JP2013531876A - 弾性及び浮力を用いる融液の表面からのシートの取り出し - Google Patents
弾性及び浮力を用いる融液の表面からのシートの取り出し Download PDFInfo
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- 239000000155 melt Substances 0.000 claims abstract description 195
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 46
- 238000001816 cooling Methods 0.000 claims description 41
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 239000012530 fluid Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 description 57
- 230000005499 meniscus Effects 0.000 description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 32
- 230000006641 stabilisation Effects 0.000 description 10
- 238000011105 stabilization Methods 0.000 description 10
- 230000008014 freezing Effects 0.000 description 9
- 238000007710 freezing Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 230000002706 hydrostatic effect Effects 0.000 description 7
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000005484 gravity Effects 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/007—Mechanisms for moving either the charge or the heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/06—Non-vertical pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (16)
- シート形成方法であって、
第1のシートの高さの第1の領域の中の融液の表面上で材料のシートを形成するように、前記材料の前記融液を冷却するステップと、
前記シートを第2の領域へ平行移動させるステップであって、前記シートは前記第1のシートの高さより高い第2のシートの高さを有するステップと、
前記シートを前記融液から分離するステップと、
を含む、シート形成方法。 - 前記材料は、シリコン又はシリコンとゲルマニウムである、請求項1に記載の方法。
- 前記融液及び前記シートを流すステップを、さらに含む、請求項1に記載の方法。
- 前記分離するステップ後に、流体力又は機械力のうちの少なくとも1つを用いて、前記第2のシートの高さで、前記シートを支持するステップを、さらに含む、請求項1に記載の方法。
- シート形成方法であって、
種ウエーハを材料の融液に挿入するステップであって、前記融液は、前記融液を含む容器のエッジより高い第1の高さの表面を有するステップと、
前記融液の中の前記種ウエーハを冷却プレートに近接する領域へ平行移動させるステップと、
前記融液の前記表面を前記第1の高さより低い第2の高さへ下げるステップと、
前記領域の中の前記種ウエーハを用いて、前記融液上で前記材料のシートを形成するステップと、
前記シート及び前記種ウエーハを平行移動させるステップと、
前記シートを前記融液から前記容器のエッジで分離するステップと、
を含む、シート形成方法。 - 前記材料は、シリコン又はシリコンとゲルマニウムである、請求項5に記載の方法。
- 前記融液及び前記シートを流すステップを、さらに含む、請求項5に記載の方法。
- 前記シートは、前記領域に近接の第1のシートの高さを有し、かつ、前記分離するステップ後に、前記第1のシートの高さより高い第2のシートの高さを有する、請求項5に記載の方法。
- 前記分離するステップ後に、流体力又は機械力のうちの少なくとも1つを用いて、前記第2のシートの高さで、前記シートを支持するステップを、さらに含む、請求項8に記載の方法。
- シート形成方法であって、
種ウエーハを材料の融液に挿入するステップであって、前記融液は、前記融液を含む容器のエッジ以下の第1の高さの表面を有するステップと、
前記種ウエーハを冷却プレートに近接する領域へ平行移動させるステップと、
前記種ウエーハを用いて、前記融液上で前記材料のシートを形成するステップであって、前記シートは前記領域に近接の第1のシートの高さを有するステップと、
前記シート及び前記種ウエーハを平行移動させるステップと、
前記シートを前記融液から分離するステップと、
を含み、
前記シートは、前記分離するステップ後に、前記第1のシートの高さより高い第2のシートの高さを有する、シート形成方法。 - 前記材料は、シリコン又はシリコンとゲルマニウムである、請求項10に記載の方法。
- 前記融液及び前記シートを流すステップを、さらに含む、請求項10に記載の方法。
- 前記分離するステップ後に、流体力又は機械力のうちの少なくとも1つを用いて、前記第2のシートの高さで、前記シートを支持するステップを、さらに含む、請求項10に記載の方法。
- 前記形成するステップ前に、前記表面を、前記第1の高さより高い第2の高さへ持ち上げるステップを、さらに含む、請求項10に記載の方法。
- 前記種ウエーハを持ち上げるステップを、さらに含み、それによって前記シートを持ち上げる、請求項10に記載の方法。
- 前記平行移動させるステップは、前記融液の中の前記種ウエーハを平行移動させるステップを、含む、請求項10に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US33206210P | 2010-05-06 | 2010-05-06 | |
US61/332,062 | 2010-05-06 | ||
US13/039,808 US8764901B2 (en) | 2010-05-06 | 2011-03-03 | Removing a sheet from the surface of a melt using elasticity and buoyancy |
US13/039,808 | 2011-03-03 | ||
PCT/US2011/027209 WO2011139407A1 (en) | 2010-05-06 | 2011-03-04 | Removing a sheet from the surface of a melt using elasticity and buoyancy |
Publications (2)
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JP2013531876A true JP2013531876A (ja) | 2013-08-08 |
JP5848752B2 JP5848752B2 (ja) | 2016-01-27 |
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JP2013509055A Expired - Fee Related JP5848752B2 (ja) | 2010-05-06 | 2011-03-04 | 弾性及び浮力を用いる融液の表面からのシートの取り出し |
Country Status (7)
Country | Link |
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US (1) | US8764901B2 (ja) |
EP (1) | EP2567001B1 (ja) |
JP (1) | JP5848752B2 (ja) |
KR (1) | KR101568003B1 (ja) |
CN (1) | CN103025924B (ja) |
TW (1) | TWI481750B (ja) |
WO (1) | WO2011139407A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US10526720B2 (en) | 2015-08-19 | 2020-01-07 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for forming crystalline sheet from a melt |
