JP2013219230A - Nanoimprint method and nanoimprint device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a nanoimprint method using a template having a dimple on its rear surface, along with a nanoimprint device, capable of suppressing pattern displacement caused by local pattern distortion that occurs in a transfer pattern.SOLUTION: A first main surface 11 of a template 10 has a protruding step structure 14 which is higher than surroundings, and a pattern region 13 provided with a rough pattern is formed at the step structure. A second main surface 12 has a dimple 15 whose area is wider than the pattern region of the first main surface. When the template 10 is pressed against a worked substrate 17, at two points, at least, other than a region equipped with the dimple 15 of the step structure 14, inclination of the template 10 or an interval between the template 10 and the worked substrate 17 is measured. By adjusting a force that pressurizes the template 10, the amount of displacement of the transfer pattern is reduced.

Description

  The present invention relates to a nanoimprint method for forming a fine uneven pattern and a nanoimprint apparatus using the nanoimprint method.

  In recent years, particularly in semiconductor devices, high speed operation and low power consumption operation are required due to further progress in miniaturization, and high technology such as integration of functions called system LSIs is required. Under such circumstances, the lithography technology, which is essential for producing semiconductor device patterns, has pointed out the limitations of the photolithographic method due to the problem of exposure wavelength as the device pattern becomes finer, and the exposure apparatus is extremely expensive. It has become to.

  In recent years, the nanoimprint lithography (NIL) method using a fine concavo-convex pattern has attracted attention as an alternative. The nanoimprint (also referred to as imprint) method proposed by Chou et al. In Princeton University in 1995 is expected as a technique that can form a fine pattern having a high resolution of about 10 nm while the apparatus price and materials used are inexpensive. Yes.

  In the nanoimprint method, a template with a nanometer-sized uneven pattern formed on the surface in advance is pressed against a transfer material such as a resin applied and formed on the surface of the substrate to be mechanically deformed to precisely transfer the uneven pattern, This is a technique for processing a substrate to be processed using a patterned nanoimprint material as a resist mask. Once the template is made, the nanostructure can be easily and repeatedly molded, so that high throughput is obtained and it is economical, and since it is a nano-processing technology with less harmful waste, not only semiconductor devices in recent years, Applications in various fields are being promoted.

  As such a nanoimprint method, a thermal nanoimprint method in which a concavo-convex pattern is transferred by heat using a thermoplastic resin, a photo nanoimprint method in which a concavo-convex pattern is transferred by ultraviolet rays using a photocurable material, and the like are known. As the transfer material, a thermoplastic resin is used in the thermal nanoimprint method, and a photocurable material such as a photocurable resin is used in the optical nanoimprint method. The optical nanoimprint method can transfer patterns at room temperature with a low applied pressure, and does not require a heating / cooling cycle like the thermal nanoimprint method and does not cause dimensional changes due to the heat of the template or resin. It is said that it is excellent in terms of sex. Hereinafter, in the present invention, the optical nanoimprint method is simply referred to as a nanoimprint method.

  Conventionally, in the nanoimprint method, after nanoimprinting, it is often difficult to release the adhered template and the substrate to be processed. In this release process, a defect occurs in the transfer pattern, or distortion (distortion) occurs in the transfer pattern. ) Caused a displacement of the pattern.

  In order to prevent the occurrence of defects in the mold release process, as shown in FIG. 6, a template 64 is used in which the back side opposite to the concavo-convex pattern of the template (also referred to as a mold) is processed to reduce the thickness and provide a recess. A template for preventing and minimizing gas confinement and / or gas pockets in the pattern layer between the transfer substrate 62 and the template has been proposed (see Patent Document 1). In addition, in order to correct the distortion of the transferred pattern, a plurality of holding units that hold the peripheral portion of the template and a plurality of holding units are used to control the operation of the driving mechanism based on the distortion information of the transferred pattern. An imprinting device having a mechanism for positioning a portion with respect to a base in the Z-axis direction is disclosed (see Patent Document 2).

Special table 2009-536591 JP 2010-80714 A

  However, the invention described in Patent Document 1 is not touched by the distortion of the transfer pattern. When nanoimprinting is performed using a template having a depression on the back surface, a nanoimprint region (convexity) in which the template and the substrate to be processed are in contact with each other. It was found that local pattern distortion occurs in the vicinity of the boundary of the shape step region, also referred to as a mesa region). This problem of local pattern distortion causes deterioration of the “pattern position accuracy” of the transfer pattern. “Pattern position accuracy” is the standard deviation (3σ) of the positional deviation between the ideal lattice and the pattern center defined excluding the isotropic magnification error. The apparatus described in Patent Document 2 is an invention that forcibly corrects distortion on the XY plane of a transfer pattern using a holding drive mechanism in the XY and Z directions for imprinting on a wafer using a template. However, there is a problem that it is a mechanism that is difficult to cope with regarding the newly found local distortion.

  Therefore, the present invention has been made in view of the above problems. That is, the object of the present invention is to reduce pattern displacement due to local pattern distortion generated in a transfer pattern by nanoimprinting in a nanoimprinting method in the case of having a step structure on at least one surface of a template or a substrate to be processed and a depression on the back surface. An object of the present invention is to provide a suppressed nanoimprint method and a nanoimprint apparatus using the nanoimprint method.

