70 which covers the projection parts and semiconductor substrate while exposing an upper surface of the main body part and a lower surface of the second electrode to the outside; and projection parts 70a, 70b for fixation which are provided on an inner wall of the insulation cylinder 70, and come into contact with the projection parts to suppress the first electrode from moving away from the semiconductor substrate.

Description

  The present invention relates to, for example, an industrial inverter used for driving an iron rolling mill, a high-voltage and large-capacity switch, a press-contact type semiconductor device used for a rectifier, and a method for manufacturing the press-contact type semiconductor device.

  Patent Document 1 discloses a pressure contact type semiconductor device in which electrodes are fixed on both sides of a semiconductor substrate. This semiconductor substrate is covered with an insulating cylinder (insulating container). A gap between the insulating cylinder and the electrode is filled with a filler combined material made of a rubber-like elastic material, and the semiconductor substrate is hermetically sealed.

JP-A-62-128537

  During the manufacture of a pressure contact type semiconductor device, the internal pressure of the device may decrease due to vacuum evacuation, the internal pressure of the device may increase due to thermal aging, or gas may be generated inside the device during baking, so that the electrode may expand. When the electrode moves in a direction away from the semiconductor substrate due to the expansion, there is a problem that a gap is generated inside the pressure contact type semiconductor device and components of the pressure contact type semiconductor device are displaced.

  The present invention has been made in order to solve the above-described problems. A pressure-contact type semiconductor device and a pressure-contact type semiconductor device that prevent problems caused by component displacement by suppressing generation of a gap in the pressure-contact type semiconductor device. An object is to provide a manufacturing method.

  A pressure-contact type semiconductor device according to the invention of the present application has a top surface and a bottom surface opposite to the top surface, a semiconductor substrate through which a current flows between the top surface and the bottom surface, and the top surface while facing the top surface. A first electrode having an electrically connected main body, and a plurality of protrusions formed so as to extend radially from the main body toward a side surface of the main body; and Second electrodes connected to each other, an insulating cylinder that covers the protrusion and the semiconductor substrate, with the upper surface of the main body and the lower surface of the second electrode exposed to the outside, and an inner wall of the insulating cylinder And a fixing protrusion that suppresses the first electrode from moving in a direction away from the semiconductor substrate in contact with the protrusion.

  The method of manufacturing a press-contact type semiconductor device according to the invention of the present application includes a step of housing a semiconductor substrate in an insulating cylinder having an inner wall provided with a fixing protrusion, and a lower surface of a first electrode having a protrusion on a side surface. Electrically connecting the first electrode and the upper surface of the semiconductor substrate such that the fixing protrusion and the protrusion are not in contact with each other while facing the upper surface of the substrate; and A step of bringing the fixing protrusion into contact with the upper surface of the protrusion, and a thin metal plate fixed to a part of the insulating cylinder into a thin metal plate fixed to a part of the first electrode. And a step of fixing to each other in this order.

  According to the present invention, the protrusion formed on the electrode and the fixing protrusion provided on the insulating cylinder are brought into contact with each other, so that the electrode is prevented from moving away from the semiconductor substrate. Can be suppressed.

It is sectional drawing of the press-contact type semiconductor device which concerns on Embodiment 1 of this invention. It is a top view of an insulation cylinder. It is a top view of the 1st electrode. It is sectional drawing which shows having accommodated the semiconductor substrate etc. in the insulation cylinder. It is sectional drawing which shows connecting the 1st electrode and the upper surface of a semiconductor substrate electrically. It is a top view which shows the positional relationship of a projection part and a projection part for fixation when a 1st electrode is brought close to a semiconductor substrate. It is sectional drawing which shows having put the 1st electrode on the insertion board. It is sectional drawing of the press-contact type semiconductor device of a comparative example. It is a top view which shows the modification of the protrusion part for fixation. It is a perspective view which shows that the slope of a projection part and the slope of a projection part for fixation contact. It is sectional drawing of the press-contact type semiconductor device which concerns on Embodiment 2 of this invention. It is a top view of a 1st ring. It is sectional drawing of the press-contact type semiconductor device which concerns on Embodiment 3 of this invention. It is sectional drawing of the press-contact type semiconductor device which concerns on Embodiment 4 of this invention.

