JP2006019583A - Method and device for heat treatment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and a device for heat treatment with a simple structure in which airtightness is well maintained for the entire device, frequency in maintenance for cleaning, re-assembling or the like is minimum, the temperature of a semiconductor substrate is precisely controlled, and quality of the semiconductor substrate is easily maintained for high yield in heat treatment. <P>SOLUTION: A reaction chamber 10 comprises a gas guiding inlet 4 for introducing reactive gas, a gas exhausting opening 5 for exhausting the reactive gas, and an infrared ray transmission window 16. The reaction chamber 10 comprises, in its interior, a susceptor 2 on which a semiconductor substrate 1 is placed. The reaction chamber 10 comprises, outside of it, a heating means 8 for heating the semiconductor substrate 1, a substrate temperature measuring means 11a which measures temperature of the semiconductor substrate 1 through the infrared ray transmission window 16, a reaction chamber cooling means 12 for cooling the entire reaction chamber 10, and a window cooling means 13 for cooling the infrared ray transmission window 16. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a heat treatment apparatus and a heat treatment method for introducing a predetermined reaction gas into a reaction chamber and performing a desired treatment on a semiconductor substrate, and more specifically, controlling the temperature of the semiconductor substrate with high accuracy and the quality of the semiconductor substrate. It is related with the heat processing apparatus and the heat processing method which can maintain easily and minimized the frequency of maintenance.

  As a heat treatment apparatus that performs a target process on a semiconductor substrate, a vapor phase growth apparatus, a CVD (Chemical Vapor Deposition) apparatus, a photoexcited CVD apparatus, a plasma CVD apparatus, and the like can be given. Here, for example, a vapor deposition apparatus includes a film forming apparatus that performs epitaxial growth on a semiconductor substrate such as a silicon semiconductor substrate. The apparatus introduces a source gas, which is a reactive gas, into a reaction chamber, where the vapor phase grows. A thin film is formed on a semiconductor substrate by performing a reaction and / or a chemical reaction.

  FIG. 3 is a schematic view showing an example of a film forming apparatus having a conventional reaction chamber. For example, in the reaction chamber 10 made of quartz glass, the semiconductor substrate 1 is placed on the susceptor 2 and rotated by the susceptor rotating mechanism 3. Then, in the process of introducing the reaction gas (source gas) from the gas inlet 4 into the reaction chamber 10 and being discharged from the gas outlet 5, the source gas (indicated by an arrow in the figure) passing through the surface of the semiconductor substrate 1 is obtained. A portion of the film (s) is chemically reacted on the surface to form a thin film that is deposited.

  In such a film formation process, reaction products generated by partial decomposition of the source gas are deposited and deposited on the inner surfaces of the reaction chamber upper wall 6 and the reaction chamber lower wall 7 provided in the reaction chamber 10. . The attached / deposited reaction product may be peeled off and attached as dust on the semiconductor substrate during film formation, thereby reducing film formation quality and yield in the film formation process.

  Therefore, the functional configuration of the reaction chamber (film formation chamber) has a double structure of an outer chamber and an inner chamber, and a film formation chamber that facilitates maintenance to remove adhesion and deposits necessary to maintain film quality. Is disclosed (for example, see Patent Document 1).

  On the other hand, in the conventional CVD apparatus described in Patent Document 2, for example, a semiconductor substrate is placed on a susceptor in a reaction chamber, and a reaction gas is supplied in a state heated to a predetermined temperature to form a film on the surface of the semiconductor substrate. Yes. In this case, the susceptor is heated from below by a heater or the like, and the semiconductor substrate placed thereon is heated. The temperature control of the susceptor is performed by a method in which a thermocouple is pressed against the susceptor, the temperature is measured, and the heater heat generation amount is adjusted so that this becomes a set temperature. At this time, in order to accurately measure the actual semiconductor substrate temperature, the dummy substrate temperature and the susceptor temperature are calibrated in advance using a dummy substrate with a thermocouple, and the actual semiconductor substrate temperature is estimated based on this result. Measures such as doing are taken.

  However, when a semiconductor substrate having a surface state different from that of the dummy substrate is processed, the temperature of the dummy substrate and the actual temperature of the actual semiconductor substrate may be greatly deviated from each other because the absorption rate and emissivity of the heat radiation are different. Further, it has been found that in the pressure range of 0.01 to 100 Torr that is most frequently used in the CVD process, the semiconductor substrate temperature varies depending on the pressure even if the susceptor temperature is constant.

