JP2013229471A - Dielectric film and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dielectric film in which connection of adjacent division layers can be prevented and pressure resistance can be improved.SOLUTION: In lamination structures 15 in which multicomponent high dielectric thin films 11 and division layers 13 are repeatedly laminated, the lamination structure 15 is constituted by a structure in which the division layer 13 is sandwiched by two barrier layers 12, 14. When manufacturing a dielectric film 1, even if post heat treatment at high temperature is performed, the lamination structure 15 constituted by the multicomponent high dielectric thin film 11 and the division layer 13 keeps a function, and the multicomponent high dielectric thin film 11 remains in the state in which it is divided by the division layer 13 in a horizontal direction. Therefore, it is possible to prevent connection of adjacent division layers 13 and improve pressure resistance.

Description

  The present invention relates to a dielectric film in which a plurality of multi-component dielectrics and divided layers are stacked, and a method for manufacturing the same.

Conventionally, for example, an atomic layer deposition method (hereinafter referred to as an ALD method) is known as a method for forming a film by laminating a plurality of multicomponent dielectrics and divided layers. The film formation by the ALD method has an advantage that a film thickness can be laminated at a level of several nanometers with high film thickness controllability, and a thin film having a significantly improved performance of a conventional single layer can be formed. A typical example is a laminated film of Al ₂ O ₃ and TiO ₂ called an ATO film (see Patent Document 1).

In this laminated film, Al ₂ O ₃ functioning as a capacitor has been successfully improved by remarkably improving the breakdown voltage by dividing it by sandwiching TiO ₂ acting as a resistance in the horizontal direction. This technique is not limited to Al ₂ O ₃ but can be applied to other dielectric films. For example, the same effect is obtained even in a laminated film of HfO ₂ and TiO ₂ (see Patent Document 2).

In recent years, multi-component thin films can be formed by combining post-heat treatment in film formation using the ALD method. For example, film formation with a high dielectric constant such that the dielectric constant of SrTiO ₃ exceeds 200 is possible. There is also a report (refer nonpatent literature 1).

Japanese Patent Publication No. 64-5440 Japanese Patent No. 4470831

“Journal of Applied Physics”, USA, 2009, vol. 106, p. 094101)

However, a multi-component system using a technique of forming an ATO film composed of a laminated film by the ALD method as shown in Patent Document 1 and a technique of performing post-heat treatment as shown in Non-Patent Document 1 When a structure in which the thin film is sandwiched between divided layers such as TiO ₂ is created, the following problems occur. That is, in order to control the crystal of ternary SrTiO ₃ to a perovskite structure by the ALD method, post-heat treatment at high temperature is essential, but diffusion of TiO ₂ into a multicomponent thin film occurs at that temperature. . For this reason, adjacent divided layers are connected to each other, which causes a problem that the breakdown voltage improvement mechanism as described above does not work.

  In view of the above-described points, an object of the present invention is to provide a dielectric film that can prevent adjacent divided layers from being connected to each other and can improve a withstand voltage, and a method for manufacturing the dielectric film.

  In order to achieve the above object, in the invention described in claim 1, the multicomponent dielectric thin film (11) composed of the multicomponent dielectric is disposed on one surface side of the multicomponent dielectric thin film, A plurality of stacked layers (15) each having a divided layer (13) made of a material having different conductivity depending on the crystal direction, and in each of the stacked layers, At least one surface is provided with a barrier layer (12, 14) for suppressing the constituent material of the divided layer from diffusing into the multicomponent dielectric thin film.

  Thus, in the laminated structure in which the multi-component dielectric thin film and the divided layer are repeatedly laminated in order, the laminated structure is configured as a structure having a barrier layer on at least one side of the divided layer. As a result, even when post-heat treatment is performed at a high temperature when the dielectric film is manufactured, the laminated structure including the multi-component dielectric thin film and the divided layer maintains the function, and the multi-component system The dielectric thin film can be left in a state of being divided in the horizontal direction by the dividing layer. For this reason, it is possible to prevent adjacent divided layers from being connected to each other, and it is possible to improve the breakdown voltage.

  Such a barrier layer may be disposed, for example, so as to sandwich both surfaces of the divided layer, or may be configured to be disposed only on one surface side of the divided layer.

