JP2014058038A - Wafer edge processing apparatus and edge processing method thereof - Google Patents

Wafer edge processing apparatus and edge processing method thereof Download PDF

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JP2014058038A
JP2014058038A JP2013223477A JP2013223477A JP2014058038A JP 2014058038 A JP2014058038 A JP 2014058038A JP 2013223477 A JP2013223477 A JP 2013223477A JP 2013223477 A JP2013223477 A JP 2013223477A JP 2014058038 A JP2014058038 A JP 2014058038A
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wafer
polishing
contact
polishing tape
edge processing
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JP5700264B2 (en
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Shinichi Kishishita
真一 岸下
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Tokyo Seimitsu Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a wafer edge processing apparatus carrying out high-accuracy edge shape processing of a wafer by using a polishing tape, and its edge processing method.SOLUTION: A wafer edge processing apparatus includes four carrying rollers 71, 72, 73 and 74, two guide rollers 75 and 76 and a cylinder 77 arranged within a nearly quadrilateral figure with the four carrying rollers 71, 72, 73 and 74 as apices and having a movable roller 78, in a polishing head 52. A polishing tape 51 is gripped with a combination of the guide roller 75 and the carrying roller 72 and a combination of the guide roller 76 and the carrying roller 73, respectively, in a movable way. The cylinder 77 causes the polishing tape 51 to protrude toward an edge part of a wafer, and the polishing tape 51 is brought into contact with the edge part of the wafer in nearly point contact.

Description

本発明は半導体素子の素材となるシリコン等のウエハのエッジを加工するウエハエッジ加工装置に係り、特にウエハのエッジの面取り加工を行うウエハエッジ加工装置に関する。   The present invention relates to a wafer edge processing apparatus that processes the edge of a wafer such as silicon, which is a material of a semiconductor element, and more particularly to a wafer edge processing apparatus that performs chamfering processing of a wafer edge.

半導体素子の素材となるシリコン等のインゴットは、スライシングマシンにより薄板状のウエハに切断される。切断されたウエハは、ウエハ外周がエッジ状(ウエハの外周と端面が略直角な状態)になっているため、ウエハ外周部分への僅かな衝撃によりチッピング(微小な欠け)や割れが発生しやすくなる。このことから、スライシングマシンにより切断されたウエハ端面をラッピング装置でラッピングする前に、面取り砥石等を用いてウエハエッジの面取りを行う。   An ingot such as silicon, which is a material of a semiconductor element, is cut into a thin wafer by a slicing machine. The wafer that has been cut has an edge shape on the outer periphery of the wafer (the outer periphery and the end surface of the wafer are substantially perpendicular to each other), so chipping (small chipping) and cracking are likely to occur due to slight impact on the outer periphery of the wafer. Become. Therefore, the wafer edge is chamfered using a chamfering grindstone or the like before lapping the wafer end surface cut by the slicing machine with the lapping apparatus.

また、従来のウエハエッジ加工装置では、面取り砥石の代わりに、例えば研磨テープを繰り出してウエハエッジの面取りを行うもの(特許文献1、2)がある。   Moreover, in the conventional wafer edge processing apparatus, there exist some which chamfer a wafer edge by paying out, for example, a polishing tape instead of a chamfering grindstone (Patent Documents 1 and 2).

特開2009−18363号公報JP 2009-18363 A 特開2006−303112号公報JP 2006-303112 A

しかしながら、図9に示すように、従来の研磨テープ100を用いたウエハエッジ加工装置の研磨ユニット101においては、エッジ部に研磨テープ100を押し当てて、その研磨テープ100を繰り出しながらプレート102にてバックアップして、単に研磨テープ100の押し当て角度とワーク(ウエハ)103の出し入れでウエハエッジ形状を加工するために、精密なウエハエッジの加工制御が困難である。つまり、この種のウエハエッジ加工装置101では、加工するウエハ103と研磨テープ100との接触が略線接触のみとなり、精密なエッジのR形状(面取り)が作れない、また研磨テープ100に「しわ」及び「より」が発生するといった問題があり、精密な加工ができないといった問題がある。   However, as shown in FIG. 9, in the polishing unit 101 of the wafer edge processing apparatus using the conventional polishing tape 100, the polishing tape 100 is pressed against the edge portion, and the polishing tape 100 is fed out and backed up by the plate 102. Thus, since the wafer edge shape is simply processed by the pressing angle of the polishing tape 100 and the work (wafer) 103 being put in and out, it is difficult to precisely control the processing of the wafer edge. That is, in this kind of wafer edge processing apparatus 101, the contact between the wafer 103 to be processed and the polishing tape 100 is only a substantially line contact, and a precise edge R shape (chamfering) cannot be formed. In addition, there is a problem that “more” occurs, and there is a problem that precise machining cannot be performed.

