JP2013131626A - Wiring board - Google Patents

Wiring board Download PDF

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JP2013131626A
JP2013131626A JP2011280013A JP2011280013A JP2013131626A JP 2013131626 A JP2013131626 A JP 2013131626A JP 2011280013 A JP2011280013 A JP 2011280013A JP 2011280013 A JP2011280013 A JP 2011280013A JP 2013131626 A JP2013131626 A JP 2013131626A
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conductor pattern
opening
semiconductor element
conductor
solder resist
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Kiminori Tada
公則 多田
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Kyocera SLC Technologies Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a wiring board which achieves high electric insulation reliability between conductor patterns which are exposed from a solder resist layer and located close to each other.SOLUTION: The wiring board includes: an insulation substrate 1; a first conductor pattern 6a and a second conductor pattern 6b which are formed on a surface of the insulation substrate 1 so as to be located close to each other; a solder resist layer 3 which is deposited on the surface of the insulation substrate 1 and has openings 3b exposing the first conductor pattern 6a and the second conductor pattern 6b, the solder resist layer 3 where an opening edge of each opening 3b is formed traversing between the first conductor pattern 6a and the second conductor pattern 6b; and an electroless plating metal layer deposited on surfaces of the first conductor pattern 6a and the second conductor pattern 6b which are exposed from the openings 3b. The opening edge has bending parts A, each of which bends so as to form a V shape toward the outer side or the inner side of the opening 3b between the first conductor pattern 6a and the second conductor pattern 6b.

Description

本発明は、例えば半導体集積回路素子等の半導体素子を搭載する配線基板に関するものである。   The present invention relates to a wiring board on which a semiconductor element such as a semiconductor integrated circuit element is mounted.

図5に、半導体集積回路素子等の半導体素子Sを搭載するための従来の配線基板20を示す。図5に示すように、従来の配線基板20は、上面中央部に半導体素子Sを搭載するための搭載部11aを有する絶縁基板11の上面から下面にかけて複数の配線導体12を配設してなる。さらに絶縁基板11の上下面には、配線導体12の一部を露出させるようにしてソルダーレジスト層13が被着されている。絶縁基板11やソルダーレジスト層13は、例えばエポキシ樹脂等の熱硬化性樹脂を含む樹脂系絶縁材料からなる。また、配線導体12は、例えば銅箔や銅めっき等の銅系の金属材料からなる。   FIG. 5 shows a conventional wiring board 20 for mounting a semiconductor element S such as a semiconductor integrated circuit element. As shown in FIG. 5, the conventional wiring substrate 20 is formed by arranging a plurality of wiring conductors 12 from the upper surface to the lower surface of the insulating substrate 11 having a mounting portion 11a for mounting the semiconductor element S at the center of the upper surface. . Further, a solder resist layer 13 is deposited on the upper and lower surfaces of the insulating substrate 11 so that a part of the wiring conductor 12 is exposed. The insulating substrate 11 and the solder resist layer 13 are made of a resin-based insulating material including a thermosetting resin such as an epoxy resin. Moreover, the wiring conductor 12 consists of copper-type metal materials, such as copper foil and copper plating, for example.

配線導体12は、その一部が搭載部11a上に露出して半導体素子接続パッド14を形成している。この半導体素子接続パッド14には、半導体素子Sの電極Tが半田を介して接続される。また、配線導体12の別の一部は、絶縁基板11の下面に露出して外部接続パッド15を形成している。この外部接続パッド15は、外部の電気回路基板の配線導体に半田を介して接続される。なお、これらの半導体素子接続パッド14と外部接続パッド15とは、それぞれ対応するもの同士が絶縁基板11内部に配設された配線導体12を介して互いに接続されている。   A part of the wiring conductor 12 is exposed on the mounting portion 11 a to form a semiconductor element connection pad 14. An electrode T of the semiconductor element S is connected to the semiconductor element connection pad 14 via solder. Further, another part of the wiring conductor 12 is exposed on the lower surface of the insulating substrate 11 to form an external connection pad 15. The external connection pad 15 is connected to a wiring conductor of an external electric circuit board via solder. Note that these semiconductor element connection pads 14 and external connection pads 15 are connected to each other via wiring conductors 12 disposed inside the insulating substrate 11.

さらに、絶縁基板11の上面外周部には、配線導体12の一部からなる検査用パッド16が配設されている。検査用パッド16は、互いに対となった第1の導体パターン16aと第2の導体パターン16bとを有している。これらの第1の導体パターン16aおよび第2の導体パターン16bは、それぞれが特定の半導体素子接続パッド14に電気的に接続されている。そして、半導体素子接続パッド14に半導体素子Sの電極Tを接続した後、検査用パッド16に電気的検査装置のプローブを接続して測定することにより、半導体素子Sの動作の状態を確認することができる。   Further, an inspection pad 16 made of a part of the wiring conductor 12 is disposed on the outer peripheral portion of the upper surface of the insulating substrate 11. The inspection pad 16 has a first conductor pattern 16a and a second conductor pattern 16b that are paired with each other. Each of the first conductor pattern 16 a and the second conductor pattern 16 b is electrically connected to a specific semiconductor element connection pad 14. Then, after connecting the electrode T of the semiconductor element S to the semiconductor element connection pad 14, the state of the operation of the semiconductor element S is confirmed by connecting and measuring the probe of the electrical inspection device to the inspection pad 16. Can do.

