JP2013092613A - Liquid crystal display device, and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture a liquid crystal display device without increasing a photolithography step.SOLUTION: The liquid crystal display device comprises: a first insulating layer 30 provided on the end of a first transparent electrode 14; a gate electrode 18 under the first insulating layer 30; a semiconductor layer 34 on the first insulating layer 30; a first wire 46 which is formed so as to reach the first transparent electrode 14 from above the semiconductor layer 34 and is electrically connected to the first transparent electrode 14; a second wire 48 drawn from above the semiconductor layer 34 so as to be spaced from the first wire 46; a second insulating layer 54 covering the first wire 46, the second wire 48, the semiconductor layer 34 and the first transparent electrode 14; a second transparent electrode 60 formed on the second insulating layer 54; and a liquid crystal layer 66 arranged on the second transparent electrode 60. An electric field is applied in a plane direction of a substrate 10 by a voltage applied between the first transparent electrode 14 and the second transparent electrode 60, and liquid crystal molecules of the liquid crystal layer 66 are rotated in a plane parallel to the substrate 10.

Description

  The present invention relates to a liquid crystal display device and a manufacturing method thereof.

  A horizontal electric field type liquid crystal display panel is provided with a pair of electrodes insulated from each other on one inner surface side of a pair of substrates disposed with a liquid crystal layer interposed therebetween, and a substantially horizontal electric field is applied to liquid crystal molecules. To be applied. A thin film transistor is used for driving the liquid crystal.

JP 2007-133410 A

  Patent Document 1 discloses a method for manufacturing a thin film transistor. According to this, a thin film transistor can be manufactured by five photolithography steps. However, since the insulating layer between a pair of electric fields becomes two layers, the thin film transistor becomes thick and the driving voltage of the liquid crystal must be increased. In order to make one insulating layer, it is necessary to increase the number of photolithography processes. Alternatively, there has been a desire to avoid increasing the number of photolithography processes regardless of the reason.

  An object of the present invention is to manufacture a liquid crystal display device without increasing the photolithography process.

  (1) A liquid crystal display device according to the present invention includes a substrate, a first transparent electrode formed on the substrate, and a first insulating layer formed on the substrate so as to be placed on an end portion of the first transparent electrode. A gate electrode disposed below the first insulating layer; a semiconductor layer formed on the first insulating layer; and a layer extending from the semiconductor layer to the first transparent electrode. A first wiring electrically connected to the first transparent electrode; a second wiring led out from the semiconductor layer at a distance from the first wiring; the first wiring; the second wiring; and the semiconductor layer And a second insulating layer covering the first transparent electrode, a second transparent electrode formed on the second insulating layer, and a liquid crystal layer disposed on the second transparent electrode, An electric field is generated in the surface direction of the substrate by a voltage applied between the first transparent electrode and the second transparent electrode. In addition, it is characterized by rotating the liquid crystal molecules of the liquid crystal layer in the plane parallel to the substrate. According to the present invention, since the first wiring is electrically connected on the first transparent electrode, it is not necessary to form a through hole in the second insulating layer. Therefore, a liquid crystal display device that can keep the resistance value low by electrical connection without using a through hole can be manufactured without increasing the number of photolithography steps.

  (2) In the liquid crystal display device described in (1), the end portion of the first insulating layer is formed on the end portion of the first transparent electrode so as to be thinner toward the tip end. The first wiring may be formed on the inclined surface having an inclined surface inclined at an acute inclination angle.

