JP2013168604A - Manufacturing method of mold for nanoimprint - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable formation of an alignment pattern which achieves high visibility and avoids affecting the increase of a residual film in a manufacturing of a mold.SOLUTION: In a manufacturing method of a mold 1, a visible thin film 3 and a resist film 4 are formed on a surface of an uneven substrate 14 where patterns 12 and 13 are formed on the surface, and a step substrate 5 is pressed against the resist film 4 so that a portion of the resist film 4, which corresponds to a main pattern region 10, is formed into a recessed part 4a. Subsequently, the step substrate 5 is released and the resist film 4 is etched so that the resist film 4 on the region is removed, the visible thin film 3a on protruding parts of the alignment pattern 13 is exposed, and the visible thin film 3b in recessed parts of the pattern 13 is coated by the resist film 4. Then, the visible thin film 3 is etched using the resist film 4b in the recessed parts as a mask and the resist film 4b is removed.

Description

  The present invention relates to a method for producing a mold for nanoimprinting having a fine uneven pattern on the surface.

  In nanoimprinting, a mold (generally referred to as a mold, stamper, or template) in which a concavo-convex pattern is formed is pressed against the resist applied on the workpiece (imprinting), and the resist is mechanically deformed or fluidized to make fine patterns. This is a technology that precisely transfers a pattern to a resist film. Once the mold is made, it is economical because nano-level microstructures can be easily and repeatedly molded, and it is a transfer technology with little harmful waste and emissions, so it has recently been applied to various fields. Expected.

  In order to accurately transfer a pattern by nanoimprinting, it is important to align the mold and the substrate for nanoimprinting in addition to accurately forming the pattern of the mold. Therefore, an alignment pattern (alignment mark) is also formed in the mold in addition to the main pattern (a pattern corresponding to a pattern that is a pattern on the mold and is to be transferred to the workpiece). It is common.

  Since the alignment pattern is required to be visible, for example, as in Patent Documents 1 to 3, various devices have been conventionally made from the viewpoint of visibility. For example, Patent Document 1 discloses forming an alignment pattern 80 (FIG. 7 a) in which a light shielding film 81 is deposited on a pattern formation surface S (a surface along the upper surface of the convex portion of the concavo-convex structure) by a photomask method. Has been. Patent Document 2 discloses forming an alignment pattern 82 (FIG. 7b) in which a concave portion is filled with a material 83 having a refractive index of 1.7 or more from the viewpoint of improving the visibility of the alignment pattern. .

JP 2011-2859 A JP 2010-34584 A JP 2011-66238 A

  However, in the method of Patent Document 1, the alignment pattern 80 protrudes on the pattern formation surface S, and when the nanoimprint is performed, the remaining film (cannot be completely pressed during imprinting, at a position corresponding to the convex portion of the concavo-convex pattern. There is a problem that the thickness of the remaining resist film) increases. Further, Patent Document 2 discloses that a material 83 is once deposited so as to cover the alignment pattern 82, and then a portion protruding on the pattern formation surface S is cut by CMP (chemical mechanical polishing). (Paragraph 0057 of Patent Document 2), however, there is a problem that it is difficult to uniformly cut the protruding portion by CMP due to the roughness of the uneven pattern, the curvature of the mold itself, the surface roughness, and the like. If the protruding part remains on the pattern forming surface S, the remaining film increases as in the case of Patent Document 1.

  The present invention has been made in view of the above problems, and in the manufacture of a mold having an alignment pattern, a mold manufacturing method capable of forming an alignment pattern that has high visibility and does not affect the increase in the remaining film. It is intended to provide.

In order to solve the above problems, a method for producing a mold for nanoimprinting according to the present invention includes:
On the surface of the concavo-convex substrate on which the main pattern having the concavo-convex structure and the alignment pattern are formed, a visibility thin film composed of a visibility material that produces contrast in relation to the material constituting the alignment pattern is formed.
Form a resist film on the surface from above the visibility thin film,
After pressing the step substrate having a predetermined step structure against the resist film so that the portion of the resist film corresponding to the region where the main pattern is formed becomes a recess, the step substrate is released,
The resist film is removed so that the visibility thin film on the convex portion of the alignment pattern is exposed and the visibility thin film in the concave portion of the alignment pattern is covered with the resist film. Etch the
Etch the visibility thin film using the resist film remaining in the recess of the alignment pattern as a mask,
The resist film remaining in the concave portion is removed.

