JP2013161866A - Imprint method and template - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an imprint method capable of reducing influences on processing after imprinting.SOLUTION: In an imprint method in an embodiment, a template pattern formed on a first template is transferred to plural imprint shots on a processed substrate to form a transfer pattern. Then, a resist is dripped in a region of an inter-imprint region that is a region between the imprint shots. Furthermore, a second template different from the first template is brought into contact with the resist, so as to fill the inter-imprint region with the resist. Then, hardening light is radiated to the resist to harden the resist, and the inter-imprint region is filled with the hardened resist. Then, the second template is exfoliated from the resist.

Description

  Embodiments described herein relate generally to an imprint method and a template.

  One technique used in lithography processes in semiconductor device manufacturing is nanoimprint lithography (NIL). NIL is a technology for transferring a pattern according to a template pattern onto a substrate to be processed by pressing a template formed by electron beam (EB) drawing or the like against the substrate to be processed such as a wafer.

  When performing NIL, a template having grooves having a desired pattern is pressure-bonded to a photocuring agent applied on a substrate to be processed. Then, the photo-curing agent is hardened by exposure while the template and the photo-curing resin are in close contact, and then the template is released from the substrate to be processed, thereby forming a pattern on the photo-curing agent on the substrate to be processed.

  In such NIL, there is a problem that a portion without a photocuring agent (gap portion) (exposed portion) is formed between imprint shots, which affects processing after imprinting. For this reason, it is desired to reduce the influence on processing after imprinting.

JP 2009-260293 A

  The problem to be solved by the present invention is to provide an imprint method and a template that can reduce the influence on processing after imprinting.

  According to the embodiment, an imprint method is provided. In the imprint method, after a first resist as a transfer material is dropped on a substrate to be processed, a template pattern formed on the first template is transferred to the first resist a plurality of times. Thus, a transfer pattern is formed on a plurality of imprint shots. Then, a second resist is dropped on an area between imprint shots, which is an area between the imprint shots. Furthermore, the second resist different from the first template is brought into contact with the second resist, thereby filling the region between the imprint shots with the second resist. Then, the second resist is cured by irradiating the second resist with curing light, and the region between the imprint shots is embedded with the cured second resist. Then, the second template is separated from the second resist.

FIG. 1 is a diagram illustrating a configuration of an imprint apparatus according to the first embodiment. FIG. 2 is a diagram illustrating a resist layer formation processing procedure. FIG. 3 is a diagram for explaining the processing procedure of the imprint process using the transfer template. FIG. 4 is a diagram for explaining the resist embedding process according to the first embodiment. FIG. 5 is a diagram illustrating a configuration of an embedded template according to the first embodiment. FIG. 6 is a diagram for explaining a procedure for embedding a resist using an embedding template. FIG. 7 is a diagram for explaining the relationship between the size of the dropping region and the embedded template. FIG. 8 is a diagram illustrating a configuration example of an embedded template according to the second embodiment. FIG. 9 is a diagram illustrating an example of a dripping region according to the second embodiment. FIG. 10 is a diagram for explaining a region where a hardened resist is embedded. FIG. 11 is a diagram illustrating a configuration of an embedded template according to the third embodiment. FIG. 12 is a diagram illustrating a configuration of an embedded template according to the fourth embodiment. FIG. 13 is a diagram illustrating an example of a dripping region according to the fourth embodiment. FIG. 14 is a diagram showing a configuration of an embedded template according to the fifth embodiment. FIG. 15 is a view for explaining a resist embedding process according to the sixth embodiment.

  Hereinafter, an imprint method and a template according to an embodiment will be described in detail with reference to the accompanying drawings. Note that the present invention is not limited to these embodiments.

(First embodiment)
FIG. 1 is a diagram illustrating a configuration of an imprint apparatus according to the first embodiment. The imprint apparatus 1 is an apparatus that performs imprint lithography such as nanoimprint lithography (NIL). The imprint apparatus 1 forms a resist pattern on a transfer substrate (substrate to be processed) such as a wafer W by using a template (original plate) that is a mold substrate.

  The imprint apparatus 1 according to the present embodiment transfers a template pattern (circuit pattern or the like) onto the wafer W using a first template on which a circuit pattern or the like is formed, and a second different from the first template. Using this template, a resist is embedded between imprint shots.

  In the following description, a first template used for transferring a circuit pattern is referred to as a transfer template Tx, and a second template used for embedding a resist is referred to as an embedded template (an embedded template T1 described later in the present embodiment).

  The imprint apparatus 1 drops resist (photocuring agent such as UV (Ultra-Violet-rays) curable resin) between imprint shots after imprinting using the transfer template Tx (after transferring the circuit pattern). To do. As a result, the imprint apparatus 1 applies a resist between imprint shots (groove portions) where the circuit pattern is not transferred by imprinting in the region on the wafer W. Then, the imprint apparatus 1 imprints a resist using the embedding template T1 having an uneven surface corresponding to the shape between the imprint shots, thereby filling the space between the imprint shots with the resist.

