JP2013069921A - Imprint method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an imprint method that can perform a high-throughput pattern transfer with less defect while achieving long life of a template.SOLUTION: In an imprint method of an embodiment, a resist layer is formed on a processing target film on a substrate. Resist droplets are dropped at a position on the substrate to which a pattern outside region as being region located further outside than a template pattern comes close when a template is pressed against the substrate. Thereafter, the template is brought near the resist layer and the pattern outside region is pressed against the resist droplets. Further, protruded parts of the template pattern are inserted to an intermediate depth in the resit layer until a gap between recessed parts of the template pattern and the resist layer reaches a predetermined distance without any contact between the recessed parts of the template pattern and the resist layer. Thereafter, the resist layer is cured.

Description

  Embodiments described herein relate generally to an imprint method.

  In the manufacture of semiconductor devices, MEMS (Micro Electro Mechanical System) devices, magnetic recording devices, and other electronic devices or magnetic recording media that have a fine structure, as a technology for forming a fine pattern with high productivity, An imprint method in which an original mold is transferred to a substrate has attracted attention.

  In the imprint method, a template on which a pattern to be transferred is formed and a substrate on which a transfer material is dropped are brought into contact with each other to fill a recess in the template with the transfer material. Then, by curing the transfer material in this state, the template pattern is transferred to the transfer material on the substrate.

  In the conventional imprint method, it takes a long time to fill the recess of the template with the transfer material without any defect, which hinders improvement in productivity. In particular, when a contact hole is transferred, the template pattern has a pillar shape, so that the concave portion of the template is widened. For this reason, when filling a transfer material, it becomes easy to chew bubbles. As a result, there are problems that the number of defects increases and the throughput decreases. In addition, the pillar-shaped template pattern has a problem that productivity is lowered because it is easy to break and has a short life. For this reason, it is desired to perform high-throughput pattern transfer with few defects while extending the life of the template.

JP 2009-212449 A

  The problem to be solved by the present invention is to provide an imprint method capable of performing high-throughput pattern transfer with few defects while extending the life of a template.

  According to the embodiment, an imprint method is provided. In the imprint method, a resist layer is formed on a film to be processed on a substrate. Then, when a template having a concavo-convex structure as a template pattern is pressed against the substrate, a resist droplet is dropped at a position on the substrate where a pattern outer region that is an outer region from the template pattern comes close. To do. Thereafter, the template is brought close to the resist layer, the outer region of the pattern is pressed against the resist droplet, and the concave portion of the template pattern and the resist are not brought into contact with the concave portion of the template pattern and the resist layer. The convex portion of the template pattern is pierced to a midway depth in the resist layer until the gap between the layers reaches a predetermined distance. And after the convex part of the said template pattern is stabbed in the said resist layer, the said resist layer is hardened.

FIG. 1 is a diagram illustrating a configuration of an imprint apparatus according to the first embodiment. FIG. 2 is a diagram for explaining an imprint pattern forming process procedure according to the first embodiment. FIG. 3 is a diagram for explaining an imprint pattern formation processing procedure according to the second embodiment. FIG. 4 is a diagram illustrating the configuration of the imprint apparatus according to the second embodiment. FIG. 5 is a diagram for explaining an imprint pattern forming process procedure according to the third embodiment. FIG. 6 is a diagram for explaining an imprint pattern formation processing procedure according to the fourth embodiment. FIG. 7 is a diagram illustrating a configuration of a template according to the fifth embodiment. FIG. 8 is a diagram for explaining the arrangement positions of the resist droplets.

  Hereinafter, an imprint method according to an embodiment will be described in detail with reference to the accompanying drawings. Note that the present invention is not limited to these embodiments.

(First embodiment)
FIG. 1 is a diagram illustrating a configuration of an imprint apparatus according to the first embodiment. The imprint apparatus 101A is an apparatus that transfers a template pattern (circuit pattern or the like) of a template (original plate) T1 onto a transfer substrate (substrate to be processed) such as a wafer W.

