JP2013258318A - High frequency package - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a high frequency package which improves the suppression capability of unnecessary resonance waves in a package and avoids limiting a package size.SOLUTION: A high frequency package comprises: a second surface layer conductor which is separated from a first surface layer conductor and is disposed at the inner side of the first surface layer conductor; multiple resistor filling through holes that are respectively connected with the first surface layer conductor and the second surface layer conductor; an inner layer conductor connected with the resistor filling through holes; and a rear surface conductor. The second surface layer conductor is arranged at an area near an inner wall of the lid so as to be along the inner wall. The resistor filling through holes, which connect the second surface layer conductor with the inner layer conductor, are disposed close to the lid inner wall side in the second surface layer conductor so as to be arranged along the inner wall of the lid.

Description

  The present invention relates to a high-frequency package in which a semiconductor element that processes a microwave or millimeter-wave band high-frequency signal is accommodated.

  A device using a high-frequency semiconductor element that processes a high-frequency signal needs to accommodate the semiconductor element in a hermetically shielded package from the viewpoint of moisture, dust, and EMC (Electro-Magnetic Compatibility). However, since the package is electromagnetically shielded, there is a problem that unnecessary resonance waves are generated in the package (for example, see Patent Documents 1 and 2).

  Patent Document 1 is a package having a configuration in which a plurality of metal-filled through-holes and resistor-filled through-holes are arranged in a cavity wall of a dielectric multilayer substrate in which a cavity for housing a semiconductor element is formed. This package forms a non-reflective termination by disposing a resistor-filled through hole at a distance of 1/4 wavelength of a specific unnecessary resonance wave from the metal-filled through hole, thereby forming a specific unnecessary resonance wave and its odd number. A suppression effect is obtained for a mode having a double frequency.

  Patent Document 2 is a high-frequency package in which a semiconductor element is mounted on a multilayer dielectric substrate, its periphery is surrounded by a seal ring, and the upper surface of the seal ring is sealed with a sealing lid, and a resistor filled through is directly under the seal ring. It has a configuration with holes. By arranging the resistor-filled through hole directly under the seal ring, the high-frequency current generated by the unnecessary resonance wave is consumed by passing through the resistor-filled through hole, and the unnecessary resonance wave is suppressed.

JP2008-263021 JP2009-212309A

  However, in the high frequency package of Patent Document 1, it is necessary to secure a quarter wavelength of the unnecessary resonance wave in the cavity wall so that the distance between the metal-filled through hole and the resistor-filled through hole is 1/100. There is a problem that it is not possible to suppress the TE10 mode that resonates at ½ wavelength, which is two or more wavelengths, which is a basic resonance mode. Further, there is a problem that a suppression effect cannot be obtained in a mode having a frequency that is an even multiple of a specific unnecessary resonance wave. Furthermore, since the cavity wall needs to have a thickness equal to or greater than ¼ wavelength of the unnecessary resonance wave, there is a problem that the package size is limited, and the longer the wavelength of the unnecessary resonance wave, the larger the package size.

  Further, the high frequency package of Patent Document 2 does not depend on the TE10 mode as in Patent Document 1, and does not restrict the package size. However, in the high-frequency package of Patent Document 2, a portion where the current density of the high-frequency current generated by the unnecessary resonance wave is high also exists around the seal ring. There is a problem that high frequency current cannot be consumed sufficiently and the amount of suppression of unnecessary resonance waves becomes insufficient.

  The present invention has been made to solve such problems, and an object of the present invention is to obtain a high-frequency package that improves the ability to suppress unnecessary resonance waves inside the package and does not restrict the package size.

  The high frequency package according to the present invention includes a first surface conductor, a second surface conductor separated from the first surface conductor, and disposed inside the first surface conductor, the first surface conductor, A plurality of resistor-filled through holes connected to the second surface layer conductor, an inner layer conductor connected to the resistor-filled through hole, a back conductor, and a plurality of metal-filled throughs connecting the inner layer conductor and the back conductor A dielectric multilayer substrate on which a semiconductor element is mounted, an inner wall is provided so as to surround the semiconductor element on the dielectric multilayer substrate, the inner wall is connected to the first surface conductor, A lid that forms a space inside the inner wall, and the second surface layer conductor is arranged along the vicinity of the inner wall of the lid body, and connects the second surface layer conductor and the inner layer conductor. Resistor filling through Lumpur is disposed closer to the inner wall of the cover body in the second surface conductor, in which are arranged along the inner wall of the lid.

