JP2013115322A - Semiconductor package module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technology of downsizing an installation area of a semiconductor package module.SOLUTION: A semiconductor package module 1 comprises: a flat first package 210 housing a semiconductor element; a flat second package 210 housing a semiconductor element; and a case body 100 housing the first and second packages arranged such that principal surfaces of the first and second packages face each other.

Description

  The present invention relates to a semiconductor package module.

  Conventionally, a semiconductor package module including a plurality of semiconductor packages, such as a semiconductor package module including a switching element for an inverter, is known. For example, Patent Document 1 includes a package in which a semiconductor element and lead terminals connected to the semiconductor element are sealed, and a case made of a frame body provided with external terminals. Is disclosed, and a semiconductor device (semiconductor package module) in which a lead terminal and an external terminal are connected is disclosed.

Japanese Patent Laid-Open No. 2003-10077

  In the semiconductor package module of Patent Document 1 described above, a plurality of flat packages are arranged so that the side surfaces of adjacent packages face each other, that is, the main surface of each package is positioned on the same plane. Arranged and housed in the frame of the case. Therefore, the conventional semiconductor package module has a problem that the installation area is large.

  The present invention has been made in view of these problems, and an object thereof is to provide a technique for reducing the installation area of a semiconductor package module.

  One embodiment of the present invention is a semiconductor package module. The semiconductor package module is a case in which a flat first package containing a semiconductor element and a flat second package containing a semiconductor element are arranged so that their main surfaces face each other. It is housed in the body.

  According to the present invention, the installation area of the semiconductor package module can be reduced.

1 is a schematic perspective view illustrating an appearance of a semiconductor device according to a first embodiment. It is a disassembled perspective view which shows schematic structure of a semiconductor device. It is a schematic perspective view of a package laminated body. It is a top view of a semiconductor package module. FIG. 5A is a schematic cross-sectional view of the package along a plane parallel to the main surface of the package. FIG. 5B is a schematic cross-sectional view taken along the line AA in FIG. FIG. 6A is a schematic cross-sectional view of the vicinity of the connection portion between the control IC and the control terminal. FIG. 6B is a schematic plan view of the vicinity of the connection portion between the control IC and the control terminal. FIG. 7A to FIG. 7D are process schematic diagrams for explaining the manufacturing process of the semiconductor package module. FIG. 8A and FIG. 8B are process schematic diagrams for explaining the manufacturing process of the semiconductor package module. FIG. 9A and FIG. 9B are process schematic diagrams for explaining the manufacturing process of the semiconductor package module. FIG. 10A and FIG. 10B are process schematic diagrams for explaining the manufacturing process of the semiconductor package module. FIG. 11A is a schematic perspective view of the package stack of the semiconductor package module according to the second embodiment as viewed from the side surface from which the U-phase terminal, V-phase terminal, and W-phase terminal protrude. FIG. 11B is a schematic perspective view of the package stack as seen from the side surface from which the P electrode terminal and the N electrode terminal protrude.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

(Embodiment 1)
FIG. 1 is a schematic perspective view showing the appearance of the semiconductor device according to the first embodiment. FIG. 2 is an exploded perspective view showing a schematic structure of the semiconductor device. FIG. 3 is a schematic perspective view of the package stack. FIG. 4 is a plan view of the semiconductor package module. The sealing material 300 is filled above the package stack 200 and in the gap between the side of the package stack 200 and the case body 100. In FIG. It is in the shape. 2 and 3 show a state in which the external terminals of the case body 100 are connected to the package stack 200. FIG. 4 shows a state in which the lid 120 and the control substrate 400 of the case body 100 are removed, and the illustration of the sealing material 300 that covers the upper side of the package stack 200 is omitted.

  The semiconductor package module 1 according to the present embodiment includes a case body 100, a package stack 200, a sealing material 300, and a control substrate 400.

(Case body)
The case body 100 includes a main body 110, a lid 120, a P external electrode 130P, an N external electrode 130N, a U output terminal 130U, a V output terminal 130V, and a W output terminal 130W. Hereinafter, the P external electrode 130P, the N external electrode 130N, the U output terminal 130U, the V output terminal 130V, and the W output terminal 130W are collectively referred to as the external terminal 130 as appropriate.

  The main body 110 includes a bottom 112 and four side walls 113, and has an accommodation space 111 for accommodating the package stack 200. The bottom portion 112 functions as a heat radiating plate for radiating heat from the package stack 200. A plurality of projecting portions 114 projecting substantially perpendicular to the side wall 113 are provided at the upper end edge of the two adjacent side walls 113, that is, the edge portion on the opposite side to the bottom portion 112. The protrusion 114 functions as a reinforcing member that supports the external terminal 130 in a state where the package stack 200 is accommodated in the accommodation space 111.

