JP2013153045A - Method for manufacturing aggregate substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing an aggregate substrate capable of reducing problems such as that an aggregate substrate which is in production is caught in a transport conveyor.SOLUTION: The method for manufacturing an aggregate substrate comprises the steps of: preparing an insulating layer with a first copper foil to which a first copper foil of 30 μm or above in thickness is attached under a first insulating layer 1 of 60 μm or below in thickness; forming a first wiring conductor 2 on the first insulating layer 1; laminating an insulating layer with a second copper foil in which a second copper foil of 30 μm or above in thickness is attached to a second insulating layer 3 of 60 μm or below in thickness on the insulating layer with the first copper foil; forming at least one of the first copper foil and the second copper foil in a frame-like shape and exposing a central part of at least one of the first insulating layer 1 and the second insulating layer 3; forming a via hole 7 reaching the first wiring conductor 2 on at least one of the first insulating layer 1 and the second insulating layer 3; and forming a second wiring conductor 5 on a surface of at least one of the first insulating layer 1 and the second insulating layer 3 including the via hole 7.

Description

  The present invention relates to a method for manufacturing a thin aggregate substrate.

  Electronic devices such as mobile phones and portable music players incorporate electronic components with semiconductor elements mounted on a wiring board. Recently, these electronic devices have become thinner and more functional. In the process, wiring boards used for electronic components are also required to be thin and highly functional.

  By the way, such a wiring board is formed after forming a rectangular collective board composed of a plurality of product areas each of which becomes an individual wiring board and a disposal margin area provided so as to surround these product areas. A plurality of wiring boards may be manufactured at the same time by dividing each product region into pieces.

  When manufacturing such an aggregate substrate, for example, first, an insulating layer with a copper foil in which a copper foil with a thickness of about 3 to 12 μm is stretched on both sides of an insulating layer with a side size of about 500 to 600 mm is started. Material. The insulating layer with copper foil is provided with a large number of product areas to be individual wiring boards at the center thereof, and a frame-shaped discard margin area is provided at the outer periphery thereof. And an aggregate substrate is manufactured by giving an etching process, a drill process, a plating process, a lamination process, etc. to this insulating layer with a copper foil. For example, conveyors in which a plurality of rotating cylindrical rolls are disposed at predetermined intervals in a state where the rotating cylindrical roll crosses the conveyance direction are frequently used in and between the processing apparatuses used for manufacturing such an aggregate substrate. ing. Then, the collective substrate being processed is placed on the transfer conveyor in a state where both main surfaces are in the horizontal direction, and is transferred through the processing apparatus or between the processing apparatuses.

  However, when the thickness of the insulating layer with copper foil used for the collective substrate is reduced in order to meet the demand for thinning the wiring board as described above, the rigidity of the insulating layer with copper foil is reduced, so that the processing is performed. Warpage tends to occur in the collective substrate inside. For this reason, when the collective substrate being processed is conveyed by the conveyer, there is a case where the collective substrate being processed is caught by a roll of the conveyer or is entangled. In particular, when the thickness of the insulating layer in the insulating layer with copper foil is 60 μm or less, there is a problem that warpage generated in the assembled substrate being processed becomes large, and problems such as catching and entrainment during transportation become remarkable. .

JP-A-2-22896

  The present invention suppresses warpage occurring in a collective substrate being processed when a collective substrate is manufactured using an insulating layer with a thin copper foil having a thickness of 60 μm or less as a starting material. It is an object of the present invention to provide a method of manufacturing a collective substrate that can reduce problems such as a substrate being caught or rolled by a roll of a conveyor for conveyance.

  In the method for manufacturing a collective substrate of the present invention, a first insulating layer with a copper foil is prepared, in which a first copper foil having a thickness of 30 μm or more is attached to the lower surface of a first insulating layer having a thickness of 60 μm or less. The thickness of the first step, the second step of forming the first wiring conductor on the upper surface of the first insulating layer, and the upper surface of the first insulating layer with copper foil on which the first wiring conductor is formed. A third step of laminating an insulating layer with a second copper foil in which a second copper foil having a thickness of 30 μm or more is stuck on the upper surface of the second insulating layer having a thickness of 60 μm or less, and first and second copper A fourth step in which at least one of the foil is etched away leaving its outer periphery in a frame shape to expose at least one central portion of the first and second insulating layers; and the exposed first and second insulations A fifth step of forming a via hole reaching the first wiring conductor in at least one of the layers, and the inside of the via hole. A second wiring conductor on at least one surface of the first and second insulating layer is characterized in that performing a sixth step of forming a semi-additive method.