また、砥石を利用したコンタリング加工では、固定砥粒の砥石を使用するためにライフ(砥石寿命)による直径変動等で砥石の形状が変化する、また同じく、固定砥粒のために砥石の切れ味がおちて、粗さの品質が変化してしまう。すなわち、砥石を用いたウエハエッジ加工装置は、使用すると砥粒が落ち使用回数により加工面粗さが変化してしまう、同じく使用回数により砥流が着脱し形状が変化してしまう、また砥石はライフ(砥石寿命)を延長させるために、ツルーイングやドレッシングをおこなうが、これらを行うと砥石の径が変化し、マシンの位置調整が必要になるといった課題がある。   Also, in the contouring process using a grindstone, the shape of the grindstone changes due to diameter fluctuations due to life (grinding wheel life) because a fixed grindstone is used. As a result, the quality of roughness changes. In other words, when using a wafer edge processing apparatus using a grindstone, the abrasive grains fall and the machined surface roughness changes depending on the number of uses. Similarly, the grindstone attaches and detaches and the shape changes depending on the number of uses. Truing and dressing are performed in order to extend the (grinding wheel life). However, when these are performed, there is a problem that the diameter of the grinding wheel changes and the position of the machine needs to be adjusted.

本発明は、このような事情に鑑みてなされたもので、研磨テープを使用したウエハエッジ加工において、高精度なエッジ形状加工を行うことのできるウエハエッジ加工装置及びそのエッジ加工方法を提供することを目的とする。   The present invention has been made in view of such circumstances, and an object of the present invention is to provide a wafer edge processing apparatus and an edge processing method thereof capable of performing highly accurate edge shape processing in wafer edge processing using a polishing tape. And

前記目的を達成するために、本発明の第1態様に係るウエハエッジ加工装置は、ウエハを載置して回転可能な載置台と、研磨テープを接触させることによってウエハの端部を研磨する研磨部と、研磨部を載置台に対して相対的に移動させる移動手段と、を備えるウエハエッジ加工装置であって、研磨部は、ウエハの端部に研磨テープを略点接触にて当接させる点接触当接手段を備える。   In order to achieve the above object, a wafer edge processing apparatus according to the first aspect of the present invention includes a polishing table that polishes an end portion of a wafer by bringing a mounting table on which the wafer is mounted and a polishing tape into contact with each other. And a moving means for moving the polishing unit relative to the mounting table, wherein the polishing unit is a point contact that causes the polishing tape to abut on the end of the wafer by a substantially point contact. A contact means is provided.

本態様によれば、研磨テープを接触させることによってウエハの端部を研磨する研磨部は、ウエハの端部に研磨テープを略点接触にて当接させる点接触当接手段を備える。これにより、研磨テープを使用したウエハエッジ加工において、高精度なエッジ形状加工を行うことができる。   According to this aspect, the polishing unit that polishes the end portion of the wafer by bringing the polishing tape into contact includes the point contact abutting means for bringing the polishing tape into contact with the end portion of the wafer by substantially point contact. Thereby, in wafer edge processing using a polishing tape, highly accurate edge shape processing can be performed.

本発明の第2態様に係るウエハエッジ加工装置は、第1態様において、研磨部は、ウエハの端部に研磨テープを略線接触にて当接させる線接触当接手段を更に備える。   In the wafer edge processing apparatus according to the second aspect of the present invention, in the first aspect, the polishing unit further includes a line contact abutting means that abuts the polishing tape on the end of the wafer in a substantially line contact.

本発明の第3態様に係るウエハエッジ加工装置は、第1態様又は第2態様において、研磨部は、載置台の回転軸を含む平面内において、ウエハの端部に沿って研磨テープが接触する位置を変更させる接触位置変更手段を備える。   The wafer edge processing apparatus according to a third aspect of the present invention is the wafer edge processing apparatus according to the first aspect or the second aspect, wherein the polishing unit is in contact with the polishing tape along the edge of the wafer in a plane including the rotation axis of the mounting table. Contact position changing means for changing

本発明の第4態様に係るウエハエッジ加工装置は、第3態様において、接触位置変更手段は、研磨テープを微小振動させながらウエハの端部に研磨テープを接触させる。   In the wafer edge processing apparatus according to the fourth aspect of the present invention, in the third aspect, the contact position changing means makes the polishing tape contact the edge of the wafer while slightly vibrating the polishing tape.