  The lid part 120 has a plurality of recesses 122 in which the external terminals 130 are fitted on two sides that are in contact with the two side walls 113 provided with the protruding parts 114 in a state of being fitted to the main body part 110. The lid 120 is provided with a plurality of control input / output terminals 124 on its main surface. The plurality of control input / output terminals 124 are electrically connected to a plurality of control ICs 430 (to be described later) of the control board 400 while being fitted to the main body 110.

  The P external electrode 130 </ b> P has a wiring part 132 </ b> P routed around the accommodation space 111. The N external electrode 130 </ b> N has a wiring part 132 </ b> N routed around the accommodation space 111. The U output terminal 130 </ b> U includes a wiring part 132 </ b> U that is routed through the accommodation space 111. The V output terminal 130 </ b> V has a wiring part 132 </ b> V that is routed in the accommodation space 111. The W output terminal 130 </ b> W includes a wiring part 132 </ b> W routed around the accommodation space 111. Hereinafter, the wiring part 132P, the wiring part 132N, the wiring part 132U, the wiring part 132V, and the wiring part 132W are collectively referred to as a wiring part 132 as appropriate.

  The wiring part 132P has a substantially U-shaped bent part 134P in which a P electrode terminal 212P described later is sandwiched. The wiring part 132N has a substantially U-shaped bent part 134N in which an N electrode terminal 212N described later is sandwiched. The wiring part 132U has a substantially U-shaped bent part 134U in which a U-phase terminal 212U to be described later is sandwiched. The wiring part 132V has a substantially U-shaped bent part 134V in which a V-phase terminal 212V described later is sandwiched. The wiring part 132W has a substantially U-shaped bent part 134W in which a W-phase terminal 212W described later is sandwiched. Hereinafter, the bent portion 134P, the bent portion 134N, the bent portion 134U, the bent portion 134V, and the bent portion 134W are collectively referred to as a bent portion 134 as appropriate. In the present embodiment, a single metal plate made of a metal whose main component is copper is bent, and the external terminal 130, the wiring portion 132, and the bent portion 134 are integrally formed. Here, “having copper as a main component” means that the content of copper is larger than 50%.

(Package stack)
The package stack 200 includes a U-phase package 210U, a V-phase package 210V, and a W-phase package 210W that constitute each phase of the three-phase inverter circuit, a plurality of heat sinks 230, and an insulating plate 240. Hereinafter, the U-phase package 210U, the V-phase package 210V, and the W-phase package 210W are collectively referred to as a package 210 as appropriate. The semiconductor package module 1 of this embodiment includes a U-phase package 210U, a V-phase package 210V, and a W-phase package 210W. However, the number and type of the semiconductor package module 1 are not limited as long as a plurality of packages are included. It can be appropriately changed according to the use of the module 1.

  Each package 210 has a plurality of lead terminals. Specifically, U-phase package 210U has P electrode terminal 212P, N electrode terminal 212N, and U phase terminal 212U as lead terminals. V-phase package 210V has P-electrode terminal 212P, N-electrode terminal 212N, and V-phase terminal 212V. W-phase package 210W has P-electrode terminal 212P, N-electrode terminal 212N, and W-phase terminal 212W. Hereinafter, the P electrode terminal 212P, the N electrode terminal 212N, the U phase terminal 212U, the V phase terminal 212V, and the W phase terminal 212W are collectively referred to as a lead terminal 212 as appropriate. The lead terminal 212 is made of a metal whose main component is copper.

  Each package 210 has a flat shape, and lead terminals protrude from the side surfaces of the package 210. In the present embodiment, the P electrode terminal 212P and the N electrode terminal 212N protrude from one of the two side surfaces substantially orthogonal to the bottom 112 of the case body 100 in a state where the package stack 200 is accommodated in the case body 100. Any one of the U-phase terminal 212U, the V-phase terminal 212V, and the W-phase terminal 212W protrudes from the other side surface.

  Each package 210 accommodates a semiconductor element that is electrically connected to a plurality of lead terminals 212. Specifically, U-phase package 210U accommodates two semiconductor elements 214U that perform U-phase switching operation of the inverter. V-phase package 210V accommodates two semiconductor elements 214V that perform V-phase switching operation of the inverter. W-phase package 210W accommodates two semiconductor elements 214W that perform the W-phase switching operation of the inverter. Hereinafter, the semiconductor element 214U, the semiconductor element 214V, and the semiconductor element 214W are collectively referred to as a semiconductor element 214 as appropriate.