  According to the method for manufacturing a collective substrate of the present invention, the first insulating layer with copper foil serving as a starting material has a thickness of 60 μm or less as the first insulating layer constituting the first insulating layer. Since the thickness of the first copper foil stretched on the lower surface of the copper foil is as thick as 30 μm or more, sufficient rigidity can be maintained by the first copper foil. In addition, a second copper foil having a thickness of 30 μm or more is attached to the upper surface of the second insulating layer having a thickness of 60 μm or less on the upper surface of the first insulating layer with copper foil on which the first wiring conductor is formed. After laminating the insulating layer with the second copper foil, when removing at least one of the first and second copper foils by etching, the outer peripheral portion is left in a frame shape. Since the laminate of the insulating layers with the first and second copper foils can be given rigidity by the second copper foil, it is possible to suppress warping. As a result, it is possible to provide a method for manufacturing a collective substrate that can reduce problems such as the collective substrate being processed being caught or rolled on the roll of the conveyer during transport.

FIG. 1 is a schematic cross-sectional view for explaining an example of an aggregate substrate manufactured by the manufacturing method of the present invention. 2A to 2F are schematic cross-sectional views for each step for explaining an example of an embodiment in the production method of the present invention. 3G to 3K are schematic cross-sectional views for each step for explaining an example of the embodiment in the production method of the present invention. 4A to 4D are schematic cross-sectional views for each process for explaining an example of another embodiment in the production method of the present invention. FIG.5 (e)-(h) is a schematic sectional drawing for every process for demonstrating an example of another embodiment in the manufacturing method of this invention. 6A to 6E are schematic cross-sectional views for each step for explaining an example of still another embodiment in the production method of the present invention. FIGS. 7F to 7J are schematic cross-sectional views for each process for explaining an example of still another embodiment in the production method of the present invention. 8 (k) to 8 (m) are schematic cross-sectional views for each process for explaining an example of still another embodiment in the production method of the present invention.

  Next, an example of an embodiment of the present invention will be described with reference to FIGS. 1 to 8 show only one product region X for the sake of simplicity, actually, several tens to several hundreds of product regions X are arranged.

  FIG. 1 shows an example of a collective substrate 10 manufactured by the manufacturing method of the present invention. As shown in FIG. 1, a collective substrate 10 manufactured by the manufacturing method of the present invention includes a first insulating layer 1 and a second insulating layer having a thickness of 60 μm or less reinforced by a copper foil 4 having a thickness of 30 μm or more. 3 and a product region X serving as an individual wiring board at the center thereof, and a frame-shaped discard margin region Y at the outer peripheral portion thereof. In the product region X, the first wiring conductor 2 is disposed between the first insulating layer 1 and the second insulating layer 3, and the lower surface of the first insulating layer 1 and the second insulating layer 1 are provided. A second wiring conductor 5 is disposed on the upper surface of the layer 3. These second wiring conductors 5 are electrically connected to the first wiring conductor 2 through via holes 7 formed in the first insulating layer 1 and the second insulating layer 3. Further thereon, a solder resist layer 6 is deposited. In the disposal margin region Y, a frame-like copper foil 4 is disposed on the lower surface of the first insulating layer 1 and the upper surface of the second insulating layer 3. The frame-shaped copper foil 4 acts as a reinforcing member that imparts rigidity so that the collective substrate 10 is not warped during manufacture of the collective substrate 10. By having such a frame-like copper foil 4 having a thickness of 30 μm or more, the aggregate substrate 10 being processed can be transported without being caught on or rolled up on the roll of the transport conveyor.