  In the mold manufacturing method according to the present invention, the visibility material is a metal material and a material containing at least one of an oxide, nitride, oxynitride, silicon compound, carbide, and boride of the metal material. In particular, a material containing at least one of chromium, chromium oxide and chromium nitride is preferable.

  In the mold manufacturing method according to the present invention, it is preferable that the thickness of the visibility thin film when it is formed is 2 nm or more and not more than a length corresponding to 90% of the depth of the recess of the alignment pattern.

  Further, in the mold manufacturing method according to the present invention, the concavo-convex substrate is formed by forming a resist film on the duplication substrate and using a master mold having an original pattern corresponding to the main pattern and the alignment pattern. A pattern formed by transferring a pattern onto a resist film and etching using the resist film onto which the pattern is transferred as a mask can be employed.

  In the mold manufacturing method according to the present invention, the duplication substrate preferably has a mesa shape, and preferably has a drawing-out portion on the surface opposite to the surface on which the resist film is formed.

  In the mold manufacturing method according to the present invention, a visibility thin film is formed on the surface of the concavo-convex substrate on which the main pattern and the alignment pattern are formed, and a resist film is formed on the surface from the visibility thin film. The step substrate having a predetermined step structure is pressed against the resist film so that a portion of the resist film corresponding to the region where the main pattern is formed becomes a recess, and then the step substrate is released, As the resist film is removed, the resist film is etched so that the visibility thin film on the convex portion of the alignment pattern is exposed and the visibility thin film in the concave portion of the alignment pattern is covered with the resist film, Etching the visibility thin film using the resist film remaining in the recess of the alignment pattern as a mask, and removing the resist film remaining in the recess And features. Thereby, only the recessed part of an alignment pattern can be filled with a visibility material, and the visibility thin film on a pattern formation surface can fully be removed by an etching. As a result, in the manufacture of a mold having an alignment pattern, it is possible to form an alignment pattern that has high visibility and does not affect the increase in the remaining film.

It is the schematic which shows the structure of the mold manufactured by the manufacturing method of embodiment. It is a schematic sectional drawing which shows the structure of the mold in the A-A 'cross section of FIG. It is a schematic sectional drawing which shows the process of the manufacturing method of embodiment. It is a schematic sectional drawing which shows the process of the manufacturing method of embodiment. It is a schematic sectional drawing which shows the process of the manufacturing method of the uneven | corrugated board | substrate used in embodiment. It is a schematic sectional drawing which shows the cross-sectional structure of another mold and the substrate for duplication. It is a schematic sectional drawing which shows the conventional alignment pattern.

  Hereinafter, although an embodiment of the present invention is described using a drawing, the present invention is not limited to this. In addition, for easy visual recognition, the scale of each component in the drawings is appropriately changed from the actual one.

“First Embodiment of Mold Manufacturing Method”
According to the manufacturing method of the present embodiment, for example, a nanoimprint mold 1 with an alignment pattern as shown in FIG. 1 is manufactured. FIG. 1 is a schematic view showing a configuration of a mold manufactured by the manufacturing method of the embodiment, and FIG. 2 is a schematic cross-sectional view showing a configuration of the mold in the AA ′ cross section of FIG.

  The mold 1 is mainly composed of a concavo-convex substrate 14 serving as a main body of the mold and a visibility thin film 15.

  The uneven substrate 14 has, for example, a main pattern region 10 at the center of one surface thereof and four alignment pattern regions 11 around the main pattern region 10. The main pattern region 10 is a region on the surface of the uneven substrate 14 on which the main pattern 12 is formed, and the alignment pattern region 11 is a region on the surface of the uneven substrate 14 on which the alignment pattern 13 is formed. The main pattern 12 and the alignment pattern 13 (hereinafter also referred to simply as a pattern) are formed by, for example, an electron beam lithography method or a nanoimprint method. The material of the uneven substrate 14 is, for example, silicon, silicon oxide, aluminum oxide, quartz glass, Pyrex (registered trademark) glass, soda glass, or the like. The two-dimensional shape of the concavo-convex substrate 14 in plan view is not particularly limited and is rectangular in FIG. 1, but may be disk-shaped.

  The main pattern 12 has a concavo-convex structure, for example, a line & space pattern. The main pattern 12 may have a structure in which other dot-like or elongated protrusions are arranged. In the main pattern 12, the length of the convex portion, the width of the convex portion, the interval between the convex portions, and the height of the convex portion from the bottom surface of the concave portion (the depth of the concave portion) are appropriately set according to the pattern to be transferred. . For example, the width of the convex portion is 10 to 100 nm, the interval between the convex portions is 10 to 500 nm, and the height of the convex portion is 10 to 500 nm.