絶縁基板11の上下面に被着されたソルダーレジスト層13のうち、上面側のソルダーレジスト層13は、半導体素子接続パッド14を個別に露出させる開口部13aと検査用パッド16の第1の導体パターン16aおよび第2の導体パターン16bの対を一括して露出させる開口部13bとを有している。また下面側のソルダーレジスト層13は、外部接続パッド15を個別に露出させる開口部13cを有している。   Of the solder resist layers 13 deposited on the upper and lower surfaces of the insulating substrate 11, the solder resist layer 13 on the upper surface side is an opening 13 a that individually exposes the semiconductor element connection pads 14 and the first conductors of the inspection pads 16. An opening 13b that exposes a pair of the pattern 16a and the second conductor pattern 16b in a lump is provided. Further, the solder resist layer 13 on the lower surface side has an opening 13c through which the external connection pad 15 is individually exposed.

そして、この配線基板20においては、半導体素子接続パッド14および外部接続パッド15ならびに検査用パッド16におけるソルダーレジスト層13からの露出表面にニッケルめっき層と金めっき層とを無電解めっき法により順次被着させておくことがある。これらのめっき層を被着させることにより、半導体素子接続パッド14および外部接続パッド15ならびに検査用パッド16の酸化腐食を防止するとともに半導体素子接続パッド14と半導体素子Sの電極Tとの接続および外部接続パッド15と外部の電気回路基板の配線導体との接続ならびに検査用パッド16と電気的検査装置のプローブとの接続を良好としている。   In this wiring substrate 20, a nickel plating layer and a gold plating layer are sequentially coated by an electroless plating method on the exposed surface from the solder resist layer 13 in the semiconductor element connection pad 14, the external connection pad 15, and the inspection pad 16. May be worn. By depositing these plating layers, the oxidative corrosion of the semiconductor element connection pad 14, the external connection pad 15, and the inspection pad 16 is prevented, and the connection between the semiconductor element connection pad 14 and the electrode T of the semiconductor element S and the outside. The connection between the connection pad 15 and the wiring conductor of the external electric circuit board and the connection between the inspection pad 16 and the probe of the electrical inspection apparatus are good.

なお、ソルダーレジスト層13から露出する半導体素子接続パッド14および外部接続パッド15ならびに検査用パッド16の表面に無電解めっき法によりニッケルめっき層と金めっき層とを順次被着させるには、以下に述べる方法が採用される。   In order to sequentially deposit the nickel plating layer and the gold plating layer on the surface of the semiconductor element connection pad 14, the external connection pad 15 and the inspection pad 16 exposed from the solder resist layer 13 by electroless plating, The method described is adopted.

まず、半導体素子接続パッド14および外部接続パッド15ならびに検査用パッド16を露出させるソルダーレジスト層13が被着された配線基板20を準備する。   First, a wiring substrate 20 is prepared on which a solder resist layer 13 that exposes the semiconductor element connection pads 14, the external connection pads 15, and the inspection pads 16 is attached.

次に、この配線基板20を洗浄して半導体素子接続パッド14および外部接続パッド15ならびに検査用パッド16の露出表面の汚れや酸化膜を除去する。洗浄には、アルカリ洗浄や酸洗浄、純水洗浄等の各種洗浄が用いられる。   Next, the wiring substrate 20 is washed to remove dirt and oxide films on the exposed surfaces of the semiconductor element connection pads 14, the external connection pads 15, and the inspection pads 16. Various types of cleaning such as alkali cleaning, acid cleaning, and pure water cleaning are used for cleaning.

次に、洗浄された半導体素子接続パッド14および外部接続パッド15ならびに検査用パッド16の露出表面に無電解めっきのためのパラジウム触媒を付与する。パラジウム触媒を付与するには、パラジウム触媒溶液の中に配線基板20を所定時間浸漬した後に触媒溶液中から引き上げる方法が採用される。   Next, a palladium catalyst for electroless plating is applied to the exposed surfaces of the cleaned semiconductor element connection pads 14, external connection pads 15, and inspection pads 16. In order to apply the palladium catalyst, a method is adopted in which the wiring board 20 is immersed in the palladium catalyst solution for a predetermined time and then pulled up from the catalyst solution.

次に、触媒が付与された半導体素子接続パッド14および外部接続パッド15ならびに検査用パッド16の表面に無電解ニッケルめっき層を被着させる。無電解ニッケルめっき層を被着させるには、無電解ニッケルめっき液中に配線基板20を所定時間浸漬した後に無電解ニッケルめっき液中から引き上げる方法が採用される。   Next, an electroless nickel plating layer is deposited on the surfaces of the semiconductor element connection pad 14, the external connection pad 15, and the inspection pad 16 to which the catalyst is applied. In order to deposit the electroless nickel plating layer, a method in which the wiring board 20 is immersed in the electroless nickel plating solution for a predetermined time and then pulled up from the electroless nickel plating solution is employed.

