JP2013092710A - Liquid crystal device, method for manufacturing liquid crystal device, and electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid crystal device which adopts a light reflection preventing structure in a pixel electrode and enables bright display, a method for manufacturing a liquid crystal device, and electronic equipment provided with the liquid crystal device.SOLUTION: The liquid crystal device comprises: an element substrate 10 as a first substrate; an opposing substrate 20 as a second substrate; a liquid crystal layer 50 sandwiched between the element substrate 10 and the opposing substrate 20; a pixel electrode layer 15; a transistor 30 corresponding to the pixel electrode layer 15; and an interlayer insulating film 12 which is provided between the transistor 30 and the pixel electrode layer 15 and has a contact hole CNT2 formed therein. The pixel electrode layer 15 includes, in order from the second interlayer insulating film 12 side, a first light transmitting layer 15a having conductivity, a second light transmitting layer 15b which has a refractive index smaller than that of the first light transmitting layer 15a and has insulation property, and a third light transmitting layer 15c which has a refractive index larger than that of the second light transmitting layer 15b and has conductivity. The first light transmitting layer 15a and the third light transmitting layer 15c are electrically connected to each other in the contact hole CNT2.

Description

  The present invention relates to a liquid crystal device, a method for manufacturing the liquid crystal device, and an electronic apparatus including the liquid crystal device.

As the liquid crystal device and the manufacturing method thereof, a reflection type liquid crystal display element used in a projector, a projection television and the like and a manufacturing method thereof are known (Patent Document 1).
In this reflection type liquid crystal display element, a liquid crystal layer is sandwiched between a semiconductor substrate on which a pixel electrode having light reflectivity is formed and a transparent substrate on which an antireflection film is formed. The antireflection film facing the pixel electrode with the liquid crystal layer interposed therebetween includes a first transparent film having a first refractive index and a second transparent film having a second refractive index smaller than the first refractive index. A third transparent film having a third refractive index larger than the second refractive index is laminated in order. An example is shown in which the second transparent film is formed of a silicon oxide film as an insulating film, and the first and third transparent films are formed of an ITO film. The third transparent film opposite to is used as a transparent electrode. Thereby, the reflected light generated at the interface between the transparent substrate and the liquid crystal layer is reduced, and interference fringes caused by the interference between the incident light incident on the transparent substrate and the reflected light can be reduced.

As another example using the antireflection film, one of a pair of substrates having a reflective display region and a transmissive display region in a pixel region and sandwiching a liquid crystal layer is disposed on the light emission side. A liquid crystal display device having a transparent multilayer film (corresponding to the antireflection film) formed by laminating a plurality of films having different refractive indexes on the surface opposite to the liquid crystal layer is disclosed (Patent Document 2).
The transparent laminated film includes a first transparent conductive film, a transparent film, and a second transparent conductive film, and electrically connects the first transparent conductive film and the second transparent conductive film. Accordingly, it is possible to provide a liquid crystal display device that has an antistatic function, prevents reflection of light in a short wavelength region, and provides a good display.

JP 2007-178774 A JP 2009-217213 A

In the reflective liquid crystal display element of Patent Document 1 and the liquid crystal display device of Patent Document 2, the antireflection film is applied to the substrate on the side where light enters the liquid crystal layer. It is conceivable to apply an antireflection film structure to prevent unnecessary reflection of light on the pixel electrode side. In that case, one of the two transparent conductive films may be electrically connected to the switching element as a pixel electrode.
However, there is a possibility that a parasitic capacitance is generated between one transparent conductive film electrically connected to the switching element and the other transparent conductive film, so that an appropriate driving potential cannot be applied to the liquid crystal layer. Therefore, it is necessary to electrically connect the two transparent conductive films to prevent the generation of parasitic capacitance. In the above-mentioned Patent Document 2, the first and second transparent conductive films are formed in a wider range than the transparent film sandwiched between them, and the first transparent conductive film and the second transparent conductive film are directly overlapped on the outer peripheral portion. Connected. Applying such a connection method is not preferable because a difference in light transmittance occurs between the outer peripheral portion of the pixel electrode and the inside thereof. That is, when applying the structure of the antireflection film to the pixel electrode, there is a problem that it is necessary to establish an appropriate and simple method for electrically connecting the transparent conductive films.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 A liquid crystal device according to this application example is sandwiched between a first substrate, a second substrate disposed so as to face the first substrate, and the first substrate and the second substrate. A liquid crystal layer, a pixel electrode layer provided between the first substrate and the liquid crystal layer, a transistor provided between the first substrate and the pixel electrode layer and corresponding to the pixel electrode layer; An interlayer insulating film provided between the transistor and the pixel electrode layer and having a contact hole formed therein, wherein the pixel electrode layer is formed in order from the interlayer insulating film side. A translucent layer, an insulating second translucent layer having a refractive index smaller than that of the first translucent layer, and a conductive third translucent layer having a refractive index greater than that of the second translucent layer. A first light-transmitting layer and a third light-transmitting layer in the contact hole. Doo is characterized in that it is electrically connected.

  According to this configuration, the light-reflection preventing structure is introduced into the pixel electrode layer, and the first light-transmitting layer and the third light-transmitting layer having conductivity with each other in the contact hole used for electrical connection with the transistor. Make electrical connection with the layers. Accordingly, it is not necessary to newly provide a dedicated contact portion (for example, a contact hole) for electrically connecting the first light transmissive layer and the third light transmissive layer, and has a high transmittance with respect to incident light. A liquid crystal device including a pixel electrode layer can be provided.

Application Example 2 In the liquid crystal device according to the application example described above, the second light-transmitting layer is not formed in the contact hole.
According to this configuration, since the second light transmissive layer is not formed in the contact hole, if the first light transmissive layer and the third light transmissive layer are formed so as to cover the contact holes, respectively, The first light transmissive layer and the third light transmissive layer can be reliably electrically connected.

Application Example 3 In the liquid crystal device according to the application example described above, a conductive fourth light-transmitting layer formed between the second substrate and the liquid crystal layer, the fourth light-transmitting layer, and the An insulating fifth light-transmitting layer that is provided between the liquid crystal layer and has a refractive index smaller than that of the fourth light-transmitting layer, and is provided between the fifth light-transmitting layer and the liquid crystal layer. In addition, a common electrode layer including a conductive sixth transparent layer having a higher refractive index than that of the fifth transparent layer may be provided.
According to this configuration, not only the pixel electrode layer but also the second substrate facing the pixel electrode layer has the common electrode layer in which the light reflection preventing structure is incorporated, so that the pixel transmittance is high and a brighter display is possible. Liquid crystal device can be realized.

Application Example 4 In the liquid crystal device according to the application example, the contact hole is formed in a corner portion of the pixel electrode layer, and the contact hole and the planar surface are formed on at least one of the first substrate and the second substrate. It is preferable to have a light-shielding portion that overlaps visually.
According to this configuration, the liquid crystal molecule alignment unevenness caused by the unevenness generated in the contact hole portion is hidden by the light shielding portion, so that a liquid crystal device with a good appearance can be realized.