  The alignment pattern 13 is a mark for aligning the mold 1 with the substrate to be processed when nanoimprinting is performed. The alignment pattern 13 also has a concavo-convex structure, and is, for example, a line and space pattern for alignment by moire interferometry or a cross pattern. Also in the alignment pattern 13, the length of the convex portion, the width of the convex portion, the interval between the convex portions, and the height of the convex portion from the bottom surface of the concave portion are appropriately set within the same range as in the case of the main pattern 12.

  The visibility thin film 15 is made of a visibility material that produces a contrast in relation to the material constituting the alignment pattern 13, and is arranged (filled) only in the recesses of the alignment pattern 13. “Contrast” means that the two material parts can be visually distinguished (including microscopic observation). Since the visibility thin film 15 is filled only in the concave portions of the alignment pattern 13, the concave portions and the convex portions of the alignment pattern 13 are distinguished from each other and easily recognized visually. Thereby, the visibility of the alignment pattern 13 is improved.

  The visibility material is not particularly limited, but from the viewpoint of improving visibility, the visibility material may be a material containing at least one of a metal material and an oxide, nitride, oxynitride, silicon compound, carbide, and boride of the metal material. preferable. The visibility material is a material that contains at least one of chromium (Cr), chromium oxide (CrOx) and chromium nitride (CrN), as well as MoSiN compounds, MoSiON compounds, TaSiOx compounds, TaCr compounds, ZrSiOx compounds, and TiN compounds. It is preferable. If chromium, chromium oxide, chromium nitride, or the like, which is conventionally known as a hard mask, is used, the visibility thin film can be formed with existing equipment at low cost. When there are a plurality of visibility materials, the visibility thin film 15 may have a structure in which those materials are mixed, or a laminated structure in which layers composed of the respective materials are stacked. Also good.

  And the manufacturing method of the mold 1 of this embodiment is demonstrated. 3 and 4 are schematic cross-sectional views showing the steps of the manufacturing method of this embodiment.

  As shown in FIGS. 3 and 4, the method for manufacturing the mold 1 of the present embodiment prepares a concavo-convex substrate 14 having a main pattern 12 and an alignment pattern 13 formed on the surface (FIG. 3 a), and the concavo-convex substrate 14. A visibility thin film 3 made of a visibility material is formed on the surface (FIG. 3b), and a resist film 4 is formed on the surface from the visibility thin film 3 (FIG. 3c). After the step substrate 5 having a predetermined step structure is pressed against the resist film 4 so that the portion of the resist film corresponding to 10 becomes the recess 4a, the step substrate 5 is released (FIG. 3d), and the main pattern region 10 is removed, the visibility thin film 3a on the convex portion of the alignment pattern 13 is exposed, and the visibility thin film 3b in the concave portion of the alignment pattern 13 is a resist film. The resist film 4 is etched so as to be covered with b (FIG. 4e), and the visibility thin film 3 is etched using the resist film 4b remaining in the recesses of the alignment pattern 13 as a mask (FIG. 4f). The remaining resist film 4b is removed by etching (FIG. 4g).

  The visibility thin film 3 is formed by depositing a visibility material by, for example, a vacuum deposition method or a sputtering method. The thickness of the visibility thin film 3 is set to a length corresponding to the depth of the concave portion of the alignment pattern 13, that is, a thickness that just fills the entire concave portion. This is to realize a state in which the visibility thin film 3 a on the convex portion of the alignment pattern 13 is exposed and the visibility thin film 3 b in the concave portion of the alignment pattern 13 is covered with the resist film 4 in a process described later.