  A pressure-contact type semiconductor device and a method of manufacturing the pressure-contact type semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. The same or corresponding components are denoted by the same reference numerals, and repeated description may be omitted.

Embodiment 1 FIG.
FIG. 1 is a cross-sectional view of a pressure-contact type semiconductor device according to Embodiment 1 of the present invention. The pressure contact type semiconductor device includes a semiconductor substrate 10 made of, for example, Si. The semiconductor substrate 10 has an upper surface 10a and a lower surface 10b that is a surface opposite to the upper surface 10a. Specifically, the semiconductor substrate 10 is formed of a diode having the upper surface 10a as a cathode and the lower surface 10b as an anode. Therefore, a current flows between the upper surface 10a and the lower surface 10b of the semiconductor substrate 10. An end face protective resin 11 is formed on the side surface of the semiconductor substrate 10.

  A buffer plate 12 is fixed to the upper surface 10 a of the semiconductor substrate 10. The buffer plate 12 is made of Mo, for example. An insertion plate 14 is fixed to the upper surface of the buffer plate 12. The insertion plate 14 is made of, for example, silver. A first electrode 16 is fixed on the upper surface of the insertion plate 14. The first electrode 16 is made of, for example, copper. The buffer plate 12 is formed as a thermal buffer material for preventing distortion due to the difference in coefficient of thermal expansion between the semiconductor substrate 10 and the first electrode 16.

  The first electrode 16 has a main body 16A, a first protrusion 16a, and a second protrusion 16b. The main body portion 16 </ b> A is electrically connected to the upper surface 10 a while facing the upper surface 10 a of the semiconductor substrate 10. The first projecting portion 16a and the second projecting portion 16b (hereinafter, the first projecting portion 16a and the second projecting portion 16b may be collectively referred to as a projecting portion) radially from the main body portion 16A to the side surface of the main body portion 16A. Is growing.

  A thin metal plate 17 is fixed to the first electrode 16. The thin metal plate 17 extends from the main body portion 16A in the side surface direction of the main body portion 16A. A concave portion 16 c that opens in the direction of the semiconductor substrate 10 is formed in the main body portion 16 </ b> A. A spring 18 is accommodated in the recess 16c. One end of the spring 18 contacts the bottom surface of the recess 16 c and the other end contacts the center pin 20. The center pin 20 penetrates the insertion plate 14 and pierces the recess of the buffer plate 12. The center pin 20 receives the elastic force of the spring 18 and presses the insertion plate 14 toward the buffer plate 12. The center pin 20 also functions as a positioning member for the first electrode 16 of the buffer plate 12.

  A buffer plate 40 is fixed to the lower surface 10 b of the semiconductor substrate 10. An insertion plate 42 is fixed to the lower surface of the buffer plate 40. A second electrode 44 is fixed to the lower surface of the insertion plate 42. The second electrode 44 is electrically connected to the lower surface 10b while facing the lower surface 10b. A pin 50 penetrating the insertion plate 42 is fitted into the recess formed on the surface of the second electrode 44 facing the buffer plate 40 and the recess formed on the surface of the buffer plate 40 facing the second electrode 44. Yes. The relative position between the second electrode 44 and the buffer plate 40 is determined by the pin 50. Similar to the first electrode 16, a metal thin plate 60 extending in the side surface direction of the second electrode 44 is fixed to the second electrode 44.

  The above configuration is accommodated in the insulating cylinder 70. The insulating cylinder 70 covers the protrusion, the semiconductor substrate 10 and the like while exposing the upper surface of the main body 16A and the lower surface of the second electrode 44 to the outside. The insulating cylinder 70 is made of, for example, ceramic. On the inner wall of the insulating cylinder 70, a first fixing projection 70a and a second fixing projection 70b are provided. The first fixing protrusion 70 a and the second fixing protrusion 70 b are formed integrally with the insulating cylinder 70 from the same material as the insulating cylinder 70.

  The first fixing projection 70a is in contact with the first projection 16a. Specifically, the lower surface of the first fixing projection 70a is in contact with the upper surface of the first projection 16a. The second fixing projection 70b is in contact with the second projection 16b. Specifically, the lower surface of the second fixing projection 70b is in contact with the upper surface of the second projection 16b. The first fixing protrusion 70a and the second fixing protrusion 70b may be collectively referred to as a fixing protrusion.

