JP2014041916A - Apparatus for processing semiconductor and method for manufacturing semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus for processing semiconductor suppressing contamination in a processing chamber due to scattering of peeled thin films, thereby capable of improving a recovery rate of the thin films, and a method for manufacturing a semiconductor device using the apparatus for processing semiconductor.SOLUTION: An apparatus for processing semiconductor for processing a surface of a substrate. The apparatus includes: a nozzle 1 discharging a chemical solution for jetting, on the surface of the substrate; and a shower nozzle 2 disposed on the outer periphery of the nozzle 1, surrounding the vicinity of the chemical solution for jetting discharged from the nozzle 1, and discharging a shower liquid so as to form a liquid film reaching up to the surface of the substrate.

Description

  The present invention relates to a semiconductor processing apparatus and a method of manufacturing a semiconductor device using the same, and more particularly to a lift-off device and a lift-off process for a substrate.

  Conventionally, when forming a thin film pattern on a substrate in a manufacturing method of a semiconductor device, a resist pattern is formed by photolithography, and then a thin film such as a metal, a semiconductor, or an insulator is formed by vacuum deposition or sputtering, and a resist stripping solution A so-called lift-off method is also used in which unnecessary portions are removed at the same time when the resist is peeled off by using.

  In general, a lift-off device having a resist stripping solution tank is used for the lift-off. At this time, since it is difficult to increase the peeling speed simply by immersing the substrate in the resist stripping solution, an ultrasonic generator is attached to the stripping solution tank, and ultrasonic waves are also applied to the resist stripping solution. .

  In addition, in JP 2010-263022 A and JP 2005-45156 A, a peeling liquid is jetted onto a substrate while rotating the substrate with a spin table, thereby causing wrinkles and cracks in the thin film. A lift-off device is described in which the stripping solution is circulated, so that the amount of chemical solution used can be reduced and the processing time can be shortened. At this time, generally, as disclosed in JP-A-2005-45156, the processing chamber is provided with a splash prevention cup for preventing and collecting the peeled thin film.

JP 2010-263022 A JP 2005-45156 A

  However, in a conventional lift-off device equipped with a high-pressure jet nozzle, the peeled thin film, resist, and rebound droplets of the peeling liquid are scattered outside the anti-scattering cup by the pressure of the peeling liquid sprayed from the high-pressure jet nozzle. It was not able to suppress effectively. Therefore, there is a problem that the processing chamber is contaminated, and further, the recovery rate of the peeled thin film is lowered.

  The present invention has been made to solve the above-described problems. A main object of the present invention is to provide a semiconductor processing apparatus capable of suppressing contamination of a processing chamber due to scattering of a peeled thin film and improving a thin film recovery rate, and a method of manufacturing a semiconductor device using the semiconductor processing apparatus. It is.

  A semiconductor processing apparatus of the present invention is a semiconductor processing apparatus for processing a substrate surface, a nozzle that discharges a jet chemical on the substrate surface, and an outer periphery of the nozzle, around the jet chemical discharged from the nozzle. And a shower nozzle that discharges shower liquid so as to form a liquid film that surrounds and reaches the substrate surface.

  Thereby, the contamination of the processing chamber due to scattering of the peeled thin film can be suppressed, and the recovery rate of the thin film can be improved.

  ADVANTAGE OF THE INVENTION According to this invention, the contamination of the process chamber by the peeling thin film scattering can be suppressed, and the collection | recovery rate of a thin film can be improved.

1 is an overall view of a semiconductor processing apparatus according to a first embodiment. 1 is a partial schematic diagram of a semiconductor processing apparatus according to a first embodiment. It is a schematic diagram of the substrate processing unit shown in FIG. FIG. 4 is a diagram showing a flow of a method for manufacturing a semiconductor device according to the first embodiment. FIG. 6 is a partial schematic diagram of a semiconductor processing apparatus according to a second embodiment.

  Embodiments of the present invention will be described below. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and the description thereof will not be repeated.

(Embodiment 1)
A semiconductor processing apparatus according to the present embodiment will be described with reference to FIG. As a premise, the semiconductor processing apparatus 100 is an apparatus for forming a thin film pattern by partially peeling a thin film such as a metal or an insulator formed on the surface of the substrate 30. Here, the surface of the substrate 30 set in the semiconductor processing apparatus 100 is one main surface of the substrate 30 and a surface on which a thin film pattern is formed. On the surface of the substrate 30, a resist pattern is formed in a region where a thin film is not formed, and a thin film is formed on the resist pattern.

