JP2013538288A - 基板のプラズマ処理 - Google Patents
基板のプラズマ処理 Download PDFInfo
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- JP2013538288A JP2013538288A JP2013520006A JP2013520006A JP2013538288A JP 2013538288 A JP2013538288 A JP 2013538288A JP 2013520006 A JP2013520006 A JP 2013520006A JP 2013520006 A JP2013520006 A JP 2013520006A JP 2013538288 A JP2013538288 A JP 2013538288A
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder, liquid
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2240/00—Testing
- H05H2240/10—Testing at atmospheric pressure
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2240/00—Testing
- H05H2240/20—Non-thermal plasma
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
国際公開第03/097245号及び同第03/101621号は、噴霧したコーティング材を基板に適用してコーティングを形成することについて記述している。噴霧したコーティング材は、超音波ノズル又はネブライザーのようなアトマイザーを出る際に、励起した媒質(プラズマ)を通過して基板に達する。基板は、励起した媒質から遠隔に位置付ける。プラズマはパルス状に生成される。
誘電体ハウジング内の乱流様式を促進するための本発明による好ましいプロセスにおいて、誘電体ハウジングの出口及び基板の間の間隙の表面積は、プロセスガス用入口の面積の35倍未満である。誘電体ハウジングがプロセスガス用入口を複数有する場合、誘導体ハウジングの出口及び基板の間の間隙の表面積は、プロセスガス用入口の合計面積の35倍未満である。
動力を印加すると、局在的電場が電極の周りに形成される。これらが電極周囲のガスと相互作用し、プラズマを形成する。したがってこのプラズマ生成装置は対電極が特に提供されなくても動作できる。あるいは、接地対電極をプラズマ管の軸に沿った任意の場所に位置付けてもよい。
メタクリル酸、アクリル酸、フマル酸及びエステル、イタコン酸(及びエステル)、無水マレイン酸、スチレン、α−メチルスチレン、ハロゲン化アルケン、例えば塩化ビニル及びフッ化ビニルのようなハロゲン化ビニル、並びにフッ化アルケン、例えば過フッ化アルケン、アクリロニトリル、メタクリロニトリル、エチレン、プロピレン、アリルアミン、ハロゲン化ビニリデン、ブタジエン、N−イソプロピルアクリルアミド、メタクリルアミドのようなアクリルアミド、エポキシ化合物、例えばグリシドキシプロピルトリメトキシシラン、グリシドール、スチレンオキシド、ブタジエン一酸化物、エチレングリコールジグリシジルエーテル、グリシジルメタクリレート、ビスフェノールAジグリシジルエーテル(及びそのオリゴマー)、ビニルシクロヘキセンオキシド、ピロール及びチオフェン並びにそれらの誘導体のような導電ポリマー、及びリン含有化合物、例えばジメチルアリルホスホネートが含まれる。コーティング形成材料は、アクリル官能性オルガノシロキサン及び/又はシランもまた含むことができる。
図1の装置を使用してSiCO膜を導電性シリコンウェハ基材に堆積した。20kHz及び最大電力100ワットで動作したPlasma Technics ETI110101に電極(11、12)を接続した。ヘリウムプロセスガスを8リットル/分で装置に流した。2つの直径1mmの針電極(11、12)の周囲を囲む誘電体は直径2mmのチャネル(16、17)を形成し、チャネルはそれらの針を取り巻いてガスが特定の速度を得てジェットを形成するようにガスを強制する。Burgener Incにより供給されたAri Mist HPアトマイザー(21)にテトラエチルオルトケイ酸塩前駆体を供給した。誘電体ハウジング(14)は、直径18mm及び電極(11、12)から出口(15)までの長さ75mmのプラズマ管(13)を画定する。石英ハウジング(14)及びシリコンウェハ基板の間の間隙(30)は0.8mmとした。間隙(30)の表面積は、プロセスガス用入口(16、17)の合計面積の約10倍であった。
実施例2では、対電極は使用しなかった。
実施例3では、接地対電極を誘電体ハウジング(14)の底から14mmに位置付け、プラズマ管(13)の外に配置した。
Claims (14)
- 入口と出口とを有する誘電体ハウジング内に位置した少なくとも1つの電極に無線周波高電圧を印加する一方、プロセスガスを入口から電極を通過して出口へと流れるようにして非平衡大気圧プラズマを生成し、噴霧した又はガス状の表面処理剤を前記非平衡大気圧プラズマに組み込み、基板を前記誘電体ハウジングの出口に隣接して、該基板の表面がプラズマと接触し、誘電体ハウジングの出口に対して移動するように位置付けることにより基板をプラズマ処理するに当たり、前記プロセスガスの流れと、前記誘電体ハウジングの出口及び基板の間の間隙とを、プロセスガスが誘電体ハウジング内で乱流様式を有するように制御することを特徴とする基板のプラズマ処理方法。
- 前記誘電体ハウジングの出口及び基板の間の間隙を1.5mm未満になるように制御することを特徴とする請求項1に記載の方法。
- 前記プロセスガスの流れをモニターし、前記プラズマの出口及び基板の間の間隙を添付図面の図4に示した線より下になるように制御することを特徴とする請求項2に記載の方法。
- 前記誘電体ハウジングの出口及び基板の間の間隙の表面積が、プロセスガス用入口の面積の35倍未満であることを特徴とする請求項1に記載の方法。
- 前記誘電体ハウジングの出口及び基板の間の間隙の表面積が、プロセスガス用入口の面積の2〜10倍であることを特徴とする請求項4に記載の方法。
- 前記電極又はそれぞれの電極が、針電極であることを特徴とする請求項1〜5のいずれか一項に記載の方法。
- 前記電極又はそれぞれの電極を、プロセスガスが流れる狭いチャネルによって囲むことを特徴とする請求項6に記載の方法。
- 前記基板を金属板を覆う誘電体層上に位置付け、対電極を使用しないことを特徴とする請求項1〜7のいずれか一項に記載の方法。
- 接地対電極を前記プラズマの管の外に位置付け、該プラズマ管に沿った位置に配置することを特徴とする請求項1〜7のいずれか一項に記載の方法。
- 前記プロセスガスが、前記電極を通過する表面処理剤を運ぶことを特徴とする請求項1〜9のいずれか一項に記載の方法。
- 前記電極を、前記ハウジング内の表面処理剤用のアトマイザーと組み合わせることを特徴とする請求項1〜10のいずれか一項に記載の方法。
- 前記無線周波高電圧を、前記アトマイザーを囲み、同じ極性を有する誘導体ハウジング内に位置付けた少なくとも2つの電極に印加することを特徴とする請求項11に記載の方法。
- 前記電極が、前記アトマイザーを囲む管電極であることを特徴とする請求項11に記載の方法。
- プロセスガス用入口と、該プロセスガスが前記入口から電極を通過して出口へと流れるように配置した出口とを有する誘電体ハウジング内に位置付けた少なくとも1つの電極に接続した無線周波高圧電源と、噴霧された表面処理剤を前記誘電体ハウジング内に導入する手段と、前記誘電体ハウジングの出口に隣接した基板の支持手段とを備える基板をプラズマ処理する装置で、前記誘電体ハウジングの出口及び基板の間の間隙の表面積が前記プロセスガス用入口の面積の35倍未満となるように前記支持手段を位置付けることを特徴とする基板のプラズマ処理装置。
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EP11305494 | 2011-04-27 | ||
EP11305494.4 | 2011-04-27 | ||
PCT/EP2011/003624 WO2012010299A1 (en) | 2010-07-21 | 2011-07-20 | Plasma treatment of substrates |
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