JP2013168556A - Method of manufacturing electronic device, electronic device, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing an electronic device capable of increasing airtightness of a space containing an electronic component.SOLUTION: A method of manufacturing an electronic device 100 comprises: a step of preparing an electronic component 40 and a substrate 10 including a through hole 16a; a step of integrally forming a mounting electrode 20a on one main surface 12 of the substrate 10, a packaged electrode 22a on the other main surface 14 of the substrate 10, and a penetrating electrode 24a in the through hole 16a by means of plating; and a step of mounting an electronic component 40 on the substrate 10.

Description

  The present invention relates to an electronic device manufacturing method, an electronic device, and an electronic apparatus.

  As an electronic device, for example, a piezoelectric device configured to include an electronic component such as a piezoelectric vibration element, a package substrate on which the electronic component is mounted, and a lid is known. An electronic component such as a piezoelectric vibration element is hermetically sealed in a space surrounded by the package substrate and the lid. Therefore, in such an electronic device, wiring (electrode) for electrically connecting an electronic component housed in the space and an external device outside the space is provided.

  For example, in Patent Document 1, a paste for mounting a piezoelectric vibration element, a conductive paste serving as an external connection electrode, etc. is applied to the surface of a ceramic green sheet by screen printing, and punched into the ceramic green sheet. The element mounting member (package substrate) is applied by applying a conductor paste to be a via conductor in a through hole that has been drilled in advance, laminating a plurality of the pastes, press-molding, and firing. An electronic device manufacturing method for forming a wiring (electrode) for connecting a piezoelectric vibration element and an external device is disclosed.

JP 2010-278805 A

  However, the method of manufacturing an electronic device disclosed in Patent Document 1 has a problem that it is difficult to ensure the airtightness of a space that accommodates an electronic component such as a piezoelectric vibration element. Specifically, for example, the interface formed by laminating the conductor base and the porous portion of the conductor paste may become a leakage path, which may reduce the airtightness of the space that houses the electronic component. In addition, moisture, gas, or the like remaining at the interface during the manufacturing process may reduce the airtightness of the space that houses the electronic component.

  One of the objects according to some aspects of the present invention is to provide an electronic device manufacturing method and an electronic device capable of improving the airtightness of a space for accommodating an electronic component. Another object of some aspects of the present invention is to provide an electronic apparatus including the electronic device.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following aspects or application examples.

[Application Example 1]
An electronic device manufacturing method according to this application example is as follows:
Preparing an electronic component and a substrate having a through hole;
A step of integrally forming a mounting electrode on one main surface of the substrate, a mounting electrode on the other main surface of the substrate, and a through electrode in the through hole by plating;
Mounting the electronic component on the substrate;
including.

  According to such an electronic device manufacturing method, the mounting electrode, the mounting electrode, and the through electrode can be integrally formed, so that the airtightness of the space that houses the electronic component can be improved. Therefore, a highly reliable electronic device can be obtained. Furthermore, since the mounting electrode, the mounting electrode, and the through electrode can be formed in the same process, the manufacturing process can be simplified.

[Application Example 2]
In the method for manufacturing an electronic device according to this application example,
The step of forming the mounting electrode, the mounting electrode, and the through electrode,
Forming a resist layer on the one main surface and the other main surface;
Forming a conductive layer in the one main surface, the other main surface, and the through hole by the plating; and
Removing the resist layer;
May be included.

  According to such an electronic device manufacturing method, the mounting electrode, the mounting electrode, and the through electrode can be integrally formed. Furthermore, the mounting electrode, the mounting electrode, and the through electrode can be formed in the same process.

[Application Example 3]
In the method for manufacturing an electronic device according to this application example,
The step of forming the mounting electrode, the mounting electrode, and the through electrode,
Before the step of forming the resist layer, forming a seed layer serving as a plating nucleus;
Etching the seed layer after removing the resist layer;
May be included.

  According to such an electronic device manufacturing method, the mounting electrode, the mounting electrode, and the through electrode can be integrally formed. Furthermore, the mounting electrode, the mounting electrode, and the through electrode can be formed in the same process.

[Application Example 4]
In the method for manufacturing an electronic device according to this application example,
The through hole may include a portion in which the hole size on the other main surface side is smaller than that on the one main surface side.

  According to such an electronic device manufacturing method, it is possible to prevent voids from being formed in the conductive layer formed in the through hole. Thereby, the airtightness of the space in which the electronic component is accommodated can be improved.

[Application Example 5]
In the method for manufacturing an electronic device according to this application example,
The substrate may be a single layer ceramic.

  According to such a method for manufacturing an electronic device, the mounting electrode, the mounting electrode, and the through electrode can be formed with high accuracy. For example, when a substrate is formed by applying a conductive paste that serves as an electrode to a ceramic green sheet by screen printing, etc., and laminating and firing a plurality of these, the ceramic green sheet shrinks due to firing, so the electrode is accurately Cannot be formed. On the other hand, since single-layer ceramics have small shrinkage, the mounting electrode, the mounting electrode, and the through electrode can be formed with high accuracy. That is, since the mounting electrode, the mounting electrode, and the through electrode can be formed by photolithography after firing the ceramic substrate, it is not necessary to perform firing after forming these electrodes, and these electrodes are formed accurately. be able to. Furthermore, since it is a single layer, the number of steps can be reduced and the material can be reduced as compared with the case of a multilayer. In addition, since it is a single layer, there is no leakage between layers, and airtightness can be improved.