  The imprint apparatus 1 includes an original stage 2, a substrate chuck 4, a sample stage 5, a reference mark 6, an alignment sensor 7, a droplet dropping device 8, a stage base 9, and a UV light source 10. Further, the imprint apparatus 1 according to the present embodiment includes a control device 20. FIG. 1 illustrates a case where the imprint apparatus 1 fills a space between imprint shots with a resist using the embedding template T1.

  The sample stage 5 places the wafer W and moves in a plane parallel to the placed wafer W (in a horizontal plane). The sample stage 5 moves the wafer W to the lower side of the droplet dropping device 8 when dropping a resist as a transfer material onto the wafer W, and embeds the wafer W when performing a stamping process on the wafer W. Move to the lower side of T1.

  A substrate chuck 4 is provided on the sample stage 5. The substrate chuck 4 fixes the wafer W at a predetermined position on the sample stage 5. A reference mark 6 is provided on the sample stage 5. The reference mark 6 is a mark for detecting the position of the sample stage 5 and is used for alignment when the wafer W is loaded onto the sample stage 5.

  An original stage 2 is provided on the bottom surface side (wafer W side) of the stage base 9. The original stage 2 fixes the embedded template T1 at a predetermined position from the back side of the embedded template T1 (the surface on which the template pattern is not formed) by vacuum suction or the like.

  The stage base 9 supports the embedded template T1 by the original stage 2 and presses the template pattern of the embedded template T1 against the resist on the wafer W. The stage base 9 moves in the vertical direction (vertical direction), thereby pressing the embedded template T1 against the resist and separating (releasing) the embedded template T1 from the resist. The resist used for imprinting is, for example, a photocurable resin (photocuring agent) (chemical solution). An alignment sensor 7 is provided on the stage base 9. The alignment sensor 7 is a sensor that detects the position of the wafer W and the position of the embedded template T1.

  When the template pattern is transferred onto the wafer W, the stage base 9 of the present embodiment supports the transfer template Tx and moves the transfer template Tx in the vertical direction. Further, when embedding a resist between imprint shots, the stage base 9 supports the embedding template T1 and moves the embedding template T1 in the vertical direction.

  The droplet dropping device 8 is a device that drops a resist on the wafer W by an inkjet method. An ink jet head (not shown) provided in the droplet dropping device 8 has a plurality of fine holes for ejecting resist droplets.

  The UV light source 10 is a light source that irradiates UV light, and is provided above the stage base 9. The UV light source 10 emits UV light from above the embedded template T1 in a state where the embedded template T1 is pressed against the resist. The control device 20 is connected (not shown) to each component of the imprint apparatus 1 and controls each component.

  The imprint apparatus 1 forms a resist pattern in the imprint shot and a resist between the imprint shots on the wafer W as a resist layer. FIG. 2 is a diagram illustrating a resist layer formation processing procedure.

  The imprint apparatus 1 performs imprint on each imprint shot on the wafer W (step S1). When imprinting is performed, the wafer W placed on the sample stage 5 is moved to just below the droplet dropping device 8. Then, a resist is dropped on the imprint shot position on the wafer W.

  Thereafter, the wafer W on the sample stage 5 is moved directly below the transfer template Tx. Then, the transfer template Tx is pressed against the resist on the wafer W. After the transfer template Tx and the resist are brought into contact with each other for a predetermined time, the resist is cured by irradiating the resist with the UV light source 10 in this state. Thereby, the transfer pattern corresponding to the template pattern is transferred to the resist in the imprint shot. At the time of imprinting, the template pattern transfer is repeated for each imprint shot.

  Thereafter, the imprint apparatus 1 embeds a resist between imprint shots on the wafer W (step S2). When imprinting is performed, the wafer W placed on the sample stage 5 is moved to just below the droplet dropping device 8. Then, a resist is dropped between imprint shots on the wafer W.

  Thereafter, the wafer W on the sample stage 5 is moved directly below the embedded template T1. Then, the embedded template T1 is pressed against the resist on the wafer W. After the embedded template T1 and the resist are brought into contact with each other for a predetermined time, the resist is cured by irradiating the resist with the UV light source 10 in this state. Thereby, a resist is embedded between imprint shots. The embedding of the resist between the imprint shots is performed, for example, by dividing the imprint shots into a plurality of areas and dividing each of the divided areas.

  As described above, the imprint apparatus 1 embeds a resist using the embedding template T1 after imprinting using the transfer template Tx. As a result, a resist to which the template pattern is transferred and a resist embedded between imprint shots are formed on the wafer W.

  Next, the processing procedure of the imprint process will be described. FIG. 3 is a diagram for explaining the processing procedure of the imprint process using the transfer template. FIG. 3 shows a cross-sectional view of the wafer W, the transfer template Tx, and the like in the imprint process.

  As shown in FIG. 3A, a resist 12X is dropped on the upper surface of the wafer W. Thereby, each droplet of the resist 12X dropped on the wafer W spreads in the wafer W surface. Then, as shown in FIG. 3B, the transfer template Tx is moved to the resist 12X side, and as shown in FIG. 3C, the transfer template Tx is pressed against the resist 12X. As described above, when the transfer template Tx made by digging a quartz substrate or the like is brought into contact with the resist 12X, the resist 12X flows into the template pattern of the transfer template Tx due to a capillary phenomenon.

