JP2013101361A - Manufacturing method of color filter - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a color filter using a gradation mask which can perform delicate adjustment of transmittance and is useful for forming three or more kinds of different members in a color filter.SOLUTION: A manufacturing method of a color filter uses a gradation mask 11. The gradation mask comprises: a transparent substrate 12; a light shielding film 13 formed on the transparent substrate 12 in a pattern shape; and a semitransparent film 14 having a transmittance adjustment function. The gradation mask comprises: a transmission area 21 which has only the transparent substrate 12; a light shielding area 22 where a main pattern of the light shielding film 13 is provided on the transparent substrate 12; and a second semitransparent region 24 in which only an auxiliary pattern of the semitransparent film 14 is provided on the transparent substrate 12 and at least either one of the auxiliary pattern of the semitransparent film 14 and an opening has size of a resolution limit or below.

Description

  The present invention relates to a method for manufacturing a color filter used in, for example, a liquid crystal display device or an organic electroluminescence display device, and forms various members in the color filter by halftone exposure using a gradation mask. It is about the method.

  For example, a reflow method or an ashing method is disclosed as a pattern forming method for reducing the number of lithography steps of a display device such as a liquid crystal display device or an organic electroluminescence display device (see, for example, Patent Document 1 and Patent Document 2). In addition, in the above-mentioned patent documents, a photomask (slit mask) having a minute slit below the resolution limit of exposure light, and a photomask (halftone mask) having a gradation with respect to the exposure light using a translucent film ) Is disclosed.

  In the slit mask, a general light shielding film such as a chromium film that substantially shields exposure light is used, and a fine slit below the resolution limit of the exposure machine is disposed in the light shielding film (see, for example, Patent Document 3). Since the slit of the mask has a size not larger than the resolution limit, the mask itself does not form an image on the resist, and the exposure light according to the size is transmitted to the area including the surrounding non-opening region. For this reason, the slit mask functions as if a translucent film exists in the area where the slit is formed and the area including the periphery of the area.

  The halftone mask uses a light-shielding film that substantially shields the exposure light and a semi-transparent film that transmits the exposure light at a desired transmittance. The light-transmissive area and the light-shielded area that does not transmit light. And a semi-transparent region in which the amount of transmitted light is adjusted (see, for example, Patent Document 4).

  As a pattern forming method using a halftone mask, for example, a method is disclosed in which columnar spacers and liquid crystal alignment function protrusions in a color filter for a liquid crystal display device are collectively formed (see Patent Document 5). In this halftone mask, the thickness of the photosensitive resin layer after development can be controlled in two stages by controlling the amount of transmitted light according to regions having different transmittances, so that batch exposure using a halftone mask is possible. Thus, two types of patterns can be formed simultaneously.

Japanese Patent No. 3415602 JP 2000-66240 A JP 2002-196474 A JP 2002-189280 A JP 2005-84366 A

  In the slit mask described above, the thickness of the photosensitive resin layer after exposure and development can be controlled by changing the line width and pitch of the slit. However, in the case of a large-sized slit mask that is applied to the manufacture of a display device, the line width of a fine slit is limited to about 1.0 μm with the current patterning technology, and it is difficult to finely adjust the transmittance. It is.

  On the other hand, in the above halftone mask, the thickness of the photosensitive resin layer after exposure and development can be controlled by adjusting the transmittance of the semitransparent film. The transmittance of the translucent film can be controlled by adjusting the thickness of the translucent film. For this reason, when the transmittance of the semitransparent film is relatively high, it is necessary to reduce the thickness of the semitransparent film. However, if the thickness of the semi-transparent film is too thin, the apparatus transport speed at the time of forming the semi-transparent film is increased, which makes it difficult to form a thin film stably in an apparatus. In addition, when the transmittance of the semitransparent film is relatively low, it is necessary to increase the thickness of the semitransparent film. However, if the thickness of the semitransparent film is too thick and the transmittance is too low, the ratio of the transmittance to the film thickness distribution increases, so that there is a problem that the substantial transmittance distribution deteriorates.

  Further, in order to simultaneously form three or more types of patterns by batch exposure using a halftone mask or a slit mask, the halftone mask and the slit mask may be multi-graded.

  In the slit mask, multiple gradations can be achieved by periodically changing the line width and pitch of the slit. However, as described above, in a large-sized slit mask that is applied to the manufacture of a display device, the line width of a fine slit is limited to about 1.0 μm with the current patterning technology, and the transmittance is subtle. Adjustment was difficult.

  In the halftone mask, multiple gradations can be achieved by repeatedly forming and patterning a semitransparent film. However, when performing patterning multiple times, it is necessary to consider the etching selectivity, so it is necessary to prepare multiple etching techniques (multiple devices, etchants, gases, etc.), which increases the number of facilities and processes. was there. Therefore, it was difficult to actually produce a multi-tone halftone mask.

  The present invention has been made in view of the above problems, and a main object of the present invention is to provide a method of manufacturing a color filter using a halftone mask (gradation mask) capable of finely adjusting the transmittance. . Furthermore, it is a main object of the present invention to provide a color filter manufacturing method using a halftone mask (gradation mask) useful for forming three or more kinds of different members in a color filter.

  In order to achieve the above object, the present invention comprises a photosensitive resin layer forming step of forming a photosensitive resin layer made of a photosensitive resin on a substrate, and exposing the photosensitive resin layer using a gradation mask. Development of a color filter having a different member forming step of simultaneously forming a plurality of different members made of the photosensitive resin, wherein the gradation mask is formed on the transparent substrate and the transparent substrate. A light-shielding film having a light-shielding film formed in a pattern and a translucent film having a transmittance adjusting function, a light-transmitting region having only the transparent substrate, and a light-shielding light in which the main pattern of the light-shielding film is provided on the transparent substrate A second semi-transparent region in which only the auxiliary pattern of the semi-transparent film is provided on the transparent substrate, and at least one of the auxiliary pattern of the semi-transparent film and the opening has a dimension less than or equal to the resolution limit; Have To provide a method for manufacturing a color filter according to claim Rukoto.

  According to the present invention, in the gradation mask, since the second semi-transparent region in which only the auxiliary pattern of the semi-transparent film is formed is provided, when a light shielding film like a conventional slit mask is slitted, Transmittance that cannot be obtained by simply forming a translucent film like a conventional gradation mask can be achieved, and the range of transmittance design is widened. Therefore, in the present invention, by using such a gradation mask, it is easy to control the film thickness of the photosensitive resin layer, and members of various thicknesses and heights can be formed simultaneously.

  In the above invention, the gradation mask is provided with the auxiliary pattern of the light shielding film and the pattern of the semitransparent film on the transparent substrate, and at least one of the auxiliary pattern of the light shielding film and the opening is resolved. You may have the 3rd semi-transparent area | region which has the dimension below a limit and the said translucent film | membrane is formed on the said transparent substrate in the opening part of the auxiliary pattern of the said light shielding film. This is because it is possible to simultaneously form three or more kinds of different members.

  The present invention also includes a photosensitive resin layer forming step of forming a photosensitive resin layer made of a photosensitive resin on a substrate, and exposing the photosensitive resin layer using a gradation mask, developing the photosensitive resin layer, and developing the photosensitive resin layer. A method for manufacturing a color filter having a different member forming step of simultaneously forming a plurality of different members made of a functional resin, wherein the gradation mask is formed in a pattern on the transparent substrate and the transparent substrate. A transparent region having only a transparent substrate, a light-shielding region in which the main pattern of the light-shielding film is provided on the transparent substrate, and the transparent substrate. Provided with an auxiliary pattern of the light shielding film and a pattern of the translucent film, and at least one of the auxiliary pattern of the light shielding film and the opening has a dimension less than or equal to a resolution limit. At down the opening to provide a method for manufacturing a color filter; and a third semi-transparent area in which the semi-transparent film on the transparent substrate is formed.

  According to the present invention, in the gradation mask, the auxiliary pattern of the light shielding film and the pattern of the semitransparent film are formed, and the semitransparent film is formed on the transparent substrate at the opening of the auxiliary pattern of the light shielding film. Since the translucent area is provided, the transmittance was not obtained when a light-shielding film such as a conventional slit mask was made into a slit, or when only a semi-transparent film such as a conventional gradation mask was formed. Can be achieved and the range of transmittance design is expanded. Therefore, in the present invention, by using such a gradation mask, it is easy to control the film thickness of the photosensitive resin layer, and members of various thicknesses and heights can be formed simultaneously.

  In the above-described invention, in the gradation mask, the semitransparent film may be formed over the entire third semitransparent region. This is because it is easy to pattern the translucent film in the third translucent region.

  In the gradation mask, the semitransparent film may be formed only in the opening of the auxiliary pattern of the light shielding film in the third semitransparent region.

  In the present invention, it is preferable that the gradation mask has a first translucent region in which only the main pattern of the translucent film is provided on the transparent substrate. When the gradation mask has a transmissive area, a light shielding area, a first semi-transparent area, and a second semi-transparent area, the transmittance changes stepwise in at least four stages. By exposure, three or more kinds of different members having different shapes, thicknesses, heights, and the like can be simultaneously formed. Furthermore, when manufacturing the gradation mask, the first translucent area and the second translucent area having different transmittances can be obtained by processing the translucent film into a predetermined pattern. Therefore, it is not necessary to repeatedly form and pattern the semitransparent film, and the gradation mask can be manufactured by a relatively simple process. Therefore, it can be said that such a gradation mask is useful for simultaneously forming three or more kinds of different members constituting the color filter.

  In the present invention, the gradation mask is provided with an auxiliary pattern of the light shielding film on the transparent substrate, and at least one of the auxiliary pattern of the light shielding film and the opening has a dimension that is not more than a resolution limit. The transparent substrate may have a fourth translucent region exposed at the opening of the auxiliary pattern of the light shielding film. This is because it is possible to simultaneously form three or more kinds of different members.

  Furthermore, in the present invention, in the gradation mask, the auxiliary pattern preferably has a slit shape.

  In order to achieve the above object, the present invention provides a photosensitive resin layer forming step of forming a photosensitive resin layer made of a photosensitive resin on a substrate, and exposing the photosensitive resin layer using a gradation mask. And developing a color filter having a different member forming step of simultaneously forming three or more different members made of the photosensitive resin, wherein the gradation mask includes a transparent substrate, the transparent mask, and the transparent mask. A light-shielding film formed in a pattern on a substrate and a translucent film having a transmittance adjusting function, and the pattern of the translucent film is a resolution limit in exposure in the main pattern and the different member forming step The slit pattern having the following slit width, the transparent region having only the transparent substrate, the light-shielding region in which the pattern of the light-shielding film is provided on the transparent substrate, and the translucent film on the transparent substrate A method for producing a color filter, comprising: a first semi-transparent region provided with only a main pattern; and a second semi-transparent region provided only with a slit pattern of the semi-transparent film on the transparent substrate. provide.

According to the present invention, the gradation mask has a transmissive region, a light shielding region, a first semi-transparent region, and a second semi-transparent region, and the transmittance changes stepwise in at least four stages. By the collective exposure used, three or more kinds of different members having different shapes, thicknesses, heights, and the like can be simultaneously formed.
Further, since the gradation mask is provided with the second semi-transparent region in which the slit pattern of the semi-transparent film is formed, it is possible to achieve the transmittance that was not obtained when the light shielding film was slit. , The breadth of transmittance design. Therefore, in the present invention, by using such a gradation mask, it is easy to control the film thickness of the photosensitive resin layer, and members of various thicknesses and heights can be formed simultaneously.
Furthermore, when manufacturing the gradation mask, the first translucent area and the second translucent area having different transmittances can be obtained by processing the translucent film into a predetermined pattern. Therefore, it is not necessary to repeatedly form and pattern the semitransparent film, and the gradation mask can be manufactured by a relatively simple process. Therefore, it can be said that the gradation mask used in the present invention is useful for simultaneously forming three or more kinds of different members constituting the color filter.

  In the above invention, the pattern of the light shielding film comprises a main pattern and a slit pattern having a slit width equal to or less than a resolution limit in exposure in the different member forming step, and the light shielding region is formed on the transparent substrate. A region where the main pattern of the light shielding film is provided, and the gradation mask further includes a third semitransparent region where the slit pattern of the light shielding film and the main pattern of the semitransparent film are provided on the transparent substrate. You may have. This is because four or more kinds of different members can be formed simultaneously.

  Furthermore, the present invention provides a color filter manufactured using the above-described color filter manufacturing method.

  In the present invention, since the gradation mask has a predetermined configuration, the range of transmittance design is widened. By using this gradation mask, the thickness and height of the member can be easily controlled. It is possible to simultaneously form members having thicknesses and heights.

It is process drawing which shows an example of the manufacturing method of the color filter of this invention. It is a figure for demonstrating the advantage of the manufacturing method of the color filter of this invention. It is process drawing which shows the other example of the manufacturing method of the color filter of this invention. It is process drawing which shows the other example of the manufacturing method of the color filter of this invention. It is process drawing which shows the other example of the manufacturing method of the color filter of this invention. It is process drawing which shows the other example of the manufacturing method of the color filter of this invention. It is process drawing which shows the other example of the manufacturing method of the color filter of this invention. It is a figure for demonstrating the sub pixel in a color filter. It is a schematic sectional drawing which shows an example of the gradation mask used for this invention. It is a schematic sectional drawing which shows the other example of the gradation mask used for this invention. It is a schematic sectional drawing which shows the other example of the gradation mask used for this invention. It is process drawing which shows an example of the manufacturing method of the gradation mask used for this invention. It is process drawing which shows the other example of the manufacturing method of the gradation mask used for this invention. 6 is a graph showing spectral spectra of semi-transparent films in Example 1 and Example 2. It is a figure for demonstrating the advantage of the manufacturing method of the color filter of this invention. It is a schematic diagram which shows the other example of the gradation mask used for this invention. It is a schematic diagram which shows an example of the auxiliary pattern of the translucent film | membrane in the gradation mask used for this invention. It is a schematic diagram which shows the other example of the auxiliary pattern of the translucent film | membrane in the gradation mask used for this invention. It is a schematic diagram which shows the other example of the auxiliary pattern of the translucent film | membrane in the gradation mask used for this invention. It is a schematic diagram which shows the other example of the auxiliary pattern of the translucent film | membrane in the gradation mask used for this invention. It is a schematic diagram which shows the other example of the gradation mask used for this invention. It is a schematic diagram which shows an example of the 3rd translucent area | region in the gradation mask used for this invention. It is a schematic diagram which shows the other example of the gradation mask used for this invention. It is a figure for demonstrating the advantage of the manufacturing method of the color filter of this invention. It is a schematic diagram which shows the other example of the gradation mask used for this invention. It is a schematic diagram which shows the other example of the gradation mask used for this invention. It is a schematic diagram which shows the other example of the gradation mask used for this invention. It is a graph which shows the spectrum of the semi-transparent film in Example 3 and Comparative Example 2.

  The color filter manufacturing method and color filter of the present invention will be described in detail below.

A. Color Filter Manufacturing Method The color filter manufacturing method of the present invention can be divided into three embodiments according to the configuration of the light shielding film pattern and the semitransparent film pattern in the gradation mask to be used. In the following, each embodiment will be described separately.

I. 1st embodiment 1st embodiment of the manufacturing method of the color filter of this invention is the photosensitive resin layer formation process which forms the photosensitive resin layer which consists of photosensitive resin on a board | substrate, The said photosensitive resin layer is a floor. A method of manufacturing a color filter having a different member forming step of simultaneously forming a plurality of different members made of the photosensitive resin by exposing and developing using a tone mask, wherein the gradation mask is transparent A substrate, a light-shielding film formed in a pattern on the transparent substrate, and a translucent film having a transmittance adjusting function, a transmission region having only the transparent substrate, and the light-shielding film on the transparent substrate. Only the light-shielding area provided with the main pattern and the auxiliary pattern of the semi-transparent film are provided on the transparent substrate, and at least one of the auxiliary pattern of the semi-transparent film and the opening is a dimension that is below the resolution limit And a second semi-transparent region having.

  In addition, below the resolution limit means below the resolution limit in exposure in a different member formation process.

The manufacturing method of the color filter of this embodiment is demonstrated referring drawings.
A gradation mask 101 illustrated in FIG. 15 has a light shielding film (123a, 123b) and a semitransparent film (124a, 124b) formed in a pattern on a transparent substrate. In the gradation mask 101, a transmission region 131 having only the transparent substrate 102, a light shielding region 132 in which a main pattern 123 a of a light shielding film is provided on the transparent substrate 102, and an auxiliary pattern 124 b of a semitransparent film on the transparent substrate 102. A region 134 where only the semi-transparent film main pattern 124a is provided on the transparent substrate 102, and a region 136 where the light shielding film auxiliary pattern 123b is provided on the transparent substrate 102. doing. In the region 134, the auxiliary pattern 124b of the translucent film has a dimension that is less than or equal to the resolution limit, and in the area 136, the auxiliary pattern 123b of the light shielding film has a dimension that is less than or equal to the resolution limit.

  A conventional slit mask has, for example, the transmission region 131, the light shielding region 132, and the region 136 described above. In such a conventional slit mask, the transmittance is different between the transmission region 131, the light shielding region 132, and the region 136. Therefore, the photoreaction (curing reaction, acid generation reaction) of the photosensitive resin layer depends on the transmittance of each region. ) (The curing reaction of the negative photosensitive resin in FIG. 15) differs, and by developing after exposure, a plurality of types of members 140a and 140d having different thicknesses can be formed simultaneously.

  However, in the case of a large mask used for manufacturing a display device, the line width of a fine pattern is limited to about 1.0 μm. For this reason, when the dimension of the auxiliary pattern 123b of the light shielding film cannot be further reduced in the region 136, transmission is performed so that a member having a thickness intermediate between the thickness of the member 140a and the thickness of the member 140d can be obtained. The rate cannot be adjusted.

  On the other hand, the gradation mask used in this embodiment has a second semi-transparent region provided with only the auxiliary pattern of the semi-transparent film, such as the region 134 described above. This translucent film has a transmittance adjusting function, has a higher transmittance than the light shielding film, and a lower transmittance than the transparent substrate. Therefore, by processing the translucent film into a fine pattern, it is possible to finely adjust the transmittance with respect to the transmittance of the transmissive region compared to processing the light shielding film into a fine pattern. is there. Therefore, by providing the second semi-transparent region where only the auxiliary pattern of the semi-transparent film is provided, the transmittance is adjusted so that the member 140b having a thickness intermediate between the thickness of the member 140a and the thickness of the member 140d can be obtained. Is possible.

  Further, the conventional gradation mask has, for example, the above-described transmission region 131, light shielding region 132, and region 133. In such a conventional gradation mask, since the transmittance is different between the transmission region 131, the light shielding region 132, and the region 133, the photoreaction (curing reaction, acid generation) of the photosensitive resin layer depends on the transmittance of each region. Reaction) (the curing reaction of the negative photosensitive resin in FIG. 15) varies, and by developing after exposure, a plurality of types of members 140a and 140c having different thicknesses can be formed simultaneously.

  The transmittance of the region 133 can be controlled by adjusting the thickness of the translucent film. For example, when the transmittance of the semitransparent film is relatively high, it is necessary to reduce the thickness of the semitransparent film. However, if the thickness of the semi-transparent film is too thin, the apparatus transport speed at the time of forming the semi-transparent film is increased, so that it is difficult to form a thin film stably in an apparatus. Thus, there is a problem when trying to make the transmissivity of the semitransparent film relatively high, and it is difficult to adjust the transmissivity so that a member having a thickness intermediate between the thickness of the member 140a and the thickness of the member 140c can be obtained. .

