JP2013157844A - Substrate, element substrate, electronic device, oscillator and electronic apparatus - Google Patents

Substrate, element substrate, electronic device, oscillator and electronic apparatus Download PDF

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JP2013157844A
JP2013157844A JP2012017835A JP2012017835A JP2013157844A JP 2013157844 A JP2013157844 A JP 2013157844A JP 2012017835 A JP2012017835 A JP 2012017835A JP 2012017835 A JP2012017835 A JP 2012017835A JP 2013157844 A JP2013157844 A JP 2013157844A
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axis
substrate
piece
electrode
connecting portion
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Osamu Ishii
修 石井
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Seiko Epson Corp
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PROBLEM TO BE SOLVED: To provide an element which allows formation of a small-sized electronic device and in which a break-off part is formed such that a breaking part of the break-off part lies inside a contour of an element piece that restricts a gap between the element piece and an element piece housing part of a package.SOLUTION: A substrate 10 comprises: a plurality of individual pieces 1; a pair of coupling parts 3a, 3b extending from each of the individual pieces 1; and a holding part 2 to which extension ends of the coupling parts are connected. Each of the coupling parts includes a constricted part between an individual-piece connection part to which the individual piece is connected and a holding-part connection part to which the holding part is connected. Each of the individual piece includes a salient 1d which extends from an end of the individual-piece connection part of the individual piece between the pair of coupling parts in an extension direction of the coupling parts. The constricted part is provided a position closer the individual-piece connection part than an end in the extension direction of the salient.

Description

本発明は、基板、素子基板、電子デバイス、発振器、および電子機器に関する。   The present invention relates to a substrate, an element substrate, an electronic device, an oscillator, and an electronic apparatus.

従来、半導体素子(IC)あるいは圧電振動素子などを製造する方法として、一般的にウエハーと呼ばれる基板に、複数の素子をエッチング法などによって形成し、この基板の形態で配線や電極などを形成し、その後、基板から各素子をダイシング、エッチング、あるいは折り取りによって個片化して素子単体を得る方法が知られている。中でも、折り取りにより個片化する方法は、特別な装置や工程を必要とせず、低コストで製造する方法として多用されている。   Conventionally, as a method of manufacturing a semiconductor element (IC) or a piezoelectric vibration element, a plurality of elements are formed on a substrate generally called a wafer by an etching method, and wirings and electrodes are formed in the form of the substrate. Thereafter, a method is known in which each element is separated from the substrate by dicing, etching, or breaking to obtain a single element. In particular, the method of dividing into pieces by folding is not widely required as a method of manufacturing at low cost without requiring a special device or process.

この折り取りによる個片化においては、折り取り部における破断位置のばらつきが大きく、素子個片の寸法のばらつきにも影響するという課題があった。この課題に対して、水晶片とフレーム部とを接続するアーム部に細幅部を形成し、細幅部が破断して水晶片が折り取られる水晶片集合体が提案された(特許文献1)。   In the individualization by this folding, there is a problem that the variation in the breaking position in the broken portion is large, which also affects the variation in the dimensions of the element pieces. In order to solve this problem, there has been proposed a crystal piece assembly in which a narrow portion is formed in an arm portion connecting a crystal piece and a frame portion, and the narrow piece is broken and the crystal piece is broken off (Patent Document 1). ).

特開2006−186847号公報JP 2006-186847 A

しかし、上述の特許文献1であっても、細幅部においては微少であっても凹凸のある破断面になり、特に近年、素子の超小型化によって、微少の凹凸であっても、例えば素子をパッケージに収容する場合に、破断面の凹凸分を考慮して収容寸法を大きくしなければならない、という課題があった。   However, even in the above-mentioned Patent Document 1, even if the narrow width portion is minute, the fracture surface has irregularities, and in recent years, even with minute irregularities due to ultra-miniaturization of elements, for example, elements In the case of housing the package in a package, there has been a problem that the housing size has to be increased in consideration of the unevenness of the fracture surface.

そこで、素子片とパッケージの素子片収容部との隙間を規制する素子片外形から、折り取り部の破断部が内側となるように折り取り部を形成し、小型の電子デバイスに形成することができる素子を提供する。   Therefore, from the outer shape of the element piece that regulates the gap between the element piece and the element piece housing part of the package, the folding part is formed so that the broken part of the folding part is on the inside, and can be formed into a small electronic device. An element capable of being provided is provided.

本発明は、少なくとも上述の課題の一つを解決するように、下記の形態または適用例として実現され得る。   The present invention can be realized as the following forms or application examples so as to solve at least one of the above-described problems.

〔適用例1〕本適用例の基板は、複数の個片と、前記個片から延設されている一対の連結部と、前記連結部の延設端部が接続されている保持部と、を含み、前記連結部は、前記個片が接続されている個片接続部と前記保持部が接続されている保持接続部と、の間にくびれ部が設けられ、前記個片は、前記一対の連結部の間の前記個片の前記個片接続部側端部より、前記連結部の延設方向に延出されている凸部を含み、前記くびれ部が、前記凸部の延出方向端部よりも前記個片接続部側に設けられていることを特徴とする。   [Application Example 1] The substrate of this application example includes a plurality of pieces, a pair of connecting portions extending from the pieces, and a holding portion to which an extended end portion of the connecting portion is connected, The connecting portion is provided with a constriction between the piece connecting portion to which the piece is connected and the holding connecting portion to which the holding portion is connected, and the piece is the pair Including a convex portion extending in the extending direction of the connecting portion from the end portion of the individual piece connecting portion between the connecting portions, and the constricted portion extends in the extending direction of the convex portion. It is provided in the said piece connection part side rather than an edge part, It is characterized by the above-mentioned.

本適用例の基板によれば、基板に形成された個片を基板から切り離す場合、連結部に設けられたくびれ部が破断される。くびれ部に発生する破断部は、制御されない形状、例えばのこぎり歯状、に形成され、個片が基板から切り離された状態の個片単体での寸法にばらつきを発生してしまう。そこで、凸部を予め形成しておき、凸部の延出方向端部よりも破断部が生じるくびれ部が超えない位置に形成することにより、正確な外形寸法を有する個片を得ることができる。従って、電子デバイスに組み立てる場合に、個片を収納するパッケージを小さくすることができ、小型の電子デバイスを得ることができる。   According to the substrate of this application example, when the piece formed on the substrate is separated from the substrate, the constricted portion provided in the connecting portion is broken. The fracture portion generated in the constricted portion is formed in an uncontrolled shape, for example, a sawtooth shape, and the size of the individual piece in a state in which the individual piece is separated from the substrate may vary. Therefore, by forming the convex portion in advance and forming it at a position where the constricted portion where the fracture portion is generated is not exceeded than the end portion in the extending direction of the convex portion, an individual piece having an accurate outer dimension can be obtained. . Therefore, when the electronic device is assembled, the package for storing the individual pieces can be made small, and a small electronic device can be obtained.

