JP2013225575A - Lead frame for optical semiconductor device, optical semiconductor device, and method of manufacturing them - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a lead frame for an optical semiconductor device capable of constituting an optical semiconductor device in which constraints on manufacture are excluded, electrical connection reliability is improved, and reflectivity of light emitted from an optical semiconductor element in bottom direction is improved, and provide an optical semiconductor device using the lead frame, and a method of manufacturing them.SOLUTION: A lead frame for an optical semiconductor device includes an electrode part connected to an optical semiconductor element and a side wall part disposed on an outer periphery of a side surface of the optical semiconductor element. The electrode part is disposed on the optical semiconductor element. The light that is emitted from the optical semiconductor element in bottom direction is caused to be reflected upward by a member different from the lead frame for the optical semiconductor device.

Description

  The present invention relates to a lead frame for an optical semiconductor device connected to an optical semiconductor element such as an LED element, an optical semiconductor device, and a method for manufacturing the same.

  2. Description of the Related Art Conventionally, lighting devices that use LED (light emitting diode) elements as light sources are used in various home appliances, OA equipment, display lights for vehicle equipment, general lighting, in-vehicle lighting, displays, and the like. Some of such lighting devices include an optical semiconductor device having a lead frame having an electrode part insulated from each other and an LED element.

  For example, in Patent Document 1, as shown in FIG. 9, an LED element 510 is placed on an electrode portion 502 a of a lead frame 501 having electrode portions 502 a and 502 b insulated from each other. An optical semiconductor device 500 having a structure including an insulating resin 530 that functions as a reflector (side-surface-side reflecting portion) on the outer periphery and in which an LED element 510 is sealed with a translucent resin 540 is described. ing.

  Further, in the optical semiconductor device 500, the electrical connection with the LED element 510 is formed by forming a plating film 503 containing silver (Ag) on the surface of the lead frame 501 on which the LED element 510 is placed. The reflectance on the bottom side is increased with respect to the light emitted from the LED element 510, and the light emission efficiency of the optical semiconductor device 500 is improved.

  In the optical semiconductor device 500, the terminal portion on the bottom side of the LED element 510 and the electrode portion 502a of the lead frame 501 are electrically connected via the plating film 503 containing silver (Ag). On the other hand, the terminal portion on the top side of the LED element 510 is connected to the electrode portion 502a of the lead frame 501 through the bonding wire 520 extending from the terminal portion on the top side and the plating film 503 formed on the surface of the electrode portion 502b. Electrically connected.

JP 2011-151069 A

Here, since a conventional lead frame for a semiconductor element (IC or the like) is required to have conductivity as an electrode, it is generally made of copper (Cu) or the like. In order to increase the thickness, a plating film such as gold (Au) or silver (Ag) was formed on the surface.
However, in the lead frame for an optical semiconductor device, as described above, when an optical semiconductor element such as an LED element is mounted on the lead frame, the lead frame is an electrode electrically connected to the optical semiconductor element. In addition to this function, it also functions as a reflector that increases the reflectance of light emitted from the optical semiconductor element in the bottom direction.
Therefore, the above silver plating film must satisfy the conditions for increasing the reflectivity, and there are more manufacturing restrictions than the case of forming a silver plating film for electrical connection with an optical semiconductor element. As a result, there has been a problem that the manufacturing cost increases. Specifically, when the electrical connection reliability is increased, a desired reflectance cannot be obtained, and conversely, when the reflectance is increased, the desired connection reliability cannot be obtained.

  The present invention has been made in view of the above circumstances, and eliminates the above-described manufacturing restrictions, improves the electrical connection reliability, and reflects light emitted from the optical semiconductor element in the bottom direction. An object of the present invention is to provide an optical semiconductor device lead frame capable of constituting an optical semiconductor device capable of increasing the rate, an optical semiconductor device using the same, and a method of manufacturing the same.

  As a result of various researches, the present inventor has constituted an optical semiconductor device lead frame by an electrode portion connected to the optical semiconductor element and a side wall portion disposed on the outer periphery of the side surface of the optical semiconductor element. The part is arranged on the optical semiconductor element, and the light emitted from the optical semiconductor element in the bottom direction is reflected to the upper side (the top side) by a member different from the lead frame for an optical semiconductor device, The present invention has been completed by finding that the above problems can be solved.

  That is, the invention according to claim 1 of the present invention is for an optical semiconductor device for constituting an optical semiconductor device having an optical semiconductor element on a bottom-side reflecting plate that reflects at least part of light emitted from the optical semiconductor element. A lead frame, wherein the lead frame for an optical semiconductor device has an electrode part and a side wall part, and the electrode part is located on the optical semiconductor element in a form constituting the optical semiconductor device; and There is a surface on which the optical semiconductor element is mounted on the side facing the bottom reflector, and the side wall portion is disposed so as to surround the optical semiconductor element in a plan view in the form of the optical semiconductor device. The optical semiconductor device is characterized in that a surface of the side wall portion on the side of the bottom reflector is located closer to the bottom reflector than a surface of the electrode portion on which the optical semiconductor element is mounted. For lead frame

  In the invention according to claim 2 of the present invention, the bottom reflector on the side surface when the side surface of the lead frame for an optical semiconductor device is viewed in plan on the side surface on the side surrounding the optical semiconductor element. 2. The lead frame for an optical semiconductor device according to claim 1, wherein an end portion on a side is positioned so as to be positioned closer to the optical semiconductor element side than an end portion on the opposite side to the bottom reflector. is there.

  The invention according to claim 3 of the present invention is characterized in that the electrode part and the side wall part are made of the same metal material, and the electrode part and the side wall part are isolated from each other. A lead frame for an optical semiconductor device according to claim 2.

  The invention according to claim 4 of the present invention is characterized in that a plating film containing silver is formed on the electrode part and the side wall part. It is a lead frame for optical semiconductor devices as described.

  According to a fifth aspect of the present invention, a plurality of lead frames for an optical semiconductor device according to any one of the first to fourth aspects are multifaceted in a planar shape via a connecting portion. A lead frame for an optical semiconductor device.

  According to a sixth aspect of the present invention, an optical semiconductor device lead frame according to any one of the first to fourth aspects, an optical semiconductor element, and the optical semiconductor element are sealed. An optical semiconductor device comprising: a translucent resin that transmits at least part of light emitted from an optical semiconductor element; and the bottom reflector.

  The invention according to claim 7 of the present invention is characterized in that the terminal portion of the optical semiconductor element is bonded to the surface of the electrode portion on which the optical semiconductor element is mounted. It is an optical semiconductor device of description.

  The invention according to claim 8 of the present invention is the optical semiconductor device according to claim 6 or 7, characterized in that the optical semiconductor element and the bottom reflector are joined.

  The invention according to claim 9 of the present invention is characterized in that the side wall portion is joined to the bottom reflecting plate at a surface on the bottom reflecting plate side. An optical semiconductor device according to any one of the above.

