JP2013084764A - Power semiconductor device - Google Patents

Power semiconductor device Download PDF

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JP2013084764A
JP2013084764A JP2011223619A JP2011223619A JP2013084764A JP 2013084764 A JP2013084764 A JP 2013084764A JP 2011223619 A JP2011223619 A JP 2011223619A JP 2011223619 A JP2011223619 A JP 2011223619A JP 2013084764 A JP2013084764 A JP 2013084764A
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external terminal
semiconductor device
conductor
connection member
power semiconductor
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JP5579148B2 (en
Inventor
Minoru Egusa
稔 江草
Seiji Oka
誠次 岡
Junji Fujino
純司 藤野
Kazuyoshi Shige
和良 重
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Coupling Device And Connection With Printed Circuit (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a small power semiconductor device capable of connecting an external terminal connection member to a conductor connected to a semiconductor element with a high position accuracy without providing an edge having a complicated shape, and connecting an external terminal to the external terminal connection member from an upper surface of the power semiconductor device.SOLUTION: A power semiconductor device 1 has semiconductor elements 14 and 15, conductors 13 to which the semiconductor elements 14 and 15 are connected, a base plate 25 disposed to the conductors 13 via an insulating layer 24, and columnar external terminal connection members 16 connected with the conductors 13. Each of the conductors 13 has an arrangement part 17 for positioning the external terminal connection member 16 in a predetermined permitted range, on an opposite surface to the insulating layer 24. Each of the external terminal connection members 16 is mounted on the arrangement part.

Description

本発明は、電力用半導体装置に関するものである。   The present invention relates to a power semiconductor device.

半導体装置の中には、比較的大きな電力を扱う電力用の半導体装置がある。このような電力用に用いられる半導体装置では、鉄道車両、ハイブリッドカー、電気自動車等の車両、家電機器、産業用機械等において、比較的大きな電力を制御、整流するために利用されている。したがって電力用の半導体装置で使用される半導体素子は１００Ａ／ｃｍ２を超える高い電流密度で通電することが求められる。そのため、近年はシリコン（Ｓｉ）に代わる半導体材料としてワイドバンドギャップ半導体材料である炭化珪素（ＳｉＣ）が注目されており、ＳｉＣからなる半導体素子は５００Ａ／ｃｍ２を超える電流密度での動作が可能である。また、ＳｉＣは１５０℃〜３００℃の高温状態でも安定動作が可能であり、高電流密度動作と高温動作の両立が可能な半導体材料として期待されている。 Among semiconductor devices, there are power semiconductor devices that handle relatively large power. Such semiconductor devices used for electric power are used for controlling and rectifying relatively large electric power in vehicles such as railway vehicles, hybrid cars, and electric vehicles, home appliances, and industrial machines. Therefore, a semiconductor element used in a power semiconductor device is required to be energized at a high current density exceeding 100 A / cm 2 . Therefore, in recent years, silicon carbide (SiC), which is a wide band gap semiconductor material, has attracted attention as a semiconductor material that replaces silicon (Si), and a semiconductor element made of SiC can operate at a current density exceeding 500 A / cm 2. It is. Further, SiC is capable of stable operation even at a high temperature of 150 ° C. to 300 ° C., and is expected as a semiconductor material capable of achieving both high current density operation and high temperature operation.

このように大電流を扱う電力用の半導体装置においては、電気的な絶縁を確保しながら、半導体素子等から発生する熱をいかに放熱するかが重要であり、小電流の半導体装置に比べて大型化している。大電流を扱う電力用の半導体装置を小型化したしたいという要求がある。   In power semiconductor devices that handle large currents in this way, it is important how to dissipate heat generated from semiconductor elements while ensuring electrical insulation, which is larger than small current semiconductor devices. It has become. There is a demand to reduce the size of power semiconductor devices that handle large currents.