次に、無電解ニッケルめっき層が被着された半導体素子接続パッド14および外部接続パッド15ならびに検査用パッド16の表面に無電解金めっき層を被着させる。無電解金めっき層を被着させるには、無電解金めっき液中に配線基板20を所定時間浸漬した後に無電解金めっき液中から引き上げる方法が採用される。   Next, the electroless gold plating layer is deposited on the surfaces of the semiconductor element connection pad 14, the external connection pad 15, and the inspection pad 16 to which the electroless nickel plating layer is deposited. In order to deposit the electroless gold plating layer, a method in which the wiring board 20 is immersed in the electroless gold plating solution for a predetermined time and then pulled up from the electroless gold plating solution is employed.

以上のようにして、ソルダーレジスト層13から露出する半導体素子接続パッド14および外部接続パッド15ならびに検査用パッド16の表面に無電解めっき法によりニッケルめっき層と金めっき層とが被着される。なお、パラジウム触媒溶液や無電解ニッケルめっき液、無電解金めっき液への配線基板20の浸漬は、配線基板20を垂直に立てた状態で行なわれる。したがって引上げも垂直に立てた状態で行なわれ、引上げた後は、純水洗浄の後、乾燥が行なわれる。   As described above, the nickel plating layer and the gold plating layer are deposited on the surfaces of the semiconductor element connection pad 14, the external connection pad 15, and the inspection pad 16 exposed from the solder resist layer 13 by the electroless plating method. In addition, the immersion of the wiring board 20 in a palladium catalyst solution, an electroless nickel plating solution, or an electroless gold plating solution is performed in a state where the wiring board 20 is set up vertically. Therefore, the pulling is also performed in a vertically standing state, and after the pulling, it is dried after washing with pure water.

しかしながら、近時の配線基板は、その高密度微細配線化が進んでおり、検査用パッド16においても、第1の導体パターン16aと第2の導体パターン16bとの間隔が例えば30μm以下の狭いものが出現するようになってきている。このように第1の導体パターン16aと第2の導体パターン16bとの間隔が30μm以下の狭いものである場合、第1の導体パターン16aと第2の導体パターン16bとの間の電気的な絶縁性が損なわれてしまうことがあった。   However, recent wiring boards have been developed with high density and fine wiring, and even in the test pad 16, the first conductor pattern 16a and the second conductor pattern 16b have a narrow distance of, for example, 30 μm or less. Has begun to appear. As described above, when the distance between the first conductor pattern 16a and the second conductor pattern 16b is as narrow as 30 μm or less, electrical insulation between the first conductor pattern 16a and the second conductor pattern 16b is performed. In some cases, the properties were impaired.

そこで、本発明者が詳細に観察した結果、図6に示すように、配線基板20をパラジウム触媒溶液や無電解ニッケルめっき液、無電解金めっき液中に浸漬した後に引き上げた際、第1の導体パターン16aと第2の導体パターン16bとを露出させるソルダーレジスト層13の開口部13bの下端側において、触媒溶液やめっき液が良好に排出されないまま第1の導体パターン16aと第2の導体パターン16bとの間に残渣Rとして残り、それにより第1の導体パターン16aと第2の導体パターン16bと間に微量のめっき金属層が析出してそれが電気的な絶縁性を低下させていることが分かった。   Therefore, as a result of detailed observation by the present inventor, as shown in FIG. 6, when the wiring substrate 20 is pulled up after being immersed in a palladium catalyst solution, an electroless nickel plating solution, or an electroless gold plating solution, the first On the lower end side of the opening 13b of the solder resist layer 13 that exposes the conductor pattern 16a and the second conductor pattern 16b, the first conductor pattern 16a and the second conductor pattern without the catalyst solution or the plating solution being discharged well. Residue R remains between the first conductive pattern 16a and the second conductive pattern 16b, and a small amount of plated metal layer is deposited between the first conductive pattern 16a and the second conductive pattern 16b, thereby reducing electrical insulation. I understood.

特開2011−129903号公報JP 2011-129903 A

本発明は、ソルダーレジスト層から露出する近接した導体パターン間における電気的な絶縁信頼性の高い配線基板を提供することを課題とする。   An object of the present invention is to provide a wiring board having high electrical insulation reliability between adjacent conductor patterns exposed from a solder resist layer.

本発明の配線基板は、絶縁基板と、該絶縁基板の表面に互いに隣接して形成された第1の導体パターンおよび第2の導体パターンと、前記絶縁基板の表面に被着されており、前記第1の導体パターンおよび第2の導体パターンの一部を露出させる開口部を有するとともに該開口部の開口縁が前記第1の導体パターンと第2の導体パターンとの間を横切るよに形成されたソルダーレジスト層と、前記開口部から露出する前記第1の導体パターンおよび第2の導体パターンの表面に被着された無電解めっき金属層と、を具備して成る配線基板であって、前記開口縁は、前記第1の導体パターンと第2の導体パターンとの間で前記開口部の外側または内側に向けてV字状に屈曲する屈曲部を有することを特徴とするものである。   The wiring board of the present invention is attached to the surface of the insulating substrate, the first conductor pattern and the second conductor pattern formed adjacent to each other on the surface of the insulating substrate, and the surface of the insulating substrate, An opening that exposes part of the first conductor pattern and the second conductor pattern is formed, and an opening edge of the opening crosses between the first conductor pattern and the second conductor pattern. A solder resist layer and an electroless plating metal layer deposited on the surfaces of the first conductor pattern and the second conductor pattern exposed from the opening, The opening edge has a bent portion that is bent in a V shape toward the outer side or the inner side of the opening portion between the first conductor pattern and the second conductor pattern.