  After the resist 12X is filled in the transfer template Tx for a preset time, UV light is irradiated. As a result, the resist 12X is cured. Then, as shown in FIG. 3D, a resist pattern 12Y obtained by inverting the template pattern is formed on the wafer W by releasing the transfer template Tx from the cured resist pattern 12Y.

  Next, the resist embedding process according to the first embodiment will be described. FIG. 4 is a diagram for explaining the resist embedding process according to the first embodiment. FIG. 4 shows a view of the wafer W as viewed from above.

  As shown in FIG. 4A, a resist pattern 12 </ b> Y is formed on a plurality of imprint shots 22 on the wafer W. The imprint shots 22 have a substantially rectangular shape, and are arranged on the wafer W in a matrix at predetermined intervals. With this arrangement, each imprint shot 22 is provided with a gap having a predetermined width (hereinafter, referred to as an inter-imprint shot area 21) between adjacent imprint shots 22. The inter-imprint shot area 21 is an area where the resist pattern 12Y is not formed, and is a gap part.

  After the resist pattern 12Y is formed on the imprint shot 22, as shown in FIG. 4B, the resist 13X is dropped on the area 21 between the imprint shots. The resist 13X may be the same resist component as the resist 12X used for forming the resist pattern 12Y, or may be a different resist component.

  The imprint apparatus 1 drops the resist 13 </ b> X on a partial area of the inter-imprint shot area 21. Specifically, the imprint apparatus 1 drops the resist 13X into the cross-shaped region (dropping region A1) so as to be in contact with a part of the four imprint shots 22 arranged in a lattice pattern in two vertical and two horizontal directions. The dripping region A1 is adjacent to the lower and right sides of the first imprint shot 22 and is adjacent to the lower and left sides of the second imprint shot 22 when the wafer W is viewed from above. Furthermore, when the wafer W is viewed from above, the dropping region A1 is adjacent to the upper side and the right side of the third imprint shot 22, and is adjacent to the upper side and the left side of the fourth imprint shot 22.

  After the resist 13X is dropped on the dropping area A1, the embedded template T1 is pressed against the resist 13X, and then the resist 13X is irradiated with UV light. Thereby, as shown in FIG. 4C, the hardened resist 13Y is embedded in the dropping region A1.

  FIG. 5 is a diagram illustrating a configuration of an embedded template according to the first embodiment. The embedding template T1 has a convex portion (pressing portion P1) having a cross-shaped (crossbar-shaped) upper surface, and the upper surface of the pressing portion P1 is pressed against the resist 13X. The cross shape that is the upper surface shape of the pressing portion P1 has the same shape as the dropping region A1. In other words, the upper surface shape of the pressing portion P1 is substantially the same shape as a part of the area 21 between imprint shots. Further, the upper surface of the pressing portion P1 is configured to be slightly smaller than the dropping region A1. With this configuration, when the pressing portion P1 is pressed against the resist 13X, the pressing portion P1 does not collide with the formed resist pattern 12Y.

  Note that the upper surface shape of the pressing portion P1 may be substantially the same size as a part of the area 21 between imprint shots, or may be an area larger than a part of the area 21 between imprint shots.

  FIG. 6 is a diagram for explaining a procedure for embedding a resist using an embedding template. FIG. 6 shows a sectional view of the wafer W, the embedding template T1, and the like in the resist embedding process.

  As shown in FIG. 6A, a resist pattern 12Y is formed on the wafer W using a transfer template Tx. The resist pattern 12 </ b> Y has a transfer pattern 42 to which the template pattern is transferred, and a peripheral pattern 41 that surrounds the transfer pattern 42. The surrounding pattern 41 is a wall pattern having substantially the same height as the transfer pattern 42. With this configuration, the imprint shot area 21 is sandwiched between the surrounding patterns 41. The resist 13X is dropped onto a cross-shaped region (dropping region A1) between the peripheral pattern 41 and the peripheral pattern 41 adjacent to the peripheral pattern 41.

  Each droplet of the resist 13X dropped on the wafer W spreads in the dropping region A1. Then, as shown in FIG. 6B, the embedded template T1 is moved to the resist 13X side, and the pressing portion P1 of the embedded template T1 is pressed against the resist 13X.

  As shown in FIG. 6A, in the state where the resist 13X is simply dropped on the dropping area A1, there is a gap between the already imprinted resist pattern 12Y (imprint shot 22) and the resist pattern 12Y. There is. As shown in FIG. 6B, the resist 13X fills the gap between the resist patterns 12Y by bringing the embedding template T1 into contact with the resist 13X and filling the dropping region A1 with the resist 13X.

  Thereafter, as shown in FIG. 6C, the UV light L1 is irradiated from above the substantially transparent embedded template T1. The resist 13X becomes a cured resist 13Y as shown in FIG. 6D when irradiated with the UV light L1. Thereby, the resist 13Y is embedded in the dropping region A1. After the resist 13X is cured to become the resist 13Y, the embedded template T1 is released from the resist 13Y.