  (3) A method for manufacturing a liquid crystal display device according to the present invention includes etching using a first etching resist formed by first photolithography, and includes a first transparent conductive film and a first transparent conductive film formed on a substrate. Forming a first transparent electrode and a gate electrode from a first metal film formed on the film, and etching using a second etching resist formed by second photolithography, wherein Forming a first insulating layer on the substrate and having a semiconductor layer thereon and etching using a third etching resist formed by a third photolithography, wherein the first insulating layer is formed from above the semiconductor layer. A first wiring disposed on one transparent electrode and electrically connected to the first transparent electrode, and spaced from the first wiring; A step of forming a second wiring drawn from above the semiconductor layer, and an etching using a fourth etching resist formed by a fourth photolithography, wherein the first wiring, the second wiring, the semiconductor layer, and Forming a second transparent electrode on the second insulating layer, comprising: forming a second insulating layer covering the first transparent electrode; and etching using a fifth etching resist formed by fifth photolithography. And a liquid crystal layer including liquid crystal molecules that rotate in a plane parallel to the substrate by applying an electric field generated in a plane direction of the substrate by a voltage applied between the first transparent electrode and the second transparent electrode. And placing on the second transparent electrode. According to the present invention, since the second insulating layer consisting of one layer can be formed between the first transparent electrode and the second transparent electrode by photolithography, the liquid crystal display can be performed with a small number of photolithography steps. The device can be manufactured.

  (4) In the method of manufacturing a liquid crystal display device according to (3), in the step of forming the first transparent electrode and the gate electrode, the first etching resist includes a first thick part and a first thick part having different thicknesses. Including the first thin portion, the first thick portion is disposed in the formation region of the gate electrode, the first thin portion is disposed in the formation region of the first transparent electrode, and the first thick portion and the first The first metal film is etched using one thin portion as a mask to form the gate electrode under the first thick portion, and the formation region of the first transparent electrode under the first thin portion By leaving the first metal film in a shape corresponding to the above, and by thinning the first thick part and the first thin part, the first thick part remains, and the first thin part is removed, Exposing the first metal film in the formation region of the first transparent electrode; The first transparent electrode is formed under the exposed first metal film by etching the first transparent conductive film using the first metal film and the first thick portion as a mask, and the first thickness Using the meat portion as a mask, the exposed first metal film may be removed by etching, and the first etching resist may be peeled off.

  (5) In the method of manufacturing a liquid crystal display device according to (4), in the step of forming the first insulating layer, the semiconductor layer is formed of a semiconductor material film, and the first insulating layer is a first insulating layer. The second etching resist includes a second thick part and a second thin part having different thicknesses, the semiconductor material film is formed on the first insulating material film, and the second etching resist is formed of an insulating material film. A thick portion is disposed above the first insulating material film and on the semiconductor material film in a formation region of the semiconductor layer, and the second thin portion is disposed above the first insulating material film. The semiconductor material film and the first insulating material film are continuously disposed on the semiconductor material film in a region where the first insulating layer is formed, using the second thick part and the second thin part as a mask. Etching to form the first insulating layer, the second thick part and the second By the process of thinning the thick part, the second thick part is left, the second thin part is removed, the semiconductor material film is exposed outside the formation region of the semiconductor layer, and the second thick part The mask may be used as a mask to etch the semiconductor material film and peel off the second etching resist.

  (6) In the method for manufacturing a liquid crystal display device according to (5), the end portion of the first insulating layer has an acute angle on the end portion of the first transparent electrode, with the thickness decreasing toward the tip end. The first insulating material film may be etched so as to have an inclined surface inclined at an inclination angle of.

  (7) In the method of manufacturing a liquid crystal display device according to (5) or (6), in the step of forming the first wiring and the second wiring, the first wiring and the second wiring are the semiconductor The third etching resist is disposed in a formation region of the first wiring and the second wiring, and the second metal film is etched using the third etching resist mask as a third etching resist mask. The first wiring and the second wiring may be formed, and the third etching resist may be peeled off.

  (8) In the method of manufacturing a liquid crystal display device described in (7), the semiconductor layer is formed so as to include a lower layer and an upper layer in which the amount of impurities added is higher than that of the lower layer, and the second metal film is etched. Then, the upper layer may be etched so as to leave the lower layer of the semiconductor layer as the third etching resist mask.