  Further, from the viewpoint of ensuring visibility, the thickness of the visibility thin film 3 when the film is formed is preferably 2 nm or more. The thickness of the visibility thin film 3 when the film is formed is preferably not more than a length corresponding to 90% of the depth of the concave portion of the alignment pattern 13. This is because, in the step of etching the visibility thin film 3 using the resist film 4b remaining in the recesses of the alignment pattern 13 as a mask (FIG. 4f), the alignment pattern 13 is visible even when the resist film 4b cannot withstand the etching. This is to ensure the sex. The etching selectivity of a metal material (for example, chromium) to a general resist material can be adjusted to about 3 at the maximum. For example, assuming that the film thicknesses of the visibility thin films 3a and 3b are the same, and assuming that the selection ratio is 3, when the depth of the concavo-convex pattern is 100D, the thickness of the visibility thin film of thickness 25D is 25D. In the case where a resist film is present, the visibility thin film 3a on the convex portion and the resist film 4b in the concave portion are simultaneously removed. The thickness of the visibility thin film 3 at this time is 75% of the depth (= 75D / 100D). However, since the visibility thin film 3 only needs to remain visible to the end, even if the visibility thin film 3b is slightly etched in the step (4f), there is no problem in solving the problem in the present invention. When the thickness of the visibility thin film 3 is 90D (90% of the depth), the portion of the visibility thin film 3a having a thickness of 30D is etched while the resist film 4b having a thickness of 10D is etched. Is done. While the remaining thickness 60D portion of the visibility thin film 3a is etched, the thickness 60D portion of the visibility thin film 3b is etched, and finally the remaining thickness of the visibility thin film 3b. The 30D part remains. Considering that the depth of the concave portion of the concave / convex pattern is generally 10 nm or more, 3 nm is ensured as the final thickness of the visibility thin film 3 according to the above calculation. However, since the thickness of the visibility thin films 3a and 3b may not be the same or the above selection ratio may not be sufficiently ensured, the film formation of the visibility thin film 3 is ensured to ensure the visibility. The thickness at the time is more preferably not more than a length corresponding to 80% of the depth, and particularly preferably not more than a length corresponding to 70%. In particular, considering the actually set depth of the recesses of the alignment pattern 13, the thickness of the visibility thin film 3 is more preferably 3 to 15 nm, and particularly preferably 4 to 10 nm.

  The resist film 4 is formed by, for example, applying a resist material for imprinting on the visibility thin film 3 by a spin coat method or an ink jet method. As the material of the resist film 4, since the visibility thin film 3 and the resist film 4 are alternately etched later, it is preferable to select a material that easily ensures the etching selectivity in relation to the visibility material.

  The pressing of the stepped substrate 5 is performed by pressing the surface having the stepped portion 5 a that is the convex portion of the stepped substrate 5 against the resist film 4. At this time, alignment is performed so that the stepped portion 5 a faces the main pattern region 10. The contour (two-dimensional shape) defined by the step boundary portion of the step portion 5a is formed in advance in consideration of the shape of the main pattern region 10 and the arrangement of the alignment pattern region 11. Therefore, by this pressing step, only the portion of the resist film 4 corresponding to a predetermined region including the main pattern region 10 and not including the alignment pattern region 11 is pressed by the step portion 5a to become the recess 4a. The material of the step substrate 5 is not particularly limited. The “corresponding portion of the resist film” on a predetermined region on the surface of the concavo-convex substrate is projected onto the region when viewed so as to project the resist film on the pattern formation surface of the concavo-convex substrate. It means the part of the resist film. In addition, the resist film portion “becomes a recess” means that the thickness of the resist film in the portion is thinner than the portion of the resist film not pressed by the step portion of the step substrate. The portion of the resist film that becomes the recess may include a peripheral portion of the portion of the resist film corresponding to the main pattern region 10 as long as the portion of the resist film corresponding to the alignment pattern region 11 is not included.

  Ideally, the height H3 of the stepped portion 5a is such that the visibility thin film 3a on the convex portion of the alignment pattern 13 is exposed and the visibility thin film 3b in the concave portion of the alignment pattern 13 is exposed to the resist film 4b. This corresponds to the maximum film thickness of the resist film 4b when the covered state is realized. Accordingly, the height H3 of the stepped portion 5a may be set to a height obtained by subtracting the thickness H2 of the visibility thin film 3 from the depth H1 of the concave portion of the alignment pattern 13. Note that the height of H1-H2 is a guide only, and the height H3 of the stepped portion 5a may be higher or lower than the height of H1-H2. By adjusting the etching amount in the etching process of the first resist film 4 when it is high, and by sufficiently ensuring the etching selection ratio when it is low, the predetermined state is realized in the process described later. Because you can.

  The first etching of the resist film 4 is performed by, for example, reactive ion etching. The etching gas G1 is adjusted using an oxygen-based gas, for example, so that the etching selectivity of the resist film 4 with respect to the visibility thin film 3 is increased. “The resist film 4 on the main pattern region 10 is removed” means that the visibility thin film 3 on the convex portion and the visibility thin film 3 in the concave portion in the main pattern region 10 are exposed. That is, the resist film 4b remains only in the recesses of the alignment pattern 13 by this etching process.