  The dielectric film according to claim 1 can be manufactured by the manufacturing method according to claim 8. That is, a multi-component dielectric thin film (11) composed of a multi-component dielectric is formed, and one surface of the multi-component dielectric thin film is composed of a material having different conductivity depending on the crystal direction. A process of forming the laminated structure (15) by forming the dividing layer (13) is formed, and the process of forming the laminated structure is repeated a plurality of times to produce a dielectric film in which a plurality of laminated structures are laminated. In the dielectric film manufacturing method, in each of the steps of forming the laminated structure performed a plurality of times, the constituent material of the divided layer diffuses into the multi-component dielectric thin film on at least one of the two surfaces of the divided layer What is necessary is just to perform the process of forming the barrier layer (12, 14) which suppresses this.

  In addition, the code | symbol in the bracket | parenthesis of each said means shows an example of a corresponding relationship with the specific means as described in embodiment mentioned later.

It is a figure which shows the cross-sectional structure of the dielectric film 1 concerning 1st Embodiment of this invention. It is sectional drawing which showed the manufacturing process of the dielectric film 1 shown in FIG. It is a figure which shows the cross-sectional structure of the dielectric film 1 concerning 2nd Embodiment of this invention. FIG. 4 is a cross-sectional view showing a manufacturing process of the dielectric film 1 shown in FIG. 3.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other will be described with the same reference numerals.

(First embodiment)
A first embodiment of the present invention will be described. As shown in FIG. 1, the dielectric film 1 according to the present embodiment has a laminated structure 15 in which a multicomponent high-dielectric thin film 11, a barrier layer 12, a divided layer 13, and a barrier layer 14 are sequentially formed on a substrate 10. The structure is formed by repeating a plurality of times. That is, in the structure in which the multi-component high dielectric thin film 11 and the divided layer 13 are repeatedly laminated in order, the laminated structure 15 is configured by a structure in which the divided layer 13 is sandwiched between the two barrier layers 12 and 14. The laminated structure of the multi-component high-dielectric thin film 11, the barrier layer 12, the dividing layer 13, and the barrier layer 14 that are repeatedly formed is repeatedly formed, for example, 10 to 15 times. Each layer formed repeatedly is composed of the same film thickness and the same material. For example, the layer is composed of a nano-order film thickness to form a nanolaminate structure.

  The substrate 10 is made of, for example, a silicon substrate. The multicomponent high dielectric thin film 11 is composed of a multicomponent dielectric such as an oxide film, a nitride film or a boride film, preferably a multicomponent high dielectric having a high dielectric constant, for example, an STO film. , PZT film, BST film, YBCO film, SBTO film, HfSiON film, ZrSiO film, ZrHfO film, LaCoO film, TiSiN film and the like.

  The barrier layers 12 and 14 are composed of a metal thin film or an insulating film that acts as a resistance in the horizontal direction with respect to the surface of the substrate 10 or the multicomponent high-dielectric thin film 11, and a material that suppresses thermal diffusion of the constituent material of the dividing layer 13. Consists of. For example, the barrier layers 12 and 14 are made of a metal film such as Ti or Ni and an insulating film such as TiN or SrO. The material that suppresses the thermal diffusion of the constituent material of the divided layer 13 is a material that does not thermally diffuse the constituent material of the divided layer 13 or a material that does not reach the multi-component high-dielectric thin film 11 even if thermally diffused. It means that. Since the barrier layers 12 and 14 are formed, the material constituting the dividing layer 13 does not reach the multi-component high dielectric thin film 11, and the dividing layer 13 and the multi-component high dielectric thin film 11 are not formed. And are separated. The film thicknesses of these barrier layers 12 and 14 can be set arbitrarily, but it is preferable to make the film thickness smaller than that of the division layer 13 because this leads to a reduction in manufacturing cost.

The division layer 13 is a film that can achieve a high breakdown voltage, and is made of a material having different conductivity depending on the crystal direction. For example, the dividing layer 13 is composed of one or more of metal oxide, metal nitride, metal boride, and the like, and is composed of a film containing titanium oxide (TiO ₂ ). When titanium oxide is used, the conductivity in the horizontal direction with respect to the surface of the substrate 10 is low, and the conductivity in the normal direction can be increased. Therefore, a great effect of improving characteristics as a nanolaminate structure can be obtained.

