JP2013110438A - Placement base and plasma processing apparatus using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a placement base which reduces the repair frequency of a sprayed coating and a plasma processing apparatus using the placement base.SOLUTION: A substrate G is placed on a placement base 3 in a processing chamber where plasma treatment is performed on the substrate. The placement base 3 includes: a base material 5; a placement part 6' formed on the base material and on which the substrate is placed, and a division type shield member 7' provided around the placement part 6'. The placement part 6' is composed of a ceramic member 43' forming a portion corresponding to a divided part of the shield member 7' and a sprayed coating part which forms the other portion of the placement part 6' and has a ceramic sprayed coating on its surface. The ceramic member 43' is replaceable.

Description

  The present invention relates to a mounting table for mounting a substrate in a processing chamber that performs plasma processing such as dry etching on a substrate such as a glass substrate for manufacturing a flat panel display (FPD) such as a liquid crystal display (LCD). The present invention relates to a plasma processing apparatus using the same.

  For example, in an FPD or semiconductor manufacturing process, plasma processing such as dry etching is performed on a glass substrate that is a substrate to be processed. For example, plasma is generated by supplying high-frequency power to the mounting table in a state where the glass substrate is mounted on the mounting table provided in the processing chamber, and a predetermined plasma process is performed on the glass substrate by the plasma. As a mounting table used for such a plasma treatment, one having a ceramic spray coating formed on the surface is known from the viewpoint of plasma resistance and the like.

  Such a sprayed coating is normally covered with a substrate during plasma treatment, and plasma is prevented from reaching directly, but the orientation flat portion at the corner of the glass substrate has a small overlap amount of the glass substrate. The corner portion of the sprayed coating may be exposed and the sprayed coating may be shaved due to an error in the position of the glass substrate.

  On the other hand, in a plasma processing apparatus for a glass substrate for FPD, a ceramic shield ring is disposed around the mounting table. However, in recent years, glass substrates for FPD have been constantly increasing in size and are difficult to form integrally. As described in Patent Document 1, a split type shield ring is used.

  However, in such a split type shield ring, there is a case where a gap is generated at the joint portion due to the assembling tolerance of the divided parts, and plasma is penetrated from the gap portion and the sprayed coating may be scraped off.

  When the thermal spray coating is scraped in this way, the repair has been carried out by performing partial repair or total peeling re-spraying on the shaved portion, but the repair frequency is high and the repair cost is extremely high. ing.

JP 2003-115476 A

  This invention is made | formed in view of this situation, Comprising: It aims at providing the plasma processing apparatus using the mounting base which can reduce the repair frequency of a thermal spray coating, and such a mounting base.

  In order to solve the above-described problem, according to a first aspect of the present invention, there is provided a mounting table for mounting a substrate in a processing chamber for performing plasma processing on the substrate, which is formed on a base material and the base material, A mounting portion on which the substrate is mounted, and a split-type shield member provided around the mounting portion, wherein the mounting portion corresponds to a divided portion of the shield member. There is provided a mounting table comprising a ceramic member constituting a part and a sprayed part having a ceramic sprayed coating on the surface constituting the other part, wherein the ceramic member is replaceable.

  According to a second aspect of the present invention, there is provided a mounting table for mounting a substrate in a processing chamber for performing plasma processing on the substrate, the substrate being formed on the base material, and the substrate being mounted thereon And a split-type shield member provided around the mounting portion, and the mounting portion constitutes a portion corresponding to a corner portion and a split portion of the shield member. There is provided a mounting table comprising a ceramic member and a sprayed part having a ceramic sprayed coating on the surface constituting the other part, wherein the ceramic member is replaceable.

In the first and second aspects, the sprayed portion may include an electrostatic chuck that electrostatically attracts the substrate. The electrostatic chuck includes an electrode to which a DC voltage for electrostatically attracting the substrate is applied, and the ceramic member corresponds to the upper portion including a height position corresponding to the electrode and the electrode. It is preferable that the lower part does not include a height position, the upper part is located outside the electrode, and the lower part protrudes inward from the upper part. Furthermore, the base material may be conductive, and may further include high-frequency power supply means for supplying high-frequency power to the base material. The ceramic sprayed coating and the ceramic member are preferably made of a material selected from alumina (Al ₂ O ₃ ), yttria (Y ₂ O ₃ ), and yttrium fluoride (YF ₃ ).