〔適用例2〕上述の適用例において、前記凸部の前記延出方向端部と前記保持部との隙間をδとし、前記基板の板厚をtとし、前記δと前記tとの関係が、
δ>t
を満足していることを特徴とする。
Application Example 2 In the application example described above, the gap between the end in the extending direction of the convex portion and the holding portion is δ, the thickness of the substrate is t, and the relationship between δ and the t is ,
δ> t
It is characterized by satisfying.

上述の適用例によれば、基板から個片を折り取る場合に、凸部と保持部との干渉が発生しないため、個片化(折り取り)し易くなり、生産性、歩留まりの低下を抑制することができる。   According to the above application example, when the individual pieces are folded from the substrate, interference between the convex portion and the holding portion does not occur, so that the individual pieces are easily separated (broken), and the reduction in productivity and yield is suppressed. can do.

〔適用例3〕上述の適用例において、前記基板が水晶であり、前記水晶の結晶軸である、電気軸としてのX軸と、機械軸としてのY軸と、光学軸としてのZ軸と、からなる直交座標系の前記X軸を中心として、前記Z軸を前記Y軸の−Y方向へ傾けた軸をZ´軸とし、前記Y軸を前記Z軸の+Z方向へ傾けた軸をY´軸とした場合、前記基板の主面は前記X軸と前記Z´軸に平行であり、前記Y´軸に平行な方向を厚みとし、前記連結部が前記X軸に沿って延在されていることを特徴とする。   Application Example 3 In the application example described above, the substrate is quartz, and the crystal axis of the quartz is an X axis as an electrical axis, a Y axis as a mechanical axis, and a Z axis as an optical axis. An axis obtained by inclining the Z axis in the −Y direction of the Y axis around the X axis of the Cartesian coordinate system comprising the Z ′ axis, and an axis inclining the Y axis in the + Z direction of the Z axis is Y In the case of the 'axis', the main surface of the substrate is parallel to the X axis and the Z 'axis, the thickness is a direction parallel to the Y' axis, and the connecting portion extends along the X axis. It is characterized by.

上述の適用例によれば、要求仕様により適したカット角度で基板を形成することが可能となり、且つ仕様に沿った周波数温度特性を有し、CI値が小さい高周波振動素子を得ることができる。   According to the application example described above, it is possible to form a substrate with a cut angle more suitable for the required specification, and it is possible to obtain a high-frequency vibration element having a frequency temperature characteristic according to the specification and a small CI value.

〔適用例4〕上述の適用例において、前記水晶がATカット水晶であることを特徴とする。   Application Example 4 In the application example described above, the crystal is an AT cut crystal.

上述の適用例によれば、小型の周波数温度特性に優れた高周波振動素子を得ることができる。   According to the application example described above, it is possible to obtain a small high-frequency vibration element having excellent frequency temperature characteristics.

〔適用例5〕上述の適用例において、前記個片に電極が設けられていることを特徴とする。   Application Example 5 In the application example described above, an electrode is provided on the piece.

上述の適用例によれば、一体的に形成された個片を有する基板であるので、電極形成の際の装置への保持を確実にすることができ、取り扱い性、生産性の高い基板を得ることができる。   According to the application example described above, since the substrate has integrally formed pieces, it can be reliably held in the apparatus during electrode formation, and a substrate with high handleability and productivity can be obtained. be able to.

〔適用例6〕本適用例の電子デバイスは、上述の基板から、前記連結部を破断して前記個片を分離して得られる素子と、前記素子が収容されるパッケージと、を備えていることを特徴とする。   Application Example 6 An electronic device according to this application example includes an element obtained by breaking the connecting portion from the substrate and separating the pieces, and a package in which the element is accommodated. It is characterized by that.

本適用例の電子デバイスは、個片に凸部を予め形成しておき、凸部の延出方向端部よりも破断部が生じるくびれ部が超えない位置に形成することにより、正確な外形寸法を有する個片を得ることができる。従って、電子デバイスに組み立てる場合に、個片を収納するパッケージを小さくすることができ、小型の電子デバイスを得ることができる。   The electronic device according to this application example has an accurate external dimension by forming a convex portion on each piece in advance and forming it at a position where the constricted portion where the fracture portion is generated is not exceeded than the end portion in the extending direction of the convex portion. It is possible to obtain an individual piece having Therefore, when the electronic device is assembled, the package for storing the individual pieces can be made small, and a small electronic device can be obtained.

〔適用例7〕本適用例の発振器は、上述の基板から、前記連結部を破断して前記個片を分離して得られる素子と、前記素子を駆動する発振回路と、を備えていることを特徴とする。   Application Example 7 The oscillator according to this application example includes an element obtained by breaking the connecting portion from the substrate and separating the pieces, and an oscillation circuit that drives the element. It is characterized by.

本適用例の発振器は、個片に凸部を予め形成しておき、凸部の延出方向端部よりも破断部が生じるくびれ部が超えない位置に形成することにより、正確な外形寸法を有する個片を得ることができる。従って、発振器に組み立てる場合に、個片を収納するパッケージを小さくすることができ、小型の発振器を得ることができる。   In the oscillator of this application example, the convex portion is formed in advance on the individual piece, and an accurate outer dimension is obtained by forming it at a position where the constricted portion where the fractured portion is generated does not exceed the end portion in the extending direction of the convex portion. Individual pieces can be obtained. Therefore, when assembling the oscillator, the package for storing the individual pieces can be made small, and a small oscillator can be obtained.

〔適用例8〕本適用例の電子機器は、上述の電子デバイスを備えることを特徴とする。   Application Example 8 An electronic apparatus according to this application example includes the above-described electronic device.

本適用例の電子機器は、小型化された電子デバイスを備えることにより、電子回路の小型化が実現できる。   The electronic apparatus according to this application example can be downsized in an electronic circuit by including a downsized electronic device.

