JP2013147734A - METHOD FOR PRODUCING Mo ALLOY SPUTTERING TARGET MATERIAL, AND Mo ALLOY SPUTTERING TARGET MATERIAL - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a production method capable of stably and inexpensively providing a high density, high purity and nonmagnetic Mo alloy sputtering target material having low resistance, further having excellent heat resistance, moisture resistance and adhesion with a substrate and suitable as an electrode and a wiring film, and to provide a new Mo alloy sputtering target material.SOLUTION: Mo powders and one or more of Ni alloy powders are mixed so as to satisfy a composition which includes 10 to 49 atomic% Ni and 1 to 20 atomic% Nb, and in which the total content of Ni and Nb is ≤50 atomic%, and which has the balance Mo with inevitable impurities, and the mixture thereof is then subjected to press sintering.

Description

  The present invention relates to a method for producing a Mo alloy sputtering target material for forming an electrode / wiring film for an electronic component and a Mo alloy sputtering target material.

  Flat surfaces such as liquid crystal displays (Liquid Crystal Display: hereinafter referred to as LCD), plasma display panels (hereinafter referred to as PDP), electrophoretic displays used for electronic paper, etc., which form a thin film device on a glass substrate In addition to display devices (flat panel displays: hereinafter referred to as FPD), thin film electronic components such as various semiconductor devices, thin film sensors, magnetic heads, etc. require wiring films with low electrical resistance. For example, FPDs such as LCDs, PDPs, and organic EL displays are required to have low resistance in their wiring films in accordance with large screens, high definition, and high speed response. In recent years, new products such as a touch panel for adding operability to the FPD and a flexible FPD using a resin substrate have been developed.

In recent years, it is necessary to reduce the resistance of a wiring film of a thin film transistor (hereinafter referred to as TFT) used as an FPD driving element, and the main wiring material is changed from conventional Al to a lower resistance Cu. Consideration is being made.
At present, Si semiconductor films are used for TFTs. When Cu, which is the main wiring material, is in direct contact with Si, it is thermally diffused by a heating process during the manufacture of the TFTs, thereby degrading the characteristics of the TFTs. For this reason, a laminated wiring film using pure Mo or Mo alloy having excellent heat resistance between Cu and Si as a barrier film is used.

In addition, touch panel substrate screens that provide direct operability while viewing the screen of the FPD are also increasing in size, and studies are underway to use low-resistance Cu as the main wiring material.
A pixel electrode connected to a TFT, or a position detection electrode of a touch panel used for a portable terminal, a tablet PC, or the like is generally made of indium tin oxide (hereinafter referred to as ITO) which is a transparent conductive film. It is used. Although Cu can be contacted with ITO, it has to have a laminated wiring film in which Cu is coated with pure Mo or Mo alloy in order to ensure adhesion because of its low adhesion to the substrate.
Furthermore, application studies of transparent semiconductor films using oxides that can realize faster response than conventional amorphous Si semiconductors are being conducted, and Cu and pure Mo are also used for these oxide semiconductor wiring films. The laminated wiring film used has been studied. For this reason, the demand of the thin film wiring which consists of Mo alloy thin film used for formation of these laminated wiring films is increasing.

  The present applicant has proposed a thin-film wiring in which 3-50 atomic% of V is added to Mo and Ni and Cu are further added to Nb as a low-resistance Mo alloy thin film excellent in heat resistance, corrosion resistance and adhesion to the substrate. In this example, the invention of a thin film wiring having a composition of Mo-15Nb-10Ni (atomic%) is specifically disclosed (Patent Document 1).

On the other hand, a sputtering method using a sputtering target material is optimal as a method for forming the above-described thin film wiring. The sputtering method is one of physical vapor deposition methods, and can be stably formed in a large area compared to other vacuum vapor deposition and ion plating. This is an effective technique for obtaining a few excellent thin films.
As a method for obtaining such a sputtering target material, for example, as disclosed in Patent Document 2, a mixed powder or an atomizing method in which raw material Mo powder, Ni powder and a powder composed of other additive elements (for example, Nb) are mixed. There has been proposed a method of machining a sintered body obtained by pressure-sintering the Mo alloy powder obtained in (1).