  Each package 210 has a plate-like noise suppression member 216 made of a conductive material such as metal. Furthermore, each package 210 has a control terminal 218 to which a control signal for controlling the operation of the semiconductor element 214 is input. The control terminal 218 is located above the side surface far from the bottom portion 112, that is, the upper side surface, out of the two side surfaces parallel to the bottom portion 112 of the case body 100 in a state where the package stack 200 is accommodated in the case body 100. Protruding.

  Each package 210 is accommodated in the case body 100 in a state where the main surfaces of the adjacent packages 210 are arranged to face each other. Thereby, compared with the conventional semiconductor package module which arrange | positions and accommodates a flat package so that a mutual side surface opposes, the installation area of the semiconductor package module 1 can be reduced.

  In the present embodiment, the plurality of heat sinks 230 and the plurality of packages 210 are alternately arranged so that their main surfaces face each other. The heat radiating plate 230 is a member for radiating heat from the package 210 and is made of a material having high heat conductivity such as metal. Thereby, each package 210 will be in the state by which the main surface side was pinched | interposed by the two heat sinks 230. FIG. Furthermore, the lower side surface of each package 210 abuts on the bottom 112 that functions as a heat sink. In the conventional semiconductor package module described above, one main surface of each package could be brought into contact with the heat sink, but since the control board is mounted on the other main surface side, the heat dissipation efficiency of the package was low. It was. On the other hand, in the semiconductor package module 1 of the present embodiment, since the two main surfaces and one side surface of each package 210 can be brought into contact with the heat radiating plate, the heat dissipation efficiency of the package is improved as compared with the conventional structure. be able to.

  An external terminal 130 of the case body 100 is electrically connected to each lead terminal 212 of the plurality of packages 210. Specifically, the wiring portion 132P of the P external electrode 130P has three bent portions 134P on one end side, and P electrode terminals 212P of each package 210 are sandwiched between the bent portions 134P, and a solid phase described later. The bent portion 134P and the P electrode terminal 212P are joined by diffusion joining. The other end side of wiring portion 132P is routed to the main surface side of W-phase package 210W, which is the outermost package, and is connected to P external electrode 130P. Therefore, the P electrode terminal 212P of each package 210 is connected in parallel to the P external electrode 130P.

  The wiring part 132N of the N external electrode 130N has three bent parts 134N on one end side, the N electrode terminal 212N of each package 210 is sandwiched between the bent parts 134N, and the bent part 134N is formed by solid phase diffusion bonding. And N electrode terminal 212N are joined. The other end side of wiring portion 132N is routed to the main surface side of W-phase package 210W, which is the outermost package, and is connected to N external electrode 130N. Therefore, the N electrode terminal 212N of each package 210 is connected in parallel to the N external electrode 130N.

  The wiring portion 132U of the U output terminal 130U has a bent portion 134U on one end side, the U-phase terminal 212U of the U-phase package 210U is sandwiched between the bent portions 134U, and the bent portion 134U and U The phase terminal 212U is joined. The other end side of wiring portion 132U is routed upward (in the direction opposite to bottom portion 112) on the side surface side of U-phase package 210U and connected to U output terminal 130U.

  The wiring part 132V of the V output terminal 130V has a bent part 134V on one end side, the V-phase terminal 212V of the V-phase package 210V is sandwiched between the bent parts 134V, and the bent parts 134V and V are connected by solid phase diffusion bonding. The phase terminal 212V is joined. The other end side of the wiring portion 132V is routed upward on the side surface side of the V-phase package 210V and connected to the V output terminal 130V.

  The wiring part 132W of the W output terminal 130W has a bent part 134W on one end side, the W-phase terminal 212W of the W-phase package 210W is sandwiched between the bent parts 134W, and the bent parts 134W and W are connected by solid phase diffusion bonding. The phase terminal 212W is joined. The other end side of wiring portion 132W is routed upward on the side surface side of W-phase package 210W and connected to W output terminal 130W.

  An insulating plate 240 is disposed between the outermost heat sink 230 on the W-phase package 210W side and the wiring portions 132P and 132N. Thereby, the insulation with the heat sink 230 and the wiring parts 132P and 132N in the main surface side of the said heat sink 230 is ensured. In addition, the wiring part 132 is arranged on the side surface side of the heat radiating plate 230 so as to be separated from the side surface of the heat radiating plate 230. Thereby, the insulation of the heat sink 230 and the wiring part 132 in the side surface side of the heat sink 230 is ensured.