  According to a tenth aspect of the present invention, there is provided an optical semiconductor device for forming an optical semiconductor device having an optical semiconductor element on a bottom reflector that reflects at least part of light emitted from the optical semiconductor element. A lead frame having an electrode part and a side wall part, wherein the electrode part is located on the optical semiconductor element in the form of the optical semiconductor device and faces the bottom reflecting plate The optical semiconductor element is mounted on the side wall, and the side wall portion is disposed so as to surround the optical semiconductor element in a plan view in the form of the optical semiconductor device. The surface on the bottom reflecting plate side is a method for manufacturing a lead frame for an optical semiconductor device located on the bottom reflecting plate side with respect to the surface on which the optical semiconductor element of the electrode portion is mounted, and a metal substrate is prepared And a step of the metal substrate A region on the main surface of the electrode portion opposite to the surface on which the optical semiconductor element is mounted, and a region on the side wall portion opposite to the bottom reflector side. A step of forming a first resist pattern to be coated; and a second surface of the metal substrate on a surface opposite to the one main surface to cover a region to be a surface on the bottom reflector side of the side wall portion. Forming the resist pattern, and half-etching each surface of the metal substrate exposed from the first resist pattern and the second resist pattern so that the electrode portion and the side wall portion are the same step. And an etching process formed by the method of manufacturing a lead frame for an optical semiconductor device.

  According to an eleventh aspect of the present invention, a plating film containing silver is formed on the electrode portion and the side wall portion following the process of the method for manufacturing a lead frame for an optical semiconductor device according to the tenth aspect. A method of manufacturing a lead frame for an optical semiconductor device.

  According to a twelfth aspect of the present invention, there is provided an optical semiconductor device for forming an optical semiconductor device having an optical semiconductor element on a bottom reflector that reflects at least part of light emitted from the optical semiconductor element. A lead frame having an electrode part and a side wall part, wherein the electrode part is located on the optical semiconductor element in the form of the optical semiconductor device and faces the bottom reflecting plate The optical semiconductor element is mounted on the side wall, and the side wall portion is disposed so as to surround the optical semiconductor element in a plan view in the form of the optical semiconductor device. The surface on the bottom-side reflecting plate side is a lead frame for an optical semiconductor device located on the bottom-side reflecting plate side relative to the surface on which the optical semiconductor element of the electrode portion is mounted, the optical semiconductor element, and the optical semiconductor element Sealing the optical semiconductor element A method of manufacturing an optical semiconductor device comprising a translucent resin that transmits at least a part of the light emitted from the bottom reflector, and a surface of the electrode portion on which the optical semiconductor element is mounted. Bonding the terminal part of the optical semiconductor element, bonding the bottom reflector to either the optical semiconductor element or the side wall part, or both, and the light by the translucent resin. A method of manufacturing an optical semiconductor device, comprising: sealing a semiconductor element.

  According to the present invention, the electrode portion of the lead frame for an optical semiconductor device is disposed on the optical semiconductor element, and the function as a reflector for increasing the reflectance of light emitted from the optical semiconductor element in the bottom direction is the bottom side. Since the reflecting plate bears, the silver plating film formed on the surface of the lead frame for optical semiconductor devices mainly needs to satisfy the conditions for electrical connection with the optical semiconductor element. Compared to the case where it is necessary to satisfy the conditions for increasing the rate, the manufacturing restrictions are reduced, and thus the manufacturing cost can be kept low.

It is explanatory drawing of an example of the lead frame for optical semiconductor devices which concerns on this invention, (a) is a top view, (b) is a bottom view, (c) is AA sectional drawing of (a). It is explanatory drawing which shows the example of the form with which the lead frame for optical semiconductor devices based on this invention shown in FIG. 1 was attached in many faces, (a) is a top view, (b) is BB sectional drawing of (a). is there. It is explanatory drawing of an example of the optical semiconductor device which concerns on this invention, (a) is a top view, (b) is CC sectional drawing of (a). It is explanatory drawing of the bottom side reflecting plate which concerns on this invention. It is a typical process figure showing an example of a manufacturing method of a lead frame for optical semiconductor devices concerning the present invention. FIG. 6 is an explanatory diagram showing a relationship of a first resist pattern in an example of a method for manufacturing a lead frame for an optical semiconductor device according to the present invention shown in FIG. 5. It is explanatory drawing which shows the relationship of the 2nd resist pattern in an example of the manufacturing method of the lead frame for optical semiconductor devices which concerns on this invention shown in FIG. It is a typical process figure showing an example of a manufacturing method of an optical semiconductor device concerning the present invention. It is explanatory drawing which shows an example of the conventional optical semiconductor device.

  Hereinafter, the lead frame for an optical semiconductor device of the present invention, the optical semiconductor device using the lead frame, and the manufacturing method thereof will be described in detail.

[Lead frame for optical semiconductor devices]
First, the lead frame for optical semiconductor devices according to the present invention will be described.
1A and 1B are explanatory views of an example of a lead frame for an optical semiconductor device according to the present invention. FIG. 1A is a plan view, FIG. 1B is a bottom view, and FIG. is there.
FIG. 2 is an explanatory view showing an example of an embodiment in which the lead frame for an optical semiconductor device according to the present invention shown in FIG. 1 is multifaceted, (a) is a plan view, and (b) is a plan view of (a). It is BB sectional drawing.
3A and 3B are explanatory views of an example of an optical semiconductor device using the optical semiconductor device lead frame according to the present invention, in which FIG. 3A is a plan view and FIG. 3B is a cross-sectional view taken along the line CC in FIG. It is.

  The lead frame for an optical semiconductor device according to the present invention includes a package unit form (first form) as shown in FIG. 1 and an optical semiconductor device lead frame as shown in FIG. It includes two forms of a form (second form) that is multifaceted on a plane via a connecting portion.

(First form)
First, the lead frame for optical semiconductor devices of the present invention in package units will be described.
Here, the lead frame for an optical semiconductor device in units of packages is a lead frame for optical semiconductor devices that constitutes a unit of semiconductor device. As the configuration, the lead frame for optical semiconductor devices is electrically connected to at least one optical semiconductor element. It has a pair of electrode parts to be connected.

  An optical semiconductor device lead frame according to the present invention is an optical semiconductor device lead for constituting an optical semiconductor device having an optical semiconductor element on a bottom-side reflector that reflects at least part of light emitted from the optical semiconductor element. A frame having an electrode portion and a side wall portion, wherein the electrode portion is positioned on the optical semiconductor element in a form constituting the optical semiconductor device and on a side facing the bottom reflector. A surface on which the optical semiconductor element is mounted, and the side wall portion is disposed so as to surround the optical semiconductor element in a plan view in the form of the optical semiconductor device, and the bottom of the side wall portion The surface on the side reflecting plate side is located on the bottom reflecting plate side with respect to the surface on which the optical semiconductor element of the electrode portion is mounted.