特許文献１には、複数のパワー半導体チップを回路キャリアに搭載したパワー半導体モジュールが記載されている。パワー半導体チップは回路キャリアに形成された金属層に搭載され、パワー半導体チップと外部の回路基板との接続には、接触要素及び接触ピンを用いている。接触要素は金属層に半田付けされ、接触ピンは一端が接触要素の管に差し込まれ、接触ピンの他端は回路基板のスルーホールに挿入される。接触要素は管の上端部及び下端部にへりを有し、へりには互いに隙間のある２個以上の梁を設ける。接触要素のへりと金属層との間には、２個以上の梁により自由空間が形成され、この自由空間に半田を流し込むことで、接触要素と金属層との接続を高信頼で強固にしようとしていた。   Patent Document 1 describes a power semiconductor module in which a plurality of power semiconductor chips are mounted on a circuit carrier. The power semiconductor chip is mounted on a metal layer formed on a circuit carrier, and contact elements and contact pins are used to connect the power semiconductor chip and an external circuit board. The contact element is soldered to the metal layer, one end of the contact pin is inserted into the tube of the contact element, and the other end of the contact pin is inserted into a through hole in the circuit board. The contact element has edges at the upper and lower ends of the tube, and the edges are provided with two or more beams that are spaced from one another. Between the edge of the contact element and the metal layer, a free space is formed by two or more beams, and solder is poured into the free space, so that the connection between the contact element and the metal layer is made highly reliable and strong. I was trying.

ＵＳ ２００９／０１９４８８４Ａ１号公報（００２４段、００２５段、００３５段、００４１段、図１、図６、図１３）US 2009/0194884 A1 (0024, 0025, 0035, 0041, FIG. 1, FIG. 6, FIG. 13)

しかしながら、特許文献１に示された接触要素は、複雑な形状のへりを設けることで、接触要素と金属層との接続を高信頼で強固にすることはできるものの、接触要素の加工が複雑で、高コストになっていた。また、接触要素と金属層との半田付けの際に、溶融した半田が接触要素を引っ張ることで、接触要素を精度よく所定の位置に固定するこができない場合がある。   However, although the contact element disclosed in Patent Document 1 can provide a reliable edge with a complicated shape, the processing of the contact element is complicated. Was getting expensive. Further, when soldering the contact element and the metal layer, the contact element may not be accurately fixed at a predetermined position because the molten solder pulls the contact element.

本発明は、複雑な形状のへりを設けることなく外部端子接続部材を半導体素子に接続された導電体に高い位置精度で接続でき、電力用半導体装置の上面から外部端子接続部材に外部端子を接続できる小型の電力用半導体装置を得ることを目的とする。   The present invention can connect the external terminal connecting member to the conductor connected to the semiconductor element with high positional accuracy without providing a complicated shape edge, and connect the external terminal from the upper surface of the power semiconductor device to the external terminal connecting member. An object of the present invention is to obtain a small power semiconductor device.

本発明の電力用半導体装置は、半導体素子と、半導体素子が接続された導電体と、導電
体に絶縁層を介して配置されたベース板と、導電体に接続された柱状の外部端子接続部材と、を備える。導電体は、絶縁層と逆側の面に外部端子接続部材を所定の許容範囲内に位置決めする配置部を有し、外部端子接続部材は、配置部に搭載されたことを特徴とする。 The power semiconductor device of the present invention includes a semiconductor element, a conductor connected to the semiconductor element, a base plate disposed on the conductor via an insulating layer, and a columnar external terminal connecting member connected to the conductor. And comprising. The conductor has an arrangement part for positioning the external terminal connection member within a predetermined allowable range on a surface opposite to the insulating layer, and the external terminal connection member is mounted on the arrangement part.

本発明の電力用半導体装置によれば、導電体は、絶縁層と逆側の面に外部端子接続部材を所定の許容範囲内に位置決めする配置部を有し、外部端子接続部材は、配置部に搭載されたので、複雑な形状のへりを設けることなく外部端子接続部材を半導体素子に接続された導電体に高い位置精度で接続でき、外部端子を電力用半導体装置の上面から接続でき、電力用半導体装置を小型にすることができる。   According to the power semiconductor device of the present invention, the conductor has an arrangement portion that positions the external terminal connection member within a predetermined tolerance on the surface opposite to the insulating layer, and the external terminal connection member includes the arrangement portion. The external terminal connection member can be connected to the conductor connected to the semiconductor element with high positional accuracy without providing a complicated shape edge, and the external terminal can be connected from the upper surface of the power semiconductor device. The semiconductor device for use can be reduced in size.

