JP5933989B2 - Component built-in board - Google Patents

Description

  The present invention relates to a component-embedded substrate that incorporates an electronic component such as a semiconductor element.

  2. Description of the Related Art Conventionally, a component-embedded substrate in which an electronic component such as a semiconductor element or a capacitor is accommodated in a wiring substrate is known.

  In this component-embedded substrate, for example, as disclosed in Patent Document 1, an electronic component is disposed and incorporated in a core substrate made of a resin material.

  By the way, in such a component-embedded substrate, the thermal expansion coefficient of the accommodated electronic component is smaller than the thermal expansion coefficient of the core substrate due to the difference in the constituent materials. As a result, when heat is applied to the component-embedded substrate, the thermal expansion amount of the electronic component is small while the thermal expansion amount of the core substrate is large, and the core substrate is likely to warp due to the difference in the thermal expansion amount. As a result, there is a problem that the connection reliability between the core substrate and the accommodated electronic component tends to be lowered.

JP 2002-261449 A

  An object of the present invention is to provide a component-embedded substrate that can meet the demand for improving the connection reliability between a core substrate and an electronic component housed in the core substrate.

Component-embedded substrate according to an embodiment of the present invention, an electronic component, the hole is formed, and tree fat base, wherein the electronic component to the hole portion is accommodated, are arranged on both main surfaces of the resin substrate A pair of inorganic insulating layers, and a first resin layer disposed between the inorganic insulating layer and the resin base and between the inorganic insulating layer and the electronic component ,
The inorganic insulating layer includes a plurality of first inorganic insulating particles connected at a part of each other, and a gap surrounded by the plurality of first inorganic insulating particles is formed,
The first resin layer includes a plurality of first filler particles made of an inorganic insulating material having a particle size larger than the width of the gap,
Content of the first filler particles, in which the first region located on the inorganic insulating layer side of the first resin layer has a size Ikoto than the second region located in the resin substrate side is there.

  According to the component-embedded substrate according to the embodiment of the present invention, a pair of inorganic insulating layers having a smaller coefficient of thermal expansion than the resin substrate are disposed on both main surfaces of the resin substrate in which the electronic component is accommodated. . As a result, the amount of thermal expansion of the resin substrate can be reduced by the inorganic insulating layer.

  Furthermore, the inorganic insulating layer has a Young's modulus greater than that of the resin substrate. As a result, since the inorganic insulating layer can restrain the resin base, deformation due to thermal expansion of the resin base can be reduced. Therefore, the warpage of the core substrate can be reduced, and as a result, the electrical reliability of the component built-in substrate can be improved.

FIG. 1 is a cross-sectional view taken along the thickness direction (Z direction) showing an example of a mounting structure according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along the thickness direction (Z direction) showing the R1 portion of FIG. 1 in an enlarged manner. FIG. 3 is a cross-sectional view taken along the thickness direction (Z direction), showing the R3 portion of FIG. 2 in an enlarged manner. FIG. 4 is a cross-sectional view taken along the thickness direction (Z direction) showing an enlarged R2 portion of FIG. FIGS. 5A to 5D are cross-sectional views taken in the thickness direction (Z direction) for explaining the manufacturing process of the mounting structure shown in FIG. FIGS. 6A and 6B are cross-sectional views taken in the thickness direction (Z direction) for explaining the manufacturing process of the mounting structure shown in FIG. FIG. 7 is a cross-sectional view taken along the thickness direction (Z direction) for explaining the manufacturing process of the mounting structure shown in FIG. FIG. 8 is a cross-sectional view taken in the thickness direction (Z direction) showing an example of an embodiment of the component-embedded substrate of the present invention different from FIG. FIGS. 9A to 9D are cross-sectional views taken in the thickness direction (Z direction) for explaining the manufacturing process of the mounting structure shown in FIG. FIG. 10 is a cross-sectional view taken in the thickness direction (Z direction) showing an example of an embodiment of the component-embedded substrate of the present invention different from FIG.

<First Embodiment>
(Mounting structure 1)
Hereinafter, a mounting structure including a component built-in substrate according to the first embodiment of the present invention will be described in detail with reference to the drawings.

  The mounting structure 1 shown in FIG. 1 is used for electronic devices such as various audiovisual devices, home appliances, communication devices, computer devices or peripheral devices thereof. The mounting structure 1 includes a first electronic component 2 and a component-embedded substrate 3 on which the first electronic component 2 is mounted on one main surface.

(First electronic component 2)
The first electronic component 2 is flip-chip mounted on the component built-in substrate 3 via bumps 4 containing a conductive material such as solder. For the first electronic component 2, for example, a semiconductor element such as an IC or an LSI can be used. The first electronic component 2 is made of a semiconductor material such as silicon, germanium, gallium arsenide, gallium arsenide phosphorus, gallium nitride, or silicon carbide.

  The thickness of the first electronic component 2 is set to, for example, 0.05 mm or more and 1 mm or less.

  In addition, the thickness of the first electronic component 2 is observed with a scanning electron microscope or a transmission electron microscope, and the length along the thickness direction (Z direction) is 10 places, as a cross section exposed by polishing the first electronic component 2 is observed. It is measured by measuring above and calculating the average value.

  Hereinafter, the thickness of each member is measured in the same manner as the first electronic component 2.

(Component built-in board 3)
The component-embedded substrate 3 includes a core substrate 5, a second electronic component 6 located inside the core substrate 5, and a pair of wiring layers 7 and 7 formed on both main surfaces of the core substrate 5.

  The component built-in substrate 3 is set to have a thickness of, for example, 0.05 mm or more and 1.5 mm or less.

(Core substrate 5)
The core substrate 5 is a main part of the component built-in substrate 3. The core substrate 5 includes a base body 8 in which the second electronic component 6 described above is located, a pair of conductive layers 9 and 9 formed on both main surfaces of the base body 8, and the second electronic component 6 and the conductive layer 9. A via conductor 10 electrically connecting each other, a cylindrical through-hole conductor 11 electrically connecting the pair of conductive layers 9 and 9, and an insulator filled in the cylindrical through-hole conductor 11 12 and so on.

  The core substrate 5 has a thickness of, for example, 0.025 mm to 1.2 mm, a Young's modulus of, for example, 5 GPa to 30 GPa, and a thermal expansion coefficient in the plane direction (XY plane direction) of, for example, 1 ppm / ° C. to 20 ppm / ° C. Is set to

  The thermal expansion coefficient of the core substrate 5 is measured by a measuring method according to JIS K7197-1991 using a commercially available TMA (thermomechanical analysis) apparatus.

