JP2014022500A - Vapor growth device and manufacturing method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor growth device capable of reducing the generation of a foreign substance caused by exfoliation of a by-product, by controlling the temperature of a susceptor or a gas passage forming member.SOLUTION: The vapor growth device is configured to perform vapor growth by heating a substrate 4 to be treated by causing source gas to flow through a gas passage on the substrate 4 to be treated. The vapor growth device comprises: a susceptor 1 for holding the substrate 4 to be treated; a gas passage forming member 7 which is disposed in counter to the susceptor 1 so as to constitute the gas passage between the gas passage forming member and the susceptor 1; and a plurality of thermometers provided on at least either the susceptor 1 or the gas passage forming member 7. The plurality of thermometers include a first thermometer and a second thermometer which is provided at a downstream side of the gas passage with respect to the first thermometer.

Description

  The present invention relates to a vapor phase growth apparatus and a method for manufacturing a semiconductor device, and more particularly, to control the temperature of a susceptor or a gas flow path forming member and reduce the generation of foreign substances due to peeling of by-products. The present invention relates to a growth apparatus and a method for manufacturing a semiconductor device.

  In the field of semiconductor devices, a film forming technique for forming a desired film on the surface of a substrate is one of important manufacturing techniques. Among these film formation techniques, MOCVD (Metal Organic Chemical Vapor Deposition) has attracted attention as a film formation technique that can form an effective compound semiconductor thin film such as an optical device or a light speed device.

  For example, in Japanese Patent Application Laid-Open No. 2006-173540 (Patent Document 1), a substrate to be processed supported by a susceptor provided in a reaction tube is heated via the susceptor, and a source gas is parallel to the surface of the substrate to be processed. In a vapor phase growth apparatus that performs vapor phase growth of a thin film by flowing a gas, the temperature of the source gas introduced into the reaction tube is controlled to be equal to or lower than the thermal decomposition temperature in the reaction tube upstream of the susceptor in the source gas flow direction. A second temperature control region in which a temperature control region is provided, and is controlled between the first temperature control region and the susceptor so as to be higher than the temperature controlled by the first temperature control region and lower than the substrate heating temperature. What is characterized by providing is disclosed.

  In JP 2005-322837 A (Patent Document 2), a source gas is introduced into a reaction tube provided with a substrate to be processed, and the introduced source gas is heated to cause a chemical reaction while being heated. In a vapor phase growth apparatus for growing a film forming raw material component on a substrate to be processed by flowing it in a direction along the surface on which the film is formed, a plurality of devices provided upstream of the substrate in the reaction tube in the gas flow direction. And a control means for individually controlling the temperature of the plurality of gas heaters is disclosed.

JP 2006-173540 A JP 2005-322837 A

  FIG. 8 is a diagram showing a schematic cross-sectional view of a conventional horizontal general vapor phase growth apparatus formed so that the source gas flows in the horizontal direction.

  The conventional vapor phase growth apparatus has a susceptor 1 that supports a substrate 4 to be processed via a substrate holding member 3. A heater 2 for heating is disposed below the susceptor 1, and the substrate to be processed 4 can be heated via the susceptor 1 by operating the heater 2. The heater 2 is separated from the susceptor 1 and heats the susceptor 1 through the surrounding atmosphere. The heater 2 is operated, and the raw material gas is introduced into the reaction chamber 6 from the gas inlet 5 provided on one side surface of the reaction chamber 6 in a state where the temperature of the substrate 4 to be processed has reached a predetermined temperature. The introduced source gas flows through the gas flow path formed between the gas flow path forming member 7 provided in the upper part of the reaction chamber 6 and the susceptor 1 (arrow in FIG. 8), and reaches the surface of the substrate 4 to be processed. Supplied.

  In a region facing the substrate 4 to be processed, the source gas is thermally decomposed, and a crystal film is formed on the substrate 4 to be processed. Gas that does not contribute to film formation is exhausted from a gas exhaust port 8 provided on the other side surface of the reaction chamber 6.