本発明の実施の形態１による電力用半導体装置の断面図である。It is sectional drawing of the semiconductor device for electric power by Embodiment 1 of this invention. 実施の形態１による電力用半導体装置の斜視図である。1 is a perspective view of a power semiconductor device according to a first embodiment. 実施の形態１による外部端子接続部材の斜視図である。3 is a perspective view of an external terminal connecting member according to Embodiment 1. FIG. 図１の導電体における外部端子接続部材の配置部の上面図である。It is a top view of the arrangement | positioning part of the external terminal connection member in the conductor of FIG. 図１の導電体における外部端子接続部材の配置部の断面図である。It is sectional drawing of the arrangement | positioning part of the external terminal connection member in the conductor of FIG. 実施の形態１による外部端子の斜視図である。3 is a perspective view of an external terminal according to Embodiment 1. FIG. 実施の形態１による外部端子接続部材の配置部の加工例を説明する図である。6 is a diagram for explaining a processing example of an arrangement portion of the external terminal connection member according to Embodiment 1. FIG. 実施の形態１による他の外部端子接続部材の配置部の上面図である。FIG. 6 is a top view of an arrangement portion of another external terminal connecting member according to the first embodiment. 本発明の実施の形態２による電力用半導体装置の断面図である。It is sectional drawing of the semiconductor device for electric power by Embodiment 2 of this invention. 実施の形態２による外部端子接続部材の斜視図である。6 is a perspective view of an external terminal connecting member according to Embodiment 2. FIG. 図１０の外部端子接続部材の断面図である。It is sectional drawing of the external terminal connection member of FIG. 実施の形態２による外部端子の正面図及び側面図である。It is the front view and side view of an external terminal by Embodiment 2. 実施の形態２による他の外部端子の正面図及び側面図である。It is the front view and side view of another external terminal by Embodiment 2. 実施の形態２による更に他の外部端子の斜視図である。FIG. 10 is a perspective view of still another external terminal according to Embodiment 2. 本発明の実施の形態３による電力用半導体装置の断面図である。It is sectional drawing of the semiconductor device for electric power by Embodiment 3 of this invention. 図１５の導電体における外部端子接続部材の配置部の断面図である。It is sectional drawing of the arrangement | positioning part of the external terminal connection member in the conductor of FIG. 図１５の導電体における他の外部端子接続部材の配置部の断面図である。It is sectional drawing of the arrangement | positioning part of the other external terminal connection member in the conductor of FIG. 本発明の実施の形態４による絶縁基板の断面図である。It is sectional drawing of the insulated substrate by Embodiment 4 of this invention. 図１８の外部端子接続部材の配置部の断面拡大図である。It is a cross-sectional enlarged view of the arrangement | positioning part of the external terminal connection member of FIG. 実施の形態４による外部端子接続部材の半田付け前の図である。FIG. 10 is a diagram before soldering of an external terminal connecting member according to a fourth embodiment. 実施の形態４による外部端子接続部材の半田付け後の図である。FIG. 10 is a diagram after soldering of an external terminal connecting member according to a fourth embodiment. 実施の形態４による他の外部端子接続部材の配置部の断面拡大図である。FIG. 12 is an enlarged cross-sectional view of another arrangement portion of external terminal connection members according to the fourth embodiment. 図２２の配置部における外部端子接続部材の半田付け前の図である。It is a figure before soldering of the external terminal connection member in the arrangement | positioning part of FIG.

実施の形態１．
図１は本発明の実施の形態１による電力用半導体装置の断面図であり、図２は実施の形態１による電力用半導体装置の斜視図である。図３は実施の形態１による外部端子接続部材の斜視図であり、図４は図１の導電体における外部端子接続部材の配置部の上面図である。図５は図１の導電体における外部端子接続部材の配置部の断面図であり、図６は実施の形態１による外部端子の斜視図である。電力用半導体装置１は、トランスファーモールドと呼ばれるモールド樹脂１１により封止されたトランスファーモールド型電力用半導体装置である。電力用半導体装置１は、ベース板２５上に絶縁層２４を設け、その上に導電性の導電体１３が形成されている放熱性の高い絶縁基板２３を備える。導電体１３上には、ＩＧＢＴ(Insulated Gate Bipolar Transistor)である半導体素子１４とＦｗＤｉ(Free Wheeling Diode)である半導体素子１５がはんだ付けされている。そして、半導体素子１４と半導体素子１５との間、あるいは半導体素子１４、１５と導電体１３との間は、直径１００〜５００μｍ程度のアルミニュウム（Ａｌ）あるいは銅（Ｃｕ）のワイヤ２０にてワイヤボンドされている。 Embodiment 1 FIG.
FIG. 1 is a sectional view of a power semiconductor device according to the first embodiment of the present invention, and FIG. 2 is a perspective view of the power semiconductor device according to the first embodiment. 3 is a perspective view of the external terminal connection member according to the first embodiment, and FIG. 4 is a top view of an arrangement portion of the external terminal connection member in the conductor of FIG. 5 is a cross-sectional view of an arrangement portion of the external terminal connecting member in the conductor of FIG. 1, and FIG. 6 is a perspective view of the external terminal according to the first embodiment. The power semiconductor device 1 is a transfer mold type power semiconductor device sealed with a mold resin 11 called a transfer mold. The power semiconductor device 1 includes an insulating substrate 23 having a high heat dissipation property, on which an insulating layer 24 is provided on a base plate 25, and a conductive conductor 13 is formed thereon. On the conductor 13, a semiconductor element 14 that is an IGBT (Insulated Gate Bipolar Transistor) and a semiconductor element 15 that is an FwDi (Free Wheeling Diode) are soldered. A wire bond between the semiconductor element 14 and the semiconductor element 15 or between the semiconductor elements 14 and 15 and the conductor 13 is made with an aluminum (Al) or copper (Cu) wire 20 having a diameter of about 100 to 500 μm. Has been.

