JP2013128116A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP2013128116A JP2013128116A JP2012273222A JP2012273222A JP2013128116A JP 2013128116 A JP2013128116 A JP 2013128116A JP 2012273222 A JP2012273222 A JP 2012273222A JP 2012273222 A JP2012273222 A JP 2012273222A JP 2013128116 A JP2013128116 A JP 2013128116A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 110
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 110
- 239000010703 silicon Substances 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims abstract description 27
- 238000005520 cutting process Methods 0.000 claims abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 150
- 239000002041 carbon nanotube Substances 0.000 claims description 146
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 144
- 239000011159 matrix material Substances 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 230000000694 effects Effects 0.000 description 16
- 239000003054 catalyst Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 239000004020 conductor Substances 0.000 description 12
- 239000007769 metal material Substances 0.000 description 12
- 239000004332 silver Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000002923 metal particle Substances 0.000 description 11
- 229910052709 silver Inorganic materials 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000002131 composite material Substances 0.000 description 10
- 238000001755 magnetron sputter deposition Methods 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 9
- 238000001771 vacuum deposition Methods 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 238000003491 array Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- -1 ITO Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000012782 phase change material Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 230000008094 contradictory effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910021404 metallic carbon Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002079 double walled nanotube Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 229910000498 pewter Inorganic materials 0.000 description 1
- 239000010957 pewter Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000002109 single walled nanotube Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】本発明の太陽電池の製造方法は、M個のpn接合ユニットの予備体を提供し、一つのpn接合ユニットの予備体が、互いに接触する第一シリコン基板と第二シリコン基板を含む第一ステップと、隣接する二つのpn接合ユニットの予備体の間に内部電極を設置して、M個のpn接合ユニットの構造体を形成する第二ステップと、M個のpn接合ユニットの構造体を、一つの直線に沿って順次に並列し且つ接触させて、一つの一体整列構造を形成する第三ステップと、前記一体整列構造の対向する両側に、それぞれ第一集電極基板と第二集電極基板とを設置し、太陽電池の母体を形成する第四ステップと、太陽電池の母体を切断して受光面を有する複数の太陽電池を形成する第五ステップと、を含む。
【選択図】図5
Description
図1及び図2を参照すると、本発明の実施例1は太陽電池10を提供する。該太陽電池10はM個のpn接合ユニット12と、M−1個の内部電極14と、第一集電極16と、第二集電極18と、を含む。Mは自然数であり、且つ下記の式(1)を満たす。
M≧2 (1)
図5を参照すると、本発明の実施例2は太陽電池10の製造方法を提供し、該製造方法は以下のステップを含む。
本発明の実施例3は、太陽電池10の製造方法を提供し、該製造方法は、以下のステップを含む。
11 光出射面
12 pn接合ユニット
13 透明絶縁層
14 内部電極
15 反射素子
16 第一集電極
17 受光面
18 第二集電極
19 反射防止層
120 pn接合ユニットの予備体
121 第一表面
122 第一シリコン層
123 第二表面
125 接触面
126 第二シリコン層
130 pn接合ユニットの構造体
140 カーボンナノチューブアレイ
142 金属層
160 第一集電極基板
180 第二集電極基板
1220 第一シリコン基板
1260 第二シリコン基板
Claims (4)
- M個のpn接合ユニットの予備体を提供し、前記一つのpn接合ユニットの予備体が、互いに接触する第一シリコン基板と第二シリコン基板を含む第一ステップと、
前記Mは自然数であり、且つ
M≧2
という条件を満し、
前記隣接する二つのpn接合ユニットの予備体の間に内部電極を設置して、M個のpn接合ユニットの構造体を形成する第二ステップと、