  The semiconductor processing apparatus 100 according to the present embodiment rotates the substrate 30 and the substrate processing unit 10 that performs a process for removing the resist pattern formed on the surface of the substrate 30 and the thin film formed thereon. There is a spin table 11 to be placed, a recovery cup 12 for recovering a thin film and a resist (hereinafter collectively referred to as a release film) peeled around the spin table 11, and a recovery cup 12. A scattering prevention cover 13 for preventing the peeled thin film from scattering outside the recovery cup 12 is provided inside the processing chamber (not shown).

  2 and 3, the substrate processing unit 10 includes a nozzle 1 that discharges a jet chemical and a shower nozzle 2 that discharges a shower liquid on the surface of the substrate 30.

  The nozzle 1 can have an arbitrary configuration in which a jet chemical solution is ejected as a jet 41 on the surface of the substrate 30 so that the thin film formed on the surface of the substrate 30 by physical and chemical action can be peeled off.

  The physical action refers to an action caused by pressure applied to the surface of the substrate 30 by the jet chemical (jet 41). The pressure applied to the surface of the substrate 30 by the jet chemical is an arbitrary pressure that allows the thin film to be appropriately peeled off, and may be determined depending on the substrate material of the substrate 30, the resist, the combination of the thin film materials, the thin film pattern, and the like. At this time, the nozzle 1 is only required to be connected to a mechanism for pressurizing the jet chemical solution up to the arbitrary pressure. For example, the jet chemical solution pressurized by a pressurizing pump (not shown) passes through the jet pipe 4. It is good also as a structure supplied to the nozzle 1 through.

  The chemical action refers to an action in which the jet chemical solution swells and dissolves the resist. That is, the jet chemical is preferably any chemical that can dissolve the resist.

  The nozzle 1 may be provided so that the jet 41 can be discharged at an arbitrary angle with respect to the substrate surface. Preferably, with reference to FIG. 3, the angle θ <b> 1 at which the jet chemical is discharged as the jet 41 with respect to the substrate surface is 60 ° or more and 90 ° or less. Thereby, since the chemical | medical solution for jets can be discharged evenly to a resist pattern and the side wall part of the thin film formed on it, a thin film and a resist can be peeled irrespective of a resist pattern shape. During the processing, the substrate 30 rotated by the spin table 11 may be scanned while keeping the angle constant.

  The shower nozzle 2 is arranged on the outer periphery of the nozzle 1 and has an arbitrary configuration for discharging shower liquid so as to form a liquid film 42 that surrounds the jet 41 discharged from the nozzle 1 and reaches the substrate surface. be able to. Thus, even when the release film is scattered by receiving the pressure by the jet chemical discharged from the nozzle 1, the release film is formed from the discharge port of the shower nozzle 2 formed so as to surround the jet 41. Since the orbit at the time of scattering changes by contacting with the liquid film 42 of the shower liquid reaching the position, it is possible to prevent the peeling film from scattering to the outside of the recovery cup 12. As a result, the recovery rate of the release film can be improved. Similarly, even when a part of the jet chemical discharged from the nozzle 1 as the jet 41 scatters as a rebound droplet from the substrate, it comes into contact with the liquid film 42 of the shower liquid to reach the outside of the recovery cup 12. It is possible to prevent scattering.

  The pressure of the jet chemical discharged as the jet 41 needs to be a pressure that can peel the thin film by a physical action as described above, while the pressure of the shower liquid is a thin film by a physical action. The pressure should be such that the trajectory of the release film can be corrected so that the scattered release film does not reach the outside of the recovery cup 12. In other words, the pressure of the jet chemical solution may be selected under optimum conditions for peeling of the thin film without considering the scattering of the peeling film, and the pressure of the shower liquid itself causes the peeling of the peeling film or splashing droplets. In addition, the pressure may be set to such a level that the trajectory of the release film scattered by the jet 41 can be corrected. The pressure of each liquid can be arbitrarily set according to the resist pattern or thin film configuration formed on the surface of the substrate 30. For example, the pressure of the chemical liquid for jet is about 7.0 MPa to 15.0 MPa, and the pressure of the shower liquid Is about 0.1 MPa to 1.5 MPa. Further, the ratio of the pressure of the shower liquid to the pressure of the jet chemical liquid may be about 1/50 or more and 1/5 or less. Accordingly, it is possible to realize the prevention of scattering of the peeling film and the splashed droplets to the outside of the collection cup 12 by the liquid film 42 while having good thin film peeling property by the jet 41. At this time, the shower nozzle 2 may be configured to be supplied with the shower liquid having the pressure as described above, for example, by a shower pipe 5 which is a different system from the jet pipe 4 connected to the nozzle 1.