JP 2004-140319 A JP 2010-132974 A

In order to stably obtain a high-quality alloy thin film, a sputtering target material serving as a base material for the alloy thin film requires high density, high purity, low gas components, and a uniform structure without segregation. In order to obtain such a structure, it is desirable to use Mo alloy powder in which all component elements are previously alloyed as proposed in Patent Document 2.
However, since Mo is a refractory metal, the melting point of Mo alloy containing Mo as the main component is high, and it is melted using a commonly used induction heating device to produce Mo alloy powder with high yield by the atomization method. It is difficult to do. In addition, since the Mo alloy has a high melting point, it is difficult to obtain a high-density sintered body when the particle size of the alloy powder is large, and impurities in the obtained sputtering target material increase when attempting to make the particle size of the alloy powder fine. There's a problem.
In addition, when Mo is oxidized, the oxide easily sublimates and vaporizes before reaching the melting point of Mo. Therefore, in order to suppress the oxidation of Mo during the process, a large and expensive apparatus with controlled dissolution atmosphere is required. Therefore, the obtained Mo alloy powder is also expensive.

  Furthermore, simply mixing Mo powder, Ni powder and Nb powder as the raw material powder to obtain a mixed powder, and when this is pressure-sintered, it is magnetic in the sputtering target material due to insufficient alloying In some cases, Ni ferromagnetic phase that tends to be charged remains, resulting in a decrease in sputtering speed and a shortened life of the sputtering target material.

  The object of the present invention is to provide a stable, high-density, high-purity, non-magnetic Mo alloy sputtering target material suitable for an electrode / wiring film with low resistance, excellent heat resistance, moisture resistance and adhesion to the substrate. An object of the present invention is to provide a production method that can be provided at low cost and a novel Mo alloy sputtering target material.

  In view of the above problems, the present inventor has intensively studied a Mo alloy sputtering target material mainly composed of Mo having a high melting point. As a result, by optimizing the properties of the powder added to the main component Mo, the high density required to obtain a high-quality thin film with low resistance and excellent heat resistance, moisture resistance and adhesion to the substrate. The present inventors have found a method by which a high-purity Mo alloy sputtering target material can be produced stably and inexpensively, and have reached the present invention.

That is, the present invention includes a Mo alloy sputtering target containing 10 to 49 atomic percent of Ni and 1 to 20 atomic percent of Nb, the total amount of Ni and Nb being 50 atomic percent or less, and the balance being Mo and inevitable impurities. An invention of a method for producing a Mo alloy sputtering target material, wherein Mo powder and one or more Ni alloy powders are mixed so as to satisfy the above composition, followed by pressure sintering It is.
The Ni alloy powder is preferably made of a Ni—Nb alloy, and more preferably the Ni—Nb alloy powder is made of Ni ₆ Nb ₇ and / or Ni ₃ Nb.
The Ni alloy powder is made of a Ni—Mo alloy, and it is preferable to add and mix pure Nb powder.

The present invention also provides a Mo alloy sputtering target containing 10 to 49 atomic percent of Ni and 1 to 20 atomic percent of Nb, the total amount of Ni and Nb being 50 atomic percent or less, and the balance being Mo and inevitable impurities. It is an invention of a Mo alloy sputtering target material which has a structure in which a Ni alloy phase is dispersed in a Mo matrix.
The Ni alloy phase is preferably composed of a Ni—Mo alloy phase and a Ni—Nb alloy phase, and the Ni—Nb alloy phase is more preferably composed of Ni ₆ Nb ₇ and / or Ni ₃ Nb.
The Mo alloy sputtering target material of the present invention more preferably has a diffusion layer at the interface between the Ni-Mo alloy phase and the Mo matrix.