  On the other hand, as described above, the gradation mask used in this embodiment has the second semi-transparent region provided with only the auxiliary pattern of the semi-transparent film, such as the region 134 described above. This translucent film has a transmittance adjusting function, has a higher transmittance than the light shielding film, and a lower transmittance than the transparent substrate. Therefore, by processing the translucent film into a fine pattern, the transmissivity in the transmissive region is more subtle than in the case where the transmissivity is controlled only by the translucent film like a conventional gradation mask. It is possible to adjust the transmittance. Therefore, by providing the second semi-transparent region in which only the auxiliary pattern of the semi-transparent film is provided, the transmittance is adjusted so that the member 140b having a thickness intermediate between the thickness of the member 140a and the thickness of the member 140c can be obtained. Is possible.

  As described above, in this embodiment, it is possible to finely adjust the transmittance in the second semi-transparent region in the gradation mask, and it is possible to form a pattern having a thickness that cannot be formed conventionally. That is, in this embodiment, since a predetermined gradation mask having a wide transmittance design range is used, the thickness and height of the members can be easily controlled, and the thickness and height of various members can be easily set. It can be designed.

  In the present invention, the dissimilar member refers to a member that is different in at least one of thickness and height. The functions of the different members may be the same or different. Here, the thickness is the thickness of the member itself, and the height is the height from the substrate.

  Hereinafter, each process in the manufacturing method of the color filter of this embodiment is demonstrated. In addition, since it describes in a 3rd embodiment about a use, description here is abbreviate | omitted.

1. Photosensitive resin layer forming step The photosensitive resin layer forming step in this embodiment is a step of forming a photosensitive resin layer made of a photosensitive resin on a substrate.

  As the photosensitive resin used in the present embodiment, any of a negative photosensitive resin and a positive photosensitive resin can be used. Since the plurality of types of dissimilar members formed by the present embodiment are made of a photosensitive resin, the type of the photosensitive resin to be used is appropriately selected according to the dissimilar member to be formed. Among these, a negative photosensitive resin is preferably used. As described above, in the gradation mask used in this embodiment, it is possible to finely adjust the transmittance with respect to the transmissive region in the second translucent region. Therefore, in the exposure using such a gradation mask, a difference occurs in the curing reaction of the negative photosensitive resin depending on the light shielding region, the transmission region, and the second translucent region, so that the shape, thickness, height, etc. It is advantageous to form different dissimilar members.

Since the negative photosensitive resin and the positive photosensitive resin are described in a third embodiment to be described later, description thereof is omitted here.
Further, since other points of the photosensitive resin layer forming step are the same as those in the third embodiment, description thereof is omitted here.

2. Different member forming step In the present embodiment, the different member forming step is a step in which the photosensitive resin layer is exposed using a gradation mask and developed to simultaneously form a plurality of types of different members made of photosensitive resin. .
Hereinafter, a gradation mask and a method for forming different members will be described.

(1) Tone mask The tone mask used in this embodiment has a transparent substrate, a light-shielding film formed in a pattern on the transparent substrate, and a translucent film having a transmittance adjusting function, and A transmission region having only a transparent substrate, a light-shielding region in which the main pattern of the light-shielding film is provided on the transparent substrate, and only an auxiliary pattern of the semi-transparent film is provided on the transparent substrate. At least one of the auxiliary pattern and the opening has a second translucent region having a dimension that is less than or equal to the resolution limit.

  FIG. 16 is a schematic diagram showing an example of a gradation mask used in this embodiment. FIG. 16A is a cross-sectional view taken along the line AA in FIG. As illustrated in FIG. 16, the gradation mask 61 is obtained by forming a translucent film 64 and a light shielding film 63 in a pattern on a transparent substrate 62. In the gradation mask 61, a transmission region 71 having only a transparent substrate 62, a light shielding region 72 in which a main pattern 63 a of a light shielding film is provided on the transparent substrate 62, and a main pattern of a semitransparent film on the transparent substrate 62. The first semi-transparent region 73 provided with only 64a and the second semi-transparent region 74 provided only with the semi-transparent film auxiliary pattern 64b on the transparent substrate 62 are mixed. In the second semi-transparent region 74, the auxiliary pattern 64b and / or the opening 64c of the semi-transparent film has a dimension that is less than or equal to the resolution limit.

  Regarding the transmissivity characteristics, forming material, configuration, thickness, and film forming method of the semi-transparent film, the transmissivity characteristics of the light shielding film, forming material, thickness, film forming method, etc., and the transparent substrate and gradation mask manufacturing method Will be described in detail in the third embodiment, and a description thereof will be omitted here. Hereinafter, other configurations of the gradation mask used in this embodiment will be described.

(I) Second translucent region The second translucent region in the gradation mask used in this embodiment is provided with only the auxiliary pattern of the semitransparent film on the transparent substrate, and the auxiliary pattern of the translucent film and the opening At least one of these is a region having a dimension less than the resolution limit.

  The auxiliary pattern of the translucent film in the present embodiment has an opening, and the auxiliary pattern and / or the opening of the semitransparent film has a dimension that is less than the resolution limit. A semi-transparent film portion formed in a fine pattern in the region.

In the second semi-transparent region, the auxiliary pattern of the semi-transparent film may have a dimension that is less than or equal to the resolution limit, and the opening of the auxiliary pattern of the semi-transparent film may have a dimension that is less than or equal to the resolution limit. Both the auxiliary pattern of the film and the opening may have dimensions that are less than the resolution limit. This is appropriately selected according to the desired transmittance of the second translucent region. For example, when the auxiliary pattern of the semitransparent film has a dimension below the resolution limit, the transmittance should be increased compared to the case where the opening of the auxiliary pattern of the semitransparent film has a dimension below the resolution limit. Can do.
Especially, it is preferable that the auxiliary pattern of a semi-transparent film | membrane is a dimension below a resolution limit. As described above, the transmissivity can be further increased by setting the auxiliary pattern of the semitransparent film to be a fine pattern and having a dimension below the resolution limit rather than the opening of the auxiliary pattern of the semitransparent film. .

The shape of the auxiliary pattern of the translucent film is not particularly limited, and for example, a slit shape as shown in FIGS. , A polygonal dot shape as shown in FIGS. 19 (a) to 19 (e), a circular ring shape having a circular opening as shown in FIG. 20 (b), and FIGS. Various shapes such as a polygonal ring shape having a polygonal opening as shown in c) to (e) can be mentioned.
The shape of the opening of the auxiliary pattern of the semitransparent film includes various shapes similar to the shape of the auxiliary pattern of the semitransparent film.

  For example, when the shape of the auxiliary pattern of the translucent film is a slit or a dot, the auxiliary pattern of the semitransparent film may be a plurality of slits or dots arranged, or a single slit or dot. May be. The same applies to the case where the shape of the opening of the auxiliary pattern of the translucent film is slit or dot.

  In addition, as illustrated in FIGS. 17A to 17E and FIGS. 18A and 18B, when the auxiliary pattern 64b of the translucent film has a plurality of slits and dots arranged, The pitch is not particularly limited, and is appropriately adjusted according to the target transmittance of the second translucent region. The same applies to the case where the opening portion of the auxiliary pattern of the translucent film has a plurality of slits and dots arranged therein.

  In the second semi-transparent region in the gradation mask used in the third embodiment to be described later, the shape of the auxiliary pattern of the semi-transparent film is a slit shape, and the auxiliary pattern (slit pattern) of the semi-transparent film is resolved. It will have dimensions below the limit.

  As described above, the second translucent region is a region in which only the auxiliary pattern of the translucent film is provided on the transparent substrate. That is, the light-shielding film is not formed in the second semi-transparent region, and the main pattern of the semi-transparent film is not formed.

  In the second translucent region, there may be a plurality of regions in which at least one of the width and pitch of the auxiliary pattern of the translucent film is different. Thereby, further multi-gradation can be achieved.

  The transmittance of the second translucent region is not particularly limited as long as it is lower than the transmittance of the transmissive region, higher than the transmittance of the light shielding region, and higher than the transmittance of the first translucent region. It is appropriately selected depending on the pattern formed using the gradation mask used in the above.

  The size and shape of the second translucent region are not particularly limited, and are appropriately adjusted according to the application of the gradation mask used in this embodiment. For example, the shape of the second translucent region can be various shapes such as a circle, a rectangle, a frame, a polygon, and a line.

(Ii) First translucent region The gradation mask used in this embodiment preferably has a first translucent region in which only the main pattern of the translucent film is provided on the transparent substrate. In the gradation mask illustrated in FIG. 16, by transmitting the auxiliary pattern 64 b of the semitransparent film in the second semitransparent region 74, the transmission of each region of the transmission region 71, the light shielding region 72, and the first semitransparent region 73 is performed. The transmittance of the second translucent region 74 can be different with respect to the rate. Since the transmittance is different in the transmissive region, the light-shielding region, the first semi-transparent region, and the second semi-transparent region, the above-described gradation mask is a multi-gradation mask in which the transmittance changes stepwise in at least four stages. .

  In the first semi-transparent region, the semi-transparent film pattern is the main pattern of the semi-transparent film, and in the second semi-transparent region, the semi-transparent film pattern is the auxiliary pattern of the semi-transparent film processed into a fine pattern. is there. Therefore, the first translucent region and the second translucent region having different transmittances can be obtained by processing the translucent film into a predetermined pattern. Therefore, it is not necessary to repeatedly form and pattern a translucent film in order to increase the number of gradations, and a multiple gradation mask can be obtained by a relatively simple process.

  Furthermore, since the main pattern of the semitransparent film is formed in the first semitransparent region and the auxiliary pattern of the semitransparent film is formed in the second semitransparent region, the second translucent region is the first semitransparent region. The transmittance is higher than that of the transmission region, the light shielding region, the first semi-transparent region, and the second semi-transparent region. Therefore, when the photosensitive resin layer is exposed using the gradation mask, the degree of photoreaction (curing reaction, acid generation reaction) of the photosensitive resin layer varies depending on the transmittance of each region. By developing after exposure, three types of patterns having different thicknesses can be collectively formed. Therefore, it is suitable when three or more types of patterns are collectively formed.

  The main pattern of the translucent film in the gradation mask used in the present embodiment is a part of the translucent film that has a dimension equal to or larger than the resolution limit and is formed in the entire first translucent region. Say.

  The size and shape of the main pattern of the semi-transparent film are appropriately adjusted according to the size and shape of the first semi-transparent region, the light shielding region, and the third semi-transparent region.

  The first semi-transparent region is a region where only the main pattern of the semi-transparent film is provided on the transparent substrate. That is, the light-shielding film is not formed in the first semi-transparent region, and the auxiliary pattern of the semi-transparent film is not formed.

  The transmittance of the first translucent region is not particularly limited as long as it is lower than the transmittance of the transmissive region, higher than the transmittance of the light shielding region, and lower than the transmittance of the second translucent region. It is appropriately selected depending on the pattern formed using the gradation mask used in the above.

  The size and shape of the first translucent region are not particularly limited, and are appropriately adjusted according to the use of the gradation mask used in the present embodiment. For example, the shape of the first translucent region can be various shapes such as a circle, a rectangle, a frame, a polygon, and a line.

(Iii) Third translucent region The gradation mask used in this embodiment is provided with a light shielding film auxiliary pattern and a semitransparent film pattern on a transparent substrate, and at least one of the light shielding film auxiliary pattern and the opening. One of them may have a third translucent region having a dimension equal to or less than the resolution limit and having a translucent film formed on the transparent substrate at the opening of the auxiliary pattern of the light shielding film. Thereby, further multi-gradation can be achieved.

  As illustrated in FIG. 21, the third semi-transparent region 75 is provided with a light-shielding film auxiliary pattern 63 b and a semi-transparent film pattern (a semi-transparent film main pattern 64 a in FIG. 21) on the transparent substrate 62. This is a region in which the auxiliary pattern 63b and / or the opening 63c of the film has a dimension less than the resolution limit, and the translucent film 64 is formed on the transparent substrate 62 in the opening 63c of the auxiliary pattern of the light shielding film. Here, FIG. 21A is a cross-sectional view taken along the line BB of FIG.

  The auxiliary pattern of the light shielding film in the gradation mask used in the present embodiment has an opening, and the auxiliary pattern and / or the opening of the light shielding film has a dimension equal to or lower than the resolution limit. A portion of the light shielding film formed in a fine pattern in the third translucent region.

  In the third translucent region, the auxiliary pattern of the light shielding film and the pattern of the semitransparent film are provided on the transparent substrate, and the auxiliary pattern of the light shielding film and / or the opening has a dimension that is less than the resolution limit. If the translucent film is formed on the transparent substrate at the opening of the pattern, the pattern of the translucent film is not particularly limited. For example, as shown in FIGS. 22A to 22C, a semi-transparent film may be formed over the entire third semi-transparent region 75 to form a main pattern 64a of the semi-transparent film. ), (e), a semi-transparent film may be formed only in the opening 63c of the auxiliary pattern of the light-shielding film in the third semi-transparent region 75 to form the auxiliary pattern 64b of the semi-transparent film.

Note that the main pattern of the semitransparent film in the gradation mask used in this embodiment has a dimension equal to or greater than the resolution limit, and as described above, is formed in the entire semitransparent region. It refers not only to the transparent film portion but also to the semitransparent film portion formed over the entire third semitransparent region.
Further, the auxiliary pattern of the semitransparent film in the gradation mask used in the present embodiment has an opening, and the auxiliary pattern and / or the opening of the semitransparent film has a dimension that is less than the resolution limit. Yes, as described above, not only the part of the semitransparent film formed in a fine pattern in the second semitransparent region, but also the semitransparent film formed in a fine pattern in the third semitransparent region Also refers to the part.

  Further, the semi-transparent film is formed on the transparent substrate at the opening of the auxiliary pattern of the light shielding film, as shown in FIGS. 22 (a), (b), and (d). In addition to the case where a light-shielding film and a semi-transparent film are formed on the surface, and the semi-transparent film is formed on the transparent substrate at the opening of the auxiliary pattern of the light-shielding film, examples are shown in FIGS. A light-shielding film is formed on one surface of the transparent substrate, a semi-transparent film is formed on the other surface of the transparent substrate, and a semi-transparent film is formed on the transparent substrate at the opening of the auxiliary pattern of the light-shielding film. It is also included.

In the third translucent region, the auxiliary pattern of the light shielding film may have a dimension less than or equal to the resolution limit, and the opening of the auxiliary pattern of the light shielding film may have a dimension less than or equal to the resolution limit. Both the pattern and the opening may have dimensions that are less than the resolution limit. This is appropriately selected according to the transmittance of the target third translucent region. For example, in the case where the opening of the auxiliary pattern of the light shielding film has a dimension that is less than or equal to the resolution limit, the transmittance can be lowered compared to the case where the auxiliary pattern of the light shielding film has a dimension that is less than or equal to the resolution limit. .
Especially, it is preferable that the opening part of the auxiliary pattern of a light shielding film is a dimension below a resolution limit. This is because, as described above, the transmittance can be further lowered by setting the opening of the auxiliary pattern of the light shielding film to be a fine pattern and having a dimension below the resolution limit rather than the auxiliary pattern of the light shielding film.

  When the auxiliary pattern of the light shielding film has a dimension less than or equal to the resolution limit, the dimension of the auxiliary pattern of the light shielding film is not particularly limited as long as it is less than or equal to the resolution limit. It is adjusted appropriately according to the rate. Similarly, when the opening of the auxiliary pattern of the light shielding film has a dimension below the resolution limit, the dimension of the opening of the auxiliary pattern of the light shielding film is not particularly limited as long as it is below the resolution limit. It adjusts suitably according to the transmittance | permeability of the 3rd semi-transparent area | region.

Since the auxiliary pattern of the light shielding film and the shape of the opening are the same as the auxiliary pattern of the semitransparent film and the shape of the opening described in the section of the second semitransparent region, the description here Omitted.
The main pattern of the translucent film is the same as that described in the section of the first translucent area, and the auxiliary pattern and the opening of the translucent film are described in the section of the second translucent area. Since this is the same as that described above, description thereof is omitted here.

  In the third translucent region in the gradation mask used in the third embodiment to be described later, the shape of the auxiliary pattern of the light shielding film is a slit shape, and the auxiliary pattern (slit pattern) of the light shielding film is below the resolution limit. Further, a semitransparent film is formed over the entire third semitransparent region, and the pattern of the semitransparent film is the main pattern of the semitransparent film.

  The main pattern of the light shielding film is not formed in the third translucent region. As described above, when the translucent film is formed in the entire region of the third translucent area and the pattern of the translucent film is the main pattern of the translucent film, the translucent film is formed in the third translucent area. An auxiliary pattern is not formed. On the other hand, when the semi-transparent film is formed only in the opening of the auxiliary pattern of the light shielding film in the third semi-transparent area, and the semi-transparent film pattern is the auxiliary pattern of the semi-transparent film, the third semi-transparent area The main pattern of the semi-transparent film is not formed in.

  In the third translucent region, there may be a plurality of regions in which at least one of the width and the pitch of the light shielding auxiliary pattern is different. Thereby, further multi-gradation can be achieved.

  If the transmittance of the third translucent region is lower than the transmittance of the transmissive region, higher than the transmittance of the light shielding region, lower than the transmittance of the first translucent region, and lower than the transmittance of the second translucent region, The pattern is not limited and is appropriately selected depending on the pattern formed using the gradation mask used in this embodiment.

  The size and shape of the third translucent region are not particularly limited, and are appropriately adjusted according to the application of the gradation mask used in this embodiment. For example, the shape of the third translucent region can be various shapes such as a circle, a rectangle, a frame, a polygon, and a line.

(Iv) Fourth translucent region The gradation mask used in this embodiment is provided with a light shielding film auxiliary pattern on a transparent substrate, and at least one of the light shielding film auxiliary pattern and the opening is below the resolution limit. And a fourth semi-transparent region in which the transparent substrate is exposed at the opening of the auxiliary pattern of the light shielding film. Thereby, further multi-gradation can be achieved.

  As illustrated in FIG. 23, in the fourth translucent region 76, the auxiliary pattern 63b of the light shielding film is provided on the transparent substrate 62, and the auxiliary pattern 63b and / or the opening 63c of the light shielding film has a dimension less than the resolution limit. The transparent substrate 62 is exposed in the opening 63c of the auxiliary pattern of the light shielding film. Here, FIG. 23A is a cross-sectional view taken along the line CC of FIG.

  The auxiliary pattern of the light shielding film used in the present embodiment has an opening, and the auxiliary pattern and / or the opening of the light shielding film has a dimension that is less than the resolution limit. In addition, it refers not only to the portion of the light-shielding film formed in a fine pattern in the third semi-transparent region, but also to the portion of the light-shielding film formed in a fine pattern in the fourth semi-transparent region.

  In the fourth translucent region, the auxiliary pattern of the light shielding film may have a dimension less than or equal to the resolution limit, and the opening of the auxiliary pattern of the light shielding film may have a dimension less than or equal to the resolution limit. Both the pattern and the opening may have dimensions that are less than the resolution limit. This is appropriately selected according to the desired transmittance of the fourth translucent region. For example, in the case where the opening of the auxiliary pattern of the light shielding film has a dimension that is less than or equal to the resolution limit, the transmittance can be lowered compared to the case where the auxiliary pattern of the light shielding film has a dimension that is less than or equal to the resolution limit. .