  When the template has a step structure and a depression, the region where the displacement of the transfer pattern of the substrate to be processed is large is a region in contact with the periphery of the step structure (mesa structure) of the template of the substrate to be processed. It has been found that the cause is that distortion occurs in the periphery of the step structure when the pressing force is not appropriate. Moreover, when it was in the state, it discovered that the local inclination (angle) with respect to a to-be-processed substrate also changed in the peripheral part of the level | step difference structure of a template. In the present invention, the degree of deformation outside the step area (outside the nanoimprint area) of the template is measured, the pressing force is adjusted, and the displacement (positional deviation) from the design value of the transfer pattern is reduced for nanoimprinting. It is. Further, in the present invention, when the substrate to be processed has a step structure and a dent, the degree of deformation outside the step region of the substrate to be processed is measured, and the pressing force is adjusted to change the transfer pattern from the design value. Nanoimprinting is performed by reducing (the amount of misalignment).

  In order to solve the above-described problem, the nanoimprint method according to the first aspect of the present invention includes a photocurable resin layer formed on a substrate to be processed, and an uneven pattern is provided on the photocurable resin layer. The light transmissive template is pressed, irradiated with light through the template to cure the photocurable resin layer, the template is released from the cured photocurable resin layer, and the substrate is processed. Forming a cured photocurable resin layer on the substrate, etching the cured photocurable resin layer and the substrate to be processed, and forming a concavo-convex transfer pattern on the substrate to be processed, the nanoimprint method comprising: The template has a first main surface and a second main surface, the first main surface has a convex step structure higher than the surroundings, and the uneven structure is provided on the step structure. Area And the second main surface opposite to the first main surface overlaps the pattern region of the first main surface and has a larger area than the pattern region of the first main surface. When the template is pressed against the photocurable resin layer, the template is tilted or the template and the cover at least at two or more locations outside the step structure region of the template. The distance from the processed substrate is measured, and the pressing force is adjusted to reduce the amount of positional deviation from the design value of the transfer pattern.

  In the nanoimprint method according to the second aspect of the present invention, a photocurable resin layer is formed on a substrate to be processed, and a light transmissive template provided with an uneven pattern on the photocurable resin layer is pressed, Irradiating light through the template to cure the photocurable resin layer, releasing the template from the cured photocurable resin layer, and curing the photocurable resin layer on the substrate to be processed A nanoimprint method of forming a concavo-convex transfer pattern on the substrate to be processed by etching the cured photocurable resin layer and the substrate to be processed, wherein the template has a light transmission property in a parallel plane. A pattern region having the uneven pattern formed on a substrate is a template having no step structure and a depression, and the substrate to be processed has a first main surface and a second main surface. The first main surface has a convex step structure higher than the surrounding as a pattern region for forming the transfer pattern, and the second main surface facing the first main surface is The substrate to be processed when the template is pressed against the photocurable resin layer, wherein the substrate is provided with a recess that overlaps with the pattern region of the first main surface and is wider than the pattern region of the first main surface. Measuring the inclination of the substrate to be processed or the distance between the template and the substrate to be processed in at least two places outside the step structure region of the region having the depression, and adjusting the pressing force, The amount of positional deviation from the design value of the transfer pattern is reduced.

  The nanoimprint method according to claim 3 of the present invention is the nanoimprint method according to claim 1 or 2, wherein the template or the substrate to be processed is inclined, or the template and the substrate to be processed are A laser microscope or an autocollimator is used to measure the interval.

  The nanoimprint method according to the fourth aspect of the present invention is the nanoimprint method according to any one of the first to third aspects, wherein the template is pressed against the boundary region of the step structure. Is controlled locally to adjust the pressing force.

  The nanoimprint method according to the fifth aspect of the present invention is the nanoimprint method according to any one of the first to fourth aspects, wherein the template or the substrate to be processed is in the recess. The pressure is controlled to adjust the pressing force.

  The nanoimprint method according to claim 6 of the present invention is the nanoimprint method according to any one of claims 1 to 5, wherein the template is a quartz glass substrate. It is what.

  A nanoimprint apparatus according to a seventh aspect of the present invention uses the nanoimprint method according to any one of the first to sixth aspects.

  According to the nanoimprint method of the present invention, when using a template having a depression on the back surface and having a stepped structure on the pattern area on the front surface, when producing a transfer pattern by nanoimprinting on the substrate to be processed, the area having the template depression In this case, the amount of positional deviation from the design value of the transfer pattern is measured by measuring the inclination of the template or the distance between the template and the substrate to be processed at at least two locations outside the step structure region, and adjusting the pressing force of the template. Can be reduced.

  According to the nanoimprint method of the present invention, when a transfer pattern is manufactured by nanoimprinting a template pattern using a substrate to be processed having a step structure in a region where a recess is formed on the back surface and a transfer pattern is formed on the front surface. By measuring the inclination of the substrate to be processed or the distance between the template and the substrate to be processed in at least two places outside the region of the step structure in the region having the recess of the substrate to be processed, and adjusting the force for pressing the template, It is possible to reduce the amount of positional deviation from the design value of the transfer pattern.