  With such a structure, the dielectric film 1 according to the present embodiment is configured. According to such a structure, each multi-component high-dielectric thin film 11 is sandwiched by each divided layer 13 to constitute a capacitor, and each divided layer 13 constitutes a resistor. Therefore, as shown in the equivalent circuit diagram shown in FIG. 1, the multi-component high dielectric thin film 11 constituting the capacitor can be sandwiched between the dividing layers 13 acting as a resistance in the horizontal direction. For this reason, the breakdown voltage can be remarkably improved.

  In such a structure, by providing the barrier layers 12 and 14, it is possible to suppress the thermal diffusion of the constituent material of the dividing layer 13, so that it does not reach the multi-component high-dielectric thin film 11. It is possible to prevent the divided layers 13 from being connected to each other. Therefore, when the dielectric film 1 is manufactured, even if post-heat treatment is performed at a high temperature, the multilayer structure of the multi-component high-dielectric thin film 11 and the divided layer 13 maintains the function, and the multi-component high-dielectric The body thin film 11 can be left in a state of being divided in the horizontal direction by the dividing layer 13. For this reason, it is possible to maintain a high breakdown voltage.

  As long as the adjacent divided layers 13 are not connected to each other, the characteristics of the structure in which the crystals of the divided layers 13 are disordered are improved to some extent. Therefore, by adjusting the film type and film thickness of the barrier layers 12 and 14 It is also possible to control to a more optimal structure.

  Then, the manufacturing method of the dielectric film 1 concerning this embodiment comprised as mentioned above is demonstrated with reference to FIG.

  First, as shown in FIG. 2A, a substrate 10 is prepared, and the substrate 10 is placed in a chamber of an ALD apparatus (not shown). Then, a multi-component high dielectric thin film 11 composed of an oxide film, a nitride film, a boride film, or the like is formed by laminating films having two or less constituent components by the ALD method. In this way, it is difficult to form a film made of a multi-component dielectric, such as the ALD method, by laminating films having two or less components, that is, by performing the steps separately. However, it is possible to easily form a film.

For example, when the multi-component high-dielectric thin film 11 is composed of an STO film, the chamber is evacuated and then the N ₂ atmosphere is set, and the temperature is lower than the crystal structure dislocation temperature of the multi-component high-dielectric thin film 11. For example, the multicomponent high dielectric thin film 11 is formed by performing film formation for 5 minutes at a temperature of 700 ° C., for example. Since the film is formed at such a temperature, it is possible to use a material that cannot withstand the crystal structure dislocation temperature during the film formation. At this stage, since the multi-component high-dielectric thin film 11 is not crystallized, the dielectric constant is low.

  Subsequently, as shown in FIG. 2B, a barrier layer 12 made of a metal film or an insulating film is formed on the surface of the multicomponent high dielectric thin film 11 in the same chamber. Further, in the same chamber, as shown in FIG. 2 (c), a dividing layer 13 made of a metal oxide, a metal nitride, a metal boride or the like is formed on the surface of the barrier layer 12, and then FIG. As shown in d), a barrier layer 14 made of a metal film or an insulating film is formed on the surface of the dividing layer 13. As a result, a multilayer structure 15 including the multi-component high-dielectric thin film 11, the barrier layer 12, the dividing layer 13, and the barrier layer 14 is formed on the substrate 10.

  The film thicknesses of the multi-component high-dielectric thin film 11, the barrier layer 12, the dividing layer 13, and the barrier layer 14 are appropriately determined based on what is used as these constituent materials. However, for the barrier layers 12 and 14, when the constituent material of the divided layer 13 is thermally diffused during the post-heat treatment to be performed later, the barrier layers 12 and 14 are thicker than the diffusion distance by the thermal diffusion. I am doing so.

  Thereafter, by repeating the series of steps shown in FIGS. 2A to 2D a desired number of times (for example, 10 to 15 times), as shown in FIG. A laminated structure 15 is formed to obtain a nanolaminate structure. Then, post-heat treatment is performed at a temperature higher than the crystal structure dislocation temperature of the multi-component high-dielectric thin film 11 to control the crystal of the multi-component high-dielectric thin film 11 so that the multi-component high-dielectric thin film 11 A film having a high dielectric constant can be obtained. As a result, a structure in which the multi-component high dielectric thin film 11 having a very high dielectric constant is sandwiched between the divided layers 13 can be configured, and a high breakdown voltage can be realized.