第1実施形態に係る基板を示す、(a)は平面図、(b)は(a)に示すA部の拡大平面図、(c)は(b)に示すB−B´部の断面図、(d)は(b)に示すC−C´部の断面図、(e)は(b)に示すD−D´部の断面図。The board | substrate which concerns on 1st Embodiment is shown, (a) is a top view, (b) is an enlarged plan view of the A section shown to (a), (c) is sectional drawing of the BB 'part shown to (b). (D) is sectional drawing of CC 'part shown to (b), (e) is sectional drawing of DD' part shown to (b). ATカット水晶基板と結晶軸との関係を説明する斜視図。The perspective view explaining the relationship between an AT cut crystal substrate and a crystal axis. 第1実施形態に係る基板の部分拡大平面図。The partial enlarged plan view of the board | substrate which concerns on 1st Embodiment. 第2実施形態に係る素子基板を示す、(a)は1個の個片部を拡大した平面図、(b)は(a)に示すE−E´部の断面図、(c)は(a)に示すF−F´部の断面図。The element substrate which concerns on 2nd Embodiment is shown, (a) is the top view which expanded the one piece part, (b) is sectional drawing of the EE 'part shown to (a), (c) is ( Sectional drawing of the FF 'part shown to a). 第2実施形態に係る素子片の電極の構成を説明する拡大断面図。The expanded sectional view explaining the structure of the electrode of the element piece which concerns on 2nd Embodiment. 第2実施形態に係る素子基板から個片化された振動素子を示す平面図。The top view which shows the vibration element separated from the element substrate which concerns on 2nd Embodiment. 第3実施形態に係る振動子を示す、(a)は平面図、(b)は(a)に示すG−G´部の断面図。The vibrator which concerns on 3rd Embodiment is shown, (a) is a top view, (b) is sectional drawing of the GG 'part shown to (a). 第4実施形態に係る発振器を示す、(a)は平面図、(b)は(a)に示すH−H´部の断面図。The oscillator which concerns on 4th Embodiment is shown, (a) is a top view, (b) is sectional drawing of the HH 'part shown to (a). 第5実施形態に係る電子機器の模式図。The schematic diagram of the electronic device which concerns on 5th Embodiment.

以下、図面を参照して、本発明に係る実施形態を説明する。   Embodiments according to the present invention will be described below with reference to the drawings.

(第1実施形態)
図1は第1実施形態に係る基板を示す、(a)は平面図、(b)は(a)に示すA部の拡大平面図、(c)は(b)に示すB−B´部の断面図、(d)は(b)に示すC−C´部の断面図、(e)は(b)に示すD−D´部の断面図である。図1(a)に示すように、基板10には、複数形成された個片1と、個片1を基板10に接続、保持する保持部2と、が形成されている。本実施形態に係る基板10は、圧電材料である水晶から形成される基板10(以降、水晶基板10という)であり、個片1は素子片として形成される(個片1を、以降、素子片1という)。
(First embodiment)
1A and 1B show a substrate according to a first embodiment, FIG. 1A is a plan view, FIG. 1B is an enlarged plan view of an A portion shown in FIG. 1A, and FIG. 1C is a BB ′ portion shown in FIG. (D) is sectional drawing of CC 'part shown to (b), (e) is sectional drawing of DD' part shown to (b). As shown in FIG. 1A, a plurality of pieces 1 and a holding portion 2 that connects and holds the pieces 1 to the substrate 10 are formed on the substrate 10. The substrate 10 according to the present embodiment is a substrate 10 (hereinafter referred to as a quartz substrate 10) formed from quartz that is a piezoelectric material, and the piece 1 is formed as an element piece (the piece 1 is referred to as an element hereinafter). Called piece 1).

水晶基板10は、図2に示すように、三方晶系の圧電材料に属する水晶を用いて形成され、互いに直交する結晶軸X,Y,Zを有する。X軸は電気軸、Y軸は機械軸、Z軸は光学軸と、それぞれ呼称され、XZ面をX軸の回りに所定の角度θだけ回転させた平面に沿って、切り出された平板が水晶基板10として用いられる。例えば、ATカット水晶基板の場合、角度θは35.25°(35°15′)である。ここで、Y軸とZ軸とをX軸の回りに角度θ回転させ、Y´軸およびZ´軸とすると、ATカット水晶基板は、直交する結晶軸X,Y´,Z´を有する。従ってATカット水晶基板は、厚み方向がY´軸であり、Y´軸に直交するX軸とZ´軸を含む面が主面であり、主面に厚み滑り振動が主振動として励振される。このように形成されるATカット水晶基板から水晶基板10が形成される。なお、本実施形態に係る水晶基板10は、図2に示す角度θが35.25°のATカットに限定されず、例えば、厚み滑り振動を励振するBTカットなどの圧電基板であってもよい。   As shown in FIG. 2, the quartz substrate 10 is formed using a quartz crystal belonging to a trigonal piezoelectric material, and has crystal axes X, Y, and Z orthogonal to each other. The X-axis is called the electrical axis, the Y-axis is called the mechanical axis, and the Z-axis is called the optical axis, and the cut plate is a quartz crystal along a plane that rotates the XZ plane about the X axis by a predetermined angle θ. Used as the substrate 10. For example, in the case of an AT-cut quartz substrate, the angle θ is 35.25 ° (35 ° 15 ′). Here, when the Y-axis and the Z-axis are rotated by an angle θ around the X-axis to make the Y′-axis and the Z′-axis, the AT-cut quartz substrate has crystal axes X, Y ′, and Z ′ that are orthogonal to each other. Accordingly, the AT-cut quartz substrate has a Y ′ axis in the thickness direction, a surface including the X axis and the Z ′ axis orthogonal to the Y ′ axis is a main surface, and thickness shear vibration is excited as a main vibration on the main surface. . The quartz crystal substrate 10 is formed from the AT cut quartz crystal substrate thus formed. Note that the quartz substrate 10 according to the present embodiment is not limited to the AT cut having an angle θ of 35.25 ° illustrated in FIG. 2, and may be a piezoelectric substrate such as a BT cut that excites thickness shear vibration, for example. .