絶縁基板２３の導電体１３上に外部端子接続部材１６を配置する。この外部端子接続部材１６は、外部からの制御信号を受け取ったり、大電流を流したりするため、すなわち、外部と接続するために用いられる。モールド封止後の電力用半導体装置１から露出した外部端子接続部材１６の端部には、図６に示すような銅あるいは銅系の合金からなるＬ字型の外部端子２１が接続される。外部端子２１の一端は、プリント基板等のスルーホールへ挿入され、半田にて接続される。スルーホールの寸法は、外部端子２１の一端よりも大きく設計され、半田にて接続されるため、外部端子２１と外部端子接続部材１６との間に位置ずれがあったとしても、その位置ずれはスルーホールにより容易に吸収できる。   The external terminal connection member 16 is disposed on the conductor 13 of the insulating substrate 23. The external terminal connecting member 16 is used for receiving a control signal from the outside and for passing a large current, that is, for connecting to the outside. An L-shaped external terminal 21 made of copper or a copper-based alloy as shown in FIG. 6 is connected to the end of the external terminal connection member 16 exposed from the power semiconductor device 1 after mold sealing. One end of the external terminal 21 is inserted into a through hole such as a printed board and connected by solder. The dimension of the through hole is designed to be larger than one end of the external terminal 21 and is connected by soldering. Therefore, even if there is a positional shift between the external terminal 21 and the external terminal connecting member 16, the positional shift is It can be easily absorbed by the through hole.

外部端子接続部材１６の詳細については、図３を用いて説明する。外部端子接続部材１６は、例えば直径２〜３ｍｍ、高さ５ｍｍの円柱からなり、材料は純銅あるいは銅系の合金からなる。また外部端子接続部材１６は半田を用いて導電体１３に接続される。円柱形状である理由は、左右対称であり方向を問わないため、製造が容易であることである。また、モールド後の温度サイクルなどにより応力が生じるが、円柱形状によりモールド樹脂１１と外部端子接続部材１６との界面の応力集中箇所を低減することが可能である。外部端子接続部材１６を純銅あるいは銅系の合金で構成することにより、外部端子接続部材１６を安価で高熱伝導率にすることができる。高熱伝導率な外部端子接続部材１６を用いることで、電力用半導体装置１の放熱性を高めることができる。   Details of the external terminal connecting member 16 will be described with reference to FIG. The external terminal connection member 16 is made of, for example, a cylinder having a diameter of 2 to 3 mm and a height of 5 mm, and the material is made of pure copper or a copper-based alloy. The external terminal connection member 16 is connected to the conductor 13 using solder. The reason for the cylindrical shape is that it is easy to manufacture because it is bilaterally symmetric and can be used in any direction. Further, although stress is generated due to a temperature cycle after molding, it is possible to reduce the stress concentration portion at the interface between the mold resin 11 and the external terminal connecting member 16 due to the cylindrical shape. By configuring the external terminal connecting member 16 with pure copper or a copper-based alloy, the external terminal connecting member 16 can be made inexpensive and have high thermal conductivity. By using the external terminal connection member 16 having high thermal conductivity, the heat dissipation of the power semiconductor device 1 can be improved.