  Next, the internal structure of the package 210 will be described in detail. FIG. 5A is a schematic cross-sectional view of the package along a plane parallel to the main surface of the package. FIG. 5B is a schematic cross-sectional view taken along the line AA in FIG. Since the U-phase package 210U, the V-phase package 210V, and the W-phase package 210W have the same internal structure, the U-phase package 210U is described as an example here, and the description of the V-phase package 210V and the W-phase package 210W is omitted. To do.

  The semiconductor element 214U is electrically connected to the P electrode terminal 212P and the U phase terminal 212U of the U phase package 210U, respectively. The semiconductor element 214U on the P electrode terminal 212P is connected to the U phase terminal 212U through the power line 220. The semiconductor element 214U on the U-phase terminal 212U is connected to the N electrode terminal 212N through the power line 220. Each semiconductor element 214U has a gate electrode G. A control terminal 218 is connected to each gate electrode G via a control signal line 222. In addition, the control terminal 218 is connected via the control signal line 222 from the same region to which the power line 220 is connected in a predetermined region other than the gate electrode G of each semiconductor element 214U.

  In such a configuration, a control signal transmitted from the control board 400 (see FIG. 2) is input to the U-phase package 210U via the control terminal 218, and the switching operation of the semiconductor element 214U is executed. Thereby, U-phase power is output from U-phase terminal 212U.

  The plate-like noise suppression member 216 is disposed in parallel with the main surface of the U-phase package 210U. Further, when viewed from the direction intersecting with the main surface of the U-phase package 210U (see FIG. 5A), the noise suppression member 216 is disposed so as to overlap the two semiconductor elements 214U. Furthermore, the noise suppression member 216 is disposed so as to overlap the power supply line 220 and the control signal line 222. Further, the noise suppression member 216 is electrically connected to the N electrode terminal 212N via the connection member 217. In the present embodiment, the potential of the N external electrode 130N is a fixed potential. Therefore, the N electrode terminal 212N connected to the N external electrode 130N corresponds to a fixed potential lead terminal whose potential is a fixed potential. The fixed potential is, for example, ground.

  In this way, by providing the noise suppression member 216 electrically connected to the N electrode terminal 212N which is a fixed potential lead terminal, electromagnetic waves from the adjacent package 210 and the outside are shielded to suppress the generation of noise. be able to. Alternatively, generation of noise in the other package 210 can be suppressed by suppressing propagation of electromagnetic waves to the other package 210. Further, there is a capacitor (noise) between the noise suppression member 216 having a fixed potential and the P electrode terminal 212P, the U-phase terminal 212U, the semiconductor element 214U, the power supply line 220, and the control signal line 222 having a potential difference with respect to the fixed potential. Capacitor) is formed. With this capacitor, it is possible to suppress the flow of induced current generated by electromagnetic waves, and it is possible to suppress the generation of noise.

  In each package 210, the noise suppression member 216 is disposed on the side farther from the P external electrode 130P and the N external electrode 130N than the semiconductor element 214 in a state where the package stack 200 is accommodated in the case body 100 (FIG. 4). reference). Therefore, the semiconductor element 214U of the U-phase package 210U is protected from electromagnetic waves by the noise suppression member 216 of the U-phase package 210U and the V-phase package 210V. The semiconductor element 214V of the V-phase package 210V is protected from electromagnetic waves by the noise suppression member 216 of the V-phase package 210V and the W-phase package 210W. In addition, regarding the semiconductor element 214U of the W-phase package 210W, a part of the wiring portion 132N covers the main surface of the W-phase package 210W as viewed from the stacking direction of the package 210. Therefore, the semiconductor element 214U of the W-phase package 210W is protected from electromagnetic waves by the noise suppression member 216 of the W-phase package 210W and the wiring part 132N.

(Encapsulant)
As shown in FIGS. 2 and 4, the sealing material 300 is filled in a gap between the side wall 113 of the case body 100 and the package stack 200, and covers the upper surface of the package stack 200. Thereby, the package stack 200 is sealed in the case body 100 and is fixed in the case body 100. The sealing material 300 is, for example, silicon gel. The control terminal 218 of each package 210 passes through the sealing material 300 and protrudes upward from the upper main surface of the sealing material 300.

(Control board)
As shown in FIG. 2, the control board 400 includes a board 410, a plurality of wiring patterns 420, and a plurality of control ICs 430. The plurality of control ICs 430 provided on the substrate 410 are electrically connected to the control terminals 218 of the respective packages 210 through the wiring patterns 420, respectively. The control IC 430 outputs a control signal for controlling the switching operation to each package 210. Control board 400 is arranged such that its main surface faces the side surface of each package 210. Thereby, the heat sink 230 can be brought into contact with both main surfaces of each package 210.