  Here, the susceptor 1 has a rotation axis and can rotate around the rotation axis. The substrate holding member 3 can be rotated while holding the substrate to be processed 4. By rotating the susceptor 1 and the substrate holding member 3, the temperature distribution of the substrate to be processed 4 can be made uniform and the source gas concentration on the substrate to be processed 4 can be made uniform. It is possible to grow uniformly on the processing substrate 4.

  However, since the temperature of not only the substrate to be processed 4 but also the susceptor 1 and the gas flow path forming member 7 is increased by the film forming heater 2 during film formation, the source gas is exposed to the surface of the susceptor 1 and the gas flow path forming member 7. And by-products are formed. When the by-product attached to the surface of the susceptor 1 or the gas flow path forming member 7 is peeled off, it becomes a foreign substance and adheres to the substrate 4 to be processed, resulting in a problem that the yield is lowered.

  On the other hand, in the invention described in Patent Document 1 or Patent Document 2, the temperatures of the susceptor 1 and the gas flow path forming member 7 are not sufficiently controlled and are generated in the susceptor 1 and the gas flow path forming member 7. The generation of foreign substances due to peeling of by-products is not fully considered.

  The present invention has been made in view of the above problems, and an object of the present invention is to control the temperature of a susceptor or a gas flow path forming member and reduce the generation of foreign substances due to peeling of by-products. It is another object of the present invention to provide a vapor phase growth apparatus and a method for manufacturing a semiconductor device.

  A vapor phase growth apparatus according to the present invention performs vapor phase growth by flowing a raw material gas through a gas flow path on a substrate to be processed and heating the substrate to be processed, and a susceptor for holding the substrate to be processed; A gas flow path forming member disposed to face the susceptor so as to form a gas flow path between the susceptor and a plurality of thermometers provided on at least one of the susceptor and the gas flow path forming member. Is provided. The plurality of thermometers includes a first thermometer and a second thermometer provided on the downstream side of the gas flow path with respect to the first thermometer.

  In one embodiment, the vapor phase growth apparatus further includes a temperature control mechanism that controls the temperature at a predetermined position in the gas flow path based on the measurement results of a plurality of thermometers.

  In one embodiment, in the vapor phase growth apparatus, the temperature control mechanism includes a first temperature control mechanism that controls a temperature at a first position in the gas flow path based on a measurement result of the first thermometer, and a second temperature control mechanism. And a second temperature control mechanism that controls the temperature of the second position downstream of the first position in the gas flow path based on the measurement result of the thermometer. The first temperature control mechanism and the second temperature control mechanism can control the temperatures of the first position and the second position independently of each other.

  In one embodiment, in the vapor phase growth apparatus, the plurality of temperature control mechanisms include a plurality of annular members arranged so as to have the same center.

  In one embodiment, in the vapor phase growth apparatus, the temperature control mechanism includes a temperature adjusting member disposed at a position separated from the gas flow path.

  A method of manufacturing a semiconductor device according to the present invention includes a step of preparing a semiconductor substrate, a step of holding the semiconductor substrate by a susceptor, a step of flowing a source gas through a gas flow path formed on the susceptor, At least one of the susceptor and the gas flow path forming member by a plurality of thermometers including a first thermometer disposed on the upstream side and a second thermometer disposed on the downstream side of the gas flow path with respect to the first thermometer. A step of heating the semiconductor substrate with a heater through a susceptor while measuring one temperature.

  In one embodiment, the manufacturing method of the semiconductor device further includes a step of heating or cooling a predetermined position of the gas flow path based on measurement results of the plurality of thermometers.

  In one embodiment, in the method of manufacturing the semiconductor device, in the step of heating or cooling the predetermined position of the gas flow path, the temperatures of the first position and the second position in the gas flow path are adjusted independently of each other.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the vapor phase growth apparatus which can control the temperature of a susceptor or a gas flow path formation member, and can reduce the foreign material by a by-product, and a semiconductor device can be provided.