[Application Example 6]
In the method for manufacturing an electronic device according to this application example,
The step of forming the mounting electrode, the mounting electrode, and the through electrode,
You may form the junction part for connecting with a cover body in said one main surface simultaneously with the said mounting electrode, the said mounting electrode, and the said penetration electrode.

  According to such an electronic device manufacturing method, the manufacturing process can be simplified.

[Application Example 7]
The electronic device according to this application example is
A substrate having a through hole;
A mounting electrode provided on one main surface of the substrate;
A mounting electrode provided on the other main surface of the substrate;
A through electrode provided in the through hole and electrically connected to the mounting electrode and the mounting electrode;
An electronic component joined to the mounting electrode;
With
The mounting electrode, the mounting electrode, and the through electrode are integrated.

  According to such an electronic device, the airtightness of the space for accommodating the electronic component can be enhanced. Therefore, it can have high reliability.

[Application Example 8]
The electronic device according to this application example is
The electronic device which concerns on this application example is included.

  According to such an electronic apparatus, since the electronic device according to the application example is included, high reliability can be obtained.

FIG. 2 is a plan view schematically showing the electronic device according to the embodiment. FIG. 3 is a cross-sectional view schematically showing the electronic device according to the embodiment. FIG. 3 is a cross-sectional view schematically showing the electronic device according to the embodiment. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on this embodiment. Sectional drawing which shows the mode of the growth of a 2nd layer typically. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on a 1st modification. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on a 1st modification. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on a 1st modification. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on a 1st modification. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on a 2nd modification. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on a 2nd modification. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on a 1st modification. The perspective view which shows typically the electronic device which concerns on this embodiment. The perspective view which shows typically the electronic device which concerns on this embodiment. 1 is a diagram schematically illustrating an electronic apparatus according to an embodiment.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. The embodiments described below do not unduly limit the contents of the present invention described in the claims. In addition, not all of the configurations described below are essential constituent requirements of the present invention.

1. Electronic Device First, an electronic device according to the present embodiment will be described with reference to the drawings. FIG. 1 is a plan view schematically showing an electronic device 100 according to this embodiment. 2 and 3 are cross-sectional views schematically showing the electronic device 100 according to the present embodiment. 2 is a cross-sectional view taken along the line II-II in FIG. 1, and FIG. 3 is a cross-sectional view taken along the line III-III in FIG. Moreover, in FIG. 1, illustration of the cover body 30 and the joining member 36 is abbreviate | omitted for convenience.

  1 to 3, the electronic device 100 includes a package substrate (substrate) 10, surface electrodes (mounting electrodes) 20a and 20b, back surface electrodes (mounting electrodes) 22a and 22b, and through electrodes 24a and 24b. And the lid 30 and the electronic component 40. The electronic device 100 is configured to further include, for example, a joining portion 26, a joining member 36, and adhesives 50a and 50b.

  The package substrate 10 is a flat plate member made of ceramics (for example, alumina), for example. The package substrate 10 is, for example, a single layer ceramic. The material of the package substrate 10 is not limited to ceramics, and may be quartz, glass, or silicon. On one main surface (first main surface) 12 of the package substrate 10, surface electrodes 20 a and 20 b and a joint portion 26 are provided. On the other main surface (second main surface) 14 of the package substrate 10, back surface electrodes 22 a and 22 b are provided. The package substrate 10 and the lid 30 constitute a package for housing the electronic component 40.

  The package substrate 10 has a first through hole 16 a and a second through hole 16 b that penetrate the package substrate 10. A first through electrode 24a is provided in the first through hole 16a, and a second through electrode 24b is provided in the second through hole 16b. The through holes 16 a and 16 b extend from one main surface (first main surface) 12 of the package substrate 10 to the other main surface (second main surface) 14. The through holes 16 a and 16 b include a portion in which the hole size (hole diameter) on the other main surface (second main surface) 14 side is smaller than the one main surface (first main surface) 12 side of the package substrate 10. . In the illustrated example, the through holes 16a and 16b have a tapered shape with a diameter that decreases from one opening toward the other opening. More specifically, each of the through holes 16a and 16b has a tapered shape whose diameter decreases from the opening on the first main surface 12 side toward the opening on the second main surface 14 side.

  The first surface electrode 20 a and the second surface electrode 20 b are provided on the first main surface 12 of the package substrate 10. On the surface electrodes 20a and 20b, the electronic component 40 is joined via adhesives 50a and 50b. The first surface electrode 20a is electrically connected to the first mount electrode 48a of the electronic component 40 via a conductive adhesive 50a. The second surface electrode 20b is electrically connected to the second mount electrode 48b of the electronic component 40 via a conductive adhesive 50b.