  The nanoimprint apparatus of the present invention can reduce the pattern distortion of the transfer pattern by providing a measuring device for measuring the inclination of the template or the substrate to be processed or the distance between the template and the substrate to be processed in the nanoimprint apparatus. A device for nanoimprinting is obtained.

It is process cross-sectional schematic diagram which shows 1st Embodiment of the nanoimprint method of this invention. It is process cross-sectional schematic diagram which shows 1st Embodiment of the nanoimprint method of this invention following FIG. It is process cross-sectional schematic diagram which shows 2nd Embodiment of the nanoimprint method of this invention. It is process cross-sectional schematic diagram which shows 2nd Embodiment of the nanoimprint method of this invention following FIG. When a template has a level | step difference structure, it is a figure which shows the displacement of the pattern in the boundary area | region of the level | step difference structure of a template. It is sectional drawing of the pattern formation apparatus which nanoimprints using the template which has the mesa area | region which has the conventional mesa area | region, and has a dent on the back surface.

  Hereinafter, based on the drawings, a nanoimprint method according to an embodiment of the present invention and a nanoimprint apparatus using the nanoimprint method will be described in detail.

<Nanoimprint method>
(First embodiment)
FIG. 1 and subsequent FIG. 2 are process cross-sectional schematic diagrams showing a first embodiment of the nanoimprint method of the present invention.

  First, a light transmissive template having an uneven pattern is prepared. Fig.1 (a) is a cross-sectional schematic diagram which shows an example of the template 10 used in 1st Embodiment of the nanoimprint method of this invention. The template 10 has a first main surface 11 and a second main surface 12, and the first main surface 11 of the template 10 has a convex step structure (also referred to as a mesa structure) 14 higher than the surroundings. And a pattern region in which the above-described uneven pattern is provided in the step structure. The second main surface 12 opposite to the first main surface 11 of the template 10 overlaps the pattern region 13 of the first main surface and has a larger area than the pattern region 13 of the first main surface. It has a recess 15. Hereinafter, the template 10 having the above configuration will be described in more detail.

  In the conventional nanoimprint method, it is difficult to release molds after nanoimprinting between substrates having a thick template and a substrate to be processed. On the other hand, the template 10 in the nanoimprinting method of the present embodiment has a pattern region 13. And the depression 15 having a larger area than the pattern region 13, the template 10 is deformed to some extent when the template is released from the substrate after nanoimprinting, and is separated from the end of the template 10. It becomes possible. Further, the template 10 has an effect of extruding air around the concavo-convex pattern even during nanoimprinting, and can transfer a photo-curable resin pattern in which the occurrence of defects is suppressed.

  As described above, in order to easily start the mold release, it is only necessary to provide a recess in at least one of the template 10 or the substrate to be processed. However, the substrate to be processed is often not provided with a recess due to required characteristics. Therefore, in the nanoimprint method of the present embodiment, a recess is provided on the template side. Of course, when a recess is provided on the substrate to be processed, the recess may also be provided on the transfer substrate side.

  In the nanoimprint method of the present invention, the template 10 forms a pattern by electron beam lithography, and a photomask manufacturing apparatus is used for dry etching or the like, so that the substrate 10 has a substrate structure that is easily adapted to a conventional photomask manufacturing apparatus or mask process. Is desirable. For example, one main surface of a parallel flat quartz glass substrate having an outer shape of 6 inches square and a thickness of 0.25 inches has a step structure, and a pattern region in which an uneven pattern is provided on the step structure is formed, and the other main surface is formed. A template with a depression on the surface is used.

  The shape of the recess 15 of the template 10 of the present invention has a shape selected from a group of geometric shapes including a square, a rectangle, a circle, and an ellipse.

  Further, the recess 15 of the template 10 includes a bottom surface 16 parallel to the first main surface 11, and the distance from the first main surface 11 to the bottom surface 16 of the recess is smaller than half of the thickness of the template 10. Is preferred. By reducing the thickness of the substrate in the indentation region to be smaller than half the thickness of the template, the template 10 is elastically deformed when the template and the substrate to be processed are released after nanoimprinting, making it easy to release the template. Because it becomes.

  On the other hand, the lower limit of the distance from the first main surface 11 to the bottom surface 16 of the indentation varies depending on the material of the template, the indentation region, the shape / area of the step structure, etc., but has a certain thickness to maintain the strength as the template More than that is necessary. For example, when a circular recess having a diameter of 60 mm is provided on a 0.25 inch thick quartz glass substrate, the thickness is preferably at least 0.5 mm.

  The template 10 in the nanoimprinting method of the present invention has a convex step structure (mesa structure) 14 in which the pattern region 13 of the first main surface 11 is higher than the surroundings. Other parts of the substrate to be transferred are prevented from coming into contact with the master template to cause defects or breakage, and the number of contact parts is reduced to facilitate the release of the two. Furthermore, when a plurality of shots of nanoimprint are specifically applied to the transfer substrate, a good pattern can be formed without interfering with the previously nanoimprinted pattern.

