JP2013504842A - メゾスコピック太陽電池の製造方法 - Google Patents
メゾスコピック太陽電池の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000002346 layers by function Substances 0.000 claims abstract description 18
- 230000002706 hydrostatic effect Effects 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 34
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 16
- 239000010410 layer Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- 238000000465 moulding Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 239000002861 polymer material Substances 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 89
- 239000000975 dye Substances 0.000 description 39
- 230000031700 light absorption Effects 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 229920000307 polymer substrate Polymers 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 239000002096 quantum dot Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 3
- 238000007606 doctor blade method Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004801 process automation Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003826 uniaxial pressing Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2022—Light-sensitive devices characterized by he counter electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Abstract
基板の表面の少なくとも一部を電極膜又は他の機能層で被覆する工程、および静水圧力を被覆された基板の表面に適用し、それにより電極膜または機能層を基板上に成形する工程を含む、色素増感太陽電池または他のメゾスコピック太陽電池の製造方法。
Description
a)基板の表面の少なくとも一部を電極膜または他の機能層で被覆する工程、および
b)前記被覆された基板に静水圧力を印加し、それによって前記電極膜または前記機能層を前記基板上に成形する工程
を含む、製造方法が提供される。
最初に図1を参照すると、圧力室1が示されており、その内部に支持されているのはフレキシブルバッグ5の中で密封された基板3である。フレキシブルDSSCの製造の場合、基板3は高分子材料(典型的にはITO−PEN膜)から作製され、TiO2膜7で被覆される。被覆された基板3はフレキシブルバッグ5の中で真空密封され、次いで圧力室1内で冷間静水圧プレス(CIP)8に付される。これは液状媒体9、典型的には水または油、を圧力媒体として圧力室1の中で用いることによって達成される。約数十から数百MPaの高圧が、被覆された基板3を包含するバッグ5の周囲全方向に、液状媒体9を介して印加され、TiO2膜7の基板3上への圧縮をもたらす。CIPの使用は、高い強度および均一性が容易に達成される電極膜をもたらす。同様に、曲面または複雑な形状を有するソーラーパネルも製造できるようになる。
Claims (17)
- 色素増感太陽電池または他のメゾスコピック太陽電池の製造方法であって、
a)基板の表面の少なくとも一部を電極膜または他の機能層で被覆する工程、および
b)前記被覆された基板に静水圧力を印加し、それによって前記電極膜または前記機能層を前記基板上に成形する工程
を含む、製造方法。 - 前記電極膜を形成する材料がTiO2を含む、請求項1に記載の製造方法。
- 前記電極膜を形成する材料が炭素を含む、請求項1に記載の製造方法。
- 前記機能層が、対電極または伝導層を含む、請求項1に記載の製造方法。
- 前記電極膜の材料が増感剤と前もって混合される、請求項1〜4のいずれか一項に記載の製造方法。
- 前記電極膜の材料が感光染料と前もって混合される、請求項1〜5のいずれか一項に記載の製造方法。
- 第一の前記電極膜を第一の前記基板上に形成する工程、第二の前記電極膜を第二の前記基板上に形成する工程、前記第一の電極膜および前記第二の電極膜を向かい合わせで接触させる工程、前記第一の電極膜および前記第二の電極膜を静水圧力に付し、それにより前記第二の電極膜を前記第一の電極膜へ成形する工程、および前記第二の基板を前記第二の電極膜から分離する工程を含む、請求項1〜6のいずれか一項に記載の製造方法。
- 第一の前記電極膜を前記基板上に形成する工程、第二の前記電極膜を粉末状で前記第一の電極膜の表面に適用する工程、および前記第一の電極膜および前記第二の電極膜上に静水圧力を印加して前記第二の電極膜を前記第一の電極膜上に成形する工程を含む、請求項1〜6のいずれか一項に記載の製造方法。
- 前記第一の電極膜が第一の増感剤で増感され、一方で前記第二の電極膜が第二の増感剤で増感される、請求項7または8に記載の製造方法。
- 前記基板がフレキシブルであり、高分子材料から形成される、請求項1〜9のいずれか一項に記載の製造方法。
- 前記基板が剛性であり、金属、セラミックまたはガラス材料から形成される、請求項1〜9のいずれか一項に記載の製造方法。
- 前記被覆された基板をフレキシブルな型またはバッグの中に密封し、前記静水圧力を圧力室内の前記被覆された基板に印加することによって、前記静水圧力が前記被覆された基板に印加される、請求項1〜11のいずれか一項に記載の製造方法。
- 前記圧力室内の圧力媒体として、液体または気体が用いられる、請求項10に記載の製造方法。
- 前記静水圧力が、自由型、粗型、または固定型プロセスのいずれかで印加される、請求項1〜13のいずれか一項に記載の製造方法。
- 前記圧力媒体が加熱される、請求項11に記載の製造方法。
- 前記電極膜または前記他の機能層が印刷プロセスを用いて適用される、請求項1〜15のいずれか一項に記載の製造方法。
- 請求項1〜16のいずれか一項に記載の製造方法で製造したメゾスコピック太陽電池。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2009904376 | 2009-09-10 | ||
AU2009904376A AU2009904376A0 (en) | 2009-09-10 | A method of manufacturing dye sensitized solar cells | |
PCT/AU2010/001169 WO2011029145A1 (en) | 2009-09-10 | 2010-09-10 | Method of manufacturing mesoscopic solar cells |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2013504842A true JP2013504842A (ja) | 2013-02-07 |