  FIG. 6A is a schematic cross-sectional view of the vicinity of the connection portion between the control IC and the control terminal. FIG. 6B is a schematic plan view of the vicinity of the connection portion between the control IC and the control terminal. 6A corresponds to a schematic cross-sectional view along the line BB in FIG. 2 and a schematic cross-sectional view along the line CC in FIG. 6B.

  The substrate 410 has a through hole 412 at a predetermined position. The wiring pattern 420 includes an IC side land region 422, a pattern portion 424, and a terminal side land region 426. The terminal-side land region 426 is provided with a through hole 427. The wiring pattern 420 is disposed so that the through hole 427 in the terminal-side land region 426 and the through hole 412 in the substrate 410 overlap. The control IC 430 has a device electrode 432 on the surface. The element electrode 432 and the IC side land region 422 of the wiring pattern 420 are connected by wire bonding with a gold wire 428.

  In a state where the control substrate 400 is disposed on the sealing material 300, the control terminal 218 protruding from the surface of the sealing material 300 is inserted into the through hole 412 and the through hole 427, and on the surface of the terminal-side land region 426. Protruding. The control terminal 218 protruding in the terminal side land region 426 is fixed by the solder 440. Thereby, the control terminal 218 and the element electrode 432 are electrically connected via the wiring pattern 420 and the gold wire 428.

  In the semiconductor package module 1 having the above-described configuration, the U output terminal 130U, the V output terminal 130V, and the W output terminal 130W are connected to each terminal of a three-phase AC motor, for example. The P external electrode 130P and the N external electrode 130N are connected to an external power source such as a solar cell. The semiconductor package module 1 converts DC power supplied from an external power source into AC power and supplies it to a three-phase AC motor.

(Method for manufacturing semiconductor package module)
The semiconductor package module 1 according to the present embodiment can be manufactured as follows, for example. 7A to 7D, FIG. 8A and FIG. 8B, FIG. 9A and FIG. 9B, FIG. 10A and FIG. It is a process schematic diagram for demonstrating the manufacturing process of a package module. 7B to 7D, the mountain fold portion is indicated by a solid line, and the valley fold portion is indicated by a broken line.

  First, as shown in FIG. 7A, a U-phase package 210U, a V-phase package 210V, and a W-phase package 210W are prepared.

  Further, as shown in FIG. 7B, a metal plate 131U for the U output terminal 130U, a metal plate 131V for the V output terminal 130V, and a metal plate 131W for the W output terminal 130W are prepared. The metal plates 131U, 131V, 131W are made of a material whose main component is copper. Then, one end side of the metal plates 131U, 131V, 131W is valley-folded as indicated by an arrow i to form a U output terminal 130U, a V output terminal 130V, and a W output terminal 130W. Further, the other end side is folded as indicated by an arrow ii, and is folded as indicated by an arrow iii to form bent portions 134U, 134V, and 134W.

  Further, as shown in FIG. 7C, a metal plate 131N for the N external electrode 130N is prepared. The metal plate 131N is made of a material mainly composed of copper. Then, one end side of the metal plate 131N is mountain-folded as indicated by an arrow i to form an N external electrode 130N. Further, the middle portion is folded at a valley as indicated by an arrow ii to form a bent portion corresponding to the corner portion of the package stack 200. Further, the other end side is folded as shown by an arrow iii, and valley-folded as shown by an arrow iv to form three bent portions 134N.

  Further, as shown in FIG. 7D, a metal plate 131P for the P external electrode 130P is prepared. The metal plate 131P is made of a material mainly composed of copper. Then, one end side of the metal plate 131P is folded in a mountain as indicated by an arrow i to form a P external electrode 130P. Further, the middle portion is folded at a valley as indicated by an arrow ii to form a bent portion corresponding to the corner portion of the package stack 200. Further, the other end side is folded as shown by an arrow iii, and valley-folded as shown by an arrow iv to form three bent portions 134P.

  Note that the steps shown in FIGS. 7A to 7D are in no particular order.

  Next, as illustrated in FIG. 8A, the package stack 200 is formed by alternately stacking the four heat sinks 230 and the three packages 210 on the insulating plate 240. The package 210 is in the order of the W-phase package 210W, the V-phase package 210V, and the U-phase package 210U. Then, the external terminal 130 is fitted to the lead terminal 212 of each package. The P external electrode 130P and the N external electrode 130N are fitted so as to be positioned on the insulating plate 240 side. Further, at the time of fitting, the solution 500 is applied or filled into the bonded area of each wiring part 132, that is, the inner side of the bent part 134 and the bonded area of the lead terminal 212 by spray coating or the like. The solution 500 is a solution from which an oxide mainly composed of copper oxide is eluted, and is ammonia water, for example.