  Such a problem can be solved by directly measuring the temperature of the semiconductor substrate using a radiation thermometer. One method of measuring the temperature of a semiconductor substrate using a radiation thermometer is a method of measuring the temperature from the outside through an infrared transmission window provided in the upper part of the reaction chamber.

  In this case, since the infrared transmission window is exposed to the reaction gas, the reaction product adheres and accumulates inside the window, the window becomes cloudy, and the infrared transmittance decreases with time. As a result, the infrared intensity measured by the radiation thermometer gradually decreases, and the measured temperature becomes lower than the actual substrate temperature. On the other hand, a structure has been devised in which inert gas is blown from the periphery of the window on the inside of the reaction chamber so that the reaction gas does not touch the infrared transmission window to prevent adhesion and deposition of reaction products. However, this method has a problem that the flow of the inert gas affects the flow of the reaction gas and the uniformity of film formation is impaired. Furthermore, the structure of the apparatus becomes complicated in order to supply the inert gas, and the inert gas must always be flowed during the film formation, so that the amount of gas consumption increases.

Therefore, the reaction chamber is configured to measure the wafer through a reaction gas supply head provided facing the semiconductor substrate, a reaction gas introduction port provided in the reaction gas supply head, and a hole in the reaction gas introduction port. It is assumed that the reaction product adheres to the infrared transmission window by having at least one radiation thermometer arranged and an infrared transmission window provided between the radiation thermometer and the reaction gas supply head. A technique for preventing it by itself is disclosed (Patent Document 2).
However, such an apparatus also has a very complicated configuration, and there is a possibility that the reaction gas may be contaminated, which may cause a problem that the quality of the formed film is deteriorated.

JP 2002-246314 A Japanese Patent Laid-Open No. 06-204143

  The object of the present invention is to maintain a good airtightness of the entire apparatus with a simpler structure, to minimize the frequency of maintenance such as cleaning and reassembly, and to reduce the temperature of the semiconductor substrate. An object of the present invention is to provide a heat treatment apparatus and a heat treatment method that can be controlled with high accuracy, can easily maintain the quality of a semiconductor substrate, and can achieve high yield in heat treatment.

  To achieve the above object, the present invention is an apparatus for heat-treating a semiconductor substrate in a reaction chamber, and at least the reaction chamber has a gas inlet for introducing a reactive gas and a gas outlet for discharging the reactive gas. An infrared transmission window is provided, and a susceptor for placing a semiconductor substrate is provided inside the reaction chamber, and heating means for heating the semiconductor substrate is provided outside the reaction chamber, and the semiconductor substrate is interposed via the infrared transmission window. A heat treatment apparatus comprising: a substrate temperature measuring means for measuring the temperature of the substrate; a reaction chamber cooling means for cooling the entire reaction chamber; and a window cooling means for cooling the infrared transmission window. (Claim 1).

  In this way, if the heat treatment apparatus is equipped with a window cooling means in addition to the reaction chamber cooling means outside the reaction chamber, an infrared transmission window is provided from the outside of the reaction chamber while maintaining good airtightness of the entire apparatus. It is possible to cool effectively and prevent the reaction product from adhering to and depositing on the reaction chamber side of the window. Therefore, by controlling the temperature of the semiconductor substrate with high precision, for example, the quality of the semiconductor substrate can be easily maintained even during a long-time or high-temperature heat treatment, and no contamination or crystal defects due to reaction products occur, with a high yield. A heat treatment apparatus capable of heat treatment can be obtained. In addition, the frequency of maintenance such as cleaning and reassembly can be minimized.

In this case, it is preferable that outside the reaction chamber is provided with a window temperature measuring means for measuring the temperature of the infrared transmission window and / or a susceptor temperature measuring means for measuring the temperature of the susceptor. .
Thus, if the window temperature measuring means is provided outside the reaction chamber, the temperature of the window to be cooled can be accurately measured. For example, the window cooling means is controlled by the measurement result of the window temperature to ensure the The window temperature can prevent the adhesion and deposition of reaction products. If the susceptor temperature measuring means is provided, the susceptor temperature on which the semiconductor substrate is placed can be accurately measured, and by performing this together with the substrate temperature measurement, the temperature of the semiconductor substrate can be controlled more accurately. Will be able to.