  FIG. 2 is a plan view of the insulating cylinder. The insulating cylinder 70 is formed in an annular shape as a whole. The inner diameter of the portion where the first fixing projection 70a and the second fixing projection 70b are formed is d1. The inner diameter of the portion 70e where the fixing protrusion is not formed is d2.

  FIG. 3 is a plan view of the first electrode. The first electrode 16 has a cylindrical shape as a whole. The diameter of the portion where the first protrusion 16a and the second protrusion 16b are formed is d3. d3 is larger than d1 and smaller than d2. The diameter of the main body portion 16A, which is a portion where no protrusion is formed, is d4. d4 is smaller than d1 described above.

  Here, a manufacturing method of the pressure contact type semiconductor device according to the first embodiment of the present invention will be described. First, the semiconductor substrate 10 and the like are accommodated in the insulating cylinder 70 having the fixing protrusions fixed to the inner wall. FIG. 4 is a cross-sectional view showing that a semiconductor substrate or the like is accommodated in an insulating cylinder. In this step, components other than the first electrode 16 are accommodated in the insulating cylinder 70. Next, the first electrode 16 and the upper surface of the semiconductor substrate 10 are electrically connected while the lower surface of the first electrode 16 is opposed to the upper surface of the semiconductor substrate 10. FIG. 5 is a cross-sectional view showing that the first electrode and the upper surface of the semiconductor substrate are electrically connected. As shown in FIG. 5, the first electrode 16 is lowered from above the semiconductor substrate 10. At this time, care should be taken so that the protrusion and the fixing protrusion do not contact each other.

  FIG. 6 is a plan view showing the positional relationship between the protrusion and the fixing protrusion when the first electrode is brought close to the semiconductor substrate. As shown in FIG. 6, the first protrusion 16a and the second protrusion 16b are opposed to the portion 70e where the fixing protrusion is not formed, and the side surface of the main body 16A is the first fixing protrusion 70a. The first electrode 16 is moved so as to face the second fixing projection 70b. Thus, the first electrode 16 is placed on the insertion plate 14.

  FIG. 7 is a cross-sectional view showing that the first electrode is placed on the insertion plate. In this state, the protrusion and the fixing protrusion are not in contact. Next, the first electrode 16 is rotated with respect to the insulating cylinder 70 so that the fixing protrusion is brought into contact with the upper surface of the protrusion. The first electrode 16 is rotated in the direction indicated by the arrow in FIG.

  Next, the metal thin plate 70 c fixed to a part of the insulating cylinder 70 is fixed to the metal thin plate 17 fixed to a part of the first electrode 16. The metal thin plate 70c and the metal thin plate 17 are fixed by welding. Similarly, the metal thin plate 70d and the metal thin plate 60 are fixed by welding. Thus, the press contact type semiconductor device shown in FIG. 1 is completed.

  Here, a comparative example will be described in order to facilitate understanding of the pressure contact type semiconductor device according to the first embodiment of the present invention. FIG. 8 is a cross-sectional view of a pressure contact type semiconductor device of a comparative example. The pressure contact type semiconductor device of the comparative example is different from the pressure contact type semiconductor device according to the first embodiment of the present invention in that it does not include a fixing protrusion and a protrusion. The first electrode 16 of the comparative example is pressed against the semiconductor substrate 10 only by welding and fixing the thin metal plate 17 and the thin metal plate 70c. Therefore, when the insertion plate 14 adheres to the first electrode 16 by repeating the press contact, the center pin 20 does not function and a gap may be generated inside the press contact type semiconductor device. When the first electrode 16 is thermally expanded in such a situation, the buffer plate 12 may be displaced as shown in FIG.

  According to the pressure-contact type semiconductor device according to the first embodiment of the present invention, the fixing protrusion is in contact with the protrusion, and the first electrode 16 is prevented from moving away from the semiconductor substrate 10. That is, when the first electrode 16 is thermally expanded, the first protrusion 16a hits the first fixing protrusion 70a and the second protrusion 16b hits the first fixing protrusion 70b, so that the first electrode 16 becomes a semiconductor substrate. It is possible to suppress movement in a direction away from 10. Therefore, it is possible to avoid the generation of a gap inside the pressure contact type semiconductor device.