  Application Example 5 A method for manufacturing a liquid crystal device according to this application example is a method for manufacturing a liquid crystal device having a liquid crystal layer sandwiched between a first substrate and a second substrate, and is formed on the first substrate. A step of forming an interlayer insulating film covering the transistor; a step of forming a contact hole penetrating the interlayer insulating film; and covering the contact hole so as to be electrically connected to the transistor. Forming a light-sensitive film on the interlayer insulating film, and using a vapor deposition method, forming an inorganic insulating material from an oblique direction with respect to a normal direction of the substrate on which the contact hole is formed; Forming a second light-transmitting film having a refractive index smaller than that of the first light-transmitting film on the first light-transmitting film in a region excluding a part of a side surface of the contact hole; Cover the second light-transmitting Forming a conductive third translucent film having a higher refractive index than the film on the second translucent film, and patterning at least the first translucent film and the third translucent film And a step of forming a pixel electrode layer.

  According to this method, in the step of forming the second light-transmitting film, the inorganic insulating material is formed from the oblique direction with respect to the contact hole opened in the normal direction of the substrate by the vapor deposition method. A portion where the second light-transmitting film is not formed is formed on a part of the side surface of the contact hole which is shaded with respect to the direction. If a conductive third light-transmitting layer is formed in a portion where the insulating second light-transmitting layer is not formed, the first light-transmitting layer and the third light-transmitting layer are electrically connected within the contact hole. Can be connected to. That is, it is possible to manufacture a liquid crystal device in which a pixel electrode layer having a light reflection prevention structure and having a high transmittance with respect to incident light can be controlled by a transistor.

Application Example 6 In the method of manufacturing a liquid crystal device according to the application example, the contact hole is formed in a corner portion of the pixel electrode layer, and the forming step of the second light-transmitting film includes the contact hole. As a reference, it is preferable to form the second light-transmitting film by depositing an inorganic insulating material in an oblique direction from the longer length to the outer periphery of the pixel electrode layer toward the corner.
According to this method, a part of the side surface of the contact hole having a longer length to the outer periphery of the pixel electrode layer with respect to the contact hole becomes a shadow when the inorganic insulating material is formed. When the third light-transmitting film is formed, the first light-transmitting film and the third light-transmitting film are reliably contacted without being affected by the second light-transmitting film previously formed. And can be electrically connected.

  Application Example 7 Another method for manufacturing a liquid crystal device according to this application example is a method for manufacturing a liquid crystal device having a liquid crystal layer sandwiched between a first substrate and a second substrate, which is formed on the first substrate. A step of forming an interlayer insulating film covering the formed transistor, a step of forming a contact hole penetrating the interlayer insulating film, and a conductive first layer so as to cover the contact hole and be electrically connected to the transistor. Forming a first light-transmitting film on the interlayer insulating film and forming an insulating second light-transmitting film having a refractive index smaller than that of the first light-transmitting film on the first light-transmitting film; A step of removing the portion of the second light-transmitting film that covers the contact hole; and a conductive third material that covers the contact hole and has a higher refractive index than the second light-transmitting film. A translucent film is formed on the second translucent film And extent, characterized by comprising a step of forming a pixel electrode layer is patterned and said at least the first transparent film third transparent film.

  According to this method, since the insulating second light-transmitting film formed in the contact hole is removed, the first light-transmitting film and the third light-transmitting film can be more reliably connected to each other in the contact hole. Can be connected.

Application Example 8 In the method for manufacturing a liquid crystal device according to the application example described above, a step of forming a conductive fourth light-transmitting layer on the side of the second substrate facing the liquid crystal layer; Forming an insulating fifth light-transmitting layer having a refractive index smaller than that of the light-transmitting layer on the fourth light-transmitting layer; and a conductive material having a refractive index higher than that of the fifth light-transmitting layer. Forming a sixth translucent layer on the fifth translucent layer.
According to this method, the light reflection preventing structure is incorporated not only in the pixel electrode layer but also in the second substrate facing the pixel electrode layer, so that a liquid crystal device with high pixel transmittance and capable of brighter display is manufactured. be able to.

Application Example 9 An electronic apparatus according to this application example includes the liquid crystal device described in the application example.
According to this configuration, it is possible to provide a high-quality electronic device that realizes a high transmittance of pixels and enables bright display.

(A) is a schematic plan view showing the configuration of the liquid crystal device, (b) is a schematic cross-sectional view showing the structure of the liquid crystal device taken along line H-H ′ of (a). FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of the liquid crystal device. FIG. 4 is a cross-sectional view illustrating a detailed structure of a pixel in a liquid crystal device. (A)-(e) is a schematic sectional drawing which shows the manufacturing method of a liquid crystal device. (A) And (b) is a schematic plan view which shows arrangement | positioning of the contact hole in a pixel electrode layer. (A)-(d) is a schematic sectional drawing which shows the manufacturing method of the liquid crystal device of 2nd Embodiment. Schematic which shows the structure of the projection type display apparatus as an electronic device. FIG. 6 is a schematic cross-sectional view illustrating a pixel structure of a liquid crystal device according to a modification.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized.

  In the following embodiments, for example, when “on the substrate” is described, the substrate is disposed so as to be in contact with the substrate, or is disposed on the substrate via another component, or the substrate. It is assumed that a part is arranged so as to be in contact with each other and a part is arranged via another component.

(First embodiment)
In this embodiment, an active matrix type liquid crystal device including a thin film transistor as a pixel switching element will be described as an example. This liquid crystal device can be suitably used as, for example, a light modulation element (liquid crystal light valve) of a projection type display device (liquid crystal projector) described later.

<Liquid crystal device>
First, the liquid crystal device of this embodiment will be described with reference to FIGS. 1A is a schematic plan view showing the configuration of the liquid crystal device, FIG. 1B is a schematic cross-sectional view showing the structure of the liquid crystal device taken along the line HH ′ of FIG. 1A, and FIG. FIG. 3 is a cross-sectional view showing a detailed structure of a pixel in the liquid crystal device.

  As shown in FIGS. 1A and 1B, a liquid crystal device 100 according to this embodiment includes an element substrate 10 as a first substrate and a counter substrate 20 as a second substrate, which are arranged to face each other, and a pair of these substrates. And the liquid crystal layer 50 sandwiched between the two.

The element substrate 10 can be, for example, a transparent quartz substrate or a glass substrate, and is bonded to the counter substrate 20 via a sealing material 40 that is slightly larger than the counter substrate 20 and arranged in a frame shape without a break. Yes. A liquid crystal having a negative dielectric anisotropy is sealed in a region surrounded by the sealing material 40 to form a liquid crystal layer 50.
In this embodiment, liquid crystal is sealed (filled) between a pair of substrates by placing a sealing material 40 along the outer periphery of one of the pair of substrates, and using the arranged sealing material 40 as a bank. A predetermined amount of liquid crystal is dropped inside. An ODF (One Drop Fill) method in which one substrate and the other substrate are bonded under reduced pressure is employed.
For the sealing material 40, for example, an adhesive such as a thermosetting or ultraviolet curable epoxy resin is employed. A spacer (not shown) is mixed in the sealing material 40 to keep the distance between the pair of substrates constant.