  According to the present invention, since the high-frequency current generated by the unnecessary resonance wave is consumed by the resistor-filled through hole, the unnecessary resonance wave can be suppressed without depending on the package shape.

1 is a side sectional view showing a configuration of a high frequency package according to Embodiment 1. FIG. 4 is a top view showing a surface layer pattern of the high-frequency package according to Embodiment 1. FIG. It is a figure which shows the current density distribution which arises in the high frequency package by Embodiment 1. FIG.

Embodiment 1 FIG.
1 is a cross-sectional view seen from a side, showing the configuration of a high-frequency package according to Embodiment 1 of the present invention. In the figure, the high-frequency package includes a rectangular parallelepiped dielectric multilayer substrate 8, a rectangular frame-shaped seal ring 2, and a rectangular thin plate-shaped sealing lid 1. The dielectric multilayer substrate 8 is provided with a cavity 11 that forms a hollow portion recessed upward so that the semiconductor element 9 can be mounted. The lower part of the semiconductor element 9 is accommodated in a space formed by the cavity 11. The seal ring 2 is made of a metal conductor, is bonded to the upper surface of the dielectric multilayer substrate 8, and is disposed so as to surround the upper portion of the semiconductor element 9. The sealing lid 1 is made of a metal conductor, and is bonded to the upper surface of the seal ring 2 in a state where the semiconductor element 9 is mounted on the dielectric multilayer substrate 8. When the sealing lid 1 is joined to the seal ring 2, the semiconductor element 9 is sealed in a space surrounded by the dielectric multilayer substrate 8, the seal ring 2, and the sealing lid 1 while keeping airtightness. It will be. The sealing lid 1 and the seal ring 2 form a lid, and the lid forms a space for accommodating the semiconductor element 9.

  In the dielectric multilayer substrate 8, a surface layer conductor 3a connected to the lower surface of the seal ring 2 is formed on the upper surface layer. The seal ring 2 is joined to the surface layer conductor 3a by brazing or soldering. In the dielectric multilayer substrate 8, a surface layer conductor 3b is formed inside the surface layer conductor 3a in the upper surface layer, and is separated from and close to the end of the surface layer conductor 3a. The dielectric multilayer substrate 8 has the back conductor 5 formed on the lower back layer. In the dielectric multilayer substrate 8, the inner layer conductor 4 is formed in the dielectric layer between the surface layer and the back surface layer. The dielectric multilayer substrate 8 has the back conductor 5 formed on the back layer. A partial surface of the inner layer conductor 4 faces the space formed by the cavity 11 and is connected to the ground surface or the ground terminal on the back surface of the semiconductor element 9. The plurality of metal-filled through holes 6 connect between the inner layer conductor 4 and the back conductor 5. In addition, the plurality of resistor-filled through holes 7 partially connect the inner layer conductor 4 and the surface layer conductor 3a, and the other part connect the inner layer conductor 4 and the surface layer conductor 3b. The surface conductor 3 b is disposed in the vicinity of the seal ring 2 along the inside of the seal ring 2 so as not to contact the seal ring 2. Further, the resistor-filled through hole 7 is disposed along the seal ring 2 side of the surface layer conductor 3b at a position close to the seal ring 2 side.

  FIG. 2 is a diagram showing a surface layer pattern of the dielectric multilayer substrate 8 of the high-frequency package according to the first embodiment, and the joint surface between the seal ring 2 and the dielectric multilayer substrate 8 is viewed from above (sealing plate 1 side). It is a figure (a figure before joining the seal ring 2). FIG. 2 illustrates the surface layer conductor 3a and the surface layer conductor 3b as surface layer patterns. Here, the surface layer conductor 3b is disposed inside the surface layer conductor 3a, and the two surface layer conductors are separated in the surface layer. In the example of FIG. 2, the surface conductor 3 a and the surface conductor 3 b have a square shape, but it is not always necessary to have a square shape, and the surface conductor 3 a and the surface conductor 3 b have a band-shaped closed conductor region. It only has to be formed. A cavity 11 is arranged inside the surface layer conductor 3b, and the semiconductor element 9 is placed on the inner layer conductor 4 on the bottom surface thereof as described above.

