JP2005330519A - Vapor deposition system and vapor deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To feed high temperature gas heated at desired temperature to the direction of the substrate to be vapor-deposited together with an evaporated vapor deposition material without providing a means for heating gas separately from a vapor deposition system. <P>SOLUTION: Regarding the vapor deposition system 1, a vapor deposition source 12 and the substrate 51 to be vapor-deposited are oppositely provided inside a chamber 11. The vapor deposition source 12 is provided with: a crucible 13 for evaporating a vapor deposition material; a gas flow passage 14 for feeding gas 61 to the direction of the substrate to be vapor-deposited along the outer circumferential side of the crucible 13; and a heating source 15 for heating the gas flow passage 14. The gas flow passage 14 is composed of layered flow passages 141 as a plurality of layers where gas is made to flow from the lowest layer to the direction of the outermost layer, and an opening part 145 is formed on each layered flow passage 141 in such a manner that the gas flow goes to the direction of the substrate 51 to be vapor-deposited. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a vapor deposition apparatus and a vapor deposition method that can easily flow a high-temperature carrier gas along with an evaporation material of a vapor deposition source in the direction of a film formation substrate without providing a heating mechanism dedicated to the carrier gas separately from the vapor deposition apparatus. Is.

  In general, an organic film for a low molecular weight organic light emitting device used for an organic electroluminescence display or the like is produced by a vacuum deposition method. Conventionally used vacuum vapor deposition methods have low utilization efficiency of vapor deposition materials. In addition, there is a problem that the vapor deposition material easily adheres to the inner wall of the chamber where vapor deposition is performed, and the inside of the chamber is easily contaminated. Therefore, a vapor deposition method called a hot wall method has been developed (for example, see Patent Document 1). By using this hot wall method, the utilization efficiency of raw materials can be improved. Further, in the hot wall method, it is possible to minimize the deposition of the vapor deposition material in the chamber, prevent contamination in the chamber, keep the vacuum quality high, and perform vapor deposition with high purity. For this reason, it is used for the formation method of an organic thin film. However, as in the conventional vacuum deposition method, it is difficult to precisely control the multicomponent thin film.

  In recent years, unlike the vacuum deposition method, a reduced pressure organic vapor deposition method called OVPD has been developed (for example, see Patent Document 2). This OVPD method is a method of forming an organic film in which a source gas is conveyed to a substrate with a carrier gas, and the gas is condensed on the substrate to form a film. When this method is used, it is expected that organic materials having significantly different vapor pressures can be co-deposited and each component of the multicomponent thin film can be precisely controlled. In the film formation by this OVPD method, in order to form an organic film having good surface properties by avoiding crystallization of the organic film and crystal grain growth, the substrate temperature rise accompanying the transport of the high temperature raw material gas is suppressed as much as possible, During film formation, the substrate temperature must be maintained near room temperature or below the crystallization temperature. However, in the OVPD method, film formation is performed under atmospheric pressure or a reduced pressure close to atmospheric pressure. As described above, a film grown under atmospheric pressure or a reduced pressure close to atmospheric pressure becomes rough, and there is a problem that a film having a non-uniform surface morphology is formed by vapor phase nucleation and diffusion-controlled growth processes.

  Therefore, a film deposition technique for forming an organic thin film with smooth surface properties by controlling the transport speed of a low molecular weight organic source gas using a carrier gas under reduced pressure and carrying it to the substrate has been proposed. Containers have also been proposed (see, for example, Patent Document 3). In this vapor deposition apparatus, under reduced pressure, carrier gas is used to control the transport speed of the low molecular weight organic source gas evaporated from the vapor deposition source located at the position facing the substrate, and carry it to the substrate for smooth surface properties. An organic thin film is formed. For this reason, it becomes a vapor deposition container which has the shape (it is called a gas barrier type) which flows carrier gas from the circumference | surroundings of a vapor deposition source to a board | substrate direction.

JP 2002-80961 A Special table 2001-523768 gazette Japanese Patent Application No. 2004-008847

  The problem to be solved is that in order to introduce a carrier gas having a boiling point higher than the boiling point of the organic raw material or a sublimation point, the carrier gas is heated not only to the structure for heating the vapor deposition vessel but also immediately before entering the vapor deposition vessel. It is a point that it is necessary to provide a structure for the heating, and it is necessary to provide a large-scale heating device. Therefore, the vapor deposition device itself becomes large, the installation area of the device becomes large, and a lot of costs are required.

  The vapor deposition apparatus according to the present invention is a vapor deposition apparatus in which a vapor deposition source and a substrate to be vapor-deposited are provided facing each other in a chamber. The vapor deposition source includes a crucible for evaporating a vapor deposition material and an outer peripheral side of the crucible. A gas flow path for supplying gas in the direction of the deposition substrate and a heating source for heating the gas flow path are provided, and the gas flow path is formed into a plurality of layers for flowing gas from the bottom layer to the top layer. The main feature is that it is composed of a structured layered flow path, and the uppermost flow path is formed with an opening for a gas flow in the direction of the deposition substrate.

  The vapor deposition method of the present invention is a vapor deposition method in which a vapor deposition material evaporated from the vapor deposition source is deposited on the vapor deposition substrate using a vapor deposition apparatus in which a vapor deposition source and a vapor deposition substrate are provided facing each other in a chamber. The vapor deposition source includes a crucible for evaporating the vapor deposition material, a gas flow path for supplying gas toward the vapor deposition substrate along the outer peripheral side of the crucible, and a heating source for heating the gas flow path. The gas flow path is formed of a plurality of layered flow paths configured to flow gas from the lowermost layer to the uppermost layer, and the gas flow is directed toward the deposition substrate toward the uppermost flow path. The main feature is that the part is formed.

  The vapor deposition apparatus of the present invention includes a gas flow path for supplying gas in the direction of the vapor deposition substrate along the outer peripheral side of the crucible of the vapor deposition apparatus, and a heating source for heating the gas flow path. Since the gas is heated immediately before being performed, there is an advantage that a high-temperature gas having a desired temperature can be flowed toward the deposition substrate. In addition, even if an unheated gas is supplied into the flow path, the gas flow path is composed of a layered flow path formed of a plurality of layers, so that the contact distance between the supplied gas and the flow path is increased. Gas can be sufficiently heated in the flow path. For this reason, it is not necessary to provide an apparatus for heating the gas exclusively outside the vapor deposition apparatus as in the conventional vapor deposition apparatus, so that the installation area of the apparatus and the apparatus cost can be reduced by the conventional heating apparatus. Therefore, in the vapor deposition apparatus of the present invention, for example, a gas (for example, a carrier gas) is heated when an organic film is formed by combining an OVPD method, which is an organic gas vapor deposition method, in addition to a conventional organic material vapor deposition method. Since the flow path and the heating unit are provided, a high-temperature gas (for example, carrier gas) having a desired temperature controlled by the heating unit can be flowed in the direction of the deposition substrate. It becomes possible to form an organic film capable of compositional gradient. In addition, the utilization efficiency of the vapor deposition material and the film formation speed can be improved. Further, since the gas released from the gas flow path toward the deposition substrate is released from the side periphery of the crucible, the vapor deposition material evaporated from the crucible is surrounded by the gas released from the gas flow path. For this reason, the deposition material can be prevented from adhering to the inner wall of the chamber where vapor deposition is performed, and this can be achieved by suppressing contamination inside the chamber. Therefore, since it is possible to maintain a vacuum state with a high degree of cleanliness, a high-purity deposited film can be formed.

  The vapor deposition method of the present invention performs vapor deposition using a vapor deposition apparatus having a gas flow path for supplying gas in the direction of the vapor deposition substrate along the outer peripheral side of the crucible of the vapor deposition apparatus and a heating source for heating the gas flow path. Therefore, since the gas can be heated immediately before being emitted to the deposition target substrate, there is an advantage that a high-temperature gas having a desired temperature can flow toward the deposition target substrate. In addition, even if an unheated gas is supplied into the flow path, the gas flow path is composed of a layered flow path constituted by a plurality of layers, so that the contact distance between the supplied gas and the flow path is reduced. Since the gas can be taken for a long time, the gas can be sufficiently heated in the flow path. Therefore, in the vapor deposition apparatus of the present invention, for example, a gas (for example, a carrier gas) is heated when an organic film is formed by combining an OVPD method, which is an organic gas vapor deposition method, in addition to a conventional organic material vapor deposition method. Since vapor deposition is performed using a vapor deposition apparatus including a flow path and a heating unit, a high-temperature gas (for example, carrier gas) having a desired temperature controlled by the heating unit can be flowed toward the deposition substrate. Therefore, it is possible to form an organic film having a good film thickness distribution and capable of compositional gradient. In addition, the utilization efficiency of the vapor deposition material and the film formation speed can be improved. Further, since the gas released from the gas flow path toward the deposition substrate is released from the side periphery of the crucible, the vapor deposition material evaporated from the crucible is surrounded by the gas released from the gas flow path. Therefore, it is possible to prevent the deposition material from adhering to the inner wall of the chamber where vapor deposition is performed, and to suppress contamination inside the chamber. Therefore, it is possible to maintain a vacuum state with a high degree of cleanliness, so that a high-purity deposited film can be formed.