  Hereinafter, the coefficient of thermal expansion of each member is measured in the same manner as the core substrate 5.

  In addition, the Young's modulus of the core substrate 5 is measured by cutting out a rectangular test piece of the core substrate 5 from the component-embedded substrate 3 with, for example, a dicing machine, a knife, or a saw, and measuring the test piece with a tensile tester. It can be measured by dividing the obtained tensile stress per unit sectional area by the amount of elongation of the resin.

  Hereinafter, the Young's modulus of each member is measured in the same manner as the core substrate 5 unless otherwise specified.

  The base 8 is a main part of the core substrate 5. The base 8 includes a resin base 13, a pair of inorganic insulating layers 14 and 14 disposed on both main surfaces of the resin base 13, and a first resin layer 15 positioned between the resin base 13 and the inorganic insulating layer 14. Including.

  The substrate 8 has a thickness of, for example, 0.02 mm to 1.20 mm, a Young's modulus of, for example, 5 GPa to 30 GPa, and a thermal expansion coefficient in the plane direction (XY plane direction) of, for example, 1 ppm / ° C. to 20 ppm / ° C. Is set.

  The resin base 13 is a main part of the base 8. The resin substrate 13 is formed by laminating a single resin substrate layer 16 or a plurality of resin substrate layers 16, and has a hole H for accommodating the second electronic component 6 described above.

  The resin substrate 13 has a thickness of, for example, 0.02 mm to 1.15 mm, a Young's modulus of, for example, 0.2 GPa to 20 GPa, and a thermal expansion coefficient in the plane direction (XY plane direction) of, for example, 10 ppm / ° C. to 30 ppm / ° C. Is set.

  The resin base layer 16 is a main part of the resin base 13. The resin base layer 16 includes, for example, a base resin part 17 and a base material 18 covered with the base resin part 17.

  The resin base layer 16 has a thickness of 0.01 mm to 0.3 mm, a Young's modulus of 0.2 GPa to 20 GPa, and a thermal expansion coefficient in the plane direction (XY plane direction) of 3 ppm to 20 ppm, for example. Is set.

  The base resin portion 17 is a main part of the resin base layer 16 and is made of, for example, a resin material such as an epoxy resin, a virmaleimide triazine resin, or a cyanate resin.

  The base resin portion 17 has a Young's modulus set to, for example, 0.1 GPa or more and 5 GPa or less, and a thermal expansion coefficient set to, for example, 20 ppm / ° C. or more and 50 ppm / ° C. or less.

  The base material 18 increases the Young's modulus of the resin base layer 16 and reduces the thermal expansion coefficient of the resin base layer 16 in the plane direction (XY plane direction). As this base material 18, for example, a woven or non-woven fabric constituted by fibers or a fiber in which fibers are arranged in one direction can be used. Examples of the fibers include glass fibers, resin fibers, carbon fibers, or metal fibers. Etc.

  This fiber has a Young's modulus of, for example, 10 GPa or more and 25 GPa or less, and a thermal expansion coefficient in the plane direction (XY plane direction) of, for example, 2 ppm / ° C. or more and 25 ppm / ° C. or less.

  The inorganic insulating layer 14 increases the Young's modulus of the base 8 and reduces the coefficient of thermal expansion of the base 8 and supports the second electronic component 6.

  The inorganic insulating layer 14 has a thickness set to, for example, 3 μm to 100 μm, which corresponds to 5% to 50% of the resin base 13. The inorganic insulating layer 14 has a Young's modulus of, for example, 20 GPa or more and 50 GPa or less, and a thermal expansion coefficient in the thickness direction (Z direction) and the plane direction (XY plane direction) of, for example, 0.6 ppm / ° C. or more and 10 ppm / ° C. or less. Is set.

  In addition, the Young's modulus of the inorganic insulating layer 14 is measured by a measuring method according to ISO 527-1: 1993 using a nanoindenter.

  Such an inorganic insulating layer 14 includes a plurality of first inorganic insulating particles 19 made of an inorganic insulating material. Therefore, since the inorganic insulating material has a smaller coefficient of thermal expansion than the resin material, the coefficient of thermal expansion of the inorganic insulating layer 14 is small. As a result, the inorganic insulating layer 14 can reduce the thermal expansion amount of the resin base 13.

  Since the inorganic insulating material has a higher Young's modulus than the resin material, the inorganic insulating layer 14 has a higher Young's modulus. As a result, the inorganic insulating layer 14 can not only reduce the amount of thermal expansion of the resin base 13 but also suppress deformation due to the thermal expansion of the resin base 13.

  Further, as shown in FIGS. 2 and 3, since the plurality of first inorganic insulating particles 19 are connected to each other, the plurality of first inorganic insulating particles 19 are bound to each other. As a result, since the Young's modulus of the inorganic insulating layer 14 can be improved, the inorganic insulating layer 14 can further reduce deformation due to the thermal expansion of the resin base 13.

  Therefore, the inorganic insulating layer 14 can reduce the thermal expansion of the resin base 13 and deformation caused by the thermal expansion, and thereby suppress and reduce the warpage of the core substrate 5.

  As shown in FIG. 3, since the plurality of first inorganic insulating particles 19 are connected to the inorganic insulating layer 14 at a part of each other, the gap surrounded by the plurality of first inorganic insulating particles 19 is used. G is formed, and a part of the first resin layer 15 enters as will be described later.

  In the inorganic insulating layer 14, for example, 62 volume% or more and 75 volume% or less of the inorganic insulating layer 14 is the first inorganic insulating particle 19, and 25 volume% or more and 38 volume% or less of the inorganic insulating layer 14 is the gap G. . In the gap G, a part of the first resin layer 15 occupies, for example, 99.5% by volume to 100% by volume of the gap G. The width of the gap G is set to 10 nm or more and 300 nm or less.

The volume ratio (volume%) of the first inorganic insulating particles 19 is determined by taking a cross-section exposed by polishing the inorganic insulating layer 14 with a scanning electron microscope or a transmission electron microscope, and using an image analysis device or the like from the taken image. And measure the area ratio (area%) of each. Next, the volume ratio is obtained by calculating an average value of the measured values.

  Hereinafter, the volume ratio of each member is measured in the same manner as the first inorganic insulating particles 19.

