JP2014029755A - Method for producing magnetic disk substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for producing a magnetic disk substrate, the method enabling reduction of long wavelength undulation after coarse polishing without greatly increasing the polishing time of the coarse polishing, and great reduction in residual abrasive particulates (protrusive defects) on a substrate.SOLUTION: A production method includes the steps of: (1) polishing a polishing target surface of a polish object substrate, with a polishing liquid composition A containing silica particulates A and water; (2) rinsing the substrate obtained in step 1; (3) polishing a polishing target surface of the substrate obtained in step 2, with a polishing liquid composition B containing silica particulates B and water. The steps (1) and (3) are performed on different polishing machines. The silica particulates A have an average of absolute maximum lengths of 80-500 nm, and contain silica particulates of an average of area ratios (b/a×100) being 110-200% for 30% per mass or more relative to all silica particulates A, where "a" is a projection area of silica particulates, while "b" is an area of a circle with diameter of the absolute maximum length.

Description

  The present invention relates to a method for manufacturing a magnetic disk substrate and a method for polishing a magnetic disk substrate.

  In recent years, magnetic disk drives have been reduced in size and capacity, and high recording density has been demanded. Therefore, it is necessary to improve the detection sensitivity of high recording density magnetic signals, and technical development is underway to reduce the flying height of the magnetic head and reduce the unit recording area. The magnetic disk substrate is designed to improve the smoothness and flatness (reduction of surface roughness, waviness and edge sag) and to reduce surface defects (residual abrasive grains and scratches) in order to reduce the flying height of the magnetic head and ensure the recording area. , Reduction of protrusions, pits, etc.) is strictly demanded.

  From the viewpoint of achieving both improvement in surface quality and productivity, such as smoother and less scratches, such a requirement, the hard disk substrate manufacturing method includes a multi-stage polishing method having two or more polishing steps. Often adopted. In general, in the final polishing step of the multi-stage polishing method, that is, the final polishing step, a polishing composition for finishing that contains colloidal silica particles in order to satisfy the requirements of reducing surface roughness and scratches such as scratches, protrusions, and pits. In the polishing step (also referred to as rough polishing step) prior to the final polishing step, a polishing liquid composition containing alumina particles is used from the viewpoint of improving productivity (for example, Patent Document 1).

  When alumina particles are used as abrasive grains, media scratches may be caused by texture scratches caused by the piercing of alumina particles to the substrate. In order to solve such problems, a polishing composition containing aluminum oxide particles having an average secondary particle size of 0.1 to 0.7 μm and an acid is used to roughen the substrate with a predetermined polishing load. There has been proposed a method of manufacturing a magnetic disk substrate having a polishing step and a final polishing step of polishing the substrate obtained in the rough polishing step with a predetermined polishing amount using a polishing liquid composition containing colloidal particles ( For example, Patent Document 2).

  Recently, as a technique for further reducing the sticking of alumina particles to a substrate, a polishing liquid composition including alumina particles having a specific particle size and silica particles having a specific particle size distribution has been proposed (for example, Patent Document 3). .

  In addition, as a technique for further reducing the piercing of alumina particles to the substrate, (1) a step of polishing with a polishing composition A containing alumina particles and water, (2) a substrate obtained in step (1) A step of rinsing, (3) supplying a polishing composition B containing silica particles and water to the surface to be polished of the substrate obtained in step (2), and moving the polishing pad and / or the substrate to be polished. A method of manufacturing a magnetic disk substrate in which the step of polishing the surface to be polished is performed with the same polishing machine, and the step (4) is performed with a polishing machine different from the polishing machine has been proposed (for example, Patent Document 4). ).

  In general, when silica particles are used, it is known that the polishing rate is lower than that of alumina particles. Therefore, speed improvement studies using silica particles have been conducted so far (for example, Patent Documents 5 to 7).

JP 2005-63530 A JP 2007-168057 A JP 2009-176597 A JP 2011-204327 A JP 2009-91197 A JP 2010-192904 A JP 2008-13655 A

  However, as long as alumina is used, the piercing of the alumina particles to the substrate is not zero, and when silica particles are used, the polishing rate is still insufficient as compared with the alumina particles. It has been found that it is difficult to reduce long wavelength waviness due to weak cutting force (for example, Patent Documents 1 to 5).

  As the capacity of magnetic disk drives increases, the required characteristics for the surface quality of the substrate become more severe, and polishing that can further reduce residual alumina particles on the substrate (for example, alumina adhesion, alumina sticking) in the rough polishing process. There is a need for the development of liquid compositions. As a means of reducing particle piercing, ideal particles are not pulverized like alumina, are relatively sharp in shape, and are softer than alumina, and silica particles are produced by particle growth. Since it is softer than alumina, it can be expected as an alternative to alumina. However, in the method using silica particles, long-wave waviness is greatly deteriorated, and long-time rough polishing is required to achieve the target value after rough polishing, which is not practical.

  Therefore, the present invention can reduce long-wave waviness after rough polishing without significantly prolonging the polishing time for rough polishing, and significantly increases residual abrasive grains (protrusion defects) on the substrate than when alumina particles are used. A method of manufacturing a magnetic disk substrate that can be reduced to a minimum is provided.

In one aspect, the present invention relates to a method for manufacturing a magnetic disk substrate having the following steps (1) to (3).
(1) A polishing liquid composition A containing silica particles A and water is supplied to a surface to be polished of a substrate to be polished, a polishing pad is brought into contact with the surface to be polished, and the polishing pad and / or the substrate to be polished is Moving and polishing the surface to be polished.
(2) A step of cleaning the substrate obtained in step (1).
(3) A polishing liquid composition B containing silica particles B and water is supplied to the polishing target surface of the substrate obtained in step (2), and the polishing pad is brought into contact with the polishing target surface, and the polishing pad and / or Alternatively, a step of polishing the surface to be polished by moving the substrate to be polished.
Here, the steps (1) and (3) are performed by different polishing machines. Moreover, as for the silica particle A contained in the said polishing liquid composition A, the average of the absolute maximum length of the particle | grains obtained by electron microscope observation is 80-500 nm. Further, the silica particle A has an area ratio (b / a × 100) obtained by dividing the area b of the circle having the diameter of the absolute maximum length by the projected area a of the particle obtained by electron microscope observation and multiplying by 100. 30 mass% or more of silica particles which are 110-200% with respect to the total silica particles A are contained.

  In one aspect, the present invention relates to a method for polishing a magnetic disk substrate having the steps (1) to (3). In another aspect, the present invention relates to a polishing system that performs the steps (1) to (3).

  Since the production method of the present invention does not use alumina particles, it is possible to significantly reduce the protrusion defects after rough polishing and after final polishing. In addition, according to the production method of the present invention, long-wave waviness after rough polishing can be reduced without significantly prolonging the polishing time for rough polishing. As a result, it is possible to produce an effect that a magnetic disk substrate with improved substrate quality can be manufactured with high productivity.

FIG. 1 is an example of an electron microscope (TEM) observation photograph of the confetti-type colloidal silica abrasive grain A. FIG. 2 is an example of an electron microscope (TEM) observation photograph of the deformed colloidal silica abrasive grain D. FIG. 3 is a diagram illustrating an embodiment of a polishing system. FIG. 4 is a diagram for explaining an embodiment of a polishing process of a method for manufacturing a magnetic disk substrate.

  If a rough polishing process and a final polishing process that do not use alumina particles are employed in the polishing process of the magnetic disk substrate, residual alumina (for example, alumina adhesion, alumina sticking) can be eliminated, thereby reducing projection defects. However, when performing a rough polishing step and a final polishing step with a polishing composition comprising silica particles instead of alumina particles, long-wave waviness after rough polishing and after final polishing deteriorates, In order to reduce the long wavelength waviness, there is a problem that it is necessary to significantly reduce the polishing rate. If the present invention is a rough polishing step using non-spherical silica particles defined by predetermined parameters as abrasive grains, the polishing time for rough polishing is greatly increased, especially even when alumina particles are not substantially contained. Based on the knowledge that long wavelength waviness after rough polishing can be reduced and the above problems can be solved without prolonging the time.

  Details of the reason why the long wavelength waviness after rough polishing can be reduced without significantly increasing the polishing time of rough polishing by the production method of the present invention is not clear, but specific non-spherical silica particles should be used during rough polishing In the concentrated state of particles generated between the polishing pad being polished and the surface to be polished, the entire particle is fixed, the abrasive retention of the pad is improved, and the cutting distance of the abrasive is increased, thereby increasing the cutting distance of the abrasive. Compared to the case where particles are used, it is estimated that the polishing pressure is uniformly applied over a wide range, and the convex portions on the substrate can be uniformly polished, and the long wavelength waviness is reduced. However, the present invention is not limited to these mechanisms.

  In general, a magnetic disk is manufactured through a recording part forming process by polishing a glass substrate that has undergone a fine grinding process or an aluminum alloy substrate that has undergone a Ni-P plating process through a rough polishing process and a final polishing process. In addition, a rinsing step and a cleaning step may be included between the polishing steps.

  In this specification, “undulation” of a substrate refers to irregularities on the surface of the substrate having a wavelength longer than the roughness. In this specification, “long wave waviness” refers to waviness observed with a wavelength of 500 to 5000 μm. By reducing the waviness of the substrate surface after polishing, the flying height of the magnetic head can be reduced, and the recording density of the magnetic disk substrate can be improved. The long wavelength waviness of the substrate surface can be measured using, for example, the measuring device described in the examples.

  In the present specification, the “protrusion defect” mainly refers to residual abrasive grains, abrasive grain adhesion, and abrasive grain sticking after the rough polishing step and after final polishing. The protrusion defect on the substrate surface can be evaluated by a surface defect inspection apparatus such as microscopic observation or scanning electron microscope observation of the substrate surface obtained after polishing, and can be specifically evaluated by the method described in the examples. .

[Method of manufacturing magnetic disk substrate]
In general, a magnetic disk is made by polishing a glass substrate that has undergone a fine grinding process or an aluminum alloy substrate that has undergone a Ni-P plating process in a rough polishing process and a final polishing process, and then converted into a magnetic disk in a recording part forming process. Manufactured by. In one aspect, the present invention relates to a method for manufacturing a magnetic disk substrate having the following steps (1) to (3).
(1) A polishing liquid composition A containing silica particles A and water is supplied to a surface to be polished of a substrate to be polished, a polishing pad is brought into contact with the surface to be polished, and the polishing pad and / or the substrate to be polished is Moving and polishing the surface to be polished.
(2) A step of cleaning the substrate obtained in step (1).
(3) A polishing liquid composition B containing silica particles B and water is supplied to the polishing target surface of the substrate obtained in step (2), and the polishing pad is brought into contact with the polishing target surface, and the polishing pad and / or Alternatively, a step of polishing the surface to be polished by moving the substrate to be polished.

[Step (1): Rough polishing step]
In the step (1), the polishing composition A containing the silica particles A and water is supplied to the surface to be polished of the substrate to be polished, the polishing pad is brought into contact with the surface to be polished, and the polishing pad and / or the object to be polished In this step, the surface to be polished is polished by moving the substrate. The polishing machine used in the step (1) is not particularly limited, and a known polishing machine for polishing a magnetic disk substrate can be used.

[Step (1): Substrate to be polished]
The substrate to be polished in step (1) is a magnetic disk substrate or a substrate used for a magnetic disk substrate. For example, a Ni-P plated aluminum alloy substrate, silicate glass, aluminosilicate glass, crystallization Examples thereof include glass substrates such as glass and tempered glass. Among them, the substrate to be polished used in the present invention is preferably an Ni-P plated aluminum alloy substrate. There is no restriction | limiting in particular in the shape of the said to-be-polished substrate, For example, what is necessary is just the shape which has planar parts, such as a disk shape, plate shape, slab shape, prism shape, and the shape which has curved surface parts, such as a lens. Of these, a disk-shaped substrate to be polished is suitable. In the case of a disk-shaped substrate to be polished, the outer diameter is, for example, about 2 to 95 mm, and the thickness is, for example, about 0.5 to 2 mm.