It is a schematic sectional drawing of the vapor phase growth apparatus which concerns on Embodiment 1 of this invention. It is a figure explaining the detail of the gas flow path formation member and susceptor shown in FIG. It is a figure explaining the temperature control mechanism shown in FIG. It is a flowchart which shows the manufacturing flow of a semiconductor device. It is a figure explaining operation | movement of the temperature control mechanism in the area | region where gas concentrations differ. It is a graph which shows the relationship between the temperature of a susceptor, and the number of the foreign materials on a to-be-processed substrate. It is a graph which shows the relationship between the temperature of a gas flow path formation member, and the number of the foreign materials on a to-be-processed substrate. It is a schematic sectional drawing of the conventional vapor phase growth apparatus.

  Embodiments of the present invention will be described below. Note that the same or corresponding portions are denoted by the same reference numerals, and the description thereof may not be repeated.

  Note that in the embodiments described below, when referring to the number, amount, and the like, the scope of the present invention is not necessarily limited to the number, amount, and the like unless otherwise specified. In the following embodiments, each component is not necessarily essential for the present invention unless otherwise specified.

(Embodiment 1)
FIG. 1 is a schematic cross-sectional view of a vapor phase growth apparatus according to the first embodiment. Referring to FIG. 1, the vapor phase growth apparatus according to the present embodiment includes a susceptor 1 that holds a substrate to be processed 4 via a substrate holding member 3, a heater 2 provided below the susceptor 1, and a reaction. The gas inlet 5 provided in the center of the chamber 6, the gas flow path forming member 7 that is disposed opposite to the susceptor 1 to form the flow path of the source gas, the gas exhaust port 8, and the susceptor 1 are rotated. And a rotating shaft 9.

  The susceptor 1 has a disk shape, for example, and a plurality of substrates to be processed 4 can be installed on the susceptor 1.

  By operating the heater 2, the substrate 4 to be processed can be heated via the susceptor 1. At this time, the gas flow path forming member 7 is also heated through the surrounding atmosphere. The substrate 4 to be processed is held by the substrate holding member 3 formed in the recess of the susceptor 1. The substrate holding member 3 can rotate.

  The gas inlet 5 is formed of, for example, a multilayer tube coaxial with the central axis, and can introduce a plurality of source gases in a direction parallel to the substrate 4 to be processed (arrow in FIG. 1). The introduced source gas passes between the gas flow path forming member 7 and the susceptor 1 and is discharged from the gas exhaust port 8. The gas flow path forming member 7 is a disk-shaped member centered on the gas inlet 5. The gas inlet 5 and the rotating shaft 9 are arranged so that the central axes are coaxial and face each other. The gas exhaust port 8 is formed so as to sandwich the susceptor 1 under the reaction chamber 6.

  FIG. 2 is a diagram illustrating details of the gas flow path forming member and the susceptor shown in FIG. Referring to FIG. 2, three upper temperature control mechanisms 10 a to 10 c and three upper thermometers 11 a to 11 c are arranged on the upper surface of gas flow path forming member 7. The upper temperature control mechanisms 10a to 10c are arranged side by side from upstream to downstream in the direction of travel of the source gas. Upper temperature control mechanisms 10a to 10c and upper thermometers 11a to 11c are alternately arranged.

  Further, on the lower surface of the susceptor 1, three lower temperature control mechanisms 12a to 12c and three lower thermometers 13a to 13c are arranged. The lower temperature control mechanisms 12a to 12c are arranged side by side from the upstream to the downstream in the traveling direction of the source gas. The lower thermometers 13a to 13c are arranged alternately with the lower temperature control mechanisms 12a to 12c.

  The upper temperature control mechanism 10a, the upper thermometer 11a, the lower temperature control mechanism 12a, and the lower thermometer 13a are arranged on the inner peripheral side (the gas inlet 5 and the rotary shaft 9 side) with respect to the substrate 4 to be processed. The upper temperature control mechanism 10b, the upper thermometer 11b, the lower temperature control mechanism 12b, and the lower thermometer 13b are arranged in a range that overlaps the target substrate 4 in the direction in which the gas flow path forming member 7 and the susceptor 1 are arranged. . The upper temperature control mechanism 10c, the upper thermometer 11c, the lower temperature control mechanism 12c, and the lower thermometer 13c are arranged on the outer peripheral side (gas exhaust port 8 side) of the substrate 4 to be processed.