On the inner side of the seal material 40, a parting portion 21 is provided so as to surround the pixel region E.
In the pixel region E, a plurality of pixels P are arranged in a matrix. The pixel region E may include a plurality of dummy pixels arranged so as to surround a plurality of effective pixels P that contribute to display. Although not shown in FIG. 1, the pixel region E is also provided with a light shielding portion (black matrix; BM) that divides a plurality of pixels P in a plane.

A data line driving circuit 101 is provided between the sealing material 40 along one side of the element substrate 10 and the one side. Further, an inspection circuit 103 is provided inside the sealing material 40 along the other one side facing the one side. Further, a scanning line driving circuit 102 is provided inside the sealing material 40 along the other two sides orthogonal to the one side and facing each other. A plurality of wirings 105 that connect the two scanning line driving circuits 102 are provided on the inner side of the sealing material 40 along the other one side facing the one side. Wirings connected to the data line driving circuit 101 and the scanning line driving circuit 102 are connected to a plurality of external connection terminals 104 arranged along the one side.
Hereinafter, the direction along the one side will be referred to as the X direction, and the direction along the other two sides orthogonal to the one side and facing each other will be described as the Y direction.

As shown in FIG. 1B, on the surface of the element substrate 10 on the liquid crystal layer 50 side, a pixel electrode layer 15 provided for each pixel P and a thin film transistor (Thin Film Transistor; hereinafter referred to as TFT) 30), signal wirings, and an alignment film 18 that covers the plurality of pixel electrode layers 15 are formed. The pixel electrode layer 15 is a light reflection layer in which light-transmitting layers having different refractive indexes are stacked so that light can pass through the element substrate 10 with high transmittance (in other words, low reflectance) over the visible light wavelength range. A prevention structure is employed, which will be described in detail later.
Further, a light shielding structure is employed that prevents light from entering the semiconductor layer in the TFT 30 and causing a light leakage current to flow, resulting in an inappropriate switching operation.

  For example, a transparent substrate such as a quartz substrate or a glass substrate is used as the counter substrate 20. On the surface on the liquid crystal layer 50 side, a parting part 21, a planarization layer 22 formed so as to cover the parting part 21, A common electrode layer 23 provided so as to cover the planarization layer 22 over at least the pixel region E, and an alignment film 24 covering the common electrode layer 23 are provided.

  The parting portion 21 is made of, for example, a light-shielding metal or an oxide or nitride of the metal, and is provided at a position overlapping the scanning line driving circuit 102 and the inspection circuit 103 in a plan view as shown in FIG. ing. Thus, the light incident from the counter substrate 20 side is shielded, and the malfunction of the peripheral circuits including these drive circuits due to the light is prevented. Further, unnecessary stray light is shielded from entering the pixel region E to ensure high contrast in the display of the pixel region E.

  The planarization layer 22 can be formed using, for example, a silicon oxide that is a light-transmitting inorganic insulating material by a plasma CVD method or the like. The film is formed with a film thickness of, for example, approximately 500 nm, which can alleviate surface irregularities caused by forming the parting portion 21 on the counter substrate 20.

The common electrode layer 23 is a light reflecting layer in which transparent layers having different refractive indexes are laminated so that light can pass through the counter substrate 20 with high transmittance (in other words, low reflectance) over the visible light wavelength range. A prevention structure is employed, which will be described in detail later.
As shown in FIG. 1A, the common electrode layer 23 is electrically connected to the wiring on the element substrate 10 side by the vertical conduction portions 106 provided at the four corners of the counter substrate 20.

  The alignment film 18 on the element substrate 10 side and the alignment film 24 on the counter substrate 20 side are set based on the optical design of the liquid crystal device 100. In this embodiment, an inorganic material such as SiOx (silicon oxide) is vapor-phased. An inorganic film that is grown using a growth method (oblique deposition method or oblique sputtering method), and liquid crystal molecules having negative dielectric anisotropy are aligned approximately vertically with a pretilt in a predetermined direction with respect to the alignment film surface. An alignment film is employed.

  The counter substrate 20 has a recess 20a formed so that a portion overlapping the sealing material 40 in a plan view is depressed at a certain depth. The recess 20a is formed from the outside of the parting portion 21 of the counter substrate 20 to the outer periphery of the substrate. The planarization layer 22, the common electrode layer 23, and the alignment film 24 are also formed in the recess 20a. When the thickness of the liquid crystal layer 50 when the element substrate 10 and the counter substrate 20 are arranged to face each other with the liquid crystal layer 50 interposed therebetween is d, the sealing material 40 includes the liquid crystal layer 50 in consideration of the depth of the recess 20a. A spacer (gap material) having a diameter larger than the thickness d is included. According to such a cross-sectional structure of the counter substrate 20, the element substrate 10 and the counter substrate 20 are arranged to be opposed to each other using the sealing material 40 including a spacer having a diameter larger than the thickness d of the liquid crystal layer 50. Therefore, variation in the thickness of the liquid crystal layer 50 can be suppressed.

  As shown in FIG. 2, the liquid crystal device 100 includes a plurality of scanning lines 3a and a plurality of data lines 6a as signal lines that are insulated and orthogonal to each other at least in the pixel region E, and capacitance lines parallel to the scanning lines 3a. 3b. The arrangement of the capacitor line 3b is not limited to this, and the capacitor line 3b may be arranged parallel to the data line 6a.

  A pixel electrode layer 15, a TFT 30, and a storage capacitor 16 are provided in a region divided by the scanning line 3a and the data line 6a, and these constitute a pixel circuit of the pixel P.

The scanning line 3 a is electrically connected to the gate of the TFT 30, and the data line 6 a is electrically connected to the source of the TFT 30. The pixel electrode layer 15 is electrically connected to the drain of the TFT 30.
The data line 6a is connected to the data line driving circuit 101 (see FIG. 1), and supplies image signals D1, D2,..., Dn supplied from the data line driving circuit 101 to the pixels P. The scanning line 3a is connected to a scanning line driving circuit 102 (see FIG. 1), and supplies scanning signals SC1, SC2,..., SCm supplied from the scanning line driving circuit 102 to each pixel P. The image signals D1 to Dn supplied from the data line driving circuit 101 to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each of a plurality of adjacent data lines 6a for each group. Good. The scanning line driving circuit 102 supplies the scanning signals SC1 to SCm to the scanning line 3a in a pulse-sequential manner at a predetermined timing.