  For the purpose of introducing a high-temperature carrier gas above the boiling point or sublimation point of the organic raw material, a gas flow path for supplying gas toward the vapor deposition substrate along the outer peripheral side of the crucible of the vapor deposition apparatus, and heating the gas flow path This was realized without providing a dedicated heating device for heating the carrier gas outside the vapor deposition device by forming a layered flow channel having a plurality of gas flow channels.

  A first embodiment of the vapor deposition apparatus and vapor deposition method of the present invention will be described with reference to FIG. 1A and 1B are schematic cross sections showing an outline of a vapor deposition apparatus, FIG. 1B is a schematic cross section showing a vapor deposition source of the vapor deposition apparatus, and FIG. 1C is a part A of FIG. An enlarged sectional view is shown.

  As shown in FIG. 1, a vapor deposition apparatus 1 in which a vapor deposition source 12 and a deposition target substrate 51 are provided in a chamber 11 so as to face each other. The vapor deposition source 12 includes a crucible 13 for evaporating the vapor deposition material 71, a gas flow path 14 for supplying a gas 61 (for example, carrier gas) along the outer peripheral side of the crucible 13 toward the vapor deposition substrate 51, and a gas flow path 14 and a heating source 15 for heating 14. In order to prevent the heat in the gas flow path 14 from escaping from the side periphery of the gas flow path 14, it is preferable to provide a heat insulating wall 16. The heat source 15 may be provided in the heat insulating wall 16 as illustrated. In this case, the gas flow path 14 side of the heating source 15 is preferably made of a material having excellent thermal conductivity. Furthermore, a heating source 151 may be provided on the lower side of the crucible 13 and the lower side of the gas flow path 14. Note that a heating source (not shown) dedicated to the crucible may be provided for heating the crucible 13. The chamber 11 is connected to a vacuum device (not shown) for adjusting the degree of vacuum in the chamber 11.

  The gas flow path 14 includes a layered flow path 141 configured in a plurality of layers through which the gas 61 flows from the lowermost layer toward the uppermost layer. That is, an inner wall 142 provided outside the crucible 13, an outer wall 143 formed at a predetermined interval from the inner wall 142, and a plurality of layers in layers between the inner wall 142 and the outer wall 143. And an interlayer wall 144 formed on the substrate. Therefore, the space sandwiched between the interlayer walls 144 becomes the layered channel 141. The inner wall 142, the outer wall 143, and the interlayer wall 144 are preferably made of a material having excellent thermal conductivity at a high temperature (for example, about 300 ° C. to 600 ° C.). For example, tungsten (W) having corrosion resistance, In order to prevent corrosion due to the gas 61 on the surface in contact with the gas 61 when a high-melting-point metal material such as titanium (Ti) can be used and a metal material with low corrosion resistance such as copper (Cu) is used. For example, a coating such as an oxide film, a nitride film, ceramics, or enamel is preferably applied.

  An opening that communicates between the layered channels 141 is formed in an interlayer of each layer constituting the gas channel 14, that is, the interlayer wall 144. For example, with respect to one layered channel 141-1, the lower interlayer wall 144-1 is provided with an opening 145-1 for allowing the gas 61 to flow into the layered channel 141-1, and the upper side The interlayer wall 144-2 is provided with an opening 145-2 through which the gas 61 flows out into the upper flow path 141-2. Thus, since the opening part 145 (for example, 145-1, 145-2) which connects between each layered flow path 141 is formed, the gas supplied to the lowermost layered flow path 141-D 61 is sequentially supplied to each upper layered flow path 141 through the opening 145, and is discharged from the uppermost layered flow path 141-U toward the film formation substrate 51.

  Further, in each layered channel 141, for example, with respect to one layered channel 141 (for example, 141-1), the lower interlayer wall 144-1 and the upper interlayer wall 144-2 have A plurality of fins 146 and fins 147 are formed in a state in which a flow path is secured between the opposing wall surfaces alternately with respect to each wall surface. The fins 146 and 147 are preferably made of a material having excellent thermal conductivity at a high temperature (for example, about 300 ° C. to 600 ° C.). For example, the fins 146 and 147 have high corrosion resistance such as tungsten (W) and titanium (Ti). In the case where a metal material having a low melting point can be used and a metal material having low corrosion resistance such as copper (Cu) is used, for example, an oxide film or a nitride film is used in order to prevent the gas 61 from corroding the surface in contact with the gas 61. It is preferable to apply a ceramic or enamel coating. As described above, since the plurality of fins 146 and 147 are formed in a state where the flow paths are secured between the opposing wall surfaces alternately with respect to the respective wall surfaces, the gas is supplied to the fins 146 and 147. Since the gas 61 can sufficiently come into contact with each other, the heating efficiency of the gas 61 can be increased, and the gas 61 can be heated uniformly in each layered flow channel 141.

  The fins 146 and 147 may be formed in an annular shape when viewed in the direction of the crucible 13 from the deposition substrate 51 side, for example, or may be arranged in an annular shape in a plurality of divided states. In any case, it is only necessary to ensure an opening that serves as a flow path for the gas 61 between the interlayer wall 144 facing the fin 146. Further, the shape of the fin 146 may not be a shape that obstructs the gas flow flowing through the layered flow channel 141. For example, the fin 146 may be provided perpendicular to the wall surface as illustrated, or may be inclined in the gas flow direction. It may be provided. By providing the fins 146 and 147 perpendicularly to the wall surface of the interlayer wall 144, it is possible to take a long time for the gas flow to contact the surface of the fins 146 and 147. Further, when the fins 146 and 147 are provided so as to be inclined in the gas flow direction with respect to the wall surface of the interlayer wall 144, the gas flow can contact the surfaces of the fins 146 and 147 and the gas flow can flow more smoothly. become.

  In addition, a gas supply unit 17 that supplies the gas 61 is connected to the gas channel 14 at a plurality of locations in the lowermost channel 141 -D. Here, an example of connection at two locations is shown. As described above, since the gas supply unit 17 is connected to a plurality of positions of the lowermost flow path 141-D, the lowermost flow path 141-D is compared with the case where the gas 61 is supplied from one position. To be supplied uniformly.

  The vapor deposition apparatus 1 of the present invention includes a gas flow path 14 that supplies a gas 61 in the direction of the vapor deposition substrate 51 along the outer peripheral side of the crucible 13 of the vapor deposition apparatus 1, and a heating source 15 that heats the gas flow path 14. Since the gas 61 is heated immediately before being released to the deposition target substrate 51, there is an advantage that the high-temperature gas 61 having a desired temperature can flow toward the deposition target substrate 51. Further, even if an unheated gas is supplied into the flow path, the gas flow path 14 is composed of the layered flow path 141 configured in a plurality of layers, so that the supplied gas and the layered flow path 141 Since the contact distance can be increased, the gas 61 can be sufficiently heated in the flow path. For this reason, it is not necessary to provide an apparatus for heating the gas exclusively outside the vapor deposition apparatus as in the conventional vapor deposition apparatus, so that the installation area of the apparatus and the apparatus cost can be reduced by the conventional heating apparatus. Therefore, in the vapor deposition apparatus 1 of the present invention, for example, when an organic film is formed by merging an OVPD method, which is an organic gas vapor deposition method, in addition to a conventional organic material vapor deposition method, a desired temperature controlled by the heating unit 15 is obtained. Since a gas (for example, carrier gas) 61 having a high temperature can be flowed in the direction of the deposition substrate 51, an organic film having a good film thickness distribution and a composition gradient can be formed. In addition, the utilization efficiency of the vapor deposition material and the film formation speed can be improved. Further, since the gas 61 released from the gas flow path 14 toward the deposition target substrate 51 is released from the side periphery of the crucible 13, the vapor deposition substance 81 evaporated from the crucible 13 is released from the gas flow path 14. It will be surrounded by 61. For this reason, the deposition material 81 can be prevented from adhering to the inner wall of the chamber 11 where the vapor deposition is performed, and this can be achieved by suppressing contamination inside the chamber 11. Therefore, since the inside of the chamber 11 can be kept in a highly clean vacuum state, a high-purity vapor deposition film can be formed on the vapor deposition substrate 51.

  Next, the vapor deposition method using the said vapor deposition apparatus 1 is demonstrated.