本発明の配線配線によれば、互いに隣接して形成された第1の導体パターンおよび第2の導体パターンとの間を横切るソルダーレジスト層の開口縁は、第1の導体パターンと第2の導体パターンとの間でソルダーレジスト層の開口部の外側または内側に向けてV字状に屈曲する屈曲部を有することから、配線基板をパラジウム触媒溶液や無電解ニッケルめっき液、無電解金めっき液に浸漬した後に引き上げた際、触媒溶液やめっき液が屈曲部を伝って第1の導体パターンと第2の導体パターンとの間から良好に排出される。したがって、第1の導体パターンと第2の導体パターンとの間に触媒溶液やめっき液の残渣に起因して微量なめっき金属層が析出することはなく、両者間における電気的な絶縁信頼性の高い配線基板を提供することができる。   According to the wiring wiring of the present invention, the opening edge of the solder resist layer that crosses between the first conductor pattern and the second conductor pattern formed adjacent to each other is formed between the first conductor pattern and the second conductor. Since it has a bent part that bends in a V shape toward the outside or inside of the opening of the solder resist layer between the pattern and the pattern, the wiring board is made into a palladium catalyst solution, an electroless nickel plating solution, or an electroless gold plating solution. When it is pulled up after being immersed, the catalyst solution and the plating solution are well discharged from between the first conductor pattern and the second conductor pattern along the bent portion. Therefore, a trace amount of the plated metal layer is not deposited between the first conductor pattern and the second conductor pattern due to the residue of the catalyst solution or the plating solution, and the electrical insulation reliability between the two is not increased. A high wiring board can be provided.

図1は、本発明の配線基板における実施形態の一例を示す断面図および上面図である。FIG. 1 is a cross-sectional view and a top view showing an example of an embodiment of a wiring board according to the present invention. 図2は、図1に示す配線基板の要部拡大図である。FIG. 2 is an enlarged view of a main part of the wiring board shown in FIG. 図3は、本発明の配線基板における実施形態の他の例を示す断面図および上面図である。FIG. 3 is a cross-sectional view and a top view showing another example of the embodiment of the wiring board of the present invention. 図4は、図3に示す配線基板の要部拡大図である。FIG. 4 is an enlarged view of a main part of the wiring board shown in FIG. 図5は、従来の配線基板の断面図および上面図である。FIG. 5 is a cross-sectional view and a top view of a conventional wiring board. 図6は、図5に示す配線基板の要部拡大図である。FIG. 6 is an enlarged view of a main part of the wiring board shown in FIG.

次に、本発明の配線基板の実施形態の一例を添付の図を参照して説明する。図1に示すように、本例の配線基板10は、主として絶縁基板1と配線導体2とソルダーレジスト層3とを具備している。   Next, an example of an embodiment of the wiring board of the present invention will be described with reference to the accompanying drawings. As shown in FIG. 1, the wiring substrate 10 of this example mainly includes an insulating substrate 1, a wiring conductor 2, and a solder resist layer 3.

絶縁基板1は、略四角形状の平板であり、樹脂系絶縁材料からなる。樹脂系絶縁材料としては、例えばガラスクロスにエポキシ樹脂やビスマレイミドトリアジン樹脂等の熱硬化性樹脂を含浸させた絶縁材料や、エポキシ樹脂等の熱硬化性樹脂中に酸化ケイ素粉末等の無機絶縁フィラーを分散させた絶縁材料が好適に用いられる。   The insulating substrate 1 is a substantially rectangular flat plate and is made of a resin-based insulating material. Examples of the resin insulating material include an insulating material obtained by impregnating a glass cloth with a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin, or an inorganic insulating filler such as a silicon oxide powder in a thermosetting resin such as an epoxy resin. An insulating material in which is dispersed is preferably used.

絶縁基板1の上面中央部には半導体素子Sを搭載するための搭載部1aが形成されている。また、絶縁基板1の下面は、外部の電気回路基板と接続するための外部接続面となっている。   A mounting portion 1 a for mounting the semiconductor element S is formed at the center of the upper surface of the insulating substrate 1. The lower surface of the insulating substrate 1 serves as an external connection surface for connection to an external electric circuit substrate.

配線導体2は、厚みが10〜20μm程度の銅箔や銅めっき層からなり、絶縁基板1の上面から下面にかけて被着されている。配線導体2の一部は、絶縁基板1の搭載部1a上に露出して複数の半導体素子接続パッド4を形成している。半導体素子接続パッド4は、例えば直径が50〜100μm程度の円形である。半導体素子接続パッド4には、半導体素子Sの電極Tが接続される。また、配線導体2の別の一部は、絶縁基板1の下面に露出して複数の外部接続パッド5を形成している。外部接続パッド5は、例えば直径が300〜1000μm程度の円形である。外部接続パッド5は、外部の電気回路基板の配線導体に接続される。なお、これらの半導体素子接続パッド4と外部接続パッド5とは、それぞれ対応するもの同士が絶縁基板1の内部に配設された配線導体2を介して互いに電気的に接続されている。   The wiring conductor 2 is made of a copper foil or a copper plating layer having a thickness of about 10 to 20 μm, and is attached from the upper surface to the lower surface of the insulating substrate 1. A part of the wiring conductor 2 is exposed on the mounting portion 1 a of the insulating substrate 1 to form a plurality of semiconductor element connection pads 4. The semiconductor element connection pad 4 is, for example, a circle having a diameter of about 50 to 100 μm. The electrode T of the semiconductor element S is connected to the semiconductor element connection pad 4. Another part of the wiring conductor 2 is exposed on the lower surface of the insulating substrate 1 to form a plurality of external connection pads 5. The external connection pad 5 has a circular shape with a diameter of about 300 to 1000 μm, for example. The external connection pad 5 is connected to a wiring conductor of an external electric circuit board. Note that these semiconductor element connection pads 4 and external connection pads 5 are electrically connected to each other via wiring conductors 2 disposed inside the insulating substrate 1.