The infrared transmission window is preferably made of quartz glass.
Thus, if the infrared transmission window is made of quartz glass, the infrared transmittance is high, the semiconductor substrate in the reaction chamber can be efficiently heated from the outside of the reaction chamber, and temperature measurement and temperature control can be performed with high accuracy.

The heating means is preferably a lamp heater.
Thus, if the heating means is a lamp heater, the semiconductor substrate can be easily heated from the outside through the infrared transmission window.

Moreover, it is preferable that each said temperature measurement means is a radiation thermometer (Claim 5).
Thus, if the temperature measuring means for measuring the temperature of the semiconductor substrate, window, susceptor, etc. is a radiation thermometer, the temperature can be easily measured from the outside through the infrared transmission window, and the temperature of the semiconductor substrate can be more accurately determined. Can be detected.

Moreover, it is preferable that the said window cooling means sprays the cooling fluid which does not react with the said infrared rays transmission window from a nozzle (Claim 6).
Thus, if the window cooling means blows a cooling fluid that does not react with the infrared transmission window from the nozzle, the infrared transmission window reacts with the cooling fluid and deteriorates, or a reaction product of the cooling fluid. Therefore, the temperature of the semiconductor substrate can be accurately detected over a longer period of time, and the quality of the semiconductor substrate can be maintained. Further, since the cooling fluid is sprayed by the nozzle in this way, only the necessary portion of the window can be intensively and efficiently cooled.

The cooling fluid is preferably air, nitrogen gas, or argon gas.
In this way, if the cooling fluid is air, nitrogen gas, or argon gas, it is easy to handle and does not react with the infrared transmission window at all. Thus, the temperature of the semiconductor substrate can be reliably detected over a long period of time.

Moreover, it is preferable that the said window cooling means sprays the said cooling fluid with the pressure of at least 0.1 kg / cm < ² > (Claim 8).
Thus, if the window cooling means sprays the cooling fluid at a pressure of at least 0.1 kg / cm ² , there is a sufficient cooling effect, and the reaction product adheres to the reaction chamber side of the infrared transmission window. Accumulation can be reliably prevented.
Note that if the maximum pressure of the cooling fluid is 5 kg / cm ² , the cooling means will not be large, and even if a higher pressure is applied, reaction products will not adhere or accumulate. This is sufficient because the effect of doing so is not significantly improved.

Moreover, it is preferable that the nozzle of the said window cooling means is an annular shape, and is provided with an outlet on the inner peripheral side so as to spray the cooling fluid inward from the outer peripheral portion of the infrared transmitting window. (Claim 9).
Thus, if the nozzle of the window cooling means has an annular shape and has a blowout port on the inner peripheral side so as to spray the cooling fluid inward from the outer peripheral portion of the infrared transmission window, the reaction chamber exterior Therefore, heating and temperature measurement / control are not hindered, and the semiconductor substrate can be efficiently heated without interfering with the heating means and substrate temperature measuring means in the chamber and the semiconductor substrate placed on the susceptor inside the reaction chamber. The temperature can be controlled with high accuracy. And if it has such a blower outlet, an infrared rays transmission window can be cooled uniformly and efficiently.

  The present invention is also a method for heat-treating a semiconductor substrate in a reaction chamber, wherein the semiconductor substrate is placed on a susceptor disposed in the reaction chamber, and the reaction is cooled by a reaction chamber cooling means provided outside the reaction chamber. The whole chamber is cooled and heated from the outside by the heating means outside the reaction chamber while the temperature of the semiconductor substrate is measured by the substrate temperature measuring means outside the reaction chamber through the infrared transmission window provided in the reaction chamber. While the substrate temperature is controlled and at least the reaction gas is introduced from the gas inlet of the reaction chamber, the infrared transmission window is cooled from the outside by a window cooling means provided outside the reaction chamber, and heat treatment is performed. A heat treatment method is provided (claim 10).