水晶基板10に形成された素子片1は、図1(b)〜(e)に示すように、基板10の一方の主面側に凹部1aが形成されて薄肉とした矩形状の振動部1bと、振動部1bの3辺には振動部1bを支持する支持部1cが水晶基板10の厚さで形成されている。保持部2に対向する支持部1cからは一対の連結部3a,3bが延設され、保持部2と繋がっている。この連結部3a,3bによって素子片1と保持部2とは一体に形成され、図1(a)に示すように、素子片1を複数集合させた水晶基板10が形成される。   As shown in FIGS. 1B to 1E, the element piece 1 formed on the quartz substrate 10 is a rectangular vibrating portion 1b that is thinned by forming a recess 1a on one main surface side of the substrate 10. Then, support portions 1c that support the vibrating portion 1b are formed on the three sides of the vibrating portion 1b with the thickness of the quartz substrate 10. A pair of connecting portions 3 a and 3 b are extended from the support portion 1 c facing the holding portion 2 and connected to the holding portion 2. The element piece 1 and the holding part 2 are integrally formed by the connecting portions 3a and 3b, and as shown in FIG. 1A, a crystal substrate 10 in which a plurality of element pieces 1 are assembled is formed.

連結部3a,3bの詳細について、図3に示す部分拡大図により説明する。なお、連結部3aと連結部3bとは同じ構成のため、連結部3aによって説明する。連結部3aは素子片1と保持部2との間に延設されている。そして、素子片1と連結部3aとの接続部1fと、保持部2と連結部3aとの接続部2aと、の間に切り欠き部3cが形成されている。言い換えると、切り欠き部3cによってくびれ部3dが形成される。連結部3aに細く形成されるくびれ部3dが、素子片1を保持部2から折り取る場合に、連結部3aにおいては強度の弱い部位となり、選択的に破断される。連結部3bにおいても接続部1gと接続部2bとの間に形成されるくびれ部3eが、素子片1の折り取りの場合の破断部となる。   Details of the connecting portions 3a and 3b will be described with reference to a partially enlarged view shown in FIG. In addition, since the connection part 3a and the connection part 3b are the same structures, it demonstrates with the connection part 3a. The connecting portion 3 a extends between the element piece 1 and the holding portion 2. And the notch part 3c is formed between the connection part 1f of the element piece 1 and the connection part 3a, and the connection part 2a of the holding | maintenance part 2 and the connection part 3a. In other words, the constricted portion 3d is formed by the cutout portion 3c. When the constricted part 3d formed thinly in the connecting part 3a is folded from the holding part 2, the constricted part 3d becomes a weak part in the connecting part 3a and is selectively broken. Also in the connecting portion 3b, the constricted portion 3e formed between the connecting portion 1g and the connecting portion 2b serves as a broken portion when the element piece 1 is broken.

また、素子片1は、連結部3aと連結部3bとの間に連結部3a,3bの延設方向に保持部2に向かって凸部1dが形成されている。凸部1dは、凸部1dの延設端部1eが、くびれ部3d,3eに対して、保持部2側となるように形成されている。すなわち、素子片1と連結部3aとの接続部1fから延設端部1eまでの距離M、接続部1fからくびれ部3dの保持側までの距離N、とした場合、
M>N
となるように形成される。このように連結部3aが形成されることにより、素子片1を折り取った場合に、くびれ部3dの破断部が延設端部1eより外形側に飛び出すことが防止できる。連結部3bにおいても同様に、くびれ部3eの破断部が延設端部1eより外形側に飛び出すことが防止できる。
Further, the element piece 1 has a protruding portion 1d formed between the connecting portion 3a and the connecting portion 3b in the extending direction of the connecting portions 3a and 3b toward the holding portion 2. The protruding portion 1d is formed such that the extended end portion 1e of the protruding portion 1d is on the holding portion 2 side with respect to the constricted portions 3d and 3e. That is, when the distance M from the connecting portion 1f between the element piece 1 and the connecting portion 3a to the extended end portion 1e, and the distance N from the connecting portion 1f to the holding side of the constricted portion 3d,
M> N
It is formed to become. By forming the connecting portion 3a in this manner, when the element piece 1 is broken, the fracture portion of the constricted portion 3d can be prevented from jumping out from the extended end portion 1e to the outer side. Similarly, in the connecting portion 3b, the broken portion of the constricted portion 3e can be prevented from jumping out from the extended end portion 1e to the outer shape side.

更に、延設端部1eと保持部2との間隙δは、水晶基板10の厚みをtとすると、
δ>t
を満足するように形成されている。このように形成することにより、素子片1を折り取る場合に延設端部1eと保持部2との干渉を避けることができ、折り取りを容易にすることができる。
Further, the gap δ between the extended end portion 1e and the holding portion 2 is given by assuming that the thickness of the quartz substrate 10 is t.
δ> t
It is formed to satisfy. By forming in this way, when the element piece 1 is folded, interference between the extended end portion 1e and the holding portion 2 can be avoided, and the folding can be facilitated.

(第2実施形態)
図4は、第2実施形態に係る素子基板を示す、(a)は1個の個片部を拡大した平面図、(b)は(a)に示すE−E´部の断面図、(c)は(a)に示すF−F´部の断面図である。図4(a)に示すように、素子基板10Aは、第1実施形態に係る水晶基板10に所定の電極が形成され、素子片1を振動素子片100に形成されたものである。以降、素子基板10Aは振動素子基板10Aという。なお、水晶基板10および素子片1と共通の構成には同じ符号を付し、説明は省略する。
(Second Embodiment)
FIG. 4: shows the element substrate which concerns on 2nd Embodiment, (a) is the top view which expanded the one piece part, (b) is sectional drawing of the EE 'part shown to (a), (c) is sectional drawing of the FF 'part shown to (a). As shown in FIG. 4A, the element substrate 10 </ b> A is obtained by forming predetermined electrodes on the quartz crystal substrate 10 according to the first embodiment and forming the element piece 1 on the vibration element piece 100. Hereinafter, the element substrate 10A is referred to as a vibration element substrate 10A. In addition, the same code | symbol is attached | subjected to the same structure as the quartz substrate 10 and the element piece 1, and description is abbreviate | omitted.

振動素子片100は、振動部1bの一方の主面1hと他方の主面1jに、振動部1bを励振する励振電極110a,120aが形成されている。更に、励振電極110a,120aに連続して支持部1cの一方の主面側の面1kと他方の主面側の面1mと、にリード電極110b,120bが形成されている。更に、凸部1dの一方の主面側の面1nと他方の主面側の面1pと、にリード電極110b,120bに連続して、振動素子片100が収納される図示しないパッケージに備える接続電極と接続されるパッド電極110c,120cが形成されている。   In the vibration element piece 100, excitation electrodes 110a and 120a for exciting the vibration part 1b are formed on one main surface 1h and the other main surface 1j of the vibration part 1b. Furthermore, lead electrodes 110b and 120b are formed on one main surface side surface 1k and the other main surface side surface 1m of the support portion 1c in succession to the excitation electrodes 110a and 120a. Furthermore, a connection provided for a package (not shown) in which the vibration element piece 100 is accommodated in succession to the lead electrodes 110b and 120b on the surface 1n on one main surface side and the surface 1p on the other main surface side of the convex portion 1d. Pad electrodes 110c and 120c connected to the electrodes are formed.