さらに、絶縁基板1の上面外周部には、配線導体2の一部からなる検査用パッド6が配設されている。検査用パッド6は、互いに対となって配置された第1の導体パターン6aと第2の導体パターン6bとを有している。これらの第1の導体パターン6aおよび第2の導体パターン6bは、それぞれが特定の半導体素子接続パッド4に電気的に接続されている。なお第1の導体パターン6aおよび第2の導体パターン6bはそれぞれの幅が20〜50μm程度であり、互いに20〜30μm程度の間隔をあけて配置されている。そして、半導体素子接続パッド4に半導体素子Sの電極Tを接続した後、検査用パッド6に電気的検査装置のプローブを接続して測定することにより、半導体素子Sの動作の状態を確認することができる。   Further, an inspection pad 6 made of a part of the wiring conductor 2 is disposed on the outer peripheral portion of the upper surface of the insulating substrate 1. The inspection pad 6 has a first conductor pattern 6a and a second conductor pattern 6b arranged in pairs. Each of the first conductor pattern 6 a and the second conductor pattern 6 b is electrically connected to a specific semiconductor element connection pad 4. The first conductor pattern 6a and the second conductor pattern 6b have a width of about 20 to 50 μm, and are arranged with an interval of about 20 to 30 μm. Then, after the electrode T of the semiconductor element S is connected to the semiconductor element connection pad 4, the operation state of the semiconductor element S is confirmed by connecting and measuring the probe of the electrical inspection apparatus to the inspection pad 6. Can do.

ソルダーレジスト層3は、絶縁基板1の上下面に被着されている。そして上面側のソルダーレジスト層3は、半導体素子接続パッド4を個別に露出させる開口部3aと検査用パッド6の第1の導体パターン6aおよび第2の導体パターン6bの対を一括して露出させる開口部3bとを有している。下面側のソルダーレジスト層3は、外部接続パッド5を個別に露出させる開口部3cを有している。このようなソルダーレジスト層3は、厚みが10〜30μm程度の樹脂系の電気絶縁材料からなる。ソルダーレジスト層3を形成する樹脂系の電気絶縁材料としては、例えばアクリル変性エポキシ樹脂等の感光性を有する熱硬化性樹脂を硬化させた材料が好適に用いられる。   The solder resist layer 3 is applied to the upper and lower surfaces of the insulating substrate 1. The solder resist layer 3 on the upper surface side exposes a pair of the first conductor pattern 6a and the second conductor pattern 6b of the opening 3a for individually exposing the semiconductor element connection pads 4 and the test pad 6. And an opening 3b. The solder resist layer 3 on the lower surface side has an opening 3c for exposing the external connection pads 5 individually. Such a solder resist layer 3 is made of a resin-based electrically insulating material having a thickness of about 10 to 30 μm. As the resin-based electrical insulating material for forming the solder resist layer 3, for example, a material obtained by curing a thermosetting resin having photosensitivity such as an acrylic-modified epoxy resin is preferably used.

ソルダーレジスト層3から露出する半導体素子接続パッド4および外部接続パッド5ならびに検査用パッド6の表面には、図示しない無電解ニッケルめっき層と無電解金めっき層とが順次被着されている。無電解ニッケルめっき層の厚みは0.1〜3μm程度である。また無電解金めっき層の厚みは、0.02〜0.2μm程度である。これらのめっき層を被着させることにより、半導体素子接続パッド4および外部接続パッド5ならびに検査用パッド6の酸化腐食を防止するとともに半導体素子接続パッド4と半導体素子Sの電極Tとの接続および外部接続パッド5と外部の電気回路基板の配線導体との接続ならびに検査用パッド6と電気的検査装置のプローブとの接続を良好としている。   An electroless nickel plating layer and an electroless gold plating layer (not shown) are sequentially deposited on the surfaces of the semiconductor element connection pad 4, the external connection pad 5, and the inspection pad 6 exposed from the solder resist layer 3. The thickness of the electroless nickel plating layer is about 0.1 to 3 μm. The thickness of the electroless gold plating layer is about 0.02 to 0.2 μm. By depositing these plating layers, the oxidative corrosion of the semiconductor element connection pad 4, the external connection pad 5, and the inspection pad 6 is prevented, and the connection between the semiconductor element connection pad 4 and the electrode T of the semiconductor element S and the outside. The connection between the connection pad 5 and the wiring conductor of the external electric circuit board and the connection between the inspection pad 6 and the probe of the electrical inspection apparatus are good.

