JP2013229446A - Solid-state image sensor and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid-state image sensor capable of effectively suppressing the occurrence of color mixture, and a method for manufacturing the same.SOLUTION: A solid-state image sensor 1 includes: a substrate 10 in which a plurality of photoelectric conversion parts 11 for photoelectrically converting light incident from an upper surface of the substrate 10 are provided; a plurality of color filter parts 34 which are provided immediately above the photoelectric conversion parts 11 respectively and transmit light of a predetermined wavelength; and light shielding parts 32 for blocking transmission of light. Each of the light shielding parts 32 is provided between adjacent color filter parts 34.

Description

  The present invention relates to a solid-state imaging device represented by a complementary metal oxide semiconductor (CMOS) image sensor, a charge coupled device (CCD) image sensor, and the like, and a method for manufacturing the same.

  In recent years, solid-state imaging devices such as CMOS image sensors and CCD image sensors have been installed in imaging devices such as digital video cameras and digital still cameras, and various electronic devices equipped with imaging functions such as camera-equipped mobile phones, scanners, and facsimiles. Has been. In the solid-state imaging device, for example, a photoelectric conversion unit including a photodiode generates a charge by photoelectric conversion, and a signal constituting the image data is generated by amplifying a potential due to the charge.

  The solid-state imaging device includes a color filter unit that transmits light of a predetermined wavelength (for example, red, green, or blue light) and enters the corresponding photoelectric conversion unit, thereby generating color image data. However, when light that has passed through the color filter unit enters a photoelectric conversion unit other than the corresponding photoelectric conversion unit, color mixing (crosstalk) occurs, resulting in a problem that the color reproducibility of the image data decreases. .

  In particular, in a back-illuminated solid-state imaging device, a circuit unit made of metal wiring or the like is not provided between the photoelectric conversion unit and the color filter unit. For this reason, in the back-illuminated solid-state imaging device, the distance between the photoelectric conversion unit and the color filter unit can be shortened to increase sensitivity, but the circuit unit cannot block light and color mixing occurs. It becomes easy.

  Therefore, for example, Patent Documents 1 and 2 propose a back-illuminated solid-state imaging device having a light shielding portion for preventing color mixing in a layer provided between a color filter portion and a photoelectric conversion portion. Yes.

JP 2011-40454 A JP 2011-210981 A

  However, in the solid-state imaging device proposed in Patent Documents 1 and 2, when light passes through the color filter unit, the light may leak to the adjacent color filter unit (the adjacent pixel). . That is, it is a problem because the suppression of color mixing can be insufficient.

  Accordingly, an object of the present invention is to provide a solid-state imaging device capable of effectively suppressing the occurrence of color mixing and a method for manufacturing the solid-state imaging device.

  In order to achieve the above object, the present invention provides a substrate having a plurality of photoelectric conversion units for photoelectrically converting light incident from the upper surface, and a light having a predetermined wavelength provided immediately above each of the photoelectric conversion units. A solid-state imaging device comprising: a plurality of color filter portions that transmit light; and a light shielding portion that blocks light transmission, wherein the light shielding portion is provided between the adjacent color filter portions.

  According to this solid-state imaging device, by providing a light shielding portion between adjacent color filter portions, when light passes through the color filter portion, it is likely to leak into the adjacent color filter portion (adjacent pixel). It is possible to block the light that does.

  Furthermore, in the solid-state imaging device having the above characteristics, it is preferable that the light-shielding portion has a lattice shape in plan view and the color filter portion is surrounded by the light-shielding portion.

  According to this solid-state imaging device, when light passes through the color filter unit, it is possible to more effectively block light that is about to leak into the adjacent color filter unit (adjacent pixel). .

  Furthermore, in the solid-state imaging device having the above characteristics, it is preferable that the thickness of the grid of the light shielding portion in a plan view is 10 nm or more and 200 nm or less.

  According to this solid-state imaging device, it is easy to form the light shielding part as designed, and light that enters the color filter part is prevented from being applied to the light shielding part, causing vignetting and lowering the sensitivity. It becomes possible to do.

  Furthermore, in the solid-state imaging device having the above characteristics, it is preferable that the thickness of the light shielding portion is 200 nm or more and 1000 nm or less.