  As the substrate to be processed, various substrates that are desired to form a nanoimprint pattern, such as a quartz glass substrate and a silicon wafer substrate, are used.

  In the case of a semiconductor wafer application, the shape of the step structure (mesa structure) 14 is usually rectangular from the viewpoint of wafer production efficiency, but is not necessarily limited, and the shape may be other shapes or irregular shapes. There may be. The height of the convex step structure is provided in the range of several μm to several tens of μm. The area of the pattern region 13 having the step structure depends on a required pattern of one field, but is set to a rectangular shape of several tens mm × several tens mm, for example.

  In the present invention, examples of the material constituting the template 10 include optically polished quartz glass, soda glass, fluorite, and calcium fluoride that transmit light used for nanoimprinting. The quartz glass is a substrate for a photomask. As it has a proven track record and is stable in quality, it can be integrated into a light-transmitting structure by providing a step structure, indentation, and uneven pattern, and a highly accurate fine uneven pattern can be formed. More preferred.

Again, returning to FIG.
As shown in FIG. 1B, a substrate 17 to be processed is prepared, a photocurable resin is applied to the surface to be processed, and a photocurable resin layer 18 is formed. On the other hand, the above template 10 provided with a concavo-convex pattern to be transferred is prepared.

  In the present invention, a conventionally known spin coating method or inkjet coating method is used as a coating method of the photocurable resin, but the photocurable resin is controlled by controlling the coating amount by dividing the field into predetermined regions. An inkjet method that can be applied is more preferable. This is because in the nanoimprint method, it may be necessary to change the required amount of the photocurable resin to be applied according to the pattern density to be transferred. One field corresponds to one shot size for nanoimprinting.

  Next, as shown in FIG. 1 (c), the concave / convex pattern of the template 10 is brought into close contact with the photocurable resin layer 18 on the substrate to be processed 17 and pressed with a predetermined pressing force 19. In the nanoimprint method of the present embodiment, when pressing the template 10 against the photocurable resin layer 18, the inclination of the template or the distance between the template and the substrate to be processed (gap) at at least two places outside the region of the step structure 14. Is measured and the pressing force 19 is adjusted to reduce the amount of positional deviation from the design value of the transfer pattern.

  In the present invention, as shown in FIG. 1C, a laser microscope or an autocollimator is used as the measuring device 21 to measure the inclination of the template 10 or the distance between the template 10 and the substrate 17 to be processed. . When the force at the time of pattern transfer is not appropriate, large pattern distortion is locally generated especially around the outer peripheral portion of the transfer region. In this case, in the area having the template depression, the pressing force 19 that causes local pattern distortion is adjusted by measuring the degree of deformation of the template in the area outside the transfer area (stepped area). Can be reduced.

  As a means for adjusting the pressing force 19, a method of controlling the pressing force of the template 10 or a method of controlling the pressure on the depression 15 side can be applied. FIG. 1D illustrates a case where the pressure at the time of transfer is appropriately adjusted by controlling the back pressure 22 in the recess 15 as a method of controlling the pressure on the recess 15 side.

  Next, after appropriately adjusting the pressure at the time of transfer so as to reduce the distortion of the transfer pattern, as shown in FIG. 2E, a photocurable resin layer cured by irradiating with light (ultraviolet light) 23 24 is formed.

  Next, the template 10 is released from the cured photocurable resin layer 24. After the release, as shown in FIG. 2F, a transfer pattern is formed by the cured photocurable resin layer 24 on the substrate 17 to be processed.

  In the nanoimprint method, a portion of the photocurable resin corresponding to the convex portion of the concave / convex pattern of the template 10 remains as a thin residual film on the substrate 17 to be processed, so that oxygen gas was used as shown in FIG. The thin residual film is removed by ion etching or the like, and a cured photocurable resin pattern 25 is formed.

Next, using the photocurable resin pattern 25 as a mask, the substrate to be processed is dry-etched using, for example, CF ₄ gas, and the processed pattern having the uneven transfer pattern 26 is formed as shown in FIG. A substrate 20 is obtained.

  FIGS. 5A and 5B illustrate deformations that act on the template 51 when the template 51 having a step structure (mesa structure) and a depression is nanoimprinted on the substrate 52 and the pattern is transferred. It is a cross-sectional schematic diagram. FIG. 5B is an enlarged view in which the size of the horizontal component of deformation near the boundary of the step structure in the circle shown in FIG. The black and white density indicating the deformation in the horizontal direction is obtained by simulation. The higher the black density, the more rightward deformation in FIG. 5B, and the lower the black density, the greater the deformation in the left direction.

  As shown in FIG. 5A, when the pressing force of the template 51 to the workpiece substrate 52 is strong, near the boundary 53 of the nanoimprint region (step structure region) where the template 51 and the workpiece substrate 52 are in contact with each other, Stress is concentrated and deformation occurs. As a result, as shown in FIG. 5B, when the deformation shown by the thick black arrow locally occurs especially around the boundary 56 of the step structure, and the load (pressing force) is released, the center of the step structure 54 The displacement of the outward pattern from the portion remains. In FIG. 5, the horizontal component of the template deformation is shown, but the deformation is also generated in the vertical direction (not shown).