なお、ソルダーレジスト層3から露出する半導体素子接続パッド4および外部接続パッド5ならびに検査用パッド6の表面に無電解ニッケルめっき層と無電解金めっき層とを被着させるには、従来と同様の方法が採用される。   In order to deposit the electroless nickel plating layer and the electroless gold plating layer on the surfaces of the semiconductor element connection pad 4, the external connection pad 5, and the inspection pad 6 exposed from the solder resist layer 3, it is the same as the conventional method. The method is adopted.

即ち、まず、半導体素子接続パッド4および外部接続パッド5ならびに検査用パッド6を露出させるソルダーレジスト層3が被着された配線基10を準備する。   That is, first, a wiring base 10 is prepared on which a solder resist layer 3 for exposing the semiconductor element connection pads 4, the external connection pads 5, and the inspection pads 6 is applied.

次に、この配線基板10を洗浄して半導体素子接続パッド4および外部接続パッド5ならびに検査用パッド6の露出表面の汚れや酸化膜を除去する。洗浄には、アルカリ洗浄や酸洗浄、純水洗浄等の各種洗浄が用いられる。   Next, the wiring substrate 10 is washed to remove the dirt and oxide film on the exposed surfaces of the semiconductor element connection pads 4, the external connection pads 5, and the test pads 6. Various types of cleaning such as alkali cleaning, acid cleaning, and pure water cleaning are used for cleaning.

次に、洗浄された半導体素子接続パッド4および外部接続パッド5ならびに検査用パッド6の露出表面に無電解めっきのためのパラジウム触媒を付与する。パラジウム触媒を付与するには、パラジウム触媒溶液の中に配線基板10を所定時間浸漬した後に触媒溶液中から引き上げる方法が採用される。   Next, a palladium catalyst for electroless plating is applied to the exposed surfaces of the cleaned semiconductor element connection pads 4, external connection pads 5, and inspection pads 6. In order to apply the palladium catalyst, a method is adopted in which the wiring substrate 10 is immersed in the palladium catalyst solution for a predetermined time and then pulled up from the catalyst solution.

次に、触媒が付与された半導体素子接続パッド4および外部接続パッド5ならびに検査用パッド6の表面に無電解ニッケルめっき層を被着させる。無電解ニッケルめっき層を被着させるには、無電解ニッケルめっき液中に配線基板10を所定時間浸漬した後に無電解ニッケルめっき液中から引き上げる方法が採用される。   Next, an electroless nickel plating layer is deposited on the surfaces of the semiconductor element connection pad 4, the external connection pad 5 and the inspection pad 6 to which the catalyst is applied. In order to deposit the electroless nickel plating layer, a method in which the wiring substrate 10 is immersed in the electroless nickel plating solution for a predetermined time and then pulled up from the electroless nickel plating solution is employed.

次に、無電解ニッケルめっき層が被着された半導体素子接続パッド4および外部接続パッド5ならびに検査用パッド6の表面に無電解金めっき層を被着させる。無電解金めっき層を被着させるには、無電解金めっき液中に配線基板10を所定時間浸漬した後に無電解金めっき液中から引き上げる方法が採用される。   Next, the electroless gold plating layer is deposited on the surfaces of the semiconductor element connection pad 4, the external connection pad 5 and the inspection pad 6 to which the electroless nickel plating layer is deposited. In order to deposit the electroless gold plating layer, a method in which the wiring substrate 10 is immersed in the electroless gold plating solution for a predetermined time and then pulled up from the electroless gold plating solution is employed.

以上のようにして、ソルダーレジスト層3から露出する半導体素子接続パッド4および外部接続パッド5ならびに検査用パッド6の表面に無電解ニッケルめっき層と無電解金めっき層とが被着される。なお、パラジウム触媒溶液や無電解ニッケルめっき液、無電解金めっき液への配線基板10の浸漬は、配線基板10を垂直に立てた状態で行なわれる。したがって引上げも垂直に立てた状態で行なわれ、引上げた後は、純水洗浄の後、乾燥が行なわれる。   As described above, the electroless nickel plating layer and the electroless gold plating layer are deposited on the surfaces of the semiconductor element connection pad 4, the external connection pad 5, and the inspection pad 6 exposed from the solder resist layer 3. In addition, the immersion of the wiring board 10 in a palladium catalyst solution, an electroless nickel plating solution, or an electroless gold plating solution is performed in a state where the wiring substrate 10 is set up vertically. Therefore, the pulling is also performed in a vertically standing state, and after the pulling, it is dried after washing with pure water.

