JP2013251289A - Conveying device for surface treatment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To convey a treated substrate reliably while ensuring uniformity of surface treatment, in a conveying device for surface treatment.SOLUTION: A plurality of shafts 30 are arranged in a treatment region R of a conveying device 20 for surface treatment at intervals in the conveyance direction x, and each shaft 30 is provided with rotary supports 40. The rotary supports 40 are arranged while being distributed in the conveyance direction x and the width direction y, so that the number Nof the rotary supports 40 existing on an arbitrary segment L in the conveyance direction x within the treatment region R is equal at substantially all positions in the width direction y. A treated substrate 9 is supported by the rotary supports 40, and the rotary supports 40 are rotated about the axis of the shaft 30.

Description

  The present invention relates to a transfer apparatus for transferring a substrate to be processed in a surface treatment such as atmospheric pressure plasma treatment.

  In surface treatment technology using atmospheric pressure plasma or the like, for example, surface treatment is performed while a substrate to be treated is conveyed by a roller conveyor or a roller conveyor (see Patent Document 1). The roller conveyor has a plurality of shafts extending in the width direction orthogonal to the conveying direction. Each shaft is provided with a plurality of disk-shaped rollers spaced apart in the width direction (shaft extending direction). These roller-attached shafts are arranged at intervals in the transport direction. In general, the rollers are arranged at fixed positions in the width direction of the roller conveyor. On the substrate, regions in contact with the rollers and regions not in contact with the rollers are alternately formed in the width direction.

  The roller conveyor includes a plurality of round or long cylindrical rollers. These rollers are arranged at intervals in the transport direction. In general, the axial length of the roller is about the same as or larger than the width dimension of the substrate. Therefore, almost the entire area of the substrate comes into contact with the roller.

JP 2001-35694 A

  When the surface treatment is performed while the substrate is transported by the roller conveyor, the degree of treatment of the area that contacts the roller and the degree of treatment of the area that does not contact the roller at all tend to be different from each other. Then, processing unevenness in which the distribution of these regions is transferred is generated. For example, in the case of atmospheric pressure plasma etching of a silicon film, the etching rate in a region in contact with a roller and the etching rate in a region not in contact with a roller are different from each other, thereby causing streaky etching unevenness.

In the roller conveyor, since the entire area of the substrate is an area in contact with the roller, processing unevenness can be avoided. However, the amount of static electricity is likely to increase by the amount of contact. When the processing target is a substrate for an electronic device such as a semiconductor substrate or a liquid crystal display panel, there is a risk that electrostatic breakdown will occur and the substrate may be damaged. In addition, the roller may be bent by its own weight or the like. In particular, when the substrate size is large, bending tends to occur when the axial length of the roller is increased accordingly. When the roller bends, a non-contact portion is generated between the substrate and the roller, causing not only uneven processing but also hindering the transport function.
The present invention has been made in view of the above circumstances, and an object of the present invention is to ensure uniformity of surface treatment and reliably convey a substrate in a surface treatment transport device.

In order to solve the above problems, the present invention is a surface treatment transport apparatus for transporting a substrate to be processed in a transport direction so as to pass through a processing region where surface treatment is performed.
A plurality of shafts arranged in the processing direction at intervals in the transport direction, with the axis line oriented in the width direction orthogonal to the transport direction in the processing region,
A plurality of rotation supports provided on these shafts and supporting the substrate to be processed while rotating around the axis of each shaft;
And the number of the rotating supports (hereinafter referred to as “existing number”) existing on an arbitrary line segment along the transport direction in the processing region is the same number at almost all positions in the width direction. As described above, the plurality of rotating supports are arranged in a distributed manner in the transport direction and the width direction.

As a result, the following effects can be obtained.
1) Improvement of processing uniformity Almost all the portions of the substrate to be processed are in contact with the rotating support for the same number of times as the existence number. Therefore, the etching amount is the same over substantially the entire area to be processed. As a result, the surface of the substrate to be processed can be uniformly treated, and uneven processing can be prevented.
2) Ensuring the transport function The length of each rotary support in the width direction can be shortened. In addition, the rotating support can be reduced in weight as compared with a round bar-like roller having substantially the same length as the shaft. Therefore, it is possible to prevent the rotating support body from being bent by its own weight. Furthermore, an intermediate support part can be provided in the intermediate part of the shaft. Thereby, it is possible to reliably suppress the shaft from being bent. Therefore, the transfer function of the transfer device can be ensured, and further the transfer accuracy can be ensured.
3) Suppression of electrostatic charging Compared with a round bar roller having substantially the same length as the shaft, the contact portion with the substrate can be reduced. Accordingly, electrostatic charging can be suppressed. Therefore, when the substrate is a substrate including a conductive element such as a semiconductor substrate or a liquid crystal display panel, the conductive element can be prevented from being damaged by dielectric breakdown.

  An end on the first side in the width direction of each rotation support (hereinafter referred to as “first rotation support”) is another rotation support (hereinafter referred to as “second rotation support”) separated in the transport direction. It is preferable that the end of the second side opposite to the first side in the width direction is arranged at the same position in the width direction. Thereby, all the parts of the to-be-processed part of the said substrate can contact with at least 1 rotation support body, and it can prevent that the part which does not contact at all with a rotation support body does not arise. On the line segment passing through the same position among the line segments, the number of the rotational support bodies is exceptionally large. By making the width of this exceptional part sufficiently small, the uniformity of processing can be reliably improved.