  The present invention makes it possible to stably and inexpensively produce a non-magnetic Mo alloy sputtering target material with high density, high purity, low resistance, excellent heat resistance, moisture resistance and adhesion to the substrate, A Mo alloy sputtering target material suitable for forming an electrode / wiring film can be provided. Therefore, the present invention is a useful technique for manufacturing electronic components and improving reliability.

It is an example of the cross-sectional micro observation structure | tissue photograph of Mo alloy sputtering target material of this invention. It is another example of the cross-sectional micro observation structure | tissue photograph of Mo alloy sputtering target material of this invention.

  An alloy containing Mo as a main component has a high melting point, and it is difficult to form a powder by alloying by a conventionally used atomizing method, and there are various problems in obtaining a sputtering target material stably and inexpensively. As described above.

An important feature of the production method according to the present invention is that the Mo powder and the specific Ni alloy powder are mixed and then sintered under pressure without melting the Mo alloy having a high melting point. This will be described in detail below.
First, the powder used in the production method of the present invention will be described. As the Mo powder used in the present invention, a commercially available Mo powder that is easily available can be used. If the average particle size of the Mo powder is less than 1 μm, impurities in the obtained sputtering target material increase, and if it exceeds 50 μm, it becomes difficult to obtain a high-density sintered body. Therefore, the range of the average particle diameter of the Mo powder is preferably 1 μm to 50 μm. The Mo powder is preferably mixed in an amount of 50 atomic% or more in order to form a Mo matrix.
For example, Ni—Nb alloy or Ni—Mo alloy powder can be used as the Ni alloy powder used in the production method of the present invention. Thereby, since melting | fusing point of each Ni alloy powder can be made lower than melting | fusing point of Nb and Mo, manufacture of alloy powder, sintering of powder mixture, and densification become easy. These Ni alloy powders can be easily obtained by an atomizing method with an alloy prepared in a predetermined component ratio. When the average particle size of the Ni alloy powder is less than 5 μm, impurities in the obtained sputtering target material increase, and when it exceeds 300 μm, it becomes difficult to obtain a high-density sintered body. Therefore, the range of the average particle size of the Ni alloy powder is preferably 5 μm to 300 μm.
In addition, the average particle diameter as used in the field of this invention is represented by the spherical equivalent diameter by the light-scattering method using a laser beam prescribed | regulated by JISZ8901.

  Further, the Ni alloy powder used in the production method of the present invention is preferably a Ni—Nb alloy or Ni—Mo. This is because, as described above, Ni is a magnetic material, and when the amount of Ni added increases, a Ni ferromagnetic phase that tends to be magnetized remains in the sputtering target material, and in magnetron sputtering generally used in FPD, This is because the sputtering rate may decrease and the life of the sputtering target material may be shortened. For this reason, in the present invention, Ni is preferably alloyed with Mo or Nb to form a nonmagnetic Ni alloy phase. Specifically, Ni alloy powder is used in order to obtain a structure dispersed in a Ni—Nb alloy phase and / or a Ni—Mo alloy phase in a Mo matrix. Thereby, in this invention, it becomes possible to obtain a sputtering target material with good sputter property.

Of the Ni alloy powders, the Ni—Nb alloy powder is preferably made of an intermetallic compound of Ni ₆ Nb ₇ and / or Ni ₃ Nb. The Ni alloy powder made of these intermetallic compounds has a melting point lower than that of Ni, and a high-purity alloy powder can be easily obtained by the atomizing method.
Further, the Ni-Mo alloy powder preferably has a composition containing 8 atomic% or more of Mo which becomes paramagnetic at room temperature or higher, and even if it contains up to 60 atomic%, the melting point is lower than that of Ni. It is possible to easily obtain an alloy powder. Ni-Mo alloys are also an intermetallic compound, so that they are brittle and can be easily obtained by melting and pulverizing, and are preferable because they are inexpensive. From the above, in the present invention, it is preferable to use a Ni—Mo powder having a Mo content of 60 atomic% or less. At this time, it is more preferable to add and mix pure Nb powder so as to be a component of the present invention.
In the production method of the present invention, Ni-Nb-Mo alloy whose components are adjusted so that the melting point is lower than that of Ni is atomized or dissolved and pulverized to produce Ni alloy powder as Ni alloy powder. Is also possible.