  The upper temperature control mechanisms 10a to 10c and the lower temperature control mechanisms 12a to 12c have, for example, a heater as a temperature adjustment member. The upper temperature control mechanisms 10a to 10c and the lower temperature control mechanisms 12a to 12c are connected to the control unit, and the gas flow path is formed by controlling the output of the heater by the control unit based on the result measured by the thermometer. The temperature of the member 7 and the susceptor 1 is controlled.

  The output control of the heater may be manually input, or may be automatically performed based on the correlation between the heater output value and the temperatures of the gas flow path forming member 7 and the susceptor 1 that have been grasped in advance. . The temperatures of the upper temperature control mechanisms 10a to 10c and the lower temperature control mechanisms 12a to 12c can be controlled independently of each other.

  For example, thermocouples are used for the upper thermometers 11a to 11c and the lower thermometers 13a to 13c. The thermocouple may be provided in contact with the upper surface of the gas flow path forming member 7 and the lower surface of the susceptor 1, or may be embedded in the gas flow path forming member 7 and the susceptor 1.

  FIG. 3 is a diagram for explaining the temperature control mechanism shown in FIG. FIG. 3A is a top view of the gas flow path forming member in which the upper temperature control mechanism and the upper thermometer are arranged. FIG. 3B is a top view of the susceptor in which the lower temperature control mechanism is arranged.

  Referring to FIG. 3 (a), upper temperature control mechanisms 10a to 10c are formed in an annular shape around the central axis of gas introduction port 5 on the upper surface of gas flow path forming member 7, and the diameters thereof are different. ing. The widths of the upper temperature control mechanisms 10a to 10c may be the same or different. For example, the width of the upper temperature control mechanisms 10a to 10c may be increased in order from the inner peripheral side (10a side) to the outer peripheral side (10c side), or from the inner peripheral side (10a side) to the outer peripheral side (10c side). ) May be made smaller in order. By changing the width, the amount of heat propagated to the gas flow path forming member 7 can be changed.

  The upper thermometer 11a is disposed between the upper temperature control mechanisms 10a and 10b, the upper thermometer 11b is disposed between the upper temperature control mechanisms 10b and 10c, and the upper thermometer 11c is the upper temperature control mechanism 10c. It is arrange | positioned at the outer peripheral side.

  With reference to FIG. 3B, a plurality of substrate holding members 3 are arranged on the upper surface of the susceptor 1 at equal intervals in the circumferential direction around the rotation shaft 9. A substrate 4 to be processed is disposed in the center of the substrate holding member 3. Lower temperature control mechanisms 12 a to 12 c are formed in an annular shape around the central axis of the rotation shaft 9 on the lower surface of the susceptor 1, and the diameters thereof are different.

  The widths of the lower temperature control mechanisms 12a to 12c may be the same or different. For example, the widths of the lower temperature control mechanisms 12a to 12c may be increased in order from the inner peripheral side (12a side) to the outer peripheral side (12c side), or from the inner peripheral side (12a side) to the outer peripheral side (12c side). ) May be made smaller in order. By changing the width, the amount of heat propagated to the susceptor 1 can be changed.

  The lower thermometer 13a is disposed between the lower temperature control mechanisms 12a and 12b, the lower thermometer 13b is disposed between the lower temperature control mechanisms 12b and 12c, and the lower thermometer 13c is the lower temperature control mechanism 12c. It is arrange | positioned at the outer peripheral side.

  FIG. 4 is a flowchart showing a manufacturing flow of the semiconductor device. Referring to FIG. 4, first, a substrate 4 to be processed to be mounted on the susceptor 1 of the vapor phase growth apparatus according to the present embodiment is prepared (step S10). The prepared plurality of substrates to be processed 4 are respectively placed on the substrate holding member 3 (step S20). Next, the susceptor 1 is heated by the heater 2, and the temperature of the substrate 4 to be processed is raised to a temperature necessary for the film forming process (a temperature necessary for thermally decomposing the source gas) (step S30). At this time, the susceptor 1 and the substrate holding member 3 are rotated.