ところで本例の配線基板10においては、検査用パッド6を露出させるソルダーレジスト3の開口部3bの開口縁が第1の導体パターン6aと第2の導体パターン6bとの間を横切る位置に開口部3bの外側に向けてV字状に屈曲する屈曲部Aが形成されている。このように、開口部3bの開口縁が第1の導体パターン6aと第2の導体パターン6bとの間に開口部3bの外側に向けてV字状に屈曲する屈曲部Aを有することら、図2に示すように、配線基板10をパラジウム触媒溶液や無電解ニッケルめっき液、無電解金めっき液中に浸漬した後に引き上げた際、第1の導体パターン6aと第2の導体パターン6bとを露出させるソルダーレジスト層3の開口部3bの下端側において、触媒溶液やめっき液が屈曲部Aを伝って第1の導体パターン6aと第2の導体パターン6bとの間から排出される。したがって、第1の導体パターン6aと第2の導体パターン6bとの間に触媒溶液やめっき液の残渣Rに起因して微量なめっき金属層が析出することはなく、両者間における電気的な絶縁信頼性の高い配線基板10を提供することができる。   By the way, in the wiring board 10 of the present example, the opening portion is located at a position where the opening edge of the opening portion 3b of the solder resist 3 exposing the inspection pad 6 crosses between the first conductor pattern 6a and the second conductor pattern 6b. A bent portion A that is bent in a V shape toward the outside of 3b is formed. Thus, the opening edge of the opening 3b has a bent portion A that bends in a V shape toward the outside of the opening 3b between the first conductor pattern 6a and the second conductor pattern 6b. As shown in FIG. 2, when the wiring substrate 10 is dipped in a palladium catalyst solution, an electroless nickel plating solution, or an electroless gold plating solution and then pulled up, the first conductor pattern 6a and the second conductor pattern 6b are On the lower end side of the opening 3b of the solder resist layer 3 to be exposed, the catalyst solution or the plating solution is discharged from between the first conductor pattern 6a and the second conductor pattern 6b through the bent portion A. Therefore, a trace amount of the plated metal layer does not deposit between the first conductor pattern 6a and the second conductor pattern 6b due to the residue R of the catalyst solution or the plating solution, and electrical insulation between the two. A highly reliable wiring board 10 can be provided.

なお、V字状に屈曲する屈曲部Aは、その幅Wが15μm未満では屈曲部Aを良好な形状で形成することが困難となる傾向にあり、50μmを超えると第1の導体パターン6aや第2の導体パターン6bが屈曲部A内に露出する面積が大きくなり、第1の導体パターン6aや第2の導体パターン6bの露出形状が歪なものとなる。したがって、屈曲部Aの幅Wは15〜50μmの範囲が好ましい。また屈曲部Aは、その深さDが15μm未満では第1の導体パターン6aと第2の導体パターン6bとの間の電気的な絶縁信頼性を十分に確保することが困難となり、50μmを超えると屈曲部Aの深さDが不要に深くなってしまう。したがって、屈曲部Aの深さDは、15〜50μmの範囲が好ましい。さらに屈曲部Aは、その角度θが30度未満では屈曲部Aを良好な形状で形成することが困難となり、角度θが90度を超えると、第1の導体パターン6aと第2の導体パターン6bとの間の電気的な絶縁信頼性を十分に確保することが困難となる。したがって、屈曲部Aの角度θは30〜60度の範囲が好ましい。   The bent portion A bent in a V shape tends to have difficulty in forming the bent portion A in a good shape if the width W is less than 15 μm, and if the width W exceeds 50 μm, the first conductor pattern 6a or The area where the second conductor pattern 6b is exposed in the bent portion A is increased, and the exposed shapes of the first conductor pattern 6a and the second conductor pattern 6b are distorted. Therefore, the width W of the bent portion A is preferably in the range of 15 to 50 μm. Further, when the depth D of the bent portion A is less than 15 μm, it is difficult to ensure sufficient electrical insulation reliability between the first conductor pattern 6a and the second conductor pattern 6b, and exceeds 50 μm. And the depth D of the bent part A becomes unnecessarily deep. Therefore, the depth D of the bent portion A is preferably in the range of 15 to 50 μm. Further, it is difficult for the bent portion A to form the bent portion A in a good shape when the angle θ is less than 30 degrees, and when the angle θ exceeds 90 degrees, the first conductor pattern 6a and the second conductor pattern are formed. It becomes difficult to ensure sufficient electrical insulation reliability with 6b. Therefore, the angle θ of the bent portion A is preferably in the range of 30 to 60 degrees.

なお本発明は、上述した実施形態の一例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更が可能であることは言うまでもない。例えば上述した実施形態の一例では、開口部3bの開口縁が第1の導体パターン6aと第2の導体パターン6bとの間に開口部3bの外側に向けてV字状に屈曲する屈曲部Aを有していたが、図3に示すように、開口部3bの開口縁が第1の導体パターン6aと第2の導体パターン6bとの間に開口部3bの内側に向けてV字状に屈曲する屈曲部Bを有していてもよい。なお、図3および図4において図1および図2で示した箇所と同じ箇所には同じ符号を付し、その詳細な説明は省略する。この場合も、図4に示すように、配線基板10をパラジウム触媒溶液や無電解ニッケルめっき液、無電解金めっき液中に浸漬した後に引き上げた際、第1の導体パターン6aと第2の導体パターン6bとを露出させるソルダーレジスト層3の開口部3bの下端側において、触媒溶液やめっき液が屈曲部Bを伝って第1の導体パターン6aと第2の導体パターン6bとの間から排出される。したがって、第1の導体パターン6aと第2の導体パターン6bとの間に触媒溶液やめっき液の残渣Rに起因して微量なめっき金属層が析出することはなく、両者間における電気的な絶縁信頼性の高い配線基板10を提供することができる。   In addition, this invention is not limited to an example of embodiment mentioned above, It cannot be overemphasized that a various change is possible if it is the range which does not deviate from the summary of this invention. For example, in the example of the embodiment described above, the bent portion A in which the opening edge of the opening 3b is bent in a V shape toward the outside of the opening 3b between the first conductor pattern 6a and the second conductor pattern 6b. However, as shown in FIG. 3, the opening edge of the opening 3b is V-shaped toward the inside of the opening 3b between the first conductor pattern 6a and the second conductor pattern 6b. You may have the bending part B which bends. 3 and 4, the same parts as those shown in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof is omitted. Also in this case, as shown in FIG. 4, when the wiring board 10 is dipped in a palladium catalyst solution, an electroless nickel plating solution, or an electroless gold plating solution and then pulled up, the first conductor pattern 6a and the second conductor On the lower end side of the opening 3b of the solder resist layer 3 exposing the pattern 6b, the catalyst solution or the plating solution is discharged from between the first conductor pattern 6a and the second conductor pattern 6b through the bent portion B. The Therefore, a trace amount of the plated metal layer does not deposit between the first conductor pattern 6a and the second conductor pattern 6b due to the residue R of the catalyst solution or the plating solution, and electrical insulation between the two. A highly reliable wiring board 10 can be provided.