Next, the manufacturing method of the present invention will be described. In the manufacturing method of the Mo alloy sputtering target of the present invention, the Mo powder and the Ni alloy powder described above are mixed so as to satisfy the target composition, and then subjected to pressure sintering. By linking, a high-density and high-purity Mo alloy sputtering target material can be produced.
In the production method of the present invention, the above-described mixed powder is sintered by pressure sintering. The pressure sintering can be performed by hot isostatic pressing or hot pressing, and is preferably performed at a sintering temperature of 800 to 1500 ° C. and a pressure of 10 to 200 MPa for 1 to 10 hours.
The selection of these conditions depends on the pressure sintering apparatus. For example, hot isostatic pressing is easy to apply low temperature and high pressure conditions, and hot pressing is easy to apply high temperature and low pressure conditions. In the production method of the present invention, a hot isostatic press that can be sintered at a low temperature to suppress diffusion of Ni and Nb and that can be sintered at a high pressure to obtain a high-density sintered body is used in the production method of the present invention. It is preferable to use it.

If the sintering temperature is less than 800 ° C., the sintering is difficult to proceed and a high-density sintered body cannot be obtained. On the other hand, when the sintering temperature exceeds 1500 ° C., a liquid phase appears or crystal growth of the sintered body becomes remarkable, and it becomes difficult to obtain a uniform fine structure.
Also, if the pressure is less than 10 MPa, sintering does not proceed easily and a high-density sintered body cannot be obtained. On the other hand, when the pressure exceeds 200 MPa, there is a problem that the apparatus that can withstand is limited.
Further, if the sintering time is less than 1 hour, it is difficult to sufficiently advance the sintering, and a high-density sintered body cannot be obtained. On the other hand, if the sintering time exceeds 10 hours, it is better to avoid the production efficiency.
In addition, when performing pressure sintering by hot isostatic pressing or hot pressing, it is desirable to deaerate under reduced pressure while heating after filling the mixed powder into a pressure vessel or a pressure die. The vacuum degassing is desirably performed under a reduced pressure lower than the atmospheric pressure (101.3 kPa) in the heating temperature range of 100 to 600 ° C. This is because oxygen in the obtained sintered body can be further reduced, and a high-purity Mo alloy sputtering target material can be obtained.

  Next, the Mo alloy sputtering target material of the present invention will be described. Ni is contained in 10 to 49 atomic%, Nb is contained in 1 to 20 atomic%, the total amount of Ni and Nb is 50 atomic% or less, and the balance is Mo and inevitable. It has a structure in which a Ni alloy phase is dispersed in a Mo matrix. Here, the Ni alloy phase means a Ni—Nb alloy phase, a Ni—Mo alloy phase, or a Ni—Nb—Mo alloy phase.

The reason why Ni or Nb is added to Mo in the present invention is to secure heat resistance and moisture resistance as a protective film laminated with Cu or Al, and adhesion as a base film. This will be described in detail below.
If the amount of Ni added is less than 10 atomic%, the effect of suppressing oxidation is not sufficient as a protective film for Cu, Al, etc. On the other hand, Ni is an element that is easily thermally diffused into Cu or Al. It becomes easy to diffuse to Cu and Al, and the electrical resistance value of Cu and Al tends to increase. Therefore, in the present invention, the amount of Ni added is 10 to 49 atomic%, and the total of Ni and Nb is 50 atomic% or less.