  The gap G is confirmed by observing a cross section exposed by polishing the inorganic insulating layer 14 with a scanning electron microscope or a transmission electron microscope. Further, the width of the gap G is measured by observing a cross section of the inorganic insulating layer 14 with a scanning electron microscope or a transmission electron microscope, photographing a cross section expanded to include the gap G of 20 to 50 in number, The average value of the maximum diameters of the gaps G is obtained as the width of the gap G in the cross section.

  The first inorganic insulating particles 19 are made of, for example, an inorganic insulating material such as silicon oxide, aluminum oxide, magnesium oxide, or calcium oxide. Among these, it is desirable to use silicon oxide. Since silicon oxide has a low dielectric loss tangent compared to other inorganic insulating materials, the signal transmission characteristics of the conductive layer 9 can be improved.

  The first inorganic insulating particles 19 are preferably made of an amorphous material. By making the first inorganic insulating particles 19 amorphous, the anisotropy of the coefficient of thermal expansion due to the crystal structure can be reduced, and the occurrence of cracks in the inorganic insulating layer 14 can be reduced.

The first inorganic insulating particles 19 have an average particle diameter of 3 nm to 110 nm, a Young's modulus of 10 GPa to 100 GPa, and a thermal expansion coefficient of 0.5 ppm / ° C. to 1.5 pp, for example.
m / ° C. or lower.

  In addition, the 1st inorganic insulating particle 19 is confirmed by observing the cross section exposed by grinding | polishing of the inorganic insulating layer 14 with a scanning electron microscope or a transmission electron microscope. The average particle diameter of the first inorganic insulating particles 19 is obtained by observing the cross section of the inorganic insulating layer 14 with a scanning electron microscope or a transmission electron microscope, and expanding the cross section to include 20 or more and 50 or less particles. It is measured by photographing, measuring the maximum diameter of each particle in this enlarged cross section, and averaging it.

  Hereinafter, the average particle diameter of each member is measured in the same manner as the first inorganic insulating particles 19.

  The inorganic insulating layer 14 preferably includes second inorganic insulating particles 20 having an average particle size larger than that of the first inorganic insulating particles 19.

  In this case, the inorganic insulating layer 14 is formed by connecting a plurality of first inorganic insulating particles 19 to each other and the first inorganic insulating particles 19 and the second inorganic insulating particles 20 in part. As a result, since the average particle size of the second inorganic insulating particles 20 is larger than the average particle size of the first inorganic insulating particles 19, a part of the first resin layer 15 that has entered the gap G of the inorganic insulating layer 14, Peeling from the first inorganic insulating particles 19 and the second inorganic insulating particles 20 can be reduced.

  The second inorganic insulating particles 20 are made of, for example, an inorganic insulating material such as silicon oxide, aluminum oxide, magnesium oxide, or calcium oxide.

  The second inorganic insulating particles 20 are desirably formed of the same material as the first inorganic insulating particles 19. As a result, the connection between the first inorganic insulating particles 19 and the second inorganic insulating particles 20 is strengthened, and cracks generated in the inorganic insulating layer 14 can be favorably reduced.

The second inorganic insulating particles 20 are preferably made of an amorphous material. As a result, generation of cracks in the inorganic insulating layer 14 due to the crystal structure of the second inorganic insulating particles 20 can be reduced.

  The second inorganic insulating particles 20 have an average particle size of 0.5 μm or more and 5 μm or less, and Young's modulus and thermal expansion coefficient are set similarly to the first inorganic insulating particles 19.

  Further, in the inorganic insulating layer 14, for example, 62 volume% or more and 75 volume% or less of the inorganic insulating layer 14 is the first inorganic insulating particles 19 and the second inorganic insulating particles 20, of which, for example, 20 volume% or more and 90 volume%. The following are the first inorganic insulating particles 19, and 10 volume% or more and 80 volume% or less are the second inorganic insulating particles 20.

  The first resin layer 15 improves the adhesive strength between the resin base 13 and the inorganic insulating layer 14, enters the periphery of the second electronic component 6, and enters the hole H formed in the resin base 13. A part of the first resin layer 15 enters the gap G of the inorganic insulating layer 14 as described above.

  Here, since a part of the first resin layer 15 enters the hole H, the contact area between the first resin layer 15 and the resin base 13 is increased, and the first resin layer 15 and the resin base 13 are The adhesive strength can be improved. As a result, peeling of the inorganic insulating layer 14 from the resin base 13 can be reduced.

  In addition, since a part of the first resin layer 15 enters the gap G, the adhesion area between the first resin layer 15 and the inorganic insulating layer 14 increases, and the first resin layer 15 and the inorganic insulating layer 14 The adhesive strength can be improved. As a result, peeling of the first resin layer 15 from the inorganic insulating layer 14 can be reduced.

  The first resin layer 15 includes, for example, a first resin portion 21 and a plurality of first filler particles 22 that are covered with the first resin portion 21 and dispersed in the first resin layer 15. Further, a part of the first resin portion 21 enters the gap G, so that a part of the first resin layer 15 enters the gap G.

  The thickness of the first resin layer 15 between the resin base 13 and the inorganic insulating layer 14 is, for example, 3 μm or more and 20 μm or less, and the Young's modulus is, for example, 1 GPa or more and 10 GPa or less. The coefficient of thermal expansion in the direction (XY plane direction) is set to 20 ppm / ° C. or more and 70 ppm / ° C. or less, for example.

  The thickness of the first resin layer 15 is the thickness of the portion located on one main surface of the inorganic insulating layer 14 except for the portion that enters the inside of the inorganic insulating layer 14.

  In the first resin layer 15, for example, 10 volume% or more and 70 volume% or less of the first resin layer 15 formed on one main surface of the inorganic insulating layer 14 is filler particles.

  The 1st resin part 21 makes the principal part of the 1st resin layer 15, for example, consists of resin materials, such as an epoxy resin, a bilmaleimide triazine resin, or cyanate resin.

  The first resin portion 21 has a Young's modulus set to, for example, 0.2 GPa or more and 5 GPa or less, and a thermal expansion coefficient set to, for example, 20 ppm / ° C. or more and 50 ppm / ° C. or less.

Here, the first resin portion 21 enters the gap G of the inorganic insulating layer 14. Since the first resin portion 21 has a Young's modulus smaller than that of the inorganic insulating layer 14, the first resin portion 21 that has entered the gap G relaxes the stress applied to the inorganic insulating layer 14, and cracks in the inorganic insulating layer 14. Generation or crack elongation can be reduced.