In the liquid crystal device 100, the TFT 30 that is a switching element is turned on for a certain period by the input of the scanning signals SC1 to SCm, so that the image signals D1 to Dn supplied from the data line 6a are in the pixel electrode layer at a predetermined timing. 15 is written. A predetermined level of the image signals D1 to Dn written to the liquid crystal layer 50 through the pixel electrode layer 15 is constant between the pixel electrode layer 15 and the common electrode layer 23 arranged to face each other through the liquid crystal layer 50. Hold for a period.
In order to prevent the held image signals D1 to Dn from leaking, a storage capacitor 16 is connected in parallel with a liquid crystal capacitor formed between the pixel electrode layer 15 and the common electrode layer 23. The storage capacitor 16 is provided between the drain of the TFT 30 and the capacitor line 3b.

  Note that a data line 6a is connected to the inspection circuit 103 shown in FIG. 1A, and an operation defect or the like of the liquid crystal device 100 is confirmed by detecting the image signal in the manufacturing process of the liquid crystal device 100. Although it can be configured, it is omitted in the equivalent circuit of FIG. The inspection circuit 103 includes a sampling circuit that samples the image signal and supplies it to the data line 6a, and a precharge circuit that supplies a precharge signal of a predetermined voltage level to the data line 6a prior to the image signal. Also good.

  Such a liquid crystal device 100 is a transmission type, and adopts an optical design of a normally black mode in which a dark display is obtained when the pixel P is not driven and a normally white mode in which a bright display is obtained when the pixel P is not driven. Depending on the optical design, polarizing elements are arranged and used on the light incident side and the light emitting side.

As shown in FIG. 3, on the element substrate 10, the scanning line 3 a, the first interlayer insulating film 11 covering the scanning line 3 a, the TFT 30, the second interlayer insulating film 12 covering the TFT 30, and the pixel electrode layer 15. And an alignment film 18 covering the pixel electrode layer 15 are sequentially formed.
The scanning line 3a also serves as a light-shielding film that shields the semiconductor layer 30a of the TFT 30. For example, a single metal, an alloy, or a metal silicide containing at least one of metals such as Al, Ti, Cr, W, Ta, and Mo Polysilicide, nitride, or a laminate of these can be used.

  The semiconductor layer 30 a of the TFT 30 has an LDD (Light Doped Drain) structure formed by introducing impurities such as phosphorus into polysilicon, for example, and is formed on the first interlayer insulating film 11. A gate electrode 30g is formed at a position facing the channel region with a gate insulating film (not shown) covering the semiconductor layer 30a interposed therebetween. The gate electrode 30g and the scanning line 3a are electrically connected via a contact hole (not shown) penetrating the first interlayer insulating film 11.

The first source / drain region of the semiconductor layer 30a and the data line 6a are electrically connected via a contact hole CNT1 formed in the second interlayer insulating film 12. The conductive layer formed in the contact hole CNT1 functions as the source electrode 31.
The second source / drain region of the semiconductor layer 30a and the pixel electrode layer 15 are electrically connected via a contact hole CNT2 formed in the second interlayer insulating film 12.

  The pixel electrode layer 15 includes a conductive first light-transmitting layer 15a, an insulating second light-transmitting layer 15b having a refractive index smaller than that of the first light-transmitting layer 15a, and a second light-transmitting layer 15b. The conductive third translucent layer 15c having a refractive index higher than that of the first transparent layer 15c is laminated in order. The first light transmissive layer 15a and the third light transmissive layer 15c can be formed using a transparent conductive film such as ITO (Indium Tin Oxide), for example. The second light transmissive layer 15b can be formed using an inorganic insulating material such as light transmissive silicon oxide, and covers the first light transmissive layer 15a of the adjacent pixels P. That is, the second light transmissive layer 15b is also extended to a region between the pixel electrode layers 15, and is continuous between the first light transmissive layer 15a and the first light transmissive layer 15a of the adjacent pixel. Is formed. Thus, the light reflection preventing structure is configured by laminating the light transmitting layers having different refractive indexes.

  The alignment film 18 can be formed by depositing an inorganic material such as SiOx (silicon oxide) using a vapor phase growth method. The thickness of the alignment film 18 is approximately 750 nm.

  On the liquid crystal layer 50 side of the counter substrate 20 arranged to face the element substrate 10, the refractive index is smaller than that of the planarizing layer 22, the conductive fourth light-transmitting layer 23a, and the fourth light-transmitting layer 23a. An insulating fifth light-transmitting layer 23b, a conductive sixth light-transmitting layer 23c having a refractive index higher than that of the fifth light-transmitting layer 23b, and an alignment film 24 are sequentially formed. As with the pixel electrode layer 15, the common electrode layer 23 in which the antireflection structure is employed is formed by the fourth light transmissive layer 23 a, the fifth light transmissive layer 23 b, and the sixth light transmissive layer 23 c that are stacked. It is configured.

The fourth translucent layer 23a and the sixth translucent layer 23c can be formed using a transparent conductive film such as ITO, for example. The fifth light transmissive layer 23b can be formed using an inorganic insulating material such as silicon oxide, for example.
The sixth light-transmitting layer 23c closest to the liquid crystal layer 50 functions as a so-called common electrode and is electrically connected to the above-described vertical conduction portion 106. In addition, outside the pixel region E, for example, a contact hole is provided in the insulating fifth light-transmitting layer 23b to electrically connect the conductive fourth light-transmitting layer 23a and the sixth light-transmitting layer 23c. The electrical resistance may be further reduced as a common electrode.

  The alignment film 24 can be formed by depositing an inorganic material such as SiOx (silicon oxide) using a vapor phase growth method in the same manner as the alignment film 18 on the element substrate 10 side. The thickness of the alignment film 24 is approximately 750 nm.

  In such a transmissive liquid crystal device 100, for example, the light L incident from the counter substrate 20 side is transmitted through the common electrode layer 23, the liquid crystal layer 50, and the pixel electrode layer 15, and is emitted from the element substrate 10 side. A part of the light L is reflected at the interface of the light-transmitting material layers having different refractive indexes. On the counter substrate 20 side, for example, the light is reflected at the interface between the planarization layer 22 and the fourth light-transmitting layer 23a or the interface between the fifth light-transmitting layer 23b and the sixth light-transmitting layer 23c to be reflected light L1. . Similarly, on the element substrate 10 side, for example, the reflected light L2 is reflected at the interface between the first light transmissive layer 15a and the second light transmissive layer 15b or the interface between the third light transmissive layer 15c and the alignment film 18. It becomes. Since these reflected lights L1 and L2 are reflected through different optical paths, they have light phases corresponding to the respective optical path lengths.

  The intensity of the light L emitted from the element substrate 10 depends on the intensity of the reflected lights L1 and L2. Intensity of the reflected lights L1 and L2 is reduced by adopting a light reflection preventing structure in each of the pixel electrode layer 15 and the common electrode layer 23 so that the phases of light according to the optical path length cancel each other. Thereby, in the light L which permeate | transmits the liquid crystal device 100, the high transmittance | permeability over visible light wavelength range is implement | achieved.