  (9) In the method of manufacturing a liquid crystal display device according to (7) or (8), in the step of forming the second insulating layer, the second insulating layer is formed of a second insulating material film, The fourth etching resist is disposed in the formation region of the second insulating layer, and the second insulating material film is etched to form the second insulating layer as the fourth etching resist mask, and the fourth etching resist is formed. It is good also as peeling.

  (10) In the method of manufacturing a liquid crystal display device according to (9), in the step of forming the second transparent electrode, the second transparent electrode is formed from a second transparent conductive film, and the fifth etching resist is formed. Forming the second transparent electrode by etching the second transparent conductive film as the fifth etching resist mask, and removing the fifth etching resist. May be a feature.

It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 to 26 are diagrams for explaining a method of manufacturing a liquid crystal display device according to an embodiment of the present invention.

  As shown in FIG. 1, a first transparent conductive film 12 is formed on a substrate 10. In addition, illustration of the board | substrate 10 is abbreviate | omitted in FIGS. The substrate 10 is made of a light transmissive material such as glass. The first transparent conductive film 12 is made of, for example, ITO (Indium Tin Oxide). In the present embodiment, a horizontal electric field type or IPS (In Plane Switching) type liquid crystal display device in which an electric field is applied in the plane direction of the substrate 10 to rotate liquid crystal molecules in a plane parallel to the substrate 10 is manufactured. As will be described later, the first transparent conductive film 12 is for forming the first transparent electrode 14 (see FIG. 26). The first transparent electrode 14 is one electrode for generating an electric field. In the present embodiment, the first transparent electrode 14 is a pixel electrode provided for each pixel.

  Then, the first metal film 16 is formed on the first transparent conductive film 12. The first metal film 16 is made of, for example, aluminum. The first metal film 16 is for forming the gate electrode 18 as described later (see FIG. 26). The gate electrode 18 is a constituent element of the thin film transistor 20.

  As shown in FIG. 2, a first etching resist 22 is formed by first photolithography. In photolithography, the surface of a material coated with a photosensitive material is exposed in a pattern (also called pattern exposure, imagewise exposure, etc.) to generate a pattern consisting of an exposed portion and an unexposed portion. Technology.

  The first etching resist 22 is formed so as to include a first thick portion 24 and a first thin portion 26 having different thicknesses. Therefore, the first photolithography includes halftone exposure. The first thick part 24 is disposed in the formation region of the gate electrode 18. The first thin portion 26 is disposed in the region where the first transparent electrode 14 is formed.

  As shown in FIG. 3, the first metal film 16 is etched using the first thick portion 24 and the first thin portion 26 as a mask. Although this etching is wet etching, a chemical solution that does not etch the first transparent conductive film 12 is used. The gate electrode 18 is formed under the first thick portion 24 by etching, and the first metal film 16 is left under the first thin portion 26 in a shape corresponding to the region where the first transparent electrode 14 is formed.

  As shown in FIG. 4, the process which makes the 1st thick part 24 and the 1st thin part 26 thin is performed. This process is ashing. As a result, the first thin portion 26 is removed, and the first metal film 16 is exposed in the formation region of the first transparent electrode 14. However, the first thick part 24 remains.

  As shown in FIG. 5, the first transparent conductive film 12 is etched using the first metal film 16 exposed from the first etching resist 22 and the first thick portion 24 as a mask. Although this etching is wet etching, a chemical solution that does not etch the first metal film 16 is used. The first transparent electrode 14 is formed under the first metal film 16 exposed from the first etching resist 22 by etching.

  As shown in FIG. 6, the exposed first metal film 16 is removed by etching using the first thick portion 24 as a mask. Although this etching is wet etching, a chemical solution that does not etch the first transparent conductive film 12 is used.

  As shown in FIG. 7, the first etching resist 22 is stripped. A chemical is used for peeling. When the first etching resist 22 is removed, the gate electrode 18 is exposed.

  As shown in FIG. 8, the first insulating material film 28 is formed on the substrate 10 (see FIG. 1, omitted in FIG. 8). The first insulating material film 28 is formed of SiN by plasma CVD (Plasma-Enhanced Chemical Vapor Deposition), for example. The first insulating material film 28 is for forming a first insulating layer 30 described later (see FIG. 26). The first insulating material film 28 is formed so as to cover the first transparent electrode 14 and the gate electrode 18.