  As shown in FIG. 1, a vapor deposition substrate 51 is installed in the chamber 11, and a vapor deposition material 71 is accommodated in the crucible 13. Then, the chamber 11 is evacuated to reach a desired degree of vacuum. Then, the vapor deposition material 71 in the crucible 13 is heated and evaporated to generate a vapor deposition substance 81, and a gas (for example, carrier gas) 61 is introduced into the gas flow path 14 from the gas supply unit 17, and the heating source 15 By heating the gas channel 14, the gas 61 flowing in the gas channel 14 is heated to a desired temperature. The gas 61 thus heated is discharged from the uppermost channel 141 -U of the gas channel 14 toward the deposition target substrate 51. At this time, the gas 61 heated to a desired temperature is released along with the gasified vapor deposition material 81 in the direction of the vapor deposition substrate 51 so as to surround the side circumference of the gasified vapor deposition material 81. And the shutter (not shown) installed in the crucible 13 side of the vapor deposition substrate 51 is opened. As a result, the vaporized vapor deposition material 81 adheres to and deposits on the film formation surface of the vapor deposition substrate 51, and a vapor deposition film (not shown) is formed on the surface of the vapor deposition substrate 51. Then, after the film formation to a desired film thickness is completed, the shutter (not shown) is closed to prevent the vapor deposition substance 81 from moving toward the vapor deposition substrate 51, and the heating of the vapor deposition material 71 is stopped. The supply of the gas 61 is stopped, and further the heating by the heating source 15 is stopped. Thereby, the production | generation of the vapor deposition substance 81 is stopped. Then, after the inside of the chamber 11 is evacuated, the inside of the chamber 11 is replaced with, for example, an inert gas, and then the deposition target substrate 51 that has been deposited is moved from the inside of the chamber 11 to another container filled with the inert gas. do it. In addition, when forming a vapor deposition film in multiple layers, the vapor deposition material 71 may be replaced | exchanged with the crucible 13, and vapor deposition may be performed by the process similar to that demonstrated above.

  The vapor deposition method of the present invention includes a gas flow path 14 for supplying a gas 61 in the direction of the vapor deposition substrate 51 along the outer peripheral side of the crucible 13 of the vapor deposition apparatus 1, and a heating source 15 for heating the gas flow path 14. Since vapor deposition is performed using the vapor deposition apparatus 1, the gas 61 can be heated immediately before being released to the vapor deposition substrate 51, so that a high-temperature gas 61 having a desired temperature can flow toward the vapor deposition substrate 51. There is an advantage that you can. Further, even if an unheated gas is supplied into the flow path, the gas flow path 14 is composed of the layered flow path 141 configured in a plurality of layers. Since the contact distance with 141 can be increased, the gas 61 can be sufficiently heated in the flow path. Therefore, in the vapor deposition method of the present invention, for example, when forming an organic film in which the OVPD method, which is an organic gas vapor deposition method, is combined with the conventional organic material vapor deposition method, the gas 61 heated to a desired temperature and the vapor deposition material are formed. Therefore, an organic film having a good film thickness distribution and a composition gradient can be formed. In addition, the utilization efficiency of the vapor deposition substance 81 and the film formation speed can be improved. Further, since the gas 61 released from the gas flow path 14 toward the deposition target substrate 51 is released from the side periphery of the crucible 13, the vapor deposition substance 81 evaporated from the crucible 13 is discharged from the gas flow path 14. Thus, the deposition material 81 is prevented from adhering to the inner wall of the chamber 11 where vapor deposition is performed, and contamination inside the chamber 11 can be suppressed. Accordingly, it is possible to maintain a vacuum state with a high degree of cleanliness, so that a high-purity vapor deposition film can be formed on the film formation surface of the vapor deposition substrate 51.

  Next, a second embodiment of the vapor deposition apparatus and vapor deposition method of the present invention will be described with reference to FIG. 2 is a schematic cross-sectional view showing a vapor deposition source of the vapor deposition apparatus, (2) is a partially enlarged cross-sectional view of the gas flow path 14 in FIG. (1) shows a partially enlarged sectional view of the gas flow path 18 in FIG.

  The vapor deposition apparatus 2 of 2nd Example provides the vapor deposition source 12 and the to-be-deposited substrate in the chamber facing each other. As shown in FIG. 2, the vapor deposition source 12 includes a crucible 13 for evaporating the vapor deposition material 71, a gas flow path 18 for supplying a gas 61 (for example, carrier gas) from the bottom side of the crucible 13 toward the outer peripheral side, A gas channel 14 that communicates with the gas channel 18 and supplies gas 61 (for example, carrier gas) in the direction of the deposition substrate (not shown) along the side periphery of the crucible 13; A heating source 15 for heating the gas flow path 18 is provided. In order to prevent the heat in the gas flow paths 14 and 18 from escaping from the side periphery of the gas flow paths 14 and 18, it is preferable to provide a heat insulating wall 16. The heat source 15 may be provided in the heat insulating wall 16 as illustrated. In this case, the gas flow path 14 side of the heating source 15 is preferably made of a material having excellent thermal conductivity. Furthermore, a heating source 151 may be provided on the lower side of the gas flow path 18. In addition, the heating source 151 may be used for heating the crucible 13, or a heating source (not shown) dedicated to the crucible may be provided. The configuration of the chamber is the same as that of the first embodiment.

  The gas flow path 18 includes a layered flow path 181 configured in a plurality of layers through which the gas 61 flows from the lowermost layer toward the uppermost layer. That is, the outer wall 182 is formed outside the crucible 13 so as to have an outer shape larger than the outer shape of the bottom of the crucible 13, and the interlayer wall 183 is formed in a plurality of layers. Accordingly, each space surrounded by the outer wall 182 and sandwiched between the interlayer walls 183 becomes the above-described layered flow path 181. The outer wall 182 and the interlayer wall 183 are preferably made of a material having excellent thermal conductivity at a high temperature (for example, about 300 ° C. to 600 ° C.). For example, tungsten (W) and titanium (Ti) having corrosion resistance In the case where a metal material having low corrosion resistance such as copper (Cu) is used, in order to prevent corrosion due to the gas 61 on the surface in contact with the gas 61, for example, an oxide film It is preferable to apply a coating such as a nitride film, ceramics or enamel.

  An opening that communicates between the layered flow paths 181 is formed in an interlayer of each layer constituting the gas flow path 18, that is, the interlayer wall 183. For example, with respect to one laminar flow path 181-1, the lower interlayer wall 183-1 is provided with an opening 184-1 through which the gas 61 flows into the laminar flow path 181-1, and the upper side The interlayer wall 183-2 is provided with an opening 184-2 through which the gas 61 flows out into the upper flow path 181-2. The openings 184-1 and 184-2 are alternately provided on the lower center side of the crucible 13 and the outer wall 182 side. As described above, since the openings 184-1 and 184-2 communicating between the respective layered channels 181 are formed, the gas 61 supplied to the lowermost layered channel 181-D is the opening. The gas is supplied to the upper layered flow paths 181 sequentially through 184-1 and 184-2, and is supplied to the gas flow path 14 from the uppermost layered flow path 181-U.

  The gas flow path 14 is a layered flow path 141 communicating with the gas flow path 18 and configured in a plurality of layers through which the gas 61 flows from the lowermost layer toward the uppermost layer. That is, an inner wall 142 provided outside the crucible 13, an outer wall 143 formed at a predetermined interval from the inner wall 142, and a plurality of layers in layers between the inner wall 142 and the outer wall 143. And an interlayer wall 144 formed on the substrate. Therefore, the space sandwiched between the interlayer walls 144 becomes the layered channel 141. The inner wall 142, the outer wall 143, and the interlayer wall 144 are preferably made of a material having excellent thermal conductivity at a high temperature (for example, about 300 ° C. to 600 ° C.). For example, tungsten (W) having corrosion resistance, In order to prevent corrosion due to the gas 61 on the surface in contact with the gas 61 when a high-melting-point metal material such as titanium (Ti) can be used and a metal material with low corrosion resistance such as copper (Cu) is used. For example, a coating such as an oxide film, a nitride film, ceramics, or enamel is preferably applied.

  An opening that communicates between the layered channels 141 is formed in an interlayer of each layer constituting the gas channel 14, that is, the interlayer wall 144. For example, with respect to one layered channel 141-1, the lower interlayer wall 144-1 is provided with an opening 145-1 for allowing the gas 61 to flow into the layered channel 141-1, and the upper side The interlayer wall 144-2 is provided with an opening 145-2 through which the gas 61 flows out into the upper flow path 141-2. Thus, since the opening part 145 (for example, 145-1, 145-2) which connects between each layered flow path 141 is formed, the lowermost layered flow path 141- from the said gas flow path 18 is formed. The gas 61 supplied to D is sequentially supplied to each upper layered flow path 141 through the opening 145, and is discharged from the uppermost layered flow path 141-U toward the film formation substrate (not shown). It becomes like this.

  Further, in each layered channel 141, for example, with respect to one layered channel 141 (for example, 141-1), the lower interlayer wall 144-1 and the upper interlayer wall 144-2 have A plurality of fins 146 and fins 147 are formed in a state in which a flow path is secured between the opposing wall surfaces alternately with respect to each wall surface. Similarly, in each layered flow path 181, for example, with respect to one layered flow path 181 (for example, 181-1), the lower interlayer wall 183-1 and the upper interlayer wall 183-2 The plurality of fins 186 and fins 187 are formed in a state in which a flow path is secured between the opposite wall surfaces alternately with respect to each wall surface. The fins 146, 147, 186, 187 are preferably made of a material having excellent thermal conductivity at a high temperature (eg, about 300 ° C. to 600 ° C.). For example, tungsten (W), titanium (Ti In the case where a metal material having low corrosion resistance such as copper (Cu) is used, in order to prevent corrosion by the gas 61 on the surface in contact with the gas 61, for example, oxidation is performed. It is preferable to apply a coating such as a film, nitride film, ceramics or enamel. As described above, since the plurality of fins 146, 147, 186, 187 are formed in a state where the flow paths are secured between the opposing wall surfaces alternately with respect to the respective wall surfaces, the fins 146, 147 are formed. Since the gas 61 can sufficiently come into contact with 186 and 187, the heating efficiency of the gas 61 can be increased, and the gas 61 can be heated evenly in each of the layered channels 141 and 181. It becomes possible.

