JP2013153178A - Semiconductor device - Google Patents

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Publication number
JP2013153178A
JP2013153178A JP2013040529A JP2013040529A JP2013153178A JP 2013153178 A JP2013153178 A JP 2013153178A JP 2013040529 A JP2013040529 A JP 2013040529A JP 2013040529 A JP2013040529 A JP 2013040529A JP 2013153178 A JP2013153178 A JP 2013153178A
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JP
Japan
Prior art keywords
layer
semiconductor
electrode layer
semiconductor layer
drain electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2013040529A
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Japanese (ja)
Inventor
Yasuyuki Arai
康行 荒井
Tatsuya Honda
達也 本田
Kengo Akimoto
健吾 秋元
Ikuko Kawamata
郁子 川俣
Original Assignee
Semiconductor Energy Lab Co Ltd
株式会社半導体エネルギー研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Lab Co Ltd, 株式会社半導体エネルギー研究所 filed Critical Semiconductor Energy Lab Co Ltd
Priority to JP2013040529A priority Critical patent/JP2013153178A/en
Publication of JP2013153178A publication Critical patent/JP2013153178A/en
Withdrawn legal-status Critical Current

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