なお、V字状に屈曲する屈曲部Bは、その幅Wが20μm未満では第1の導体パターン6aと第2の導体パターン6bとの間の電気的な絶縁信頼性を十分に確保することが困難となり、50μmを超えると、第1の導体パターン6aや第2の導体パターン6bに覆いかぶさる面積が大きくなり、第1の導体パターン6aや第2の導体パターン6bの露出形状が歪なものとなる。したがって、屈曲部Bの幅Wは20〜50μmの範囲が好ましい。また屈曲部Bは、その高さHが10μm未満では第1の導体パターン6aと第2の導体パターン6bとの間の電気的な絶縁信頼性を十分に確保することが困難となり、50μmを超えると屈曲部Bの高さHが不要に高くなってしまう。したがって、屈曲部Bの高さHは、10〜50μmの範囲が好ましい。さらに屈曲部Bは、その角度θが30度未満では屈曲部Bを良好な形状で形成することが困難となる傾向にあり、角度θが120度を超えると、第1の導体パターン6aと第2の導体パターン6bとの間の電気的な絶縁信頼性を十分に確保することが困難となる。したがって、屈曲部Bの角度θは30〜120度の範囲が好ましい。   The bent portion B bent in a V-shape can sufficiently secure the electrical insulation reliability between the first conductor pattern 6a and the second conductor pattern 6b when the width W is less than 20 μm. When it exceeds 50 μm, the area covering the first conductor pattern 6a and the second conductor pattern 6b increases, and the exposed shape of the first conductor pattern 6a and the second conductor pattern 6b is distorted. Become. Therefore, the width W of the bent portion B is preferably in the range of 20 to 50 μm. Further, if the height H of the bent portion B is less than 10 μm, it is difficult to ensure sufficient electrical insulation reliability between the first conductor pattern 6a and the second conductor pattern 6b, and exceeds 50 μm. And the height H of the bent portion B becomes unnecessarily high. Therefore, the height H of the bent portion B is preferably in the range of 10 to 50 μm. Further, when the angle θ is less than 30 degrees, the bent portion B tends to be difficult to form the bent portion B in a good shape, and when the angle θ exceeds 120 degrees, the first conductor pattern 6a and the first conductor pattern 6a It becomes difficult to ensure sufficient electrical insulation reliability between the two conductor patterns 6b. Therefore, the angle θ of the bent portion B is preferably in the range of 30 to 120 degrees.

1 絶縁基板
2 配線導体
3 ソルダーレジスト層
3b 開口部
6a 第1の導体パターン
6b 第2の導体パターン
10 配線基板
A,B 屈曲部
DESCRIPTION OF SYMBOLS 1 Insulating board 2 Wiring conductor 3 Solder resist layer 3b Opening part 6a 1st conductor pattern 6b 2nd conductor pattern 10 Wiring board A, B Bending part

Claims (1)

絶縁基板と、該絶縁基板の表面に互いに隣接して形成された第1の導体パターンおよび第2の導体パターンと、前記絶縁基板の表面に被着されており、前記第1の導体パターンおよび第2の導体パターンの一部を露出させる開口部を有するとともに該開口部の開口縁が前記第1の導体パターンと第2の導体パターンとの間を横切るよに形成されたソルダーレジスト層と、前記開口部から露出する前記第1の導体パターンおよび第2の導体パターンの表面に被着された無電解めっき金属層と、を具備して成る配線基板であって、前記開口縁は、前記第1の導体パターンと第2の導体パターンとの間で前記開口部の外側または内側に向けてV字状に屈曲する屈曲部を有することを特徴とする配線基板。   An insulating substrate; a first conductor pattern and a second conductor pattern formed adjacent to each other on a surface of the insulating substrate; and a surface of the insulating substrate, the first conductor pattern and the first conductor pattern A solder resist layer that has an opening that exposes a part of the two conductor patterns and an opening edge of the opening crosses between the first conductor pattern and the second conductor pattern; An electroless plating metal layer deposited on the surfaces of the first conductor pattern and the second conductor pattern exposed from the opening, wherein the opening edge has the first edge A wiring board having a bent portion bent in a V shape toward the outer side or the inner side of the opening between the conductive pattern and the second conductive pattern.
JP2011280013A 2011-12-21 2011-12-21 Wiring board Pending JP2013131626A (en)

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