Further, if the amount of Nb added is less than 1 atomic%, the moisture resistance improving effect cannot be obtained. On the other hand, when the addition amount of Nb is 20 atomic% or more, the effect of improving the moisture resistance is saturated, and Nb is an expensive element, and the addition amount as small as possible is desirable. Therefore, in the present invention, the amount of Nb added is 1 to 20 atomic%.
In the present invention, in addition to suppressing oxidation and improving moisture resistance, Ni is added in the range of 15 to 35 atomic% and Nb in the range of 3 to 10 atomic% in order to suppress thermal diffusion to Cu and Al. Is more preferable.

  Moreover, it is desirable that the Mo alloy sputtering target material of the present invention contains as few elements as possible except for the main components Mo, Ni, and Nb. If there are many impurities other than the main component, the electrical resistance of the thin film may increase, or the characteristics such as adhesion, moisture resistance, and oxidation resistance may be deteriorated by reacting with other laminated thin films depending on the type of element. In particular, oxygen and nitrogen as gas components are easily taken into the thin film, thereby reducing adhesion and causing defects in the thin film. Accordingly, in the present invention, the purity is 99.9% or more, and impurities such as oxygen are preferably 1000 ppm by mass or less, and more preferably 300 ppm by mass or less.

The following examples illustrate the invention in detail.
In order to produce a Mo alloy sputtering target material having an atomic ratio of 15% Ni-5% Nb—the balance being Mo and unavoidable impurities, Mo powder having a purity of 99.99% and an average particle size of 6 μm was prepared by an atomizing method. Ni ₃ Nb alloy powder having a purity of 99.9% and an average particle diameter of 70 μm was prepared. For comparison, an attempt was made to prepare by a melting method, but Mo remained undissolved and a normal alloy lump could not be made.

  Each powder was weighed so as to have the above composition, and mixed with a cross rotary mixer to obtain a mixed powder. After that, a soft steel container having an inner diameter of 133 mm, a height of 30 mm, and a thickness of 3 mm is filled, heated at 450 ° C. for 10 hours and degassed, and then the soft steel container is sealed and hot isostatic press ( HIP) was sintered at 1180 ° C. and 148 MPa for 3 hours. After cooling, it was taken out from the HIP device, the soft steel container was removed by machining, a Mo alloy sputtering target material having a diameter of 100 mm and a thickness of 5 mm was obtained, and a test piece was cut out from the remainder.

When the relative density of the obtained test piece was measured by the Archimedes method, it was 99.9%, and according to the manufacturing method of this invention, it has confirmed that a high-density Mo alloy sputtering target material could be obtained. The relative density here is 100 divided by a value obtained by dividing the bulk density measured by the Archimedes method by the theoretical density obtained as a weighted average of elemental elements calculated by the mass ratio obtained from the composition ratio of the Mo alloy sputtering target material. The value obtained by multiplying.
Further, quantitative analysis of the metal element of the obtained test piece is performed with a dielectric plasma emission analyzer (ICP) of model number: ICPV-1017 manufactured by Shimadzu Corporation, and the determination of oxygen is measured by a non-dispersive infrared absorption method. As a result, the total purity of the analytical values of Mo, Ni, and Nb is 99.9%, and the oxygen concentration is 350 mass ppm. According to the manufacturing method of the present invention, a high-purity Mo alloy sputtering target material can be obtained. I was able to confirm.

  The test piece obtained above is mirror-polished, then corroded with a Nital reagent, and the result of observing the structure with an optical microscope is shown in FIG. As shown in FIG. 1, the Mo alloy sputtering target material of the present invention has a structure in which a Ni alloy phase close to a sphere is dispersed in a finely recrystallized matrix of Mo, such as segregation and vacancies. No large defects were confirmed, and it was confirmed that the sputtering target material was suitable for sputtering film formation.

  In addition, after brazing the Mo alloy sputtering target material having a diameter of 100 mm and a thickness of 5 mm obtained above to a copper backing plate, it was attached to a sputtering apparatus of model number SPF-440HL manufactured by Canon Anelva Co., Ltd., Ar atmosphere, Sputtering was performed at a pressure of 0.5 Pa and a power of 500 W. It was confirmed that when sputtering was performed using the Mo alloy sputtering target of the present invention, stable sputtering could be performed without abnormal discharge.