  Similarly, the etching of the visibility thin film 3 is performed by, for example, reactive ion etching. For example, when the visibility thin film 3 is a chromium thin film, the etching gas G2 is adjusted using a chlorine-based gas so that the etching selectivity of the visibility thin film 3 to the resist film 4 is increased. In this step, since the resist film 4b remaining in the recesses of the alignment pattern 13 functions as a mask, the visibility thin film 3 on the pattern formation surface S is removed, but the visibility in the recesses covered with the resist film 4b is removed. The conductive thin film 3b remains as it is. When the visibility thin film 3 is removed by etching, the etching gas can reach the visibility thin film 3 on the pattern forming surface S evenly. Therefore, according to the present invention, the visibility thin film 3 on the pattern forming surface S can be sufficiently removed without being affected by the density of the uneven pattern, the curvature of the uneven substrate 14 and the surface roughness thereof.

  The mold 1 is manufactured by removing the resist film 4 remaining in the recesses of the alignment pattern 13 by the second etching of the resist film. Note that the etching gas G3 may be the same as or different from the etching gas G1. In this embodiment, the resist film 4b is removed by etching, but the removal of the resist film 4b is not necessarily performed by etching.

“Second Embodiment of Mold Manufacturing Method”
Next, a second embodiment of the mold manufacturing method will be described. This embodiment is different from the first embodiment in that it starts from the formation of the uneven substrate 14. Therefore, a detailed description of the same configuration as that of the first embodiment is omitted unless particularly necessary.

  FIG. 5 is a schematic cross-sectional view showing the steps of the method for manufacturing the concavo-convex substrate 14 used in the first embodiment.

  In the mold manufacturing method of the present embodiment, a resist film 61 is formed on a duplication substrate 60, and a master mold 62 having original patterns 12a and 13a corresponding to the main pattern and the alignment pattern (including inverted patterns) is prepared. The main pattern and the alignment pattern are transferred to the resist film 61 (FIG. 5a), and the concavo-convex substrate 14 is formed by etching with the etching gas G4 using the resist film 61 to which the pattern is transferred as a mask (FIG. 5b and FIG. 5). 5c) After that, the process of the first embodiment is performed using the uneven substrate 14. That is, the mold manufactured by the manufacturing method of this embodiment is a duplicate (replica) of the master mold 62.

  The substrate 60 is a base of the concavo-convex substrate 14, and the material of the resist film 61 is not particularly limited, and a general photo-curing resin or thermosetting resin can be used.

  The master mold 62 has an original pattern composed of a pattern 12 a corresponding to the main pattern 12 and a pattern 13 a corresponding to the alignment pattern 13. The original patterns 12a and 13a are simultaneously formed by the electron beam lithography method. The material of the master mold 62 is, for example, silicon, silicon oxide, aluminum oxide, quartz glass, Pyrex (registered trademark) glass, soda glass, or the like.

  In the nanoimprint method, the same mold can be used repeatedly, but the mold deteriorates according to the number of repetitions. For this reason, it is necessary to prepare a plurality of molds having the same pattern, for example, in the field of manufacturing semiconductor devices. However, since patterning by electron beam lithography takes time, it is very inefficient to manufacture molds by patterning one by one by electron beam lithography. Therefore, after obtaining the master mold 62 patterned by electron beam lithography as in the present embodiment, a mold having the same pattern can be manufactured at a low cost by producing a duplicate plate by the nanoimprint method based on the master mold 62. Can be obtained in large quantities.

(Design changes)
Although the case where the etching is dry etching has been described in the above embodiment, the etching is not necessarily limited to this in the present invention, and wet etching can also be used. In addition, a cleaning process for a substrate or the like can be appropriately added in a desired process.

  In the second embodiment, instead of the substrate 60, a mesa substrate 70 having a punched-out portion 79 on the surface opposite to the surface on which the resist film is formed as shown in FIG. 6a can be used. The mesa-type substrate refers to a substrate having a plateau (mesa) structure 76 as shown in FIG. 6A, for example. In FIG. 6 a, a registration mark 78 for positioning with the master mold is provided on the flange portion 74. The punched-out portion 79 is manufactured, for example, by removing the surface opposite to the surface on which the resist film is formed (the surface on which the pattern is formed) by an etching method or the like.