  The imprint apparatus 101A according to the present embodiment prevents the first resist (resist layer 33B, which will be described later) as a transfer material from contacting the concave portion (the bottom surface of the concave portion) of the template pattern formed on the template T1. The convex portion is pierced to a halfway depth of the resist layer 33B (pattern forming layer) on the wafer W, thereby transferring the template pattern to the resist layer 33B. Therefore, the imprint apparatus 101A uses the second resist droplet (having a predetermined viscosity) in a region (for example, a peripheral region) other than the pattern formation region on the wafer W covered with the resist 33 layer B. A resist droplet 40) to be described later is dropped. The peripheral region has the same height as the bottom surface of the recess. When the template and the droplet on the wafer W come into contact with each other and spread, a gap is provided between the peripheral region and the upper surface of the resist layer 33B, whereby the recess (bottom surface) of the template pattern and the upper surface of the resist layer 33B are formed. A gap is provided between them. As a result, the convex portion of the template pattern is pierced to a halfway depth of the resist layer 33B.

  The imprint apparatus 101A includes a control apparatus 1A, an original stage 2, a substrate chuck 4, a sample stage 5, a reference mark 6, an alignment sensor 7, a droplet dropping device 8, a stage base 9, a UV light source 10, a stage base plate 11, a CCD (Charge Coupled Device) A camera 12 and an original transport arm 13 are provided.

  The stage base plate 11 has a horizontal main surface, and the sample stage 5 moves on the main surface. The sample stage 5 places the wafer W and moves in a plane parallel to the placed wafer W (in a horizontal plane). The sample stage 5 moves the wafer W to the lower side of the droplet dropping device 8 when the resist droplet 40 as a transfer material is dropped on the wafer W, and the wafer W when performing the stamping process on the wafer W. Is moved to the lower side of the template T1.

  A substrate chuck 4 is provided on the sample stage 5. The substrate chuck 4 fixes the wafer W at a predetermined position on the sample stage 5. A reference mark 6 is provided on the sample stage 5. The reference mark 6 is a mark for detecting the position of the sample stage 5 and is used when the wafer W is loaded on the sample stage 5.

  The stage base 9 supports the template T1 and the like, and presses the template pattern of the template T1 against the resist layer 33B on the wafer W. The stage base 9 moves in the vertical direction (vertical direction), thereby pressing the template T1 against the resist layer 33B and separating (releasing) the template T1 from the resist layer 33B.

  An original stage 2 is provided on the bottom surface side (wafer W side) of the stage base 9. The original stage 2 fixes the template T1 at a predetermined position from the back side of the template T1 (the surface on which the template pattern is not formed) by vacuum suction or the like. An alignment sensor 7 is provided on the stage base 9. The alignment sensor 7 is a sensor that detects the position of the wafer W and the position of the template T1.

  The droplet dropping device 8 is a device that drops the resist droplet 40 on the wafer W. The droplet dropping device 8 is, for example, an ink jet type resist dropping device. The UV light source 10 is a light source that irradiates UV light, and is provided above the stage base 9. For example, the UV light source 10 emits UV light from above the template T1 in a state where the template T1 is pressed against the resist droplet 40.

  The CCD camera 12 is a camera that captures an image of the resist layer 33B in which the template pattern is inserted through a substantially transparent template T1. The CCD camera 12 is provided above the stage base 9.

  The original transport arm 13 is an arm that transports the template T1 in the imprint apparatus 101A. The original transport arm 13 transports the template T1 carried in from the outside of the imprint apparatus 101A to the position of the original stage 2.

  The control device 1A controls the original stage 2, the substrate chuck 4, the sample stage 5, the alignment sensor 7, the droplet dropping device 8, the stage base 9, the UV light source 10, the stage base plate 11, the CCD camera 12, and the original conveying arm 13.

  Further, the control device 1A of the present embodiment drops the amount of the resist droplet 40 dropped from the droplet dropping device 8 onto the wafer W so that the gap between the concave portion of the template pattern and the resist layer 33B becomes a desired distance. , The dropping position, the stamping time of the template T1, and the like are controlled. The viscosity of the resist droplet 40 and the temperature and humidity in the vicinity of the resist droplet 40 may be adjusted in advance so that the gap between the concave portion of the template pattern and the resist layer 33B becomes a desired distance. Further, not only the temperature near the resist droplet 40 but also the temperature of the template T1 and the resist layer 33B may be adjusted. By adjusting the dropping amount, dropping position, viscosity, temperature, humidity, ambient environment, and the like of the resist droplet 40, the template T1 can be moved to a desired depth (intermediate position) by impressing the template T1 for a predetermined time. It becomes possible to pierce the resist layer 33B.

