JP2013124217A5 - - Google Patents
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- Publication number
- JP2013124217A5 JP2013124217A5 JP2012270433A JP2012270433A JP2013124217A5 JP 2013124217 A5 JP2013124217 A5 JP 2013124217A5 JP 2012270433 A JP2012270433 A JP 2012270433A JP 2012270433 A JP2012270433 A JP 2012270433A JP 2013124217 A5 JP2013124217 A5 JP 2013124217A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride crystal
- reaction vessel
- nitride
- raw material
- regeneration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 12
- 239000002994 raw material Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 7
- 230000008929 regeneration Effects 0.000 claims 7
- 238000011069 regeneration method Methods 0.000 claims 7
- 239000000463 material Substances 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 239000006227 byproduct Substances 0.000 claims 2
- 150000004767 nitrides Chemical group 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 1
Claims (6)
ことを特徴とする、再生原料の製造方法。 After crystal growth by the ammonothermal method using the first nitride crystal as a raw material in the reaction vessel, the first nitride crystal remaining in the reaction vessel is subjected to a regeneration treatment to obtain an ammonothermal method. A method for producing a recycled material, characterized in that a recycled material that is a nitride crystal material for use is obtained .
ことを特徴とする、再生原料の製造方法。A method for producing a recycled raw material.
ことを特徴とする、再生原料の製造方法。A method for producing a recycled raw material.
Wherein the step of obtaining a reclaimed by manufacturing method according to any one of claims 1-5, growing a third nitride crystal by the ammonothermal method using a raw material containing regeneration material A method for producing a nitride crystal.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201113569964A | 2011-12-13 | 2011-12-13 | |
| US61/569964 | 2011-12-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013124217A JP2013124217A (en) | 2013-06-24 |
| JP2013124217A5 true JP2013124217A5 (en) | 2016-01-21 |
Family
ID=48775697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012270433A Pending JP2013124217A (en) | 2011-12-13 | 2012-12-11 | Method for producing regenerated raw material, method for producing nitride crystal and nitride crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2013124217A (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007008198A1 (en) * | 2005-07-08 | 2007-01-18 | The Regents Of The University Of California | Method for growing group iii-nitride crystals in supercritical ammonia using an autoclave |
| JP5493302B2 (en) * | 2007-07-19 | 2014-05-14 | 三菱化学株式会社 | Group III nitride semiconductor substrate and cleaning method thereof |
| KR20120127397A (en) * | 2009-11-27 | 2012-11-21 | 미쓰비시 가가꾸 가부시키가이샤 | Method for producing nitride crystals, and production vessel and members |
-
2012
- 2012-12-11 JP JP2012270433A patent/JP2013124217A/en active Pending
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