  Preferably, a plurality of shower nozzles 2 are arranged on the outer periphery of the nozzle 1 and include a nozzle member 2 capable of discharging shower liquid in a conical shape. At this time, it reaches the substrate 30 as an annular shape (hollow cone shape). As a result, the flow rate of the shower liquid can be reduced while maintaining the pressure of the shower liquid forming the liquid film 42 as compared with the case where the liquid is discharged on the substrate 30 in a circular shape. Further, the plurality of nozzle members 2 may be arranged on the outer periphery of the nozzle 1 at equal intervals. At this time, it is preferable that a part of the shower liquid discharged conically from each nozzle member 2 is provided so as to interfere with a part of the shower liquid discharged conically from the adjacent nozzle member 2. Thereby, the liquid film 42 of the shower liquid can be reliably formed around the jet chemical liquid discharged from the nozzle 1.

  Referring to FIG. 3, the top angle θ2 of the conical shower liquid discharged from the nozzle member 2 is the liquid of the shower liquid that reaches the substrate surface from the discharge port of the shower nozzle 2 so as to surround the jet 41. As long as the film 42 can be formed, an arbitrary angle may be used. When the angle at which the jet chemical is ejected with respect to the substrate surface is within the above range, for example, the apex angle θ2 may be about 30 ° to 90 °.

  Further, depending on the configuration of the nozzle 1 and the shower nozzle 2, the jet chemical liquid and the shower liquid collide and interfere after reaching the substrate surface after being discharged. When the jet chemical and the shower liquid interfere with each other, the pressure and flow rate of the jet chemical when the jet chemical reaches the substrate surface is reduced by the shower liquid, making it difficult to control the pressure and flow rate of the jet chemical. Become.

  Therefore, it is preferable to further include a cover member 3 positioned between the tip of the nozzle 1 and the nozzle member 2 and surrounding the nozzle 1. Thereby, it is possible to prevent interference between the jetting chemical liquid and the shower liquid being discharged and reaching the substrate surface. As a result, since the pressure drop of the jet chemical liquid can be prevented, the liquid produced by the shower liquid surrounds the jet chemical liquid without preventing the physical action of the jet chemical liquid from acting on the substrate 30. A film 42 can be formed. When the shower liquid flows into the discharge region of the jet 41 after reaching the substrate surface, that is, when the jet chemical liquid and the shower liquid collide on the substrate surface, the pressure of the jet chemical liquid as described above is used. Decline is not a problem.

  In the above-described configuration, the nozzle 1 acts on the thin film peeling of the substrate surface, and the shower nozzle 2 acts on the peeling film peeled off by the nozzle 1. That is, the chemical solution for jet can be an arbitrary chemical solution that swells the resist to have resist releasability, and the shower solution can be any chemical solution that does not inhibit the formation of the thin film pattern by the chemical solution for jet.

  The shower nozzle 2 may have an action of peeling the thin film as long as it does not depend on a physical action. That is, you may have a chemical effect | action by using the arbitrary chemical | medical solution which swells a resist and has resist peelability for a shower liquid. Preferably, the same chemical as the jet chemical is used as the shower liquid. Thereby, the shower liquid discharged from the shower nozzle 2 (or the nozzle member 2) can give a chemical action to the substrate 30 in addition to preventing the release film from scattering, and can swell the resist. As a result, the peeling speed of the thin film can be improved as compared with the case where the thin film pattern is formed using only the jet chemical. Furthermore, after being discharged onto the substrate 30, the mixed waste liquid of the jet chemical liquid and the shower liquid collected in the drain system of the semiconductor processing apparatus 100 can be reused as the shower liquid after being filtered through a filter, for example. .

  Next, a method for manufacturing a semiconductor device using the semiconductor processing apparatus 100 according to the present embodiment will be described with reference to FIG.

  The method of manufacturing a semiconductor device according to the present embodiment includes a step of preparing a substrate having a thin film formed on the surface (S01) and a step of peeling the thin film using the semiconductor processing apparatus 100 according to the present embodiment ( S02).

  In the step (S01), for example, a resist pattern is formed on the surface of the substrate 30 according to the thin film pattern to be formed, and then a thin film is formed on the entire substrate surface. The dimensions and film thickness of the resist pattern may be arbitrarily selected depending on the material of the substrate and the thin film and the film thickness of the thin film.

  Next, in the step (S02), the substrate 30 prepared in the step (S01) is processed using the semiconductor processing apparatus 100 according to the present embodiment, thereby peeling the thin film formed on the substrate surface. A thin film pattern is formed.

At this time, the semiconductor processing apparatus 100 is operated as follows, for example.
First, the substrate 30 prepared in the previous step (S01) is placed on the spin table 11 with the surface on which the resist pattern is formed as a table, and the substrate 30 is rotated at an arbitrary number of rotations.

