JP2013528945A5 - - Google Patents

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Publication number
JP2013528945A5
JP2013528945A5 JP2013510698A JP2013510698A JP2013528945A5 JP 2013528945 A5 JP2013528945 A5 JP 2013528945A5 JP 2013510698 A JP2013510698 A JP 2013510698A JP 2013510698 A JP2013510698 A JP 2013510698A JP 2013528945 A5 JP2013528945 A5 JP 2013528945A5
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JP
Japan
Prior art keywords
layer
donor
strained
epitaxial structure
donor layer
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JP2013510698A
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English (en)
Japanese (ja)
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JP2013528945A (ja
JP5848334B2 (ja
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Priority claimed from US12/783,354 external-priority patent/US8536022B2/en
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Publication of JP2013528945A publication Critical patent/JP2013528945A/ja
Publication of JP2013528945A5 publication Critical patent/JP2013528945A5/ja
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Publication of JP5848334B2 publication Critical patent/JP5848334B2/ja
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JP2013510698A 2010-05-19 2011-04-27 半導体デバイスを成長させるための複合成長用基板 Active JP5848334B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/783,354 US8536022B2 (en) 2010-05-19 2010-05-19 Method of growing composite substrate using a relaxed strained layer
US12/783,354 2010-05-19
PCT/IB2011/051844 WO2011145012A1 (en) 2010-05-19 2011-04-27 Composite growth substrate for growing a semiconductor device

Publications (3)

Publication Number Publication Date
JP2013528945A JP2013528945A (ja) 2013-07-11
JP2013528945A5 true JP2013528945A5 (cg-RX-API-DMAC10.html) 2014-06-19
JP5848334B2 JP5848334B2 (ja) 2016-01-27

Family

ID=44120315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013510698A Active JP5848334B2 (ja) 2010-05-19 2011-04-27 半導体デバイスを成長させるための複合成長用基板

Country Status (7)

Country Link
US (1) US8536022B2 (cg-RX-API-DMAC10.html)
EP (1) EP2572370A1 (cg-RX-API-DMAC10.html)
JP (1) JP5848334B2 (cg-RX-API-DMAC10.html)
KR (1) KR101810711B1 (cg-RX-API-DMAC10.html)
CN (1) CN102893373B (cg-RX-API-DMAC10.html)
TW (1) TW201222631A (cg-RX-API-DMAC10.html)
WO (1) WO2011145012A1 (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120309172A1 (en) * 2011-05-31 2012-12-06 Epowersoft, Inc. Epitaxial Lift-Off and Wafer Reuse
US10141197B2 (en) * 2016-03-30 2018-11-27 Stmicroelectronics S.R.L. Thermosonically bonded connection for flip chip packages
GB2586862B (en) 2019-09-06 2021-12-15 Plessey Semiconductors Ltd LED precursor incorporating strain relaxing structure

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
FR2817394B1 (fr) 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
US6603156B2 (en) * 2001-03-31 2003-08-05 International Business Machines Corporation Strained silicon on insulator structures
US6717213B2 (en) * 2001-06-29 2004-04-06 Intel Corporation Creation of high mobility channels in thin-body SOI devices
US7279718B2 (en) 2002-01-28 2007-10-09 Philips Lumileds Lighting Company, Llc LED including photonic crystal structure
US6774015B1 (en) * 2002-12-19 2004-08-10 International Business Machines Corporation Strained silicon-on-insulator (SSOI) and method to form the same
KR100889886B1 (ko) 2003-01-07 2009-03-20 에스. 오. 이. 떼끄 씰리꽁 오 냉쉴라또흐 떼끄놀로지 박층을 박리한 후 다층 구조를 포함하는 웨이퍼의 재활용방법
FR2851848B1 (fr) 2003-02-28 2005-07-08 Soitec Silicon On Insulator Relaxation a haute temperature d'une couche mince apres transfert
FR2857983B1 (fr) * 2003-07-24 2005-09-02 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
US7012279B2 (en) 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
US20050205883A1 (en) 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
US6956247B1 (en) 2004-05-26 2005-10-18 Lumileds Lighting U.S., Llc Semiconductor light emitting device including photonic band gap material and luminescent material
US7442964B2 (en) 2004-08-04 2008-10-28 Philips Lumileds Lighting Company, Llc Photonic crystal light emitting device with multiple lattices
US7244630B2 (en) * 2005-04-05 2007-07-17 Philips Lumileds Lighting Company, Llc A1InGaP LED having reduced temperature dependence
US7273798B2 (en) * 2005-08-01 2007-09-25 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Gallium nitride device substrate containing a lattice parameter altering element
US20070069225A1 (en) 2005-09-27 2007-03-29 Lumileds Lighting U.S., Llc III-V light emitting device
US8334155B2 (en) * 2005-09-27 2012-12-18 Philips Lumileds Lighting Company Llc Substrate for growing a III-V light emitting device
US7547908B2 (en) * 2006-12-22 2009-06-16 Philips Lumilieds Lighting Co, Llc III-nitride light emitting devices grown on templates to reduce strain
US20080259980A1 (en) * 2007-04-19 2008-10-23 Philips Lumileds Lighting Company, Llc Semiconductor Light Emitting Device Including Oxide Layer
US20090278233A1 (en) * 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
FR2931293B1 (fr) 2008-05-15 2010-09-03 Soitec Silicon On Insulator Procede de fabrication d'une heterostructure support d'epitaxie et heterostructure correspondante
TWI457984B (zh) * 2008-08-06 2014-10-21 Ｓ Ｏ Ｉ Ｔｅｃ絕緣層上矽科技公司 應變層的鬆弛方法
EP2329517A1 (en) * 2008-09-24 2011-06-08 S.O.I.Tec Silicon on Insulator Technologies Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same
JP5109912B2 (ja) * 2008-10-03 2012-12-26 セイコーエプソン株式会社 半導体装置の製造方法、半導体装置
US8227791B2 (en) * 2009-01-23 2012-07-24 Invenlux Limited Strain balanced light emitting devices
US8481991B2 (en) * 2009-08-21 2013-07-09 The Regents Of The University Of California Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations
US8105852B2 (en) * 2010-01-15 2012-01-31 Koninklijke Philips Electronics N.V. Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate

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