本発明の第5態様に係るウエハエッジ加工方法は、ウエハを載置して回転可能な載置台と、研磨テープを接触させることによってウエハの端部を研磨する研磨部と、研磨部を載置台に対して相対的に移動させる移動手段と、を備えるウエハエッジ加工装置のウエハ加工方法であって、ウエハの端部に研磨テープを略点接触にて当接させることにより、ウエハの端部を研磨する点接触当接ステップを備える。   A wafer edge processing method according to a fifth aspect of the present invention includes a mounting table that can be rotated by mounting a wafer, a polishing unit that polishes an end portion of the wafer by contacting a polishing tape, and the polishing unit as a mounting table. A wafer processing method of a wafer edge processing apparatus comprising a moving means that moves relative to the wafer, and polishing the edge of the wafer by bringing the polishing tape into contact with the edge of the wafer in a substantially point contact manner. A point contact contact step.

本発明の第6態様に係るウエハエッジ加工方法は、第5態様において、ウエハの端部に研磨テープを略線接触にて当接させることにより、ウエハの端部を研磨する線接触当接ステップを更に備える。   The wafer edge processing method according to a sixth aspect of the present invention includes a line contact contact step of polishing the edge of the wafer by bringing the polishing tape into contact with the edge of the wafer in substantially line contact in the fifth aspect. In addition.

本発明の第7態様に係るウエハエッジ加工方法は、第5態様又は第6態様において、載置台の回転軸を含む平面内において、ウエハの端部に沿って研磨テープが接触する位置を変更させる接触位置変更ステップを更に備える。   The wafer edge processing method according to a seventh aspect of the present invention provides the wafer edge processing method according to the fifth aspect or the sixth aspect, wherein the contact position of the polishing tape is changed along the edge of the wafer in the plane including the rotation axis of the mounting table. A position change step is further provided.

本発明の第8態様に係るウエハエッジ加工方法は、第7態様において、接触位置変更ステップは、研磨テープを微小振動させながらウエハの端部に研磨テープを接触させる。   In the wafer edge processing method according to the eighth aspect of the present invention, in the seventh aspect, in the contact position changing step, the polishing tape is brought into contact with the end portion of the wafer while the polishing tape is slightly vibrated.

本発明によれば、研磨テープを使用したウエハエッジ加工において、高精度なエッジ形状加工を行うことができる。   According to the present invention, it is possible to perform highly accurate edge shape processing in wafer edge processing using a polishing tape.

本発明の実施形態に係る研磨装置の構成を示す図The figure which shows the structure of the grinding | polishing apparatus which concerns on embodiment of this invention. 図1の研磨ヘッド部の要部を示す第1の拡大図A first enlarged view showing a main part of the polishing head part of FIG. 図1の研磨ヘッド部の要部を示す第2の拡大図A second enlarged view showing the main part of the polishing head part of FIG. 3図の可動ローラを示す拡大図3 is an enlarged view showing the movable roller of FIG. 図4のA−A線断面を示す断面図Sectional drawing which shows the AA line cross section of FIG. 図2の状態の研磨ヘッド部による線接触エッジ加工を行う線接触当接工程を説明する図The figure explaining the line contact contact process which performs the line contact edge process by the grinding | polishing head part of the state of FIG. 図3の状態の研磨ヘッド部による点接触エッジ加工を行う点接触当接工程を説明する図The figure explaining the point contact contact process which performs the point contact edge process by the grinding | polishing head part of the state of FIG. 図3の状態の研磨ヘッド部による点接触エッジ加工の変形例を示す図The figure which shows the modification of the point contact edge process by the grinding | polishing head part of the state of FIG. 従来の研磨ユニットを示す図Figure showing a conventional polishing unit

以下、添付図面を参照して、本発明に係るウエハエッジ加工装置及びそのエッジ加工方法について詳細に説明する。   Hereinafter, a wafer edge processing apparatus and an edge processing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.

図1は本発明の実施形態係る研磨装置の構成を示す図である。図1に示すように、本実施形態に係るウエハエッジ加工装置としての研磨装置1は、ウエハ2を保持するためのウエハテーブル部としてのウエハステージ3と、該ウエハステージ3の上面(ウエハ保持面)と平行な方向に移動させるためのウエハステージ移動機構4と、前記ウエハステージ3に保持されたウエハ2のエッジ部を研磨する研磨テープ部としてのエッジ研磨ユニット5と、該エッジ研磨ユニット5を前記ウエハステージ3に保持されたウエハ2のエッジ部に対して移動させる研磨移動機構6と、備えている。   FIG. 1 is a diagram showing a configuration of a polishing apparatus according to an embodiment of the present invention. As shown in FIG. 1, a polishing apparatus 1 as a wafer edge processing apparatus according to this embodiment includes a wafer stage 3 as a wafer table unit for holding a wafer 2 and an upper surface (wafer holding surface) of the wafer stage 3. Wafer stage moving mechanism 4 for moving in a direction parallel to the wafer stage, edge polishing unit 5 as a polishing tape unit for polishing the edge portion of wafer 2 held on wafer stage 3, and edge polishing unit 5 A polishing moving mechanism 6 for moving the edge portion of the wafer 2 held on the wafer stage 3 is provided.