  Furthermore, it is preferable that an intermediate portion in the width direction of another rotation support (hereinafter referred to as “third rotation support”) is disposed at the same position in the width direction. The third rotation support is separated from the first rotation support and the second rotation support in the transport direction. The third rotation support member straddles the first side portion of the first rotation support member and the second side portion of the second rotation support member when viewed from the transport direction. Therefore, it is possible to reliably eliminate the formation of a portion that does not come into contact with the rotary support in the portion to be processed of the substrate.

  The distance between the opposing ends of two rotation supports adjacent to each other in the width direction among the plurality of rotation supports is an integral number times or an integral multiple of the length of each rotation support in the width direction. It is preferable. By doing so, it becomes easy to disperse and arrange the plurality of rotating supports so that the number of existence becomes the same number at almost all positions in the width direction. The integer is preferably 1 or more and less than the number of the shafts in the processing region.

  It is preferable that two rotation supports adjacent to each other in the transport direction among the plurality of rotation supports are shifted in the width direction by an integral number of a length of the width direction of each rotation support. . By doing so, it becomes easy to disperse and arrange the plurality of rotating supports so that the number of existence becomes the same number at almost all positions in the width direction. The integer is preferably 1 or more and less than the number of the shafts in the processing region.

The rotary support is preferably a cylindrical roller. The rollers are coaxially attached to the corresponding shafts. The axial length (the dimension in the width direction) of the roller may be larger or smaller than the diameter of the roller.
The rotating support is not limited to a roller. The rotary support may include a pair of rotary bodies that are separated from each other in the transport direction, and an endless belt that is looped between the rotary bodies.

The surface treatment is preferably performed near atmospheric pressure. For example, the processing gas is turned into plasma near atmospheric pressure and brought into contact with the substrate to be processed. Here, the vicinity of atmospheric pressure (substantially atmospheric pressure) refers to a range of 1.013 × 10 ^{4 to} 50.663 × 10 ⁴ Pa, and considering the ease of pressure adjustment and the simplification of the apparatus configuration, 333 × 10 ^{4 to} 10.664 × 10 ⁴ Pa are preferable, and 9.331 × 10 ^{4 to} 10.9797 × 10 ⁴ Pa are more preferable.

  According to the present invention, the uniformity of the surface treatment can be ensured and the substrate to be processed can be reliably conveyed.

It is a top view which shows the surface treatment apparatus which concerns on 1st Embodiment of this invention, and follows the II line | wire of FIG. It is a side view of the said surface treatment apparatus which follows the II-II line of FIG. It is a front view which shows the aspect which provided the intermediate support body in the shaft of the said surface treatment apparatus. It is a top view which shows the surface treatment apparatus which concerns on 2nd Embodiment of this invention. It is a top view which shows the surface treatment apparatus which concerns on 3rd Embodiment of this invention. It is a top view which shows the surface treatment apparatus which concerns on 4th Embodiment of this invention. It is a perspective view of the shaft of the said 4th Embodiment, and a rotation support body.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
1 and 2 show a first embodiment of the present invention. The substrate 9 to be processed is a glass substrate for a liquid crystal display panel, for example. As shown by a two-dot chain line in FIG. 1, the substrate 9 to be processed has a rectangular flat plate shape. A silicon-containing film 9 f is coated on the surface of the substrate 9. The silicon-containing film 9f is subjected to plasma etching near the atmospheric pressure by the surface treatment apparatus 1.

The silicon-containing film 9f is made of, for example, amorphous silicon (a-Si), but is not limited thereto, and may be single crystal silicon or polysilicon. Further, the silicon-containing film 9f is not limited to silicon (Si) alone, but silicon oxide (SiO ₂ ), silicon nitride (SiNx), silicon carbide (SiC), silicon oxynitride (SiON), silicon oxide carbide (SiOC), It may be composed of a silicon compound such as silicon carbonitride (SiCN).

  As shown in FIG. 2, the surface treatment apparatus 1 includes treatment gas supply sources 2 and 4, a treatment tank 3, a treatment head 10, and a surface treatment transport device 20.

The processing gas supply sources 2 and 4 supply a processing gas corresponding to the surface processing content to the processing head 10. For example, when silicon such as amorphous silicon or polysilicon is subjected to plasma etching, the processing gas preferably contains a fluorine-based reaction component and an oxidizing reaction component as target substances. Examples of the fluorine-based reaction component include HF, COF ₂ , OF ₂ , and O ₂ F ₂ . Examples of the oxidizing reaction component include O ₃ as well as O ₃ .

The fluorine-based processing gas supply source 2 stores a fluorine-containing component, a dilution component, and a hydrogen-containing additive component as raw material components of the fluorine-based reaction component. The oxidizing process gas supply source 4 is configured by, for example, an ozonizer. The ozonizer 4 generates O ₃ as an oxidizing reaction component using O ₂ as a raw material.