絶縁基板２３の導電体１３について、図１、図４及び図５を用いて説明する。導電体１３は銅あるいは銅系の合金からなり、厚さは０．５ｍｍである。それぞれの導電体１３の形状は、エッチング加工により形成される。そして、導電体１３における外部端子接続部材１６の搭載する配置部には、外部端子接続部材１６の外径よりも０．０５ｍｍ大きい外径の窪み１７が形成されている。配置部は外部端子接続部材１６を所定の許容範囲内に位置決めするものである。窪み１７の深さは０．２ｍｍである。そして、窪み１７内に、ディスペンサを用いて、ペースト半田が塗布される。その後、外部端子接続部材１６が窪み１７に搭載される。その後、リフロー炉などの加熱設備を用いて、絶縁基板を加熱し外部端子接続部材１６と基板上のパターンとが半田付けされる。   The conductor 13 of the insulating substrate 23 will be described with reference to FIGS. The conductor 13 is made of copper or a copper-based alloy and has a thickness of 0.5 mm. The shape of each conductor 13 is formed by etching. A recess 17 having an outer diameter 0.05 mm larger than the outer diameter of the external terminal connection member 16 is formed in the placement portion of the conductor 13 on which the external terminal connection member 16 is mounted. The arrangement portion is for positioning the external terminal connecting member 16 within a predetermined allowable range. The depth of the recess 17 is 0.2 mm. Then, paste solder is applied into the recess 17 using a dispenser. Thereafter, the external terminal connection member 16 is mounted in the recess 17. Thereafter, the insulating substrate is heated using a heating facility such as a reflow furnace, and the external terminal connection member 16 and the pattern on the substrate are soldered.

上記のように、導電体１３の窪み１７に円柱状の外部端子接続部材１６を配置する構成とした理由を示す。外部端子接続部材１６に接続される外部端子２１とプリント基板側との接続において、高精度な位置合わせが要求される場合がある。半田溶融時に、半田は外部端子接続部材１６に対して濡れ力を作用させる。ここで、濡れ力は、半田が外部端子接続部材１６へと濡れた際に、半田が外部端子接続部材１６を引っ張る力である。そのため、特別な工夫がない場合には、半田付け前の外部端子接続部材１６の搭載位置と半田付け後の外部端子接続部材１６の搭載位置は、百〜数百μｍ程度のずれを生じる場合がある。しかしながら、実施の形態１の構造では、導電体１３上に外部端子接続部材１６を許容範囲内に位置決めするための窪み１７が形成されている。この外部端子接続部材１６を許容範囲内に位置決めするための窪み１７は、エッチングにより形成するので、高精度な加工が可能である。そのため、半田溶融時や半田凝固時などにおいて、外部端子接続部材１６に対して濡れ力が作用しても外部端子接続部材１６が動く範囲は窪み１７内であるため、外部端子接続部材１６が動くのは±５０μｍ範囲内となり、外部端子接続部材１６の搭載位置を高精度化することができる。つまり、半田溶融時や半田凝固時の濡れ力により外部端子接続部材１６が窪み１７の内壁に接触することにより、窪み１７の内壁が外部端子接続部材１６の変位範囲を制限することができる。   The reason why the cylindrical external terminal connecting member 16 is arranged in the recess 17 of the conductor 13 as described above will be described. In the connection between the external terminal 21 connected to the external terminal connection member 16 and the printed circuit board side, high-precision alignment may be required. When the solder is melted, the solder applies a wetting force to the external terminal connection member 16. Here, the wetting force is a force by which the solder pulls the external terminal connecting member 16 when the solder gets wet to the external terminal connecting member 16. Therefore, if there is no special idea, the mounting position of the external terminal connecting member 16 before soldering and the mounting position of the external terminal connecting member 16 after soldering may be shifted by about one hundred to several hundred μm. is there. However, in the structure of the first embodiment, a recess 17 for positioning the external terminal connecting member 16 within an allowable range is formed on the conductor 13. Since the recess 17 for positioning the external terminal connection member 16 within the allowable range is formed by etching, high-precision processing is possible. Therefore, the external terminal connection member 16 moves because the range in which the external terminal connection member 16 moves even if the wetting force is applied to the external terminal connection member 16 when the solder is melted or solidified. Is within the range of ± 50 μm, and the mounting position of the external terminal connecting member 16 can be made highly accurate. That is, the external terminal connection member 16 comes into contact with the inner wall of the recess 17 by the wetting force at the time of solder melting or solder solidification, so that the inner wall of the recess 17 can limit the displacement range of the external terminal connection member 16.