In this way, the semiconductor substrate is placed on the susceptor arranged in the reaction chamber, and the entire reaction chamber is cooled by the reaction chamber cooling means provided outside the reaction chamber, and separately from this, at least the gas in the reaction chamber While the reaction gas is introduced from the inlet, if the infrared transmission window is cooled from the outside by the window cooling means provided outside the reaction chamber and the heat treatment is performed, the airtightness of the entire apparatus is kept good. It is possible to effectively cool the infrared transmission window from the outside of the reaction chamber, and to prevent the reaction product from adhering to and depositing on the reaction chamber side of the window.
As described above, since the reaction product does not adhere to or accumulate on the infrared transmission window, the reaction product is not peeled off or dropped from the infrared transmission window immediately above the semiconductor substrate to contaminate the semiconductor substrate. Crystal defects can be prevented from occurring on the surface.
Therefore, by controlling the temperature of the semiconductor substrate with high accuracy, it is possible to easily maintain the quality of the semiconductor substrate even for long-time or high-temperature heat treatment, for example, without causing contamination by reaction products and crystal defects, and at a high yield. Heat treatment is possible.

In this case, during the heat treatment, it is preferable to perform temperature control while measuring the temperature of the infrared transmission window and / or the susceptor by the window temperature measuring means and / or the susceptor temperature measuring means outside the reaction chamber ( Claim 11).
As described above, during the heat treatment, if the temperature control is performed while the temperature of the infrared transmission window and / or the susceptor is also measured by the window temperature measuring means and / or the susceptor temperature measuring means, the window cooling means is determined by the measurement result of the window temperature. The window temperature can be controlled so as to surely prevent the reaction product from adhering or accumulating. Further, by performing the susceptor temperature measurement together with the substrate temperature measurement, the temperature of the semiconductor substrate can be controlled with higher accuracy.

The semiconductor substrate is preferably made of silicon.
As described above, when a semiconductor substrate made of silicon is used, a mainstream silicon substrate for a semiconductor integrated circuit can be heat-treated at a high yield while preventing contamination by reaction products and generation of crystal defects.

The heat treatment is preferably a vapor deposition process on the main surface of the semiconductor substrate.
As described above, if the heat treatment is a process for performing vapor phase growth on the main surface of the semiconductor substrate, for example, a long time or high temperature heat treatment is required to form a thick vapor phase growth film. However, it is easy to form a film while maintaining the quality, and it is possible to prevent the occurrence of contamination and crystal defects due to reaction products, and to perform vapor phase growth processing at a high yield.

  According to the present invention, the infrared transmission window can be effectively cooled from the outside of the reaction chamber while keeping the airtightness of the entire heat treatment apparatus good, and the reaction product adheres to the reaction chamber side of the window. Accumulation can be prevented. Therefore, by controlling the temperature of the semiconductor substrate accurately, for example, the quality of the semiconductor substrate can be easily maintained even during long-time or high-temperature heat treatment, and contamination and crystal defects due to reaction products do not occur, resulting in high yield. A heat treatment apparatus or a heat treatment method capable of performing heat treatment can be obtained. Further, the heat treatment apparatus can minimize the frequency of maintenance such as cleaning and reassembly.

Hereinafter, the present invention will be described in detail.
In order to cope with the problem of reaction products adhering to and depositing on the reaction chamber wall, which has existed in conventional heat treatment apparatuses such as film forming apparatuses and CVD apparatuses, a technique such as Patent Document 1 or 2 is disclosed. Has been.
However, since the technique disclosed in Patent Document 1 does not prevent the adhesion and deposition of reaction products, regular maintenance is required.
Furthermore, the technique disclosed in any document is not a fundamental solution because it is a modification of the internal structure of the reaction chamber.
In other words, each of the techniques makes the reaction chamber a double structure. However, in this case, the apparatus becomes complicated, and this increases the cost for improving the structural accuracy. In addition, since it has a double structure, the airtightness of the reaction chamber may be reduced.

On the other hand, if the heat treatment apparatus has a window cooling means dedicated to the infrared transmission window outside the reaction chamber, the infrared transmission window can be effectively extended from the outside of the reaction chamber while maintaining the airtightness of the entire apparatus. The cooling can be performed, and the reaction product can be prevented from adhering and depositing on the reaction chamber side of the window. Therefore, in order to minimize the frequency of maintenance of the apparatus and to control the temperature of the semiconductor substrate with high precision to form a thick epitaxial film, for example, and to increase the deposition rate. Even when heat treatment is required to be performed at a high temperature, the quality of the semiconductor substrate can be easily maintained, and the heat treatment apparatus capable of performing heat treatment at a high yield without causing contamination or crystal defects due to reaction products on the semiconductor substrate. . The present inventors have conceived the above and completed the present invention.
Hereinafter, embodiments of the present invention will be described in detail, but the present invention is not limited thereto.