  Note that the height of the resist 13 </ b> X dropped in the dropping region A <b> 1 may be equal to or higher than the height of the surrounding pattern 41 or may be lower than the height of the surrounding pattern 41. When the height of the resist 13X dropped onto the dropping area A1 is lower than the height of the surrounding pattern 41, the resist 13X is dropped so that the difference in height between the surrounding pattern 41 and the resist 13X is smaller than the thickness of the pressing portion P1. Keep it. Accordingly, it is possible to press the pressing portion P1 against the resist 13X without bringing a portion other than the pressing portion P1 in the embedded template T1 into contact with the resist pattern 12Y.

  Next, the relationship between the size of the dropping area A1 (the size of the resist pattern 12Y formed using the transfer template Tx) and the size of the embedded template T1 will be described. FIG. 7 is a diagram for explaining the relationship between the size of the dropping region and the embedded template. FIG. 7A is a perspective view showing an example of a resist pattern 12Y formed using the transfer template Tx. FIG. 7B is a perspective view showing an example of the embedded template T1. FIG. 7C is a perspective view showing an embedding template T1 ′ (pressing portion P1 ′) which is another configuration example of the embedding template T1 (pressing portion P1). In FIG. 7A, the resist pattern 12Y is shown as a rectangular parallelepiped, but the resist pattern 12Y is a pattern in which a line & space pattern or the like is formed.

  As shown in FIG. 7A, a cross-shaped dripping region A1 is formed by arranging the four resist patterns 12Y in a lattice pattern. Further, as shown in FIG. 7B, the embedding template T1 has a cross-shaped upper surface constituted by four shaft portions (rectangular regions) and a central portion (central portion region).

  The bottom surface and top surface of the resist pattern 12Y are rectangular regions having a dimension x in the X direction and a dimension y in the Y direction. Further, the distance in the X direction (width of the dropping region A1) between the adjacent resist pattern 12Y and the resist pattern 12Y is Bx, and the distance in the Y direction is By.

  Further, the shaft portion of the embedded template T1 is composed of four shaft portions, two shaft portions having an axial length Lx = x and two shaft portions having an axial length Ly = y. . The width of the shaft portion having the length Lx = x is the width By, and the width of the shaft portion having the length Ly = y is the width Bx.

  Then, the embedding template is such that the axial portion of the length Lx = x is adjacent to the side of the dimension x of the resist pattern 12Y, and the axial portion of the length Ly = y is adjacent to the side of the dimension y of the resist pattern 12Y. T1 is pressed against the resist 13X on the dropping region A1.

  When embedding the resist 13Y in the inter-imprint shot area 21, the process of dropping the resist 13X in the dropping area A1 and pressing the embedding template T1 against the resist 13X in the dropping area A1 is repeated. In other words, the resist 13X is dropped on each of the plurality of dropping regions A1, and the embedded template T1 is pressed against the resist 13X in each dropping region A1.

  For this reason, the length of the shaft portion extending in the horizontal direction of the cross shape is set to Lx = x, and the length of the shaft portion extending in the vertical direction is set to Ly = y, whereby the resist 13Y to the interimprint shot region 21 is set. It is possible to repeat the embedding efficiently.

  In addition, the shaft portion of the pressing portion P1 ′ has four shaft portions with an axial length Lx> x / 2 and two shaft portions with an axial length Ly> y / 2. It may be a book. In this case, the shaft portion of length Lx> x / 2 is adjacent to the side of dimension x of resist pattern 12Y, and the shaft portion of length Ly> y / 2 is adjacent to the side of dimension y of resist pattern 12Y. The embedded template T1 is pressed against the resist 13X on the dropping area A1.

  The dropping region A1 may be a region corresponding to the length of the shaft portion of the pressing portion P1 '. For example, in the dripping region A1, the region where the shaft portion having the length Lx> x / 2 is pressed is shorter than the shaft portion having the length Lx> x / 2, and has a length of x / 2 or more. To do. Moreover, the area | region where the axial part of length Ly> y / 2 is pressed among dropping area | region A1 is a dimension shorter than the axial part of length Ly> y / 2, and is set to length more than y / 2. .

  In other words, the length of the horizontal bar and the vertical bar of the pressing portion P1 'that is a cross-shaped cross bar is set to be longer than half of each side of the imprint shot 22 that has already been imprinted on the wafer W.

  For example, when the length of the cross-shaped laterally extending shaft portion is Lx <x / 2, of the resist 13X, the resist 13X dropped near the boundary of the adjacent dropping region A1 is pressed by the pressing portion. I can't guess. On the other hand, by setting the lengths of the cross-shaped laterally extending shaft portions to Lx> x / 2 and Ly> y / 2, among the resists 13X, the resist 13X dripped near the boundary of the adjacent dripping region A1. Even so, it can be pressed by the pressing portion P1 ′. In other words, the pressing portion P1 'can be brought into contact with the resist 13X by aligning the central portion of the pressing portion P1' with the region (corner) where the four imprint shots 22 are gathered.