  When such post-heat treatment is performed, the constituent material of the divided layer 13 may thermally diffuse. However, since both surfaces of the divided layer 13 are sandwiched between the barrier layers 12 and 14, thermal diffusion is performed. Can be suppressed. That is, the barrier layers 12 and 14 can prevent the constituent material of the dividing layer 13 from reaching the multi-component high dielectric thin film 11 even if it does not thermally diffuse. For this reason, the material constituting the dividing layer 13 does not reach the multi-component high-dielectric thin film 11, and the dividing layer 13 and the multi-component high-dielectric thin film 11 are separated by the barrier layers 12 and 14. Can be.

  Therefore, even if post-heat treatment is performed at a high temperature, the laminated structure 15 having the multicomponent high-dielectric thin film 11 and the dividing layer 13 maintains its function, and the multicomponent high-dielectric thin film 11 is formed by the dividing layer 13. It can be left horizontally divided. For this reason, it is possible to maintain a high breakdown voltage.

  In addition, by selecting the constituent materials of the barrier layers 12 and 14, it is possible to obtain an effect that the movement of the constituent materials of the divided layer 13 can be disturbed to enhance the effect of lamination during post-heat treatment. By selecting a material capable of obtaining such an effect as the constituent material of the barrier layers 12 and 14, the unevenness as shown in FIG. 2F is configured so as not to penetrate the barrier layers 12 and 14. Can do. As long as the adjacent layers are not connected to each other, the properties of the structure that is disturbed to some extent improve the characteristics. Therefore, the barrier layers 12 and 14 disturb the movement of the constituent materials of the divided layers 13, It is possible to improve.

  As described above, in the present embodiment, in the laminated structure 15 in which the multi-component high dielectric thin film 11 and the divided layer 13 are repeatedly laminated in order, the divided layer 13 is sandwiched between the two barrier layers 12 and 14. The laminated structure 15 is constituted by the structure. Thereby, when the dielectric film 1 is manufactured, the laminated structure 15 including the multi-component high-dielectric thin film 11 and the divided layer 13 has a function even if post-heat treatment is performed at a high temperature. The multi-component high-dielectric thin film 11 can be kept in the state of being divided in the horizontal direction by the dividing layer 13. For this reason, it is possible to prevent the adjacent divided layers 13 from being connected to each other and to improve the breakdown voltage.

  When the barrier layers 12 and 14 do not diffuse the constituent material of the divided layer 13, it is possible to prevent the adjacent divided layers 13 from being connected to each other no matter how the post-heat treatment temperature is set. . For this reason, it becomes possible to set the temperature range of post-heat treatment variously, and the freedom degree of temperature selection can be improved. In addition, when the barrier layers 12 and 14 allow the diffusion of the constituent materials of the divided layer 13 to some extent and prevent the adjacent divided layers 13 from being connected to each other, the number of material selection candidates is increased. be able to.

  In the present embodiment, the multi-component high-dielectric thin film 11, the barrier layers 12, 14 and the dividing layer 13 are all formed by the same film formation method, specifically, the ALD method. These films can be formed by different film forming methods, for example, a combination of an ALD method and a method other than the ALD method, or a combination of different film forming methods other than the ALD method. However, since it can be formed in the same chamber by forming by the same film formation method, it is possible to simplify the manufacturing process, such as sharing the vacuuming process in the chamber, and improve the throughput. Can be achieved.

  Of course, even if the film forming process of two or more of the multi-component high-dielectric thin film 11, the barrier layers 12, 14, and the divided layer 13 is performed continuously by the same film forming method, the manufacturing is performed. It becomes possible to simplify the process. In this case, it is not always necessary that two or more film forming steps are continuously performed during the process of forming the same stacked structure 15, and two or more films are formed during the process of forming the adjacent stacked structures 15. When the film process is continuous, the same film formation method may be used.

  Even if the film forming method is not the same, if the film forming process can be performed in the same chamber, the manufacturing process can be simplified. For example, the multi-component high-dielectric thin film 11 and the divided layer 13 may be formed by the ALD method, and the barrier layers 12 and 14 may be formed by a sputtering method other than the ALD method, but both ALD and sputtering are the same. There are also devices that can be performed in the chamber. In that case, if the multi-component high-dielectric thin film 11 and the divided layer 13 are formed by the same film forming method, the manufacturing process can be simplified.

