JP2014047134A5 - - Google Patents

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Publication number
JP2014047134A5
JP2014047134A5 JP2013173170A JP2013173170A JP2014047134A5 JP 2014047134 A5 JP2014047134 A5 JP 2014047134A5 JP 2013173170 A JP2013173170 A JP 2013173170A JP 2013173170 A JP2013173170 A JP 2013173170A JP 2014047134 A5 JP2014047134 A5 JP 2014047134A5
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JP
Japan
Prior art keywords
plane
gan crystal
base substrate
gan
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013173170A
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English (en)
Japanese (ja)
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JP2014047134A (ja
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Publication date
Application filed filed Critical
Publication of JP2014047134A publication Critical patent/JP2014047134A/ja
Publication of JP2014047134A5 publication Critical patent/JP2014047134A5/ja
Pending legal-status Critical Current

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JP2013173170A 2012-08-31 2013-08-23 Ｉｉｉ族窒化物結晶塊 Pending JP2014047134A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201213695531A 2012-08-31 2012-08-31
US61/695531 2012-08-31

Publications (2)

Publication Number Publication Date
JP2014047134A JP2014047134A (ja) 2014-03-17
JP2014047134A5 true JP2014047134A5 (cg-RX-API-DMAC10.html) 2016-11-24

Family

ID=50607163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013173170A Pending JP2014047134A (ja) 2012-08-31 2013-08-23 Ｉｉｉ族窒化物結晶塊

Country Status (1)

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JP (1) JP2014047134A (cg-RX-API-DMAC10.html)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5420281B2 (ja) * 2009-03-11 2014-02-19 日立金属株式会社 Ｉｉｉ族窒化物半導体単結晶の製造方法、及びｉｉｉ族窒化物半導体単結晶基板の製造方法
US9175418B2 (en) * 2009-10-09 2015-11-03 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
CN103282554A (zh) * 2010-12-27 2013-09-04 三菱化学株式会社 半导体结晶的制造方法、结晶制造装置以及第13族氮化物半导体结晶

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