[Step (1): Polishing liquid composition A]
In this specification, the polishing liquid composition A is a polishing liquid composition used for the rough polishing in the step (1). The polishing liquid composition A contains water and silica particles A as abrasive grains from the viewpoint of reducing protrusion defects. Moreover, it is preferable that polishing liquid composition A does not contain an alumina abrasive grain from a viewpoint of protrusion defect reduction. In the present specification, “not containing alumina abrasive grains” means that, in one or a plurality of embodiments, it does not contain alumina particles, does not substantially contain alumina particles, and does not contain alumina particles in an amount that functions as abrasive grains. Not including or not including an amount of alumina particles that affects the polishing result. The specific content of alumina particles is not particularly limited, but is preferably 5% by mass or less, more preferably 2% by mass or less, still more preferably 1% by mass or less, and substantially 0%. Is even more preferred.

[Step (1): Silica Particle A]
Polishing liquid composition A contains the silica particle A as an abrasive from a viewpoint of protrusion defect reduction. In one or more embodiments, the silica particles contained in the polishing composition A are referred to as silica particles A. Examples of the silica of the silica particles A include colloidal silica, fumed silica, and surface-modified silica. Colloidal silica is preferable from the viewpoint of reducing long-wave waviness after rough polishing without significantly prolonging the polishing time of rough polishing and reducing protrusion defects. Colloidal silica having a specific shape satisfying the following parameters: Is more preferable. Silica particles A are produced by a flame melting method or a sol-gel method from the viewpoint of reducing long-wave waviness after rough polishing and reducing protrusion defects without significantly extending the polishing time of rough polishing. Rather, silica particles produced by the water glass method are preferred.

[Step (1): Average particle diameter of silica particles A (D50)]
The average particle diameter (D50) of the silica particles A of the present invention is a volume average particle diameter (D50) measured by a laser light scattering method. The average particle diameter (D50) of the silica particles A is used to reduce long-wave waviness after rough polishing without significantly extending the polishing time of rough polishing, and to reduce protrusion defects and long-wave waviness after final polishing. From the viewpoint, it is preferably 50 nm or more, more preferably 60 nm or more, still more preferably 100 nm or more, and even more preferably 110 nm or more. From the same viewpoint, the average particle diameter (D50) of the silica particles A is preferably 500 nm or less, more preferably 400 nm or less, still more preferably 300 nm or less, still more preferably 200 nm or less, and even more preferably 150 nm or less. Further, from the same viewpoint, the average particle diameter (D50) of the silica particles A is preferably 50 to 500 nm, more preferably 60 to 400 nm, further preferably 100 to 300 nm, still more preferably 110 to 200 nm, and further More preferably, it is 110-150 nm. When the average particle diameter (D50) of the silica particles is within the above range, it is considered that the physical polishing force during polishing cutting is strong and long-wave waviness is effectively reduced. The average particle diameter (D50) of the silica particles A is preferably 50 nm or more, more preferably 60 nm or more, still more preferably 100 nm or more, and even more preferably 110 nm or more, from the viewpoint of improving the polishing rate. From the same viewpoint, it is preferably 500 nm or less, more preferably 400 nm or less, still more preferably 300 nm or less, still more preferably 200 nm or less, and even more preferably 180 nm or less. Further, from the same viewpoint, the average particle diameter (D50) of the silica particles A is preferably 50 to 500 nm, more preferably 60 to 400 nm, further preferably 100 to 300 nm, still more preferably 110 to 200 nm, and further More preferably, it is 110-180 nm. Further, the average particle diameter (D50) of the silica particles A is preferably 50 nm or more, more preferably 60 nm, from the viewpoint of reducing long-wave waviness after rough polishing and from the viewpoint of reducing protrusion defects and long-wave waviness after final polishing. More preferably, it is 65 nm or more. From the same viewpoint, it is preferably 500 nm or less, more preferably 300 nm or less, and still more preferably 73 nm or less. Moreover, the average particle diameter (D50) of the silica particle A is preferably 50 to 500 nm, more preferably 60 to 300 nm, and further preferably 65 to 73 nm from the same viewpoint. In addition, an average particle diameter (D50) can be calculated | required by the method as described in an Example.

[Step (1): Absolute maximum length of silica particles A]
In the present specification, the absolute maximum length of a particle refers to the length of the maximum value of the distance between any two points on the particle outline. The average value of the absolute maximum length of silica particles A (hereinafter also referred to as “average absolute maximum length”) is a viewpoint of reducing long-wave waviness after rough polishing without significantly increasing the polishing time of rough polishing; From the viewpoint of reducing protrusion defects and long-wave waviness after finish polishing, the thickness is 80 nm or more, preferably 90 nm or more, more preferably 100 nm or more, still more preferably 110 nm or more, and even more preferably 120 nm or more. From the same viewpoint, the average absolute maximum length of the silica particles A is 500 nm or less, preferably 400 nm or less, more preferably 300 nm or less, still more preferably 200 nm or less, and even more preferably 150 nm or less. Further, from the same viewpoint, the average absolute maximum length of the silica particles A is preferably 80 to 500 nm, more preferably 90 to 400 nm, still more preferably 90 to 300 nm, and still more preferably 90 to 150 nm. When the average absolute maximum length of the silica particles A is within the above range, the physical polishing power during polishing and cutting is strong, and the abrasive retention of the pad is improved. Therefore, it is considered that long wavelength waviness is effectively reduced. . Further, the average absolute maximum length of the silica particles A is 80 nm or more, preferably 90 nm or more, more preferably 100 nm or more, still more preferably 110 nm or more, and even more preferably 120 nm or more, from the viewpoint of improving the polishing rate. . From the same viewpoint, the average absolute maximum length of the silica particles A is 500 nm or less, preferably 450 nm or less, more preferably 400 nm or less, still more preferably 380 nm or less, and even more preferably 350 nm or less. Further, from the same viewpoint, the average absolute maximum length of the silica particles A is preferably 80 to 500 nm, more preferably 90 to 450 nm, still more preferably 100 to 400 nm, still more preferably 110 to 380 nm, and even more preferably. Is 120-350 nm. Further, the average absolute maximum length of the silica particles A is 80 nm or more, preferably from 83 nm or more, from the viewpoint of reducing long-wave waviness after rough polishing and from the viewpoint of reduction of protrusion defects and long-wave waviness after finish polishing. More preferably, it is 85 nm or more. From the same viewpoint, the average absolute maximum length of the silica particles A is 500 nm or less, preferably 300 nm or less, more preferably 100 nm or less. Moreover, from the same viewpoint, the average absolute maximum length of the silica particles A is preferably 80 to 500 nm, more preferably 83 to 300 nm, and still more preferably 85 to 100 nm. The average absolute maximum length can be determined by the method described in the examples.

[Step (1): Area ratio of silica particles A (b / a × 100)]
In this specification, the area ratio (b / a × 100) is 100 by dividing the area b of a circle whose diameter is the absolute maximum length of the particle by the projected area a of the particle obtained by observation with an electron microscope. The value (%) multiplied.

From the viewpoint of reducing long-wave waviness after rough polishing without significantly increasing the polishing time of rough polishing, and from the viewpoint of reducing protrusion defects and long-wave waviness after final polishing, silica particles A The silica particles having an area ratio (b / a × 100) of individual silica particles constituting 110 to 200% are contained in all silica particles A in an amount of 30% by mass or more, preferably 30 to 100% by mass. Preferably it contains 50-100 mass%, More preferably, it is 70-100 mass%, More preferably, it is 80-100 mass%, More preferably, it contains 90-100 mass%. The mass of each silica particle is calculated by converting the projected area a of the particle obtained by observation with an electron microscope into a sphere with a sphere cross-sectional area and calculating the volume, and further calculating the density of the silica particle as 2.2 g / cm ^3. Is obtained.

  When the silica particles A satisfy the above conditions with respect to the area ratio (b / a × 100), the physical polishing power at the time of polishing and cutting is strong and the abrasive retention of the pad is improved, so that long wavelength waviness is effectively reduced. It is thought that it is done. The absolute maximum length can be obtained by the method described in the examples.

  The average value of the area ratio (b / a × 100) of the silica particles A is the viewpoint of reducing long-wave waviness after rough polishing without significantly increasing the polishing time of rough polishing, and the protrusion defects after finish polishing and From the viewpoint of reducing long wavelength waviness, it is preferably 110% or more. From the same viewpoint, the average value of the area ratio (b / a × 100) of the silica particles A is preferably 200% or less, more preferably 180% or less, still more preferably 150% or less, and even more. Preferably it is 140% or less. The average value of the area ratio (b / a × 100) of the silica particles A is the viewpoint of reducing long-wave waviness after rough polishing without significantly increasing the polishing time of rough polishing, and the protrusion defects after finish polishing and From the viewpoint of reducing long wavelength waviness, it is preferably 110 to 200%, more preferably 110 to 180%, still more preferably 110 to 150%, and even more preferably 110 to 140%. Moreover, the average value of the area ratio (b / a × 100) of the silica particles A is preferably 110 to 200%, more preferably 120 to 200%, from the viewpoint of achieving both improvement in polishing rate and reduction in long wavelength waviness. More preferably, it is 130 to 200%, and still more preferably 140 to 200%.

  When the silica particles A satisfy the above two conditions with respect to the area ratio (b / a × 100), the physical polishing power at the time of polishing and cutting is further enhanced, and the abrasive retention of the pad is further improved. It is thought that long wavelength waviness is reduced.

[Step (1): BET specific surface area of silica particles A]
The BET specific surface area of the silica particles A is from the viewpoint of reducing long-wave waviness after rough polishing without significantly increasing the polishing time of rough polishing and from the viewpoint of reducing protrusion defects and long-wave waviness after finish polishing. 10-200 m < ² > / g is preferable, More preferably, it is 20-100 m < ² > / g, More preferably, it is 30-80 m < ² > / g.

[Step (1): Shape of Silica Particle A]
From the viewpoint of reducing long-wave waviness after rough polishing and the reduction of protrusion defects and long-wave waviness after finish polishing, the shape of the silica particles A is a squirrel sugar mold. It is preferable to include at least one kind of silica particles selected from the group consisting of silica particles A1, irregular-shaped silica particles A2, and irregular-shaped and confetti-type silica particles A3.
From the viewpoint of reducing long-wave waviness after rough polishing and the reduction of protrusion defects and long-wave waviness after finish polishing, the shape of the silica particles A is a squirrel sugar mold. Silica particles A1 are preferred. In the present specification, the “gold saccharide-type silica particles” refers to silica particles having unique hook-shaped protrusions on the spherical particle surface. In one or a plurality of embodiments, the silica particle A1 has a shape in which two or more particles different in particle size by 5 times or more are aggregated or fused on the basis of the particle size of the smallest silica particle. In addition, the said particle size can be calculated | required as an equivalent circle diameter measured within one particle | grain in an electron microscope (TEM etc.) observation image. The particle diameter in silica particle A2 and silica particle A3 can be similarly determined.

  In addition, the shape of the silica particles A is from the viewpoint of reducing long-wave waviness after rough polishing without significantly prolonging the polishing time of rough polishing, and from the viewpoint of reducing protrusion defects and long-wave waviness after finish polishing. The deformed silica particles A2 are preferred. In the present specification, “deformed silica particles” refers to silica particles having a shape in which two or more particles, preferably 2 to 10 particles are aggregated or fused. In one or a plurality of embodiments, the silica particle A2 has a shape in which two or more particles having a particle size of 1.5 times or less are aggregated or fused on the basis of the particle size of the smallest silica particle.