  When the auxiliary pattern of the light shielding film has a dimension less than or equal to the resolution limit, the dimension of the auxiliary pattern of the light shielding film is not particularly limited as long as it is less than or equal to the resolution limit. It is adjusted appropriately according to the rate. Similarly, when the opening of the auxiliary pattern of the light shielding film has a dimension below the resolution limit, the dimension of the opening of the auxiliary pattern of the light shielding film is not particularly limited as long as it is below the resolution limit. It adjusts suitably according to the transmittance | permeability of a 4th translucent area | region.

  Since the auxiliary pattern of the light shielding film and the shape of the opening are the same as the auxiliary pattern of the semitransparent film and the shape of the opening described in the section of the second semitransparent region, the description here Omitted.

  Further, the transparent substrate is exposed at the opening portion of the auxiliary pattern of the light shielding film, as shown in FIG. 23, both surfaces of the transparent substrate 62 are exposed at the opening portion 63c of the auxiliary pattern of the light shielding film. If you are. For example, as shown in FIGS. 22C and 22E, the case where only one surface of the transparent substrate 62 is exposed at the opening 63c of the auxiliary pattern of the light shielding film is not included.

  In the fourth translucent region, an auxiliary pattern of the light shielding film is provided on the transparent substrate, and at least one of the auxiliary pattern of the light shielding film and the opening has a dimension less than or equal to the resolution limit, and the opening of the auxiliary pattern of the light shielding film If the transparent substrate is exposed at the part, a pattern of a semitransparent film may be formed on the transparent substrate. For example, as shown in FIG. 23, a semi-transparent film auxiliary pattern 64b may be formed in the fourth semi-transparent region 76 at the same position as the light-shielding film auxiliary pattern 63b.

  The semi-transparent film auxiliary pattern in the gradation mask used in the present embodiment has an opening, and the semi-transparent film auxiliary pattern and / or the opening has a dimension less than the resolution limit. Yes, as described above, only the part of the semi-transparent film formed in a fine pattern in the second semi-transparent region and the part of the semi-transparent film formed in a fine pattern in the third semi-transparent region Instead, it also refers to the part of the translucent film formed in a fine pattern within the fourth translucent region.

  Since the auxiliary pattern and the opening of the semitransparent film are the same as those described in the section of the second semitransparent region, description thereof is omitted here.

  In the fourth translucent region in the gradation mask used in the third embodiment to be described later, the shape of the auxiliary pattern of the light shielding film is a slit shape, and the auxiliary pattern (slit pattern) of the light shielding film is below the resolution limit. It has the dimension of.

  In the fourth translucent region, the main pattern of the light shielding film and the main pattern of the semitransparent film are not formed.

  In the fourth translucent region, there may be a plurality of regions in which at least one of the width and pitch of the light shielding auxiliary pattern is different. Thereby, further multi-gradation can be achieved.

  If the transmittance of the fourth translucent region is lower than the transmittance of the transmissive region, higher than the transmittance of the light shielding region, lower than the transmittance of the first translucent region, and lower than the transmittance of the second translucent region, The pattern is not limited and is appropriately selected depending on the pattern formed using the gradation mask used in this embodiment.

  The size and shape of the fourth translucent region are not particularly limited, and are appropriately adjusted according to the use of the gradation mask used in this embodiment. For example, the shape of the fourth translucent region can be various shapes such as a circle, a rectangle, a frame, a polygon, and a line.

(V) Light-shielding region The light-shielding region in the gradation mask used in this embodiment is a region where a main pattern of a light-shielding film is provided on a transparent substrate.
In addition, the main pattern of the light shielding film in this embodiment has a dimension equal to or greater than the resolution limit and refers to a portion of the light shielding film formed over the entire light shielding region.

  In the light shielding region, it is only necessary that at least the main pattern of the light shielding film is formed on the transparent substrate.For example, only the main pattern of the light shielding film may be formed, and the main pattern of the light shielding film and the pattern of the semitransparent film are included. It may be formed. In this case, the pattern of the translucent film is not particularly limited.

  The size and shape of the light shielding region are not particularly limited, and are appropriately adjusted according to the application of the gradation mask used in this embodiment. For example, the shape of the light shielding region can be various shapes such as a circle, a rectangle, a frame, a polygon, and a line.

(Vi) Transmission region The transmission region in the gradation mask used in this embodiment is a region having only a transparent substrate. That is, neither the light-shielding film nor the translucent film is formed in the transmission region.

  The size and shape of the transmissive region are not particularly limited, and are appropriately adjusted according to the application of the gradation mask used in this embodiment. For example, the shape of the transmission region can be various shapes such as a circle, a rectangle, a frame, a polygon, and a line.

(Vii) Gradation mask The gradation mask used in the present embodiment is obtained by forming a light shielding film and a semitransparent film in a pattern on a transparent substrate. What is necessary is just to have an area | region etc., As a lamination order of a transparent substrate, a light shielding film, and a semi-transparent film | membrane, it does not specifically limit. For example, the transparent substrate, the light shielding film and the semi-transparent film may be laminated in this order, the transparent substrate, the semi-transparent film and the light shielding film may be laminated in this order, or the semi-transparent film, the transparent substrate and the light shielding film may be laminated in this order. May be.

In this embodiment, a low reflection layer may be formed on the light shielding film. This is because by providing the low reflection layer, halation can be prevented when the gradation mask is used.
In addition, since it describes in the 3rd embodiment mentioned later about a low reflection layer, description here is abbreviate | omitted.

  The gradation mask used in this embodiment has a transmittance that changes in three steps or more. The gradation mask is not limited to a three-gradation gradation mask, but can be changed to three gradations or more by periodically changing the size of the auxiliary pattern or the opening of the semi-transparent film in the second semi-transparent region. It is possible to use a multi-tone gradation mask.

  In the present embodiment, a multi-tone mask having four or more tones can be obtained by combining the main pattern and auxiliary pattern of the translucent film and the auxiliary pattern of the light shielding film. For example, as shown in FIGS. 21 and 23, the gradation mask 61 includes a first translucent area 73, a third translucent area 75, a first translucent area 74, a light shielding area 72, and a second translucent area 74. By having the four translucent regions 76, it is possible to increase the number of gradations. In this case, the gradation mask may include, for example, a transmissive region, a light-shielding region, a second semi-transparent region, and a first semi-transparent region, and the transmissive region, the light-shielding region, the second semi-transparent region, and the first semi-transparent region. It may have a transparent region and a third semi-transparent region, and may have a transmissive region, a light-shielding region, a second semi-transparent region, and a fourth semi-transparent region. A translucent region, a fourth translucent region, and a third translucent region may be included, and a transmissive region, a light shielding region, a second translucent region, a first translucent region, a fourth translucent region, and a third semitransparent region may be included. It may have a transparent region.

  The use and size of the gradation mask will be described in a third embodiment to be described later, and will not be described here.

(2) Method for forming different members In this embodiment, a plurality of different members made of a photosensitive resin can be formed simultaneously.

  As a kind of different member, there may be two or more kinds, two kinds, or three or more kinds. Examples of the different types of members formed according to this embodiment include various members formed through an exposure process. As the plural types of dissimilar members that can be formed, any member that can be formed using a photosensitive resin may be used, but among them, it is preferable to include dissimilar members having slightly different thicknesses and heights. Specifically, (1) spacers having different thicknesses, (2) transmissive portion alignment control protrusions and reflective portion alignment control protrusions, (3) alignment control protrusions and light shielding portions, and (4) RGB overcoat layers And an overcoat layer for W.

Note that three or more types of dissimilar members that can be formed can be the same as those in the third embodiment described later, and thus the description thereof is omitted here.
In addition, since other points of the method for forming the dissimilar member are the same as those in the third embodiment, description thereof is omitted here.

3. Other Steps In this embodiment, a step of forming various members in the color filter can be performed as necessary before the photosensitive resin layer forming step or after the different member forming step.
The other steps are the same as those in the third embodiment, and a description thereof is omitted here.

II. Second Embodiment A second embodiment of the method for producing a color filter of the present invention includes a photosensitive resin layer forming step of forming a photosensitive resin layer made of a photosensitive resin on a substrate, and the photosensitive resin layer. A method of manufacturing a color filter having a different member forming step of simultaneously forming a plurality of different members made of the photosensitive resin by exposing and developing using a tone mask, wherein the gradation mask is transparent A substrate, a light-shielding film formed in a pattern on the transparent substrate, and a translucent film having a transmittance adjusting function, a transmission region having only the transparent substrate, and the light-shielding film on the transparent substrate. A light shielding region provided with a main pattern, and an auxiliary pattern of the light shielding film and a pattern of the translucent film are provided on the transparent substrate, and at least one of the auxiliary pattern of the light shielding film and the opening. And a third semi-transparent region in which the translucent film is formed on the transparent substrate at the opening of the auxiliary pattern of the light-shielding film. is there.

  In addition, below the resolution limit means below the resolution limit in exposure in a different member formation process.

The manufacturing method of the color filter of this embodiment is demonstrated referring drawings.
A gradation mask 101 illustrated in FIG. 24 is obtained by forming a light shielding film (123a, 123b) and a semitransparent film (124a) in a pattern on a transparent substrate. In the gradation mask 101, a transmission region 131 having only the transparent substrate 102, a light shielding region 132 in which a main pattern 123a of the light shielding film is provided on the transparent substrate 102, an auxiliary pattern 123b of the light shielding film on the transparent substrate 102, and A region 135 in which the main pattern 124a of the semitransparent film is provided, a region 133 in which only the main pattern 124a of the semitransparent film is provided on the transparent substrate 102, and an auxiliary pattern 123b of the light shielding film is provided on the transparent substrate 102. Area 136 is mixed. In the region 135, the opening 123c of the auxiliary pattern of the light shielding film has a dimension less than or equal to the resolution limit, and in the region 136, the opening 123c of the auxiliary pattern of the light shielding film has a dimension less than or equal to the resolution limit.

  A conventional slit mask has, for example, the transmission region 131, the light shielding region 132, and the region 136 described above. In such a conventional slit mask, the transmittance is different between the transmission region 131, the light shielding region 132, and the region 136. Therefore, the photoreaction (curing reaction, acid generation reaction) of the photosensitive resin layer depends on the transmittance of each region. ) (Acid generation reaction of the positive photosensitive resin in FIG. 24) is different, and by developing after exposure, a plurality of types of members 140a and 140d having different thicknesses can be formed simultaneously.

  However, in the case of a large mask used for manufacturing a display device, the line width of a fine pattern is limited to about 1.0 μm. For this reason, when the dimension of the opening of the auxiliary pattern of the light shielding film cannot be further reduced in the region 136, a member having a thickness intermediate between the thickness of the member 140a and the thickness of the member 140d can be obtained. The transmittance cannot be adjusted.

  On the other hand, the gradation mask used in this embodiment is provided with a light shielding film auxiliary pattern and a semitransparent film pattern as in the above-described region 135, and a transparent substrate is formed at the opening of the light shielding film auxiliary pattern. A third translucent region having a translucent film formed thereon is provided. This translucent film has a transmittance adjusting function, has a higher transmittance than the light shielding film, and a lower transmittance than the transparent substrate. For this reason, the light shielding film is processed into a fine pattern, and a semi-transparent film is formed in the opening of the light shielding film. It is possible to finely adjust the transmittance with respect to the transmittance. Therefore, the auxiliary pattern of the light shielding film and the pattern of the semitransparent film are provided, and the member is provided by providing the third semitransparent region in which the semitransparent film is formed on the transparent substrate at the opening of the auxiliary pattern of the light shielding film. It is possible to adjust the transmittance so as to obtain a member 140e having a thickness between the thickness of 140a and the thickness of the member 140d.

  Further, the conventional gradation mask has, for example, the above-described transmission region 131, light shielding region 132, and region 133. In such a conventional gradation mask, since the transmittance is different between the transmission region 131, the light shielding region 132, and the region 133, the photoreaction (curing reaction, acid generation) of the photosensitive resin layer depends on the transmittance of each region. (Reaction) (Acid generation reaction of positive photosensitive resin in FIG. 24) is different, and by developing after exposure, a plurality of types of members 140a and 140c having different thicknesses can be formed simultaneously.

  The transmittance of the region 133 can be controlled by adjusting the thickness of the translucent film. For example, when the transmittance of the semitransparent film is relatively low, it is necessary to increase the thickness of the semitransparent film. However, if the thickness of the translucent film is too thick and the transmissivity of the translucent film is too low, the ratio of the transmissivity with respect to the film thickness distribution increases, so that the substantial transmissivity distribution deteriorates. As described above, there is a problem when the transmittance of the translucent film is relatively low, and it is difficult to adjust the transmittance so that a member having a thickness intermediate between the thickness of the member 140a and the thickness of the member 140c can be obtained. is there.

  On the other hand, as described above, the gradation mask used in the present embodiment is provided with the auxiliary pattern of the light shielding film and the pattern of the semitransparent film as in the region 135 described above, and the opening of the auxiliary pattern of the light shielding film. A third translucent region in which a translucent film is formed on the transparent substrate. This translucent film has a transmittance adjusting function, has a higher transmittance than the light shielding film, and a lower transmittance than the transparent substrate. For this reason, the light-shielding film is processed into a fine pattern, and a translucent film is formed in the opening of the light-shielding film, so that the transmittance is controlled only with a semi-transparent film like a conventional gradation mask. Thus, it is possible to finely adjust the transmittance with respect to the transmittance of the light shielding region. Therefore, by providing the second semi-transparent region in which only the auxiliary pattern of the semi-transparent film is provided, the transmittance is adjusted so that the member 140e having a thickness intermediate between the thickness of the member 140a and the thickness of the member 140c can be obtained. Is possible.

  As described above, in this embodiment, it is possible to finely adjust the transmittance in the third semi-transparent region in the gradation mask, and it is possible to form a pattern having a thickness that cannot be formed conventionally. That is, in this embodiment, since a predetermined gradation mask having a wide transmittance design range is used, the thickness and height of the members can be easily controlled, and the thickness and height of various members can be easily set. It can be designed.

  In the present invention, the dissimilar member refers to a member that is different in at least one of thickness and height. The functions of the different members may be the same or different. Here, the thickness is the thickness of the member itself, and the height is the height from the substrate.

  Hereinafter, each process in the manufacturing method of the color filter of this invention is demonstrated. In addition, since it describes in detail in the 3rd embodiment mentioned later about an application, description here is abbreviate | omitted.

1. Photosensitive resin layer forming step The photosensitive resin layer forming step in this embodiment is a step of forming a photosensitive resin layer made of a photosensitive resin on a substrate.

  As the photosensitive resin used in the present embodiment, any of a negative photosensitive resin and a positive photosensitive resin can be used. Since the plurality of types of dissimilar members formed by the present embodiment are made of a photosensitive resin, the type of the photosensitive resin to be used is appropriately selected according to the dissimilar member to be formed. Of these, positive photosensitive resins are preferably used. As described above, in the gradation mask used in this embodiment, it is possible to finely adjust the transmittance with respect to the light shielding region in the third translucent region. Therefore, in the exposure using such a gradation mask, the acid generation reaction of the positive photosensitive resin varies depending on the light shielding region, the transmission region, and the third translucent region, so that the shape, thickness, height, etc. It is advantageous to form different kinds of members.

Since the negative photosensitive resin and the positive photosensitive resin are described in a third embodiment to be described later, description thereof is omitted here.
Further, since other points of the photosensitive resin layer forming step are the same as those in the third embodiment, description thereof is omitted here.

2. Different member forming step In the present embodiment, the different member forming step is a step in which the photosensitive resin layer is exposed using a gradation mask and developed to simultaneously form a plurality of types of different members made of photosensitive resin. .
Hereinafter, a gradation mask and a method for forming different members will be described.

(1) Tone mask The tone mask used in this embodiment has a transparent substrate, a light-shielding film formed in a pattern on the transparent substrate, and a translucent film having a transmittance adjusting function, and A transmission region having only a transparent substrate, a light shielding region in which the main pattern of the light shielding film is provided on the transparent substrate, an auxiliary pattern of the light shielding film and a pattern of the semitransparent film are provided on the transparent substrate, At least one of the auxiliary pattern of the light shielding film and the opening has a dimension that is not more than a resolution limit, and the semitransparent film is formed on the transparent substrate at the opening of the auxiliary pattern of the light shielding film. And three translucent regions.

  FIG. 25 is a schematic diagram showing an example of a gradation mask used in this embodiment. FIG. 25A is a cross-sectional view taken along the line DD in FIG. As illustrated in FIG. 25, the gradation mask 61 is obtained by forming a translucent film 64 and a light shielding film 63 on a transparent substrate 62 in a pattern. In the gradation mask 61, a transmission region 71 having only a transparent substrate 62, a light shielding region 72 in which a main pattern 63 a of a light shielding film is provided on the transparent substrate 62, and a main pattern of a semitransparent film on the transparent substrate 62. A first semi-transparent region 73 provided with only 64a, and a third light-shielding film auxiliary pattern 63b and a semi-transparent film pattern (semi-transparent film main pattern 64a in FIG. 25) provided on the transparent substrate 62. A semi-transparent region 75 is mixed. In the third translucent region 75, the auxiliary pattern 63b and / or the opening 63c of the light-shielding film has a dimension that is less than the resolution limit.

  Regarding the transmissivity characteristics, forming material, configuration, thickness, and film forming method of the semi-transparent film, the transmissivity characteristics of the light shielding film, forming material, thickness, film forming method, etc., and the transparent substrate and gradation mask manufacturing method Will be described in detail in the third embodiment, and a description thereof will be omitted here. Further, since the light shielding region and the transmissive region are the same as those described in the first embodiment, description thereof is omitted here. Hereinafter, other configurations of the gradation mask used in this embodiment will be described.

(I) Third Semi-Transparent Area The third semi-transparent area in the gradation mask used in the present embodiment is provided with a light-shielding film auxiliary pattern and a semi-transparent film pattern on a transparent substrate. In this region, at least one of the openings has a dimension equal to or smaller than the resolution limit, and the semitransparent film is formed on the transparent substrate at the opening of the auxiliary pattern of the light shielding film.
The third translucent region is the same as that described in the first embodiment, and a description thereof is omitted here.

(Ii) First Translucent Area As shown in FIG. 25, the gradation mask used in this embodiment is a first translucent area 73 in which only a main pattern 64a of a semitransparent film is provided on a transparent substrate 62. It is preferable to have. In the gray scale mask illustrated in FIG. 25, the auxiliary pattern of the light-shielding film and the pattern of the semi-transparent film are arranged in the third semi-transparent region, whereby the transmission of each region of the transmission region, the light-shielding region and the first semi-transparent region The transmittance of the third translucent region can be different from the rate. Since the transmittance is different between the transmissive region, the light-shielding region, the first semi-transparent region, and the third semi-transparent region, the above-described gradation mask is a multi-gradation mask in which the transmittance changes stepwise in at least four stages. .

  A main pattern of a light shielding film is provided in the light shielding region, a main pattern of a semitransparent film is provided in the first semitransparent region, and an auxiliary pattern of the light shielding film and a semitransparent film are provided in the third semitransparent region. A pattern is provided. Therefore, by processing the light-shielding film and the semi-transparent film into predetermined patterns, it is possible to obtain a light-shielding area, a first semi-transparent area, and a third semi-transparent area having different transmittances. Therefore, it is not necessary to repeatedly form and pattern a translucent film in order to increase the number of gradations, and a multiple gradation mask can be obtained by a relatively simple process.