  The first filler particles 22 increase the Young's modulus of the first resin layer 15 and reduce the thermal expansion coefficient of the first resin layer 15. For example, silicon oxide, aluminum oxide, aluminum nitride, aluminum hydroxide or Made of inorganic insulating material such as calcium carbonate.

  The first filler particles 22 have an average particle size of, for example, 0.3 μm or more and 5.0 μm or less, a Young's modulus of, for example, 40 GPa or more and 90 GPa or less, and a thermal expansion coefficient of, for example, 0 ppm / ° C. or more and 15 ppm / ° C. or less. .

  In the core substrate 5 described above, conductive layers 9 are formed on both main surfaces of the base body 8 so as to be electrically connected to the wiring layers 7 formed on both main surfaces of the core substrate 5.

  The conductive layer 9 is made of a conductive material such as copper, silver, gold, or aluminum, for example.

  The conductive layer 9 is set to have a thickness of, for example, 3 μm to 20 μm, a Young's modulus of, for example, 80 GPa to 200 GPa, and a thermal expansion coefficient in the plane direction (XY plane direction) of, for example, 16 ppm / ° C. to 18 ppm / ° C. Yes.

  The via conductor 10 electrically connects the second electronic component 6 and the conductive layer 9 and is made of a conductive material such as copper, silver, gold, or aluminum.

  The via conductor 10 has a Young's modulus set to, for example, 80 GPa or more and 200 GPa or less, and a coefficient of thermal expansion in the thickness direction (Z direction) and the plane direction (XY plane direction), for example, 16 ppm / ° C. or more and 18 ppm / ° C. or less.

  The through-hole conductor 11 penetrates the base body 8 in the thickness direction (Z direction), and electrically connects the pair of conductive layers 9 and 9 formed on both main surfaces of the base body 8.

  Such a through-hole conductor 11 penetrates the base body 8 in the thickness direction (Z direction), for example, along the inner wall of a cylindrical through-hole T having a diameter of 0.1 mm or more and 1 mm or less, for example, copper, silver, It is formed in a cylindrical shape by a conductive material such as gold or aluminum.

  The through-hole conductor 11 has a Young's modulus set to, for example, 80 GPa or more and 200 GPa or less, and a coefficient of thermal expansion in a plane direction (XY plane direction), for example, 16 ppm / ° C. or more and 18 ppm / ° C. or less.

  An insulating portion 10 is formed inside the through-hole conductor 11 formed in a cylindrical shape. The end face of the insulating portion 10 supports the conductive layer 9 formed on these end faces together with the end face of the through-hole conductor 11, and for example, polyimide resin, acrylic resin, epoxy resin, cyanate resin, polyphenylene ether resin Or it is formed with resin materials, such as a bismaleimide triazine resin.

  The insulator 12 is set such that the Young's modulus is, for example, 0.2 GPa or more and 5 GPa or less, and the thermal expansion coefficient in the plane direction (XY plane direction) is, for example, 20 ppm / ° C. or more and 50 ppm / ° C. or less.

(Second electronic component 6)
The second electronic component 6 is positioned in the hole H formed in the resin base 13 included in the base 8 of the core substrate 5, and the first resin layer 15 is interposed on one main surface of the inorganic insulating layer 14. The at least one main surface of the second electronic component 6 is electrically connected to the conductive layer 9 by being connected to the via conductor 10.

  The second electronic component 6 includes, for example, a semiconductor element, a multilayer ceramic capacitor, a thin film capacitor produced by a vacuum process such as sputtering, a thin film resistor or impedance, and a functional element such as a high frequency filter or balun produced by combining them. MEMS or the like can be used.

The second electronic component 6 has a thickness of, for example, 0.05 mm to 0.4 mm, a Young's modulus of 50 GPa to 150 GPa, and a coefficient of thermal expansion in the plane direction (XY plane direction) of 2 ppm / ° C. to 8 ppm / ° C. Has been.

(Wiring layer 7)
On the other hand, as described above, the pair of wiring layers 7 and 7 are formed on the upper and lower surfaces of the core substrate 5.

  The wiring layer 7 includes an inorganic insulating layer 14, a first resin layer 15 formed on one main surface of the inorganic insulating layer 14, a conductive layer 9 formed on the other main surface of the inorganic insulating layer 14, and a thickness direction ( And via conductors 10 that electrically connect the conductive layers 9 separated in the Z direction).

  The inorganic insulating layer 14 has the same configuration as described above, and improves the Young's modulus of the wiring layer 7 and reduces the coefficient of thermal expansion of the wiring layer 7.

  The first resin layer 15 has the same configuration as described above, and adheres the core substrate 5 and the inorganic insulating layer 14.

  Incidentally, as described above, the inorganic insulating layer 14 has a smaller coefficient of thermal expansion than that of the resin base 13 and a higher Young's modulus. Therefore, the amount of thermal expansion of the resin base 13 is reduced and the thermal expansion of the resin base 13 is also achieved. The deformation | transformation by can be suppressed. As a result, warpage of the core substrate 5 can be suppressed and reduced, the connection reliability between the core substrate 5 and the second electronic component 6 can be improved, and as a result, the connection reliability of the component built-in substrate can be improved. Can do.

  Moreover, as shown in FIG. 1, it is desirable that the hole H of the resin base 13 penetrates. As a result, the amount of thermal expansion in the plane direction (XY plane direction) in the thickness direction (Z direction) of the resin substrate 13 is smaller than that in the case where the non-through holes H are formed in the resin substrate 13. It is possible to reduce the change in the thickness direction (Z direction) of 13 and reduce the warp of the core substrate 5.

  Further, as shown in FIG. 1, the inorganic insulating layer 14 is desirably formed over the opening and non-opening portions of the hole H of the resin base 13. As a result, since the inorganic insulating layer 14 has a Young's modulus larger than that of the resin base 13, it is possible to reduce the distortion of the core substrate 5 due to the difference in thermal expansion between the opening and the non-opening of the resin base 13. .

  The second electronic component 6 is preferably located on one main surface of the inorganic insulating layer 14. As a result, since the inorganic insulating layer 14 has a large Young's modulus, the deformation of the inorganic insulating layer 14 due to thermal expansion of other members can be reduced, and the connection reliability between the second electronic component 6 and the core substrate 5 can be reduced. Can be improved.

Further, it is desirable that the second electronic component 6 is located via the first resin layer 15 of the inorganic insulating layer 14. As a result, since the first resin layer 15 has a Young's modulus smaller than that of the second electronic component 6 and the inorganic insulating layer 14, the stress applied to the second electronic component and the inorganic insulating layer 14 is relaxed, and the second electron The occurrence of cracks in the component 6 or the inorganic insulating layer 14 can be reduced.