  In the nanoimprint method of the present invention, in order to remove local pattern distortion that occurs around the boundary of the step structure when the template is pressed against the photocurable resin layer, the region of the step structure Measure the inclination of the template or the distance between the template and the substrate to be processed (gap) 57 at at least two locations outside and adjust the pressing force to reduce the displacement (positional deviation) from the design value of the transfer pattern. It is something to be made. The degree of deformation (displacement) can be obtained by measuring the inclination of the template with respect to the substrate to be processed, or by measuring the distance (gap) 57 between the template and the substrate to be processed, and using a laser microscope or an autocollimator as a measuring instrument. Can do.

  In the present invention, the depth of the concave portion of the pattern region 13 formed by digging the step structure 14 of the template 10 shown in FIG. 1 is a desired resin pattern of a photocurable resin pattern formed on a substrate to be nanoimprinted such as a wafer substrate. For example, the depth of the concave portion of the concave / convex pattern is used in the range of 20 nm to 100 nm.

  In the nanoimprint method of the present invention, as shown in FIG. 2 (h), the uneven transfer pattern 26 of the substrate 20 on which the uneven transfer pattern 26 is formed is the pattern region of the template 10 shown in FIG. 1 (a). The pattern in which the concavo-convex relationship and the left-right relationship are reversed. Therefore, it is necessary if the pattern data of the template is converted in advance corresponding to the required pattern of the processed substrate, and the processed substrate is produced using a template having a pattern in which the concavo-convex relationship and the left-right relationship are reversed. A processed substrate having a desired pattern can be obtained. The method of converting the pattern data in advance is a preferable method that does not impose a load on the substrate manufacturing process and does not increase the occurrence of defects.

  According to the nanoimprint method of the present embodiment, when a transfer pattern is manufactured by nanoimprinting on a substrate to be processed using a template having a depression on the back surface and having a step structure in the pattern area on the front surface, the template imprint is provided. In the area, measure the inclination of the template or the distance between the template and the substrate to be processed in at least two places outside the step structure area, and adjust the force to press the template, thereby shifting the position of the transferred pattern from the design value. The amount can be reduced.

(Second Embodiment)
FIG. 3 and subsequent FIG. 4 are process cross-sectional schematic diagrams showing a second embodiment of the nanoimprint method of the present invention. This embodiment is a nanoimprint method suitable for manufacturing a replica template from a master template. Hereinafter, the second embodiment will be described by taking a replica template as an example, but the description of the contents common to the first embodiment will be omitted.

  First, as shown in FIG. 3A, a substrate to be processed 30 serving as a replica template is prepared. FIG. 3A is a schematic cross-sectional view of an example of the substrate to be processed 30.

  In the present embodiment, the substrate to be processed 30 includes, for example, a first principal surface 31 and a second principal surface 32 on a parallel flat quartz glass substrate having a size of 6 inches square and a thickness of 0.25 inches. And a pattern region 33 of the first main surface 31 that forms the transfer pattern has a convex step structure (mesa structure) 34 that is higher than the surroundings, and a second region that faces the first main surface 31. The main surface 32 has a recess 35 that overlaps the pattern region 33 of the first main surface and has a larger area than the pattern region 33 of the first main surface. , Located at the center of a 6-inch square quartz glass substrate.

  The shape of the recess 35 of the substrate to be processed 30 used in this embodiment has a shape selected from a group of geometric shapes including a square, a rectangle, a circle, and an ellipse.

  Further, the recess 35 of the substrate 30 to be processed has a bottom surface 36 parallel to the first main surface 31, and the distance (d) from the first main surface 31 to the bottom surface 36 of the recess is the thickness of the substrate 30 to be processed. It is preferably less than half of (t). When the master template and the substrate to be processed are separated from each other after nanoimprinting by reducing the thickness of the substrate in the indentation region to be smaller than half the thickness (t) of the substrate to be processed 30. This is because elastically deforms and becomes easy to release.

Next, as shown in FIG. 3B, a photocurable resin layer 37 is formed on the convex stepped structure 34 of the first main surface 31 of the prepared substrate 30 to be processed.
On the other hand, a template (also referred to as a master template) 38 provided with an uneven pattern 39 to be transferred is prepared.

  In the nanoimprint method of the present embodiment, the master template 38 is a substrate structure suitable for a photomask manufacturing apparatus and a mask process, for example, on a parallel flat quartz glass substrate having a size of 6 inches square and a thickness of 0.25 inches. A master template having an uneven pattern and having no step structure and depressions is used. The quartz glass substrate having the above-mentioned size is used with a photomask and has a high quality.