  In addition, the shape of the silica particles A is from the viewpoint of reducing long-wave waviness after rough polishing without significantly prolonging the polishing time of rough polishing, and from the viewpoint of reducing protrusion defects and long-wave waviness after finish polishing. It is preferable that the silica particles A3 are irregular and confetti type silica particles. In the present specification, the “irregular and confetti type silica particles” refers to particles having a shape in which two or more particles are aggregated or fused. In one or a plurality of embodiments, the silica particle A3 is a particle obtained by agglomerating or fusing two or more particles having a particle size of 1.5 times or less, and further a small particle having a particle size of 1/5 or less agglomerates. Or it is a fused shape.

  In one or more embodiments, the silica particle A is any one of the silica particles A1, A2, and A3, any two of the silica particles A1, A2, and A3, or the silica particles A1, A2, and A3. Includes everything. The ratio (mass ratio) occupied by the total of silica particles A1, A2, and A3 in silica particle A is the viewpoint of reducing long-wave waviness after rough polishing and finish polishing without significantly extending the polishing time of rough polishing. From the viewpoint of reduction of subsequent protrusion defects and long wavelength waviness, 50% by mass or more is preferable, more preferably 70% by mass or more, still more preferably 80% by mass or more, still more preferably 90% by mass or more, and even more preferably. It is substantially 100% by mass, and even more preferably 100% by mass.

  When silica particle A contains silica particles A1 and A2, the mass ratio of A1 / A2 is preferably in the range of 5/95 to 95/5 in one or more embodiments. From the viewpoint of reducing long-wave waviness after rough polishing without significantly prolonging the polishing time of rough polishing, and from the viewpoint of reducing protrusion defects and long-wave waviness after final polishing, the mass ratio of A1 / A2 is more It is preferably 20/80 to 80/20, more preferably 20/80 to 60/40, even more preferably 20/80 to 40/60, and even more preferably 20/80 to 30/70. It is.

[Step (1): Content of Silica Particle A in Polishing Liquid Composition A]
The content of silica particles contained in the polishing liquid composition A is the viewpoint of reducing long-wave waviness after rough polishing without significantly extending the polishing time for rough polishing, as well as protrusion defects and long-wave waviness after final polishing. From the viewpoint of reduction, the content is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, further preferably 1% by mass or more, and further more preferably 2% by mass or more. The content is preferably 30% by mass or less, more preferably 25% by mass or less, still more preferably 20% by mass or less, and even more preferably 15% by mass or less from the viewpoint of economy. Therefore, the content of the silica particles is from the viewpoint of reducing long wavelength waviness after rough polishing without significantly extending the polishing time of rough polishing and from the viewpoint of reducing protrusion defects and long wavelength waviness after finish polishing. And from a viewpoint of economical efficiency, 0.1-30 mass% is preferable, 0.5-25 mass% is more preferable, 1-20 mass% is further more preferable, 2-15 mass% is still more preferable.

[Step (1): Acid in Polishing Liquid Composition A]
The polishing liquid composition A preferably contains an acid from the viewpoint of improving the polishing rate. Use of the acid in the polishing liquid composition A includes use of an acid and / or a salt thereof. Examples of acids used include nitric acid, sulfuric acid, sulfurous acid, persulfuric acid, hydrochloric acid, perchloric acid, phosphoric acid, phosphonic acid, phosphinic acid, pyrophosphoric acid, tripolyphosphoric acid, amidosulfuric acid, 2-aminoethylphosphonic acid, and the like. 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri (methylenephosphonic acid), ethylenediaminetetra (methylenephosphonic acid), diethylenetriaminepenta (methylenephosphonic acid), ethane-1,1, -diphosphonic acid, ethane-1, 1,2-triphosphonic acid, ethane-1-hydroxy-1,1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, methanehydroxyphosphonic acid, 2-phosphonobutane-1,2 -Dicarboxylic acid, 1-phosphonobutane-2,3,4-tricarboxylic acid, α-methylphosphonoco Organic phosphonic acids such as click acid, glutamic acid, picolinic acid, amino acids such as aspartic acid, citric acid, tartaric acid, oxalic acid, nitro acid, maleic acid, and carboxylic acids such as oxaloacetic acid. Among them, phosphoric acid, sulfuric acid, and citric acid are used from the viewpoint of reducing long-wave waviness after rough polishing without significantly prolonging the polishing time of rough polishing and reducing protrusion defects and long-wave waviness after final polishing. , Tartaric acid, maleic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri (methylenephosphonic acid), ethylenediaminetetra (methylenephosphonic acid), diethylenetriaminepenta (methylenephosphonic acid) and salts thereof are more preferred, sulfuric acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri (methylenephosphonic acid) and their salts are more preferred, and sulfuric acid is even more preferred.

  These acids and salts thereof may be used alone or in admixture of two or more, but the viewpoint of reducing long-wave waviness after rough polishing and finish polishing without greatly prolonging the polishing time of rough polishing It is preferable to use a mixture of two or more of them from the viewpoint of the reduction of subsequent projection defects and long wavelength waviness, and phosphoric acid, sulfuric acid, citric acid, tartaric acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri ( More preferably, a mixture of two or more acids selected from the group consisting of (methylenephosphonic acid) is used.

  When these acid salts are used, there is no particular limitation, and specific examples include metals, ammonium, alkylammonium and the like. Specific examples of the metal include metals belonging to the periodic table (long-period type) 1A, 1B, 2A, 2B, 3A, 3B, 4A, 6A, 7A, or Group 8. Among these, from the viewpoint of improving the polishing rate and roll-off characteristics, a metal belonging to Group 1A or a salt with ammonium is preferable.

  The content of the acid in the polishing liquid composition A is such that the long-wave waviness after rough polishing is reduced without significantly increasing the polishing time for rough polishing, and the protrusion defects and long-wave waviness after finishing polishing. From the viewpoint of reduction, 0.001 to 5% by mass is preferable, more preferably 0.01 to 4% by mass, still more preferably 0.05 to 3% by mass, and still more preferably 0.1 to 2% by mass. .

[Step (1): Oxidizing agent in polishing liquid composition A]
The polishing composition A is oxidized from the viewpoint of reducing long-wave waviness after rough polishing without significantly prolonging the polishing time of rough polishing and from the viewpoint of reducing protrusion defects and long-wave waviness after final polishing. It is preferable to contain an agent. Examples of the oxidizing agent include peroxide, permanganic acid or a salt thereof, chromic acid or a salt thereof, peroxo acid or a salt thereof, oxygen acid or a salt thereof from the viewpoint of polishing rate and reduction of residual alumina. Among these, hydrogen peroxide, iron nitrate (III), peracetic acid, ammonium peroxodisulfate, iron sulfate (III), and ammonium iron sulfate (III) are preferable, and metal ions do not adhere to the surface from the viewpoint of improving the polishing rate. From the viewpoint of being used for general purposes and inexpensive, hydrogen peroxide is more preferable. These oxidizing agents may be used alone or in admixture of two or more.

  The content of the oxidizing agent in the polishing composition A is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and further preferably 0.1% by mass or more from the viewpoint of improving the polishing rate. From the viewpoint of reducing long-wave waviness after rough polishing without significantly prolonging the polishing time of rough polishing, and from the viewpoint of reducing protrusion defects and long-wave waviness after finish polishing, preferably 4% by mass or less More preferably, it is 2 mass% or less, More preferably, it is 1.5 mass% or less. Further, from the viewpoint of reducing long-wave waviness after rough polishing without significantly prolonging the polishing time of rough polishing, and from the viewpoint of reducing protrusion defects and long-wave waviness after finish polishing, the content is preferably It is 0.01-4 mass%, More preferably, it is 0.05-2 mass%, More preferably, it is 0.1-1.5 mass%.

[Step (1): Water in Polishing Liquid Composition A]
Polishing liquid composition A contains water as a medium. As water, distilled water, ion-exchanged water, pure water, ultrapure water, or the like can be used. The water content in the polishing liquid composition A is preferably 61 to 99% by mass, more preferably 70 to 98% by mass, and still more preferably 80 to 97% by mass, because the handling of the polishing liquid composition becomes easy. Even more preferably, it is 85 to 97% by mass.

[Step (1): Other components in polishing liquid composition A]
In the polishing composition A, other components can be blended as necessary. Examples of other components include thickeners, dispersants, rust inhibitors, basic substances, polishing rate improvers, surfactants, and polymer compounds. It is preferable to mix | blend content of these other arbitrary components in polishing liquid composition A in the range which does not impair the effect of this invention, 0-10 mass% is preferable, and 0-5 mass% is more preferable.

[Step (1): Speed improver in polishing composition A]
The polishing composition A is selected from the group consisting of ferrous nitrate, ferric nitrate, ferrous sulfate, ferric sulfate, ferrous chloride, and ferric chloride from the viewpoint of speed improvement. At least one salt may be contained. From the viewpoint of reducing long-wave waviness after rough polishing without significantly prolonging the polishing time of rough polishing, and from the viewpoint of reducing protrusion defects and long-wave waviness after final polishing, the content is preferably 0.8. It is 005-5.0 mass%, More preferably, it is 0.05-3.0 mass%, More preferably, it is 0.07-2.0 mass%, More preferably, it is 0.1-1.0 mass%. In addition, these compounds react with an oxidizing agent and are activated. From the viewpoint of preventing the stability of the oxidant from being impaired by coexisting with the oxidant for a long time in the polishing liquid composition A, the compound and the polishing liquid composition A may be mixed immediately before polishing. preferable. Alternatively, from the same viewpoint, a method in which two polishing liquid supply ports are provided on a polishing machine and the polishing liquid composition A and the compound are simultaneously supplied at the time of polishing and mixed in the polishing machine is preferable.

[Step (1): pH of polishing composition A]
The pH of the polishing composition A is from the viewpoint of reducing long-wave waviness after rough polishing without significantly extending the polishing time of rough polishing, and from the viewpoint of reducing protrusion defects and long-wave waviness after finish polishing. It is preferable to adjust the pH to 0.5 to 6.0 using the aforementioned acid or a known pH adjuster, more preferably pH 0.7 to 4.0, still more preferably pH 0.9 to 3.0, More preferably, the pH is 1.0 to 3.0, and still more preferably pH 1.0 to 2.0. In addition, said pH is pH of polishing liquid composition in 25 degreeC, can be measured using a pH meter, and is a numerical value 40 minutes after immersion in the polishing liquid composition of an electrode.

[Step (1): Preparation method of polishing liquid composition A]
The polishing liquid composition A can be prepared, for example, by mixing the silica particles A and water, and, if desired, an oxidizing agent, an acid and other components by a known method. As another embodiment, the polishing liquid composition A may be prepared as a concentrate. The mixing is not particularly limited, and can be performed using a homomixer, a homogenizer, an ultrasonic disperser, a stirrer such as a wet ball mill, or the like.

[Step (1): Polishing pad]
There is no restriction | limiting in particular as a polishing pad used by the rough | crude grinding | polishing process of a process (1), It is using the polishing pad of a suede type, a nonwoven fabric type, a polyurethane closed-cell foam type, or the two-layer type which laminated | stacked these. However, a suede type polishing pad is preferable from the viewpoint of improving the polishing rate. A suede type polishing pad is composed of a foam layer having a base layer and spindle-shaped pores perpendicular to the base layer. Examples of the material for the base layer include non-woven fabrics made of natural fibers such as cotton and synthetic fibers, and base layers obtained by filling rubber-like substances such as styrene-butadiene rubber. Polyester terephthalate (PET) from which a polyester film is preferred and a high-hardness resin film can be obtained from the viewpoint of reducing long-wave waviness after rough polishing without reducing the thickness, and from the viewpoint of reducing protrusion defects and long-wave waviness after final polishing A film is more preferable. In addition, examples of the material for the foam layer include polyurethane, polystyrene, polyester, polyvinyl chloride, natural rubber, and synthetic rubber. From the viewpoint of improving the physical properties such as compressibility and improving the abrasion resistance during polishing. Therefore, polyurethane is preferable, and polyurethane elastomer is more preferable.