  Each of the fins 146, 147, 186, 187 may be formed in an annular shape when viewed in the direction of the crucible 13 from the vapor deposition substrate 51 side, for example, and is arranged in an annular shape in a plurality of divided states. But you can. Further, the shape of the fins 146, 147, 186, and 187 may not be a shape that obstructs the gas flow. May be. By providing the fins 146, 147, 186, 187 perpendicularly to the wall surface of the interlayer wall, it becomes possible to take a long time for the gas flow to contact the surface of the fins 146, 147, 186, 187, and the gas 61. Can be heated sufficiently. When the fins 146, 147, 186, and 187 are provided so as to be inclined in the gas flow direction with respect to the wall surface of the interlayer wall, the gas flow comes into contact with the surfaces of the fins 146, 147, 186, and 187 and the gas flow is changed. It becomes possible to flow more smoothly.

  Further, the gas flow path 18 is connected to gas supply portions 17 for supplying the gas 61 at a plurality of locations in the lowermost flow path 181 -D. Here, an example of connection at two locations is shown. Thus, since the gas supply unit 17 is connected to a plurality of locations of the lowermost flow path 181 -D, the lowermost flow path 181 -D is compared with the case where the gas 61 is supplied from one location. To be supplied uniformly.

  The heating source 15 may be embedded in the outer walls 143 and 182 of the gas flow paths 14 and 18. The heating source 15 is a heater using a heating wire, for example. Thus, since the heating source 15 is installed so as to heat the outer walls 143 and 182 of the gas flow paths 14 and 18, the gas flow paths 14 and 18 are heated by the heating source 15.

  The vapor deposition apparatus 2 of the present invention can obtain the same operations and effects as the vapor deposition apparatus 1. Further, a gas flow path 18 comprising a layered flow path 181 configured in a plurality of layers similar to the gas flow path 14 is provided in the lower part of the crucible 13 and communicates with the gas flow path 14 provided on the outer periphery of the crucible 13. For this reason, the gas 61 can be sufficiently heated as compared with the vapor deposition apparatus 1.

  The vapor deposition method using the vapor deposition apparatus 2 is the same as that using the vapor deposition apparatus 1 except that the gas 61 is supplied to the gas flow path 18 and heated and then supplied to the gas flow path 14. . Therefore, even when vapor deposition is performed using the vapor deposition apparatus 2, the same effects as when vapor deposition is performed using the vapor deposition apparatus 1 can be obtained. Further, when vapor deposition is performed using the vapor deposition apparatus 2, the gas 61 is also heated in the gas flow path 18 installed below the crucible 13, so that the gas 61 can be sufficiently heated to a desired temperature. become.

  Next, a third embodiment of the vapor deposition apparatus and vapor deposition method of the present invention will be described with reference to FIG. 3A and 3B are schematic cross-sectional views showing a vapor deposition source of the vapor deposition apparatus, and FIG. 3B is a partially enlarged cross-sectional view of the gas flow path 18 shown in FIG.

  The vapor deposition apparatus 3 of the third embodiment is provided with a vapor deposition source 12 and a vapor deposition substrate facing each other in a chamber. As shown in FIG. 3, the vapor deposition source 12 includes a crucible 13 for evaporating the vapor deposition material 71, a gas flow path 18 for supplying a gas 61 (for example, carrier gas) from the bottom side of the crucible 13 toward the outer peripheral side, And a heating source 15 for heating the flow path 18. The side periphery of the gas channel 18 and the outer periphery of the crucible 13 are heated so that the heat in the gas channel 18 does not escape and supplied to the deposition target substrate 51 by the outer periphery of the crucible 13. It is preferable to provide a heat insulating wall 16 for preventing the temperature of the gas 61 from decreasing from the crucible 13 at a desired interval. Therefore, a space between the heat insulating wall 16 and the crucible 13 is a flow path of the heated gas 61 supplied in the direction of the deposition target substrate (not shown). The heat source 15 may be provided in the heat insulating wall 16 as illustrated. In this case, the gas flow path 18 side of the heating source 15 is preferably made of a material having excellent thermal conductivity. Furthermore, a heating source 151 may be provided on the lower side of the gas flow path 18. In addition, the heating source 151 may be used for heating the crucible 13, or a heating source (not shown) dedicated to the crucible may be provided. The configuration of the chamber is the same as that of the first embodiment.

  The gas flow path 18 includes a layered flow path 181 configured in a plurality of layers through which the gas 61 flows from the lowermost layer toward the uppermost layer. That is, the outer wall 182 is formed outside the crucible 13 so as to have an outer shape larger than the outer shape of the bottom of the crucible 13, and the interlayer wall 183 is formed in a plurality of layers. Accordingly, each space surrounded by the outer wall 182 and sandwiched between the interlayer walls 183 becomes the above-described layered flow path 181. The outer wall 182 and the interlayer wall 183 are preferably made of a material having excellent thermal conductivity at a high temperature (for example, about 300 ° C. to 600 ° C.). For example, tungsten (W) and titanium (Ti) having corrosion resistance In the case where a metal material having low corrosion resistance such as copper (Cu) is used, in order to prevent corrosion due to the gas 61 on the surface in contact with the gas 61, for example, an oxide film It is preferable to apply a coating such as a nitride film, ceramics or enamel.

  An opening that communicates between the layered flow paths 181 is formed in an interlayer of each layer constituting the gas flow path 18, that is, the interlayer wall 183. For example, with respect to one layered flow path 181-1, the lower interlayer wall 183-1 is provided with an opening 184-1 through which the gas 61 flows into the layered flow path 181-1, and the upper interlayer wall 183 is provided. -2 is provided with an opening 184-2 through which the gas 61 flows out into the upper flow path 181-2. The openings 184-1 and 184-2 are alternately provided on the lower center side of the crucible 13 and the outer wall 182 side. Thus, since the opening part 184 (for example, 184-1, 185-2) which connects between each layered flow path 181 is formed, the gas supplied to the lowermost layered flow path 181-D. 61 is sequentially supplied to each upper layered flow path 181 through the opening 184 and discharged from the uppermost layered flow path 181 -U along the outer periphery of the crucible 13 toward the deposition substrate (not shown). Will come to be.

  Further, in each of the layered flow paths 181, for example, for the one layered flow path 181 (for example, 181-1), the lower interlayer wall 183-1 and the upper interlayer wall 183-2 have respective wall surfaces. In contrast, a plurality of fins 186 and fins 187 are formed in a state in which a flow path is secured between the opposing wall surfaces. The fins 186 and 187 are preferably made of a material excellent in thermal conductivity at a high temperature (for example, about 300 ° C. to 600 ° C.). For example, tungsten (W), titanium (Ti), or the like having corrosion resistance is high. In the case where a metal material having a low melting point can be used and a metal material having low corrosion resistance such as copper (Cu) is used, for example, an oxide film or a nitride film is used in order to prevent the gas 61 from corroding the surface in contact with the gas 61. It is preferable to apply a ceramic or enamel coating. As described above, since the plurality of fins 186 and 187 are formed in a state in which the flow paths are secured between the opposing wall surfaces alternately with respect to the respective wall surfaces, the gas is supplied to each fin 186 and 187. Since the gas 61 can sufficiently come into contact with each other, the heating efficiency of the gas 61 can be increased, and the gas 61 can be heated uniformly in each layered flow path 181.

  The fins 186 and 187 may be formed in an annular shape, for example, when viewed in the direction of the crucible 13 from the deposition target substrate 51 side, or may be arranged in an annular shape in a plurality of divided states. Also, the shape of the fins 186 and 187 is not limited to a shape that obstructs the gas flow. For example, the fins 186 and 187 may be provided perpendicularly to the wall surface as illustrated, or may be provided so as to be inclined in the gas flow direction. By providing the fins 186 and 187 perpendicularly to the wall surface of the interlayer wall, it is possible to take a long time for the gas flow to contact the surfaces of the fins 186 and 187, and the gas 61 can be sufficiently heated. . Further, when the fins 186 and 187 are provided so as to be inclined in the gas flow direction with respect to the wall surface of the interlayer wall, the gas flow can come into contact with the surfaces of the fins 186 and 187 and the gas flow can flow more smoothly. Become.

  Further, the gas flow path 18 is connected to gas supply portions 17 for supplying the gas 61 at a plurality of locations in the lowermost flow path 181 -D. Here, an example of connection at two locations is shown. Thus, since the gas supply unit 17 is connected to a plurality of locations of the lowermost flow path 181 -D, the lowermost flow path 181 -D is compared with the case where the gas 61 is supplied from one location. To be supplied uniformly.

  The heating source 15 may be embedded in each outer wall 182 of the gas flow path 18. The heating source 15 is a heater using a heating wire, for example. Thus, since the heating source 15 is installed so as to heat the outer wall 182 of the gas flow path 18, the gas flow path 18 is heated by the heating source 15.