  A semiconductor material film 32 such as amorphous silicon is formed on the first insulating material film 28. As will be described later, the semiconductor material film 32 is for forming a semiconductor layer 34 which is a constituent element of the thin film transistor 20 (see FIG. 26). The semiconductor layer 34 is formed so as to include a lower layer 36 and an upper layer 38 having a larger amount of impurities added than the lower layer 36.

  As shown in FIG. 9, a second etching resist 40 is formed by second photolithography. The second etching resist 40 is formed so as to include a second thick part 42 and a second thin part 44 having different thicknesses. Therefore, the second photolithography includes halftone exposure. The second thick portion 42 is disposed in the formation region of the semiconductor layer 34 above the first insulating material film 28 and on the semiconductor material film 32. The second thin portion 44 is disposed above the first insulating material film 28 and on the semiconductor material film 32 in the formation region of the first insulating layer 30.

  As shown in FIG. 10, the first insulating layer 30 is formed by continuously etching the semiconductor material film 32 and the first insulating material film 28 using the second thick part 42 and the second thin part 44 as a mask. This etching is dry etching. The first insulating layer 30 is formed so as to be placed on the end portion of the first transparent electrode 14. In addition, the end portion of the first insulating layer 30 has an inclined surface that is thin on the end portion of the first transparent electrode 14 and has an acute angle (for example, about 10 °). Then, the first insulating material film 28 is etched. Etching conditions are adjusted so as to obtain such a shape.

  As shown in FIG. 11, the process which makes the 2nd thick part 42 and the 2nd thin part 44 thin is performed. This process is ashing. Thereby, the 2nd thin part 44 is removed. Then, the semiconductor material film 32 is exposed from the second etching resist 40 outside the region where the semiconductor layer 34 is formed. The second thick part 42 remains.

  As shown in FIG. 12, the semiconductor layer 34 is formed by etching the semiconductor material film 32 using the second thick portion 42 as a mask.

  As shown in FIG. 13, the second etching resist 40 is stripped. A chemical is used for peeling. When the second etching resist 40 is removed, the semiconductor layer 34 is exposed.

  As shown in FIG. 14, a second metal film 50 for forming the first wiring 46 and the second wiring 48 is formed so as to cover the semiconductor layer 34. The first wiring 46 and the second wiring 48 are a drain wiring and a source wiring of the thin film transistor 20 (see FIG. 26).

  As shown in FIG. 15, a third etching resist 52 is formed by third photolithography. The third etching resist 52 is disposed in a region where the first wiring 46 and the second wiring 48 are formed.

  As shown in FIG. 16, the 2nd metal film 50 is etched as a 3rd etching resist 52 mask, and the 1st wiring 46 and the 2nd wiring 48 are formed. This etching is wet etching. The first wiring 46 is formed from the semiconductor layer 34 to the first transparent electrode 14 and is electrically connected to the first transparent electrode 14. The second wiring 48 is drawn from the semiconductor layer 34 with a space from the first wiring 46.

  As shown in FIG. 17, after etching the second metal film 50, the upper layer 38 is etched so that the lower layer 36 of the semiconductor layer 34 is left as a third etching resist 52 mask. That is, the upper layer 38 having a large amount of impurities added is separated into a drain region and a source region.

  As shown in FIG. 18, the third etching resist 52 is stripped. A chemical is used for peeling. When the third etching resist 52 is removed, the first wiring 46 and the second wiring 48 are exposed.

  As shown in FIG. 19, a second insulating material film 56 for forming the second insulating layer 54 is formed so as to cover the first wiring 46, the second wiring 48, the semiconductor layer 34, and the first transparent electrode 14. . The second insulating material film 56 is formed of SiN by, for example, plasma CVD (Plasma-Enhanced Chemical Vapor Deposition).

