JP2013236069A5 - Method for manufacturing display device - Google Patents

Method for manufacturing display device Download PDF

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Publication number
JP2013236069A5
JP2013236069A5 JP2013080908A JP2013080908A JP2013236069A5 JP 2013236069 A5 JP2013236069 A5 JP 2013236069A5 JP 2013080908 A JP2013080908 A JP 2013080908A JP 2013080908 A JP2013080908 A JP 2013080908A JP 2013236069 A5 JP2013236069 A5 JP 2013236069A5
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JP
Japan
Prior art keywords
wiring
layer
wiring layer
opening
insulating film
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JP2013080908A
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Japanese (ja)
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JP2013236069A (en
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Priority to JP2013080908A priority Critical patent/JP2013236069A/en
Priority claimed from JP2013080908A external-priority patent/JP2013236069A/en
Publication of JP2013236069A publication Critical patent/JP2013236069A/en
Publication of JP2013236069A5 publication Critical patent/JP2013236069A5/en
Withdrawn legal-status Critical Current

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Claims (4)

基板上に、画素部のゲート配線及び駆動回路部の第１の配線層を形成する第１の工程と、
前記ゲート配線上及び前記第１の配線層上に、ゲート絶縁膜を形成する第２の工程と、
前記ゲート絶縁膜を介した前記ゲート配線上及び前記第１の配線層上に、半導体層を形成する第３の工程と、
前記ゲート絶縁膜上及び前記半導体層上に、画素部のソース配線、ドレイン配線及び駆動回路部の第２の配線層を形成する第４の工程と、
前記ゲート絶縁膜上、前記半導体層上、前記ソース配線上、前記ドレイン配線上及び前記第２の配線層上に層間絶縁膜を設け、前記第１の配線層上及び前記第２の配線層上の前記層間絶縁膜に第１の開口部を形成し、前記ドレイン配線上の前記層間絶縁膜に第２の開口部を形成する第５の工程と、
前記第１の開口部において、前記第１の配線層及び前記第２の配線層を分断し、前記駆動回路部のゲート配線及びソース配線を形成する第６の工程と、を有する表示装置の作製方法。 A first step of forming a gate wiring of a pixel portion and a first wiring layer of a driving circuit portion on a substrate;
Before Kige chromatography on preparative wiring and the first wiring layer, a second step of forming a gate insulating film,
The gate insulating front film via Kige chromatography on preparative wiring and the first wiring layer, a third step of forming a semiconductor layer,
A fourth step of forming a source wiring , a drain wiring, and a second wiring layer of the driver circuit portion on the gate insulating film and the semiconductor layer;
The gate insulating film, the semiconductor layer, before Kiso over scan wiring, the upper drain wiring and the provided an interlayer insulating film in the second wiring layer, the first wiring layer and the second A fifth step of forming a first opening in the interlayer insulating film on the wiring layer and forming a second opening in the interlayer insulating film on the drain wiring ;
And a sixth step of dividing the first wiring layer and the second wiring layer in the first opening to form a gate wiring and a source wiring of the driver circuit portion. Method. 請求項１において、前記半導体層は、酸化物半導体を含む表示装置の作製方法。 According to claim 1, wherein the semiconductor layer is a method for manufacturing a Viewing device including an oxide semiconductor. 請求項１または２において、前記第２の開口部には、前記画素部に設けられるトランジスタに電気的に接続される画素電極が形成される表示装置の作製方法。 3. The method for manufacturing a display device according to claim 1 , wherein a pixel electrode electrically connected to a transistor provided in the pixel portion is formed in the second opening. 請求項１乃至請求項３のいずれか一において、前記第１の開口部は、前記第１の配線層の下層に達する開口部と、前記第２の配線層の下層に達する開口部と、により前記第１の配線層及び前記第２の配線層を分断し、前記駆動回路部の前記ゲート配線及び前記ソース配線とする表示装置の作製方法。 In any one of claims 1 to 3, wherein the first opening, an opening reaching the lower layer of the first wiring layer, an opening reaching the lower layer of the second wiring layer, by the first wiring layer and by dividing the second wiring layer, a method for manufacturing a display device according to the gate wiring and the source wiring of the driver circuit portion.
JP2013080908A 2012-04-13 2013-04-09 Display device and method of manufacturing said display device Withdrawn JP2013236069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013080908A JP2013236069A (en) 2012-04-13 2013-04-09 Display device and method of manufacturing said display device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012091569 2012-04-13
JP2012091569 2012-04-13
JP2013080908A JP2013236069A (en) 2012-04-13 2013-04-09 Display device and method of manufacturing said display device

Publications (2)

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JP2013236069A JP2013236069A (en) 2013-11-21
JP2013236069A5 true JP2013236069A5 (en) 2016-04-28

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JP2013080908A Withdrawn JP2013236069A (en) 2012-04-13 2013-04-09 Display device and method of manufacturing said display device

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Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08114815A (en) * 1994-10-18 1996-05-07 Sony Corp Production of tft active matrix liquid crystal substrate
JP2005099827A (en) * 1995-08-04 2005-04-14 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacturing method
JP2003295214A (en) * 2002-03-29 2003-10-15 Matsushita Electric Ind Co Ltd Method for manufacturing liquid crystal display device
JP2004273732A (en) * 2003-03-07 2004-09-30 Sharp Corp Active matrix substrate and its producing process
JP5221408B2 (en) * 2009-02-06 2013-06-26 株式会社ジャパンディスプレイイースト Display device and manufacturing method thereof

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