FIG. 1 is a schematic view showing an example of an embodiment of a heat treatment apparatus according to the present invention.
The reaction chamber 10 made of, for example, quartz glass of the heat treatment apparatus 20 has a gas introduction port 4 for introducing a reaction gas and a gas discharge port 5 for discharging the reaction gas, and an infrared transmission window 16 made of, for example, quartz glass. The reaction chamber 10 includes a susceptor 2 on which a semiconductor substrate 1 made of, for example, silicon is placed. Outside the reaction chamber 10, a heating unit 8 such as a lamp heater for heating the semiconductor substrate 1, a reflector 9 made of, for example, aluminum that reflects light from the heating unit 8 to increase heating efficiency, and an infrared transmission window 16. A substrate temperature measuring means 11a such as a radiation thermometer, for example, a reaction chamber cooling means 12 such as a blower for blowing air for cooling the entire reaction chamber 10, and infrared rays. A window cooling means 13 for cooling the transmission window 16 is provided. Furthermore, it is preferable that a window temperature measuring unit 11b such as a radiation thermometer and a susceptor temperature measuring unit 11c are provided outside the reaction chamber 10, for example.

The infrared transmission window 16 is preferably made of quartz glass, since it has a high infrared transmittance. However, the infrared transmission window 16 is not limited to quartz glass, and any infrared transmission window may be used.
The heating means 8 is preferably a lamp heater because it can be easily heated, but is not particularly limited as long as it can be heated by infrared rays through an infrared transmission window. The installation position of the heating means is preferably installed above and below the reaction chamber 10 in order to uniformly heat the semiconductor substrate.
Each of the temperature measuring means 11a, 11b, and 11c is preferably a radiation thermometer because it can easily measure the temperature from the outside. For example, a thermal camera using a CCD camera or the like can also be used. Regarding the position of each temperature measurement means, the substrate temperature measurement means 11a is installed above the infrared transmission window 16, the window temperature measurement means 11b is installed obliquely above the infrared transmission window 16, and the susceptor temperature measurement means 11c is installed below the reaction chamber. However, there is no particular limitation as long as the temperature can be accurately measured and the position does not interfere with the heating means or the like.

The reaction chamber cooling means 12 can be a blower that blows air into the apparatus, but is not particularly limited as long as it can cool the entire reaction chamber 10.
If the window cooling means 13 blows the cooling fluid which does not react with the infrared transmitting window 16 from the nozzle, the infrared transmitting window 16 reacts with the cooling fluid and deteriorates, or the reaction product of the cooling fluid is Since there is no adhesion / deposition on the window 16, the temperature of the semiconductor substrate can be detected accurately over a longer period of time. Further, since the cooling fluid is sprayed by the nozzle in this way, only the necessary portion of the window 16 can be intensively and efficiently cooled.

  FIG. 2 is a schematic view showing a cooling ring nozzle as an example of an embodiment of the window cooling means. The cooling ring nozzle 14 includes an annular ring portion 14a and a plurality of outlets 14b. The outlet 14b is provided on the inner peripheral side of the ring portion 14a so that the cooling gas supplied from the cooling gas supply pipe 15 to the ring portion 14a is blown inward from the outer peripheral portion of the infrared transmission window 16. In this way, it is possible to cool the window 16 uniformly and efficiently without hindering heating or temperature measurement from the outside of the reaction chamber. The outlets 14b are preferably arranged at equal intervals in the ring portion 14a, and the number thereof is, for example, about 3 to 24. Further, the cooling gas supply pipe 15 may be provided only at one place, but may be provided at two or more places on the ring portion 14a in order to uniformly cool the cooling gas by blowing it out from each outlet. Further, if a balance valve (not shown) is attached to the supply pipe, the cooling gas can be stably and uniformly blown by adjusting the flow rate of the blown gas to an appropriate amount. Moreover, if a blower outlet can change the direction and the angle with respect to a window freely, a cooling effect can be heightened more by changing a spraying direction and an angle as needed.

If the cooling fluid is air, nitrogen gas, or argon gas, it is easy to handle and does not react with the infrared transmission window at all. Can be detected well.
Further, if the window cooling means sprays the cooling fluid at a pressure of at least 0.1 to 5 kg / cm ² , there is a sufficient cooling effect, and the reaction product adheres to the reaction chamber side of the infrared transmission window. It is preferable because accumulation can be surely prevented and the cooling means does not become large.