(Second Embodiment)
A second embodiment of the present invention will be described. As shown in FIG. 3, the dielectric film 1 according to the present embodiment repeats a laminated structure 15 in which a multicomponent high-dielectric thin film 11, a barrier layer 12, and a divided layer 13 are sequentially formed on a substrate 10 a plurality of times. The structure is formed. That is, with respect to the first embodiment, the barrier layer 12 is disposed only on one side of the dividing layer 13 and the barrier layer 14 is not disposed on the other side. Thus, in the case of the structure in which the barrier layer 12 is disposed only on one surface side of the dividing layer 13, the dividing layer 13 is thermally diffused into the multicomponent high dielectric thin film 11 on the other surface side during post-heat treatment. . However, since the barrier layer 12 is provided on one surface side of the divided layer 13, at least the adjacent divided layers 13 are not connected to each other, and the function as a capacitor is not lost.

  Thus, even when the barrier layer 12 is arranged only on one surface side of the dividing layer 13, the same effect as that of the first embodiment can be obtained. In this case, since the number of barrier layers 12 formed can be reduced as compared with the first embodiment, the dielectric film 1 can be simplified.

  Then, the manufacturing method of the dielectric film 1 concerning this embodiment comprised as mentioned above is demonstrated with reference to FIG. The method for manufacturing the dielectric film 1 is also substantially the same as that of the first embodiment, and the first embodiment is referred to for the same parts.

  First, in the steps shown in FIGS. 4A to 4C, the same steps as in FIGS. 2A to 2C described in the first embodiment are performed. As a result, a multilayer structure 15 is formed on the surface of the substrate 10 in which the multi-component high-dielectric thin film 11, the barrier layer 12, and the dividing layer 13 are sequentially formed.

  Thereafter, by repeating the series of steps shown in FIGS. 4A to 4C a desired number of times (for example, 10 to 15 times), as shown in FIG. A laminated structure 15 is formed to obtain a nanolaminate structure. Then, post-heat treatment is performed at a temperature higher than the crystal structure dislocation temperature of the multi-component high-dielectric thin film 11 to control the crystal of the multi-component high-dielectric thin film 11 so that the multi-component high-dielectric thin film 11 A film having a high dielectric constant can be obtained. As a result, a structure in which the multi-component high dielectric thin film 11 having a very high dielectric constant is sandwiched between the divided layers 13 can be configured, and a high breakdown voltage can be realized.

  Also at this time, as shown in FIG. 4 (e), the selection of the constituent material of the barrier layer 12 can disturb the movement of the constituent material of the dividing layer 13 that enhances the effect of the lamination during the post-heat treatment. Unevenness can be formed to the extent that it does not penetrate the layer 12.

  As described above, in the present embodiment, the barrier layer 12 is arranged only on one surface side of the dividing layer 13. Even with such a structure, the same effect as in the first embodiment can be obtained. And by setting it as such a structure, compared with 1st Embodiment, since the process of manufacturing the barrier layer 14 can be eliminated, it also becomes possible to aim at the cost reduction by process reduction.

(Other embodiments)
In the above embodiment, the case where the laminated structure 15 having a desired number of layers is formed has been described. However, the number of layers is arbitrary, and there is a possibility that at least two layers, that is, adjacent divided layers 13 may be connected to each other. The present invention can be applied.

  In the second embodiment, the barrier layer 12 is formed on the surface of the multicomponent high dielectric thin film 11, and then the dividing layer 13 is formed. The barrier layer 14 on the surface of the dividing layer 13 is not formed. The structure. However, since the barrier layer only needs to be formed on at least one of both surfaces of the dividing layer 13, the barrier layer 14 on the surface side of the dividing layer 13 described in the first embodiment is formed, and the multicomponent high dielectric constant is formed. The barrier layer 12 between the body thin film 11 and the divided layer 13 may be eliminated.