  As shown in FIGS. 1 and 3, the second electronic component 6 is preferably connected directly to the via conductor 10. As a result, it is not necessary to provide a pad portion formed on the core substrate 5 between the second electronic component 6 and the via conductor 10 and interposed between the second electronic component 6 and the via conductor 10. The substrate 5 can be formed thin.

  As shown in FIGS. 1 and 4, the via conductor 10 is formed so as to penetrate the inorganic insulating layer 14 and the first resin layer 15. As a result, since the first resin layer 15 having a larger thermal expansion coefficient than the via conductor 10 and the inorganic insulating layer 14 having a smaller thermal expansion coefficient than the via conductor 10 are penetrated, the thickness direction (Z direction) Further, the difference in thermal expansion between the inorganic insulating layer 14 and the first resin layer 15 and the via conductor 10 can be reduced, and the separation of the via conductor 10 and the second electronic component 6 can be favorably reduced.

  Further, as shown in FIG. 4, the via conductor 10 desirably has a width at one end located on the second electronic component 6 side larger than a width at the other end located on the conductive layer 9 side. As a result, the distance between the conductive layers 9 adjacent to each other in the plane direction (XY plane direction) can be narrowed and the conductive layers 9 can be wired with high density, and the contact area between the second electronic component 6 and the via conductor 10 is large. Therefore, it is possible to satisfactorily reduce the separation of the second electronic component 6 and the via conductor 10.

  In the first resin layer 15, the thickness of the portion located between the second electronic component 6 and the inorganic insulating layer 14 is smaller than the thickness of the portion located between the resin base 13 and the inorganic insulating layer 14. It is desirable. As a result, the disconnection between the second electronic component 6 and the via conductor 10 due to the thermal expansion of the first resin layer 15 can be reduced.

  As shown in FIG. 2, in the first resin layer 15, the content ratio of the first filler particles 22 is the second region where the first region located on the inorganic insulating layer 14 side is located on the resin base 13 side. Desirably larger than the area. As a result, the coefficient of thermal expansion of the first resin layer 15 on the inorganic insulating layer 14 side is reduced, and the difference in coefficient of thermal expansion between the inorganic insulating layer 14 and the first resin layer 15 can be reduced. Moreover, it can reduce that the thermal expansion coefficient of the 1st resin layer 15 by the side of the resin base 13 becomes small too much, and can reduce the difference of the thermal expansion coefficient of the resin base 13 and the 1st resin layer 15. FIG. Therefore, since peeling between the first resin layer 15 and the resin base 13 and the inorganic insulating layer 14 can be reduced, the adhesive strength between the resin base 13 and the inorganic insulating layer 14 can be improved.

  In addition, the content rate of the 1st filler particle | grains 22 is divided into two in the plane direction (XY plane direction) so that the thickness may equalize the 1st resin layer 15 located on one main surface of the inorganic insulating layer 14, and is inorganic. When the first region is closer to the insulating layer 14 and the second region is closer to the conductive layer 9, 55% or more and 70% or more of the first filler particles 22 are located in the first region. In the second region, 30% or more and 45% or less of the first filler particles 22 are located at a ratio.

  The first resin layer 15 has second filler particles (not shown) whose average particle size is smaller than the width of the gap G, and the second filler particles are in the gap G on the surface layer of the inorganic insulating layer 14. It is desirable to enter. As a result, the difference in thermal expansion between the inorganic insulating layer 14 and the first resin layer 15 can be further reduced, and the first resin layer 15 can be favorably reduced from peeling off from the inorganic insulating layer 14.

  In this case, for example, 3% by volume or more and 30% by volume or less of the first resin layer 15 are the second filler particles. Further, 2% or more and 20% or less of the second filler particles are located in the gap G.

(Production of mounting structure 1)
Next, a method for manufacturing the mounting structure 1 described above will be described with reference to FIGS.

(Preparation of laminated sheet 24)
(1) An inorganic insulating sol 14x having a solid content including the first inorganic insulating particles 19 and the second inorganic insulating particles 20 and a solvent in which the solid content is dispersed is prepared.

  The inorganic insulating sol 14x includes, for example, a solid content of 10% to 50% by volume and a solvent of 50% to 90% by volume. By setting the solid content to 10% by volume or more, the viscosity of the inorganic insulating sol 14x is kept low, and by setting the solid content to 50% by volume or less, the productivity of the insulating layer formed from the inorganic insulating sol 14x is increased. Highly maintainable.

  The solid content of the inorganic insulating sol 14x includes, for example, the first inorganic insulating particles 19 from 20% by volume to 90% by volume and the second inorganic insulating particles 20 from 10% by volume to 80% by volume. Thereby, generation | occurrence | production of the crack in the inorganic insulating layer 14 can be effectively reduced in the process of (3) mentioned later.

  The first inorganic insulating particles 19 can be produced, for example, by purifying a silicate compound such as a sodium silicate aqueous solution (water glass) and chemically depositing silicon oxide. In this case, since the first inorganic insulating particles 19 can be produced under a low temperature condition, the first inorganic insulating particles 19 in an amorphous state can be produced.

  On the other hand, if the second inorganic insulating particle 20 is made of silicon oxide, for example, a solution obtained by purifying a silicate compound such as a sodium silicate aqueous solution (water glass) and chemically depositing silicon oxide is used as a flame. It can be produced by spraying in and heating to 800 ° C. or higher and 1500 ° C. or lower while reducing the formation of aggregates.

  Moreover, it is desirable that the heating time for producing the second inorganic insulating particles 20 is set to 1 second or more and 180 seconds or less. As a result, by shortening the heating time, the crystallization of the second inorganic insulating particles 20 can be reduced and the amorphous state can be maintained even when heated to 800 ° C. or higher and 1500 ° C. or lower.

  On the other hand, the solvent contained in the inorganic insulating sol 14x is, for example, methanol, isopropanol, n-butanol, ethylene glycol, ethylene glycol monopropyl ether, methyl ethyl ketone, methyl isobutyl ketone, xylene, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, An organic solvent containing dimethylacetamide and / or a mixture of two or more selected from these can be used.

  (2) A metal foil 23 is prepared, and an inorganic insulating sol 14 x is applied to one main surface of the metal foil 23.