  In a third aspect of the present invention, a processing chamber that accommodates a substrate, a mounting table that mounts a substrate in the processing chamber, and has the configuration of any of the first and second aspects, and the processing chamber A plasma processing comprising: a processing gas supply mechanism for supplying a processing gas therein; a plasma generating mechanism for generating plasma of the processing gas in the processing chamber; and an exhaust mechanism for exhausting the processing chamber. Providing equipment.

  According to the present invention, in a mounting table using a ceramic sprayed coating on a mounting portion for mounting a substrate in a processing chamber that performs plasma processing on the substrate, alignment of corners and / or shield rings that are susceptible to plasma damage is performed. Since the replaceable ceramic member is provided in the portion corresponding to the eyes, most of the damage caused by the plasma is carried by the ceramic member, and the sprayed coating can be hardly damaged. For this reason, the repair frequency of a thermal spray coating can be reduced remarkably, and the repair cost of a mounting base can be made extremely low.

Sectional drawing which shows the plasma processing apparatus provided with the mounting base which concerns on one Embodiment of this invention. The top view which expands and shows the principal part of the mounting base used for the plasma processing apparatus of FIG. Sectional drawing which expands and shows the principal part of the mounting base used for the plasma processing apparatus of FIG. The top view which shows the state in which the corner | angular part of the electrostatic chuck was covered with the glass substrate. The top view which shows the state which the corner | angular part of the electrostatic chuck exposed. The perspective view which shows the ceramic member of the electrostatic chuck used for the mounting base of FIG. The perspective view which shows the mounting base which used the shield ring as the division | segmentation type. The figure which shows the state which the clearance gap produced in the joint part of the division piece of a shield ring. The top view which expands and shows the principal part of the mounting base of FIG. Sectional drawing which expands and shows the principal part of the mounting base of FIG. The perspective view which shows the ceramic member of the electrostatic chuck used for the mounting base of FIG. The top view which expands and shows the principal part of the other example of the mounting base of FIG. The perspective view which shows the ceramic member of the electrostatic chuck used for the mounting base shown in FIG.

  Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing a plasma processing apparatus provided with a mounting table according to an embodiment of the present invention. The plasma processing apparatus 1 is a cross-sectional view of an apparatus that performs a predetermined process on an FPD glass substrate G, and is configured as a capacitively coupled parallel plate plasma etching apparatus. Here, as FPD, a liquid crystal display (LCD), an electroluminescence (Electro Luminescence; EL) display, a plasma display panel (PDP), etc. are illustrated.

  The plasma processing apparatus 1 includes a chamber 2 formed into a rectangular tube shape made of aluminum, for example, whose surface is anodized (anodized). A mounting table 3 for mounting a glass substrate G as a substrate to be processed is provided at the bottom of the processing chamber 2.

  The mounting table 3 is supported on the bottom of the processing chamber 2 via an insulating member 4, and mounts a metal convex base 5 and a glass substrate G provided on the convex 5 a of the base 5. A mounting portion 6 to be placed, a frame-shaped shield ring 7 made of insulating ceramics, for example, alumina, provided around the mounting portion 6 and the convex portion 5 a of the base material 5, and provided around the base material 5. And a ring-shaped insulating ring 8 made of alumina, for example, alumina. The mounting unit 6 has an electrostatic chuck that electrostatically attracts the glass substrate as will be described later.

  Lifting pins 10 for loading and unloading the glass substrate G onto the bottom wall of the chamber 2, the insulating member 4 and the mounting table 3 are inserted so as to be able to move up and down. When the glass substrate G is transported, the elevating pins 10 are raised to the transport position above the mounting table 3, and are otherwise immersed in the mounting table 3.

  A power supply line 12 for supplying high-frequency power is connected to the base material 5 of the mounting table 3, and a matching unit 13 and a high-frequency power source 14 are connected to the power supply line 12. From the high frequency power supply 14, for example, high frequency power of 13.56 MHz is supplied to the base material 5 of the mounting table 3. Therefore, the mounting table 3 functions as a lower electrode.

  Above the mounting table 3, a shower head 20 that functions as an upper electrode is provided in parallel with the mounting table 3. The shower head 20 is supported on the upper part of the processing chamber 2, has an internal space 21 inside, and has a plurality of discharge holes 22 for discharging processing gas on the surface facing the mounting table 3. The shower head 20 is grounded and constitutes a pair of parallel plate electrodes together with the mounting table 3 functioning as a lower electrode.