ウエハステージ移動機構4は、円筒部材10を回転自在に支持する軸台11と、軸台11と一体に移動可能な可動部12と、可動部12をウエハステージ3の上面と平行な上面を有する基台13にて移動可能に支持する支持第14と、を備えている。   The wafer stage moving mechanism 4 has a shaft base 11 that rotatably supports the cylindrical member 10, a movable part 12 that can move integrally with the shaft base 11, and an upper surface that is parallel to the upper surface of the wafer stage 3. And a support 14 that is supported by the base 13 so as to be movable.

なお、可動部12は、基台13の上面にてウエハステージ3の上面と平行な矢印Yで示す方向に移動可能となっている。また、軸台11の円筒部材10は、ウエハステージ3の上面と直交するβ軸を回転軸として回転可能に構成される。   The movable portion 12 is movable on the upper surface of the base 13 in the direction indicated by the arrow Y parallel to the upper surface of the wafer stage 3. Further, the cylindrical member 10 of the shaft base 11 is configured to be rotatable about a β axis orthogonal to the upper surface of the wafer stage 3 as a rotation axis.

エッジ研磨ユニット5は、研磨テープ(帯状研磨部材)51をウエハ2のエッジ部に当接させ押圧するエッジ当接部としての研磨ヘッド部52と、研磨テープ51を研磨ヘッド部52に送る研磨テープ送り機構53とを備えている。研磨テープ送り機構53は、研磨テープ51を研磨ヘッド部52に送るテープ送り出し部としての送りボビン54と、研磨ヘッド部52に繰り出された研磨テープ51を巻き取るテープ巻き取り部としての巻き取りボビン55と、巻き取りボビン55を回転させる回転機構(不図示)と、を備えている。なお、研磨テープ51としては、研磨面となるその片面に研磨粒子の砥粒をベースフィルムに塗布した研磨テープを用いることができる。   The edge polishing unit 5 includes a polishing head portion 52 as an edge contact portion that contacts and presses the polishing tape (band-shaped polishing member) 51 against the edge portion of the wafer 2, and a polishing tape that sends the polishing tape 51 to the polishing head portion 52. A feed mechanism 53. The polishing tape feeding mechanism 53 includes a feeding bobbin 54 as a tape feeding unit that feeds the polishing tape 51 to the polishing head unit 52, and a winding bobbin as a tape winding unit that winds up the polishing tape 51 fed to the polishing head unit 52. 55 and a rotation mechanism (not shown) for rotating the take-up bobbin 55. As the polishing tape 51, a polishing tape in which abrasive grains of abrasive particles are applied to a base film on one side serving as a polishing surface can be used.

研磨移動機構6は、研磨ヘッド部52及び研磨テープ送り機構53からなるエッジ研磨ユニット5を保持する円筒部材60を有する軸台61と、軸台61と一体に移動可能な可動部62と、可動部62を支持する軸台63と、軸台63と一体に移動可能な可動部64と、を備えている。   The polishing moving mechanism 6 includes a shaft base 61 having a cylindrical member 60 that holds the edge polishing unit 5 including the polishing head portion 52 and the polishing tape feed mechanism 53, a movable portion 62 that can move integrally with the shaft base 61, and a movable portion. A shaft base 63 that supports the portion 62 and a movable portion 64 that can move integrally with the shaft base 63 are provided.

なお、可動部64は、基台13の上面にてウエハステージ3の上面と平行なY方向と直交する矢印Xで示す方向に移動可能となっている。また、可動部62はXY平面と直交する前記β軸の長手軸方向の矢印Zで示す方向に移動可能となっている。また、研磨ヘッド部52は、前記X方向に長手軸を有するα軸を中心に回動可能となっている。   The movable portion 64 is movable on the upper surface of the base 13 in the direction indicated by the arrow X perpendicular to the Y direction parallel to the upper surface of the wafer stage 3. The movable portion 62 is movable in the direction indicated by the arrow Z in the longitudinal axis direction of the β axis perpendicular to the XY plane. Further, the polishing head portion 52 is rotatable around an α axis having a longitudinal axis in the X direction.