  The inorganic insulating sol 14x can be applied using, for example, a dispenser, a bar coater, a die coater, or screen printing. At this time, as described above, since the solid content of the inorganic insulating sol 14x is set to 50% by volume or less, the viscosity of the inorganic insulating sol 14x is set low, and the flatness of the coated inorganic insulating sol 14x is increased. can do.

  (3) The inorganic insulating sol 14x is dried to evaporate the solvent.

Here, the inorganic insulating sol 14x contracts as the solvent evaporates, and the solvent is contained in the gap G surrounded by the first inorganic insulating particles 19 and the second inorganic insulating particles 20, and the first inorganic sol 14x. The insulating particles 19 and the second inorganic insulating particles 20 themselves are not included. For this reason, if the inorganic insulating sol 14x includes the second inorganic insulating particles 20 having a large average particle diameter, the gap G is reduced accordingly, and the region filled with the solvent is reduced. When the solvent evaporates, the amount of shrinkage of the inorganic insulating sol 14x is reduced. That is, the contraction of the inorganic insulating sol 14x is regulated by the second inorganic insulating particles 20. As a result, the generation of cracks due to the shrinkage of the inorganic insulating sol 14x can be reduced. Even if a crack occurs, the extension of the crack can be prevented by the second inorganic insulating particles 20 having a large average particle diameter.

  The inorganic insulating sol 14x is dried by, for example, heating and air drying. The drying temperature is set to, for example, 20 ° C. or more and lower than the boiling point of the solvent (the boiling point of the lowest boiling solvent when two or more solvents are mixed), and the drying time is, for example, 20 seconds to 30 minutes. Set to As a result, the boiling of the solvent is reduced, the extrusion of the first inorganic insulating particles 19 and the second inorganic insulating particles 20 due to the pressure of bubbles generated during the boiling is reduced, and the distribution of the particles is made more uniform. Is possible.

  (4) An inorganic insulating layer in which the solid content of the remaining inorganic insulating sol 14x is heated to connect the first inorganic insulating particles 19 to each other and the first inorganic insulating particles 19 and the second inorganic insulating particles 20 at a part of each other. 14 is produced.

  Here, the inorganic insulating sol 14x in the present embodiment has the first inorganic insulating particles 19 whose average particle diameter is set to be minute. As a result, even if the heating temperature of the inorganic insulating sol 14x is relatively low, for example, less than the crystallization start temperature of the first inorganic insulating particles 19 and the second inorganic insulating particles 20, the first inorganic insulating particles 19 are bonded together. It can be firmly connected.

  The temperature at which the first inorganic insulating particles 19 can be firmly connected is, for example, about 250 ° C. when the average particle size of the first inorganic insulating particles 19 is set to 110 nm or less. When it is set to 15 nm or less, it is about 150 ° C. The crystallization start temperature of silicon oxide contained in the first inorganic insulating particles 19 and the second inorganic insulating particles 20 is about 1300 ° C.

  The heating temperature of the inorganic insulating sol 14x is desirably set to be lower than the crystallization start temperature of the first inorganic insulating particles 19 and the second inorganic insulating particles 20. As a result, the crystallized particles can be prevented from shrinking due to phase transition, and the occurrence of cracks in the inorganic insulating layer 14 can be reduced.

  Furthermore, by heating at such a low temperature in this way, the first inorganic insulating particles 19 and the first inorganic insulating particles 19 and the first inorganic insulating particles 19 and the first inorganic insulating particles 19 and the second inorganic insulating particles 20 maintain the shape of the particles. 2 The inorganic insulating particles 20 can be connected only in the proximity region. As a result, the first inorganic insulating particles 19 and the first inorganic insulating particles 19 and the second inorganic insulating particles 20 can be connected to each other. As a result, the open pore gap G can be easily formed between the first inorganic insulating particles 19. Can be formed.

  The heating of the inorganic insulating sol 14x is desirably set at a temperature of, for example, 100 ° C. or more and less than 300 ° C., and for a time of, for example, 0.5 hour or more and 24 hours or less.

(5) First resin precursor 15x including uncured first resin material 21x and first filler particles 22 coated with first resin material 21x is prepared. Next, as shown in FIG. 5A, the first resin precursor 15x is laminated on the main surface of the inorganic insulating layer 14 opposite to the metal foil 23, and the metal foil 23, the inorganic insulating layer 14 and the first resin precursor are laminated. By heating and pressing the body 15x in the vertical direction,
The uncured first resin material 21x is inserted into a part of the gap G of the inorganic insulating layer 14, and the inorganic insulating layer 14 and the first resin precursor 15x are bonded together. In addition, uncured is the state of A-stage or B-stage according to ISO472: 1999.

  The metal foil 14, the inorganic insulating layer 14, and the first resin precursor 15x are heated and pressurized at a heating temperature of 60 ° C. to 160 ° C. and a pressure of 0.1 MPa to 2 MPa, for example. The pressure time is set to, for example, 0.5 hours or more and 2 hours or less. The curing start temperature is a temperature at which the resin becomes a C-stage according to ISO 472: 1999.

  Here, the average particle diameter of the first filler particles 22 contained in the first resin precursor 15x is preferably larger than the width of the gap G. As a result, the uncured first resin material 21x of the first resin precursor 15x enters the gap G of the inorganic insulating layer 14, so that the plurality of first filler particles 22 are filtered to the surface layer of the inorganic insulating layer 14. Thus, the first resin layer 15 having a larger content ratio of the first filler particles 22 in the region closer to the inorganic insulating layer 14 than in the region farther from the inorganic insulating layer 14 can be formed. Therefore, the first resin layer 15 having a small coefficient of thermal expansion on the inorganic insulating layer 14 side can be easily manufactured, and as a result, the production efficiency can be improved.

  For example, 10 volume% or more and 55 volume% or less of the first resin precursor 15x is the first filler particles 22, and is formed on one main surface of the inorganic insulating layer 14 after the formation of the first resin layer 15. Further, the first filler particles 22 are included in the first resin layer 15 in an amount of 10% by volume to 70% by volume.

  Further, the first resin precursor 15x desirably includes second filler particles having an average particle size smaller than the width of the gap G. As a result, the uncured first resin material 21x of the first resin precursor 15x enters the gap G of the inorganic insulating layer 14, and a plurality of second filler particles can enter the gap G.

  As described above, the laminated sheet 24 including the metal foil 23, the inorganic insulating layer 14, and the first resin precursor 15x is produced.

(Preparation of core substrate 5)
(6) A resin substrate precursor 13x including one or a plurality of resin substrate layer precursors 16x is prepared, and the resin substrate precursor 13x is heated and pressurized to cure the resin substrate layer precursor 16x, thereby forming a resin substrate layer. 16, the resin substrate 13 is produced. Next, a hole H in which the second electronic component 6 is accommodated is formed in the resin base 13.