  Next, an example of an embodiment in the production method of the present invention will be described based on FIGS. 2 (a) to (f) and FIGS. 3 (g) to (k). First, as shown in FIG. 2A, the first copper foil 11 is attached to the lower surface of the first insulating layer 1, and the first copper foil is attached to the upper surface of the thin film copper foil 12. An insulating layer 13 is prepared. The first insulating layer 1 is made of an electrically insulating material in which a glass cloth is impregnated with a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin. The thickness of the first insulating layer 1 is 60 μm or less. Such an insulating layer 13 with a first copper foil is formed by attaching the first copper foil 11 to the lower surface of a prepreg obtained by impregnating a glass cloth with a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin. It can be obtained by thermosetting a thin film copper foil 12 attached to the upper surface. The thickness of the 1st copper foil 11 is about 30-80 micrometers, and the thickness of the thin film copper foil 12 is about 3-12 micrometers. The first insulating layer 13 with copper foil has a thickness of 30 to 80 [mu] m thick copper foil 11 attached to its lower surface, so that the thickness of the first insulating layer 1 is 60 [mu] m or less. The thick first copper foil 11 provides sufficient rigidity. Therefore, even if this 1st insulating layer 13 with copper foil is conveyed on a conveyance conveyor, it can be made to convey favorably, without being caught on the roll of a conveyance conveyor or being caught. In addition, when the thickness of the 1st copper foil 11 is less than 30 micrometers, the rigidity of the insulating layer 13 with a 1st copper foil is insufficient, and it becomes easy to generate | occur | produce a curvature in the insulating layer 13 with a 1st copper foil, and conveyance If the 1st insulating layer 13 with copper foil is conveyed on a conveyor, the danger that it will be caught in the roll of a conveyance conveyor or it will be wound up becomes high. Therefore, the thickness of the first copper foil 11 is specified to be 30 μm or more. Further, when the thickness of the first copper foil 11 exceeds 80 μm, as will be described later, when the first copper foil 11 is partially etched away, it takes time for the etching. Manufacturing efficiency is poor. Therefore, it is preferable that the thickness of the 1st copper foil 11 is the range of 30-80 micrometers.

  Next, as shown in FIG. 2B, a plating resist layer 14 is deposited on the upper and lower surfaces of the first insulating layer 13 with copper foil. An opening for exposing the thin film copper foil 12 at the position where the first wiring conductor 2 is to be formed is formed in the plating resist layer 14 on the upper surface side. The plating resist layer 14 on the lower surface side is formed so as to cover the entire lower surface of the first copper foil 11. When forming the plating resist 14, for example, a resist film containing a photosensitive resin such as an acrylic resin is attached to the upper and lower surfaces of the first insulating layer 13 with copper foil, and a well-known photolithography technique is used. And by exposing and developing so as to have a predetermined opening pattern. When developing the resist film, the developer is applied from above and below while the first copper foil insulating layer 13 with the exposed resist film stuck thereon is transported on a transport conveyor having a transport roll. A method of removing the uncured portion of the resist film by spraying is employed. At this time, since the first copper foil 11 having a thickness of 30 to 80 μm is stuck on the lower surface of the first insulating layer 13 with copper foil being processed, the thickness of the first insulating layer 1 is 60 μm. In spite of the following thinness, sufficient rigidity is provided by the thick first copper foil 11. Therefore, even if the insulating layer 13 with the first copper foil being processed is transported on the transport conveyor, it can be transported satisfactorily without being caught or caught in the roll of the transport conveyor.

  Next, as shown in FIG. 2C, a first plated metal layer 2P is deposited on the surface of the thin film copper foil 12 exposed from the plating resist 14 by an electrolytic plating method. In addition, as the 1st metal plating layer 2P, electrolytic copper plating is used suitably. The thickness of the first plated metal layer 2P is about 5 to 35 mm.

  Next, as shown in FIG. 2D, the plating resist 14 is removed and the thin film copper foil 12 exposed from the first plating metal layer 2P is removed by etching. As a result, the first wiring conductor 2 composed of the first plated metal layer 2 </ b> P with the thin film copper foil 12 as a base is formed on the upper surface of the first insulating layer 1. The removal of the plating resist layer 14 is performed by removing an alkaline resist stripping solution from above and below while the first insulating layer 13 with copper foil to which the plating resist layer 14 is adhered is transported on a transport conveyor having a transport roll. This is done by spraying. When the thin film copper foil 12 is removed by etching, an etching solution is sprayed from above and below while the first copper foil insulating layer 13 from which the plating resist 14 has been removed is transported on a transport conveyor having a transport roll. Then, a method of etching away the thin film copper foil 12 exposed from the first plated metal layer 2P is employed. At this time, since the first copper foil 11 having a thickness of 30 to 80 μm is stuck on the lower surface of the first insulating layer 13 with copper foil being processed, the thickness of the first insulating layer 1 is 60 μm. In spite of the following thinness, sufficient rigidity is provided by the thick first copper foil 11. Therefore, even if the insulating layer 13 with the first copper foil being processed is transported on the transport conveyor, it can be transported satisfactorily without being caught or caught in the roll of the transport conveyor. In this example, the first wiring conductor 2 is formed by a known semi-additive method, but the first wiring conductor 2 may be formed by a known subtractive method.