  After the temperature of the substrate to be processed 4 reaches a temperature at which the source gas is thermally decomposed, the source gas is introduced from the gas inlet 5 disposed in the central portion of the reaction chamber 6 (step S40). The source gas is introduced radially toward the outer periphery of the susceptor so as to be parallel to each substrate 4 to be processed. The introduced source gas flows through the gas flow path formed by the gas flow path forming member 7 and the susceptor 1. When the source gas reaches the surface of the substrate 4 to be processed, the source gas is decomposed by heat from the heated surface of the substrate 4 to be processed. And the film | membrane which uses the component of source gas as a raw material is formed in the surface of the to-be-processed substrate 4. FIG.

  Here, since the susceptor 1 and the substrate holding member 3 are rotating, the temperature of the substrate to be processed 4 becomes uniform, and the concentration of the source gas on the substrate to be processed 4 becomes uniform. As a result, the crystal film as the semiconductor layer can be uniformly grown on the substrate 4 to be processed.

  At this time, the heat released from the heater 2 propagates to the gas flow path forming member 7 through the ambient atmosphere of the heater 2, so that not only the temperature of the susceptor 1 but also the temperature of the gas flow path forming member 7 rises. To do. The gas flow path forming member 7 and the susceptor 1 whose temperature has increased react with the raw material gas, and a by-product is generated on the surfaces of the gas flow path forming member 7 and the susceptor 1. When the by-product is peeled off, it may become a foreign substance and adhere to the surface of the substrate 4 to be processed.

  Therefore, the temperature of the susceptor 1 and the gas flow path forming member 7 is measured by the lower thermometers 13a to 13c and the upper thermometers 11a to 11c when the heater 2 is driven and the raw material gas is introduced (step S50). Based on the measured temperature, the susceptor 1 and the gas flow path forming member 7 are heated or cooled by the lower temperature control mechanisms 12a to 12c and the upper temperature control mechanisms 10a to 10c. Is controlled (step S60).

  In this way, it is possible to prevent the by-product from peeling off from the susceptor 1 and the gas flow path forming member 7 and adhere to the surface of the substrate 4 to be processed, thereby improving the yield in the formation of the thin film. Note that the raw material gas used for film formation is discharged from the gas exhaust port 8.

Next, the operation of the temperature control mechanism will be described. FIG. 5 is a diagram for explaining the operation of the temperature control mechanism in regions with different gas concentrations. As shown in FIG. 5, the space between the susceptor 1 and the gas flow path forming member 7 and the upper temperature control mechanisms 10a to 10c, the upper thermometers 11a to 11c, the lower temperature control mechanisms 12a to 12c, and the lower thermometer The region in which 13a to 13c are arranged can be divided into a source gas upstream portion 14, a substrate portion 15 to be processed, and a source gas downstream portion 16 according to the source gas concentration. For example, TMGa (trimethyl gallium), NH ₃ or the like is used as the source gas.

  The source gas upstream portion 14 is a region before the source gas reaches the substrate 4 to be processed. The processed substrate portion 15 is a region where the source gas reaches the processed substrate 4 and is thermally decomposed. The source gas downstream portion 16 is a region after the source gas is thermally decomposed.

  In the raw material gas upstream portion 14, an upper temperature control mechanism 10a, an upper thermometer 11a, a lower temperature control mechanism 12a, and a lower thermometer 13a are arranged. An upper temperature control mechanism 10b, an upper thermometer 11b, a lower temperature control mechanism 12b, and a lower thermometer 13b are disposed on the processing target substrate portion 15. In the raw material gas downstream portion 16, an upper temperature control mechanism 10c, an upper thermometer 11c, a lower temperature control mechanism 12c, and a lower thermometer 13c are arranged.

  In the source gas upstream portion 14, since the source gas is not consumed on the substrate 4 to be processed, the concentration of the source gas is high. Further, the susceptor 1 and the gas flow path forming member 7 are at a high temperature so that the temperature of the raw material gas is easily decomposed. In the region where the concentration of the source gas is high and the temperature is high, the source gas is likely to be thermally decomposed and vapor phase growth is likely to occur. Accordingly, by-products are easily generated in the raw material gas upstream portion 14.

