JP2013236069A5 - Method for manufacturing display device - Google Patents
Method for manufacturing display device Download PDFInfo
- Publication number
- JP2013236069A5 JP2013236069A5 JP2013080908A JP2013080908A JP2013236069A5 JP 2013236069 A5 JP2013236069 A5 JP 2013236069A5 JP 2013080908 A JP2013080908 A JP 2013080908A JP 2013080908 A JP2013080908 A JP 2013080908A JP 2013236069 A5 JP2013236069 A5 JP 2013236069A5
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- layer
- wiring layer
- opening
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims 5
- 238000004519 manufacturing process Methods 0.000 title claims 4
- 239000010410 layer Substances 0.000 claims 19
- 239000004065 semiconductor Substances 0.000 claims 5
- 239000011229 interlayer Substances 0.000 claims 3
- 238000004587 chromatography analysis Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 1
Claims (4)
前記ゲート配線上及び前記第1の配線層上に、ゲート絶縁膜を形成する第2の工程と、
前記ゲート絶縁膜を介した前記ゲート配線上及び前記第1の配線層上に、半導体層を形成する第3の工程と、
前記ゲート絶縁膜上及び前記半導体層上に、画素部のソース配線、ドレイン配線及び駆動回路部の第2の配線層を形成する第4の工程と、
前記ゲート絶縁膜上、前記半導体層上、前記ソース配線上、前記ドレイン配線上及び前記第2の配線層上に層間絶縁膜を設け、前記第1の配線層上及び前記第2の配線層上の前記層間絶縁膜に第1の開口部を形成し、前記ドレイン配線上の前記層間絶縁膜に第2の開口部を形成する第5の工程と、
前記第1の開口部において、前記第1の配線層及び前記第2の配線層を分断し、前記駆動回路部のゲート配線及びソース配線を形成する第6の工程と、を有する表示装置の作製方法。 A first step of forming a gate wiring of a pixel portion and a first wiring layer of a driving circuit portion on a substrate;
Before Kige chromatography on preparative wiring and the first wiring layer, a second step of forming a gate insulating film,
The gate insulating front film via Kige chromatography on preparative wiring and the first wiring layer, a third step of forming a semiconductor layer,
A fourth step of forming a source wiring , a drain wiring, and a second wiring layer of the driver circuit portion on the gate insulating film and the semiconductor layer;
The gate insulating film, the semiconductor layer, before Kiso over scan wiring, the upper drain wiring and the provided an interlayer insulating film in the second wiring layer, the first wiring layer and the second A fifth step of forming a first opening in the interlayer insulating film on the wiring layer and forming a second opening in the interlayer insulating film on the drain wiring ;
And a sixth step of dividing the first wiring layer and the second wiring layer in the first opening to form a gate wiring and a source wiring of the driver circuit portion. Method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013080908A JP2013236069A (en) | 2012-04-13 | 2013-04-09 | Display device and method of manufacturing said display device |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012091569 | 2012-04-13 | ||
JP2012091569 | 2012-04-13 | ||
JP2013080908A JP2013236069A (en) | 2012-04-13 | 2013-04-09 | Display device and method of manufacturing said display device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013236069A JP2013236069A (en) | 2013-11-21 |
JP2013236069A5 true JP2013236069A5 (en) | 2016-04-28 |
Family
ID=49761905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013080908A Withdrawn JP2013236069A (en) | 2012-04-13 | 2013-04-09 | Display device and method of manufacturing said display device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2013236069A (en) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08114815A (en) * | 1994-10-18 | 1996-05-07 | Sony Corp | Production of tft active matrix liquid crystal substrate |
JP2005099827A (en) * | 1995-08-04 | 2005-04-14 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacturing method |
JP2003295214A (en) * | 2002-03-29 | 2003-10-15 | Matsushita Electric Ind Co Ltd | Method for manufacturing liquid crystal display device |
JP2004273732A (en) * | 2003-03-07 | 2004-09-30 | Sharp Corp | Active matrix substrate and its producing process |
JP5221408B2 (en) * | 2009-02-06 | 2013-06-26 | 株式会社ジャパンディスプレイイースト | Display device and manufacturing method thereof |
-
2013
- 2013-04-09 JP JP2013080908A patent/JP2013236069A/en not_active Withdrawn
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2013047808A5 (en) | Display device | |
JP2013093565A5 (en) | Semiconductor device, display device, method for manufacturing semiconductor device, and method for manufacturing display device | |
JP2012138590A5 (en) | Display device | |
JP2013016831A5 (en) | ||
JP2012134520A5 (en) | Display device | |
JP2014150273A5 (en) | Semiconductor device | |
JP2015073101A5 (en) | Semiconductor device | |
JP2013190804A5 (en) | ||
JP2015165329A5 (en) | Display device manufacturing method and display device | |
JP2015156515A5 (en) | Method for manufacturing semiconductor device | |
JP2011155255A5 (en) | Semiconductor device | |
JP2013236066A5 (en) | ||
JP2014063179A5 (en) | ||
JP2012068629A5 (en) | Light emitting display device and method of manufacturing light emitting display device | |
JP2015111706A5 (en) | Display device and electronic device | |
JP2013122580A5 (en) | Method for manufacturing display device | |
JP2011192979A5 (en) | ||
JP2013041287A5 (en) | ||
JP2012068627A5 (en) | Method for manufacturing semiconductor device | |
JP2012160718A5 (en) | Semiconductor device | |
JP2015130487A5 (en) | ||
JP2012078847A5 (en) | Semiconductor device, display device, electronic device, manufacturing method of semiconductor device | |
JP2011119675A5 (en) | ||
JP2012256063A5 (en) | Display device | |
JP2013191864A5 (en) | Liquid crystal display |