  Next, as shown in FIG. 2 (e), a second copper foil 15 is stretched on the upper surface of the first insulating layer 1 on which the first wiring conductor 2 is formed, and on the upper surface of the second insulating layer 3. A laminated body 17 is formed by laminating the attached second insulating layer 16 with copper foil. When laminating the insulating layer 16 with the second copper foil, the second copper foil in which the second insulating layer 3 is semi-cured on the upper surface of the first insulating layer 1 on which the first wiring conductor 2 is formed. The attached insulating layers 16 may be superposed, heated to a temperature of 175 to 245 ° C., and a pressure of 2 to 3 MPa may be applied from above and below. In addition, the thickness of the 2nd insulating layer 3 is 60 micrometers or less, and the thickness of the 2nd copper foil 15 is 30-80 micrometers.

  Next, as shown in FIG. 2 (f), the first copper foil 11 and the second copper foil 15 are etched away leaving the outer periphery in a frame shape to form frame-shaped copper foils 11a and 15a. To do. The widths of the frame-shaped copper foils 11a and 15a are each preferably about 10 to 15 mm. If the width of each of the frame-shaped copper foils 11a and 15a is less than 10 mm, there is a possibility that sufficient rigidity cannot be imparted to the assembled substrate being processed. The space for forming is reduced. The first copper foil 11 and the second copper foil 15 are etched on the lower surface of the first copper foil 11 and the upper surface of the second copper foil 15 in a shape corresponding to the frame-shaped copper foils 11a and 15a. A method is employed in which a resist layer is deposited and a portion of the first copper foil 11 and the second copper foil 15 exposed from the etching resist layer is removed by etching. In addition, during the formation of these etching resist layers and the etching of the first copper foil 11 and the second copper foil 15, the laminate 17 is processed while being transported on a transport conveyor having a transport roll. Is done. At this time, the laminated body 17 being processed has the first and second thick copper foils 11 and 15 or the frame-like copper foils 11a and 15a attached to the upper and lower surfaces thereof. The first copper foil 11 and the second copper foil 15 or the frame-shaped copper foils 11a and 15a provide sufficient rigidity. Therefore, even if the laminated body 17 being processed is transported on the transport conveyor, it can be transported satisfactorily without being caught or caught by the roll of the transport conveyor.

  Next, as shown in FIG. 3G, a via hole 7 reaching a part of the first wiring conductor 2 is formed in the first insulating layer 1 and the second insulating layer 3. The via hole 7 is processed by a laser, for example. The diameter of the via hole 7 is about 35 to 100 μm. In addition, after forming the via hole 7, it is preferable to perform a desmear process. Thereafter, a thin electroless plating layer (not shown) having a thickness of about 0.1 to 1 μm is deposited on the inside of the via hole 7 and the surfaces of the first and second insulating layers 1 and 3. The electroless plating layer functions as a base metal for the second plating metal layer 5P described later, and for example, an electroless copper plating layer is preferably used.

  Next, as shown in FIG. 3H, a plating resist 18 is deposited on the upper and lower surfaces of the laminate 17. In these plating resists 18, via holes 7 to which an electroless plating layer (not shown) is applied, and the periphery thereof, and openings for exposing positions where second wiring conductors 5 to be described later are formed are formed. The plating resist 18 is formed in the same manner as the plating resist 14 described above. At this time, the laminated body 17 being processed has frame-shaped copper foils 11a and 15a each having a width of 10 to 15 mm and a thickness of 30 μm or more attached to the outer peripheral portion thereof. Although the thickness of the layers 1 and 3 is as thin as 60 μm or less, sufficient rigidity is provided by the thick frame-shaped copper foils 11a and 15a. Therefore, even if the laminated body 17 being processed is transported on the transport conveyor, it can be transported satisfactorily without being caught or caught by the roll of the transport conveyor.

  Next, as shown in FIG. 3 (i), the via holes 7 exposed from the plating resist 18 and the periphery thereof, and the surfaces of the first and second insulating layers 1 and 3 at positions where the second wiring conductors 5 are formed are formed. A second plated metal layer 5P is deposited by electrolytic plating. For example, an electrolytic copper plating layer is preferably used as the second plating metal layer 5P.