  For example, as shown in FIG. 1, an optical semiconductor device lead frame 1 according to the present invention includes electrode portions 2a and 2b and side wall portions 3a and 3b. As shown in FIG. Has a surface on which the optical semiconductor element 210 is mounted on the side facing the bottom-side reflector 230 in the form constituting the optical semiconductor device 200, and the side wall portion. 3a and 3b are arranged so as to surround the optical semiconductor element 210 in a plan view in the configuration of the optical semiconductor device 200, and the side of the side reflectors 230 side of the side wall portions 3a and 3b is The electrodes 2a and 2b are located closer to the bottom reflector 230 than the surface on which the optical semiconductor element 210 is mounted.

  Since it has such a configuration, in the lead frame for an optical semiconductor device according to the present invention, the electrode portion is disposed on the top side of the optical semiconductor element, and serves as a bottom reflector on which the optical semiconductor element is placed. Since the function is performed by the bottom reflector, the silver plating film formed on the surface of the lead frame for an optical semiconductor device mainly satisfies the conditions for electrical connection with the optical semiconductor element. Compared to the case where the silver plating film also needs to satisfy the conditions for increasing the reflectance, the manufacturing restrictions are reduced, and therefore the manufacturing cost can be kept low.

  Here, the “top side” in this specification refers to the direction of the main surface from which the light from the optical semiconductor element is emitted in the optical semiconductor device, and is the Z direction in FIG. Further, the “bottom side” refers to the direction opposite to the “top side”.

Further, in the lead frame for an optical semiconductor device according to the present invention, the side surface of the side surface surrounding the optical semiconductor element is the bottom side of the side surface when the optical semiconductor device lead frame is viewed in plan view. It is preferable that the end portion on the reflecting plate side has a shape that is positioned closer to the optical semiconductor element side than the end portion on the opposite side to the bottom reflecting plate.
If it has such a structure, the said side wall part is the horizontal direction discharge | released from an optical semiconductor element other than the function as a wall which fastens the translucent resin which seals an optical semiconductor element to a predetermined area | region. This is because the function as a side reflector that efficiently reflects light in the (side surface direction) toward the top side can also be exhibited.

  For example, as shown in FIG. 3, the side walls 3a and 3b of the lead frame 1 for an optical semiconductor device according to the present invention are, for example, on the side surface surrounding the optical semiconductor element 210 in the CC cross section. The end of the side surface on the bottom reflector 230 side is located closer to the optical semiconductor element 210 than the end on the opposite side (top side) of the bottom reflector 230.

In the lead frame for an optical semiconductor device according to the present invention, it is preferable that the electrode part and the side wall part are made of the same metal material, and the electrode part and the side wall part are isolated from each other. For example, as shown in FIG. 1, the electrode portions 2a and 2b and the side wall portions 3a and 3b are separated from each other via a gap.
If it has such composition, since electrode parts 2a and 2b and side wall parts 3a and 3b can be formed from the same metal material, it is efficient in manufacture, and electrode parts 2a and 2b This is because a short circuit is not caused when an optical semiconductor element is connected.

  Examples of the metal material include copper, a copper alloy, 42 alloy (Ni 40.5% to 43% Fe alloy), aluminum, and the like. Moreover, the thickness of a metal material can be 0.05 mm-0.5 mm, for example.

In the lead frame for an optical semiconductor device according to the present invention, it is preferable that a plating film containing silver is formed on the electrode part and the side wall part.
If it has such a structure, when using copper or a copper alloy as a material of the said electrode part, for example, an electrical connection with an optical semiconductor element can be performed favorably, and it depends on the said side wall part. This is because the reflectivity of light emitted from the optical semiconductor element to the side can be further enhanced.

  For example, as shown in FIG. 1C, a plating film 4 containing silver is formed on the surface of the electrode portion 2a and the surfaces of the side wall portions 3a and 3b of the lead frame 1 for an optical semiconductor device according to the present invention. Has been.

  Here, as in the prior art, the lead frame for an optical semiconductor device increases the reflectance of light emitted from the optical semiconductor element in the bottom direction in addition to the function as an electrode electrically connected to the optical semiconductor element. When also functioning as a reflector, the plating film containing silver described above must satisfy the conditions for increasing the reflectance.

  Therefore, for example, due to the restriction that less power can be used than when forming a plating film for electrical connection with an optical semiconductor element, it takes time to form the plating film, and the thickness of the plating film to be formed is also limited. It was limited to a thin one (for example, about 0.5 μm), and it was difficult to improve connection reliability.

  However, in the present invention, the plating film formed on the surface of the lead frame mainly needs to satisfy the conditions for electrical connection with the optical semiconductor element. For example, using a larger power, The plating film can be formed at high speed, and the thickness of the plating film to be formed can be set to a thickness (for example, about 3 μm) suitable for electrical connection with the optical semiconductor element.

In addition, in FIG.1 (c), although the state in which the plating film 4 containing silver is formed in the surface of the electrode part 2a is illustrated, in this invention, similarly to the electrode part 2a, an electrode part A plating film 4 containing silver is also formed on the surface 2b.
Moreover, in FIG. 1, in order to avoid becoming complicated, description of the plating film 4 containing silver is abbreviate | omitted in FIG. 1 (a) and (b).

(Second form)
Next, an optical semiconductor device lead frame according to a second embodiment of the present invention will be described.
The lead frame for an optical semiconductor device according to the second aspect of the present invention has a form in which a plurality of lead frames for an optical semiconductor device according to the first aspect described above are planarly attached via a connecting portion. It is characterized by that.

  For example, as shown in FIG. 2, the lead frame 100 for an optical semiconductor device according to the present embodiment has an outer frame portion 121 on the outer peripheral portion, and the above-described first frame is formed in a region surrounded by the outer frame portion 121. A plurality of lead frames 1 for an optical semiconductor device according to the first embodiment are multifaceted in a planar shape via connecting portions 111a, 111b, 112, 113a, 113b, 114.

  The above-described connecting portion will be described in more detail. The optical semiconductor device lead frame 1 according to the first form of the package unit is the outer frame portion 121 via the connecting portions 111a and 111b in the X direction in FIG. 2 is connected to the outer frame portion 121 via the connecting portion 112 in the Y direction in FIG. 2A, and via the connecting portions 113a and 113b in the X direction in FIG. 2A. It is connected to another adjacent lead frame 1 for optical semiconductor devices, and is connected to another adjacent lead frame 1 for optical semiconductor devices via a connecting portion 114 in the Y direction in FIG.

  2 is an example of the lead frame for an optical semiconductor device according to the present embodiment, and the shape and the number of each connecting portion described above are not limited to the shape and the number shown in FIG. 2, and various shapes and numbers can be used. You can choose. Further, the thickness of each of the connecting portions described above is not limited to the thickness shown in FIG. 2B, and may be a thickness different from that of the side wall portions 3 a and 3 b and the outer frame portion 121.

