JP2013207194A - Component built-in substrate and mounting structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a component built-in substrate which meets a demand for improving electric reliability.SOLUTION: A component built-in substrate 3 of this invention includes: a first substrate 8 where a through hole T is formed in a thickness direction (Z direction); a metal plate 7 disposed on one main surface of the first substrate 8 so as to cover one opening of the through hole T; a second substrate 9 disposed on the other main surface of the first substrate 8 so as to cover the other opening of the through hole T; and an electronic component 6 housed in the through hole T and disposed on the main surface of the metal plate 7. The first substrate 8 includes a first inorganic insulation layer 11 and a first resin layer 10 laminated on the first inorganic insulation layer 11. A thermal expansion coefficient of the metal plate 7 is larger than a thermal expansion coefficient of the first inorganic insulation layer 11 and is smaller than a thermal expansion coefficient of the first resin layer 10. This structure allows heat of the electronic component 6 to be emitted by the metal plate 7 and thus inhibits failures from occurring in the electronic component 6.

Description

  The present invention relates to a component-embedded substrate used for electronic devices (for example, various audiovisual devices, home appliances, communication devices, computer devices and peripheral devices thereof), and a mounting structure in which mounting components are mounted on the component-embedded substrate. It is about.

  2. Description of the Related Art Conventionally, a component built-in substrate in which an electronic component such as a semiconductor element is accommodated in a wiring substrate is known.

  In this component built-in substrate, for example, as disclosed in Patent Document 1, an electronic component is accommodated in an insulating layer made of a resin material.

  By the way, with the increase in functionality of electronic components used in electronic devices, the amount of heat generated by the electronic components is increasing. When such an electronic component is incorporated in the component-embedded substrate, heat accumulates in the component-embedded substrate if the heat generated by the electronic component cannot be released well to the outside. As a result, when the electronic component is operated, the temperature inside the component-embedded substrate becomes high, so that the built-in electronic component does not operate normally, and the reliability of the component-embedded substrate is lowered.

JP 2002-261449 A

  An object of the present invention is to provide a component-embedded substrate that can well release heat generated by a built-in electronic component and can meet the demand for improving reliability.

  A component-embedded substrate according to an embodiment of the present invention includes a first substrate in which a through hole T is formed in a thickness direction (Z direction), and one of the through holes T on one main surface of the first substrate. A metal plate disposed to cover the opening, a second substrate disposed to cover the other opening of the through hole T on the other main surface of the first substrate, and the through hole T. An electronic component disposed on a main surface of the metal plate, and the first substrate includes a first inorganic insulating layer and a first resin layer laminated on the first inorganic insulating layer, The thermal expansion coefficient of the metal plate is larger than the thermal expansion coefficient of the first inorganic insulating layer and smaller than the thermal expansion coefficient of the first resin layer.

  According to the component-embedded substrate according to the embodiment of the present invention, since the built-in electronic component is arranged on the main surface of the metal plate, the heat generated by the electronic component can be released well.

Furthermore, the 1st board | substrate distribute | arranged on one main surface of the metal plate contains the 1st inorganic insulating layer and the 1st resin layer laminated | stacked on this 1st inorganic insulating layer, The thermal expansion coefficient of a metal plate Is larger than the thermal expansion coefficient of the first inorganic insulating layer and smaller than the thermal expansion coefficient of the first resin layer. As a result, the difference between the thermal expansion coefficient of the first substrate including the first inorganic insulating layer and the first resin layer and the thermal expansion coefficient of the metal plate is reduced, and the amount of thermal expansion between the first substrate and the metal plate is reduced. Due to the difference, the thermal stress concentrated on the interface between the first substrate and the metal plate can be reduced, and the first substrate can be prevented from peeling from the metal plate.

FIG. 1 is a cross-sectional view taken along the thickness direction (Z direction) showing an example of a mounting structure according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along the thickness direction (Z direction) showing the R1 portion of FIG. 1 in an enlarged manner. FIG. 3 is a cross-sectional view taken along the thickness direction (Z direction) showing the R4 portion of FIG. 2 in an enlarged manner. FIG. 4 is a cross-sectional view taken along the thickness direction (Z direction) showing an enlarged R2 portion of FIG. FIG. 5 is a cross-sectional view taken along the thickness direction (Z direction) showing the R3 portion of FIG. 1 in an enlarged manner. FIG. 6 is a cross-sectional view taken along the thickness direction (Z direction), showing the R5 portion of FIG. 5 in an enlarged manner. 7A to 7D are cross-sectional views taken in the thickness direction (Z direction) for explaining the manufacturing process of the mounting structure shown in FIG. FIGS. 8A to 8C are cross-sectional views taken in the thickness direction (Z direction) for explaining the manufacturing process of the mounting structure shown in FIG. FIG. 9 is a cross-sectional view taken along the thickness direction (Z direction) for explaining the manufacturing process of the mounting structure shown in FIG. FIG. 10 is a cross-sectional view taken in the thickness direction (Z direction) showing an example of an embodiment of the component-embedded substrate of the present invention different from FIG.

<First Embodiment>
(Mounting structure)
Hereinafter, a mounting structure including a component built-in substrate according to the first embodiment of the present invention will be described in detail with reference to the drawings.

  The mounting structure 1 shown in FIG. 1 is used for electronic devices such as various audiovisual devices, home appliances, communication devices, computer devices or peripheral devices thereof. The mounting structure 1 includes a mounting component 2, a component built-in substrate 3 on which the mounting component 2 is mounted on one main surface, and first bumps 4 arranged around the mounting component 2. The implementation structure 1 is mounted on an external circuit board (not shown) via the first bumps 4.

(Mounting parts)
The mounting component 2 is, for example, a semiconductor element such as an IC or LSI, and is flip-chip mounted on the component-embedded substrate 3 via the second bump 5 containing a conductive material such as solder. The mounting component 2 is made of a semiconductor material such as silicon, germanium, gallium arsenide, gallium arsenide phosphorus, gallium nitride, or silicon carbide.

  The thickness of the mounting component 2 is set to 0.05 mm or more and 1 mm or less, for example. In addition, the thickness of the mounting component 2 is observed with a scanning electron microscope or a transmission electron microscope, and the length along the thickness direction (Z direction) is measured at 10 or more locations by exposing the cross-section exposed by polishing of the mounting component 2. It is measured by calculating the average value. Hereinafter, the thickness of each member is measured in the same manner as the thickness of the mounting component 2.

(Component built-in board)
The component-embedded substrate 3 includes an electronic component 6, a metal plate 7 on which the electronic component 6 is disposed on one main surface,
A through hole T in which the electronic component 6 is accommodated is formed, and a first substrate 8 disposed on the main surface of the metal plate 7 on which the electronic component 6 is located, and a main substrate on the opposite side of the first substrate 8 from the metal plate. And a second substrate 9 disposed on the surface so as to cover one opening of the through hole T.

  The thickness of the component built-in substrate 3 is set to 0.05 mm or more and 1.5 mm or less, for example.

(Electronic parts)
The electronic component 6 is, for example, a semiconductor element such as an LSI or a power device having the external electrode 10. The electronic component 6 is arranged on the main surface of the metal plate 7 as shown in FIG. Is electrically connected to the second substrate 9 via The electronic component 6 is formed of a semiconductor material such as silicon, germanium, gallium arsenide, gallium arsenide phosphorus, gallium nitride, or silicon carbide.