  Next, as shown in FIG. 3J, the plating resist 18 is removed, and the electroless plating layer exposed from the second plating metal layer 5P is removed by etching. As a result, the second wiring conductor 5 composed of the second plated metal layer 5P with the electroless plated layer as a base is formed. The plating resist 18 is removed in the same manner as in the case of the plating resist 14 described above. The electroless plating layer is removed by etching in the same manner as in the case of the thin film copper foil 12 described above. At this time, the laminated body 17 being processed has frame-shaped copper foils 11a and 15a each having a width of 10 to 15 mm and a thickness of 30 μm or more attached to the outer peripheral portion thereof. Although the thickness of the layers 1 and 3 is as thin as 60 μm or less, sufficient rigidity is provided by the thick frame-shaped copper foils 11a and 15a. Therefore, even if the laminated body 17 being processed is transported on the transport conveyor, it can be transported satisfactorily without being caught or caught by the roll of the transport conveyor.

  Next, as shown in FIG. 3 (k), a part of the second wiring conductor 5 is exposed on the surfaces of the first and second insulating layers 1 and 3 on which the second wiring conductor 5 is formed. By forming the solder resist layer 6 having an opening, the collective substrate 10 shown in FIG. 1 is completed.

  Next, an example of another embodiment in the production method of the present invention will be described based on FIGS. 4 (a) to 4 (d) and FIGS. 5 (e) to 5 (h). 2 and 3 are denoted by the same reference numerals, and detailed description of the same steps as those in FIGS. 2 and 3 is omitted. First, as shown in FIG. 4A, the first and second insulating layers 1 and 3 stacked by performing the steps described based on FIGS. 2A to 3J described above. A laminated body 19 is formed in which the first wiring conductor 2 is formed between them, and the second wiring conductor 5 and the frame-shaped copper foils 11a and 15a are formed on the upper and lower surfaces. In this case, as described above, the first insulating layer 13 with copper foil for forming the laminated body 19 and the laminated body 19 being processed are not caught or caught in the roll of the conveyor. Moreover, since the laminated body 19 has sufficient rigidity, the substrate being processed is not caught or caught in the roll of the conveyer even in the process described below.

  Next, as shown in FIG. 4B, the third copper foil-insulated insulation in which the third copper foil 21 is stuck to the lower surface of the third insulating layer 20 on the lower surface of the first insulating layer 1. The layer 22 is laminated, and the fourth insulating layer 25 with the copper foil in which the fourth copper foil 24 is stuck on the upper surface of the fourth insulating layer 23 is laminated on the upper surface of the second insulating layer 3. In the case of such lamination, pressurization may be performed at a pressure of 2 to 3 MPa while a temperature of 175 to 245 ° C. is applied as in the case of the insulating layer 16 with the second copper foil described above. In addition, the thickness of the 3rd insulating layer 20 and the 4th insulating layer 23 is 60 micrometers or less, and the thickness of the 3rd copper foil 21 and the 4th copper foil 24 is about 15-20 micrometers.

  Next, as shown in FIG. 4 (c), the third copper foil 21 and the fourth copper foil 24 are etched away leaving the outer periphery in a frame shape to form frame-shaped copper foils 21a and 24a. To do. The width of the frame-shaped copper foils 21a and 24a is preferably about 10 to 15 mm, which is the same as that of the frame-shaped copper foils 11a and 15a. Etching of the third copper foil 21 and the fourth copper foil 24 may be performed in the same manner as in the case of the first copper foil 11 and the second copper foil 15 described above.

  Next, as shown in FIG. 4D, a via hole 7 reaching a part of the second wiring conductor 5 is formed in the third insulating layer 20 and the fourth insulating layer 23. The via hole 7 is processed by a laser, for example. The diameter of the via hole 7 is about 35 to 100 μm. In addition, after forming the via hole 7, it is preferable to perform a desmear process. Thereafter, a thin electroless plating layer (not shown) having a thickness of about 0.1 to 1 μm is applied to the inside of the via hole 7 and the surfaces of the third and fourth insulating layers 20 and 23. The electroless plating layer functions as a base metal for a third plating metal layer 26P described later, and for example, an electroless copper plating layer is preferably used.

  Next, as shown in FIG. 5E, the via hole 7 to which the electroless plating layer (not shown) is applied and the periphery thereof and a plating having an opening that exposes the position where the third wiring conductor 26 is formed are exposed. A resist 27 is formed on the surfaces of the third insulating layer 20 and the fourth insulating layer 23. The plating resist 27 is formed in the same manner as the plating resist 14 described above.