  Further, the average pore diameter of the polishing pad used in the step (1) is the viewpoint of reducing the long-wave waviness after the rough polishing without significantly extending the polishing time of the rough polishing, and the protrusion defects after the final polishing, From the viewpoint of reducing long wavelength waviness, 10 to 100 μm is preferable, more preferably 20 to 80 μm, still more preferably 30 to 60 μm, and still more preferably 35 to 55 μm.

[Step (1): Polishing load]
In this specification, the polishing load means the pressure of the surface plate applied to the polishing surface of the substrate to be polished during polishing. The polishing load in the step (1) is from the viewpoint of reducing long-wave waviness after rough polishing without significantly extending the polishing time of rough polishing, and from the viewpoint of reducing protrusion defects and long-wave waviness after final polishing. It is preferably 30 kPa or less, more preferably 25 kPa or less, still more preferably 20 kPa or less, even more preferably 18 kPa or less, even more preferably 16 kPa or less, and even more preferably 14 kPa or less. In addition, the polishing load is 3 kPa or more from the viewpoint of reducing long-wave waviness after rough polishing without significantly prolonging the polishing time of rough polishing and from the viewpoint of reducing protrusion defects and long-wave waviness after final polishing. Preferably, it is 5 kPa or more, more preferably 7 kPa or more, even more preferably 8 kPa or more, and even more preferably 9 kPa or more. The polishing load is preferably from the viewpoint of reducing long-wave waviness after rough polishing without significantly extending the polishing time of rough polishing, and from the viewpoint of reducing protrusion defects and long-wave waviness after finish polishing. It is 3 to 30 kPa, more preferably 5 to 25 kPa, still more preferably 7 to 20 kPa, even more preferably 8 to 18 kPa, still more preferably 9 to 16 kPa, and even more preferably 9 to 14 kPa. The polishing load can be adjusted by applying air pressure or weight to the surface plate or the substrate.

[Step (1): Polishing amount]
In the step (1), the polishing amount per unit area (1 cm ² ) of the substrate to be polished is reduced in the long wavelength waviness after the rough polishing without significantly increasing the polishing time of the rough polishing and after the final polishing. From the viewpoint of reducing protrusion defects and long wavelength waviness, the amount is preferably 0.20 mg or more, more preferably 0.30 mg or more, and further preferably 0.40 mg or more. On the other hand, from the viewpoint of reducing long-wave waviness after rough polishing without significantly prolonging the polishing time of rough polishing and from the viewpoint of reducing protrusion defects and long-wave waviness after finish polishing, 2.50 mg or less is preferable, More preferably, it is 2.00 mg or less, More preferably, it is 1.50 mg or less. Further, from the viewpoint of reducing long-wave waviness after rough polishing without significantly extending the polishing time of rough polishing, and from the viewpoint of reducing protrusion defects and long-wave waviness after final polishing, the polishing amount is preferably 0. .20 to 2.50 mg, more preferably 0.30 to 2.00 mg, and still more preferably 0.40 to 1.50 mg.

[Step (1): Polishing rate reduction rate]
In the present specification, the “polishing rate reduction rate” is a measure of the degree to which the polishing composition is held on the polishing pad, and the polishing rate when the polishing composition is allowed to flow for 4 minutes in the polishing machine is the reference rate. After 4 minutes, the polishing is continued while the supply of the polishing liquid is stopped, and the polishing speed 1 minute after the supply stop is set as the post-stop speed, and the difference between the reference speed and the post-stop speed is the reference speed. It is a value (%) divided by 100 and multiplied by 100. Specific polishing conditions can be the polishing conditions of step (1) in the examples described later.

  The polishing composition A and the silica particles A are used to reduce long-wave waviness after rough polishing without significantly increasing the polishing time for rough polishing, and to reduce protrusion defects and long-wave waviness after finish polishing. Therefore, it is preferable that the polishing rate reduction rate satisfies 15% or less, more preferably 12.0% or less, still more preferably 8.0% or less, and even more preferably 5.0% or less.

[Step (1): Long Wavelength Waviness of Polished Substrate]
In the polishing in the step (1), from the viewpoint of reducing the long wavelength waviness of the substrate after finish polishing and shortening the time of the final polishing, the long wavelength waviness of the surface to be polished of the substrate to be polished is 3.5 mm (0.35 nm). ) It is preferable to carry out until it becomes below, More preferably, it is 3.4 or less, More preferably, it is 3.2 or less, Even more preferably, it is 3.0 or less, Even more preferably, it is 2.7 or less, Even more preferably, it is 2. 4 or less. Therefore, in one or a plurality of embodiments, the present invention relates to at least one of the substrate to be polished polished in the step (1) or the substrate after the cleaning in the step (2). Wavelength waviness) and the waviness is 3.5 mm (0.35 nm) or less, preferably 3.4 mm or less, more preferably 3.2 mm or less, still more preferably 3.0 mm or less, and still more preferably The present invention relates to a method of manufacturing a magnetic disk substrate, including performing step (3) when the thickness is 2.7 mm or less, and even more preferably 2.4 mm or less.

[Step (1): Supply rate of polishing composition A]
The supply rate of the polishing liquid composition A in the step (1) is preferably 2.5 mL / min or less per 1 cm ^{2 of the} substrate to be polished, more preferably 2.0 mL / min or less, and further preferably 1 from the economical viewpoint. 0.5 mL / min or less, even more preferably 1.0 mL / min or less, even more preferably 0.5 mL / min or less, and even more preferably 0.2 mL / min or less. The supply rate is preferably 0.01 mL / min or more per 1 cm ^{2 of the} substrate to be polished, more preferably 0.03 mL / min or more, further preferably 0.05 mL / min or more from the viewpoint of improving the polishing rate. is there. The supply rate is preferably 0.01 to 2.5 mL / min, more preferably 0.03 to 2.0 mL / min per 1 cm ^{2 of the} substrate to be polished, from the viewpoints of economy and improvement of the polishing rate. More preferably 0.03-1.5 mL / min, even more preferably 0.03-1.0 mL / min, even more preferably 0.05-0.5 mL / min, even more preferably 0.05- 0.2 mL / min.

[Step (1): Method of supplying polishing liquid composition A to polishing machine]
Examples of a method for supplying the polishing liquid composition A to the polishing machine include a method in which the polishing liquid composition A is continuously supplied using a pump or the like. When supplying the polishing liquid composition A to the polishing machine, in addition to the method of supplying it with one liquid containing all the components, considering the storage stability of the polishing liquid composition A, a plurality of component liquids for blending It can also be divided into two liquids or more. In the latter case, for example, the plurality of compounding component liquids are mixed into the polishing liquid composition A in the supply pipe or on the substrate to be polished.

[Step (2): Cleaning step]
Step (2) is a step of cleaning the substrate obtained in step (1). Step (2) is a step of cleaning the substrate that has been subjected to the rough polishing in step (1) with a cleaning composition in one or more embodiments. Although the cleaning method in the step (2) is not particularly limited, in one or a plurality of embodiments, the method of immersing the substrate obtained in the step (1) in the cleaning composition (cleaning method a), and the cleaning agent The method (cleaning method b) which injects a composition and supplies a cleaning composition on the surface of the board | substrate obtained by process (1) is mentioned.

[Step (2): Cleaning method a]
In the cleaning method a, the conditions for immersing the substrate in the cleaning composition are not particularly limited. For example, the temperature of the cleaning composition is 20 to 100 ° C. from the viewpoint of safety and operability. The immersion time is preferably from 10 seconds to 30 minutes from the viewpoint of the cleaning properties and production efficiency of the cleaning composition. Moreover, it is preferable that ultrasonic vibration is given to the cleaning composition from the viewpoint of improving the removability of the residue and the dispersibility of the residue. The frequency of the ultrasonic wave is preferably 20 to 2000 kHz, more preferably 40 to 2000 kHz, and further preferably 40 to 1500 kHz.

[Step (2): Cleaning method b]
In the cleaning method b, from the viewpoint of promoting the cleaning performance of the residue and the solubility of the oil, the cleaning composition to which ultrasonic vibration is applied is injected to bring the cleaning composition into contact with the surface of the substrate. Or cleaning the surface by supplying the cleaning composition onto the surface of the substrate to be cleaned by injection and rubbing the surface supplied with the cleaning composition with a cleaning brush. preferable. Furthermore, the cleaning composition to which ultrasonic vibration is applied is supplied to the surface to be cleaned by injection, and the surface to which the cleaning composition is supplied is cleaned by rubbing with a cleaning brush. Is preferred.

  As means for supplying the cleaning composition onto the surface of the substrate to be cleaned, known means such as a spray nozzle can be used. Moreover, there is no restriction | limiting in particular as a brush for washing | cleaning, For example, well-known things, such as a nylon brush and a PVA (polyvinyl alcohol) sponge brush, can be used. The ultrasonic frequency may be the same as the value preferably adopted in the method (a).

  In the step (2), in addition to the cleaning method a and / or the cleaning method b, one or more steps using known cleaning such as rocking cleaning, cleaning using rotation of a spinner, paddle cleaning, scrub cleaning, and the like are included. But you can.

[Step (2): Cleaning composition]
As a cleaning composition of a process (2), in one or some embodiment, what contains an alkali agent, water, and various additives as needed can be used.

[Step (2): Alkaline agent in cleaning composition]
The alkaline agent used in the cleaning composition may be either an inorganic alkaline agent or an organic alkaline agent. Examples of the inorganic alkaline agent include ammonia, potassium hydroxide, and sodium hydroxide. Examples of the organic alkali agent include one or more selected from the group consisting of hydroxyalkylamine, tetramethylammonium hydroxide, and choline. These alkaline agents may be used alone or in combination of two or more. From the viewpoint of improving the dispersibility of the residue on the substrate of the cleaning composition and improving the storage stability, the alkaline agent includes potassium hydroxide, sodium hydroxide, monoethanolamine, methyldiethanolamine, and aminoethylethanol. At least one selected from the group consisting of amines is preferred, and at least one selected from the group consisting of potassium hydroxide and sodium hydroxide is more preferred.

  The content of the alkaline agent in the cleaning composition is 0.05 to 10% by mass from the viewpoint of developing a high cleaning property for the residue on the substrate of the cleaning composition and enhancing safety during handling. Is preferable, 0.08 to 5% by mass is more preferable, and 0.1 to 3% by mass is further preferable.

  From the viewpoint of improving the dispersibility of the residue on the substrate, the pH of the cleaning composition is preferably 8 to 13, more preferably 9 to 13, still more preferably 10 to 13, and even more preferably 11. ~ 13. In addition, said pH is pH of the cleaning composition at 25 degreeC, can be measured using a pH meter, and is a numerical value 40 minutes after immersion in the cleaning composition of an electrode.

[Step (2): Various additives in the cleaning composition]
In addition to alkaline agents, the detergent composition includes nonionic surfactants, chelating agents, ether carboxylates or fatty acids, anionic surfactants, water-soluble polymers, antifoaming agents (surfactants corresponding to the components) May be included), alcohols, preservatives, antioxidants, and the like.

  The content of components other than water contained in the cleaning composition is a concentration that exhibits sufficient effects for improving workability, economy and storage stability, and is compatible with improving storage stability. From the viewpoint, when the total of the content of water and the content of components other than water is 100% by mass, it is preferably 10 to 60% by mass, more preferably 15 to 50% by mass, and still more preferably 15 to 40% by mass.

  The cleaning composition is used after being diluted. The dilution rate is preferably 10 to 500 times, more preferably 20 to 200 times, and still more preferably 50 to 100 times in consideration of cleaning efficiency. The water for dilution may be the same as the above-mentioned polishing composition. The cleaning composition may be a concentrate based on the dilution factor.