A gas inlet 24 is provided on the upper surface of the shower head 20, and a processing gas supply pipe 25 is connected to the gas inlet 24, and the processing gas supply pipe 25 is connected to a processing gas supply source 28. Yes. Further, an opening / closing valve 26 and a mass flow controller 27 are interposed in the processing gas supply pipe 25. A processing gas for plasma processing, for example, plasma etching, is supplied from the processing gas supply source 28. As the processing gas, a gas usually used in this field, such as a halogen-based gas, an O ₂ gas, or an Ar gas, can be used.

  An exhaust pipe 29 is formed at the bottom of the processing chamber 2, and an exhaust device 30 is connected to the exhaust pipe 29. The exhaust device 30 includes a vacuum pump such as a turbo molecular pump, and is configured so that the processing chamber 2 can be evacuated to a predetermined reduced pressure atmosphere. A substrate loading / unloading port 31 is provided on the side wall of the processing chamber 2, and the substrate loading / unloading port 31 can be opened and closed by a gate valve 32. And the glass substrate G is carried in / out by a transfer device (not shown) with the gate valve 32 opened.

Next, the structure of the mounting portion 6 of the mounting table 3 will be described in detail.
FIG. 2 is an enlarged plan view showing the mounting portion 6 of the mounting table 3, and FIG. 3 is a cross-sectional view taken along line AA. As shown in these drawings, the mounting portion 6 has a ceramic sprayed coating 41 on the surface, and an electrostatic chuck 40 which is a sprayed portion in which an electrode 42 is embedded, and a ceramic member 43 constituting a corner portion. And. The electrode 42 has a rectangular shape slightly smaller than the glass substrate G, and is formed by thermal spraying, for example. A feed line 33 is connected to the electrode 42, and a DC power supply 34 is connected to the feed line 33. When a DC voltage from the DC power supply 34 is applied to the electrode 42, electrostatic force such as Coulomb force is applied. The glass substrate G is adsorbed by the adsorbing force. The electrode 42 may be a plate material.

Examples of the constituent material of the ceramic spray coating 41 and the ceramic member 43 include alumina (Al ₂ O ₃ ), yttria (Y ₂ O ₃ ), and yttrium fluoride (YF ₃ ). As long as they are made of the same material, they may be the same material or different materials. Alumina (Al ₂ O ₃ ) is preferable from the viewpoint of cost, but yttria (Y ₂ O ₃ ) and yttrium fluoride (YF ₃ ) are preferable when plasma resistance is important. The constituent materials of the ceramic spray coating 41 and the ceramic member 43 are not limited to these materials, and may be other dielectric ceramics.

  A notch corresponding to the ceramic member 43 is formed in a corner portion of the mounting portion 6 having the electrostatic chuck 40, and the ceramic member 43 is fitted into that portion and pressed by the shield ring 7.

  As shown in the plan view of FIG. 4, the corner 6 a of the mounting portion 6 is normally covered with the glass substrate G, and even when the corner where the orientation flat F exists is located, Designed to be covered. However, the corner where the orientation flat F is present has a small overlap margin, and as shown in FIG. 5, the corner 6a of the placement portion 6 is exposed to the plasma due to a slight displacement of the placement position of the substrate G. May be damaged by plasma. In the past, the corners exposed to such plasma were also composed of ceramic sprayed coatings. Therefore, every time the corners were damaged by the plasma, it was necessary to re-spray to repair the sprayed coating. The frequency was high and the repair cost was high.

On the other hand, when the corner portion 6a is composed of the ceramic member 43, since the ceramic member 43 bears most of the plasma damage to the corner portion, the damage can be dealt with by replacing the ceramic member 43. It is possible to hardly cause damage to the sprayed coating. For this reason, the repair frequency of a thermal spray coating can be reduced remarkably, and the repair cost of the mounting base 3 can be made extremely low. Further, in consideration of such points, the ceramic spray coating 41 that is hardly damaged by plasma is made of inexpensive alumina (Al ₂ O ₃ ), and the ceramic member 43 that bears most of the plasma damage is made of yttria (plasma resistant). By comprising Y ₂ O ₃ ) or yttrium fluoride (YF ₃ ), the plasma resistance can be improved without causing an excessive increase in cost.

  As shown in the perspective view of FIG. 6, the ceramic member 43 has a small diameter so that the upper portion 43 a does not engage the electrode 42 of the electrostatic chuck 40, and the lower portion 43 b where no electrode is present considers assembly. And it has a large diameter.

Next, the processing operation in the plasma processing apparatus 1 configured as described above will be described.
First, the gate valve 32 is opened, and the glass substrate G is loaded into the chamber 2 via the substrate loading / unloading port 31 by a transfer arm (not shown) and placed on the electrostatic chuck 6 of the mounting table 3. In this case, the elevating pins 10 are projected upward to be positioned at the support position, and the glass substrate G on the transfer arm is transferred onto the elevating pins 10. Thereafter, the elevating pins 10 are lowered to place the glass substrate G on the electrostatic chuck 6 of the mounting table 3.