The thickness of the electronic component 6 is set to, for example, 0.05 mm or more and 0.4 mm or less. The Young's modulus of the electronic component 6 is set to, for example, 50 GPa or more and 300 GPa or less. And the thermal expansion coefficient to the plane direction (XY plane direction) of the electronic component 6 is set to 2 ppm / degrees C or more and 8 ppm / degrees C or less, for example.

  In addition, the Young's modulus of the electronic component 6 is measured by a measuring method according to ISO 527-1: 1993 using a nanoindenter. Moreover, the thermal expansion coefficient of the electronic component 6 is measured by a measuring method according to JIS K7197-1991 using a commercially available TMA (thermomechanical analysis) apparatus. Hereinafter, unless otherwise specified, the Young's modulus and thermal expansion coefficient of each member are measured in the same manner as the Young's modulus and thermal expansion coefficient of the electronic component 6.

(Metal plate)
The metal plate 7 has an electronic component 6 located on one main surface thereof, and releases heat generated by the electronic component 6 to the outside of the component-embedded substrate 3. The metal plate 7 is made of, for example, copper, aluminum, iron, nickel, cobalt, or an alloy thereof, and it is desirable to use copper having high thermal conductivity from the viewpoint of heat dissipation efficiency.

  The thickness of the metal plate 7 is set to 0.05 mm or more and 2 mm or less, for example. The Young's modulus of the metal plate 7 is set to, for example, 50 GPa or more and 200 GPa or less. The coefficient of thermal expansion in the plane direction (XY plane direction) of the metal plate 7 is set to, for example, 1 ppm / ° C. or more and 20 ppm / ° C. or less. And the heat conductivity of the metal plate 7 is set to 50 W / m * K or more and 430 W / m * K or less, for example.

  The Young's modulus of the metal plate 7 per unit cross-sectional area obtained by, for example, cutting a rectangular test piece from the metal plate 7 using a dicing machine, a knife, or a saw and measuring the test piece with a tensile tester. Can be measured by dividing the tensile stress of the resin by the amount of elongation of the resin. Further, the thermal conductivity of the metal plate 7 is measured by, for example, a laser flash method by a measuring method according to JIS C2141-1992. Hereinafter, the thermal conductivity of each member is measured in the same manner as the thermal conductivity of the metal plate 7.

(First substrate)
The first substrate 8 has a through hole T penetrating in the thickness direction (Z direction), and is disposed on the main surface of the metal plate 7 so that the electronic component 6 is accommodated in the through hole T. Yes. The first substrate 8 includes a first resin layer 11, a first inorganic insulating layer 12 laminated on the first resin layer 11, and a resin portion 13 filled in the through hole T so as to embed the electronic component 6. including.

The thickness of the first substrate 8 is set to 20 μm or more and 100 μm or less, for example. The Young's modulus of the first substrate 8 is set to, for example, 20 GPa or more and 45 GPa or less, and the coefficient of thermal expansion in the plane direction (XY plane direction) is set to, for example, 13 ppm / ° C. or more and 19 ppm / ° C. or less. . The Young's modulus of the first substrate 8 is measured in the same manner as the Young's modulus of the metal plate 7.

(First resin layer)
The first resin layer 11 is a main part of the first substrate 8 and is disposed on the main surface of the metal plate 7. The first resin layer 11 includes, for example, a resin material such as an epoxy resin, a bilmaleimide triazine resin, or a cyanate resin as a main component, and includes filler particles 14.

  The thickness of the first resin layer 11 is set to 3 μm or more and 20 μm or less, for example. Moreover, the Young's modulus of the 1st resin layer 11 is set to 1 GPa or more and 10 GPa or less, for example. The coefficient of thermal expansion of the first resin layer 11 in the thickness direction (Z direction) and the plane direction (XY plane direction) is set to, for example, 20 ppm / ° C. or more and 70 ppm / ° C. or less. The thermal conductivity of the first resin layer 11 is set to, for example, 0.1 W / m · K to 1.5 W / m · K.

  Moreover, the content rate of the filler particle 14 in the 1st resin layer 11 is 10 volume% or more and 70 volume% or less, for example.

  The filler particles 14 are dispersed in the first resin layer 11 and reduce the thermal expansion coefficient of the first resin layer 11 and improve the Young's modulus of the first resin layer 11. The filler particles are made of, for example, an inorganic insulating material such as silicon oxide, aluminum oxide, aluminum nitride, aluminum hydroxide, or calcium carbonate.

  The average particle diameter of the filler particles 14 is set to, for example, 0.3 μm or more and 5.0 μm or less. The Young's modulus of the filler particles 14 is set to 40 GPa or more and 90 GPa or less, for example. And the thermal expansion coefficient of the filler particle 14 is set, for example to 0 ppm / degrees C or more and 15 ppm / degrees C or less.

  The filler particles 14 are confirmed by observing a cross section exposed by polishing the first resin layer 11 with a scanning electron microscope or a transmission electron microscope. The average particle diameter of the filler particles 14 is obtained by observing the cross section of the first resin layer 11 with a scanning electron microscope or a transmission electron microscope, and photographing an enlarged cross section so as to include 20 or more and 50 or less particles. Measured by measuring the maximum diameter of each particle in this enlarged cross section and averaging it. Hereinafter, the average particle diameter of each member is measured in the same manner as the filler particles 14.

(First inorganic insulating layer)
The first inorganic insulating layer 12 becomes the main part of the first substrate 8 together with the first resin layer 11, and is disposed on the main surface of the first resin layer 11 opposite to the metal plate 7.

  The thickness of the first inorganic insulating layer 12 is set to 3 μm or more and 100 μm or less, for example. The Young's modulus of the first inorganic insulating layer 12 is set to 20 GPa or more and 50 GPa or less, for example. The coefficient of thermal expansion of the first inorganic insulating layer 12 in the thickness direction (Z direction) and the plane direction (XY plane direction) is set to, for example, 0.6 ppm / ° C. or more and 10 ppm / ° C. or less. And the heat conductivity of the 1st inorganic insulating layer 12 is set to 0.2 W / m * K or more and 3 W / m * K or less, for example.

Such a first inorganic insulating layer 12 includes a plurality of first inorganic insulating particles 15 made of an inorganic insulating material. Therefore, the coefficient of thermal expansion of the first substrate 8 is set to, for example, 13 ppm / ° C. or more and 19 ppm / ° C. or less. can do.

  That is, since the thermal expansion coefficient of the inorganic insulating material is smaller than that of the resin material, the thermal expansion coefficient of the first inorganic insulating layer 12 is smaller than the thermal expansion coefficient of the first resin layer 11. As a result, the first inorganic insulating layer 12 can reduce the amount of thermal expansion of the first resin layer 11, and consequently the coefficient of thermal expansion of the first substrate 8.

  In addition, since the Young's modulus of the inorganic insulating material is larger than that of the resin material, the Young's modulus of the first inorganic insulating layer 12 is larger than the Young's modulus of the first resin layer 11. As a result, the first inorganic insulating layer 12 can reduce the expansion due to the thermal expansion of the first resin layer 11, the thermal expansion amount of the first resin layer 11 can be further reduced, and thus The coefficient of thermal expansion of the first substrate 8 can be favorably reduced.