  Here, the property (ease of peeling) of the by-product generated varies depending on the concentration of the source gas, the temperature at which the source gas reacts, and the property of the member. In the vapor phase growth apparatus according to the present embodiment, the concentration of the source gas varies in the vertical direction of the gas flow path. The materials of the susceptor 1 and the gas flow path forming member 7 are different. For this reason, it is preferable to control the susceptor 1 and the gas flow path forming member 7 to different temperatures also in the source gas upstream portion 14.

  Due to the flow of the raw material gas, foreign substances are likely to flow from upstream to downstream. Therefore, by measuring the temperature of the susceptor 1 and the gas flow path forming member 7 and controlling the temperature, peeling of by-products is suppressed, and the foreign substances are processed substrates. 4 can be effectively prevented.

  In the case of cooling the susceptor 1 and the gas flow path forming member 7, if the source gas upstream portion 14 is cooled too much, there arises a problem that the temperature at which the substrate 4 is thermally decomposed cannot be reached. Therefore, in the source gas upstream portion 14, it is necessary to adjust the temperatures of the susceptor 1 and the gas flow path forming member 7 so that the source gas can be thermally decomposed when the source gas reaches the substrate 4 to be processed.

  The source gas that has passed through the source gas upstream portion 14 reaches the substrate portion 15 to be processed. In the substrate portion 15 to be processed, most of the source gas is consumed for forming the crystal film on the substrate 4 to be processed, so that the concentration of the source gas is drastically reduced as compared with the upstream portion 14 of the source gas. . In addition, the concentration of the source gas varies in the vertical direction of the gas flow path.

  Since the ease of peeling of the by-product varies depending on the concentration of the raw material gas, it is preferable to set the temperatures of the susceptor 1 and the gas flow path forming member 7 to a temperature different from that of the raw material gas upstream portion 14.

  For example, the temperature of the gas flow path forming member 7 is controlled to 842-846 ° C. by the upper temperature control mechanism 10b. On the other hand, the temperature of the susceptor 1 is controlled to 1108 to 1113 ° C. by the lower temperature control mechanism 12b so that the source gas can be thermally decomposed on the substrate 4 to be processed.

  The source gas that has passed through the target substrate portion 15 reaches the source gas downstream portion 16. In the raw material gas downstream portion 16, since the raw material gas is consumed in the processed substrate portion 15, the concentration of the raw material gas is further reduced as compared with the processed substrate portion 15. Moreover, since it is away from the heater 2 and close to the gas exhaust port 8, the temperatures of the source gas, the susceptor 1 and the gas flow path forming member 7 are likely to be lowered. In addition, the concentration of the source gas varies in the vertical direction of the gas flow path.

  Since the ease of peeling of the by-product varies depending on the concentration of the raw material gas and the temperature at which the raw material gas reacts, the temperature of the susceptor 1 and the gas flow path forming member 7 is set to the upstream portion of the raw material gas at the raw material gas downstream portion 16. 14 and the substrate portion 15 to be processed are preferably set to different temperatures.

  In this way, in the regions where the concentrations of the raw material gases are different, the temperature is independently controlled by the upper temperature control mechanisms 10a to 10c and the lower temperature control mechanisms 12a to 12c, so that by-products are individually produced for each region. Can be prevented.

  In the raw material gas upstream portion 14, unheated raw material gas is introduced from the gas introduction port 5, whereas in the processed substrate portion 15 and the raw material gas downstream portion 16, the material gas is sufficiently heated and the temperature rises. Source gas flows. For this reason, in the upstream part 14 of raw material gas, the calorie | heat amount for heating up raw material gas to the temperature which is easy to thermally decompose is required. Therefore, the heater capability of the upper temperature control mechanism 10a is preferably larger than the heater capabilities of the upper temperature control mechanism 10b and the upper temperature control mechanism 10c. That is, the width of the upper temperature control mechanism 10a is preferably larger than the width of the upper temperature control mechanism 10b and the width of the upper temperature control mechanism 10c.

  Similarly, the heater capability of the lower temperature control mechanism 12a is preferably larger than the heater capabilities of the lower temperature control mechanism 12b and the lower temperature control mechanism 12c. That is, the width of the lower temperature control mechanism 12a is preferably larger than the width of the lower temperature control mechanism 12b and the width of the upper temperature control mechanism 12c.