図2は図1の研磨ヘッド部の要部を示す第1の拡大図である。図2に示すように、研磨ヘッド部52は、巻き取りボビン55が研磨テープ51を巻き取ることにより、略四角形の頂点位置に配置された4つの搬送ローラ71,72,73,74を介して送りボビン54から送り出され、搬送ローラ72,73に位置する研磨テープ51がウエハ2のエッジ部に略線接触にて当接するように構成されている。また、搬送ローラ72,73に位置する研磨テープ51は、ガイドローラ75,76にて、ガイドローラ75と搬送ローラ72、及びガイドローラ76と搬送ローラ73によりそれぞれ移動可能に把持されている。これにより研磨テープ51に「しわ」及び「より」等が発生することを防止している。   FIG. 2 is a first enlarged view showing a main part of the polishing head part of FIG. As shown in FIG. 2, the polishing head unit 52 is wound through four conveying rollers 71, 72, 73, and 74 arranged at the apex position of a substantially square when the winding bobbin 55 winds up the polishing tape 51. The polishing tape 51 fed from the feed bobbin 54 and positioned on the transport rollers 72 and 73 is configured to come into contact with the edge portion of the wafer 2 by substantially line contact. The polishing tape 51 positioned on the transport rollers 72 and 73 is held by guide rollers 75 and 76 so as to be movable by the guide roller 75 and the transport roller 72, and the guide roller 76 and the transport roller 73, respectively. This prevents “wrinkles” and “more” from occurring on the polishing tape 51.

なお、線接触当接手段は、ガイドローラ75、搬送ローラ72、ガイドローラ76、搬送ローラ73及び研磨テープ51により構成される。   The line contact contact means includes a guide roller 75, a conveyance roller 72, a guide roller 76, a conveyance roller 73 and a polishing tape 51.

前記研磨ヘッド部52は、4つの搬送ローラ71,72,73,74を頂点とする略四角形の内側に、ガイドローラ75と搬送ローラ72、及びガイドローラ76と搬送ローラ73によりそれぞれ移動可能に把持されている研磨テープ51をウエハ2のエッジ部に向けて突出させ、研磨テープ51をウエハ2のエッジ部に略点接触にて当接させる可動ローラ78を先端に有するシリンダ77が設けられている。   The polishing head unit 52 is held inside a substantially square shape having four conveying rollers 71, 72, 73, 74 as apexes so as to be movable by the guide roller 75 and the conveying roller 72, and the guide roller 76 and the conveying roller 73, respectively. A cylinder 77 having a movable roller 78 at its tip is provided for projecting the polished polishing tape 51 toward the edge portion of the wafer 2 and bringing the polishing tape 51 into contact with the edge portion of the wafer 2 by substantially point contact. .

なお、点接触当接手段は、ガイドローラ75、搬送ローラ72、ガイドローラ76、搬送ローラ73、可動ローラ78、シリンダ77及び研磨テープ51により構成される。   The point contact contact means includes a guide roller 75, a transport roller 72, a guide roller 76, a transport roller 73, a movable roller 78, a cylinder 77, and a polishing tape 51.

図3は図1の研磨ヘッド部の要部を示す第2の拡大図である。図3に示すように、前記研磨ヘッド部52においては、研磨テープ51をウエハ2のエッジ部に略点接触にて当接させる際に、シリンダ77がウエハ2のエッジ部に向けて移動し、先端に設けた可動ローラ78を研磨テープ51の内側面(研磨粒子のない面)から押圧する。この結果、ガイドローラ75と搬送ローラ72、及びガイドローラ76と搬送ローラ73によりそれぞれ移動可能に把持されている研磨テープ51がウエハ2のエッジ部に向けて突出した状態となり、研磨テープ51がウエハ2のエッジ部に略点接触にて当接させられる。   FIG. 3 is a second enlarged view showing the main part of the polishing head part of FIG. As shown in FIG. 3, in the polishing head portion 52, when the polishing tape 51 is brought into contact with the edge portion of the wafer 2 by substantially point contact, the cylinder 77 moves toward the edge portion of the wafer 2, The movable roller 78 provided at the tip is pressed from the inner side surface (surface without abrasive particles) of the polishing tape 51. As a result, the polishing tape 51 that is movably held by the guide roller 75 and the transport roller 72, and the guide roller 76 and the transport roller 73, respectively, protrudes toward the edge portion of the wafer 2, and the polishing tape 51 is moved to the wafer. The two edge portions are brought into contact with each other by substantially point contact.