Examples of the fluorine-containing component include PFC (perfluorocarbon) such as CF ₄ , C ₂ F ₆ , C ₃ F ₈ , and C ₃ F ₈ , and HFC (hydrofluorocarbon) such as CHF ₃ , CH ₂ F ₂ , and CH ₃ F. Is mentioned. Furthermore, as the fluorine-containing _component, it may be used _{SF 6, NF 3, XeF 2} , F 2 and the like. Here, for example, CF ₄ is used as the fluorine-containing component.

As the diluent component, Ar, He, Ne, other rare gases Kr, etc., include inert gas such as _{N 2.} In addition to the role of diluting the fluorine-containing component, the dilution component plays a role as a carrier gas and a gas for plasma generation. Here, Ar is used as a dilution component.

As the hydrogen-containing additive component, H ₂ O (water vapor) is preferably used. Instead of H ₂ O, an OH group-containing compound, hydrogen peroxide, or the like may be used. Examples of the OH group-containing compound include alcohol.

Usually, the hydrogen-containing additive component (H ₂ O) is stored in a tank in a liquid state. A fluorine-based processing gas (CF ₄ + Ar) obtained by diluting a fluorine-containing component with a diluent component may be bubbled into the liquid in the tank, and the saturated vapor above the liquid surface is used as the processing gas (CF ₄ + Ar). ). This allows addition of vapor of hydrogen-containing additive component (H 2 _O) in a fluorine-based process gas. By adjusting the temperature of the tank, the vapor pressure of the hydrogen-containing additive component (H ₂ O) and thus the addition amount can be adjusted. Alternatively, a part of the processing gas is introduced into the tank, the remaining part bypasses the tank, and the flow rate ratio between the part and the remaining part is adjusted, so that the addition amount of the hydrogen-containing additive component (H ₂ O) is increased. You may adjust.

  As shown in FIG. 2, the processing tank 3 is provided with a carry-in port 3a and a carry-out port 3b. The substrate 9 to be processed is carried into the treatment tank 3 from the carry-in port 3a, is carried along the x direction (the left-right direction in FIG. 2) in the treatment tank 3, and is carried out from the carry-out port 3b. The inside of the processing tank 3 is at substantially atmospheric pressure.

  As shown in FIG. 2, the processing head 10 and the transfer device 20 are accommodated in the processing tank 3. The processing head 10 includes a plasma generation unit 11 and a nozzle unit 13.

Although detailed illustration is omitted, the plasma generation unit 11 includes at least a pair of electrodes. A solid dielectric layer is provided on at least one opposing surface of the pair of electrodes. A supply path 2 a from the processing gas supply source 2 is connected to the plasma generation unit 11. By applying, for example, a pulsed high-frequency electric field between the pair of electrodes, a glow discharge in the vicinity of atmospheric pressure is generated between the electrodes. A processing gas from the supply source 2 is introduced into the discharge space between the electrodes. Accordingly, the processing gas can be converted into plasma (including decomposition, excitation, radicalization, and ionization) to impart reactivity. For example, in the etching process of the silicon-containing film 9f, a fluorine-based reaction component such as HF or COF ₂ can be generated by converting the fluorine-based processing gas (CF ₄ + H ₂ O + Ar) into plasma.
The plasma generation unit 11 may be provided in the processing gas supply source 2 instead of the processing head 10.

Further, the ozone-containing gas from the ozonizer 4 is introduced into the processing head 10 through the supply path 4a and mixed with the plasma-processed fluorine-based processing gas.
Alternatively, oxidizing reaction components such as O ₃ and O radicals may be generated by introducing O ₂ into the plasma generation unit 11 from the processing gas supply source 2 to generate plasma.

  As shown in FIG. 2, the lower portion of the processing head 10 is a nozzle portion 13. As shown by a two-dot chain line in FIG. 1, the nozzle portion 13 has the short side direction in the transport direction (x direction) and the longitudinal direction in the width direction (y direction) perpendicular to the transport direction. It is arranged directly above the transport path. Although not shown, a gas homogenizer is provided inside the nozzle portion 13. The gas homogenizer includes a chamber extending in the y direction, slits extending in the y direction, and a large number of small holes arranged in the y direction. The processing gas is uniformly diffused in the y direction (width direction) by passing through the chamber, slits, and a large number of small holes in the gas uniformizing unit.

  As shown in the two-dot chain line in FIG. 1 and FIG. 2, the air outlet 11 and the suction port 12 are formed on the bottom surface (processing area defining surface) of the nozzle portion 13. For example, the blower outlet 11 is arrange | positioned in the center part of the x direction of the bottom face of the nozzle part 13. As shown in FIG. A pair of suction ports 12 are arranged at both ends in the x direction on the bottom surface of the nozzle portion 13. The blower outlet 11 and the suction opening 12 are each slit-shaped extending in the y direction. The lengths in the y direction of the air outlet 11 and the suction port 12 are substantially the same as or slightly larger than the width dimension along the y direction of the substrate 9 to be processed. A processing gas is blown out from the blowout port 11. The treated gas is sucked from the suction port 12.

