JP2013200919A5 - - Google Patents

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Publication number
JP2013200919A5
JP2013200919A5 JP2012068748A JP2012068748A JP2013200919A5 JP 2013200919 A5 JP2013200919 A5 JP 2013200919A5 JP 2012068748 A JP2012068748 A JP 2012068748A JP 2012068748 A JP2012068748 A JP 2012068748A JP 2013200919 A5 JP2013200919 A5 JP 2013200919A5
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Japan
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data
state
setting
semiconductor memory
switch
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JP2012068748A
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Japanese (ja)
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JP2013200919A (ja
JP5929398B2 (ja
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JP2012068748A 2012-03-26 2012-03-26 不揮発性半導体メモリ装置、及び、その制御方法 Active JP5929398B2 (ja)

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Application Number Priority Date Filing Date Title
JP2012068748A JP5929398B2 (ja) 2012-03-26 2012-03-26 不揮発性半導体メモリ装置、及び、その制御方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012068748A JP5929398B2 (ja) 2012-03-26 2012-03-26 不揮発性半導体メモリ装置、及び、その制御方法

Publications (3)

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JP2013200919A JP2013200919A (ja) 2013-10-03
JP2013200919A5 true JP2013200919A5 (cg-RX-API-DMAC10.html) 2015-01-15
JP5929398B2 JP5929398B2 (ja) 2016-06-08

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JP2012068748A Active JP5929398B2 (ja) 2012-03-26 2012-03-26 不揮発性半導体メモリ装置、及び、その制御方法

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JP (1) JP5929398B2 (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102250423B1 (ko) 2015-01-13 2021-05-12 삼성전자주식회사 불휘발성 메모리 시스템 및 그것의 동작 방법
US10803972B2 (en) 2017-03-06 2020-10-13 Hitachi, Ltd. Flash memory module, storage system, and method of controlling flash memory
CN115410641B (zh) * 2022-11-02 2023-03-14 合肥康芯威存储技术有限公司 一种存储系统及其测试方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09204367A (ja) * 1996-01-25 1997-08-05 Mitsubishi Electric Corp フラッシュディスクカードにおけるフラッシュメモリデータのリフレッシュ方法
JP4775969B2 (ja) * 2007-09-03 2011-09-21 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
JP4886846B2 (ja) * 2008-03-07 2012-02-29 株式会社東芝 情報処理装置および不揮発性半導体メモリドライブ
JP2012048770A (ja) * 2010-08-24 2012-03-08 Toshiba Corp 不揮発性半導体記憶装置、及び、メモリシステム

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