JP2014023002A - Sensor device and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the size of a semiconductor sensor, and to enhance sensor sensitivity.SOLUTION: A deep groove is formed in a thickness direction of a substrate such as a semiconductor substrate. A thin plate is stuck to upper surfaces and/or lower surfaces of substrate sidewalls (partition wall) between a plurality of adjacent grooves. When a force amount such as a pressure, an acceleration, an angular velocity and sound waves is applied to the substrate sidewalls (partition wall), the substrate sidewalls (partition wall)(equivalent to diaphragm) between the respective grooves curve, and the capacity of the groove part changes. The force amount such as a pressure, an acceleration, an angular velocity and sound waves can be detected by detecting the amount of the change. The capacity increases by making the grooves deeper, and accordingly a sensor having a small area can be produced. The amount of the change of the substrate sidewalls (partition wall) increases by making the substrate sidewalls (partition wall) thin, and accordingly the sensor sensitivity enhances.

Description

  The present invention relates to a structure of a sensor using a substrate such as a semiconductor and a manufacturing method thereof, and particularly to various small sensors or various small devices such as an acoustic transducer, an acceleration sensor, and a pressure sensor. As a result, it is possible to provide various sensors and various devices such as an acoustic transducer that is cheaper and has higher performance than conventional ones.

  As a pressure sensor using a semiconductor substrate, there is one in which a part of a semiconductor substrate such as a silicon wafer is thinned and covered with a lid. For example, Patent Document 1 discloses a structure in which a recess is formed in a substrate and the recess is covered with a diaphragm. This semiconductor pressure sensor detects pressure by utilizing the fact that the diaphragm is deformed by the external pressure and the capacitance inside the recess is changed.

Patent 2918272 Patent Publication 2002-095093

In a conventional pressure sensor that creates a space (cavity or recess) in a semiconductor substrate and uses the change in capacitance of the space, the space is formed in the lateral direction (planar direction) of the semiconductor substrate. A large area was occupied in the lateral direction (plane direction) of the substrate. FIG. 17 is a diagram schematically showing a conventional pressure sensor. In FIG. 17A, a space 1502 formed on the surface of the chip 1501 in the semiconductor substrate is covered with a lid 1503. The space 1502 is in a vacuum state (or a low pressure state of 1 atm or less). In the space, a lower electrode 1504 formed on the substrate 1501 and an upper electrode 1505 formed on the lid 1503 face each other. The interval between the lower electrode 1504 and the upper electrode 1505 is z. FIG. 17B is a plan view. The lid 1503 is omitted. The planar size of the space is a rectangle of horizontal x and vertical y. Reference numeral 1507 denotes a pressure sensor defined by x and y.

The capacity C of this space composed of the lower electrode and the upper electrode is represented by C = ε * ε0 * S / z. Here, ε is a relative dielectric constant, ε0 is a vacuum dielectric constant, S is an area in the plane direction of the semiconductor substrate, and S = x * y. Ε is about 1 when the space is air. When pressure P is received from the outside, the lid is deformed and bent downward, and z changes. Due to this change in z, the capacitance C changes, and the pressure can be calculated from the amount of change. The larger the amount of change, the easier it is to detect, so the larger the area S, the better. That is, in order to accurately measure the pressure, it is necessary to increase the area, so it is necessary to increase the planar size of this space, that is, x and y. Therefore, the chip size is increased. Since the wafer area is limited, the number of chips (pressure sensor chips) in the wafer is reduced. As a result, the price of the pressure sensor chip is also increased.

FIG. 25 is a diagram showing a conventional microphone using a semiconductor substrate. A conventional microphone 100 shown in FIG. 25 forms a recess 102 in a silicon substrate 101 to form a diaphragm 102, a gap 109, and a back plate 103, and an acoustic hole 104, a lower wiring 105, an upper wiring 106, and a lower pad are formed in the back plate 102. 107, an upper pad 108, and a grounding pad 110 are disposed. As can be seen from FIG. 25, since the diaphragm 102 of the conventional microphone 100 is formed substantially parallel to the substrate surface, the area of the microphone 100 is very large. For example, an area of about 2 mm square is required. (Patent Document 2)

In the present invention, a plurality of deep grooves (recesses) or through grooves are formed in the thickness direction of a planar substrate (for example, a disk shape or a rectangular plate shape), and the side walls sandwiched by adjacent through grooves are pressures on both sides thereof. The present invention relates to a capacitance type sensor that utilizes a change in capacitance due to deformation due to a difference. Specifically, the following measures are taken.

(1) The present invention attaches to a conductor substrate having at least two groove (penetrating groove) spaces penetrating one or both of the upper surface and the lower surface, and the upper surface (first surface) of the conductor substrate. And an insulating substrate (second surface insulating substrate) attached to a lower surface (second surface) of the conductive substrate. Type microphone or force (acceleration, angular velocity, pressure, etc.) sensor,
The conductive substrate that separates two adjacent through grooves (first through groove and second through groove) in the lateral direction (substantially perpendicular to the thickness direction of the conductive substrate) is one electrode (first substrate side wall capacitance). Electrode),
The first substrate side wall capacitor electrode is opposed to one of the adjacent through grooves (first through groove), and the other side wall of the conductive substrate that is not electrically connected to the first substrate side wall capacitor electrode is the other side. Counter electrode (second substrate side wall capacitor electrode), and the first through groove space between the first substrate side wall capacitor electrode and the second substrate side wall capacitor electrode is set as a capacitance space (in the second through groove, the sound wave Alternatively, force (acceleration, angular velocity, pressure, etc.) is introduced) and the first substrate side wall capacitive electrode vibrates and displaces due to the sound wave or force (acceleration, angular velocity, pressure, etc.). It is characterized by detecting sound waves or force (acceleration, angular velocity, pressure, etc.) using a change in capacitance of space, and the upper surface of the first substrate side wall capacitor electrode is a first surface insulator substrate. Adhere to and / or The lower surface of the second substrate side wall capacitor electrode is attached to the second surface insulator substrate and / or the upper surface of the second substrate side wall capacitor electrode is adhered to the first surface insulator substrate, and / or the lower surface thereof is the second surface insulator. A capacitive microphone or a force (acceleration, angular velocity, pressure, etc.) sensor characterized by being attached to a substrate.

(2) The present invention provides a main substrate having at least two groove (penetrating groove) spaces penetrating one or both of the upper surface and the lower surface, and a thin plate attached to the upper surface (first surface) of the main substrate. Capacitance type microphone or force quantity (acceleration, angular velocity, and the like), characterized by comprising a substrate (first surface thin plate) and a thin substrate (second surface thin plate) attached to the lower surface (second surface) of the main substrate Or pressure etc.) sensor,
Conductivity formed on the main substrate side wall (first substrate side wall) that separates two adjacent through grooves (first through groove and second through groove) in the lateral direction (substantially perpendicular to the thickness direction of the main substrate). The body film is one electrode (first substrate side wall capacitor electrode),
A main substrate side wall (second substrate side wall) that faces the first side wall capacitor electrode across one of the adjacent through grooves (first through groove) and is not electrically connected to the first side wall capacitor electrode. The conductive film formed above is used as the other counter electrode (second substrate side wall capacitor electrode), and the first through-groove space between these first substrate side wall capacitor electrode and second substrate side wall capacitor electrode is the capacitance space. age,
The first substrate side wall capacitive electrode is oscillated and displaced by sound waves or force (acceleration, angular velocity, pressure, etc.) to change the capacitance of the first through-groove space, thereby using sound waves or force (acceleration, The first substrate side wall capacitor electrode has an upper surface attached to the first surface insulator substrate and / or a lower surface attached to the second surface insulator substrate. And / or the second substrate side wall capacitor electrode has an upper surface attached to the first surface insulator substrate and / or a lower surface attached to the second surface insulator substrate. A capacitive microphone or a force (acceleration, angular velocity, pressure, etc.) sensor.

(3) In the present invention, in addition to (1) or (2), the thickness of the conductor substrate or the main substrate is 2.0 mm or less, preferably 1.0 mm or less. Alternatively, the thickness of the first surface thin plate is 1.0 mm or less, preferably 0.5 mm or less, and the thickness of the second surface insulator substrate or the second surface thin plate is 1.0 mm or less. .

(4) In addition to (2) or (3), the present invention is characterized in that the main substrate is a semiconductor substrate or an insulator substrate, and the first surface thin plate and / or the second surface thin plate is an insulator substrate. It is characterized by being.

(5) In addition to the above, in the present invention, the second through groove has a substantially rectangular column shape in cross section, and four through grooves adjacent to the four side surfaces of the second through groove are arranged. The two through grooves have a substantially rectangular column shape in cross section, and one of the four through grooves is the first through groove, and the remaining through grooves are the third through groove, the fourth through groove, and the first through groove. 5 through-grooves
The conductive substrate separating the third through-groove and the second through-groove is used as one electrode (3-1 substrate side wall capacitor electrode), and is opposed to the 3-1 substrate side wall capacitor electrode with the third through groove interposed therebetween, The side wall of the conductive substrate that is not electrically connected to the 3-1 substrate side wall capacitor electrode is used as the other counter electrode (third-2 substrate side wall capacitor electrode). The third through groove space between the two substrate side wall capacitor electrodes is defined as a capacitance space,
The conductor substrate that separates the fourth through-groove and the second through-groove is used as one electrode (4-1 substrate side wall capacitor electrode), and is opposed to the 4-1 substrate side wall capacitor electrode across the fourth through groove, The side wall of the conductor substrate that is not electrically connected to the 4-1 substrate side wall capacitor electrode is used as the other counter electrode (4-2 substrate side wall capacitor electrode). The fourth through groove space between the two substrate side wall capacitor electrodes is defined as a capacitance space,
The conductor substrate that separates the fifth through-groove and the second through-groove is used as one electrode (5-1 substrate side wall capacitor electrode), and is opposed to the 5-1 substrate side wall capacitor electrode across the fifth through groove, The side wall of the conductor substrate that is not electrically connected to the 5-1 substrate side wall capacitor electrode is used as the other counter electrode (5-2 substrate side wall capacitor electrode). The fourth through groove space between the two substrate side wall capacitor electrodes is defined as a capacitance space,
(Sound wave or force (acceleration, angular velocity, pressure, etc.) is introduced into the second through groove) The 3-1 substrate side wall capacitor electrode, the 4-1 substrate side wall capacitor electrode, and the 5-1 substrate side wall Capacitance of the third through-groove space, the fourth through-groove space, and the fifth through-groove space when the capacitive electrode is vibrated and displaced by the sound wave or force (acceleration, angular velocity, pressure, etc.). Is used to detect a sound wave or an amount of force (acceleration, angular velocity, pressure, etc.), and further, a 3-1 substrate side wall capacitive electrode, a 4-1 substrate side wall capacitive electrode, and a fifth The one-substrate side wall capacitor electrode has an upper surface attached to the first surface insulator substrate and / or a lower surface attached to the second surface insulator substrate, and / or a third to second substrate side wall capacitor electrode, 4-2 Substrate side wall capacitance electricity And the 5-2 substrate side wall capacitive electrode has an upper surface attached to the first surface insulator substrate and / or a lower surface attached to the second surface insulator substrate. Capacitive microphone or force (acceleration, angular velocity, pressure, etc.) sensor.

(6) In the present invention, in (5), the first through groove, the third through groove, the fourth through groove, and the fifth through groove are connected, and the first substrate side wall capacitor electrode and the 3-1 substrate The sidewall capacitor electrode, the 4-1 substrate sidewall capacitor electrode, and the 5-1 substrate sidewall capacitor electrode are connected, and further the second substrate sidewall capacitor electrode, the 3-2 substrate sidewall capacitor electrode, and the 4-2 substrate. The sidewall capacitor electrode and the 5-2 substrate sidewall capacitor electrode are connected.

(7) In addition to the above, according to the present invention, in the case where the second through groove is covered by the first insulator substrate or the second insulator substrate, the first insulator substrate and / or the second insulator substrate is subjected to sound waves. Or, there must be a sound wave or force (such as acceleration, angular velocity, or pressure) introduction hole and / or a sound wave or force (acceleration, angular velocity, or pressure) introduction hole for introduction of force (acceleration, angular velocity, or pressure). Features.

(8) In addition to the above, the present invention provides an electrode / wiring and a first substrate formed on the first surface insulator substrate through contact holes formed in the first surface insulator substrate attached to the upper surface of the first substrate side wall. The electrode / wiring formed on the first surface insulator substrate through the contact hole formed in the first surface insulator substrate attached to the upper surface of the second substrate side wall and the second substrate side wall are electrically connected to the side wall. It is electrically connected and has a through groove (second through groove) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is an n-square shape, where n is 3 The plurality of second substrate side walls corresponding to each side surface, and the plurality of second substrate side walls are not electrically connected to each other, and sound waves or force (acceleration, Angular velocity, pressure, etc.) or by the first substrate sidewall. It has an enclosed through groove (second through groove), and at least a part of the outer cross-sectional shape of the first substrate side wall is a curved shape, and the inner cross-sectional shape of the second substrate side wall is the outer cross section of the first substrate side wall. Or a through groove (second through groove) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is a circular shape or an elliptical shape. The inner cross-sectional shape of the first substrate is similar to the outer cross-sectional shape of the first substrate side wall.

(9) The present invention has a third substrate sidewall that surrounds the first substrate sidewall and the second substrate sidewall, the upper surface of the third substrate sidewall is attached to the first surface insulator substrate, and the lower surface of the third substrate sidewall is The third substrate side wall adheres to the second surface insulator substrate, and the third substrate side wall is not electrically connected to one or both of the first substrate side wall and the second substrate side wall, and the third substrate side wall is a capacitive microphone. Or the force (acceleration, angular velocity, pressure, etc.) is the outer side surface of the sensor device chip package, and the first surface insulator substrate is a capacitive microphone or force (acceleration, angular velocity, pressure, etc.) sensor device chip package. The upper surface or the lower surface, and the second surface insulator substrate is the lower surface or the upper surface of the capacitive microphone or the chip package of the force sensor (acceleration, angular velocity, pressure, etc.). And wherein the are.

(10) The present invention provides a main substrate having at least two grooves (through grooves or through holes) penetrating the upper surface and the lower surface, and a thin plate substrate (first surface thin plate) attached to the upper surface (first surface) of the main substrate. ) And a thin plate substrate (second surface thin plate) attached to the lower surface (second surface) of the main substrate, and a capacitance type microphone or a force (acceleration, angular velocity, pressure, etc.) sensor There,
On the main substrate side wall (first substrate side wall) (side surface) that separates two adjacent through grooves (first through groove and second through groove) in the lateral direction (substantially perpendicular to the thickness direction of the main substrate) The conductive film formed on the electrode is one electrode (first substrate side wall capacitor electrode),
A main substrate side wall (second substrate) that faces the first substrate side wall capacitor electrode across one of the adjacent through grooves (first through groove) and is not electrically connected to the first substrate side wall capacitor electrode. The conductive film formed on the side surface of the side wall is used as the other counter electrode (second substrate side wall capacitor electrode), and a first through groove space between the first substrate side wall capacitor electrode and the second substrate side wall capacitor electrode is formed. Capacitance space,
The first substrate side wall capacitive electrode is oscillated and displaced by sound waves or force (acceleration, angular velocity, pressure, etc.) to change the capacitance of the first through-groove space, thereby using sound waves or force (acceleration, The first substrate side wall is attached to the first surface thin plate, the lower surface is attached to the second surface thin plate, and / or the second substrate side wall. The substrate side wall has an upper surface attached to the first surface thin plate, and a lower surface attached to the second surface thin plate,
A capacitive microphone or a force (acceleration, angular velocity, pressure, etc.) sensor.

(11) In the present invention, in addition to the above, the main substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof, and further, the first thin plate is an insulator substrate, and / or Alternatively, the second surface thin plate is an insulator substrate, and the thickness of the main substrate is 2.0 mm or less, preferably 1.0 mm or less, and the thickness of the first surface first surface thin plate is 1.0 mm or less. Preferably, it is 0.5 mm or less, the thickness of the second thin plate is 1.0 mm or less, and further through a contact hole formed in the first surface insulator substrate attached to the upper surface of the first substrate side wall. Electrically connecting electrodes / wirings formed on the first surface insulator substrate and the first substrate side wall;
The electrode / wiring formed on the first surface insulator substrate is electrically connected to the second substrate side wall through a contact hole formed in the first surface insulator substrate attached to the upper surface of the second substrate side wall. To do.

(12) In addition to the above, the present invention has a through groove (second through groove) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is an n-square shape, where n Is an integer of 3 or more, and has a plurality of second substrate side walls corresponding to each side surface, the plurality of second substrate side walls are not electrically connected to each other, and a sound wave or force ( Acceleration, angular velocity, pressure, etc.), or has a through groove (second through groove) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is at least one part. Is a curved shape, and the inner cross-sectional shape of the second substrate side wall is similar to the outer cross-sectional shape of the first substrate side wall, or has a through groove (second through groove) surrounded by the first substrate side wall. The outer cross-sectional shape of the first substrate side wall is circular or elliptical. There, the inner cross-sectional shape of the second substrate sidewall is characterized by a shape similar to the outer cross-sectional shape of the first substrate sidewall.

(13) In addition to the above, the present invention has a third substrate side wall surrounding the first substrate side wall and the second substrate side wall, and the upper surface of the third substrate side wall adheres to the first surface insulator substrate, The lower surface of the substrate side wall is attached to the second surface insulator substrate, the third substrate side wall is not electrically connected to one or both of the first substrate side wall and the second substrate side wall, and the third substrate side wall is Capacitance microphone or force (acceleration, angular velocity, pressure, etc.) sensor device becomes the outer side surface of the chip package, and the first insulating substrate is a capacitance microphone or force (acceleration, angular velocity, pressure, etc.) sensor It becomes the upper or lower surface of the chip package of the device, and the second surface insulating substrate is a capacitive microphone or force (acceleration, angular velocity, pressure, etc.) under the chip package of the sensor device Or characterized in that it is the upper surface.

(14) The present invention provides at least two adjacent recesses (first recesses) that open on the first surface (front surface or top surface) of the main substrate and do not open on the second surface (back surface or bottom surface) opposite to the first surface. A capacitive microphone having a thin plate substrate attached to the upper surface (first surface) of the main substrate, or a force (acceleration, angular velocity, pressure, etc.) sensor,
A conductive film formed on the side wall of the main substrate (side surface of the first substrate) that separates two adjacent concave portions in the horizontal direction (substantially perpendicular to the thickness direction of the main substrate) is formed on one electrode (first side). 1 substrate side wall capacitive electrode)
A main substrate side wall (second substrate side wall) that faces the first substrate side wall capacitor electrode across one of the adjacent recesses (first recess) and is not electrically connected to the first substrate side wall capacitor electrode. The conductive film formed on the side surface of the first electrode is used as the other counter electrode (second substrate side wall capacitor electrode), and the first recess space between the first substrate side wall capacitor electrode and the second substrate side wall capacitor electrode is electrostatic capacitance. Space,
The first substrate side wall capacitive electrode vibrates and displaces due to sound waves or force (acceleration, angular velocity, pressure, etc.), and changes in the capacitance of the first recess space make use of sound waves or force (acceleration, angular velocity). , Or pressure, etc.)
Further, the upper surface of the first substrate side wall is attached to the thin plate substrate, and / or the upper surface of the second substrate side wall is attached to the thin plate substrate,
A capacitive microphone or a force (acceleration, angular velocity, pressure, etc.) sensor.

(15) In the present invention, in addition to the above, the main substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof, and the thickness of the main substrate is 2.0 mm or less, which is preferable. Is 1.0 mm or less, the thickness of the first surface thin plate is 1.0 mm or less, preferably 0.5 mm or less, and the thickness of the second surface thin plate is 1.0 mm or less, Furthermore, the electrode / wiring formed on the first surface insulator substrate is electrically connected to the first substrate side wall through a contact hole formed in the first surface insulator substrate attached to the upper surface of the first substrate sidewall,
The electrode / wiring formed on the first surface insulator substrate is electrically connected to the second substrate side wall through a contact hole formed in the first surface insulator substrate attached to the upper surface of the second substrate side wall. To do.

(16) In addition to the above, the present invention has a through groove (second through groove) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is an n-square shape, where n Is an integer of 3 or more, and has a plurality of second substrate side walls corresponding to each side surface, the plurality of second substrate side walls are not electrically connected to each other, and a sound wave or force ( Acceleration, angular velocity, pressure, etc.) or a through groove (second through groove) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is at least one part. Is a curved shape, and the inner cross-sectional shape of the second substrate side wall is similar to the outer cross-sectional shape of the first substrate side wall, or a through groove (second through-hole) surrounded by the first substrate side wall The outer cross-sectional shape of the first substrate side wall is circular or An elliptical shape, the inner cross-sectional shape of the second substrate sidewall is characterized by a shape similar to the outer cross-sectional shape of the first substrate sidewall.

(17) In addition to the above, the present invention includes a third substrate side wall surrounding the first substrate side wall and the second substrate side wall, and the upper surface of the third substrate side wall is attached to the first surface insulator substrate, The lower surface of the substrate side wall is attached to the second surface insulator substrate, the third substrate side wall is not electrically connected to one or both of the first substrate side wall and the second substrate side wall, and the third substrate side wall is Capacitance microphone or force (acceleration, angular velocity, pressure, etc.) sensor device becomes the outer side surface of the chip package, and the first insulating substrate is a capacitance microphone or force (acceleration, angular velocity, pressure, etc.) sensor It becomes the upper or lower surface of the chip package of the device, and the second surface insulating substrate is a capacitive microphone or force (acceleration, angular velocity, pressure, etc.) under the chip package of the sensor device Or characterized in that it is the upper surface.

(18) The present invention provides a thin plate substrate having at least two adjacent recesses (first recess and second recess) opened on the upper surface of an insulating polymer formed on the main substrate, and attached to the upper surface of the main substrate. A capacitive microphone or a force (acceleration, angular velocity, pressure, etc.) sensor having
A conductor film formed on the substrate side wall (side surface of the first substrate) of the insulating polymer that separates two adjacent concave portions in the lateral direction (substantially perpendicular to the thickness direction of the insulating polymer) Electrode (first substrate side wall capacitor electrode),
An insulating polymer substrate sidewall (second) that faces the first substrate sidewall capacitor electrode across one of the adjacent recesses (first recess) and is not electrically connected to the first substrate sidewall capacitor electrode. The conductive film formed on the side surface of the substrate side wall is used as the other counter electrode (second substrate side wall capacitor electrode), and the first recess space between the first substrate side wall capacitor electrode and the second substrate side wall capacitor electrode is defined as Capacitance space,
The first substrate side wall capacitive electrode vibrates and displaces due to sound waves or force (acceleration, angular velocity, pressure, etc.), and changes in the capacitance of the first recess space make use of sound waves or force (acceleration, angular velocity). , Or pressure, etc.)
Further, the upper surface of the first substrate side wall is attached to the thin plate substrate, and / or the upper surface of the second substrate side wall is attached to the thin plate substrate,
A capacitive microphone or a force (acceleration, angular velocity, pressure, etc.) sensor.

(19) In the present invention, in addition to the above, the main substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof, and further, the thin plate substrate is a conductor substrate, a semiconductor substrate, or an insulator. A substrate or a composite substrate thereof, and the thickness of the main substrate is 2.0 mm or less, preferably 1.0 mm or less, and the thickness of the thin plate substrate is 1.0 mm or less, preferably 0. Further, the thickness of the insulating polymer is 1.0 mm or less, and preferably 0.5 mm or less.

(20) In addition to the above, according to the present invention, the electrodes / wirings formed on the thin plate substrate through the contact holes formed in the thin plate substrate attached to the upper surface of the first substrate side wall and the first surface formed on the upper surface of the first substrate side wall. Connected to the upper surface conductor film wiring, and the first upper surface conductor film wiring is electrically connected to the first substrate side wall capacitor electrode;
The electrode / wiring formed on the thin plate substrate and the second upper surface conductor film wiring formed on the upper surface of the second substrate side wall are connected through contact holes formed on the thin plate substrate attached to the upper surface of the second substrate side wall, and The second upper surface conductive film wiring is electrically connected to the second substrate sidewall capacitor electrode, and further has a recess (second recess) surrounded by the first substrate sidewall, The outer cross-sectional shape of this is an n-square shape, where n is an integer greater than or equal to 3, has a plurality of second substrate side walls corresponding to each side surface, and the plurality of second substrate side walls are electrically connected to each other. And is characterized by introducing sound waves or force (acceleration, angular velocity, pressure, etc.) into the second recess, or having a recess (second recess) surrounded by the first substrate side wall, The outer cross-sectional shape of one substrate side wall is at least 1 Is a curved shape, the inner cross-sectional shape of the second substrate side wall is similar to the outer cross-sectional shape of the first substrate side wall, and a sound wave or force (acceleration, angular velocity, pressure, etc.) is introduced into the second recess. Or a through groove (second through groove) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is a circular shape or an elliptical shape.

(21) In addition to the above, the present invention has a third substrate side wall surrounding the first substrate side wall and the second substrate side wall, the upper surface of the third substrate side wall is attached to the thin plate substrate, and the third substrate side wall is the first side wall. The third substrate side wall is not electrically connected to one or both of the first substrate side wall and the second substrate side wall, and the third substrate side wall is a capacitive microphone or a force package (acceleration, angular velocity, pressure, etc.) sensor device chip package The thin plate substrate is the upper surface or the lower surface of the capacitive microphone or the chip package of the force sensor (acceleration, angular velocity, pressure, etc.) sensor device, and the main substrate is a semiconductor substrate. In addition, an insulating polymer is formed in a recess (main recess) formed in the main substrate, and the recess is formed by an imprint method. .

(22) The present invention provides a thin plate substrate having at least two adjacent concave portions (first concave portion and second concave portion) opened on the upper surface of the conductive polymer formed on the main substrate, and attached to the upper surface of the main substrate. A capacitive microphone or a force (acceleration, angular velocity, pressure, etc.) sensor having
A conductive polymer substrate side wall (first substrate side wall) (side surface thereof) separating two adjacent concave portions in the lateral direction (a direction substantially perpendicular to the thickness direction of the conductive polymer) is one electrode (first substrate side wall). Capacitive electrode)
A substrate side wall (second layer) of a conductive polymer that faces the first substrate side wall capacitor electrode across one of the adjacent recesses (first recess) and is not electrically conductive with the first substrate side wall capacitor electrode. (Side wall of the substrate) is used as the other counter electrode (second substrate side wall capacitor electrode), and the first recess space between the first substrate side wall capacitor electrode and the second substrate side wall capacitor electrode is used as the capacitance space. ,
The first substrate side wall capacitive electrode vibrates and displaces due to sound waves or force (acceleration, angular velocity, pressure, etc.), and changes in the capacitance of the first recess space make use of sound waves or force (acceleration, angular velocity). , Or pressure, etc.)
Further, the upper surface of the first substrate side wall is attached to the thin plate substrate, and / or the upper surface of the second substrate side wall is attached to the thin plate substrate,
A capacitive microphone or a force (acceleration, angular velocity, pressure, etc.) sensor.

(23) In addition to the above, in the present invention, the main substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof, and further, the thin plate substrate is a conductor substrate, a semiconductor substrate, or an insulator. A substrate or a composite substrate thereof, the thickness of the main substrate is 2.0 mm or less, preferably 1.0 mm or less, and the thickness of the thin plate substrate is 1.0 mm or less, preferably 0.5 mm Further, the thickness of the conductive polymer is 1.0 mm or less, preferably 0.5 mm or less.

(24) In addition to the above, the present invention connects the electrode / wiring formed on the thin substrate through the contact hole formed on the thin substrate attached to the upper surface of the first substrate sidewall and the upper surface of the first substrate sidewall,
The electrode / wiring formed on the thin plate substrate is connected to the upper surface of the second substrate side wall through a contact hole formed on the thin plate substrate attached to the upper surface of the second substrate side wall, and the recess is surrounded by the first substrate side wall (Second concave portion), the outer cross-sectional shape of the first substrate side wall is an n-gonal shape, where n is an integer of 3 or more, and has a plurality of second substrate side walls corresponding to each side surface, The plurality of second substrate side walls are not electrically connected to each other, and a sound wave or force (acceleration, angular velocity, pressure, etc.) is introduced into the second recess, or is surrounded by the first substrate side walls. And at least one part of the outer cross-sectional shape of the first substrate side wall is curved, and the inner cross-sectional shape of the second substrate side wall is similar to the outer cross-sectional shape of the first substrate side wall. Shape, and the sound wave or Introducing force (acceleration, angular velocity, pressure, etc.), having a through groove (second through groove) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is circular or It has an elliptical shape.

(25) In addition to the above, the present invention has a third substrate side wall surrounding the first substrate side wall and the second substrate side wall, the upper surface of the third substrate side wall is attached to the thin plate substrate, and the third substrate side wall is the first side wall. The third substrate side wall is not electrically connected to one or both of the first substrate side wall and the second substrate side wall, and the third substrate side wall is a capacitive microphone or a force package (acceleration, angular velocity, pressure, etc.) sensor device chip package The thin plate substrate is the upper surface or lower surface of the capacitive microphone or the chip package of the force sensor (acceleration, angular velocity, pressure, etc.) sensor device, and the recess is imprinted It is formed.

(26) The present invention provides a bonded substrate in which a conductor substrate and a low concentration substrate are bonded, and the bonded substrate has at least two adjacent recesses (first recess and second recess) opened on the surface on the conductor substrate side. Have
The recess is formed in a direction substantially perpendicular to the surface of the bonding substrate (± 10 degrees or less, preferably ± 5 degrees or less, optimally ± 1 degree or less with respect to the direction perpendicular to the surface),
The bottom of the recess exists on the low concentration substrate side beyond the junction of the conductor substrate and the low concentration substrate,
A capacitive microphone having a thin plate attached to the upper surface of the bonding substrate or a force (acceleration, angular velocity, pressure, etc.) sensor,
A bonding substrate side wall (first substrate side wall) (side surface thereof) separating two adjacent concave portions in the lateral direction (substantially perpendicular to the thickness direction of the bonding substrate) is defined as one electrode (first substrate side wall capacitor electrode). ,
A junction substrate side wall (second substrate side wall) that faces the first substrate side wall capacitor electrode across one of the adjacent recesses (first recess) and is not electrically connected to the first substrate side wall capacitor electrode. (Side surface) is the other counter electrode (second substrate sidewall capacitor electrode), and the first recess space between the first substrate sidewall capacitor electrode and the second substrate sidewall capacitor electrode is the capacitance space,
The first substrate side wall capacitive electrode vibrates and displaces due to sound waves or force (acceleration, angular velocity, pressure, etc.), and changes in the capacitance of the first recess space make use of sound waves or force (acceleration, angular velocity). , Or pressure, etc.)
Furthermore, the upper surface of the first substrate side wall is attached to the thin plate substrate, and / or the upper surface of the second substrate side wall is attached to the thin plate substrate,
A capacitive microphone or a force (acceleration, angular velocity, pressure, etc.) sensor.

(27) In the present invention, in addition to the above, the conductor substrate is a high concentration silicon semiconductor substrate (impurity concentration is 10 ¹⁹ / cm ³ or more), and the low concentration semiconductor substrate is a low concentration silicon semiconductor substrate (impurity concentration). 10 ¹⁷ / cm ³ or less), the conductor type of the high-concentration silicon semiconductor substrate and the conductor type of the low-concentration silicon semiconductor substrate are opposite, and the junction substrate is an epitaxial substrate, The silicon semiconductor substrate is an epitaxial layer formed by epitaxial growth on a high concentration silicon semiconductor substrate.

(28) According to the present invention, in the bonded substrate in which the bonded conductor substrate and the low concentration substrate are bonded, an insulator film is interposed between the conductive substrate and the low concentration substrate, and the bonded substrate is on the conductor substrate side. Having at least two adjacent recesses (first recess and second recess) opened on the surface of
The recess is formed in a direction substantially perpendicular to the surface of the bonding substrate (± 10 degrees or less, preferably ± 5 degrees or less, optimally ± 1 degree or less with respect to the direction perpendicular to the surface),
The bottom of the recess exists on the insulator film or low concentration substrate side beyond the conductor substrate,
A capacitive microphone having a thin plate attached to the upper surface of the bonding substrate or a force (acceleration, angular velocity, pressure, etc.) sensor,
A bonding substrate side wall (first substrate side wall) that separates two adjacent concave portions in the lateral direction (substantially perpendicular to the thickness direction of the bonding substrate) is defined as one electrode (first substrate side wall capacitor electrode). ,
A junction substrate side wall (second substrate side wall) that faces the first substrate side wall capacitor electrode across one of the adjacent recesses (first recess) and is not electrically connected to the first substrate side wall capacitor electrode. (Side surface) is the other counter electrode (second substrate sidewall capacitor electrode), and the first recess space between the first substrate sidewall capacitor electrode and the second substrate sidewall capacitor electrode is the capacitance space,
The first substrate side wall capacitive electrode vibrates and displaces due to sound waves or force (acceleration, angular velocity, pressure, etc.), and changes in the capacitance of the first recess space make use of sound waves or force (acceleration, angular velocity). , Or pressure, etc.)
Furthermore, the upper surface of the first substrate side wall is attached to the thin plate substrate, and / or the upper surface of the second substrate side wall is attached to the thin plate substrate,
A capacitive microphone or a force (acceleration, angular velocity, pressure, etc.) sensor.

(29) In addition to the above, in the present invention, the thickness of the bonding substrate is 2.0 mm or less, preferably 1.0 mm or less, and the thickness of the thin plate substrate is 1.0 mm or less, preferably 0. The thickness of the conductor substrate is 1.0 mm or less, and preferably 0.5 mm or less, and the thin plate is formed through the contact hole formed in the thin plate substrate attached to the upper surface of the first substrate side wall. Connect the electrodes and wirings formed on the substrate to the upper surface of the first substrate side wall,
The electrode / wiring formed on the thin plate substrate is connected to the upper surface of the second substrate side wall through contact holes formed in the thin plate substrate attached to the upper surface of the second substrate side wall.

(30) In addition to the above, the present invention has a recess (second recess) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is an n-gonal shape, where n is 3 The plurality of second substrate side walls corresponding to the respective side surfaces are provided, the plurality of second substrate side walls are not electrically connected to each other, and sound waves or force (acceleration, angular velocity) are supplied to the second recess. Or a pressure or the like, or has a concave portion (second concave portion) surrounded by the first substrate side wall, and at least one part of the outer cross-sectional shape of the first substrate side wall is a curved shape. The inner cross-sectional shape of the second substrate side wall is similar to the outer cross-sectional shape of the first substrate side wall, and a sound wave or force (acceleration, angular velocity, pressure, etc.) is introduced into the second recess, or A through-groove surrounded by the first substrate side wall A second recess), the outer cross-sectional shape of the first substrate sidewall is characterized by a circular shape or an elliptical shape.
(31) In addition to the above, the present invention has a third substrate side wall surrounding the first substrate side wall and the second substrate side wall, the upper surface of the third substrate side wall is attached to the thin plate substrate, and the third substrate side wall is the first side wall. The third substrate side wall is not electrically connected to one or both of the first substrate side wall and the second substrate side wall, and the third substrate side wall is a capacitive microphone or a force package (acceleration, angular velocity, pressure, etc.) sensor device chip package The thin plate substrate is an upper surface or a lower surface of a capacitive microphone or a chip package of a force sensor (acceleration, angular velocity, pressure, etc.) sensor device.

(32) The present invention provides a recess or a through-hole formed from the first surface (front surface) to the second surface (back surface) of the substrate and substantially perpendicular to the substrate surface (first surface and second surface). It is an electric double layer capacitor characterized in that two opposing side surfaces of the recess or the through hole are electrodes (counter electrodes), and an electrolyte is provided in the recess or the through hole between the counter electrodes. An electric double layer capacitor characterized by using a recess or a through hole formed from the first surface (front surface) to the second surface (back surface) of the substrate. An electric double layer capacitor comprising a protruding counter electrode inserted into the recess or the through hole and an electrolyte between the counter electrode in the inserted recess or the through hole, and a substrate The first of An electric double layer capacitor using a recess or a through-hole formed from a (front surface) to a second surface (back surface) and substantially perpendicular to a substrate surface (first surface and second surface). An electric double layer capacitor having a substrate side wall formed between adjacent recesses and another substrate side wall opposite to the substrate side wall in at least one of the recesses or through holes as a counter electrode. An electric double layer capacitor having an electrolyte in the recess or through hole between the opposing substrate side wall electrodes.
(33) According to the present invention, a recess or a through hole is formed substantially perpendicular to the substrate surface (first surface and second surface) from the first surface (front surface) to the second surface (back surface) of the piezoelectric substrate. A micro-generator using holes, wherein two electrodes are conductive film / electrodes formed on both side surfaces of a substrate side wall formed by adjacent recesses, and the substrate side wall is deformed to deform the substrate Electricity generated on both side surfaces of the side wall is collected by the conductive film / electrode to generate electric power, or the substrate surface (first surface) is directed from the first surface (front surface) to the second surface (back surface). A micro-generator using a recess or a through-hole formed substantially perpendicular to the first and second surfaces), wherein the first conductor film is formed on the side surface of the substrate side wall formed by the adjacent recess. Form a piezoelectric film on it and a second conductor film on it The electric charges generated on both surfaces of the piezoelectric film due to the deformation of the substrate side wall are collected by the first conductor film and / or the second conductor film to generate electric power, or formed in the substrate. A micro-generator using recesses (inside polymer recesses) formed in a piezoelectric polymer filled in the recesses, on both sides of a polymer substrate side wall formed by adjacent recesses in the polymer The formed conductive film / electrode is two electrodes, and the electric charges generated on both side surfaces of the polymer substrate side wall due to deformation of the polymer substrate side wall are collected by the conductive film / electrode to generate electric power, or , A micro-generator using a recess formed in a polymer filled in a recess formed in a substrate (inside polymer recess), and adjacent polymer A first conductor film is formed on both side surfaces of the polymer substrate side wall formed by the recess, a piezoelectric film is formed thereon, and a second conductor film is formed thereon, and the polymer substrate side wall is deformed to deform the piezoelectric film. The micro-generator is characterized in that the electric charges generated on both sides are collected by the first conductor film and / or the second conductor film to generate electric power.

Since the sensor is formed in the thickness direction of the substrate, the size of a microphone (acoustic transducer), a force sensor (acceleration sensor, angular velocity sensor, pressure sensor, etc.), a micro-generator, etc. in the plane of the semiconductor substrate can be made extremely small. Moreover, since it can be formed by using LSI technology such as lithography or imprint method, an extremely precise and inexpensive sensor can be created.