  As shown in FIG. 20, a fourth etching resist 58 is formed by fourth photolithography. The fourth etching resist 58 is disposed in the formation region of the second insulating layer 54 (see FIG. 21). In the second insulating layer 54, through holes and notches (not shown) for electrical connection with various wirings thereunder are formed, so that the formation regions of these through holes and notches are exposed. A fourth etching resist 58 is formed. Then, the second insulating material film 56 is etched using the fourth etching resist 58 mask to form the second insulating layer 54 (see FIG. 21). This etching is dry etching.

  As shown in FIG. 21, the fourth etching resist 58 is stripped. A chemical is used for peeling. When the fourth etching resist 58 is removed, the second insulating layer 54 is exposed.

  As shown in FIG. 22, a second transparent conductive film 62 for forming the second transparent electrode 60 is formed on the second insulating layer 54. The second transparent conductive film 60 is made of, for example, ITO (Indium Tin Oxide). The second transparent electrode 60 is the other electrode for generating an electric field by a lateral electric field method or an IPS (In Plane Switching) method. In the present embodiment, the second transparent electrode 60 is a common electrode facing all the pixel electrodes (see FIG. 26).

  As shown in FIG. 23, a fifth etching resist 64 is formed by fifth photolithography. The fifth etching resist 64 is disposed in the formation region of the second transparent electrode 60 (see FIG. 24).

  As shown in FIG. 24, the second transparent electrode 60 is formed by etching the second transparent conductive film 62 using the fifth etching resist 64 as a mask.

  As shown in FIG. 25, the 5th etching resist 64 is peeled. A chemical is used for peeling. When the fifth etching resist 64 is removed, the second transparent electrode 60 is exposed.

  As shown in FIG. 26, the liquid crystal layer 66 is disposed on the second transparent electrode 60. Specifically, the TFT substrate 68 on which a circuit including the thin film transistor 20 is formed is obtained by the above-described process, and the liquid crystal layer 66 is sandwiched between the color filter substrate 70 and the TFT substrate 68 prepared separately.

  The color filter substrate 70 includes a substrate 72, a color filter 74, a black matrix 76, a planarization layer 78, and an alignment film 80. In addition, an alignment film 82 is formed on the TFT substrate 68 so as to cover the second transparent electrode 60. A liquid crystal layer 66 is sandwiched between the color filter substrate 70 and the alignment films 80 and 82 of the TFT substrate 68. The liquid crystal molecules in the liquid crystal layer 66 are rotated in a plane parallel to the substrate 10 by applying an electric field generated in the plane direction of the substrate 10 by a voltage applied between the first transparent electrode 14 and the second transparent electrode 60.

  According to the present embodiment, the second insulating layer 54 consisting of one layer can be formed between the first transparent electrode 14 and the second transparent electrode 60 by five times of photolithography. A liquid crystal display device can be manufactured in the process.

  The liquid crystal display device illustrated in FIG. A first transparent electrode 14 is formed on the substrate 10. A first insulating layer 30 is formed on the substrate 10 so as to be placed on the end portion of the first transparent electrode 14. The end portion of the first insulating layer 30 is formed on the end portion of the first transparent electrode 14 so that the thickness decreases toward the tip end. Therefore, the first insulating layer 30 has an inclined surface that is inclined at an acute angle (for example, about 10 °).

  A gate electrode 18 is disposed under the first insulating layer 30. A semiconductor layer 34 is formed on the first insulating layer 30. A first wiring 46 is formed from the semiconductor layer 34 to the first transparent electrode 14. The first wiring 46 that is electrically connected to the first transparent electrode 14 is formed on the inclined surface of the first insulating layer 30.

  A second wiring 48 is drawn from the semiconductor layer 34 with a space from the first wiring 46. A second insulating layer 54 is formed so as to cover the first wiring 46, the second wiring 48, the semiconductor layer 34, and the first transparent electrode 14. A second transparent electrode 60 is formed on the second insulating layer 54.