  When imprinting on the wafer W, a resist layer 33B is provided on the wafer W in advance. Thereafter, a resist droplet 40 is dropped on the wafer W in a peripheral region other than the pattern formation region. Thereafter, the wafer W is moved directly below the template T1. Then, the peripheral region of the template pattern is pressed against the resist droplet 40 on the wafer W, and the convex portion of the template pattern is pierced into the resist layer 33B.

  After the convex portion of the template pattern is inserted to a predetermined depth of the resist layer 33B, the template T1 is separated from the resist layer 33B (release). Thereafter, a resist layer (an imprint pattern 34 to be described later) in which holes are formed by the convex portions of the template pattern is cured, so that a transfer pattern corresponding to the template pattern is patterned on the wafer W.

  Next, a detailed procedure for forming an imprint pattern by the imprint apparatus 101A will be described. FIG. 2 is a diagram for explaining an imprint pattern forming process procedure according to the first embodiment.

  As shown in FIG. 2A, a processed film (insulating layer, metal layer, semiconductor layer, etc.) 32 is formed on the substrate 31 in advance on the wafer W, and a resist layer 33A is formed on the processed film 32. Apply (film formation). The resist layer 33A is spin-coated on the wafer W by, for example, a resist coating device (coater). The resist layer 33A is, for example, a UV curable resin.

  The wafer W coated with the resist layer 33 </ b> A is placed on the sample stage 5 and conveyed below the UV light source 10. 2B, the resist layer 33A is semi-cured to a predetermined hardness by irradiating the entire surface of the wafer W with UV light from the UV light source 10, whereby the resist layer 33A is made to be a resist layer 33B. To change. The UV light applied to the wafer W is light including a wavelength (for example, 310 nm) that can cure the resist layer 33A (UV curable resin). As a result, the resist layer 33B is not completely cured (semi-cured), and becomes hard enough to pierce the convex portion of the template pattern.

  Thereafter, the wafer W placed on the sample stage 5 is moved to just below the droplet dropping device 8. Then, as shown in FIG. 2C, a resist droplet 40 is dropped by the droplet dropping device 8. The position where the resist droplet 40 is dropped is a peripheral region other than the pattern formation region on the wafer W. In other words, when the template T1 is pressed against the wafer W, the resist droplet 40 is dropped at a position on the wafer W where the pattern outer region that is an outer region from the template pattern comes close.

  Thereafter, the wafer W on the sample stage 5 is moved directly below the template T1. Then, as shown in FIG. 2D, the peripheral area of the template pattern (pattern outer area) is pressed against the resist droplet 40 on the wafer W, and the convex part of the template pattern is pierced into the resist layer 33B. It is. Then, when the concave portion of the template pattern and the resist layer 33B are not in contact with each other and the distance between the concave portion of the template pattern and the resist layer 33B becomes a desired gap, the insertion (stamping) of the convex portion of the template pattern is stopped. As described above, since the resist droplet 40 has a predetermined viscosity, the template pattern convex portion is pierced into the resist layer 33B to a desired depth without bringing the template pattern concave portion into contact with the resist layer 33B. Can be included. The control device 1A controls the dropping amount of the resist droplet 40, the dropping position, the stamping time of the template T1, and the like so that the gap between the concave portion of the template pattern and the resist layer 33B becomes a desired distance.

  After the convex portion of the template pattern is inserted to a predetermined depth of the resist layer 33B, the template T1 is separated from the resist layer 33B (release) as shown in FIG. As a result, the imprint pattern 34 is transferred to the resist layer 33B. Thereafter, the resist droplet 40 is volatilized.

  Thereafter, the imprint pattern 34 (for one shot) is completely cured by irradiating the imprint pattern 34 with UV light from the UV light source 10 as shown in FIG. In order to irradiate the imprint pattern 34 (one shot) with UV light, for example, the UV light source 10 irradiates the imprint pattern 34 with UV light through a light shielding band 50 provided in the imprint apparatus 101A. The light shielding band 50 is manufactured using a member that shields UV light. The light shielding band 50 has a ring shape in which an opening is provided in a region corresponding to one shot of the imprint pattern 34.