FIG. 1 is a diagram showing a first embodiment (first structure) of a microphone according to the present invention. FIG. 2 is a plan view of the microphone of the present invention. FIG. 3 is a view showing a structure in which through holes 112-4 and 112-5 constituting the capacity space are provided on the side surface of the through hole 112-2. FIG. 4 is a diagram showing a microphone whose planar shape (cross section parallel to the substrate surface) is circular (cylindrical when viewed three-dimensionally). FIG. 5 is a diagram showing a case where a microphone having a rectangular (square or rectangular) shape has two electrodes constituting a capacitor. FIG. 6 is a plan view showing the acceleration sensor of the present invention. FIG. 7 is a schematic diagram showing a deformed state of the substrate side wall due to acceleration. FIG. 8 is a cross-sectional view of the acceleration sensor of the present invention. FIG. 9 is a diagram showing an acceleration sensor having a structure in which capacitor through holes 213, 214, 215, and 216 around a central through hole 211 are connected. FIG. 10 is a view showing an acceleration sensor of the present invention having a through-hole and a substrate side wall having a circular cross section (surface parallel to the substrate surface) (three-dimensionally cylindrical). FIG. 11 is a view showing an acceleration sensor of the present invention having a through-hole having a octagonal cross section and a substrate side wall. FIG. 12 is a diagram showing a manufacturing process of the microphone device or the acceleration sensor device of the present invention. FIG. 13 is a diagram showing another method of forming the electrode of the capacitor. FIG. 14 is a diagram showing a structure and a manufacturing method when a diffusion layer is used for a capacitor electrode in the sensor of the present invention having an annular structure. FIG. 15 is a diagram showing the structure of the charge storage type sensor of the present invention. FIG. 16 is a diagram showing a method for manufacturing the sensor according to the present invention by an imprint process. FIG. 17 is a diagram schematically showing a conventional pressure sensor. FIG. 18 is a diagram showing another embodiment of the acceleration sensor of the present invention. FIG. 19 is a diagram showing another embodiment of an acceleration sensor using a conductive substrate. FIG. 20 is a diagram showing another embodiment of the acceleration sensor of the present invention. FIG. 21 is a manufacturing method of a process for manufacturing a force sensor of the present invention using a conductor substrate. FIG. 22 is a diagram showing a method for forming a sensor of the present invention using an insulator substrate or a semiconductor substrate. FIG. 23 is a diagram showing a method of manufacturing the sensor of the present invention using a semiconductor substrate such as silicon. FIG. 24 is a diagram showing another embodiment in which a diffusion layer is formed on the inner surface of the through hole and the upper surface of the substrate. FIG. 25 is a diagram showing a conventional microphone using a semiconductor substrate. FIG. 26 is a diagram showing another method for manufacturing the sensor of the present invention. FIG. 27 is a diagram showing another embodiment showing the manufacturing method of the present invention using a conductor substrate as a seed substrate. FIG. 28 is a diagram showing a case where a recess is formed in FIG. FIG. 29 is a diagram showing a case where a similar structure to FIG. 28 is applied to the acceleration sensor. FIG. 30 is a diagram showing a method for manufacturing a sensor using an epi-wafer. FIG. 31 is a diagram showing another embodiment of a method for manufacturing a sensor using an epi-wafer. FIG. 32 is a diagram showing an embodiment of a method for producing a sensor of the present invention. FIG. 33 is a diagram showing another method for manufacturing a sensor using an epi-wafer. FIG. 34 is a diagram showing an embodiment of a sensor using a substrate on which an epi-wafer is bonded and a manufacturing method thereof. FIG. 35 is a diagram showing a sensor using a composite substrate in which a conductor substrate and a semiconductor substrate are bonded, and a manufacturing method thereof. FIG. 36 is a diagram illustrating a sensor created using the imprint method and a method for manufacturing the sensor. FIG. 37 is a diagram showing another embodiment for producing a sensor using an imprint mold. FIG. 38 is a diagram showing another embodiment of a method for manufacturing a sensor of the present invention using an imprint method. FIG. 39 is a diagram illustrating a sensor in which a concave portion is formed in an insulating polymer by an imprint molding method, and the mold substrate is used as an insulating substrate on the concave portion, and a manufacturing method thereof. FIG. 40 is a diagram showing a structure of a pressure sensor of the present invention using an imprint method and a manufacturing method thereof. FIG. 41 is a diagram showing the structure of the electric double layer capacitor. FIG. 42 is a diagram showing the structure of another electric double layer capacitor. FIG. 43 is a diagram showing the structure of still another electric double layer capacitor. FIG. 44 shows an example of a plan view of the structure of the electric double layer capacitor. FIG. 45 is a diagram showing a generator using electric charges generated by vibration of a substrate side wall formed between a through hole or a recess formed in a piezoelectric substrate. FIG. 46 is a view showing a micro power generator manufactured by forming recesses in a piezoelectric polymer filled in the recesses formed in the substrate and using the side walls of the piezoelectric polymer substrate between the recesses.

FIG. 1 is a diagram showing a first embodiment (first structure) of an acoustic transducer of the present invention (for example, a microphone, a speaker, an earphone, etc., hereinafter referred to as a microphone). Shown in cross section. The insulating film 113 is formed on the side surface of the recess (through hole in FIG. 1) 112 (112-1, 112-2, 112-3) formed from the first surface 111-S1 to the second surface 111-S2 of the semiconductor substrate 111. Is formed. The semiconductor substrate 111 is a single element semiconductor substrate such as silicon (Si), carbon (C), germanium (Ge), or the like, or gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), silicon carbide ( A two-element semiconductor substrate such as SiC) or a multi-element semiconductor substrate. Alternatively, instead of a semiconductor substrate, an insulating substrate or a conductor substrate may be used. For example, the insulator substrate is an insulator substrate made of a polymer such as glass or plastic, ceramic, or rubber. In the case of an insulating substrate, the insulating film 113 may not be formed. For example, copper (Cu), aluminum (Al), iron (Fe), nickel (Ni), titanium (Ti), zinc (Zn), various alloys (stainless steel, etc.), conductive rubber, conductive It is plastic. In the following description, description will be made mainly on a semiconductor substrate.

The recess 112 is formed substantially perpendicular to the first surface 111-S1 and / or the second surface 111-S2 of the semiconductor substrate 111, and completely penetrates the first surface 111-S1 and the second surface 111-S2. It may be a through hole. In FIG. 1, it demonstrates as a through-hole. The thin plate 110 is attached to the second surface 111-S2 side of the semiconductor substrate 111, and the through holes 112 (112-1, 2, 3) are closed by the second surface 111-S2 of the semiconductor substrate 111. The thin plate 110 may be attached before the through hole 112 is formed, or may be attached after the through hole 112 is formed. In the case where the thin plate 110 is attached after the through-hole 112 is formed, the thin plate 110 can be attached after the insulating film 113 is formed or in a subsequent process.

Conductor films 115 (115-1, 2, 3, 4) are formed on the side surfaces of the through holes 112 (112-1, 3). In the through hole 112-1, the conductor films 115-1 and 115-2 face each other and are not connected. That is, the conductor films 115-1 and 115-2 are not connected in the direction perpendicular to the paper surface. Further, since the conductor films 115-1 and 115-2 are not connected in the region other than the through hole 112-1, the conductor films 115-1 and 115-2 are connected to the through hole 112 in the through hole 112-1. -1 is a counter electrode of a capacitor having the internal space as a capacitive component.
Further, in the through hole 112-3, the conductor films 115-3 and 115-4 face each other and are not connected. That is, the conductor films 115-3 and 115-4 are not connected in the direction perpendicular to the paper surface. Further, since the conductor films 115-3 and 115-4 are not connected in the region other than the through hole 112-3, the conductor films 115-3 and 115-4 are connected to the through hole 112 in the through hole 112-1. -1 is a counter electrode of a capacitor having the internal space as a capacitive component.

The through hole 112-2 is a part that receives and introduces sound waves from the outside, and is sandwiched between the through hole 112-1 and the through hole 112-2, and the through hole 112-3 and the through hole 112-2 by the sound wave. The substrate (referred to as a substrate side wall) 111 (111-1, 111-2) vibrates. In other words, these substrate side walls 111 (111-1, 111-2) serve as diaphragms. This diaphragm corresponds to a diaphragm.
If a constant voltage V is applied between the conductor films 115-1 and 115-2, the opposing conductor film (in the through hole 112 (112-1)) (by the vibration of the substrate side wall 111 (111-1)) ( The capacitance between 115-1 and 115-2 is changed because it is also an electrode of the capacitor (sometimes called an electrode). Also, if a constant voltage V is applied between the conductor films 115-3 and 115-4, the opposing conductor film (capacitor electrode in the through hole 112 (112-3) is also called an electrode. The capacitance between 115-3 and 115-4 may change. The sound pressure level of the sound wave can be obtained by converting the amount of change in capacitance into a change in voltage.

The thin plate 110 is attached to the second surface 111-S2 side of the semiconductor substrate 111, but the thin plate 119 may be attached to the first surface 111-S1 side. Since the front and back surfaces of the through-holes 112 (112-1, 2, 3) are covered with the thin plates 110 and 119, the microphone of the present invention is resistant to mechanical shock and is also resistant to changes in the external environment (environment resistance). strong. As shown in FIG. 1, the thin plate 119 covering the through hole 112 (112-2) that receives the sound wave 127 from the sound source 126 is provided with one or a plurality of sound wave introduction holes (openings) 122 for introducing the sound wave 127. The sound wave 127 is efficiently introduced into the through hole 112 (112-2). Alternatively, only one sonic wave introduction hole (opening) 122 is opened on the first surface 111-S1 side of the through hole 112 (112-2), or the sonic wave introduction hole (opening) 122 is opened in the entire through hole. May be.

In order to prevent the sound wave introduced into the through-hole 112 (112-2) from staying in the through-hole, the through-hole 112 (in the thin plate 110 covering the second surface 111-S2 side of the semiconductor substrate 111). A sound wave hole 127 may be provided in a part of the portion 112-2). Since sound waves are vibrations of air, air vibrations quickly escape from the sound wave holes 127. Of course, the sound wave introduced into the through-hole 112 (112-2) also escapes from the sound wave introduction hole (opening) 122. Therefore, the sound wave introduction hole 127 of the thin plate 110 covering the second surface 111-S2 side of the semiconductor substrate 111 can be used as a sound wave introduction hole. In this case, the second surface 111-S2 of the semiconductor substrate 111 is used. Sound from the side can also be detected.

The substrate side wall 111 (111-1, 111-2) vibrates in response to the sound wave, and the electrostatic capacity of the capacitance space 112 (112-1, 112-2) changes due to the vibration. At this time, a gas such as air is contained in the through-hole 112 (112-1, 112-2) which is a capacity space, and the through-hole 112 (112-1, 112-2) is sealed with the thin plates 110 and 119. If it is, the pressure in the through-hole 112 (112-1, 112-2) will change. Since this pressure change may affect the vibration of the substrate side wall 111 (111-1, 111-2), in order to prevent the pressure in the through hole 112 (112-1, 112-2) from changing. In addition, the gas vent holes 128 (128-1, 128-2) are opened in the thin plate 110 covering the through holes 112 (112-1, 112-2). This may be opened on the thin plate 119 side, or may be opened on both sides. However, it is necessary to prevent sound waves from entering from the gas vent holes 128 (128-1, 128-2). This is because when sound waves enter from the gas vent holes 128 (128-1, 128-2), the side walls 111 (111-1, 111-2) also vibrate from here. In addition, if the inside of the through-hole 112 (112-1, 112-2) is sealed in a vacuum (close to) state, there is no pressure fluctuation.

An insulating film 117 is formed and protected on the electrode / wiring (conductor film) 115 (115-1, 2, 3, 4) of the through hole 112 (112-1, 112-2). The insulating film 113, the conductor film 115, and the insulating film 117 are formed not only in the through hole but also on the first surface 111-S1 (or the second surface 111-S2) of the semiconductor substrate 111. As can be seen from FIG. 1, the conductor film 115 is patterned in the through holes 112 (112-1, 112-2) so as to serve as capacitor electrodes / wirings, and the first surface 111 -S 1 (or the semiconductor substrate 111) The second surface 111-S2 may be used). A contact hole 123 is opened in the insulating film 117 at a predetermined portion on the first surface 111 -S 1 of the semiconductor substrate 111, and a voltage V is supplied from the contact hole 123. Also in the thin plate 119, the contact hole 123 is opened in the power supply part region (power supply opening part) 121.

FIG. 2 is a plan view of the microphone of the present invention. Rectangular through holes 112 (112-1, 112-2, 112-3) are arranged in parallel. There is a substrate side wall 111-1 between the through holes 112-1 and 112-2, and a substrate side wall 111-2 between the through holes 112-2 and 112-3, and these substrate side walls 111-1 and 111-2 are It becomes a diaphragm and vibrates by the sound wave introduced into the through hole 112-2. As can be seen from FIGS. 1 and 2, the substrate side walls 111-1 and 111-2 are rectangular (rectangular), and are three-dimensionally speaking in three dimensions. If the thickness of the substrate sidewalls 111-1 and 111-2 is a, the width is b, and the depth is h, the size (volume) of the substrate sidewall is abh. When the width of the through hole 112-1 is e, the width of the through hole 112-2 is d, and the width of the through hole 112-3 is f, the size (volume) of the through hole 112-1 is bhe, and the through hole 112- The size (volume) of 2 is bhd, and the size (volume) of the through hole 112-3 is bhf. Normally, since the through hole 112-1 and the through hole 112-3 have the same size, e = f. In the case of a through hole, h is approximately equal to the thickness of the substrate 111. In the case of a recess, h is smaller than the thickness of the substrate 111.

In FIG. 2, only a part of the thin film is shown so that the state of the thin film formed on the substrate 111 can be understood, but the configuration of the thin film is the same as that in FIG. In the through holes 112-1 and 112-3 serving as the capacitor space, the insulating film 113 is formed on the side surface of the through hole, and the conductor film 115 is formed thereon. The conductor film 115 is subjected to necessary patterning. In the through-hole 112-1, the conductor films 115-1 and 115-2 are not conductive because they are electrodes / wirings facing each other. Since the size (area) of them (side electrodes of the conductor films 115-1 and 115-2) is substantially the same as the side surface of the through hole 112-1, it is bh. The distance between the side electrodes of the conductor films 115-1 and 115-2 is e (strictly, it is necessary to consider the thickness of the insulating film 113 and the conductor film 115). The capacitance C1 generated between the side electrodes 115-2 is C1 = ε · ε0 · e / bh. Here, ε0 is a dielectric constant in vacuum, and ε is a dielectric coefficient.
In the through-hole 112-3, the conductor films 115-3 and 115-4 become electrodes / wirings facing each other and are not conductive. Since the size (area) of these (side electrodes of the conductor films 115-3 and 115-4) is substantially the same as the side surface of the through hole 112-3, it is bh. Since the distance between the side electrodes of the conductor films 115-3 and 115-4 is f (strictly, it is necessary to consider the thickness of the insulating film 113 and the conductor film 115), the conductor films 115-3 and 115-4 The capacitance C2 generated between the side electrodes 115-4 is C1 = ε · ε0 · f / bh.

When the substrate side walls 111-1 and 111-2 vibrate, e and f change, so that the capacitances C1 and C2 change. If this change is detected, a capacitance change signal corresponding to the sound wave (a voltage change corresponding thereto) can be obtained, so that it can be returned to the sound wave again. An insulating film 117 is formed on the patterned conductor film 115. Although not shown in FIG. 2, insulating films 113 and 117 are formed on the substrate 111, and the conductor film 117 is patterned for electrode / wiring extraction. In the through hole 112-2, the conductor film 115 is not necessary and is preferably removed by etching, but may be left if there is no problem in receiving the sound wave. Therefore, in the through hole 112-2, the insulating films 113 and 117 are laminated. Although not shown in FIG. 2, the thin plate 110 exists at the bottom of the through holes 112-1, 112-2, 112-3 as can be seen from FIG. Etc., these films may be left. However, it is a matter of course that the conductor film 115 needs to be removed in the through holes 112-1 and 112-3 constituting the capacitance space. (Prevent the capacitor electrode from conducting.)
In FIG. 1 and FIG. 2, the through holes 112-1 and 112-3 forming the capacity space are formed on both sides of the sound wave introducing through hole 112-3. Capacitance change due to sound waves can be detected. By forming the through-holes on both sides, the amount of change in capacitance is about twice that in the case of only one side, so that the detection sensitivity can be increased.

FIG. 3 is a diagram showing a structure in which through holes 112-4 and 112-5 forming a capacity space are further provided on the side surface of the through-hole 112-2. Accordingly, since the through holes constituting the capacitive space are formed on all four side surfaces of the rectangular sound wave introducing through hole 112-2, the four substrate side walls 111-1 and 111 are formed between these through holes. -2, 111-3, and 111-4. These four substrate side walls 111-1, 111-2, 111-3, 111-4 vibrate by the sound wave introduced into the sound wave introducing through hole 112-2, and accordingly, the through holes 112-1, 112- Since the capacitances at 3, 112-4, and 112-5 change, sound waves can be detected, and the change amount of the capacitance is amplified, so that the detection sensitivity of the sound waves increases. In FIG. 3, only a part of the thin film is shown so that the state of the thin film formed on the substrate 111 can be seen, but the configuration of the thin film is the same as that in FIG.
If the width of the substrate side wall 111-3 is j and the width of the through hole 112-4 is g, the size of the through hole 112-4 is dhg. If the width of the substrate side wall 111-4 is k and the width of the through hole 112-5 is m, the size of the through hole 112-5 is dhm. If the plane shape of the sound wave introducing through hole 112-2 is formed in a square shape (that is, b = d) and the widths of the substrate side walls 111-1, 111-2, 111-3, 111-4 are made the same. (That is, a = j = k), the vibration modes of the substrate side walls 111-1, 111-2, 111-3, and 111-4 are the same. (When the semiconductor substrate is a single crystal substrate of silicon, each surface of the substrate sidewalls 111-1, 111-2, 111-3, 111-4 is perpendicular to the substrate surface and perpendicular to each other. And the through-hole through-holes 112-1, 112-3, 112-4, and 112-5 have the same size (ie, e = f = j = m). The capacitance changes of the capacitors in the through holes 112-1, 112-3, 112-4, and 112-5 are the same. By doing so, the amount of change in capacitance is amplified about four times, and the detection sensitivity of sound waves increases.

FIG. 4 is a diagram showing a microphone whose planar shape (cross section parallel to the substrate surface) is circular (cylindrical when viewed three-dimensionally). The through hole 132 (132-1) for introducing a sound wave has a circular shape with a radius r1, and a substrate side wall 131 (131-1) with a radius r2 and a width (thickness) r2-r1 surrounds the periphery. Further, a through-hole 132 (132-2) serving as a capacity space having a radius r3 and a width r3-r2 is surrounded by the periphery. That is, the through hole 132 (132-2) has a donut shape. Moreover, the through-hole 132 (132-1), the board | substrate side wall 131 (131-1), and the through-hole 132 (132-2) are concentric. Although an insulating film or the like is not shown in FIG. 4, the cross-sectional structure is actually the same as that of FIG. 1, and the structures of the insulating film and the conductor film are also the same as those of FIGS. In FIG. 4, only a part of the thin film is shown so that the state of the thin film formed on the substrate 111 can be understood, but the configuration of the thin film is the same as that in FIG.

A conductor film 135 (135-1) is laminated on the outer periphery of the substrate side wall 131 (131-1), and the conductor film 135 (135-2) is also formed on the outer periphery of the through hole through hole 132 (132-2). Are stacked. The conductor film 135 (135-1) and the conductor film 135 (135-2) do not conduct and constitute an electrode of a capacitor having a distance r3-r2. (In actuality, it is necessary to consider the thickness of the conductor film and the thickness of other insulating films.) When sound waves are introduced into the through holes 132 (132-1), the substrate sidewall 131 (131-1) Vibrates according to the vibration of the sound wave. Since the electrostatic capacitance between the conductor film 135 (135-1) and the conductor film 135 (135-2) changes in accordance with the vibration of the substrate side wall 131 (131-1), a constant voltage is applied between these electrodes. If V is applied, a change in capacitance can be detected. That is, a sound wave signal can be detected.

A concentric microphone as shown in FIG. 4 has two electrodes constituting the capacitor, which is smaller than those in FIGS. 2 and 3, and the area of the counter electrode constituting the capacitor can be increased (unit area). Therefore, the sensitivity of the microphone can be increased, and a highly efficient microphone device can be manufactured. The circular shape shown in FIG. 4 is isotropic on the substrate surface and is therefore suitable for detecting a sound wave signal. FIG. 5 is a diagram showing a case where a microphone having a rectangular (square or rectangular) shape has two electrodes constituting a capacitor. The electrodes may be divided as shown in FIG. 2 and FIG. 3, but by connecting the capacitor to two counter electrodes as shown in FIG. The area can be reduced, and the overall capacitance can be increased. Therefore, the detection sensitivity per unit area can be increased. In FIG. 6, only a part of the thin film is shown so that the state of the thin film formed on the substrate 111 can be understood, but the configuration of the thin film is the same as that of FIG.

As can be seen from FIGS. 1 to 5, the planar shape (cross section parallel to the substrate surface) may be other shapes. For example, it may be triangular, pentagonal or more polygonal, or elliptical. In the case of a polygon more than a triangle, a regular polygon is desirable because the deformation due to vibration in each face is the same or similar. Although the electrode outlet is not shown in FIGS. 2 to 5, as shown in the cross-sectional shape of FIG. 1, a contact hole is formed in the thin plate attached to the upper surface of the substrate side wall, and this contact hole is formed on the upper surface of the substrate side wall. Also, the laminated conductor film is exposed to form an electrode outlet. The conductor film laminated on the upper surface of the substrate side wall is a thin film continuous with the conductor film (for example, 135-1 and 135-2 in FIG. 4) laminated on the side surface of the substrate side wall. Further, necessary patterning is performed on the conductor film laminated on the side surface, top surface, and bottom of the through hole of the substrate side wall.

FIG. 6 is a plan view showing the acceleration sensor of the present invention. A cross-sectional view parallel to the substrate surface or a view of the upper surface or the lower surface may be considered. The thin film structure is the same as in FIG. 1, but only the necessary thin film is shown. As shown in FIG. 6, the substrate side wall 201 (201-1, 201-2, 201-) is parallel to each of the four side surfaces of the rectangular parallelepiped, with a substantially rectangular shape (substantially rectangular parallelepiped shape) through-hole 211 as the center. 3, 201-4), four through holes 213, 214, 215, 216 are arranged. These four through holes 213, 214, 215, and 216 are substantially rectangular parallelepiped spaces having a width of p, a length of q, and a depth of s, and the central through hole 211 is a square having a length of q. A space having a substantially rectangular parallelepiped shape with a depth of s. Further, the width (thickness) of the substrate side wall 201 (201-1, 201-2, 201-3, 201-4) is t. p, q, s, and t may be changed for each through-hole and each substrate side wall. In that case, a conversion comparison circuit is used by using a capacitance conversion circuit in order to compare the magnitude of acceleration detected by each through-hole. Since it is necessary to provide each through-hole (except for the central through-hole 211) and each substrate side wall, it is better to have the same size, and it is desirable that p, q, s, and t have the same value.

In the capacitor through hole 213 serving as a capacitor space, the conductor film 221 formed on the side wall of the substrate becomes one electrode of the capacitor 213, and the conductor film 222, which is the other electrode facing the capacitor film 213, is formed in the capacitor through hole 213. Is formed on the other inner surface of the. Since the distance between these two electrodes is p (actually, it is necessary to consider the thickness of the insulating film, conductor film, etc. formed in the through hole 213). The electrostatic capacity C of C = ε · ε0 · p / (qs).

Similarly, in the capacitor through-hole 214 serving as a capacitor space, the conductor film 223 formed on the side wall of the substrate serves as one electrode of the capacitor 214, and the conductor film 224, which is the other electrode opposite to the capacitor 214, serves as a capacitor. It is formed on the other inner surface of the through hole 214. Since the distance between these two electrodes is p (actually, it is necessary to consider the thickness of the insulating film, conductor film, etc. formed in the through-hole 214). The electrostatic capacity C of C = ε · ε0 · p / (qs).

Similarly, in the capacitor through-hole 215 serving as a capacitor space, the conductor film 225 formed on the side wall of the substrate serves as one electrode of the capacitor 215, and the conductor film 226, which is the other electrode facing the capacitor film 225, serves as a capacitor. It is formed on the other inner surface of the through hole 215. Since the distance between these two electrodes is p (actually, it is necessary to consider the thickness of the insulating film, conductor film, etc. formed in the through hole 215). The electrostatic capacity C of C = ε · ε0 · p / (qs).

Similarly, in the capacitor through-hole 216 serving as a capacitor space, the conductor film 218 formed on the side wall of the substrate becomes one electrode of the capacitor 216, and the conductor film 219, which is the other electrode facing the capacitor film 216, is used for the capacitor. It is formed on the other inner surface of the through hole 216. Since the distance between these two electrodes is p (actually, it is necessary to consider the thickness of the insulating film, conductor film, etc. formed in the through hole 216). The electrostatic capacity C of C = ε · ε0 · p / (qs).

FIG. 7 is a schematic diagram showing a deformation state of the substrate side wall due to acceleration. Assume that the horizontal direction is X, the vertical direction is Y, and the acceleration α works in the Y direction. A force F (= mα, m is the mass of the substrate) due to the acceleration α acts on the substrate side wall 201-4. The deformation of the substrate side wall 201-4 is restricted at the periphery, but the inside thereof is not restricted. Therefore, the substrate side wall 201-4 is deformed into a curved shape swelled inside the through hole 216. Since the force F caused by the acceleration α acts uniformly in the Y direction on the side surface of the substrate substrate side wall 201-4, the vicinity of the center portion of the substrate side wall 201-4 is most curved. If the displacement of the substrate side wall 201-4 in the X direction is y, x = 0, q and y = 0, and x = q / 2 and y = y0 (maximum value). y0 is approximately obtained by the following relational expression.
y0 = β * F * s ⁴ / (Et ³ )
(E is the Young's modulus of the substrate side wall (diaphragm), β is a constant that varies depending on the aspect ratio of the diaphragm)

Accordingly, since the interelectrode distance between the electrodes 218 and 219 of the through hole 216 changes, the capacitance between the electrodes 218 and 219 changes (the capacitance increases). Conversely, by measuring this capacitance, the distance between the electrodes can be obtained, the force due to the acceleration can be obtained, and the acceleration can be calculated.

The substrate sidewall 201-2 opposite to the substrate sidewall 201-4 is also subjected to the force F due to the acceleration α, and the substrate sidewall 201-2 is also deformed in the same direction as the substrate sidewall 201-4. That is, the substrate side wall 201-2 is deformed to the inner side of the central through hole 211 and is deformed to the outer side of the through hole 214. Accordingly, since the interelectrode distance between the electrodes 223 and 224 of the through hole 214 changes, the capacitance between the electrodes 223 and 224 changes (the capacitance decreases). Conversely, by measuring this capacitance, the distance between the electrodes can be obtained, the force due to the acceleration can be obtained, and the acceleration can be calculated. It can also be seen that when the capacitance decreases at the through-hole 214 and increases at the through-hole 216, the acceleration is in the Y direction (from the bottom to the top in FIG. 7). That is, the direction of acceleration is also known.

Since the substrate side walls 201-1 and 201-3 are not deformed with respect to the acceleration in the Y direction, there is no change in capacitance in the through holes 213 and 215. Since the substrate side walls 201-1 and 201-3 are deformed with respect to the acceleration in the X direction, the capacitance of the through holes 213 and 215 changes, and the magnitude and direction of the acceleration in the X direction can be known. .

All of the four substrate side walls 201-1, 201-2, 201-3, 201-4 are deformed with respect to acceleration having an angle in a certain direction with respect to the X direction and the Y direction. The capacitances 214, 215, and 216 change. The acceleration (size, direction) can be detected by detecting the capacitance change of only two adjacent through holes. For example, the capacitances in the through holes 213 and 214 may be detected. The capacitances in the other two through holes 215 and 216 may be used to increase detection accuracy.

FIG. 8 is a cross-sectional view of the acceleration sensor of the present invention. Since the thin film structure is the same as that of FIG. 1, a part thereof is omitted. FIG. 8 is a cross-sectional view taken along the line CD in FIG. 6, for example. There is a substrate side wall 201-1 or 201-3 that separates the through hole 211 perpendicular to the first surface 201-S2 and the second surface 201-S2 of the substrate 201 and the adjacent through hole 213 or 215, and the substrate side wall 201-1 or 201-3 is deformed by a force due to acceleration. A conductor film 221 is formed in the through hole 213 on the substrate side wall 201-1. The through hole 213 is a capacity space, and the conductor film 221 is one electrode of the capacitor. The conductor film 222 which is the other electrode of the capacitor facing this conductor film 221 is formed on the inner surface of the substrate 211 facing the substrate side wall 201-1 in the through hole 213. The substrate 201-5 on which the conductor film 222 is formed is hardly deformed by a force due to acceleration.

The through hole 215 serves as a capacity space, and the conductor film 225 serves as one electrode of the capacitor. The conductor film 226 which is the other electrode of the capacitor facing this conductor film 225 is formed on the inner surface of the substrate 211 facing the substrate side wall 201-3 in the through hole 215. The substrate 201-7 on which the conductor film 226 is formed is hardly deformed by a force due to acceleration. A thin plate 232 is attached on the first surface 201-S1 of the substrate 201, and a thin plate 231 is attached on the second surface 201-S2 of the substrate 201, covering the through holes 211, 213, and 215. . The through holes 211, 213, and 215 may be completely sealed, or vent holes 234, 235, 236-1, and 236-2 with the outside may be provided. In the case of complete sealing, the inside of the through hole may be evacuated or filled with air, nitrogen or the like. In the case of complete sealing, the change inside the through hole is smaller due to the change in the external environment. The vent holes 234, 235, 236-1 and 236-2 can be formed in the thin plates 231 and 232.

Now, the substrate side walls 201-1, 201-2, 201-3, 201-4 are deformed by the force due to acceleration, and the force is the mass of the substrate side walls 201-1, 201-2, 201-3, 201-4. Depends on. (F = mα) Since the substrate side walls 201-1, 201-2, 201-3, 201-4 cannot be made too thick, the mass cannot be increased. Thus, the liquid 229 can be put into the through-hole 211, and the substrate side walls 201-1, 201-2, 201-3, 201-4 can be greatly deformed by using the force due to the acceleration applied to the liquid. That is, the substrate side walls 201-1, 201-2, 201-3, 201-4 can be greatly deformed without making them heavy. The substrate side walls 201-1, 201-2, 201-3 and 201-4 are made as thin as possible to be easily deformed, and the force due to acceleration is generated by the liquid 229 placed in the through hole 211. Since the liquid pushes the substrate side wall arranged in the acceleration direction by the acceleration by the acceleration force applied to the liquid, the substrate side wall is deformed correspondingly, and the capacitance in the through hole due to this deformation changes. The substrate side wall is subjected to a force by the liquid in addition to the acceleration force applied to the substrate side wall itself.

As the mass of the liquid increases, an acceleration force is generated. For example, mercury (Hg) has a specific gravity of about 13.8 and is an optimal liquid for the present invention. In addition, sodium polytungsten (specific gravity is about 3 to 5), acetylene tetrabromide (specific gravity is about 3), etc. can be used. Although the specific gravity is not so large, various liquids such as water and heavy oil can be used. The liquid 229 can be put into the through hole 211 by opening a plurality of holes 236-1 and 236-2 in the thin plate 232 of the through hole 211 and putting it in from one hole 236-1 and exiting from the other hole 236-2. . If the holes 236-1 and 236-2 are closed after the liquid 229 is added, there is no fear that the liquid 229 leaks. The liquid 229 may be put into the through-hole 211 before the thin plate 232 is attached on the substrate 201-S1. In this case, the ventilation holes 236-1 and 236-2 of the through hole 211 may not be provided. The liquid 229 may be filled in the entire through-hole 211 or only a part thereof. What is necessary is just to adjust the amount put into the through-hole 211 according to the amount of deformation of the substrate side wall and the magnitude of the acceleration force.

FIG. 9 is a diagram showing an acceleration sensor having a structure in which capacitor through holes 213, 214, 215, and 216 around a central through hole 211 are connected. The substrate side walls 201-1, 201-2, 201-3, 201-4 are surrounded around the central rectangular through-hole 211, and 217 (through-holes 213, 214, 215, 216 are formed as capacity spaces around the periphery. The connected capacity space is denoted by 217). The inner side surface and the outer side surface of the capacity space 217 are separated by a distance p on each side of the rectangle. (The thickness of the substrate side wall is t.) Conductor films 218, 221, 223, and 225 and 216, 222, 224, and 226 serving as electrodes are laminated on the inner side surface and the outer side surface of the capacitor space 217, and the capacitor is formed. Forming. Thus, by connecting the through holes serving as the capacity spaces, the planar area can be reduced. Furthermore, either the conductor film (218, 221, 223, 225) on the inner side surface of the through hole or the conductor film (216, 222, 224, 226) on the outer side surface of the through hole can be connected. Therefore, patterning is not necessary and electrode wiring can be reduced. That is, the process can be simplified.

In FIG. 9, when the substrate is a silicon wafer and the substrate surface is a (100) plane, if the X direction is the <01-1> direction, the Y direction is the <011> direction. ˜4 is the (011) plane and the crystal axes are equivalent. Therefore, if the thickness is the same, the deformation amount of each substrate side wall is the same for the same acceleration, so that the comparison can be easily made without conversion by calculation. Since the outside of the through-hole 217 is surrounded by thick substrates 201 (201-5 to 8), these substrates hardly change due to acceleration, so that the static capacity of each capacitance space (213, 214, 215, 216) can be reduced. It can be considered that the capacitance change is caused by the deformation of the substrate side walls 201-1 to 201-4. 9 does not show an insulating film or the like, but its structure is the same as that shown in FIG.

FIG. 10 is a view showing an acceleration sensor of the present invention having a through-hole and a substrate side wall having a circular cross section (surface parallel to the substrate surface) (three-dimensionally cylindrical). A circular (three-dimensionally cylindrical) through-hole 311 (radius r5) is provided in the center of the substrate 301, and a circular substrate sidewall 301 (301-2) having a radius r6 surrounds the through hole 311. Further, a circular through hole 313 having a radius r7 surrounds the periphery. The through hole 313 is surrounded by the substrate 301 (301-1). Accordingly, the substrate side wall 301 (301-2) has a donut shape with a thickness of r6-r5. The through hole 313 is also a donut-shaped cavity having a width r7-r6. The through hole 311, the substrate side wall 301-2, and the through hole 313 are arranged concentrically.

A conductor film 315 is laminated on the inner side surface of the through hole 313 serving as a capacity space (that is, the outer surface of the substrate side wall 301 (301-2)), and the outer side surface of the through hole 213 (that is, the inner side of the substrate 301 (301-1)). A conductor film 317 is laminated on the side surface. (The thin film structure is the same as that shown in FIG. 1 and the like, and an insulating film and the like are also laminated, but are omitted in FIG. 10.)

The conductor film 317 is divided into substantially equal lengths on the circumference. For example, if it is divided into n pieces by the distance u2 between the electrode having a length u1 on the circumference, n (u1 + u2) = 2πr7 holds. One electrode of the conductive film 317 is 317-1, an electrode next to it (the direction around the clock) is 317-2, and an electrode next to it (the direction around the clock) is 317-3. A capacitor is formed between the conductor film 315 and the conductor film 317. That is, the capacitance can be measured between the electrodes 317-1 and 317-2 and the conductor film 315. When there is no acceleration, the distance w between these electrodes is the same for any capacitor, and w = r7−r6 = w0 (in fact, it is necessary to consider the thickness of the conductor film), and the capacitance is the same for any capacitor. (This capacity is C0). Assume that the substrate side wall 301-2 is deformed due to the acceleration. If the acceleration direction is the direction of the electrode 317-2, the substrate side wall 301-2 facing the electrode 317-2 is deformed, and the distance between the electrode 317-2 and the conductor film 317 is smaller than w0. Therefore, the capacity becomes larger than C0. The capacitance of the electrodes 317-1 and 317-3 adjacent to the electrode 317-2 is also smaller than C0, but the capacitance of the electrode 317-2 is the largest. The magnitude of acceleration can be calculated from the amount of change in capacitance. That is, looking at the capacitance of each of the n electrodes 317 (317-1 to n), the direction of the electrode having the largest capacitance is the direction of acceleration, and the magnitude of acceleration is determined from the amount of change in the capacitance. Can be calculated.

By increasing the number of divided conductive films 317, the direction of acceleration and the magnitude of acceleration can be detected with higher accuracy. Even if the conductor film 315 on the inner side surface of the through hole 313 is divided and the conductor film 317 is not divided, the direction and magnitude of acceleration can be measured in the same manner. Alternatively, both conductor films 315 and 317 may be divided. Furthermore, the amount of deformation of the substrate side wall 301-2 may be increased by putting a liquid in the through hole 311.

FIG. 11 is a view showing an acceleration sensor of the present invention having a through-hole having a octagonal cross section and a substrate side wall. An octagonal (three-dimensionally hexagonal column) substrate side wall 331-2 surrounds a through hole 333 having a central octagonal cavity, and an octagonal cavity serving as a capacity space is surrounded by the substrate sidewall 331-2. The through-hole 334 which has has, and the circumference | surroundings surround the thick board | substrate 331-1. The substrate side wall 331-2 is deformed by a force due to acceleration. A conductor film 336 is formed on each side (surface) of the substrate side wall 331-2 and patterned into one electrode (for example, 336-1, 2). A tooth conductor film 338 is formed on the outer side surface of the through-hole 334 serving as a capacity space, and is patterned on the other electrode (for example, 338-1, 2).

In the through hole 334, a capacitor is formed between the electrode on the inner side surface and the electrode on the outer side surface, and the capacitance can be measured. For example, the capacitance can be measured by the electrode 336-1 and the electrode 338-1 facing the electrode 336-1. Even if either electrode 336 or 338 is connected, the capacitance in each region (corresponding to each side (surface)) can be measured. In order to directly compare the deformation at each side, the octagonal shape is preferably a regular octagonal shape. However, if the substrate is not isotropic in each direction, the magnitude of the deformation on each side differs depending on the magnitude of the force due to acceleration, so it is necessary to correct the difference and calculate the magnitude of acceleration. There is. For example, when the substrate is single crystal silicon (silicon wafer), the substrate surface is the (100) surface, and one side (surface) of the substrate side wall 331-2 (for example, 331-2-1) is the {110} surface. When it is a system, the adjacent surfaces are {111} plane systems and have different Young's moduli, so that the amount of deformation differs even when the same force is applied. Accordingly, it is necessary to take this crystal orientation into consideration when obtaining the deformation amount from the capacitance change of the capacitor and further calculating the magnitude of the force from the deformation amount.

If an acceleration sensor having a substrate side wall and a through hole having such an octagonal shape is used, eight acceleration directions can be accurately detected. That is, if a capacitor having the largest deformation amount (large capacitance) is detected (this is extremely simple), the direction of the substrate becomes the direction of acceleration. Furthermore, the direction can be detected more finely by precisely analyzing the deformation amount of each capacitor. However, in order to obtain the direction of acceleration more accurately, the number of sides may be increased. According to the present invention, various polygonal through holes and substrate side walls can be formed by changing a mask when forming the through holes 333 and 334. A regular polygon can be easily produced. For example, one side of a regular icosahedron whose radius of the circumscribed circle of the through hole 333 is 100 μm is about 6, 3 μm, so that patterning can be performed without any problem. Therefore, the direction of acceleration can be accurately detected at intervals of 3.6 ° with respect to all 360 ° directions. Furthermore, a finer direction can be calculated by comparing the acceleration amounts of the other sides (surfaces). The same applies to the circular acceleration sensor shown in FIG. In addition, the amount of deformation due to the acceleration of the substrate side wall can be increased by putting a liquid in the central through hole 333.

Next, a manufacturing process of the microphone device or the acceleration sensor device of the present invention will be described. Since the basic structures of the microphone device and the acceleration sensor device of the present invention are similar as described above, they will be described together.

FIG. 12 is a diagram showing a manufacturing process of the microphone device or the acceleration sensor device of the present invention. As shown in FIG. 12A, an insulating film 402 is formed on a first surface (also referred to as a front surface or a main surface) 401-S1 of a substrate 401. The substrate 401 is a single element semiconductor substrate such as silicon (Si), germanium, or carbon (or diamond), or two elements such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), or indium phosphide (InP). Insulating substrates such as semiconductor substrates, multi-component semiconductor substrates of ternary or higher, glass, ceramic, (insulating) plastic, (insulating) combs, (insulating) polymer resins, or metals (iron, copper, Zinc, titanium, tungsten, molybdenum, nickel, chromium, aluminum, various alloys), conductive plastics, conductive rubber, conductive polymer resins, and other conductive substrates. Alternatively, a substrate in which these substrates are stacked, for example, a bonded substrate may be used. An SOI (Silicon On Insulator) substrate may be used.

