JP2014006902A5 - - Google Patents

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Publication number
JP2014006902A5
JP2014006902A5 JP2013127611A JP2013127611A JP2014006902A5 JP 2014006902 A5 JP2014006902 A5 JP 2014006902A5 JP 2013127611 A JP2013127611 A JP 2013127611A JP 2013127611 A JP2013127611 A JP 2013127611A JP 2014006902 A5 JP2014006902 A5 JP 2014006902A5
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JP
Japan
Prior art keywords
address
data
location
ram
nvm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013127611A
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English (en)
Japanese (ja)
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JP2014006902A (ja
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Publication date
Priority claimed from US13/530,169 external-priority patent/US20130346680A1/en
Application filed filed Critical
Publication of JP2014006902A publication Critical patent/JP2014006902A/ja
Publication of JP2014006902A5 publication Critical patent/JP2014006902A5/ja
Pending legal-status Critical Current

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JP2013127611A 2012-06-22 2013-06-18 フラッシュメモリ内に記憶されるデータのためのアドレスｒａｍを有するエミュレート電気的消去可能メモリ Pending JP2014006902A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/530,169 US20130346680A1 (en) 2012-06-22 2012-06-22 Emulated electrically erasable memory having an address ram for data stored in flash memory
US13/530,169 2012-06-22

Publications (2)

Publication Number Publication Date
JP2014006902A JP2014006902A (ja) 2014-01-16
JP2014006902A5 true JP2014006902A5 (https=) 2016-08-04

Family

ID=49775424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013127611A Pending JP2014006902A (ja) 2012-06-22 2013-06-18 フラッシュメモリ内に記憶されるデータのためのアドレスｒａｍを有するエミュレート電気的消去可能メモリ

Country Status (3)

Country Link
US (1) US20130346680A1 (https=)
JP (1) JP2014006902A (https=)
CN (1) CN103514953B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9563491B2 (en) * 2014-09-12 2017-02-07 Nxp Usa, Inc. High voltage failure recovery for emulated electrically erasable (EEE) memory system
US9996458B1 (en) * 2017-07-12 2018-06-12 Nxp Usa, Inc. Memory sector retirement in a non-volatile memory

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06150673A (ja) * 1992-11-12 1994-05-31 Casio Electron Mfg Co Ltd 不揮発メモリのアクセス制御装置
US7130958B2 (en) * 2003-12-02 2006-10-31 Super Talent Electronics, Inc. Serial interface to flash-memory chip using PCI-express-like packets and packed data for partial-page writes
JP4439096B2 (ja) * 2000-08-28 2010-03-24 株式会社東芝 メモリカード及び同カードに適用されるアドレス変換方法
TWI282140B (en) * 2005-11-10 2007-06-01 Realtek Semiconductor Corp Display controller and method for updating parameters of the same
JP2007199828A (ja) * 2006-01-24 2007-08-09 Matsushita Electric Ind Co Ltd 不揮発性記憶装置およびそのアドレス管理方法
JP2008287398A (ja) * 2007-05-16 2008-11-27 Toshiba Corp 主記憶装置、主記憶装置の制御方法、およびこの主記憶装置を用いた情報処理装置
JP2009003783A (ja) * 2007-06-22 2009-01-08 Toshiba Corp 不揮発性メモリの制御装置及び制御方法及び記憶装置
TWI457940B (zh) * 2009-05-15 2014-10-21 Macronix Int Co Ltd 區塊為基礎快閃記憶體之位元組存取
US8271719B2 (en) * 2009-10-29 2012-09-18 Freescale Semiconductor, Inc. Non-volatile memory controller device and method therefor
JP2012128816A (ja) * 2010-12-17 2012-07-05 Toshiba Corp メモリシステム

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