  The vapor deposition apparatus 3 of the present invention can obtain the same functions and effects as those obtained by removing the functions and effects of the gas flow path 14 portion of the vapor deposition apparatus 2. Furthermore, since the heat insulating wall 16 is provided on the outer periphery of the crucible 13, the gas 61 heated by the gas flow path 18 provided at the lower part of the crucible 13 is not reduced in temperature from the outer periphery of the crucible 13. It is emitted in the direction of the vapor deposition substrate 51. Furthermore, since the gas flow path 18 is provided only on the lower side of the crucible 13, there is an advantage that the apparatus configuration is simplified.

  The vapor deposition method using the vapor deposition apparatus 3 is the same as the vapor deposition substrate 3 except that the gas 61 is supplied to the gas flow path 18 and heated and then supplied to the vapor deposition substrate through the guide side circumference of the crucible 13. This is the same as when the vapor deposition apparatus 2 is used. Therefore, even when vapor deposition is performed using the vapor deposition apparatus 3, it is possible to obtain the same operational effects as when vapor deposition is performed using the vapor deposition apparatus 2.

  Next, a fourth embodiment according to the vapor deposition apparatus and vapor deposition method of the present invention will be described with reference to a schematic cross section of the vapor deposition source of the vapor deposition apparatus shown in FIG. This 4th Example differs in the structure regarding a heat source in the said 1st-3rd Example, The other structure is the same as that of the said 1st-3rd Example. Therefore, in the following description, only a heating source different from the first to third embodiments will be described.

  As shown in FIG. 4, the heating source 15 may not be provided in the heat insulating wall as described in the first embodiment, but may be disposed on the side periphery of the gas flow path 14. The heating source 15 can employ a heating method such as lamp heating or heating with a heating wire. In the present embodiment, a heat insulating wall is not provided on the side periphery of the gas flow path 14 as in the first embodiment, but a heat reflecting wall (not shown) is provided outside the heating source 15 to provide the heating source 15. It is preferable to efficiently guide the heat radiation from the gas flow path 14. The configuration other than the heating source 15, the heat reflecting wall, and the heat insulating wall is the same as the configuration of the first embodiment. As in the first embodiment, it is also preferable to provide the heating source 151 on the lower side of the crucible 13 and the lower side of the gas flow path 14. Further, as in the present embodiment, the configuration in which the heating source 15 is not provided in the heat insulating wall and is arranged on the side periphery of the gas flow path is the same as that of the vapor deposition apparatus 2 in the second embodiment and the vapor deposition apparatus 3 in the third embodiment. Can be applied as well. Further, as in the present embodiment, the configuration in which the heating source 151 is provided below the gas flow path 14 and the crucible 13 is similarly applied to the vapor deposition apparatus 2 of the second embodiment and the vapor deposition apparatus 3 of the third embodiment. can do. The heating source 151 can also be used as a heating means (not shown) for the crucible 13.

  The fourth embodiment can obtain the same effects as the first to third embodiments. Furthermore, in the fourth embodiment, since the heat source 15 is provided outside the wall, there is an advantage that the maintenance of the heat source 15 is facilitated. There is also an advantage that a lamp heating method can be adopted.

  Next, a fifth embodiment of the vapor deposition apparatus and vapor deposition method of the present invention will be described with reference to the schematic configuration sectional views shown in FIGS. The fifth embodiment is an embodiment relating to the mounting position of the gas supply unit in the first to fourth embodiments, and the other configurations are the same as those of the first to fourth embodiments. Therefore, in the following description, a configuration related to the gas supply unit will be described. Here, as a representative, the configuration of the first embodiment will be described as an example. In the following description, numerical values in parentheses are reference numerals in the configurations of the second and third embodiments.

  As shown in FIG. 5 (1), the gas supply part 17 is connected to two places outside the lowermost layered channel 141 (181) of the gas channel 14 (18). In this case, the gas supply part 17 is arrange | positioned in the position which opposes. Accordingly, the crucible 13 is disposed at a position shifted from the center O by 180 degrees. As described above, when the gas supply unit 17 is connected to the outer side of the lowermost layered flow channel 141 (181), the upper layer side (deposition substrate (not shown) of the lowermost layered flow channel 141 (181). ) Side), an opening 145 (184) is formed on the crucible 13 side of the interlayer wall, and no opening is formed on the lower interlayer wall of the lowermost layered channel 141 (181). In the gas flow path 18, the opening formed in the lowermost layered flow path 181 is provided in a circular shape below the center of the crucible 13.

  As shown in FIG. 5 (2), the gas supply unit 17 is connected to four locations outside the lowermost layered channel 141 (181) of the gas channel 14 (18). In this case, the gas supply parts 17 are arranged at equal intervals in the circumferential direction. Accordingly, the crucible 13 is disposed at a position shifted by 90 degrees from the center O of the crucible 13. As described above, when the gas supply unit 17 is connected to the outer side of the lowermost layered flow channel 141 (181), the upper layer side (deposition substrate (not shown) of the lowermost layered flow channel 141 (181). ) Side), an opening 145 (184) is formed on the crucible 13 side of the interlayer wall, and no opening is formed on the lower interlayer wall of the lowermost layered channel 141 (181). In the gas flow path 18, the opening formed in the lowermost layered flow path 181 is provided in a circular shape below the center of the crucible 13.

  As shown in FIG. 6 (3), the gas supply unit 17 is connected to eight locations outside the lowermost layered channel 141 (181) of the gas channel 14 (18). In this case, the gas supply parts 17 are arranged at equal intervals in the circumferential direction. Therefore, it is disposed at a position shifted by 45 degrees from the center of the crucible 13. As described above, when the gas supply unit 17 is connected to the outer side of the lowermost layered flow channel 141 (181), the upper layer side (deposition substrate (not shown) of the lowermost layered flow channel 141 (181). ) Side), an opening 145 (184) is formed on the crucible 13 side of the interlayer wall, and no opening is formed on the lower interlayer wall of the lowermost layered channel 141 (181). In the gas flow path 18, the opening formed in the lowermost layered flow path 181 is provided in a circular shape below the center of the crucible 13.

  In the description with reference to FIG. 5 and FIG. 6, the number of the gas supply unit 17 is 2 places, 4 places, and 8 places. However, the present invention is not limited to the above configuration, and 3 places and 5 places. , 6 locations, 7 locations, or 9 locations or more are acceptable. In any case, it is preferable that the gas supply parts 17 are arranged at equal intervals in the circumferential direction when viewed from the center O of the crucible 13. Thus, by arrange | positioning at equal intervals, the gas 61 is uniformly introduce | transduced in the layered flow path 141 (181). Further, since the opening 145 (184) is formed in the upper interlayer wall 144-2 (183-2) on the side opposite to the side to which the gas supply unit 17 is connected, the gas supplied from the gas supply unit 17 61 does not stagnate in the layered channel 141 (181) and is guided to an upper channel not shown.

  In the configuration of the fifth embodiment, the gas supply unit 17 is connected to a plurality of locations of the layered flow channel 141 (181) located in the lowermost layer, so that the gas 61 is supplied from one location. Thus, the gas 61 is uniformly supplied to the layered channel 141 (181) located at the lowermost layer.

  Next, a sixth embodiment according to the vapor deposition apparatus and vapor deposition method of the present invention will be described with reference to schematic configuration cross-sectional views shown in FIGS. The sixth embodiment is an embodiment relating to the position where the opening is formed in the first to fifth embodiments, and the other configurations are the same as those of the first to fifth embodiments. Therefore, in the following description, a configuration related to the opening will be described. Here, as a representative, the configuration of the gas flow path 14 of the first and second embodiments will be described as an example.

  The configuration shown in FIG. 7A shows an even-numbered layered channel 141 when the lowermost layered channel to which the gas 61 is supplied is the first channel. The lower interlayer wall 144-1 is provided with an opening 145-1 through which the gas 61 flows into the layered flow path 141 on the crucible 13 side with respect to the even-numbered layered flow path 141. (Not shown) is provided with an opening 145-2 for allowing the gas 61 to flow out into an upper flow path (not shown) on the side facing the crucible 13, and the openings 145-1 and 145-2 are respectively It is formed in an annular shape.

  The configuration shown in FIG. 7 (2) shows the odd-numbered layered channels 141 except the first layer when the lowermost layered channel 141 to which the gas 61 is supplied is the first channel. It is a thing. With respect to the odd-numbered layered channel 141, the lower interlayer wall 144-1 is provided with an opening 145-1 through which the gas 61 flows into the layered channel 141 (181) on the side facing the crucible 13. The upper interlayer wall (not shown) is provided with an opening 145-2 for allowing the gas 61 to flow into an upper flow path (not shown) on the crucible 13 side, and the respective openings 145-1 and 145 are provided. -2 is formed in a ring shape.

  As described with reference to FIG. 7 above, the gas 61 supplied from the opening 145-1 smoothly flows to the opening 145-2 by arranging the opening 145-1 and the opening 145-2. The heater 61 can be surely brought into contact with the layered channel 141 and heated, and the gas 61 can be smoothly guided to the upper channel. In addition, also about the gas flow path 18 demonstrated by the said Examples 2 and 3, the opening part provided in an outer wall side can be formed cyclically | annularly similarly to having demonstrated above.