The substrate has a circular shape, a rectangular shape, etc. If the circular shape is 1 inch diameter or more, if the rectangular shape is 1 inch □ or more, it is practical, but the larger the number, the larger the number of chips (chips). . In addition, if the substrate is the same as that of other devices such as an IC or LSI, the substrate is a semiconductor substrate. The thickness of the substrate is easy to handle in the range of about 0.1 mm to 1.0 mm, but is not particularly limited, and may be a substrate thinner than 0.1 mm or a substrate thicker than 1.0 mm.

A photosensitive film 404 is formed on the insulating film 402 and necessary windows are opened using an exposure method. The insulating film 402 has a purpose of facilitating opening of the window of the photosensitive film 404, a purpose of becoming a mask when the substrate 401 is etched thereafter, or a purpose of protecting the substrate 401. However, the insulating film 402 is not provided. However, it may not be formed if these purposes can be realized. The insulating film is a silicon oxide film (SiOx), a silicon nitride film (SiNy), a silicon oxynitride film (SiOxNy) or the like that is laminated by CVD, PVD, or the like. When the substrate is silicon, a thermal oxide film or a thermal nitride film may be used. The thickness of the insulating film 402 is about 0.1 μm to 2 μm, although it varies depending on the purpose. Of course, it may be thinner or thicker as long as the above object can be achieved. Note that the insulating film 403 may be stacked over a second surface (also referred to as a back surface or a sub surface) 401 -S 2 of the substrate 401. In particular, in order to prevent the substrate 401 from warping, an insulating film having the same degree as that of the first surface is preferably formed.

The photosensitive film 404 is, for example, a photoresist film or a photosensitive sheet. The thickness of the photosensitive film 404 refers to the depth to which the substrate 401 is etched, and the etching selectivity when etching the substrate 401 (that is, the ratio of the etching rate of the substrate 401 to the etching rate of the photosensitive film 404). ), Determined by variations in etching rate, and the like. For example, the etching amount of the substrate 401 (the depth of the through-hole or the depth of the concave portion (not the through-hole but when stopped in the middle), which corresponds to the thickness of the substrate in the case of the through-hole) is 400 μm, When the etching selectivity of the photosensitive film 404 is 50, the thickness of the insulating film 402 is 1 μm, and the etching selectivity of the insulating film 402 and the photosensitive film 404 is 10, the first photosensitive film is photosensitive when the insulating film 1 μm is completely etched. The film 404 is etched by about 0.1 μm, and the photosensitive film 404 is etched by about 8 μm when the substrate is etched by 400 μm. If the variation is 10%, the photosensitive film 404 may have a thickness of about 10 μm. From the above, it is important to increase the etching selectivity between the substrate 401 and the photosensitive film 404.

Opening of the photosensitive film 404 removes the photosensitive film in the region where the central through hole (through hole for sound wave introduction in the microphone device) 405-1 and the through holes 405-2 and 405-3 for the capacitor are formed. . When the photosensitive film is a positive type, light is applied to this region, and light is not applied to a portion where the photosensitive film is left. The opposite is true when the photosensitive film is negative. Exposure is performed using a mask or reticle for this purpose. Light refers to electromagnetic waves such as X-rays and γ-rays, ultraviolet rays, visible light, and the like. It also includes electron beams. After the photosensitive film is exposed, the photosensitive film 404 is patterned by leaving a necessary part with a developer and removing an unnecessary part. The shape of the photosensitive film is desirably a vertical shape in order to perform etching of the base as faithfully as possible to the pattern of the photosensitive film.

Next, as shown in FIG. 12B, the insulating film 402 is etched in the regions 405-1, 2, 3, etc. opened with the photosensitive film 404 as a mask. It is desirable to etch the insulating film as faithfully as possible to the photosensitive film 404 as well. For example, when etching a silicon oxide film (SiOx), anisotropic etching close to a vertical pattern can be performed by RIE (reactive dry etching) using CHF3 gas, C2F6 + H2 gas, or the like.

After the insulating film 402 is etched, the exposed substrate 401 is etched in the openings 405-1, 2, 3 and the like of the photosensitive film 404, and the through holes 406 (406-1, 406-2, 406-3) are formed. Make it. The through holes 406 (406-1, 406-2, 406-3) and the substrate side walls 401-1, 401-2 need to be formed as accurately as possible, and can be formed faithfully to the substantially vertical photosensitive film pattern. desirable. (In the case of side etching, it is desirable to control the amount of side etching as accurately as possible.) When the substrate is single crystal silicon (so-called silicon wafer), the width w1 of the substrate side walls 401-1 and 401-2 is: Since about 1 μm to 20 μm and the depth of the through hole (or recess) is about 50 μm to 1000 μm, vertical etching with as little side etching as possible is desirable.

An example of such etching is deep RIE (DEEP RIE). For example, there are a method of etching by using high-density plasma, cooling to a low temperature, and a Bosch process method. Various other methods can also be employed in this process. When the through-hole is formed by etching all of the substrate 401, the over-etching is performed about 10%, so that the insulating film 403 is also likely to be removed. (It is left in FIG. 12B.) Therefore, when forming the through hole, a process of completely etching including the insulating film 403 is desirable. In this case, since sufficient over-etching can be performed, a through-hole that completely penetrates to the second surface 401-S2 of the substrate 401 can be formed.

When the through holes are formed, the substrate sidewalls 404-2 and 404-3 have a large aspect ratio and may become unstable. Therefore, the thin plate 410 can be attached to the second surface side in advance. The thin plate 410 is preferably an insulating substrate made of glass, ceramic, plastic, polymer material or the like, but can also be used as a conductive substrate or a semiconductor substrate if the structure or process is devised. The thin plate 410 may be attached after the insulating film 403 is formed on the second surface 401-S2 of the substrate 401. When deep etching is performed on the substrate 401, if the conditions for increasing the etching selectivity between the substrate 401 and the thin plate 410 are used, the amount of etching the thin plate 410 can be reduced, so that a through-hole is also opened in the thin plate 410. There is nothing.

As a method for attaching the thin plate 410 to the substrate 401, for example, various methods such as a method using an adhesive, a room temperature bonding, a high temperature fusion method, or an electrostatic bonding can be used. For example, when the substrate is a silicon substrate, electrostatic bonding can be performed by an anodic bonding method using a glass substrate as the thin plate 410. It is desirable that the photosensitive film 404 is not lost when the substrate 401 is etched. However, if the insulating film 402 is formed, the substrate 401 is not damaged.

Next, the photosensitive film 404 is removed using ashing, a photosensitive film peeling solution, or the like. Thereafter, an insulating film 407 is formed. This insulating film is a silicon oxide film (SiOx), a silicon nitride film (SiNy), a silicon oxynitride film (SiOxNy), or the like, and is laminated by a CVD method or a PVD method. A thermal oxidation method may be used. The insulating film 407 is also laminated inside the through hole 406 (406-1, 2, 3). Next, a conductor film 408 is stacked. The insulating film 407 protects the insides of the through holes 406 (406-1, 2, 3), the substrate side walls 401 (401-1, 2) and the surface of the substrate 401, and electrically connects the conductor film 408 and the substrate 401. Laminated for the purpose of preventing contact. The film thickness of the insulating film 407 is about 0.1 to 2.0 μm. If the above purpose can be achieved, there is no need to laminate. For example, when the substrate 401 is an insulating substrate, the conductor film 408 can be stacked without forming the insulating film 407 after forming the through holes 406 (406-1, 2, 3). The thickness of the conductor film is about 0.1 μm to 2.0 μm. Since it is necessary to laminate the inside of the through hole 406, it is necessary to laminate the surface of the substrate 401 to be thick to some extent.

The conductor film 408 is formed of a metal or alloy such as aluminum, copper, tungsten, nickel, titanium, chromium, gold, silver, zinc, lead, tin, or titanium nitride, tantalum nitride, conductive polycrystalline silicon film, conductive amorphous A silicon film, a conductive polymer, a conductive rubber, or the like. Since it is necessary to laminate also inside the through-hole 406 (406-1, 2, 3), it can laminate | stack by CVD, PVD, ion plating, plating, etc. Next, a photosensitive film 409 is formed and necessary windows are opened. In the through hole 406 (406-2, 3) serving as a capacitor space, the conductor film on the substrate side wall 401 (401-1, 2) side becomes one electrode of the capacitor, and the substrate side wall 401 (401-1, 2) and Since the conductive film on the substrate 401 side that surrounds the opposing through-holes 406 (406-2 and 3) serves as the other electrode of the capacitor, it is necessary to separate these electrodes. The photosensitive film 409 formed on the bottom portions 406-2B and 406-3B of the through holes 406 (406-2 and 3) is removed. In addition, when there is a substrate 401 that connects the substrate side wall 401 (401-1, 2) side and the substrate 401 opposite to the substrate 401, the conductive film 408 is also laminated on this portion. The film 409 is removed. The photosensitive film of the part which becomes the electrode of the capacitor, the wiring part for drawing out the electrode, and the part where other necessary wiring is formed is left. The thickness of the photosensitive film 409 is about 0.1 μm to 3 μm, but the bottom of the through hole may be thicker than these values. It only needs to have a thickness that allows exposure light to enter.

Further, the conductor film 408 in the central through-hole 406-1 is not necessary in this device, so it may be left or removed. When the conductor film 408 in the central through-hole 406-1 is left, the capacitor characteristics are not affected. In the case of an acceleration sensor device, it is better to make the substrate side walls 401-1 and 401-2 heavy, so that they may be left so as not to affect the characteristics of the capacitor. In order to form the photosensitive film 408 so as to be patterned inside the through hole, for example, an electrodeposition method is used. Alternatively, the dry film can be attached to the substrate surface to soften the dry film and put into the through hole. Or a photosensitive film | membrane can also be laminated | stacked by CVD method or PVD method, and can also be formed in the board | substrate side surface inside a through-hole.

After the formation of the photosensitive film, necessary heat treatment or environmental treatment is performed to increase the sensitivity of the photosensitivity, and then exposure is performed. Since it is only necessary to remove the photosensitive film on the bottom of the through hole and the side surface of the through hole (if there is a side surface, there is no side surface if the through hole is connected around), for example, if the photosensitive film is a negative type, Light is irradiated to the photosensitive film formed on the substrate side walls 401-1 and 401-2 and the photosensitive film formed on the side of the substrate 401 facing the substrate side walls 401-1 and 401-2. Light is applied to other areas where the photosensitive film is to be left. If development processing is performed thereafter, the photosensitive film in the portion irradiated with light can be left. The opposite is true for the positive type. Bake necessary after development. The exposure can be performed by an oblique exposure method. (FIG. 12C) Next, the patterned photosensitive film is baked.

Next, the conductor film 408 is etched using the patterned photosensitive film 409 as a mask. Etching is wet or dry etching. FIG. 12D shows a state after the conductive film 408 is etched and the photosensitive film 409 is removed. In the through hole 406-2, 408-1 serving as one electrode of the capacitor and 408-2 serving as the other electrode are formed. In addition, in the through hole 406-3, 408-3 serving as one electrode of the capacitor and 408-4 serving as the other electrode are formed. Further, the conductor film in the central through hole 406-1 is removed. Necessary wiring is connected to each conductor film electrode.

Next, as illustrated in FIG. 12E, an insulating film 411 is stacked on the conductor film 408. The insulating film 411 functions to protect the conductor film 408 and prevent a short circuit between the conductor films separated by moisture or the like. The insulating film 411 is, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNy), a silicon oxynitride film (SiOxNy), etc., and is laminated by a CVD method or a PVD method. The thickness of the insulating film 411 is about 0.5 μm to 2 μm.

Next, as shown in FIG. 12 (f), a thin plate 413 is attached on the substrate 401 so as to close the through hole 406. This adhesion is performed by, for example, an adhesive or normal temperature bonding. In particular, the upper sides of the substrate side walls 401-1 and 401-2 are restricted by the thin plate 413. As a result, the substrate side walls 401-1 and 401-2 become diaphragms whose surroundings are restricted, and the diaphragm is deformed by sound wave vibration and acceleration. The thin plate 413 is preferably an insulating substrate, but a conductive film or a semiconductor substrate can also be used. If, for example, a glass substrate is used as the insulating substrate, the inside of the through hole can be observed. The thickness of the insulating substrate is about 100 μm to 1000 μm, and may be further reduced by polishing or etching. After the bonded substrate is attached as the thin plate 413, the bonded thick substrate may be removed to leave a thin substrate. In this case, it can be made thinner than the above 100 μm, and can be about 10 μm. The thin plate 413 also serves to protect the through hole.

A necessary portion of the thin plate 413 is removed. For example, vent holes 415 (415-1, 2) are formed in the thin plate 413 covering the through hole 406-1. The purpose of these vent holes 415 is to prevent the internal pressure from fluctuating. Alternatively, liquid can be put inside through the vent hole 415. The size of the vent hole 415 is about 1 μm to 10 μm, but the size of the through hole 406-1, the optimum liquid inlet size, the optimum sound wave inlet size, and the optimum vent size may be used. Liquid can be easily put into the through-hole 406-1 by putting liquid from another vent 415-2 while removing air or the like in the through-hole 406-1 from one vent 415-1. After filling the necessary amount of liquid, if the vent hole 415 is closed, then the liquid will not leak outside. Moreover, what is necessary is just to select the optimal magnitude | size of a vent hole also when introduce | transducing a sound wave into the through-hole 406-1.

It is desirable that vent holes 416 (416-1, 2) are also opened in the thin plate 413 covering the through holes 406-2, 406-3. With these vents, the atmospheric pressure in the through holes 406-2 and 3 can be kept constant by the deformation of the substrate side walls 401-1 and 401-2. The size of the vent 416 (416-1, 2) is about 1 μm to 10 μm, but may be appropriately selected according to the size of the through holes 406-2, 3.

Further, the thin plate 413 in the electrode extraction region 417 (417-1, 2) to the outside is also removed. Thereafter, necessary portions of the insulating film 411 are removed, and contact portions 418 (418-1, 2) of the conductor film 408 are formed. Necessary wiring can be connected to the contact 418, wire bonding, or bumps can be connected. The removed portions 415, 416, and 417 of the thin plate 413 are attached to the thin plate 413 and then patterned using a photolithographic method to etch (dry or wet) the necessary portions of the thin plate 413, remove the laser, or remove the liquid jet. It can be removed by etc. Alternatively, a thin plate 413 in which necessary windows are opened in advance may be attached. Alternatively, a vent hole or the like can be provided in the thin plate 410.

As can be easily understood from the above-described device process of the present invention, when the substrate 401 is a semiconductor substrate such as a silicon substrate, it can be mounted together with an IC, a transistor, or the like. Therefore, acceleration and sound waves can be easily detected by directly connecting the device of the present invention to an IC having an acceleration detection circuit, a sound wave detection circuit, and the like. In addition, since the above-described insulating film and conductor film can also be used for those used in ICs and transistors, the same process can be employed, and the load on the process can be reduced, so that an inexpensive sensor can be manufactured. Furthermore, if the concave portion provided in the silicon substrate is used instead of the through hole, the thin plate 410 attached to the second surface 401-S2 is not necessary.

FIG. 13 is a diagram showing another method of forming the electrode of the capacitor. In the embodiment shown in FIG. 13, the substrate is a semiconductor substrate such as silicon. The sensor structure shown in FIG. 13 has a through-hole 431-1 having a rectangular shape (a square cross section, three-dimensionally a rectangular parallelepiped shape) in the center, and substrate side walls 421-1, 2, 3, 4 sandwiched around it. It has a structure in which four through holes 431-2, 3, 4, and 5 are arranged. After the through holes 431 (431-1 to 5-1) are formed in the substrate 421, an insulating film 432 is formed on the substrate 421. Thereafter, a photosensitive film 433 is formed on the insulating film, and the photosensitive film 433 is exposed, developed, and patterned. FIG. 13 shows this state. Thereafter, the insulating film 432 in the opened portion using the patterned photosensitive film 433 as a mask is removed by etching, the substrate 421 is exposed, and a diffusion layer is formed from the exposed portion.

The opening of the photosensitive film 433 is a portion around the through-hole 431 (431-2 to 5) serving as a capacity space and a necessary diffusion layer. FIG. 13 is a plan view (viewed from above parallel to the substrate surface). In the through hole 431-5, the side surface 431-5-1 of the substrate side wall 421-4, the side surface 431-5-2 of the substrate 421 facing this, the side surfaces 431-5-3, 431-5 orthogonal to these side surfaces. There are four substrate sides of -4. Although these side surfaces are covered with an insulating film, the photosensitive film in this portion is opened in order to etch away the insulating films on the side surfaces 431-5-1 and 431-5-2 serving as electrodes. The remaining two substrate side surfaces 431-5-3 and 431-5-4 are not removed by etching, and are therefore covered with photosensitive films 433 (433-5-1 and 433-5-2). There is no substrate 421 at the bottom 431-5-5 of the through hole 431-5.

When the thin plate is adhered, the thin plate exists and the insulating film 432 is formed thereon. In the case where the thin plate is an insulator, even if the insulating film 432 is eliminated, there is no particular problem because the diffusion layer is not conductive even if the diffusion layer is formed. When the thin plate is a semiconductor, the capacitor electrode does not conduct when an insulating film is sandwiched between the thin plate and the substrate 421. When the substrate is not a through-hole but a recess, the substrate 421 is a semiconductor substrate. Therefore, when the insulating film 432 is removed and a diffusion layer is formed, conduction between the electrodes of the capacitor is established, so the bottom 431-5 of the recess 431-5 It is necessary to leave the insulating film 432 on −5. Therefore, a photosensitive film is also formed on the bottom 431-5-5 of the recess 431-5.

On the surface of the substrate 421, the flat surface 421-4-1 on the side surface side of the through hole 431-5 in the substrate side wall 421-4, and the flat surface 421-8 on the side surface side of the through hole 431-5 in the substrate 421-8 opposite thereto. The portion of -1 is opened as shown in FIG. Further, the photosensitive film 433 is also opened in the portions 435 and 436 that are connected to these and become wiring regions. The same applies to the through holes 431-2 to 431-4.

Next, using the photosensitive film 433 as a mask, the insulating film 432 in the portion where the photosensitive film 433 is not present is removed by etching. The insulating film 432 is etched by wet etching or isotropic dry etching. When the insulating film 432 is a silicon oxide film (SiOx), wet etching such as buffered hydrofluoric acid solution (BHF) or diluted hydrofluoric acid solution, or plasma etching using CF4, C2F6 gas, or the like is used. By this etching, a semiconductor substrate (for example, a silicon substrate) is exposed in a portion where the photosensitive film 433 is not present.

Next, the photosensitive film 433 is removed, and an impurity element having a conductivity type opposite to that of the semiconductor substrate is diffused. For example, when the silicon substrate is P-type, N-type phosphorus, antimony, arsenic, etc. are diffused. When the silicon substrate is N-type, P-type boron (B) or the like is diffused. As these diffusion methods, first, after pre-deposition, a diffusion heat treatment is performed, an insulating film containing an impurity element (for example, PSG or BSG) is stacked, a diffusion heat treatment is performed, or ions are implanted and activated. And a method of performing diffusion heat treatment. In the region where the substrate without the insulating film 432 is exposed by the diffusion treatment of these impurity elements (in the case of the ion implantation diffusion method, the insulating film 432 may be left entirely or to some extent). It is formed.

The impurity concentration of this impurity diffusion layer is about 10 × 10 ¹⁹ / cm 3 to 10 × 10 ²² / cm 3 and the resistivity is as small as about 0.02 Ωcm or less, so that it can be used as a wiring or an electrode. As a result, even if no conductor film is formed, in the through holes 431 (431-2 to 5), the side surfaces of the substrate side walls 421 (421-1 to 4) and the side surfaces of the substrate facing these serve as electrodes to form capacitors. it can. For example, the capacitance can be measured by forming capacitors in the side holes 421-4-1 and 421-8-1 in the through hole 431-5 and applying a voltage to the diffusion wiring layers 435 and 436. In the structure shown in FIG. 13, it is not necessary to stack a conductor film as a capacitor electrode.

FIG. 14 is a diagram showing a structure and a manufacturing method when a diffusion layer is used for a capacitor electrode in the sensor of the present invention having an annular structure. This sensor has a central circular through-hole 452-1, a substrate side wall 451-1 surrounding the circular through-hole 452-1, an annular through-hole 452-2 surrounding it, and a thick substrate surrounding it. After the through hole 452 is formed, an insulating film 455 is formed, and a photosensitive film 457 is formed on the insulating film 455. The insulating film 455 is stacked over the entire surface such as the surface of the substrate 451 and the inside of the through hole 452. The photosensitive film 457 is subjected to necessary patterning.

In the present embodiment, the photosensitive film 457 is not formed on the substrate side wall 451-1. (Developed and removed.) (There is also a method of patterning the substrate side wall 451-1 with the photosensitive film 457.) The side surface of the substrate 451-2 surrounding the outside of the through hole 452-2 and In the insulating film 455 formed on the surface, the photosensitive film 457 is patterned. That is, since it is necessary to divide and form an electrode in this part, the photosensitive film 457 corresponding to it is patterned. The photosensitive film 457 is also patterned on the surface of the substrate 451 in order to form wirings and the like. The photosensitive film 457 is removed from the side surface of the substrate outside the through-hole 452-2 and the surface portions 451-2-1, 2, 3,... Of the substrate 451-2 connected thereto, and the photosensitive film 457 is interposed therebetween. Pattern 457-1, 2, 3, 4,... 451-2, 1, 2, 3,... Must not be connected to each other. This is because this portion becomes an electrode of each capacitor.

After patterning the photosensitive film 457, the insulating film 455 is removed by etching. In the embodiment shown in FIG. 14, the insulating film formed on the substrate side wall 451-1 is also removed by etching. Also in the case shown in FIG. 14, since the substrate is a semiconductor (eg, silicon) and the thin plate attached to the back surface of the substrate 451 is an insulator such as a glass substrate or a ceramic substrate, the insulating film 455 is removed at the bottom of the through hole 452. There is no particular problem. (Note that this process can also be performed without attaching a thin plate.) The insulating film in the portion where the photosensitive film 457 is not present is removed, and the semiconductor substrate is exposed. In the subsequent impurity diffusion process, an impurity diffusion layer is formed in a portion where the photosensitive film 457 is absent. Note that when the impurity element is introduced into the semiconductor substrate by ion implantation, part or all of the insulating film may be left. For example, an impurity diffusion layer is formed in 451-2-1, 2, 3,..., And these serve as one electrode of the capacitor. These individual electrodes / wirings are patterned so as not to be connected to each other. The other electrode of the capacitor is the substrate side wall 451-1. A polygonal sensor or the like can also use the impurity diffusion layer as an electrode / wiring with the same structure and method.

FIG. 15 is a diagram showing the structure of the charge storage type sensor of the present invention. This charge storage type sensor can be used for a microphone, for example. The substrate side wall 501 (501-1, 501-2) is surrounded around the central through hole 511 (511-1). Further, a through hole 511 (511-2, 511-3) surrounds the periphery. A thick substrate 501 (501-3, 4) surrounds the through hole. The through holes 511 (511-2, 3) form a capacitor serving as a capacity space, and the electrode is a diffusion layer formed in the substrate 501 shown in FIGS. For example, in the through hole 511 (511-2), the diffusion layer 503 (503-1) formed on the substrate 501 (501-3) and the diffusion layer 503 formed on the substrate side wall 501 (501-1) are two electrodes. Become. In addition, in the through hole 511 (511-3), the diffusion layer 503 (503-2) formed on the substrate 501 (501-4) and the diffusion layer 503 formed on the substrate side wall 501 (501-2) include two electrodes. Become.

Two insulating films 513 and 515 are formed on the diffusion layer 503. The insulating film 513 is a silicon oxide film (SiOx), and the insulating film 515 is a silicon nitride film (SiNx) or a silicon oxynitride film (SiNyOx). Further, a silicon oxide film or a silicon oxynitride film (SiNyOx) may be laminated on the silicon nitride (SiNy) film. By forming a two-layer film or a three-layer film in this way, charges (minus or plus) can be trapped in these films (indicated by 520), and the voltage applied between the capacitors can be lowered. For example, when the change amount of the substrate side wall 501 (501-1, 2) due to the sound wave is small, it is difficult to detect because the capacitance change of the capacitor is small. However, a minute change amount is detected by increasing the voltage level. It becomes possible. However, it is difficult to supply a high voltage from the outside. However, if charges are accumulated in the dielectric film (electret), it is not necessary to supply a high voltage from the outside. The inventive microphone device can be operated.

The voltage is supplied to the diffusion layer 503, which is a capacitor electrode, by pulling out the diffusion layer wiring shown in FIG. Connect with membrane 518. Thereafter, as described above, an insulating film serving as a protective film is laminated, and a thin plate is covered on the through hole 511. As a method for trapping charges in dielectric films (insulator films) 513 and 515 such as a silicon oxide film and a silicon nitride film, an X-ray irradiation method or a corona discharge is used in a process after the silicon oxide film or the silicon nitride film is formed. There is a method using a method. It is to be noted that charge storage is possible even when the insulating film 513 is a silicon nitride film (SiNx) or a silicon oxynitride film (SiNyOx) and the insulating film 515 is a silicon oxide film (SiOx). These insulating films can be formed by thermal oxidation or thermal nitridation, or can be stacked by a CVD method or a PVD method. The thicknesses of these insulating films are preferably 50 nm to 1000 nm for silicon oxide films (SiOx) and 10 nm to 1000 nm for silicon nitride films (SiNx) and silicon oxynitride films (SiNyOx).

The sensor of the present invention can be mounted on a substrate together with an IC and a transistor by using a semiconductor substrate such as silicon as a substrate. Further, the insulating film and conductor film forming process other than the through hole forming process and the thin plate attaching process can be performed simultaneously with the IC and transistor manufacturing process. The through-hole forming process and the thin plate attaching process can also be used for the IC. Therefore, the characteristics of the sensor of the present invention (capacitance characteristics of the capacitor) can be directly connected to the arithmetic processing circuit of the IC to calculate a sound wave signal and acceleration. This can greatly reduce the overall cost as compared with the conventional means in which the sensor and the IC are separately manufactured, mounted on the mounting substrate, and the respective electrodes are connected by wire bonding or the like. . For example, the cost of manufacturing each chip can be reduced, the mounting area can be greatly reduced, and two good products can be determined together, and the yield can be greatly improved.

The sensor of the present invention can be manufactured using an imprint process. FIG. 16 is a diagram showing a manufacturing method of the sensor according to the present invention by an imprint process. The sensor of the present invention described so far uses a semiconductor substrate such as a silicon substrate as a substrate side wall when manufactured in a substrate together with an active device such as an IC or a transistor. In contrast, in this embodiment, a recess is formed in the semiconductor substrate, the recess is filled with a polymer, and a recess (second recess) is formed in the polymer by an imprint method. This second recess corresponds to the through hole (recess) of the acceleration sensor or microphone device described so far.

In FIG. 16A, a region where an active device such as an IC is manufactured in a semiconductor substrate 611 is A, and a region where a sensor of the present invention is manufactured is B. In the region B, the substrate 611 is etched and thinned in the region where the sensor is to be formed. The purpose of this is to make the sensor region and the A region of the present invention at the same level and to easily form a thick polymer.

As shown in FIG. 16A, a recess 614 is formed in B of a region 611 where a piezoelectric device is formed in the substrate. A resist pattern is formed by using a photolithography method or an imprint method, and the concave portion 614 is formed by wet etching or dry etching. An inclined surface 616 (shown by a broken line) may be formed in the concave portion so that the polymer can easily enter the concave portion 614. For example, when the substrate 611 is a (100) silicon substrate, an inclined slope {(111) plane} can be obtained by etching with a KOH solution. Alternatively, isotropic etching is possible with a hydrofluoric acid-based etching solution, and isotropic etching is also possible by dry etching.

Next, as shown in FIG. 16 (b), a polymer 615 is applied and the like is thickly laminated in the recess 614. An insulating film may be formed over the substrate 611 before the polymer 615 is applied. Thereafter, heat treatment is performed to soften, and the convex pattern 619 of the mold 617 is pressed against the polymer 615 as shown in FIG. When the mold 617 is pulled out after the polymer 615 is cured, a recess 621 is formed in the thickly laminated polymer 615 in the recess region 614 in the substrate 611. {FIG. 61 (e)} In this way, a recess (first recess) 614 is formed in the substrate 611, and a recess (second recess) 621 is formed in the polymer 615 applied to this portion, thereby providing a semiconductor substrate. A sensor can be formed in 611.

In FIG. 16 (b), an insulating film may be formed before polymer application to improve the adhesion to the polymer 615 and the like. The polymer 615 may be softened by attaching a sheet-like polymer, and the polymer may be put into the recess 614 in the substrate 611. The depth of the recess (first recess) 614 is determined by the depth of the sensor capacitive space (second recess) or the depth of the central cavity (second recess). When the depth of these second recesses is H1, the depth H0 of the first recess is preferably about 1 to 50 μm deeper than H1. (Strictly speaking, the thickness from the substrate surface is added to H1.)
The polymer 615 is a thermoplastic resin, a thermosetting resin, or an ultraviolet curable resin if classified from the curing system. For example, fluororesin film, polyethylene film, PMMA (polymethyl methacrylate), polycarbonate, polystyrene, acrylic resin, ABS resin, vinyl chloride, liquid crystal polymer, polyvinyl alcohol (PVA), polypropylene (PP), polyethylene (PE), N- Methyl-2-pyrrolidone (NMP), acrylic resin (PMMA), polydimethylsiloxane (PDMS), polyimide resin, polylactic acid, various rubbers (natural rubber and synthetic rubber), or polyvinylidene fluoride (PVDF), vinylidene fluoride Ferroelectric polymers such as trifluoroethylene (VDF / TrFE) copolymer, vinylidene fluoride tetrafluoroethylene (VDF-TeFE), vinylidene cyanide-vinyl acetate copolymer, polar polymers such as nylon-11, etc. of A variety of polymeric materials such as conductive polymers.

A solution in which these materials are dissolved with a solvent or the like is applied and dropped to form a polymer film layer. If necessary, after prebaking or the like, the mold is pushed into the polymer film layer 615. Then, if it is a photocurable resin, it is irradiated with light such as ultraviolet rays to cure the polymer. If it is a thermosetting resin, the polymer is cured by a heat treatment at a temperature higher than the curing temperature, If there is, the polymer is softened once at the softening temperature or higher, and then the polymer is cured by lowering the temperature below the softening temperature. Alternatively, in the case of a heat-softening resin sheet, the polymer is softened at a softening temperature or higher, and then the polymer is hardened at a softening temperature or lower after the mold is pressed.

That is, as shown in FIG. 16C, a mold 617 in which a mold pattern 619 for forming a recess is formed is pressed onto a polymer 615 formed in a recess 614 of a substrate 611. For example, the polymer 615 is a thermoplastic resin (glass transition temperature Tg) and is pushed into the polymer 615 at a temperature higher than Tg. The entire mold 617 may be put into the polymer 615 and pushed in, or may be put into the polymer 615 with a slight gap. In the case of opening a gap, the volume of the polymer 615 changes after curing, and therefore the gap interval is selected in consideration of the volume change. Specific examples of thermoplastic resins include polycarbonate (PC), acrylic (PMMA), polylactic acid (PLA), polyethylene terephthalate (PET), polystyrene (PS), liquid crystal polymer (LCP), polyvinyl chloride (PVC), and polyacetal. (PCM), polypropylene (PP), various rubbers (natural rubber and synthetic rubber), and the like, but are not limited thereto. The polymer 615 may be a thermosetting resin such as a phenol resin, an epoxy resin, a melamine resin, or a polyimide, but it should be noted that once it is cured, it cannot be softened even when heat is applied. In the case of a thermoplastic resin, it can be softened any number of times. For example, even if pattern collapse occurs, it may be softened again and the molding may be pushed in.

After the pattern 619 of the mold 617 is pushed into the polymer 615, the polymer 615 is cured when cooled and lower than Tg. Thereafter, when the mold 617 is pulled up, as shown in FIG. 16E, the pattern 619 of the mold 617 is transferred into the polymer 615 to form the recesses 621 (621-1, 2, 3). If a mold release agent is applied to the mold surface before inserting the mold into the polymer, it becomes easy to separate the mold from the cured polymer after the polymer is cured.

If an ultraviolet curable polymer is used, the polymer 615 can be cured even at room temperature. A UV polymer 615 that cures when irradiated with ultraviolet light is used to push the molds 617 and 619 into the polymer 615 and then cure the polymer 615 through the molds 617 and 619 and / or through the substrate 611 and the insulating film 613. Irradiate light. The light of this wavelength is mostly ultraviolet rays, γ rays, X rays and the like. Therefore, the molds 617 and 619, the substrate 611, and the insulating film 613 are made of materials that can transmit these lights. For example, it is made of glass or quartz. After the polymer 615 is cured by ultraviolet irradiation, when the molds 617 and 619 are pulled out, the recess 621 is formed. A mold release agent may be applied to the surfaces of the molds 617 and 619 before the molds 617 and 619 are put into the polymer 615 so that the polymer 615 does not adhere to the molds 617 and 619 and pattern collapse occurs. Alternatively, the surfaces of the molds 617 and 619 may be coated with a fluororesin or the like. Thereafter, heat treatment may be performed to further ensure the curing.

Thereafter, the polymer 615S formed on the surface of the substrate 611 or the polymer 615B formed on the bottom of the recess 615 may be removed. For example, anisotropic etching using oxygen plasma may be performed on the entire surface of the substrate (the entire surface from the upper surface of the polymer 615). Since the entire surface is anisotropic etching, not only the polymer 615B at the bottom of the recess but also the polymer 615S is etched, so that the thickness of the entire polymer 615 is reduced. The shape of 3) is maintained. However, over-etching is required to remove the polymer 615B at the bottom of the recess throughout the substrate. When the polymer 615B is etched first, the underlying insulating film 613 (the substrate 611 in the absence of the insulating film 613) is exposed. It is not etched, and it is not etched much even in the silicon nitride film system. On the other hand, since the upper surface of the polymer is etched, if the over-etching is performed excessively, the recess depth H1 decreases. Therefore, in order to reduce the over-etching amount, it is necessary to reduce the variation in the anisotropic etching amount of the polymer caused by oxygen plasma and at the same time reduce the thickness of the polymer 615B at the bottom of the recess as much as possible. The variation in the depth of the mold pattern 619 is reduced, the variation in the flatness of the mold body 617 is also reduced, and the mold pressing pressure is made uniform over the entire substrate. In order to make the press pressure of the mold uniform over the entire substrate, the mold pattern 619 is preferably disposed uniformly over the entire substrate. Further, when the polymer 615B at the bottom of the concave portion is etched and the base begins to be exposed, reactive species such as CO are reduced, and the end point can be determined by sensing the amount thereof.

The concave portion 621-1 formed in the center is for introducing sound waves if it is a microphone, and is a portion that receives acceleration or a portion that contains liquid if it is an acceleration sensor. The polymer substrate side walls 615-1 and 615-2 are disposed so as to surround the central recess 621-1. The polymer substrate side walls 615-1 and 615-2 become diaphragms that are deformed by sound waves or acceleration. There are recesses 621-2 and 621-3 serving as capacity spaces on the outside, and polymer substrates 615-3 and 615-4 exist surrounding the capacity space. Since these polymer substrates 615-3 and 615-4 are regulated by the semiconductor substrate 611, they are hardly deformed even by acceleration or sound waves. Thus, the sensor of the present invention using the recess (second recess) formed in the polymer formed in the substrate recess (first recess) has the through holes and recesses formed in the substrate described above. The structure of the sensor of the present invention using the same is the same. In addition, although the recessed part in a polymer was formed by the imprint method, it cannot be overemphasized that it can also form with the normal photolitho method and an etching method.

The subsequent process is the same as the sensor manufacturing process of the present invention described so far. That is, as shown in FIG. 16F, the insulating film 623 is formed over the recess 621 and the substrate. This insulating film is formed of a silicon oxide film, a silicon nitride film, a silicon oxynitride film or the like by a CVD method or a PVD method. The thickness of the insulating film is about 0.1 μm to 1.0 μm. Next, a conductor film 625 is laminated and subjected to desired patterning to form electrodes / wirings 625 (625-1, 2, 3, 4). The conductor film 625 is made of metal such as aluminum, copper, iron, zinc, gold, platinum, titanium, tungsten, molybdenum, chromium, tantalum, lead, tin, or an alloy thereof, other various alloys, or a conductive polymer. It is formed by PVD method, CVD method, ion plating method, plating method or the like. The insulating film 623 is for the purpose of improving the adhesion with the conductor film 625 and ensuring the insulating property. However, since the polymer 615 is an insulator, the insulating film 623 is unnecessary if these purposes can be achieved. The thickness of the conductor film is about 0.1 μm to 2.0 μm. As described above, the patterning of the conductor film can be performed by an electrodeposition method, a method using a photosensitive sheet, a method of forming a photosensitive film by a CVD method or a PVD method, or a normal coating method. it can.

In the recess 621-2, a capacitor is formed by the electrodes / wirings 625-1 and 625-2. In the recess 621-3, a capacitor is formed by the electrodes / wirings 625-3 and 625-4. Next, an insulating film 627 is stacked. This insulating film is used to protect the conductor film 625, and is deposited by a CVD method or a PVD method using a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like. The insulating film has a thickness of about 0.1 μm to 2 μm. Next, a thin plate 629 is attached to cover the recess 621. Necessary openings and vent holes 631 and 632 are formed. A thin plate 629 in which openings and vent holes 631 and 632 are formed in advance may be attached. The thickness of the thin plate is preferably about 0.05 mm to 1 mm before adhesion, but can be further reduced by polishing or a method using a bonded substrate after adhesion.

In the region of the thin plate opening 632 on the surface of the substrate 611, if necessary, a window is opened in the insulating film 627 to form a contact hole 633. Rewiring may be performed in the contact hole, or a wire bond or bump may be formed to connect to another device. The conductor film 625 can also be used with other devices (transistors, ICs, resistors, etc.) fabricated on a semiconductor substrate, so that the sensor electrode / wiring of the present invention can be directly connected to the wiring of these devices. is there.

In the capacitor of the present invention formed in a polymer, the (polymer) substrate sidewalls 615-1 and 615-2 are a polymer, and therefore the Young's modulus is very small compared to a semiconductor substrate such as silicon. (Young's modulus of silicon is about 130 GPa, polymer is about 0.1 to 5 GPa, rubber is about 0.01 to 0.1 GPa) As can be seen from the above-described formula {y0 = β * F * s ⁴ / (Et ³ )}, the substrate Since the amount of deformation of the side wall is inversely proportional to the Young's modulus, the amount of change in the capacitor capacity can be increased by using a material having a small Young's modulus. Alternatively, the size can be reduced to achieve the same amount of change. For example, since the Young's modulus of PET is about 3 GPa, it is 1/40 of the Young's modulus of silicon (about 130 GPa).

It goes without saying that the sensor manufacturing method of the present invention using the imprint method shown in FIG. 16 can be used not only for the polymer in the recess made in the substrate but also for the polymer made on the substrate.

FIG. 18 is a diagram showing another embodiment of the acceleration sensor of the present invention. In this embodiment, a conductive substrate is used as a substrate, a through hole is formed in the conductive substrate, and the through hole is covered with upper and lower insulator substrates (thin plates). As shown in FIG. 18A, which is a plan view parallel to the conductor substrate 711, the substrate sidewall 711 (711-2) of the conductor substrate and the substrate sidewall 711 (711-3) of the conductor substrate are arranged in parallel. The through-holes 712 (712-1) between the substrate side walls serve as a capacitance space, and the substrate side walls 711 (711-2) and 711 (711-3) opposed to each other across the space serve as electrodes to form a capacitor. To do.