  A liquid crystal layer 66 is disposed on the second transparent electrode 60. An electric field is applied in the plane direction of the substrate 10 by a voltage applied between the first transparent electrode 14 and the second transparent electrode 60 to rotate the liquid crystal molecules of the liquid crystal layer 66 in a plane parallel to the substrate 10.

  According to the present embodiment, since the first wiring 46 is electrically connected on the first transparent electrode 14, it is not necessary to form a through hole in the second insulating layer 54. Therefore, a liquid crystal display device that can keep the resistance value low by electrical connection without using a through hole can be manufactured without increasing the number of photolithography steps.

  The present invention is not limited to the embodiment described above, and various modifications are possible. For example, the configuration described in the embodiment can be replaced with a substantially the same configuration, a configuration that exhibits the same operational effects, or a configuration that can achieve the same purpose.

  DESCRIPTION OF SYMBOLS 10 Substrate, 12 1st transparent conductive film, 14 1st transparent electrode, 16 1st metal film, 18 Gate electrode, 20 Thin film transistor, 22 1st etching resist, 24 1st thick part, 26 1st thin part, 28 1st 1 insulating material film, 30 first insulating layer, 32 semiconductor material film, 34 semiconductor layer, 36 lower layer, 38 upper layer, 40 second etching resist, 42 second thick part, 44 second thin part, 46 first wiring, 48 Second wiring, 50 Second metal film, 52 Third etching resist, 54 Second insulating layer, 56 Second insulating material film, 58 Fourth etching resist, 60 Second transparent electrode, 62 Second transparent conductive film, 64 5th etching resist, 66 liquid crystal layer, 68 TFT substrate, 70 color filter substrate, 72 substrate, 74 color filter, 76 black matrix, 7 Flattening layer, 80 alignment film 82 oriented film.

Claims (10)