  The shape, number, arrangement, and the like of the air outlet 11 and the suction port 12 are not limited to the above and can be set as appropriate. The blower outlet 11 may be configured by a large number of small holes arranged in the y direction. The suction port 12 may be configured by a large number of small holes arranged in the y direction. Only one blowout port 11 and one suction port 12 may be provided on the bottom surface of the processing head 10. A plurality or a plurality of air outlets 11 and suction ports 12 may be provided side by side in the x direction. The gas is not limited to mixing the fluorine-based processing gas that has passed through the plasma generation unit 11 from the supply source 2 and the ozone-containing gas from the ozonizer 4 and blowing them out from the common outlet 11. May be.

  When the substrate 9 to be processed is located below the nozzle portion 13, the distance (working distance WD) between the bottom surface of the nozzle portion 13 and the top surface of the substrate 9 to be processed is less than 1 mm to several tens of mm. Preferably, WD = 3 mm to 10 mm. The bottom surface of the nozzle unit 13 defines a processing region R in cooperation with the substrate 9 or the transfer device 20. The processing region R refers to a region where a processing reaction such as etching occurs when the processing gas comes into contact with the processing substrate 9 when the processing substrate 9 is disposed therein. In FIG. 1, the four corners of the processing region R are indicated by thick two-dot chain lines. In this embodiment, the position of the pair of suction ports 12 and the both ends of the processing region R in the x direction coincide with each other. The positions of both ends in the y direction of the substrate to be processed 9 when the substrate to be processed 9 is directly below the nozzle portion 13 coincide with both ends in the y direction of the processing region R.

  As shown in FIGS. 1 and 2, a conveying device 20 is installed below the processing head 10. The transport device 20 includes a pair of mounts 21 and 22, a large number (plurality) of shafts 30 and 34, and a large number (plurality) of rollers 40 and 44 (rotation support).

  As illustrated in FIG. 1, the gantry 21 is provided at an end portion on the first side in the y direction of the transport device 20 and extends in the x direction. The gantry 22 is provided at the end of the transport device 20 on the second side opposite to the first side in the y direction, and extends in the x direction.

  The shafts 30 and 34 are bridged between the gantry 21 and 22 with their axes directed in the y direction. A plurality of shafts 30 and 34 are aligned with each other at an interval in the x direction. The in-region shaft 30 is disposed inside the processing region R. The out-of-region shaft 34 is disposed outside the processing region R in the x direction.

  Although illustration is omitted, a transmission mechanism is provided on at least one of the bases 21 and 22. The transmission mechanism includes a belt and pulley mechanism, a gear mechanism, and the like. Each shaft 30 and 34 is connected to the drive part via the transmission mechanism. The drive part is comprised by the motor, for example. The driving force of the driving unit is transmitted to the shafts 30 and 34 via the transmission mechanism. The shafts 30 and 34 rotate around their respective axes and in synchronization with each other.

  On each shaft 34 outside the processing region R, a plurality of outer region rollers 44 are provided at intervals in the y direction. The roller 44 has a disk shape coaxial with the shaft 34 or a cylindrical shape with a short axial length. The outermost roller 44 in the y direction is provided with a flange 45 for positioning the substrate 9 to be processed in the y direction. The roller 44 rotates together with the shaft 34.

The number N ₃₀ of shafts 30 in the processing region R (hereinafter referred to as “number of axes N ₃₀ ”) is N ₃₀ = 4 in this embodiment, but may be N ₃₀ = 2 or N ₃₀ = 3, and N ₃₀ ≧ 5 may be acceptable. Each shaft 30 is provided with a plurality of in-region rollers 40 at intervals in the y direction. The roller 40 has a cylindrical shape coaxial with the shaft 30. The axial length w (length in the y direction) of the roller 40 is several times larger than the diameter. The axial length w of the roller 40 is about a fraction of the axial length of the shaft 30 and is sufficiently short. A protective layer having corrosion resistance against reaction components in the processing gas and plasma may be coated on the outer peripheral surface of the roller 40. As a component of a protective layer, fluorine-type resins, such as Teflon (trademark), are mentioned, for example.

The roller 40 constitutes a rotary support that supports the substrate 9 to be processed in the processing region R. Between the two adjacent rollers 40 of each shaft 30 is a non-supporting portion 39 that does not contact the substrate 9 to be processed. As the shaft 30 rotates, the roller 40 rotates integrally with the shaft 30 around its axis.
The substrate 9 to be processed is supported on the rollers 40 and 44. And the to-be-processed substrate 9 is conveyed along the x direction by rotation of the rollers 40 and 44.

As shown in FIG. 1, when a line segment L along the x direction is drawn at an arbitrary position in the y direction within the processing region R, the number N _{40 of} rollers 40 on the line segment L (hereinafter “existence number N”). ₄₀ ”) are equal to each other at almost all positions in the y direction. That is, the rollers 40 in the processing region R are distributed in the x direction and the y direction so that the number N ₄₀ existing on an arbitrary line segment L is the same number at almost all positions in the y direction. ing. The existence number N ₄₀ is 1 or more and less than the axis number N ₃₀ (1 ≦ N ₄₀ <N ₃₀ ). The difference between the number N _{30 of} axes and the number N ₄₀ (N ₃₀ −N ₄₀ ) is the number of non-supporting portions 39 present on the arbitrary line segment L. The existence number N ₄₀ in the first embodiment is N ₄₀ = 3 at almost all positions in the y direction in the processing region R. The number of the non-supporting portions 39 on the arbitrary line segment L is one (= N ₃₀ −N ₄₀ ) at almost all the positions in the y direction in the processing region R.