FIG. 18B is a view showing a cross-sectional view in a direction 717 perpendicular to the substrate side walls 711 (711-2) and 711 (711-3) in FIG. An insulating substrate 713 is attached to the lower surface of the substrate side walls 711 (711-2) and 711 (711-3), and an insulating substrate 714 is attached to the upper surface. Insulator substrate 714 has contact holes 716 and 718 formed in part of the region adhering to each of substrate side walls 711 (711-2) and 711 (711-3), and in and on the contact holes, respectively. Conductor films 717 and 719 are formed to form electrodes and wirings. (In FIG. 18A, the contact hole 7 and the conductor film are indicated by broken lines.) Each of the substrate side walls 711 (711-2) and 711 (711-3) is a sensor package (sensor PKG) across the through hole 712. Frame substrate 711 (711-1).

As can be seen from FIG. 18, the substrate side walls 711 (711-2), 711 (711-3), and the frame substrate 711 (711-1) are completely separated in the substrate 711, and the upper and lower surfaces are insulator substrates. 714 and 713 are attached. Therefore, these board | substrate side walls 711 (711-2), 711 (711-3), and the frame board | substrate 711 (711-1) are not electrically connected. When no acceleration is applied, since the opposing surfaces of the substrate side wall 711 (711-2) and the substrate side wall 711 (711-3) are parallel, the substrate side wall 711 (711-2) and the substrate side wall 711 (711-3). ) Is a parallel plate type capacitor electrode having an inter-electrode distance d of d1. The substrate side wall 711 (711-2) serving as one electrode is connected to the conductor film electrode / wiring 717 through the contact hole 716, and the substrate side wall 711 (711-3) serving as the other electrode is connected to the conductor film through the contact hole 718. Since the electrode / wiring 718 is connected, the capacitance C can be measured by applying a constant voltage to the conductor film electrode / wiring 717 and the conductor film electrode / wiring 718. The capacitance C0 when the inter-electrode distance d is d1 is C0 = ε · ε0 · S0 / d, where the electrode area is S0. (If the length of the substrate side wall is k, S0 = ke.)

When a force is applied to the substrate side wall 711 (711-2) by receiving acceleration in a direction perpendicular to the side surface of the substrate side wall 711 (711-2) (direction 717), only the upper and lower surfaces of the substrate side wall 711 (711-2) are applied. Restricted by the insulating substrates 714 and 713 (there are no other restrictions), and the thickness (width) n (n1) of the substrate side wall 711 (711-2) is thin (thinner than the substrate thickness e). Is a silicon substrate, and when e = 500 μm, about 100 μm or less), the substrate side wall 711 (711-2) is curved. The thickness (width) m (m1) of the substrate sidewall 711 (711-3) facing the substrate sidewall 711 (711-2) is thick (thick with respect to the substrate thickness e. For example, the substrate is a silicon substrate, e = 100 μm or more when 500 μm), there is almost no change with respect to the deformation amount of the substrate side wall 711 (711-2). Accordingly, the inter-electrode distance d changes from d1, and for example, in FIG. 18, if the acceleration is to the left, d <d1 is satisfied, so that the capacitor capacity is large, and if the acceleration is to the right, d> d1 is satisfied. Become. (Note that since the substrate side wall 711 (711-2) is curved, d is not constant, and the capacitance is calculated by integrating and calculating the acceleration magnitude from the actual measurement value.)

The conductor substrate 711 is, for example, a silicon substrate having a high impurity concentration. In an N-type silicon substrate, when the impurity concentration is 10 ¹⁹ / cm 3 or more, the resistivity becomes 0.01 Ωcm or less, so that it can be considered as a conductor substrate. In addition, when the impurity concentration is 2 × 10 ¹⁹ / cm 3 or more in the P-type silicon substrate, the resistivity becomes 0.01 Ωcm or less, so that it can be considered as a conductor substrate. Alternatively, other semiconductor substrates having low resistivity can be used. Alternatively, the conductive substrate 711 is a metal or alloy such as copper, aluminum, iron, titanium, nickel, zinc, lead, tin, silver, gold, tungsten, molybdenum, tantalum, or cobalt. Alternatively, the conductive substrate 711 can be made of conductive polymer, graphene, carbon nanotube, or the like. Even when the substrate is not a conductor substrate, a pressure sensor having a similar structure can be manufactured by forming a through groove and then laminating a conductor film around the through groove.

The acceleration sensor shown in FIG. 18 can detect only acceleration in one direction. However, if a sensor having such a structure is formed in various directions, acceleration in various directions can be detected. For example, if the capacitors on the substrate side walls 711-2 and 711-3 are arranged in a variety of directions as a set and surrounded by a frame such as the frame substrate 711-1, the capacitors in various directions are arranged. An acceleration sensor PKG that detects acceleration can be manufactured. Incidentally, if a vent hole 721 is formed as shown in FIG. 18B, the pressure difference from the outside can be eliminated. For example, the internal atmospheric pressure may change due to acceleration, but these changes can be reduced. However, when the intrusion of moisture or the like is expected, a completely sealed through-hole space 712 can be produced without opening such a vent hole 721, so that an acceleration sensor PKG having excellent environmental resistance can be realized. In order to eliminate the internal pressure change, the through-hole space 712 may be completely sealed in a vacuum. This can be realized by performing a process (attachment step) in a vacuum when the thin plates 713 and 714 are attached to the substrate 711 and sealed.

Reference numeral 715 shown by a broken line denotes a scribe line. For example, a large number of acceleration sensors PKG of the present invention are connected to a silicon wafer (the pattern shown in FIG. It should be.

FIG. 19 is a diagram showing another embodiment of an acceleration sensor using a conductive substrate. Although this embodiment is similar to the embodiment described with reference to FIG. 9, since a conductor substrate is used, it is not necessary to form a conductor film on the substrate side wall. Therefore, the process is very simple as in the case described with reference to FIG. As shown in FIG. 19, a prismatic through hole 732 (732-1) having a rectangular cross section (preferably a square cross section) is present at the center, and around the through hole 732 (732-1). A substrate side wall 731 (731-2) having a similar shape is surrounded, and a through hole 732 is surrounded around the substrate side wall 731 (731-2). A thick substrate sidewall 731 (with a through hole 732 sandwiched between each of the four surfaces 731-2 (731-2-1, 2, 3, 4) of the substrate sidewall 731 (731-2) having a rectangular cross section. 3, 4, 5, 6) are arranged. These substrate side walls 731-2 (731-2-1, 2, 3, 4) and thick substrate side walls 731 (3, 4, 5, 6) serve as counter electrodes, and through holes 732 (732-2, 3, 4). 5) is formed.

Since the substrate side wall 731-2 (731-2-1, 2, 3, 4) has a small thickness (width), the substrate side wall 731-2 (731-2-1, 2) is deformed by a force accompanying acceleration. 3, 4) and the substrate side wall 731 (731-3, 5, 4, 6) opposed to each other have a large thickness (width) and are hardly deformed by a force accompanying acceleration, so that the capacitances of these capacitors change. Insulator substrates (thin plates) 739 and 738 are attached to the top and bottom of the substrate 731, and contact holes opened in the insulating substrate (thin plates) 739 attached on the substrate side walls 731 (731-3, 5, 4, and 6). 736 (736-2, 3 etc.) laminated and patterned conductor film / electrode / wiring 737 (737-2, 3 etc.) and insulating substrate (thin plate) 739 attached on the substrate side wall 731-2. When a constant voltage is applied between the conductive film / electrode / wiring 737 (737-1) stacked and patterned in the contact hole 736 (736-1), the individual capacitance changes of these capacitors are measured. it can.

Since four capacitors shown in FIG. 19 are arranged at intervals of 90 degrees, acceleration can be reliably detected in these four directions. In other directions, the direction of acceleration can be accurately detected to some extent by comparing the capacitances of the capacitors. In order to obtain the orientation more accurately, the polygonal shape may be used instead of the rectangular shape. In order to prevent the substrate side wall 731 (731-3, 4, 5, 6) having a thick side wall from being deformed as much as possible by acceleration, as shown in FIG. For example, it is preferable to increase the adhesion area between the substrate side wall and the insulating substrates 738 and 739 by expanding the region to the region shown by a broken line. The frame substrate 731 (731-1) surrounds the through hole 732 outside the substrate side wall 731 (731-3, 4, 5, 6) having these thick side walls. If necessary, vent holes 741 and 742 may be formed in the through holes as shown in FIG. (FIG. 19B is a cross-sectional view taken along the alternate long and short dash line 735 in FIG. 19A. However, in FIG. 19A, air holes, contact holes, conductor films / electrodes / wirings are not shown. Not.)

By putting a heavy liquid in the central through-hole 732-1, the acceleration detection sensitivity can be increased as described above. Since the substrate side wall 731-2 (731-2-1, 2, 3, 4) is entirely at the same potential, there is no problem even if the liquid has conductivity. Since the force (F = mα) against the weight of the liquid acts on the substrate side wall 731-2 (731-2-1, 2, 3, 4), the amount of deformation due to acceleration increases.
In FIG. 19, four thick substrate side walls are used, but it is natural that acceleration can be detected by one, two, or three of them.

The structure shown in FIG. 19 can also be used for a microphone device by adopting a structure similar to that shown in FIG. That is, by introducing a sound wave into the central through hole 732, the substrate side wall 731-2 (731-2-1, 2, 3, 4) is vibrated, and the substrate side wall 731-2 (731-2) is accompanied by the vibration. The capacitance of the capacitor changes between −1, 2, 3, 4) and the substrate side wall 731-3, 5, 4, 6) facing this. Sound waves can be detected by measuring this signal change. That is, it becomes a microphone device. An opening for introducing a sound wave is provided in part or all of the insulating substrate 738 or 739 covering the central through hole 732-1 so that the sound wave is effectively introduced into the through hole 732-1. In addition, it is desirable to provide an air vent hole in the through hole 732 (732-2, 3, 4, 5, 6) outside the substrate side wall 732 so that the oscillated air can easily escape. However, when the through-hole 732 (732-2, 3, 4, 5, 6) is vacuum, there is no air vibration, so (naturally) such a hole is not necessary. In the case of the microphone device, the thick substrate side wall 731 (3, 4, 5, 6) may be one, two, or three. Further, even when these substrate side walls are connected, sound wave detection is possible. Further, the frame substrate 731-1 may be connected to these substrate side walls. In addition, since the acceleration force is not applied to the microphone ohon device, it is not necessary to make it too thick, so that the substrate side wall and the frame substrate can be made small.

FIG. 20 is a diagram showing another embodiment of the acceleration sensor of the present invention. In the present embodiment, the central through hole has a cylindrical shape with a circular cross section, and its radius is r1. A substrate side wall 751 (751-2) having a circular cylindrical shape with a radius r2 in cross section surrounds the periphery. Therefore, the thickness (width) of the substrate side wall 751 (751-2) is r2-r1. A through hole 752 (752-2) having a circular cylindrical shape with a radius r3 in cross section surrounds the periphery. The through hole 752 has a cylindrical shape with a circular cross section on the inner surface, and is surrounded by a thick substrate side wall 751 (751-3, 4, 5, 6, 7, 8, 9, 10) divided into several parts. It is out. A through hole 752 surrounds these substrate side walls 751 (751-3, 4, 5, 6, 7, 8, 9, 10), and a frame substrate 751 (751-1) surrounds them. Is a planar structure, but the cross-sectional structure is the same as that of Fig. 18 and Fig. 19. The substrate 751 is a conductor substrate, and has one circular electrode 751-2 and a circular side surface with a radius r3 facing it. The substrate side wall 751 (751-3, 4, 5, 6, 7, 8, 9, 10) which is an electrode forms a capacitor having a capacitance space of 752-2.

When there is no acceleration, the substrate side wall 751-2 is not deformed, and the distance between the capacitor electrodes is r3-r2. When the acceleration is received, the annular substrate side wall 751-2 is deformed. Since the deformation of the substrate side wall 751-2 in the acceleration direction becomes large, of the thick substrate side walls 751 (751-3, 4, 5, 6, 7, 8, 9, 10) facing the large deformation portion. The capacitance of one of the capacitors changes greatly. This direction of change is the direction of acceleration, and the magnitude of acceleration can be found from the amount of change in the capacitance of the capacitor. However, with this alone, the direction of acceleration is one of the divided substrate side walls 751 (751-3, 4, 5, 6, 7, 8, 9, 10), and has a certain width. Therefore, in order to know a more accurate direction, it is possible to obtain the capacitance by comparing the capacitance of the adjacent substrate side wall electrodes. In order to know more accurately, the outer electrode facing the annular electrode 751-2 may be divided more finely. In FIG. 20, it is divided into eight. Further, as described above, if a heavy liquid is put in the central through hole, the deformation amount of the substrate side wall 751-2 becomes large, so that the detection sensitivity to acceleration can be increased.

If r1 = 100 μm, r2 = 20 μm, r3 = 150 μm, and the overall package size (frame substrate size) is 0.5 mm × 0.5 mm × 0.4 mm (thickness), about 60,000 acceleration sensors A chip package can be obtained.
The structure shown in FIG. 20 can also be used for a microphone device. That is, the cylindrical through hole 752-1 may be a sound wave introduction hole. The outer counter electrode may not be divided. Furthermore, since it can be connected to a frame substrate and there is no need to consider deformation due to acceleration, the outer counter electrode can be made smaller, so the size of the frame substrate, that is, the chip PKG can also be made smaller.

Next, a process for producing a force sensor of the present invention using a conductive substrate will be described. FIG. 21 shows a manufacturing method of a process for producing a force sensor of the present invention using a conductive substrate. As shown in FIG. 21A, the conductor substrate 811 has an upper surface (first surface) 811-S and a lower surface (second surface) 811-B. An insulator substrate 813 is attached to the lower surface 811 -B of the conductor substrate 811. In the case where it is not possible to adhere directly to the conductor substrate 811 (for example, when the adhesiveness between the adhesive and the substrate is insufficient), the insulator substrate 813 is attached after the insulating film 812 is laminated, for example. This adhesion method includes a method using an adhesive, a room temperature bonding method, a high temperature (fusion) bonding method, or an electrostatic bonding (anodic bonding). The thickness of the conductor substrate 811 is determined by the characteristics of the force sensor (the amount of deformation of the substrate side wall) and the like, for example, a thickness of 0.1 mm to 2.0 mm. The insulating film 812 is a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like.

The insulator substrate 813 serves to hold the substrate side wall when the through hole is formed. It also serves as an etching stopper when the through hole is formed by etching. Next, a photosensitive film 815 for forming a through hole is patterned on the upper surface 811-S of the conductor substrate 811. A photosensitive film 815 is formed on the conductor substrate 811 and a region for forming a through hole is opened by a photolithography method. The photosensitive film is left in the region where the substrate side wall is formed. When the photosensitive film 815 cannot be directly formed on the conductor substrate 811 (for example, when the adhesion between the photosensitive film 815 and the conductor substrate 811 is poor, or when the photosensitive film 815 is not etched when forming the through-hole, or the pattern shape An insulating film 814 may be formed over the conductor substrate 811. The thickness of the photosensitive film 815 is also determined by the etching selection ratio between the conductive substrate 811 and the photosensitive film 815 at the time of forming the through hole. However, when the etching selection ratio is m, the thickness of the conductive substrate 811 is 1 / m. The above thickness is required. For example, when the thickness of the conductor substrate 811 is 500 μm and m = 50, the thickness of the photosensitive film (the thickness of the photosensitive film 815 after the heat treatment after patterning, that is, the thickness immediately before etching) needs to be 10 μm or more.

After the photosensitive film 815 is patterned and heat-treated to cure the photosensitive film 815, the conductor substrate 811 in the opening without the photosensitive film 815 is etched. This etching is desirably anisotropic etching and is formed according to the pattern of the first photosensitive film 815. The pattern of the photosensitive film 815 is also preferably a vertical or nearly vertical shape, and the conductor substrate 811 is etched to a vertical or nearly vertical shape. When the insulator film 814 exists, the insulator film 814 is also preferably etched into a vertical pattern shape. When the conductor substrate 811 is a silicon substrate (low resistance), a Bosch method, an inductively coupled plasma RIE method (ICP-RIE), an electron cyclotron resonance RIE (ECR-RIE) method, or the like can be used. FIG. 21B is a schematic sectional view after etching.

When the conductor substrate 811 is completely etched in the depth direction (perpendicular to the substrate surface), the insulator substrate 813 is exposed. (When the insulating film 812 is interposed, the insulating film 812 is exposed, and when the insulating film 812 is etched in the depth direction by over-etching, the insulating substrate 813 is exposed.) The conductive substrate 811 and the insulating substrate Since 813 (or the insulating film 812) is a different material, if the conditions such as the etching gas are appropriately selected, the etching selection ratio between the conductor substrate 811 and the insulator substrate 813 (this is n) is sufficiently large. I can take it. Usually, to completely form through holes (all through holes in the substrate), 5% to 20% of the substrate thickness is necessary as overetching. For example, if the substrate thickness is 500 μm, the thickness is 25 μm to 100 μm. It is calculated that the substrate 811 is etched. If n = 50, it is calculated that the insulating substrate is etched by 0.5 μm to 2 μm by over-etching. Since the thickness of the insulator substrate 813 is 10 μm to 500 μm, preferably 50 μm to 200 μm, no hole is opened in the insulator substrate. In the case where the insulating film 812 is provided, the thickness of the insulating film 812 is approximately 0.1 μm to 2 μm, and thus the insulating film 812 may be entirely etched.

Through holes 816 (816-1, 2, 3, 4) are formed by etching the conductive substrate 811. These through holes 816 (816-1, 2, 3, 4) correspond to, for example, the through holes 732 (732-1, 2, 3) and 732 in FIG. Further, the substrate side walls 811 (831-1, 2, 3, 4) correspond to, for example, the substrate side walls 731-2, 731-3, 731-5, 731-1 in FIG. After the through hole 816 is formed, the photosensitive film 815 is removed, and the insulating film 814 is etched if necessary. Thereafter, as shown in FIG. 21 (c), an insulating film 818 is laminated to protect the surface of the conductor substrate 811 (including the exposed substrate surface in the through hole), if necessary, and the insulator substrate 821 Is attached to the upper surface of the substrate 811. This attachment method can also be performed in the same manner as the attachment method of the insulator substrate 813. The thickness of the insulating film 818 is about 0.1 μm to 2.0 μm. The insulating film 814 may be removed by etching, and the insulating substrate 818 may be directly attached to the conductor substrate 811 without stacking the insulating film 818. For example, when the conductor substrate 811 is a silicon substrate and the insulator substrate is a glass substrate, it can be firmly attached by anodic bonding.

Next, as shown in FIG. 21D, contact holes 823 (823-1, 2) are opened in the insulating substrate 821 and the insulating films 818, 814, and the upper surface of the conductive substrate 811 is exposed. A conductor film is laminated in these contact holes 823 to form a conductor film / electrode / wiring pattern 824 (824-1, 2). A capacitor having a capacitance space as a through hole 816 (816-2) is formed between these two conductor films / electrodes / wiring patterns 824 (824-1, 2). In addition, vent holes 822 (822-1, 2) to the through holes 816 can be formed in the insulator substrate. As a method for forming a contact hole or a vent hole in the insulator substrate 821, there is a method of forming by dry etching or wet etching using a photolithography method. When the insulator substrate 821 is a glass substrate, dry etching includes plasma etching using a gas such as CF4 or C2F6. In wet etching, etching can be performed using an HF-based etchant. Alternatively, there is a method of opening a window on the insulator substrate using a laser or high-pressure water flow. An insulator substrate in which contact holes and vent holes are formed in advance may be attached. According to this method, the process of forming the contact hole and the vent hole in the insulator substrate is a separate process, so there is an advantage that the process time can be shortened. Further, the air hole 825 can be formed in the insulator substrate 813.
A sensor (for example, an acceleration sensor or a microphone device) using the conductor substrate of the present invention can be manufactured by the process as described above. Since this process is very short, the process cost is also very low.

FIG. 22 is a diagram showing a method of forming a sensor of the present invention using an insulator substrate or a semiconductor substrate. The difference from FIG. 21 is the use of a process for forming a conductor film to be a capacitor electrode / wiring, but the process is very simple. Since there are many processes similar to those in FIG. 21, a detailed description of the processes is omitted, but can be easily inferred from the contents described in FIG. As shown in FIG. 22A, a support substrate 913 is attached to the lower surface 911-B of the substrate 911. If necessary, an insulating film 912 is interposed. A photosensitive film 915 is formed on the lower surface 911-S of the substrate 911, and patterning for forming a through hole is performed by a photolithography method. If necessary, an insulating film 914 is interposed. The photosensitive film 914 is formed by attaching a photosensitive sheet film (dry film) or applying a photosensitive film and then heat-treating (pre-baking). The substrate 911 is an insulator substrate or a semiconductor substrate. (A conductor substrate may be used, but in the case of a conductor substrate, the process can be performed by the method illustrated in FIG. 21.) As an insulator substrate, for example, a glass substrate, a quartz substrate, a ceramic substrate, a polymer resin substrate, a plastic substrate, rubber Such as a substrate. As a semiconductor substrate, for example, a silicon substrate, a germanium substrate, a single element substrate such as a carbon (including diamond, graphene, carbon nanotube, etc.) substrate, silicon carbide (SiC), silicon germanium (SiGe), gallium arsenide (GaAs), indium Binary element substrates such as phosphorus (InP) and gallium nitride (GaN), and other ternary or higher multi-element substrates.

Next, as shown in FIG. 22B, the substrate 911 is etched to form through holes 916 (916-1, 2, 3, 4). Thereby, the substrate side walls 911 (911-1, 2, 3, 4) can be formed. Next, after removing the photosensitive film 915, an insulating film 918 is laminated on the substrate 911 as shown in FIG. The insulating film 914 may be removed or may be left. The insulating film 918 is a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or the like, and is formed by a CVD method, a PVD method, a thermal oxidation method, or a thermal nitridation method. In the case where the substrate 911 is an insulator substrate and adhesion with a conductor film to be formed later is good, this insulating film 918 may not be formed. The thickness of the insulating film 918 is 100 nm to 2000 nm. An insulating film is also formed in the through hole 916. Next, a conductor film 919 is stacked. The conductor film 919 is made of, for example, low resistance polycrystalline silicon (PolySi), various silicide films, various metal films, various alloy films, conductive polymers, conductive rubber, conductive carbon (including conductive carbon nanotubes and graphene). Yes, by CVD, PVD, ion plating, plating, etc. The thickness of the conductor film 919 is 100 nm to 2000 nm. The conductor film 919 is also laminated inside the through hole 916, but it is desirable to be laminated on the entire side surface of the through hole 916.

The conductor film 919 is also stacked on the bottom portion 932 of the through hole 916, but the conductor film 919 in this portion needs to be removed by etching. As the method, a photosensitive film 930 is formed as shown in FIG. 22C, and the photosensitive film is patterned so that the photosensitive film 930 does not exist in the through hole 916 portion. As this method, for example, a photosensitive dry film 930 is attached on the conductor film 918 on the substrate 911 so that the photosensitive film 930 does not exist in the through hole 916 portion by photolithography. In the case where the photosensitive dry film 930 is a negative type, light may be irradiated to the portion where the photosensitive film 930 is left, that is, the upper surface of the substrate side wall (the upper surface of the substrate). In the case where the photosensitive dry film 930 is a positive type, light may be irradiated to a portion where the photosensitive film 930 is removed, that is, the photosensitive film 930 covering the upper portion of the through hole. In the case of a dry film, the film thickness does not become too thick even at the upper part of the through hole, and does not enter the through hole so much even if prebaked (heat treatment performed before exposing the photosensitive film).

In the case where the photosensitive film 930 is a coating film or a dip film, the photosensitive film enters the through hole 916 and is thickened by the through hole 916. Therefore, the negative type photosensitive film (resist) is good, and it is only necessary to expose the upper surface of the substrate having a stable thickness, and it is not necessary to expose the through hole 916 having the thick photosensitive film. A desired pattern can be formed. Since the conductor film 919 needs to be patterned as an electrode and wiring on the upper surface of the substrate, a pattern for that purpose is also formed. In the case of a positive type photosensitive film (resist), it is necessary to expose the thick resist in the through hole 916, so that the photosensitive film in the through hole is removed by irradiating light with a large depth of focus. can do.

Next, as shown in FIG. 22D, a heat treatment for dripping the edge of the photosensitive film 930 is performed. By this heat treatment, the photosensitive film 930 that covers the upper surface of the substrate side wall 911 (911-1, 2, 3, 4) or the like is softened, and the edge of the photosensitive film 930 hangs down to pass through holes 916 (916-1, 2). 3, 4) to cover the conductive film 919 stacked on the inner surface side (indicated by a hanging photosensitive film 931). The softening temperature of the resist is, for example, 150 ° C. to 200 ° C., and the edge of the photosensitive film 930 can be dripped by heat treatment at a temperature higher than this temperature. Thereafter, the conductive film is anisotropically etched perpendicularly to the substrate surface from the upper surface side of the substrate 911. For example, when the conductor film is aluminum, vertical etching (anisotropic etching) can be performed with a salt taeba base gas (for example, Cl 2 or BCl 3) using a reactive ion etching (RIE) apparatus. For example, when the conductor film is tungsten silicide or low resistance PolySi, vertical etching (anisotropic etching) can be performed by using a reactive ion etching (RIE) apparatus, for example, with a halogen-based gas (for example, Cl2, SF6, HBr).

By this vertical etching of the conductive film, the conductive film 919 stacked on the bottom 932 in the through hole 916 is removed by etching. Of course, the portion of the conductor film covered by the photosensitive film 930 is not etched. The conductor film laminated on the inner surface of the through-hole 916 is not coated with a photosensitive film, but is perpendicular to the substrate surface, so it is not etched from the lateral direction. It remains without being. If there is no photosensitive film, the conductive film 919 existing on the inner side surface of the through hole is naturally etched, but the vicinity of the edge of the photosensitive film 930 is drooping, and the conductive film 919 in this portion is dripped. Since this is covered with the photosensitive film 919, this portion is not etched either. Even if etching ion species enter the through-hole 916 in the vertical direction, the drooped portion 931 serves as a mask, and the conductor film 919 covering the side surface of the through-hole 916 is not etched. Note that if the photosensitive film pattern formed on the upper surface of the substrate side wall 911 is formed slightly larger, the wrinkle region on the inner side surface of the through hole 916 increases, so that the conductor film 919 laminated on the inner side surface of the through hole 916 has After all it becomes difficult to be etched. Also in this case, if the heat treatment for dripping the photosensitive film is performed, the conductive film 919 on the upper inner surface of the through hole 916 can be reliably covered with the photosensitive film.

Even if it is not a conductor substrate, the planar pattern is the same as the shape shown in FIG. 18A, FIG. 19A, and FIG. 20, so that after laminating the conductor film 919, the substrate side wall (capacitor electrode) For example, the conductor film 919 on 911-1 and 911-3) is connected only at the bottom of the through hole 916. Therefore, since the conductive film 919 at the bottom of the through hole 916 is removed by the anisotropic etching of the conductive film described above, the conductive material on the substrate side walls (for example, 911-1 and 911-3) to be the capacitor electrodes The membrane 919 separates.

Thereafter, the photosensitive film 930 is removed, and the insulator film 920 is stacked. (If a conductor film is laminated by selective CVD or plating before forming the insulating film 920, a small gap in the conductor film received during etching can be filled with the conductor film. The damage received by the film can be recovered (a conductive film formed by selective CVD or plating is not laminated in a large gap so that a non-conductive pattern does not conduct). SiOxNy, SiNy, which are laminated by CVD or PVD, have a film thickness of 0.1 μm to 2 μm, and protect the conductor film 919 chemically, physically and environmentally. Thus, (FIG. 22E) necessary contact holes 924 (924-1, 2), conductor films / electrodes / wirings 923 (923-1, 2), and vent holes 922 are formed. The sensor UNA structure is fabricated a number in the substrate 911, if chip the dicer (dicing), can be prepared a number of sensor chips PKG. (FIG. 22 (f))

By using this process as described above, the sensor of the present invention can be manufactured by a simple process even if an insulator substrate or a semiconductor substrate is used. Since a semiconductor substrate such as silicon is used in this process, the sensor can be manufactured by a process together with an IC and a transistor.

FIG. 23 is a diagram showing a method of manufacturing the sensor of the present invention using a semiconductor substrate such as silicon. In the following description, it is assumed that the semiconductor substrate is a silicon substrate. As shown in FIG. 23A, diffusion layers 952 are formed on both sides of the silicon substrate 951. When the silicon substrate is a P-type wafer, the diffusion layer may be either N-type or P-type, and when the silicon substrate is an N-type wafer, the diffusion layer may be either P-type or N-type. The impurity concentration of the diffusion layer 952 is desirably 10 ¹⁹ / cm ³ or more. The diffusion layer 952 can be formed by, for example, a method of performing heat treatment after ion implantation or a method of performing diffusion heat treatment by pre-deposition. Note that the diffusion layer 952 on the back surface is not particularly necessary and may not be formed.

Next, as shown in FIG. 23B, a support substrate 954 is attached to the back surface of the silicon substrate 951. If necessary, an insulating film 953 may be interposed. A photosensitive film 956 is formed on the upper surface of the silicon substrate 951, and a window for forming a through hole is opened. If necessary, an insulating film 955 may be interposed. Through holes 965 (965-1, 2, 3) are formed by the pattern of the photosensitive film 956. FIG. 23C shows a cross-sectional view after removing the photosensitive film 956 after forming the through hole 965. A diffusion layer 952 is exposed above the through hole 965. Next, the insulating film 955 is removed by etching. As a result, the entire diffusion layer 952 is exposed on the upper surface of the silicon substrate 951 and the upper portion of the through hole 956. A conductor film 957 is laminated in this exposed state. The conductor film 957 is laminated on the upper surface of the silicon substrate and inside the through hole, and comes into contact with the diffusion layer 952 exposed on the upper surface of the silicon substrate 951 and the upper portion of the through hole 956.

Next, in order to form the conductor film 957 in a desired pattern, the photosensitive film 958 is patterned, and the conductor film 957 is etched according to this pattern 958. {FIG. 23 (e)} In FIG. 22, the photosensitive film is patterned so as to cover the upper surface of the substrate side wall and cover the upper part of the side surface of the through-hole. Such patterning may not be performed. That is, patterning may be performed within the region of the diffusion layer 952 on the upper surface of the silicon substrate 951, and severe mask alignment is necessary (in FIG. 22, the edge of the through hole and the edge of the photosensitive film are necessary). However, severe mask alignment is not necessary in this embodiment. When the conductive film 952 is etched according to the photosensitive film 958 pattern, as shown in FIG. 23E, the conductive film 957 is etched in the region A where the photosensitive film 958 does not exist on the upper surface of the silicon substrate, and the diffusion layer 952 is formed. Exposed. Since the etching of the conductor film 957 is anisotropic (vertical) etching, the conductor film 957 laminated on the side surface of the through hole 965 is thick in the vertical direction (relative to the surface of the silicon substrate 951). In the upper C region, the conductive film 957 remains without being etched. That is, the conductor film is in contact with the diffusion layer 952 exposed on the side surface of the through hole 965. Further, since the vertical etching is performed, the conductor film 957 existing in the bottom B region of the through hole 965 is removed by etching.

Thereafter, the photosensitive film 958 is removed and heat treatment is performed, so that an ohmic contact with the conductor film 957 and the diffusion layer 952 can be obtained. For example, when the conductor film 957 is aluminum, heat treatment (alloy) is performed at about 350 ° C. to 450 ° C. Thereafter, an insulating film 959 is stacked. This insulating film 959 protects the conductor film 957 and the through hole 965 and further ensures insulation. Next, a thin plate 960 is attached. If a transparent substrate such as a glass substrate is used for the thin plate 960, light passes through, so that mask alignment is easy, and quality inspection such as pattern abnormality is facilitated. Contact holes 961 (961-1, 2) are formed in the thin plate 960, and a conductor film is laminated to form electrodes / wirings 962 (962-1, 2). Thereby, 962-1 and 962-2 become two electrodes which oppose, and the capacitor | condenser which makes the through-hole 965-2 capacitive space is comprised. A ventilation hole 963 may be formed in the thin plate 960 so that the atmospheric pressure in the through hole 965 can be kept constant.
By forming the diffusion layer in the silicon substrate in this way, the sensor of the present invention can be manufactured at a low cost by a simple process.

FIG. 24 is a view showing another embodiment in which a diffusion layer is formed on the inner surface of the through hole and the upper surface of the substrate. A description of processes overlapping with the processes described so far will be omitted. FIG. 24A shows a state in which a support substrate 973 is attached to the lower surface of the silicon substrate 971 and through holes 974 (974-1, 2) are formed in the substrate 971. If necessary, an insulating film 972 is interposed. The inner surface of the through hole 974, the upper surface of the substrate, and the upper surfaces of the substrate side walls 971 (971-1, 2, 3) are exposed. Next, as shown in FIG. 24B, a diffusion layer 975 is formed on the side surface of the substrate side wall (the inner surface of the through hole) and the portion of the upper surface of the substrate where the silicon substrate is exposed. This diffusion layer 975 can be manufactured by performing diffusion heat treatment after ion implantation, for example. Alternatively, for example, it can be manufactured by performing diffusion heat treatment after pre-deposition. This diffusion layer may be either P-type or N-type high concentration region. Since the bottom of the through hole 974 (974-1, 2) is the insulating film 972 or the support substrate 973 which is an insulator, the diffusion layer is not formed. That is, since there is no connection between the diffusion layers 975 formed on the side walls of adjacent substrates, even if contact holes and electrodes / wirings are formed in these diffusion layers 975 after that, there is no gap between these electrodes / wirings. Not electrically conductive.

Next, an insulating film 976 is stacked on the upper surface of the substrate, the inner side surface of the through hole, and the bottom of the through hole. Next, a thin plate 977 is attached to the upper surface of the substrate. Then, after forming a contact hole 977, a conductor film is laminated, and electrodes / wirings 978 are patterned in and on the contact hole. Thereafter, the electrode / wiring 978 and the diffusion layer 975 are connected (ohmic contact) by performing an appropriate heat treatment. As a result, the electrode / wiring 978 is connected to the diffusion layer 975 on the inner surface of the through hole. As a result, a capacitor is formed using the through hole 974 as a capacitance space and two opposing diffusion layers 975 in the through hole as electrodes.

FIG. 26 is a diagram showing another method for manufacturing the sensor of the present invention. When a material with a high Young's modulus is used for the substrate, the thickness of the substrate sidewall (direction parallel to the substrate surface, that is, the width is easier to understand) is reduced (decreased) so that it deforms with respect to acceleration and sound waves. Since the amount increases, the amount of change in the capacitor capacitance also increases, and the sensitivity increases. For example, in the case of a silicon substrate, the thickness (width) of the substrate side wall may be 50 μm or less, and in some cases, 20 μm or less or 10 μm or less. If the thickness of the substrate is 500 μm to 1000 μm, the output ratio (thickness ratio between the substrate sidewall and the substrate) of the substrate sidewall after forming the through hole may be 50 or more. Forming the substrate sidewalls in one time forms such an elongated building and can be deformed with a slight force during the process. Therefore, in the present manufacturing method, when forming such a high-aspect-ratio substrate sidewall, it is formed in a state where the upper and lower surfaces of the substrate sidewall are pressed by a support substrate (thin plate or insulator substrate).

As shown in FIG. 26A, a first support substrate 1013 is attached to the first surface of the substrate 1011. An insulating film 1012 may be interposed. Next, a photosensitive film 1015 is formed on the second surface of the substrate 1011 to open a window for forming a through hole. At this time, an insulating film 1014 may be interposed. The opening of the through-hole forming window does not form a photosensitive film pattern that forms a thin substrate side wall. That is, among the resulting through holes, adjacent patterns for forming through holes are not formed. For example, the space between the openings of the pattern (this portion becomes the substrate side wall) should not have an aspect ratio of 10 or more. For example, when the thickness of the substrate 1011 is 500 μm, a space of 50 μm or less is avoided. For example, in the sensor described in FIG. 19, the central through hole 732-1 is opened, and the surrounding through holes 732-2, 3, 4, and 5 are not opened here. In the sensor shown in FIG. 18, 712-1 is opened, and 712-2 is not opened here. In the sensor shown in FIG. 20, 752-1 is opened, and the surrounding 752-2 is not opened here. Next, the substrate side wall 1011 exposed at the opening 1016 of the photosensitive film 1015 is vertically etched to form a through groove (through hole) 1017 penetrating the second surface of the substrate 1011. When the insulating film 1014 exists on the first surface of the substrate 1011, this insulating film is also anisotropically etched, and then the substrate 1011 is anisotropically etched.

Next, after removing the photosensitive film 1015, a second support substrate 1021 is attached on the first surface of the (main) substrate 1011. This deposition method is the same as the method described so far. The second support substrate 1021 is also preferably an insulator substrate like the first support substrate 1013. In the case where the second support substrate 1021 or the first support substrate 1013 is a substrate other than an insulator substrate, an insulating film is stacked on the surface. Alternatively, when the main substrate 1011 is an insulator substrate, it can be directly attached. The second support substrate 1021 can be directly attached to the main substrate 1011. In that case, if the insulating film 1014 is interposed, it is removed. For example, when the main substrate 1011 is a silicon substrate, if the second support substrate 1021 is a glass substrate (insulator substrate), it can be firmly bonded using an electrostatic bonding method (anodic bonding method). Since this second support substrate 1021 is the outer lower surface of the sensor package, the thickness is preferably 50 μm or more, preferably 100 μm or more, and can be made to be a thicker and more robust package with 300 μm or more. Select according to the environment. In some cases, the thickness may be 50 μm or less.

Next, the first support substrate 1013 attached to the second surface side of the main substrate 1011 is thinned to have a thickness of 50 μm or less, preferably 30 μm or less, more preferably 20 μm or less, and even more preferably 10 μm or less. As a thinning method, there are a method using a CMP (Chemical Mechanical Polishing) method, a dry etching method, a wet etching method and the like. Alternatively, there is a method in which a bonded substrate with a thin insulating substrate is used as a first support substrate, and the bonded substrate is removed to leave only the thin insulating substrate. Thereafter, as shown in FIG. 26C, a photosensitive film 1022 is formed on the first support substrate 1013, and desired patterning is performed. This patterning is performed by pressing the first support substrate 1013 from the second surface side of the substrate side wall having a thin thickness (width) sandwiched between adjacent through holes (the first surface side is pressed by the second support substrate 1021). An object of the present invention is to obtain a substrate having a desired thickness by minimizing the deformation of the substrate side wall.

The pattern edge comes to the second surface side of the region that becomes the substrate side wall having a small thickness (width), and the region on the second surface side of the substrate side wall that has a thin thickness (width) after the etching becomes the first support substrate 1013. Pattern so as to adhere. For example, the edge after the etching of the first support substrate 1013 comes on the second surface side of the region where the edge position after the etching of the first support substrate 1013 is a dotted line, that is, the substrate sidewall having a small thickness (width). Like that. The mask alignment at the time of exposure of the photosensitive film 1022 can be performed with very precise mask alignment by matching with the pattern when the first through-hole 1017 is formed. If the first support substrate 1013 is a glass substrate, the light beam at the time of alignment is transmitted, so that more accurate mask alignment can be performed. The first support substrate 1013 is etched from the opening 1023 having a window without a photosensitive film. When the first support substrate 1013 is a glass substrate, etching is performed by dry etching using CF4 gas or C2F6 gas, wet etching using an HF-based aqueous solution, or the like. If the base is an insulating film 1012 such as a silicon oxide film, it may be etched together. As shown by the dotted line, it is desirable that the etching shape has a tapered edge because the step coverage of the insulating film or conductor film to be formed later is improved, but if the coverage of these films is good (photosensitive film pattern) Vertical etching may be used. (Fig. 27 (c))

After the first support substrate 1013 is etched, the photosensitive film 1022 is removed, and then a photosensitive film 1025 is formed to form a second through hole, and desired patterning is performed using a photolithography method. If the mask alignment at this time is also matched with the pattern of the first through hole 1017, the thin thickness (width) of the substrate side wall can be accurately controlled. Since the pattern of the first through-hole 1017 is under the first support substrate 1013, mask alignment with higher accuracy can be performed by using light having a wavelength that transmits the first support substrate 1013. The already patterned first support substrate 1013 is covered with an insulating film 1025. The main substrate 1011 is vertically etched from the opening 1026 of the patterned photosensitive film 1025 to form a through hole (second through hole) 1027. The second through hole 1027 is etched to the first surface side of the main substrate 1011. When the insulating film 1012 exists, the main substrate 1011 is etched after the insulating film is first etched (preferably vertical etching).