  Further, since the main pattern of the semi-transparent film is formed in the first semi-transparent region, and the auxiliary pattern of the light shielding film and the pattern of the semi-transparent film are formed in the third semi-transparent region, the third semi-transparent region is The transmittance is lower than that of the first translucent region, and the transmissivity is different between the transmissive region, the light shielding region, the first translucent region, and the third translucent region. Therefore, when the photosensitive resin layer is exposed using the gradation mask, the degree of the photoreactive photoreaction (curing reaction, acid generation reaction) of the photosensitive resin layer varies depending on the transmittance of each region. Thus, by developing after exposure, three types of patterns having different thicknesses can be collectively formed. Therefore, it is suitable when three or more types of patterns are collectively formed.

  The first translucent region is the same as that described in the first embodiment, and a description thereof is omitted here.

(Iii) Second Translucent Area As shown in FIG. 26, the gradation mask used in this embodiment is provided with only the semitransparent film auxiliary pattern 64b on the transparent substrate 62, and the semitransparent film auxiliary pattern. At least one of 64b and the opening 64c may have a second translucent region 74 having a dimension that is less than or equal to the resolution limit. Here, FIG. 26 (a) is a cross-sectional view taken along the line EE of FIG. 26 (b). Thereby, further multi-gradation can be achieved.
The second translucent region is the same as that described in the first embodiment, and a description thereof is omitted here.

(Iv) Fourth Translucent Area As shown in FIG. 27, the gradation mask used in this embodiment is provided with a light shielding film auxiliary pattern 63b on a transparent substrate 62, and the light shielding film auxiliary pattern 63b and the opening. At least one of the portions 63c may have a fourth translucent region 76 having a dimension that is less than or equal to the resolution limit and in which the transparent substrate 62 is exposed at the opening 63c of the auxiliary pattern of the light shielding film. Here, Fig.27 (a) is the FF sectional view taken on the line of FIG.27 (b). Thereby, further multi-gradation can be achieved.
The fourth translucent region is the same as that described in the first embodiment, and a description thereof is omitted here.

(V) Tone mask The tone mask used in the present embodiment is obtained by forming a light-shielding film and a semi-transparent film in a pattern on a transparent substrate, and the above-described transmission region, light-shielding region, and third semi-transparency. What is necessary is just to have an area | region etc., As a lamination order of a transparent substrate, a light shielding film, and a semi-transparent film | membrane, it does not specifically limit. For example, the transparent substrate, the light shielding film and the semi-transparent film may be laminated in this order, the transparent substrate, the semi-transparent film and the light shielding film may be laminated in this order, or the semi-transparent film, the transparent substrate and the light shielding film may be laminated in this order. May be.

In this embodiment, a low reflection layer may be formed on the light shielding film. This is because by providing the low reflection layer, halation can be prevented when the gradation mask is used.
In addition, since it describes in the 3rd embodiment mentioned later about a low reflection layer, description here is abbreviate | omitted.

  The gradation mask used in this embodiment has a transmittance that changes in three steps or more. The gradation mask is not limited to a three-gradation gradation mask, but can be changed to three gradations or more by periodically changing the size of the auxiliary pattern or opening of the semi-transparent film in the third semi-transparent region. It is possible to use a multi-tone gradation mask.

  In the present embodiment, a multi-tone mask having four or more tones can be obtained by combining the main pattern and auxiliary pattern of the translucent film and the auxiliary pattern of the light shielding film. For example, as shown in FIGS. 26 and 27, the gradation mask 61 includes a first translucent area 73, a second translucent area 74, a first translucent area 75, a light-shielding area 72, and a third translucent area 75. By having the four translucent regions 76, it is possible to increase the number of gradations. In this case, the gradation mask may include, for example, a transmissive region, a light-shielding region, a third semi-transparent region, and a first semi-transparent region, and the transmissive region, the light-shielding region, the third semi-transparent region, and the first semi-transparent region. It may have a transparent region and a second semi-transparent region, and may have a transmissive region, a light-shielding region, a third semi-transparent region, and a fourth semi-transparent region. A translucent region, a fourth translucent region, and a second translucent region may be included, and a transmissive region, a light shielding region, a third translucent region, a first translucent region, a fourth translucent region, and a second semitransparent region may be included. It may have a transparent region.

  The use and size of the gradation mask will be described in a third embodiment to be described later, and will not be described here.

(2) Method for forming different members In this embodiment, a plurality of different members made of a photosensitive resin can be formed simultaneously.

  As a kind of different member, there may be two or more kinds, two kinds, or three or more kinds. Examples of the different types of members formed according to this embodiment include various members formed through an exposure process. As the plural types of dissimilar members that can be formed, any member that can be formed using a photosensitive resin may be used, but among them, it is preferable to include dissimilar members having slightly different thicknesses and heights. Specifically, (1) spacers having different thicknesses, (2) transmissive portion alignment control protrusions and reflective portion alignment control protrusions, (3) alignment control protrusions and light shielding portions, and (4) RGB overcoat layers And an overcoat layer for W.

Note that three or more types of dissimilar members that can be formed can be the same as those in the third embodiment described later, and thus the description thereof is omitted here.
In addition, since other points of the method for forming the dissimilar member are the same as those in the third embodiment, description thereof is omitted here.

3. Other Steps In this embodiment, a step of forming various members in the color filter can be performed as necessary before the photosensitive resin layer forming step or after the different member forming step.
The other steps are the same as those in the third embodiment, and a description thereof is omitted here.

III. Third Embodiment A third embodiment of the method for producing a color filter of the present invention includes a photosensitive resin layer forming step of forming a photosensitive resin layer made of a photosensitive resin on a substrate, and the photosensitive resin layer. A method for producing a color filter having a different member forming step of simultaneously forming three or more different members made of the photosensitive resin by exposing and developing using a tone mask, wherein the gradation mask comprises: A transparent substrate, a light-shielding film formed in a pattern on the transparent substrate, and a translucent film having a transmittance adjusting function. The pattern of the translucent film is a main pattern and the dissimilar member forming step. A slit pattern having a slit width less than or equal to a resolution limit in the exposure of the first, the transparent area having only the transparent substrate, the light-shielding area in which the pattern of the light-shielding film is provided on the transparent substrate, and the transparent pattern. A first translucent region in which only the main pattern of the translucent film is provided on a bright substrate; and a second translucent region in which only the slit pattern of the translucent film is provided on the transparent substrate. It is a feature.

A method for producing a color filter of the present invention will be described with reference to the drawings.
FIG. 1 is an example of forming spacers and alignment control protrusions having different thicknesses in a color filter according to the present invention. First, as shown in FIG. 1A, a light shielding portion 2 and a colored layer 3 are formed on a substrate 1, a transparent electrode layer 4 is formed on the colored layer 3, and a negative type is formed on the transparent electrode layer 4. A photosensitive resin layer 5 made of a photosensitive resin is formed. Next, as shown in FIG. 1B, the photosensitive resin layer 5 is exposed through the gradation mask 11.

  The gradation mask 11 is obtained by forming a light shielding film 13 and a semitransparent film 14 in a pattern on a transparent substrate 12. The pattern of the translucent film 14 is composed of a main pattern 14a and a slit pattern 14b having a slit width equal to or less than the resolution limit. In the gradation mask 11, a transmission region 21 having only the transparent substrate 12, a light shielding region 22 in which the pattern of the light shielding film 13 and the main pattern 14 a of the semitransparent film are provided on the transparent substrate 12, and the transparent substrate 12. The first semitransparent region 23 in which only the main pattern 14a of the semitransparent film is provided and the second semitransparent region 24 in which only the slit pattern 14b of the semitransparent film is provided on the transparent substrate 12 are mixed.

  In the transmission region 21 of the gradation mask 11, the exposure light passes through the transparent substrate 12 as it is. In the first translucent region 23, since the translucent film 14 has a transmittance adjusting function, the exposure light is transmitted with a predetermined transmittance. Further, in the second semi-transparent region 24, the slit pattern 14b of the semi-transparent film is formed with a slit width equal to or less than the resolution limit, so that the exposure light is transmitted with a higher transmittance than the first semi-transparent region 23. . Further, in the light shielding region 22, the light shielding film does not substantially transmit the exposure light, and therefore does not transmit the exposure light. As described above, in the gradation mask 11, the transmittance of the exposure light is different between the transmissive region 21, the first semi-transparent region 23, the second semi-transparent region 24, and the light-shielding region 22. Thus, the degree of the curing reaction of the photosensitive resin layer is different, and development is performed after exposure to form three different kinds of members (high spacer 31a, low spacer 31b, and alignment control protrusion 31c) having different shapes and thicknesses. Is done.

  In the gradation mask used in the present invention, the semi-transparent film main pattern is arranged in the first semi-transparent region, and the semi-transparent film slit pattern is formed in the second semi-transparent region. The transmittance differs between the region and the second translucent region. Since the transmittance is different between the transmissive region, the light shielding region, the first semi-transparent region, and the second semi-transparent region, the gradation mask is a multi-tone mask in which the transmittance changes stepwise in at least four stages. In the present invention, by using such a predetermined gradation mask, three or more kinds of different members constituting the color filter can be simultaneously formed by one exposure.

In addition, since the color filter manufacturing method of the present invention uses a predetermined gradation mask, it has an advantage that the thickness and height of the member can be easily controlled.
A gradation mask 101 illustrated in FIG. 2 is obtained by forming a light shielding film 103 and a semitransparent film 104 in a pattern on a transparent substrate 102. The pattern of the light shielding film 103 is composed of a main pattern 103a and a slit pattern 103b having a slit width less than or equal to the resolution limit. Similarly, the pattern of the translucent film 104 is less than or equal to the main pattern 104a and less than the resolution limit. The slit pattern 104b has a slit width. In the gradation mask 101, a transmissive region 111 having only the transparent substrate 102, a light shielding region 112 in which the main pattern 103 a of the light shielding film is provided on the transparent substrate 102, and a slit pattern 103 b of the light shielding film on the transparent substrate 102. One first region 113 provided, one second region 114 provided with three light-shielding film slit patterns 103b on the transparent substrate 102, and one semi-transparent film slit pattern 104b provided on the transparent substrate 102 The third region 115 is mixed with the fourth region 116 in which the main pattern 104a of the semitransparent film and the slit pattern 103b of the light shielding film are provided on the transparent substrate 102.

  In the conventional slit mask, the transmittance can be adjusted by changing the slit width and pitch of the slit pattern 103 b of the light shielding film as in the first region 113 and the second region 114. For this reason, in addition to the transmissive region 111 and the light shielding region 112, by providing regions where the slit pattern of the light shielding film, such as the first region 113 and the second region 114, is provided, the number of gradations is increased. In the example shown in FIG. 2, the transmission region 111, the first region 113, and the second region 114 have different transmittances. Therefore, the degree of the curing reaction of the photosensitive resin layer varies depending on the transmittance of each region. By developing after exposure, three types of patterns 130a, 130b and 130c having different thicknesses can be formed simultaneously.

  However, in the case of a large mask used for manufacturing a display device, the line width of a fine pattern is limited to about 1.0 μm. For this reason, when the slit width of the slit pattern 103b of the light shielding film cannot be further reduced in the first region 113, a pattern having a thickness intermediate between the thickness of the pattern 130a and the thickness of the pattern 130b is obtained. The transmittance cannot be adjusted. Similarly, when the slit width of the slit pattern 103b of the light shielding film cannot be further reduced in the second region 114, and the pitch of the slit pattern 103b of the light shielding film cannot be reduced further, the pattern The transmittance cannot be adjusted so that a pattern thinner than 130c can be obtained.

  On the other hand, since the gradation mask used in the present invention has the second semi-transparent region provided with only the semi-transparent film slit pattern, for example, a third semi-transparent film slit pattern 104b is formed. By providing the region 115 (second translucent region), the transmittance can be adjusted so that a pattern 130d having a thickness intermediate between the thickness of the pattern 130a and the thickness of the pattern 130b can be obtained. The gradation mask used in the present invention may have a third semi-transparent region provided with a slit pattern of a light shielding film and a main pattern of a semi-transparent film. In addition, by providing the fourth region 116 (third translucent region) where the slit pattern 103b of the light shielding film is formed, the transmittance can be adjusted so that a pattern 130e thinner than the thickness of the pattern 130c can be obtained. is there.

  As described above, in the present invention, it is possible to finely adjust the transmittance in each region of the gradation mask, and it is possible to form a pattern having a thickness that cannot be formed conventionally. That is, in the present invention, since a predetermined gradation mask having a wide range of transmittance design is used, the thickness and height of the member can be easily controlled, and the thickness and height of various members can be easily designed. can do.

  In the present invention, since three or more kinds of different members can be formed simultaneously by one exposure, it is possible to share materials, reduce the amount of material applied, and reduce the amount of developer used. Furthermore, it is not necessary to repeat exposure and development to form three or more kinds of different members, the number of manufacturing steps is reduced, the yield rate is improved, and the process time can be shortened.

  Further, in the gradation mask used in the present invention, the pattern of the semitransparent film is composed of a main pattern and a slit pattern processed into a fine slit shape, and the semitransparent film is processed into a predetermined pattern. By doing so, it is possible to obtain the first translucent region and the second translucent region having different transmittances. Therefore, the gradation mask used in the present invention does not need to be repeatedly formed and patterned a semitransparent film in order to increase the number of gradations, and can be manufactured by a relatively simple process.

FIG. 3 is an example of forming spacers and overcoat layers having different thicknesses in a color filter according to the present invention. First, as shown in FIG. 3A, the light shielding portion 2 and the colored layer 3 are formed on the substrate 1, and the photosensitive resin layer 5 made of a negative photosensitive resin is formed on the colored layer 3. Next, as shown in FIG. 2B, the photosensitive resin layer 5 is exposed through the gradation mask 11.
The gradation mask 11 has a light shielding film 13 and a semi-transparent film 14 formed in a pattern on a transparent substrate 12, a transmission region 21 having only the transparent substrate 12, and a light shielding film 13 on the transparent substrate 12. And a light shielding region 22 provided with a main pattern 14a of a semi-transparent film, a first semi-transparent region 23 provided only with a main pattern 14a of a semi-transparent film on the transparent substrate 12, and a semi-transparent region on the transparent substrate 12. And a second translucent region 24 provided with only the slit pattern 14b of the transparent film.
In the gradation mask 11, since the transmittance is different between the transmissive region 21, the light shielding region 22, the first semi-transparent region 23, and the second semi-transparent region 24, the photosensitive resin layer is cured according to the transmittance of each region. The degree of reaction is different, and development is performed after exposure, whereby three types of different members (high spacer 32a, low spacer 32b, and overcoat layer 32c) having different shapes and thicknesses are formed.

FIG. 4 is an example of forming spacers and alignment control protrusions in a color filter according to the present invention. In a color filter used in a transflective liquid crystal display device, a spacer is formed in a non-display region, and a transmissive part and a reflective part. This is an example of forming alignment control protrusions having a uniform thickness. First, as shown in FIG. 4A, the light shielding portion 2 and the colored layer 3 are formed on the substrate 1, the gap adjusting layer 6 is formed on the colored layer 3, and the gap adjusting layer 6 is covered. A transparent electrode layer 4 is formed, and a photosensitive resin layer 5 made of a negative photosensitive resin is formed on the transparent electrode layer 4. Of the display area, the area where the gap adjustment layer 6 is provided is the reflection part r, and the area where the gap adjustment layer 6 is not provided is the transmission part t. Next, as shown in FIG. 4B, the photosensitive resin layer 5 is exposed through the gradation mask 11.
The gradation mask 11 has a light shielding film 13 and a semi-transparent film 14 formed in a pattern on a transparent substrate 12, a transmission region 21 having only the transparent substrate 12, and a light shielding film 13 on the transparent substrate 12. And a light shielding region 22 provided with a main pattern 14a of a semi-transparent film, a first semi-transparent region 23 provided only with a main pattern 14a of a semi-transparent film on the transparent substrate 12, and a semi-transparent region on the transparent substrate 12. And a second translucent region 24 provided with only the slit pattern 14b of the transparent film.
In the gradation mask 11, since the transmittance is different between the transmissive region 21, the light shielding region 22, the first semi-transparent region 23, and the second semi-transparent region 24, the photosensitive resin layer is cured according to the transmittance of each region. The degree of reaction differs, and development is performed after exposure to form three different types of members (spacer 33a, transmission portion orientation control projection 33b, and reflection portion orientation control projection 33c) having different shapes and heights. Is done.

FIG. 5 shows an example in which the spacer, the alignment control protrusion, and the light shielding portion are formed in the color filter according to the present invention. First, as shown in FIG. 5 (a), a colored layer 3 is formed on a substrate 1, a transparent electrode layer 4 is formed on the colored layer 3, and a negative photosensitive resin is formed on the transparent electrode layer 4. A photosensitive resin layer 5 is formed. Next, as shown in FIG. 5B, the photosensitive resin layer 5 is exposed through the gradation mask 11.
The gradation mask 11 has a light shielding film 13 and a semi-transparent film 14 formed in a pattern on a transparent substrate 12, a transmission region 21 having only the transparent substrate 12, and a light shielding film 13 on the transparent substrate 12. And a light shielding region 22 provided with a main pattern 14a of a semi-transparent film, a first semi-transparent region 23 provided only with a main pattern 14a of a semi-transparent film on the transparent substrate 12, and a semi-transparent region on the transparent substrate 12. And a second translucent region 24 provided with only the slit pattern 14b of the transparent film.
In the gradation mask 11, since the transmittance is different between the transmissive region 21, the light shielding region 22, the first semi-transparent region 23, and the second semi-transparent region 24, the photosensitive resin layer is cured according to the transmittance of each region. The degree of reaction is different, and development is performed after exposure to form three types of different members (spacer 34a, orientation control protrusion 34b, and light shielding portion 34c) having different shapes and thicknesses.
In this case, by using a photosensitive resin composition containing a negative photosensitive resin and a black colorant to form the photosensitive resin layer, the light-shielding spacer 34a, the alignment control protrusion 34b, and the light-shielding portion 34c are formed. Can be obtained.

FIG. 6 is an example of forming a spacer, a gap adjusting layer and an overcoat layer in a color filter according to the present invention. In a color filter used in a transflective liquid crystal display device, a spacer is formed in a non-display area, In this example, a gap adjusting layer is formed on the overcoat layer so as to cover the colored layer. First, as shown in FIG. 6A, the light shielding portion 2 and the colored layer 3 are formed on the substrate 1, and the photosensitive resin layer 5 made of a negative photosensitive resin is formed on the colored layer 3. Next, as shown in FIG. 6B, the photosensitive resin layer 5 is exposed through the gradation mask 11.
The gradation mask 11 has a light shielding film 13 and a semi-transparent film 14 formed in a pattern on a transparent substrate 12, a transmission region 21 having only the transparent substrate 12, and a light shielding film 13 on the transparent substrate 12. And a light shielding region 22 provided with a main pattern 14a of a semi-transparent film, a first semi-transparent region 23 provided only with a main pattern 14a of a semi-transparent film on the transparent substrate 12, and a semi-transparent region on the transparent substrate 12. And a second translucent region 24 provided with only the slit pattern 14b of the transparent film.
In the gradation mask 11, since the transmittance is different between the transmissive region 21, the light shielding region 22, the first semi-transparent region 23, and the second semi-transparent region 24, the photosensitive resin layer is cured according to the transmittance of each region. The degree of reaction is different, and development is performed after exposure to form three types of different members (spacer 35a, gap adjusting layer 35b, and overcoat layer 35c) having different shapes and heights. Of the display region, the region where the gap adjustment layer 35b is provided is the reflection portion r, and the region where the gap adjustment layer 35b is not provided is the transmission portion t.