  Further, in order to make it easy to grasp the location of the connecting portion, in FIG. 2, the connecting portions are indicated by diagonal lines, but the material constituting each connecting portion is the first form of a package unit. The material constituting the lead frame 1 for optical semiconductor devices and the material constituting the outer frame portion 121 are usually the same. In the present invention, the material constituting the connecting portion is not particularly limited, and may be different from the material constituting the optical semiconductor device lead frame 1.

Since the optical semiconductor device lead frame 100 according to this embodiment has the above-described configuration, a plurality of first frames are manufactured by manufacturing the optical semiconductor device lead frame 100 according to the second embodiment. The lead frame 1 for an optical semiconductor device can be obtained collectively.
That is, the manufacturing cost can be greatly reduced as compared with the case where the lead frame 1 for optical semiconductor devices of the first embodiment is individually manufactured.

  In general, when an optical semiconductor device is manufactured, an optical semiconductor element is mounted on each optical semiconductor device lead frame 1 in a multi-faceted configuration like the optical semiconductor device lead frame 100, and the light-transmitting property is obtained. After the optical semiconductor element is sealed with resin, it is separated into individual optical semiconductor devices by a dicing process or the like.

[Optical semiconductor device]
Next, an optical semiconductor device according to the present invention will be described.
An optical semiconductor device according to the present invention includes the above-described lead frame for an optical semiconductor device, an optical semiconductor element, and a translucent resin that seals the optical semiconductor element and transmits at least part of light emitted from the optical semiconductor element. And the bottom reflector.
For example, as shown in FIG. 3, an optical semiconductor device 200 according to the present invention includes the above-described lead frame 1 for an optical semiconductor device, an optical semiconductor element 210, and the optical semiconductor element. A translucent resin 240 that transmits at least part of the emitted light and a bottom-side reflecting plate 230 that reflects at least part of the light emitted by the optical semiconductor element are provided.

Next, the optical semiconductor element 210, the translucent resin 240, and the bottom-side reflecting plate 230 constituting the optical semiconductor device 200 according to the present invention will be described.
Since the optical semiconductor device lead frame 1 has already been described in detail, description thereof is omitted here.

(Optical semiconductor device)
As the optical semiconductor element 210, for example, a conventionally used LED element can be used. Here, in the LED element, for example, by appropriately selecting a material made of a compound semiconductor single crystal such as GaP, GaAs, GaAlAs, GaAsP, and AlInGaP or various GaN-based compound semiconductor single crystals such as InGaN as the light emitting layer, An emission wavelength ranging from ultraviolet light to infrared light can be selected.

(Translucent resin)
As the translucent resin 240, it is desirable to select a material having a high light transmittance and a high refractive index at the emission wavelength of the optical semiconductor element in order to improve the light extraction efficiency.
For example, it is possible to select an epoxy resin or a silicone resin as a resin that satisfies the characteristics of high heat resistance, weather resistance, and mechanical strength, but particularly when a high-brightness LED is used as an optical semiconductor element. The translucent resin is preferably made of a silicone resin having high light resistance because it is exposed to strong light.

(Bottom reflector)
Next, the bottom reflection plate 230 will be described.
In the present invention, the lead frame 1 for an optical semiconductor device and the bottom-side reflecting plate 230 can be formed as separate and independent members, and the conventional lead frame for an optical semiconductor device also serves as the bottom-side reflecting plate. Compared to the structure, the shape and material of the bottom reflector can be selected more freely. Therefore, the bottom reflector is not required to have electrical connection performance with the optical semiconductor element, and the bottom reflector increases the reflectance of light emitted from the optical semiconductor element, and is resistant to corrosion. It is possible to make the configuration specialized in enhancing the quality.

For example, as the material of the bottom reflector, a material having a higher light reflectance than the silver plating film formed on the surface of the electrode part of the lead frame for an optical semiconductor device that also serves as the conventional bottom reflector Can be used.
Further, the configuration of the bottom-side reflecting plate may be a configuration in which a material having a high light reflectance is laminated on the light reflecting surface side.
In addition, when a silver plating film is formed on the bottom reflector, the reflectance is higher than the formation conditions used for the conventional lead frame for optical semiconductor devices, in which not only the reflectance but also connection reliability is required. It is possible to use formation conditions suitable for increasing the thickness.

Further, in the present invention, the form of the bottom reflector can be made simpler than the form of the lead frame for an optical semiconductor device that also serves as the conventional bottom reflector. As a result, the manufacture of the bottom reflector and the optical semiconductor device can be facilitated, and the effects of shortening the manufacturing time and reducing the manufacturing cost can also be achieved.
In addition, it is possible to use a material that is cheaper than a conventional lead frame for an optical semiconductor device as the material that constitutes the bottom-side reflecting plate, which can also produce an effect of reducing the manufacturing cost.

FIG. 4 is an explanatory view of a bottom-side reflecting plate constituting the optical semiconductor device according to the present invention.
In the present invention, as a material constituting the light reflecting surface of the bottom-side reflecting plate 230, a metal having a high light reflectivity, for example, silver (Ag), aluminum (Al), or platinum (Pt) is used. The containing metal etc. can be used conveniently. This is because the reflectance of light emitted in the bottom direction from the optical semiconductor element can be increased by forming the light reflecting surface of the bottom-side reflecting plate 230 with such a metal having high light reflectance.

The form of the bottom reflection plate 230 is not particularly limited as long as it can reflect light emitted from the optical semiconductor element in the bottom direction. For example, a flat plate form is preferable.
For example, as shown in FIG. 4A, by making the bottom-side reflecting plate 230 a flat metal plate 231, it is possible to make the bottom-side reflecting plate and the optical semiconductor device easier to manufacture, and to reduce the manufacturing time. The effects of shortening the manufacturing cost and reducing the manufacturing cost can be achieved.
The thickness of the flat metal plate 231 is not particularly limited as long as it can maintain the strength as the casing of the optical semiconductor device 200, and may be 0.05 mm to 0.5 mm, for example.
In the present invention, a flat metal plate containing a metal having a high light reflectance as described above may be mirror-polished, and the mirror-polished surface may be used as the light reflecting surface of the bottom-side reflecting plate 230.

Also, in the present invention, as shown in FIG. 4B, the bottom reflector is the top side of the flat metal plate 231 (in the form constituting the optical semiconductor device 200, the electrode portions 2a and 2b). You may have the structure which laminated | stacked metal foil 232 on the surface of the (opposite side).
Here, the metal foil 232 includes a metal having a high light reflectance as described above, and the top surface of the metal foil 232 becomes the light reflecting surface of the bottom reflecting plate 230.
Although not shown, an adhesive layer or the like may be provided between the flat metal plate 231 and the metal foil 232.

With such a configuration, since the top surface (light reflecting surface) of the metal foil 232 only needs to have a high reflectance, the underlying metal plate 231 may have a low reflectance. . That is, the material of the underlying metal plate 231 can be selected more freely.
For example, a cheaper material can be used as the material of the base metal plate 231, or a material excellent in other characteristics such as thermal conductivity can be used.