  As described above, the bent portion 134 and the lead terminal 212 are made of a material whose main component is copper. For this reason, the outermost surfaces of the bent portion 134 and the lead terminal 212 are composed of a natural oxide film formed by oxidizing copper in the atmosphere. This natural oxide film is a film composed of an oxide mainly composed of copper oxide. Here, “consisting mainly of copper oxide” means that the content of copper oxide is greater than 50%. In addition, the copper oxide which comprises the outermost surface of the bending part 134 and the lead terminal 212 may be formed by methods other than natural oxidation.

When the solution 500 is applied, the copper oxide constituting the outermost surface of the bent portion 134 is eluted into the solution 500. Further, the copper oxide constituting the outermost surface of the lead terminal 212 is eluted into the solution 500. The copper oxide constituting the outermost surface of the bent portion 134 and the copper oxide constituting the outermost surface of the lead terminal 212 are eluted into the solution 500, whereby copper is exposed on the exposed surface of the bent portion 134 and the exposed surface of the lead terminal 212, respectively. Is exposed. Further, in the solution 500, a copper complex is formed by ammonia ions and copper ions serving as ligands. In the present embodiment, the copper complex is considered to exist as a thermally decomposable tetraammine copper complex ion represented by [Cu (NH ₃ ) ₄ ] ²⁺ . In addition, since ammonia water is inactive with respect to copper, the copper which comprises the bending part 134 and the lead terminal 212 remains without reacting with ammonia water.

  Next, as shown in FIG. 8 (B), each bent portion 134 is sandwiched between stainless block bodies 510, and the stainless block body 510 is pressed against the bent portion 134 using a press machine. The bent portion 134 and the lead terminal 212 are pressurized so that the distance between the bonded portion and the bonded portion of the lead terminal 212 is reduced. The pressure at the time of pressurization in this step is, for example, 1 MPa. Note that the above-described solution 500 is present on the surface to be joined between the bent portion 134 and the lead terminal 212.

  Subsequently, in a state where the bent portion 134 and the lead terminal 212 are pressurized, heating is performed under a relatively low temperature condition of 200 ° C. to 300 ° C., whereby the joined portion of the bent portion 134 and the lead terminal 212 are changed. The solid phase diffusion of copper to the bonded part is advanced. By this solid phase diffusion, the joined portion of the bent portion 134 and the joined portion of the lead terminal 212 are joined. After the joining by the solid phase diffusion is completed, the heating is stopped and the pressure is released, the stainless block body 510 is removed, and the joining process of the bent portion 134 and the lead terminal 212 is completed.

  Next, as illustrated in FIG. 9A, the package stack 200 to which the external terminals 130 are connected is accommodated in the accommodation space 111 of the case body 100. The package stack 200 is accommodated in the accommodation space 111 such that the side opposite to the side from which the control terminal 218 of the package 210 protrudes faces the bottom 112 side of the main body 110. Within the accommodation space 111, the side surface of the package 210 and the bottom 112 come into contact with each other.

  Next, as illustrated in FIG. 9B, the accommodating space 111 is filled with a sealing material 300.

  Next, as shown in FIG. 10A, the control board 400 is accommodated in the accommodating space 111, and the control terminal 218 and the wiring pattern 420 are soldered. As a result, the control terminal 218 and the control IC 430 are electrically connected. Then, the lid 120 is fitted to the main body 110.

  Through the above steps, as shown in FIG. 10B, the semiconductor package module 1 according to the present embodiment is completed.

  In this embodiment, the lead terminal 212 and the bent part 134 of the wiring part 132 are joined by solid phase diffusion bonding. However, when the external terminal 130 and the lead terminal 212 are directly connected, the external terminal 130 and the lead terminal 212 are joined by solid phase diffusion bonding.

  In the manufacturing method of the semiconductor package module 1 described above, an oxide mainly composed of copper oxide formed on the outermost surface of the bent portion 134 and the lead terminal 212 is eluted in the solution 500 to bend the bent portion 134 and the lead. The surface to be joined of the terminal 212 is activated, and both are joined by solid phase diffusion of copper. Therefore, the bent portion 134 and the lead terminal 212 can be joined under a relatively low temperature condition. As a result, voids and by-products are prevented from being generated between the surface to be joined of the bent portion 134 and the surface to be joined of the lead terminal 212, thereby improving the connection reliability between the two. it can. In addition, since the contact resistance between the bent portion 134 and the lead terminal 212 can be reduced, the semiconductor package module 1 of the present embodiment is a package module that passes a large current, such as a semiconductor package module for an inverter. It can be suitably employed.