このように、振動素子片100は、一方の主面側に励振電極110aとリード電極110bとパッド電極110cとにより構成される第1電極110と、他方の主面側に励振電極120aとリード電極120bとパッド電極120cとにより構成される第2電極120と、を備えている。第1電極110および第2電極120は、少なくとも1層以上の導電膜を備える導電層であって、電極の構成の一例を図5に示す。図5に示すように、第1電極110の励振電極110aは、第1電極層210aと第2電極層210bの2層の電極層により形成されている。第1電極層210aは素子片1を形成する水晶との密着性に優れるNi(ニッケル)が成膜され、第1電極層210aの表層には第2電極層210bとして導電性に優れるAu(金)が積層されている。第1電極110のリード電極110bおよびパッド電極110cは、励振電極110aと共通電極層として第1電極層210aと第2電極層210bが形成され、更に第2電極層210bの表層に第3電極層210cとしてAuが積層されている。   As described above, the vibration element piece 100 includes the first electrode 110 including the excitation electrode 110a, the lead electrode 110b, and the pad electrode 110c on one main surface side, and the excitation electrode 120a and the lead electrode on the other main surface side. 2nd electrode 120 comprised by 120b and the pad electrode 120c is provided. The first electrode 110 and the second electrode 120 are conductive layers including at least one conductive film, and an example of the configuration of the electrodes is shown in FIG. As shown in FIG. 5, the excitation electrode 110a of the first electrode 110 is formed of two electrode layers, a first electrode layer 210a and a second electrode layer 210b. The first electrode layer 210a is formed of Ni (nickel) having excellent adhesion to the crystal forming the element piece 1, and Au (gold) having excellent conductivity as the second electrode layer 210b is formed on the surface layer of the first electrode layer 210a. ) Are stacked. As for the lead electrode 110b and the pad electrode 110c of the first electrode 110, the first electrode layer 210a and the second electrode layer 210b are formed as the excitation electrode 110a and the common electrode layer, and the third electrode layer is formed on the surface layer of the second electrode layer 210b. Au is laminated as 210c.

第2電極120も、第1電極110同様に、第2電極120の励振電極120aは、第1電極層220aと第2電極層220bの2層の電極層により形成されている。第1電極層220aは素子片1を形成する水晶との密着性に優れるNi(ニッケル)が成膜され、第1電極層220aの表層には第2電極層220bとして導電性に優れるAu(金)が積層されている。第2電極120のリード電極120bおよびパッド電極120cは、励振電極120aと共通電極層として第1電極層220aと第2電極層220bが形成され、更に第2電極層220bの表層に第3電極層220cとしてAuが積層されている。このように、第1電極110および第2電極120が形成されることにより、励振電極110a,120aの層厚より厚い層厚を有するリード電極110b,120cおよびパッド電極110c,120cを有する振動素子片100が形成される。   Similarly to the first electrode 110, the excitation electrode 120a of the second electrode 120 is formed of two electrode layers of the first electrode layer 220a and the second electrode layer 220b. The first electrode layer 220a is formed of Ni (nickel) having excellent adhesion to the crystal forming the element piece 1, and Au (gold) having excellent conductivity as the second electrode layer 220b is formed on the surface layer of the first electrode layer 220a. ) Are stacked. The lead electrode 120b and the pad electrode 120c of the second electrode 120 have the first electrode layer 220a and the second electrode layer 220b formed as the excitation electrode 120a and the common electrode layer, and the third electrode layer on the surface layer of the second electrode layer 220b. Au is laminated as 220c. Thus, by forming the first electrode 110 and the second electrode 120, the vibration element piece having the lead electrodes 110b and 120c and the pad electrodes 110c and 120c having a layer thickness larger than the layer thickness of the excitation electrodes 110a and 120a. 100 is formed.

振動素子片100において、励振電極110a,120aは振動部1bの振動性能を高めるために極力薄く成膜されるが、薄膜にするに従って増加する抵抗による損失、すなわちオーミックロスを低減するために、リード電極110b,120bを第3電極層210c,220cを積層させて厚く形成させることによってオーミックロスを低減し、CI値の劣化を抑制することができる。また、励振電極110a,120aの第1電極層210a,220aおよび第2電極層210b,220bが、リード電極110b,120bの共通電極層として構成されていることにより、励振電極110a,120aとリード電極110b,120bとの電気的な接続が確実に行われ、高い信頼性を有する振動素子片100を得ることができる。   In the vibration element piece 100, the excitation electrodes 110a and 120a are formed as thin as possible in order to improve the vibration performance of the vibration part 1b, but in order to reduce the loss due to resistance that increases as the film is made thin, that is, the ohmic cross, By forming the electrodes 110b and 120b to be thick by laminating the third electrode layers 210c and 220c, the ohmic cross can be reduced and the deterioration of the CI value can be suppressed. Further, the first electrode layers 210a and 220a and the second electrode layers 210b and 220b of the excitation electrodes 110a and 120a are configured as a common electrode layer of the lead electrodes 110b and 120b, so that the excitation electrodes 110a and 120a and the lead electrodes are formed. 110b and 120b are securely connected to each other, and the vibration element piece 100 having high reliability can be obtained.

上述のように形成される、振動素子片100を有する振動素子基板10Aから、振動素子片100に外力を与え、図6に示すように、くびれ部3d,3eを破断させて個片化し、振動素子100Aを得る。この場合、破断し易いくびれ部3d,3e領域内で破断部P,Qが発生する。すなわち、図3によって説明したが、図3に示すように素子片1は、素子片1と連結部3aとの接続部1fから延設端部1eまでの距離M、接続部1fからくびれ部3dの保持側までの距離N、とした場合、
M>N
となるように形成されている。これにより、振動素子片100を折り取ることによりくびれ部3d,3eの領域に生じる破断部P,Qが、延設端部1eより外形側に飛び出すことを防止できる。
From the vibration element substrate 10A having the vibration element piece 100 formed as described above, an external force is applied to the vibration element piece 100, and the constricted portions 3d and 3e are broken into pieces as shown in FIG. Element 100A is obtained. In this case, the rupture portions P and Q are generated in the constricted portions 3d and 3e which are easily broken. That is, as described with reference to FIG. 3, as shown in FIG. 3, the element piece 1 includes the distance M from the connecting portion 1f between the element piece 1 and the connecting portion 3a to the extended end portion 1e, and the constricted portion 3d from the connecting portion 1f. If the distance N to the holding side of
M> N
It is formed to become. Thereby, the fracture | rupture parts P and Q which arise in the area | region of the constriction parts 3d and 3e by breaking off the vibration element piece 100 can prevent jumping out to the external shape side from the extended end part 1e.