  The configuration shown in FIG. 8 shows the lowermost layer (first layer) layered channel 141 to which the gas 61 is supplied. The gas supply unit 17 is connected to a plurality of locations (two locations as an example in the drawing) outside the first layered channel 141. In this case, the gas supply parts 17 are arranged at equal intervals in the circumferential direction when viewed from the center O of the crucible 13. Further, the upper interlayer wall (not shown) of the first layered channel 141 has openings 145-2 through which the gas 61 flows out into the upper channel (not shown) at a plurality of locations on the crucible 13 side. (Two locations as an example in the drawing). Note that no opening is formed in the lower interlayer wall with respect to the first layered channel 141. The gas supply units 17 and the openings 145-2 are alternately arranged at equal intervals in the circumferential direction when viewed from the center O of the crucible 13, and the gas supply units 17 and the openings 145-2 are alternately arranged. It is arranged to become. Therefore, it is preferable that the number of gas supply units 17 connected and the number of openings 145-2 formed are the same.

  As described with reference to FIG. 8 above, by arranging the gas supply unit 17 and the opening 145-2, the gas 61 supplied from the gas supply unit 17 smoothly flows to the opening 145-2. Since the path (time) in contact with the layered channel 141 becomes longer, the heating efficiency can be increased and the gas 61 can be smoothly guided to the upper channel.

  The configuration shown in FIG. 9A shows the even-layered layered channel 141 when the lowermost layered channel 141 to which the gas 61 is supplied is the first-layered channel. The lower interlayer wall 144-1 has a plurality of openings 145-1 through which the gas 61 flows into the laminar flow path 141 on the crucible 13 side (as an example in the drawing) with respect to the even-layered flow path 141. Two openings), the upper interlayer wall (not shown) has openings 145-2 for allowing the gas 61 to flow into an upper flow path (not shown) on the side facing the crucible 13 (drawing). Then, as an example, the two openings 145-1 and 145-2 are arranged at equal intervals in the circumferential direction when viewed from the center O of the crucible 13. That is, the opening 145-2 is arranged between the openings 145-1 in the circumferential direction as viewed from the center O of the crucible 13.

  The configuration shown in FIG. 9 (2) shows the odd-numbered layered channel 141 except the first layer when the lowermost layered channel 141 to which the gas 61 is supplied is the first channel. It is a thing. With respect to the odd-numbered layered channel 141, the lower interlayer wall 144-1 has a plurality of locations on the side facing the crucible 13 with openings 145-1 through which the gas 61 flows into the layered channel 141. In the upper interlayer wall 144-2, openings 145-2 through which the gas 61 flows out into an upper flow path (not shown) are provided at a plurality of locations on the crucible 13 side (an example in the drawing). The two openings 145-1 and 145-2 are arranged at equal intervals in the circumferential direction when viewed from the center O of the crucible 13. That is, the opening 145-2 is arranged between the openings 145-1 in the circumferential direction as viewed from the center O of the crucible 13.

  As described with reference to FIG. 9 above, the gas 61 supplied from the opening 145-1 flows smoothly to the opening 145-2 by arranging the opening 145-1 and the opening 145-2. 61 has a longer path (time) in contact with the laminar flow path 141, so that the heating efficiency can be increased and the gas 61 can be smoothly guided to the upper flow path. In addition, also about the gas flow path 18 demonstrated by the said Example 2, 3, the opening part provided in an outer side wall side can be arrange | positioned in multiple places similarly to having demonstrated above.

  Next, a seventh embodiment according to the vapor deposition apparatus and vapor deposition method of the present invention will be described with reference to FIGS. The seventh embodiment is an embodiment related to a configuration in which a partition wall is provided in the layered flow path in the first to sixth embodiments, and an opening that secures a gas flow is formed in the partition wall. Other configurations except the partition wall are the same as those in the first to sixth embodiments. Therefore, in the following description, a configuration related to the partition wall provided in the layered flow path will be described. Here, as a representative, the configuration of the gas flow path 14 of the first and second embodiments will be described as an example.

  FIG. 10 shows the lowermost layer (first layer) layered channel 141 to which the gas 61 is supplied. The gas supply unit 17 is connected to a plurality of locations (two locations as an example in the drawing) outside the first layered channel 141 (141-1). In this case, the gas supply parts 17 are arranged at equal intervals in the circumferential direction when viewed from the center O of the crucible 13. In the drawing, since there are two gas supply parts 17, they are arranged at opposing positions. Further, the upper interlayer wall 144-2 of the first layered channel 141-1 has openings 145-2 through which the gas 61 flows out into the upper layer channel 141-2 at a plurality of locations on the crucible 13 side (drawing). Then, it is provided in two places as an example. Note that no opening is formed in the lower interlayer wall 144-1 with respect to the first layered flow path 141-1. The gas supply units 17 and the openings 145-2 are alternately arranged at equal intervals in the circumferential direction when viewed from the center O of the crucible 13, and the gas supply units 17 and the openings 145-2 are alternately arranged. It is arranged to become. Therefore, it is preferable that the number of gas supply units 17 connected and the number of openings 145-2 formed are the same.

  Further, in the first layered flow path 141, a plurality of partition walls 20 formed with openings 19 for ensuring the flow of gas in the layer are formed at equal intervals, for example. The partition wall 20 is alternately formed on the inner wall 142 on the crucible 13 side and the outer wall 143 (flow channel inner wall side) facing the crucible 13 side. The partition wall 20 is preferably made of a material having excellent thermal conductivity at a high temperature (for example, about 300 ° C. to 600 ° C.), and has a high melting point such as tungsten (W) or titanium (Ti) having corrosion resistance. In the case where a metal material can be used and a metal material with low corrosion resistance such as copper (Cu) is used, for example, an oxide film, a nitride film, It is preferable to apply a ceramic or enamel coating. As a result, the gas 61 supplied from the gas supply unit 17 to the first layered flow path 141 passes through each opening 19 and goes around each partition wall 20 toward the opening 145-2. At this time, since the partition wall 20 is alternately formed on the inner wall 142 on the crucible 13 side and the outer wall 143 (channel inner wall side) facing the crucible 13 side, the gas 61 flows along the partition wall 20. Since the gas flows in a zigzag manner, it becomes easy to heat the gas 61 through the outer wall 143, the interlayer wall 144, the fins 146 and 147 and the partition wall 20 heated by the heat radiated from the heating source 15. The gas 61 heated to the temperature can be released in the direction of the deposition target substrate (not shown).

  The partition wall 20 in which the opening 19 for ensuring the gas flow is formed can be similarly installed in the layered flow channel 141 above the second layer. These cases will be described below with reference to FIGS.

  FIG. 11 shows an even-numbered layered channel 141 (141-2) to which the gas 61 is supplied. With respect to the even-numbered layered channel 141-2, the lower interlayer wall 144-1 has openings 145-1 through which the gas 61 flows into the layered channel 141-2 at a plurality of locations on the crucible 13 side ( In the drawing, two openings are provided as an example), and an opening 145-2 through which the gas 61 flows out into the upper flow path 141-1 is provided on the upper interlayer wall 144-2 at a plurality of locations on the side facing the crucible 13 (drawing). Then, as an example, the two openings 145-1 and 145-2 are arranged at equal intervals in the circumferential direction when viewed from the center O of the crucible 13. That is, the opening 145-2 is arranged between the openings 145-1 in the circumferential direction as viewed from the center O of the crucible 13.

  Further, a plurality of partition walls 20 each having an opening 19 for ensuring the flow of gas in the layer are formed in each of the even-numbered layers of the flow paths 141-2. For example, the partition wall 20 is alternately formed on the inner wall 142 on the crucible 13 side and the outer wall 143 (channel inner wall side) facing the crucible 13 side. The partition wall 20 is preferably formed of the same material as that of the partition wall 20 provided in the first layered flow path 141-1. As a result, the gas 61 supplied to each of the even-numbered flow paths 141-2 from the opening 145-1 passes through each opening 19 and wraps around each partition wall 20 into the opening 145-2. Head. At this time, since the partition wall 20 is alternately formed on the inner wall 142 on the crucible 13 side and the outer wall 143 (channel inner wall side) facing the crucible 13 side, the gas 61 flows along the partition wall 20. Since the gas flows in a zigzag manner, it is easy to heat the gas 61 through the outer wall 143, the interlayer wall 144, the fins 146 and 147 and the partition wall 20 heated by heat radiated from a heating source (not shown). Thus, the gas 61 heated to a desired temperature can be released in the direction of the film formation substrate (not shown).

  FIG. 12 shows an odd-numbered layered channel 141 (141-1) excluding the first layer when the lowermost layered channel 141 to which the gas 61 is supplied is the first channel. Is. In contrast to the odd-numbered layered channel 141-1, the lower interlayer wall 144-1 has an opening 145-1 through which the gas 61 flows into the layered channel 141-1 on the side facing the crucible 13. Provided at a plurality of locations (two locations as an example in the drawing), the upper interlayer wall 144-2 has a plurality of locations on the crucible 13 side with openings 145-2 through which the gas 61 flows out into an upper flow path (not shown). (Two locations as an example in the drawing) The openings 145-1 and 145-2 are arranged so as to be at equal intervals in the circumferential direction when viewed from the center O of the crucible 13. That is, the opening 145-2 is arranged between the openings 145-1 in the circumferential direction as viewed from the center O of the crucible 13.