  The light reflection preventing structure introduced into the pixel electrode layer 15 and the common electrode layer 23 sets the optical path length so that the phases of the reflected lights reflected at the interfaces of the light transmissive layers having different refractive indexes cancel each other. realizable. The optical path length is given by the product of the refractive index and the film thickness of the translucent layer. Therefore, the intensity of the reflected lights L1 and L2 can be minimized by setting the refractive index and the film thickness of each light-transmitting layer so as to satisfy the following formulas (1) and (2).

n1 × d1 + n2 × d2 = λ / 4 (1)
n2 × d2 + n3 × d3 = λ / 4 (2)
In the pixel electrode layer 15, n1 is the refractive index of the first light transmissive layer 15a, d1 is the film thickness of the first light transmissive layer 15a, n2 is the refractive index of the second light transmissive layer 15b, and d2 is the second light transmissive layer. The film thickness of the light transmissive layer 15b, n3 is the refractive index of the third light transmissive layer 15c, and d3 is the film thickness of the third light transmissive layer 15c.
In the common electrode layer 23, n1 is the refractive index of the fourth light transmissive layer 23a, d1 is the film thickness of the fourth light transmissive layer 23a, n2 is the refractive index of the fifth light transmissive layer 23b, and d2 is the fifth light transmissive layer 23a. The film thickness of the light transmissive layer 23b, n3 is the refractive index of the sixth light transmissive layer 23c, and d3 is the film thickness of the sixth light transmissive layer 23c.
λ is the wavelength of light. The refractive indexes n1, n2, and n3 of the respective light-transmitting layers depend on the light wavelength λ.

  For example, when the wavelength λ of light is 550 nm, the refractive index n1 and the refractive index n3 are approximately 2.0 when the first light-transmitting layer 15a and the third light-transmitting layer 15c are formed using ITO. Similarly, if the second light transmissive layer 15b is formed using silicon oxide, the refractive index n2 is about 1.46. Therefore, in order to satisfy the above formulas (1) and (2), for example, if the film thickness of the first light transmitting layer 15a and the third light transmitting layer 15c is about 30 nm, the film of the second light transmitting layer 15b. The thickness is approximately 50 nm. In order to ensure a uniform high transmittance in the visible light wavelength region (light wavelength: 400 nm to 700 nm), considering the decrease in the transmittance due to light interference in the short wavelength region, the conductive first It is desirable to make the film thickness of the first light-transmissive layer 15a and the third light-transmissive layer 15c thinner than 30 nm. Such setting of the refractive indexes n1, n2, n3 and the film thickness can of course be applied to the common electrode layer 23 side. That is, the conductive fourth translucent layer 23a and the sixth translucent layer 23c are formed using ITO, and the film thickness is less than 30 nm. The fifth light transmissive layer 23b is formed using silicon oxide and has a thickness of about 50 nm. The liquid crystal device 100 including the pixel electrode layer 15 and the common electrode layer 23 has a light transmittance of 96% or more over the visible light wavelength region (400 nm to 700 nm).

  From the viewpoint of properly driving the liquid crystal device 100, the sixth light-transmitting layer 23c closest to the liquid crystal layer 50 functions as the common electrode in the common electrode layer 23 incorporating the light reflection preventing structure. On the other hand, in the pixel electrode layer 15 incorporating the light reflection preventing structure, the first light-transmitting layer 15a on the side close to the TFT 30, that is, the side far from the liquid crystal layer 50 is connected to the drain electrode 32 of the TFT 30 as the pixel electrode. Then, the conductive third translucent layer 15c is in an electrically floating state. When a parasitic capacitance is generated between the first light-transmitting layer 15a and the third light-transmitting layer 15c facing each other through the insulating second light-transmitting layer 15b, an appropriate driving potential is applied to the liquid crystal layer 50. It becomes impossible. Therefore, in the present embodiment, the first light transmitting layer 15a and the third light transmitting layer 15c are electrically connected in the contact hole CNT2. A detailed connection method will be described in the following method for manufacturing a liquid crystal device.

<Method for manufacturing liquid crystal device>
A method for manufacturing the liquid crystal device of the present embodiment will be described with reference to FIGS. 4A to 4E are schematic cross-sectional views showing a method for manufacturing a liquid crystal device, and FIGS. 5A and 5B are schematic plan views showing the arrangement of contact holes in the pixel electrode layer.
As a method for forming the TFT 30 on the element substrate 10 side in the liquid crystal device 100 and the signal wiring connected thereto, a known method can be used as described above. Further, as described above, a known method can be used for forming the parting part 21 and the planarization layer 22 on the counter substrate 20 side. Hereinafter, as a method for manufacturing the liquid crystal device of the present embodiment, a method for electrically connecting the TFT 30 and the pixel electrode layer 15 in the element substrate 10 which is a characteristic part of the present invention will be described. 4A to 4E, the display of the wiring structure including the TFT 30 in the element substrate 10 is omitted.

  As shown in FIG. 4A, a second interlayer insulating film 12 as an interlayer insulating film of the present invention is formed on the element substrate 10 so as to cover the drain electrode 32 (TFT 30) (interlayer insulating film forming step). As a method of forming the second interlayer insulating film 12, BSG (Boron Silicate Grass) is formed with a film thickness of 3000 nm to 5000 nm by, for example, normal pressure or low pressure CVD using TEB (Triethyl Borate) gas or the like. Next, planarization is performed by CMP, and polishing is performed so that the film thickness becomes 700 nm to 1000 nm, thereby forming the second interlayer insulating film 12 having a flat surface. The second interlayer insulating film 12 is not limited to being formed of a single material layer. For example, NSG (None-doped) formed by atmospheric pressure or low pressure CVD using TEOS (Tetra Ethyl Ortho Silicate). It may be a multilayer structure combined with Silicate Glass.

Next, as shown in FIG. 4B, a contact hole CNT2 penetrating the second interlayer insulating film 12 is formed at a position overlapping the drain electrode 32 in a plan view (contact hole forming step). As a method for forming the contact hole CNT2, for example, a method of dry etching the second interlayer insulating film 12 using a fluorine-based processing gas such as CF ₄ or C ₂ F ₆ so that the surface of the drain electrode 32 is exposed. Can be mentioned. In consideration of later covering the bottom and inner walls of the contact hole CNT2 with a conductive translucent layer, it is desirable to form the contact hole CNT2 so that the cross section of the opening is tapered. Further, the aspect ratio (depth / opening diameter) between the depth of the opening penetrating the second interlayer insulating film 12 (corresponding to the film thickness of the second interlayer insulating film 12) and the opening diameter is approximately 0.8 or more. It is desirable to form the contact hole CNT2 so as to be ˜1.2 or less (1.0 ± 0.2). If the depth is too large (too deep) with respect to the opening diameter, the first translucent layer 15a will not easily reach the bottom of the opening, and if the depth is too small (too shallow) with respect to the opening diameter, it will be described later. In the method of forming the second light transmissive layer 15b, it is difficult to electrically connect the first light transmissive layer 15a and the third light transmissive layer 15c in the contact hole CNT2.