Next, a method for heat treatment of a semiconductor substrate using the apparatus as shown in FIG. 1 will be described.
First, the semiconductor substrate 1 is placed on the susceptor 2 disposed in the reaction chamber 10. The semiconductor substrate 1 is not particularly limited, but may be a silicon single crystal substrate or the like. The use of such a silicon substrate is preferable because a mainstream silicon substrate for a semiconductor integrated circuit can be heat-treated at a high yield while preventing contamination by reaction products and generation of crystal defects.

Next, the whole reaction chamber 10 is cooled by the reaction chamber cooling means 12 and heated from the outside by the heating means 8 while measuring the temperature of the semiconductor substrate 1 by the substrate temperature measuring means 11 a through the infrared transmission window 16. Control the substrate temperature. In this control, for example, the output of the heating means 8 is adjusted so that the measured substrate temperature matches the set substrate temperature.
At this time, if the temperature control is performed while the temperature of the infrared transmitting window 16 and the susceptor 2 is also measured by the window temperature measuring unit 11b and the susceptor temperature measuring unit 11c, the window cooling unit 13 is controlled by the measurement result of the window temperature to ensure In particular, the window temperature can be set such that adhesion and deposition of reaction products can be prevented. Further, it is preferable to perform the susceptor temperature measurement together with the substrate temperature measurement because the temperature of the semiconductor substrate 1 can be controlled with higher accuracy. In the embodiment shown in FIG. 1, the susceptor temperature measuring means 11c measures the temperature via the reaction chamber lower wall 7 made of, for example, quartz glass. During the heat treatment, the reaction gas passes above the semiconductor substrate 1 in the reaction chamber 10, and therefore hardly contacts the reaction chamber lower wall 7. Accordingly, the adhesion and deposition of the reaction product on the lower wall 7 of the reaction chamber can be sufficiently prevented only by the cooling by the reaction chamber cooling means 12, so that accurate susceptor temperature measurement can be performed.

  Then, a predetermined reaction gas is introduced from the gas introduction port 4 and discharged from the gas discharge port 5. At least during the introduction of the reaction gas, the infrared transmission window 16 is cooled from the outside by the window cooling means 13. Then, heat treatment is performed. In this way, the reaction chamber cooling means 12 cools the entire reaction chamber 10 and the window cooling means 13 individually and effectively cools the infrared transmission window 16 from the outside of the reaction chamber. Adhesion / deposition of reaction products on can be prevented.

In this way, reaction products do not adhere to or accumulate on the infrared transmission window, so that the reaction products do not peel off or fall from the window directly above the semiconductor substrate to contaminate the semiconductor substrate, and the surface of the semiconductor substrate is not affected during the reaction. Generation of crystal defects can be prevented. In addition, the temperature of the substrate measured through the window can be accurately measured.
Therefore, the temperature of the semiconductor substrate can be accurately controlled to easily maintain the quality of the semiconductor substrate, and the heat treatment can be performed at a high yield without causing contamination or crystal defects due to reaction products.
In particular, the heat treatment method of the present invention can maintain substrate quality with high accuracy and substrate quality without contamination and crystal defects over a long period of time, so a thick film having a thickness of about 10 to 100 μm that requires a long treatment time at a high temperature. This is particularly effective when performing vapor phase growth.

Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples, but the present invention is not limited to these examples.
(Example 1, Comparative Example 1)
As an example of the present invention, a silicon single crystal layer was epitaxially grown for about 900 seconds by vapor phase growth on the main surface of a silicon single crystal substrate having a diameter of 200 mm using the heat treatment apparatus of FIG. SiHCl ₃ was used as a reaction gas, the substrate temperature was controlled at 1130 ° C., and the growth film thickness was 60 μm. Vapor phase growth was performed while air was blown at a pressure of 1 kg / cm ² using the ring nozzle of FIG. 2 in which air was used for cooling the infrared transmission window made of quartz glass and 12 outlets were installed at equal intervals. In order to confirm the cooling effect, the temperature of the quartz glass window was also measured.
As a comparative example, vapor phase growth was performed under the same conditions as in the example except that air was not blown by the ring nozzle.