  Note that the heat and pressure of the resin base precursor 13x are set such that the temperature is, for example, 150 ° C. or more and 250 ° C. or less, the pressure is, for example, 2 MPa or more, 3 MPa or less, and the time is, for example, 0.5 hours or more, 2 hours or less. The hole H is formed by, for example, punching using a mold, machining using a router, laser processing, or the like.

  (7) As shown in FIG. 5B, the second electronic component 6 is disposed on the main surface of the first resin precursor 15 x of the laminated sheet 24 opposite to the inorganic insulating layer 14. Next, as shown in FIG. 5C, the resin substrate 13 is placed on the same main surface as the second electronic component 6 of the first resin precursor 15x so that the second electronic component 6 is positioned inside the resin substrate 13. Then, the laminated sheet 24 is further laminated so that the main surface of the first resin precursor 15x of the laminated sheet 24 opposite to the inorganic insulating layer 14 is in contact with the main surface from which the resin base 13 is exposed. The laminated body 25 is produced.

Here, when the second electronic component 6 is disposed on the main surface of the inorganic insulating layer 14, the first resin precursor 15x.
Therefore, the first resin precursor 15x functions as a cushion, the second electronic component 6 directly contacts the inorganic insulating layer 14, and the second electronic component 6 or the inorganic insulating layer 14 cracks. Can be reduced.

  Next, the first resin precursor 15 x is cured to form the first resin layer 15 by heating and pressing the laminated body 25. At this time, as shown in FIG. 5 (d), the uncured first resin material 21 x of the first resin precursor 15 x enters the periphery of the second electronic component 6 in the hole H, and the second electronic component 6. Is filled with a part of the first resin layer.

  The heating and pressurization of the laminated body 25 is performed at a temperature equal to or higher than the curing start temperature of the first resin precursor 15 x and lower than the thermal decomposition temperature of the first resin layer 15. Specifically, the temperature is set to, for example, 150 ° C. to 250 ° C., the pressure is set to, for example, 2 MPa to 3 MPa, and the time is set, for example, to 0.5 hour to 2 hours.

  Here, if the thickness of the second electronic component 6 is set to be smaller than the thickness of the resin base 13, the second electronic component 6 in the first resin layer 15 can be satisfactorily obtained when the laminate 25 is pressed. The thickness between the inorganic insulating layer 14 can be set smaller than the thickness between the resin base 13 and the inorganic insulating layer 14.

  As described above, the second electronic component 6 is accommodated, and the base 8 including the resin base 13, the inorganic insulating layer 14, and the first resin layer 15 is manufactured.

  (8) As shown in FIG. 6A, a via that penetrates the metal foil 23, the inorganic insulating layer 14, and the first resin layer 15 in the thickness direction (Z direction) toward the external electrode of the second electronic component 6. Conductive layer 9 that forms conductor 10 and through-hole conductor 11 that penetrates metal foil 23 and substrate 8 in the thickness direction (Z direction), and is electrically connected to via conductor 10 and through-hole conductor 11 on substrate 8. Form. Specifically, this is performed as follows.

  The via conductor 10 is formed with a via hole V in the metal foil 23, the inorganic insulating layer 14, and the first resin layer 15 by, for example, a YAG laser device or a carbon dioxide gas laser device, and the second electronic component 6 is formed at the bottom of the via hole V. At least a part of the external electrode is exposed. Next, the via hole V is formed by burying a conductive material using, for example, electroless plating, vapor deposition, CVD, or sputtering.

  At this time, in the via hole V, the first resin layer 15 has a higher resolution by the laser beam than the inorganic insulating layer 14, so that the width of one end portion located on the second electronic component 6 side is the conductive layer 9. It is formed larger than the width of the other end located on the side. As a result, the via conductor 10 is also formed such that the width of one end located on the second electronic component 6 side is larger than the width of the other end located on the conductive layer 9 side, and the second electronic component 6 is positioned at a predetermined position. Even when the position is shifted from the position, the connection between the second electronic component 6 and the via conductor 10 can be secured satisfactorily.

  The through-hole conductor 11 forms a plurality of through-holes T penetrating the base 8 in the thickness direction (Z direction) by, for example, drilling or laser processing. Next, a cylindrical through-hole conductor 11 is formed by depositing a conductive material on the inner wall of the through-hole T by, for example, electroless plating, vapor deposition, CVD, or sputtering. Next, the inside of the cylindrical through-hole conductor 11 is filled with a resin material or the like to form the insulator 12.

  After the via conductor 10 and the through-hole conductor 11 are formed, a conductive material is deposited on the exposed portion of the insulator 9 by, for example, an electroless plating method, a vapor deposition method, a CVD method, or a sputtering method. Next, the conductive layer 9 is formed by arbitrarily patterning the deposited conductive material using a photolithography method, etching, or the like.

  The core substrate 5 is manufactured as described above.

(Preparation of wiring layer 7)
(9) As shown in FIG. 6B, the first resin precursor 15 x is laminated on one main surface of the conductive layer 9 formed on both main surfaces of the core substrate 5 so as to cover the conductive layer 9. The sheets 24 are laminated. Next, the first resin precursor 15 x is cured to form the first resin layer 15 by heating and pressing the core substrate 5 and the laminated sheet 24. Thereafter, the wiring layer 7 is produced by forming the via conductor 10 and the conductive layer 9 in the same manner as in the step (8) described above.

  As described above, the component-embedded substrate 3 can be manufactured.

(Mounting of the first electronic component 2)
(10) As shown in FIG. 7, the first electronic component 2 is flip-chiped onto the component-embedded substrate 3 via the bumps 4 on the surface of the main surface of the component-embedded substrate 3 where the first resin layer 15 </ b> B is exposed. The mounting structure 1 can be produced by mounting.

Second Embodiment
(Mounting structure 1)
Next, a second example (second embodiment) of the embodiment of the component-embedded substrate and the mounting structure according to the present invention will be described in detail with reference to FIG. In addition, description is abbreviate | omitted regarding the structure similar to 1st Embodiment mentioned above.

  Unlike the first embodiment, the component-embedded substrate 3 of the second embodiment is a resin in which, as shown in FIG. 8, a plurality of hole portions H are formed and an opening portion of the hole portion H is formed on one main surface. The substrate 13 and the second electronic component 6 accommodated in each hole H of the resin substrate 13 are included.