When the second through hole 1027 is formed, the thickness (width) of the substrate side wall 1011 (1011-1, 2) between the first through hole and the second through hole is very thin (3 μm to 50 μm), and the aspect ratio However, as shown in FIG. 26 (d), the first surface side is regulated (pressed) by the second support substrate 1021 and the second surface side is regulated (pressed) by the first support substrate 1013. The deformation of (1011-1, 2) is very small. The photosensitive film 1022 may be formed in the same manner as the second through hole forming pattern, and the first support substrate 1013 may be etched to further form the second through hole 1027. In this case, the photosensitive film 1025 may not be formed.

Next, after the photosensitive film 1025 is removed, an insulating film 1031 is formed. This insulating film is formed by a CVD method or a PVD method, and is also laminated inside the through hole 1027. This insulating film 1027 covers and protects the exposed substrate 1011 inside the through hole, ensures the adhesion of the conductor film to be formed later, and further ensures the insulation between the substrate and the conductor film. Therefore, it is necessary when the main substrate 1011 is a conductor film or a semiconductor substrate, but may not be necessary when the main substrate 1011 is an insulator substrate. After the insulating film 1031 is formed, the conductor film 1032 is formed by a CVD method, a PVD method, an ion plating method, a plating method, or a combination thereof.

The conductor films 1032 facing each other formed in the through hole 1027 serve as electrodes of the capacitor. Therefore, it is necessary to remove the conductor film 1032 formed on the bottom B of the through hole. For this purpose, a photosensitive film 1033 is formed and patterned according to the through hole 1027. That is, the upper portion of the conductor film 1032 formed in the through hole 1027 is covered, and at the same time, the opening 1034 of the through hole 1027 is formed. A photosensitive dry film is preferable as the photosensitive film 1033. Alternatively, in the case of a photosensitive film for coating or dipping, as described above, a negative photoresist in which an exposed portion is cured and an unexposed portion is developed is preferable. Further, in the case where the conductor film 1032 is used as a wiring pattern on the second surface side of the main substrate 1011, necessary patterning is performed to form the opening 1035. (FIG. 26 (e))

Next, the conductive film 1032 is anisotropically etched by the patterned photosensitive film 1033. The conductor film 1032 in the portions 1034 and 1035 where the photosensitive film 1033 is opened is etched. Etching species vertically incident from the opening 1034 of the through hole 1027 etch away the conductor film 1032 stacked on the bottom B of the through hole. As a result, the opposing conductor films 1032 (1032-1 and 2, and 1032-3 and 4) stacked on the side surface of the substrate side wall on the outer side surface of the through hole 1027 are separated. When the edge of the first support substrate 1013 is tapered, the step coverage of the insulating film 1013 and the conductor film 1032 is improved at the level difference at the edge.

Next, after removing the photosensitive film 1033, a protective film 1036 that is an insulating film is stacked over the conductor film 1032. Next, a third support substrate 1037 is attached onto the protective film 1036. At this time, the adhesive can be applied with high precision while being applied to the conductor film 1032 and the through holes 1032 and 1017 on the main substrate 1011 while applying a mask after coating only necessary portions on the support substrate. The third support substrate is preferably an insulator substrate. Since the third support substrate serves as an outer member on the upper surface or the lower surface of the sensor package, it is desirable that the substrate thickness is 100 μm or more. It may be thinner depending on the usage environment. Alternatively, it may be necessary to increase the thickness to 500 μm or more. Next, a contact hole 1038 is formed in the third support substrate, and a conductor film is stacked in the contact hole, and conductor film electrodes / wirings 1039 (1039-1, 2, 3, 4) are formed on the third support substrate. Pattern. Further, with respect to the first through hole 1017, a vent hole 1043 is formed in the third support substrate 1037 and the first support substrate 1013, or a vent hole 1041 is formed in the second support substrate 1021. In addition, with respect to the second through hole 1027, a vent hole 1044 is formed in the third support substrate 1037, or a vent hole 1042 is formed in the second support substrate 1021.

By using the manufacturing process of the present invention described with reference to FIG. 26, it is possible to reliably suppress the deformation of the substrate sidewall having a small thickness (width) during the process, and the substrate sidewall may be deformed. No need to take special care about. Moreover, since the process is very simple, the process load and cost increase are small. The process shown in FIG. 26 can be used for various substrates (a conductor substrate, an insulator substrate, or a semiconductor substrate), but the process is further simplified with a conductor substrate.

FIG. 27 is a diagram showing another embodiment showing the manufacturing method of the present invention using a conductor substrate as a seed substrate. In FIG. 27, the main substrate 1011 is a conductor substrate, and the process up to the process shown in FIG. 27B is the same as the process shown in FIG. Description of parts that are the same or similar are omitted or briefly described, but the contents described in FIG. 26 can be applied. As shown in FIG. 26C, after the first support substrate 1013 is thinned, a photosensitive film 1025 is formed, and patterning for forming a second through hole is performed by a photolithography method. Thereafter, the first support substrate 1013 exposed in the opening 1026 of the photosensitive film 1025 is etched. This etching is desirably vertical etching (anisotropic etching) that faithfully etches the pattern of the photosensitive film 1025. The first support substrate 1013 may be side-etched and taper-etched, but in this case, care is taken not to connect to the first through hole. After side etching, the lower side of the edge of the photosensitive film 1025 becomes wrinkles, and if there is a possibility that the etching species of the main substrate may enter, rebaking may be performed to cover the wrinkles with the photosensitive film. .

When the insulating film 1012 is interposed under the first support substrate 1013, it is desirable that this insulating film is also vertically etched. After the conductor film 1011 is exposed, vertical etching (anisotropic etching) of the conductor film 1011 is performed to form the second through hole 1027. (FIG. 27D) Next, the photosensitive film 1025 is removed (removed), and then the insulating film 1050 is laminated by a CVD method or a PVD method. The insulating film 1050 protects the inside of the second through hole 1027, that is, the side surface of the substrate side wall. It is also laminated on the first support substrate. The insulator film is a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like, and has a film thickness of 100 nm to 2000 nm. Since the second through hole 1027 is covered with the third support substrate 1051 thereafter, the insulating film 1050 can be omitted. Next, the third support substrate 1051 is attached to the upper surface (in FIG. 27E) side of the substrate 1011, on the insulating film 1050 (or on the first support substrate 1013). Thereafter, contact holes 1052 are formed, and conductor films are stacked to form electrodes / wirings 1053 (1053-1, 2, 3, 4). The formation of the contact holes requires etching of the insulating films 1050 and 1012 as well as the etching of the first support substrate 1013 in addition to the etching of the third support substrate 1051.

Further, vent holes 1056 and 1057 can be formed in the third support substrate. These vent holes can be formed simultaneously with the formation of the contact holes. In addition, a vent hole 1054 can be formed in the second support substrate 1021. The contact holes and vent holes of the third support substrate 1051 can also be formed before the third support substrate 1051 is attached to the upper surface of the substrate 1011. If formed in advance, the process time can be shortened. In this process, it is not necessary to stack the conductor film 1032 as described with reference to FIG. 26, and therefore, the patterning is not necessary, so that the process becomes very simple. That is, if the through hole (through groove) 1027 is formed, the conductor substrate 1011 (for example, the substrate side walls 1011-1 and 1011-2 or the substrate side walls 1011-3 and 1011-4) is separated so as not to be electrically connected. Is done. As a result, the substrate side walls 1011-1 and 1011-2 serve as counter electrodes of the capacitor having the through hole 1027 (1027-1) as a capacity space, and if a voltage is applied to the conductor electrodes 1053-1 and 1053-2, Capacitance can be measured. Similarly, the substrate side walls 1011-3 and 1011-4 serve as counter electrodes of a capacitor having a through hole 1027 (1027-2) as a capacitance space, and if a voltage is applied to the conductor electrodes 1053-3 and 1053-4, Capacitance can be measured.

Except for the present invention described with reference to FIG. 16, openings have been made in through holes or through grooves, that is, on both the substrate surface, the first surface (may be referred to as the front surface), and the second surface (may be referred to as the back surface). And a hole or groove formed in a direction perpendicular to the substrate surface, and the side surface of the substrate (side wall) surrounding (defining) the through hole (through groove) is perpendicular to the substrate surface. Although it has been handled, what has been described so far is also applicable to a vertical recess (hereinafter simply referred to as a recess) that is open to only one side. When the recess is used, it is not necessary to attach a support substrate (or a thin plate or an insulator substrate) to the substrate surface near the bottom of the recess unless the bottom of the recess becomes extremely thin. So the process becomes simple. Moreover, a semiconductor substrate has the advantage that the sensor of the present invention can be mounted on the same substrate together with ICs, transistors and other elements.

FIG. 28 is a diagram showing a case where a recess is formed in FIG. The same reference numerals are used for the same films. The recess 116 (116-1, 2, 3) is not a through hole (through groove) but a recess. That is, it is formed by etching vertically from the first surface (front surface) 111-S1 of the substrate 111 toward the second surface (back surface) 111-S2 of the substrate 111, but the second surface (back surface) of the substrate 111. Etching is stopped in the middle of the substrate 111 before penetrating without reaching 111-S2, forming a so-called recess. A lower portion 111-B of the substrate 111 exists below the concave portion 116 (116-1, 2, 3). When the depth of the recess 116 is h and the thickness of the substrate 111 is h0, h0> h. (In the case of a through-hole, h0 ≦ h.) When the substrate 111 is a conductor film or a semiconductor substrate, an insulating film 113 is laminated and laminated inside the recess, and the conductor film 115 laminated thereon The substrate 111 is prevented from conducting. When the substrate 111 is an insulator, the insulating film 113 may not be necessary. For the purpose of improving the adhesion with the conductor film 115, the insulating film 113 may be stacked.

After the insulating film 113 is stacked, the conductor film 115 is stacked. Since the conductor film 115 is also laminated on the bottom area B of the recess, the conductor film 115 in this portion is removed by etching. For this etching, the conductive film may be anisotropically etched with the opening at the top of the recess opened with a photosensitive film. Note that the conductive film 115 on the other region, that is, the first surface (front surface or upper surface) 111-S1 side of the substrate 111 can also be patterned. As a result, in the concave portion 116-1, the conductive film / electrodes 115-1 and 115-2 formed on the side surface of the substrate side wall sandwiching the through hole 116-1 with the concave portion 116-1 as the capacitive space are Forming a capacitor. Further, in the concave portion 116-3, the conductive film / electrodes 115-3 and 115-4 formed on the side surface of the substrate side wall sandwiching the through hole 116-3 with the concave portion 116-3 serving as a capacitor space serve as counter electrodes. A capacitor is formed.

The sound wave is introduced into the second recess 116-2, and the substrate side wall 111-1 sandwiched between the recess 116-2 and the recess 116-1 vibrates. In addition, the substrate side wall 111-2 sandwiched between the recess 116-2 and the recess 116-3 vibrates. A microphone can be formed by forming a recess in this way. By using the substrate 111 as a semiconductor substrate, a microphone can be manufactured together with an active element such as an IC or a transistor, and a change in the capacitance of the capacitor can be converted into a sound wave by connecting to an IC having a conversion circuit. .

The structure shown in FIG. 28 can also be used as an acceleration sensor as described in FIG. FIG. 29 is a diagram showing a case where a structure similar to FIG. 28 is applied to an acceleration sensor. That is, in this embodiment, the concave portion and the deformation of the substrate side wall sandwiched between the concave portions are used as the acceleration line sensor. The explanation is the same as the figure. In other words, when the substrate side wall 111-1 and / or 111-2 is deformed by acceleration, the center capacitance is increased in order to increase the amount of change in the capacitance of the concave portion 116-1 and / or 116-3. A heavy liquid 118 such as mercury is put into the recessed portion that is a space. Since the liquid pushes the substrate side wall due to the acceleration, the deformation amount of the substrate side wall increases, and the change amount of the capacitor capacitance also increases. If the liquid enters from the vent 122 and exits from the vent 127, the recess 116-2 can be filled, or the volume of X% of the inner space of the recess 116-2 can be filled. X may be adjusted between 0 and 100% and determined in accordance with the acceleration detection sensitivity.

FIG. 30 is a diagram showing a method for manufacturing a sensor using an epi-wafer. This epi wafer (epitaxial wafer) 1100 is a wafer in which an epi layer 1102 of a low concentration impurity layer is formed on a high concentration silicon substrate 1101. The impurity concentration of the high-concentration silicon substrate 1101 is an N-type or P-type impurity element concentration of about 10 ¹⁹ / cm ³ or more. The impurity concentration of the epilayer 1102 of the low-concentration impurity layer depends on the characteristics of the device formed in the epilayer, but the N-type or P-type impurity element concentration is about 10 ¹³ / cm ³ to 10 ¹⁷ / cm ^3. It is. The epi-wafer size is preferably 4 inches (diameter: 100 mmφ) or more, although it depends on the size of the processing apparatus and the size and number of IC chips including the sensor chip and sensor. Generally, 6 inches (150 mmφ), 8 inches (200 mmφ), 250 mm (250 mmφ), 300 mm (300 mmφ), and the like are used. The thickness of the high-concentration silicon substrate 1101 is about 100 μm or more, and the thickness of the epi layer 1102 is about 5 μm or more, although it depends on the mounted device, device characteristics, and device fabrication process.

The epi-wafer 1100 includes a region 1108 for mounting the sensor of the present invention and a region (device mounting region) 1107 for forming devices such as ICs and transistors. The photosensitive film 1103 is patterned to open a portion to be the sensor mounting region 1108, the low concentration impurity layer 1102 in the opened region is removed, and the high concentration impurity layer 1101 is exposed. Etching of the low-concentration impurity layer 1102 includes wet etching, anisotropic etching such as KOH and EDP (EthyleneDiamine + Pyrocatechol + water), isotropic etching such as hydrofluoric acid (HF + NHNO3 + CH3COOH (or water)), and dry etching is CF4, Plasma etching such as CHF3 and C2F6. The etching surface 1105 may be inclined (or tapered), or may be vertical etching. If taper is used, coverage during wiring formation can be improved. Inclined etching may be performed by dry or wet etching. Even in anisotropic etching such as KOH, when the substrate surface is (100), the etching surface is (111), and the tilt angle is about 54.7 °. It is also possible to stack a silicon oxide film, a silicon nitride film, and a silicon oxynitride film between the photosensitive film 1103 and the epi wafer 1102 and to etch the epi layer 1102 using these as a mask.

As described above, the sensor mounting region 1108 becomes the recess 1104, and the high concentration substrate 1101 is exposed. Since the subsequent process is the same as the sensor formation process described so far, the detailed description of the overlapping parts is omitted. Basically, a through hole and a substrate side wall are formed in a high concentration substrate, an insulating substrate is attached to the upper surface and the lower surface of the through hole and the substrate side wall, and the through hole serves as a capacitor space. To form a capacitor. As shown in FIG. 30B, an insulating substrate is attached to the second surface of the epi wafer 1100 (the surface without the epi layer 1102 and the back surface where the high concentration substrate surface is exposed). If necessary, an insulating film such as a silicon oxide film may be interposed. Next, a photosensitive film 1111 is formed on the surface, and an opening 1112 for forming a through hole is patterned. If necessary, a silicon oxide film or the like may be interposed. The high-concentration silicon substrate 1101 exposed in the opening 1112 is vertically etched to form through holes 1114 (1114-1, 2, 3). The through hole 1114 completely penetrates from the first surface (front surface) side to the second surface (back surface) side of the high-concentration silicon substrate 1101, and the bottom of the through hole 1114 becomes the insulating substrate 1110.
The insulating substrate 1110 is made of glass, stone, ceramic, plastic, polymer resin, or the like. The thickness of the insulating substrate 1110 may be about 50 μm, but it may be made thinner depending on the use condition of the sensor and the etching condition. In order to increase the strength of the sensor, it may be thicker than this. By forming the through holes 1114, substrate side walls 1101 (1101-1, 2, 3, 4) are formed. Substrate sidewalls 1101-1 and 1101-2 that face each other with the capacitance space 1114-2 interposed therebetween are separated so as not to be electrically connected. Similarly, the substrate side walls 1101-13 and 1101-4 that face each other with the capacitor space 1114-3 interposed therebetween are separated so as not to be electrically connected. (FIG. 30 (c))

Next, the photosensitive film 1111 is removed and an insulating film 1116 is laminated (may not be formed in some cases), and the insulating substrate 1117 is placed on the upper surface of the substrate side wall 1101 (1101-1, 2, 3, 4). Adhere. Since the sensor mounting area is a recess 1104, it is lower in the epi-wafer 1100. Since the insulating substrate 1117 is attached only to this region, for example, an insulating substrate 1117 of a size that can be attached to the substrate side wall 1101 (1101-1, 2, 3, 4) in the recess 1104 is attached to another substrate in advance. In addition, the insulating substrate 1117 is attached to this region by aligning the mask. As a result, the substrate side walls 1101-2 and 1101-3 serving as diaphragms are restricted to the insulating substrate 1117 on the upper surface and to the insulating substrate 1110 on the lower surface. (FIG. 30D) The insulating substrate 1110 is made of glass, stone, ceramic, plastic, polymer resin, or the like. The insulating substrate 1117 is made slightly thicker than the depth of the recess 1104 because the insulating substrate 1117 attached to the substrate is aligned, transferred, and placed in the recess 1104 of the epi-wafer.

Next, a contact hole 1118 is formed in the insulating substrate 1117 to form a conductor film 1119, and a conductor film / electrode / wiring 1119 is formed. As a result, the electrode / wiring 1119 is connected to the substrate side wall 1101 (1101-1, 2, 3, 4) which is a conductor substrate. If necessary, an opening (vent hole) 1121 may be formed in the insulating substrate 1117 and an opening (vent hole) 1122 may be formed in the insulating substrate 1110. The contact holes 1118 and the openings 1121 and 1122 may be formed in advance on the insulating substrate, and then the insulating substrate may be attached to the epiwafer.

As described above, the sensor can be formed in a partial region in the epi-wafer by a very simple process. Since devices such as ICs and transistors can be formed in the device mounting area other than the sensor mounting area, for example, a circuit for processing sensor signals and an arithmetic circuit can be included in one chip. In addition, since the insulating film and the conductor film can be used in combination with the process for manufacturing the device, the process cost can be reduced.

Using a high-energy / high-current ion implantation system, a high-concentration region is produced in a low-concentration epilayer of an epi-wafer, and a sensor is produced in that portion, thereby providing a sensor on a chip together with an active device such as an IC or transistor. Can be produced. FIG. 31 is a diagram showing another embodiment of a sensor manufacturing method using an epi-wafer. In an epi-wafer 1130 having a high-concentration substrate 1131 and a low-concentration epi (epitaxial) layer 1132, a photosensitive film 1136 is formed, a region to be a sensor mounting region 1134 is opened, and a region to be a device mounting region is photosensitive. Covering with a film 1136, ion implantation is performed on the entire surface of the wafer. The ions of the ion implantation 1137 are preferably the same as the conductor type of the high concentration substrate 1131. The acceleration energy and dose of ion implantation are selected so that the total concentration of the epi layer is 10 ¹⁹ / cm ³ or more in the heat treatment after ion implantation. In addition, a photosensitive film having a sufficient thickness is formed so that ions are not implanted into the epi layer 1132 in the device mounting region 1133 during this ion implantation.

After ion implantation, activation and diffusion heat treatment of the ion implantation layer are performed, and a high concentration ion implantation layer 1141 is formed in the epi layer 1132. This high concentration ion implantation layer 1141 is connected to the high concentration substrate 1131 and becomes electrically completely conductive. Note that the high-concentration ion implantation layer 1141 may be formed by predeposition or the like. Thereafter, the photosensitive film 1143 is patterned to open a window for forming a through hole. This through-hole forming window is opened in the sensor mounting area. An insulating film such as a silicon oxide film may be interposed between the photosensitive film 1143 and the epitaxial wafer 1130. (Fig. 31 (b))

Next, a through hole 1145 is formed, and a substrate side wall 1146 is formed. Next, the photosensitive film 1143 is removed, and if necessary, an insulating film 1147 is laminated to protect the epitaxial wafer 1130 exposed through the through holes 1145 and the like. Thereafter, an insulating substrate 1148 is attached to the upper surface of the epi-wafer 1130 to form a contact hole 1149 and a conductor film / electrode / wiring 1150. As a result, the conductor film / electrode / wiring 1150 is connected to the high concentration layer 1141 of the epi layer 1132 through the conductor film in the contact hole 1149 and further connected to the substrate sidewall 1146 having a high concentration. As a result, a capacitor of the counter electrode 1146 is produced with the through-hole 1145 as a space capacitance and sandwiching it. In this embodiment, since the epitaxial layer 1132 in the device mounting region 1133 is not affected, a normal IC, transistor, or the like can be formed. (Fig. 31 (c))

A high concentration diffusion layer is formed on a normal silicon semiconductor substrate, and the sensor of the present invention can be formed there. FIG. 32 is a diagram showing an embodiment of a method for producing a sensor of the present invention. A photosensitive film 1162 is formed on a low-concentration silicon wafer 1161 having an impurity concentration of 10 ¹⁷ / cm ³ or less, a region 1164 serving as a sensor mounting region is opened, and the device mounting region 1163 is covered with the photosensitive film. An insulating film may be formed between the silicon wafer 1161 and the photosensitive film. High dose ion implantation 1165 is performed using a high energy ion implantation apparatus so that the concentration of the ion implanted layer after the heat treatment is 10 ¹⁹ / cm ³ or more. The ion to be implanted is a conductor opposite to the conductivity type of the silicon wafer 1161. The thickness of the photosensitive film 1162 is adjusted so that ions are not implanted into the device mounting region 1163 during ion implantation. (Fig. 32 (a))

After removing the photosensitive film 1162, heat treatment is performed to activate the ion-implanted ion-implanted layer and diffuse the impurity layer to form an ion-implanted diffused layer 1167. The impurity concentration of the ion implantation diffusion layer 1167 is preferably 10 ¹⁹ / cm ³ or more. This ion implantation diffusion layer 1167 corresponds to the sensor mounting region. Next, a photosensitive film 1168 is formed, and an opening for forming a recess is formed in the region of the ion implantation diffusion layer 1167. (FIG. 32B) An insulating film may be formed between the photosensitive film 1168 and the silicon wafer 1161.

Next, the silicon wafer 1161 is vertically etched from the opening of the photosensitive film 1168 to form concave portions 1169 (1169-1, 2, 3). The depth h12 of the recess 1169 is made deeper than the depth h11 of the ion implantation diffusion layer 1167. That is, h12> h11. (Fig. 32 (c))

Next, the photosensitive film 1168 is removed, and if necessary, an insulating film 1170 is formed to protect the silicon substrate exposed to the recess 1169, and the insulating substrate 1171 is formed on the upper surface of the ion implantation diffusion layer 1167 of the silicon wafer 1161. Adhere to. Next, a contact hole 1172 is formed in the insulating substrate 1171, and a conductor film 1173 is laminated in the contact hole 1172 and on the insulating substrate 1171 to form a conductor film / electrode / wiring 1173. Since the recess 1169 (1169-1, 2, 3) is deeper than the ion implantation diffusion layer 1167, the substrate side walls 1167-1 and 1167-2 are not electrically connected. (The silicon wafer 1161 and the ion implantation diffusion layer 1167 have opposite conductivity types.) Accordingly, the concave portions 1169-2 are used as space capacitors, and the counter electrodes 1167-1 and 1167-2 are counter electrodes of the capacitor. . The lower side of the substrate side wall 1167-2 is connected to the silicon wafer 1161, and the upper surface of the substrate side wall 1167-2 is attached to the insulator substrate 1171. For example, when acceleration is applied or sound waves enter the recess 1169-1, the substrate side wall 1167-2 1167-2 is deformed, and the capacity of the through hole 1169-2 is changed. Similarly, the substrate side walls 1167-3 and 1167-4 are not electrically connected. (The silicon wafer 1161 and the ion implantation diffusion layer 1167 have opposite conductivity types.) Therefore, with the recess 1169-3 as the space capacitance, 1167-3 and 1167-4 serving as counter electrodes are counter electrodes of the capacitor. . The lower side of the substrate side wall 1167-3 is connected to the silicon wafer 1161, and the upper side of the substrate side wall 1167-3 is attached to the insulator substrate 1171. For example, when acceleration is applied or sound waves enter the recess 1169-1, the substrate side wall 1167-3 1167-3 is deformed, and the capacity of the through hole 1169-3 is changed. (Fig. 32 (d))

FIG. 33 is a diagram showing another method for manufacturing a sensor using an epi-wafer. In the present embodiment, a recess is formed on the high concentration substrate side of the epi-wafer 1200. In addition, the conductivity type of the high-concentration substrate 1201 and the conductivity type of the low-concentration layer epilayer 1202 are reversed. (Alternatively, such a reverse conductor type wafer may be bonded.) A photosensitive film 1205 is formed on the high-concentration substrate 1201 side of the back surface of the epi-wafer 1200 to form an opening for forming a recess. An insulating film 1203 may be formed on the surface side (low concentration region side) of the epi wafer 1200 to protect the surface side. Further, an insulating film such as a silicon oxide film may be formed between the photosensitive film 1205 and the back surface of the epi wafer 1200. Next, the recess 1206 (1206-1, 2, 3, 4, 5) is formed by vertical etching based on the pattern of the photosensitive film 1205. When the thickness of the high-concentration substrate 1201 of the epi-wafer 1200 is h13 and the depth of the recess is h14, the depth of the recess 1206 is deeper than the thickness of the high-concentration substrate 1201, and the bottom of the recess is the low-concentration region 1202 of the epi-wafer 1200. Etch to come in. That is, h14> h13. However, the etching amount is controlled so that the recess 1206 does not become a through hole. (Fig. 33 (a))

Next, the photosensitive film 1205 is removed, and a protective insulating film 1208 is laminated when the insulating film 1208 is required on the back side and the concave side of the epi-wafer 1200. Next, an insulating substrate 1209 is attached to the back side of the epi-wafer 1200. Thereafter, an insulating film 1211 is formed, and the conductor film 1212 is laminated in the contact hole 1212 and on the insulating substrate 1209 and patterned to form a conductor film / electrode / wiring 1212. The conductor film / electrode / wiring 1212 is connected to the substrate side wall 1207 (1207-1, 2, 3, 4, 5, 6) of the high concentration substrate 1201. As a result, a capacitor is formed in which, for example, the recess 1206-2 is used as a space capacity, and the counter electrodes 1207-2 and 1207-3 in the recess serve as capacitor electrodes. Accordingly, when the substrate side wall 1207-3 is deformed, the space capacity (capacitor capacity) of the recess 1206-2 changes.

In this embodiment, a device such as an IC or a transistor can be freely manufactured in the low concentration region 1202 on the front side of the epi wafer or the bonded wafer 1200. Accordingly, not only can an IC chip mounted with a sensor be produced, but also the size of the sensor mounted IC chip can be greatly reduced. If through wiring is used, electrodes and pads can be collected on one surface (front surface or back surface). Alternatively, a contact hole 1214 is formed from the surface side of the epi-wafer 1200, an insulating film 1213 is formed on the side wall thereof, a conductor film 1215 is laminated on the contact hole 1214 and the surface side, and patterned to form a conductor film / electrode / A wiring 1215 is produced. As a result, the substrate can be connected to the substrate side wall electrode 1207 of the high concentration substrate 1201, and the sensor can be moved from the device on the surface side of the epi-wafer 1200. In the present embodiment, the electrode length in the depth direction of the capacitor is determined not by the depth h14 of the recess 1206 but by the substrate thickness of the high-concentration substrate 1201, so that it is not affected by variations in etching.

FIG. 34 is a diagram showing an embodiment of a sensor using a substrate on which an epi-wafer is bonded and a manufacturing method thereof. An epiwafer 1230 comprising a low concentration epilayer 1232 having a thickness h21 and a high concentration substrate 1231 having a thickness h22, and an epiwafer 1240 comprising a low concentration epilayer 1242 having a thickness h23 and a high concentration substrate 1241 having a thickness h24 are combined with each other. Paste together. (Lamination surface 1245) The conductivity type of the high-concentration substrates 1231 and 1241 is the same type, and the conductivity type of the epi layers 1232 and 1242 is different.

This bonding is performed using normal temperature bonding, high temperature bonding, or an adhesive. When an adhesive is used, a conductive adhesive is used so that the high concentration substrates 1231 and 1241 are electrically connected. A photosensitive film 1235 is formed on one surface of the bonded substrate 1249 on the side of the epi layer 1232, the sensor mounting area 1233 is opened, and the device mounting area 1234 is covered with the photosensitive film 1235. An ion implantation 1236 is performed at a high energy and a high dose using a high energy ion implantation apparatus into the opening of the photosensitive film 1235, and the concentration of the ion implantation diffusion layer 1237 becomes 10 ¹⁹ / cm ³ or more after heat treatment, It can be electrically connected to the concentration substrate 1231. Therefore, the ion conductivity type of the ion implantation is the same as that of the high concentration substrates 1231 and 1241. An insulating film 1243 may be formed to protect the epi layer 1242 before bonding or ion implantation. Similarly, an insulating film may be formed between the epi layer 1232 and the photosensitive film 1235. (Fig. 34 (a))

After the photosensitive film 1235 is removed, the ion implantation layer is activated and diffusion heat treatment is performed to form an ion implantation diffusion layer 1237. This ion implantation diffusion layer 1237 is electrically connected to the high concentration substrate 1231. Next, a photosensitive film 1238 is formed, and a window for forming a recess is formed in the sensor mounting region 1233. If necessary, an insulating film may be formed between the epi layer 1232 and the photosensitive film 1238. The epitaxial layer 1232 (1237), the high-concentration substrate 1231, and the high-concentration substrate 1241 are completely vertically etched from the portion where the window is opened, and the recesses 1239 (1239-1, 1, 2 and 3) are formed so as to reach the epi layer 1242. . The concave portion 1239 does not penetrate the epi layer 1242. If the thickness of the recess is h25, h21 + h22 + h24 + h23> h25> h21 + h22 + h24. (However, the thickness of the adhesive is ignored.)

As a result, the bonded substrate sidewalls 1240-1 and 1240-2 or the bonded substrate sidewalls 1240-3 and 1240-4 are not electrically connected. Then, the recess 1239-2 becomes a space capacity, and the bonded substrate side walls 1240-1 and 1240-2 become opposing capacitor electrodes. Similarly, the concave portion 1239-3 serves as a space capacity, and the bonded substrate side walls 1240-3 and 1240-4 serve as opposing capacitor electrodes. The length of the capacitor in the depth direction of the capacitor is h21 + h22 + h24, and does not depend on the depth h25 of the recess 1239. The subsequent process is the same as in FIG. 33, and an insulator substrate, contact holes, electrodes, and the like are formed. In this manner, the sensor of the present invention can be formed using the epiwafer bonded substrate. In this case, devices such as ICs and transistors can be formed on the low-concentration epilayers 1232 and 1242 of the epiwafer. A sensor-mounted IC (transistor) can be manufactured. It should be noted that the sensor can be fabricated using this embodiment even by a method in which the epilayer 1232 is etched and the high concentration substrate 1231 is exposed as in FIG. 30 without performing ion implantation.

In addition, the concave portion can be formed even when the substrate to be bonded is not a high concentration substrate but a low concentration substrate. In this case, in FIG. 34, the epi wafer 1240 composed of the epi layer 1242 and the high concentration substrate 1241 may be considered as a low concentration substrate (low concentration silicon wafer). h24 and h23 may be thrown together, forming a recess until reaching the low-concentration silicon wafer, and etching the recess so that h25> h21 + h22. In this case as well, devices can be formed on both the epi layer 1232 side and the low-concentration silicon wafer side. Further, if the epi-wafer 1230 is entirely a high-concentration substrate, the high-concentration substrate and the low-concentration substrate are bonded together to form a concave portion from the high-concentration substrate side, and the bottom of the concave portion is turned to the low-concentration substrate side, the sensor of the present invention A device such as an IC can be formed on the surface on the low concentration substrate side on the surface on the substrate side. An insulating film or an insulator may be sandwiched between the low concentration silicon wafer and the high concentration substrate. In this case, the bottom of the recess may be stopped by an insulating film or an insulator. In this case, the conductivity type of the low concentration silicon wafer and the high concentration substrate may be the same. (In the case of direct bonding, different conductive types are used so that they are not electrically connected), or the recess may enter the low concentration region side. In any case, since the length of the concave portion on the depth side of the capacitor is determined by the thickness of the high concentration substrate, there is an advantage that etching variation is not related.

FIG. 35 is a diagram showing a sensor using a composite substrate in which a conductor substrate and a semiconductor substrate are bonded, and a manufacturing method thereof. The conductor substrate is, for example, a conductor substrate such as a high concentration silicon semiconductor substrate, a conductor substrate such as a metal or an alloy, a conductor substrate such as a conductive polymer, a conductive plastic, or a conductive rubber. Hereinafter, the conductor substrate is described as a high-concentration silicon semiconductor substrate. The semiconductor substrate is a single element semiconductor substrate such as silicon, germanium, or carbon (diamond), a binary semiconductor substrate such as gallium arsenide, silicon carbide, or gallium nitride, or a multi-element semiconductor substrate higher than that. Hereinafter, the semiconductor substrate will be described as a silicon semiconductor substrate. A photosensitive film 1255 is formed on the conductor substrate 1250 side of the composite substrate 1250 to which the conductor substrate 1251 and the semiconductor substrate 1252 are bonded, and patterning for forming a recess is performed. An insulating film 1254 may be interposed between the conductor substrate 1251 and the semiconductor substrate 1252. The insulating film 1254 is a silicon oxide film (SiOx) or the like, and is formed by CVD, PVD, coating + heat treatment, oxidation, nitridation, or the like. Examples of the bonding method include a method using an adhesive, a room temperature bonding method, an electrostatic bonding method, anodic bonding, diffusion bonding, and anodic bonding. An insulating film may be interposed between the conductor substrate 1251 and the photosensitive film 1255. In addition, an insulating film 1253 may be formed to protect the surface on the semiconductor substrate side. (Fig. 35 (a))

Based on the opening pattern of the photosensitive film 1255, the conductor substrate 1251 is vertically etched (shown by a broken line) to form recesses 1256 (1256-1, 2, 3, 4). Etching is performed so that the depth of the recess is deeper than the thickness of the substrate. When the insulating film 1254 is present, the recess 1256 can be formed into a predetermined vertical hole by using the insulating film 1254 as an etching stopper. When the insulating film 1254 is present, the conductivity type of the conductor substrate 1251 and the conductivity type of the semiconductor substrate 1252 may be the same or different and are not electrically connected to each other. Even if the recess 1256 etches the entire insulating film 1254 and reaches the semiconductor substrate 1252, the insulating film 1254 is present, so that it does not conduct. (If there is a risk of electrical conduction, an insulating film may be laminated on the inner surface of the recess after this.) When the insulating substrate 1254 is not present and the conductive substrate 1251 and the semiconductor substrate 1252 are directly attached, the conductive film The conductivity types of the body substrate 1251 and the semiconductor substrate 1252 are reversed.

The recess 1256 is preferably a vertical pattern in which the conductor substrate 1251 is completely etched in the depth direction, and reaches the middle of the insulating film 1254 or the semiconductor substrate 1252. However, when a device is formed in the semiconductor substrate 1252, the concave portion 1256 is formed with a depth that does not affect the device. Substrate sidewalls 1257 (1257-1, 2, 3, 4, 5) are formed by forming the recesses 1256 (1256-1, 2, 3, 4). By doing so, it is possible to prevent the substrate side walls (for example, the counter electrodes 1257-2 and 1257-3 sandwiching the capacitor space 1256-2 from being electrically connected) between adjacent conductor substrates.

Next, the photosensitive film 1255 is removed, and if necessary, an insulating film is formed to protect the inner surface of the recess 1256 and the surface of the conductor substrate. After that, the insulating substrate 1258 is attached to the surface side of the conductor substrate 1251, and the upper surface of the substrate side wall 1257 (1257-1, 2, 3, 4, 5) is attached and fixed to the insulating substrate 1258. A contact hole 1261 is formed in the insulating substrate 1258, a conductor film is laminated in the contact hole 1261 and on the insulator substrate 1258, and conductor film electrodes / wirings 1259 (1259-1, 2, 3, 4, 5) are formed. Form. And / or contact holes 1262 are formed in the surface on the semiconductor substrate 1252 side up to the conductor substrate 1251 side, laminated in the contact holes 1262 and on the surface side of the semiconductor substrate 1252, and conductor film electrodes / wirings 1264 (1264-1, 2, 3).

Since the semiconductor substrate 1252 is exposed on the inner surface of the contact hole 1262 when the contact hole 1262 is formed, an insulating film 1263 is formed on the inner surface of the contact hole 1262, and the conductor film formed in the semiconductor substrate 1252 and the contact hole 1262. To prevent electrical continuity with. As a method of forming the insulating film 1263 on the inner surface of the contact hole 1262, the insulating substrate 1263 is stacked after the contact hole 1262 is formed, and the entire surface (or only a neighboring region including the contact hole) is anisotropically etched. The insulating film 1263 stacked on the 1251 is etched away, and the insulating film 1263 remains on the inner surface of the contact hole 1262. After that, if a conductor film is stacked, it is electrically connected to the conductor substrate 1251.

The insulating substrate 1258 covers the recess 1256, but if necessary, an opening 1265 (may be referred to as a vent) may be provided in the recess 1256. The opening 1265 may be formed together with the contact hole 1261. An opening (which may be referred to as a vent) 1266 may be provided on the semiconductor substrate 1252 side. The opening 1266 may be formed together with the contact hole 1262.

By the recess 1256 formed as described above, the substrate side wall 1257 (1257-1, 2, 3, 4, 5) of the conductor substrate 1251 can be formed so as not to be electrically connected. For example, the recess 1256-2 is used as a space capacity, and the counter electrodes 1257-2 and 1257-3 serve as the counter electrodes of the capacitor with the space therebetween. The conductive film / electrode / wiring 1259-2 is connected to the substrate sidewall 1257-2 of the conductor substrate 1251, and the conductive film / electrode / wiring 1259-3 is connected to the substrate sidewall 1257-3 of the conductor substrate 1251. The conductor film / electrode / wiring 1264-2 on the semiconductor substrate 1252 side is connected to the substrate side wall 1257-2 of the conductor substrate 1251, and the conductor film / electrode / wiring 1264-3 on the semiconductor substrate 1252 side is conductive. It connects to the substrate side wall 1257-3 of the body substrate 1251.

In the embodiment shown in FIG. 35, a sensor in which a device such as a transistor or an IC is formed on the semiconductor substrate 1252 side and a recess is formed on the lower conductor substrate 1251 side can be manufactured. In addition, the IC chip can be made smaller. Since electrodes can be formed on both sides of the composite substrate 1250, control can be performed from either side. Alternatively, the electrodes can be formed only on one substrate surface. (For example, electrode 1259-1 is conducted to electrode 1264-1 through substrate side wall 1257-1 of conductor substrate 1251.)