  The UV light applied to the imprint pattern 34 is light including a wavelength (for example, 310 nm) that can cure the imprint pattern 34. In this manner, the imprint pattern 34 having holes formed by the convex portions of the template pattern is cured, whereby a transfer pattern 35 corresponding to the template pattern is formed on the resist layer 33B on the wafer W.

  Further, the processes of (c) to (f) in FIG. 2 are repeated for each shot. Thereby, the transfer pattern 35 is formed on all the shots of the wafer W by the step & repeat method as shown in FIG. In other words, in the present embodiment, the stamp process of the template T1 is performed for each shot, and the imprint pattern 34 after the stamp is cured for each shot.

  In the present embodiment, the case where the imprint pattern 34 is irradiated with UV light after being released has been described. However, in the state where the convex portion of the template pattern is inserted to a predetermined depth of the resist layer 33B, the UV light is irradiated. May be irradiated. In this case, the imprint pattern 34 is cured by irradiating with UV light, and thus the mold is released after the transfer pattern 35 is formed.

  In this embodiment, the case where the resist layer 33A is spin-coated on the wafer W by the resist coating apparatus has been described. However, the resist layer 33A may be formed by using an ink jet type resist dropping apparatus. The inkjet-type resist dropping device used for forming the resist layer 33A may be the droplet dropping device 8 or a device other than the droplet dropping device 8.

  Further, the processing described in FIG. 2C may be performed before the processing described in FIG. That is, after dropping the resist droplet 40, the entire surface of the wafer W may be irradiated with UV light from the UV light source 10 to change the resist layer 33A to the semi-cured resist layer 33B. The template pattern may be a contact hole pattern or a line & space pattern.

  Thus, since the imprint apparatus 101A pierces the resist layer 33B with the convex portion of the template pattern without bringing the concave portion of the template pattern into contact with the resist layer 33B, it is possible to prevent the engraving of the resist layer 33B. In addition, there is no bubble biting and it is not necessary to use capillary action for filling the resist, so the filling time of the resist layer 33B into the template T1 is shortened, and an imprint pattern can be formed in a short time. It becomes. As a result, the transfer pattern 35 can be formed with high throughput.

  Further, since the concave portion of the template pattern is not in contact with the resist layer 33B, the contact area between the template T1 and the resist layer 33B is reduced. For this reason, it is possible to reduce the peeling force applied to the template T1 at the time of mold release. Therefore, the damage of the template pattern is reduced and the template T1 is not easily broken. As a result, the template T1 can be used for a long time.

  Further, since the resist layer 33A is changed to the resist layer 33B having a predetermined hardness by exposing the resist layer 33A in advance, the concave portion of the template pattern is kept at a predetermined distance with respect to the liquid resist layer 33A. Compared to the above, it becomes easier to adjust the gap between the recess and the resist layer 33B.

  Further, since the dropping amount of the resist droplet 40, the dropping position, the imprinting time of the template T1, and the like are controlled, it is possible to easily prevent contact between the recess of the template pattern and the resist layer 33B. Yes. Further, the controllability is improved because the size of the gap between the recess of the template pattern and the resist layer 33B is controlled by the dropping amount of the resist droplet 40.

  As described above, according to the first embodiment, imprinting is performed by providing a gap between the recess of the template pattern and the resist layer 33 </ b> B by using the resist droplet 40. Therefore, it is possible to perform high-throughput pattern transfer with few defects while extending the life of the template T1.

(Second Embodiment)
Next, a second embodiment of the present invention will be described with reference to FIG. In the second embodiment, a convex portion (convex shape pattern) is provided at a position on the template in contact with the resist droplet 40.

  FIG. 3 is a diagram for explaining an imprint pattern formation processing procedure according to the second embodiment. Description of processing similar to the processing described in FIG. 2 among the processing illustrated in FIG. 3 is omitted.

  The processes shown in (a) to (c) of FIG. 3 are the same as the processes shown in (a) to (c) of FIG. That is, a film to be processed 32 is formed on the substrate 31 of the wafer W, and a resist layer 33A is applied on the film to be processed 32. Then, the resist layer 33A is changed to a semi-cured resist layer 33B by irradiating the entire surface of the wafer W with UV light from the UV light source 10. Further, a resist droplet 40 is dropped on a peripheral area other than the pattern formation area on the wafer W.