図4は図3の可動ローラを示す拡大図、図5は図4のA−A線断面を示す断面図である。図4及び図5に示すように、可動ローラ78は、研磨テープ51の繰り出す回動軸80を中心軸とし、軸方向で中央が最大径で、該中央から軸方向で両端に向かって縮径した樽形状をなし、軸方向で最大径となる中央部81がウエハ2のエッジ部に略点接触にて当接するようになっている。   4 is an enlarged view showing the movable roller of FIG. 3, and FIG. 5 is a cross-sectional view showing a cross section taken along line AA of FIG. As shown in FIGS. 4 and 5, the movable roller 78 has a rotation shaft 80 that feeds the polishing tape 51 as a central axis, the central axis is the maximum diameter in the axial direction, and the diameter is reduced from the center toward both ends in the axial direction. The central portion 81 having the largest barrel shape in the axial direction comes into contact with the edge portion of the wafer 2 by substantially point contact.

このように構成された本実施形態の研磨装置1での研磨ヘッド部52によるウエハ2のエッジ部の面取り加工を図6及び図7を用いて説明する。図6は図2の状態の研磨ヘッド部による線接触エッジ加工を行う線接触当接工程を説明する図、図7は図3の状態の研磨ヘッド部による点接触エッジ加工を行う点接触当接工程を説明する図である。   The chamfering processing of the edge portion of the wafer 2 by the polishing head unit 52 in the polishing apparatus 1 of the present embodiment configured as described above will be described with reference to FIGS. 6 is a diagram for explaining a line contact abutting process for performing line contact edge processing by the polishing head portion in the state of FIG. 2, and FIG. 7 is a point contact abutting for performing point contact edge processing by the polishing head portion in the state of FIG. It is a figure explaining a process.

(1)線接触当接工程:
本実施形態の研磨装置1による線接触当接ステップでは、まず、研磨ヘッド部52のシリンダ77を図2に示した状態とする。そして、図6に示すように、研磨ヘッド部52は、搬送ローラ72,73に位置する研磨テープ51をウエハ2のエッジ部にウエハ2の径方向に位置するポジションP0より略線接触にて当接させる。続いて、研磨ヘッド部52をα軸を中心に回動させて搬送ローラ72,73に位置する研磨テープ51をウエハ2のエッジ部にポジションP1、P2より略線接触にて当接させる。これにより研磨ヘッド部52がウエハ2のエッジ部の面取りを粗加工することとなり、面取り加工機能が実現できる。
(1) Line contact contact process:
In the line contact contact step by the polishing apparatus 1 of the present embodiment, first, the cylinder 77 of the polishing head unit 52 is set to the state shown in FIG. Then, as shown in FIG. 6, the polishing head unit 52 applies the polishing tape 51 positioned on the transport rollers 72 and 73 to the edge portion of the wafer 2 in a substantially line contact from the position P 0 positioned in the radial direction of the wafer 2. Make contact. Subsequently, the polishing head unit 52 is rotated about the α axis, and the polishing tape 51 positioned on the transport rollers 72 and 73 is brought into contact with the edge portion of the wafer 2 from the positions P1 and P2 through a substantially line contact. As a result, the polishing head unit 52 roughly chamfers the edge portion of the wafer 2, and a chamfering function can be realized.

(2)点接触当接工程:
本実施形態の研磨装置1による点接触当接ステップでは、まず、研磨ヘッド部52のシリンダ77を図3に示した状態(ガイドローラ75と搬送ローラ72、及びガイドローラ76と搬送ローラ73によりそれぞれ移動可能に把持されている研磨テープ51がウエハ2のエッジ部に向けて突出した状態)とする。そして、図7に示すように、研磨ヘッド部52は、搬送ローラ72,73に位置する研磨テープ51をウエハ2のエッジ部にウエハ2の径方向に位置するポジションP0より略点接触にて当接させる。続いて、研磨ヘッド部52をα軸を中心にポジションP0からポジションP1に回動させて、搬送ローラ72,73に位置する研磨テープ51をウエハ2のエッジ部を連続的に略点接触にて当接させる。同様に、研磨ヘッド部52をα軸を中心にポジションP0からポジションP2に回動させて、搬送ローラ72,73に位置する研磨テープ51をウエハ2のエッジ部を連続的に略点接触にて当接させる。これにより研磨ヘッド部52がウエハ2のエッジ部の面取りを細加工することとなり、面取り研磨機能が実現できる。
(2) Point contact contact process:
In the point contact contact step by the polishing apparatus 1 of this embodiment, first, the cylinder 77 of the polishing head unit 52 is in the state shown in FIG. 3 (the guide roller 75 and the transport roller 72, and the guide roller 76 and the transport roller 73, respectively. The polishing tape 51 held so as to be movable protrudes toward the edge portion of the wafer 2). Then, as shown in FIG. 7, the polishing head unit 52 applies the polishing tape 51 positioned on the transport rollers 72 and 73 to the edge portion of the wafer 2 by a substantially point contact from the position P 0 positioned in the radial direction of the wafer 2. Make contact. Subsequently, the polishing head 52 is rotated from the position P0 to the position P1 about the α axis, and the polishing tape 51 positioned on the transport rollers 72 and 73 is continuously contacted with the edge portion of the wafer 2 substantially at point contact. Make contact. Similarly, the polishing head 52 is rotated from the position P0 to the position P2 about the α axis, and the polishing tape 51 positioned on the transport rollers 72 and 73 is continuously contacted with the edge portion of the wafer 2 substantially at point contact. Make contact. As a result, the polishing head unit 52 finely chamfers the edge portion of the wafer 2, and a chamfering polishing function can be realized.