  According to this solid-state imaging device, since the film thickness of the color filter portion can be set to a suitable size, the spectral characteristics and sensitivity of the color filter portion can be made suitable.

  Furthermore, the solid-state imaging device having the above characteristics may further include a circuit unit that controls charges generated by photoelectric conversion of the photoelectric conversion unit, and the circuit unit may be provided on a lower surface side of the substrate.

  As described above, since the circuit portion is formed on the lower surface side of the substrate, even if it is a back-illuminated solid-state imaging device in which light shielding by the circuit portion cannot be expected, by providing a light shielding portion between adjacent color filter portions. When light passes through the color filter section, it is possible to block light that is about to leak into the adjacent color filter section (adjacent pixel).

  Furthermore, in the solid-state imaging device having the above characteristics, it is preferable that the light shielding portion is made of at least one of aluminum, copper, tungsten, titanium, and titanium nitride.

  According to this solid-state imaging device, when light is transmitted through the color filter unit, it is possible not only to block but also reflect the light that leaks into the adjacent color filter unit (the adjacent pixel). It becomes possible. Accordingly, since the ratio of the light that passes through the color filter portion is incident on the photoelectric conversion portion immediately below the light is increased, the sensitivity can be increased.

  In the present invention, a light-shielding film made of a material that blocks light transmission is formed on a surface of a wafer including a substrate provided with a plurality of photoelectric conversion portions for photoelectrically converting light incident from the upper surface. A light shielding film forming step to form a light shielding part by selectively removing a portion of the light shielding film directly above each photoelectric conversion portion until a base is exposed; And a color filter portion forming step of forming a plurality of color filter portions that transmit light of a predetermined wavelength adjacent to each other so that the light shielding portion is sandwiched therebetween. I will provide a.

  Further, the present invention provides a mask film forming step of forming a mask film on a surface on the upper surface side of a wafer provided with a substrate in which a plurality of photoelectric conversion portions for photoelectrically converting light incident from the upper surface is provided, A mask portion forming step for forming a mask portion by selectively removing other portions of the mask film until the underlying surface is exposed, leaving a portion directly above each of the photoelectric conversion portions; and the wafer Forming a light-shielding film made of a material that blocks light transmission on the surface of the upper surface side of the wafer, and forming a light-shielding film that fills a gap between adjacent mask parts; and until the mask part is exposed The light shielding unit includes a light shielding part forming step of forming a light shielding part by removing the surface on the upper surface side and then removing the mask part, and a plurality of color filter parts that transmit light of a predetermined wavelength. while It and a color filter portion forming step of forming by adjacent so as to be interposed to provide a method for manufacturing a solid-state imaging device according to claim.

  According to these solid-state imaging device manufacturing methods, it is possible to easily manufacture a solid-state imaging device having a structure in which a light shielding portion is provided between adjacent color filter portions as described above.

  According to the solid-state imaging device having the above characteristics, when light is transmitted through the color filter unit, it is possible to block light that is about to leak into the adjacent color filter unit (the adjacent pixel). Therefore, it is possible to effectively suppress the occurrence of color mixing.

  Further, according to this solid-state imaging device, since the light shielding portion is provided in the layer in which the color filter portion is formed, it is not necessary to add a layer for performing light shielding separately on the upper surface side of the substrate. Therefore, the distance between the color filter unit and the photoelectric conversion unit can be shortened to increase the sensitivity.

FIG. 3 is a cross-sectional view illustrating a structural example of a solid-state imaging element according to an embodiment of the present invention. FIG. 3 is a cross-sectional view illustrating a structural example of a solid-state imaging element according to an embodiment of the present invention. Sectional drawing which shows the 1st example of the manufacturing method of the solid-state image sensor which concerns on embodiment of this invention. Sectional drawing which shows the 1st example of the manufacturing method of the solid-state image sensor which concerns on embodiment of this invention. Sectional drawing which shows the 1st example of the manufacturing method of the solid-state image sensor which concerns on embodiment of this invention. Sectional drawing which shows the 1st example of the manufacturing method of the solid-state image sensor which concerns on embodiment of this invention. Sectional drawing which shows the 1st example of the manufacturing method of the solid-state image sensor which concerns on embodiment of this invention. Sectional drawing which shows the 2nd example of the manufacturing method of the solid-state image sensor which concerns on embodiment of this invention. Sectional drawing which shows the 2nd example of the manufacturing method of the solid-state image sensor which concerns on embodiment of this invention. Sectional drawing which shows the 2nd example of the manufacturing method of the solid-state image sensor which concerns on embodiment of this invention. Sectional drawing which shows the 2nd example of the manufacturing method of the solid-state image sensor which concerns on embodiment of this invention. Sectional drawing which shows the 2nd example of the manufacturing method of the solid-state image sensor which concerns on embodiment of this invention.