Samples each having a 200 nm-thick Mo alloy thin film formed on a 25 × 50 mm glass substrate of Corning Corporation product number: EagleXG were prepared under the above conditions, and evaluated for adhesion, moisture resistance, and heat resistance.
The evaluation of adhesion was performed by a method defined in JIS K5400. First, a transparent adhesive tape (product name: transparent beautiful color) manufactured by Sumitomo 3M Co., Ltd. is applied on the Mo alloy thin film, and a square of 2 mm square is put with a cutter knife, and the transparent adhesive tape is peeled off. Evaluation was made based on the presence or absence of residual. It was confirmed that the thin film formed using the Mo alloy sputtering target material of the present invention was not peeled off, and had high adhesion.
For the evaluation of moisture resistance, the Mo alloy thin film was left in an atmosphere at a temperature of 85 ° C. and a humidity of 85% for 100 hours, and the presence or absence of discoloration on the surface of the Mo alloy thin film was visually confirmed. It was confirmed that the formed thin film using the Mo alloy sputtering target material of the present invention did not change color even when exposed to a high temperature and high humidity atmosphere, and had high moisture resistance.
In the evaluation of heat resistance, the Mo alloy thin film was heated at 300 ° C. in the atmosphere for 30 minutes, and the presence or absence of discoloration of the Mo alloy thin film was visually confirmed. It was confirmed that the thin film formed using the Mo alloy sputtering target material of the present invention did not change color even when heated at a high temperature, and had a high heat resistance.

  In order to produce 20% Ni-10% Nb-balance Mo and unavoidable Mo alloy sputtering target material in atomic ratio, Mo powder with a purity of 99.99% and an average particle size of 6 μm, and the purity produced by the atomization method A 9-30% Ni-30Mo (atomic%) alloy powder having an average particle size of 100 μm and an Nb powder having an average particle size of 85 μm were prepared. For comparison, an attempt was made to prepare by a melting method, but Mo remained undissolved and a normal alloy lump could not be made.

  Each powder was weighed so as to have the above composition, and mixed with a cross rotary mixer to obtain a mixed powder. After that, a soft steel container having an inner diameter of 133 mm, a height of 30 mm, and a thickness of 3 mm is filled, heated at 450 ° C. for 10 hours and degassed, and then the soft steel container is sealed and hot isostatic press ( HIP) was sintered at 1100 ° C. and 148 MPa for 5 hours. After cooling, it was taken out from the HIP device, the soft steel container was removed by machining, a Mo alloy sputtering target material having a diameter of 100 mm and a thickness of 5 mm was obtained, and a test piece was cut out from the remainder.

When the relative density of the obtained test piece was measured by the Archimedes method in the same manner as in Example 1, it was 99.9%. According to the production method of the present invention, a high-density Mo alloy sputtering target material can be obtained. I was able to confirm.
In addition, quantitative analysis of the metal elements of the obtained test piece is performed by ICP (dielectric plasma emission analyzer) of model number: ICPV-1017 manufactured by Shimadzu Corporation, and the quantitative determination of oxygen is measured by a non-dispersive infrared absorption method. As a result, the total purity of the analytical values of Mo, Ni, and Nb is 99.9%, and the oxygen concentration is 500 ppm by mass. According to the manufacturing method of the present invention, a high-purity Mo alloy sputtering target material can be obtained. I was able to confirm.

  The test piece obtained above is mirror-polished, then corroded with a Nital reagent, and the result of observation of the structure with an optical microscope is shown in FIG. As shown in FIG. 2, the Mo alloy sputtering target material of the present invention has a nearly Ni-Mo alloy phase obtained by atomization in a finely recrystallized matrix of Mo, and Nb obtained by pulverization. It has a structure in which powder is dispersed, and there is a diffusion layer with Mo around it, and no large defects such as segregation or vacancies are confirmed, and it can be confirmed that it is a sputtering target material suitable for sputtering film formation It was.