  2 and 3, since the plurality of first inorganic insulating particles 15 are connected to each other, the plurality of first inorganic insulating particles 15 are bound to each other. As a result, since the Young's modulus of the first inorganic insulating layer 12 can be further improved as compared with the case where the first inorganic insulating particles 15 are simply dispersed in the first inorganic insulating layer 12, the first inorganic insulating layer The layer 12 can further reduce the amount of thermal expansion of the first resin layer 11, and thus can favorably reduce the coefficient of thermal expansion of the first substrate 8.

  Further, as shown in FIG. 3, the first inorganic insulating layer 12 is surrounded by the plurality of first inorganic insulating particles 15 because the plurality of first inorganic insulating particles 15 are partially connected to each other. A gap G is formed, and a part of the resin material of the first resin layer 11 enters the gap G. As a result, since the adhesive strength between the first inorganic insulating layer 12 and the first resin layer 11 is improved by the anchor effect, and the first resin layer 11 can be prevented from peeling from the first inorganic insulating layer 12, the first inorganic The insulating layer 12 can satisfactorily reduce the amount of thermal expansion of the first resin layer 11, and thus can favorably reduce the coefficient of thermal expansion of the first substrate 8.

  As described above, since the first inorganic insulating layer 12 can reduce the amount of thermal expansion of the first resin layer 11, it can reduce the coefficient of thermal expansion of the first substrate 8, and consequently the metal plate 7 and the first substrate. The difference in the coefficient of thermal expansion from 8 can be reduced, and the first substrate 8 can be prevented from peeling from the metal plate 7.

  The volume ratio of the first inorganic insulating layer particles 15 in the first inorganic insulating layer 12 is set to, for example, 62 volume% or more and 75 volume% or less. The volume ratio of the gap G is set to, for example, 25 volume% or more and 38 volume% or less. And the volume ratio of a part of resin material of the 1st resin layer 11 in the gap | interval G is set to 99.5 volume% or more and 100 volume% or less, for example. The width of the gap G is set to 10 nm or more and 300 nm or less.

  The volume ratio (volume%) of the first inorganic insulating particles 15 is determined by taking a cross-section exposed by polishing the first inorganic insulating layer 12 with a scanning electron microscope or a transmission electron microscope, and analyzing the image from the taken image. The area ratio (area%) of each is measured. Next, the volume ratio is obtained by calculating an average value of the measured values. Hereinafter, the volume ratio of each member is measured in the same manner as the first inorganic insulating layer 12.

  Further, the gap G is confirmed by observing a cross section exposed by polishing the first inorganic insulating layer 12 with a scanning electron microscope or a transmission electron microscope. The width of the gap G is obtained by observing the cross section of the first inorganic insulating layer 12 with a scanning electron microscope or a transmission electron microscope, and shooting a cross section enlarged so as to include the gap G of 20 to 50 in number, The average value of the maximum diameters of the gaps G is obtained by regarding the expanded cross section as the width of the gap G.

  The first inorganic insulating particles 15 are made of, for example, an inorganic insulating material such as silicon oxide, aluminum oxide, magnesium oxide, or calcium oxide. Among these, it is desirable to use silicon oxide. Since silicon oxide has a lower dielectric loss tangent than other inorganic insulating materials, the signal transmission characteristics of the component-embedded substrate 3 can be improved.

  The first inorganic insulating particles 15 are preferably made of an amorphous material. By making the first inorganic insulating particles 15 amorphous, the anisotropy of the coefficient of thermal expansion due to the crystal structure can be reduced, and the occurrence of cracks in the first inorganic insulating layer 12 can be reduced.

  The average particle diameter of the first inorganic insulating particles 15 is set to, for example, 3 nm or more and 110 nm or less. The Young's modulus of the first inorganic insulating particles 15 is set to, for example, 10 GPa or more and 100 GPa or less. And the thermal expansion coefficient of the 1st inorganic insulating particle 15 is set to 0.5 ppm / degrees C or more and 1.5 ppm / degrees C or less, for example.

  The first inorganic insulating layer 12 preferably includes the second inorganic insulating particles 16 having an average particle size larger than that of the first inorganic insulating particles 15. In this case, the first inorganic insulating layer 12 is formed by connecting a plurality of first inorganic insulating particles 15 to each other and the first inorganic insulating particles 15 and the second inorganic insulating particles 16 partially connected to each other. As a result, since the average particle size of the second inorganic insulating particles 16 is larger than the average particle size of the first inorganic insulating particles 15, the Young's modulus of the first inorganic insulating layer 12 can be improved, and the first inorganic insulating particles Generation of cracks in the layer 12 can be reduced.

  The second inorganic insulating particles 16 are made of an inorganic insulating material such as silicon oxide, aluminum oxide, magnesium oxide, or calcium oxide, for example. The second inorganic insulating particles 16 are preferably formed from the same material as the first inorganic insulating particles 15. As a result, the connection between the first inorganic insulating particles 15 and the second inorganic insulating particles 16 becomes strong, and cracks generated in the first inorganic insulating layer 12 can be reduced favorably. The second inorganic insulating particles 16 are preferably made of an amorphous material. As a result, the generation of cracks in the first inorganic insulating layer 12 due to the crystal structure of the second inorganic insulating particles 16 can be reduced.

  The average particle diameter of the second inorganic insulating particles 16 is set to, for example, 0.5 μm or more and 5 μm or less, and the Young's modulus and the thermal expansion coefficient of the second inorganic insulating particles 16 are set similarly to the first inorganic insulating particles 15. Has been.

  When the first inorganic insulating layer 12 includes the second inorganic insulating particles 16, the volume ratio of the first inorganic insulating layer 15 and the second inorganic insulating particles 16 in the first inorganic insulating layer 12 is For example, it is set to 62 volume% or more and 75 volume% or less, and the volume ratio of the first inorganic insulating particles 15 is set to, for example, 20 volume% or more and 90 volume% or less. The volume ratio is set to 10 volume% or more and 80 volume% or less.

(Resin part)
The resin portion 13 is filled in the through hole T of the first substrate 8 and fixes the electronic component 6. The resin portion 13 is made of, for example, a resin material such as an epoxy resin, a bilmaleimide triazine resin, or a cyanate resin, and includes filler particles 14.

  The Young's modulus of the resin portion 13 is set to, for example, 1 GPa or more and 10 GPa or less. The coefficient of thermal expansion in the thickness direction (Z direction) and the plane direction (XY plane direction) of the resin portion 13 is set to, for example, 20 ppm / ° C. or more and 70 ppm / ° C. or less. And the heat conductivity of the resin part 13 is set to 0.1 W / m * K or more and 1.5 W / m * K or less, for example.

(Second board)
The second substrate 9 covers one opening of the through hole T formed in the first substrate 8. The second substrate 9 includes a plurality of second insulating layers 17, a conductive layer 18 partially disposed on the main surface of the second insulating layer 17, and a conductive layer disposed away in the thickness direction (Z direction). And via conductors 19 that electrically connect layer 18. The thickness of the second substrate 9 is set to 20 μm or more and 100 μm or less, for example.

(Second insulation layer)
The second insulating layer 17 is a main part of the second substrate 9, and includes a second resin layer 20 and a second inorganic insulating layer 21 laminated on the main surface of the second resin layer 20. .

  The thickness of the second insulating layer 17 is set to, for example, 20 μm or more and 100 μm or less. The Young's modulus of the second insulating layer 17 is set to 20 GPa or more and 45 GPa or less, for example. And the thermal expansion coefficient to the plane direction (XY plane direction) of the 2nd insulating layer 17 is set to 13 ppm / degrees C or more and 19 ppm / degrees C or less, for example.