  Next, as shown in FIG. 3C, the concave / convex pattern 39 of the template 38 is brought into close contact with the photocurable resin layer 37 on the substrate to be processed 30 and pressed with a predetermined pressing force 42. In the nanoimprint method of the present embodiment, when pressing the template 38 against the photocurable resin layer 37, the substrate to be processed is provided in at least two locations outside the step structure 34 in the region of the substrate 30 to be recessed. The inclination of 30 or the distance (gap) between the template 38 and the substrate 30 to be processed is measured, and the pressing force 42 is adjusted to reduce the amount of positional deviation from the design value of the transfer pattern.

  In the present invention, as shown in FIG. 3C, a laser microscope or an autocollimator is used as a measuring instrument 41 to measure the inclination of the processing substrate 30 or the distance between the template 38 and the processing substrate 30. Used. FIG. 3C shows a case where measurement is performed from the side of the recess 35 of the substrate to be processed 30, but measurement is also possible from the side of the master template 38 using a light-transmitting substrate such as quartz glass. . When the force at the time of pattern transfer is not appropriate, large pattern distortion is locally generated especially around the outer peripheral portion of the transfer region. In this case, a pressing force 42 that causes local pattern distortion by measuring the degree of deformation of the substrate to be processed 30 in the region outside the transfer region (step region) in the region having the depression of the substrate to be processed 30. It is possible to reduce the pattern distortion.

  As a means for adjusting the pressing force 42, a method of controlling the pressing force of the template 38 or a method of controlling the pressure on the recess 35 side of the substrate to be processed 30 can be applied.

  Next, after appropriately adjusting the pressure at the time of transfer so as to reduce the distortion of the transfer pattern, as shown in FIG. 3D, a photocurable resin layer cured by irradiation with light (ultraviolet light) 43 44 is formed.

  Next, as shown in FIG. 4E, the template 38 is released from the cured photocurable resin layer 44, and after release, a convex step structure of the first main surface 31 of the substrate 30 to be processed. A transfer pattern is formed by the photo-curing resin layer 44 cured on the surface 34.

  In the nanoimprint method, a portion of the photocurable resin corresponding to the convex portion of the concave / convex pattern of the template remains as a thin residual film on the substrate to be processed 30, so that ions using oxygen gas are used as shown in FIG. The thin residual film is removed by etching or the like to form a cured photocurable resin pattern 45.

Next, using the photocurable resin pattern 45 as a mask, the substrate to be processed is dry-etched using, for example, CF ₄ gas, etc., and the uneven transfer pattern 46 is formed as shown in FIG. A substrate (referred to as a replica template) 40 is obtained.

  In the nanoimprint method of the present invention, it is also preferable that the substrate to be processed has a metal film formed on the surface to be processed. When forming a transfer pattern by dry etching a substrate to be processed, etching resistance may not be sufficient with only a cured photocurable resin pattern. Therefore, a method is used in which the cured photocurable resin pattern is converted into a metal film pattern, the substrate to be processed is dry-etched using the metal film pattern as a hard mask, and finally the metal film pattern is etched away. .

  As the metal film, various metal films are used depending on the characteristics of the substrate to be processed. For example, when the substrate to be processed is a quartz glass substrate, the metal film is resistant to a fluorine-based gas used when etching quartz glass. Large chromium or a compound containing chromium (chromium oxide, chromium nitride, chromium oxynitride, or the like) is preferable, and is used in a thickness range of about 5 nm to 80 nm.

  According to the nanoimprint method of the present embodiment, when using a substrate to be processed having a step structure in a region having a depression on the back surface and forming a transfer pattern on the front surface, a template pattern is nanoimprinted to produce a transfer pattern. By measuring the inclination of the substrate to be processed or the distance between the template and the substrate to be processed and adjusting the force for pressing the template in at least two places outside the region of the step structure in the region of the substrate to be recessed. Thus, it is possible to reduce the amount of positional deviation from the design value of the transfer pattern.

<Nanoimprinting device>
A nanoimprint apparatus according to the present invention is an apparatus using the nanoimprint method described above, wherein at least two or more locations outside the region of the step structure of the template or the substrate to be processed, the inclination of the template or the substrate to be processed, or the template and the substrate to be processed This is a nanoimprinting apparatus that can adjust the force with which the template is pressed against the substrate to be processed by providing a measuring instrument that measures the distance between the patterns, and can reduce the pattern distortion of the transfer pattern. A laser microscope or an autocollimator is preferably used as a measuring instrument for measuring the inclination or interval.
Next, an example explains the present invention.

Example 1
As a template for nanoimprinting, it has a step structure (mesa structure) with an area of 25 mm × 30 mm that is 30 μm higher than the surroundings on the first main surface of a synthetic quartz glass substrate having an outer shape of 6 inches square and a thickness of 0.25 inches. An uneven pattern is formed in the step structure, and a circular shape with a diameter of 60 mm having a larger area than the pattern region of the first main surface and overlapping the pattern region of the first main surface on the second main surface A substrate having an indentation was prepared. The thickness of the quartz glass substrate where the depression was formed was 1 mm.

  The depth of the concave portion of the prepared template pattern was 50 nm. The patterns were two patterns: a plurality of line and space patterns with a recess width of 40 nm and a pitch of 80 nm, and a plurality of line and space patterns with a recess width of 30 nm and a pitch of 60 nm. The template pattern is obtained by presetting a pattern obtained by reversing the concavo-convex relationship and the left-right relationship of the required pattern of the substrate to be processed.

