JP2013529374A - 光起電力アプリケーションにおける微結晶材料を蒸着するための方法および装置 - Google Patents

光起電力アプリケーションにおける微結晶材料を蒸着するための方法および装置 Download PDF

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Publication number
JP2013529374A
JP2013529374A JP2013504086A JP2013504086A JP2013529374A JP 2013529374 A JP2013529374 A JP 2013529374A JP 2013504086 A JP2013504086 A JP 2013504086A JP 2013504086 A JP2013504086 A JP 2013504086A JP 2013529374 A JP2013529374 A JP 2013529374A
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JP
Japan
Prior art keywords
substrate
deposition
deposition system
semiconductor
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2013504086A
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English (en)
Japanese (ja)
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JP2013529374A5 (zh
Inventor
クリンドワース，マルクス
クピッヒ，マルクス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TEL Solar AG
Original Assignee
TEL Solar AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TEL Solar AG filed Critical TEL Solar AG
Publication of JP2013529374A publication Critical patent/JP2013529374A/ja
Publication of JP2013529374A5 publication Critical patent/JP2013529374A5/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP2013504086A 2010-04-16 2011-04-14 光起電力アプリケーションにおける微結晶材料を蒸着するための方法および装置 Pending JP2013529374A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32490910P 2010-04-16 2010-04-16
US61/324,909 2010-04-16
PCT/CH2011/000080 WO2011127619A1 (en) 2010-04-16 2011-04-14 A method and apparatus for depositing a microcrystalline material in photovoltaic applications

Publications (2)

Publication Number Publication Date
JP2013529374A true JP2013529374A (ja) 2013-07-18
JP2013529374A5 JP2013529374A5 (zh) 2014-01-09

Family

ID=44453864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013504086A Pending JP2013529374A (ja) 2010-04-16 2011-04-14 光起電力アプリケーションにおける微結晶材料を蒸着するための方法および装置

Country Status (5)

Country Link
EP (1) EP2558612A1 (zh)
JP (1) JP2013529374A (zh)
KR (1) KR20130093490A (zh)
CN (2) CN102834546B (zh)
WO (1) WO2011127619A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015048501A2 (en) * 2013-09-26 2015-04-02 Tel Solar Ag Process, film, and apparatus for top cell for a pv device
FR3023651B1 (fr) 2014-07-11 2017-10-20 Schneider Electric Ind Sas Disjoncteur electrique incluant un organe mecanique de blocage d'un pont mobile

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3046965B1 (ja) * 1999-02-26 2000-05-29 鐘淵化学工業株式会社 非晶質シリコン系薄膜光電変換装置の製造方法
CN101246932A (zh) * 2007-02-14 2008-08-20 北京行者多媒体科技有限公司 氢氩高稀释方法生产氢化硅薄膜
US8053254B2 (en) * 2008-05-26 2011-11-08 Mitsubishi Electric Corporation Apparatus for forming thin film and method of manufacturing semiconductor film
CN102138220A (zh) * 2008-08-29 2011-07-27 欧瑞康太阳Ip股份公司（特吕巴赫） 用于为具有降低的光致衰退的光伏器件淀积非晶硅膜以改进稳定性能的方法

Also Published As

Publication number Publication date
CN105887040A (zh) 2016-08-24
EP2558612A1 (en) 2013-02-20
KR20130093490A (ko) 2013-08-22
WO2011127619A1 (en) 2011-10-20
CN102834546A (zh) 2012-12-19
CN102834546B (zh) 2016-03-30

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