前記M個のpn接合ユニットの構造体を、一つの直線に沿って順次に並列し且つ接触させて、一つの一体整列構造を形成する第三ステップと、
前記一体整列構造の対向する両側に、それぞれ第一集電極基板と第二集電極基板とを設置し、太陽電池の母体を形成する第四ステップと、
前記太陽電池の母体を切断して受光面を有する複数の太陽電池を形成する第五ステップと、
を含むことを特徴とする太陽電池の製造方法。 - M個のpn接合ユニットの予備体を提供し、前記一つのpn接合ユニットの予備体は、互いに接触する第一シリコン基板と第二シリコン基板を含む第一ステップと、
前記Mは自然数であり、且つ
M≧2
という条件を満し、
前記M個のpn接合ユニットの予備体を、一つの直線に沿って順次に並列し且つ接触させる第二ステップと、
前記隣接する二つのpn接合ユニットの予備体の間に内部電極を設置し、一つの一体整列構造を形成する第三ステップと、
前記一体整列構造の対向する両側に、それぞれ第一集電極基板と第二集電極基板とが設置し、太陽電池の母体を形成する第四ステップと、
前記太陽電池の母体を切断して受光面を有する複数の太陽電池を形成する第五ステップと、
を含むことを特徴とする太陽電池の製造方法。 - 前記内部電極によって、隣接する二つのpn接合ユニットの予備体を直列接続し、
前記内部電極はカーボンナノチューブアレイからなり、該前記カーボンナノチューブアレイが互いに平行する複数のカーボンナノチューブからなることを特徴とする、請求項1又は請求項2に記載の太陽電池の製造方法。 - 前記直線と平行する方向に、前記太陽電池の母体を切断して受光面を有する複数の太陽電池を形成することを特徴とする、請求項1又は請求項2に記載の太陽電池の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110421935.3A CN103165742B (zh) | 2011-12-16 | 2011-12-16 | 太阳能电池的制备方法 |
CN201110421935.3 | 2011-12-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013128116A true JP2013128116A (ja) | 2013-06-27 |
JP5596114B2 JP5596114B2 (ja) | 2014-09-24 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2012273222A Active JP5596114B2 (ja) | 2011-12-16 | 2012-12-14 | 太陽電池 |
Country Status (4)
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US (1) | US8497154B2 (ja) |
JP (1) | JP5596114B2 (ja) |
CN (1) | CN103165742B (ja) |
TW (1) | TWI481056B (ja) |
Cited By (1)
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WO2016136275A1 (ja) * | 2015-02-27 | 2016-09-01 | 日本ゼオン株式会社 | シリコーンゴム組成物および加硫物 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011049933A1 (en) | 2009-10-19 | 2011-04-28 | The University Of Toledo | Back contact buffer layer for thin-film solar cells |
US20160005906A1 (en) * | 2014-07-03 | 2016-01-07 | MH Solar Co. LTD. | Optoelectronic Thermal Interfaces for 3-Dimensional Billet Devices, Including Vertical Multijunction Photovoltaic Receivers Using Heat Sinked Anode/Billet/Cathode For High Intensity Beaming and Wireless Power Transmission |
CN107564946A (zh) * | 2016-07-01 | 2018-01-09 | 清华大学 | 纳米晶体管 |
CN107564947A (zh) * | 2016-07-01 | 2018-01-09 | 清华大学 | 纳米异质结构 |
FR3054725B1 (fr) * | 2016-07-26 | 2019-05-17 | Institut Polytechnique De Grenoble | Dispositif optoelectronique et son procede de fabrication |
CN108933172B (zh) * | 2017-05-24 | 2020-05-15 | 清华大学 | 半导体元件 |
CN109428009B (zh) * | 2017-08-30 | 2020-05-15 | 清华大学 | 有机发光二极管的制备方法 |
CN109427984B (zh) * | 2017-08-30 | 2020-01-07 | 清华大学 | 有机发光二极管的制备方法 |
CN109473490A (zh) * | 2018-11-08 | 2019-03-15 | 天津理工大学 | 一种垂直多结结构二硫化钼太阳能电池及其制备方法 |
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US4409422A (en) * | 1974-11-08 | 1983-10-11 | Sater Bernard L | High intensity solar cell |
JP2000197387A (ja) * | 1998-12-23 | 2000-07-14 | Mannesmann Vdo Ag | 同期モ―タの回転数監視方法および監視装置 |
WO2010019685A1 (en) * | 2008-08-14 | 2010-02-18 | Greenfield Solar Corp. | Photovoltaic cells with processed surfaces and related applications |
WO2010137449A1 (ja) * | 2009-05-25 | 2010-12-02 | コニカミノルタホールディングス株式会社 | 有機光電変換素子、それを用いた太陽電池及び光センサアレイ |
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CN103165742A (zh) | 2013-06-19 |
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US20130157402A1 (en) | 2013-06-20 |
US8497154B2 (en) | 2013-07-30 |
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