  Thereafter, the gate valve 32 is closed, and the inside of the chamber 2 is evacuated to a predetermined degree of vacuum by the exhaust device 30. The glass substrate G is electrostatically attracted by applying a voltage from the DC power supply 34 to the electrode 42 of the electrostatic chuck 40. Then, the valve 26 is opened, and the processing gas from the processing gas supply source 28 is adjusted in flow rate by the mass flow controller 27, while passing through the processing gas supply pipe 25 and the gas inlet 24, the internal space 21 of the shower head 20. Then, the liquid is uniformly discharged onto the substrate G through the discharge holes 22, and the inside of the chamber 2 is controlled to a predetermined pressure while adjusting the exhaust amount.

  In this state, high-frequency power for plasma generation is supplied from the high-frequency power source 14 through the matching unit 13 to the base 5 of the mounting table 3, and between the mounting table 3 as the lower electrode and the shower head 20 as the upper electrode. A high-frequency electric field is generated to generate plasma of a processing gas, and plasma processing is performed on the glass substrate G by this plasma.

  At this time, as described above, when the orientation flat F is formed at the corner of the glass substrate G, the mounting position of the glass substrate G is shifted as shown in FIG. If the part is a ceramic sprayed coating, it is necessary to perform the spraying process again for repair. In this embodiment, the ceramic member 43 is provided in that portion, and since the ceramic member 43 bears most of the plasma damage to the corners, it can be dealt with by exchanging the ceramic member 43, and the ceramic spray coating is damaged. It can be made to hardly occur. For this reason, the repair frequency of a thermal spray coating can be reduced remarkably, and the repair cost of the mounting base 3 can be made extremely low.

  Further, the upper portion 43a of the ceramic member 43 has a small diameter so as not to be hooked on the electrode 42, and the electrode 42 can be kept in the same shape as the conventional one. The influence of the electric field and the influence on the DC voltage application unit can be avoided. Moreover, by making the lower part 43b large diameter, stability can be made high and the assembly | attachment property of a member can be made favorable.

Next, another example of the mounting table 3 will be described.
Here, a split type shield ring 7 'is used. Specifically, as shown in FIG. 7, four divided pieces 51 are assembled to form a shield ring 7 ′.

  In this case, due to the assembling tolerance of the split piece 51, as shown in FIG. 8, a gap may be generated in the joint portion 52 of the split piece 51, and plasma may enter from the gap portion.

  Here, a mounting portion 6 'that can prevent damage to the sprayed coating in such a case is used. FIG. 9 is a plan view showing the main part of the mounting table using the mounting portion 6 ′, and FIG. 10 is a sectional view taken along the line BB. As shown in these drawings, the mounting portion 6 ′ has an electrostatic chuck 40 composed of a ceramic sprayed coating 41 and an electrode 42, similar to the mounting portion 6, but unlike the mounting portion 6, A ceramic member 43 ′ is disposed at a position corresponding to the eye portion 52. The ceramic member 43 ′ can be configured in the same manner as the ceramic member 43. The mounting portion 6 ′ has a notch formed at a position corresponding to the joint portion 52, and the ceramic member 43 ′ is fitted into that portion and pressed by the shield ring 7 ′. As shown in the perspective view of FIG. 11, the shape of the ceramic member 43 'in this case is similarly small so that the upper portion 43a' does not engage the electrode 42 of the electrostatic chuck 40, and the lower portion 43b where no electrode exists. ′ Has a large diameter in consideration of assembly.

  By adopting such a configuration of the mounting portion 6 ', even when plasma enters the seam 52 of the adjacent split piece 51 of the shield ring 7' during plasma processing, it is exposed to the plasma and damaged. This is almost only the ceramic member 43 'and can be dealt with by exchanging the ceramic member 43', so that the sprayed coating is hardly damaged. For this reason, the repair frequency of a thermal spray coating can be reduced remarkably, and the repair cost of the mounting base 3 can be made extremely low.

Next, still another example of the mounting table 3 will be described.
Here, the split type shield ring 7 ′ is used as in the above example, there is a possibility that a gap is generated in the joint portion 52 of the split piece 51 and plasma damage may occur, and the corner portion of the mounting portion In addition, the configuration of the mounting portion that can cope with the possibility of plasma damage is used.