  The second resin layer 20 is disposed on the main surface of the first substrate 8 so as to cover the through hole T of the first substrate 8, and becomes a main part of the second insulating layer 17. The configuration of the second resin layer 20 is the same as that of the first resin layer 11.

  The second inorganic insulating layer 21 is laminated on the main surface of the second resin layer 20 opposite to the first substrate 8 and constitutes the main part of the second insulating layer 17 together with the second resin layer 20. is there. The second inorganic insulating layer 21 has the same configuration as that of the first inorganic insulating layer 12, that is, a part of the resin material of the second resin layer 20 enters the gap G of the second inorganic insulating layer 21. It is out.

(Conductive layer)
The conductive layer 18 is made of a conductive material such as copper, silver, gold, or aluminum, for example.

  The thickness of the conductive layer 18 is set to 3 μm or more and 20 μm or less, for example. The Young's modulus of the conductive layer 18 is set to, for example, 50 GPa or more and 200 GPa or less. And the thermal expansion coefficient to the plane direction (XY plane direction) of the conductive layer 18 is set to 16 ppm / degrees C or more and 18 ppm / degrees C or less, for example.

(Via conductor)
The via conductor 19 is for electrically connecting the conductive layers 18 arranged apart in the thickness direction (Z direction) or the external electrode 10 of the electronic component 6 and the conductive layer 18, for example, copper, It is made of a conductive material such as silver, gold or aluminum.

  The Young's modulus of the via conductor 19 is set to, for example, 50 GPa or more and 200 GPa or less. The thermal expansion coefficient of the via conductor 19 in the thickness direction (Z direction) and the plane direction (XY plane direction) is set to, for example, 16 ppm / ° C. or more and 18 ppm / ° C. or less.

  Incidentally, as described above, the first substrate 8 and the second substrate 9 arranged on one main surface of the metal plate 7 have the first resin layer 11 and the second resin having a higher thermal expansion coefficient than the metal plate 7. The layer 20 and the 1st inorganic insulating layer 12 and the 2nd inorganic insulating layer 21 whose coefficient of thermal expansion is smaller than the metal plate 7 are included. As a result, the difference between the coefficient of thermal expansion in the plane direction (XY plane direction) of the first substrate 8 and the second substrate 9 and the coefficient of thermal expansion in the plane direction (XY plane direction) of the metal plate 7 is reduced. The difference between the thermal expansion amount in the plane direction (XY plane direction) of the first substrate 8 and the second substrate 9 and the thermal expansion amount in the plane direction (XY plane direction) of the metal plate 7 becomes small, and the component built-in substrate 3 warpage can be reduced.

  Further, as described above, since the warpage of the component built-in substrate 3 can be reduced, the first substrate 8 and the second substrate 9 can be laminated only on one main surface of the metal plate 7. As a result, since the component-embedded substrate 3 can expose one main surface of the metal plate 7, there is a remarkable effect that the heat of the electronic component 6 can be favorably released from the exposed surface.

  In addition, the difference in thermal expansion coefficient in the plane direction (XY plane direction) between the first substrate 8 and the second substrate 9 and the metal plate 7 is preferably ± 3 ppm / ° C. As a result, even if the first substrate 8 and the second substrate 9 are disposed only on one main surface of the metal plate 7, the warpage of the component-embedded substrate 3 can be satisfactorily reduced.

  Further, as described above, in the first substrate 8, the first resin layer 11 is disposed on the main surface of the metal plate 7, and the first inorganic insulating layer 12 includes the metal plate 7 of the first resin layer 11. It is desirable to be arranged on the opposite main surface. As a result, since the Young's modulus of the first resin layer 11 is smaller than the Young's modulus of the metal plate 7 and the first inorganic insulating layer 12, the first resin layer 11 is formed between the metal plate 7 and the first inorganic insulating layer 12. It functions as a buffer member for both by being disposed between the first substrate 8 and the metal plate 7 as compared with the case where the first inorganic insulating layer 12 is directly disposed on the main surface of the metal plate 7. Adhesive strength can be improved and peeling of the first substrate 8 from the metal plate 7 can be suppressed.

  The thickness of the electronic component 6 accommodated in the through hole T is preferably larger than the thickness of the first substrate 8. As a result, the distance between the external electrode 10 of the electronic component 6 and the conductive layer 20 of the second substrate 9 is reduced, and the thickness direction (Z direction) of the second resin layer 20 positioned between the external electrode 10 and the conductive layer 20 is reduced. ) And the reliability of connection between the external electrode 10 and the conductive layer 20 can be improved.

  The Young's modulus of the first inorganic insulating layer 12 is larger than the Young's modulus of the resin portion 13. As a result, the first inorganic insulating layer 12 can satisfactorily reduce the amount of thermal expansion in the planar direction (XY planar direction) of the resin portion 13 and favorably suppress the warpage of the component-embedded substrate 3. Can do.

  In the first substrate 8, the first inorganic insulating layer 12 is preferably included in the first substrate 8 so as to be located at the interface between the first substrate 8 and the second substrate 9. As a result, since the first inorganic insulating layer 12 has a higher Young's modulus than the first resin layer 11, compared to the case where the first resin layer 11 is located at the interface between the first substrate 8 and the second substrate 9, The thermal expansion of the resin part 13 in the plane direction (XY plane direction) can be reduced, and the warpage of the component-embedded substrate 3 can be reduced.

  Further, it is desirable that the resin portion 13 is formed so that a part of the second resin layer 20 of the second substrate 9 enters. As a result, since the contact area between the first substrate 8 and the second resin layer 20 is increased, the adhesive strength between the first substrate 8 and the second resin layer 20 can be improved. Peeling from the first substrate 8 can be suppressed.

  The resin portion 13 is in contact with the end surface of the first inorganic insulating layer 12 exposed at the inner wall of the through hole T. As a result, the amount of thermal expansion in the thickness direction (Z direction) of the resin portion 13 can be reduced, the flatness of the mounting surface of the mounting component 2 in the component-embedded substrate 3 is improved, and the component-embedded substrate 3 and the mounted component are improved. 2 connection reliability can be improved.

  Moreover, as shown in FIG. 6, the end surface of the 1st inorganic insulating layer 12 exposed to the inner wall of the through-hole T has the several 1st convex part C1 from which the 1st inorganic insulating particle 21 protrudes. Is desirable. As a result, the resin portion 13 is positioned so as to cover the first convex portion, and the adhesive strength between the resin portion 13 and the inner wall of the through hole T can be improved by the anchor effect.

  Moreover, as shown in FIG. 5, the end surface of the 1st inorganic insulating layer 12 exposed to the inner wall of the through-hole T has the several 2nd convex part C2 from which the 2nd inorganic insulating particle 16 protrudes. Is desirable. As a result, the resin portion 13 is positioned so as to cover the second convex portion, and the adhesive strength between the resin portion 13 and the inner wall of the through hole T can be improved by the anchor effect.

  Moreover, as shown in FIG. 5, it is desirable that the end surface of the first resin layer 11 exposed on the inner wall of the through hole T has a plurality of third convex portions C3 from which the filler particles 14 protrude. As a result, the resin portion 13 is positioned so as to cover the third convex portion, and the adhesive strength between the resin portion 13 and the inner wall of the through hole T can be improved by the anchor effect.