FIG. 7 shows an example in which spacers and overcoat layers having different thicknesses are formed in a color filter according to the present invention, which is used in a liquid crystal display device, and one pixel is a subpixel of four colors (red, green, blue, and white). This is an example in which a spacer and an overcoat layer having different thicknesses according to red, green, blue, and white are formed in the configured color filter.
Here, in a color filter in which one pixel is composed of sub-pixels of four colors (red, green, blue, and white), for example, as shown in FIG. Pixels are arranged in a mosaic pattern, and a red pattern 3R, a green pattern 3G, and a blue pattern 3B are formed on the substrate 1 according to the red R, green G, and blue B subpixels. A colored layer is not formed in the corresponding part.
First, as shown in FIG. 7A, a red pattern (not shown) and a green pattern (not shown) are formed on the substrate 1 in accordance with the light shielding portion 2 and the red R, green G, and blue B subpixels. And a colored layer composed of the blue pattern 3B, and a photosensitive resin layer 5 made of a negative photosensitive resin is formed on the colored layer. At this time, a colored layer is not formed in a portion corresponding to the white W sub-pixel. Next, as shown in FIG. 7B, the photosensitive resin layer 5 is exposed through the gradation mask 11.
The gradation mask 11 has a light shielding film 13 and a semi-transparent film 14 formed in a pattern on a transparent substrate 12, a transmission region 21 having only the transparent substrate 12, and a light shielding film 13 on the transparent substrate 12. And a light shielding region 22 provided with a main pattern 14a of a semi-transparent film, a first semi-transparent region 23 provided only with a main pattern 14a of a semi-transparent film on the transparent substrate 12, and a semi-transparent region on the transparent substrate 12. And a second translucent region 24 provided with only the slit pattern 14b of the transparent film.
In the gradation mask 11, since the transmittance is different between the transmissive region 21, the light shielding region 22, the first semi-transparent region 23, and the second semi-transparent region 24, the photosensitive resin layer is cured according to the transmittance of each region. The degree of reaction differs, and development is carried out after exposure, so that three different kinds of members having different shapes and thicknesses (spacer 36a, red / green / blue (RGB) overcoat layer 36b, and white (W) overcoat are obtained. Layer 36c) is formed.

  As described above, in the present invention, since the transmittance of the gradation mask changes in four steps or more, the shape and thickness of the color filter constituting the color filter by using this predetermined gradation mask. In addition, three or more different kinds of different members having different heights can be formed at the same time.

In the present invention, the dissimilar member refers to a member that is different in at least one of thickness and height. The functions of the different members may be the same or different. Here, the thickness is the thickness of the member itself, and the height is the height from the substrate.
In the example shown in FIG. 1, the high spacer 31a and the low spacer 31b have the same function but are different in thickness and height. Further, the high spacer 31a and the low spacer 31b and the alignment control protrusion 31c have different functions, different thicknesses and heights, and different shapes.
In the example shown in FIG. 4, the transmission portion orientation control projection 33b and the reflection portion orientation control projection 33c have the same function and the same thickness, but different heights. Further, the spacer 33a, the transmission portion orientation control projection 33b, and the reflection portion orientation control projection 33c have different functions, different thicknesses and heights, and different shapes.
In the example shown in FIG. 7, the RGB overcoat layer 36b and the W overcoat layer 36c have the same function and the same height, but different thicknesses. The spacer 36a, the RGB overcoat layer 36b, and the W overcoat layer 36c have different functions, different thicknesses and heights, and different shapes.
Accordingly, in FIG. 1 and FIGS. 3 to 7, the three types of members obtained are different members.

Conventionally, when the alignment control protrusions are formed on the reflection part and the transmission part as illustrated in FIG. 4, the reflection resin r 5 and the transmission part t are formed of the photosensitive resin layer 5 as shown in FIG. The thickness was sometimes different. In this case, when the photomask is used for batch exposure, the thickness of the alignment control protrusion formed on the reflective portion and the transmissive portion is different, and the thickness of the alignment control protrusion formed on the transmissive portion is formed on the reflective portion. There has been a problem that the thickness becomes larger than the thickness of the alignment control projection. Therefore, in order to form an alignment control protrusion having a uniform thickness on the reflective part and the transmissive part, exposure is performed a plurality of times, and an alignment control protrusion is formed on the transmissive part and an alignment control protrusion is formed on the reflective part. It was necessary to carry out the process separately.
On the other hand, in the present invention, since a predetermined gradation mask is used, members having a uniform thickness can be simultaneously formed at portions having different heights from the substrate.

Conventionally, when an overcoat layer is formed in a color filter in which one pixel is composed of four sub-pixels as illustrated in FIG. 7, red R, green G, In the blue B subpixel, the photosensitive resin layer 5 may be thicker than the white W subpixel. In this case, when the photomask is used for batch exposure, the thickness of the overcoat layer formed by the red, green, and blue subpixels differs from that of the white subpixel, resulting in an overcoat layer with a flat surface. There was a bug that there was no.
On the other hand, since a predetermined gradation mask is used in the present invention, a member having a flat surface can be formed at a portion having a different height from the substrate.

  Hereinafter, each process in the manufacturing method of the color filter of this invention is demonstrated.

1. Photosensitive resin layer formation process The photosensitive resin layer formation process in this invention is a process of forming the photosensitive resin layer which consists of photosensitive resin on a board | substrate.

  As the photosensitive resin used in the present invention, either a negative photosensitive resin or a positive photosensitive resin can be used. Since the three or more kinds of different members formed by the present invention are made of a photosensitive resin, the type of the photosensitive resin to be used is appropriately selected according to the different members to be formed. Among these, a negative photosensitive resin is preferably used. As described above, in the exposure using the gradation mask, a difference occurs in the curing reaction of the negative photosensitive resin depending on the light shielding region, the transmission region, the first semitransparent region, and the second semitransparent region. This is advantageous for forming different kinds of members having different thicknesses and heights.

  The negative photosensitive resin is not particularly limited, and those generally used can be used. Also in this case, since three or more kinds of different members are made of a photosensitive resin, the negative photosensitive resin to be used may be selected according to the member to be formed. For example, a chemically amplified photosensitive resin based on a crosslinked resin, specifically, a chemically amplified photosensitive resin in which a crosslinking agent is added to polyvinylphenol and an acid generator is further added. Also, for example, as an acrylic negative photosensitive resin, it has a photopolymerization initiator that generates at least a radical component when irradiated with ultraviolet rays, and has an acrylic group of C = C in the molecule. And a functional group (for example, a component having an acidic group in the case of development with an alkali solution) that can dissolve the unexposed portion by subsequent development can be used. Among the above-mentioned components having an acrylic group, relatively low molecular weight polyfunctional acrylic molecules include dipentaerythritol hexaacrylate (DPHA), dipentaerythritol pentaacrylate (DPPA), tetramethylpentatriacrylate (TMPTA) and the like. Can be mentioned. Moreover, as a high molecular weight polyfunctional acrylic molecule, the polymer etc. which introduce | transduced the acrylic group through the epoxy group to the one part carboxylic acid group part of a styrene-acrylic acid-benzylmethacrylate copolymer are mentioned.

  In addition, additives such as conductive powders such as carbon black, copper-iron-manganese composite oxide, indium tin oxide (ITO), aluminum, silver, iron oxide, etc., are added to the negative photosensitive resin as necessary. May be. For example, as shown in FIG. 5, in the case where the light shielding part is formed as one of three or more kinds of different members, a photosensitive resin composition in which a black colorant such as carbon black is added to a negative photosensitive resin is used. Used.

  Moreover, it does not specifically limit as positive type photosensitive resin, What is generally used can be used. As described above, since the three or more kinds of different members are made of the photosensitive resin, the positive photosensitive resin to be used may be selected according to the member to be formed. Specifically, a photosensitive resin using a novolac resin as a base resin can be used.

  Examples of the method for applying the photosensitive resin composition containing the photosensitive resin include spin coating, casting, dipping, bar coating, blade coating, roll coating, gravure coating, flexographic printing, and spraying. A coating method or the like can be used.

  The thickness of the photosensitive resin layer after coating is appropriately adjusted according to the different member to be formed. For example, as shown in FIG. 1, the thickness of the photosensitive resin layer is adjusted so as to match the height (thickness) of the highest (thickest) member among three or more kinds of different members. In the example of FIG. 1, the thickness of the photosensitive resin layer is adjusted to match the height of the high spacer.

  After application of the photosensitive resin composition, the photosensitive resin layer may be subjected to heat treatment (pre-baking).

  As a substrate used in the present invention, for example, a non-flexible transparent rigid material such as quartz glass, Pyrex (registered trademark) glass, synthetic quartz plate, or a flexible resin material such as a transparent resin film or an optical resin plate is used. A transparent flexible material can be used. Among these, Corning 1737 glass is a material having a small coefficient of thermal expansion, excellent dimensional stability and characteristics in high-temperature heat treatment, and is an alkali-free glass containing no alkali component in the active matrix. Suitable for color filters for liquid crystal display devices.

2. Different member forming step In the present invention, the different member forming step is a step in which the photosensitive resin layer is exposed and developed using a gradation mask to simultaneously form three or more different members made of a photosensitive resin. .
Hereinafter, a gradation mask and a method for forming different members will be described.

(1) Gradation mask The gradation mask used in the present invention has a transparent substrate, a light-shielding film formed in a pattern on the transparent substrate, and a translucent film having a transmittance adjusting function. The pattern of the transparent film is composed of a main pattern and a slit pattern having a slit width equal to or less than a resolution limit in exposure in the dissimilar member forming step, the transmission region having only the transparent substrate, and the transparent substrate on the transparent substrate A light-shielding region provided with a light-shielding film pattern, a first semi-transparent region where only the main pattern of the semi-transparent film is provided on the transparent substrate, and only a slit pattern of the semi-transparent film on the transparent substrate. And a second translucent region provided.
Hereinafter, each configuration of the gradation mask will be described.

(I) Translucent film The translucent film used for the gradation mask is formed in a pattern on a transparent substrate and has a transmittance adjusting function. The translucent film pattern is composed of a main pattern and a slit pattern having a slit width equal to or less than a resolution limit in exposure in the different member forming process.

The main pattern of the semitransparent film is arranged in the first semitransparent area, but may be arranged in the light shielding area. When the gradation mask has a third semi-transparent region to be described later, the main pattern of the semi-transparent film is also disposed in the third semi-transparent region.
The size and shape of the main pattern of the semi-transparent film are appropriately adjusted according to the size and shape of the first semi-transparent region, the light shielding region, and the third semi-transparent region.

The slit pattern of the semitransparent film is arranged in the second semitransparent region.
The slit width of the slit pattern of the translucent film is not particularly limited as long as it is a size less than the resolution limit in exposure in the different member forming process, and depends on the transmittance of the target second translucent region. Are adjusted accordingly. Moreover, the pitch of the slit pattern of the semitransparent film is not particularly limited, and is appropriately adjusted according to the transmittance of the target second semitransparent region.

  Although it does not specifically limit as a transmittance | permeability characteristic of a semi-transparent film | membrane, Two preferable aspects can be mentioned.

  In the first aspect of the transmissivity characteristic of the translucent film, the transmissivity at a wavelength of 365 nm is larger than the transmissivity at a wavelength of 300 nm, and the difference between the transmissivity at a wavelength of 365 nm and the transmissivity at a wavelength of 300 nm is 6.5. It is the transmittance | permeability characteristic that it exists in the range of% -13.0%. For example, when a high-pressure mercury lamp is used in the exposure apparatus, the end of the emission line spectrum is approximately 300 nm and the wavelength of the I-line is 365 nm. Light not only in the wavelength range (about 350 nm to 450 nm) but also in the short wavelength range (about 300 nm to 350 nm) is transmitted through the translucent film with a predetermined transmittance. Light in a short wavelength region has advantages of high energy and a high reaction rate (curing rate or decomposition rate). For this reason, it is possible to shorten the exposure time by effectively using light in a short wavelength region. Further, when a negative photosensitive resin is used, exposure in a short wavelength region tends to cure the photosensitive resin layer from the surface, so that diffusion of impurities from the inside of the photosensitive resin layer can be suppressed.

The preferable range of the difference in transmittance at 365 nm and 300 nm is different depending on the dissimilar member to be formed. For example, when forming spacers and orientation control protrusions having different thicknesses as different members, it is preferably in the range of 6.5% to 13.0%, more preferably in the range of 8% to 12%. is there. For example, when forming spacers and overcoat layers having different thicknesses as different members, it is preferably in the range of 6.5% to 13.0%, more preferably in the range of 6.5% to 10%. Is within.
Furthermore, in the case where a different member having a height difference of 3 μm or more is formed corresponding to the transmissive region and the first translucent region of the gradation mask, it is in the range of 6.5% to 10.0%. More preferably, it is in the range of 6.5% to 9.0%. Further, in the case where a different member having a height difference of 3 μm or less is formed corresponding to the transmissive region and the first translucent region of the gradation mask, it is in the range of 10.0% to 13.0%. Preferably, it is in the range of 10.5% to 12.0%.

  Further, the transmittance at a wavelength of 405 nm is larger than the transmittance at a wavelength of 300 nm, and the difference between the transmittance at a wavelength of 405 nm and the transmittance at a wavelength of 300 nm is in the range of 10.5% to 21.0%. Is preferred. For example, when a high-pressure mercury lamp is used in the exposure apparatus, the wavelength of H-ray is 405 nm. This is because light in a short wavelength region can be used effectively as in the above case.

The preferable range of the difference in transmittance at 405 nm and 300 nm varies depending on the different member to be formed. For example, when forming spacers and orientation control protrusions having different thicknesses as different members, it is preferably in the range of 10.5% to 21.0%, more preferably in the range of 13% to 17%. is there. For example, when forming spacers and overcoat layers having different thicknesses as different members, it is preferably in the range of 10.5% to 21.0%, more preferably 10.5% to 14.5%. Is within the range.
Further, in the case where a different member having a height difference of 3 μm or more is formed corresponding to the transmissive region and the first translucent region of the gradation mask, it is within the range of 10.5% to 15.5%. It is preferable that it is within a range of 12.0% to 14.0%. In the case where a different member having a height difference of 3 μm or less is formed corresponding to the transmissive region and the first translucent region of the gradation mask, it is within the range of 15.5% to 21.0%. It is preferable that it is within a range of 16.0% to 18.0%.

  Furthermore, the transmittance at a wavelength of 436 nm is larger than the transmittance at a wavelength of 300 nm, and the difference between the transmittance at a wavelength of 436 nm and the transmittance at a wavelength of 300 nm is in the range of 13.5% to 27.0%. Is preferred. For example, when a high-pressure mercury lamp is used for the exposure apparatus, the wavelength of G-line is 436 nm. In this case as well, light in the short wavelength region can be used effectively.

The preferable range of the difference in transmittance at 436 nm and 300 nm varies depending on the different member to be formed. For example, when forming spacers and orientation control protrusions having different thicknesses as different members, it is preferably in the range of 13.5% to 27.0%, more preferably in the range of 18% to 22%. is there. For example, when forming spacers and overcoat layers having different thicknesses as different members, the content is preferably in the range of 13.5% to 27.0%, more preferably 13.5% to 17.5%. Is within the range.
Further, in the case where a different member having a height difference of 3 μm or more is formed corresponding to the transmissive region and the first translucent region of the gradation mask, it is within the range of 13.5% to 20.0%. It is preferable that it is within a range of 13.5% to 17.0%. Further, in the case where a dissimilar member having a height difference of 3 μm or less is formed corresponding to the transmissive region and the first translucent region of the gradation mask, it is within the range of 20.0% to 27.0%. It is preferable that it is within a range of 20.0% to 23.0%.

  Further, the transmittance at a wavelength of 300 nm varies depending on the thickness of the translucent film and the dissimilar member to be formed, but is preferably in the range of 3.5% to 70%, particularly 7.0% to 70%. % Is preferable. For example, when a high-pressure mercury lamp is used in the exposure apparatus, the end of the emission spectrum is approximately 300 nm. Therefore, if the transmittance at a wavelength of 300 nm is in the above range, light in a short wavelength region should be used more reliably. Because you can.

The preferable range of the transmittance at 300 nm is different depending on the different member to be formed. For example, when spacers and alignment control protrusions having different thicknesses are formed as different members, it is preferably in the range of 10% to 50%, and more preferably in the range of 15% to 45%. For example, when forming spacers and overcoat layers having different thicknesses as different members, it is preferably in the range of 3.5% to 20%, more preferably in the range of 5% to 10%.
Further, in the case where a different member having a height difference of 3 μm or more is formed corresponding to the transmissive region and the first translucent region of the gradation mask, it is within the range of 3.5% to 15.0%. It is preferable that it is within a range of 7.0% to 10.0%. Further, in the case of forming a dissimilar member having a height difference of 3 μm or less corresponding to the transmissive region and the first translucent region of the gradation mask, it is within the range of 15.0% to 70.0%. It is preferable that it is within a range of 20.0% to 50.0%.

  Furthermore, the average transmittance at a wavelength of 250 nm to 600 nm is preferably in the range of 10% to 60%, more preferably in the range of 20% to 50%. If the average transmittance is less than the above range, a difference in transmittance between the first semi-transparent region and the light-shielding region may be difficult to occur, and if the average transmittance exceeds the above range, the second semi-transparent region and the transmission region may be difficult. This is because it may be difficult to produce a difference in transmittance.

  In addition, the transmittance | permeability in each wavelength mentioned above can measure the transmittance | permeability of a semi-transparent film | membrane using the transmittance | permeability of the transparent substrate used for a gradation mask as a reference (100%). As the apparatus, an ultraviolet / visible spectrophotometer (for example, Hitachi U-4000) or an apparatus having a photodiode array as a detector (for example, Otsuka Electronics MCPD) can be used.

  Moreover, the 2nd aspect of the transmittance | permeability characteristic of a semi-transparent film | membrane is a transmittance | permeability characteristic that the transmittance | permeability distribution in the range of wavelength 300nm-450nm is 7% or less. For example, when a high-pressure mercury lamp is used for the exposure apparatus, the end of the emission spectrum is approximately 300 nm, the wavelength of I-line is 365 nm, the wavelength of H-line is 405 nm, and the wavelength of G-line is 436 nm. If the transmittance distribution within the range of 300 nm to 450 nm including the above is within the above range, both the long wavelength range (about 350 nm to 450 nm) and the short wavelength range (about 300 nm to 350 nm) of the exposure light are translucent with almost constant transmittance. Since the light passes through the film, the exposure light can be used effectively. Further, by adjusting the transmittance at a certain wavelength, the transmittance can be adjusted within a predetermined range over the entire exposure wavelength range, and the film thickness of the photosensitive resin layer after development can be controlled. It is easy to control the film thickness of the photosensitive resin layer.

  The transmittance distribution in the wavelength range of 300 nm to 450 nm is preferably 5% or less.

  Moreover, it is preferable that the transmittance | permeability distribution in wavelength 250nm -600nm is 20% or less, More preferably, it is 10% or less. In general, in the color filter manufacturing process, the exposure wavelength range is often set as an exposure condition within a range of 250 nm to 600 nm. Therefore, if the transmittance distribution at 250 nm to 600 nm is within the above range, a wide wavelength range is effectively used. This is because it can be used.

  Furthermore, the transmittance at a wavelength of 300 nm varies depending on the film thickness of the translucent film and the dissimilar member to be formed, but is preferably in the range of 10% to 70%. As described above, for example, when a high-pressure mercury lamp is used in the exposure apparatus, since the end of the emission spectrum is approximately 300 nm, if the transmittance at a wavelength of 300 nm is in the above range, light in a short wavelength region is more This is because it can be used reliably.