  FIG. 12 is a plan view showing still another example of the mounting table. As shown in this figure, the mounting portion 6 ″ differs from the mounting portions 6 and 6 ′ in that a ceramic member 43 ″ is disposed from the position corresponding to the joint portion 52 to the corner portion 6a ″. The ceramic member 43 ″ can be configured in the same manner as the ceramic members 43 and 43 ′. The mounting portion 6 ″ is previously formed with a notch from a position corresponding to the joint portion 52 to the corner portion 6a ″, and the ceramic member 43 ″ is fitted into this portion and pressed by the shield ring 7 ′. As shown in the perspective view of FIG. 13, the shape of the ceramic member 43 ″ in this case has a small diameter so that the upper portion 43a ″ does not hang over the electrode 42, and the lower portion 43b ″ where no electrode exists. Has a large diameter in consideration of assembly.

  With such a configuration of the mounting portion 6 ″, when the plasma enters during the plasma processing from the joint 52 of the adjacent split piece 51 of the shield ring 7 ′, the corner portion 6a ″ is exposed to the plasma. Even in this case, only the ceramic member 43 ″ is damaged by exposure to the plasma, and can be dealt with by replacing the ceramic member 43 ″, so that the thermal spray coating is hardly damaged. Can do. For this reason, the repair frequency of a thermal spray coating can be reduced remarkably, and the repair cost of the mounting base 3 can be made extremely low.

  In addition, this invention is not limited to the said embodiment, A various deformation | transformation is possible. For example, in the above-described embodiment, the case where the present invention is applied to the plasma processing of a glass substrate for FPD has been described.

  Moreover, in the said embodiment, although the mounting part of the mounting base using an electrostatic chuck was shown as an example, it is not always necessary to use an electrostatic chuck, and the mounting part is simply formed of a ceramic spray coating. It is also applicable to.

DESCRIPTION OF SYMBOLS 1; Plas processing apparatus 2; Processing chamber 3; Mounting stand 5; Base material 6, 6 ', 6 "; Mounting part 6a; Corner part 7, 7'; Shield ring 14; Gas supply source 34; DC power supply 40; Electrostatic chuck 41; Ceramic spray coating 42; Electrode 43, 43 ', 43 "; Ceramic member 43a, 43a', 43a"; Upper part 43b, 43b ', 43b "; Lower part 51; Divided piece 52; joint portion F; orientation flat G; glass substrate

Claims (7)

A mounting table for mounting a substrate in a processing chamber for performing plasma processing on the substrate,
A substrate;
A mounting portion that is formed on the substrate and on which the substrate is mounted;
Provided with a split-type shield member provided around the mounting portion,
The mounting portion is composed of a ceramic member constituting a portion corresponding to the divided portion of the shield member, and a thermal spray portion having a ceramic spray coating on the surface constituting the other portion,
The mounting table, wherein the ceramic member is replaceable. A mounting table for mounting a substrate in a processing chamber for performing plasma processing on the substrate,
A substrate;
A mounting portion that is formed on the substrate and on which the substrate is mounted;
Provided with a split-type shield member provided around the mounting portion,
The mounting portion is composed of a ceramic member constituting a portion corresponding to a corner portion and a divided portion of the shield member, and a thermal spray portion having a ceramic spray coating on the surface constituting the other portion,
The mounting table, wherein the ceramic member is replaceable.   The mounting table according to claim 1, wherein the thermal spraying unit includes an electrostatic chuck that electrostatically attracts the substrate. The electrostatic chuck has an electrode to which a DC voltage for electrostatically attracting the substrate is applied,
The ceramic member has an upper portion including a height position corresponding to the electrode, and a lower portion not including a height position corresponding to the electrode,
The mounting table according to claim 3, wherein the upper part is located outside the electrode, and the lower part protrudes inward from the upper part.   5. The mounting table according to claim 1, wherein the base material is conductive and further includes high-frequency power supply means for supplying high-frequency power to the base material. The ceramic sprayed coating and the ceramic member are made of a material selected from alumina (Al ₂ O ₃ ), yttria (Y ₂ O ₃ ), and yttrium fluoride (YF ₃ ). The mounting table according to any one of claims 1 to 5. A processing chamber containing a substrate;
A mounting table having a configuration according to any one of claims 1 to 6, wherein a substrate is mounted in the processing chamber;
A processing gas supply mechanism for supplying a processing gas into the processing chamber;
A plasma generation mechanism for generating a plasma of a processing gas in the processing chamber;
A plasma processing apparatus comprising an exhaust mechanism for exhausting the inside of the processing chamber.

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