[Step (3): Final polishing step]
In the step (3), the polishing composition B containing silica particles and water is supplied to the polishing target surface of the substrate obtained in the step (2), the polishing pad is brought into contact with the polishing target surface, and the polishing pad And / or polishing the surface to be polished by moving the substrate to be polished. The polishing machine used in the step (3) uses a pad having a different pore diameter from that for rough polishing in order to reduce long-wave waviness after polishing, to reduce protrusion defects, and to effectively reduce other surface defects. From the viewpoint of use, the polishing machine is different from the polishing machine used in the step (1). The supply rate of the polishing liquid composition B used in the step (3) and the method of supplying the polishing liquid composition B to the polishing machine can be the same as those of the polishing liquid composition A described above.

  The magnetic disk substrate manufacturing method of the present invention includes a rough polishing step in step (1), a cleaning step in step (2), and a final polishing step in step (3), thereby greatly increasing the polishing time for rough polishing. In addition, the long-wave waviness and protrusion defects after rough polishing are reduced without prolonging the time, and a substrate in which long-wave waviness and protrusion defects after finish polishing is reduced can be efficiently manufactured.

[Step (3): Polishing liquid composition B]
Polishing liquid composition B used at a process (3) contains a silica particle (silica particle B) as an abrasive grain from a viewpoint of the reduction | restoration of the protrusion defect and long wavelength waviness after final polishing. The silica particles B used are preferably colloidal silica from the viewpoint of reducing long wavelength waviness and protrusion defects after finish polishing. Moreover, it is preferable that the polishing liquid composition B does not contain an alumina abrasive grain from the viewpoint of reducing long-wave waviness and protrusion defects after finish polishing.

  The average particle diameter (D50) of the silica particles B used in the polishing liquid composition B is preferably 5 to 50 nm, more preferably 10 to 45 nm, from the viewpoint of reducing long-wave waviness and protrusion defects after finish polishing. Preferably it is 15-40 nm, More preferably, it is 20-35 nm. Further, the average particle diameter (D50) of the silica particles B is preferably smaller than the average particle diameter (D50) of the silica particles A from the viewpoint of reducing long wavelength waviness and protrusion defects after finish polishing. In addition, this average particle diameter can be calculated | required by the method as described in an Example.

  Further, the standard deviation of the particle diameter of the silica particles B is preferably 5 to 40 nm, more preferably 10 to 35 nm, and still more preferably 15 to 30 nm, from the viewpoint of reducing long wavelength waviness and protrusion defects after finish polishing. . In addition, this standard deviation can be calculated | required by the method as described in an Example.

  The content of the silica particles B contained in the polishing composition B is preferably 0.5 to 20% by mass, and 1.0 to 15% by mass from the viewpoint of reducing long-wave waviness and protrusion defects after finish polishing. More preferably, 3.0-13 mass% is further more preferable, and 4.0-10 mass% is still more preferable.

  Polishing liquid composition B contains 1 or more types chosen from the polymer which has a heterocyclic aromatic compound, a polyvalent amine compound, and an anionic group from a viewpoint of reducing the long wavelength waviness and protrusion defect after final polishing. It is preferable to include two or more types, and it is more preferable to include a heterocyclic aromatic compound, a polyvalent amine compound, and a polymer having an anionic group.

  The polishing composition B preferably contains an acid and an oxidizing agent from the viewpoint of improving the polishing rate. About the preferable usage aspect of an acid and an oxidizing agent, it is the same as that of the case of the above-mentioned polishing liquid composition A. Further, the water used for the polishing liquid composition B, the pH of the polishing liquid composition B, and the method for preparing the polishing liquid composition B are the same as those of the polishing liquid composition A described above.

[Step (3): Polishing pad]
As the polishing pad used in the step (3), the same type of polishing pad as that used in the step (1) can be used. The average pore diameter of the polishing pad used in the step (3) is preferably 1 to 50 μm, more preferably 2 to 40 μm, and further preferably 3 to 3% from the viewpoint of reducing long-wave waviness and protrusion defects after finish polishing. 30 μm.

[Step (3): Polishing load]
The polishing load in the step (3) is preferably 16 kPa or less, more preferably 14 kPa or less, and further preferably 13 kPa or less, from the viewpoint of reducing long wavelength waviness and protrusion defects after finish polishing. From the viewpoint of reducing long-wave waviness and protrusion defects after final polishing, 7.5 kPa or more is preferable, more preferably 8.5 kPa or more, and further preferably 9.5 kPa or more. The polishing load is preferably 7.5 to 16 kPa, more preferably 8.5 to 14 kPa, and still more preferably 9.5 to 13 kPa, from the viewpoint of reducing long-wave waviness and protrusion defects after finish polishing. .

[Step (3): Polishing amount]
In the step (3), the polishing amount per unit area (1 cm ² ) of the substrate to be polished and the polishing time per minute is preferably 0.02 mg or more from the viewpoint of reducing long wavelength waviness and protrusion defects after finish polishing. More preferably, it is 0.03 mg or more, More preferably, it is 0.04 mg or more. Moreover, from a viewpoint of productivity improvement, 0.15 mg or less is preferable, More preferably, it is 0.12 mg or less, More preferably, it is 0.10 mg or less. Accordingly, the polishing amount is preferably 0.02 to 0.15 mg, more preferably 0.03 to 0.12 mg, and still more preferably 0.04 to 0.10 mg, from the same viewpoint as described above.

  Further, the supply rate of the polishing liquid composition B and the method of supplying the polishing liquid composition B to the polishing machine in the step (3) are the same as in the case of the polishing liquid composition A described above.

  According to the manufacturing method of the present invention, it is possible to provide a magnetic disk substrate with reduced long-wave waviness and protrusion defects. Therefore, it is suitably used for polishing a perpendicular magnetic recording type magnetic disk substrate that requires a high degree of surface smoothness. be able to.

[Polishing method]
This invention relates to the grinding | polishing method which has the process (1), process (2), and process (3) mentioned above as another aspect. Regarding substrate to be polished, polishing pad, polishing liquid composition A, silica particle A, polishing liquid composition B, silica particle B, polishing method and conditions, cleaning composition and cleaning method in steps (1) to (3) Can be the same as the above-described method for manufacturing a magnetic disk substrate of the present invention.

As another aspect, the present invention relates to a method for polishing a magnetic disk substrate which includes the following steps (1) to (3) and is performed by a polishing machine different from the following step (1) and the following step (3). . Regarding substrate to be polished, polishing pad, polishing liquid composition A, silica particle A, polishing liquid composition B, silica particle B, polishing method and conditions, cleaning composition and cleaning method in steps (1) to (3) Can be the same as the above-described method for manufacturing a magnetic disk substrate of the present invention.
(1) A polishing liquid composition A containing silica particles A and water is supplied to a surface to be polished of a substrate to be polished, a polishing pad is brought into contact with the surface to be polished, and the polishing pad and / or the substrate to be polished is Moving and polishing the surface to be polished.
(2) A step of cleaning the substrate obtained in step (1).
(3) A polishing liquid composition B containing silica particles B and water is supplied to the polishing target surface of the substrate obtained in step (2), and the polishing pad is brought into contact with the polishing target surface, and the polishing pad and / or Alternatively, a step of polishing the surface to be polished by moving the substrate to be polished.

  By using the polishing method of the present invention, a magnetic disk substrate with reduced long-wave waviness and protrusion defects, particularly a perpendicular magnetic recording type magnetic disk substrate is preferably provided. As a result, it is possible to manufacture a magnetic disk substrate whose substrate quality is improved by suppressing a decrease in product yield, with no significant decrease in polishing speed, and with high productivity without significantly increasing the polishing time for rough polishing. An effect can be produced.

  In one or a plurality of embodiments, a magnetic disk substrate manufacturing method and polishing method according to the present invention include a first polishing machine for polishing a substrate to be polished using a polishing liquid composition A as shown in FIG. And a magnetic disk substrate polishing system comprising: a cleaning unit for cleaning the substrate polished by the first polishing machine; and a second polishing machine for polishing the cleaned substrate using the polishing composition B. it can. Therefore, in one aspect, the present invention provides a first polishing machine that polishes a substrate to be polished using the polishing liquid composition A, a cleaning unit that cleans the substrate polished by the first polishing machine, and a polishing liquid composition A polishing system for a magnetic disk substrate comprising a second polishing machine for polishing a substrate after cleaning using the object B, wherein the polishing composition A contains water and silica particles A, and the silica particles A The average absolute length of particles obtained by electron microscope observation is 80 to 500 nm, and the area b of the circle whose diameter is the absolute maximum length is the projected area a of the particles obtained by electron microscope observation. The silica particles whose area ratio (b / a × 100) multiplied by 100 is 110 to 200% is 30% by mass or more based on the total silica particles A, and the polishing composition B is water and Polishing system containing silica particles B About. Regarding the substrate to be polished, the polishing pad used in each polishing machine, the polishing liquid composition A, the silica particles A, the polishing liquid composition B, the silica particles B, the polishing method and conditions, the cleaning composition, and the cleaning method, It can be the same as the above-described method for manufacturing a magnetic disk substrate of the present invention.

  In one or a plurality of embodiments, the polishing system according to the present invention has a waviness of 500 to 5000 μm wavelength (long wavelength waviness) of 3.5 mm (at least one substrate to be polished by the first polishing machine). 0.35 nm) or less, preferably 3.4 mm or less, more preferably 3.2 mm or less, and further preferably 3.0 mm or less. In one or a plurality of embodiments, as shown in FIG. 4, the means determines or executes the end of polishing in the first polishing machine or the shift to the cleaning unit when the value is equal to or less than a predetermined waviness value. When the undulation value is not reached, it is judged or executed whether the first polishing machine is to continue polishing or to stop polishing.

  The present disclosure further relates to one or more of the following embodiments.

  <1> A polishing composition A containing silica particles A and water is supplied to a surface to be polished of a substrate to be polished, a polishing pad is brought into contact with the surface to be polished, and the polishing pad and / or the substrate to be polished is The step of moving and polishing the surface to be polished (1); the step of cleaning the substrate obtained in the step (1) (2); and the polishing composition B containing silica particles B and water in the step (2) (3): supplying the polishing target surface of the substrate obtained in (1) above, bringing the polishing pad into contact with the polishing target surface, and polishing the polishing target surface by moving the polishing pad and / or the substrate to be polished; The steps (1) and (3) are carried out by another polishing machine, and the silica particles A have an average absolute maximum length of particles obtained by electron microscope observation of 80 to 500 nm, and The area b of the circle whose diameter is the absolute maximum length is taken as an electron microscope. The silica particles whose area ratio (b / a × 100) obtained by dividing by 100 the projected area a of the particles obtained by observation and multiplying by 100 (b / a × 100) is 110 to 200% are contained in an amount of 30% by mass or more based on the total silica particles A And manufacturing method of magnetic disk substrate.