  The preferable range of the transmittance at 300 nm is different depending on the different member to be formed. For example, when a different member having a height difference of 3 μm or more is formed corresponding to the transmission region and the first translucent region of the gradation mask, it is preferably within a range of 10% to 30%. More preferably, it is in the range of 10% to 20%. Further, in the case where a different member having a height difference of 3 μm or less is formed corresponding to the transmission region and the first translucent region of the gradation mask, it is preferably within a range of 30% to 70%. More preferably, it is in the range of 30% to 50%.

  Moreover, it is preferable that the average transmittance | permeability in wavelength 250nm -600nm of a translucent film | membrane is in the range of 10%-60%. If the average transmittance is less than the above range, a difference in transmittance between the first semi-transparent region and the light-shielding region may be difficult to occur, and if the average transmittance exceeds the above range, the second semi-transparent region and the transmission region may be difficult. This is because it may be difficult to produce a difference in transmittance.

The transmittance distribution was obtained by dividing the difference between the maximum transmittance (T _max ) and the minimum transmittance (T _min ) at 300 nm to 450 nm by the value obtained by doubling the average transmittance (T _av ) at 300 nm to 450 nm. It is a value obtained by multiplying the value by 100. (Transmissivity distribution = (T _max −T _min ) / (2T _av ) × 100)
Further, the transmittance measurement method is the same as the method described in the first aspect of the transmittance characteristic.

  Examples of the material for forming the translucent film having the transmittance characteristics of the first aspect include oxides such as chromium, molybdenum silicide, tantalum, aluminum, and silicon, nitrides, and carbides. From the advantage that the translucent film and the light-shielding film can be patterned by the same etching equipment and process, the material for forming the translucent film is preferably a material similar to the light-shielding film. As will be described later, it is preferable that the light-shielding film forming material is a chromium-based material. Therefore, the semi-transparent film forming material is also a chromium-based material such as chromium, chromium oxide, chromium nitride, chromium oxynitride, or chromium oxynitride carbide. It is preferable that These chromium-based materials have an advantage that they can withstand long-time use because they are excellent in mechanical strength and are stable without light-retarding.

In the case of the first aspect, it is particularly preferable that the material for forming the translucent film is chromium oxynitride carbide (Cr _x O _y N _z C _w ). Here, w is preferably <0.01, and the element ratio of Cr, O, and N is preferably Cr: 30 to 60%, O: 30 to 70%, and N: 0 to 40%. It is preferable that it is -45%, O: 40-60%, N: 2-20%.

Further, as a material for forming the translucent film having the transmittance characteristic of the second aspect, for example, a film of a metal such as chromium, molybdenum silicide, tantalum, aluminum, silicon, nickel, or chromium, molybdenum silicide, tantalum, aluminum And nitrides and carbides of metals such as silicon and nickel.
For example, since metals, metal nitrides, and metal carbides have a relatively large absorption coefficient, the transmittance distribution is within a predetermined range at wavelengths of 300 nm to 450 nm, and often has the above-described transmittance characteristics. In contrast, a metal oxide has a relatively small absorption coefficient, and the absorption coefficient approaches almost zero as the wavelength becomes longer (ultraviolet / visible region). Therefore, the transmittance characteristic increases as the wavelength increases. Often shown. Therefore, as described above, metal, metal nitride, and metal carbide are used as the material for forming the translucent film. Note that the translucent film using a metal, metal nitride, or metal carbide may contain a trace amount of oxygen as long as the above-described transmittance characteristics are satisfied.

  Also in the case of the second embodiment, the semi-transparent film and the light-shielding film are preferably made of the same material as the light-shielding film because of the advantage that the semi-transparent film and the light-shielding film can be patterned by the same etching equipment and process. As will be described later, since the light-shielding film forming material is preferably a chromium-based material, the translucent film forming material is also preferably a chromium-based material such as chromium or chromium nitride.

In the second aspect, the material for forming the translucent film is more preferably a metal. This is because a metal has a higher absorption coefficient than that of a metal nitride, a metal carbide, or the like, and therefore, by using a metal, a translucent film that satisfies the above-described suitable transmittance characteristics can be obtained.
In particular, the material for forming the translucent film is preferably chromium. As described above, this is because the material for forming the translucent film is preferably the same material as the light-shielding film, and the material for forming the light-shielding film is preferably a chromium-based material in terms of patterning. The translucent film using chromium may contain a small amount of oxygen or nitrogen, but the chromium content in the translucent film is preferably 80% or more, and particularly preferably 95% or more. It is because it can be set as the semi-transparent film | membrane which satisfies the suitable transmittance | permeability characteristic mentioned above.

  In the second embodiment, molybdenum silicide and tantalum are also preferably used as the material for forming the translucent film. The translucent film using tantalum may contain a small amount of oxygen or nitrogen as in the case of chromium.

  The translucent film may be a single layer or may be composed of a plurality of layers.

  The thickness of the translucent film is preferably a film thickness that satisfies the above-described transmittance characteristics. The thickness of the translucent film satisfying the transmittance characteristics of the first aspect is preferably about 5 to 50 nm when chromium is used, for example, and about 5 to 150 nm when chromium oxide is used. Is preferred. The thickness of the translucent film that satisfies the transmittance characteristics of the second aspect is preferably about 5 nm to 20 nm when chromium is used, for example. Since the transmissivity of the translucent film varies depending on its thickness, the desired transmissivity can be obtained by controlling the thickness. Further, when the translucent film contains oxygen, nitrogen, carbon, etc., the transmittance varies depending on the composition, so that the desired transmittance can be realized by simultaneously controlling the thickness and the composition.

  The pattern of the semitransparent film can be formed by forming a semitransparent film and patterning it. As a method for forming the translucent film, for example, a physical vapor deposition method (PVD) such as a sputtering method, an ion plating method, or a vacuum vapor deposition method is used. For example, when forming a chromium oxynitride chromium carbide film using a sputtering method, a reactive gas sputtering method using a Cr target by introducing a carrier gas such as Ar gas, oxygen (carbonic acid) gas, or nitrogen gas into the reactor. Thus, a chromium oxynitride carbide carbide film can be formed. At this time, the composition of the chromium oxynitride carbide film can be controlled by controlling the flow rates of Ar gas, oxygen (carbonic acid) gas, and nitrogen gas. The patterning method of the translucent film will be described in the section of the method for manufacturing a gradation mask described later, and will not be described here.

(Ii) Light-shielding film The light-shielding film used for the gradation mask is formed in a pattern on a transparent substrate and does not substantially transmit exposure light.

  The pattern of the light shielding film is arranged in the light shielding area, and the light shielding area is defined by the pattern of the light shielding film. The size and shape of the pattern of the light shielding film are appropriately adjusted according to the size and shape of the light shielding region.

  Further, the pattern of the light shielding film may be composed of a main pattern and a slit pattern having a slit width equal to or less than a resolution limit in exposure in the different member forming process. When the gradation mask has a third semi-transparent region to be described later, the main pattern of the light shielding film is disposed in the light shielding region, and the slit pattern of the light shielding film is disposed in the third semi-transparent region.

The size and shape of the main pattern of the light shielding film are appropriately adjusted according to the size and shape of the light shielding region.
In addition, the slit width of the slit pattern of the light shielding film is not particularly limited as long as it is a size that is equal to or smaller than the resolution limit in exposure in the different member forming process, and depends on the transmittance of the target third translucent region. Are adjusted accordingly. Further, the pitch of the slit pattern of the light shielding film is not particularly limited, and is appropriately adjusted according to the desired transmittance of the third translucent region.

  The average transmittance at the exposure wavelength of the light shielding film is preferably 0.1% or less. In addition, about the measuring method of average transmittance | permeability, it is the same as that of the method described in the term of the said semi-transparent film | membrane.

  As a material for forming such a light shielding film, a material for forming a light shielding film generally used for a photomask can be used. Examples of the material for forming the light shielding film include chromium, chromium oxide, chromium nitride, chromium oxynitride, molybdenum silicide, tantalum, aluminum, silicon, silicon oxide, and silicon oxynitride. Among these, chromium-based materials such as chromium, chromium oxide, chromium nitride, and chromium oxynitride are preferably used. This is because such a chromium-based material has the most actual use record and is preferable in terms of cost and quality. The light shielding film using a chromium-based material may be a single layer or may be a laminate of two or more layers.

  Further, the light shielding film may have a low reflection function. Since the low reflection function can prevent irregular reflection of exposure light, a clearer pattern can be formed. In order to add a low reflection function to the light shielding film, for example, a chromium compound such as chromium oxide for preventing reflection of exposure light may be contained on the surface of the light shielding film. In this case, the light shielding film may be formed by an inclined interface in which the content component gradually changes toward the surface.

  The thickness of the light shielding film is not particularly limited. For example, when chromium is used, the thickness can be about 50 nm to 150 nm.

  The pattern of the light shielding film can be formed by forming a light shielding film and patterning it. As a method for forming the light shielding film, for example, a physical vapor deposition method (PVD) such as a sputtering method, an ion plating method, or a vacuum vapor deposition method is used. The light-shielding film patterning method will be described in the section of a method for manufacturing a gradation mask, which will be described later, and will not be described here.

(Iii) First translucent area and second translucent area The first translucent area in the gradation mask is an area where only the main pattern of the translucent film is provided on the transparent substrate. That is, no light shielding film is formed in the first semitransparent region, and no slit pattern of the semitransparent film is formed.

  The second semitransparent region in the gradation mask is a region where only the slit pattern of the semitransparent film is provided on the transparent substrate. That is, the light-shielding film is not formed in the second semi-transparent region, and the main pattern of the semi-transparent film is not formed.

  In the second translucent region, there may be a plurality of regions in which at least one of the slit width and pitch of the slit pattern of the translucent film is different. For example, as shown in FIG. 9, a second translucent region 24a in which one semi-transparent film slit pattern 14b is formed, and a second translucent region 24b in which two semi-transparent film slit patterns 14b are formed, The second semitransparent region 24c in which five slit patterns 14b of the semitransparent film are formed may be mixed. Thereby, it is possible to further increase the number of gradations, and four or more kinds of different members can be simultaneously formed.

  The transmittance of the first translucent region is not particularly limited as long as it is lower than the transmittance of the transmissive region, higher than the transmittance of the light shielding region, and lower than the transmittance of the second translucent region. It is appropriately selected depending on the member.

  The transmittance of the second translucent region is not particularly limited as long as it is lower than the transmittance of the transmissive region, higher than the transmittance of the light shielding region, and higher than the transmittance of the first translucent region. It is appropriately selected depending on the different member.

  The dimensions and shapes of the first translucent region and the second translucent region are not particularly limited, and are appropriately adjusted according to the dissimilar member to be formed. For example, the shapes of the first translucent region and the second translucent region can be various shapes such as a circle, a rectangle, a frame, a polygon, and a line.

  As illustrated in FIG. 10, the gradation mask may have a third semi-transparent region 25 in which a light-shielding film slit pattern 13 b and a semi-transparent film main pattern 14 a are provided on the transparent substrate 12. Thereby, it is possible to further increase the number of gradations, and four or more kinds of different members can be simultaneously formed. In the third semi-transparent region, the main pattern of the light shielding film and the slit pattern of the semi-transparent film are not formed.

  If the transmittance of the third translucent region is lower than the transmittance of the transmissive region, higher than the transmittance of the light shielding region, lower than the transmittance of the first translucent region, and lower than the transmittance of the second translucent region, The material is not limited and is appropriately selected depending on the different member to be formed.

  The size and shape of the third translucent region are not particularly limited, and are appropriately adjusted according to the seed member to be formed.

  Further, as illustrated in FIG. 10, the gradation mask may include a fourth semi-transparent region 26 in which a light-shielding film slit pattern 13 b is provided on the transparent substrate 12. Thereby, it is possible to further increase the number of gradations, and four or more kinds of different members can be simultaneously formed. As illustrated in FIG. 10, a semi-transparent film slit pattern 14 b may be formed in the fourth semi-transparent region 26 at the same position as the light-shielding film slit pattern 13 b. Further, the main pattern of the light shielding film and the main pattern of the semitransparent film are not formed in the fourth semitransparent region.

  If the transmittance of the fourth translucent region is lower than the transmittance of the transmissive region, higher than the transmittance of the light shielding region, lower than the transmittance of the first translucent region, and lower than the transmittance of the second translucent region, The material is not limited and is appropriately selected depending on the different member to be formed.

  The size and shape of the fourth translucent region are not particularly limited, and are appropriately adjusted according to the different member to be formed.

(Iv) Transmission region and light shielding region The transmission region in the gradation mask is a region having only a transparent substrate. That is, neither the light-shielding film nor the translucent film is formed in the transmission region.

  The light shielding region in the gradation mask is a region where a light shielding film pattern is provided on a transparent substrate. The light shielding region only needs to have at least a light shielding film pattern formed on the transparent substrate. For example, only the light shielding film pattern may be formed, and the light shielding film pattern and the semitransparent film pattern are formed. May be. When the gradation mask has the third semi-transparent region, the light shielding region is a region where the main pattern of the light shielding film is provided on the transparent substrate.

  The dimensions and shapes of the transmissive region and the light shielding region are not particularly limited, and are appropriately adjusted according to the different member to be formed. For example, the shapes of the transmission region and the light shielding region can be various shapes such as a circle, a rectangle, a frame, a polygon, and a line.

(V) Transparent substrate As the transparent substrate used in the present invention, a substrate generally used for a photomask can be used. As the transparent substrate, for example, optically polished low expansion glass such as borosilicate glass and aluminoborosilicate glass, quartz glass, synthetic quartz glass, Pyrex (registered trademark) glass, soda lime glass, white sapphire and the like are not flexible. A transparent rigid material, or a transparent flexible material having flexibility such as a transparent resin film or an optical resin film can be used. Among them, quartz glass is a material having a small coefficient of thermal expansion, and is excellent in dimensional stability and characteristics in high-temperature heat treatment.

(Vi) Gradation mask The gradation mask is obtained by forming a light-shielding film and a semi-transparent film in a pattern on a transparent substrate. What is necessary is just to have an area | region etc., As a lamination order of a transparent substrate, a light shielding film, and a semi-transparent film | membrane, it does not specifically limit. For example, the transparent substrate 12, the light shielding film 13, and the semi-transparent film 14 may be laminated in this order as shown in FIG. The semi-transparent film 14, the transparent substrate 12, and the light-shielding film 13 may be laminated in this order as shown in FIG.

In the gradation mask, a low reflection layer may be formed on the light shielding film. This is because by providing the low reflection layer, halation can be prevented when the gradation mask is used.
Examples of the low reflection layer include films of chromium oxide, chromium nitride, chromium oxynitride, and the like. When a chromium-based material is used for the light shielding film, these films can be etched simultaneously with the etching of the light shielding film.

  The gradation mask has a transmittance that changes in four steps or more. The gradation mask is not limited to the gradation mask of 4 gradations, but can be changed to 4 gradations or more by periodically changing the slit width and pitch of the slit pattern of the semitransparent film in the second semitransparent region. It is possible to use a multi-tone gradation mask. For example, as shown in FIG. 9, the transmittance of the three types of second semi-transparent regions 24a, 24b, and 24c can be made different by periodically changing the pitch of the slit pattern 14b of the semi-transparent film. .

  In the present invention, a multi-tone mask having four or more tones can be obtained by combining the main pattern and slit pattern of the translucent film and the slit pattern of the light shielding film. For example, as shown in FIG. 10, the gradation mask 11 is formed on the transparent substrate 12 in the third semi-transparent region 25 where the light-shielding film slit pattern 13 b and the semi-transparent film main pattern 14 a are provided, or on the transparent substrate 12. By having the fourth translucent region 26 provided with the slit pattern 3b of the light shielding film, it is possible to increase the number of gradations.

  The size of the gradation mask is appropriately adjusted according to the dissimilar member to be formed, and can be, for example, about 300 mm × 400 mm to 1,600 mm × 1,800 mm.

(Vii) Gradation Mask Manufacturing Method A gradation mask manufacturing method used in the present invention includes a translucent film and a light shielding film at a desired position by forming a translucent film and a light shielding film in a pattern on a transparent substrate. The method is not particularly limited as long as the region, the first translucent region, the second translucent region, and the like can be arranged.

  As an example of a method for manufacturing a gradation mask used in the present invention, a first patterning step of patterning a light shielding film and forming an intermediate pattern of the light shielding film using a mask blank having a light shielding film formed on a transparent substrate And a translucent film forming step of forming a translucent film on the entire surface of the transparent substrate on which the intermediate pattern of the light shielding film is formed, patterning the intermediate pattern and the semitransparent film of the light shielding film, The manufacturing method which has the 2nd patterning process which forms the main pattern and slit pattern of a semi-transparent film | membrane is mentioned.

An example of a method for manufacturing the above-described gradation mask is shown in FIG.
First, a mask blank 50 having a light shielding film 53 formed on a transparent substrate 12 is prepared (FIG. 12A). Next, a positive resist material is applied onto the light shielding film 53 and baked for a predetermined time after the application, thereby forming a first resist film 51 (FIG. 12B). Next, pattern exposure and development are performed to form a first resist pattern 51 ′ (FIG. 12C). At this time, the first resist film 51 is removed in the first semi-transparent region 23 and the second semi-transparent region 24 in the obtained gradation mask, and the first resist film 51 remains in the transmissive region 21 and the light-shielding region 22. Pattern exposure. Then, the light shielding film 53 exposed from the first resist pattern 51 ′ is etched, and the remaining first resist pattern 51 ′ is removed to form a light shielding film intermediate pattern 53 ′ (FIG. 12D). ). 12A to 12D show the first patterning step.

  Next, a semitransparent film 54 is formed on the entire surface of the transparent substrate 12 on which the light shielding film intermediate pattern 53 ′ is formed (FIG. 12E, a semitransparent film forming step).

  Next, a positive resist material is applied on the semitransparent film 54, and baked for a predetermined time after the application, thereby forming a second resist film 52 (FIG. 12 (f)). Next, a second resist pattern 52 ′ is formed by performing pattern exposure and development (FIG. 12G). At this time, the second resist film 52 is removed in the transmission region 21 in the obtained gradation mask, the second resist film 52 remains in the light shielding region 22 and the first semi-transparent region 23, and the second semi-transparent region 24 in the second semi-transparent region 24. 2. Pattern exposure is performed so that the resist film 52 is patterned into a slit shape. Then, the semitransparent film 54 exposed from the second resist pattern 52 'is etched, and then the portion where the lower light shielding film intermediate pattern 53' is exposed is further etched to leave the remaining second resist The pattern 52 'is removed, and the pattern of the light shielding film 13, the main pattern 14a of the translucent film, and the slit pattern 14b are formed (FIG. 12 (h)). FIGS. 12F to 12H show the second patterning process.

  In the above method, it is not necessary to selectively etch only the light shielding film or only the translucent film. For this reason, it has the advantage that the material used for a light shielding film and a semi-transparent film is not limited. For example, a similar material, specifically, a chromium-based material can be used for the light-shielding film and the translucent film. In addition, since etching selectivity is not required, it is not necessary to use a plurality of etching techniques (a plurality of apparatuses, etchants, etc.), and the manufacturing cost can be reduced. Further, when a chromium-based material is used for the light shielding film and the semitransparent film, the gradation mask can be manufactured by the same process as the conventional binary mask, and there is an advantage that a complicated process is not required.

  As another example of the method of manufacturing a gradation mask used in the present invention, a semi-transparent film and a light-shielding film are patterned using a mask blank in which a semi-transparent film and a light-shielding film are laminated in this order on a transparent substrate. A first patterning step of forming a main pattern and a slit pattern of a translucent film, and an intermediate pattern of the light shielding film, and a second patterning step of forming only the intermediate pattern of the light shielding film to form a pattern of the light shielding film. The manufacturing method which has this.