  When the upper temperature control mechanisms 10a to 10c and the lower temperature control mechanisms 12a to 12c are in direct contact with the source gas, the upper temperature control mechanisms 10a to 10c and the lower temperature control mechanisms 12a to 12c are directly affected by the source gas. Temperature unevenness may occur. If temperature unevenness occurs in the raw material gas, the film thickness of the film formed on the substrate to be processed 4 becomes non-uniform, so that the partial temperature control mechanisms 10a to 10c and the lower temperature control mechanisms 12a to 12c are separated from the gas flow path. It is preferable to arrange at a different position. The upper temperature control mechanisms 10 a to 10 c and the lower temperature control mechanisms 12 a to 12 c may be embedded in the gas flow path forming member 7 and the susceptor 1 as long as they are separated from the gas flow path.

  Next, the relationship between the temperature of the susceptor and the gas flow path forming material and foreign matters will be described. Regarding the number of foreign matters on the substrate to be processed, the crystal film formed on the substrate to be processed is irradiated with a laser, and the number of foreign matters is measured from the reflection intensity.

  FIG. 6 is a graph showing the relationship between the temperature of the susceptor and the number of foreign substances on the substrate to be processed. The vertical axis of the graph is the number of foreign matters on the substrate 4 to be processed, and the horizontal axis is the temperature of the susceptor 1. About the temperature of the susceptor 1, the result measured in the to-be-processed substrate part 15 is shown.

  Here, the lower the temperature of the susceptor 1, the smaller the number of foreign matters on the substrate to be processed 4, and the higher the temperature of the susceptor 1, the larger the number of foreign matters on the substrate to be processed 4. For example, the number of foreign matters on the substrate to be processed 4 when the temperature of the susceptor 1 is about 1113 ° C. is about 3550, whereas the number of foreign matters on the substrate 4 to be processed when the temperature of the susceptor 1 is about 1119 ° C. , 6650. The number of foreign matters on the substrate to be processed 4 is greatly increased only by increasing the temperature of the susceptor by 5 ° C.

  FIG. 7 is a graph showing the relationship between the temperature of the gas flow path forming member and the number of foreign substances on the substrate to be processed. The vertical axis of the graph is the number of foreign substances on the substrate 4 to be processed, and the horizontal axis is the temperature of the gas flow path forming member 7. About the temperature of the gas flow path formation member 7, the result measured in the to-be-processed substrate part 15 is shown.

  Here, the lower the temperature of the gas flow path forming member 7, the smaller the number of foreign substances on the substrate 4 to be processed, and the higher the temperature of the gas flow path forming member 7, the greater the number of foreign substances. For example, when the temperature of the gas flow path forming member 7 is about 846 ° C., the number of foreign matters on the substrate 4 to be processed is about 3550, whereas the temperature of the gas flow path forming member 7 is about 849 ° C. The number of foreign matters on the substrate 4 is about 6650. The number of foreign matters on the substrate to be processed 4 is greatly increased only by raising the temperature of the gas flow path forming member 7 by only 3 ° C.

  As described above, since the number of foreign matters greatly increases with a slight increase in temperature, it is preferable that the upper temperature control mechanisms 10a to 10c and the lower temperature control mechanisms 12a to 12c can be independently and precisely controlled. .

  While appropriately changing the widths of the upper temperature control mechanisms 10a to 10c and the widths of the lower temperature control mechanisms 12a to 12c according to the environment of the source gas upstream portion 14, the substrate portion 15 to be processed, and the source gas downstream portion 16, By increasing the number of the upper temperature control mechanism, the lower temperature control mechanism, the upper thermometer, and the lower thermometer, the amount of heat transmitted to the susceptor 1 and the gas flow path forming member 7 can be appropriately changed, and the susceptor 1 and the gas flow path formation The range in which the temperature of the member 7 can be measured and controlled can be increased, and precise temperature control becomes possible.