  Next, as shown in FIG. 5 (f), the via hole 7 exposed from the plating resist 27 and the periphery thereof, and the surfaces of the third and fourth insulating layers 20 and 23 at positions where the third wiring conductor 26 is formed are formed. A third plated metal layer 26P is deposited by electrolytic plating. As the third plated metal layer 26P, for example, an electrolytic copper plating layer is preferably used.

  Next, as shown in FIG. 5G, the plating resist 27 is removed, and the electroless plating layer exposed from the third plating metal layer 26P is removed by etching. As a result, the third wiring conductor 26 composed of the third plating metal layer 26P with the electroless plating layer as a base is formed. The plating resist 27 is removed in the same manner as in the case of the plating resist 14 described above. The electroless plating layer is removed by etching in the same manner as in the case of the thin film copper foil 12 described above.

  Next, as shown in FIG. 5H, a part of the third wiring conductor 26 is exposed on the surfaces of the third and fourth insulating layers 20 and 23 on which the third wiring conductor 26 is formed. The assembly substrate 30 is completed by forming the solder resist layer 6 having the opening.

  Next, an example of still another embodiment of the manufacturing method of the present invention will be described based on FIGS. 6 (a) to (e), FIGS. 7 (f) to (j) and FIGS. 8 (k) to (m). To do. 2 and 3 are denoted by the same reference numerals, and detailed description of the same steps as those in FIGS. 2 and 3 is omitted. First, as shown to Fig.6 (a), the above-mentioned laminated body 17 is formed by performing the process demonstrated based on the above-mentioned Fig.2 (a)-(e). In this case, as described above, the first insulating layer 13 with the copper foil 13 for forming the laminated body 17 and the laminated body 17 being processed are not caught or caught in the roll of the conveyor.

  Next, as shown in FIG. 6B, the second copper foil 15 is etched away leaving the outer periphery in a frame shape to form a frame-shaped copper foil 15a. The width of the frame is preferably about 10 to 15 mm. If it is 10 mm or less, there is a possibility that sufficient rigidity cannot be imparted to the laminated body 17 being processed, and if it is 15 mm or more, the space for forming the second wiring conductor 5 described later becomes small. . The etching of the second copper foil 15 is performed in the same manner as in the case of the copper foil 15 described above. In this case, the laminated body 17 being processed is given sufficient rigidity by the first copper foil 11 and the second copper foil 15 or the frame-shaped copper foils 11a and 15a. Therefore, even if the laminated body 17 being processed is transported on the transport conveyor, it can be transported satisfactorily without being caught or caught by the roll of the transport conveyor. Since the laminated body 17 has sufficient rigidity, the substrate being processed is not caught or caught in the roll of the transport conveyor even in the process described below.

  Next, as shown in FIG. 6C, a via hole 7 reaching the part of the first wiring conductor 2 is formed in the second insulating layer 3. The via hole 7 is processed by a laser, for example. The diameter of the via hole 7 is about 35 to 100 μm. In addition, after forming the via hole 7, it is preferable to perform a desmear process. Thereafter, a thin electroless plating layer (not shown) having a thickness of about 0.1 to 1 μm is applied to the inside of the via hole 7 and the surface of the second insulating layer 3. The electroless plating layer functions as a base metal for the second plating metal layer 5P described later, and for example, an electroless copper plating layer is preferably used.

  Next, as shown in FIG. 6 (d), an opening that exposes a via hole 7 to which an electroless plating layer (not shown) is applied and its periphery and a position where a second wiring conductor 5 described later is formed is formed. A plating resist 28 is formed on the surface of the second insulating layer 3. The plating resist 28 is formed in the same manner as the plating resist 14 described above. At this time, the laminated body 17 being processed has a first copper foil 11 having a thickness of 30 to 80 μm stuck to the lower surface thereof, and a width of 10 to 15 mm and a thickness of 30 μm or more to the outer peripheral portion of the upper surface. Since the frame-shaped copper foil 15a is stretched, the first copper foil 11 having a thickness of 30 μm or more despite the thickness of the first and second insulating layers 1 and 3 being as thin as 60 μm or less, And sufficient rigidity is provided by frame-shaped copper foil 15a. Therefore, even if the collective substrate being processed is transported onto the transport conveyor, it can be transported satisfactorily without being caught or caught in the roll of the transport conveyor.