FIG. 36 is a diagram illustrating a sensor created using the imprint method and a method for manufacturing the sensor. An insulating film 1613 is formed over a substrate 1611 including a recess 1614 having a depth H0 formed in a substrate 1611 such as a semiconductor substrate. When a chip on which a sensor is mounted together with a transistor, an IC, or the like is manufactured, the substrate is a semiconductor substrate such as silicon. The depth H0 of the recess 1614 depends on the material constituting the sensor and the characteristics of the sensor, but is approximately 10 μm or more. The insulating film 1613 is a silicon oxide film, a silicon nitride film, or a silicon oxynitride film, and has a thickness of about 100 nm to 2000 nm. This insulating film 1613 is intended to be electrically and physically separated from the substrate 1611 and the conductive polymer formed in the recess. In addition, it also serves as an etching stopper when etching the recess formed inside the conductive polymer. Next, a conductive polymer 1615 is filled into the recess 1614. Liquid or gel-like conductive polymer 1615 is coated by a coating method, dipping method, screen printing method, or the like, or a sheet-like conductive polymer is attached to substrate 1611 to melt and soften the conductive polymer sheet in the recess. Conductive polymer 1615 is placed in {FIG. 36 (a)} The conductive polymer may be various conductive polymers such as polyacetylene, polythiophene, polyanilene, polypyrrole, etc., or a polymer having conductivity by mixing conductive fine particles such as metal in the polymer. good. Or the rubber | gum which mixed electroconductive fine particles, such as a metal, in conductive rubber or rubber | gum, and gave conductivity may be used. {FIG. 36 (a)}

Next, a mold 1617 having a sensor-forming recess-forming pattern 1619 formed in the polymer is inserted into the liquid or gel-like conductive polymer 1615 in the recess 1614 and cured by heat treatment or UV irradiation. 1617 and the mold pattern 1619 are pulled out from the polymer 1615 to form recesses 1621 (1621-1, 2, 3) in the polymer 1615. Since the polymer 1615B exists at the bottom of the recess 1621 (1621-1, 2, 3), the polymer substrate side wall 1615 (1, 2, 3, 4) is connected at the polymer bottom 1615B in this state. Therefore, the polymer 1615 is anisotropically etched to remove the polymer 1615B. If the etching selection ratio between the polymer 1615 and the insulating film 1613 is large, the insulating film 1613 serves as an etching stopper even if the polymer 1615 is over-etched considerably or the insulating film 1613 is not thickened. The insulating film 1613 (1613-B) can be left. In this way, recesses 1621 (1621-1, 2, 3) are formed, whereby polymer substrate side walls 1615 (1615-1, 2, 3, 4) are formed, and polymer substrate side walls 1615-1, 1615- 2 is not electrically connected. The polymer substrate side walls 1615-2 and 1615-3 are not electrically connected. (FIGS. 36 (b), (c), (d), (e))

Next, if necessary, an insulating film 1622 is stacked in order to protect the surface (1615S) of the conductive polymer 1615 and the inner surface of the recess 1621. Next, an insulating substrate 1623 is attached, a contact hole 1624 is formed, a conductor film is further laminated in the contact hole and on the surface of the insulating waterfall substrate 1623, and conductor films / electrodes / wirings 1625 (1625-1, 3, 4) is produced. In this way, a capacitor is formed with the concave portion 1621-2 as the capacitor space and the polymer electrode substrate side walls 1615-1 and 1615-3 facing each other on both sides thereof as capacitor electrodes. The polymer electrode substrate side wall 1615-1 is deformed by the sound wave, acceleration, or angular velocity introduced into the recess 1621-1, and the capacitor capacity of the recess 1621-2 changes. Since the conductor film / electrode / wiring 1625 is electrically connected to the substrate side wall (1615-1, 3), a change in the capacitor capacity can be detected. Similarly, a capacitor is formed using the concave portion 1621-3 as a capacitor space and the opposing polymer electrode substrate side walls 1615-2 and 1615-4 on both sides thereof as capacitor electrodes. The polymer electrode substrate side wall 1615-2 is deformed by the sound wave, acceleration or angular velocity introduced into the recess 1621-1, and the capacitor capacity of the recess 1621-3 changes. Since the conductor film / electrode / wiring 1625 is electrically connected to the substrate side wall (1615-2, 4), a change in the capacitor capacity can be detected. (FIG. 36 (f))

When necessary (for example, when venting into the concave portion 1621, introducing a sound wave, or putting a heavy liquid into the concave portion), the opening 1626 is formed in the insulating substrate 1623. The contact hole 1624 and the opening hole 1626 can be formed by the same process, or an insulating substrate 1623 on which these are formed in advance may be attached to the surface 1615S of the polymer 1615 or the upper surface of the polymer substrate 1615. In the present embodiment, a contact hole 1627 to the side wall of the polymer substrate can also be formed on the surface 1611B side opposite to the surface 1611S on which the recess 1614 of the substrate 1611 is formed. A photosensitive film is formed on the surface 1611B (if an insulating film 1630 or the like is formed thereon) of the substrate 1611, a necessary pattern is formed, the insulating film 1630 or the like is etched, ) The substrate 1611 is etched, and the insulating film 1613 is further etched to form a contact hole 1627 connected to the polymer substrate side wall 1615. When the substrate 1611 is a semiconductor substrate or a conductor substrate, an insulating film 1628 is stacked on the side surface of the substrate 1611 exposed through the contact hole 1627. Thereafter, a conductor film is laminated in the contact hole 1627 and on the substrate 1611B (on the upper insulating film 1613) to form a conductor film / electrode / wiring 1629. As a result, a conductor film / electrode / wiring 1629 connected to the polymer electrode 1515 can be obtained also on the substrate 1611B side. This means that it can be controlled from both sides (1611S, 1611B) or one side of the substrate 1611. If necessary, the opening 1631 can be provided on the substrate surface 1611B side.

As described above, a concave portion (first concave portion) is formed on the substrate surface of the substrate 1611, a conductive polymer is formed thereon, and the concave portion (second concave portion) is formed in the concave portion (first concave portion) in the substrate using the imprint method. A capacitor having a concave portion), a second concave portion as a capacitance space, and a conductive polymer substrate side wall as a capacitor electrode can be formed, and using this, a microphone sensor, an acceleration sensor, each speed sensor, and other sensors (pressure) Sensor). If the substrate 1611 is a semiconductor substrate such as silicon, a sensor can be manufactured together with a device such as a transistor or an IC. When a device such as an IC is manufactured on the same substrate surface (1611S side) as the first recess of the sensor, a device such as an IC can be manufactured in a region without the first recess. When a device such as an IC is fabricated on the substrate surface (1611B side) opposite to the first recess of the sensor, a device such as an IC can also be fabricated in the lower region of the first recess. An IC with a sensor can be manufactured.

When the pattern depth of the mold pattern 1619 is H10, the polymer substrate side wall depth H11 is substantially the same as H10 before etching the bottom of the second recess 1621 (FIG. 36D), = H10) The depth H12 of the second recess 1621 after etching the bottom of the second recess 1621 is slightly smaller than H11 because the etching rate of the insulating film 1613 at the bottom of the second recess 1621 is slower than the etching rate of the polymer 1615. Become. (H12 <H11) The depth of the capacitor electrode is the same as the depth H13 of the polymer substrate side wall (1615-1, 2, 3, 4), but this H13 is slightly smaller than H12. Therefore, it is important to control the etching variation and the etching amount of the bottom of the second recess 1621.

In the embodiment shown in FIG. 36, a conductive polymer is formed on a flat substrate surface (with an insulating film formed if necessary) without forming the recess 1614 in the substrate 1611, and the same as in FIG. A simple sensor structure (there is no first recess 1614).

FIG. 37 is a diagram showing another embodiment for producing a sensor using an imprint mold. An insulating polymer 1302 is formed over the substrate 1301, and a conductive polymer 1303 is formed thereover. As this manufacturing method, for example, there are a method of producing a liquid insulating polymer 1302 by a coating method or a dip method, a method of applying a gel-like or paste-like insulating polymer 1302, or a polymer sheet adhesion method. Next, a liquid insulating polymer, a gel-like or paste-like insulating polymer, or a liquid conductive polymer 1303 is formed on the polymer sheet 1302 by a coating method or a dipping method, or a gel-like or paste-like one is formed. A conductive polymer 1303 is applied or a conductive polymer sheet 1303 is attached. (Fig. 37 (a))

Next, a mold 1305 having a recess forming pattern 1306 is inserted into the polymers 1303 and 1302. When the insulating polymer 1302 and the conductive polymer 1303 are liquid, gel, or paste, they can be pushed in as they are. When either the insulating polymer 1302 or the conductive polymer 1303 is solid, for example, imprinting is performed as follows. When the insulating polymer 1302 is solid, when the conductive polymer 1303 is liquid, gel, or paste, the molds 1305 and 1306 are first pushed into the conductive polymer 1303. The molds 1305 and 1306 are pushed into the softened insulating polymer 1302 at a temperature equal to or higher than the temperature at which the insulating polymer 1302 softens when the tip of the mold pattern 1306 approaches the insulating polymer 1302. Thereafter, the temperature is lowered below the softening temperature (TM1302) of the insulating polymer 1302, and the insulating polymer 1302 is cured. By using a material (TM1303 <TM1302) in which the softening temperature (TM1303) of the conductive polymer 1303 is lower than the softening temperature of the insulating polymer 1302, the temperature is further lowered to cure the conductive polymer 1303. After the insulating polymer 1302 and the conductive polymer 1303 are cured, the molds 1305 and 1306 are pulled out to form a recess 1307.

When the insulating polymer 1302 and the conductive polymer 1303 are solid, for example, a material (TM1302> TM1303) in which the softening temperature (TM1302) of the insulating polymer 1302 is higher than the softening temperature (TM1303) of the conductive polymer 1303 is used. The substrate 1301 on which the insulating polymer 1302 and the conductive polymer 1303 are formed is held between TM1302 and TM1303, and the molds 1305 and 1306 are inserted into the conductive polymer 1303. Next, when the tips of the molds 1305 and 1306 approach the insulating polymer 1302, the molds 1305 and 1306 are inserted into the insulating polymer 1302 which has been softened by increasing the temperature of the substrate 1301 to TM1302. When the molds 1305 and 1306 are pushed in place, the insulating polymer 1302 is cured by setting the temperature of the substrate 1301 between TM1302 and TM1303, and then the conductive polymer 1303 is cured by setting the temperature to TM1303 or lower. When the molds 1305 and 1306 are drawn after both the insulating polymer 1302 and the conductive polymer 1303 are cured, a recess 1307 is formed in the polymer. Since the bottom of the recess 1307 is an insulating polymer, the conductive polymer substrate sidewalls 1303 (for example, 1303-1 and 1303-3, or 1303-3 and 1303-4) are not electrically connected. Thereafter, the sensor can be manufactured by a process similar to the method shown in FIG. (Fig. 37 (a), (b), (c), (d))

As described above, the thicknesses of the insulating polymer and the conductive polymer are adjusted so that the tip portion of the mold pattern 1306 that forms the bottom of the concave portion enters the insulating polymer. In the embodiment shown in FIG. 37, since the bottom of the recess produced by imprint molding is an insulating polymer (insulating film), the etching removal process of the conductive polymer at the bottom of the recess shown in FIG. 36 is unnecessary. Simplify the process. In addition, since there is no etching process, the thickness of the conductive polymer is the same as the depth of the electrode of the capacitor, so that a very accurate capacitor can be formed.

FIG. 38 is a diagram showing another embodiment of a method for manufacturing a sensor of the present invention using an imprint method. In FIG. 38, the mold (or part thereof) used in the imprint method is used as it is as part of the sensor. A mold 1305 having a mold pattern 1306 for forming a recess is pushed into the substrate 1301 on which the insulating polymer 1302 and the conductive polymer are formed, so that the tip of the mold pattern 1306 for forming the recess enters the insulating polymer. The mold 1305 is a substrate on which a mold pattern 1306 for forming a recess is attached and supported, and is a substrate that supports the substrate side wall of the sensor in the future. Although it is easy to handle the mold 1305 as an insulating substrate in the process, a semiconductor substrate or a conductor substrate may be used as long as the electrodes are electrically separated. The following description will be made assuming that the mold 1305 is an insulating substrate.

Since the mold substrate 1305 that supports the mold pattern is left as a part of the sensor, a mold support substrate that further supports the mold substrate 1305 may be attached to the mold substrate 1305 if it cannot be made too thick. This adhesive is used or attached electrostatically, but it may be attached by other methods. For example, the mold substrate 1305 is an insulating substrate having magnetism such as ferrite, and an electromagnet is provided on the mold support substrate side to attach the mold substrate 1305. Since the mold substrate 1305 is left on the sensor side, the mold substrate 1305 can be separated from the mold support substrate if the function of the electromagnet is lost. The thickness of the mold substrate 1305 is about 10 μm to 1000 μm. If there is no problem in characteristics, it may be thicker or thinner.

A mold pattern 1306 for forming a recess is formed on the mold substrate 1305. The mold pattern 1306 can be formed as follows, for example. A polymer (resin) having a softening temperature T1306 is applied on the mold substrate 1305, and formed by dipping, spraying, or screen printing. This polymer 1306 is preferably a thermoplastic resin. Next, a mold having a pattern capable of forming a mold pattern is pressed to form a mold pattern 1306 by an imprint method or the like. It is cured by heat treatment at an appropriate temperature. Alternatively, it may be cured by UV irradiation.

Next, an insulating polymer (resin) having a curing temperature T1302 and a conductive polymer (resin) having a curing temperature T1303 are applied on the mold substrate 1301, and formed by dipping, spraying, or screen printing. These polymers are preferably thermosetting polymers. A mold 1305 having a mold pattern 1306 is inserted into the polymer and pressed so that the tip of the mold pattern 1306 becomes an insulating polymer. Next, the temperature is raised and the insulating polymer 1302 and the conductive polymer 1303 are cured. Therefore, T1302 <T1303 <T1306 is preferable. That is, first, the insulating polymer 1302 is cured at a temperature between T1302 and T1303, and then the conductive polymer 1303 is cured at a temperature between T1303 and T1306.

An opening 1310 is opened in part or all of the upper surface of the mold pattern 1306 of the mold substrate 1305. If there is no problem in the process, the opening 1310 may be open. However, if there is a problem in pressure transmission when the mold pattern 1306 is inserted into the polymers 1303 and 1302, the opening 1310 may be made of polymer (resin), rubber, metal, It may be filled. For example, the same material as the mold pattern 1306 may be used. Preferably, the material is a material that melts above a certain temperature (T1310). There is a relationship of T1302 <T1303 <T1310, and T1310 is preferably closer to T1306. After the insulating polymer 1302 and the conductive polymer 1303 are cured, the polymer 1310 and the material 1306 are melted at a temperature equal to or higher than T1310 or T1306. (The softening temperature of the mold substrate is equal to or higher than this temperature.) The melted material is allowed to flow outside through the opening 1310, thereby forming a recess 1307. If it is difficult to flow out of the opening, it is better to suck out the outside with a low pressure. Alternatively, the material of the mold pattern 1306 may be a material having a sublimation property, a material having a low boiling point (a material having a boiling point slightly higher than the melting point or softening point) or a volatile material, and may be vaporized and taken out. Alternatively, the polymer may be decomposed and the gas discharged to the outside. Examples of the polymer having sublimability include melamine and oil-soluble dyes.

Next, contact holes 1311 are formed in the insulating substrate 1305 to contact the conductive polymer substrate sidewalls 1303 (1303-1, 2, 3) (for example, when the insulating substrate 1305 is a glass substrate, a photosensitive film Then, a window is formed by dry etching (CF4 gas or the like) or wet etching (hydrofluoric acid-based etchant), or the mold substrate 1305 can be provided in advance as in 1310.), a conductor film Are stacked on the contact hole 1311 and the insulating substrate 1305 and patterned to form conductor films / electrodes / wirings 1312 (1312-1, 2, 3, 4). As a result, a capacitor is formed in which the space capacity is the recess 1307-2 and the conductive polymer substrate sidewalls 1303-1 and 1303-2 sandwiching the space capacitor are used as counter electrodes. For example, the substrate sidewall 1303-2 is accelerated and the recess 1307 is formed. When the sound wave introduced into -1 is deformed, the space capacity of the recess 1307-2 changes, and the change in the capacitor capacity can be detected. Similarly, a capacitor is formed in which the space capacity is the recess 1307-3 and the conductive polymer substrate side walls 1303-3 and 1303-4 sandwiching the space capacitor are used as counter electrodes. For example, the substrate side wall 1303-3 has acceleration or recess 1307. When it is deformed by the sound wave introduced to -1, the space capacity of the recess 1307-3 changes, and a change in the capacitor capacity can be detected.

In this way, the recess 1307 (the trace of the mold pattern 1306) can be formed without pulling out the mold substrate 1305 and the mold pattern 1306, and the mold substrate 1305 becomes an insulator substrate as it is, so that the process is simple. In addition, it is technically easy because it does not adhere (already adhered) to the substrate side wall (for example, 1303-2 or 1303-3) of a thin polymer (thickness). In the present embodiment, a recess can be formed in a semiconductor substrate or the like, and a sensor can be formed in the recess. Therefore, an IC with a sensor can be manufactured with one chip.

FIG. 39 is a diagram illustrating a sensor in which a concave portion is formed in an insulating polymer by an imprint molding method, and the mold substrate is used as an insulating substrate on the concave portion, and a manufacturing method thereof. First, the structure of the mold will be described. The mold of this embodiment includes a mold substrate 1405 that becomes an insulating substrate attached to the upper surface of the substrate side wall of the sensor, and a mold pattern 1406 (1406-1, 2, 3) that forms a recess of the sensor. The mold substrate 1405 is preferably an insulator substrate, but a semiconductor substrate or a conductor substrate can also be used. Although the thickness depends on the thickness of the sensor, it is 10 μm to 1000 μm, but it may be thinner or thicker. However, in the case of a semiconductor substrate or a conductor substrate, an insulating region is formed between regions in contact with each electrode so that the capacitor electrodes facing each other are electrically separated. Hereinafter, the mold substrate 1405 will be described as an insulator substrate. Examples of the insulating substrate include a glass substrate, a quartz substrate, a ceramic substrate, an insulating plastic substrate, various polymer insulating substrates, and insulating rubber.

A mold pattern 1406 for forming a sensor recess is attached to the mold substrate 1405. The mold pattern material is, for example, a polymer or rubber, and is a mold material that can be imprinted into the liquid or gel polymer 1402, and reacts with the liquid or gel polymer 1402 during the process and during use. It is desirable that the material is a material that does not change, and the volume change (variation) of the concave portion is small. In the mold pattern 1406 (1406-1, 2, 3), as shown in FIG. 39A, the pattern of the conductor film 1407 (1407-1, 2, 3, 4) is formed. An opening 1410 is formed in a part or all of the region of the mold substrate 1405 where the mold pattern 1406 (1406-1, 2, 3) for forming the recesses is formed. The opening 1410 has a filling material. And is flat at the same level as the substrate surface of the mold substrate 1405. This filling material is, for example, a thermoplastic polymer having a softening point (or melting point) T1410. Alternatively, a metal or an inorganic material having a melting point T1410 may be used.

Further, contact holes 1408 (1408-1, 2, 3) for making contact with the conductor film 1407 are formed in the mold substrate 1405. This contact hole 1408 is also filled with a filling material, and is flat at the same level as the substrate surface of the mold substrate 1405. This filling material is, for example, a thermoplastic polymer having a softening point (or melting point) T1408. Alternatively, a metal or an inorganic material having a melting point T1408 may be used.

The material constituting the mold pattern 1406 is, for example, a thermoplastic polymer having a softening point (or melting point) T1406. Alternatively, for example, a metal or an inorganic material having a melting point T1406 may be used. The mold pattern 1406 is formed by forming a thermoplastic polymer 1406 on the mold substrate 1405 by a coating method, a dipping method, a screen printing method, or the like. The mold pattern 1406 may be formed by an imprint molding method or may be patterned by a screen printing method. The depth H31 of the mold pattern 1406 is determined by the depth of the recess.

After forming the mold pattern 1406, a conductor film 1407 is stacked on the mold pattern 1406. Further, a photosensitive film is stacked on the conductor film 1407, and necessary patterning of the photosensitive film is performed to perform necessary wiring of the conductor film 1407. The region A serving as the polymer substrate side wall is narrow, but in the case of an acceleration sensor or a microphone, patterning of the conductor film 407 is unnecessary in the portion A (conductor film 1407-2 or 1407-3). If the film is a positive type, there is no problem in patterning since the photosensitive film remains after development in the unexposed part. On the other hand, since the portion B of the mold substrate 1405 having a large substrate surface side (conductor films 1407-1 and 1407-4) is a wide region, the thickness of the positive resist does not become so thick (in the case of a coating method or a dip method) However, when a photosensitive dry film is used, it is possible to suppress the increase in thickness.) The photosensitive film can be sufficiently exposed and exposed with a deep focal depth. Thus, the conductive film can be sufficiently patterned, and the conductive film can be etched based on the pattern. Further, as shown in FIG. 39A, the conductive film 1407 is removed by etching at the tip of the mold pattern 1406. Since the tip of the mold pattern 1406 is a region where the photosensitive film is thin, the positive type photosensitive film can be sufficiently exposed and can be easily removed. Therefore, the conductive film 1407 at the tip of the mold pattern 1406 is removed by etching. Is easy.

Since the mold substrate 1405 remains on the sensor side, the mold substrate 1405 is attached to the mold support substrate 1414 for supporting and pressing the mold substrate 1405 with a press using, for example, an adhesive layer 1412. The adhesive layer 1412 is a thermoplastic resin having a softening temperature (melting point) T1412. Alternatively, if the mold substrate 1405 is an insulating substrate such as magnetic ferrite, the mold support substrate 1414 can be provided with an electromagnet, and the mold substrate 1405 can be attached to the mold support substrate 1414 with an electromagnet. Since the agent 1412 is not strong, the process is simplified.

On the other hand, on the substrate side on which the sensor is formed, the insulating polymer 1402 is formed on the substrate 1401 using a coating method, a dipping method, a screen printing method, a dry film adhesion method, or a melting method. The insulating polymer 1402 is a thermosetting polymer, and its curing temperature is T1402. A mold substrate 1405 having a mold pattern 1406 is pushed into an insulating polymer 1402 in a liquid state, a softened state, or a molten state, the mold substrate 1405 and the polymer 1402 are brought into contact with each other, and the polymer 1402 is pressed by the mold substrate 1405. The temperature of the polymer 1402 is held at T1402 or higher (holding temperature T39-1), and the polymer 1402 is cured. At this time, the mold pattern 1406, the filling material 1408, the filling material 1410, and the adhesive 1412 are not softened. That is, T1402 <T39-1 <T1406, T1408, T1410, and T1412. (Fig. 39 (b))

After the polymer 1402 is cured, the temperature is further raised (this temperature is T39-2), and the mold pattern 1406, the filling material 1408, the filling material 1410, and the adhesive 1412 are softened (or melted). That is, T39-2> T1406, T1408, T1410, T1412. First, the adhesive 1412 is melted and the mold support substrate 1414 is removed. Next, the molten filling material 1410 is removed, and the melted mold pattern 1406 is removed from the opening 1410. (Indicated by the arrow in FIG. 39 (c)) Further, the contact hole 1408 (1408-1, 2, 3, 4) connected to the conductor film 1407 (1407-1, 2, 3, 4) is filled. The material being melted is removed. Note that if the filling material of the contact hole 1408 is a conductor material, it does not need to be removed, and thus it does not need to be melted. That is, in this case, T1408> T39-2 may be satisfied. As a result, recesses 1416 (1416-1, 2, 3) are formed, and the conductor film 1407 (1407-1, 2, 3, 4) is the inner surface of the recess 1416 (1416-1, 2, 3), that is, The insulating polymer 1402 automatically remains on the vertical side wall side of the substrate side wall 1402 (1402-1, 2, 3, 4) and the upper surface of the substrate side wall 1402 (1402-1, 2, 3, 4), and the wiring pattern 1407 (1407-1, 2, 3) is formed.

Next, a conductor film is laminated and patterned to form a conductor film / electrode / wiring 1412 (1412-1, 2, 3, 4) on the insulator substrate 1405. When the filling material filled in the contact hole 1408 is not a conductor material, this portion is opened. Therefore, a conductor film can also be laminated on the contact hole 1408 and connected to the conductor film wiring 1407. Note that the conductive film is stacked by a CVD method or a PVD method. The conductor films 1407, 1408, and 1412 are made of aluminum, copper, titanium, nickel, platinum, chrome, tungsten, molybdenum, or an alloy thereof. Although it is also laminated in the recess 1416 (1416-1, 2, 3), it is very thin, so during etching when forming the conductor film / electrode / wiring 1412 (1412-1, 3, 3, 4), If the photosensitive film in the opening 1410 is removed and opened, the etching can be easily removed. In particular, the conductor film (1412) formed in the recess is easily etched by putting an isotropic etching process in the etching process. After this, the opening to the recess can be further increased, or a process for closing the opening can be added. (FIG. 39 (d))

As described above, the sensor can be manufactured by a very simple process by the structure and process of the sensor shown in FIG. In addition, since the substrate side wall 1402 (1402-2, 3) having a narrow width is formed after the upper surface is fixed by the mold substrate 1405, it is formed by an extremely safe process. As a result, the upper surface of the substrate side wall 1402 (1402-1, 2, 3, 4) is fixed by the mold (insulator) substrate 1405, and the lower surface is fixed by the insulating polymer 1402.
The opening 1410 and the contact hole 1408 are formed in the mold substrate 1405 in advance. However, after the polymer 1402 is cured and the mold support substrate 1414 is removed, a photosensitive film is formed and the photosensitive film is patterned to form the opening. 1410 and contact holes 1408 can also be formed. After the opening 1410 is formed, the mold pattern 1406 can be melted and removed. In this case, it is not necessary to fill the opening 1410 and the contact hole 1408 with a filling material in advance, and it is not necessary to melt and remove them.

In addition, if the material of the mold pattern 1406, the filling materials 1408 and 1410, and the adhesive material 1412 are sublimable materials or materials whose boiling points are close to the melting point, these materials can be vaporized and removed, so that the removal process can be performed. It becomes easy. Needless to say, the melting point of the conductor film 1407 is higher than the process temperature so as not to be melted or deformed during the process. Further, the sensor shown in FIG. 39 can be mounted in the same chip as the transistor or IC by forming a recess in the semiconductor substrate. In addition, if the sensor is formed on the surface opposite to the surface on which the IC or the like is formed, the size of the sensor-mounted IC chip can be reduced.

The sensor of the present invention can also be applied to a gyro sensor (angular velocity sensor). An object of mass m receives a force of mrω ^{2 due to} the angular velocity ω. For example, when a rotational force (angular velocity ω) is applied to the sensor having the structure shown in FIG. 10, the change in capacitance of each capacitor is different, so that the rotation center direction can be determined from the capacitor having the largest capacitance change. If the rotation center is not located at the center of the circle shown in FIG. 10, the position of the capacitor having a large capacitance change changes. Therefore, the rotation center can be obtained from the rotation center direction after time t seconds. If a plurality of sensors are arranged, the center of rotation can be immediately recognized and the accuracy can be improved. Also, the angular velocity ω can be determined from the magnitude of the force. Furthermore, the moving speed v is also known. If the number of divided electrodes is increased, the accuracy of the angular velocity ω, the moving velocity v, and the rotation center can be increased. A plurality of three-dimensional arrangements (arranged in various directions) can be used as a three-dimensional angular velocity sensor.

The sensor structure of the present invention can be used not only for acceleration sensors, microphones and angular velocity sensors, but also for various other sensors. For example, the present inventor has shown various sensor inventions including a pressure sensor in Japanese Patent Application No. 2012-016017, but it goes without saying that the present invention can also be applied to various sensors shown in Japanese Patent Application No. 2012-016017. . As an example, FIG. 40 shows an example in which the sensor structure and its manufacturing method shown in FIG. 39 are applied to the structure of the pressure sensor and its manufacturing method.

FIG. 40 is a diagram showing a structure of a pressure sensor of the present invention using an imprint method and a manufacturing method thereof. Elements similar or identical to those in FIG. 39 use the same reference numerals. The mold substrate 1405 has a mold pattern 1406 (1406-1, 2, 3, 4) for forming a concave portion in the polymer using an imprint method. A conductor film 1407 is patterned on the mold pattern 1406 (1406-1, 2, 3, 4) and the mold substrate 1405. The mold pattern 1406 is formed by imprinting or photolithography. The mold pattern 1406 is, for example, a polymer material (polymer) having a softening temperature or a melting point T1406, and is preferably a thermoplastic resin. The conductor film is a polycrystalline silicon film, an amorphous silicon film, a silicide film such as WSix, MoSix, or TiSix laminated by CVD, PVD, or ion plating, various metal films, various alloy films, conductive nanotubes, conductive Graphene, conductive polymer, and the like. Since it is a laminated film by a CVD method, a PVD method, an ion plating method, etc., it is laminated not only on the upper surface of the mold pattern 1406 but also on the side surface and the bottom thereof.

As shown in FIG. 40A, the conductor formed on the convex patterns 1406-2 and 1406-3 (side surface and upper surface) of the mold pattern forming the concave portions 1416-2 and 1416-3 serving as the capacity spaces. Of the film 1407, the conductor film on the ceiling (shown by arrow C) of the convex patterns 1406-2 and 1406-3 is removed. As a method for removing the conductor film, for example, a positive photosensitive film is coated by a coating method or a spray method, and then the photosensitive film on the ceiling portions (indicated by arrow C) of the convex patterns 1406-2 and 1406-3. Can be easily exposed, and the photosensitive film in this portion can be removed. It is necessary to pattern the conductor film at the bottom of the mold pattern 1406, that is, the portion B on the mold substrate 1405. Since this region can be made wider than the other region (A region), the photosensitive film is also relatively thin. In addition, since patterning with high accuracy is unnecessary, patterning at the B portion is not a problem. (Because the exposure time can be taken sufficiently long, exposure is possible even if the photosensitive film is thick.) Also, the concave part of the mold pattern (A region, this part is a narrow substrate side wall (diaphragm) and the photosensitive film is thick. Since the photosensitive film becomes thicker, the exposure becomes insufficient. However, since it is not necessary to remove the photosensitive film in the area A, there is no problem if it is a positive photosensitive film. When the photosensitive film is a dry film, the bottom of the mold pattern 1406 does not become so thick that the photosensitive film can be patterned without any problem. Furthermore, if an electrodeposition resist method is used, there is no problem in patterning.

In the mold substrate 1405, a part or the whole of the region where the mold pattern 1406 is formed may be opened to form the opening 1410, and the part may be filled with a filling material. Further, contact holes 1408 (1408-1, 2, 3, 4, 5) for making contact with the conductor film 1407 may be formed and filled therewith. If a conductor film is used as the filling material of the contact hole 1408, it can be used as a connection material with the conductor film 1407 in the contact hole 1408 as it is. The contact hole 1408 may be filled with a polymer or the like and removed later. The opening 1410 and the contact hole 1408 can be formed by irradiating the mold substrate 1405 with a laser, or can be formed by dry etching or wet etching after forming and patterning a photosensitive film. If the filling material 1408 or 1410 is made of the same material as the mold pattern 1406 (for example, a thermoplastic polymer), the mold pattern 1406 can be formed simultaneously with the formation, and the process can be simplified.

When pressing is not possible only with the mold substrate 1405 with the mold pattern 1406, the mold substrate 1405 with the mold pattern 1406 is attached to the mold support substrate 1414 with an adhesive 1412 or the like, and the mold support substrate 1414 is set in a press device. It may be pushed into the polymer 1402 formed in the above. As described above, when a ferrite substrate which is a magnetic material is used as the mold substrate 1405, the mold substrate 1405 can be directly attached to the mold support substrate 1414 by using an electromagnet without using the adhesive 1412.

Next, the mold substrate 1405 and the like are imprinted in the insulating polymer 1402 to cure the insulating polymer 1402. (FIG. 40 (b)) The insulating polymer 1402 is a liquid polymer deposited on the substrate 1401 by dropping, spraying, spin coating, dipping, etc., and then pre-baked to make it soft or gel if necessary. Then, the mold substrate 1405 with the mold pattern 1406 is pressed (imprinted) into the insulating polymer 1402. Alternatively, an insulating polymer film is attached onto the substrate 1401 and baked to be softened or melted to push the mold substrate 1405 with the mold pattern 1406 into the insulating polymer (imprint). The insulating polymer 1402 is preferably a thermosetting resin or a photocurable resin. When the curing temperature of the insulating polymer 1402 is T1402, a material that lowers the softening temperature T1406 of the polymer or the like constituting the mold pattern 1406 is selected as T1402. The mold substrate 1405 with the mold pattern 1406 is pressed into the insulating polymer 1402 (the mold substrate 1405 is in contact with the insulating polymer 1402 and further pressed (pressed). The insulating polymer 1402 is pressed at a temperature between T1402 and T1406. Harden.
Insulating polymers include, for example, fluororesin film, polyethylene film, PMMA (polymethyl methacrylate), polycarbonate, polystyrene, acrylic resin, ABS resin, vinyl chloride, liquid crystal polymer, polyvinyl alcohol (PVA), polypropylene (PP), polyethylene ( PE), N-methyl-2-pyrrolidone (NMP), acrylic resin (PMMA), polydimethylsiloxane (PDMS), polyimide resin, polylactic acid, various rubbers (natural rubber and synthetic rubber), or polyvinylidene fluoride (PVDF) , Ferroelectric polymers such as vinylidene fluoride-trifluoroethylene (VDF / TrFE) copolymer, vinylidene fluoride tetrafluoroethylene (VDF-TeFE), vinylidene cyanide-vinyl acetate copolymer, nylon-11 A variety of polymeric materials such as piezoelectric polymer such as a polar polymer.
Alternatively, the insulating polymer may be an organic or inorganic silicate glass, in which case it is imprinted into a liquid or gel silicate glass, and then the silicate glass is cured (solidified). In the case of a polymer, a method of using electromagnetic waves such as ultraviolet rays may be used as a method of curing.

After the insulating polymer 1402 is cured, the mold support substrate 1414 is removed. In the case of the magnetic body 1405, the adhesive layer 1412 is not provided and can be easily separated if the electromagnet function is lost. In the case where the adhesive layer 1412 is used, the mold support substrate 1414 can be easily detached from the mold substrate 1405 if the adhesive layer 1412 is made of a thermoplastic resin and has a temperature higher than its softening (melting) temperature T1412. Next, the process temperature is maintained at a temperature equal to or higher than T1406, and the mold pattern 1406 is melted (softened). At this time, the filling material of the opening 1410 is also softened and melted. The melted / softened polymer 1406 is taken out from the opening 1410. If the outside is decompressed and sucked out, the polymer 1406 can be easily taken out. If a material higher than the process temperature is used as the melting point T1407 of the conductor film 1407, the conductor film 1407 will not melt.

As a result, as shown in FIG. 40C, recesses 1416 (1416-1, 2, 3, 4) can be formed in the insulating polymer substrate 1402, and the substrate sidewalls 1402 (1402-1, 1402-1, 1402,. 2, 3, 4, 5), and the upper and side surfaces of these substrate side walls 1402 (1402-1, 2, 3, 4, 5) (also the inner surface of the recess 1416) and the bottom of the recess 1416 The conductor film / wiring 1407 (1407-1, 2, 3) is formed. The conductor film / wiring 1407 (1407-1, 2, 3) adhering to the outer surface and upper (bottom) surface of the mold pattern 1406 and the mold substrate is insulative when the insulating polymer 1402 is cured. The surface of the polymer 1402 (after adhering to the inner surfaces of the substrate side walls 1402-1, 2, 3, 4, 5 and the top and bottom surfaces of the insulating polymer 1402 is softened and melted and taken out to the outside) Also remains.

Thereafter, a conductor film 1412 is laminated on the mold substrate and patterned as a desired conductive film / electrode / wiring 1412 (1412-1, 2, 3, 4, 5). When the contact hole 1408 is already formed in the insulator substrate 1405 and the contact hole 1408 is filled with the conductor film, the conductor film 1412 may be laminated thereon. When the contact hole 1408 is filled with a polymer or the like, the polymer or the like may be softened and melted and taken out. Thereafter, a conductor film is stacked in the contact hole 1408 and connected to the conductor film / electrode / wiring 1407. When the opening 1410 and the contact hole 1408 are not formed in the mold substrate 1405 in advance, a photosensitive film is formed on the insulating substrate 1405 and patterned. After that, the insulating substrate 1405 is etched (wet or dry) to form an opening 1410 and a contact hole 1408.

As described above, a capacitance-type pressure sensor can be manufactured. Insulating polymer substrate side wall 1402 (1402-2, 3, 4) becomes a diaphragm sandwiched by recesses 1416 (1416-1, 2, 3, 4) on both sides, and due to the pressure difference between these adjacent recesses 1416 The substrate side wall 1402 of the insulating polymer that is a diaphragm is deformed. That is, the upper surface of the substrate side wall 1402 is regulated by the insulator (mold) substrate 1405 and the lower surface of the substrate side wall 1402 is regulated by the bottom portion (1402B) of the insulating polymer 1402, but the other portions are not regulated. The insulating polymer substrate side wall 1402 is deformed. For example, the substrate side wall 1402-2 can apply the pressure P2 of the recess 1416-1 (the pressure P2 can be applied through the opening 1410) and the pressure P1 of the recess 1416-2 (the pressure P1 through the opening 1410). Deformation due to pressure difference with The substrate side wall 1402-3 is not deformed because the pressure in the concave portions 1416 (1416-2 and 1416-3) on both sides is the same as P1, but the distance between the electrodes of the concave portion 1416-2 (the width W1 of the concave portion 1416-2) changes. Therefore, since the capacitor capacity measured by the opposing electrodes 1407-1 and 1407-2 changes, the pressure difference P2-P1 can be calculated.

Similarly, the substrate side wall 1402-4 can apply the pressure P2 of the recess 1416-4 (the pressure P2 can be applied through the opening 1410) and the pressure P1 of the recess 1416-3 (the pressure P1 through the opening 1410). Deformation) due to the pressure difference. The substrate side wall 1402-4 is not deformed because the pressure in the concave portions 1416 (1416-2 and 1416-3) on both sides is the same as P1, but the distance between the electrodes of the concave portion 1416-3 (the width W2 of the concave portion 1416-3) changes. Therefore, since the capacitor capacity measured by the opposing electrodes 1407-3 and 1407-4 changes, the pressure difference P2-P1 can be calculated.

Or if the recessed parts 1416-1 and 1416-3 are made into the pressure P2, the board | substrate side wall 1402-2 and 1402-3 will change to a mutually reverse direction. For example, when P1> P2, the substrate side walls 1402-2 and 1402-3 are deformed in the direction in which the concave portion 1416-2 is expanded, and when P1 <P2, the substrate side walls 1402-2 and 1402-3 are the concave portion 1416-. It is deformed in the direction in which 2 is depressed. Therefore, since the capacitor capacity measured by the opposing electrodes 1407-1 and 1407-2 changes more greatly than the above, the pressure difference P2-P1 can be calculated and the sensitivity is increased.

Thus, if the structure of this invention is used, it can be applied also to a pressure sensor. If a resistor is formed on the side wall of the substrate, a pressure sensor using a piezoresistor can be manufactured. Further, if one of the openings 1410 to which P1 or P2 shown in FIG. 40D is applied is closed (for example, a glass substrate is attached to the opening), the pressure of P1 or P2 can be confined in the recess. Therefore, an absolute pressure sensor can also be produced. Note that the pressure sensor shown in FIG. 40 can be fabricated in a recess if a recess is formed in the semiconductor substrate and the insulating polymer described in FIG. 40 is formed in the recess. Needless to say, the contents (structure, process, etc.) described so far in the specification can also be applied to the pressure sensor.