  The surface layer conductor 3a and the surface layer conductor 3b are connected to the inner layer conductor 4 through a resistor-filled through hole 7 indicated by a black circle. The high-frequency current flowing through the surface layer conductor 3 a and the surface layer conductor 3 b passes through the resistor-filled through hole 7. Further, a plurality of resistor-filled through holes 7 are arranged along the inner circumference of the seal ring 2 near the seal ring 2 of the surface layer conductor 3b at positions facing each other in the surface layer conductor 3a and the surface layer conductor 3b. . The resistor-filled through holes 7 are arranged with an interval shorter than a half wavelength of the unnecessary resonance wave.

Next, the operation will be described using the TE10 mode, which is a basic resonance mode of unnecessary resonance waves.
FIG. 3 shows a current density distribution of high-frequency current generated in the package in the TE10 mode. A portion surrounded by a dotted line in FIG. 3 is a portion having a high current density. The portion where the current density corresponding to this dotted line is high is the center part of the four sides of the sealing lid 1, the center part of the four sides of the seal ring 2, the surface layer conductor 3a, and the resistor-filled through hole 7 connected to the surface layer conductor 3a. The four sides of the square-shaped conductor formed by the center portion of the four sides of the square-shaped conductor formed by the inner layer conductor 4, the surface layer conductor 3b, and the resistor-filled through hole 7 connected to the surface layer conductor 3b. In the center of each.

  The high-frequency current generated in the TE10 mode flows radially from the center of the sealing lid 1 in the direction of the seal ring 2, passes through the resistor-filled through-hole 7 through the surface layer conductor 3a in the vertical direction from the seal ring 2, and passes through the inner layer conductor. It flows to 4. Further, since the surface layer conductor 3a is separated from the surface layer conductor 3b, no high frequency current flows directly from the surface layer conductor 3a to the surface layer conductor 3b. The resistor-filled through hole 7 connecting the surface layer conductor 3a and the inner layer conductor 4 is disposed along the seal ring 2, and the resistor-filled through hole 7 is present at a location where the current density is high. High frequency current is consumed efficiently. A high-frequency current also flows on the surface layer conductor 3b, and this current is consumed by the resistor-filled through-hole 7 arranged along the seal ring 2 side of the surface layer conductor 3b.

  Here, the conductor formed by the inner layer conductor 4, the surface layer conductor 3b, and the resistor-filled through hole 7 connected to the surface layer conductor 3b also has a portion with a high current density, and is connected to the surface layer conductor 3b and the surface layer conductor 3b. By disposing the resistor-filled through hole 7 near the seal ring 2, the resistor-filled through hole 7 can be disposed at a location where the current density is higher, and high-frequency current can be consumed more efficiently.

  Thus, high-frequency current is consumed by the resistor-filled through-hole 7 connected to the surface layer conductor 3a, and further consumed efficiently in the resistor-filled through-hole 7 connected to the surface layer conductor 3b. High-frequency current can be consumed, and excellent suppression of unwanted resonance waves can be obtained.

  In the above description, the TE10 mode is used, but in the other modes as well, the conductor formed by the seal ring 2, the surface layer conductor 3a, and the resistor filled through hole 7 connected to the surface layer conductor 3a, and the inner layer conductor 4 and the surface layer conductor 3b and the conductor formed by the resistor-filled through hole 7 connected to the surface layer conductor 3b have a portion where the current density is different depending on the resonance mode, and is connected to the surface layer conductor 3a. The resistor-filled through-hole 7 and the resistor-filled through-hole 7 connected to the seal ring 2 side of the surface layer conductor 3b are also arranged at a location where the current density is high, so that high-frequency current is efficiently and effectively consumed. Can do. In addition, this configuration can be applied without depending on the package shape since a resistor is filled in a through-hole generally used in configuring the multilayer dielectric substrate 8. In addition, the sealing lid 10 can be any seal ring 2 as long as the sealing ring 2, the inner layer conductor 4, and the resistor filling through hole 7 exhibit an electromagnetic shielding effect that prevents unnecessary resonance waves from leaking outside the package. It may be a lid that is non-hermeticly joined to the upper surface portion. Similarly, the seal ring 2 may be non-hermeticly joined to the upper surface of the surface conductor 3a as long as it has an electromagnetic shielding effect for preventing unnecessary resonance waves from leaking outside the package. . Further, the sealing lid 10 and the seal ring 2 may be integrally formed lids. Further, without providing the cavity 11 for accommodating the semiconductor element 9, the semiconductor element 9 is mounted on the surface layer of the dielectric multilayer substrate 8, and the semiconductor element 9 is connected to the ground conductor provided on the surface layer of the dielectric multilayer substrate 8. May be.