(第3実施形態)
第3実施形態の電子デバイスの一実施形態として、第2実施形態に係る振動素子100Aを備える振動子を説明する。図7は、第3実施形態に係る振動子1000を示し、(a)は蓋部材を省略した平面図、(b)は(a)に示すG−G´部の断面図である。振動子1000は、図7(a),(b)に示すように、矩形の箱状に形成されたパッケージ本体300と、金属あるいはセラミックスもしくはガラスなどから形成される蓋部材400と、により形成されるパッケージ500の内部に、振動素子100Aが気密に収納される構成となっている。
(Third embodiment)
As an embodiment of the electronic device according to the third embodiment, a vibrator including the resonator element 100A according to the second embodiment will be described. 7A and 7B show a vibrator 1000 according to the third embodiment, in which FIG. 7A is a plan view in which a lid member is omitted, and FIG. 7B is a cross-sectional view taken along a line GG ′ shown in FIG. As shown in FIGS. 7A and 7B, the vibrator 1000 is formed by a package body 300 formed in a rectangular box shape and a lid member 400 formed of metal, ceramics, glass, or the like. In the package 500, the vibration element 100A is stored in an airtight manner.

パッケージ本体300は、図7(b)に示すように、第1基板310と、第2基板320と、枠状に形成された第3基板330と、を積層し気密固定し、第1基板310の外部面310aに実装端子350が複数形成され、第3基板330の上端面330aにシーリング340が形成されている。第3基板330と第2基板320とにより、振動素子100Aが収納される凹部300a(以下、キャビティ300aという)が形成される。また、第2基板320の振動素子100Aを載置する搭載面320aには、後述する振動素子100Aのパッド電極110c,120cと電気的に接続される搭載パッド370と電極端子380が形成されている。これらの搭載パッド370と電極端子380とは、パッケージ本体300の内部に形成された内部配線360によって実装端子350と電気的に接続されている。なお搭載パッド370は、振動素子100Aをキャビティ300a内に載置した場合に第1電極110のパッド電極110cに対応する領域に形成される。   As shown in FIG. 7B, the package main body 300 is formed by laminating a first substrate 310, a second substrate 320, and a third substrate 330 formed in a frame shape, and hermetically fixing the first substrate 310. A plurality of mounting terminals 350 are formed on the outer surface 310 a of the third substrate 330, and a sealing 340 is formed on the upper end surface 330 a of the third substrate 330. The third substrate 330 and the second substrate 320 form a recess 300a (hereinafter referred to as a cavity 300a) in which the vibration element 100A is accommodated. Further, on the mounting surface 320a on which the vibration element 100A of the second substrate 320 is placed, a mounting pad 370 and an electrode terminal 380 that are electrically connected to pad electrodes 110c and 120c of the vibration element 100A described later are formed. . The mounting pad 370 and the electrode terminal 380 are electrically connected to the mounting terminal 350 by an internal wiring 360 formed inside the package body 300. The mounting pad 370 is formed in a region corresponding to the pad electrode 110c of the first electrode 110 when the vibration element 100A is placed in the cavity 300a.

パッケージ本体300のキャビティ300a内に、振動素子100Aは第1電極110が第2基板320の搭載面320aと対向するように載置される。そして、振動素子100Aの第1電極110のパッド電極110cと、第2基板320の搭載面320aに形成された搭載パッド370と、の間に導電性接着剤600を塗布、硬化させることによりパッケージ本体300に振動素子100Aが固定され、振動素子100Aの第2電極120のパッド電極120cと、第2基板320の搭載面320aに形成された電極端子380と、はボンディングワイヤーBWによって導通接続されている。このようにキャビティ300aに振動素子100Aを載置固定し、蓋部材400を第3基板330に備えるシーリング340によって気密固定することにより、振動子1000が得られる。   In the cavity 300 a of the package body 300, the vibration element 100 </ b> A is placed so that the first electrode 110 faces the mounting surface 320 a of the second substrate 320. Then, a conductive adhesive 600 is applied and cured between the pad electrode 110c of the first electrode 110 of the vibration element 100A and the mounting pad 370 formed on the mounting surface 320a of the second substrate 320, thereby curing the package body. The vibration element 100A is fixed to 300, and the pad electrode 120c of the second electrode 120 of the vibration element 100A and the electrode terminal 380 formed on the mounting surface 320a of the second substrate 320 are electrically connected by the bonding wire BW. . In this way, the resonator element 100A is placed and fixed in the cavity 300a, and the lid member 400 is hermetically fixed by the sealing 340 provided on the third substrate 330, whereby the vibrator 1000 is obtained.

第3実施形態に係る振動子1000では、振動素子100Aが支持固定される部位が第1電極110のパッド電極110c部の1点であるが、パッド電極110cが形成されている部位と振動部1bとの間に貫通溝1q(図1参照)を形成することによって、導電性接着剤600に起因して水晶基板10に生じる応力を緩和することができるため、周波数再現性、周波数温度特性、CI温度特性、および周波数エージング特性に優れた振動子1000を得ることができる。更に、凸部1dに第1電極110のパッド電極110cを形成することができるため、パッド電極110cの面積を大きくすることができることで、導電性接着剤600の塗布面積も大きくすることができる。従って、第1電極110のパッド電極110cにおける1箇所での振動素子100Aの固定であっても、振動素子100Aの固定力を確保することができる振動子を得ることができる。   In the vibrator 1000 according to the third embodiment, the part where the vibration element 100A is supported and fixed is one point of the pad electrode 110c part of the first electrode 110, but the part where the pad electrode 110c is formed and the vibration part 1b. By forming through-grooves 1q (see FIG. 1) between them, stress generated in the quartz substrate 10 due to the conductive adhesive 600 can be relieved, so that frequency reproducibility, frequency temperature characteristics, CI The vibrator 1000 having excellent temperature characteristics and frequency aging characteristics can be obtained. Furthermore, since the pad electrode 110c of the first electrode 110 can be formed on the convex portion 1d, the area of the pad electrode 110c can be increased, and the application area of the conductive adhesive 600 can also be increased. Therefore, even if the vibration element 100A is fixed at one place on the pad electrode 110c of the first electrode 110, a vibrator that can secure the fixing force of the vibration element 100A can be obtained.