  Further, as described above, the first resin layer 11 includes filler particles 14. As a result, since the coefficient of thermal expansion in the planar direction (XY plane direction) of the first resin layer 11 can be reduced, the thermal expansion in the plane direction (XY plane direction) of the first resin layer 11 and the thickness direction of the resin portion 13 are achieved. The thermal stress concentrated on the corners of the first inorganic insulating layer 12 due to the thermal expansion in the (Z direction) can be reduced, and cracks in the first inorganic insulating layer 12 are generated. It is possible to favorably reduce the occurrence of cracks in 8.

  Further, it is desirable that many filler particles 14 included in the first resin layer 11 are located on the first inorganic insulating layer 12 side of the first resin layer 11. As a result, since the coefficient of thermal expansion of the first resin layer 11 on the first inorganic insulating layer 12 side can be reduced, the first resin layer 11 and the first resin layer 11 formed between the first resin layer 11 and the first inorganic insulating layer 12 can be reduced. The thermal stress resulting from the difference in coefficient of thermal expansion with the first inorganic insulating layer 12 can be reduced, and the first resin layer 11 can be prevented from peeling from the first inorganic insulating layer 12.

  In addition, when the 1st resin layer 11 is divided into two so that thickness may become equal, the one near the 1st inorganic insulating layer 12 is made into the 1st field, and the one far from the 1st inorganic insulating layer 12 is made into the 2nd field Furthermore, for example, 55% to 70% of the filler particles 14 are located in the first region, and for example, 30% to 45% of the filler particles 14 are located in the second region.

  Further, in a cross-sectional view, the corner portion located between the main surface of the first substrate 8 opposite to the metal plate 8 and the inner wall surface of the through hole T is particularly the first inorganic insulating layer 12 of the first substrate 8. When is arranged, it is desirable that the surface is a curved surface. As a result, the stress concentrated on the corner located between the main surface of the first substrate 8 opposite to the metal plate 8 and the inner wall surface of the through hole T can be reduced. The occurrence of cracks can be reduced satisfactorily.

  In addition, the corner portion located between the main surface of the first substrate 8 opposite to the metal plate 8 and the inner wall surface of the through hole T in a cross-sectional view has a radius of curvature of, for example, 3 μm or more and 15 μm or less. Yes.

  Further, in a plan view, it is desirable that the corner of the opening of the through hole T of the first substrate 8 is a curved surface. As a result, the stress concentrated on the corner of the opening of the through hole T can be reduced, and as a result, the occurrence of cracks in the first substrate 8 can be reduced satisfactorily.

  Note that, in a plan view, the corner of the opening of the through hole T of the first substrate 8 has a radius of curvature of, for example, 3 μm or more and 100 μm or less.

  In addition, it is desirable that the metal plate 7 is formed with a recess in which a part of the electronic component 6 is accommodated. As a result, when the heat generated by the electronic component 6 is transmitted through the metal plate 7 and released into the atmosphere, the distance that the heat of the electronic component 6 is transmitted through the metal plate 7 is shortened, and the heat dissipation of the component built-in substrate 3 is reduced. Efficiency can be improved.

  As shown in FIG. 1, the external electrode 10 of the electronic component 6 is preferably connected directly to the via conductor 19. As a result, it is not necessary to provide a pad portion interposed between the electronic component 6 and the via conductor 19 at the connection portion between the external electrode 10 and the via conductor 19, and the component-embedded substrate 3 can be formed thin.

  Further, as shown in FIG. 1, the via conductor 19 is formed so as to penetrate the second insulating layer 17. As a result, since the second resin layer 20 having a higher thermal expansion coefficient than the via conductor 19 and the second inorganic insulating layer 21 having a lower thermal expansion coefficient than the via conductor 19 are penetrated, the thickness direction (Z direction) ), The difference in thermal expansion coefficient between the second inorganic insulating layer 21 and the second resin layer 20 and the via conductor 19 can be reduced, and the via conductor 19 and the electronic component 6 can be satisfactorily prevented from peeling off. .

  As shown in FIG. 1, the via conductor 19 desirably has a width at one end located on the electronic component 6 side larger than a width at the other end located on the conductive layer 18 side. As a result, the distance between the conductive layers 18 adjacent to each other in the plane direction (XY plane direction) can be narrowed and the conductive layers 18 can be arranged with high density, and the contact area between the electronic component 6 and the via conductor 19 can be reduced. It becomes large and it can suppress favorably that the electronic component 6 and the via conductor 19 peel.

  Further, as shown in FIG. 4, the connection surface between the external electrode 10 and the via conductor 19 of the electronic component 6 is preferably a curved surface. As a result, since the contact area between the external electrode 10 and the via conductor 19 is increased, the adhesive strength between the external electrode 10 and the via conductor 19 can be improved.

(Production of mounting structure)
Next, a method for manufacturing the mounting structure 1 described above will be described with reference to FIGS.

(Production of first laminated sheet)
(1) A first inorganic insulating sol having a solid content including the first inorganic insulating particles 15 and the second inorganic insulating particles 16 and a solvent in which the solid content is dispersed is prepared.

  The first inorganic insulating sol includes, for example, a solid content of 10% to 50% by volume and a solvent of 50% to 90% by volume. Production of an insulating layer formed from the first inorganic insulating sol by keeping the viscosity of the first inorganic insulating sol low by setting the solid content to 10% by volume or more and making the solid content 50% by volume or less. Sex can be maintained high.

  The solid content of the first inorganic insulating sol includes, for example, 20% by volume or more and 90% by volume or less of the first inorganic insulating particles 15 and 10% by volume or more and 80% by volume or less of the second inorganic insulating particles 16. Thereby, generation | occurrence | production of the crack in the 1st inorganic insulating layer 12 can be effectively reduced in the process of (3) mentioned later.

  In addition, the 1st inorganic insulating particle 15 can be produced by refine | purifying silicate compounds, such as sodium silicate aqueous solution (water glass), and depositing a silicon oxide chemically, for example. In this case, since the first inorganic insulating particles 15 can be produced under low temperature conditions, the first inorganic insulating particles 15 in an amorphous state can be produced.

  On the other hand, if the second inorganic insulating particles 16 are made of silicon oxide, for example, a solution obtained by purifying a silicate compound such as a sodium silicate aqueous solution (water glass) and chemically depositing the silicon oxide is used as a flame. It can be produced by spraying in and heating to 800 ° C. or higher and 1500 ° C. or lower while reducing the formation of aggregates.

Moreover, it is desirable that the heating time for producing the second inorganic insulating particles 16 is set to 1 second or more and 180 seconds or less. As a result, by shortening the heating time, crystallization of the second inorganic insulating particles 16 can be reduced and the amorphous state can be maintained even when heated to 800 ° C. or higher and 1500 ° C. or lower.

  On the other hand, the solvent contained in the first inorganic insulating sol is, for example, methanol, isopropanol, n-butanol, ethylene glycol, ethylene glycol monopropyl ether, methyl ethyl ketone, methyl isobutyl ketone, xylene, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate. An organic solvent containing dimethylacetamide and / or a mixture of two or more selected from dimethylacetamide can be used.

  (2) A support sheet 23 made of a resin material or a metal material is prepared, and the first inorganic insulating sol is applied to one main surface of the support sheet 23.

  The application of the first inorganic insulating sol can be performed using, for example, a dispenser, a bar coater, a die coater, or screen printing. At this time, as described above, since the solid content of the first inorganic insulating sol is set to 50% by volume or less, the viscosity of the first inorganic insulating sol is set low and the applied first inorganic insulating sol is flat. Sexuality can be increased.