  Therefore, the embedded template T1 ′ was used by setting the length of the cross-shaped laterally extending shaft portion to Lx> x / 2 and the length of the vertically extending shaft portion to Ly> y / 2. The pressing process on the resist 13X can be efficiently repeated. Further, when the entire gap portion in the wafer W is embedded and imprinted, the resist 13Y can be filled without leaving the gap portion.

  Note that the widths of the templates T1 and T1 'may be slightly shorter than the width of the dropping region A1. Further, the lengths of the templates T1 and T1 'may be slightly shorter than the length of the dropping region A1.

  The embedding of the resist 13Y into the interimprint shot area 21 using the embedding template T1 is performed, for example, for each layer of the wafer process. When manufacturing a semiconductor device (semiconductor integrated circuit), a film forming process on the wafer W, an imprint process using the transfer template Tx, a process of embedding the resist 13Y using the embedded template T1, etc., a resist pattern 12Y and a resist Etching from 13Y is repeated for each layer.

  In this embodiment, the case where the imprint apparatus 1 forms the resist pattern 12Y on each imprint shot has been described. However, the resist pattern 12Y is formed on each imprint shot by an imprint apparatus other than the imprint apparatus 1. May be formed.

  As described above, according to the first embodiment, since the resist 13Y is embedded in the interimprint shot region 21 using the embedded template T1, when processing such as an etching process is performed on the resist pattern 12Y, the imprint shot interval The region 21 can be protected with the resist 3Y. Therefore, when the wafer W after imprinting is processed, it is possible to reduce the influence from the lower layer portion (underlying substrate) of the region 21 between imprint shots.

  Further, since the shape of the pressing portion P1 of the embedding template T1 is a cross shape, the cross-shaped gap portion (dropping region A1) formed by the four imprint shots 22 can be filled by one embedding process. It becomes.

(Second Embodiment)
Next, a second embodiment of the present invention will be described with reference to FIGS. In the second embodiment, the resist 13Y is embedded in the inter-imprint shot area 21 using an embedding template having a pressing portion other than a cross shape.

  FIG. 8 is a diagram illustrating a configuration example of an embedded template according to the second embodiment. An embedding template T2 shown in FIG. 8A includes a convex portion (pressing portion P2) having an L-shaped upper surface shape. Then, the upper surface of the pressing portion P2 is pressed against the resist 13X dropped onto an L-shaped dropping region A2 described later.

  Similarly, the embedding template T3 shown in FIG. 8B includes a convex portion (pressing portion P3) having a rectangular upper surface shape. Then, the upper surface of the pressing portion P3 is pressed against the resist 13X dropped on a rectangular dropping area A3 described later.

  Further, the embedding template T4 shown in FIG. 8C includes a convex portion (pressing portion P4) having a T-shaped upper surface shape. Then, the upper surface of the pressing portion P4 is pressed against the resist 13X dropped onto a rectangular dropping area A4 described later.

  Further, the embedding template T5 shown in FIG. 8D includes a convex portion (pressing portion P5) having an annular upper surface shape. Then, the upper surface of the pressing portion P5 is pressed against the resist 13X dropped on a rectangular dropping area A5 described later.

  FIG. 9 is a diagram illustrating an example of a dripping region according to the second embodiment. FIG. 9 shows a view of the wafer W as seen from above, as in FIG. The drop regions A2 to A5 shown in (a) to (d) of FIG. 9 are formed when the resist 13X is embedded when the resist 13Y is embedded using the embedding templates T2 to T5 shown in (a) to (d) of FIG. It is a dripped area.

  9A shows an L-shaped dripping region A2 applied to the L-shaped pressing portion P2, and FIG. 9B shows a rectangular shape applied to the rectangular pressing portion P3. The shape dripping area | region A3 is shown. 9C shows a T-shaped dripping region A4 applied to the T-shaped pressing portion P4, and FIG. 9D is applied to the annular pressing portion P5. An annular drop region A5 is shown.

  The upper surfaces of the pressing portions P2 to P5 are configured to be slightly smaller than the dropping regions A2 to A5, respectively. With this configuration, when the pressing portions P2 to P5 are pressed against the resist 13X, the pressing portions P2 to P5 do not collide with the formed resist pattern 12Y.

  The upper surfaces of the pressing portions P2 to P5 may be substantially the same size as the dropping regions A2 to A5, respectively, or may be larger than the dropping regions A2 to A5.

  After the resist pattern 12Y is formed on the imprint shot 22, as shown in any one of FIGS. 9A to 9D, the resist 13X is dropped on the area 21 between imprint shots.

  As shown in FIG. 9A, the L-shaped dripping region A <b> 2 is a region adjacent to one side in the X direction and one side in the Y direction of one imprint shot 22. FIG. 9A shows a dropping region A2 adjacent to the right side and the upper side of one imprint shot 22.

  Further, as shown in FIG. 9B, the rectangular drop area A <b> 3 is an area adjacent to one side of one imprint shot 22 in the X direction or the Y direction. The dropping area A3 may or may not include the vicinity of the vertex position of the imprint shot 22 (a vertex area where one side in the X direction and one side in the Y direction intersect). .