When forming recesses or through-holes (through-grooves) in a polymer by imprint molding, not only can the capacitance change of the capacitor be detected by using a piezoelectric polymer for the polymer, but also the deformation of the substrate sidewall as a diaphragm. It is possible to measure the voltage change due to the polarization of the electric charge. Therefore, it is possible to detect the magnitude and direction of sound waves and force (acceleration, angular acceleration, pressure) from both of them. For example, in FIG. 16, it may be considered that the polymer 615 is a piezoelectric polymer. At this time, in the substrate side wall 615-1, the electrode forms only one side 625-2, but is also formed on the side surface of the substrate side wall 615-1 on the recess 621-1 side (this electrode is referred to as 625-6). ). 625-2 and 625-6 are electrodes formed on the side surface of the substrate side wall 625-2 which is a piezoelectric film, and are not connected to each other. A potential difference is generated between the conductor film electrodes 625-2 and 625-6 due to the electric charge generated on the side surface of the piezoelectric film 625-2 due to the deformation of the substrate side wall 625-2. And the magnitude and direction of force (acceleration, angular acceleration, pressure) can be detected. The substrate side wall 615-2 is also formed on the side surface of the substrate side wall 615-2 on the recess 621-1 side. As described above, not only the capacitance change of the capacitor having the concave portions 621-2 and 621-3 as the capacity space, but also the potential difference between the piezoelectric film substrate side wall 615-1 and 615-2, the change in the sound wave and Since the magnitude and direction of force (acceleration, angular acceleration, pressure) can be detected, sensitivity and accuracy can be increased.
Examples of the piezoelectric polymer include various piezoelectric polymers such as polyvinylidene fluoride (PVDF), polyamino acid, chiral polymer-based piezoelectric polymer, and ferroelectric liquid crystal. By using the piezoelectric polymer as the polymer shown in the drawings, explanations, and other specifications shown in FIGS. 36 to 40, the effects of piezoelectricity as described above can be used to generate sound waves and force (acceleration, angular acceleration). ), Pressure) can be detected and the sensitivity and accuracy can be increased. If a piezoelectric polymer is used, the device of the present invention can be used as a speaker.

As described above, the force sensor (acceleration sensor, angular velocity sensor, pressure sensor, etc.) or microphone using the deformation of the side wall of the substrate formed between the substrate and the through-hole or recess of the present invention is used. The size of the speaker can be made very small as compared with a speaker produced in parallel with the conventional substrate surface. For example, if a 300 μm × 300 μm diaphragm is required, conventionally, a chip size of at least 0.5 mm × 0.5 mm was required. In the case of the present invention in which the diaphragm is manufactured in the thickness direction of the substrate, When the substrate is viewed in plan, two 300 μm × 10 μm diaphragms are arranged, the size of the central through hole is 30 μm, and the through hole width of the capacity space is 20 μm × 2, which is about 0.4 mm × 0.1 mm It becomes. Accordingly, the area occupied by the substrate plane is about 1/6. If the same substrate is used, the number is 6 times, so the manufacturing cost is about 1/6. In addition, since the chip size is reduced, the mounting cost is also reduced. Since the area is also small, the chip size of the IC does not become too large even if it is incorporated in the IC, so the loss cost is also reduced. In addition, when a semiconductor substrate such as a silicon substrate is used as the substrate 611, it is possible to mount a pressure sensor and an IC having various functions on the same substrate or chip together with a function for controlling or calculating the pressure sensor. it can. Furthermore, compared to the conventional method, the mounting area can be reduced, the mounting size can be reduced, and the number of connection wirings can be reduced. This simplifies the process, greatly reduces manufacturing costs, improves reliability, and improves yield. Can be realized.

The present invention can also be used for an electric double layer capacitor. FIG. 41 is a diagram showing the structure of the electric double layer capacitor. Through holes or recesses 2014 (2014-1, 2, 3, 4, 5) are formed in the substrate 2011, and substrate side walls 2011 (2011-1, 2, 3, 4, 5, 6) are formed therebetween. The When the substrate 2011 is a conductor substrate, adjacent substrate sidewalls are prevented from conducting as through holes penetrating from the first surface (front surface) to the second surface (back surface) of the substrate 2011. When the substrate 2011 is an insulator substrate, a conductor film is formed on the side surface of the substrate side wall 2011 (2011-1, 2, 3, 4, 5, 6), and a through hole or a recess 2014 (2014-1, 2). The conductive films on the side surfaces facing each other in 3, 4, 5) are patterned so as not to conduct. In the case of the through hole, thin plates (insulating substrates) 2012 and 2013 are attached to both surfaces (first surface and second surface) of the substrate 2011. In the case of a recess, a thin plate (insulating substrate) (for example, 2013) is attached to the surface side where the recess opens. An electrolytic solution or an electrolyte gel is put into the through-hole or the recess 2014 (2014-1, 2, 3, 4, 5) or sealed with a solid electrolyte. In the case of putting an electrolytic solution or an electrolyte gel, for example, a thin plate (insulating substrate) adheres to both surfaces (first surface and second surface) of the substrate 2011 while being immersed in the electrolytic solution or the electrolyte gel. Alternatively, after attaching a thin plate (insulating substrate) to both surfaces (first surface and second surface) of the substrate 2011, a thin plate (insulating) covering each through hole or recess 2014 (2014-1, 2, 3, 4, 5). A hole is made in the substrate), an electrolytic solution or an electrolyte gel is put through the opening hole, and each through hole or recess 2014 (2014-1, 2, 3, 4, 5) is filled with the electrolytic solution. If the plug is closed, the electrolyte and electrolyte gel will not leak.
The solid electrolyte is, for example, a polymer (polymer) solid electrolyte. After forming the through-hole or recess 2014 (2014-1, 2, 3, 4, 5), the softened polymer or melted polymer is applied, dipped, dispensed, screen-printed, etc., and the through-hole or recess 2014 (2014- 1, 2, 3, 4, 5) are filled with a polymer and heat-treated to solidify the polymer. Thereafter, a thin plate (insulating substrate) is attached to both sides or one side of the substrate 2011. As a result, adjacent side walls of the substrate constitute a capacitor (capacitor) and become an electric double layer capacitor. Capacitance can be increased by electrically connecting every other substrate sidewall. For example, in FIG. 41, the substrate side walls 2011-2 and 2011-4 are connected to be combined with the electrode A, and the counter electrode side is connected to 2011-3 and 2011-5 to be combined with the electrode B. The electric double layer capacitor as shown in FIG. 41 can realize an ultra-small capacitor.

FIG. 42 is a diagram showing the structure of another electric double layer capacitor. In FIG. 42, a recess 2022 is formed in a semiconductor substrate 2021 such as a silicon substrate, and the recess 2022 is filled with a polymer 2021. A recess 2024 (2024-1, 2, 3) is formed in the polymer 2021, and a conductor film electrode 2025 is formed on the inner surface of the recess 2024 (2024-1, 2, 3). For example, conductor film / electrodes 2025-1-1 and 2025-1-2 are formed on the inner surfaces facing each other in the recess 2024-1. An electrolytic solution, an electrolyte gel, or a solid electrolyte 2027 is formed in the recess, and a thin plate (insulating substrate) 2028 is attached to the first surface (front surface) of the semiconductor substrate 2021 to close the recess 2022. As a result, an electric double layer capacitor is configured by the facing inner surface electrodes 2025-1-1 and 2025-1-2 and the electrolyte 2027 in the recess 2022-1. Since a large number of recesses 2024 are formed, the capacitance of the capacitor can be increased by connecting the opposing electrodes together into the electrodes A and B. In addition, when forming a recessed part in a polymer, a recessed part can also be formed using the imprint method. Since the electric double layer capacitor shown in FIG. 42 can be formed in a semiconductor substrate, an IC or a transistor formed in the semiconductor substrate can be moved using a discharge voltage from the electric double layer capacitor, and an ultra-small size can be obtained. Self-standing devices (devices that operate with only one chip) can be manufactured.

FIG. 43 is a diagram showing the structure of still another electric double layer capacitor. In FIG. 43, a recess 2032 is formed in a semiconductor substrate 2031 such as a silicon substrate, and an electrolyte 2033 is filled in the recess 2032. In the recess 2032, an electrode pattern 2036 (2036-1, 2, 3, 4, 5, 6) is formed on another substrate (insulator substrate) 2035, and the other substrate (insulator substrate) 2035 is inserted. To do. Since a large number of recesses 2032 are formed in the semiconductor substrate 2031, another substrate (insulator substrate) 2035 on which a large number of electrode patterns 2036 are formed is inserted while aligning with the respective recesses. Another substrate (insulator substrate) 2035 is attached to the semiconductor substrate 2031 as it is. Therefore, the length of the electrode pattern 2036 (2036-1, 2, 3, 4, 5, 6) needs to be shorter than the depth of the recess. If the distal end side of the electrode pattern 2036 (2036-1, 2, 3, 4, 5, 6) is a free end and may be deformed when inserted into the recess 2032, the electrode pattern 2036 (2036-1, 2, 3) 4, 5, 6), the insulator substrate 2037 may also be attached. In that case, when the electrolyte 2033 is difficult to enter between the electrode patterns 2036 (2036-1, 2, 3, 4, 5, 6), an appropriate opening may be provided in the insulator substrate 2037. When the electrolyte 2033 is used as it is in an electrolytic solution or an electrolyte gel, it may be left as it is. However, when a solid electrolyte is used as the electrolyte, a polymer (polymer) material is used as the electrolyte, and when the electrolyte 2033 is filled, the electrolyte 2033 is liquid. Then, another substrate (insulator substrate) 2035 is inserted and then heat treated to solidify the electrolyte 2033. As a result, the adjacent electrodes 2036 form an electric double layer capacitor in which an electrolyte enters between them. Since the electric double layer capacitor shown in FIG. 43 can be formed in a semiconductor substrate, an IC or a transistor formed in the semiconductor substrate can be moved using a discharge voltage from the electric double layer capacitor. Self-standing devices (devices that operate with only one chip) can be manufactured. The double layer capacitor shown in FIG. 43 can also be used as a single electric double layer capacitor if an insulating substrate is used as the substrate 2031.

The electrolytic solution or the electrolyte gel is, for example, an inorganic brine electrolysis such as lithium salt such as lithium hexafluorophosphate (LiPF ₆ ), sulfuric acid, potassium hydroxide solution, acetonitrile, propylene carbonate, tetrafluoroammonium borate, Quaternary such as tetraethylammonium tetrafluoroborate (Et ₄ NBF ₄ ), tetramethylammonium tetrafluoroborate, tetrapropylammonium tetrafluoroborate, tetrabutylammonium tetrafluoroborate, trimethylethylammonium tetrafluoroborate (Et ₃ MeNBF ₄ ) Ammonium salt, triethylmethylammonium tetrafluoroborate, diethyldimethylammonium tetrafluoroborate, N-ethyl-N-methylpyrrolidinium tetrafluoroborate , Ammonium tetrafluoroborate such as N, N-tetramethylenepyrrolidinium tetrafluoroborate, 1-ethyl-3-methylimidazolium tetrafluoroborate, tetraethylammonium perchlorate, tetramethylammonium perchlorate, tetrapropyl Ammonium perchlorate, tetrabutylammonium perchlorate, trimethylethyl perchlorate, triethylmethylammonium perchlorate, diethyldimethylammonium perchlorate, N-ethyl-N-methylpyrrolidinium perchlorate, N, N-tetramethylenepyrrolidinium park Lorate, ammonium perchlorates such as 1-ethyl-3-methylimidazolium perchlorate, tetraethylammonium hexaf Like phosphonium salts like lophosphate, tetramethylammonium hexafluorophosphate, tetrapropylammonium hexafluorophosphate, tetrabutylammonium hexafluorophosphate, trimethylethylhexafluorophosphate, triethylmethylammonium hexafluorophosphate, diethyldimethylammonium hexafluorophosphate Organic electrolytes such as ammonium hexafluorophosphates, lithium hexafluorophosphate, and lithium tetrafluoroborate.

These organic electrolyte solvents include, for example, aprotic organic solvents such as chain carbonates such as dimethyl carbonate and diethyl carbonate, cyclic carbonates such as ethylene carbonate and propylene carbonate, acetonitrile and propionitrile. Nitriles, γ-butyrolactone, α-methyl-γ-butyrolactone, lactones such as β-methyl-γ-butyrolactone, γ-valerolactone, 3-methyl-γ-valerolactone, dimethyl sulfoxide, diethyl sulfoxide Sulfoxides such as dimethylformamide, amides such as diethylformamide, cyclic ethers such as tetrahydrofuran, dimethoxyethane and dioxolane, dimethylsulfolane, sulfolane, and one or two It can also be used as a mixed solvent described above.

The solid electrolyte is, for example, a polymer solid electrolyte in which a polyethylene oxide polymer and an alkali metal salt are combined, a polymer solid electrolyte in which an electrolyte solution composed of a metal salt and an aprotic solvent is impregnated in a crosslinked network of polyethylene oxide, Ion-conducting polymer solid electrolyte, or lithium phosphate (Li _x PO _y ), lithium iron phosphate, using a composite comprising a polymer obtained from a (meth) acrylate prepolymer containing an oxyalkylene group and an electrolyte _{(Li x Fe y (PO 4} ) z), lithium manganese phosphate _{(Li x Mn y (PO 4} ) z), nickel phosphate lithium _{(Li x Ni y (PO 4} ) z), chromic lithium phosphate (Li _{x Cr y (PO 4) z} ) lithium oxide or phosphate, such as, and phosphorus sulfide lithium ( i x _{PS y)} can be used as the inorganic solid electrolyte such as phosphorus sulfide compounds, such as.

A known material can be used for the electrode, for example, a metal such as aluminum, gold, platinum, copper, iron, chromium, zinc, tungsten, molybdenum, titanium, tantalum, nickel, or an alloy thereof, a compound of metal and silicon. Various silicides, carbon, carbon nanotubes, graphene, low-resistance silicon, conductive polymer (conductive polymers are, for example, polyaniline, polyacetylene and derivatives thereof, polyparaphenylene and derivatives thereof, polypyrrole and derivatives thereof, polythienylene and derivatives thereof , Polypyridinediyl and derivatives thereof, polyisothianaphthenylene and derivatives thereof, polyfurylene and derivatives thereof, polyselenophene and derivatives thereof, polyparaphenylene vinylene, polythienylene vinylene, polyfurylene vinylene, polynaphthenile Vinylene, polyselenophene vinylene, polyarylene vinylene and derivatives thereof, such as poly pyridinediyl vinylene) can be used.

FIG. 44 shows an example of a plan view of the structure of the electric double layer capacitor. A large number of parallel plate capacitors may be connected by forming contact holes in an insulating substrate (thin plate). As shown in FIG. 44, the counter electrodes 2042 and 2043 constituting the capacitor may be formed in a spiral shape in parallel. There are only two contacts, A and B. Between the spiral-shaped counter electrodes 2042 and 2043, there are electrolytes such as an electrolytic solution, a gel electrolyte, and a solid electrolyte, and these constitute an electric double layer capacitor. Because of the spiral shape, a very high density capacitor can be produced. The spiral shape can also be made into a rectangular shape as shown in FIG. 44, a circular shape, an elliptical shape, various curved shapes, or a polygonal shape of an appropriate triangle or more according to the chip 2041. Unlike conventional electric double layer capacitors, there is no need to fabricate electrode layers and electrolytes, and the distance between the electrodes (positive and negative electrodes) is almost constant, so there is no risk of short circuiting and high reliability. A double layer capacitor is fabricated. Therefore, it is not necessary to arrange a separator, so that ions can be moved smoothly. In the case of a solid electrolyte as well as an electrolytic solution and a gel electrolyte, the electrolyte covers the electrode without any gap, so that an electric double layer is efficiently formed around the electrode. As described above, by using the present invention, an ultra-small electric double layer capacitor can be manufactured by a very simple process. Furthermore, the present invention can be used for a secondary battery with the same structure as such an electric double layer capacitor.

FIG. 45 is a diagram showing a generator using electric charges generated by vibration of a substrate side wall formed between a through hole or a recess formed in a piezoelectric substrate. Through holes or recesses 2115 (2115-1, 2, 3) are formed in the piezoelectric substrate 2111. Substrate sidewalls 2111 (2111-2, 3) are formed between the through holes or recesses 2115 (2115-1, 2, 3), and further, a conductor film / film is formed on the side surface of the substrate sidewall 2111 (21111-2, 3). Electrodes 2116 (2116-1, 2, 3, 4) are formed. Thin plates (insulator substrates) 2112 and 2113 are attached to the first surface (front surface, upper surface) and the second surface (back surface and lower surface) of the substrate 2111, and the upper and lower surfaces of the substrate side wall 2111 (2111-2 and 3) are these. Are regulated by thin plates (insulator substrates) 2112 and 2113. The thin plate (insulator substrate) 2112 and 2113 covering the through-holes or the recesses 2115 (2115-1, 2, 3) has openings 2114 (2114-1) for introducing and deriving vibration waves and the like as necessary. 2, 3) and an opening 2118 are formed. In the case of the concave portion, the thin plate 2113 is attached to the opening side, but the thin plate 2112 is not necessarily attached because there is a substrate on the opposite side. When the vibration wave Wa enters the through-hole or the recess 2115 (2115-1, 2, 3), the piezoelectric substrate side wall 2111 (21111-2, 3) vibrates, and deformation due to this vibration causes the piezoelectric substrate side wall 2111 (2111- Charge is polarized on both sides (both sides) of (2, 3). This electric charge is taken out by the conductor film / electrodes 2116 (2116-1, 2, 3, 4) formed on both surfaces (both sides) of the piezoelectric substrate side wall 2111 (2111-2, 3) (terminals A, B), Electric power can be generated by storing in a capacitor or the like. Even when the substrate 2111 is a substrate that is not a piezoelectric substrate, for example, a semiconductor substrate such as silicon, an insulating film, a first conductor film / electrode, a piezoelectric film, and a second conductor film / electrode are formed on the substrate side wall. By laminating and patterning in this order (if necessary), the piezoelectric film polarizes charges on both surfaces (both sides) by vibration, so that the charges are converted into the first conductor film / electrode and the second conductor film.・ Take out with electrodes. As a result, power can be generated by storing in a capacitor or the like. Since the piezoelectric substrate and the substrate vibrate not only due to vibration but also due to acceleration, angular velocity, wind and pressure change, it is possible to generate electric power. In the case of acceleration or angular velocity, as described above, for example, by putting a heavy liquid into the recess 2115-2, the power generation efficiency can be increased. When using a semiconductor substrate, an IC with a generator can be manufactured, so there is a merit that electricity supply is not required from the outside. Furthermore, the power generation status can be monitored by the IC, and more efficient power generation can be performed. Is possible.

The piezoelectric substrate is, for example, PZT (lead zirconate titanate), barium titanate, lead titanate, potassium niobate, lithium niobate, lithium tantalate, sodium tungstate, zinc oxide, lithium tetraborate, calcium titanate. , Piezoelectric polymers such as aluminum phosphate, quartz, potassium sodium tartrate, polyvinylidene fluoride (PVDF), aluminum nitride, gallium phosphate, gallium arsenide, and the like. The piezoelectric film is a film in which the above material is formed by a PVD method or a CVD method. The recesses and through holes of the piezoelectric substrate and other substrates can be formed by using a photolithographic method + etching method or an imprint method. For example, a mold pattern for forming recesses or through-holes is pressed against a liquid or gel-like substance containing liquid or gel-like piezoelectric polymer or fine particles of the above-mentioned piezoelectric material and then solidified, and then the mold is released or extinguished. As a result, a recess or a through hole pattern is formed in the piezoelectric substrate. Thereafter, a conductive film is stacked and necessary patterning is performed, and then an insulating film as a protective film is stacked if necessary, and a thin plate (insulator substrate) is attached.

FIG. 46 is a view showing a micro power generator manufactured by forming recesses in a piezoelectric polymer filled in the recesses formed in the substrate and using the side walls of the piezoelectric polymer substrate between the recesses. A recess 2132 is formed in the substrate 2131. The substrate is a semiconductor substrate such as silicon, an insulator substrate such as a glass substrate, or a conductor substrate such as a metal substrate such as a low resistance silicon substrate or an aluminum substrate. The recess 2132 is filled with a piezoelectric polymer 2133 or the like. This filling can be formed by applying a piezoelectric polymer, screen printing, dipping, spraying, or the like. Next, concave portions 2134 (2134-1, 2, 3) perpendicular to the substrate surface (substantially perpendicular) are formed by photolithography method + etching method or imprint method. The polymer substrate side wall 2135 (2135-1, 2, 3, 4) is formed by the recess 2134 (2134-1, 2, 3). Next, a conductive film is laminated and necessary patterning is performed to form a conductive film / electrode 2136 (2136-1, 2, 3, 4) on the side surface of the polymer substrate side wall 2135 (2135-2, 3). The conductor film / wiring is drawn out from these conductor films / electrodes 2136 (2136-1, 2, 3, 4) with the same wiring pattern. Next, a thin plate 2137 is attached to the upper surface of the polymer substrate 2133 (terminals are indicated by A and B). In addition, a protective film (insulating film) may be laminated between them to protect the conductor film / electrode 2136. Since the thin plate (insulator substrate) 2137 is also attached to the upper surface of the polymer substrate sidewall 2135 (2135-2, 3), the upper surface of the polymer substrate sidewall 2135 (2135-2, 3) is thin plate (insulator substrate) 2137. Thus, the lower side of the polymer substrate side wall 2135 (2135-2, 3) is regulated by the polymer substrate 2133 (the substrate 2131 when the polymer 2133 at the bottom of the recess 2134 is completely removed). In the thin plate 2137 covering the concave portion 2134 (2134-1, 2, 3), an opening 2138 may be provided for the purpose of introducing and deriving a vibration wave. The piezoelectric polymer substrate side wall 2136 (2136-2, 3) vibrates due to vibration, acceleration, each speed, pressure fluctuation, and the like, and the piezoelectric polymer substrate side wall 2136 (2136-2, 3) deforms to cause the piezoelectric body. Since charges are polarized on both side surfaces of the polymer substrate side wall 2136 (2136-2, 3), the charges are taken out by the conductive film / electrode 2136 (2136-1, 2, 3, 4) (guided to the terminals A and B). ), It can generate electricity by storing electric charge in a capacitor. Although the material filled in the recess has been described as a piezoelectric polymer, the recess may be filled in a liquid or gel form in which a piezoelectric material is made into fine particles and a binder and a solvent are mixed. In the case of the imprint method, a recess can be formed by inserting a mold therein.

Even if the polymer 2133 is not a piezoelectric polymer, the first conductor film / electrode, piezoelectric film is formed on the substrate side wall 2136 (insulating film if necessary) after forming the recess 2134 and the substrate side wall 2136 as described above. By stacking the second conductor film / electrode in this order and patterning (if necessary), the piezoelectric film polarizes charges on both sides (both sides) by vibration, so that the charges are transferred to the first conductive film. The body film / electrode and the second conductor film / electrode are taken out. As a result, power can be generated by storing in a capacitor or the like. 45 and 46, even when the substrate or polymer is a piezoelectric material, as described above, a piezoelectric film or the like is further stacked to extract charges from both to improve efficiency. You can also.

Next, a method for simply forming the concave pattern of the present invention using an imprint method on a polymer will be described. A mold for forming recesses is inserted into a liquid or gel polymer, and heat treatment is performed to solidify the polymer. The mold material is etched and the mold is etched away using a solution or etching gas that does not etch the polymer. The remaining part becomes a recess. Thereafter, necessary thin film formation and thin plate adhesion are performed. For example, if the polymer is polytetrafluoroethylene, the mold material is glass, and a hydrofluoric acid solution is used, only the mold material can be etched. In addition, if a conductive film is attached to the mold pattern, or a conductive film wiring pattern is attached and the conductive film is not etched, a solution or etching gas for etching the mold is used, so that the inside of the recess is automatically A conductor film or wiring pattern can be attached to the substrate. For example, the conductor film may be a gold film. Here, instead of the polymer, a liquid material or a gel material in which a particulate piezoelectric material is mixed with a binder and / or a solvent may be used.

For example, the thickness of the substrate 2131 is about 0.1 mm to 2 mm, the depth of the recess 2132 is about 0.01 mm to 1.5 mm, the depth of the in-polymer recess 2134 is about 0.005 mm to 1.4 mm, and the thickness of the thin plate is Since it is about 0.05 mm to 2 mm, a very small generator (device) can be produced. Further, if the substrate 2131 is a semiconductor substrate such as silicon, it can be mounted on a chip together with an IC and a transistor, and the IC and the transistor can be moved without supplying electricity, so that a very small mounting component can be manufactured. For example, when applied to a cardiac pacemaker, the pacemaker can be moved while generating power by vibrations of the heart, blood, and other organs, so that a patient can be realized without burden. In the present invention, a vibration wave can also be created (with the reverse operation of the microphone), so that the functions as a pacemaker can be integrated into one chip, and an extremely small (for example, 1 mm or less) pacemaker can be realized. It becomes possible. As described above, the present invention can produce a micro-generator using a simple structure, process and material.

In the description of the embodiment of the present invention, it is needless to say that what has been described in other parts can be applied as long as they are not contradictory because they have not been described.

  The present invention relates to semiconductor pressure sensors, micro pressure sensors, acceleration sensors, acoustic transducers such as microphones, speakers, and earphones, various sensors and devices such as ink jet devices and pump devices, secondary batteries, fuel cells, electric batteries. It can be used for downsizing of battery devices such as multilayers, micro-generators, and sensors and devices thereof.

111 ... Semiconductor substrate, 112 ... Recess (through hole), 113 ... Insulating film,
115: conductive film, 119: thin plate

Claims (129)