  Next, as shown in FIG. 6E, the via hole 7 exposed from the plating resist 28 and its surroundings and the surface of the second insulating layer 3 at the position where the second wiring conductor 5 is formed are electroplated. 2 plating metal layer 5P is deposited. An electrolytic copper plating layer is suitably used as the second plating metal layer 5P.

  Next, as shown in FIG. 7F, the plating resist 28 is removed, and the electroless plating layer exposed from the second plating metal layer 5P is removed by etching. As a result, the second wiring conductor 5 composed of the second plated metal layer 5P with the electroless plated layer as a base is formed. The plating resist 28 is removed in the same manner as in the case of the plating resist 14 described above. The electroless plating layer is removed by etching in the same manner as in the case of the thin film copper foil 12 described above. At this time, the laminated body 17 being processed has a first copper foil 11 having a thickness of 30 to 80 μm stuck to the lower surface thereof, and a width of 10 to 15 mm and a thickness of 30 μm or more to the outer peripheral portion of the upper surface. Since the frame-shaped copper foil 15a is stretched, the first copper foil 11 having a thickness of 30 μm or more despite the thickness of the first and second insulating layers 1 and 3 being as thin as 60 μm or less, And sufficient rigidity is provided by frame-shaped copper foil 15a. Therefore, even if the laminated body 17 being processed is transported on the transport conveyor, it can be transported satisfactorily without being caught or caught by the roll of the transport conveyor.

  Next, as shown in FIG. 7G, the third copper foil-insulated insulation in which the third copper foil 21 is stuck on the upper surface of the third insulating layer 20 on the upper surface of the second insulating layer 3. Layer 22 is laminated. In the case of such lamination, pressurization may be performed at a pressure of 2 to 3 MPa while a temperature of 175 to 245 ° C. is applied as in the case of the insulating layer 16 with the second copper foil described above. In addition, the thickness of the 3rd insulating layer 20 is 60 micrometers or less, and the thickness of the 3rd copper foil 21 is about 15-20 micrometers.

  Next, as shown in FIG. 7 (h), the first copper foil 11 and the third copper foil 21 are etched away leaving the outer periphery in a frame shape to form frame-shaped copper foils 11a and 21a. To do. The width of the frame-shaped copper foils 11a and 21a is preferably about 10 to 15 mm, which is the same as that of the frame-shaped copper foil 15a described above. The etching of the first copper foil 11 and the third copper foil 21 may be performed in the same manner as the second copper foil 15 described above.

  Next, as shown in FIG. 7 (i), a via hole 7 reaching a part of the first wiring conductor 2 is formed in the first insulating layer 1, and the second wiring is formed in the third insulating layer 20. A via hole 7 reaching a part of the conductor 5 is formed. The via hole 7 is processed by a laser, for example. The diameter of the via hole 7 is about 35 to 100 μm. In addition, after forming the via hole 7, it is preferable to perform a desmear process. Thereafter, a thin electroless plating layer (not shown) having a thickness of about 0.1 to 1 μm is applied to the inside of the via hole 7 and the surfaces of the first and third insulating layers 1 and 20. The electroless plating layer functions as a base metal for a third plating metal layer 26P described later, and for example, an electroless copper plating layer is preferably used.

  Next, as shown in FIG. 7 (j), plating having an opening that exposes the via hole 7 to which the electroless plating layer (not shown) is deposited and its periphery and the position where the third wiring conductor 26 is formed. A resist 29 is formed on the surfaces of the first insulating layer 1 and the third insulating layer 20. The plating resist 29 is formed in the same manner as the plating resist 14 described above.

  Next, as shown in FIG. 8 (k), the via holes 7 exposed from the plating resist 29 and the periphery thereof, and the surfaces of the first and third insulating layers 1 and 20 at positions where the third wiring conductors 26 are formed are formed. A third plated metal layer 26P is deposited by electrolytic plating. As the third plated metal layer 26P, for example, an electrolytic copper plating layer is preferably used.

  Next, as shown in FIG. 8L, the plating resist 29 is removed, and the electroless plating layer exposed from the third plating metal layer 26P is removed by etching. As a result, the third wiring conductor 26 composed of the third plating metal layer 26P with the electroless plating layer as a base is formed. The plating resist 29 is removed in the same manner as in the case of the plating resist 14 described above. The electroless plating layer is removed by etching in the same manner as in the case of the thin film copper foil 12 described above.