  Next, a synthetic quartz glass substrate similar to the template was prepared as a substrate to be processed. A photocurable resin for nanoimprinting was applied on this substrate to be processed by an inkjet method for one field. Subsequently, using the above template, the collimator is pressed against the photocurable resin layer on the substrate to be processed, and the autocollimator is located at two positions on the dent side, which is a symmetrical position, outside the template step structure region from the template dent side. (Laser angle measuring device) was provided, and the tilt angle of the template with respect to the substrate to be processed was measured. The accuracy of the autocollimator is ± 0.01 seconds.

  Since the tilt angles at the two locations were 0.20 seconds and 0.23 seconds, the force for pressing the template was adjusted so that both locations were within ± 0.02 seconds, and light was transmitted through the template in this state. The photocurable resin was photocured by irradiation with ultraviolet light that sensitized the curable resin.

  Next, the template was released from the substrate to be processed by applying a release force upward from two opposite end faces of the template. The template had a dent and could be pulled away from the end face by being deformed to some extent. The uneven pattern of the photocurable resin was transferred onto the substrate to be processed, and the photocurable resin pattern had a uniform film thickness with a photocurable resin height of 50 nm and a remaining film thickness of 15 nm in the field.

  Next, the photocurable resin remaining as a thin residual film on the substrate to be processed is removed by ion etching using oxygen gas, and the photocurable resin pattern having a height of 35 nm is cured on the substrate to be processed. Formed.

Next, using the photo-curable resin pattern as a mask, the quartz glass of the substrate to be processed is dry-etched using CF ₄ gas, and then the photo-curable resin pattern is peeled off to form an uneven transfer pattern by the quartz glass. Got. The pattern of the replica template is a pattern in which the concavo-convex relationship and the left-right relationship are reversed from the pattern of the original template serving as a master, a plurality of line and space patterns having a recess depth of 50 nm, a recess width of 40 nm, and a pitch of 80 nm, and a recess And two line and space patterns having a width of 30 nm and a pitch of 60 nm.

  In the nanoimprint method of this example, the displacement of a region with large misalignment that occurs in the nanoimprint process is measured during nanoimprint outside the nanoimprint region, and the amount of misalignment is reduced by adjusting the pressing force, thereby reducing pattern distortion. Nanoimprinting with less is possible.

(Example 2)
This example is an example of producing a replica template. As a master template for nanoimprinting, an electron beam resist is applied to a main surface of a synthetic quartz glass substrate having a size of 6 inches square and a thickness of 0.25 inches, with a thickness of 200 nm. After forming the pattern, the quartz glass was dry-etched with CF ₄ gas, and then the resist pattern was peeled off to produce a master template in which a concavo-convex pattern was formed on the quartz glass.

  The master template of the present example did not have a step structure and a depression, and the depth of the concave portion of the template pattern was 50 nm. Similar to the pattern of Example 1, the patterns were two patterns of a plurality of line and space patterns with a recess width of 40 nm and a pitch of 80 nm and a plurality of line and space patterns with a recess width of 30 nm and a pitch of 60 nm. The template pattern is obtained by presetting a pattern obtained by reversing the concavo-convex relationship and the left-right relationship of the required pattern of the substrate to be processed.

  On the other hand, as a substrate to be transferred for a replica template, as a region for forming a pattern (pattern region) in the center of the first main surface of a synthetic quartz glass substrate having a size of 6 inches square and a thickness of 0.25 inches, It has a convex step structure (mesa structure) having an area of 25 mm × 30 mm that is 30 μm higher than the surroundings, and overlaps with the pattern region of the first main surface on the second main surface, and the pattern of the first main surface A substrate having a circular depression with a diameter of 60 mm and a larger area than the region was prepared. The thickness of the quartz glass substrate where the depression was formed was 1 mm.

  Next, one field of a photo-curable resin for nanoimprinting was applied onto the substrate to be processed by an inkjet method. Subsequently, using the above master template, it is pressed against the photocurable resin layer on the substrate to be processed, and from the recess side of the substrate to be processed, outside the step structure region of the substrate to be processed, on the recess side that is a symmetrical position. Auto collimators (laser angle measuring devices) are installed at two locations, the tilt angle of the substrate to be processed is measured with respect to the template, and the force for pressing the template is adjusted so that both locations are within ± 0.02 seconds. The photocurable resin was photocured by irradiating ultraviolet light that sensitizes the photocurable resin through the template.

  Next, a release force was applied upward from the end surface of the template to release the template from the substrate to be processed. The substrate to be processed has a depression, and can be pulled away from the end face by being deformed to some extent. The uneven pattern of the photocurable resin was transferred onto the substrate to be processed, and the photocurable resin pattern had a uniform film thickness with a photocurable resin height of 50 nm and a remaining film thickness of 15 nm in the field.

  Next, the photocurable resin remaining as a thin residual film on the substrate to be processed is removed by ion etching using oxygen gas, and the photocurable resin pattern having a height of 35 nm is cured on the substrate to be processed. Formed.