CN107217296B (zh) * | 2017-04-28 | 2019-05-07 | 常州大学 | 一种硅片水平生长设备和方法 |
KR20220017413A (ko) * | 2019-05-13 | 2022-02-11 | 리딩 엣지 이큅먼트 테크놀로지스, 아이엔씨. | 용광로 내 가스에 대한 실리콘 리본의 노출 |
KR20220044806A (ko) * | 2019-08-09 | 2022-04-11 | 리딩 엣지 이큅먼트 테크놀로지스, 아이엔씨. | 산소 농도가 낮은 영역이 있는 리본 또는 웨이퍼의 제조 |
Citations (2)
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---|---|---|---|---|
JPS5215485A (en) * | 1975-07-28 | 1977-02-05 | Toyo Silicon Kk | Process for growth of ribbon crystals by lateral pulling |
JPS5224165A (en) * | 1975-08-20 | 1977-02-23 | Toyo Silicon Kk | Process for growth of ribbon crystal by horizontal drawing |
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DE2633961C2 (de) | 1975-07-28 | 1986-01-02 | Mitsubishi Kinzoku K.K. | Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes |
JPS5261180A (en) | 1975-11-14 | 1977-05-20 | Toyo Shirikon Kk | Horizontal growth of crystal ribbons |
JPS5580797A (en) | 1978-12-09 | 1980-06-18 | Agency Of Ind Science & Technol | Ribbon crystal growing method by lateral pulling accompanied by circulating melt convection |
DE2903061A1 (de) | 1979-01-26 | 1980-08-07 | Heliotronic Gmbh | Verfahren zur herstellung grosskristalliner vorzugsorientierter siliciumfolien |
US4289571A (en) | 1979-06-25 | 1981-09-15 | Energy Materials Corporation | Method and apparatus for producing crystalline ribbons |
US4322262A (en) | 1980-03-03 | 1982-03-30 | T. C. Mfg. Co., Inc. | Apparatus for wrapping conduits with sheet material |
US4417944A (en) | 1980-07-07 | 1983-11-29 | Jewett David N | Controlled heat sink for crystal ribbon growth |
AU543747B2 (en) | 1981-09-17 | 1985-05-02 | Energy Materials Corp. | Single crystal ribbons |
JPS598688A (ja) * | 1982-07-06 | 1984-01-17 | Matsushita Electric Ind Co Ltd | 薄膜結晶の製造方法 |
CN1016852B (zh) * | 1985-10-19 | 1992-06-03 | 阿利金尼·勒德卢姆钢铁公司 | 连续铸造结晶带材之方法和装置 |
WO2007093082A1 (fr) * | 2006-02-16 | 2007-08-23 | Yonggang Jin | Procédé de production de tranche de silicium utilisant la méthode du flottage et appareil correspondant |
JP2010504905A (ja) | 2006-09-28 | 2010-02-18 | ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド | 結晶シリコン基板を製造するための方法及び装置 |
US7855087B2 (en) | 2008-03-14 | 2010-12-21 | Varian Semiconductor Equipment Associates, Inc. | Floating sheet production apparatus and method |
US7816153B2 (en) | 2008-06-05 | 2010-10-19 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for producing a dislocation-free crystalline sheet |
-
2011
- 2011-03-03 US US13/039,808 patent/US8764901B2/en active Active
- 2011-03-04 KR KR1020127031458A patent/KR101568003B1/ko active IP Right Grant
- 2011-03-04 CN CN201180022324.XA patent/CN103025924B/zh not_active Expired - Fee Related
- 2011-03-04 WO PCT/US2011/027209 patent/WO2011139407A1/en active Application Filing
- 2011-03-04 EP EP11707770.1A patent/EP2567001B1/en not_active Not-in-force
- 2011-03-04 TW TW100107350A patent/TWI481750B/zh not_active IP Right Cessation
- 2011-03-04 JP JP2013509055A patent/JP5848752B2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5215485A (en) * | 1975-07-28 | 1977-02-05 | Toyo Silicon Kk | Process for growth of ribbon crystals by lateral pulling |
JPS5224165A (en) * | 1975-08-20 | 1977-02-23 | Toyo Silicon Kk | Process for growth of ribbon crystal by horizontal drawing |
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Publication number | Publication date |
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TW201139762A (en) | 2011-11-16 |
US8764901B2 (en) | 2014-07-01 |
WO2011139407A1 (en) | 2011-11-10 |
JP5848752B2 (ja) | 2016-01-27 |
KR101568003B1 (ko) | 2015-11-10 |
EP2567001B1 (en) | 2015-08-05 |
US20110272115A1 (en) | 2011-11-10 |
CN103025924A (zh) | 2013-04-03 |
TWI481750B (zh) | 2015-04-21 |
KR20130062940A (ko) | 2013-06-13 |
EP2567001A1 (en) | 2013-03-13 |
CN103025924B (zh) | 2016-04-06 |
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