  Thereafter, the wafer W on the sample stage 5 is moved directly below a template T2, which will be described later. As shown in FIG. 3D, the convex pattern 45 provided in the peripheral region of the template pattern of the template T2 is pressed against the resist droplet 40 on the wafer W, and the convex portion of the template pattern. Is embedded in the resist layer 33B.

  Thus, in the present embodiment, the convex pattern 45 is pressed against the resist droplet 40. Thereby, it becomes possible to easily control the distance between the recess of the template pattern and the resist layer 33B. The convex pattern 45 is, for example, the same height as the convex portion of the template pattern. The convex pattern 45 may be lower or higher than the convex part of the template pattern. Further, the area when the convex pattern 45 is viewed from the upper surface is, for example, smaller than the area when the resist droplet 40 is viewed from the upper surface. The area when the convex pattern 45 is viewed from the upper surface may be equal to or larger than the area when the resist droplet 40 is viewed from the upper surface.

  When the concave portion of the template pattern and the resist layer 33B do not come into contact with each other and the distance between the concave portion of the template pattern and the resist layer 33B becomes a desired gap, the pressing of the convex pattern 45 is stopped. The control device 1A removes the resist droplet 40 from the top surface so that the drop amount of the resist droplet 40, the dropping position, the stamping time of the template T2, and the resist droplet 40 are adjusted so that the gap between the concave portion of the template pattern and the resist layer 33B is a desired distance. The area (viscosity of the resist droplet 40) when viewed is controlled. Further, the shape (upper surface dimension, depth, etc.) of the convex pattern 45 is designed so that the gap between the concave portion of the template pattern and the resist layer 33B becomes a desired distance.

  In a state where the convex portion of the template pattern is inserted to a predetermined depth of the resist layer 33B, UV light is irradiated onto the template T2 from the UV light source 10 through the light shielding band 50 as shown in FIG. Is done. Thereby, the resist layer 33B (one shot) located below the opening of the light shielding band 50 is completely cured.

  Thereafter, as shown in FIG. 3F, the template T2 is separated from the resist layer 33B (release). Thereby, the transfer pattern 35 is formed in the resist layer 33B. Further, a transfer pattern 36 corresponding to the convex pattern 45 is formed at the position of the resist droplet 40. Since the transfer pattern 36 is formed in the peripheral area of the template pattern, it does not affect the template pattern.

  Thereafter, similarly to the process described with reference to (g) of FIG. 2, the processes of (c) to (f) of FIG. 3 are repeated for each shot. Thereby, the transfer pattern 35 is formed on all shots of the wafer W by the step & repeat method.

  In the present embodiment, the case where the UV light is irradiated in a state where the convex portion of the template pattern is pierced to a predetermined depth of the resist layer 33B has been described, but the UV light may be irradiated after the mold release. Good.

  Thus, according to the second embodiment, the convex pattern 45 is provided on the template T2, and the convex pattern 45 is pressed against the resist droplet 40. Therefore, it is possible to easily control the gap between the recess of the template pattern and the resist layer 33B. Further, since imprinting is performed by providing a gap between the concave portion of the template pattern and the resist layer 33B, it is possible to obtain the same effect as in the first embodiment.

(Third embodiment)
Next, a third embodiment of the present invention will be described with reference to FIGS. In the third embodiment, the template T1 is pierced into the resist layer 33B to a desired depth based on the pressure for pressing the template T1 against the resist layer 33B.

  FIG. 4 is a diagram illustrating the configuration of the imprint apparatus according to the second embodiment. 4 that are the same as those of the imprint apparatus 101A according to the first embodiment shown in FIG. 1 are assigned the same reference numerals, and redundant descriptions are omitted. The imprint apparatus 101B of the present embodiment includes a pressure measurement unit 20 in addition to the same functions as the imprint apparatus 101A described in the first embodiment. Further, the imprint apparatus 101B includes a control apparatus 1B instead of the control apparatus 1A.

  The pressure measuring unit 20 is disposed, for example, in the vicinity of the original stage 2. Specifically, the pressure measuring unit 20 is disposed at a position where it comes into contact with the back surface of the template T1 when the original stage 2 supports the template T1.

  The pressure measuring unit 20 measures the pressing pressure applied to the template T1 when the template T1 is pressed against the resist layer 33B. The pressure measurement unit 20 sends the measured pressing pressure (measurement result) to the control device 1B.