  As shown in FIG. 9C, the T-shaped dripping region A4 is a T-shaped region configured by combining the L-shaped dripping region A2 and the rectangular dripping region A3. . In other words, the drop region A4 is adjacent to the upper and right sides of the first imprint shot 22 and adjacent to the upper and left sides of the second imprint shot 22 when the wafer W is viewed from above. In this case, the right side of the first imprint shot 22 and the left side of the second imprint shot 22 are the same side.

  As shown in FIG. 9D, the annular drop region A <b> 5 is a region that surrounds one imprint shot 22. In FIG. 9D, the upper side and the lower side that are two sides in the X direction of one imprint shot 22, the right side and the left side that are two sides in the Y direction, and one each of the four imprint shots 22. The area | region where a vertex gathers and the dripping area | region A5 adjacent to it are shown.

  FIG. 10 is a diagram for explaining a region where a hardened resist is embedded. FIG. 10 shows a view of the wafer W as seen from above, as in FIG. Drop areas A2 to A5 shown in (a) to (d) of FIG. 10 are the same areas as the drop areas A2 to A5 shown in (a) to (d) of FIG.

  As shown in FIG. 10A, the resist 13X is dropped into the L-shaped drop region A2, imprinted with the embedding template T2, and cured to embed the resist 13Y in the drop region A2.

  Similarly, as shown in FIG. 10B, the resist 13Y is dropped into the rectangular drop area A3, and imprinted with the embedding template T3 and hardened, whereby the resist 13Y is embedded in the drop area A3.

  Further, as shown in FIG. 10C, the resist 13Y is embedded in the dropping region A4 by dropping the resist 13X into the T-shaped dropping region A4, imprinting with the embedding template T4, and curing.

  Also, as shown in FIG. 10D, the resist 13X is embedded in the dropping region A5 by dropping the resist 13X in the dropping region A5 in the annular region and impressing and curing it with the embedding template T5.

  In the present embodiment, the imprint shot area 21 is embedded with the resist 13Y by combining the embedding templates T2 to T5. In other words, for each position of the interimprint shot area 21, any of the embedding templates T2 to T5 is brought into contact with the resist 13X to embed the interimprint shot area 21 with the resist 13Y. For example, in the interimprint shot area 21, the interimprint shot area 21 located at the center of the wafer W is embedded with the resist 13Y using the embedded template T5. Then, a resist 13Y is embedded in the inter-imprint shot area 21 located on the outer peripheral portion of the wafer W using the embedded template T3.

  As described above, according to the second embodiment, the resist 13Y is embedded in the inter-imprint shot region 21 using at least one of the embedding templates T2 to T5. When processing the wafer W, it is possible to reduce the influence from the lower layer portion of the inter-imprint shot area 21 and the like.

(Third embodiment)
Next, a third embodiment of the present invention will be described with reference to FIG. In the third embodiment, the resist 13Y is embedded in the inter-imprint shot area 21 using an embedded template having a flat pressing portion.

  FIG. 11 is a diagram illustrating a configuration of an embedded template according to the third embodiment. The embedding template T6 has a substantially flat pressing portion P6. The pressing part P6 has a rectangular upper surface embedded in the annular shape of the pressing part P5. For this reason, the outer peripheral part of the pressing part P6 is comprised by the substantially same magnitude | size as the outer peripheral part of the pressing part P5. In other words, the pressing portion P6 has an upper surface having the same shape as a region including the imprint shot 22 and its peripheral region. In addition, you may comprise the outer peripheral part of the pressing part P6 larger than the outer peripheral part of the pressing part P5.

  The embedding template T6 is used, for example, when the resist 13X dropped onto any one of the dropping areas A1 to A5 or a combination of these is pressed. At this time, the resist 13X is dropped onto the dropping areas A1 to A5 up to a position higher than the surrounding pattern 41. Accordingly, the pressing portion P6 can be brought into contact with the resist 13X without the pressing portion P6 being in contact with the resist pattern 12Y.

  The area of the upper surface of the pressing portion P6 may be a region including a plurality of imprint shots 22. For example, even if the upper surface of the pressing portion P6 has the same area as the region including the cross-shaped dripping region A1 described in the first embodiment and the four imprint shots 22 around the dripping region A1. Good. Further, the upper surface shape of the pressing portion P6 may be the same size as or larger than the area including all the imprint shots 22 on the wafer W. In this case, the upper surface shape of the pressing portion P <b> 6 includes substantially the same shape as the entire imprint shot area 21.

  Thus, by making the pressing portion P6 into a flat plate shape, the pressing portion P6 can be brought into contact with the resist 13X even if the resist 13X is dropped on any region of the inter-imprint shot region 21. .

  As described above, according to the third embodiment, since the resist 13Y is embedded in the inter-imprint shot area 21 using the embedded template T6, the wafer W after imprinting is processed as in the first embodiment. In addition, it is possible to reduce the influence from the lower layer portion of the area 21 between imprint shots.

  In addition, since the pressing portion P6 can be brought into contact with the resist 13X even if the resist 13X is dropped on any region between the imprint shot regions 21, the pressing process of the resist 13X with the embedded template T6 is efficiently repeated. It becomes possible. Further, since the pressing portion P6 is a flat convex portion, it is possible to easily perform alignment when the embedded template T6 is brought into contact with the resist 13X.