  (3) The first inorganic insulating sol is dried to evaporate the solvent.

  Here, the first inorganic insulating sol contracts as the solvent evaporates. The solvent is contained in the gap G surrounded by the first inorganic insulating particles 15 and the second inorganic insulating particles 16, and the first The inorganic insulating particles 15 and the second inorganic insulating particles 16 themselves are not included. For this reason, if the first inorganic insulating sol contains the second inorganic insulating particles 16 having a large average particle diameter, the gap G is reduced accordingly, and the region filled with the solvent is reduced. When the sol solvent evaporates, the shrinkage amount of the first inorganic insulating sol decreases. That is, the contraction of the first inorganic insulating sol is limited by the second inorganic insulating particles 16. As a result, the generation of cracks due to the shrinkage of the first inorganic insulating sol can be reduced. Even if a crack occurs, the extension of the crack can be prevented by the second inorganic insulating particles 16 having a large average particle diameter.

  The first inorganic insulating sol is dried by, for example, heating and air drying. The drying temperature is set to, for example, 20 ° C. or more and lower than the boiling point of the solvent (the boiling point of the lowest boiling solvent when two or more solvents are mixed), and the drying time is, for example, 20 seconds to 30 minutes. Set to As a result, the boiling of the solvent is reduced, the extrusion of the first inorganic insulating particles 15 and the second inorganic insulating particles 16 due to the pressure of bubbles generated during the boiling is reduced, and the distribution of the particles is made more uniform. Is possible.

  (4) The solid content of the remaining first inorganic insulating sol is heated, and the first inorganic insulating particles 15 and the first inorganic insulating particles 15 and the second inorganic insulating particles 16 are partially connected to each other. The insulating layer 12 is produced.

  Here, the 1st inorganic insulation sol in this embodiment has the 1st inorganic insulation particle 15 by which the average particle diameter was set minutely. As a result, even if the heating temperature of the first inorganic insulating sol is relatively low, for example, below the crystallization start temperature of the first inorganic insulating particles 15 and the second inorganic insulating particles 16, the first inorganic insulating particles 15 Can be firmly connected.

The temperature at which the first inorganic insulating particles 15 can be firmly connected to each other is, for example, about 250 ° C. when the average particle size of the first inorganic insulating particles 15 is set to 110 nm or less. When it is set to 15 nm or less, it is about 150 ° C. The crystallization start temperature of silicon oxide contained in the first inorganic insulating particles 15 and the second inorganic insulating particles 16 is about 1300 ° C.

  The heating temperature of the first inorganic insulating sol is desirably set to be lower than the crystallization start temperature of the first inorganic insulating particles 15 and the second inorganic insulating particles 16. As a result, the crystallized particles can be prevented from shrinking due to the phase transition, and the occurrence of cracks in the first inorganic insulating layer 12 can be reduced.

  Furthermore, by heating at such a low temperature, the first inorganic insulating particles 15 and the second inorganic insulating particles 16 maintain the shape of the particles, while the first inorganic insulating particles 15 and the first inorganic insulating particles 15 and the first inorganic insulating particles 15 2 The inorganic insulating particles 16 can be connected only in the proximity region. As a result, the first inorganic insulating particles 15 and the first inorganic insulating particles 15 and the second inorganic insulating particles 16 can be connected to each other. As a result, the open pore gap G can be easily formed between the first inorganic insulating particles 15. Can be formed.

  In addition, as for the heating of 1st inorganic insulation sol, it is desirable that temperature is set to 100 degreeC or more and less than 300 degreeC, and time is set to 0.5 hours or more and 24 hours or less, for example.

  (5) A first resin precursor 11x including an uncured first resin material and filler particles 14 coated with the first resin material is prepared. Next, as shown in FIG. 7A, the first resin precursor 11x is laminated on the main surface of the first inorganic insulating layer 12 opposite to the support sheet 23, and the support sheet 23, the first inorganic insulating layer 12 and By heating and pressurizing the first resin precursor 11x in the vertical direction, the uncured first resin material enters a part of the gap G of the first inorganic insulating layer 12, and the first inorganic insulating layer 12 and the first The resin precursor 11x is bonded together. In addition, uncured is the state of A-stage or B-stage according to ISO472: 1999.

  Further, the heating and pressurization of the support sheet 23, the first inorganic insulating layer 12 and the first resin precursor 11x is set such that the heating temperature is, for example, 60 ° C. or more and 160 ° C. or less, and the pressure is, for example, 0.1 MPa or more and 2 MPa or less. The heating and pressurizing time is set to, for example, not less than 0.5 hours and not more than 2 hours. The curing start temperature is a temperature at which the resin becomes a C-stage according to ISO 472: 1999.

  Here, the average particle diameter of the filler particles 14 included in the first resin precursor 11x is desirably larger than the width of the gap G. As a result, the uncured first resin material of the first resin precursor 11 x enters the gap G of the first inorganic insulating layer 12, whereby a plurality of filler particles 14 are filtered on the surface of the first inorganic insulating layer 12. Thus, the first resin layer 11 can be formed such that the region closer to the first inorganic insulating layer 12 has a larger content ratio of the filler particles 14 than the region farther from the first inorganic insulating layer 12. Therefore, the first resin layer 11 having a small coefficient of thermal expansion on the first inorganic insulating layer 12 side can be easily produced, and as a result, the production efficiency can be improved.

  For example, the volume ratio of the filler particles 14 in the first resin precursor 11x is set to 10 volume% or more and 55 volume% or less, and one main surface of the first inorganic insulating layer 12 after the formation of the first resin layer 11. The volume ratio of the filler particles 14 in the first resin layer 11 formed above is set to 10% by volume or more and 70% by volume or less.

  As described above, as shown in FIG. 7A, the first laminated sheet 22 including the support sheet 23, the first inorganic insulating layer 12, and the first resin precursor 11x is produced.

(Contains electronic components)
(6) As shown in FIG. 7B, the metal plate 7 is prepared, and the first lamination is performed so that the first resin precursor 11 x of the first lamination sheet 22 is arranged on the main surface of the metal plate 7. The sheet 22 is laminated on the metal plate 7. Next, the first laminated sheet 22 and the metal plate 7 are heated and pressed to cure the first resin precursor 11x, the first resin precursor 11x becomes the first resin layer 11, and the support sheet 23 is peeled off. The first substrate 8 is disposed on the main surface of the metal plate 7.

  The heating and pressing of the first inorganic insulating layer 12, the first resin precursor 11x, and the metal plate 7 are performed at a temperature equal to or higher than the curing start temperature of the first resin precursor 11x and lower than the thermal decomposition temperature of the first resin precursor 11x. Specifically, the temperature is set to, for example, 150 ° C. to 250 ° C., the pressure is set to, for example, 2 MPa to 3 MPa, and the time is set, for example, to 0.5 hours to 2 hours.

  (7) As shown in FIG. 7C, a through hole T in which the electronic component 6 is accommodated is formed in the first substrate 8. The through hole T can be formed by, for example, laser beam irradiation, punching with a mold, or sandblast irradiation.

  Further, after forming the through hole T, brush polishing or the like is performed on the edge of the opening of the through hole T, so that the main surface of the first substrate 8 opposite to the metal plate 8 and the through hole T in the cross-sectional view are formed. A corner located between the inner wall surface and the inner wall surface can be formed as a curved surface.

  Further, when forming the through hole T, the corner of the opening of the through hole T in a plan view can be formed as a curved surface by changing the shape of the mask in laser processing or sand blast processing.