A substrate,
A first transparent electrode formed on the substrate;
A first insulating layer formed on the substrate to be placed on an end of the first transparent electrode;
A gate electrode disposed under the first insulating layer;
A semiconductor layer formed on the first insulating layer;
A first wiring formed so as to extend from the semiconductor layer to the first transparent electrode and electrically connected to the first transparent electrode;
A second wiring drawn from above the semiconductor layer at a distance from the first wiring;
A second insulating layer covering the first wiring, the second wiring, the semiconductor layer, and the first transparent electrode;
A second transparent electrode formed on the second insulating layer;
A liquid crystal layer disposed on the second transparent electrode;
Have
An electric field is applied in a plane direction of the substrate by a voltage applied between the first transparent electrode and the second transparent electrode, and liquid crystal molecules of the liquid crystal layer are rotated in a plane parallel to the substrate. A characteristic liquid crystal display device. The liquid crystal display device according to claim 1,
The end portion of the first insulating layer has an inclined surface that is formed on the end portion of the first transparent electrode so as to become thinner toward the tip and is inclined at an acute inclination angle.
The liquid crystal display device, wherein the first wiring is formed on the inclined surface. The first transparent conductive film formed on the substrate and the first metal film formed on the first transparent conductive film including the etching using the first etching resist formed by the first photolithography, and the first transparent Forming an electrode and a gate electrode;
Forming a first insulating layer on the substrate, which includes etching using a second etching resist formed by second photolithography, and is placed on an end of the first transparent electrode and having a semiconductor layer thereon;
A first etching layer including etching using a third etching resist formed by a third photolithography, disposed from the semiconductor layer to the first transparent electrode, and electrically connected to the first transparent electrode; Forming a second wiring drawn from above the semiconductor layer at a distance from the wiring and the first wiring;
Forming a second insulating layer that covers the first wiring, the second wiring, the semiconductor layer, and the first transparent electrode, including etching using a fourth etching resist formed by fourth photolithography;
Forming a second transparent electrode on the second insulating layer, including etching using a fifth etching resist formed by fifth photolithography;
A liquid crystal layer including liquid crystal molecules rotating in a plane parallel to the substrate is applied by applying an electric field generated in a plane direction of the substrate by a voltage applied between the first transparent electrode and the second transparent electrode. 2 placing on a transparent electrode;
A method for manufacturing a liquid crystal display device, comprising: In the manufacturing method of the liquid crystal display device described in Claim 3,
Forming the first transparent electrode and the gate electrode;
The first etching resist includes a first thick portion and a first thin portion having different thicknesses,
The first thick portion is disposed in a region where the gate electrode is formed;
The first thin portion is disposed in a region where the first transparent electrode is formed;
The first metal film is etched using the first thick part and the first thin part as a mask to form the gate electrode under the first thick part, and under the first thin part. Leaving the first metal film in a shape corresponding to the formation region of the first transparent electrode;
By the process of thinning the first thick part and the first thin part, the first thick part remains, the first thin part is removed, and the first transparent electrode is formed in the first formation region. Exposing the metal film,
Etching the first transparent conductive film using the exposed first metal film and the first thick portion as a mask to form the first transparent electrode under the exposed first metal film,
Using the first thick part as a mask, the exposed first metal film is removed by etching,
A method of manufacturing a liquid crystal display device, comprising peeling off the first etching resist. In the manufacturing method of the liquid crystal display device described in Claim 4,
Forming the first insulating layer;
The semiconductor layer is formed from a semiconductor material film,
The first insulating layer is formed of a first insulating material film,
The second etching resist includes a second thick part and a second thin part having different thicknesses,
Forming the semiconductor material film on the first insulating material film;
The second thick portion is disposed above the first insulating material film and on the semiconductor material film in a formation region of the semiconductor layer;
The second thin portion is disposed above the first insulating material film and on the semiconductor material film in a formation region of the first insulating layer;
Using the second thick part and the second thin part as a mask, the semiconductor material film and the first insulating material film are continuously etched to form the first insulating layer,
By the process of thinning the second thick part and the second thin part, the second thick part is left, the second thin part is removed, and the semiconductor material film is formed in a region other than the formation region of the semiconductor layer. To expose
Etching the semiconductor material film using the second thick part as a mask,
A method of manufacturing a liquid crystal display device, comprising peeling off the second etching resist. In the manufacturing method of the liquid crystal display device described in Claim 5,
The first insulating material film has an inclined surface in which the end portion of the first insulating layer is inclined toward the tip and inclined at an acute inclination angle on the end portion of the first transparent electrode. A method for manufacturing a liquid crystal display device, comprising: In the manufacturing method of the liquid crystal display device according to claim 5 or 6,
Forming the first wiring and the second wiring;
The first wiring and the second wiring are formed from a second metal film covering the semiconductor layer,
The third etching resist is disposed in a formation region of the first wiring and the second wiring,
Etching the second metal film as the third etching resist mask to form the first wiring and the second wiring,
A method of manufacturing a liquid crystal display device, comprising peeling off the third etching resist. In the manufacturing method of the liquid crystal display device described in Claim 7,
The semiconductor layer is formed so as to include a lower layer and an upper layer having a larger amount of impurities added than the lower layer,
After the second metal film is etched, the upper layer is etched so as to leave the lower layer of the semiconductor layer as the third etching resist mask. In the manufacturing method of the liquid crystal display device according to claim 7 or 8,
Forming the second insulating layer;
The second insulating layer is formed from a second insulating material film,
The fourth etching resist is disposed in a formation region of the second insulating layer;
Etching the second insulating material film as the fourth etching resist mask to form the second insulating layer;
A method of manufacturing a liquid crystal display device, comprising peeling off the fourth etching resist. In the manufacturing method of the liquid crystal display device described in Claim 9,
Forming the second transparent electrode;
The second transparent electrode is formed of a second transparent conductive film,
The fifth etching resist is disposed in a formation region of the second transparent electrode;
Etching the second transparent conductive film as the fifth etching resist mask to form the second transparent electrode,
A method of manufacturing a liquid crystal display device, comprising peeling off the fifth etching resist.

Images