  As described above, the high-frequency package 10 using this configuration can efficiently and effectively consume the high-frequency current generated by the unnecessary resonance wave with respect to the plurality of resonance modes without depending on the package shape. Therefore, it is possible to excellently suppress unnecessary resonance waves.

  As described above, the high-frequency package 10 according to Embodiment 1 is separated from the first surface layer conductor 3a and the first surface layer conductor 3a, and is disposed on the inner side of the first surface layer conductor 3a. Surface conductor 3b, a plurality of resistor-filled through holes 7 connected to the first surface conductor 3a and the second surface conductor 3b, an inner layer conductor 4 connected to the resistor-filled through hole 7, and a back conductor 5 and a dielectric multilayer substrate 8 having a plurality of metal-filled through holes 6 connecting the inner layer conductor 4 and the back conductor 5, and a semiconductor element 9 mounted thereon, and a semiconductor on the dielectric multilayer substrate 8 An inner wall (of the seal ring 2) is provided so as to surround the element 9, the inner wall is connected to the first surface layer conductor 3a, and the seal ring 2 and the sealing lid 10 that form a space inside the inner wall With a lid The second surface layer conductor 3a is arranged so as to be close to the inner wall (seal ring 2) of the lid, and the resistor-filled through-hole connecting the second surface layer conductor 3b and the inner layer conductor 4 7 is arranged near the inner wall side (seal ring 2) of the lid body in the second surface layer conductor 3b and arranged along the inner wall (seal ring 2) of the lid body.

  As a result, the second surface layer conductor 3b is arranged near the seal ring 2 where the current density of the high frequency current generated by the unnecessary resonance wave becomes higher than the unnecessary resonance wave generated in the high frequency package 10, and the second surface layer By passing a high-frequency current generated by an unnecessary resonance wave on the conductor 3b and consuming it through the resistor-filled through hole 7, the resonance energy is attenuated and the unnecessary resonance wave can be suppressed. The high-frequency package 10 has a plurality of resonance modes, and there is a portion on the second surface conductor near the seal ring 2 where the current density becomes high regardless of the resonance mode, and the high-frequency package 10 is arranged along the seal ring 2. Since the resistor-filled through hole 7 is present, the unnecessary resonance wave can be suppressed, and it is effective for a plurality of resonance modes without depending on the resonance mode. Further, in this configuration, since the above effect can be obtained by filling a through hole used in the multilayer dielectric substrate 8 with a resistor, the package shape is not restricted.

  DESCRIPTION OF SYMBOLS 1 Sealing lid, 2 Seal ring, 3a, 3b Surface layer conductor, 4 Inner layer conductor, 5 Back surface conductor, 6 Metal filling through hole, 7 Resistor filling through hole, 8 Dielectric multilayer substrate, 9 Semiconductor element, 10 High frequency package, 11 Cavity.

Claims (3)

A first surface conductor,
A second surface layer conductor separated from the first surface layer conductor and disposed inside the first surface layer conductor;
A plurality of resistor-filled through holes respectively connected to the first surface conductor and the second surface conductor;
An inner layer conductor connected to the resistor-filled through-hole,
Back conductor,
And a plurality of metal-filled through holes connecting the inner layer conductor and the back conductor,
A dielectric multilayer substrate on which a semiconductor element is mounted;
An inner wall is provided so as to surround the semiconductor element on the dielectric multilayer substrate, the inner wall is connected to the first surface layer conductor, and a lid that forms a space inside the inner wall;
With
The second surface conductor is arranged so as to be close to the inner wall of the lid,
The resistor-filled through-holes connecting the second surface layer conductor and the inner layer conductor are arranged close to the inner wall side of the lid body in the second surface layer conductor, and are arranged along the inner wall of the lid body. High frequency package. The lid is composed of a seal ring connected to the first surface layer conductor so as to surround the semiconductor element on the dielectric multilayer substrate, and a lid joined to the upper surface portion of the seal ring,
The second surface conductor is arranged along the vicinity of the seal ring,
The resistor-filled through-hole connecting the second surface layer conductor and the inner layer conductor is disposed close to the seal ring side in the second surface layer conductor, and arranged along the seal ring. The high frequency package according to claim 1. The dielectric multilayer substrate has a cavity in which a semiconductor element is accommodated,
3. The high frequency package according to claim 2, wherein the seal ring is connected to the first surface conductor so as to surround a cavity on the dielectric multilayer substrate.

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