  Next, as shown in FIG. 4C, the surface of the second interlayer insulating film 12 is covered so as to cover the contact hole CNT2, and an ITO film (first translucent film) is formed by, for example, vacuum deposition or sputtering. Is deposited. An ITO film is formed so that the film thickness is approximately 20 nm to 30 nm. The formed ITO film is patterned to form the first light transmissive layer 15a (first light transmissive layer forming step).

  Next, as shown in FIG. 4 (d), for example, silicon oxide is obliquely vapor-deposited or obliquely sputtered with respect to the normal direction of the element substrate 10 on which the first light-transmissive layer 15a is formed. Layer 15b is formed (second translucent layer forming step). The second light transmissive layer 15b is formed so that the film thickness is approximately 50 nm. By depositing silicon oxide from an oblique direction with respect to the normal direction, a portion shadowed by oblique vapor deposition or oblique sputtering in the contact hole CNT2 opened in the normal direction (on the side surface of the contact hole CNT2). The second light-transmitting layer (second light-transmitting film) 15b is not formed on the part. The insulating second light transmissive layer 15b is formed across the plurality of pixels P so as to fill in the space between the adjacent first light transmissive layers 15a. If formed in this way, the step between the pixels P becomes smaller than when the second light-transmissive layer 15b is formed by patterning for each pixel P. Therefore, the alignment unevenness of the liquid crystal molecules due to the step between the pixels P can be reduced.

Next, as shown in FIG. 4E, the surface of the second light transmissive layer 15b is covered so as to cover the contact hole CNT2 again, and an ITO film (third light transmissive property) is formed by, for example, vacuum evaporation or sputtering. Film). An ITO film is formed so that the film thickness is approximately 20 nm to 30 nm. The formed ITO film is patterned to form the third light transmissive layer 15c (third light transmissive layer forming step). Then, in the portion where the insulating second light transmissive layer 15b is not formed in the contact hole CNT2 (part of the side surface of the contact hole CNT2), the conductive first light transmissive layer 15a and the third light transmissive layer 15b. The conductive layer 15 c is in contact with and electrically connected to the drain layer 32 of the TFT 30.
The drain electrode 32 shown in FIGS. 4A to 4E is a relay electrode connected to the second source / drain region in the semiconductor layer 30a of the TFT 30, but the second source / drain. The area itself may be used.

  Further, as shown in FIG. 5A, the contact hole CNT2 is formed at, for example, a corner as the corner of the pixel electrode layer 15, and serves as a light-shielding portion arranged so as to overlap the contact hole CNT2 in plan view. Light is shielded by the scanning line 3a. In the above-described second translucent layer forming step, as shown in FIG. 5A, the length up to the outer periphery of the first translucent layer 15a (pixel electrode layer 15) with the contact hole CNT2 as a reference is longer. A silicon oxide film is formed by oblique vapor deposition or oblique sputtering toward the corner from the direction indicated by → in the figure. In this way, the shadowed portion in the oblique deposition or oblique sputtering in the contact hole CNT2, that is, the portion where the second translucent layer 15b is not formed is the position indicated by →. Therefore, even if the outer position of the first light-transmitting layer 15a and the third light-transmitting layer 15c is slightly shifted in the X direction or the Y direction in the patterning, the first light-transmitting layer 15a and the third light-transmitting layer 15 The translucent layer 15c can be reliably contacted and electrically connected.

  Further, the corner where the contact hole CNT2 is formed is not limited to the corner shown in FIG. 5A. For example, as shown in FIG. 5B, an X extending from the scanning line 3a as the light shielding portion extends. The vicinity of the center of the side portion of the pixel electrode layer 15 along the direction may be used. Also in this case, the first translucent layer 15a with the contact hole CNT2 as a reference is subjected to oblique deposition or oblique sputtering from the longer side (the direction indicated by → in the figure) toward the side portion. It is preferable to form the two translucent layer 15b.

According to the first embodiment, the following effects can be obtained.
(1) In the liquid crystal device 100, the first light-transmitting layer 15 a and the third light-transmitting layer 15 c having conductivity of the pixel electrode layer 15 incorporating the light reflection preventing structure are switching elements of the pixel electrode layer 15. The TFT 30 is electrically connected in the contact hole CNT2 of the TFT 30. Therefore, in order to electrically connect the first light transmissive layer 15a and the third light transmissive layer 15c, for example, a contact hole may not be formed separately. Therefore, it is possible to provide the liquid crystal device 100 in which the pixel electrode layer 15 capable of realizing a high light transmittance in the pixel P is switching-controlled by the TFT 30. In other words, the liquid crystal device 100 capable of bright display can be provided with a simple configuration.
(2) In the liquid crystal device 100 and the manufacturing method thereof, the insulating second light transmissive layer 15b constituting the light reflection preventing structure is formed by oblique deposition or oblique sputtering of an inorganic insulating material such as silicon oxide. . Therefore, a shadowed portion is formed on a part of the side surface of the opening of the contact hole CNT2 during oblique deposition or oblique sputtering, and the second light-transmissive layer 15b is not formed in the shaded portion. In CNT2, the 1st translucent layer 15a and the 3rd translucent layer 15c can be made to contact reliably, and can be electrically connected. In other words, in order to electrically connect the first light-transmitting layer 15a and the third light-transmitting layer 15c, for example, a contact hole does not need to be formed separately, so that productivity is not reduced. A liquid crystal device 100 capable of bright display can be manufactured.
(3) In the transmissive liquid crystal device 100 and the manufacturing method thereof, in addition to the pixel electrode layer 15 on the element substrate 10 side, the common electrode layer 23 incorporating the light reflection preventing structure is also formed on the counter substrate 20 side. Yes. Accordingly, it is possible to provide or manufacture the liquid crystal device 100 that can display brighter.
(4) The contact hole CNT2 in which the conductive first light-transmitting layer 15a and the third light-transmitting layer 15c in the light reflection preventing structure are electrically connected is connected to the scanning line 3a as a light-shielding portion in plan view. It is formed at the overlapping position. Therefore, even if irregularities occur in the portion of the alignment film 18 covering the contact hole CNT2 and the alignment of the liquid crystal molecules is disturbed, the display unevenness due to the disorder of the alignment is shielded from light and becomes inconspicuous.
For example, when a contact hole for electrically connecting the first light transmitting layer 15a and the third light transmitting layer 15c other than the contact hole CNT2 is formed separately, the contact hole overlaps with the contact hole in a plane. It is necessary to dispose the light shielding part, and there arises a problem that the area of the light shielding part in the pixel P increases and the aperture ratio decreases. According to the present embodiment, such a problem can be solved.