また、凸部1dは第1実施形態に係る水晶基板10の製造段階で、エッチングなどの手法により正確な寸法で形成することができる。すなわち、凸部1dの延設端部1eを含む振動素子100Aの外形寸法であるL寸法も正確に成形することができる。これにより、第3基板330の内壁330bと振動素子100Aとの隙間αを最小にすることができ、小型の振動子1000を得ることができる。   Further, the convex portion 1d can be formed with an accurate dimension by a technique such as etching in the manufacturing stage of the quartz crystal substrate 10 according to the first embodiment. That is, the L dimension, which is the outer dimension of the vibration element 100A including the extended end 1e of the protrusion 1d, can also be accurately formed. As a result, the gap α between the inner wall 330b of the third substrate 330 and the vibration element 100A can be minimized, and a small vibrator 1000 can be obtained.

(第4実施形態)
第4実施形態として、第2実施形態に係る振動素子100Aを備える発振器を説明する。図8は、第3実施形態に係る発振器2000を示し、(a)は蓋部材を省略した平面図、(b)は(a)に示すH−H´部の断面図である。発振器2000は、図8(a),(b)に示すように、パッケージ本体2100と蓋部材2200とにより形成されるパッケージ2300の内部に、振動素子100Aと、振動素子100Aを励振させる発振回路を含む半導体装置2410と、電圧により容量が変化する可変容量素子、もしくは温度により抵抗値が変化するサーミスター、インダクターなどの少なくともどちらかである電子部品2420と、を備えている。
(Fourth embodiment)
As the fourth embodiment, an oscillator including the resonator element 100A according to the second embodiment will be described. 8A and 8B show an oscillator 2000 according to the third embodiment, in which FIG. 8A is a plan view in which a lid member is omitted, and FIG. 8B is a cross-sectional view taken along the line HH ′ shown in FIG. As shown in FIGS. 8A and 8B, the oscillator 2000 includes an oscillation element 100A and an oscillation circuit that excites the oscillation element 100A inside a package 2300 formed by the package body 2100 and the lid member 2200. And a semiconductor device 2410 including a variable capacitance element whose capacitance changes with voltage, or an electronic component 2420 which is at least one of a thermistor and an inductor whose resistance value changes with temperature.

図8(b)に示すように、パッケージ本体2100は、第1基板2110と、第2基板2120と、第3基板2130と、を積層して形成されている。実装端子2150は第1基板2110の外部面2110bに複数形成されている。第2基板2120と第3基板2130とは、中央部が除去された枠状に形成され、第1基板2110と、第2基板2120と、第3基板2130と、を積層することにより、振動素子100A、半導体装置2410、電子部品2420などを収納する凹部2100a(以下、キャビティ2100aという)が形成される。また、第2基板2120の振動素子100Aを載置する搭載面2120aには、振動素子100Aのパッド電極110c,120cと電気的に接続される搭載パッド2170と電極端子2180が形成されている。これらの搭載パッド2170と電極端子2180とは、パッケージ本体2100の内部に形成された内部配線によって半導体装置2410もしくは電子部品2420と電気的に接続されている。なお搭載パッド2170は、振動素子100Aをキャビティ2100a内に載置した場合に第1電極110のパッド電極110cに対応する領域に形成される。   As shown in FIG. 8B, the package body 2100 is formed by stacking a first substrate 2110, a second substrate 2120, and a third substrate 2130. A plurality of mounting terminals 2150 are formed on the outer surface 2110 b of the first substrate 2110. The second substrate 2120 and the third substrate 2130 are formed in a frame shape with the central portion removed, and the first substrate 2110, the second substrate 2120, and the third substrate 2130 are stacked to form a vibration element. A recess 2100a (hereinafter referred to as a cavity 2100a) for accommodating 100A, the semiconductor device 2410, the electronic component 2420, and the like is formed. Also, on the mounting surface 2120a on which the vibration element 100A of the second substrate 2120 is placed, a mounting pad 2170 and an electrode terminal 2180 that are electrically connected to the pad electrodes 110c and 120c of the vibration element 100A are formed. These mounting pads 2170 and electrode terminals 2180 are electrically connected to the semiconductor device 2410 or the electronic component 2420 through internal wiring formed inside the package body 2100. The mounting pad 2170 is formed in a region corresponding to the pad electrode 110c of the first electrode 110 when the vibration element 100A is placed in the cavity 2100a.

振動素子100Aの第2基板2120への固定は、上述した第3実施形態と同様であるため、説明は省略する。半導体装置2410は、第1基板2110の電子部品搭載面2110aの所定位置に接着剤などにより固定し、半導体装置2410の端子と、電子部品搭載面2110aに設けられた電極端子2430とボンディングワイヤーBWによって電気的に接続する。また、電子部品2420は、電子部品搭載面2110aの所定の固定位置に形成された金属バンプなどにより接続固定される。電極端子2430は第1基板2110の内部配線2160によって第1基板2110の外部面2110bに形成される複数の実装端子2150に接続されている。   Since the vibration element 100A is fixed to the second substrate 2120 in the same manner as in the third embodiment described above, description thereof is omitted. The semiconductor device 2410 is fixed to a predetermined position of the electronic component mounting surface 2110a of the first substrate 2110 with an adhesive or the like, and is connected to the terminals of the semiconductor device 2410, electrode terminals 2430 provided on the electronic component mounting surface 2110a, and bonding wires BW. Connect electrically. Further, the electronic component 2420 is connected and fixed by a metal bump or the like formed at a predetermined fixing position on the electronic component mounting surface 2110a. The electrode terminal 2430 is connected to a plurality of mounting terminals 2150 formed on the outer surface 2110 b of the first substrate 2110 by the internal wiring 2160 of the first substrate 2110.

キャビティ2100aに振動素子100A、半導体装置2410および電子部品2420を接続固定し、パッケージ本体2100を蓋部材2200により気密封止することにより発振器2000を得る。   The resonator element 100A, the semiconductor device 2410, and the electronic component 2420 are connected and fixed to the cavity 2100a, and the package body 2100 is hermetically sealed by the lid member 2200, whereby the oscillator 2000 is obtained.