  In a state where the substrate 30 is rotated, the shower liquid is discharged from the shower nozzle 2 to form a liquid film 42 of the shower liquid that reaches the substrate surface from the discharge port of the shower nozzle 2. Thereafter, a jet chemical is ejected as a jet 41 at an arbitrary angle with respect to the surface of the substrate 30 from the nozzle 1 to peel off the resist pattern and the thin film formed thereon. At this time, since the liquid film 42 is formed so as to surround the jet 41, even if the peeled film peeled off by the jet 41 is scattered, the liquid film 42 of the shower liquid is contacted to correct the trajectory. Further, it is possible to prevent the peeling film from scattering beyond the scattering prevention cover 13 to the outside of the recovery cup 12. Thereby, the recovery rate of the release film can be improved, and at the same time, contamination of the processing chamber by the release film can be suppressed.

  For example, the jet chemical may have a flow rate of about 0.01 to 0.2 L / min and a pressure of about 7.0 to 17.0 MPa. For example, the shower liquid may have a flow rate of about 0.01 to 0.2 L / min and a pressure of about 0.1 to 1.5 MPa discharged from one nozzle member 2.

  Since the substrate processing unit 10 including the nozzle 1 and the shower nozzle 2 is scanned while ejecting the jet chemical and shower liquid while maintaining the conditions such as the angle and the flow rate to the substrate 30, the entire surface of the substrate 30 is uneven. Can be processed without.

  After the peeling process is completed, the substrate 30 may be taken out by performing an arbitrary process such as a washing process or a drying process using a rinse liquid.

  As described above, according to the semiconductor processing apparatus according to the present embodiment, while maintaining the peelability of the thin film and the resist, it is possible to suppress contamination of the processing chamber by the peeled film and improve the recovery rate of the thin film. it can.

(Embodiment 2)
Next, a semiconductor processing apparatus according to the second embodiment of the present invention will be described with reference to FIG. The semiconductor processing apparatus according to the present embodiment basically has the same configuration as that of the first embodiment, but in the substrate processing unit 10 of the first embodiment, the shower liquid discharged from each nozzle member 2 is discharged. In contrast to the conical shape, in the substrate processing unit 20 of the present embodiment, the shower nozzle 2 is configured such that the liquid film 42 of the shower liquid extends in a conical shape while surrounding the jet 41. Different. At this time, the direction in which the shower nozzle 2 discharges the shower liquid is inclined so as to expand with respect to the direction in which the nozzle 1 discharges the jet liquid. In this case, the shower nozzle 2 may be provided by providing a shower liquid discharge port so as to surround the casing of the nozzle 1.

  Thereby, even if it does not use the cover member 3, it can prevent that the chemical | medical solution for jets and a shower liquid interfere.

  As described above, the embodiment of the present invention has been described. However, the embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the embodiments described above but by the scope of claims, and is intended to include all modifications within the meaning and scope equivalent to the scope of claims.

  1 nozzle, 2 shower nozzle (nozzle member), 3 cover member, 4 jet piping, 5 shower piping, 10 and 20 substrate processing unit, 11 spin table, 12 recovery cup, 13 scattering prevention cover, 30 substrate and 41 jet 42 Liquid film, 100 Semiconductor processing equipment.

Claims (7)

A semiconductor processing apparatus for processing a substrate surface,
A nozzle for discharging a jet chemical on the substrate surface;
A semiconductor processing apparatus, comprising: a shower nozzle that is disposed on an outer periphery of the nozzle and that discharges a shower liquid so as to form a liquid film that surrounds the periphery of the jet chemical liquid discharged from the nozzle and reaches the substrate surface .   The semiconductor processing apparatus according to claim 1, wherein a plurality of the shower nozzles are arranged on an outer periphery of the nozzle, and include a nozzle member that discharges the shower liquid in a conical shape to form the liquid film.   The semiconductor processing apparatus according to claim 2, further comprising a cover member that is positioned between a tip portion of the nozzle and the nozzle member and surrounds the periphery of the nozzle.   The semiconductor processing apparatus according to claim 1, wherein the shower nozzle is configured such that the liquid film expands in a conical shape.   The semiconductor processing apparatus according to claim 1, wherein the jet chemical liquid and the shower liquid are the same type of liquid.   The ratio of the pressure of the shower liquid radiated by the shower nozzle to the pressure of the jet chemical liquid ejected by the nozzle is 1/50 or more and less than 1/5. The semiconductor processing apparatus of Claim 1. Preparing a substrate having a thin film formed on the surface;
A method for manufacturing a semiconductor device, comprising the step of peeling the thin film using the semiconductor processing apparatus according to claim 1.

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