<< Solid-state imaging device >>
First, a structural example of a solid-state imaging device according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2. 1 and 2 are cross-sectional views showing a structural example of a solid-state imaging device according to an embodiment of the present invention. 2 is a cross-sectional view showing an AA cross section of FIG. Further, in the following, for the sake of concrete description, a case where the solid-state imaging device according to the embodiment of the present invention is a backside illumination type CMOS image sensor will be exemplified.

  As shown in FIG. 1, the solid-state imaging device 1 includes a substrate 10, a photoelectric conversion unit 11 that is provided in the substrate 10 and photoelectrically converts light incident from the upper surface 101 of the substrate 10 to generate charges, and a substrate 10, a circuit unit 20 that is provided on the lower surface 102 (the surface opposite to the upper surface 101) and controls charges generated by photoelectric conversion of the photoelectric conversion unit 11, and a first insulating film 31 that is provided on the upper surface 101 of the substrate 10. A light shielding portion 32 provided on a part of the upper surface of the first insulating film 31 to block light transmission, and a second insulating film 33 provided so as to cover the upper surface of the first insulating film 31 and the upper surface and side surfaces of the light shielding portion 32. A color filter unit 34 which is provided adjacently so that the light shielding unit 32 is sandwiched therebetween and transmits light of a predetermined wavelength (for example, red, green, or blue light), the color filter unit 34 and the second insulation. Set on top of membrane 33 Includes a microlens portion 35 leading to the color filter unit 34, the condenses incident light is. The upper surface 101 of the substrate 10 corresponds to the “back surface” of the backside illumination type solid-state imaging device 1.

  In the solid-state imaging device 1, the microlens unit 35, the color filter unit 34, and the charge storage unit 11 are arranged in a line with respect to a direction (vertical direction in FIG. 1) perpendicular to the upper surface 101 and the lower surface 102 of the substrate 10. Each column constitutes each pixel. Further, these pixels are arranged in a grid pattern in a plane parallel to the upper surface 101 and the lower surface 102 of the substrate 10, for example. Specifically, for example, these pixels are arranged in a Bayer array when paying attention to the wavelength (color) of light transmitted by the color filter unit 34.

  The substrate 10 (or the well of the substrate 10) is made of, for example, p-type or n-type silicon. For example, the photoelectric conversion units 11 are provided in a grid pattern in the substrate 10, and pixel separation units 12 that prevent leakage of electric charges between adjacent photoelectric conversion units 11 are provided at respective boundaries. The photoelectric conversion unit 11 includes a charge storage unit 111 that stores charges generated by photoelectric conversion.

  The pixel separation unit 12 is made of a semiconductor having the same conductivity type as that of the substrate 10 (or the well of the substrate 10), but having a higher impurity concentration. The charge storage unit 111 is made of a semiconductor having a conductivity type different from that of the substrate 10 (or the well of the substrate 10). Each photoelectric conversion unit 11 includes a photodiode formed by the substrate 10 (or the well of the substrate 10) and the charge storage unit 111. When the substrate 10 (or the well of the substrate 10) is p-type and the charge storage unit 111 is n-type, electrons generated by the photoelectric conversion unit 11 through photoelectric conversion are stored in the charge storage unit 111. When the substrate 10 (or the well of the substrate 10) is n-type and the charge storage unit 111 is p-type, holes generated by the photoelectric conversion unit 11 by photoelectric conversion are stored in the charge storage unit 111. .

  The pixel separation unit 12 and the charge storage unit 111 can be formed, for example, by ion-implanting p-type impurities or n-type impurities into the substrate 10. For example, when the substrate 10 is made of silicon, boron or the like can be used as a p-type impurity. In this case, phosphorus, arsenic, or the like can be used as the n-type impurity.