  In addition to the same function as the control device 1A, the control device 1B has a seal control function based on the measurement result sent from the pressure measurement unit 20. Specifically, the control device 1B causes the template T1 to be inserted into the resist layer 33B until the measurement result from the pressure measurement unit 20 exceeds a predetermined threshold value. Furthermore, when the measurement result from the pressure measurement unit 20 exceeds a predetermined threshold value, the control device 1B pulls out the template T1 from the resist layer 33B. The threshold value is a value set such that the gap between the recess of the template pattern and the resist layer 33B is a desired distance. In other words, the value of the pressing pressure when the gap between the recess of the template pattern and the resist layer 33B reaches a desired distance is set as the threshold value.

  FIG. 5 is a diagram for explaining an imprint pattern forming process procedure according to the third embodiment. Description of processing similar to that described in FIGS. 2 and 3 in the processing illustrated in FIG. 5 is omitted.

  The processes shown in (a) and (b) of FIG. 5 are the same as the processes shown in (a) and (b) of FIG. That is, a film to be processed 32 is formed on the substrate 31 of the wafer W, and a resist layer 33A is applied on the film to be processed 32. Then, the resist layer 33A is changed to a semi-cured resist layer 33B by irradiating the entire surface of the wafer W with UV light from the UV light source 10.

  Thereafter, the wafer W on the sample stage 5 is moved directly below the template T1. Then, as shown in FIG. 5C, the template T1 is inserted into the resist layer 33B. While the template T1 is embedded in the resist layer 33B, the pressure measurement unit 20 measures the pressing pressure applied to the template T1, and sends the measurement result to the control device 1B.

  The control device 1B causes the template T1 to be inserted into the resist layer 33B until the measurement result from the pressure measurement unit 20 exceeds a predetermined threshold value. Then, when the measurement result from the pressure measurement unit 20 exceeds a predetermined threshold, the control device 1B pulls out the template T1 from the resist layer 33B.

  Thereafter, by the same processing as the processing described in FIGS. 2E to 2G, release pattern, UV irradiation, formation of the transfer pattern 35 by the step & repeat method, and the like are performed. The transfer pattern 35 may be formed by UV irradiation, mold release, step-and-repeat method, or the like by the same process as described with reference to (e) to (g) of FIG. Further, imprinting may be performed using the template T2 instead of the template T1.

  As described above, according to the third embodiment, since the distance between the concave portion of the template pattern and the resist layer 33B is controlled based on the measurement result of the pressing pressure by the pressure measuring unit 20, the concave portion of the template pattern It is possible to easily control the distance to the resist layer 33B.

(Fourth embodiment)
Next, a fourth embodiment of the present invention will be described with reference to FIG. In the fourth embodiment, after the imprint pattern 34 is formed on the entire surface of the wafer W, the entire surface of the wafer W is irradiated with UV light, and all the imprint patterns 34 are cured at once.

  FIG. 6 is a diagram for explaining an imprint pattern formation processing procedure according to the fourth embodiment. Of the processes shown in FIG. 6, the description of the same processes as those described in FIG. 5 is omitted.

  The processes shown in (a) to (c) of FIG. 6 are the same as the processes shown in (a) to (c) of FIG. That is, a film to be processed 32 is formed on the substrate 31 of the wafer W, and a resist layer 33A is applied on the film to be processed 32. Then, the resist layer 33A is changed to a semi-cured resist layer 33B by irradiating the entire surface of the wafer W with UV light from the UV light source 10. Further, the template T1 is inserted into the resist layer 33B while measuring the pressing pressure applied to the template T1 by the pressure measuring unit 20. Then, when the measurement result from the pressure measurement unit 20 exceeds a predetermined threshold, the control device 1B pulls out the template T1 from the resist layer 33B. Thereby, the imprint pattern 34 is formed in the resist layer 33B.

  Thereafter, as shown in FIG. 6D, the position of the wafer W is moved with respect to the template T1 so that the template pattern is transferred to the next shot position. Then, the process of FIG. 6C is repeated for each shot. Thereby, the imprint pattern 34 is formed on all shots of the wafer W by the step & repeat method.