  The surface electrodes 20a and 20b are composed of, for example, a single layer or multiple conductive layers. In the example shown in FIGS. 2 and 3, the surface electrodes 20 a and 20 b include the first layer 2, the second layer 4, and the third layer 6. The first layer 2 has, for example, a stacked structure in which chromium (Cr) and copper (Cu) are stacked in this order. Note that an alloy of titanium and tungsten (TiW) may be used instead of chromium. The second layer 4 is, for example, a single layer of copper (Cu). The third layer 6 has a laminated structure in which, for example, nickel (Ni) and gold (Au) are laminated in this order. In addition, the material and layer structure of each layer 2, 4, 6 are not limited to the above-mentioned example. For example, a base electrode made of palladium (Pd) may be provided instead of the first layer 2. At this time, the second layer 4 may have a laminated structure in which, for example, nickel (Ni) and gold (Au) are laminated in this order, or copper (Cu), nickel (Ni), gold ( Au) may have a stacked structure in which the layers are stacked in this order. Further, for example, the first layer 2 and the third layer 6 may be omitted.

  The first back electrode 22 a and the second back electrode 22 b are provided on the second main surface 14 of the package substrate 10. The first back electrode 22a is electrically connected to the first surface electrode 20a via the first through electrode 24a. The second back electrode 22b is electrically connected to the second surface electrode 20b through the second through electrode 24b. The back electrodes 22a and 22b can function as external terminals used when mounted on an external device (not shown). The back electrodes 22a and 22b are composed of a single layer or a plurality of conductive layers as in the case of the front electrodes 20a and 20b. In the illustrated example, the first layer 2, the second layer 4, the third layer 6, It is comprised including.

  The first through electrode 24a is provided in the first through hole 16a. The first through electrode 24a electrically connects the first front electrode 20a and the first back electrode 22a. The second through electrode 24b is provided in the second through hole 16b. The second through electrode 24b electrically connects the second front electrode 20b and the second back electrode 22b. The through-electrodes 24a and 24b are composed of, for example, a single layer or a plurality of conductive layers. In the illustrated example, the through-electrodes 24a and 24b include the first layer 2 and the second layer 4.

  The first surface electrode 20a, the first back electrode 22a, and the first through electrode 24a are integrally provided. That is, the first through electrode 24a is provided continuously with the first front electrode 20a and the first back electrode 22a. Therefore, there is no interface (joint) between the first surface electrode 20a and the first through electrode 24a and between the first through electrode 24a and the first back electrode 22a. In the illustrated example, the second layer 4 of the first through electrode 24a is continuous with the second layer 4 of the first surface electrode 20a and the second layer 4 of the first back electrode 22a, whereby the first surface electrode 20a, the 1st back electrode 22a, and the 1st penetration electrode 24a are provided in one.

  The second surface electrode 20b, the second back electrode 22b, and the second through electrode 24b are integrally provided. That is, the second through electrode 24b is provided continuously with the second front electrode 20b and the second back electrode 22b. Therefore, there is no interface (a joint) between the second surface electrode 20b and the second through electrode 24b and between the second through electrode 24b and the second back electrode 22b. In the illustrated example, the second surface electrode is formed by the second layer 4 of the second through electrode 24b being continuous with the second layer 4 of the second surface electrode 20b and the second layer 4 of the second back electrode 22b. 20b, the 2nd back electrode 22b, and the 2nd penetration electrode 24b are provided in one.

  The joint portion 26 is provided on the first main surface 12 of the package substrate 10. As shown in FIG. 1, the joint portion 26 is provided so as to surround the electronic component 40. The joint portion 26 is a member for joining the lid 30 and the package substrate 10 together. The joint portion 26 is composed of a single layer or a plurality of conductive layers like the electrodes 20a, 20b, 22a, and 22b, and in the illustrated example, the first layer 2, the second layer 4, the third layer 6, , Including.

  The lid body 30 has a cap shape (container shape) in which a collar portion 32 is provided on the entire circumference, and the electronic component 40 can be accommodated in a space 34 inside thereof. The lid 30 functions as a package that hermetically seals the electronic component 40 together with the package substrate 10. The collar portion 32 is bonded to the package substrate 10 via the bonding member 36 and the bonding portion 26. The material of the lid 30 is, for example, a metal such as Kovar, 42 alloy, stainless steel.

  Here, the case where the lid body 30 has a cap-like (container-like) shape and the electronic component 40 is accommodated in the inner space 34 has been described, but the package substrate 10 has a recess. The electronic component 40 may be accommodated in the recess. In this case, the shape of the lid 30 may be a flat plate shape.

  The joining member 36 can fix (join) the lid 30 to the joining portion 26. The joining member 36 is provided at least between the flange portion 32 of the lid body 30 and the joining portion 26. In the illustrated example, the joining member 36 is provided on the collar portion 32 of the lid body 30 and the inner surface of the lid body 30. As the joining member 36, for example, a brazing material such as silver brazing or nickel brazing can be used.