  Further, when the through hole T is formed, the through hole T may be formed so that a recess is formed in the metal plate 7. As a result, it is possible to satisfactorily reduce the occurrence of misalignment when the electronic component 6 is accommodated in the next process.

  (8) As shown in FIG. 7D, the electronic component 6 is accommodated in the through hole T so that the external electrode 10 of the electronic component 6 faces the side opposite to the metal plate 7.

(Formation of conductive layer)
(9) The 2nd lamination sheet 24 containing the 2nd inorganic insulating layer 21 and the 2nd resin precursor 20x is prepared by the same process as process (1) to process (5). Next, as shown in FIG. 8A, after filling the through-hole T with an uncured resin material by a dispenser or the like and curing the resin material to form the resin portion 13, the metal of the first substrate 8 is formed. The second laminated sheet 24 is laminated so as to cover the opening opposite to the layer 8.

  In a later step, when the through hole T is partially filled with the second resin precursor 20x and the resin portion 13 is formed integrally with the second resin layer 20, the second resin precursor 20x The second laminated sheet 24 is laminated on the first substrate 8 so that the second resin precursor 20x of the second laminated sheet 24 is in contact with the first substrate 8 in order to allow a part to enter the through hole T.

  (10) The second resin precursor 20x is cured by heating and pressurizing the metal plate 7, the first substrate 8, and the second laminated sheet 24, as shown in FIG. 20x is defined as the second resin layer 20. Here, the heating and pressing of the metal plate 7, the first substrate 8, and the second laminated sheet 24 are performed in the same manner as in the step (6).

In addition, when forming the resin part 13 integrally with the 2nd resin layer 20, in the heat pressurization of the 2nd lamination sheet 24, it flows by pressurizing the 2nd resin precursor 20x softened by heating. By doing so, a part of the second resin precursor 20x is filled around the electronic component 6 in the through hole T. And the resin part 13 which consists of a part of 2nd resin layer 20 is formed by hardening the 2nd resin precursor 20x with which this through-hole T was filled.

  (11) As shown in FIG. 8C, after peeling off the support sheet 23, the second inorganic insulating layer 21 and the second resin layer 20 are arranged in the thickness direction (Z direction) toward the external electrode 10 of the electronic component 6. And the conductive layer 18 electrically connected to the via conductor 19 and the through-hole conductor 11 is formed on the second insulating layer 17. Specifically, this is performed as follows.

  The via conductor 19 is formed with a via hole V in the second inorganic insulating layer 21 and the second resin layer 20 by, for example, a YAG laser device or a carbon dioxide laser device, and the external electrode 10 of the electronic component 6 is formed at the bottom of the via hole V. Expose at least part of it. Next, the via hole V is formed by burying a conductive material using, for example, electroless plating, vapor deposition, CVD, or sputtering.

  At this time, in the via hole V, the second resin layer 20 has a higher resolution by laser light than the second inorganic insulating layer 21, so that the width of one end portion located on the electronic component 6 side is the conductive layer 18. It is formed larger than the width of the other end located on the side. As a result, the via conductor 19 is also formed so that the width of one end located on the electronic component 6 side is larger than the width of the other end located on the conductive layer 18 side, and the electronic component 6 is displaced from a predetermined position. Even in this case, the connection between the electronic component 6 and the via conductor 19 can be secured satisfactorily.

  After the via conductor 19 is formed, a conductive material is deposited on an arbitrary portion of the second insulating layer by, for example, electroless plating, vapor deposition, CVD, or sputtering. Next, the conductive layer 18 is formed by patterning the deposited conductive material into a desired shape using a photolithography method, etching, or the like.

  As described above, the component-embedded substrate 3 in which the electronic component 6 is embedded is manufactured.

(Mounting of mounting parts)
(10) As shown in FIG. 9, the mounting component 2 is flip-chip mounted on the component-embedded substrate 3 via the second bump 5 on one main surface of the second substrate 9 of the component-embedded substrate 3 described above. Then, the mounting structure 1 can be manufactured by arranging the first bumps 4 for connecting the mounting structure 1 and an external circuit board (not shown) around the mounting component 2.

Second Embodiment
(Mounting structure)
Next, a second example (second embodiment) of the embodiment of the component-embedded substrate and the mounting structure according to the present invention will be described in detail with reference to FIG. In addition, description is abbreviate | omitted regarding the structure similar to 1st Embodiment mentioned above.

  Unlike the first embodiment, the component-embedded substrate 3 of the second embodiment includes a metal layer 25 on the first substrate 8 as shown in FIG. The metal layer 25 is made of a metal material such as copper, silver, gold, or aluminum.

  The thickness of the metal layer 25 is set to 3 μm or more and 20 μm or less, for example. The Young's modulus of the metal layer 25 is set to, for example, 80 GPa or more and 200 GPa or less. And the thermal expansion coefficient to the plane direction (XY plane direction) of the metal layer 25 is set to 16 ppm / degrees C or more and 18 ppm / degrees C or less, for example.

As described above, the first substrate 8 in the present embodiment includes the metal layer 25. As a result, the metal material has a higher thermal conductivity than the inorganic insulating material and the resin material.
Heat dissipation efficiency can be improved, and heat can be prevented from being accumulated in the component-embedded substrate 3.

  Further, as shown in FIG. 10, it is desirable that the end face of the metal layer 25 is exposed on the inner wall of the through hole T. As a result, the heat generated by the electronic component 6 accommodated in the through hole T can be transferred from the exposed surface of the metal layer 25 by transmitting the metal layer 25, and heat accumulates in the first substrate 8, It is possible to suppress the electronic component 6 from causing problems.

  Further, it is desirable that the inner wall of the through hole T has a fourth convex portion (not shown) formed by the end portion of the metal layer 25. As a result, since the end portion of the metal layer 25 approaches the electronic component 6, the heat generated by the electronic component 6 accommodated in the through hole T can be transmitted to the metal layer 25 and released, It is possible to suppress the heat from accumulating on one substrate 8 and causing the electronic component 6 to malfunction.

  The metal layer 25 is preferably made of the same metal material as the metal plate 7. As a result, the difference between the thermal expansion coefficient of the metal layer 25 and the thermal expansion coefficient of the metal plate 7 is small, and the Young's modulus of the metal layer 25 is larger than that of the first resin layer 11 and the first inorganic insulating layer 12. The metal layer 25 functions to bring the coefficient of thermal expansion of the first substrate 8 close to the coefficient of thermal expansion of the metal plate 7, so that the first substrate 8 can be satisfactorily suppressed and reduced from the metal plate 8.

  The area ratio of the metal layer 25 on the main surface of the first resin layer 11 or the first inorganic insulating layer 12 is desirably 60% or more and 100% or less. As a result, the metal layer 25 can satisfactorily bring the thermal expansion coefficient of the first substrate 8 close to the thermal expansion coefficient of the metal plate 8.

  Further, as shown in FIG. 10, the metal layer 25 is disposed on the main surface of the first inorganic insulating layer 12, and the end of the metal layer 25 is above the end of the first inorganic insulating layer 12. It is desirable that As a result, the thermal stress concentrated on the corners of the first inorganic insulating layer 12 is reduced by the thermal expansion of the first resin layer or the second resin layer having a large coefficient of thermal expansion and the resin portion 13, and the first inorganic insulating layer It is possible to satisfactorily reduce the occurrence of cracks in No. 12 and the occurrence of cracks in the first substrate 8.