  In addition, since the oxide film formed on the surface of the bent portion 134 and the lead terminal 212 is eluted by using the solution 500 as described above without being broken by press working, the bent portion 134 and the lead terminal 212 are separated. The load required for joining is about 1 MPa. For this reason, it is possible to suppress mechanical damage from entering the joint portion between the bent portion 134 and the lead terminal 212, and consequently to prevent an increase in leakage current.

  In the manufacturing method described above, ammonia water is used as the solution 500, but the solution is not limited to this as long as it contains a ligand that forms a complex with copper. Good. Examples of the carboxylic acid used for the preparation of the aqueous carboxylic acid solution include monocarboxylic acids such as acetic acid, dicarboxylic acids such as oxalic acid, malonic acid, succinic acid, glutaric acid, phthalic acid, and maleic acid, and tartaric acid and citric acid. And oxycarboxylic acids such as lactic acid and salicylic acid.

  Among these, the carboxylic acid aqueous solution preferably has a carboxylic acid that serves as a polydentate ligand. In a carboxylic acid aqueous solution having a carboxylic acid serving as a multidentate ligand, the stability of the copper complex is greatly increased by forming a chelate between the carboxylic acid and copper. As a result, the temperature required for bonding can be further lowered. The formation of chelates by tartaric acid is described on page 593 of “Rikagaku Dictionary 4th Edition (Iwanami Shoten)”. Also, tartaric acid, oxalic acid and the like form a chelate is described in page 666 of “Heslop Jones Inorganic Chemistry (below) Translated by Yoshihiko Saito”. Here, chelation means that the stability of the complex is greatly increased by forming a ring with a multidentate ligand.

  As described above, in the semiconductor package module 1 according to the present embodiment, the plurality of flat packages 210 that accommodate the semiconductor elements 214 are arranged so that the main surfaces of the adjacent packages 210 face each other. Housed in case body 100. Therefore, the installation area of a plurality of packages can be reduced as compared with the conventional structure in which the side surfaces of adjacent packages are opposed to each other.

  In the semiconductor package module 1 of the present embodiment, one side surface of each package abuts on the bottom 112 of the case body 100, and the control board 400 is disposed on the side surface facing the side surface. Therefore, the heat sink 230 can be brought into contact with both main surfaces of each package, and the heat dissipation of the package can be improved. Further, the thermal imbalance in the entire semiconductor package module 1 can be corrected.

  Further, the packages 210 are arranged so that the main surfaces face each other. Therefore, in the conventional structure described above, when packages having different thicknesses are arranged, there is a possibility that the stacking of the control substrate on the package may be hindered due to a step due to the difference in thickness. Then there will be no such trouble. Therefore, since the degree of freedom of combination of packages is high, the expandability of the semiconductor package module 1 can be improved.

(Embodiment 2)
The semiconductor package module 1 according to the second embodiment has the same configuration as that of the semiconductor package module 1 according to the first embodiment except for the shape of the wiring part 132N of the N external electrode 130N. Hereinafter, the semiconductor package module according to the second embodiment will be described focusing on the configuration different from the first embodiment. The same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted as appropriate.

  FIG. 11A is a schematic perspective view of the package stack of the semiconductor package module according to the second embodiment as viewed from the side surface from which the U-phase terminal, V-phase terminal, and W-phase terminal protrude. FIG. 11B is a schematic perspective view of the package stack as seen from the side surface from which the P electrode terminal and the N electrode terminal protrude. 10A and 10B show a state where the package stack 200 to which the external terminals of the case body 100 are connected is placed on the bottom 112. FIG.

  In the semiconductor package module 1 according to the present embodiment, the wiring part 132N of the N external electrode 130N having a fixed potential has the noise suppressing part 136 in a region overlapping the main surface of the package 210 when viewed from the stacking direction of the package 210. Have. The noise suppression unit 136 is substantially flat and covers the main surface of the insulating plate 240. In the present embodiment, the noise suppression unit 136 is formed integrally with the wiring unit 132. Therefore, the noise suppression part 136 is a part where the wiring width in the wiring part 132N is widened.

  In each package 210, the semiconductor element 214U of the U-phase package 210U is protected from electromagnetic waves by the noise suppression member 216 of the U-phase package 210U and the V-phase package 210V. The semiconductor element 214V of the V-phase package 210V is protected from electromagnetic waves by the noise suppression member 216 of the V-phase package 210V and the W-phase package 210W. The semiconductor element 214U of the W-phase package 210W is protected from electromagnetic waves by the noise suppression member 216 and the noise suppression unit 136 of the W-phase package 210W.