A conductor substrate having at least two grooves (through grooves or through holes) penetrating the upper surface and the lower surface, an insulator substrate (first surface insulator substrate) attached to the upper surface (first surface) of the conductor substrate, and A capacitive microphone comprising an insulator substrate (second surface insulator substrate) attached to a lower surface (second surface) of the conductor substrate,
The conductive substrate that separates two adjacent through grooves (first through groove and second through groove) in the lateral direction (substantially perpendicular to the thickness direction of the conductive substrate) is one electrode (first substrate side wall capacitance). Electrode),
The first substrate side wall capacitor electrode is opposed to one of the adjacent through grooves (first through groove), and the other side wall of the conductive substrate that is not electrically connected to the first substrate side wall capacitor electrode is the other side. A counter electrode (second substrate side wall capacitor electrode), and a first through groove (space) between the first substrate side wall capacitor electrode and the second substrate side wall capacitor electrode as a capacitance space,
The first substrate side wall capacitive electrode detects the sound wave using a change in capacitance of the first through groove space when the first substrate side wall capacitive electrode is oscillated and displaced by the sound wave. The upper surface of the capacitor is attached to the first surface insulator substrate and / or the lower surface thereof is attached to the second surface insulator substrate; and / or the second substrate side wall capacitor electrode has the upper surface of the first surface insulator. A capacitance type microphone characterized by being attached to a body substrate and / or having a lower surface attached to a second surface insulator substrate. The thickness of the conductor substrate is 2.0 mm or less, preferably 1.0 mm or less, and the thickness of the first surface insulator substrate is 1.0 mm or less, preferably 0.5 mm or less. The capacitive microphone according to claim 1, wherein the thickness of the two-sided insulating substrate is 1.0 mm or less. Electrically connecting the electrode / wiring formed on the first surface insulator substrate and the first substrate side wall through a contact hole formed in the first surface insulator substrate attached to the upper surface of the first substrate side wall;
The electrode / wiring formed on the first surface insulator substrate is electrically connected to the second substrate side wall through a contact hole formed in the first surface insulator substrate attached to the upper surface of the second substrate side wall. The capacitive microphone according to claim 1 or 2. It has a through groove (second through groove) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is an n-square shape, where n is an integer of 3 or more and corresponds to each side surface. 4. A plurality of second substrate side walls, wherein the plurality of second substrate side walls are not electrically connected to each other, and a sound wave is introduced into the second through groove. The electrostatic capacity type microphone according to claim 1. There is a through groove (second through groove) surrounded by the first substrate side wall, and at least a part of the outer cross-sectional shape of the first substrate side wall is a curved shape, and the inner cross-sectional shape of the second substrate side wall is the first cross section. The electrostatic capacity type microphone according to any one of claims 1 to 3, which has a shape similar to an outer cross-sectional shape of the substrate side wall. The first substrate side wall has a through groove (second through groove) surrounded by the first substrate side wall, the outer cross-sectional shape of the first substrate side wall is circular or elliptical, and the inner cross-sectional shape of the second substrate side wall is the first substrate The capacitive microphone according to any one of claims 1 to 3, wherein the capacitance microphone has a shape similar to an outer cross-sectional shape of the side wall. A third substrate side wall surrounding the first substrate side wall and the second substrate side wall; an upper surface of the third substrate side wall is attached to the first surface insulator substrate; and a lower surface of the third substrate side wall is attached to the second surface insulator substrate The third substrate side wall is not electrically connected to one or both of the first substrate side wall and the second substrate side wall, and the third substrate side wall is the outer side surface of the chip package of the capacitive microphone device. The first surface insulator substrate is the upper surface or the lower surface of the chip package of the capacitive microphone device, and the second surface insulator substrate is the lower surface or the upper surface of the chip package of the capacitive microphone device. The electrostatic capacity type microphone according to claim 1, wherein the electrostatic capacity type microphone is used. A main substrate having at least two grooves (through grooves or through holes) penetrating the upper surface and the lower surface, a thin substrate (first surface thin plate) attached to the upper surface (first surface) of the main substrate, and a lower surface of the main substrate A capacitive microphone comprising a thin substrate (second surface thin plate) attached to (second surface),
On the main substrate side wall (first substrate side wall) (side surface) that separates two adjacent through grooves (first through groove and second through groove) in the lateral direction (substantially perpendicular to the thickness direction of the main substrate) The conductive film formed on the electrode is one electrode (first substrate side wall capacitor electrode),
A main substrate side wall (second substrate) that faces the first substrate side wall capacitor electrode across one of the adjacent through grooves (first through groove) and is not electrically connected to the first substrate side wall capacitor electrode. The conductive film formed on the side surface of the side wall is used as the other counter electrode (second substrate side wall capacitor electrode), and a first through groove space between the first substrate side wall capacitor electrode and the second substrate side wall capacitor electrode is formed. Capacitance space,
The first substrate side wall capacitive electrode detects a sound wave using a change in capacitance of the first through groove space when the first electrode side wall capacitor electrode is oscillated and displaced by the sound wave. The upper surface is attached to the first surface thin plate, the lower surface is attached to the second surface thin plate, and / or the second substrate side wall is attached to the first surface thin plate, and the lower surface is attached to the second surface thin plate. Adhering,
Capacitance type microphone characterized by 9. The capacitive microphone according to claim 8, wherein the main substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof. The capacitive microphone according to claim 8 or 9, wherein the first surface thin plate is an insulator substrate and / or the second surface thin plate is an insulator substrate. The thickness of the main substrate is 2.0 mm or less, preferably 1.0 mm or less, and the thickness of the first surface first surface thin plate is 1.0 mm or less, preferably 0.5 mm or less. The capacitive microphone according to any one of claims 8 to 10, wherein the thickness of the two-surface thin plate is 1.0 mm or less. Electrically connecting the electrode / wiring formed on the first surface insulator substrate and the first substrate side wall through a contact hole formed in the first surface insulator substrate attached to the upper surface of the first substrate side wall;
The electrode / wiring formed on the first surface insulator substrate is electrically connected to the second substrate side wall through a contact hole formed in the first surface insulator substrate attached to the upper surface of the second substrate side wall. The capacitance type microphone according to any one of claims 8 to 11. It has a through groove (second through groove) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is an n-square shape, where n is an integer of 3 or more and corresponds to each side surface. 13. A plurality of second substrate side walls, wherein the plurality of second substrate side walls are not electrically connected to each other, and a sound wave is introduced into the second through groove. The electrostatic capacity type microphone according to claim 1. There is a through groove (second through groove) surrounded by the first substrate side wall, and at least a part of the outer cross-sectional shape of the first substrate side wall is a curved shape, and the inner cross-sectional shape of the second substrate side wall is the first cross section. The capacitance type microphone according to any one of claims 8 to 12, which has a shape similar to an outer cross-sectional shape of a substrate side wall. The first substrate side wall has a through groove (second through groove) surrounded by the first substrate side wall, the outer cross-sectional shape of the first substrate side wall is circular or elliptical, and the inner cross-sectional shape of the second substrate side wall is the first substrate The capacitance type microphone according to any one of claims 8 to 12, which has a shape similar to an outer cross-sectional shape of the side wall. A third substrate side wall surrounding the first substrate side wall and the second substrate side wall; an upper surface of the third substrate side wall is attached to the first surface insulator substrate; and a lower surface of the third substrate side wall is attached to the second surface insulator substrate The third substrate side wall is not electrically connected to one or both of the first substrate side wall and the second substrate side wall, and the third substrate side wall is the outer side surface of the chip package of the capacitive microphone device. The first surface insulator substrate is the upper surface or the lower surface of the chip package of the capacitive microphone device, and the second surface insulator substrate is the lower surface or the upper surface of the chip package of the capacitive microphone device. The electrostatic capacity type microphone according to any one of claims 8 to 15. Has at least two adjacent recesses (first recess and second recess) that open on the first surface (front surface or top surface) of the main substrate and do not open on the second surface (back surface or bottom surface) opposite to the first surface. And a capacitive microphone having a thin plate substrate attached to the upper surface (first surface) of the main substrate,
A conductive film formed on the side wall of the main substrate (side surface of the first substrate) that separates two adjacent concave portions in the horizontal direction (substantially perpendicular to the thickness direction of the main substrate) is formed on one electrode (first side). 1 substrate side wall capacitive electrode)
A main substrate side wall (second substrate side wall) that faces the first substrate side wall capacitor electrode across one of the adjacent recesses (first recess) and is not electrically connected to the first substrate side wall capacitor electrode. The conductive film formed on the side surface of the first electrode is used as the other counter electrode (second substrate side wall capacitor electrode), and the first recess space between the first substrate side wall capacitor electrode and the second substrate side wall capacitor electrode is electrostatic capacitance. Space,
The first substrate side wall capacitive electrode detects a sound wave using a change in capacitance of the first recess space due to vibration and displacement caused by the sound wave,
Further, the upper surface of the first substrate side wall is attached to the thin plate substrate, and / or the upper surface of the second substrate side wall is attached to the thin plate substrate,
Capacitance type microphone characterized by 18. The capacitive microphone according to claim 17, wherein the main substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof. The capacitive microphone according to claim 17 or 18, wherein the thin plate substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof. The thickness of the main substrate is 2.0 mm or less, preferably 1.0 mm or less, and the thickness of the first surface first surface thin plate is 1.0 mm or less, preferably 0.5 mm or less. The capacitive microphone according to any one of claims 17 to 19, wherein the thickness of the two-surface thin plate is 1.0 mm or less. Electrically connecting the electrode / wiring formed on the first surface insulator substrate and the first substrate side wall through a contact hole formed in the first surface insulator substrate attached to the upper surface of the first substrate side wall;
The electrode / wiring formed on the first surface insulator substrate is electrically connected to the second substrate side wall through a contact hole formed in the first surface insulator substrate attached to the upper surface of the second substrate side wall. The capacitance type microphone according to any one of claims 17 to 20. It has a through groove (second through groove) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is an n-square shape, where n is an integer of 3 or more and corresponds to each side surface. The plurality of second substrate sidewalls, wherein the plurality of second substrate sidewalls are not electrically connected to each other, and a sound wave is introduced into the second through groove. The electrostatic capacity type microphone according to claim 1. There is a through groove (second through groove) surrounded by the first substrate side wall, and at least a part of the outer cross-sectional shape of the first substrate side wall is a curved shape, and the inner cross-sectional shape of the second substrate side wall is the first cross section. The capacitive microphone according to any one of claims 17 to 21, wherein the capacitance microphone has a shape similar to an outer cross-sectional shape of the substrate side wall. The first substrate side wall has a through groove (second through groove) surrounded by the first substrate side wall, the outer cross-sectional shape of the first substrate side wall is circular or elliptical, and the inner cross-sectional shape of the second substrate side wall is the first substrate The capacitive microphone according to any one of claims 17 to 21, wherein the capacitance microphone has a shape similar to an outer cross-sectional shape of the side wall. A third substrate side wall surrounding the first substrate side wall and the second substrate side wall; an upper surface of the third substrate side wall is attached to the first surface insulator substrate; and a lower surface of the third substrate side wall is attached to the second surface insulator substrate The third substrate side wall is not electrically connected to one or both of the first substrate side wall and the second substrate side wall, and the third substrate side wall is the outer side surface of the chip package of the capacitive microphone device. The first surface insulator substrate is the upper surface or the lower surface of the chip package of the capacitive microphone device, and the second surface insulator substrate is the lower surface or the upper surface of the chip package of the capacitive microphone device. The electrostatic capacity type microphone according to any one of claims 17 to 24 characterized by things. A capacitive microphone having at least two adjacent recesses (first recess and second recess) opened on the upper surface of an insulating polymer formed on the main substrate and having a thin plate substrate attached to the upper surface of the main substrate Because
A conductor film formed on the substrate side wall (side surface of the first substrate) of the insulating polymer that separates two adjacent concave portions in the lateral direction (substantially perpendicular to the thickness direction of the insulating polymer) Electrode (first substrate side wall capacitor electrode),
An insulating polymer substrate sidewall (second) that faces the first substrate sidewall capacitor electrode across one of the adjacent recesses (first recess) and is not electrically connected to the first substrate sidewall capacitor electrode. The conductive film formed on the side surface of the substrate side wall is used as the other counter electrode (second substrate side wall capacitor electrode), and the first recess space between the first substrate side wall capacitor electrode and the second substrate side wall capacitor electrode is defined as Capacitance space,
The first substrate side wall capacitive electrode detects a sound wave using a change in capacitance of the first recess space due to vibration and displacement caused by the sound wave,
Further, the upper surface of the first substrate side wall is attached to the thin plate substrate, and / or the upper surface of the second substrate side wall is attached to the thin plate substrate,
Capacitance type microphone characterized by 27. The capacitive microphone according to claim 26, wherein the main substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof. 28. The capacitive microphone according to claim 26 or 27, wherein the thin plate substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof. The thickness of the main substrate is 2.0 mm or less, preferably 1.0 mm or less, and the thickness of the thin plate substrate is 1.0 mm or less, preferably 0.5 mm or less. The capacitive microphone according to any one of 26 to 28. 30. The capacitive microphone according to claim 26, wherein the thickness of the insulating polymer is 1.0 mm or less, preferably 0.5 mm or less. The electrode / wiring formed on the thin plate substrate and the first upper surface conductor film wiring formed on the upper surface of the first substrate side wall are connected through contact holes formed in the thin plate substrate attached to the upper surface of the first substrate side wall, and 1 upper surface conductor film wiring is electrically connected to the first substrate side wall capacitor electrode;
The electrode / wiring formed on the thin plate substrate and the second upper surface conductor film wiring formed on the upper surface of the second substrate side wall are connected through contact holes formed on the thin plate substrate attached to the upper surface of the second substrate side wall, and The capacitive microphone according to any one of claims 26 to 30, wherein the two upper surface conductor film wirings are electrically connected to the second substrate side wall capacitor electrode. The first substrate side wall has a concave portion (second concave portion) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is an n-gonal shape, where n is an integer of 3 or more and a plurality of numbers corresponding to each side surface. 32. The second substrate side wall according to claim 26, wherein the plurality of second substrate side walls are not electrically connected to each other, and a sound wave is introduced into the second recess. The capacitive microphone described in 1. The first substrate side wall has a recess (second recess) surrounded by the first substrate side wall, and at least one part of the outer cross-sectional shape of the first substrate side wall is a curved shape, and the inner cross-sectional shape of the second substrate side wall is the first substrate side wall The capacitive microphone according to any one of claims 26 to 31, wherein the capacitive microphone has a shape similar to an outer cross-sectional shape of the first sound wave and introduces a sound wave into the second recess. 32. The method according to claim 26, further comprising a through groove (second through groove) surrounded by the first substrate side wall, wherein an outer cross-sectional shape of the first substrate side wall is a circular shape or an elliptical shape. The capacitive microphone according to the item. A third substrate side wall surrounding the first substrate side wall and the second substrate side wall; an upper surface of the third substrate side wall is attached to the thin substrate; and the third substrate side wall is one of the first substrate side wall and the second substrate side wall. Alternatively, the third substrate side wall is the outer side surface of the chip package of the capacitive microphone device, and the thin board is the upper surface or the lower surface of the chip package of the capacitive microphone device. 35. The capacitive microphone according to any one of claims 26 to 34, wherein: 36. The electrostatic capacitance type according to claim 26, wherein the main substrate is a semiconductor substrate, and an insulating polymer is formed in a recess (main recess) formed in the main substrate. Microphone. 37. The capacitive microphone according to claim 26, wherein the recess is formed by an imprint method. A capacitive microphone having at least two adjacent recesses (first recess and second recess) opened on an upper surface of a conductive polymer formed on a main substrate and having a thin plate substrate attached to the upper surface of the main substrate Because
A conductive polymer substrate side wall (first substrate side wall) (side surface thereof) separating two adjacent concave portions in the lateral direction (a direction substantially perpendicular to the thickness direction of the conductive polymer) is one electrode (first substrate side wall). Capacitive electrode)
A substrate side wall (second layer) of a conductive polymer that faces the first substrate side wall capacitor electrode across one of the adjacent recesses (first recess) and is not electrically conductive with the first substrate side wall capacitor electrode. (Side wall of the substrate) is used as the other counter electrode (second substrate side wall capacitor electrode), and the first recess space between the first substrate side wall capacitor electrode and the second substrate side wall capacitor electrode is used as the capacitance space. ,
The first substrate side wall capacitive electrode detects a sound wave using a change in capacitance of the first recess space due to vibration and displacement caused by the sound wave,
Further, the upper surface of the first substrate side wall is attached to the thin plate substrate, and / or the upper surface of the second substrate side wall is attached to the thin plate substrate,
Capacitance type microphone characterized by The capacitive microphone according to claim 38, wherein the main substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof. 40. The capacitive microphone according to claim 38 or 39, wherein the thin plate substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof. The thickness of the main substrate is 2.0 mm or less, preferably 1.0 mm or less, and the thickness of the thin plate substrate is 1.0 mm or less, preferably 0.5 mm or less. The capacitive microphone according to any one of 38 to 40. The capacitive microphone according to any one of claims 38 to 41, wherein the thickness of the conductive polymer is 1.0 mm or less, preferably 0.5 mm or less. The electrode / wiring formed on the thin plate substrate is connected to the upper surface of the first substrate side wall through the contact hole formed on the thin plate substrate attached to the upper surface of the first substrate side wall,
The electrode / wiring formed on the thin plate substrate is connected to the upper surface of the second substrate side wall through a contact hole formed in the thin plate substrate attached to the upper surface of the second substrate side wall. The electrostatic capacity type microphone according to claim 1. The first substrate side wall has a concave portion (second concave portion) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is an n-gonal shape, where n is an integer of 3 or more and a plurality of numbers corresponding to each side surface. 44. The second substrate side wall according to claim 38, wherein the plurality of second substrate side walls are not electrically connected to each other and a sound wave is introduced into the second recess. The capacitive microphone described in 1. The first substrate side wall has a recess (second recess) surrounded by the first substrate side wall, and at least one part of the outer cross-sectional shape of the first substrate side wall is a curved shape, and the inner cross-sectional shape of the second substrate side wall is the first substrate side wall 44. The electrostatic capacity type microphone according to claim 38, which has a shape similar to an outer cross-sectional shape of the first sound wave and introduces a sound wave into the second recess. 44. The method according to claim 38, further comprising a through groove (second through groove) surrounded by the first substrate side wall, wherein an outer cross-sectional shape of the first substrate side wall is a circular shape or an elliptical shape. The capacitive microphone according to the item. A third substrate side wall surrounding the first substrate side wall and the second substrate side wall; an upper surface of the third substrate side wall is attached to the thin substrate; and the third substrate side wall is one of the first substrate side wall and the second substrate side wall. Alternatively, the third substrate side wall is the outer side surface of the chip package of the capacitive microphone device, and the thin board is the upper surface or the lower surface of the chip package of the capacitive microphone device. 47. The capacitive microphone according to any one of claims 38 to 46, wherein: The capacitive substrate according to any one of claims 38 to 47, wherein the main substrate is a semiconductor substrate, and an insulating polymer is formed in a concave portion (main concave portion) formed in the main substrate. Microphone. 49. The capacitive microphone according to claim 38, wherein the recess is formed by an imprint method.
In the bonded substrate in which the conductor substrate and the low concentration substrate are bonded, the bonded substrate has at least two adjacent recesses (first recess and second recess) opened on the surface on the conductor substrate side,
The recess is formed in a direction substantially perpendicular to the surface of the bonding substrate (± 10 degrees or less, preferably ± 5 degrees or less, optimally ± 1 degree or less with respect to the direction perpendicular to the surface),
The bottom of the recess exists on the low concentration substrate side beyond the junction of the conductor substrate and the low concentration substrate,
A capacitive microphone having a thin plate attached to the upper surface of the bonding substrate,
A bonding substrate side wall (first substrate side wall) (side surface thereof) separating two adjacent concave portions in the lateral direction (substantially perpendicular to the thickness direction of the bonding substrate) is defined as one electrode (first substrate side wall capacitor electrode). ,
A junction substrate side wall (second substrate side wall) that faces the first substrate side wall capacitor electrode across one of the adjacent recesses (first recess) and is not electrically connected to the first substrate side wall capacitor electrode. (Side surface) is the other counter electrode (second substrate sidewall capacitor electrode), and the first recess space between the first substrate sidewall capacitor electrode and the second substrate sidewall capacitor electrode is the capacitance space,
The first substrate side wall capacitive electrode detects a sound wave using a change in capacitance of the first recess space due to vibration and displacement caused by the sound wave,
Further, the upper surface of the first substrate side wall is attached to the thin plate substrate, and / or the upper surface of the second substrate side wall is attached to the thin plate substrate,
Capacitance type microphone characterized by The conductor substrate is a high-concentration silicon semiconductor substrate (impurity concentration of 10 ¹⁹ / cm ³ or more), and the low-concentration semiconductor substrate is a low-concentration silicon semiconductor substrate (impurity concentration of 10 ¹⁷ / cm ³ or less). 51. The capacitive microphone according to claim 50, wherein the conductive type of the concentration silicon semiconductor substrate and the conductive type of the low concentration silicon semiconductor substrate are opposite. 52. The capacitive microphone according to claim 51, wherein the bonding substrate is an epitaxial substrate, and the low-concentration silicon semiconductor substrate is an epitaxial layer formed by epitaxial growth on the high-concentration silicon semiconductor substrate. In the bonded substrate in which the bonded conductive substrate and the low concentration substrate are bonded, an insulating film is interposed between the conductive substrate and the low concentration substrate, and the bonded substrate is open at least on the surface on the conductive substrate side. Two adjacent recesses (first recess and second recess),
The recess is formed in a direction substantially perpendicular to the surface of the bonding substrate (± 10 degrees or less, preferably ± 5 degrees or less, optimally ± 1 degree or less with respect to the direction perpendicular to the surface),
The bottom of the recess exists on the insulator film or low concentration substrate side beyond the conductor substrate,
A capacitive microphone having a thin plate attached to the upper surface of the bonding substrate,
A bonding substrate side wall (first substrate side wall) that separates two adjacent concave portions in the lateral direction (substantially perpendicular to the thickness direction of the bonding substrate) is defined as one electrode (first substrate side wall capacitor electrode). ,
A junction substrate side wall (second substrate side wall) that faces the first substrate side wall capacitor electrode across one of the adjacent recesses (first recess) and is not electrically connected to the first substrate side wall capacitor electrode. (Side surface) is the other counter electrode (second substrate sidewall capacitor electrode), and the first recess space between the first substrate sidewall capacitor electrode and the second substrate sidewall capacitor electrode is the capacitance space,
The first substrate side wall capacitive electrode detects a sound wave using a change in capacitance of the first recess space due to vibration and displacement caused by the sound wave,
Further, the upper surface of the first substrate side wall is attached to the thin plate substrate, and / or the upper surface of the second substrate side wall is attached to the thin plate substrate,
Capacitance type microphone characterized by The thickness of the bonded substrate is 2.0 mm or less, preferably 1.0 mm or less, and the thickness of the thin plate substrate is 1.0 mm or less, preferably 0.5 mm or less. The capacitive microphone according to any one of 50 to 53. 55. The capacitive microphone according to any one of claims 50 to 54, wherein a thickness of the conductor substrate is 1.0 mm or less, preferably 0.5 mm or less. The electrode / wiring formed on the thin plate substrate is connected to the upper surface of the first substrate side wall through the contact hole formed on the thin plate substrate attached to the upper surface of the first substrate side wall,
The electrode / wiring formed on the thin plate substrate is connected to the upper surface of the second substrate side wall through a contact hole formed on the thin plate substrate attached to the upper surface of the second substrate side wall. The electrostatic capacity type microphone according to claim 1. The first substrate side wall has a concave portion (second concave portion) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is an n-gonal shape, where n is an integer of 3 or more and a plurality of numbers corresponding to each side surface. 57. The second substrate side wall according to claim 50, wherein the plurality of second substrate side walls are not electrically connected to each other, and a sound wave is introduced into the second recess. The capacitive microphone described in 1. The first substrate side wall has a recess (second recess) surrounded by the first substrate side wall, and at least one part of the outer cross-sectional shape of the first substrate side wall is a curved shape, and the inner cross-sectional shape of the second substrate side wall is the first substrate side wall 57. The capacitive microphone according to any one of claims 50 to 56, which has a shape similar to an outer cross-sectional shape of the first sound wave and introduces a sound wave into the second recess. 57. The method according to claim 50, further comprising a through groove (second recess) surrounded by the first substrate side wall, wherein an outer cross-sectional shape of the first substrate side wall is a circular shape or an elliptical shape. The capacitive microphone described in 1. A third substrate side wall surrounding the first substrate side wall and the second substrate side wall; an upper surface of the third substrate side wall is attached to the thin substrate; and the third substrate side wall is one of the first substrate side wall and the second substrate side wall. Alternatively, the third substrate side wall is the outer side surface of the chip package of the capacitive microphone device, and the thin board is the upper surface or the lower surface of the chip package of the capacitive microphone device. 60. The capacitive microphone according to any one of claims 50 to 59, wherein: A conductor substrate having at least two grooves (through grooves or through holes) penetrating the upper surface and the lower surface, an insulator substrate (first surface insulator substrate) attached to the upper surface (first surface) of the conductor substrate, and A capacitive sensor comprising an insulator substrate (second surface insulator substrate) attached to a lower surface (second surface) of the conductor substrate,
The conductive substrate that separates two adjacent through grooves (first through groove and second through groove) in the lateral direction (substantially perpendicular to the thickness direction of the conductive substrate) is one electrode (first substrate side wall capacitance). Electrode),
The first substrate side wall capacitor electrode is opposed to one of the adjacent through grooves (first through groove), and the other side wall of the conductive substrate that is not electrically connected to the first substrate side wall capacitor electrode is the other side. A counter electrode (second substrate side wall capacitor electrode), and a first through groove (space) between the first substrate side wall capacitor electrode and the second substrate side wall capacitor electrode as a capacitance space,
The first substrate side wall capacitive electrode vibrates and displaces by force (acceleration, angular velocity, pressure, etc.), and the capacitance (acceleration, angular velocity, or pressure) changes by changing the capacitance of the first through groove space. And the first substrate side wall capacitor electrode has an upper surface attached to the first surface insulator substrate and / or a lower surface attached to the second surface insulator substrate, And / or the second substrate side wall capacitor electrode has an upper surface attached to the first surface insulator substrate and / or a lower surface attached to the second surface insulator substrate. Mold force sensor. The thickness of the conductor substrate is 2.0 mm or less, preferably 1.0 mm or less, and the thickness of the first surface insulator substrate is 1.0 mm or less, preferably 0.5 mm or less. 62. A capacitive force sensor according to claim 61, wherein the thickness of the two-sided insulating substrate is 1.0 mm or less. Electrically connecting the electrode / wiring formed on the first surface insulator substrate and the first substrate side wall through a contact hole formed in the first surface insulator substrate attached to the upper surface of the first substrate side wall;
The electrode / wiring formed on the first surface insulator substrate is electrically connected to the second substrate side wall through a contact hole formed in the first surface insulator substrate attached to the upper surface of the second substrate side wall. The capacitive force sensor according to claim 61 or 62. It has a through groove (second through groove) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is an n-square shape, where n is an integer of 3 or more and corresponds to each side surface. A plurality of second substrate side walls, the plurality of second substrate side walls are not electrically connected to each other, and force (acceleration, angular velocity, pressure, or the like) is introduced into the second through groove. The capacitive force sensor according to any one of claims 61 to 63. There is a through groove (second through groove) surrounded by the first substrate side wall, and at least a part of the outer cross-sectional shape of the first substrate side wall is a curved shape, and the inner cross-sectional shape of the second substrate side wall is the first cross section. The capacitance type force sensor according to any one of claims 61 to 63, wherein the capacitance type force sensor has a shape similar to an outer cross-sectional shape of the substrate side wall. The first substrate side wall has a through groove (second through groove) surrounded by the first substrate side wall, the outer cross-sectional shape of the first substrate side wall is circular or elliptical, and the inner cross-sectional shape of the second substrate side wall is the first substrate The capacitive force sensor according to any one of claims 61 to 63, wherein the capacitance type force sensor has a shape similar to an outer cross-sectional shape of the side wall. A third substrate side wall surrounding the first substrate side wall and the second substrate side wall; an upper surface of the third substrate side wall is attached to the first surface insulator substrate; and a lower surface of the third substrate side wall is attached to the second surface insulator substrate The third substrate sidewall is not electrically connected to one or both of the first substrate sidewall and the second substrate sidewall, and the third substrate sidewall is outside the chip package of the capacitive force sensor device. The first surface insulator substrate becomes the upper surface or the lower surface of the chip package of the capacitive force sensor device, and the second surface insulator substrate becomes the lower surface or the upper surface of the chip package of the capacitance force sensor device. The capacitive force sensor according to any one of claims 61 to 66, wherein: A main substrate having at least two grooves (through grooves or through holes) penetrating the upper surface and the lower surface, a thin substrate (first surface thin plate) attached to the upper surface (first surface) of the main substrate, and a lower surface of the main substrate A capacitive force sensor comprising a thin plate substrate (second surface thin plate) attached to (second surface),
On the main substrate side wall (first substrate side wall) (side surface) that separates two adjacent through grooves (first through groove and second through groove) in the lateral direction (substantially perpendicular to the thickness direction of the main substrate) The conductive film formed on the electrode is one electrode (first substrate side wall capacitor electrode),
A main substrate side wall (second substrate) that faces the first substrate side wall capacitor electrode across one of the adjacent through grooves (first through groove) and is not electrically connected to the first substrate side wall capacitor electrode. The conductive film formed on the side surface of the side wall is used as the other counter electrode (second substrate side wall capacitor electrode), and a first through groove space between the first substrate side wall capacitor electrode and the second substrate side wall capacitor electrode is formed. Capacitance space,
The force (acceleration, angular velocity, or pressure) is determined by changing the capacitance of the first through-groove space as the first substrate side wall capacitive electrode is vibrated and displaced by force (acceleration, angular velocity, pressure, etc.). And the first substrate side wall has an upper surface attached to the first surface thin plate, a lower surface attached to the second surface thin plate, and / or the second substrate side wall, The upper surface is attached to the first surface thin plate, the lower surface is attached to the second surface thin plate,
Capacitance type force sensor characterized by. 69. The capacitive force sensor according to claim 68, wherein the main substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof. 70. The capacitive force sensor according to claim 68 or 69, wherein the first surface thin plate is an insulator substrate and / or the second surface thin plate is an insulator substrate. The thickness of the main substrate is 2.0 mm or less, preferably 1.0 mm or less, and the thickness of the first surface first surface thin plate is 1.0 mm or less, preferably 0.5 mm or less. The capacitance type force sensor according to any one of claims 68 to 70, wherein a thickness of the two-surface thin plate is 1.0 mm or less. Electrically connecting the electrode / wiring formed on the first surface insulator substrate and the first substrate side wall through a contact hole formed in the first surface insulator substrate attached to the upper surface of the first substrate side wall;
The electrode / wiring formed on the first surface insulator substrate is electrically connected to the second substrate side wall through a contact hole formed in the first surface insulator substrate attached to the upper surface of the second substrate side wall. The capacitive force sensor according to any one of claims 68 to 71. It has a through groove (second through groove) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is an n-square shape, where n is an integer of 3 or more and corresponds to each side surface. A plurality of second substrate side walls, the plurality of second substrate side walls are not electrically connected to each other, and force (acceleration, angular velocity, pressure, or the like) is introduced into the second through groove. The capacitive force sensor according to any one of claims 68 to 72. There is a through groove (second through groove) surrounded by the first substrate side wall, and at least a part of the outer cross-sectional shape of the first substrate side wall is a curved shape, and the inner cross-sectional shape of the second substrate side wall is the first cross section. The capacitance type force sensor according to any one of claims 68 to 72, wherein the capacitance type force sensor has a shape similar to an outer cross-sectional shape of a substrate side wall. The first substrate side wall has a through groove (second through groove) surrounded by the first substrate side wall, the outer cross-sectional shape of the first substrate side wall is circular or elliptical, and the inner cross-sectional shape of the second substrate side wall is the first substrate The capacitance type force sensor according to any one of claims 68 to 72, wherein the capacitance type force sensor has a shape similar to an outer cross-sectional shape of the side wall. A third substrate side wall surrounding the first substrate side wall and the second substrate side wall; an upper surface of the third substrate side wall is attached to the first surface insulator substrate; and a lower surface of the third substrate side wall is attached to the second surface insulator substrate The third substrate sidewall is not electrically connected to one or both of the first substrate sidewall and the second substrate sidewall, and the third substrate sidewall is outside the chip package of the capacitive force sensor device. The first surface insulator substrate becomes the upper surface or the lower surface of the chip package of the capacitive force sensor device, and the second surface insulator substrate becomes the lower surface or the upper surface of the chip package of the capacitance force sensor device. The capacitive force sensor according to any one of claims 68 to 75, wherein: Has at least two adjacent recesses (first recess and second recess) that open on the first surface (front surface or top surface) of the main substrate and do not open on the second surface (back surface or bottom surface) opposite to the first surface. A capacitive force sensor having a thin plate attached to the upper surface (first surface) of the main substrate,
A conductive film formed on the side wall of the main substrate (side surface of the first substrate) that separates two adjacent concave portions in the horizontal direction (substantially perpendicular to the thickness direction of the main substrate) is formed on one electrode (first side). 1 substrate side wall capacitive electrode)
A main substrate side wall (second substrate side wall) that faces the first substrate side wall capacitor electrode across one of the adjacent recesses (first recess) and is not electrically connected to the first substrate side wall capacitor electrode. The conductive film formed on the side surface of the first electrode is used as the other counter electrode (second substrate side wall capacitor electrode), and the first recess space between the first substrate side wall capacitor electrode and the second substrate side wall capacitor electrode is electrostatic capacitance. Space,
The first substrate side wall capacitor electrode vibrates and displaces by force (acceleration, angular velocity, pressure, etc.), and the capacitance (acceleration, angular velocity, pressure, etc.) changes by changing the capacitance of the first recess space. )
Further, the upper surface of the first substrate side wall is attached to the thin plate substrate, and / or the upper surface of the second substrate side wall is attached to the thin plate substrate,
Capacitance type force sensor characterized by. 78. The capacitive force sensor according to claim 77, wherein the main substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof. 79. The capacitive force sensor according to claim 77 or 78, wherein the thin plate substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof. The thickness of the main substrate is 2.0 mm or less, preferably 1.0 mm or less, and the thickness of the first surface first surface thin plate is 1.0 mm or less, preferably 0.5 mm or less. The capacitance type force sensor according to any one of claims 77 to 79, wherein the thickness of the two-sided thin plate is 1.0 mm or less. Electrically connecting the electrode / wiring formed on the first surface insulator substrate and the first substrate side wall through a contact hole formed in the first surface insulator substrate attached to the upper surface of the first substrate side wall;
The electrode / wiring formed on the first surface insulator substrate is electrically connected to the second substrate side wall through a contact hole formed in the first surface insulator substrate attached to the upper surface of the second substrate side wall. The capacitive force sensor according to any one of claims 77 to 80. It has a through groove (second through groove) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is an n-square shape, where n is an integer of 3 or more and corresponds to each side surface. A plurality of second substrate side walls, the plurality of second substrate side walls are not electrically connected to each other, and force (acceleration, angular velocity, pressure, or the like) is introduced into the second through groove. The capacitive force sensor according to any one of claims 77 to 81. There is a through groove (second through groove) surrounded by the first substrate side wall, and at least a part of the outer cross-sectional shape of the first substrate side wall is a curved shape, and the inner cross-sectional shape of the second substrate side wall is the first cross section. The capacitance type force sensor according to any one of claims 77 to 81, wherein the capacitance type force sensor has a shape similar to an outer cross-sectional shape of a substrate side wall. The first substrate side wall has a through groove (second through groove) surrounded by the first substrate side wall, the outer cross-sectional shape of the first substrate side wall is circular or elliptical, and the inner cross-sectional shape of the second substrate side wall is the first substrate The capacitance type force sensor according to any one of claims 77 to 81, wherein the capacitance type force sensor is similar to an outer cross-sectional shape of the side wall. A third substrate side wall surrounding the first substrate side wall and the second substrate side wall; an upper surface of the third substrate side wall is attached to the first surface insulator substrate; and a lower surface of the third substrate side wall is attached to the second surface insulator substrate The third substrate sidewall is not electrically connected to one or both of the first substrate sidewall and the second substrate sidewall, and the third substrate sidewall is outside the chip package of the capacitive force sensor device. The first surface insulator substrate becomes the upper surface or the lower surface of the chip package of the capacitive force sensor device, and the second surface insulator substrate becomes the lower surface or the upper surface of the chip package of the capacitance force sensor device. 85. The capacitive force sensor according to any one of claims 77 to 84, wherein: Capacitance type competence having at least two adjacent concave portions (first concave portion and second concave portion) opened on the upper surface of the insulating polymer formed on the main substrate and having a thin plate substrate attached to the upper surface of the main substrate. A sensor,
A conductor film formed on the substrate side wall (side surface of the first substrate) of the insulating polymer that separates two adjacent concave portions in the lateral direction (substantially perpendicular to the thickness direction of the insulating polymer) Electrode (first substrate side wall capacitor electrode),
An insulating polymer substrate sidewall (second) that faces the first substrate sidewall capacitor electrode across one of the adjacent recesses (first recess) and is not electrically connected to the first substrate sidewall capacitor electrode. The conductive film formed on the side surface of the substrate side wall is used as the other counter electrode (second substrate side wall capacitor electrode), and the first recess space between the first substrate side wall capacitor electrode and the second substrate side wall capacitor electrode is defined as Capacitance space,
The first substrate side wall capacitor electrode vibrates and displaces by force (acceleration, angular velocity, pressure, etc.), and the capacitance (acceleration, angular velocity, pressure, etc.) changes by changing the capacitance of the first recess space. )
Further, the upper surface of the first substrate side wall is attached to the thin plate substrate, and / or the upper surface of the second substrate side wall is attached to the thin plate substrate,
Capacitance type force sensor characterized by. 87. The capacitive force sensor according to claim 86, wherein the main substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof. 88. The capacitive force sensor according to claim 86 or 87, wherein the thin plate substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof. The thickness of the main substrate is 2.0 mm or less, preferably 1.0 mm or less, and the thickness of the thin plate substrate is 1.0 mm or less, preferably 0.5 mm or less. The capacitive force sensor according to any one of 86 to 88. The capacitive force sensor according to any one of claims 86 to 89, wherein the thickness of the insulating polymer is 1.0 mm or less, preferably 0.5 mm or less. The electrode / wiring formed on the thin plate substrate and the first upper surface conductor film wiring formed on the upper surface of the first substrate side wall are connected through contact holes formed in the thin plate substrate attached to the upper surface of the first substrate side wall, and 1 upper surface conductor film wiring is electrically connected to the first substrate side wall capacitor electrode;
The electrode / wiring formed on the thin plate substrate and the second upper surface conductor film wiring formed on the upper surface of the second substrate side wall are connected through contact holes formed on the thin plate substrate attached to the upper surface of the second substrate side wall, and The capacitance type force sensor according to any one of claims 86 to 90, wherein the two upper surface conductor film wirings are electrically connected to the second substrate side wall capacitor electrode. The first substrate side wall has a concave portion (second concave portion) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is an n-gonal shape, where n is an integer of 3 or more and a plurality of numbers corresponding to each side surface. And a plurality of second substrate side walls are not electrically connected to each other, and force (acceleration, angular velocity, pressure, or the like) is introduced into the second recess. 92. The capacitive force sensor according to any one of items 86 to 91. The first substrate side wall has a recess (second recess) surrounded by the first substrate side wall, and at least one part of the outer cross-sectional shape of the first substrate side wall is a curved shape, and the inner cross-sectional shape of the second substrate side wall is the first substrate side wall 92. The electrostatic capacity type force quantity according to any one of claims 86 to 91, wherein a force quantity (acceleration, angular velocity, pressure, or the like) is introduced into the second recess. Sensor. 92. The method according to claim 86, further comprising: a through groove (second through groove) surrounded by the first substrate side wall, wherein the outer cross-sectional shape of the first substrate side wall is a circular shape or an elliptical shape. The capacitive force sensor according to the item. A third substrate side wall surrounding the first substrate side wall and the second substrate side wall; an upper surface of the third substrate side wall is attached to the thin substrate; and the third substrate side wall is one of the first substrate side wall and the second substrate side wall. Alternatively, the side wall of the third substrate is the outer side surface of the chip package of the capacitive force sensor device, and the thin board is connected to the upper surface or the lower surface of the chip package of the capacitive force sensor device. 95. The capacitive force sensor according to any one of claims 86 to 94, wherein: 96. The capacitive type according to claim 86, wherein the main substrate is a semiconductor substrate, and an insulating polymer is formed in a recess (main recess) formed in the main substrate. Force sensor. 97. The capacitive force sensor according to any one of claims 86 to 96, wherein the recess is formed by an imprint method. Capacitance type competence having at least two adjacent recesses (first recess and second recess) opened on the upper surface of the conductive polymer formed on the main substrate, and having a thin plate substrate attached to the upper surface of the main substrate A sensor,
A conductive polymer substrate side wall (first substrate side wall) (side surface thereof) separating two adjacent concave portions in the lateral direction (a direction substantially perpendicular to the thickness direction of the conductive polymer) is one electrode (first substrate side wall). Capacitive electrode)
A substrate side wall (second layer) of a conductive polymer that faces the first substrate side wall capacitor electrode across one of the adjacent recesses (first recess) and is not electrically conductive with the first substrate side wall capacitor electrode. (Side wall of the substrate) is used as the other counter electrode (second substrate side wall capacitor electrode), and the first recess space between the first substrate side wall capacitor electrode and the second substrate side wall capacitor electrode is used as the capacitance space. ,
The first substrate side wall capacitor electrode vibrates and displaces by force (acceleration, angular velocity, pressure, etc.), and the capacitance (acceleration, angular velocity, pressure, etc.) changes by changing the capacitance of the first recess space. )
Further, the upper surface of the first substrate side wall is attached to the thin plate substrate, and / or the upper surface of the second substrate side wall is attached to the thin plate substrate,
Capacitance type force sensor characterized by. 99. The capacitive force sensor according to claim 98, wherein the main substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof. 99. The capacitive force sensor according to claim 98 or 99, wherein the thin plate substrate is a conductor substrate, a semiconductor substrate, an insulator substrate, or a composite substrate thereof. The thickness of the main substrate is 2.0 mm or less, preferably 1.0 mm or less, and the thickness of the thin plate substrate is 1.0 mm or less, preferably 0.5 mm or less. The capacitive force sensor according to any one of 98 to 100. The capacitive force sensor according to any one of claims 98 to 101, wherein the thickness of the conductive polymer is 1.0 mm or less, preferably 0.5 mm or less. The electrode / wiring formed on the thin plate substrate is connected to the upper surface of the first substrate side wall through the contact hole formed on the thin plate substrate attached to the upper surface of the first substrate side wall,
The electrode / wiring formed on the thin plate substrate is connected to the upper surface of the second substrate side wall through a contact hole formed on the thin plate substrate attached to the upper surface of the second substrate side wall. The electrostatic capacity type force sensor according to claim 1. The first substrate side wall has a concave portion (second concave portion) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is an n-gonal shape, where n is an integer of 3 or more and a plurality of numbers corresponding to each side surface. And a plurality of second substrate side walls are not electrically connected to each other, and force (acceleration, angular velocity, pressure, or the like) is introduced into the second recess. The capacitive force sensor according to any one of Items 98 to 103. The first substrate side wall has a recess (second recess) surrounded by the first substrate side wall, and at least one part of the outer cross-sectional shape of the first substrate side wall is a curved shape, and the inner cross-sectional shape of the second substrate side wall is the first substrate side wall The capacitance-type force quantity according to any one of claims 98 to 103, wherein a shape (similar to an outer cross-sectional shape) is introduced and force (acceleration, angular velocity, pressure, or the like) is introduced into the second recess. Sensor. 104. The method according to claim 98, further comprising a through groove (second through groove) surrounded by the first substrate side wall, wherein the outer cross-sectional shape of the first substrate side wall is circular or elliptical. The capacitive force sensor according to the item. A third substrate side wall surrounding the first substrate side wall and the second substrate side wall; an upper surface of the third substrate side wall is attached to the thin substrate; and the third substrate side wall is one of the first substrate side wall and the second substrate side wall. Alternatively, the side wall of the third substrate is the outer side surface of the chip package of the capacitive force sensor device, and the thin board is connected to the upper surface or the lower surface of the chip package of the capacitive force sensor device. The capacitive force sensor according to any one of claims 98 to 106, wherein: The capacitive substrate according to any one of claims 98 to 107, wherein the main substrate is a semiconductor substrate, and an insulating polymer is formed in a recess (main recess) formed in the main substrate. Force sensor. The capacitive force sensor according to any one of claims 98 to 108, wherein the recess is formed by an imprint method. In the bonded substrate in which the conductor substrate and the low concentration substrate are bonded, the bonded substrate has at least two adjacent recesses (first recess and second recess) opened on the surface on the conductor substrate side,
The recess is formed in a direction substantially perpendicular to the surface of the bonding substrate (± 10 degrees or less, preferably ± 5 degrees or less, optimally ± 1 degree or less with respect to the direction perpendicular to the surface),
The bottom of the recess exists on the low concentration substrate side beyond the junction of the conductor substrate and the low concentration substrate,
A capacitive force sensor having a thin substrate attached to the upper surface of the bonding substrate,
A bonding substrate side wall (first substrate side wall) (side surface thereof) separating two adjacent concave portions in the lateral direction (substantially perpendicular to the thickness direction of the bonding substrate) is defined as one electrode (first substrate side wall capacitor electrode). ,
A junction substrate side wall (second substrate side wall) that faces the first substrate side wall capacitor electrode across one of the adjacent recesses (first recess) and is not electrically connected to the first substrate side wall capacitor electrode. (Side surface) is the other counter electrode (second substrate sidewall capacitor electrode), and the first recess space between the first substrate sidewall capacitor electrode and the second substrate sidewall capacitor electrode is the capacitance space,
The first substrate side wall capacitor electrode vibrates and displaces by force (acceleration, angular velocity, pressure, etc.), and the capacitance (acceleration, angular velocity, pressure, etc.) changes by changing the capacitance of the first recess space. )
Further, the upper surface of the first substrate side wall is attached to the thin plate substrate, and / or the upper surface of the second substrate side wall is attached to the thin plate substrate,
Capacitance type force sensor characterized by. The conductor substrate is a high-concentration silicon semiconductor substrate (impurity concentration of 10 ¹⁹ / cm ³ or more), and the low-concentration semiconductor substrate is a low-concentration silicon semiconductor substrate (impurity concentration of 10 ¹⁷ / cm ³ or less). 111. The capacitive force sensor according to claim 110, wherein the conductive type of the concentration silicon semiconductor substrate is opposite to the conductive type of the low concentration silicon semiconductor substrate. The capacitive force sensor according to claim 111, wherein the bonding substrate is an epitaxial substrate, and the low-concentration silicon semiconductor substrate is an epitaxial layer formed by epitaxial growth on the high-concentration silicon semiconductor substrate. In the bonded substrate in which the bonded conductive substrate and the low concentration substrate are bonded, an insulating film is interposed between the conductive substrate and the low concentration substrate, and the bonded substrate is open at least on the surface on the conductive substrate side. Two adjacent recesses (first recess and second recess),
The recess is formed in a direction substantially perpendicular to the surface of the bonding substrate (± 10 degrees or less, preferably ± 5 degrees or less, optimally ± 1 degree or less with respect to the direction perpendicular to the surface),
The bottom of the recess exists on the insulator film or low concentration substrate side beyond the conductor substrate,
A capacitive force sensor having a thin substrate attached to the upper surface of the bonding substrate,
A bonding substrate side wall (first substrate side wall) that separates two adjacent concave portions in the lateral direction (substantially perpendicular to the thickness direction of the bonding substrate) is defined as one electrode (first substrate side wall capacitor electrode). ,
A junction substrate side wall (second substrate side wall) that faces the first substrate side wall capacitor electrode across one of the adjacent recesses (first recess) and is not electrically connected to the first substrate side wall capacitor electrode. (Side surface) is the other counter electrode (second substrate sidewall capacitor electrode), and the first recess space between the first substrate sidewall capacitor electrode and the second substrate sidewall capacitor electrode is the capacitance space,
The first substrate side wall capacitor electrode vibrates and displaces by force (acceleration, angular velocity, pressure, etc.), and the capacitance (acceleration, angular velocity, pressure, etc.) changes by changing the capacitance of the first recess space. )
Further, the upper surface of the first substrate side wall is attached to the thin plate substrate, and / or the upper surface of the second substrate side wall is attached to the thin plate substrate,
Capacitance type force sensor characterized by. The thickness of the bonded substrate is 2.0 mm or less, preferably 1.0 mm or less, and the thickness of the thin plate substrate is 1.0 mm or less, preferably 0.5 mm or less. 110. The capacitive force sensor according to any one of 110 to 113. The capacitive force sensor according to any one of claims 110 to 114, wherein a thickness of the conductor substrate is 1.0 mm or less, and preferably 0.5 mm or less. The electrode / wiring formed on the thin plate substrate is connected to the upper surface of the first substrate side wall through the contact hole formed on the thin plate substrate attached to the upper surface of the first substrate side wall,
The electrode / wiring formed on the thin plate substrate and the upper surface of the second substrate side wall are connected to each other through a contact hole formed in the thin plate substrate attached to the upper surface of the second substrate side wall. The electrostatic capacity type force sensor according to claim 1. The first substrate side wall has a concave portion (second concave portion) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is an n-gonal shape, where n is an integer of 3 or more and a plurality of numbers corresponding to each side surface. And a plurality of second substrate side walls are not electrically connected to each other, and force (acceleration, angular velocity, pressure, or the like) is introduced into the second recess. Item 110. The capacitive force sensor according to any one of Items 110 to 116. The first substrate side wall has a recess (second recess) surrounded by the first substrate side wall, and at least one part of the outer cross-sectional shape of the first substrate side wall is a curved shape, and the inner cross-sectional shape of the second substrate side wall is the first substrate side wall The capacitance-type force quantity according to any one of claims 110 to 116, wherein the shape is similar to the outer cross-sectional shape of the first shape, and a force quantity (acceleration, angular velocity, pressure, or the like) is introduced into the second recess. Sensor. The through-groove (second recess) surrounded by the first substrate side wall, and the outer cross-sectional shape of the first substrate side wall is circular or elliptical. The capacitive force sensor according to 1. A third substrate side wall surrounding the first substrate side wall and the second substrate side wall; an upper surface of the third substrate side wall is attached to the thin substrate; and the third substrate side wall is one of the first substrate side wall and the second substrate side wall. Alternatively, the side wall of the third substrate is the outer side surface of the chip package of the capacitive force sensor device, and the thin board is connected to the upper surface or the lower surface of the chip package of the capacitive force sensor device. 120. The capacitive force sensor according to any one of claims 110 to 119, wherein: 120. The capacitive force sensor according to any one of claims 61 to 119, wherein the force sensor is an acceleration sensor, an angular velocity sensor, or a pressure sensor.
A recess or a through-hole formed from a first surface (front surface) to a second surface (back surface) of the substrate and substantially perpendicular to the substrate surfaces (first surface and second surface) is used. An electric double layer capacitor, wherein two opposing side surfaces of the recess or the through hole are electrodes (counter electrodes), and an electrolyte is provided in the recess or the through hole between the counter electrodes. . A recess or a through-hole formed from a first surface (front surface) to a second surface (back surface) of the substrate and substantially perpendicular to the substrate surfaces (first surface and second surface) is used. An electric double-layer capacitor having a substrate sidewall formed between adjacent recesses and another substrate sidewall facing the substrate sidewall in at least one of the recesses or through-holes as a counter electrode. An electric double layer capacitor, being a double layer capacitor, having an electrolyte in the recess or through hole between the opposing substrate side wall electrodes. An electric double layer capacitor using a recess or a through hole formed from a first surface (front surface) to a second surface (back surface) of a substrate, wherein the protrusion is inserted into the recess or the through hole. An electric double layer capacitor having an electrolyte between the counter electrode and the counter electrode in the inserted recess or through-hole. The electric double layer capacitor according to any one of claims 122 to 124, wherein the electrolyte is an electrolytic solution, a gel electrolyte, or a solid electrolyte. Using a recess or a through hole formed from the first surface (front surface) of the piezoelectric substrate to the second surface (back surface) and substantially perpendicular to the substrate surface (first surface and second surface). This is a micro-generator that is formed on both side surfaces of a substrate side wall by deforming the substrate side wall using two conductive film / electrodes formed on both side surfaces of the substrate side wall formed by adjacent recesses. A micro-generator that collects electric charges by the conductor film / electrode and generates electric power. Using a recess or a through-hole formed from the first surface (front surface) to the second surface (back surface) of the substrate and substantially perpendicular to the substrate surfaces (first surface and second surface). A generator, in which a first conductor film is formed on a side surface of a substrate side wall formed by adjacent recesses, a piezoelectric film is formed thereon, and a second conductor film is formed thereon, and the substrate side wall is deformed. To generate electric power by collecting charges generated on both surfaces of the piezoelectric film by the first conductor film and / or the second conductor film. A micro-generator using a recess (inner polymer recess) formed in a piezoelectric polymer filled in a recess formed in a substrate, wherein the polymer substrate is formed by an adjacent in-polymer recess Conductor films / electrodes formed on both side surfaces of the side wall are used as two electrodes, and electric charges generated on both side surfaces of the polymer substrate side wall due to deformation of the polymer substrate side wall are collected by the conductor film / electrode to generate electric power. A micro-generator characterized by A micro-generator using a recess (intra-polymer recess) formed in a polymer filled in a recess formed in a substrate, wherein the side wall of the polymer substrate formed by the adjacent in-polymer recess A first conductive film is formed on both side surfaces, a piezoelectric film is formed on the first conductive film, and a second conductive film is formed on the first conductive film. A micro-generator characterized in that power is collected by a conductor film and / or a second conductor film.