  Further, in each of the above embodiments, the multicomponent high dielectric thin film 11 is formed on the surface of the substrate 10 and the barrier layer 12 is then formed. However, the multicomponent high dielectric thin film 11 is formed. Before, a barrier layer may be formed on the surface of the substrate 10. That is, when one side of the multi-component high-dielectric thin film 11 is the barrier layer 12 and the other side is the substrate 10, the multi-component high-dielectric thin film 11 is sandwiched between the barrier layer 12 and the substrate 10. . Therefore, the film sandwiching the multicomponent high dielectric thin film 11 is different from the multicomponent high dielectric thin film 11 included in the laminated structure 15 disposed in the upper layer. In this case, there is a possibility that the characteristics of the multicomponent high dielectric thin film 11 are different from those of the others. Therefore, it is preferable to arrange a barrier layer between the substrate 10 and the multi-component high-dielectric thin film 11 to ensure that the characteristics of the multi-component high-dielectric thin film 11 are aligned.

DESCRIPTION OF SYMBOLS 1 Dielectric film 10 Substrate 11 Multicomponent high-dielectric thin film 12 Barrier layer 13 Dividing layer 14 Barrier layer 15 Laminated structure

Claims (13)

A multi-component dielectric thin film (11) composed of a multi-component dielectric, and a divided layer composed of a substance having a different conductivity depending on the crystal direction, disposed on one side of the multi-component dielectric thin film. 13), and a plurality of laminated structures (15) comprising:
In each of the laminated structures laminated in plural, a barrier layer (12 that suppresses diffusion of the constituent material of the divided layer into the multi-component dielectric thin film on at least one of the two surfaces of the divided layer. 14). A dielectric film comprising:   The barrier layer is a material in which the component of the divided layer does not thermally diffuse into the multi-component dielectric at the crystal structure dislocation temperature of the multi-component dielectric, or the component of the divided layer is thermally diffused. The dielectric film according to claim 1, wherein the dielectric film has a film thickness that does not reach the multi-component dielectric thin film.   The dielectric film according to claim 1, wherein the barrier layer has a thickness smaller than that of the divided layer.   The said barrier layer is comprised by the metal film which acts as resistance in the horizontal direction with respect to the surface of the said multicomponent type dielectric thin film, or the insulating film, It is any one of Claim 1 thru | or 3 characterized by the above-mentioned. The dielectric film as described.   5. The dielectric film according to claim 1, wherein the divided layer is formed of any one of a metal oxide film, a metal nitride, and a metal boride film.   5. The dielectric film according to claim 1, wherein the dividing layer is formed of a film containing titanium oxide.   The multi-component dielectric thin film is composed of any one of an STO film, a PZT film, a BST film, a YBCO film, an SBTO film, an HfSiON film, a ZrSiO film, a ZrHfO film, a LaCoO film, and a TiSiN film. The dielectric film according to any one of claims 1 to 6. A multi-component dielectric thin film (11) composed of a multi-component dielectric is formed and divided on one surface side of the multi-component dielectric thin film with a material having different conductivity depending on the crystal direction. Forming a layered structure (15) by forming a layer (13);
A dielectric film manufacturing method for manufacturing a dielectric film in which a plurality of the stacked structures are stacked by repeatedly performing the step of forming the stacked structure a plurality of times,
In each of the steps of forming the laminated structure that is performed a plurality of times, the constituent material of the divided layer is prevented from diffusing into the multicomponent dielectric thin film on at least one surface of the divided layer. A method of manufacturing a dielectric film, comprising performing a step of forming a barrier layer (12, 14).   In each of the steps of forming the multilayer structure performed a plurality of times, after forming the multi-component dielectric thin film, performing the step of forming the barrier layer, and then forming the divided layer A method for manufacturing a dielectric film according to claim 8.   A substrate (10) is prepared, a barrier layer is formed on the surface of the substrate, and then the multilayer including the barrier layer in addition to the multicomponent dielectric thin film and the divided layer on the barrier layer. 10. The method for manufacturing a dielectric film according to claim 8, wherein a structure is formed.   When forming the multi-component dielectric thin film, the multi-component dielectric thin film is formed at a temperature lower than the crystal structure dislocation temperature of the multi-component dielectric, and then after the crystal structure dislocation temperature or higher. The method for manufacturing a dielectric film according to claim 8, wherein a heat treatment is performed.   12. The multi-component dielectric thin film is formed by laminating films having two or less components when forming the multi-component dielectric thin film. A method for producing a dielectric film according to any one of the above.   13. The method for manufacturing a dielectric film according to claim 8, wherein the multi-component dielectric thin film and the divided layer are formed by the same manufacturing method in the same chamber.

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