An example of a method for manufacturing the above-described gradation mask is shown in FIG.
First, a mask blank 50 in which a translucent film 54 and a light shielding film 53 are laminated in this order on a transparent substrate 12 is prepared (FIG. 13A). Next, a positive resist material is applied onto the light shielding film 53 and baked for a predetermined time after the application to form the first resist film 51 (FIG. 13B). Next, pattern exposure and development are performed to form a first resist pattern 51 ′ (FIG. 13C). At this time, the first resist film 51 is removed in the transmissive region 21 in the obtained gradation mask, the first resist film 51 remains in the light shielding region 22 and the first semi-transparent region 23, and the first semi-transparent region 24 in the second semi-transparent region 24. The pattern exposure is performed so that one resist film 51 is patterned into a slit shape. Then, the light shielding film 53 exposed from the first resist pattern 51 ′ is etched, and then the portion where the lower semitransparent film 54 is exposed is further etched to leave the remaining first resist pattern 51 ′. Are removed to form a main pattern 14a and a slit pattern 14b of a semi-transparent film, and a light shielding film intermediate pattern 53 '(FIG. 13D). FIGS. 13A to 13D show the first patterning step.

  Next, a positive resist material is applied on the transparent substrate 12 on which the main pattern 14a and the slit pattern 14b of the semitransparent film and the light shielding film intermediate pattern 53 'are formed, and baked for a predetermined time after the application, whereby the second resist film 52 is formed (FIG. 13E). Subsequently, a second resist pattern 52 'is formed by performing pattern exposure and development (FIG. 13F). At this time, the second resist film 52 is removed in the first semi-transparent region 23 in the obtained gradation mask, the second resist film 52 remains in the transmissive region 21 and the light-shielding region 22, and semi-transparent in the second semi-transparent region 24. Pattern exposure is performed so that the second resist film 52 is patterned into a slit shape corresponding to the slit pattern 14b of the transparent film. Then, the light shielding film intermediate pattern 53 ′ exposed from the second resist pattern 52 ′ is etched, and the remaining second resist pattern 52 ′ is removed to form a pattern of the light shielding film 13 (FIG. 13 ( g)). FIGS. 13E to 13G show the second patterning step.

  In the above method, it is not necessary to perform the semitransparent film forming step in the middle of the manufacturing process of the gradation mask. For this reason, the risk (defect, dirt, etc.) at the time of film-forming of a semi-transparent film | membrane can be reduced. Further, TAT (Turn Around Time) can be shortened.

  For a method of manufacturing a gradation mask, reference can be made to JP-A-2005-84366, JP-A-2005-181827, JP-A-2005-208128, and JP-A-2006-18001.

(2) Method for forming different members In the present invention, three or more different members made of a photosensitive resin can be formed simultaneously.

  Examples of the three or more kinds of different members formed according to the present invention include various members formed through an exposure process. As the three or more kinds of dissimilar members that can be formed, any member that can be formed using a photosensitive resin may be used. Specifically, (1) spacers having different thicknesses and alignment control protrusions, and (2) thicknesses. Different spacers and overcoat layers, (3) spacers, transmissive portion orientation control projections and reflective portion orientation control projections, (4) spacers, orientation control projections and light shielding portions, (5) spacers, overcoat layers And a gap adjusting layer, (6) a spacer, an RGB overcoat layer, a W overcoat layer, and the like.

  In this step, first, the photosensitive resin layer is exposed through a gradation mask. The exposure method is not particularly limited, and, for example, proximity exposure can be performed in which a gradation mask is arranged with a gap of about several tens of μm from the surface of the photosensitive resin to perform exposure. By this exposure, when a negative photosensitive resin is used as the photosensitive resin, a curing reaction occurs at the irradiated portion, and when a positive photosensitive resin is used, an acid generating reaction occurs at the irradiated portion.

After the exposure, development is performed. The photosensitive resin layer is partially removed by development. When a negative photosensitive resin is used as the photosensitive resin, a portion cured by exposure remains and other portions are selectively removed. The curing reaction proceeds sufficiently at the part exposed from the transmission region, whereas the curing reaction becomes insufficient at the part exposed from the second translucent region, and the second is performed at the part exposed from the first translucent region. Since the curing reaction is further insufficient as compared with the portion exposed from the translucent region, three or more kinds of different members having different shapes, thicknesses, heights, and the like can be formed simultaneously. In addition, when a positive photosensitive resin is used as the photosensitive resin, the portion decomposed by the exposure is selectively removed, and the other portions remain. The acid generation reaction proceeds sufficiently in the part exposed from the transmission region, whereas the acid generation reaction becomes insufficient in the part exposed from the second translucent region, and in the part exposed from the first translucent region. Since the acid generation reaction is further insufficient as compared with the portion exposed from the second translucent region, three or more kinds of different members having different shapes, thicknesses, heights, and the like can be formed simultaneously.
This development can be performed according to a general development method.

  Moreover, you may heat-process (post-bake) with respect to the formed dissimilar member after exposure and image development. This heat treatment can be appropriately set, for example, at a temperature of 100 to 250 ° C. and a treatment time of about 10 to 60 minutes.

3. Other Steps In the present invention, a step of forming various members in the color filter can be performed as necessary before the photosensitive resin layer forming step or after the different member forming step.

For example, a colored layer forming step of forming a colored layer on the substrate can be performed. The colored layer is usually composed of a red pattern, a green pattern, and a blue pattern.
The colored layer can be formed, for example, by a pigment dispersion method using a photosensitive resin composition containing a desired colorant. Furthermore, as a method for forming the colored layer, a general method such as a printing method, an electrodeposition method, a transfer method, or an ink jet method can be used.
The thickness of the colored layer can be set, for example, in the range of 0.5 to 3.0 μm.

Further, for example, a light shielding part forming step of forming a light shielding part (sometimes referred to as a black matrix) on the substrate can be performed. The light shielding portion can be formed by forming a metal thin film such as chromium by sputtering, vacuum deposition, or the like and patterning the metal thin film. In this case, the thickness of the light-shielding part can be about 200 to 5000 mm.
The light shielding part is formed by forming a resin layer using a polyimide resin composition, an acrylic resin composition, an epoxy resin composition, or the like containing light shielding particles such as carbon fine particles, and patterning the resin layer. You can also Furthermore, the light shielding part can also be formed by forming a resin layer using a photosensitive resin composition containing light shielding particles such as carbon fine particles and metal oxide, and patterning the resin layer.

Further, for example, a transparent electrode layer forming step of forming a transparent electrode layer on the substrate can be performed. Examples of the material for forming the transparent electrode layer include indium tin oxide (ITO), zinc oxide (ZnO), tin oxide (SnO), and alloys thereof.
As a film forming method of the transparent electrode layer, for example, a general film forming method such as a sputtering method, a vacuum evaporation method, a CVD method, or the like can be used.
The thickness of the transparent electrode layer can be, for example, about 200 to 5000 mm.

Further, for example, a gap adjusting layer forming step for forming a gap adjusting layer on the substrate can be performed. Examples of the material for forming the gap adjusting layer include photosensitive acrylic resin, photosensitive polyimide, positive resist, cardo resin, polysiloxane, benzocyclobutene, and the like.
As a method for forming the gap adjusting layer, the gap adjusting layer can be formed by using, for example, a photolithography method using the above material.

Furthermore, for example, an alignment film forming step of forming an alignment film so as to cover different members can be performed. The alignment film can be formed, for example, by applying an organic compound such as soluble polyimide, polyamic acid type polyimide, or modified polyimide by a general printing method or application method, and then baking. Such an alignment film does not require alignment treatment (rubbing).
The thickness of the alignment film can be about 500 to 1000 mm.

4). Applications The color filter manufacturing method of the present invention uses a predetermined gradation mask, and is therefore suitable for manufacturing a color filter for a liquid crystal display device, particularly for manufacturing a color filter for a large liquid crystal display device.
The color filter manufacturing method of the present invention can also be applied to manufacture of a substrate for a monochrome liquid crystal display device.

B. Color Filter The color filter of the present invention is manufactured using the above-described color filter manufacturing method.
The color filter of the present invention has a plurality of kinds of different members made of a photosensitive resin, and the photosensitive resins constituting the plurality of kinds of different members are the same. Preferably, the color filter has three or more kinds of different members made of the photosensitive resin.
Since the dissimilar members are described in the section of the color filter manufacturing method, description thereof is omitted here.
Further, other configurations of the color filter can be the same as those of a general color filter.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

Hereinafter, the present invention will be specifically described with reference to examples.
[Example 1]
(Production of gradation mask)
A commercially available photoresist (ip-3500, manufactured by Tokyo Ohka Kogyo Co., Ltd.) is placed on a conventional mask blank in which a chromium film (light-shielding film) is formed to a thickness of 100 nm on an optically polished 390 mm × 610 mm synthetic quartz substrate. After coating with a thickness of 600 nm and baking on a hot plate heated to 120 ° C. for 15 minutes, a desired light-shielding film intermediate pattern was drawn with a photomask laser drawing apparatus (LRS11000-TFT3 manufactured by Micronic Co., Ltd.).
Next, development was performed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resist pattern for a light shielding film.
Next, using the resist pattern as an etching mask, the chromium film was etched, and the remaining resist pattern was peeled off to obtain a desired light-shielding film intermediate pattern. A commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.) was used for etching the chromium film. The etching time for the chromium film was 60 seconds.

Next, the substrate on which the light-shielding film intermediate pattern is formed is subjected to pattern dimension inspection, pattern defect inspection, pattern correction as necessary, and washed well, and then the chromium oxynitride carbide film (translucent film) is subjected to the following conditions: A film was formed by a sputtering method.
<Film formation conditions>
・ Gas flow ratio Ar: CO ₂ : N ₂ = 1: 0.5: 0.5
・ Power: 1.5kW
・ Gas pressure: 3mTorr
・ Substrate transport speed: 62 cm / min
At this time, the thickness of the chromium oxynitride carbide film was set to 35 nm. FIG. 14 shows a spectral spectrum of the chromium oxynitride chromium carbide film.
Next, a commercially available photoresist (ip-3500 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied again on the chromium oxynitride carbide film at a thickness of 600 nm, and baked on a hot plate heated to 120 ° C. for 15 minutes. Subsequently, the image to be the main pattern and the slit pattern of the translucent film is drawn again with a laser drawing device (LRS11000-TFT3 manufactured by Micronic Co., Ltd.) and developed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.). Obtained.
Next, using the resist pattern as an etching mask, the semi-transparent film and the light-shielding film are etched with a commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.), and the main pattern and slit pattern of the semi-transparent film are obtained. In addition, a light shielding film pattern was obtained. Etching was performed on the translucent film and the light shielding film.
Finally, the remaining resist was peeled off, and after undergoing inspection processes such as pattern dimension inspection and pattern defect inspection, pattern correction was performed as necessary to obtain a gradation mask.

(Production of color filter)
As the substrate, a glass substrate (Corning 1737 glass) having a size of 300 mm × 400 mm and a thickness of 0.7 mm was prepared. After this substrate was washed according to a conventional method, a chromium thin film (thickness: 1000 mm) was formed on the entire surface of one side of the substrate by sputtering. A positive-type photosensitive resist (OFPR-800 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied onto the chromium thin film, and exposed and developed through a predetermined mask to form a resist pattern. Next, using this resist pattern as a mask, the chromium thin film was etched to form a black matrix having a line width of 20 μm and a pitch of 100 μm.

  Next, a negative photosensitive resin composition for a red pattern, a negative photosensitive resin composition for a green pattern, and a negative photosensitive resin composition for a blue pattern having the following compositions were prepared.

<Negative photosensitive resin composition for red pattern>
Red pigment (Ciba Specialty Chemicals Chromophthal Red A2B) 4.8 parts by weight Yellow pigment (BASF Pariotor Yellow D1819) 1.2 parts by weight Dispersant (Bicchemy Disperbic 161) 3 1.0 part by weight / monomer (SR399 manufactured by Sartomer) 4.0 parts by weight Polymer I 5.0 parts by weight initiator (Irgacure 907 manufactured by Ciba Specialty Chemicals) 1.4 parts by weight initiator (2, 2′-bis (o-chlorophenyl) -4,5,4 ′, 5′-tetraphenyl-1,2′-biimidazole) 0.6 part by weight / solvent (propylene glycol monomethyl ether acetate) 80.0 parts by weight

<Negative photosensitive resin composition for green pattern>
Green pigment (Avisia Monastral Green 9Y-C) 4.2 parts by weight Yellow pigment (BASF Pariotor Yellow D1819) 1.8 parts by weight Dispersant (Bicchemy Disperbic 161) 3.0 Parts by weight / monomer (SR399, manufactured by Sartomer) 4.0 parts by weight, polymer I 5.0 parts by weight, initiator (Irgacure 907, manufactured by Ciba Specialty Chemicals) 1.4 parts by weight, initiator (2,2 ′ -Bis (o-chlorophenyl) -4,5,4 ', 5'-tetraphenyl-1,2'-biimidazole) 0.6 parts by weight / solvent (propylene glycol monomethyl ether acetate) 80.0 parts by weight

<Negative photosensitive resin composition for blue pattern>
Blue pigment (BASF Heliogen Blue L6700F) 6.0 parts by weight Pigment derivative (Abyssia Solsperse 5000) 0.6 parts by weight Dispersant (Bic Chemie Dispersic 161) 2.4 parts by weight Monomer (SR399, manufactured by Sartomer) 4.0 parts by weight, Polymer I, 5.0 parts by weight, initiator (Irgacure 907, manufactured by Ciba Specialty Chemicals) 1.4 parts by weight, initiator (2,2'-bis (o -Chlorophenyl) -4,5,4 ', 5'-tetraphenyl-1,2'-biimidazole) 0.6 parts by weight / solvent (propylene glycol monomethyl ether acetate) 80.0 parts by weight

  The polymer I is based on 100 mol% of a copolymer of benzyl methacrylate: styrene: acrylic acid: 2-hydroxyethyl methacrylate = 15.6: 37.0: 30.5: 16.9 (molar ratio). 2-methacryloyloxyethyl isocyanate was added at 16.9 mol%, and the weight average molecular weight was 42500.

  Next, a negative photosensitive resin composition for red pattern is applied by spin coating so as to cover the black matrix on the glass substrate, exposed and developed through a photomask for red pattern, and the red pattern is formed. Formed. The red pattern was rectangular (100 μm × 300 μm).

Then, the green pattern and the blue pattern were formed by the same operation using the negative photosensitive resin composition for the green pattern and the negative photosensitive resin composition for the blue pattern. As a result, a colored layer in which a red pattern, a green pattern, and a blue pattern were arranged was formed.
Next, a transparent electrode layer (thickness 1500 mm) made of indium tin oxide (ITO) was formed by sputtering so as to cover the black matrix and the colored layer.

Next, a negative photosensitive resin composition (Optomer NN850 manufactured by JSR) was applied on the transparent electrode layer by spin coating, dried under reduced pressure, and prebaked at 100 ° C. for 3 minutes. Then, it exposed on the following conditions through said gradation mask.
<Exposure conditions>
・ Exposure amount: 100 mJ / cm ² (I-line conversion)
・ Exposure gap: 150μm

  Next, development was performed using an aqueous potassium hydroxide solution, and then heat treatment was performed at 230 ° C. for 30 minutes to simultaneously form three types of convex patterns. The cross-sectional shapes of these three types of patterns were observed with a scanning electron microscope, and the dimensions were measured. The results are shown in Table 1.

  By using the above-described gradation mask in the exposure process, two types of spacers (cell holding column spacers) having different heights and alignment control projections could be formed with desired dimensions.

[Example 2]
(Production of gradation mask)
A commercially available photoresist (ip-3500, manufactured by Tokyo Ohka Kogyo Co., Ltd.) is placed on a conventional mask blank in which a chromium film (light-shielding film) is formed to a thickness of 100 nm on an optically polished 390 mm × 610 mm synthetic quartz substrate. After coating with a thickness of 600 nm and baking on a hot plate heated to 120 ° C. for 15 minutes, a desired light-shielding film intermediate pattern was drawn with a photomask laser drawing apparatus (LRS11000-TFT3 manufactured by Micronic Co., Ltd.).
Next, development was performed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resist pattern for a light shielding film.
Next, using the resist pattern as an etching mask, the chromium film was etched, and the remaining resist pattern was peeled off to obtain a desired light-shielding film intermediate pattern. A commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.) was used for etching the chromium film. The etching time for the chromium film was 60 seconds.

Next, the substrate on which the light-shielding film intermediate pattern is formed is subjected to pattern dimension inspection, pattern defect inspection, pattern correction as necessary, and washed well, and then the chromium oxynitride carbide film (translucent film) is subjected to the following conditions: A film was formed by a sputtering method.
<Film formation conditions>
・ Gas flow ratio Ar: CO ₂ : N ₂ = 1: 0.5: 0.5
・ Power: 1.5kW
・ Gas pressure: 3mTorr
・ Substrate transport speed: 30 cm / min
At this time, the thickness of the chromium oxynitride carbide film was 75 nm. FIG. 14 shows a spectral spectrum of the chromium oxynitride chromium carbide film.
Next, a commercially available photoresist (ip-3500 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied again on the chromium oxynitride carbide film at a thickness of 600 nm, and baked on a hot plate heated to 120 ° C. for 15 minutes. Subsequently, the image to be the main pattern and the slit pattern of the translucent film is drawn again with a laser drawing device (LRS11000-TFT3 manufactured by Micronic Co., Ltd.) and developed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.). Obtained.
Next, using the resist pattern as an etching mask, the semi-transparent film and the light-shielding film are etched with a commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.), and the main pattern and slit pattern of the semi-transparent film are obtained. In addition, a light shielding film pattern was obtained. Etching was performed on the translucent film and the light shielding film.
Finally, the remaining resist was peeled off, and after undergoing inspection processes such as pattern dimension inspection and pattern defect inspection, pattern correction was performed as necessary to obtain a gradation mask.

(Production of color filter)
A glass substrate (Corning 1737 glass) having a size of 100 mm × 100 mm and a thickness of 0.7 mm was prepared as a substrate. After this substrate was washed according to a conventional method, a chromium thin film (thickness: 1000 mm) was formed on the entire surface of one side of the substrate by sputtering. A positive-type photosensitive resist (OFPR-800 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied onto the chromium thin film, and exposed and developed through a predetermined mask to form a resist pattern. Next, using this resist pattern as a mask, the chromium thin film was etched to form a black matrix having a line width of 20 μm and a pitch of 100 μm.

  Next, a negative photosensitive resin composition for a red pattern, a negative photosensitive resin composition for a green pattern, and a negative photosensitive resin composition for a blue pattern having the following compositions were prepared.