(Fourth embodiment)
Next, a fourth embodiment of the present invention will be described with reference to FIGS. In the fourth embodiment, the resist 13 </ b> Y is buried all together in the entire area 21 between imprint shots of the wafer W.

  FIG. 12 is a diagram illustrating a configuration of an embedded template according to the fourth embodiment. The embedding template T7 has a pressing portion P7 that can collectively press the resist 13X dropped onto all the imprint shot areas 21 on the wafer W. The pressing portion P7 is configured by joining a plurality of annular convex portions in a matrix. FIG. 12 shows a case where three convex portions are arranged in the Y direction and four are arranged in the X direction so that the convex portions having an annular upper surface are arranged in a lattice pattern.

  FIG. 13 is a diagram illustrating an example of a dripping region according to the fourth embodiment. FIG. 13 shows a view of the wafer W as seen from above, as in FIG. The dropping area A7 shown in FIG. 13 is an area where the resist 13X is dropped when the resist 13Y is embedded using the embedding template T7 shown in FIG. The dropping region A7 is a lattice-shaped region having the same shape as the pressing portion P7.

  After the resist pattern 12Y is formed on the imprint shot 22, the resist 13X is dropped on all the areas between imprint shots 21 (dropping area A7). Then, the upper surface of the pressing portion P7 is pressed against the resist 13X.

  The upper surface of the pressing portion P7 is configured to be slightly smaller than the dropping region A7. With this configuration, when the pressing portion P7 is pressed against the resist 13X, the pressing portion P7 does not collide with the formed resist pattern 12Y.

  Note that the resist 13X may not be dropped on the outermost peripheral portion of the dropping region A7. In this case, it is not necessary to provide a convex portion on the outermost peripheral portion of the pressing portion P7.

  Alternatively, the inside of the annular shape constituting the pressing portion P7 may be embedded, and the pressing portion P7 may be a substantially flat convex portion. In this case, the template T7 has substantially the same shape as the template T6. When the pressing portion P7 is a substantially flat convex portion, the resist 13X is dropped onto the dropping region A7 up to a position higher than the surrounding pattern 41. Accordingly, the pressing portion P7 can be brought into contact with the resist 13X without the pressing portion P7 being in contact with the transfer pattern 42.

  Thus, according to the fourth embodiment, since the resist 13Y is embedded in the inter-imprint shot area 21 using the embedding template T7, the resist 13Y can be embedded in the inter-imprint shot area 21 at once. . Therefore, the resist 13Y can be embedded in the area 21 between imprint shots in a short time.

(Fifth embodiment)
Next, a fifth embodiment of the present invention will be described with reference to FIG. In the fifth embodiment, the pattern density of the pressing portion is set to be approximately the same as the pattern density of the imprint shot 22.

  FIG. 14 is a diagram showing a configuration of an embedded template according to the fifth embodiment. The embedded template T8 shown in FIG. 14 has a pressing portion P8 configured with a predetermined template pattern. The template pattern of the pressing portion P8 has substantially the same pattern density as the pattern density of the imprint shot 22.

  The pressing portion P8 has a configuration in which a template pattern is provided in the embedded template T1 shown in FIG. In other words, the pressing part P8 is formed by arranging the template pattern in the area of the pressing part P1.

  Thus, when the resist 13Y is embedded in the interimprint shot area 21 using the template T8, a resist pattern (resist 13Y) having a pattern density substantially the same as that of the imprint shot 22 can be formed in the interimprint shot area 21. It becomes possible.

  Note that the template pattern of the pressing portion P8 may have a pattern density substantially the same as the pattern density in the vicinity of the outer peripheral portion of the imprint shot 22. Moreover, you may comprise the pressing part P8 by arrange | positioning a template pattern in any area | region of the pressing parts P2-P7.

  Thus, according to the fifth embodiment, since the resist 13Y is embedded in the inter-imprint shot area 21 using the embedded template T8, a resist pattern having substantially the same pattern density as the imprint shot 22 is embedded in the inter-imprint shot area 21. Can be formed. Therefore, it is possible to reduce the influence of the pattern density when processing the wafer W after imprinting.

(Sixth embodiment)
Next, a sixth embodiment of the present invention will be described with reference to FIG. In the sixth embodiment, when a pattern defect region or the like occurs in the resist pattern 12Y, the resist 13Y is embedded in the pattern defect region.

  FIG. 15 is a view for explaining a resist embedding process according to the sixth embodiment. FIG. 15 shows a view of the wafer W as viewed from above, as in FIG. As shown in FIG. 15A, a resist pattern 12 </ b> Y is formed on a plurality of imprint shots 22 on the wafer W. In such a case, a pattern defect area A10 or the like may occur in any imprint shot 22. The pattern defect area A10 is an area in the resist pattern 12Y where a pattern defect has occurred due to a device failure or particle generation, and as a result, the resist pattern 12Y has not been formed.