  By appropriately controlling the temperatures of the susceptor 1 and the gas flow path forming member 7 as described above, it is possible to suppress the generation of foreign matter adhering to the substrate 4 to be processed and the peeling of the foreign matter.

  In the present embodiment, the upper temperature control mechanisms 10a to 10c and the lower temperature control mechanisms 12a to 12c have been described as having heaters. However, the present invention is not limited to heaters, and cooling water is allowed to flow through cooling pipes, It may be a temperature control mechanism that controls the temperature by controlling the flow rate, or the cooling gas is allowed to flow through the susceptor 1 or the gas flow path forming member 7, and the temperature is controlled by controlling the type and flow rate of the gas. A temperature control mechanism may be used.

  In the present embodiment, it has been described that the upper temperature control mechanisms 10a to 10c and the lower temperature control mechanisms 12a to 12c are independently controlled to different temperatures, but the output values of a plurality of heaters may be the same. The temperature may be controlled by one heater. In such a configuration, by arranging at least two thermometers on the upstream side and the downstream side, a temperature abnormality can be detected at an early stage as compared with the case where one thermometer is installed.

  Furthermore, in the present embodiment, the upper temperature control mechanisms 10a to 10c and the lower temperature control mechanisms 12a to 12c are not necessarily required, and only the upper temperature control mechanisms 10a to 10c may be provided. Only the control mechanisms 12a to 12c may be provided.

  Although the embodiments of the present invention have been described above, the embodiments disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  Reference Signs List 1 susceptor, 2 heater, 3 substrate holding member, 4 substrate to be processed, 5 gas inlet, 6 reaction chamber, 7 gas flow path forming member, 8 gas exhaust port, 9 rotating shaft, 10a to 10c upper temperature control mechanism, 11a -11c Upper thermometer, 12a-12c Lower temperature control mechanism, 13a-13c Lower thermometer, 14 Raw material gas upstream part, 15 Processed substrate part, 16 Raw material gas downstream part.

Claims (8)

A vapor phase growth apparatus for performing vapor phase growth by flowing a source gas through a gas flow path on a substrate to be processed and heating the substrate to be processed.
A susceptor for holding the substrate to be processed;
A gas flow path forming member disposed to face the susceptor so as to constitute the gas flow path between the susceptor and
A plurality of thermometers provided on at least one of the susceptor and the gas flow path forming member,
The plurality of thermometers includes a first thermometer and a second thermometer provided downstream of the gas flow path with respect to the first thermometer.   The vapor phase growth apparatus according to claim 1, further comprising a temperature control mechanism that controls a temperature at a predetermined position in the gas flow path based on measurement results of the plurality of thermometers. The temperature control mechanism is
A first temperature control mechanism for controlling the temperature of the first position in the gas flow path based on the measurement result of the first thermometer;
A second temperature control mechanism for controlling the temperature of the second position downstream of the first position in the gas flow path based on the measurement result of the second thermometer,
The vapor phase growth apparatus according to claim 2, wherein the first temperature control mechanism and the second temperature control mechanism can control the temperatures of the first position and the second position independently of each other.   4. The vapor phase growth apparatus according to claim 3, wherein the plurality of temperature control mechanisms include a plurality of annular members arranged so as to have the same center. 5.   5. The vapor phase growth apparatus according to claim 2, wherein the temperature control mechanism includes a temperature adjustment member disposed at a position separated from the gas flow path. Preparing a semiconductor substrate;
Holding the semiconductor substrate with a susceptor;
Flowing a source gas through a gas flow path formed on the susceptor;
The susceptor and gas by a plurality of thermometers including a first thermometer disposed upstream of the gas flow path and a second thermometer disposed downstream of the gas flow path with respect to the first thermometer. And a step of heating the semiconductor substrate with a heater through the susceptor while measuring the temperature of at least one of the flow path forming members.   The method for manufacturing a semiconductor device according to claim 6, further comprising a step of heating or cooling a predetermined position of the gas flow path based on measurement results of the plurality of thermometers.   The method for manufacturing a semiconductor device according to claim 7, wherein in the step of heating or cooling the predetermined position of the gas flow path, the temperatures of the first position and the second position in the gas flow path are adjusted independently of each other.

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