  According to the manufacturing method of the pressure-contact type semiconductor device according to the first embodiment of the present invention, since the protrusion is formed so as to extend radially from the main body portion 16A of the first electrode 16 to the side surface direction of the main body portion 16A, A portion having a short diameter and a long portion of the electrode 16 can be formed. Accordingly, when the bottom surface of the first electrode 16 is brought into contact with the insertion plate 14, the protrusion and the fixing protrusion are shifted in plan view, thereby preventing the protrusion and the fixing protrusion from contacting each other. Then, by rotating the first electrode 16 after that, the protrusion and the fixing protrusion can be brought into contact with each other. Therefore, the press contact type semiconductor device according to the first embodiment of the present invention can be manufactured by a very simple process.

  The semiconductor substrate 10 is not limited to a diode, and any semiconductor substrate 10 may be used as long as it has at least one PN junction and is assembled in pressure contact with an electrode. For example, the semiconductor substrate 10 may be formed of a thyristor.

  In Embodiment 1 of the present invention, two fixing protrusions and two protrusions are formed, but there is no particular limitation as long as a plurality of fixing protrusions and protrusions are formed. FIG. 9 is a plan view showing a modification of the fixing protrusion. As shown in FIG. 9, a first fixing protrusion 70f, a second fixing protrusion 70g, and a third fixing protrusion 70h may be formed. In this case, three protrusions are also formed corresponding to the configuration of FIG.

  By the way, it is preferable that a plurality of fixing protrusions be formed at equal intervals. That is, when the fixing protrusions are arranged so as to be line symmetric when viewed in plan, the force received from the protrusions can be evenly distributed to each of the fixing protrusions, and the internal gap can be more reliably suppressed.

  In order to facilitate the manufacture of the pressure-contact type semiconductor device according to the first embodiment of the present invention, slopes may be formed on the protrusions and the fixing protrusions so that the slopes come into contact with each other. FIG. 10 is a perspective view showing that the slope of the projection and the slope of the fixing projection are in contact with each other. The first fixing projection 70a ′ and the first projection 16a ′ are respectively formed with slopes. The arrows in FIG. 10 indicate the rotation direction of the first electrode. When the first electrode (the first protrusion 16a ′) is rotated, the slopes of the first fixing protrusion 70a ′ and the first protrusion 16a ′ come into contact with each other, and the inner electrode inner wall of the first electrode moves in the circumferential direction. Stops. Accordingly, the rotation can be stopped in a state where the first fixing projection 70a ′ and the first projection 16a ′ are in contact with each other, so that the assemblability can be improved. Each of the above-described modifications can also be applied to the pressure-contact type semiconductor device according to the following embodiment.

Embodiment 2. FIG.
Since the pressure-contact type semiconductor device and the method of manufacturing the pressure-contact type semiconductor device according to the second embodiment of the present invention have much in common with the first embodiment, the difference from the first embodiment will be mainly described. The press-contact type semiconductor device according to the second embodiment of the present invention is characterized by including a ring fixed to an insulating cylinder. FIG. 11 is a cross-sectional view of the pressure-contact type semiconductor device according to the second embodiment of the present invention.

  A groove portion 70 s is formed on the inner wall of the insulating cylinder 70. The first ring 100 is fitted in the groove 70s. The first ring 100 is fixed to the insulating cylinder 70 so as to surround the first electrode 16. A part of the first ring 100 is formed with a first fixing protrusion 100a and a second fixing protrusion 100b.

  FIG. 12 is a plan view of the first ring. Notches 100d and 100e are formed in a part of the first ring 100. The inner diameter of the portion where the first fixing protrusion 100a and the second fixing protrusion 100b are formed is d1. The inner diameter of the portion 100e where the fixing protrusion is not formed is d2. The inner diameter of the portion where the notches 100d and 100e are formed is d5.

  A manufacturing method of the pressure contact type semiconductor device according to the second embodiment of the present invention will be described. First, the first ring 100 is fitted into the groove portion 70 s of the insulating cylinder 70. At this time, the first ring 100 can be easily fitted into the groove 70s by deforming the portions where the notches 100c and 100d are formed.