  Examples of the metal foil 232 include a silver (Ag) foil, an aluminum (Al) foil, and a platinum (Pt) foil. The thickness of the metal foil 232 is, for example, about 5 μm to 20 μm. Can do.

  The bottom-side reflecting plate 230 having the laminated structure as described above is formed on, for example, a sheet on the top side of the flat metal plate 231 (on the side facing the electrode portions 2a and 2b in the form constituting the optical semiconductor device 200). It can be obtained by laminating a metal foil 232 in a shape.

  Moreover, the bottom-side reflecting plate 230 according to the present invention is provided on the surface on the top side (the side facing the electrode portions 2a and 2b in the form of the optical semiconductor device 200), for example, as shown in FIG. A structure having a plating film 233 containing silver (Ag) may be used. In this case, the top surface of the plating film 233 becomes the light reflecting surface of the bottom reflecting plate 230.

  With such a configuration, the top surface (light reflecting surface) of the plating film 233 only needs to have a high reflectance, so that the material of the base metal plate 231 can be made more freely as described above. Can be selected.

The bottom reflecting plate 230 having the plating film 233 containing silver as described above is formed on the top surface of the metal plate 231 (on the side facing the electrode portions 2a and 2b in the form constituting the optical semiconductor device 200), for example. It can be obtained by performing electroplating using a silver plating solution containing silver cyanide as a main component.
In addition, before forming the plating film 233, for example, an electrolytic degreasing process, a pickling process, and a copper strike process may be appropriately selected, and then the plating film 233 may be formed through an electrolytic plating process.

Here, in the present invention, the lead frame 1 for an optical semiconductor device and the bottom-side reflecting plate 230 can be formed as separate and independent members. Therefore, the plating film 233 is formed of an optical semiconductor as in the prior art. Compared with the case where the apparatus lead frame also serves as the bottom reflector, the reflectance can be more emphasized.
In other words, since the bottom reflector according to the present invention is not required to be electrically connected to the optical semiconductor element, the plating film 233 can be formed under the formation conditions suitable for the purpose of increasing the reflectance.

Further, since the bottom reflector 230 according to the present invention is not exposed to various processes such as etching unlike the conventional lead frame for an optical semiconductor device, when forming the plating film as described above, A plating film can be formed on a cleaner surface.
Therefore, for example, even when a metal material (for example, copper) that has been used as a material for a conventional lead frame for an optical semiconductor device is used for the bottom reflector 230, a higher quality plating film is formed. Can do.

  The bottom reflector 230 according to the present invention may have a gas barrier layer 234 on the light reflecting surface. This is because the light reflecting surface can be prevented from coming into contact with corrosive gas such as oxygen or hydrogen sulfide gas in the air, and the reflectance of the light reflecting surface can be suppressed from decreasing.

Here, when the gas barrier property of the translucent resin is not sufficient, corrosive gas such as oxygen or hydrogen sulfide gas in the air penetrates into the optical semiconductor device through the translucent resin, and enters the light reflecting surface. There is a problem of reaching.
In the case where both the electrical connection reliability and the reflectance are required for the silver plating film of the lead frame for optical semiconductor devices as in the prior art, it is difficult to improve the corrosion resistance of the silver plating film. Therefore, there is a problem that the reflectance of the silver plating film decreases with the passage of time.

Therefore, the bottom reflector according to the present invention may also have a gas barrier layer on the light reflecting surface in order to suppress the decrease in reflectance due to corrosion as described above.
For example, in the example shown in FIG. 4D, a plating film 233 containing silver is formed on the surface of the metal plate 231 on the top side (the side facing the electrode portions 2a and 2b in the configuration of the optical semiconductor device 200). The gas barrier layer 234 is formed thereon.

  Here, as described above, since the bottom reflector 230 according to the present invention is not required to be electrically connected to the optical semiconductor element 210, an insulating material may be used as the material of the gas barrier layer 234. it can. For example, in the present invention, the gas barrier layer 234 can include an epoxy resin.

  For example, the bottom reflecting plate 230 having the configuration as shown in FIG. 4D is obtained by installing a metal plate 231 on which a plating film 233 is formed in a mold and injection-molding an epoxy resin. be able to.

  Since the above-described constituent elements, that is, the optical semiconductor element 210, the translucent resin 240, the bottom-side reflecting plate 230, and the optical semiconductor device lead frame 1 described above are provided, the light according to the present invention is provided. In addition to the effect of the above-described lead frame for an optical semiconductor device, the semiconductor device has an effect of efficiently radiating light from the optical semiconductor element while protecting the optical semiconductor element from the external environment.

  Moreover, in the optical semiconductor device according to the present invention, the terminal portion of the optical semiconductor element is bonded to the surface of the electrode portion of the lead frame for the optical semiconductor device on which the optical semiconductor element is mounted. preferable.

  For example, the optical semiconductor element 210 shown in FIG. 3 has two projecting terminal portions 220 on the top surface, and although not shown, one of the two terminal portions 220 is shown in FIG. 3A is in a position overlapping with the electrode portion 2a of the lead frame 1 for an optical semiconductor device shown in FIG. 3A in plan view. Similarly, the other of the two terminal portions 220 is the optical semiconductor shown in FIG. The electrode 2b of the device lead frame 1 is in a position overlapping in plan view.

As shown in FIG. 3B, one end of the terminal portion 220 is joined to the surface on which the optical semiconductor element is mounted of the electrode portion 2a of the lead frame 1 for an optical semiconductor device, not shown. However, the other end of the terminal portion 220 is joined to the surface of the electrode portion 2b of the lead frame 1 for optical semiconductor devices where the optical semiconductor element is mounted.
That is, in the optical semiconductor device 200 according to the present invention, the optical semiconductor element 210 is flip-chip connected to the electrode portions 2a and 2b of the optical semiconductor device lead frame 1.

The protruding terminal portion 220 can be used without particular limitation as long as it can be joined to the electrode portions 2a and 2b of the lead frame 1 for optical semiconductor devices.
For example, as the projecting terminal portion 220, a gold bump formed on a gold pad provided on the top surface of the optical semiconductor element 210 can be used.
The protruding terminal portion 220 having a gold bump as described above is formed by, for example, discharging and melting the tip of a gold wire to form a ball, which is provided on the top surface of the optical semiconductor element 210. It can be formed by joining with an ultrasonic wave and then cutting the gold wire.

  By having such a configuration, the optical semiconductor device 200 according to the present invention has a simpler configuration than the case where the optical semiconductor element and the lead frame for the optical semiconductor device are wire-bonded in addition to the above-described effects. It can be.

In addition, although the electrode parts 2a and 2b of the optical semiconductor device 200 are each electrically connected to an external circuit, in connection with the above-described external circuit, they may be connected on each side of the electrode parts 2a and 2b. preferable.
When the electrodes 2a and 2b are connected on the top surface, a part of the top side of the optical semiconductor device 200 may be covered by the wiring of the external circuit, and the light emission efficiency may be reduced. This is to prevent it.