  In addition, after brazing the Mo alloy sputtering target material having a diameter of 100 mm and a thickness of 5 mm obtained above to a copper backing plate, it was attached to a sputtering apparatus of model number SPF-440HL manufactured by Canon Anelva Co., Ltd., Ar atmosphere, Sputtering was performed at a pressure of 0.5 Pa and a power of 500 W. It was confirmed that when sputtering was performed using the Mo alloy sputtering target of the present invention, stable sputtering could be performed without abnormal discharge.

Samples each having a 200 nm-thick Mo alloy thin film formed on a 25 × 50 mm glass substrate of Corning Corporation product number: EagleXG were prepared under the above conditions, and evaluated for adhesion, moisture resistance, and heat resistance.
The evaluation of adhesion was performed by a method defined in JIS K5400. First, a transparent adhesive tape (product name: transparent beautiful color) manufactured by Sumitomo 3M Co., Ltd. is applied on the Mo alloy thin film, and a square of 2 mm square is put with a cutter knife, and the transparent adhesive tape is peeled off. Evaluation was made based on the presence or absence of residual. It was confirmed that the thin film formed using the Mo alloy sputtering target material of the present invention was not peeled off, and had high adhesion.
In the evaluation of moisture resistance, the Mo alloy thin film was left in an atmosphere at a temperature of 85 ° C. and a humidity of 85% for 300 hours, and the presence or absence of discoloration on the surface of the Mo alloy thin film was visually confirmed. It was confirmed that the formed thin film using the Mo alloy sputtering target material of the present invention did not change color even when exposed to a high temperature and high humidity atmosphere, and had high moisture resistance.
In the evaluation of heat resistance, the Mo alloy thin film was heated at 400 ° C. in the atmosphere for 30 minutes, and the presence or absence of discoloration of the Mo alloy thin film was visually confirmed. It was confirmed that the thin film formed using the Mo alloy sputtering target material of the present invention did not change color even when heated at a high temperature, and had a high heat resistance.

Claims (8)

  A method for producing a Mo alloy sputtering target material containing 10 to 49 atomic percent of Ni, 1 to 20 atomic percent of Nb, the total amount of Ni and Nb being 50 atomic percent or less, and the balance being Mo and inevitable impurities. A method for producing a Mo alloy sputtering target material, comprising mixing Mo powder and one or more Ni alloy powders so as to satisfy the above composition, followed by pressure sintering.   The method for producing a Mo alloy sputtering target material according to claim 1, wherein the Ni alloy powder is made of a Ni—Nb alloy. The Ni-Nb alloy powder, a manufacturing method of Mo alloy sputtering target material according to claim 2, characterized in that it consists of _Ni 6 Nb ₇ and / or _Ni 3 Nb.   The method for producing a Mo alloy sputtering target material according to claim 1, wherein the Ni alloy powder is made of a Ni—Mo alloy, and pure Nb powder is further added and mixed.   A Mo alloy sputtering target material containing 10 to 49 atomic percent of Ni, 1 to 20 atomic percent of Nb, and a total amount of Ni and Nb of 50 atomic percent or less, with the balance being Mo and inevitable impurities, A Mo alloy sputtering target material having a structure in which a Ni alloy phase is dispersed in a Mo matrix.   The Mo alloy sputtering target material according to claim 5, wherein the Ni alloy phase is composed of a Ni—Mo alloy phase and / or a Ni—Nb alloy phase. The Mo alloy sputtering target material according to claim 6, wherein the Ni—Nb alloy phase is made of Ni ₆ Nb ₇ and / or Ni ₃ Nb.   The Mo alloy sputtering target material according to claim 6 or 7, further comprising a diffusion layer at an interface between the Ni-Mo alloy phase and the Mo matrix.