  The electronic component 40 is mounted on the package substrate 10. The electronic component 40 is joined to the surface electrodes 20a and 20b by adhesives 50a and 50b. The electronic component 40 is accommodated in a space 34 surrounded by the package substrate 10 and the lid 30. For example, the space 34 is in a decompressed state or a state filled with an inert gas such as nitrogen, and the electronic component 40 operates in a decompressed state or a state filled with an inert gas such as nitrogen. Examples of the form of the electronic component 40 include various electronic components such as a gyro sensor, an acceleration sensor, a vibrator, and a SAW (surface acoustic wave) element.

  Below, the case where the electronic component 40 is a vibrator | oscillator is demonstrated. The electronic component 40 includes a piezoelectric vibrating piece 42, excitation electrodes 44a and 44b, connection electrodes 46a and 46b, and mount electrodes 48a and 48b.

  The piezoelectric vibrating piece 42 is made of a quartz substrate such as an AT cut quartz substrate or a BT cut quartz substrate. The piezoelectric vibrating piece 42 has a mesa structure as shown in FIG. Thereby, it can have a high energy confinement effect.

  The first excitation electrode 44 a is provided on one main surface (excitation surface, upper surface in the illustrated example) of the piezoelectric vibrating piece 42. The first excitation electrode 44a is connected to the first mount electrode 48a via the first connection electrode 46a. The second excitation electrode 44 b is provided on the other main surface (excitation surface, lower surface in the illustrated example) of the piezoelectric vibrating piece 42. The second excitation electrode 44b is connected to the second mount electrode 48b via the second connection electrode 46b. The excitation electrodes 44 a and 44 b can apply a voltage to the piezoelectric vibrating piece 42.

  The adhesives 50 a and 50 b can fix (join) the electronic component 40 to the package substrate 10. In the illustrated example, the adhesive 50 a joins the first mount electrode 48 a of the electronic component 40 and the first surface electrode 20 a provided on the package substrate 10. The adhesive 50 b joins the second mount electrode 48 b of the electronic component 40 and the second surface electrode 20 b provided on the package substrate 10. As the adhesives 50a and 50b, conductive adhesives can be used. Specifically, for example, a silver paste can be used as the adhesives 50a and 50b.

  The electronic device 100 according to the present embodiment has, for example, the following characteristics.

  In the electronic device 100, the first surface electrode 20a, the first back electrode 22a, and the first through electrode 24a are integrally provided. Further, the second surface electrode 20b, the second back electrode 22b, and the second through electrode 24b are integrally provided. Therefore, the airtightness of the space 34 that houses the electronic component 40 can be enhanced. Therefore, reliability can be improved. For example, when the front electrode, the back electrode, and the through electrode are not provided integrally, an interface is formed between the front electrode and the through electrode and between the through electrode and the back electrode. This interface may be a leakage path, which may reduce the airtightness of the space that houses the electronic component. In addition, moisture, gas, and the like remaining at the interface during the manufacturing process may reduce the airtightness of the space that houses the electronic component. On the other hand, according to the electronic device 100, since the 1st surface electrode 20a, the 1st back surface electrode 22a, and the 1st penetration electrode 24a are provided integrally, such a problem does not arise. Therefore, the airtightness of the space 34 that houses the electronic component 40 can be enhanced.

  In the electronic device 100, the package substrate 10 is a single layer. Therefore, the apparatus can be reduced in height and size as compared with the case where the package substrate has a multilayer structure.

2. Next, a method for manufacturing an electronic device according to the present embodiment will be described with reference to the drawings. 4-12 is sectional drawing which shows typically the manufacturing process of the electronic device which concerns on this embodiment. 4 to 12 correspond to FIG.

  As shown in FIG. 4, a ceramic mother substrate (substrate) 110 having through holes 16a and 16b is prepared. The ceramic mother substrate 110 is, for example, a single layer ceramic. The ceramic mother board 110 further has a groove 18 for chip separation. The groove portion 18 functions as a scribe line for cleaving the ceramic mother substrate 110 to form the package substrate 10. The through holes 16 a and 16 b and the groove portion 18 are formed by irradiating the ceramic mother substrate 110 with a laser. By adjusting the laser irradiation conditions, the through holes 16a and 16b are formed in a tapered shape.

  Next, as shown in FIGS. 5 to 10, the surface electrodes 20a and 20b, the back electrodes 22a and 22b, and the through electrodes 24a and 24b are integrally formed by plating. Further, for example, the joint portion 26 is formed simultaneously with these electrodes 20a, 20b, 22a, 22b, 24a, 24b. Hereinafter, a case where the front surface electrodes 20a and 20b, the back surface electrodes 22a and 22b, the through electrodes 24a and 24b, and the joint portion 26 are formed by a semi-additive method will be described.

  As shown in FIG. 5, the first layer 2 is formed on the entire surface of the ceramic mother substrate 110. Specifically, the first main surface 12, the second main surface 14 of the ceramic mother substrate 110, the surface of the ceramic mother substrate 110 that defines the through holes 16 a and 16 b, and the surface of the ceramic mother substrate 110 that defines the groove 18. The first layer 2 is formed. The first layer 2 is formed, for example, by forming a Cr layer on the ceramic mother substrate 110 and then forming a Cu layer on the Cr layer. For example, the Cr layer and the Cu layer are formed by sputtering. Since the through holes 16a and 16b have a tapered shape, the first layer 2 can be easily attached to the surface of the ceramic mother substrate 110 that defines the through holes 16a and 16b. Therefore, the first layer 2 can be uniformly formed without interruption. The first layer 2 functions as a seed layer serving as a plating nucleus when the second layer 4 is formed by electroplating.