  Further, a plurality of partition walls 20 each having an opening 19 for ensuring a gas flow in the layer are formed in each of the odd-numbered layered flow paths 141-1. For example, the partition wall 20 is alternately formed on the inner wall 142 on the crucible 13 side and the outer wall 143 (channel inner wall side) facing the crucible 13 side. The partition wall 20 is preferably formed of the same material as the partition wall 20 provided in the first layered flow path 141. As a result, the gas 61 supplied from the opening 145-1 to each of the odd-numbered layered flow paths 141 passes through each opening 19 and goes around each partition wall 20 toward the opening 145-2. At this time, since the partition wall 20 is alternately formed on the inner wall 142 on the crucible 13 side and the outer wall 143 (channel inner wall side) facing the crucible 13 side, the gas 61 flows along the partition wall 20. Since the gas flows in a zigzag manner, it is easy to heat the gas 61 through the outer wall 143, the interlayer wall 144, the fins 146 and 147 and the partition wall 20 heated by heat radiated from a heating source (not shown). Thus, the gas 61 heated to a desired temperature can be released in the direction of the film formation substrate (not shown).

  As described above, the openings 19 are alternately formed on the crucible 13 side and the outer wall 143 of the flow channel facing the crucible 13 side for each partition wall 20 that partitions the respective layers. The gas 61 passing through flows through the entire area of each layer. For this reason, it becomes easy to heat the gas which flows through each layer through the wall of each layer from a heating source (not shown), and the gas heated to a desired temperature is directed toward the deposition target substrate (not shown). It can be released.

  Another embodiment of the partition wall provided in the layered flow path will be described with reference to FIG. As shown in FIG. 13, a polygonal partition wall 21 is formed in the layered flow channel 141. For example, a partition wall 21 formed in a number of hexagonal shapes (honeycomb shapes) as viewed from above can be used. The partition wall 21 may have a triangular shape, a quadrangular shape, a pentagonal shape, or a polygonal shape of a heptagonal shape or more. An opening 22 is formed in the partition wall 21 so that a gas 61 (indicated by an arrow) flows. The partition wall 21 is preferably made of a material excellent in thermal conductivity at a high temperature (for example, about 300 ° C. to 600 ° C.), and has a high melting point such as tungsten (W) or titanium (Ti) having corrosion resistance. In the case where a metal material can be used and a metal material with low corrosion resistance such as copper (Cu) is used, for example, an oxide film, a nitride film, It is preferable to apply a ceramic or enamel coating.

  In the above configuration, the gas 61 that has flowed into the layered flow channel 141 from the opening 145-1 flows through the opening 22 formed in the partition wall 21 in the direction of the opening 145-2. At this time, since each layer-like channel 141 is heated by a heating source (not shown), the partition wall 21 is also heated. Therefore, the gas 61 flows efficiently in the direction indicated by the arrow in the drawing while receiving heat from the partition wall 21, so that it is efficiently heated.

  The partition walls 20 and 21 can be installed in the same manner as the gas flow path 14 for the gas flow path 18 described in the second and third embodiments.

  Next, an eighth embodiment of the vapor deposition apparatus and vapor deposition method of the present invention will be described with reference to FIGS. The eighth embodiment is an embodiment related to the opening provided in the layered flow path in the first to seventh embodiments, and the other configuration except for the opening is the same as that of the first to seventh embodiments. is there. Therefore, in the following description, a configuration related to the opening provided in the layered flow path will be described. Here, as a representative, the gas flow path 14 described in the first and second embodiments will be described.

  As shown in FIG. 14 (1), an opening 145-2 is provided in the upper interlayer wall 144-2 constituting a part of the uppermost layered flow path to allow gas to flow out toward the deposition substrate. ing. The opening 145-2 is formed in an annular shape at a position close to the crucible 13, for example, along the outer periphery of the inner wall 142.

  Alternatively, as shown in FIG. 14 (2), an opening 145-2 that allows gas to flow out toward the deposition target substrate is formed in the upper interlayer wall 144-2 that constitutes a part of the uppermost layered flow path. Is provided. The opening 145-2 is formed in an annular shape at a position close to the outer wall 143 of the gas flow path, for example.

  Alternatively, as shown in FIG. 14 (3), an opening 145-2 that allows gas to flow out in the direction of the deposition substrate is formed in the upper interlayer wall 144-2 constituting a part of the uppermost layered flow path. Is provided. The opening 145-2 is formed in an annular shape between the crucible 13 and the outer wall 143 of the gas flow path.

  Since any one of the openings 145-2 is formed in an annular shape, the gas is heated to a desired temperature so as to surround the side periphery of the vapor of the vapor deposition material evaporated from the crucible 13. Since it becomes possible to release in the direction of the film formation substrate, it is possible to prevent the vapor of the vapor deposition material from jumping out of the gas released from the opening 145-2 and adhering to the inner wall of the chamber (not shown). In addition to making it possible to improve the utilization efficiency of the vapor deposition material, by adjusting the flow rate of the gas released from the opening 145-2, it is possible to improve the uniformity of the film thickness distribution formed on the deposition target substrate. The controllability of the film speed can be improved.

  The opening 145-2 formed in the upper interlayer wall 144-2 in the uppermost layered flow path may have a plurality of holes arranged in an annular shape. For example, as shown in FIG. 15 (1), a plurality of holes 148 may be annularly arranged in the upper interlayer wall 144-2. Alternatively, as shown in FIG. 15B, a plurality of holes 148 may be concentrically arranged in the upper interlayer wall 144-2.

  Alternatively, as shown in FIG. 16 (1), the plurality of holes 148 may be arranged concentrically so that the diameter of the holes 148 becomes smaller toward the outside from the crucible 13 side. . In this case, the gas flows into the uppermost layered flow path in order to smoothly discharge the gas flowing into the uppermost layered flow path toward the deposition target substrate (not shown). It is preferable that the opening (not shown) to be formed is formed on the outer wall 144 side constituting the flow path. Alternatively, as shown in FIG. 16 (2), the plurality of holes 148 may be concentrically arranged so that the diameter of the holes 148 increases toward the outside from the crucible 13 side. . In this case, the gas flows into the uppermost layered flow path in order to smoothly discharge the gas flowing into the uppermost layered flow path toward the deposition target substrate (not shown). The opening (not shown) is preferably formed on the inner wall 143 side (crucible 13 side) constituting the flow path.

  As described with reference to FIG. 16 above, a plurality of holes 148 (openings) for allowing gas to flow out are arranged in an annular shape on the upper interlayer wall 144-2 formed in at least the uppermost layered flow path. Then, the gas heated to a desired temperature can be discharged in the direction of the film formation substrate (not shown) so as to surround the gas gas of the vapor deposition material evaporated from the crucible 13. , The gas of the vapor deposition material can be prevented from jumping out of the gas emitted from the plurality of holes 148 and adhering to the inner wall of the chamber (not shown), and the utilization efficiency of the vapor deposition material can be improved. By adjusting the flow rate of the gas released from the plurality of holes 148, it is possible to improve the uniformity of the film thickness distribution formed on the film formation substrate and the controllability of the film formation rate.

  Moreover, the structure of the opening part demonstrated by the said FIG.14, FIG.15 and FIG.16 is applicable similarly also to the gas flow path 18 demonstrated in the said Example 3. FIG.

  Further, the configuration of the opening described with reference to FIG. 14, FIG. 15, and FIG. 16 has a layered structure up to about 3 to 5 layers below the uppermost layer in addition to the uppermost layered channel 141 of the gas channel 14. The same applies to the channel 141.

  Next, the openings formed in the even-numbered layered channel 141 in the gas channel 14 (18) will be described with reference to FIGS.

  FIG. 17 shows an even-numbered layered channel 141 (141-2) through which the gas 61 is supplied in the gas channel 14. With respect to the even-numbered layered channel 141-2, the lower interlayer wall 144-1 has openings 145-1 through which the gas 61 flows into the layered channel 141-2 at a plurality of locations on the crucible 13 side ( The upper interlayer wall 144-2 is provided with an opening 145-2 for allowing the gas 61 to flow into the upper flow path 141-1 and is opposed to the crucible 13 as an example. The openings 145-1 and 145-2 are provided in a plurality of locations (eight locations as an example in the drawing) on the side to be operated, and the respective openings 145-1 and 145-2 are arranged at equal intervals in the circumferential direction when viewed from the center O of the crucible 13. It arrange | positions so that it may become an angle and it may be cyclic | annular. That is, the opening 145-2 is arranged between the openings 145-1 in the circumferential direction as viewed from the center O of the crucible 13.

  FIG. 18 shows an odd-numbered layered channel 141-1 when the lowermost layered channel 141 to which the gas 61 is supplied in the gas channel 14 is used as the first channel. . With respect to the odd-numbered layered channel 141-1, the lower interlayer wall 144-1 has an opening 145-1 through which the gas 61 flows into the layered channel 141-1 on the side facing the crucible 13. A crucible is provided in a plurality of places (eight places as an example in the drawing) so as to be annularly arranged, and the upper interlayer wall 144-2 has an opening 145-2 through which gas 61 flows out into the upper flow path 141-2. It is provided so as to be arranged in a ring shape at a plurality of positions on the 13th side (eight positions as an example in the drawing). They are arranged at an angle. That is, the opening 145-2 is arranged between the openings 145-1 in the circumferential direction as viewed from the center O of the crucible 13.