<2> The waviness at the wavelength of 500 to 5000 μm is preferably 3.5 mm (0.35 nm) or less, more preferably 3.4 mm or less, still more preferably 3.2 mm or less, even more in the polishing in the step (1). The method for producing a magnetic disk substrate according to <1>, wherein the method is preferably performed to 3.0 mm or less, more preferably 2.7 mm or less, and even more preferably 2.4 mm or less.
<3> The polishing rate reduction rate of the polishing liquid composition A is preferably 15% or less, more preferably 12.0% or less, still more preferably 8.0% or less, and even more preferably 5.0% or less. <1> or <2> The method for producing a magnetic disk substrate according to <1>.
<4> The method for producing a magnetic disk substrate according to any one of <1> to <3>, wherein the polishing liquid composition A does not contain alumina abrasive grains.
<5> The method for producing a magnetic disk substrate according to any one of <1> to <4>, wherein the silica particles A are silica particles produced by a water glass method.
<6> The volume average particle diameter (D50) of silica particles A measured by a laser light scattering method is preferably 50 nm or more, more preferably 60 nm or more, still more preferably 100 nm or more, and even more preferably 110 nm or more, or , Preferably 500 nm or less, more preferably 400 nm or less, even more preferably 300 nm or less, even more preferably 200 nm or less, even more preferably 150 nm or less, or preferably 50 to 500 nm, more preferably 60 to 400 nm, Preferably 100-300 nm, even more preferably 110-200 nm, even more preferably 110-150 nm,
Alternatively, the volume average particle diameter (D50) of the silica particles A is preferably 50 nm or more, more preferably 60 nm or more, still more preferably 100 nm or more, still more preferably 110 nm or more, or preferably 500 nm or less, more preferably Is 400 nm or less, more preferably 300 nm or less, even more preferably 200 nm or less, even more preferably 180 nm or less, or preferably 50 to 500 nm, more preferably 60 to 400 nm, still more preferably 100 to 300 nm, even more Preferably 110-200 nm, even more preferably 110-180 nm,
Alternatively, the average particle diameter (D50) of the silica particles A is preferably 50 nm or more, more preferably 60 nm or more, still more preferably 65 nm or more, or 500 nm or less, more preferably 300 nm or less, still more preferably 73 nm. The method for producing a magnetic disk substrate according to any one of <1> to <5>, which is or preferably 50 to 500 nm, more preferably 60 to 300 nm, and still more preferably 65 to 73 nm.
<7> The average absolute maximum length of the silica particles A is preferably 80 nm or more, more preferably 90 nm or more, still more preferably 100 nm or more, even more preferably 110 nm or more, still more preferably 120 nm or more, or preferably 500 nm or less, more preferably 400 nm or less, even more preferably 300 nm or less, even more preferably 200 nm or less, even more preferably 150 nm or less, or preferably 80 to 500 nm, more preferably 90 to 400 nm, still more preferably 90 ~ 300 nm, even more preferably 90-150 nm,
Alternatively, the average absolute maximum length of the silica particles A is preferably 80 nm or more, more preferably 90 nm or more, even more preferably 100 nm or more, even more preferably 110 nm or more, even more preferably 120 nm or more, or preferably 500 nm or less, more preferably 450 nm or less, further preferably 400 nm or less, even more preferably 380 nm or less, even more preferably 350 nm or less, or preferably 80 to 500 nm, more preferably 90 to 450 nm, still more preferably Is 100-400 nm, even more preferably 110-380 nm, even more preferably 120-350 nm,
Alternatively, the average absolute maximum length of the silica particles A is preferably 80 nm or more, more preferably 83 nm or more, still more preferably 85 nm or more, or preferably 500 nm or less, more preferably 300 nm or less, still more preferably 100 nm. The method for manufacturing a magnetic disk substrate according to any one of <1> to <6>, which is described below, or preferably 80 to 500 nm, more preferably 83 to 300 nm, and still more preferably 85 to 100 nm.
<8> The content of silica particles having an area ratio (b / a × 100) in silica particles A of 110 to 200% is 30% by mass or more, preferably 30 to 100% by mass, more preferably 50 to 100%. The magnetic disk substrate according to any one of <1> to <7>, which is mass%, more preferably 70 to 100 mass%, even more preferably 80 to 100 mass%, and even more preferably 90 to 100 mass%. Manufacturing method.
<9> The average value of the area ratio (b / a × 100) of the silica particles A is 110% or more, or 200% or less, preferably 180% or less, more preferably 150% or less, and even more preferably 140. %, Or 110 to 200%, preferably 110 to 180%, more preferably 110 to 150%, still more preferably 110 to 140%,
Alternatively, the average value of the area ratio (b / a × 100) of the silica particles A is preferably 120 to 200%, more preferably 130 to 200%, and still more preferably 140 to 200%, from <1> to <8> The method for producing a magnetic disk substrate according to any one of 8).
<10> The BET specific surface area of the silica particles A is preferably 10 to 200 m ² / g, more preferably 20 to 100 m ² / g, still more preferably 30 to 80 m ² / g, <1> to <9> A method for producing a magnetic disk substrate according to any one of the above.
<11> The silica particles A include at least one type of silica particles selected from the group consisting of confetti-type silica particles A1, deformed-type silica particles A2, and deformed and confetti-type silica particles A3. > To <10>. A method for manufacturing a magnetic disk substrate according to any one of <10> to <10>.
<12> The ratio (mass ratio) occupied by the total of silica particles A1, A2 and A3 in silica particle A is preferably 50% by mass or more, more preferably 70% by mass or more, further preferably 80% by mass or more, and further The method for producing a magnetic disk substrate according to any one of <1> to <11>, more preferably 90% by mass or more, even more preferably substantially 100% by mass, and even more preferably 100% by mass.
<13> Silica particles A include confetti-type silica particles A1 and irregular-shaped silica particles A2, and the mass ratio of A1 / A2 is preferably 5/95 to 95/5, more preferably 20/80 to 80/20. More preferably 20/80 to 60/40, even more preferably 20/80 to 40/60, even more preferably in the range of 20/80 to 30/70, and the particles in silica particles A The method for producing a magnetic disk substrate according to any one of <1> to <12>, wherein the total amount of A1 and A2 is 80% by mass or more.
<14> The content of silica particles contained in the polishing composition A is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, further preferably 1% by mass or more, and even more preferably 2%. Or more, preferably 30% by mass or less, more preferably 25% by mass or less, further preferably 20% by mass or less, and even more preferably 15% by mass or less, or preferably 0.1% by mass or less. 30% by mass, more preferably 0.5 to 25% by mass, still more preferably 1 to 20% by mass, and even more preferably 2 to 15% by mass, described in any one of <1> to <13> A method of manufacturing a magnetic disk substrate.
<15> The method for producing a magnetic disk substrate according to any one of <1> to <14>, wherein the polishing liquid composition A further contains an acid.
<16> The method for producing a magnetic disk substrate according to any one of <1> to <15>, wherein the polishing liquid composition A further contains an oxidizing agent.
<17> The polishing pad used in the rough polishing step of step (1) is a suede type, non-woven fabric type, polyurethane closed-cell foam type, or a two-layer type polishing pad in which these are laminated, preferably a suede type polishing pad. A method for manufacturing a magnetic disk substrate according to any one of <1> to <16>.
<18> The polishing load in step (1) is preferably 30 kPa or less, more preferably 25 kPa or less, even more preferably 20 kPa or less, even more preferably 18 kPa or less, even more preferably 16 kPa or less, and even more preferably 14 kPa or less. Yes, or preferably 3 kPa or more, more preferably 5 kPa or more, even more preferably 7 kPa or more, even more preferably 8 kPa or more, even more preferably 9 kPa or more, or preferably 3 to 30 kPa, more preferably 5 to 5 kPa. The method for manufacturing a magnetic disk substrate according to any one of <1> to <17>, wherein the pressure is 25 kPa, more preferably 7 to 20 kPa, even more preferably 8 to 18 kPa, 9 to 16 kPa, and even more preferably 9 to 14 kPa. .
<19> The polishing amount per unit area (1 cm ² ) of the substrate to be polished in the step (1) is preferably 0.20 mg or more, more preferably 0.30 mg or more, further preferably 0.40 mg or more, or , Preferably 2.50 mg or less, more preferably 2.00 mg or less, further preferably 1.50 mg or less, or preferably 0.20 to 2.50 mg, more preferably 0.30 to 2.00 mg, The method for producing a magnetic disk substrate according to any one of <1> to <18>, preferably 0.40 to 1.50 mg.
<20> The pH of the cleaning composition in the step (2) is preferably 8 to 13, more preferably 9 to 13, still more preferably 10 to 13, and even more preferably 11 to 13, from <1>. <19> The method for producing a magnetic disk substrate according to any one of <19>.
<21> Any one of <1> to <20>, wherein the volume average particle diameter (D50) of silica particles B measured by a laser light scattering method is smaller than the volume average particle diameter (D50) of silica particles A. A method of manufacturing a magnetic disk substrate according to claim 1.
<22> The average particle diameter (D50) of the silica particles B is preferably 5 to 50 nm, more preferably 10 to 45 nm, still more preferably 15 to 40 nm, and even more preferably 20 to 35 nm, from <1> to <21> The method for manufacturing a magnetic disk substrate according to any one of 21).
<23> The polishing amount per unit area (1 cm ² ) of the substrate to be polished and polishing time per minute in the step (3) is preferably 0.02 mg or more, more preferably 0.03 mg or more, and further preferably 0. 0.04 mg or more, or preferably 0.15 mg or less, more preferably 0.12 mg or less, even more preferably 0.10 mg or less, or preferably 0.02 to 0.15 mg, more preferably 0.00. The method for producing a magnetic disk substrate according to any one of <1> to <22>, which is 03 to 0.12 mg, more preferably 0.04 to 0.10 mg.
<24> The pH of the polishing composition A and / or B is preferably 0.5 to 6.0, more preferably 0.7 to 4.0, still more preferably 0.9 to 3.0, and even more. The method for producing a magnetic disk substrate according to any one of <1> to <23>, preferably 1.0 to 3.0, and more preferably 1.0 to 2.0.
<25> The method for producing a magnetic disk substrate according to any one of <1> to <24>, wherein the substrate to be polished is a Ni-P plated aluminum alloy substrate.
<26> Measuring at least one of the substrate to be polished polished in the step (1) or the substrate after the cleaning in the step (2), measuring the waviness of a wavelength of 500 to 5000 μm, and the waviness is preferably 3 Including performing step (3) when the thickness is not more than 0.5 mm (0.35 nm), more preferably not more than 3.4 mm, still more preferably not more than 3.2 mm, and even more preferably not more than 3.0 mm, <1> To <25>. A method for manufacturing a magnetic disk substrate according to any one of <25>.
<27> A method for polishing a magnetic disk substrate, comprising the steps (1) to (3) according to any one of <1> to <26>.
<28> A polishing liquid composition A containing silica particles A and water is supplied to the surface to be polished of the substrate to be polished, the polishing pad is brought into contact with the surface to be polished, and the polishing pad and / or the substrate to be polished is The step of moving and polishing the surface to be polished (1); the step of cleaning the substrate obtained in the step (1) (2); and the polishing composition B containing silica particles B and water in the step (2) (3): supplying the polishing target surface of the substrate obtained in (1) above, bringing the polishing pad into contact with the polishing target surface, and polishing the polishing target surface by moving the polishing pad and / or the substrate to be polished; Have
The steps (1) and (3) are performed by a separate polishing machine,
The silica particles A have an average absolute maximum length of 80 to 500 nm of particles obtained by observation with an electron microscope, and an area b of a circle whose diameter is the absolute maximum length is obtained by observation with an electron microscope. A method for polishing a magnetic disk substrate, comprising silica particles having an area ratio (b / a × 100) obtained by dividing by a projected area a and multiplying by 100 (b / a × 100) of 110 to 200% based on the total silica particles A .
<29> A first polishing machine that polishes the substrate to be polished using the polishing composition A, a cleaning unit that cleans the substrate polished by the first polishing machine, and after cleaning using the polishing composition B A polishing system for a magnetic disk substrate comprising a second polishing machine for polishing the substrate, wherein the polishing composition A contains water and silica particles A, and the silica particles A are obtained by observation with an electron microscope. The average absolute maximum length of the obtained particles is 80 to 500 nm, and the area b of the circle whose diameter is the absolute maximum length is divided by the projected area a of the particles obtained by electron microscope observation and multiplied by 100. Polishing in which the area ratio (b / a × 100) is 110 to 200% of silica particles is 30% by mass or more based on the total silica particles A, and the polishing composition B contains water and silica particles B A polishing system which is a liquid composition.
<30> The polishing rate reduction rate of the polishing liquid composition A is preferably 15% or less, more preferably 12.0% or more, still more preferably 8.0% or less, and even more preferably 5.0% or less. <29> description.
<31> The polishing system according to <29> or <30>, wherein the polishing liquid composition A does not contain alumina abrasive grains.
<32> The polishing system according to any one of <29> to <31>, wherein the silica particles A are silica particles produced by a water glass method.
<33> The volume average particle diameter (D50) of silica particles A measured by a laser light scattering method is preferably 50 nm or more, more preferably 60 nm or more, still more preferably 100 nm or more, and even more preferably 110 nm or more, or , Preferably 500 nm or less, more preferably 400 nm or less, even more preferably 300 nm or less, even more preferably 200 nm or less, even more preferably 150 nm or less, or preferably 50 to 500 nm, more preferably 60 to 400 nm, Preferably 100-300 nm, even more preferably 110-200 nm, even more preferably 110-150 nm,
Alternatively, the volume average particle diameter (D50) of the silica particles A is preferably 50 nm or more, more preferably 60 nm or more, still more preferably 100 nm or more, still more preferably 110 nm or more, or preferably 500 nm or less, more preferably Is 400 nm or less, more preferably 300 nm or less, even more preferably 200 nm or less, even more preferably 180 nm or less, or preferably 50 to 500 nm, more preferably 60 to 400 nm, still more preferably 100 to 300 nm, even more The polishing system according to any one of <29> to <32>, preferably 110 to 200 nm, and more preferably 110 to 180 nm.
<34> The average absolute maximum length of the silica particles A is preferably 80 nm or more, more preferably 90 nm or more, still more preferably 100 nm or more, even more preferably 110 nm or more, still more preferably 120 nm or more, or preferably 500 nm or less, more preferably 400 nm or less, even more preferably 300 nm or less, even more preferably 200 nm or less, even more preferably 150 nm or less, or preferably 80 to 500 nm, more preferably 90 to 400 nm, still more preferably 90 ~ 300 nm, even more preferably 90-150 nm,
Alternatively, the average absolute maximum length of the silica particles A is preferably 80 nm or more, more preferably 90 nm or more, still more preferably 100 nm or more, even more preferably 110 nm or more, still more preferably 120 nm or more, or preferably 500 nm. Or less, more preferably 450 nm or less, still more preferably 400 nm or less, even more preferably 380 nm or less, even more preferably 350 nm or less, or preferably 80 to 500 nm, more preferably 90 to 450 nm, still more preferably The polishing system according to any one of <29> to <33>, which is 100 to 400 nm, more preferably 110 to 380 nm, and still more preferably 120 to 350 nm.
<35> The content of silica particles having an area ratio (b / a × 100) in silica particles A of 110 to 200% is 30% by mass or more, preferably 30 to 100% by mass, more preferably 50 to 100%. The polishing system according to any one of <29> to <34>, which is mass%, more preferably 70 to 100 mass%, even more preferably 80 to 100 mass%, and even more preferably 90 to 100 mass%.
<36> The average value of the area ratio (b / a × 100) of silica particles A is 110% or more, or 200% or less, preferably 180% or less, more preferably 150% or less, and still more preferably 140%. %, Or 110 to 200%, preferably 110 to 180%, more preferably 110 to 150%, still more preferably 110 to 140%,
Alternatively, the average value of the area ratio (b / a × 100) of the silica particles A is 120 to 200%, preferably 130 to 200%, more preferably 140 to 200%, from <29> to <35> The polishing system according to any one of the above.
<37> The BET specific surface area of the silica particles A is preferably 10 to 200 m ² / g, more preferably 20 to 100 m ² / g, still more preferably 30 to 80 m ² / g, <29> to <36> The polishing system according to any one of the above.
<38> Silica particles A are confetti-type silica particles A1, irregular-shaped silica particles A2, and
The polishing system according to any one of <29> to <37>, comprising at least one type of silica particles selected from the group consisting of irregular and confetti-type silica particles A3.
<39> The ratio (mass ratio) occupied by the total of silica particles A1, A2, and A3 in silica particle A is preferably 50% by mass or more, more preferably 70% by mass or more, further preferably 80% by mass or more, and further The polishing system according to any one of <29> to <38>, more preferably 90% by mass or more, still more preferably substantially 100% by mass, and even more preferably 100% by mass.
<40> The silica particles A include confetti-type silica particles and irregular-type silica particles A2, and the mass ratio of A1 / A2 is preferably 5/95 to 95/5, more preferably 20/80 to 80/20, More preferably 20/80 to 60/40, still more preferably 20/80 to 40/60, and even more preferably in the range of 20/80 to 30/70, and the particle A1 in the silica particle A And the polishing system in any one of <29> to <39> whose total amount of A2 is 80 mass% or more.
<41> The content of silica particles contained in the polishing composition A is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, further preferably 1% by mass or more, and even more preferably 2%. Or more, preferably 30% by mass or less, more preferably 25% by mass or less, further preferably 20% by mass or less, and even more preferably 15% by mass or less, or preferably 0.1% by mass or less. 30% by mass, more preferably 0.5 to 25% by mass, further preferably 1 to 20% by mass, and even more preferably 2 to 15% by mass, described in any one of <29> to <40> Polishing system.
<42> The polishing system according to any one of <29> to <41>, wherein the polishing liquid composition A further contains an acid.
<43> The polishing system according to any one of <29> to <42>, wherein the polishing liquid composition A further contains an oxidizing agent.
<44> Any of <29> to <43>, wherein the volume average particle diameter (D50) of silica particles B measured by a laser light scattering method is smaller than the volume average particle diameter (D50) of silica particles A. A polishing system according to crab.
<45> The average particle diameter (D50) of the silica particles B is preferably 5 to 50 nm, more preferably 10 to 45 nm, still more preferably 15 to 40 nm, and even more preferably 20 to 35 nm, from <29> to <44>. The polishing system according to any one of 44>.
<46> The polishing composition A and / or B preferably has a pH of 0.5 to 6.0, more preferably 0.7 to 4.0, still more preferably 0.9 to 3.0, and even more. The polishing system according to any one of <29> to <45>, preferably 1.0 to 3.0, and more preferably 1.0 to 2.0.
<47> The polishing system according to any one of <29> to <46>, wherein the substrate to be polished is a Ni-P plated aluminum alloy substrate.