  As shown in FIG. 6, a resist layer (plating resist) R is formed on the first main surface 12 and the second main surface 14 of the ceramic mother substrate 110. In the example shown in FIG. 6, the resist layer R is formed on the first main surface 12 and the second main surface 14 via the first layer 2. The resist layer R is formed so as to avoid the region where the surface electrodes 20 a and 20 b are formed and the region where the bonding portion 26 is formed in the first main surface 12. Further, the resist layer R is formed so as to avoid a region of the second main surface 14 where the back electrodes 22a and 22b are formed. The resist layer R is formed, for example, by applying a photosensitive organic material, and performing exposure and development (a photolithography technique).

  As shown in FIG. 7, the second layer 4 is formed in the first main surface 12, the second main surface 14, and the through holes 16a and 16b of the ceramic mother substrate 110 by plating. In the example shown in FIG. 7, the second layer 4 is formed in the first main surface 12, the second main surface 14, and the through holes 16 a and 16 b of the ceramic mother substrate 110 via the first layer 2. The second layer 4 is formed avoiding the region where the resist layer R is formed. As a plating method, for example, electroplating (electrolytic plating) can be used. When electroplating is used, the material of the second layer 4 is, for example, copper (Cu). Since the through holes 16a and 16b have a tapered shape, it is possible to prevent voids (voids) from being formed in the second layer 4 formed in the through holes 16a and 16b. The reason will be described later.

  Through this step, the second layer 4 is integrally formed with a portion constituting the first surface electrode 20a, a portion constituting the first back electrode 22a, and a portion constituting the first through electrode 24a (FIG. 3). reference). Further, in the second layer 4, a part constituting the second surface electrode 20b, a part constituting the second back electrode 22b, and a part constituting the second through electrode 24b are integrally formed (see FIG. 3). . Furthermore, in this step, the second layer 4 is formed at the same time as the portion constituting the joint portion 26.

  In this step, electroless plating may be used as a plating method. In this case, a base electrode functioning as a catalyst is formed instead of the first layer 2. The material of the base electrode is, for example, palladium (Pd). The second layer 4 may have a laminated structure in which, for example, copper (Cu), nickel (Ni), and gold (Au) are laminated in this order, or nickel (Ni), copper (Cu), A stacked structure in which gold (Au) is stacked in this order may be employed.

  As shown in FIG. 8, the resist layer R is removed (peeled). The removal of the resist layer R is performed using, for example, an organic solvent that dissolves the resist layer R.

  As shown in FIG. 9, the exposed first layer 2 is removed. The removal of the first layer 2 is performed, for example, by wet etching.

  As shown in FIG. 10, a third layer 6 that covers the first layer 2 and the second layer 4 is formed. The third layer 6 is formed by, for example, electroless plating. The third layer 6 has a laminated structure in which nickel (Ni) and gold (Au) are laminated in this order. By forming the third layer 6, it is possible to prevent the first layer 2 and the second layer 4 from being oxidized. Through the above steps, the front surface electrodes 20a and 20b, the back surface electrodes 22a and 22b, the through electrodes 24a and 24b, and the joint portion 26 can be formed.

  As shown in FIG. 11, the electronic component 40 is mounted on the ceramic mother board 110. Specifically, the first surface electrode 20a provided on the ceramic mother substrate 110 and the first mount electrode 48a of the electronic component 40 are joined via an adhesive 50a, and the second surface electrode 20b and the second mount electrode are joined. 48b is bonded via an adhesive 50b.

  As shown in FIG. 12, the lid 30 is joined to the ceramic mother board 110, and the electronic component 40 is accommodated in a space 34 surrounded by the ceramic mother board 110 and the lid 30. Specifically, first, for example, a clad material in which a joining member 36 (silver brazing) is formed on the entire surface of one side of Kovar, which is a base material of the lid 30, and nickel (not shown) is formed on the other surface, The lid 30 is processed into a concave shape by drawing. Next, the lid body 30 is disposed on the joining portion 26 via the joining member 36. Next, for example, by irradiating the lid 30 with a laser beam or an electron beam, the bonding member 36 is heated and melted and bonded to the bonding portion 26. Through the above steps, the electronic component 40 can be accommodated in the space 34. By performing this step in a reduced pressure atmosphere, the space 34 can be brought into a reduced pressure state.

  As shown in FIGS. 1 to 3, the package substrate 10 (electronic device 100) is cut out from the ceramic mother substrate 110. Specifically, the ceramic mother substrate 110 is cleaved along the groove 18 to cut out the package substrate 10 (electronic device 100).

  Through the above steps, the electronic device 100 can be manufactured.