  The circuit unit 20 controls a charge generated by photoelectric conversion of the photoelectric conversion unit 11 (for example, accumulates charges in the charge accumulation unit 111 or moves charges accumulated in the charge accumulation unit 111). A circuit member 21 made of metal or wiring is embedded in, for example, silicon oxide.

  The first insulating film 31 is made of, for example, at least one of silicon oxide (refractive index 1.45), silicon oxynitride (refractive index 1.8), and silicon nitride (refractive index 2.0). Specifically, for example, it is preferable that the first insulating film 31 has a stacked structure in which silicon nitride with a thickness of 50 nm is formed on silicon oxide with a thickness of 20 nm. When the first insulating film 31 has such a laminated structure, reflection of light incident on the substrate 10 can be suppressed and sensitivity can be increased.

  As shown in FIG. 2, the light shielding portion 32 has a lattice shape in a plan view (the same applies when viewing a plane parallel to the upper surface 101 and the lower surface 102 of the substrate 10). Then, one color filter portion 34 is provided inside one grid formed by the lattice. That is, in the plan view, the periphery of the color filter unit 34 is surrounded by the light shielding unit 32. Further, as shown in FIG. 1, the light shielding portion 32 surrounds the color filter portion 34 also in a direction perpendicular to the cross section shown in FIG. 2 (up and down direction in FIG. 1). Therefore, the light shielding portion 32 is a three-dimensional “partition” with respect to the color filter portion 34.

  In the solid-state imaging device 1, by providing the light shielding part 32 serving as the partition, when light passes through the color filter part 34, the light that is about to leak into the adjacent color filter part 34 (the adjacent pixel). Shut off.

  The light shielding part 32 is preferably made of, for example, at least one of aluminum, copper, tungsten, titanium, and titanium nitride. In this case, when light passes through the color filter unit 34, it is possible not only to block but also reflect the light that is about to leak into the adjacent color filter unit (the adjacent pixel). Therefore, the ratio of the light that passes through the color filter unit 34 that is incident on the photoelectric conversion unit 11 immediately below the light filter unit 34 increases, so that the sensitivity can be increased.

  Furthermore, it is preferable that the light shielding part 32 is made of tungsten or silicon nitride from the viewpoint of suitably reflecting light. Specifically, for example, the light shielding portion 32 is preferably a laminated structure in which tungsten is formed on silicon nitride. When the light shielding portion 32 has such a laminated structure, it is possible to make it difficult to peel off tungsten compared to the case where tungsten is directly formed on the first insulating film 31.

  For example, the second insulating film 33 is made of at least one of silicon oxide, silicon oxynitride, and silicon nitride. By providing the second insulating film 33, contact between the light shielding portion 32 and the color filter portion 34 is prevented, so that the contamination of the light shielding portion 32 by the color filter portion 34 (for example, due to chlorine contained in the color filter portion 34, Corrosion of the metal forming the light shielding portion 32) can be prevented. The thickness of the second insulating film 33 is preferably as small as possible. For example, the thickness is preferably set to 1 nm or more and 50 nm or less. Specifically, for example, when the film thickness of the second insulating film 33 is about 20 nm, it is possible to achieve a suitable thickness and effectively prevent contact between the light shielding part 32 and the color filter part 34. preferable.

  The color filter unit 34 is made of, for example, a resin containing a pigment, and the pigment has a property of selectively transmitting light having a predetermined wavelength. Although the spectral characteristics of the color filter unit 34 can be adjusted to some extent by the pigment concentration, it depends on the film thickness of the color filter unit 34. Specifically, the spectral characteristics can be improved as the film thickness of the color filter section 34 is increased. However, as the film thickness of the color filter portion 34 is increased, the transmittance is decreased and the sensitivity is decreased.

  The color filter part 34 is provided inside the grid of the lattice formed by the light shielding part 34 as described above. Therefore, the film thickness of the color filter part 34 depends on the film thickness of the light shielding part 34. Therefore, from the viewpoint of making the spectral characteristics and sensitivity of the color filter part 34 suitable, it is preferable that the film thickness of the light shielding part 34 is 200 nm or more and 1000 nm or less. Further, it is more preferable that the thickness of the light shielding portion 34 is 300 nm or more and 800 nm or less.