Family
ID=43731859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012528195A Pending JP2013504842A (ja) | 2009-09-10 | 2010-09-10 | メゾスコピック太陽電池の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20130048068A1 (ja) |
EP (1) | EP2476139A4 (ja) |
JP (1) | JP2013504842A (ja) |
KR (1) | KR20120125223A (ja) |
CN (1) | CN102576753A (ja) |
AU (1) | AU2010292981A1 (ja) |
WO (1) | WO2011029145A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014031281A (ja) * | 2012-08-01 | 2014-02-20 | Institute Of National Colleges Of Technology Japan | 酸化チタン製造方法、酸化チタン、光触媒、および色素増感太陽電池の光電極 |
CN112786819A (zh) * | 2020-12-30 | 2021-05-11 | 广东聚华印刷显示技术有限公司 | 功能层的制备方法、功能层、光电器件 |
CN113076630B (zh) * | 2021-03-22 | 2022-05-20 | 华中科技大学 | 一种光电器件中介观层的仿真模型建立方法及其应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007534119A (ja) * | 2004-04-23 | 2007-11-22 | ソニー ドイチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 基板上での多孔質半導体膜の製造方法 |
US20080092953A1 (en) * | 2006-05-15 | 2008-04-24 | Stion Corporation | Method and structure for thin film photovoltaic materials using bulk semiconductor materials |
US20090065042A1 (en) * | 2007-09-07 | 2009-03-12 | Reynolds Glyn J | Integrated Electrochemical and Solar Cell |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5569520A (en) * | 1994-01-12 | 1996-10-29 | Martin Marietta Energy Systems, Inc. | Rechargeable lithium battery for use in applications requiring a low to high power output |
JP4470370B2 (ja) * | 2003-01-08 | 2010-06-02 | ソニー株式会社 | 光電変換素子の製造方法 |
JP2005166313A (ja) * | 2003-11-28 | 2005-06-23 | Ngk Spark Plug Co Ltd | 色素増感型太陽電池 |
EP2006949A2 (en) * | 2006-03-02 | 2008-12-24 | Tokyo University of Science, Educational Foundation | Method for producing photoelectrode for dye-sensitized solar cell, photoelectrode for dye-sensitized solar cell, and dye-sensitized solar cell |
KR100839371B1 (ko) * | 2006-11-17 | 2008-06-19 | 삼성에스디아이 주식회사 | 염료감응 태양전지 |
KR100947371B1 (ko) * | 2008-02-26 | 2010-03-15 | 한국과학기술연구원 | 다파장 흡수 나노 구조 염료감응 태양전지 및 그 제조방법 |
-
2010
- 2010-09-10 KR KR1020127009318A patent/KR20120125223A/ko not_active Application Discontinuation
- 2010-09-10 US US13/394,978 patent/US20130048068A1/en not_active Abandoned
- 2010-09-10 WO PCT/AU2010/001169 patent/WO2011029145A1/en active Application Filing
- 2010-09-10 EP EP10814809.9A patent/EP2476139A4/en not_active Withdrawn
- 2010-09-10 AU AU2010292981A patent/AU2010292981A1/en not_active Abandoned
- 2010-09-10 JP JP2012528195A patent/JP2013504842A/ja active Pending
- 2010-09-10 CN CN2010800482748A patent/CN102576753A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007534119A (ja) * | 2004-04-23 | 2007-11-22 | ソニー ドイチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 基板上での多孔質半導体膜の製造方法 |
US20080092953A1 (en) * | 2006-05-15 | 2008-04-24 | Stion Corporation | Method and structure for thin film photovoltaic materials using bulk semiconductor materials |
US20090065042A1 (en) * | 2007-09-07 | 2009-03-12 | Reynolds Glyn J | Integrated Electrochemical and Solar Cell |
Also Published As
Publication number | Publication date |
---|---|
US20130048068A1 (en) | 2013-02-28 |
AU2010292981A1 (en) | 2012-04-26 |
CN102576753A (zh) | 2012-07-11 |
EP2476139A4 (en) | 2014-04-23 |
KR20120125223A (ko) | 2012-11-14 |
WO2011029145A1 (en) | 2011-03-17 |
EP2476139A1 (en) | 2012-07-18 |
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