  As a result, in the case of the comparative example in which air was not blown, the temperature of the window reached approximately 450 ° C., and fogging was observed on the window due to adhesion of the reaction product. On the other hand, when the cooling gas was sprayed, the temperature of the window was suppressed to about 400 ° C., and the window was not fogged.

  The present invention is not limited to the above embodiment. The above embodiment is merely an example, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same operational effects. It is included in the technical idea of the invention.

It is the schematic which shows an example of embodiment of the heat processing apparatus which concerns on this invention. It is the schematic which shows the cooling ring nozzle which is an example of embodiment of the window cooling means which concerns on this invention. It is the schematic which shows an example of the film-forming apparatus provided with the conventional reaction chamber.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 2 ... Susceptor, 3 ... Susceptor rotation mechanism, 4 ... Gas inlet,
5 ... Gas outlet, 6 ... Upper wall of film formation chamber, 7 ... Lower wall of film formation chamber (reaction chamber), 8 ... Heating means,
9 ... reflector, 10 ... reaction chamber, 11a ... substrate temperature measuring means,
11b ... Window temperature measuring means, 11c ... Susceptor temperature measuring means,
12 ... Reaction chamber cooling means, 13 ... Window cooling means, 14 ... Cooling ring nozzle,
14a ... ring part, 14b ... outlet, 15 ... cooling gas supply pipe,
16 ... Infrared transmitting window, 20 ... Heat treatment apparatus.

Claims (13)

  An apparatus for heat-treating a semiconductor substrate in a reaction chamber, wherein at least the reaction chamber has a gas introduction port for introducing a reaction gas and a gas discharge port for discharging the reaction gas, and includes an infrared transmission window. Comprises a susceptor for placing a semiconductor substrate, and outside the reaction chamber, a heating means for heating the semiconductor substrate, and a substrate temperature measuring means for measuring the temperature of the semiconductor substrate through the infrared transmission window, A heat treatment apparatus comprising: a reaction chamber cooling means for cooling the entire reaction chamber; and a window cooling means for cooling the infrared transmission window.   2. The apparatus according to claim 1, further comprising a window temperature measuring unit that measures the temperature of the infrared transmission window and / or a susceptor temperature measuring unit that measures the temperature of the susceptor outside the reaction chamber. Heat treatment device.   The heat treatment apparatus according to claim 1, wherein the infrared transmission window is made of quartz glass.   The heat treatment apparatus according to claim 1, wherein the heating unit is a lamp heater.   5. The heat treatment apparatus according to claim 1, wherein each of the temperature measuring means is a radiation thermometer.   The said window cooling means sprays the cooling fluid which does not react with the said infrared permeable window from a nozzle, The heat processing apparatus of any one of Claim 1 thru | or 5 characterized by the above-mentioned.   The heat treatment apparatus according to claim 1, wherein the cooling fluid is any one of air, nitrogen gas, and argon gas. The heat treatment apparatus according to claim 1, wherein the window cooling unit sprays the cooling fluid at a pressure of at least 0.1 kg / cm ² .   The nozzle of the window cooling means has an annular shape, and has a blowout port on the inner peripheral side so as to spray the cooling fluid inward from the outer peripheral portion of the infrared transmitting window. The heat processing apparatus of any one of Claim 1 thru | or 8.   A method for heat-treating a semiconductor substrate in a reaction chamber, wherein the semiconductor substrate is placed on a susceptor disposed in the reaction chamber, and the entire reaction chamber is cooled by a reaction chamber cooling means provided outside the reaction chamber, While measuring the temperature of the semiconductor substrate by the substrate temperature measuring means outside the reaction chamber through the infrared transmission window provided in the reaction chamber, the substrate temperature is controlled by heating from the outside by the heating means outside the reaction chamber, And at least during the introduction of the reaction gas from the gas inlet of the reaction chamber, the infrared transmission window is cooled from the outside by a window cooling means provided outside the reaction chamber, and heat treatment is performed. Heat treatment method.   The temperature control is performed while the temperature of the infrared transmission window and / or the susceptor is also measured by the window temperature measuring means and / or the susceptor temperature measuring means outside the reaction chamber during the heat treatment. The heat treatment method according to 10.   The heat treatment method according to claim 10 or 11, wherein the semiconductor substrate is made of silicon.   The heat treatment method according to any one of claims 10 to 12, wherein the heat treatment is a treatment for performing vapor phase growth on a main surface of the semiconductor substrate.

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