  The microlens part 35 is made of, for example, resin, and has a convex shape in order to collect incident light on the color filter part 34. Here, if the grid thickness D of the light shielding part 32 shown in FIG. 2 is too small, it becomes difficult to form the light shielding part 32 as designed. If the grid thickness D of the light shielding part 32 is too large, the light collected by the microlens part 35 is applied to the light shielding part 32, causing vignetting and lowering the sensitivity. Therefore, from these viewpoints, it is preferable that the lattice thickness D of the light shielding portion 32 is 10 nm or more and 200 nm or less. Specifically, for example, when the pitch of the pixels of the solid-state imaging device 1 is 1000 nm or more and 2000 nm or less, it is preferable that the grating thickness D of the optical unit 32 is 10 nm or more and 120 nm or less.

  In each pixel, the center of the microlens unit 35, the center of the mesh formed by the light shielding unit 32 (the center of the color filter unit 34), and the center of the photoelectric conversion unit 11 are the upper surface 101 and the lower surface 102 of the substrate 10. Is preferably arranged in a line with respect to a direction perpendicular to the vertical direction (the vertical direction in FIG. 1), since light can be efficiently incident on the photoelectric conversion unit 11.

  The light incident on the solid-state imaging device 1 is collected by the microlens unit 35 and passed to the color filter unit 34. The color filter unit 34 selectively transmits light having a predetermined wavelength. At this time, the light that leaks to the adjacent color filter unit 34 (the adjacent pixel) is blocked (and reflected) by the light blocking unit 32. Then, the light that has passed through the color filter part 34 passes through the second insulating film 33 and the first insulating film 31 and enters the photoelectric conversion part 11 in the substrate 10 from the upper surface 101. In the photoelectric conversion unit 11, electrons and holes are generated by photoelectric conversion of incident light, and one of them is stored in the charge storage unit 11.

  As described above, in the solid-state imaging device 1, when the light is transmitted through the color filter unit 34 by providing the light shielding unit 32 between the adjacent color filter units 34, the adjacent color filter unit 34 (adjacent color filter unit 34). It is possible to block light that leaks into the pixel. Therefore, it is possible to effectively suppress the occurrence of color mixing.

  In particular, when the light-shielding part 32 is formed in a lattice shape in plan view so that the periphery of the color filter part 34 is surrounded by the light-shielding part 32, when light passes through the color filter part 34, the light-shielding part 32 is adjacent to it. It is possible to more effectively block light that is about to leak into the color filter unit 34 (adjacent pixels).

  In addition, since the circuit unit 20 is formed on the lower surface 102 side of the substrate 10, even when the back-illuminated solid-state imaging device 1 is not expected to be shielded from light by the circuit unit 20, when light passes through the color filter unit 34. It is possible to block light that is about to leak into the adjacent color filter unit 34 (adjacent pixel).

  Further, in the solid-state imaging device 1, since the light shielding portion 32 is provided in the layer in which the color filter portion 34 is formed, it is not necessary to add a separate light shielding layer on the upper surface 101 side of the substrate 10. Therefore, the distance between the color filter unit 34 and the photoelectric conversion unit 11 can be shortened, and the sensitivity can be increased.

<< Method for Manufacturing Solid-State Image Sensor >>
<First example>
Next, an example of a method for manufacturing a solid-state imaging device according to the embodiment of the present invention will be described with reference to FIGS. Initially, the 1st example of the manufacturing method of the solid-state image sensor which concerns on embodiment of this invention is demonstrated with reference to FIGS. 3-7 is sectional drawing which shows the 1st example of the manufacturing method of the solid-state image sensor concerning embodiment of this invention. 3 to 7 show the same cross section as the cross section shown in FIG.

  As shown in FIG. 3, in the first example of the method for manufacturing the solid-state imaging device 1 according to the embodiment of the present invention, by first performing ion implantation or the like on the substrate 10, a photoelectric conversion unit is formed in the substrate 10. 11 and the pixel separator 12 are formed. Then, the circuit unit 20 is formed on the lower surface 102 of the substrate 10, and the first insulating film 31 is formed on the upper surface 101 of the substrate 10.