なお、本実施形態では、研磨装置1は、研磨時にただ研磨テープ51を押し当てるのではなく、位置決め軸(α軸)を高速で微少に動かし振動させて砥粒のながれを一方向だけでなく当てる効果をさせて粗さを向上させている。   In this embodiment, the polishing apparatus 1 does not just press the polishing tape 51 during polishing, but moves the positioning shaft (α-axis) slightly at high speed to vibrate, thereby causing the flow of abrasive grains not only in one direction. Roughness is improved by applying a hitting effect.

以上説明したように、本実施形態の研磨装置1では、以下のような効果をえることができる。   As described above, the polishing apparatus 1 of the present embodiment can obtain the following effects.

(効果1)研磨テープ51を使用したウエハ2のエッジ加工において、高精度なエッジ形状加工を行うことができる。   (Effect 1) In edge processing of the wafer 2 using the polishing tape 51, highly accurate edge shape processing can be performed.

(効果2)研磨テープ51によりウエハ2のエッジ部の面取り加工を行っているので、砥石を用いた場合のような形状変化、粗さ変化が無く、またツルーイングやドレッシングの必要がない。   (Effect 2) Since the edge portion of the wafer 2 is chamfered by the polishing tape 51, there is no change in shape and roughness as in the case of using a grindstone, and there is no need for truing or dressing.

(効果3)面取り研磨機能に使用した研磨テープ51はテープの中心部のみの使用となり、その結果研磨テープ51を巻き戻して研磨テープ51をずらすことでテープに無駄がでない。   (Effect 3) The polishing tape 51 used for the chamfering polishing function is used only at the center of the tape. As a result, the tape is not wasted by rewinding the polishing tape 51 and shifting the polishing tape 51.

(効果4)1つの研磨ヘッド部52にて加工機能と研磨機能を併せ持つことができる。   (Effect 4) One polishing head unit 52 can have both a processing function and a polishing function.

(効果5)可動ローラ78を樽形状にすることで、搬送ローラ72,73に位置する研磨テープ51をウエハ2のエッジ部に略点接触にて当接させることができるので、研磨テープ51のしわ、よりの影響もなくなり高精度な加工ができる。   (Effect 5) Since the movable roller 78 has a barrel shape, the polishing tape 51 positioned on the transport rollers 72 and 73 can be brought into contact with the edge portion of the wafer 2 by substantially point contact. Wrinkles and influences are eliminated and high-precision machining is possible.

なお、本実施形態では、点接触当接工程においても研磨ヘッド部52をα軸を中心に回動させるとしたが、図8に示すように研磨ヘッド部52を回動させることなく、Y−Z方向(図1参照)に研磨ヘッド部52を移動させて点接触当接工程を行うようにしてもよい。   In the present embodiment, the polishing head portion 52 is rotated about the α axis even in the point contact contact step. However, as shown in FIG. You may make it perform a point contact contact process by moving the grinding | polishing head part 52 to a Z direction (refer FIG. 1).

以上、本発明のウエハエッジ加工装置及びそのエッジ加工方法について詳細に説明したが、本発明は、以上の例には限定されず、本発明の要旨を逸脱しない範囲において、各種の改良や変形を行ってもよいのはもちろんである。   As described above, the wafer edge processing apparatus and the edge processing method of the present invention have been described in detail. However, the present invention is not limited to the above examples, and various improvements and modifications are made without departing from the gist of the present invention. Of course.