As shown in FIG. 1, the first side shaft end (end in the y direction) of each roller 40 in the processing region R is in the y direction with the second side shaft end of another roller 40 separated in the x direction. Arranged at the same position. Furthermore, the middle part of another roller 40 in the y direction is arranged at the same position in the y direction. That is, the first side end of one roller 40 (hereinafter referred to as “first roller 40A”) and the second side end of another roller 40 (hereinafter referred to as “second roller 40B”) are both located on a predetermined line segment L ₀ of the line segment L. This line segment L ₀ intersects with an intermediate portion of another roller 40 (hereinafter referred to as “third roller 40C”). The first to third rollers 40A, 40B, and 40C are separated from each other in the x direction. The third roller 40C straddles the first side portion of the first roller 40A and the second side portion of the second roller B as viewed from the x direction. The roller existence number N ₄₀ is an exceptional value only on the line segment L ₀ . In the first embodiment, the roller existence number N ₄₀ on the line segment L ₀ is not N ₄₀ = 3 but exceptionally N ₄₀ = 4. And, the number of non-supported part 39 on the line L ₀ is an exception to 0.

The distance d between the opposing ends of the two rollers 40 adjacent to each other on the shaft 30 in the processing region R in the y direction is 1 / m times the axial length w of each roller 40.
w × (1 / m) = d (Formula 1)
Here, m is an integer of 1 or more and less than the number of axes N ₃₀ (1 ≦ m <N ₃₀ ). The distance d between the opposing ends in the first embodiment is one third of the axial length w of each roller 40. That is, in Equation 1, m = 3.

The rollers 40, 40 of the two shafts 30, 30 adjacent to each other in the x direction are shifted in the y direction by 1 / n times the axial length w of each roller 40. If this shift amount is s,
w × (1 / n) = s (Formula 2)
It becomes. Here, n is an integer of 1 or more and less than the number of axes N ₃₀ (1 ≦ n <N ₃₀ ). The shift amount s in the first embodiment is one third of the axial length w of each roller 40. That is, n = 3 in Equation 2. Therefore, m = n. The shift amount s coincides with the distance d between the opposed ends (s = d).

A method for surface-treating the substrate 9 to be processed by the surface treatment apparatus 1 configured as described above will be described.
Support process and conveyance process The drive part of the conveyance apparatus 20 is driven, the shafts 30 and 34 are rotated, and the rollers 40 and 44 are rotated. The substrate 9 to be processed is carried into the treatment tank 3 from the carry-in port 3 a and placed on the rollers 40 and 44. The substrate 9 to be processed is supported horizontally by the rollers 40 and 44. By the rotation of the rollers 40 and 44, the substrate 9 to be processed can be transported in the x direction. The substrate 9 to be processed crosses the processing region R below the processing head 10 in the x direction.

Processing Step Fluorine-based processing gas (CF ₄ + H ₂ O + Ar) is converted into plasma in the plasma generation unit 11 and ozone-containing gas is mixed. This processing gas is made uniform in the y direction in the gas homogenizing part in the nozzle part 13, and then blown out from the outlet 11 into the processing region R. The processing gas flows toward the suction port 12 in the processing region R between the nozzle unit 13 and the substrate 9 to be processed. The flow of processing gas and the flow in the processing region R are uniformly distributed in the y direction. This processing gas comes into contact with the substrate 9 to be processed, and a reaction component in the processing gas causes an etching reaction with the silicon-containing film 9f of the substrate 9 to be processed. Specifically, silicon is oxidized by O ₃ (oxidative reaction component) in the processing gas. In addition, silicon oxide is converted into a volatile component such as SiF _{4 by} a fluorine-based reaction component such as HF in the processing gas. As a result, the silicon-containing film 9f can be etched. The treated gas is sucked from the suction port 12 and exhausted.

The etching rate (degree of treatment) of the silicon-containing film 9f is different between the place other than the roll 40 in the treatment region R and on the roll 40. On the other hand, when the substrate to be processed 9 passes through the entire processing region R in the x direction, almost all the portions of the substrate to be processed 9 come into contact with the rollers 40 as many times as the number N _{40 of} existence. That is, in this embodiment, almost all portions of the substrate 9 to be processed are in contact with the roller 40 three times.
The second side of the shaft end of the roller 40 (first roller 40A) another roller 40 is on the line segment L ₀ passing through the first side of the shaft end of the (second roller 40B) in the processing region R is disposed Therefore, it is possible to avoid that all the portions of the substrate 9 can be in contact with at least one roller 40 and a portion that is not in contact with the roller 40 at all can be formed. And since the intermediate part of another roller 40 (3rd roller 40C) cross | intersects the said line segment L0, it can eliminate reliably that the location which does not contact the roller 40 at all on the board | substrate 9 is made.
In the portion corresponding to the line segment L ₀ contacts 4 times with exceptionally roller 40, this y-direction width of exception points is sufficiently small, it is substantially zero.
Therefore, the etching amount in the entire processing period is the same over the entire area of the substrate 9 to be processed. Thereby, the to-be-processed substrate 9 can be uniformly etched, and processing unevenness can be prevented.