第4実施形態として上述の通り、パッケージ2300の内部に振動素子100Aと、発振回路を含む半導体装置2410と、電子部品2420と、を備える発振器2000を説明したが、これに限定されない。例えば、COB(Chip On Board)技術を応用し、電子機器のプリント基板等に振動素子100A、および発振回路を含む半導体装置2410と、電子部品2420と、を剥き出しの状態で実装し、その後、チップをモールドしたり、キャップを被せたりして発振器を形成してもよい。または、プリント基板に振動素子100Aを一方の電極で接合材を介して一点支持し電気的にも接続し、他方の電極をワイヤー接続しても良い。   As described above, the oscillator 2000 including the vibration element 100A, the semiconductor device 2410 including the oscillation circuit, and the electronic component 2420 in the package 2300 has been described as the fourth embodiment. However, the present invention is not limited to this. For example, by applying COB (Chip On Board) technology, a vibration device 100A and a semiconductor device 2410 including an oscillation circuit and an electronic component 2420 are mounted on a printed circuit board of an electronic device in an exposed state, and then a chip The oscillator may be formed by molding or covering with a cap. Alternatively, the vibration element 100 </ b> A may be supported at one point on one side of the printed circuit board via a bonding material and electrically connected to the printed board, and the other electrode may be wire-connected.

(第5実施形態)
図9は、電子機器の一例を示す概略構成図である。電子機器3000は、第3実施形態に係る振動子1000を備えている。電子機器3000としては、伝送機器などが挙げられ、電子機器3000において振動子1000は、基準信号源、あるいは電圧可変型発振器(VCXO)などとして用いられ、小型で特性の良好な電子機器3000を得ることができる。
(Fifth embodiment)
FIG. 9 is a schematic configuration diagram illustrating an example of an electronic device. The electronic device 3000 includes the vibrator 1000 according to the third embodiment. Examples of the electronic device 3000 include a transmission device. In the electronic device 3000, the vibrator 1000 is used as a reference signal source, a voltage variable oscillator (VCXO), or the like to obtain a small electronic device 3000 having excellent characteristics. be able to.

1…個片(素子片)、2…保持部、10…基板(水晶基板)。   DESCRIPTION OF SYMBOLS 1 ... Individual piece (element piece), 2 ... Holding part, 10 ... Substrate (quartz substrate).

Claims (8)

複数の個片と、
前記個片から延設されている一対の連結部と、
前記連結部の延設端部が接続されている保持部と、を含み、
前記連結部は、前記個片が接続されている個片接続部と前記保持部が接続されている保持接続部と、の間にくびれ部が設けられ、
前記個片は、前記一対の連結部の間の前記個片の前記個片接続部側端部より、前記連結部の延設方向に延出されている凸部を含み、
前記くびれ部が、前記凸部の延出方向端部よりも前記個片接続部側に設けられている、
ことを特徴とする基板。
Multiple pieces,
A pair of connecting portions extending from the piece;
And a holding part to which the extended end of the connecting part is connected,
The connecting portion is provided with a constricted portion between the piece connecting portion to which the piece is connected and the holding connecting portion to which the holding portion is connected,
The piece includes a convex portion extending in an extending direction of the connecting portion from an end portion of the piece connecting portion side of the piece between the pair of connecting portions,
The constricted portion is provided closer to the piece connecting portion than the end portion in the extending direction of the convex portion,
A substrate characterized by that.
請求項1において、
前記凸部の前記延出方向端部と前記保持部との隙間をδとし、
前記基板の板厚をtとし、
前記δと前記tとの関係が、
δ>t
を満足している、
ことを特徴とする基板。
In claim 1,
A gap between the end portion in the extending direction of the convex portion and the holding portion is δ,
The thickness of the substrate is t,
The relationship between δ and t is
δ> t
Are satisfied,
A substrate characterized by that.
請求項1または2において、
前記基板が水晶であり、
前記水晶の結晶軸である、電気軸としてのX軸と、機械軸としてのY軸と、光学軸としてのZ軸と、からなる直交座標系の前記X軸を中心として、前記Z軸を前記Y軸の−Y方向へ傾けた軸をZ´軸とし、前記Y軸を前記Z軸の+Z方向へ傾けた軸をY´軸とした場合、
前記基板の主面は前記X軸と前記Z´軸に平行であり、
前記Y´軸に平行な方向を厚みとし、
前記連結部が前記X軸に沿って延在されている、
ことを特徴とする基板。
In claim 1 or 2,
The substrate is quartz;
Centering on the X axis of an orthogonal coordinate system consisting of an X axis as an electrical axis, a Y axis as a mechanical axis, and a Z axis as an optical axis, which is a crystal axis of the quartz crystal, When the axis tilted in the −Y direction of the Y axis is the Z ′ axis and the axis tilted in the + Z direction of the Z axis is the Y ′ axis,
The main surface of the substrate is parallel to the X axis and the Z ′ axis,
The direction parallel to the Y ′ axis is the thickness,
The connecting portion extends along the X axis;
A substrate characterized by that.
請求項3において、
前記水晶がATカット水晶であることを特徴とする基板。
In claim 3,
A substrate characterized in that the crystal is an AT cut crystal.
請求項1から4のいずれか一項において、
前記個片に電極が設けられている、
ことを特徴とする基板。
In any one of Claims 1-4,
An electrode is provided on the piece,
A substrate characterized by that.
請求項5に記載の基板から、前記連結部を破断して前記個片を分離して得られる素子と、
前記素子が収容されるパッケージと、を備えていることを特徴とする電子デバイス 。
An element obtained by breaking the connecting portion and separating the individual pieces from the substrate according to claim 5;
An electronic device comprising: a package in which the element is accommodated.
請求項5に記載の基板から、前記連結部を破断して前記個片を分離して得られる素子と、
前記素子を駆動する発振回路と、
を備えていることを特徴とする発振器。
An element obtained by breaking the connecting portion and separating the individual pieces from the substrate according to claim 5;
An oscillation circuit for driving the element;
An oscillator comprising:
請求項6に記載の電子デバイスを備えていることを特徴とする電子機器。   An electronic apparatus comprising the electronic device according to claim 6.
JP2012017835A 2012-01-31 2012-01-31 Substrate, element substrate, electronic device, oscillator and electronic apparatus Withdrawn JP2013157844A (en)

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