  Next, the first electrode 16 is placed on the upper surface of the insertion plate 14, and the first electrode 16 and the upper surface 10 a of the semiconductor substrate 10 are electrically connected. Next, the first electrode 16 is rotated with respect to the insulating cylinder 70 so that the fixing protrusions (the first fixing protrusion 100a and the second fixing protrusion 100b) are brought into contact with the upper surface of the protrusion. Next, the metal thin plate 17 and the metal thin plate 70c, and the metal thin plate 60 and the metal thin plate 70d are fixed by welding.

  Since the insulating cylinder 70 is made of ceramic, it is difficult to process. Therefore, there is a problem that it is difficult to form the insulating cylinder 70 and the fixing protrusion integrally as in the first embodiment. However, in the pressure-contact type semiconductor device according to the second embodiment of the present invention, the fixing protrusion can be easily formed simply by fitting the first ring 100 into the groove 70s of the insulating cylinder 70. Therefore, according to the press contact type semiconductor device according to the second embodiment of the present invention, the manufacturing cost can be reduced.

Embodiment 3 FIG.
Since the pressure-contact type semiconductor device and the method of manufacturing the pressure-contact type semiconductor device according to the third embodiment of the present invention have much in common with the first embodiment, the differences from the first embodiment will be mainly described. The pressure-contact type semiconductor device according to the third embodiment of the present invention is characterized in that the second electrode is fixed by a part of the insulating cylinder. FIG. 13 is a cross-sectional view of a pressure-contact type semiconductor device according to Embodiment 3 of the present invention.

  A first additional fixing projection 70m and a second additional fixing projection 70n extending in the direction of the second electrode 44 are provided on the inner wall of the insulating cylinder 70. The first additional fixing protrusion 70m and the second additional fixing protrusion 70n may be collectively referred to as an additional fixing protrusion. The second electrode 44 includes a first additional protrusion 44a and a second additional protrusion 44b extending in the side surface direction. The first additional protrusion 44a and the second additional protrusion 44b may be collectively referred to as an additional protrusion. In the third embodiment of the present invention, the additional fixing protrusions are in contact with the additional protrusions, and the second electrode 44 is prevented from moving away from the lower surface 10b of the semiconductor substrate 10.

  When the fixing strength between the metal thin plate 60 and the metal thin plate 70d is weak, the second electrode 44 may be thermally expanded and the second electrode 44 may move in the opposite direction to the lower surface 10b of the semiconductor substrate 10. However, in the press-contact type semiconductor device according to the third embodiment of the present invention, the second electrode 44 moves in a direction away from the lower surface 10b of the semiconductor substrate 10 when the additional fixing protrusion comes into contact with the fixing protrusion. Can be suppressed.

Embodiment 4 FIG.
Since the pressure-contact type semiconductor device and the method of manufacturing the pressure-contact type semiconductor device according to the fourth embodiment of the present invention have much in common with the first embodiment, the differences from the first embodiment will be mainly described. The pressure-contact type semiconductor device according to the fourth embodiment of the present invention is characterized in that the second electrode is fixed by a ring fixed to the insulating cylinder. FIG. 14 is a cross-sectional view of the pressure-contact type semiconductor device according to the fourth embodiment of the present invention.

  A groove portion 70 t is formed on the inner wall of the insulating cylinder 70. The second ring 102 is fitted in the groove 70t. The second ring 102 is fixed to the insulating cylinder 70 so as to surround the second electrode 44. The second ring 102 has the same shape as the first ring 100. That is, the second ring 102 is formed with additional fixing protrusions (first additional fixing protrusions 102a and second additional fixing protrusions 102b) corresponding to the fixing protrusions of the first ring. The second electrode 44 includes additional protrusions (first additional protrusion 44 a and second additional protrusion 44 b) extending in the side surface direction of the second electrode 44.

  The additional fixing protrusions of the second ring 102 are in contact with the additional protrusions of the second electrode 44, and the second electrode 44 is prevented from moving away from the lower surface 10 b of the semiconductor substrate 10. In the pressure-contact type semiconductor device according to the fourth embodiment of the present invention, since the second ring 102 is used, the manufacturing cost can be reduced as compared with the pressure-contact type semiconductor device according to the third embodiment.