Next, using the photo-curable resin pattern as a mask, the quartz glass of the substrate to be processed is dry-etched using CF ₄ gas, and then the photo-curable resin pattern is peeled off to form an uneven transfer pattern by the quartz glass. Got. The pattern of the replica template is a pattern in which the concavo-convex relationship and the left-right relationship are reversed with the pattern of the master template, a plurality of line-and-space patterns having a recess depth of 50 nm, a recess width of 40 nm, and a pitch of 80 nm, and a recess width of 30 nm It has two patterns with a plurality of line and space patterns of 60 nm.

  In the nanoimprint method of this example, the displacement of a region with large misalignment that occurs in the nanoimprint process is measured during nanoimprint outside the nanoimprint region, and the amount of misalignment is reduced by adjusting the pressing force, thereby reducing pattern distortion. This makes it possible to manufacture a replica template with a small amount.

DESCRIPTION OF SYMBOLS 10 Template 11 1st main surface 12 2nd main surface 13 Pattern area | region 14 Step structure 15 Indentation 16 Bottom surface 17 Substrate 18 Photocurable resin layer 19 Pressing force 20 Substrate 21 in which the transfer pattern was formed Measuring instrument 22 Back pressure
23 light (ultraviolet light)
24 cured photocurable resin layer 25 cured photocurable resin pattern 26 uneven transfer pattern 30 processed substrate 31 first main surface 32 second main surface 33 pattern region 34 step structure 35 depression 36 bottom surface 37 photocuring Resin layer 38 template (master template)
39 Concavity and convexity pattern 40 Substrate with transfer pattern formed (replica template)
41 Measuring instrument 42 Pressing force 43 Light (ultraviolet light)
44 cured photocurable resin layer 45 cured photocurable resin pattern 46 uneven transfer pattern 51 template 52 processed substrate 53 near boundary of nanoimprint region (stepped structure region) 54 stepped structure 55 imprinted region 56 stepped structure boundary 57 Interval (Gap)
61 Pattern Forming Device 62 Transfer Substrate 63 Stage 64 Template 65 Template Chuck 66 Polymer Material 67 Actuator System

Claims (7)

A photo-curable resin layer is formed on a substrate to be processed, a light-transmitting template provided with a concavo-convex pattern is pressed against the photo-curable resin layer, and light is irradiated through the template to form the photo-curable resin layer. The mold is released from the cured photocurable resin layer, the cured photocurable resin layer is formed on the substrate to be processed, and the cured photocurable resin layer and the processed material are formed. A nanoimprint method for etching a substrate to form an uneven transfer pattern on the substrate to be processed,
The template has a first main surface and a second main surface, the first main surface has a convex step structure higher than the surroundings, and the uneven pattern is provided on the step structure. A pattern region is formed, the second main surface opposite to the first main surface overlaps with the pattern region of the first main surface, and more than the pattern region of the first main surface. With a large indentation,
When pressing the template against the photocurable resin layer,
In at least two locations outside the step structure region of the template with the recess, measure the inclination of the template or the distance between the template and the substrate to be processed, and adjust the pressing force, A nanoimprint method characterized by reducing an amount of positional deviation from a design value of the transfer pattern. A photo-curable resin layer is formed on a substrate to be processed, a light-transmitting template provided with a concavo-convex pattern is pressed against the photo-curable resin layer, and light is irradiated through the template to form the photo-curable resin layer. The mold is released from the cured photocurable resin layer, the cured photocurable resin layer is formed on the substrate to be processed, and the cured photocurable resin layer and the processed material are formed. A nanoimprint method for etching a substrate to form an uneven transfer pattern on the substrate to be processed,
The template is a template in which a pattern region provided with the concavo-convex pattern is formed on a light-transmitting substrate in a parallel plane, and does not have a step structure and a depression,
The substrate to be processed has a first main surface and a second main surface, and the first main surface has a convex step structure higher than the surrounding as a pattern region for forming the transfer pattern. The second main surface facing the first main surface overlaps with the pattern region of the first main surface, and has a depression having a larger area than the pattern region of the first main surface,
When pressing the template against the photocurable resin layer,
The at least two or more places outside the step structure region of the region having the depression of the substrate to be processed are measured the inclination of the substrate to be processed or the distance between the template and the substrate to be processed, and the pressing force is measured. A nanoimprint method characterized by adjusting to reduce a positional deviation amount from a design value of the transfer pattern.   3. The nanoimprint according to claim 1, wherein a laser microscope or an autocollimator is used to measure an inclination of the template or the substrate to be processed or an interval between the template and the substrate to be processed. Method.   The nanoimprint according to any one of claims 1 to 3, wherein the pressing force of the template in the boundary region of the step structure is locally controlled to adjust the pressing force. Method.   5. The nanoimprint method according to claim 1, wherein the pressing force is adjusted by controlling a pressure in the recess of the template or the substrate to be processed. 6.   The nanoimprint method according to any one of claims 1 to 5, wherein the template is a quartz glass substrate.   A nanoimprint apparatus using the nanoimprint method according to any one of claims 1 to 6.

Images