The substrate 9 that has been subjected to the unloading process is unloaded from the unloading port 3b.

  According to the surface treatment apparatus 1, for example, since the substrate 9 to be processed is large, the axial length w of each roller 40 even when the distance between the bases 21 and 22 and the axial length of the shaft 30 have to be set large. Is about a fraction of the axial length of the shaft 30. Therefore, it is possible to prevent the roller 40 from being bent by its own weight or the like. In addition, compared to a rotating support made of a round bar roller having substantially the same length as the shaft 30, the rotating support is thinned at a position corresponding to the non-supporting portion 39, and the entire rotating support is reduced in weight. it can.

  Furthermore, as shown in FIG. 3, an intermediate support portion 25 can be provided between the adjacent rollers 40 in the intermediate portion of the shaft 30. Then, the shaft 30 can be supported not only by the gantry 21 and 22 at both ends but also by the intermediate support portion 25. Therefore, it is possible to reliably suppress the bending of the shaft 30 and to secure the transport function and thus the transport accuracy.

  Further, as compared with a rotating support made of a round bar roller having substantially the same length as the shaft 30, the contact portion with the substrate 9 can be reduced by the amount of thinning of the rotating support. Accordingly, electrostatic charging can be suppressed. Therefore, it is possible to avoid the conductive element of the glass substrate 9 for the liquid crystal display panel from being damaged due to dielectric breakdown.

Next, another embodiment of the present invention will be described. In the following embodiments, the same reference numerals are given to the drawings for the same configurations as those already described, and the description thereof is omitted.
FIG. 4 shows a second embodiment of the present invention. The roller 40 in the processing region R of the second embodiment has an axial length w (dimension in the y direction) shorter than that of the roller 40 of the first embodiment and is substantially the same as the diameter. A plurality of rollers 40 are arranged in a checkered pattern in the x direction and the y direction.

  The distance d between the opposing ends of the two rollers 40 adjacent to each other in the y direction on each shaft 30 is exactly one time the axial length w of each roller 40. Therefore, m = 1 in Equation 1. The rollers 40 of the two shafts 30 and 30 adjacent to each other in the x direction are displaced in the y direction by exactly one axial length w of each roller 40. Therefore, n = 1 in Equation 2. The shift amount s is equal to the axial length w of the roller 40 and the distance d between the opposed ends (s = w = d). The first side shaft end (end in the y direction) of each roller 40 is located at the same position in the y direction as the second end shaft end of another roller 40 separated in the x direction.

The existence number N ₄₀ of the rollers 40 existing on an arbitrary line segment L along the x direction in the processing region R is the same number at almost all positions in the y direction, and N ₄₀ = 2. Only on the line segment L ₀ passing through the axial end of each roller 40 is exceptionally N ₄₀ = 4. The number of non-supporting portions 39 on the arbitrary line segment L is two (= N ₃₀ −N ₄₀ ) at almost all positions in the y direction in the processing region R. Only on the line L _0, the number of non-supported part 39 is exceptionally zero.

In the second embodiment, when the substrate to be processed 9 passes through the entire processing region R in the x direction, almost all the portions of the substrate to be processed 9 come into contact with the rollers 40 twice. The exceptional part corresponding to the line segment L ₀ contacts the roller 40 four times, but the width of the exceptional part in the y direction is sufficiently small and substantially zero. Therefore, in the second embodiment, the etching amount is the same over the entire area of the substrate 9 to be processed, as in the first embodiment. Thereby, the to-be-processed substrate 9 can be uniformly etched, and processing unevenness can be prevented.

As shown in FIG. 5, the distance d between the opposing ends of two rollers 40 adjacent to each other on the shaft 30 in the processing region R in the y direction may be larger than the axial length w of each roller 40. The distance d between the opposing ends may be m times instead of 1 / m times the axial length w of each roller 40.
w × m = d (Formula 3)
In the third embodiment shown in FIG. 5, the distance d between the opposed ends is three times the axial length of each roller 40. That is, in Equation 3, m = 3. The axial length of the roller 40 is shorter than the diameter.

The rollers 40 of the two shafts 30 and 30 adjacent in the x direction are shifted in the y direction by exactly one axial length of each roller 40. That is, n = 1 in Equation 2. Therefore, m ≠ n. One of the rollers 40, 40 has a first side shaft end arranged at the same position in the y direction (on the line segment L ₀ ) as the second side shaft end of the other roller 40.

The number N ₄₀ of rollers 40 on an arbitrary line segment L along the x direction in the processing region R is the same number at almost all positions in the y direction, and N ₄₀ = 1. Only on the line segment L ₀ that passes through the axial end of each roller 40 is exceptionally N ₄₀ = 2. The number of the non-supporting portions 39 on the arbitrary line segment L is three (= N ₃₀ −N ₄₀ ) at almost all the positions in the y direction in the processing region R. Only on the line L _0, the number of non-supported part 39 is two exceptionally.