Next, as shown in FIG. 8 (m), a part of the third wiring conductor 26 is exposed on the surfaces of the first and third insulating layers 1 and 20 on which the third wiring conductor 26 is formed. By forming the solder resist layer 6 having openings, the collective substrate 40 is completed.

DESCRIPTION OF SYMBOLS 1 1st insulating layer 2 1st wiring conductor 3 2nd insulating layer 5 2nd wiring conductor 7 Via hole 10 Collective board 11 1st copper foil 13 Insulating layer 15 with 1st copper foil 2nd copper foil 16 Second insulating layer with copper foil

Claims (4)

  A first step of preparing an insulating layer with a first copper foil in which a first copper foil having a thickness of 30 μm or more is attached to a lower surface of a first insulating layer having a thickness of 60 μm or less; and the first insulation A second step of forming a first wiring conductor on the upper surface of the layer; and a second insulating layer having a thickness of 60 μm or less on the upper surface of the first insulating layer with copper foil on which the first wiring conductor is formed A third step of laminating a second copper foil insulating layer in which a second copper foil having a thickness of 30 μm or more is stuck on the upper surface of the substrate, and at least one of the first and second copper foils is disposed on the outer periphery thereof. A fourth step in which at least one central portion of the first and second insulating layers is exposed by etching and leaving a portion in a frame shape, and at least one of the exposed first and second insulating layers Including a fifth step of forming a via hole reaching the first wiring conductor, and the inside of the via hole Serial first and second sixth step in the method of manufacturing the aggregate substrate and performing a second wiring conductor on at least one surface of the insulating layer is formed by a semi-additive method.   In the fourth step, both the first and second copper foils are etched leaving the outer periphery in a frame shape to expose the central portions of both the first and second insulating layers, In the fifth step, a via hole reaching the first wiring conductor is formed in both the first and second insulating layers. In the sixth step, the first and second layers including the inside of the via hole are formed. 2. The method for manufacturing a collective substrate according to claim 1, wherein the second wiring conductor is formed on both surfaces of the insulating layer by a semi-additive method. A third copper foil having a thickness of 15 μm or more is stuck to the lower surface of the third insulating layer having a thickness of 60 μm or less on the lower surface of the first insulating layer with copper foil on which the second wiring conductor is formed. In addition, the third insulating layer with copper foil is laminated, and the upper surface of the second insulating layer with copper foil on which the second wiring conductor is formed is formed on the upper surface of the fourth insulating layer with a thickness of 60 μm or less. A seventh step of laminating a fourth copper foil insulating layer to which a fourth copper foil having a thickness of 15 μm or more is adhered; and leaving the outer periphery of the third and fourth copper foils in a frame shape An eighth step of exposing the central portion of the third and fourth insulating layers by etching, and forming a via hole reaching the second wiring conductor on the lower surface side in the exposed third insulating layer; And forming a via hole reaching the second wiring conductor on the upper surface side in the exposed fourth insulating layer. A ninth step and a tenth step of forming a third wiring conductor on the surfaces of the third and fourth insulating layers including the inside of the via hole formed in the ninth step by a semi-additive method are performed. The method for manufacturing a collective substrate according to claim 2.
  In the fourth step, the second copper foil is etched leaving its outer periphery in a frame shape to expose the central portion of the second insulating layer, and in the fifth step, the exposed first A via hole reaching the first wiring conductor is formed in the second insulating layer, and in the sixth step, the second wiring conductor is semi-additively formed on the exposed surface of the second insulating layer including the inside of the via hole. And a third insulating layer having a thickness of 15 μm or more on the upper surface of the third insulating layer having a thickness of 60 μm or less on the surface of the second insulating layer with copper foil formed by the second wiring conductor. An eleventh step of laminating an insulating layer with a third copper foil to which the copper foil is attached, and etching the first copper foil and the third copper foil leaving the outer periphery in a frame shape A twelfth step of exposing a central portion of the first and third insulating layers; Forming a via hole reaching the first wiring conductor in the exposed first insulating layer and forming a via hole reaching the second wiring conductor in the exposed third insulating layer; And a fourteenth step of forming a third wiring conductor on a surface of the first and third insulating layers including the inside of the via hole formed in the thirteenth step by a semi-additive method. Item 12. A method for manufacturing an aggregate substrate according to Item 1.

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