(Second Embodiment)
Next, a manufacturing method of the liquid crystal device of the second embodiment will be described with reference to FIG. 6A to 6D are schematic cross-sectional views illustrating a method for manufacturing the liquid crystal device of the second embodiment. In the second embodiment, the method of forming the second light transmissive layer 15b is different from the method of manufacturing the liquid crystal device 100 of the first embodiment. Therefore, the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

In the method of manufacturing the liquid crystal device according to the second embodiment, first, as shown in FIG. 6A, the surface of the second interlayer insulating film 12 is covered so as to cover the contact hole CNT2, and a first transparent film made of an ITO film is formed. The light layer 15a is formed. The formation method of the 1st translucent layer 15a is the same as 1st Embodiment mentioned above.
Next, as shown in FIG. 6B, the second light-transmitting layer 15b is formed of silicon oxide, for example, by vacuum deposition or sputtering so as to cover the first light-transmitting layer 15a. At this time, since the film is formed from the normal direction of the element substrate 10, the insulating second translucent layer 15b is formed up to the inside of the contact hole CNT2.
Next, as shown in FIG. 6C, a photosensitive resist 60 is formed so as to cover the second light transmissive layer 15b, and exposure and development are performed so that a portion corresponding to the contact hole CNT2 is opened. A portion 60a is formed. Subsequently, the second light-transmitting layer 15b in the contact hole CNT2 is removed by wet etching using an alkaline solution or a solution containing HF (hydrofluoric acid) or by dry etching using a fluorine-based processing gas. (Second translucent film removing step). Then, the photosensitive resist 60 is peeled off.
Next, as shown in FIG. 6D, a third light transmissive layer 15c made of an ITO film is formed so as to cover the surface of the second light transmissive layer 15b so as to cover the contact hole CNT2 again. The method for forming the third light transmissive layer 15c is the same as in the first embodiment.

  According to the method of manufacturing the liquid crystal device of the second embodiment, the third light transmissive so as to cover the contact hole CNT2 after removing the insulating second light transmissive layer 15b formed in the contact hole CNT2. Since the conductive layer 15c is formed, the first light-transmitting layer 15a and the third light-transmitting layer 15c can be reliably contacted and electrically connected in the contact hole CNT2.

(Third embodiment)
<Electronic equipment>
Next, a projection display device as an electronic apparatus according to the present embodiment will be described with reference to FIG. FIG. 7 is a schematic diagram illustrating a configuration of a projection display device as an electronic apparatus. As shown in FIG. 7, a projection display apparatus 1000 as an electronic apparatus according to the present embodiment includes a polarization illumination apparatus 1100 arranged along the system optical axis L, and two dichroic mirrors 1104 and 1105 as light separation elements. Three reflection mirrors 1106, 1107, 1108, five relay lenses 1201, 1202, 1203, 1204, 1205, three transmissive liquid crystal light valves 1210, 1220, 1230 as light modulation means, and a light combining element As a cross dichroic prism 1206 and a projection lens 1207.

  The polarized light illumination device 1100 is generally configured by a lamp unit 1101 as a light source composed of a white light source such as an ultra-high pressure mercury lamp or a halogen lamp, an integrator lens 1102, and a polarization conversion element 1103.

  The dichroic mirror 1104 reflects red light (R) and transmits green light (G) and blue light (B) among the polarized light beams emitted from the polarization illumination device 1100. Another dichroic mirror 1105 reflects the green light (G) transmitted through the dichroic mirror 1104 and transmits the blue light (B).

The red light (R) reflected by the dichroic mirror 1104 is reflected by the reflection mirror 1106 and then enters the liquid crystal light valve 1210 via the relay lens 1205.
Green light (G) reflected by the dichroic mirror 1105 enters the liquid crystal light valve 1220 via the relay lens 1204.
The blue light (B) transmitted through the dichroic mirror 1105 enters the liquid crystal light valve 1230 via a light guide system including three relay lenses 1201, 1202, 1203 and two reflection mirrors 1107, 1108.

  The liquid crystal light valves 1210, 1220, and 1230 are disposed to face the incident surfaces of the cross dichroic prism 1206 for each color light. The color light incident on the liquid crystal light valves 1210, 1220, and 1230 is modulated based on video information (video signal) and emitted toward the cross dichroic prism 1206. In this prism, four right-angle prisms are bonded together, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in a cross shape on the inner surface thereof. The three color lights are synthesized by these dielectric multilayer films, and the light representing the color image is synthesized. The synthesized light is projected on the screen 1300 by the projection lens 1207 which is a projection optical system, and the image is enlarged and displayed.

  The liquid crystal light valve 1210 is the one to which the liquid crystal device 100 of the first embodiment described above is applied. The liquid crystal device 100 is arranged with a gap between a pair of polarizing elements arranged in crossed Nicols on the incident side and the emission side of colored light. The same applies to the other liquid crystal light valves 1220 and 1230.

  According to such a projection display device 1000, the liquid crystal device 100 that can obtain high transmittances for red, green, and blue color light in the opening region of the pixel P is used as the liquid crystal light valves 1210, 1220, and 1230. Therefore, bright display quality is realized by effectively using the light emitted from the polarization illumination device 1100.

  In addition, the fact that a high transmittance can be obtained in the opening area of the pixel P means that the reflectance of light transmitted through the opening area is lowered. As a result, the probability that the reflected light is transmitted again through the liquid crystal layer 50 is reduced. (Light degradation) is improved.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the spirit or concept of the invention that can be read from the claims and the entire specification. A method for manufacturing a liquid crystal device and an electronic apparatus to which the liquid crystal device is applied are also included in the technical scope of the present invention. Various modifications other than the above embodiment are conceivable. Hereinafter, a modification will be described.

  (Modification 1) In the liquid crystal device 100 of the above embodiment, the antireflection structure is incorporated in the pixel electrode layer 15 on the element substrate 10 side and the common electrode layer 23 on the counter substrate 20 side, but only in the pixel electrode layer 15. A structure incorporating an antireflection structure may be used. A transmissive liquid crystal device capable of bright display with a simpler configuration can be provided.