In the third embodiment, when the substrate 9 to be processed passes through the entire processing region R in the x direction, almost all the portions of the substrate 9 to be contacted with the roller 40 only once. The exceptional part corresponding to the line segment L ₀ contacts the roller 40 twice, but the width of the exceptional part in the y direction is sufficiently small and substantially zero. Therefore, also in the third embodiment, the etching amount is the same over the entire area of the substrate 9 to be processed. Thereby, the to-be-processed substrate 9 can be uniformly etched, and processing unevenness can be prevented.

  The rotating support is not limited to a roller or a roller. 6 and 7 show a fourth embodiment of the present invention. In the fourth embodiment, a rotation support body 50 is bridged between two (a pair of) adjacent shafts 30 in the processing region R. Four pairs of shafts are constituted by the eight shafts 30 arranged in the x direction. A plurality of rotary supports 50 are provided on the two shafts 30, 30 that make a pair with a gap in the y direction.

  Each rotary support 50 includes a pair of cylindrical rotary bodies 51 and 51 and an endless belt 52. The rotating body 51 is coaxially attached to the corresponding shaft 30. A pair of rotating bodies 51, 51 are arranged in parallel in a separated manner in the x direction. An endless belt 52 is wound around the pair of rotating bodies 51 and 52. As the shafts 30 and 30 rotate, the pair of rotating bodies 51 and 51 rotate synchronously. As a result, the endless belt 52 circulates and rotates between the rotating bodies 51 and 51. The upper surface of the endless belt 52 is flat. The substrate 9 to be processed is placed on the endless belt 52 and conveyed.

  The rotary supports 50 are arranged in a distributed manner in the x direction and the y direction of the processing region R. The distance d between the opposed ends of the endless belts 52, 52 of the rotation supports 50, 50 adjacent to each other in the y direction and the width dimension w along the y direction of each endless belt 52 have the relationship of Formula 1 or Formula 3. Fulfill. The displacement amount s in the y direction between the rotation supports 50 adjacent to each other in the x direction and the width dimension w of each endless belt 52 satisfy the relationship of Equation 2.

  Here, the rotation support body 50 is arranged in a checkered pattern in the x direction and the y direction, like the roller 40 of the second embodiment (FIG. 4). The distance d between the opposed ends is exactly one time the width dimension w. Therefore, in Formula 1 or Formula 3, m = 1.

  The shift amount s is exactly one time the width dimension w. Therefore, in Equation 2, n = 1. The shift amount s is equal to the width dimension w and the distance d between the opposed ends (s = w = d). The end on the first side of the endless belt 52 of each rotation support 50 is arranged at the same position in the y direction as the end on the second side of the endless belt 52 of another rotation support 50 separated in the x direction. .

The number N ₅₀ of the rotational support members 50 existing on an arbitrary line segment L along the x direction in the processing region R is the same number at almost all positions in the y direction. In this embodiment, N ₅₀ = 2. Only on the line segment L ₀ that passes through the end of each endless belt 52 in the width direction, exceptionally N ₅₀ = 4.

In the fourth embodiment, when the substrate 9 to be processed passes through the entire processing region R in the x direction, almost all portions of the substrate 9 to be processed come into contact with the two endless belts 52. In exceptional location corresponding to the line segment L ₀ in contact with the four endless belts 52, but the width of the y direction of the exception point is sufficiently small substantially zero. Therefore, also in the fourth embodiment, the etching amount is the same over the entire area of the substrate 9 to be processed. Thereby, the to-be-processed substrate 9 can be uniformly etched, and processing unevenness can be prevented.

The present invention is not limited to the above-described embodiment, and various modifications can be made without changing the gist of the invention.
For example, the number of rotation supports 40 and 50 provided on each shaft 30 is not limited to a plurality (two or more), and may be only one. In this case, the width w in the y direction of the rotary supports 40 and 50 may be about half the axial length of the shaft 30.
It is not necessary that the y-direction dimensions and arrangement intervals of the plurality of rotary supports 40 and 50 are the same. Depending on the location, the size in the y direction or the arrangement interval of the rotary supports 40 and 50 may be different. The plurality of rotary supports ₄₀ and ₅₀ need only be arranged such that at least the numbers N ₄₀ and N ₅₀ existing on an arbitrary line segment L are equal to each other at almost all positions in the y direction. The arrangement relationship of Formulas 1 to 3 may not be satisfied.

The arrangement relationship of the present invention may be applied not only to the in-region rotation supports 40 and 50 but also to the out-of-region rotation supports 44 and 54. Rotating supports 40, 44, or 50 so that the number of rotating supports present on an arbitrary line segment along the transport direction x is the same as that of the entire processing tank 3 at almost all positions in the width direction y. , 54 may be distributed.
The intermediate support portion 25 may be provided also in the intermediate portion of the out-of-region shaft 34.
The intermediate support part 25 is not limited to one place in the middle of the shafts 30 and 34, and may be provided at a plurality of places at intervals in the y direction.
A flange 45 that positions the substrate 9 in the y direction may also be provided in the inner rollers 40 at both ends in the y direction.