  Next, as shown in FIG. 4, a light shielding film 32 a made of a material that blocks light transmission is formed on the upper surface of the first insulating film 31 (over the entire upper surface of the wafer).

  Next, as shown in FIG. 5, by selectively removing a portion of the light shielding film 32 a immediately above each photoelectric conversion unit 11 until the underlying first insulating film 31 is exposed, the light shielding unit 32 is formed. Thereby, the light-shielding part 32 which becomes a grid | lattice form by planar view as mentioned above is formed. Note that when the light shielding film 32a is selectively removed, etching using a technique such as photolithography may be performed.

  Next, as shown in FIG. 6, the second insulating film 33 is formed so as to cover the upper surface of the first insulating film 31 and the upper surface and side surfaces of the light shielding portion 32 (over the entire upper surface of the wafer).

  Next, as shown in FIG. 7, the color filter part 34 is formed adjacent to each other so that the light shielding part 32 is sandwiched therebetween. For example, at this time, a material (for example, a photosensitive resin) that forms a color filter portion 34 that transmits light of a certain wavelength is filled inside the grid of the lattice formed by the light shielding portion 32, and the light of the certain wavelength is transmitted. The color filter portion 34 that transmits light of a certain wavelength may be formed by selectively exposing the pixel to be formed and further developing the pixel. Note that the color filter portion 34 that transmits light of other wavelengths can also be formed by the same method.

  Then, for example, a photosensitive resin is applied to the upper surfaces of the color filter unit 34 and the second insulating film 33 (over the entire upper surface of the wafer), and further exposed and developed, whereby the microlens unit 35. Form. Thereafter, the solid-state imaging device 1 is manufactured by dividing the wafer as necessary (see FIG. 1).

  According to the manufacturing method of the first example, it is possible to easily manufacture the solid-state imaging device 1 having a structure in which the light shielding portion 32 is provided between the adjacent color filter portions 34 as described above.

<Second example>
Next, a second example of the method for manufacturing the solid-state imaging device according to the embodiment of the present invention will be described with reference to FIGS. 8-12 is sectional drawing which shows the 2nd example of the manufacturing method of the solid-state image sensor concerning embodiment of this invention. 8 to 12 show the same cross section as the cross section shown in FIG.

  Similar to the first example of the method for manufacturing the solid-state imaging device according to the embodiment of the present invention described above, the second example also performs photoelectric conversion in the substrate 10 by first performing ion implantation or the like on the substrate 10. The part 11 and the pixel separation part 12 are formed. Then, the circuit unit 20 is formed on the lower surface 102 of the substrate 10, and the first insulating film 31 is formed on the upper surface 101 of the substrate 10 (see FIG. 3).

  Next, as shown in FIG. 8, a mask film 40 a made of, for example, silicon oxide is formed on the upper surface of the first insulating film 31 (over the entire upper surface of the wafer). Note that the film thickness of the mask film 40a may be the same as the film thickness of the light shielding portion 34 to be finally formed, and specifically may be, for example, 200 nm or more and 1000 nm or less.

  Next, as shown in FIG. 9, the portions of the mask film 40a that are directly above the respective photoelectric conversion portions 11 are left and other portions are selectively removed until the underlying first insulating film 31 is exposed. To do. Thereby, a grid-like mask portion 40 is formed. Note that, when the mask film 40a is selectively removed, etching using a technique such as photolithography may be performed.

  Next, as shown in FIG. 10, a light shielding film 32b made of a material that blocks light transmission is formed adjacent to the upper surface and side surfaces of the mask portion 40 (over the entire upper surface of the wafer). The gap of the mask part 40 is filled up.

  Next, as shown in FIG. 11, the upper surface of the light shielding film 32b (the entire upper surface of the wafer) is removed until the upper surface of the mask portion 40 is exposed. Thereafter, as shown in FIG. 12, the light shielding portion 32 is formed by removing the mask portion 40. In addition, when removing the upper surface of the light shielding film 32b, polishing such as CMP (Chemical Mechanical Polishing) may be used.