  As described above, the component built-in substrate 3 in the present embodiment incorporates a plurality of second electronic components 6.

  As a result, the number of first electronic components 2 mounted on the surface can be reduced, so that the area of the main surface of the component-embedded substrate 3 necessary for mounting the first electronic component 2 on the surface can be reduced. The built-in substrate 3 can be reduced in size.

  Further, when a plurality of holes are formed in the resin base 13, the core substrate 5 is more easily warped, but the inorganic insulating layer 14 has a smaller coefficient of thermal expansion than the resin base 13 and a Young's modulus than the resin base 13. Therefore, even if a plurality of holes H are formed in the resin base 13, it is possible to satisfactorily suppress the warpage of the core substrate 5, and as a result, the connection between the core substrate 5 and the plurality of second electronic components 6. Reliability can be improved.

  As a result, since the hole H can be formed at an arbitrary place without considering the balance of thermal expansion in the plane direction (XY plane direction) in the core substrate 5, the degree of design freedom can be improved. Design that takes into account typical characteristics.

(Production of mounting structure 1)
Next, the manufacturing method of the mounting structure 1 of the second embodiment described above will be described. In addition, description is abbreviate | omitted regarding the method similar to 1st Embodiment mentioned above.

In step (6) of the first embodiment described above, as shown in FIG. 9A, the resin base precursor 13x is provided on the main surface where the first resin precursor 15x is exposed on each of the two laminated sheets 24. The hole H is formed by laminating. Next, as shown in FIG. 9B, after the second electronic component 6 is accommodated in the hole H, the resin base precursor 13x of each laminated sheet 24 is exposed as shown in FIG. 9C. By bonding the main surfaces together and applying heat and pressure, the core substrate 5 is produced as shown in FIG.

  The present invention is not limited to the embodiments described above, and various modifications, improvements, combinations, and the like can be made without departing from the spirit of the present invention.

  Moreover, although description about the soldering resist layer was abbreviate | omitted in embodiment of this invention mentioned above, the component built-in board | substrate may have the soldering resist layer containing a resin material on the upper and lower surfaces.

  In addition, in the above-described embodiment of the present invention, description of the underfill is omitted, but an underfill may be provided between the component-embedded substrate and the electronic component.

  In the embodiment of the present invention described above, the inorganic insulating layer is formed on the wiring layer, but may be formed only on the core substrate.

  In the above-described embodiment of the present invention, the resin base layer includes the base material, but the base material may not be included.

  In the embodiment of the present invention described above, the first resin layer and the resin base layer do not contain filler particles, but may contain filler particles.

  Moreover, although embodiment of this invention mentioned above used metal foil, you may use a resin sheet instead of metal foil.

  In the first embodiment of the present invention described above, the hole is formed in the resin substrate, but the hole may be formed in the resin substrate precursor.

  In the second embodiment of the present invention described above, the hole is formed in the resin base precursor. However, the hole is formed in the resin base, and the exposed main surfaces of the resin base are bonded to each other. You may carry out through one resin layer.

  Further, in the second embodiment of the present invention described above, a plurality of holes are formed with openings formed on one main surface of the resin substrate, and the plurality of holes include through holes. It does not matter.

  In the embodiment of the present invention described above, the electrode included in the second electronic component and the via conductor are connected. However, as in the embodiment shown in FIG. 10, the second electronic component and the via conductor are connected. You may connect via a member.

DESCRIPTION OF SYMBOLS 1 Mounting structure 2 1st electronic component 3 Component built-in board 4 Bump 5 Core board 6 2nd electronic component 7 Wiring layer 8 Base | substrate 9 Conductive layer 10 Via conductor 11 Through-hole conductor 12 Insulator 13 Resin base | substrate 13x Resin base | substrate precursor 14 Inorganic insulating layer 15 First resin layer 15x First resin precursor 16 Resin base layer 16x Resin base layer precursor 17 Base resin part 18 Base material 19 First inorganic insulating particle 20 Second inorganic insulating particle 21 First resin part 21x First 1 resin material 22 first filler particles 23 metal foil 24 laminated sheet 25 laminated body G gap H hole T through hole V via hole

Claims (8)

And the electronic component, the hole is formed, and tree fat base, wherein the electronic component to the hole portion is accommodated, a pair of the inorganic insulating layer disposed on both main surfaces of the resin substrate, and the inorganic insulating layer A first resin layer disposed between the resin base and between the inorganic insulating layer and the electronic component ;
The inorganic insulating layer includes a plurality of first inorganic insulating particles connected at a part of each other, and a gap surrounded by the plurality of first inorganic insulating particles is formed,
The first resin layer includes a plurality of first filler particles made of an inorganic insulating material having a particle size larger than the width of the gap,
Content of the first filler particles, component built the first region located on the inorganic insulating layer side of the first resin layer has a size Ikoto than the second region located in the resin substrate side substrate. The component built-in substrate according to claim 1,
The hole has an opening on both main surfaces of the resin substrate through the resin substrate in the thickness direction;
The pair of inorganic insulating layers are disposed on both main surfaces of the resin base so as to cover the opening,
The component-embedded substrate, wherein the electronic component is located on one main surface of the pair of inorganic insulating layers in the hole. In the component built-in substrate according to claim 1 or 2 ,
Before Symbol A portion of the first resin layer, a substrate having built-in components, characterized in that intrudes into the gap. In the component-embedded substrate according to any one of claims 1 to 3 ,
The component-embedded substrate further comprising a via conductor that penetrates the inorganic insulating layer and the first resin layer and is electrically connected to the electronic component. In the component built-in substrate according to claim 4 ,
On the main surface of the inorganic insulating layer opposite to the electronic component, further has a conductive layer connected to the via conductor,
The via conductor has a component-embedded substrate, wherein a width of one end portion located on the electronic component side is larger than a width of the other end portion located on the conductive layer side. In the component built-in substrate according to any one of claims 1 to 5 ,
The component-embedded substrate, wherein the first resin layer further includes a plurality of second filler particles made of an inorganic insulating material having a particle size smaller than the width of the gap. In the component-embedded substrate according to any one of claims 1 to 6 ,
A component-embedded substrate, wherein a part of the first resin layer enters the hole. In the component-embedded substrate according to any one of claims 1 to 7 ,
The first resin layer is characterized in that a thickness of a portion located between the electronic component and the inorganic insulating layer is smaller than a thickness of a portion located between the resin base and the inorganic insulating layer. Component built-in board.

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