  By the way, any one of the fixing protrusion and the additional fixing protrusion may be employed. That is, in consideration of the structure of the pressure-contact type semiconductor device, if the first electrode 16 is easy to move (expand) in the direction opposite to the upper surface 10a of the semiconductor substrate 10, the fixing protrusion and the protrusion are provided. If the second electrode 44 is easy to move (expand) in the direction opposite to the lower surface 10b of the semiconductor substrate 10, an additional fixing protrusion and an additional protrusion are provided. If both the first electrode 16 and the second electrode 44 are likely to move (expand) in a direction away from the semiconductor substrate 10, a fixing protrusion, an additional fixing protrusion, a protrusion, and an additional protrusion are provided. Therefore, there may be a case where the additional fixing protrusion and the additional protrusion are provided without the fixing protrusion and the protrusion.

  DESCRIPTION OF SYMBOLS 10 Semiconductor substrate, 10a upper surface, 10b lower surface, 11 End surface protection resin, 12,40 Buffer plate, 14,42 Insertion plate, 16 1st electrode, 16A main-body part, 16a 1st projection part, 16b 2nd projection part, 16c Recessed part 17, 70c, 70d, 60 Metal thin plate, 18 Spring, 20 Center pin, 44 Second electrode, 44a First additional protrusion, 44b Second additional protrusion, 50 pin, 70 Insulating cylinder, 70a, 100a First fixing 70b, 100b second fixing protrusion, 70m, 102a first additional fixing protrusion, 70n, 102b second additional fixing protrusion, 70s, 70t groove, 100 first ring, 102 second ring

Claims (9)

A semiconductor substrate having an upper surface and a lower surface opposite to the upper surface, and a current flows between the upper surface and the lower surface;
A first electrode having a main body portion that is electrically connected to the upper surface while facing the upper surface, and a plurality of protrusions that are radially formed from the main body portion in a lateral direction of the main body portion;
A second electrode electrically connected to the lower surface while facing the lower surface;
An insulating cylinder covering the protrusion and the semiconductor substrate while exposing the upper surface of the main body and the lower surface of the second electrode to the outside;
A pressure contact type provided on the inner wall of the insulating cylinder, and comprising a fixing protrusion that contacts the protrusion and prevents the first electrode from moving in a direction away from the semiconductor substrate. Semiconductor device.   2. The press-contact type semiconductor device according to claim 1, wherein the fixing protrusion is formed integrally with the insulating cylinder using the same material as the insulating cylinder. A first ring that is fixed to the inner wall of the insulating cylinder and surrounds the first electrode;
The press contact type semiconductor device according to claim 1, wherein the fixing protrusion is formed on a part of the first ring.   The pressure contact type semiconductor device according to claim 3, wherein the first ring has a notch.   5. The press-contact type semiconductor device according to claim 1, wherein a plurality of the fixing protrusions are formed at equal intervals. The fixing protrusion and the protrusion are formed to have a slope,
2. The fixing projecting portion and the projecting portion are configured to suppress movement of the fixing projecting portion and the projecting portion in the circumferential direction of the inner wall of the insulating cylinder by contacting the inclined surfaces. 6. The pressure-contact type semiconductor device according to any one of 5 above. Provided on the inner wall of the insulating cylinder, provided with an additional fixing protrusion extending in the direction of the second electrode,
The second electrode includes an additional protrusion extending in the side surface direction of the second electrode,
The said additional fixing projection part contacts the said additional projection part, and it suppresses that a said 2nd electrode moves to the direction away from the lower surface of the said semiconductor substrate, The one of Claims 1 thru | or 6 characterized by the above-mentioned. 2. A pressure-contact type semiconductor device according to 1. A second ring surrounding the second electrode fixed to the inner wall of the insulating cylinder;
The press-contact type semiconductor device according to claim 7, wherein the additional fixing protrusion is formed on a part of the second ring. A step of accommodating the semiconductor substrate in an insulating cylinder provided with a fixing projection on the inner wall;
The first electrode and the upper surface of the semiconductor substrate are electrically connected so that the fixing protrusion and the protrusion do not contact each other while the lower surface of the first electrode having a protrusion on the side surface is opposed to the upper surface of the semiconductor substrate. Connecting, and
Rotating the first electrode with respect to the insulating cylinder to bring the fixing protrusion into contact with the upper surface of the protrusion;
And a step of fixing the metal thin plate fixed to a part of the insulating cylinder to the metal thin plate fixed to a part of the first electrode in this order. Method.

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