The processing gas may flow to the edge of the nozzle portion 13 in the x direction. In this case, the end of the processing region R in the x direction coincides with the end edge of the nozzle portion 13 in the x direction. The processing gas may extend to the edge of the nozzle portion 13 in the y direction. In this case, the end of the processing region R in the y direction coincides with the end edge of the nozzle portion 13 in the y direction.
A portion to be processed on the surface of the substrate 9 is not limited to the entire area of the substrate 9 and may be a part of the substrate 9. For example, the peripheral portion of the substrate 9 may not be a portion to be processed, and only the portion inside the peripheral portion may be the portion to be processed. In that case, it is sufficient that at least the rotary support corresponding to the portion to be processed has the arrangement relationship of the present invention. In this case, the end portion in the y direction of the processing region R coincides with the position of the end portion in the y direction of the portion to be processed of the substrate 9.

A plurality of embodiments may be combined. For example, in the second to fourth embodiments (FIGS. 4 to 7), the intermediate support portion 25 may be provided in the intermediate portion of the shaft 30. The rotation support 50 of the fourth embodiment (FIGS. 6 and 7) is w × (1/3) = d and w × (1/3) = s as in the first embodiment (FIG. 1). It may be arranged so that w × 3 = d and w = s as in the third embodiment (FIG. 5). Of course, as described above, the arrangement of the rotary supports 50 is not limited to these embodiments as long as the number N ₅₀ existing on the line segment L is the same number at almost all positions in the width direction y. .

The substrate 9 is not limited to moving in one direction so as to cross the processing region R in the transport direction, and may be reciprocated or may be reciprocated a plurality of times.
The conveyance path of the substrate 9 by the conveyance device 20 is not limited to a straight line, and may be curved or bent. When the conveyance path is curved or bent, the conveyance direction and the width direction vary depending on the location on the conveyance path.
The substrate 9 to be processed is not limited to a glass substrate, and may be a semiconductor wafer, a resin film, or the like.
The content of the surface treatment of the present invention is not limited to etching, and may be film formation, cleaning, ashing, surface modification (including hydrophilicity and water repellency), and the like. The treatment is not limited to the vicinity of the atmospheric pressure, and may be a treatment under a low pressure (vacuum) or a treatment under a pressure higher than the atmospheric pressure. The treatment is not limited to plasma treatment, and treatment other than plasma such as hydrofluoric acid vapor or thermal CVD may be used.

  The present invention can be applied to the manufacture of flat panel displays such as liquid crystal displays.

DESCRIPTION OF SYMBOLS 1 Surface treatment apparatus 2 Fluorine processing gas supply source 2a Supply path 3 Processing tank 3a Carry-in port 3b Carry-out port 4 Ozonizer (oxidizing process gas supply source)
4a Supply path 9 Substrate 9f Silicon-containing film (film to be processed)
DESCRIPTION OF SYMBOLS 10 Processing head 11 Air outlet 12 Suction port 20 Surface treatment conveyance apparatus 21 1st side mount frame 22 2nd side mount frame 25 Intermediate support part 30 Inner process area shaft 34 Out process area shaft 39 Non-support part 40 Roller (rotation support) body)
44 Out-of-process area roller 45 Flange 50 Rotating support 51 Rotating body 52 Endless belt d Distance L between opposing ends Line segment L along the transport direction Line segment where the number of existing lines ₀ is an exception R Process region x Transport direction y Width direction

Claims (7)

A surface treatment transport apparatus for transporting a substrate to be processed in a transport direction so as to pass through a processing region where surface treatment is performed,
A plurality of shafts arranged in the processing direction at intervals in the transport direction, with the axis line oriented in the width direction orthogonal to the transport direction in the processing region,
A plurality of rotation supports provided on these shafts and supporting the substrate to be processed while rotating around the axis of each shaft;
The plurality of rotating supports are arranged so that the number of the rotating supports existing on an arbitrary line segment along the transport direction in the processing region is the same as the number of the rotating supports in almost all positions in the width direction. A transport apparatus for surface treatment, wherein the transport apparatus is distributed in the transport direction and the width direction.   An end on the first side in the width direction of each rotary support is a second end opposite to the first side in the width direction of another rotary support separated in the transport direction, and the width. The surface treatment transport device according to claim 1, wherein the surface treatment transport device is disposed at the same position in the direction.   The transport apparatus for surface treatment according to claim 2, wherein an intermediate portion in the width direction of another rotating support is disposed at the same position in the width direction.   The distance between the opposing ends of two rotation supports adjacent to each other in the width direction among the plurality of rotation supports is an integral number times or an integral multiple of the length of each rotation support in the width direction. The conveyance device for surface treatment according to any one of claims 1 to 3.   Two rotation supports adjacent to each other in the transport direction among the plurality of rotation supports are shifted in the width direction by an integral number of a length of the width direction of each rotation support. The transfer device for surface treatment according to any one of claims 1 to 4.   The surface treatment transport apparatus according to claim 1, wherein the rotary support is a cylindrical roller.   The rotating support body includes a pair of rotating bodies separated from each other in the conveying direction, and an endless belt wound around the rotating bodies. The conveying apparatus for surface treatment as described.

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