  The method for manufacturing the electronic device 100 according to the present embodiment has, for example, the following characteristics.

  In the manufacturing method of the electronic device 100, the surface electrode 20a (20b) is formed on one main surface 12 of the ceramic mother substrate 110, the back electrode 22a (22b) is formed on the other main surface 14, and the through electrode 24a is formed in the through holes 16a and 16b. (24b) is integrally formed by plating. Thereby, the airtightness of the space 34 which accommodates the electronic component 40 can be improved. Therefore, a highly reliable electronic device can be obtained. Furthermore, since the front surface electrodes 20a and 20b, the back surface electrodes 22a and 22b, and the through electrodes 24a and 24b can be formed in the same process, the manufacturing process can be simplified.

  According to the method for manufacturing the electronic device 100, the ceramic mother substrate 110 is a single-layer ceramic. Therefore, the front surface electrodes 20a and 20b, the back surface electrodes 22a and 22b, and the through electrodes 24a and 24b can be formed with high accuracy. For example, if a package substrate is formed by applying a conductive paste to the ceramic green sheet by screen printing, etc., and then stacking and firing a plurality of sheets, the ceramic green sheet shrinks by firing, so the electrode is accurate. It cannot be formed well. On the other hand, since single-layer ceramics have small shrinkage, the mounting electrode, the mounting electrode, and the through electrode can be formed with high accuracy. Furthermore, according to the manufacturing method of the electronic device 100, since patterning can be performed using a photolithography technique, the electrodes 20a, 20b, 22a, 22b, 24a, and 24b can be formed with higher accuracy. That is, since the mounting electrode, the mounting electrode, and the through electrode can be formed by photolithography after firing the ceramic substrate, it is not necessary to perform firing after forming these electrodes. Therefore, these electrodes can be formed with high accuracy. Furthermore, since it is a single layer ceramic substrate, the number of steps can be reduced and the material can be reduced as compared with the case of a multilayer ceramic substrate. In addition, since it is a single layer, there is no leakage between layers, and airtightness can be improved.

  According to the method for manufacturing the electronic device 100, the through holes 16 a and 16 b have a hole size on the other main surface (second main surface) 14 side rather than the one main surface (first main surface) 12 side of the package substrate 10. Includes a portion with a small (diameter). That is, the through holes 16a and 16b have a tapered shape. Thereby, it is possible to improve the contact of the first layer 2 with respect to the surface of the ceramic mother substrate 110 that defines the through holes 16a and 16b. Therefore, the first layer 2 can be uniformly formed without interruption. Further, since the through holes 16a and 16b have a tapered shape, it is possible to prevent the formation of voids serving as leak paths in the second layer 4 formed in the through holes 16a and 16b. . Thereby, the airtightness of the space 34 can be improved. The reason will be described below.

FIG. 13 is a cross-sectional view schematically showing how the second layer 4 grows in the through hole 16a. As shown in FIG. 13, when the through-hole 16a has a taper shape, the 2nd layer 4 is the center of the through-hole 16a from the surface (side surface) which prescribes | regulates the through-hole 16a of the ceramic mother board 110 first. Grows towards the axis. Thereafter, when the second layer 4 grows and one opening (opening on the second main surface 14 side) having a small area of the through-hole 16a is blocked, the second layer 4 also has the first main portion from the blocked portion. It grows in the direction of the opening on the surface 12 side. Therefore, the formation of voids is hindered. For example, when growing only from the side surface of the ceramic mother substrate, a void along the central axis of the through hole may be formed. As described above, in the electronic device 100, since the through holes 16a and 16b have a tapered shape, the formation of voids in the second layer 4 formed in the through holes 16a and 16b can be prevented. it can.

  According to the method for manufacturing the electronic device 100, in the step of forming the front surface electrodes 20a and 20b, the back surface electrodes 22a and 22b, and the through electrodes 24a and 24b, the joint portion 26 to be joined to the lid body 30 is simultaneously formed. be able to. Thereby, the manufacturing process can be simplified.

3. Modified example of manufacturing method of electronic device 3.1. First Modified Example Next, a first modified example of the electronic device manufacturing method according to the present embodiment will be described with reference to the drawings. 14-17 is sectional drawing which shows typically the manufacturing process of the electronic device which concerns on a 1st modification. Hereinafter, differences from the method of manufacturing the electronic device 100 according to the above-described embodiment will be described, and detailed description of similar points will be omitted.

  As shown in FIG. 14, the first layer 2 is formed on the entire surface of the ceramic mother substrate 110. Specifically, the first layer 2 is a ceramic that defines the first main surface 12, the second main surface 14, the surface of the ceramic mother substrate 110 that defines the through holes 16 a and 16 b, and the groove 18. The first layer 2 is formed on the surface of the mother substrate 110. The first layer 2 functions as a seed layer.

  As shown in FIG. 15, the second layer 4 is formed in the first main surface 12, the second main surface 14, and the through holes 16a and 16b of the ceramic mother substrate 110 by plating. In the illustrated example, the second layer 4 is formed in the first main surface 12, the second main surface 14, the through holes 16 a and 16 b, and the groove portion 18.