  As described above, since a plurality of openings 145-1 through which the gas 61 flows into the layered flow channel 141 are provided and arranged in an annular shape, the gas 61 supplied from the lower layer is uniformly layered. Since the gas can be led into the gas, it becomes possible to heat the gas evenly. Further, since a plurality of openings 145-2 for allowing the gas 61 to flow out are provided in the layered flow channel 141 and are arranged in an annular shape, the gas 61 supplied to the upper layer is uniformly guided into the upper layer. Therefore, it becomes possible to heat the gas evenly.

  In the configurations described in the first to eighth embodiments, the shape of the crucible 13 was a cylindrical shape. For example, as shown in FIG. 19, the shape of the crucible 13 is a rectangular tube shape. Good. In this case, the gas flow path 14 has a shape along the shape of the crucible 13. The shape of the opening 145 that guides the gas formed in the flow path 14 to the upper layer is also a square shape. Moreover, the gas supply part 17 which supplies the gas 61 to the gas flow path 14 is connected to the side wall surface of the gas flow path 14, for example. In the drawing, the gas supply unit 17 is connected to each side wall. However, for example, the gas supply unit 17 may be connected to only one of the opposing side walls, or a plurality of one side wall may be connected. The structure which connects the gas supply part 17 may be sufficient. In any configuration, the gas supply unit 17 is connected to the lowermost layered flow channel 141 and selects an arrangement in which the gas 61 supplied in the layered flow channel 141 is uniformly distributed. It is preferable. Therefore, it is desirable that the gas supply unit 17 is basically connected to the outer wall 143 of the gas flow path 14 at the position to be pointed.

  In the vapor deposition apparatus and vapor deposition method of the present invention, the wall of the gas 61 (for example, carrier gas) can be provided so as to surround the vapor deposition source, so that the gas of the vapor deposition material (for example, organic raw material) is removed from the carrier gas. This prevents the material from jumping out and sticking to the inner wall of the chamber, improving the utilization efficiency of the vapor deposition material, and improving the uniformity of film thickness distribution and controllability of the film formation rate by adjusting the carrier gas flow rate. Is possible. Further, by using an organic gas containing an organic vapor deposition material instead of an inert gas as the carrier gas, the effect of co-deposition can be obtained with one vapor deposition container. Further, by alternately switching the organic gas phase material and the inert gas as the carrier gas raw material, it is possible to continuously form a co-deposited film and a single film deposited. Furthermore, the use efficiency of the raw material can be further improved by using the hot wall in combination.

  The vapor deposition apparatus and vapor deposition method of the present invention can be applied to the use of vapor deposition of a metal film, an inorganic film, etc. in addition to the vapor deposition of an organic film used in an organic electroluminescence apparatus.

BRIEF DESCRIPTION OF THE DRAWINGS It is drawing which showed 1st Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention, (1) is the schematic structure cross section which showed the outline | summary of the vapor deposition apparatus, (2) showed the vapor deposition source of the vapor deposition apparatus. It is a general | schematic structure cross section, (3) is the A section enlarged sectional view of (2) figure. It is drawing which showed 2nd Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention, (1) is schematic structure cross section which showed the vapor deposition source of the vapor deposition apparatus, (2) is B section of (1) figure The expanded sectional view is shown, (3) is the C section enlarged sectional view of (1) figure. It is drawing which showed 3rd Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention, (1) is schematic structure cross section which showed the vapor deposition source of the vapor deposition apparatus, (2) is the gas flow of (1) figure It is an expanded sectional view of a path. It is a schematic structure cross section of the vapor deposition source of the vapor deposition apparatus which showed 4th Example concerning the vapor deposition apparatus and vapor deposition method of this invention. It is schematic structure sectional drawing which showed 5th Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention. It is schematic structure sectional drawing which showed 5th Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention. It is schematic structure sectional drawing which showed 6th Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention, and is drawing which showed the shape and arrangement | positioning of the opening part. It is schematic structure sectional drawing which showed 6th Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention, and is drawing which showed the shape and arrangement | positioning of the opening part. It is schematic structure sectional drawing which showed 6th Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention, and is drawing which showed the shape and arrangement | positioning of the opening part. It is schematic structure sectional drawing which showed 7th Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention, and is drawing shown about the shape and arrangement | positioning of a partition wall. It is schematic structure sectional drawing which showed 7th Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention, and is drawing shown about the shape and arrangement | positioning of a partition wall. It is schematic structure sectional drawing which showed 7th Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention, and is drawing shown about the shape and arrangement | positioning of a partition wall. It is schematic structure sectional drawing which showed 7th Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention, and is drawing shown about the shape and arrangement | positioning of a partition wall. It is schematic structure sectional drawing which showed 8th Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention, and is drawing shown about the shape and arrangement | positioning of the opening part. It is schematic structure sectional drawing which showed 8th Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention, and is drawing shown about the shape and arrangement | positioning of the opening part. It is schematic structure sectional drawing which showed 8th Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention, and is drawing shown about the shape and arrangement | positioning of the opening part. It is schematic structure sectional drawing which showed 8th Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention, and is drawing shown about the shape and arrangement | positioning of the opening part. It is schematic structure sectional drawing which showed 8th Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention, and is drawing shown about the shape and arrangement | positioning of the opening part. It is schematic structure sectional drawing which showed 9th Example which concerns on the vapor deposition apparatus and vapor deposition method of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Deposition apparatus, 11 ... Chamber, 12 ... Deposition source, 13 ... Crucible, 14 ... Gas flow path, 15 ... Heat source, 141 ... Layered flow path, 145 ... Opening

Claims (17)

A deposition apparatus in which a deposition source and a deposition target substrate are provided facing each other in a chamber,
The deposition source is
A crucible for evaporating the deposition material;
A gas flow path for supplying gas toward the deposition substrate along the outer peripheral side of the crucible;
A heating source for heating the gas flow path,
The gas flow path is composed of a layered flow path composed of a plurality of layers through which gas flows from the lowermost layer toward the uppermost layer, and an opening is formed in the uppermost flow path toward the gas flow toward the deposition substrate. A vapor deposition apparatus characterized by comprising: The said gas flow path is formed in the outer periphery of the said crucible. The vapor deposition apparatus of Claim 1 characterized by the above-mentioned. The vapor deposition apparatus according to claim 1, wherein the gas flow path is formed on a lower surface side of the crucible. The vapor deposition apparatus according to claim 1, wherein the gas flow path is formed on an outer periphery of the crucible and a lower portion of the crucible. The vapor deposition apparatus according to claim 1, wherein the heat source is disposed on at least one of or both of an outer peripheral side of the gas flow path and a lower side of the gas flow path. The vapor deposition apparatus according to claim 1, wherein the gas supply unit that supplies the gas to the gas flow path is connected to a plurality of locations on the lowermost layer of the gas flow path. The vapor deposition apparatus according to claim 1, wherein an opening that communicates between the layers is formed between the layers constituting the gas flow path. The opening formed in the one layer consists of at least two,
At least one of the openings is an opening through which gas flows into the layer,
The vapor deposition apparatus according to claim 1, wherein the at least one opening is an opening through which gas flows out to an upper layer. 2. The vapor deposition apparatus according to claim 1, wherein a partition wall having an opening for ensuring a gas flow in the layer is formed in each layer constituting the gas flow path. A vapor deposition method for depositing a vapor deposition material evaporated from the vapor deposition source on the vapor deposition substrate using a vapor deposition apparatus provided with a vapor deposition source and a vapor deposition substrate facing each other in a chamber,
The deposition source is
A crucible for evaporating the deposition material;
A gas flow path for supplying gas toward the deposition substrate along the outer peripheral side of the crucible;
A heating source for heating the gas flow path,
The gas flow path is composed of a plurality of layered flow paths configured to flow gas from the lowermost layer to the uppermost layer, and an opening is formed in the uppermost flow path to direct the gas flow toward the deposition substrate. A vapor deposition method characterized by comprising: The said gas flow path is formed in the outer periphery of the said crucible. The vapor deposition method of Claim 10 characterized by the above-mentioned. The vapor deposition method according to claim 10, wherein the gas flow path is formed on a lower surface side of the crucible. The said gas flow path is formed in the outer periphery of the said crucible, and the lower part of the said crucible. The vapor deposition method of Claim 10 characterized by the above-mentioned. The vapor deposition method according to claim 10, wherein the heat source is installed on at least one of or both of an outer peripheral side of the gas flow path and a lower side of the gas flow path. The vapor deposition method according to claim 10, wherein a gas supply unit that supplies a gas to the gas flow path is connected to a plurality of locations in a lowermost layer of the gas flow path. The opening formed in the one layer consists of at least two,
At least one of the openings is an opening through which gas flows into the layer,
The vapor deposition method according to claim 10, wherein at least one opening is an opening through which gas flows out to an upper layer. The vapor deposition method according to claim 10, wherein a partition wall having an opening for ensuring a gas flow in the layer is formed in each layer constituting the gas flow path.

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