  Hereinafter, the present disclosure will be described in more detail by way of examples. However, these examples are illustrative, and the present disclosure is not limited to these examples.

  A polishing composition and a polishing composition B used in the step (1) were prepared as described below, and the substrate to be polished including the steps (1) to (3) was polished under the following conditions. The preparation method of the polishing liquid composition, the additive used, the measurement method of each parameter, the polishing conditions (polishing method) and the evaluation method are as follows.

1. Preparation of polishing liquid composition and polishing liquid composition B used in step (1)
[Preparation of polishing composition used in step (1)]
Silica abrasive grains of Table 1-1 (colloidal silica abrasive grains AK, ai and n; fumed silica abrasive grains jk; alumina abrasive grains lm; mixed abrasive grains op), sulfuric acid, excess The polishing liquid composition used for a process (1) was prepared using hydrogen oxide and water. The content of each component in the polishing composition used in step (1) was 4% by mass of colloidal silica particles, 0.5% by mass of sulfuric acid, and 0.5% by mass of hydrogen peroxide. The polishing composition used in step (1) had a pH of 1.4. In addition, the colloidal silica abrasive in Table 1-1 is manufactured by the water glass method.

The types of silica abrasive grains in Table 1-1 are classifications that can be discriminated by a transmission electron microscope (TEM) observation photograph and analysis using the same in one or a plurality of embodiments.
“Konpeira type silica particles” refers to silica particles having unique ridge-like projections on the surface of spherical particles. In one or a plurality of embodiments, the confetti type silica particles refer to particles having a shape in which two or more particles different in particle size by 5 times or more are aggregated or fused.
“Deformed silica particles” refers to particles having a shape in which two or more particles are aggregated or fused. In one or a plurality of embodiments, the irregular-shaped silica particles refer to particles having a shape in which two or more particles having a particle size of 1.5 times or less are aggregated or fused.
“Oblique and confetti type silica particles” refers to silica particles having a shape intermediate between the confetti type and the variant type and / or characteristics of both the confetti type and the variant type.
“Spherical silica particles” refers to spherical particles (generally commercially available colloidal silica) that are nearly spherical.
“Chain silica particles” refers to beads having a bead shape in which two or more particles having the same particle diameter are two-dimensionally connected in a random manner.
In addition, the said particle size is a particle size calculated | required as a circle equivalent diameter measured within one particle | grain in an electron microscope (TEM) observation image.

  An example of an electron microscope (TEM) observation photograph of the confetti-type colloidal silica abrasive grain A is shown in FIG. 1, and an example of an electron microscope (TEM) observation photograph of the deformed colloidal silica abrasive grain D is shown in FIG.

[Preparation of polishing liquid composition B]
Polishing liquid composition B was prepared using the colloidal silica abrasive grain (abrasive grain q) of the following Table 1-2, sulfuric acid, hydrogen peroxide, and water. The content of each component in the polishing liquid composition B was colloidal silica particles: 5.0% by mass, sulfuric acid: 0.5% by mass, and hydrogen peroxide: 0.5% by mass. The pH of the polishing composition B was 1.4.

2. Measuring method for each parameter [Volume average particle diameter of silica abrasive grains]
Silica abrasive grains were diluted to 1% dispersion with ion-exchanged water, put into the following measuring apparatus, and the average particle diameter was measured.
Measuring equipment: Malvern Zetasizer Nano “Nano S”
Measurement conditions: Sample volume 1.5mL
: Laser He-Ne, 3.0 mW, 633 nm
: Scattered light detection angle 173 °
The particle diameter at which the cumulative volume frequency of the obtained volume distribution particle diameter was 50% was defined as the volume average particle diameter (D50) of the silica particles.

[Method for measuring shape and area ratio of silica abrasive grains]
Silica abrasive grains observed with a transmission electron microscope (TEM) manufactured by JEOL (trade name “JEM-2000FX”, 80 kV, 1 to 50,000 times) are taken as image data with a scanner on a personal computer, and analysis software “WinROOF ( Ver.3.6) ”(Distributor: Mitani Corporation) is used to determine the absolute maximum length of each silica particle for 1000 to 2000 silica particle data, and the average absolute maximum length (average absolute maximum length) Got. The area ratio (b / a × 100) (%) was calculated by dividing the area b of the circle having the absolute maximum length as the diameter by the projected area a of the particles obtained by electron microscope observation and multiplying by 100. Moreover, the ratio with respect to the silica abrasive grain of the particle | grains whose area ratio (b / ax100) is 110-200% was computed. Further, a value obtained by dividing the circle area b of the average absolute maximum length by the average value of the projected area a and multiplying by 100 was calculated as an average area ratio (b / a × 100).

[Measurement of average secondary particle diameter of alumina particles]
A 0.5% poise 530 (manufactured by Kao Corporation) aqueous solution is used as a dispersion medium, and the sample is introduced so that the transmittance is 75 to 95%, followed by ultrasonication for 5 minutes. After application, the particle size was measured.
Measuring equipment: Laser diffraction / scattering type particle size distribution measuring instrument LA920 manufactured by HORIBA, Ltd.
Circulation strength: 4
Ultrasonic intensity: 4

3. Polishing conditions The substrate to be polished including steps (1) to (3) was polished. The conditions for each step are shown below. The step (1) was performed with the same polishing machine, and the step (3) was performed with a polishing machine separate from the polishing machine.
[Polished substrate]
The substrate to be polished was an aluminum alloy substrate plated with Ni-P. The substrate to be polished had a thickness of 1.27 mm and a diameter of 95 mm.