  After the resist pattern 12Y is formed on each imprint shot 22, as shown in FIG. 15B, the resist 13X is dropped on the pattern defect area A10. After the resist 13X is dropped on the pattern defect area A10, the embedded template T6 or the like is pressed against the resist 13X, and then the resist 13X is irradiated with UV light. As a result, as shown in FIG. 15C, the hardened resist 13Y is embedded in the pattern defect area A10. Note that the template pressed against the resist 13X is not limited to the template T6 and may be another template.

  As described above, according to the first to sixth embodiments, it is possible to reduce the influence from the lower layer portion or the like when processing the wafer W after imprinting.

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  DESCRIPTION OF SYMBOLS 1 ... Imprint apparatus, 8 ... Droplet dropping apparatus, 12X, 13X, 13Y ... Resist, 12Y ... Resist pattern, 21 ... Area between imprint shots, 22 ... Imprint shot, A1-A5, A7 ... Dropping area, L1 ... UV light, P1 to P8 ... pressing part, T1 to T8 ... embedding template, Tx ... transfer template, W ... wafer.

Claims (11)

A plurality of imprints can be obtained by dropping a first resist as a transfer material on a substrate to be processed and then transferring the template pattern formed on the first template to the first resist a plurality of times. An imprint step for forming a transfer pattern on the shot;
A dropping step of dropping a second resist in a region between imprint shots, which is a region between the imprint shots;
Contacting the second resist with a second template different from the first template, thereby filling the region between the imprint shots with the second resist; and
A curing step of irradiating the second resist with curing light to cure the second resist, and embedding the region between the imprint shots with the second resist cured;
A mold release step of separating the second template from the second resist;
Including
The second template has a first convex region that is brought into contact with the second resist, and an upper surface of the first convex region has substantially the same shape as a part of the region between the imprint shots. And approximately the same size,
The imprint shot is a rectangular region, and each imprint shot is arranged in a matrix on the substrate to be processed,
The top surface shape is a cross-shaped region having a central region and four rectangular regions extending from the central region;
When the second template is brought into contact with the second resist, the first convex region is arranged so that the cross-shaped region is close to four imprint shots arranged in a lattice pattern. Brought into contact with the resist,
Of the cross-shaped regions, each of the rectangular regions has a first side longer than half the length of one side of the imprint shot to be brought close to, and a length substantially the same as the width between the imprint shots. And an imprint method comprising: a second side having the second side. A plurality of imprints can be obtained by dropping a first resist as a transfer material on a substrate to be processed and then transferring the template pattern formed on the first template to the first resist a plurality of times. An imprint step for forming a transfer pattern on the shot;
A dropping step of dropping a second resist in a region between imprint shots, which is a region between the imprint shots;
Contacting the second resist with a second template different from the first template, thereby filling the region between the imprint shots with the second resist; and
A curing step of irradiating the second resist with curing light to cure the second resist, and embedding the region between the imprint shots with the second resist cured;
A mold release step of separating the second template from the second resist;
The imprint method characterized by including.   The second template has a first convex region that is brought into contact with the second resist, and an upper surface of the first convex region has substantially the same shape as a part of the region between the imprint shots. The imprint method according to claim 2, wherein the imprint methods have substantially the same size. The imprint shot is a rectangular region, and each imprint shot is arranged in a matrix on the substrate to be processed,
The top surface shape is a cross-shaped region having a central region and four rectangular regions extending from the central region;
When the second template is brought into contact with the second resist, the first convex region is arranged so that the cross-shaped region is close to four imprint shots arranged in a lattice pattern. The imprint method according to claim 3, wherein the imprint method is brought into contact with a resist.   Of the cross-shaped regions, each of the rectangular regions has a first side longer than half the length of one side of the imprint shot to be brought close to, and a length substantially the same as the width between the imprint shots. The imprint method according to claim 4, further comprising: a second side having the second side. Preparing a plurality of second templates having different top shapes,
The imprint method according to claim 3, wherein any one of the second templates is brought into contact with the second resist for each position of the area between the imprint shots.   The second template has a second convex region that is brought into contact with the second resist, and an upper surface of the second convex region has substantially the same shape as the entire region between the imprint shots, and The imprinting method according to claim 2, wherein the imprinting method includes regions having substantially the same size.   The second template has a third convex region brought into contact with the second resist, and an upper surface of the third convex region has at least one imprint shot region and the imprint. The imprint method according to claim 2, wherein the imprint method has a region having substantially the same shape and the same size as a region including a part of a region between shots.   The second template has a fourth convex region that is brought into contact with the second resist, and the fourth convex region is a pattern density of the imprint shot or an outer peripheral portion of the imprint shot. The imprint method according to claim 2, wherein a pattern having a pattern density substantially the same as the pattern density is formed.   A first resist pattern formed in a first imprint shot on the substrate to be processed, and a second resist pattern formed in a second imprint shot adjacent to the first imprint shot; A template that is brought into contact with a resist dropped in a region between imprint shots, which is a region between. Having a convex region that is brought into contact with the resist;
The template according to claim 10, wherein an upper surface shape of the convex region is substantially the same shape as a part of the region between imprint shots.

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