  The subsequent steps are the same as in the first example of the solid-state imaging device manufacturing method according to the above-described embodiment of the present invention. That is, the second insulating film 33, the color filter part 34, and the microlens part 35 are formed in order, and the solid-state imaging device 1 is manufactured by dividing the wafer as necessary (FIGS. 6, 7 and 7). (See FIG. 1).

  According to the manufacturing method of the second example, it is possible to easily manufacture the solid-state imaging device 1 having a structure in which the light shielding portion 32 is provided between the adjacent color filter portions 34 as described above.

<< Deformation, etc. >>
The solid-state imaging device 1 has been described as including both the first insulating film 31 and the second insulating film 33. However, if possible, one or both of the first insulating film 31 and the second insulating film 33 may not be included. Alternatively, if necessary, a layer other than the first insulating film 31 and the second insulating film 33 may be further provided.

  The backside illumination type CMOS image sensor is exemplified as the solid-state imaging device 1 according to the embodiment of the present invention. However, the present invention is applicable to the frontside illumination type and the backside illumination type CCD even if it is a front side illumination type CMOS image sensor. Even an image sensor or a solid-state imaging device other than a CMOS image sensor and a CCD image sensor can be applied.

  The solid-state imaging device according to the present invention can be suitably used for, for example, a CMOS image sensor or a CCD image sensor mounted on various electronic devices having an imaging function.

DESCRIPTION OF SYMBOLS 1: Solid-state image sensor 10: Board | substrate 101: Upper surface 102; Lower surface 11: Photoelectric conversion part 111: Charge storage part 12: Pixel separation part 20: Circuit part 21: Circuit member 31: 1st insulating film 32: Light-shielding part 32a, 32b : Light shielding film 33: second insulating film 34: color filter part 35: microlens part 40: mask part 40a: mask film

Claims (8)

A substrate provided with a plurality of photoelectric conversion parts for photoelectrically converting light incident from the upper surface;
A plurality of color filter portions that are provided immediately above each of the photoelectric conversion portions and transmit light of a predetermined wavelength;
A light blocking portion that blocks light transmission,
The solid-state imaging device, wherein the light shielding portion is provided between the adjacent color filter portions.   2. The solid-state imaging device according to claim 1, wherein the light shielding portion has a lattice shape in plan view, and the color filter portion is surrounded by the light shielding portion.   3. The solid-state imaging device according to claim 2, wherein the thickness of the grating of the light shielding portion in a plan view is 10 nm or more and 200 nm or less.   The film thickness of the said light-shielding part is 200 nm or more and 1000 nm or less, The solid-state image sensor of any one of Claims 1-3 characterized by the above-mentioned. A circuit unit for controlling electric charges generated by photoelectric conversion of the photoelectric conversion unit;
5. The solid-state imaging device according to claim 1, wherein the circuit unit is provided on a lower surface side of the substrate.   6. The solid-state imaging device according to claim 1, wherein the light shielding portion is made of at least one of aluminum, copper, tungsten, titanium, and titanium nitride. A light-shielding film forming step of forming a light-shielding film made of a material that blocks light transmission on a surface of a wafer including a substrate provided with a plurality of photoelectric conversion parts provided therein for photoelectrically converting light incident from the upper surface; ,
A light shielding part forming step of forming a light shielding part by selectively removing a portion of the light shielding film directly above each of the photoelectric conversion parts until a base is exposed;
And a color filter portion forming step of forming a plurality of color filter portions that transmit light of a predetermined wavelength adjacent to each other so that the light shielding portion is sandwiched therebetween. . A mask film forming step of forming a mask film on the surface on the upper surface side of a wafer provided with a substrate provided with a plurality of photoelectric conversion portions for photoelectrically converting light incident from the upper surface;
A mask part forming step for forming a mask part by selectively removing the other part of the mask film until the underlying surface is exposed, leaving a part directly above each photoelectric conversion part;
A light-shielding film forming step of forming a light-shielding film made of a material that blocks light transmission on the surface on the upper surface side of the wafer, and filling a gap between adjacent mask portions;
Removing the surface on the upper surface side of the wafer until the mask portion is exposed, and then removing the mask portion, thereby forming a light shielding portion;
And a color filter portion forming step of forming a plurality of color filter portions that transmit light of a predetermined wavelength adjacent to each other so that the light shielding portion is sandwiched therebetween. .

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