  Then, by irradiating UV light from the UV light source 10 to the entire surface of the wafer W (all the imprint patterns 34), as shown in FIG. 6E, all the imprint patterns 34 (the entire surface of the wafer W). Is completely cured. In other words, in the present embodiment, the stamping process of the template T1 is performed for each shot, and the curing process of the imprint pattern 34 after the stamping is performed collectively. Thereby, the transfer pattern 35 is collectively formed on the entire surface of the wafer W.

  As described in the first embodiment and the second embodiment, the resist droplet 40 may be dropped on a peripheral region other than the pattern formation region on the wafer W. Further, imprinting may be performed using the template T2 instead of the template T1.

  Further, in the present embodiment, the case where the entire surface of the wafer W is irradiated with UV light and all the imprint patterns 34 are cured at once has been described. However, the UV light is applied to the entire surface of the wafer W in two or more steps. It may be irradiated. In this case, the process of irradiating the plurality of imprint shots with UV light is repeated on the wafer W.

  As described above, according to the fourth embodiment, the curing process of the imprint pattern 34 is performed in a lump, so that the transfer pattern 35 can be formed easily and in a short time. Further, since the light shielding band 50 is not required, it is possible to perform imprint processing with a simple apparatus configuration.

(Fifth embodiment)
Next, a fifth embodiment of the present invention will be described with reference to FIGS. In the fifth embodiment, instead of providing the light shielding band 50 in the imprint apparatus 101A, a light shielding film is disposed on the template.

  FIG. 7 is a diagram illustrating a configuration of a template according to the fifth embodiment. The template T3 of this embodiment is provided with a light shielding film 63 in the outer peripheral region. As shown in the top view of FIG. 7A, in the template T3, a template pattern 62 is formed at the center, and a ring-shaped peripheral region 61 is provided around the template pattern 62. A ring-shaped light shielding film 63 is provided in a region outside the peripheral region 61. The peripheral area 61 is a margin area provided so that the template patterns 62 between adjacent shots do not overlap each other. The peripheral area 61 is used as an area pressed against the resist droplet 40 when the resist droplet 40 is used, for example. The light shielding film 63 is configured using a material that does not transmit light having a wavelength that cures the resist layer 33B (for example, a metal film such as Cr).

  The region where the light-shielding film 63 is arranged on the template T3 is a region where one shot of the wafer W is irradiated with UV light and the other regions are not irradiated with UV light. By using the template T3 having the light shielding film 63, the UV light is irradiated to the same region as when the UV light is irradiated using the light shielding band 50.

  As shown in the cross-sectional view of FIG. 7B, the light shielding film 63 is disposed, for example, on the surface side of the template T3 (the side where the template pattern is formed). Then, at the time of imprinting, as shown in FIG. 7C, UV light is irradiated from the back side of the template T3 in a state where the convex portion of the template pattern is inserted into the resist layer 33B to a desired position. Is done. The light shielding film 63 may be disposed on the back side of the template T3.

  Next, the arrangement position (dropping position) of the resist droplet 40 described in the first embodiment and the second embodiment will be described. FIG. 8 is a diagram for explaining the arrangement positions of the resist droplets. In FIG. 8, a top view of a partial region on the wafer W is shown.

  An inter-shot area (inter-pattern area between template patterns) of the imprint shot is a scribe line (dicing line) 70. Specifically, the region between the upper region 71 on the wafer W corresponding to the peripheral region 61 and the region 71 adjacent to this region 71 is the scribe line 70. An area on the wafer W corresponding to the template pattern 62 is a pattern formation area 72. The resist droplet 40 is disposed on a scribe line 70 that is an area outside the area 71. The resist droplets 40 are arranged at a plurality of positions for each shot so as to surround the peripheral region 61 of each shot. And each resist droplet 40 is arranged so that it may become point-symmetric for every shot, for example. Further, the resist droplets 40 are arranged so that the resist droplets 40 do not overlap between adjacent shots.

  When a semiconductor device (semiconductor integrated circuit) is manufactured, a resist pattern (transfer pattern 35) corresponding to a template pattern is formed on a wafer by any one or a combination of the imprint methods described in the first to fifth embodiments. Formed on W. Then, the film to be processed 32 is etched using the resist pattern as a mask. Thereby, an actual pattern corresponding to the resist pattern is formed on the wafer W. When the semiconductor device is manufactured, the above-described processing for forming the film to be processed 32, the imprint method, the etching process, and the like are repeated for each layer.