  In the optical semiconductor device according to the present invention, it is preferable that the optical semiconductor element and the bottom reflector are bonded. This is because the heat accumulated in the optical semiconductor element can be conducted to the bottom reflector and released to the outside.

For example, in the optical semiconductor element 210 shown in FIG. 3, the bottom-side surface of the optical semiconductor element 210 and the bottom-side reflecting plate 230 are joined.
The bonding method of the optical semiconductor element 210 and the bottom reflector 230 is not particularly limited as long as the heat accumulated in the optical semiconductor element 210 can be conducted to the bottom reflector 230 and released to the outside. It can be used without being used. For example, it can join using solder and a heat dissipation adhesive.

  Moreover, in the optical semiconductor device according to the present invention, it is preferable that the side wall portion is joined to the bottom reflecting plate at a surface on the bottom reflecting plate side.

For example, as shown in FIG. 3B, in the optical semiconductor device 200 according to the present invention, the bottom reflector 230 is formed on the bottom surfaces of the side walls 3a and 3b of the lead frame 1 for optical semiconductor devices. It is joined.
With such a configuration, when the translucent resin 240 is filled, it is possible to prevent the translucent resin 240 from leaking from the gap between the bottom surface of the side walls 3a and 3b and the bottom reflector 230. .

Here, for example, various adhesives can be used for the method of joining the side wall portions 3a and 3b of the lead frame 1 for an optical semiconductor device and the bottom reflector 230. Among them, solder or heat-dissipating adhesive is used. The method of using and joining is preferable.
With such a configuration, the heat of the optical semiconductor element 210 conducted to the bottom reflector 230 can be further conducted to the side wall portions 3a and 3b of the lead frame 1 for an optical semiconductor device to be released to the outside. This is because the optical semiconductor device can be further excellent in heat dissipation.

[Method for manufacturing lead frame for optical semiconductor device]
Next, a method for manufacturing a lead frame for optical semiconductor devices according to the present invention will be described.

  In general, the lead frame for an optical semiconductor device is manufactured in a multi-faced form as described in the second embodiment of the lead frame for an optical semiconductor device according to the present invention described above. When manufacturing an optical semiconductor device, each of the optical semiconductor device lead frames in the multi-faceted configuration is provided with an optical semiconductor element, and is diced after each step such as sealing with resin. Separated into optical semiconductor devices.

However, the feature of the method for manufacturing the lead frame for optical semiconductor devices according to the present invention is that each optical semiconductor device described in the first embodiment is independent of the connecting portions and the outer frame portions in the second embodiment. This can be explained by a method of manufacturing the lead frame 1 for use. Therefore, in order to avoid complication, here, a method of manufacturing the optical semiconductor device lead frame 1 described in the first embodiment will be described.
The method for forming each connecting portion and outer frame portion in the second embodiment of the lead frame for optical semiconductor devices according to the present invention is not particularly limited, and a conventional method can be used.

FIG. 5 is a schematic process diagram showing an example of a method for manufacturing an optical semiconductor device lead frame according to the present invention.
FIG. 6 is an explanatory view showing the relationship of the first resist pattern in the example of the method for manufacturing the lead frame for an optical semiconductor device according to the present invention shown in FIG. 5, and FIG. 5 (c) and FIG. ), FIG. 5 (d) and FIG. 6 (b), and FIG. 5 (e) and FIG. 6 (c) respectively correspond to a sectional view and a plan view of the same process step.
FIG. 7 is an explanatory diagram showing the relationship of the second resist pattern in the example of the method for manufacturing the lead frame for an optical semiconductor device according to the present invention shown in FIG. 5, and FIG. 5 (c) and FIG. 5 (d) and FIG. 7 (b), FIG. 5 (e) and FIG. 7 (c) correspond to a cross-sectional view and a bottom view of the same process step, respectively.

  In order to manufacture a lead frame for an optical semiconductor device by the manufacturing method of the present invention, first, a flat metal substrate 301 is prepared as shown in FIG. As the metal substrate 301, a metal substrate made of copper, copper alloy, 42 alloy (Ni 40.5% to 43% Fe alloy) or the like can be used as described above. In addition, it is preferable to use what the metal substrate 301 performed the degreasing | defatting etc. on both surfaces, and performed the washing process.

  Next, as shown in FIG. 5B, a first resist layer 302 and a second resist layer 303 are formed on the front and back surfaces of the metal substrate 301, respectively. As materials and formation methods of the first resist layer 302 and the second resist layer 303, those known as etching resists can be used.

  Next, the first resist layer 302 and the second resist layer 303 are exposed and developed by a photolithography technique or the like to form first resist patterns 302a, 302b, 302c, and 302d on the surface of the metal substrate 301. (FIGS. 5C and 6A), second resist patterns 303a and 303b are formed on the back surface of the metal substrate 301 (FIGS. 5C and 7A).

  Here, as shown in FIGS. 6A to 6C, the first resist patterns 302a and 302b are respectively formed on the top sides of the electrode portions 2a and 2b formed in the subsequent etching process (the optical semiconductor). It covers a region which is a surface opposite to the surface on which the element is mounted. Further, the first resist patterns 302c and 302d respectively cover regions that become surfaces on the top side (opposite side to the bottom reflector side) of the side wall portions 3a and 3b formed in the subsequent etching process. To do.

  Further, as shown in FIGS. 7A to 7C, the second resist patterns 303a and 303b are respectively formed on the bottom side of the side wall portions 3a and 3b formed in the subsequent etching process (the bottom side reflection). The area to be the surface of the (plate side) is covered.

  When manufacturing the multi-faced form as described in the second form of the lead frame for an optical semiconductor device according to the present invention, for example, the top side surfaces of the connecting part and the outer frame part, respectively. The bottom surface and the bottom surface may be covered with a resist pattern. This is because the connecting portion and the outer frame portion can be formed by a subsequent etching step.

  Next, the first resist patterns 302a, 302b, 302c, and 302d, and the front and back surfaces of the metal substrate 301 exposed from the second resist patterns 303a and 303b are half-etched to form the electrode portions 2a and 2b and the side wall portions 3a and 3b are formed in the same process (FIG. 5D, FIG. 6B, and FIG. 7B).

  More specifically, first, for the electrode portions 2a and 2b, the outer shape in plan view is formed by the first resist patterns 302a and 302b, and by half etching of the metal substrate 301 from the second resist pattern side, The portions on the bottom side of the electrode portions 2a and 2b are etched to be positioned on the optical semiconductor element in the form of the optical semiconductor device, and on the side facing the bottom reflector, the optical semiconductor element Is formed in a form having a surface on which is mounted.

  As for the side wall portions 3a and 3b, the outer shape of the top surface is formed by the first resist patterns 302c and 302d, and the outer shape of the bottom surface is formed by the second resist patterns 303a and 303b. Therefore, the shape of the side wall portions 3a and 3b is arranged so as to surround the optical semiconductor element in a plan view in the configuration constituting the optical semiconductor device, and the surface on the bottom reflector side is the electrode portion. The optical semiconductor element is formed so as to be located closer to the bottom reflector side than the surface on which the optical semiconductor element is mounted.