  As shown in FIG. 16, a resist layer R is formed on the surface of the second layer 4 (the outer surface of the second layer 4). Specifically, the resist layer R is formed on the outer surface (upper surface) of the second layer 4 on the first main surface 12 side and on the outer surface (lower surface) of the second layer 4 on the second main surface 14 side.

  As shown in FIG. 17, the second layer 4 is etched using the resist layer R as a mask. As a result, the second layer 4 is integrally formed with a portion constituting the first surface electrode 20a, a portion constituting the first back electrode 22a, and a portion constituting the first through electrode 24a (see FIG. 3). ). Further, in the second layer 4, a part constituting the second surface electrode 20b, a part constituting the second back electrode 22b, and a part constituting the second through electrode 24b are integrally formed (see FIG. 3). .

  Subsequent processes are the same as those of the electronic device manufacturing process according to the above-described embodiment, and a description thereof will be omitted.

  According to the method for manufacturing an electronic device according to this modification, the same effects as those of the method for manufacturing an electronic device according to the above-described embodiment can be achieved.

3.2. Second Modified Example Next, a second modified example of the electronic device manufacturing method according to the present embodiment will be described with reference to the drawings. 18 to 20 are cross-sectional views schematically showing manufacturing steps of the electronic device according to the second modification. Hereinafter, differences from the method of manufacturing the electronic device 100 according to the above-described embodiment will be described, and detailed description of similar points will be omitted.

  In the method for manufacturing the electronic device 100 according to the above-described embodiment, one electronic device 100 is manufactured from one ceramic mother substrate 110.

  On the other hand, in this modification, a plurality of electronic devices 100 can be manufactured from one ceramic mother substrate 110. This will be described in detail below.

  As shown in FIG. 18, a plurality of (two in the illustrated example) surface electrodes 20a, 20b, back electrodes 22a, 22b, through electrodes 24a, 24b, and bonding portions 26 are formed on the ceramic mother substrate 110.

  As shown in FIG. 19, a plurality of electronic components 40 a and 40 b are mounted on the ceramic mother board 110. In the illustrated example, two electronic components 40 a and 40 b are mounted on the ceramic mother board 110. Next, the plurality of lid bodies 30a and 30b are joined to the ceramic mother board 110, and each of the plurality of electronic components 40a and 40b is accommodated in a space 34 surrounded by the ceramic mother board 110 and the lid bodies 30a and 30b. To do. In the illustrated example, the electronic component 40a is accommodated in a space 34 surrounded by the ceramic mother substrate 110 and the lid body 30a, and the electronic component 40b is accommodated in the space 34 surrounded by the ceramic mother substrate 110 and the lid body 30b. Accommodate.

  As shown in FIG. 20, a plurality of package substrates 10 (electronic devices 100) are cut out from the ceramic mother substrate 110. Specifically, the ceramic mother substrate 110 is cleaved along the groove portion 18 and separated into pieces for each electronic device 100. Thereby, a plurality (two in the illustrated example) of electronic devices 100 can be obtained.

  According to the method for manufacturing the electronic device 100 according to this modification, the electronic device can be efficiently manufactured.

4). Next, an electronic device according to the present embodiment will be described with reference to the drawings. The electronic apparatus according to the present embodiment includes the electronic device according to the present invention. Below, the electronic device containing the electronic device 100 is demonstrated as an electronic device which concerns on this invention.

  FIG. 21 is a perspective view schematically showing a mobile phone (including PHS) 1200 as the electronic apparatus according to the present embodiment.

  As shown in FIG. 21, the cellular phone 1200 includes a plurality of operation buttons 1202, an earpiece 1204, and a mouthpiece 1206, and a display unit 1208 is disposed between the operation buttons 1202 and the earpiece 1204. .

  Such a cellular phone 1200 incorporates the electronic device 100.

  FIG. 22 is a perspective view schematically showing a digital still camera 1300 as the electronic apparatus according to the present embodiment. Note that FIG. 22 also shows a simple connection with an external device.

  Here, an ordinary camera sensitizes a silver halide photographic film with a light image of a subject, whereas a digital still camera 1300 photoelectrically converts a light image of a subject with an image sensor such as a CCD (Charge Coupled Device). An imaging signal (image signal) is generated.

  A display unit 1310 is provided on the back of a case (body) 1302 in the digital still camera 1300, and is configured to display based on an imaging signal from the CCD. The display unit 1310 displays an object as an electronic image. Functions as a viewfinder.

  A light receiving unit 1304 including an optical lens (imaging optical system), a CCD, and the like is provided on the front side (the back side in the drawing) of the case 1302.

  When the photographer confirms the subject image displayed on the display unit 1310 and presses the shutter button 1306, the CCD image pickup signal at that time is transferred and stored in the memory 1308.

  In the digital still camera 1300, a video signal output terminal 1312 and an input / output terminal 1314 for data communication are provided on the side surface of the case 1302. A television monitor 1430 is connected to the video signal output terminal 1312 and a personal computer 1440 is connected to the input / output terminal 1314 for data communication, if necessary. Further, the imaging signal stored in the memory 1308 is output to the television monitor 1430 or the personal computer 1440 by a predetermined operation.