(Modification 2) The configuration having the pixel electrode layer 15 incorporating the light reflection preventing structure is not limited to the transmissive liquid crystal device 100. FIG. 8 is a schematic cross-sectional view illustrating a pixel structure of a liquid crystal device according to a modification. In addition, the same code | symbol is attached | subjected to the same structure as the liquid crystal device 100 of the said embodiment, and detailed description shall be abbreviate | omitted.
As illustrated in FIG. 8, the liquid crystal device 150 according to the second modification includes a reflective layer 13 between the pixel electrode layer 15 in which the light reflection preventing structure is incorporated in the element substrate 10 and the element substrate 10. The reflective layer 13 is made of, for example, Al (aluminum), Ag (silver), or an alloy of these metals having light reflectivity, and is insulated from the first translucent layer 15 a in the second interlayer insulating film 12. Is formed. The conductive first light transmissive layer 15a and the third light transmissive layer 15c are electrically connected in the contact hole CNT2 of the TFT 30.
The light L3 incident from the counter substrate 20 side is transmitted through the common electrode layer 23 incorporating the antireflection structure, the liquid crystal layer 50, and the pixel electrode layer 15 incorporating the antireflection structure, and reflected by the reflection layer 13. To do. Then, the light passes through the incident path in the opposite direction and is emitted from the counter substrate 20 side. The refractive indexes and film thicknesses of the respective light-transmitting layers are set so that the reflected lights L4 and L5 reflected at the interfaces of the light-transmitting layers having different refractive indexes are reduced in intensity. In this case, the thickness d of the liquid crystal layer 50 is set to be smaller than the thickness of the liquid crystal layer 50 in the liquid crystal device 100 of the above embodiment because incident light is transmitted through the liquid crystal layer 50 at least twice. .
According to such a liquid crystal device 150, it is possible to provide a reflective liquid crystal device 150 in which the intensity of the reflected light L4 and L5 is small, the interference with the incident light L3 is reduced, and a bright display is possible. it can.

  (Modification 3) The planar shape of the contact hole CNT2 that electrically connects the first light transmitting layer 15a and the third light transmitting layer 15c in the pixel electrode layer 15 is not limited to a circle. For example, the aspect ratio of the contact hole CNT <b> 2 in that case may be defined as the depth of the opening / the minimum diameter of the opening. The insulating second translucent layer 15b is preferably formed by oblique deposition or oblique sputtering of an inorganic insulating material from the direction along the minimum diameter of the contact hole CNT2.

  (Modification 4) An electronic apparatus to which the liquid crystal device 100 of the above embodiment can be applied is not limited to the projection display device 1000 of the above embodiment. For example, projection-type HUD (head-up display), direct-view type HMD (head-mounted display), electronic book, personal computer, digital still camera, LCD TV, viewfinder type or monitor direct-view type video recorder, car navigation system It can be suitably used as a display unit of an information terminal device such as an electronic notebook or POS.

  DESCRIPTION OF SYMBOLS 10 ... Element substrate as a 1st board | substrate, 12 ... 2nd interlayer insulation film as an interlayer insulation film, 15 ... Pixel electrode layer, 15a ... 1st translucent layer, 15b ... 2nd translucent layer, 15c ... 1st 3 translucent layers, 20 ... counter substrate as a second substrate, 23 ... common electrode layer, 23a ... fourth translucent layer, 23b ... fifth translucent layer, 23c ... sixth translucent layer, 30 DESCRIPTION OF SYMBOLS: Thin-film transistor (TFT), 50 ... Liquid crystal layer, 100, 150 ... Liquid crystal device, 1000 ... Projection type display apparatus as an electronic device, CNT2 ... Contact hole, E ... Pixel region, P ... Pixel.

Claims (9)

A first substrate;
A second substrate disposed to face the first substrate;
A liquid crystal layer sandwiched between the first substrate and the second substrate;
A pixel electrode layer provided between the first substrate and the liquid crystal layer;
A transistor provided between the first substrate and the pixel electrode layer and corresponding to the pixel electrode layer;
An interlayer insulating film provided between the transistor and the pixel electrode layer and having a contact hole formed thereon;
The pixel electrode layer includes a conductive first light-transmitting layer formed in order from the interlayer insulating film side, and an insulating second light-transmitting layer having a refractive index smaller than that of the first light-transmitting layer. And a third light-transmitting layer that has a higher refractive index than the second light-transmitting layer and is conductive,
The liquid crystal device, wherein the first light transmissive layer and the third light transmissive layer are electrically connected in the contact hole.   The liquid crystal device according to claim 1, wherein the second translucent layer is not formed in the contact hole.   A conductive fourth light-transmitting layer formed between the second substrate and the liquid crystal layer; and the fourth light-transmitting layer provided between the fourth light-transmitting layer and the liquid crystal layer. An insulating fifth light-transmitting layer having a refractive index smaller than that of the layer, and a conductive material having a refractive index larger than that of the fifth light-transmitting layer, provided between the fifth light-transmitting layer and the liquid crystal layer. 3. The liquid crystal device according to claim 1, further comprising a common electrode layer including a conductive sixth light-transmitting layer. The contact hole is formed at a corner of the pixel electrode layer,
4. The liquid crystal device according to claim 1, further comprising: a light shielding portion that overlaps the contact hole in a plan view on at least one of the first substrate and the second substrate. 5. A method of manufacturing a liquid crystal device having a liquid crystal layer sandwiched between a first substrate and a second substrate,
Forming an interlayer insulating film covering the transistor formed on the first substrate;
Forming a contact hole penetrating the interlayer insulating film;
Forming a conductive first light-transmitting film on the interlayer insulating film so as to cover the contact hole and be electrically connected to the transistor;
A vapor deposition method is used to deposit an inorganic insulating material from an oblique direction with respect to the normal direction of the substrate on which the contact hole is formed, and the first insulating film is formed in a region excluding a part of the side surface of the contact hole. Forming a second translucent film having a refractive index smaller than that of the translucent film on the first translucent film;
Forming a conductive third translucent film on the second translucent film covering the contact hole and having a refractive index larger than that of the second translucent film;
And a step of patterning at least the first light-transmitting film and the third light-transmitting film to form a pixel electrode layer. The contact hole is formed at a corner of the pixel electrode layer,
The step of forming the second light-transmitting film includes forming an inorganic insulating material from the oblique direction toward the corner from the longest length to the outer periphery of the pixel electrode layer with respect to the contact hole, The method of manufacturing a liquid crystal device according to claim 5, wherein the second light transmissive film is formed. A method of manufacturing a liquid crystal device having a liquid crystal layer sandwiched between a first substrate and a second substrate,
Forming an interlayer insulating film covering the transistor formed on the first substrate;
Forming a contact hole penetrating the interlayer insulating film;
Forming a conductive first light-transmitting film on the interlayer insulating film so as to cover the contact hole and be electrically connected to the transistor;
Forming an insulating second translucent film having a refractive index smaller than that of the first translucent film on the first translucent film;
Removing a portion of the second translucent film covering the contact hole;
Forming a conductive third translucent film on the second translucent film covering the contact hole and having a refractive index larger than that of the second translucent film;
And a step of patterning at least the first light-transmitting film and the third light-transmitting film to form a pixel electrode layer. Forming a conductive fourth translucent layer on the side of the second substrate facing the liquid crystal layer;
Forming an insulating fifth light-transmitting layer having a refractive index smaller than that of the fourth light-transmitting layer on the fourth light-transmitting layer;
Forming a conductive sixth light-transmitting layer having a refractive index higher than that of the fifth light-transmitting layer on the fifth light-transmitting layer; 8. A method for manufacturing a liquid crystal device according to claim 7.   An electronic apparatus comprising the liquid crystal device according to any one of claims 1 to 4.

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