  Further, when viewed in plan, the second resist patterns 303a and 303b are projected from the first resist patterns 302c and 302d so as to protrude to the side surrounding the optical semiconductor element. 3b of the side surface surrounding the optical semiconductor element, when the optical semiconductor device lead frame is viewed in plan, the end of the side surface on the bottom reflector side is the end opposite to the bottom reflector It can be formed in a shape that is located closer to the optical semiconductor element than the portion.

  The etching solution used for the above-described etching can be appropriately selected according to the material of the metal substrate 301 to be used. For example, when copper is used for the metal substrate 301, a ferric chloride aqueous solution can be used.

  Thereafter, the first resist patterns 302a, 302b, 302c, and 302d and the second resist patterns 303a and 303b are removed, and the lead frame for an optical semiconductor device according to the present invention, that is, the electrode portion and the side wall portion is formed. The electrode portion has a surface on which the optical semiconductor element is mounted on a side facing the bottom-side reflector in the form of the optical semiconductor device. The side wall portion is disposed so as to surround the optical semiconductor element in a plan view in the form of the optical semiconductor device, and the surface of the side wall portion on the bottom reflector side is the electrode portion. It is possible to obtain an optical semiconductor device lead frame located on the bottom reflector side of the surface on which the optical semiconductor element is mounted (FIGS. 5E, 6C, and 7C). ).

As described above, in the lead frame for an optical semiconductor device according to the present invention, it is preferable that a plating film containing silver is formed on the electrode portion and the side wall portion.
In the present invention, for example, by performing electroplating on the lead frame for an optical semiconductor device shown in FIG. 5E, the plating film 4 containing silver on the surfaces of the electrode portions 2a and 2b and the surfaces of the side wall portions 3a and 3b. The lead frame 1 for optical semiconductor devices in which is formed can be obtained (FIG. 5F).

The plating film 4 described above can be formed, for example, by electrolytic plating using a silver plating solution containing silver cyanide as a main component.
In addition, before forming the plating film 4, for example, an electrolytic degreasing process, a pickling process, and a copper strike process may be selected as appropriate, and then the plated layer 4 may be formed through an electrolytic plating process.

  As described above, according to the manufacturing method described above, the lead frame for an optical semiconductor device according to the present invention can be manufactured.

[Method for Manufacturing Optical Semiconductor Device]
Next, a method for manufacturing an optical semiconductor device according to the present invention will be described.
An optical semiconductor device manufacturing method according to the present invention includes the above-described lead frame for an optical semiconductor device according to the present invention, an optical semiconductor element, and at least one of light emitted from the optical semiconductor element. An optical semiconductor device manufacturing method comprising: a translucent resin that passes through a portion; and the bottom reflector, wherein the optical semiconductor element of the electrode portion of the lead frame for an optical semiconductor device is mounted. Bonding the terminal portion of the optical semiconductor element to the surface, bonding the bottom reflector to either the optical semiconductor element or the sidewall portion, or both; and the translucent resin Sealing the optical semiconductor element.

  Hereinafter, it demonstrates using drawing. As described above, here, a method for manufacturing an optical semiconductor device according to the present invention will be described using the optical semiconductor device lead frame described in the first embodiment.

FIG. 8 is a schematic process diagram showing an example of a method of manufacturing an optical semiconductor device according to the present invention.
To manufacture the optical semiconductor device according to the present invention, for example, as shown in FIG. 8A, first, an optical semiconductor device lead frame 1 according to the present invention is prepared, and the optical semiconductor device lead frame 1 is prepared. The protruding terminal portions 220 formed on the top surface of the optical semiconductor element 210 are joined to the electrode portions 2a and 2b, respectively (FIG. 8B).

  The protruding terminal portion 220 is formed by, for example, forming a gold bump on a gold pad, and the above bonding method includes a thermocompression bonding method and an ultrasonic bonding method used for conventional flip chip bonding. These known methods can be used.

  Next, the bottom reflector is bonded to either the optical semiconductor element, the side wall portion, or both. Here, an example in which the bottom reflector is bonded to both the optical semiconductor element and the side wall portion will be described.

  For example, in the present invention, as shown in FIG. 8C, a bottom reflector 230 is bonded to the bottom surface of the optical semiconductor element 210, and the side wall portion of the optical semiconductor device lead frame is formed. The bottom reflector 230 is also joined to the bottom surfaces of 3a and 3b.

  The joining method of the optical semiconductor element 210 and the bottom reflector 230 is not particularly limited as long as the heat of the optical semiconductor element 210 can be conducted to the bottom reflector 230 and released to the outside. Bonding can be performed using solder or a heat dissipating adhesive.

Various adhesives can be used for the method of joining the side wall portions 3a and 3b and the bottom reflecting plate 230. Among them, a method of joining using solder or a heat dissipating adhesive is preferable.
In the subsequent process, when the translucent resin 240 is filled, the translucent resin 240 can be prevented from leaking from the gap between the bottom surfaces of the side walls 3a and 3b and the bottom reflector 230. In addition, the heat of the optical semiconductor element 210 conducted to the bottom reflecting plate 230 can be further conducted to the side wall portions 3a and 3b of the lead frame 1 for the optical semiconductor device to be discharged to the outside. This is because the effect of the optical semiconductor device having excellent properties can also be achieved.

In the present invention, the method is not limited to the above, and a method of bonding the bottom reflector to either the optical semiconductor element or the side wall portion may be used.
Here, when the bottom-side reflector is bonded to the optical semiconductor element, heat of the optical semiconductor element can be conducted to the bottom-side reflector and released to the outside, and the bottom-side is placed on the side wall portion. When the reflecting plates are joined, it is possible to prevent the translucent resin 240 from leaking from the gap between the bottom surface of the side walls 3a and 3b and the bottom reflecting plate 230.

  Next, as shown in FIG. 8D, the region surrounded by the side walls 3a and 3b is filled with a light-transmitting resin 240, and the optical semiconductor element 210 is sealed with the light-transmitting resin 240. An optical semiconductor device 200 according to the invention is obtained.

  As described above, here, the method for manufacturing an optical semiconductor device according to the present invention has been described using the optical semiconductor device lead frame 1 described in the first embodiment, but the optical semiconductor according to the present invention is also described. The device can also be manufactured using the lead frame 100 for an optical semiconductor device having the multi-face mounting configuration described in the second embodiment.