[Step (1): Rough polishing]
Polishing machine: Double-side polishing machine (9B-type double-side polishing machine, manufactured by Speed Fam Co., Ltd.)
Polishing liquid: Polishing liquid composition used in step (1) (shown in Tables 2 and 3)
Polishing pad: Suede type (foam layer: polyurethane elastomer), thickness 1.04mm, average pore diameter 43μm (FILWEL)
Plate rotation speed: 45rpm
Polishing load: 9.8 kPa (set value)
Polishing liquid supply amount: 100 mL / min (0.076 mL / (cm ² · min))
Polishing time: 5 minutes (Examples and Comparative Examples in Table 2-1), 3 to 5 minutes (Examples and Comparative Examples in Table 3)
Polishing amount: 0.1 to 1.6 mg / cm ²
Number of substrates loaded: 10

[Step (2): Cleaning]
The substrate obtained in the step (1) was washed under the following conditions.
1. The substrate obtained in the step (1) is immersed for 5 minutes in a tank containing a pH 12 alkaline detergent composition made of 0.1 mass% KOH aqueous solution.
2. The substrate after immersion is rinsed with ion exchange water for 20 seconds.
3. The rinsed substrate is transferred to a scrub cleaning unit in which a cleaning brush is set and cleaned.

[Step (3): Final polishing]
Polishing machine: Double-side polishing machine (9B type double-side polishing machine, manufactured by Speedfam Co., Ltd.), polishing machine separate from the polishing machine used in step (1): Polishing liquid composition B
Polishing pad: Suede type (foam layer: polyurethane elastomer), thickness 1.0mm, average pore diameter 5μm (manufactured by FILWEL)
Plate rotation speed: 40 rpm
Polishing load: 9.8 kPa
Polishing liquid supply amount: 100 mL / min (0.076 mL / (cm ² · min))
Polishing time: 2 minutes Polishing amount: 0.04 to 0.10 mg / (cm ² · min)
Number of loaded substrates: 10 sheets After the step (3), cleaning was performed. The washing conditions were the same as in the above step (2).

  4). Evaluation method

[Evaluation method of rate of reduction in step (1)]
The polishing rate when the polishing liquid composition used in the step (1) is flowed for 4 minutes is set as a reference speed, and after 4 minutes, the polishing is continued with the supply of the polishing liquid stopped and 1 minute after the supply is stopped. The polishing speed was defined as the post-stop speed, and a value obtained by dividing the difference between the reference speed and the post-stop speed by the reference speed and multiplying by 100 was defined as the polishing speed reduction rate.

[Measuring method of polishing amount in step (1)]
Each substrate before and after polishing was weighed (Sartorius, “BP-210S”) and measured to determine the amount of polishing.
Weight reduction (g) = {weight before polishing (g) −weight after polishing (g)}
Polishing amount (μm) = weight reduction amount (g) / substrate single-sided area (mm ² ) / 2 / Ni—P plating density (g / cm ³ ) × 10 ⁶
(The substrate single-sided area is calculated as 6597 mm ² and Ni-P plating density 8.4 g / cm ³ )

[Method for evaluating protrusion defect after step (3)]
Measuring instrument: OSA7100 (manufactured by KLA Tencor)
Evaluation: Polishing was performed using the polishing composition B, and then 4 pieces were selected at random, and each substrate was irradiated with a laser at 10000 rpm to measure the number of abrasive sticks. The total number of abrasive piercings (pieces) on each of the four substrates was divided by 8 to calculate the number of abrasive piercings (number of protrusion defects) (pieces or relative value) per substrate surface.

[Evaluation method of substrate surface long wavelength waviness after steps (1) and (3)]
Step (1) or (3) Select any two of the 10 substrates after post-polishing, and measure both sides of each selected substrate at 120 ° for 4 points (16 points in total) under the following conditions: did. The average value of the 16 measured values was calculated as the swell of the substrate.
Equipment: Zygo NewView5032
Lens: 2.5x Michelson
Zoom ratio: 0.5
Remove: Cylinder
Filter: FFT Fixed Band Pass, Wave Wavelength: 0.5-5.0mm
Area: 4.33mm x 5.77mm

5. Result Polishing including the polishing step (1) using the polishing composition used in the step (1) where the abrasive grains are abrasive grains A to K was performed under the above polishing conditions (Examples 1 to 11, Table 2). 1). Moreover, the grinding | polishing including the grinding | polishing process (1) using the polishing liquid composition whose abrasive grain is the abrasive grains ap was performed on the said grinding | polishing conditions (Comparative Examples 1-16, Table 2-1). In Comparative Example 15, as the step (1), polishing is performed with the polishing composition used in the step (1) of the abrasive grains m, and then the polishing is further performed in the step (1) of the abrasive grains n with the same polishing machine. Polishing was performed with the liquid composition. These results are shown in Table 2-1.

  As shown in Table 2-1, in Examples 1 to 11, the polishing rate in the step (1) and after the polishing in the step (3) were not greatly impaired as compared with the comparative examples 1 to 16. The substrate surface waviness (long wave waviness) and the protrusion defects of the substrate after the polishing in the step (3) could be reduced.

  Next, polishing was performed in the same manner as in Example 6 except that iron sulfate (0.5% by mass and 1.0% by mass) was added as an additive to the polishing composition used in Example 6 (Table 2-1). And evaluated (Examples 6-2 and 6-3). The results are shown in Table 2-2.

  As shown in Table 2-2, in Examples 6-2 and 6-3 in which an additive (iron sulfate) was added to the polishing composition used in Step (1), compared to Example 6 in which no additive was added, The polishing rate and the polishing amount increased, and long wavelength waviness was suppressed.

  Next, polishing including the polishing step (1) using the polishing composition in which the abrasive grains were abrasive grains D and F was performed under the above polishing conditions except for the polishing time (Examples 12 to 15, Table 3). . The polishing time in the polishing step (1) of Examples 12 to 15 was 4.5, 5, 4 and 3 minutes, respectively. These results are shown in Table 3. In Table 3, Comparative Examples 13, 1, 6, 10, and 16 in Table 2-1 are shown for comparison.

  As shown in Table 3, in Examples 12 to 15, undulation of the substrate surface after the polishing in the step (1) and the step (3) without significantly impairing the polishing rate in the step (1) as compared with the comparative example. (Long wavelength waviness) and protrusion defects of the substrate after polishing in the step (3) could be reduced. Further, in Examples 12 to 14, since the polishing time in the step (1) was longer than that in Example 15, the long wavelength waviness was further reduced.

  The method for producing a magnetic disk of the present invention can be suitably used for producing a magnetic disk substrate having a high recording density, for example.

Claims (13)

(1) A polishing liquid composition A containing silica particles A and water is supplied to a surface to be polished of a substrate to be polished, a polishing pad is brought into contact with the surface to be polished, and the polishing pad and / or the substrate to be polished is Moving and polishing the surface to be polished;
(2) a step of cleaning the substrate obtained in step (1); and
(3) A polishing liquid composition B containing silica particles B and water is supplied to the polishing target surface of the substrate obtained in step (2), and the polishing pad is brought into contact with the polishing target surface, and the polishing pad and / or Or moving the substrate to be polished to polish the surface to be polished;
Have
The steps (1) and (3) are performed by a separate polishing machine,
The silica particles A have an average absolute maximum length of 80 to 500 nm of particles obtained by observation with an electron microscope, and an area b of a circle whose diameter is the absolute maximum length is obtained by observation with an electron microscope. A method for producing a magnetic disk substrate, comprising silica particles having an area ratio (b / a × 100) of 110 to 200%, divided by the projected area a and multiplied by 100, of 30% by mass or more based on the total silica particles A .   The method of manufacturing a magnetic disk substrate according to claim 1, wherein the polishing in the step (1) is performed until the undulation at a wavelength of 500 to 5000 μm is 3.5 mm (0.35 nm) or less. The polishing rate reduction rate of the polishing liquid composition A is 15% or less,
The rate of decrease in the polishing rate is based on the polishing rate when the polishing composition is flowed in the polishing machine for 4 minutes, and the polishing is continued with the supply of the polishing solution stopped after 4 minutes. 3. The magnetic disk substrate according to claim 1, wherein the polishing speed after one minute is a post-stop speed, and a value obtained by dividing the difference between the reference speed and the post-stop speed by the reference speed and multiplying by 100. Production method.   The method for producing a magnetic disk substrate according to claim 1, wherein the polishing liquid composition A does not contain alumina abrasive grains.   The method for producing a magnetic disk substrate according to claim 1, wherein the silica particles A are silica particles produced by a water glass method.   The method for producing a magnetic disk substrate according to any one of claims 1 to 5, wherein the volume average particle diameter (D50) of the silica particles A measured by a laser light scattering method is 50 to 500 nm.   The magnetism according to any one of claims 1 to 6, wherein the volume average particle diameter (D50) of the silica particles B measured by a laser light scattering method is smaller than the volume average particle diameter (D50) of the silica particles A. A manufacturing method of a disk substrate. The silica particles A include the following particles A1 and particles A2, the mass ratio of A1 / A2 is in the range of 5/95 to 95/5, and the total amount of the particles A1 and A2 in the silica particles A is 80% by mass or more. A method of manufacturing a magnetic disk substrate according to claim 1, wherein
A1) Particles obtained by agglomeration and fusion of two or more types of particles having a particle size of 5 times or more A2) Particles obtained by aggregation and fusion of two or more types of particles having a particle size of 1.5 times or less   The method for producing a magnetic disk substrate according to claim 1, wherein the polishing liquid compositions A and B have a pH of 0.5 to 6.0.   The method for manufacturing a magnetic disk substrate according to claim 1, wherein the substrate to be polished is a Ni—P plated aluminum alloy substrate.   Measuring at least one of the substrate to be polished polished in step (1) or the substrate after cleaning in step (2), measuring the undulation with a wavelength of 500 to 5000 μm, and the undulation is 3.5 mm (0. The manufacturing method according to any one of claims 1 to 10, comprising performing the step (3) when the thickness is 35 nm or less. (1) A polishing liquid composition A containing silica particles A and water is supplied to a surface to be polished of a substrate to be polished, a polishing pad is brought into contact with the surface to be polished, and the polishing pad and / or the substrate to be polished is Moving and polishing the surface to be polished;
(2) a step of cleaning the substrate obtained in step (1); and
(3) A polishing liquid composition B containing silica particles B and water is supplied to the polishing target surface of the substrate obtained in step (2), and the polishing pad is brought into contact with the polishing target surface, and the polishing pad and / or Or moving the substrate to be polished to polish the surface to be polished;
Have
The steps (1) and (3) are performed by a separate polishing machine,
The silica particles A have an average absolute maximum length of 80 to 500 nm of particles obtained by observation with an electron microscope, and an area b of a circle whose diameter is the absolute maximum length is obtained by observation with an electron microscope. A method for polishing a magnetic disk substrate, comprising silica particles having an area ratio (b / a × 100) obtained by dividing by a projected area a and multiplying by 100 (b / a × 100) of 110 to 200% based on the total silica particles A . A first polishing machine for polishing a substrate to be polished using the polishing composition A;
A cleaning unit for cleaning the substrate polished by the first polishing machine;
A magnetic disk substrate polishing system comprising: a second polishing machine that polishes the substrate after cleaning with the polishing composition B;
The polishing composition A contains water and silica particles A,
The silica particles A have an average absolute maximum length of 80 to 500 nm of particles obtained by observation with an electron microscope, and an area b of a circle whose diameter is the absolute maximum length is obtained by observation with an electron microscope. Silica particles whose area ratio (b / a × 100) obtained by dividing by the projected area a and multiplying by 100 (b / a × 100) is 110 to 200% are contained in an amount of 30% by mass or more based on the total silica particles A
A polishing system in which the polishing liquid composition B contains water and silica particles B.