  Such a digital still camera 1300 incorporates the electronic device 100.

  FIG. 23A is a diagram schematically showing a GPS (Global Positioning System) 1400 as an electronic apparatus according to the present embodiment. FIG. 23B is a perspective view schematically showing a timepiece 1500 as the electronic apparatus according to this embodiment. FIG. 23C is a plan view schematically showing a game device 1600 as the electronic device according to the present embodiment.

  The electronic device 100 is mounted on the GPS 1400, the clock 1500, and the game machine 1600 shown in FIG.

  The electronic device 100 can be mounted on various electronic devices as shown in FIGS. 21 to 23. The electronic device 100 is a sensor such as a reference frequency generation function, a filter function, a pressure sensor, a temperature sensor, and an acceleration sensor. Serves as a function.

  The electronic devices 1200, 1300, 1400, 1500, and 1600 as described above can have an electronic device that can improve the airtightness of the space that houses the electronic components, and thus can have high reliability.

  In addition to the above-described electronic devices 1200, 1300, 1400, 1500, and 1600, the electronic device including the electronic device 100 includes, for example, an ink jet ejection device (for example, an ink jet printer), a personal computer, a television, and a video camera. , Video tape recorders, various navigation devices, pagers, electronic notebooks (including those with communication functions), electronic dictionaries, calculators, word processors, workstations, videophones, TV monitors for crime prevention, electronic binoculars, POS terminals, medical equipment (eg electronic Thermometer, blood pressure monitor, blood glucose meter, electrocardiogram measuring device, ultrasonic diagnostic device, electronic endoscope), fish detector, various measuring instruments, instruments (eg, vehicles, aircraft, rockets, ship instruments), robots, Posture control of human body, flight simulator It can be applied etc..

  The present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

R: resist layer, 2 ... first layer, 4 ... second layer, 6 ... third layer, 10 ... package substrate (substrate), 12 ... first main surface, 14 ... second main surface, 16a ... first penetration Hole, 16b ... second through hole, 18 ... groove, 20a ... first surface electrode, 20b ... second surface electrode, 22a ... first back electrode, 22b ... second back electrode, 24a ... first through electrode, 24b ... 2nd penetration electrode, 26 ... junction part, 30 ... lid, 32 ... brim part, 36 ... joining member, 40 ... electronic component, 42 ... piezoelectric vibrating piece, 44a ... 1st excitation electrode, 44b ... 2nd excitation electrode, 46a ... first connection electrode, 46b ... second connection electrode, 48a ... first mount electrode, 48b ... second mount electrode, 50a ... adhesive, 50b ... adhesive, 100 electronic device, 110 ceramic mother substrate, 1200 ... mobile phone Telephone, 1202 ... operation buttons, 1204 ... earpiece 1206: Mouthpiece, 1208 ... Display, 1300 ... Digital still camera, 1302 ... Case, 1304 ... Light receiving unit, 1306 ... Shutter button, 1308 ... Memory, 1310 ... Display, 1312 ... Video signal output terminal, 1314 ... Input / output terminal, 1430 ... TV monitor, 1440 ... personal computer, 1400 ... GPS, 1500 ... clock, 1600 ... game machine

Claims (8)

Preparing an electronic component and a substrate having a through hole;
A step of integrally forming a mounting electrode on one main surface of the substrate, a mounting electrode on the other main surface of the substrate, and a through electrode in the through hole by plating;
Mounting the electronic component on the substrate;
The manufacturing method of the electronic device characterized by the above-mentioned. The step of forming the mounting electrode, the mounting electrode, and the through electrode,
Forming a resist layer on the one main surface and the other main surface;
Forming a conductive layer in the one main surface, the other main surface, and the through hole by the plating; and
Removing the resist layer;
The manufacturing method of the electronic device of Claim 1 characterized by the above-mentioned. The step of forming the mounting electrode, the mounting electrode, and the through electrode,
Before the step of forming the resist layer, forming a seed layer serving as a plating nucleus;
Etching the seed layer after removing the resist layer;
The manufacturing method of the electronic device of Claim 2 characterized by the above-mentioned.   4. The method of manufacturing an electronic device according to claim 1, wherein the through hole includes a portion in which the hole size on the other main surface side is smaller than the one main surface side. 5. .   The method for manufacturing an electronic device according to claim 1, wherein the substrate is a single-layer ceramic. The step of forming the mounting electrode, the mounting electrode, and the through electrode,
The joint portion for connecting to the lid on the one main surface is formed simultaneously with the mounting electrode, the mounting electrode, and the through electrode, according to any one of claims 1 to 5. Electronic device manufacturing method. A substrate having a through hole;
A mounting electrode provided on one main surface of the substrate;
A mounting electrode provided on the other main surface of the substrate;
A through electrode provided in the through hole and electrically connected to the mounting electrode and the mounting electrode;
An electronic component joined to the mounting electrode;
With
The mounting device, the mounting electrode, and the through electrode are integrated.   An electronic apparatus comprising the electronic device according to claim 7.

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