1…研磨装置、2…ウエハ、3…ウエハステージ、4…ウエハステージ移動機構、5…研磨ユニット、6…研磨移動機構、51…研磨テープ、52…研磨ヘッド部、71,72,73,74…搬送ローラ、75,76…ガイドローラ、77…シリンダ、78…可動ローラ DESCRIPTION OF SYMBOLS 1 ... Polishing apparatus, 2 ... Wafer, 3 ... Wafer stage, 4 ... Wafer stage moving mechanism, 5 ... Polishing unit, 6 ... Polishing moving mechanism, 51 ... Polishing tape, 52 ... Polishing head part, 71, 72, 73, 74 ... Conveying rollers, 75, 76 ... Guide rollers, 77 ... Cylinders, 78 ... Movable rollers

Claims (8)

ウエハを載置して回転可能な載置台と、
研磨テープを接触させることによって前記ウエハの端部を研磨する研磨部と、
前記研磨部を前記載置台に対して相対的に移動させる移動手段と、を備えるウエハエッジ加工装置であって、
前記研磨部は、前記ウエハの端部に前記研磨テープを略点接触にて当接させる点接触当接手段を備えるウエハエッジ加工装置。
A mounting table on which a wafer can be mounted and rotated;
A polishing portion for polishing an end portion of the wafer by contacting a polishing tape;
A wafer edge processing apparatus comprising: moving means for moving the polishing unit relative to the mounting table;
The polishing unit is a wafer edge processing apparatus comprising point contact abutting means for abutting the polishing tape to an end portion of the wafer by substantially point contact.
前記研磨部は、前記ウエハの端部に前記研磨テープを略線接触にて当接させる線接触当接手段を更に備える請求項1に記載のウエハエッジ加工装置。   2. The wafer edge processing apparatus according to claim 1, wherein the polishing unit further includes a line contact abutting unit that abuts the polishing tape on a substantially linear contact with an end of the wafer. 3. 前記研磨部は、前記載置台の回転軸を含む平面内において、前記ウエハの端部に沿って前記研磨テープが接触する位置を変更させる接触位置変更手段を備える請求項1又は2に記載のウエハエッジ加工装置。   3. The wafer edge according to claim 1, wherein the polishing unit includes contact position changing means for changing a position where the polishing tape contacts along an end portion of the wafer in a plane including a rotation axis of the mounting table. Processing equipment. 前記接触位置変更手段は、前記研磨テープを微小振動させながら前記ウエハの端部に前記研磨テープを接触させる請求項3に記載のウエハエッジ加工装置。   The wafer edge processing apparatus according to claim 3, wherein the contact position changing unit makes the polishing tape contact the end portion of the wafer while slightly vibrating the polishing tape. ウエハを載置して回転可能な載置台と、研磨テープを接触させることによって前記ウエハの端部を研磨する研磨部と、前記研磨部を前記載置台に対して相対的に移動させる移動手段と、を備えるウエハエッジ加工装置のウエハ加工方法であって、
前記ウエハの端部に前記研磨テープを略点接触にて当接させることにより、前記ウエハの端部を研磨する点接触当接ステップを備えるウエハエッジ加工方法。
A mounting table that can be rotated by mounting a wafer; a polishing unit that polishes an end of the wafer by contacting a polishing tape; and a moving unit that moves the polishing unit relative to the mounting table. A wafer processing method of a wafer edge processing apparatus comprising:
A wafer edge processing method comprising a point contact contact step of polishing the end portion of the wafer by bringing the polishing tape into contact with the end portion of the wafer by substantially point contact.
前記ウエハの端部に前記研磨テープを略線接触にて当接させることにより、前記ウエハの端部を研磨する線接触当接ステップを更に備える請求項5に記載のウエハエッジ加工方法。   6. The wafer edge processing method according to claim 5, further comprising a line contact contact step of polishing the end portion of the wafer by bringing the polishing tape into contact with the end portion of the wafer by substantially line contact. 前記載置台の回転軸を含む平面内において、前記ウエハの端部に沿って前記研磨テープが接触する位置を変更させる接触位置変更ステップを更に備える請求項5又は6に記載のウエハエッジ加工方法。   7. The wafer edge processing method according to claim 5, further comprising a contact position changing step of changing a position where the polishing tape contacts along an end portion of the wafer in a plane including the rotation axis of the mounting table. 前記接触位置変更ステップは、前記研磨テープを微小振動させながら前記ウエハの端部に前記研磨テープを接触させる請求項7に記載のウエハエッジ加工方法。   The wafer edge processing method according to claim 7, wherein in the contact position changing step, the polishing tape is brought into contact with an end portion of the wafer while minutely vibrating the polishing tape.
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