  Thus, according to the fifth embodiment, since the light shielding film 63 is provided on the template T3, it is not necessary to provide the light shielding band 50 on the imprint apparatus 101A or the imprint apparatus 101B. For this reason, the imprint apparatus 101A and the imprint apparatus 101B have a simple apparatus configuration.

  Further, since the resist droplet 40 is disposed on the scribe line 70, there is no gap between the recess of the template pattern and the resist layer 33B without affecting the resist pattern (transfer pattern 35) corresponding to the template pattern. Can be provided.

  As described above, according to the first to fifth embodiments, it is possible to perform high-throughput pattern transfer while extending the life of the template.

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  DESCRIPTION OF SYMBOLS 1A, 1B ... Control apparatus, 8 ... Droplet dropping device, 10 ... UV light source, 20 ... Pressure measuring part, 33A, 33B ... Resist layer, 35 ... Transfer pattern, 40 ... Resist droplet, 61 ... Peripheral area, 62 ... Template Pattern, 101A, 101B ... imprint apparatus, T1-T3 ... template, W ... wafer.

Claims (8)

A resist film forming step of forming a resist layer on a film to be processed on the substrate;
When a template having a concavo-convex structure as a template pattern is pressed against the substrate, a resist droplet is dropped at a position on the substrate where a pattern outer region that is an outer region from the template pattern comes close to. Steps,
A semi-curing step for semi-curing the resist layer to a predetermined hardness. The template is brought close to the resist layer, the outer region of the pattern is pressed against the resist droplet, and the recess of the template pattern and the resist layer are A step of piercing to a halfway depth in the resist layer obtained by semi-curing the convex portion of the template pattern until the gap between the concave portion of the template pattern and the resist layer reaches a predetermined distance without contact;
A curing step of curing the resist layer after the convex portions of the template pattern are pierced into the resist layer;
Including
The distance is adjusted by controlling a droplet amount of the resist droplet and a droplet dropping position of the resist droplet, and a pressing pressure applied to the template when the pattern outer region is pressed against the resist droplet. Based on the above, the convex portion of the template pattern is pierced into the resist layer up to the distance,
The process of inserting the convex portion of the template pattern to the halfway depth in the resist layer is repeated for each imprint shot on the substrate, and then the resist layer is cured together for a plurality of imprint shots. An imprint method characterized by the above. A resist film forming step of forming a resist layer on a film to be processed on the substrate;
When a template having a concavo-convex structure as a template pattern is pressed against the substrate, a resist droplet is dropped at a position on the substrate where a pattern outer region that is an outer region from the template pattern comes close to. Steps,
The template is brought close to the resist layer, the outer region of the pattern is pressed against the resist droplet, and the concave portion of the template pattern and the resist layer are not brought into contact with the concave portion of the template pattern and the resist layer. An embedding step of embedding the convex portion of the template pattern to a halfway depth in the resist layer until a gap between the two becomes a predetermined distance;
A curing step of curing the resist layer after the convex portions of the template pattern are pierced into the resist layer;
The imprint method characterized by including. A semi-curing step of semi-curing the resist layer to a predetermined hardness before pressing the pattern outer region against the resist droplet;
In the piercing step,
The imprint method according to claim 2, wherein the convex portion of the template pattern is inserted to the halfway depth in the semi-cured resist layer.   The imprint method according to claim 2, wherein the distance is adjusted by controlling a droplet amount of the resist droplet and a dropping position of the resist droplet.   The process of inserting the convex portion of the template pattern to the halfway depth in the resist layer is repeated for each imprint shot on the substrate, and then the resist layer is cured together for a plurality of imprint shots. The imprint method according to claim 2, wherein the imprint method is performed.   5. The process of curing the resist layer in a state where the convex portions of the template pattern are pierced to the halfway depth in the resist layer is repeated for each imprint shot on the substrate. The imprint method according to any one of the above.   The convex portion of the template pattern is pierced into the resist layer up to the distance based on a pressing pressure applied to the template when the pattern outer region is pressed against the resist droplet. The imprint method according to any one of 2 to 6. The resist layer is an ultraviolet curable resin,
4. The imprint method according to claim 3, wherein the resist layer is irradiated with ultraviolet rays when the resist layer is semi-cured and when the resist layer is cured.

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