  In the present invention, in order to obtain the optical semiconductor device 200 from the optical semiconductor device lead frame 100 of the second embodiment shown in FIG. 2, for example, the optical semiconductor device lead frame 100 of the second embodiment is multifaceted. The optical semiconductor element 210 is mounted on each of the optical semiconductor device lead frames 1, and the terminal portions 220 of the optical semiconductor elements 210 and the electrode portions 2a and 2b of the optical semiconductor device lead frames 1 are the same as described above. Are bonded to each of the optical semiconductor elements 210 and / or the side walls 3a and 3b, or both, and the optical semiconductor elements 210 are sealed with a translucent resin 240. Thereafter, the connecting portions 111a, 111b, 112, 113a, 113b, and 114 in the optical semiconductor device lead frame 100 of the second embodiment are formed. By cross to individually separated (dicing), it is possible to obtain an optical semiconductor device 200 according to the present invention.

  Although the optical semiconductor device lead frame, the optical semiconductor device, and the manufacturing methods thereof according to the present invention have been described above, the present invention is not limited to the above-described embodiment. The above-described embodiment is an exemplification, and the technical idea described in the claims of the present invention has substantially the same configuration and exhibits the same function and effect regardless of the case. It is included in the technical scope of the invention.

DESCRIPTION OF SYMBOLS 1 ... Optical semiconductor device lead frame 2a, 2b ... Electrode part 3a, 3b ... Side wall part 4 ... Plating film 100 ... Optical semiconductor device lead frame 111a, 111b ... Connection part DESCRIPTION OF SYMBOLS 112 ... Connection part 113a, 113b ... Connection part 114 ... Connection part 121 ... Outer frame part 200 ... Optical semiconductor device 210 ... Optical semiconductor element 220 ... Terminal part 230 ... -Bottom reflector 231 ... Metal plate 232 ... Metal foil 233 ... Plating film 234 ... Gas barrier layer 240 ... Translucent resin 301 ... Metal substrate 302 ... First Resist layer 303 ... second resist layer 302a, 302b, 302c, 302d ... first resist pattern 303a, 303b ... second resist pattern 500 ... optical semiconductor device 501 ... lead frames 502a, 502b ... electrode portion 503 ... plated film 510 ... LED element 520 ... bonding wires 530 ... insulating resin 540 ... translucent resin

Claims (12)

An optical semiconductor device lead frame for configuring an optical semiconductor device having an optical semiconductor element on a bottom reflector that reflects at least part of light emitted by the optical semiconductor element,
The lead frame for optical semiconductor devices is
Having an electrode part and a side wall part,
The electrode part is
In the form constituting the optical semiconductor device, the optical semiconductor device is located on the optical semiconductor element, and has a surface on which the optical semiconductor element is mounted on the side facing the bottom reflector.
The side wall portion is
The optical semiconductor device is arranged so as to surround the optical semiconductor element in a plan view in the form constituting the optical semiconductor device,
The lead frame for an optical semiconductor device, wherein a surface of the side wall portion on the side of the bottom reflector is located closer to the bottom reflector than a surface of the electrode portion on which the optical semiconductor element is mounted.   When the side wall portion surrounds the optical semiconductor element, the end of the side reflector on the side opposite to the bottom reflector when the optical semiconductor device lead frame is viewed in plan view The lead frame for an optical semiconductor device according to claim 1, wherein the lead frame for an optical semiconductor device has a shape that is positioned closer to the optical semiconductor element side than an end portion on the side.   The lead frame for an optical semiconductor device according to claim 1, wherein the electrode part and the side wall part are made of the same metal material, and the electrode part and the side wall part are separated from each other.   4. The lead frame for an optical semiconductor device according to claim 1, wherein a plating film containing silver is formed on the electrode part and the side wall part. 5.   5. A lead frame for an optical semiconductor device, wherein a plurality of lead frames for an optical semiconductor device according to claim 1 are multifaceted in a planar shape via a connecting portion.   5. The lead frame for an optical semiconductor device according to claim 1, an optical semiconductor element, and the optical semiconductor element are sealed, and at least part of light emitted from the optical semiconductor element is transmitted. An optical semiconductor device comprising: a translucent resin; and the bottom reflector.   The optical semiconductor device according to claim 6, wherein a terminal portion of the optical semiconductor element is bonded to a surface of the electrode portion on which the optical semiconductor element is mounted.   The optical semiconductor device according to claim 6, wherein the optical semiconductor element and the bottom reflector are bonded.   9. The optical semiconductor device according to claim 6, wherein the side wall portion is joined to the bottom-side reflecting plate at a surface on the bottom-side reflecting plate side. A lead frame for an optical semiconductor device for constituting an optical semiconductor device having an optical semiconductor element on a bottom reflecting plate that reflects at least a part of light emitted from the optical semiconductor element, comprising an electrode portion and a side wall portion. The electrode portion has a surface on the optical semiconductor element in a form constituting the optical semiconductor device and on which the optical semiconductor element is mounted on the side facing the bottom reflector. The side wall portion is disposed so as to surround the optical semiconductor element in a plan view in a form constituting the optical semiconductor device, and a surface of the side wall portion on the bottom reflector side of the electrode portion A method of manufacturing a lead frame for an optical semiconductor device positioned on the bottom reflector side of a surface on which the optical semiconductor element is mounted,
Preparing a metal substrate;
On one main surface of the metal substrate, a region on the side opposite to the surface on which the optical semiconductor element is mounted of the electrode portion, and a side opposite to the bottom reflector side of the side wall portion Forming a first resist pattern covering a region to be a surface;
Forming a second resist pattern that covers a region on the side opposite to the one main surface of the metal substrate that covers the surface of the side wall portion on the bottom reflector side;
Etching step of half-etching each surface of the metal substrate exposed from the first resist pattern and the second resist pattern to form the electrode portion and the side wall portion in the same step;
A method of manufacturing a lead frame for an optical semiconductor device, comprising:   An optical semiconductor device for optical semiconductor device comprising a step of forming a plating film containing silver on the electrode portion and the side wall portion following the step of the method for manufacturing a lead frame for an optical semiconductor device according to claim 10. Lead frame manufacturing method. A lead frame for an optical semiconductor device for constituting an optical semiconductor device having an optical semiconductor element on a bottom reflecting plate that reflects at least a part of light emitted from the optical semiconductor element, comprising an electrode portion and a side wall portion. The electrode portion has a surface on the optical semiconductor element in a form constituting the optical semiconductor device and on which the optical semiconductor element is mounted on the side facing the bottom reflector. The side wall portion is disposed so as to surround the optical semiconductor element in a plan view in a form constituting the optical semiconductor device, and a surface of the side wall portion on the bottom reflector side of the electrode portion A lead frame for an optical semiconductor device located on the bottom reflector side of the surface on which the optical semiconductor element is mounted, an optical semiconductor element, and the optical semiconductor element are sealed, and light emitted from the optical semiconductor element is sealed At least partially transparent An optical resin, a method of manufacturing an optical semiconductor device provided with, said bottom reflector,
Bonding a terminal portion of the optical semiconductor element to a surface of the electrode portion on which the optical semiconductor element is mounted;
Bonding the bottom reflector to either the optical semiconductor element or the side wall, or both;
Sealing the optical semiconductor element with the translucent resin;
A method for manufacturing an optical semiconductor device, comprising:

Images