  Then, by using the mesa substrate 70 to obtain the same process as in the second embodiment, the mesa mold 2 as shown in FIG. 6b can be manufactured. The mold 2 has a main pattern region 20 and an alignment pattern region 21 in the mesa portion 26, and a main pattern 22 and an alignment pattern 23 are formed in the main pattern region 20 and the alignment pattern region 21, respectively. A visibility thin film 25 is disposed in the recess of the alignment pattern 23. Further, the mold 2 has a structure in which a punched portion 29 is provided on the surface opposite to the surface on which the pattern is formed. Further, a registration mark 28 is provided on the flange portion 24. Further, from the viewpoint of improving the visibility of the registration mark 28, it is preferable to form a chromium thin film on the upper surface of the registration mark 28. Note that the registration mark 28 may be omitted. Since the alignment accuracy between the mesa mold substrate 70 and the master mold does not have to be so high, alignment can be performed using, for example, the outline of the mesa portion.

  When such a mesa mold 2 is used, when the mold is pressed against the resist applied on the work piece, the space around the mesa portion 26 becomes a escape space for the resist to flow. The flow range can be limited, and the force for peeling the mold 2 from the resist can be small. In addition, when a substrate is processed into a mesa shape after the pattern is formed on the surface, there is a problem that the pattern is damaged during the processing, but this problem is solved by forming the pattern on the mesa substrate. The

  Further, when the mold 2 has the punched-out portion 29, when the mold 2 is peeled from the resist, stress is applied to a portion near the punched-out portion 29 due to the adhesion force of the resist and the mold 2 and the peeling force acting in the peeling direction. As a result, the mold 2 itself is curved. For this reason, since the peeling force concentrates on the periphery of the interface between the resist and the mold 2, the peeling can be started with a smaller force than before. And as peeling progresses, the peeling force works efficiently from the surroundings to the center, so that the peelability is improved.

  In addition, the mold should just have any one of the characteristics that it has a mesa structure, and the feature which has a drawing-out part.

  The production method of the present invention can be applied to the production of semiconductor devices such as transistors and magnetic recording media such as hard disks.

1, 2 Mold 3 Visible thin film 4 Resist film 5 Stepped substrate 5a Stepped portion 10, 20 Main pattern region 11, 21 Alignment pattern region 12, 22 Main pattern 13, 23 Alignment pattern 14 Uneven substrate 15, 25 Visible thin film 24 Flange Part 26 mesa part 28 registration mark 29 drawing-out part 60 substrate for duplication 61 resist film 62 master mold 70 mesa type substrate 80, 82 alignment pattern S in the prior art pattern formation surface

Claims (7)

On the surface of the concavo-convex substrate on which the main pattern having the concavo-convex structure and the alignment pattern are formed, a visibility thin film composed of a visibility material that produces contrast in relation to the material constituting the alignment pattern is formed. ,
Forming a resist film on the surface from above the visibility thin film;
After pressing the step substrate having a predetermined step structure against the resist film so that the portion of the resist film corresponding to the region where the main pattern is formed becomes a recess, the step substrate is released,
The resist film on the region is removed, the visibility thin film on the convex portion of the alignment pattern is exposed, and the visibility thin film in the concave portion of the alignment pattern is covered with the resist film; Etching the resist film so that
Etching the visibility thin film with the resist film remaining in the recesses of the alignment pattern as a mask,
A method for producing a mold for nanoimprint, wherein the resist film remaining in the recess is removed.   2. The nanoimprint according to claim 1, wherein the visibility material is a metal material and a material including at least one of an oxide, nitride, oxynitride, silicon compound, carbide, and boride of the metal material. Method for manufacturing mold.   The method for producing a mold for nanoimprinting according to claim 2, wherein the visibility material is a material containing at least one of chromium, chromium oxide, and chromium nitride.   The thickness for forming the visibility thin film is 2 nm or more and not more than a length corresponding to 90% of the depth of the recess of the alignment pattern. Mold manufacturing method.   The concavo-convex substrate forms a resist film on a substrate for duplication, and the master pattern having an original pattern corresponding to the main pattern and the alignment pattern is used to transfer the main pattern and the alignment pattern to the resist film. 5. The method for producing a nanoimprint mold according to claim 1, wherein the mold is formed by etching using the resist film to which the pattern is transferred as a mask. 6.   The method for producing a mold for nanoimprint according to claim 5, wherein the multi-print substrate has a mesa shape.   The method for producing a mold for nanoimprinting according to claim 5 or 6, wherein the multi-print substrate has a punched portion on a surface opposite to a surface on which the resist film is formed.

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