<Negative photosensitive resin composition for red pattern>
Red pigment (Ciba Specialty Chemicals Chromophthal Red A2B) 4.8 parts by weight Yellow pigment (BASF Pariotor Yellow D1819) 1.2 parts by weight Dispersant (Bicchemy Disperbic 161) 3 1.0 part by weight / monomer (SR399 manufactured by Sartomer) 4.0 parts by weight Polymer I 5.0 parts by weight initiator (Irgacure 907 manufactured by Ciba Specialty Chemicals) 1.4 parts by weight initiator (2, 2′-bis (o-chlorophenyl) -4,5,4 ′, 5′-tetraphenyl-1,2′-biimidazole) 0.6 part by weight / solvent (propylene glycol monomethyl ether acetate) 80.0 parts by weight

<Negative photosensitive resin composition for green pattern>
Green pigment (Avisia Monastral Green 9Y-C) 4.2 parts by weight Yellow pigment (BASF Pariotor Yellow D1819) 1.8 parts by weight Dispersant (Bicchemy Disperbic 161) 3.0 Parts by weight / monomer (SR399, manufactured by Sartomer) 4.0 parts by weight, polymer I 5.0 parts by weight, initiator (Irgacure 907, manufactured by Ciba Specialty Chemicals) 1.4 parts by weight, initiator (2,2 ′ -Bis (o-chlorophenyl) -4,5,4 ', 5'-tetraphenyl-1,2'-biimidazole) 0.6 parts by weight / solvent (propylene glycol monomethyl ether acetate) 80.0 parts by weight

<Negative photosensitive resin composition for blue pattern>
Blue pigment (BASF Heliogen Blue L6700F) 6.0 parts by weight Pigment derivative (Abyssia Solsperse 5000) 0.6 parts by weight Dispersant (Bic Chemie Dispersic 161) 2.4 parts by weight Monomer (SR399, manufactured by Sartomer) 4.0 parts by weight, Polymer I, 5.0 parts by weight, initiator (Irgacure 907, manufactured by Ciba Specialty Chemicals) 1.4 parts by weight, initiator (2,2'-bis (o -Chlorophenyl) -4,5,4 ', 5'-tetraphenyl-1,2'-biimidazole) 0.6 parts by weight / solvent (propylene glycol monomethyl ether acetate) 80.0 parts by weight

  The polymer I is based on 100 mol% of a copolymer of benzyl methacrylate: styrene: acrylic acid: 2-hydroxyethyl methacrylate = 15.6: 37.0: 30.5: 16.9 (molar ratio). 2-methacryloyloxyethyl isocyanate was added at 16.9 mol%, and the weight average molecular weight was 42500.

  Next, a negative photosensitive resin composition for red pattern is applied by spin coating so as to cover the black matrix on the glass substrate, exposed and developed through a photomask for red pattern, and the red pattern is formed. Formed. The red pattern was rectangular (100 μm × 300 μm).

  Then, the green pattern and the blue pattern were formed by the same operation using the negative photosensitive resin composition for the green pattern and the negative photosensitive resin composition for the blue pattern. As a result, a colored layer in which a red pattern, a green pattern, and a blue pattern were arranged was formed.

Next, a negative photosensitive resin composition (Optomer NN850 manufactured by JSR) was applied on the colored layer by a spin coating method, dried under reduced pressure, and prebaked at 100 ° C. for 3 minutes. Then, it exposed on the following conditions through said gradation mask.
<Exposure conditions>
・ Exposure amount: 100 mJ / cm ² (I-line conversion)
・ Exposure gap: 150μm

  Next, development was performed using an aqueous potassium hydroxide solution, followed by heat treatment at 230 ° C. for 30 minutes to form three types of patterns simultaneously. The cross-sectional shape of a part of these three types of patterns was observed with a scanning electron microscope, and the dimensions and the like of the three types of patterns were measured. The results are shown in Table 2.

  By using the above gradation mask for the exposure process, two types of spacers having different heights (cell holding column spacers) and an overcoat layer could be formed simultaneously.

[Comparative Example 1]
(Production of gradation mask)
A commercially available photoresist (ip-3500, manufactured by Tokyo Ohka Kogyo Co., Ltd.) is placed on a conventional mask blank in which a chromium film (light-shielding film) is formed to a thickness of 100 nm on an optically polished 390 mm × 610 mm synthetic quartz substrate. After coating with a thickness of 600 nm and baking on a hot plate heated to 120 ° C. for 15 minutes, a desired mask pattern main pattern and slit pattern are drawn by a photomask laser drawing device (Micronic LRS11000-TFT3). did.
Next, development was performed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resist pattern for a light shielding film.
Next, the chromium film was etched using the resist pattern as an etching mask, and the remaining resist pattern was peeled off to obtain the desired main pattern and slit pattern of the light-shielding film. A commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.) was used for etching the chromium film. The etching time for the chromium film was 60 seconds.

Next, the substrate on which the light-shielding film pattern is formed is subjected to pattern dimension inspection, pattern defect inspection, pattern correction as necessary, and after cleaning, a chromium oxynitride carbide film (translucent film) is sputtered under the following conditions: The film was formed by the method.
<Film formation conditions>
・ Gas flow ratio Ar: CO ₂ : N ₂ = 1: 0.5: 0.5
・ Power: 1.5kW
・ Gas pressure: 3mTorr
・ Substrate transport speed: 62 cm / min
At this time, the thickness of the chromium oxynitride carbide film was set to 35 nm. FIG. 14 shows a spectral spectrum of the chromium oxynitride chromium carbide film.
Next, a commercially available photoresist (ip-3500 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied again on the chromium oxynitride carbide film at a thickness of 600 nm, and baked on a hot plate heated to 120 ° C. for 15 minutes. Subsequently, an image serving as a main pattern of the translucent film was again drawn with a laser drawing apparatus (LRS11000-TFT3 manufactured by Micronic Co., Ltd.) and developed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resist pattern.
Next, using the resist pattern as an etching mask, the translucent film was etched with a commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.) to obtain a main pattern of the translucent film. Etching was performed on the translucent film.
Finally, the remaining resist is peeled off, and after undergoing inspection processes such as pattern dimension inspection and pattern defect inspection, pattern correction is performed as necessary, and the transmissive area, light-shielding area (light-shielding film main pattern), and first translucent area A gradation mask having (translucent film main pattern) and a fourth translucent region (light-shielding film slit pattern) was obtained.

(Production of color filter)
In the same manner as in Example 1, a black matrix, a colored layer, and a transparent electrode layer were formed on the substrate.

Next, a negative photosensitive resin composition (Optomer NN850 manufactured by JSR) was applied on the transparent electrode layer by spin coating, dried under reduced pressure, and prebaked at 100 ° C. for 3 minutes. Then, it exposed on the following conditions through said gradation mask.
<Exposure conditions>
・ Exposure amount: 100 mJ / cm ² (I-line conversion)
・ Exposure gap: 150μm

  Next, development was performed using an aqueous potassium hydroxide solution, and then heat treatment was performed at 230 ° C. for 30 minutes to simultaneously form three types of convex patterns. The cross-sectional shapes of these three types of patterns were observed with a scanning electron microscope, and the dimensions were measured. The results are shown in Table 3.

  When the above gradation mask was used in the exposure process, a spacer having a desired height could not be formed.

[Example 3]
(Production of gradation mask)
A commercially available photoresist (ip-3500, manufactured by Tokyo Ohka Kogyo Co., Ltd.) is placed on a conventional mask blank in which a chromium film (light-shielding film) is formed to a thickness of 100 nm on an optically polished 390 mm × 610 mm synthetic quartz substrate. After coating with a thickness of 600 nm and baking on a hot plate heated to 120 ° C. for 15 minutes, a desired light-shielding film intermediate pattern was drawn with a photomask laser drawing apparatus (LRS11000-TFT3 manufactured by Micronic Co., Ltd.).
Next, development was performed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resist pattern for a light shielding film.
Next, using the resist pattern as an etching mask, the chromium film was etched, and the remaining resist pattern was peeled off to obtain a desired light-shielding film intermediate pattern. A commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.) was used for etching the chromium film. The etching time for the chromium film was 60 seconds.

Next, the substrate on which the light-shielding film intermediate pattern is formed is subjected to pattern dimension inspection, pattern defect inspection, pattern correction as necessary, and after being washed well, the chromium film (translucent film) is sputtered under the following conditions. To form a film.
<Film formation conditions>
・ Gas flow ratio Ar: N ₂ = 4: 1
・ Power: 1.3kW
・ Gas pressure: 3.5mTorr
・ Substrate transport speed: 65 cm / min
The film thickness of the semitransparent film was 10 nm. The spectrum of the semitransparent film is shown in FIG.
Next, a commercially available photoresist (ip-3500 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was again applied on the semitransparent film at a thickness of 600 nm and baked on a hot plate heated to 120 ° C. for 15 minutes. Subsequently, the image to be the main pattern and the slit pattern of the translucent film is drawn again with a laser drawing device (LRS11000-TFT3 manufactured by Micronic Co., Ltd.) and developed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.). Obtained.
Next, using the resist pattern as an etching mask, the semi-transparent film and the light-shielding film are etched with a commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.), and the main pattern and slit pattern of the semi-transparent film are obtained. In addition, a light shielding film pattern was obtained. Etching was performed on the translucent film and the light shielding film.
Finally, the remaining resist is peeled off, and after undergoing inspection processes such as pattern dimension inspection and pattern defect inspection, pattern correction is performed as necessary, and the transmissive area, light-shielding area (light-shielding film main pattern), and first translucent area A gradation mask having a (translucent film main pattern) and a third semitransparent region (light shielding film auxiliary pattern / semitransparent film slit pattern) was obtained.

(Production of color filter)
In the same manner as in Example 1, a black matrix, a colored layer, and a transparent electrode layer were formed on the substrate.

Next, a positive photosensitive resin composition (LC130 manufactured by Rohm and Haas) was applied onto the transparent electrode layer by spin coating, dried under reduced pressure, and prebaked at 100 ° C. for 3 minutes. Then, it exposed on the following conditions through said gradation mask.
<Exposure conditions>
・ Exposure dose: 60 mJ / cm ² (I-line conversion)
・ Exposure gap: 150μm

  Next, development was performed using an aqueous potassium hydroxide solution, and then heat treatment was performed at 230 ° C. for 30 minutes to simultaneously form three types of convex patterns. The cross-sectional shapes of these three types of patterns were observed with a scanning electron microscope, and the dimensions were measured. The results are shown in Table 4.

  By using the above-described gradation mask in the exposure process, two types of spacers (cell holding column spacers) having different heights and alignment control projections could be formed with desired dimensions.

[Comparative Example 2]
(Production of gradation mask)
A commercially available photoresist (ip-3500, manufactured by Tokyo Ohka Kogyo Co., Ltd.) is placed on a conventional mask blank in which a chromium film (light-shielding film) is formed to a thickness of 100 nm on an optically polished 390 mm × 610 mm synthetic quartz substrate. After coating with a thickness of 600 nm and baking on a hot plate heated to 120 ° C. for 15 minutes, a desired light-shielding film intermediate pattern was drawn with a photomask laser drawing apparatus (LRS11000-TFT3 manufactured by Micronic Co., Ltd.).
Next, development was performed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resist pattern for a light shielding film.
Next, using the resist pattern as an etching mask, the chromium film was etched, and the remaining resist pattern was peeled off to obtain a desired light-shielding film intermediate pattern. A commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.) was used for etching the chromium film. The etching time for the chromium film was 60 seconds.

Next, the substrate on which the light-shielding film intermediate pattern is formed is subjected to pattern dimension inspection, pattern defect inspection, pattern correction as necessary, and after being thoroughly cleaned, a chromium film (first translucent film) is sputtered under the following conditions: The film was formed by the method.
<Film formation conditions>
・ Gas flow ratio Ar: N ₂ = 4: 1
・ Power: 1.3kW
・ Gas pressure: 3.5mTorr
・ Substrate transport speed: 65 cm / min
The film thickness of the first translucent film was 10 nm. The spectrum of the first translucent film is shown in FIG.
Next, a commercially available photoresist (ip-3500, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was again applied on the first translucent film at a thickness of 600 nm and baked on a hot plate heated to 120 ° C. for 15 minutes. Subsequently, an image to be the main pattern of the first translucent film is drawn again with a laser drawing apparatus (LRS11000-TFT3 manufactured by Micronic) and developed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resist pattern. It was.
Next, using the resist pattern as an etching mask, the first translucent film was etched with a commercially available cerium nitrate wet etchant (MR-ES, manufactured by The Inktec Co., Ltd.) to obtain a main pattern of the first translucent film. . Etching was performed on the first translucent film.

Next, the substrate on which the light-shielding film intermediate pattern and the main pattern of the one semi-transparent film are formed is subjected to pattern dimension inspection, pattern defect inspection, pattern correction as necessary, and washed well, and then the chromium film (second semi-transparent) Film) was formed by sputtering under the following conditions.
<Film formation conditions>
・ Gas flow ratio Ar: N ₂ = 4: 1
・ Power: 1.3kW
・ Gas pressure: 3.5mTorr
-Substrate transport speed: 45 cm / min
The film thickness of the second translucent film was 30 nm. The spectrum of the second translucent film is shown in FIG.
Next, a commercially available photoresist (ip-3500, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was again applied on the second translucent film at a thickness of 600 nm and baked on a hot plate heated to 120 ° C. for 15 minutes. Subsequently, the image that becomes the main pattern of the second translucent film is drawn again with a laser drawing device (LRS11000-TFT3 manufactured by Micronic Co., Ltd.) and developed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Co., Ltd.) to obtain a resist pattern. It was.
Next, using the resist pattern as an etching mask, the second semitransparent film and the light-shielding film are etched with a commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.), and the main pattern of the second semitransparent film Got. Etching was performed on the second translucent film and the light shielding film.
Lastly, the remaining resist is stripped, and after undergoing inspection processes such as pattern dimension inspection and pattern defect inspection, pattern correction is performed as necessary, so that a transmissive area, a light-shielding area (light-shielding film main pattern), and a semi-transparent area a ( A gradation mask having a first translucent film main pattern) and a translucent region b (second translucent film main pattern) was obtained.

(Production of color filter)
In the same manner as in Example 1, a black matrix, a colored layer, and a transparent electrode layer were formed on the substrate.

Next, a positive photosensitive resin composition (LC130 manufactured by Rohm and Haas) was applied onto the transparent electrode layer by spin coating, dried under reduced pressure, and prebaked at 100 ° C. for 3 minutes. Then, it exposed on the following conditions through said gradation mask.
<Exposure conditions>
・ Exposure dose: 60 mJ / cm ² (I-line conversion)
・ Exposure gap: 150μm

  Next, development was performed using an aqueous potassium hydroxide solution, and then heat treatment was performed at 230 ° C. for 30 minutes to simultaneously form three types of convex patterns. The cross-sectional shapes of these three types of patterns were observed with a scanning electron microscope, and the dimensions were measured. The results are shown in Table 5.

  Similar results were obtained in Comparative Example 2 and Example 3. In Comparative Example 2, it took about 1.5 times as much cost to manufacture the mask as compared with Example 3, so it was confirmed that the cost can be reduced by using the gradation mask of the configuration of the present invention.

DESCRIPTION OF SYMBOLS 1 ... Board | substrate 2 ... Light-shielding part 3 ... Colored layer 4 ... Transparent electrode layer 5 ... Photosensitive resin layer 11, 61 ... Tone mask 12, 62 ... Transparent substrate 13, 63 ... Light-shielding film 13a ... Main pattern of light-shielding film 13b ... Light-shielding film slit pattern 63b ... Light-shielding film auxiliary pattern 63c ... Light-shielding film auxiliary pattern openings 14, 64 ... Translucent film 14a ... Translucent film main pattern 14b ... Translucent film slit pattern 64b ... Semi-transparent film Auxiliary pattern 64c ... Semi-transparent film auxiliary pattern opening 21, 71 ... Transmission region 22, 72 ... Light-shielding region 23, 73 ... First semi-transparent region 24, 74 ... Second semi-transparent region 25, 75 ... Third Translucent area 26, 76 ... 4th translucent area 31a ... High spacer 31b ... Low spacer 31c ... Protrusion for orientation control

Claims (9)

A photosensitive resin layer forming step of forming a photosensitive resin layer made of a photosensitive resin on a substrate; and a plurality of the photosensitive resin layers formed by exposing and developing the photosensitive resin layer using a gradation mask. A method for producing a color filter having a different member forming step for simultaneously forming different kinds of different members,
The gradation mask includes a transparent substrate, a light-shielding film formed in a pattern on the transparent substrate, and a translucent film having a transmittance adjusting function (the phase difference is substantially a half wavelength of the used wavelength or an odd multiple thereof). A transparent region having only the transparent substrate, a light-shielding region in which a main pattern of the light-shielding film is provided on the transparent substrate, and the semi-transparent on the transparent substrate. A method for producing a color filter, wherein only the auxiliary pattern of the film is provided, and the opening of the auxiliary pattern of the semitransparent film has a second semitransparent region having a dimension less than or equal to a resolution limit.   The gradation mask is provided with an auxiliary pattern of the light-shielding film and a pattern of the semi-transparent film on the transparent substrate, and at least one of the auxiliary pattern of the light-shielding film and the opening has a dimension equal to or less than a resolution limit. 2. The method for producing a color filter according to claim 1, further comprising a third translucent region in which the translucent film is formed on the transparent substrate at an opening of the auxiliary pattern of the light shielding film. . A photosensitive resin layer forming step of forming a photosensitive resin layer made of a photosensitive resin on a substrate; and a plurality of the photosensitive resin layers formed by exposing and developing the photosensitive resin layer using a gradation mask. A method for producing a color filter having a different member forming step for simultaneously forming different kinds of different members,
The gradation mask includes a transparent substrate, a light-shielding film formed in a pattern on the transparent substrate, and a translucent film having a transmittance adjusting function, the transmission region having only the transparent substrate, and the transparent A light shielding region where the main pattern of the light shielding film is provided on the substrate, and an auxiliary pattern of the light shielding film and a pattern of the semitransparent film are provided on the transparent substrate, and an opening of the auxiliary pattern of the light shielding film is uncovered. And a third translucent region having a dimension less than an image limit and having the translucent film formed on the transparent substrate at the opening of the auxiliary pattern of the light-shielding film. Method.   4. The method of manufacturing a color filter according to claim 2, wherein the semi-transparent film is formed in the entire area of the third semi-transparent region in the gradation mask. 5.   5. The color according to claim 1, wherein the gradation mask has a first semi-transparent region in which only a main pattern of the semi-transparent film is provided on the transparent substrate. A method for manufacturing a filter.   6. The color filter manufacturing method according to claim 1, wherein the auxiliary pattern has a slit shape in the gradation mask. A photosensitive resin layer forming step of forming a photosensitive resin layer made of a photosensitive resin on a substrate; and exposing and developing the photosensitive resin layer using a gradation mask, and developing the photosensitive resin layer 3. A method of manufacturing a color filter having a different member forming step of simultaneously forming different members of a species or more,
The gradation mask includes a transparent substrate, a light-shielding film formed in a pattern on the transparent substrate, and a translucent film having a transmittance adjusting function (the phase difference is substantially a half wavelength of the used wavelength or an odd multiple thereof). And the semitransparent film pattern comprises a main pattern and a slit pattern having a slit width less than or equal to a resolution limit in exposure in the different member forming step, A transmissive region having only a transparent substrate; a light-shielding region in which the pattern of the light-shielding film is provided on the transparent substrate; and a first semi-transparent region in which only the main pattern of the semi-transparent film is provided on the transparent substrate; And a second semi-transparent region in which only the slit pattern of the semi-transparent film is provided on the transparent substrate.   The pattern of the light shielding film includes a main pattern and a slit pattern having a slit width equal to or less than a resolution limit in exposure in the different member forming step, and the light shielding region is formed on the transparent substrate on the main surface of the light shielding film. The gradation mask has a third semi-transparent region in which a slit pattern of the light-shielding film and a main pattern of the semi-transparent film are further provided on the transparent substrate. The manufacturing method of the color filter of Claim 7.   A color filter manufactured using the method for manufacturing a color filter according to claim 1.

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