  When the metal layer 25 is disposed on the main surface of the first inorganic insulating layer 12, the third resin layer 26 is disposed at the interface between the metal layer 25 and the first inorganic insulating layer 12. It is desirable. As a result, even if thermal stress is concentrated on the interface between the metal layer 25 and the first inorganic insulating layer 12 due to the difference in thermal expansion coefficient between the metal layer 25 and the first inorganic insulating layer 12, the third resin layer 26 is It functions as a buffer member, and the metal layer 25 can be prevented from peeling from the first inorganic insulating layer 12.

  The third resin layer 26 is set to have a thickness of, for example, 1 μm to 3 μm and a Young's modulus of, for example, 1 GPa to 10 GPa.

  Moreover, it is desirable that the end surface of the metal layer 25 located on the side opposite to the through hole T is exposed to the atmosphere. As a result, the heat generated by the electronic component 6 accommodated in the through-hole T can be transferred to the metal layer 25 and released into the atmosphere, and the heat is accumulated in the first substrate 8 so that the electronic component can be released. It can suppress that 6 causes a malfunction.

(Production of mounting structure)
Next, the manufacturing method of the mounting structure 1 of the second embodiment described above will be described. In addition, description is abbreviate | omitted regarding the method similar to 1st Embodiment mentioned above.

In the step (2) of the first embodiment described above, the support sheet 23 is made of a metal material, and the third resin precursor, the first inorganic insulating layer 12, and the first sheet are formed on one main surface of the support sheet 23. 1st lamination sheet 22 which laminated 1 resin precursor 11x one by one is produced. Then, in the step (6) of the first embodiment, the support sheet 23 is left without being peeled off, and the first substrate 8 including the metal layer 25 is manufactured using the support sheet 23 as the metal layer 25. When forming the through hole T, a fourth convex portion (not shown) made of the metal layer 25 may be formed on the inner wall of the through hole T by appropriately changing the laser output or the sandblast pressure. it can.

  The present invention is not limited to the embodiments described above, and various modifications, improvements, combinations, and the like can be made without departing from the spirit of the present invention.

  Moreover, although description about the soldering resist layer was abbreviate | omitted in embodiment of this invention mentioned above, the component built-in board | substrate may have the soldering resist layer containing a resin material on the upper and lower surfaces.

  In addition, in the above-described embodiment of the present invention, description of the underfill is omitted, but an underfill may be provided between the component-embedded substrate and the mounted component.

  In the embodiment of the present invention described above, the first resin layer 11 and the second resin layer 20 do not include a base material such as a glass cloth, but may include a base material.

  In the first embodiment of the present invention described above, the through hole T is formed in the first resin layer 11, but the through hole may be formed in the first resin precursor 11x.

  In the first embodiment of the present invention described above, a plurality of through holes T may be formed in the first substrate 8.

  Moreover, although 1st Embodiment of this invention mentioned above illustrated the semiconductor element as the mounting component 2, the mounting component 2 may be a capacitor | condenser.

  In the first embodiment of the present invention described above, the first resin layer 11 and the first inorganic insulating layer 12 are included in the first substrate 8 one by one. However, the first resin layer 11 and the first inorganic insulating layer are included. A plurality of layers 12 may be arranged.

  In the first embodiment of the present invention described above, the first resin layer 11 is disposed on the main surface of the metal plate 7, but the first inorganic insulating layer 12 is disposed on the main surface of the metal plate 7. It does not matter. Furthermore, in that case, the third resin layer 26 may be disposed between the first inorganic insulating layer 12 and the metal plate 7.

  In the first embodiment of the present invention described above, the first resin layer 11, the second resin layer 20, and the resin portion 13 include the filler particles 14, but the filler particles 14 may not be included.

  In the first embodiment of the present invention described above, the electronic component 6 is arranged directly on the main surface of the metal plate 7, but the electronic component 6 is arranged on the metal plate 7 through a heat conductive adhesive member. It doesn't matter.

  In the first embodiment of the present invention described above, the second substrate 9 includes the two second insulating layers 17. However, the second insulating layer 17 may include one layer or three or more layers. I do not care.

  In the first embodiment of the present invention described above, the second insulating layer 17 may include the third resin layer 26.

DESCRIPTION OF SYMBOLS 1 Mounting structure 2 Mounting component 3 Component built-in board 4 1st bump 5 2nd bump 6 Electronic component 7 Metal plate 8 1st board | substrate 9 2nd board | substrate 10 External electrode 11 1st resin layer 11x 1st resin precursor 12 1st Inorganic insulating layer 13 Resin part 14 Filler particle 15 First inorganic insulating particle 16 Second inorganic insulating particle 17 Second insulating layer 18 Conductive layer 19 Via conductor 20 Second resin layer 20x Second resin precursor 21 Second inorganic insulating layer 22 First laminated sheet 23 Support sheet 24 Second laminated sheet 25 Metal layer 26 Third resin layer C1 First convex part C2 Second convex part C3 Third convex part G Gap T Through hole V Via hole

Claims (9)

A first substrate having through holes T formed in the thickness direction;
A metal plate disposed on one main surface of the first substrate so as to cover one opening of the through hole;
A second substrate disposed on the other main surface of the first substrate so as to cover the other opening of the through hole;
An electronic component housed in the through hole and disposed on the main surface of the metal plate,
The first substrate includes a first inorganic insulating layer and a first resin layer laminated on the first inorganic insulating layer,
The component-embedded substrate, wherein a thermal expansion coefficient of the metal plate is larger than a thermal expansion coefficient of the first inorganic insulating layer and smaller than a thermal expansion coefficient of the first resin layer. The component built-in substrate according to claim 1,
Further comprising a resin portion located in the through hole,
The second substrate includes a second inorganic insulating layer;
The component-embedded substrate, wherein the second inorganic insulating layer has a thermal expansion coefficient smaller than that of the resin portion. In the component built-in substrate according to claim 2,
The second substrate includes a second resin layer laminated on the first substrate side of the second inorganic insulating layer,
The component-embedded substrate, wherein the resin portion is a part of the second resin layer that enters the through hole. In the component built-in substrate according to claim 3,
The first substrate further includes a metal layer;
The component-embedded substrate, wherein an end face of the metal layer is exposed on an inner wall of the through hole. In the component built-in substrate according to claim 4,
A component-embedded substrate, wherein an inner wall of the through hole has a convex portion formed of an end portion of the metal layer. The component built-in substrate according to claim 1,
The second substrate includes a second inorganic insulating layer and a second resin layer laminated on the second inorganic insulating layer, and penetrates the second inorganic insulating layer and the second resin layer in a thickness direction, A component-embedded board, further comprising a via conductor electrically connected to the electronic component. The component built-in substrate according to claim 6,
The second resin layer is laminated on the electronic component side of the second inorganic insulating layer,
The component-embedded substrate, wherein the via conductor has a width at one end located on the second resin layer side larger than a width at the other end located on the second inorganic insulating layer side. The component built-in substrate according to claim 1,
The first inorganic insulating layer includes a plurality of first inorganic insulating particles connected at a part of each other, and a gap surrounded by the plurality of first inorganic insulating particles is formed,
A part-embedded board, wherein a part of the first resin layer enters the gap.   A mounting structure comprising: the component built-in substrate according to claim 1; and a mounting component mounted on a main surface opposite to the main surface on which the metal plate of the component built-in substrate is disposed.

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