  According to the semiconductor package module 1 according to the present embodiment described above, in addition to the effect obtained in the first embodiment, the effect that the semiconductor element 214 of each package 210 can be more reliably protected from electromagnetic noise is obtained. It is done. Thereby, the operation reliability of the semiconductor package module 1 can be further improved.

  The present invention is not limited to the above-described embodiments, and various modifications such as design changes can be added based on the knowledge of those skilled in the art, and the embodiments to which such modifications are added are also possible. It can be included in the scope of the present invention.

  In each of the embodiments described above, the semiconductor package module 1 has three packages 210, and all the packages 210 are accommodated in the case body 100 in a state where the main surfaces of adjacent packages are opposed to each other. Yes. However, the configuration of the semiconductor package module 1 is not particularly limited to this, and when three or more packages 210 are accommodated in the case body 100, at least two packages 210, that is, the first package 210 and the second package 210 are included. It is only necessary that the package 210 is accommodated in the case body 100 in a state where the main surfaces of the package 210 are opposed to each other. Even in this case, the effects of the above-described embodiments can be obtained.

  DESCRIPTION OF SYMBOLS 1 Semiconductor package module, 100 case body, 130 external terminal, 130N N external electrode, 130PP external electrode, 130U U output terminal, 130V V output terminal, 130WW output terminal, 132, 132N, 132P, 132U, 132V, 132W wiring Part, 136 noise suppression part, 210 package, 210U U phase package, 210V V phase package, 210W W phase package, 212 lead terminal, 212N N electrode terminal, 212P P electrode terminal, 212U U phase terminal, 212V V phase terminal, 212W W phase terminal, 214, 214U, 214V, 214W semiconductor element, 216 noise suppression member, 218 control terminal, 230 heat sink, 400 control board.

Claims (8)

  The flat first package for housing the semiconductor element and the flat second package for housing the semiconductor element are accommodated in the case body in a state where the main surfaces are opposed to each other. A featured semiconductor package module. A plurality of flat packages having a plurality of lead terminals and containing semiconductor elements electrically connected to the plurality of lead terminals;
A case body having a plurality of external terminals connected to the lead terminals of the plurality of packages, the plurality of packages being accommodated in a state where the main surfaces of the adjacent packages are opposed to each other, and
A semiconductor package module comprising: The plurality of packages contain a semiconductor element that performs a U-phase switching operation of the inverter, a U-phase package having a P electrode terminal, an N electrode terminal, and a U-phase terminal as the lead terminals, and a V-phase switching operation of the inverter. A semiconductor element is accommodated, a V-phase package having a P-electrode terminal, an N-electrode terminal and a V-phase terminal as the lead terminal, and a semiconductor element performing a W-phase switching operation of the inverter, and a P-electrode as the lead terminal Including a W-phase package having a terminal, an N-electrode terminal and a W-phase terminal;
In the case body, as the external terminal, a P external electrode to which P electrode terminals of each package are connected in parallel, an N external electrode to which N electrode terminals of each package are connected in parallel, and the U phase terminal are electrically connected The semiconductor package module according to claim 2, further comprising: a U output terminal to be connected; a V output terminal to which the V phase terminal is electrically connected; and a W output terminal to which the W phase terminal is electrically connected. Each package has a control terminal to which a control signal for controlling the operation of the semiconductor element is input,
A control board connected to the control terminal of each package and outputting the control signal to each package;
4. The semiconductor package module according to claim 2, wherein the control substrate is disposed such that a main surface thereof faces a side surface of each package.   The plurality of lead terminals and the plurality of external terminals or wiring portions of the external terminals are formed of a metal having copper as a main component and the bonded portions are bonded to each other by solid phase diffusion. 5. The semiconductor package module according to any one of 2 to 4. A plurality of heat dissipating plates that dissipate heat from the package;
6. The semiconductor package module according to claim 2, wherein the plurality of heat radiation plates and the plurality of packages are arranged such that main surfaces thereof face each other.   The plurality of packages each include a noise suppression member that is electrically connected to a fixed potential lead terminal having a fixed potential among the plurality of lead terminals, and is arranged in parallel with a main surface of the package. 7. The semiconductor package module according to claim 6.   The wiring portion of the external terminal having a fixed potential among the plurality of external terminals is electrically connected to the lead terminal of each package, and is routed to the main surface side of the outermost package, thereby stacking the packages. The semiconductor package module according to claim 2, further comprising a noise suppressing portion in a region overlapping with a main surface of the package when viewed from the direction.

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