さらに、外部端子接続部材１６の周囲に段差、すなわち窪み１７を設ける事によって、
搬送時などに慣性力により外部端子接続部材１６が窪み１７の範囲外へ動いてしまうことを防止することができる。したがって、外部端子接続部材１６の搭載後から半田付けまでに生じる振動や半田付けのためのリフロー装置内での搬送時の基板主面方向の慣性力による外部端子接続部材１６の移動を拘束し、位置ずれを防止することが可能となり、容易に外部端子接続部材１６の搭載位置を高精度化することができる。また搭載後からリフロー装置までの人手によるハンドリングにおいても、外部端子接続部材１６の位置ずれの心配が無く、作業性が大幅に上がる。 Furthermore, by providing a step, that is, a depression 17 around the external terminal connection member 16,
It is possible to prevent the external terminal connecting member 16 from moving out of the range of the recess 17 due to inertial force during conveyance. Therefore, it restrains the movement of the external terminal connection member 16 due to the inertial force in the direction of the substrate main surface at the time of conveyance in the reflow apparatus for soldering and the vibration generated after the mounting of the external terminal connection member 16, Positional displacement can be prevented, and the mounting position of the external terminal connecting member 16 can be easily made highly accurate. Further, in handling by hand from the mounting to the reflow device, there is no concern about the positional displacement of the external terminal connecting member 16 and the workability is greatly improved.

特許文献１の構造では、外部端子接続部材に相当する接触要素の形状が煩雑であり、外接触要素の加工が非常に困難であり、高コストとなる。これに対して、実施の形態１の構造では、絶縁基板２３の導電体１３をエッチングすることにより作製が可能であるので、エッチング加工は、マスクや加工費が非常に安価であり低コストである。また、数Ａから数百Ａという定格容量の広範な範囲において生産される電力用半導体装置１では、電力用半導体装置１自体のサイズも多種多様であり、特許文献１の構造では、接触要素の内径及び外形も多様となる。これに対して、実施の形態１の構造だと、導電体１３をエッチングするマスクを変更するだけで対応可能で有り、非常に安価である。さらに、導電体１３はエッチングにより加工されるため、１回のエッチング工程において、導電体１３のエッチングと同時に窪み１７の加工が可能となり、コストアップは全く無い。加工方法の例として、まず、窪み１７をハーフエッチし、その後、導電体１３をエッチングする。特許文献１の構造は、異なる外部端子接続部材１６の形状に対して、その都度数百万円という高価な金型を使用して接触要素のつばの部分を加工しなければならない特許文献１とは大きく異なる。   In the structure of Patent Document 1, the shape of the contact element corresponding to the external terminal connecting member is complicated, and it is very difficult to process the external contact element, resulting in high cost. On the other hand, the structure of the first embodiment can be manufactured by etching the conductor 13 of the insulating substrate 23. Therefore, the etching process is very inexpensive because the mask and the processing cost are very low. . Moreover, in the power semiconductor device 1 produced in a wide range of rated capacity of several A to several hundred A, the size of the power semiconductor device 1 itself is also various. The inner diameter and outer shape also vary. On the other hand, the structure of the first embodiment can be dealt with only by changing the mask for etching the conductor 13, and is very inexpensive. Furthermore, since the conductor 13 is processed by etching, the recess 17 can be processed simultaneously with the etching of the conductor 13 in one etching step, and there is no cost increase. As an example of the processing method, first, the recess 17 is half-etched, and then the conductor 13 is etched. The structure of Patent Document 1 requires that the collar portion of the contact element be processed using an expensive mold of several million yen each time for different shapes of the external terminal connection member 16. Is very different.

また、外部端子接続部材１６の搭載精度向上のためには、窪み１７を設けるという方法の他に、治具などによる方法がある。しかしながら、治具により±５０μｍの精度で外部端子接続部材１６を搭載するには次の課題がある。外部端子接続部材１６の高さは、電力用半導体装置１の外部との絶縁を確保するためには、低くすることはできない。外径が２ｍｍに対して、高さ５ｍｍという外部端子接続部材１６はアスペクト比が大きく、傾きやすい。わずかな傾きの影響で、外部端子接続部材１６の外壁と外部端子接続部材１６を外側から保持する治具の内壁とが接触した状態となり、この状態で半田付けされると、治具が外しにくくなるという問題がある。   In addition to improving the mounting accuracy of the external terminal connecting member 16, there is a method using a jig or the like in addition to the method of providing the recess 17. However, mounting the external terminal connection member 16 with a jig with an accuracy of ± 50 μm has the following problems. The height of the external terminal connecting member 16 cannot be lowered in order to ensure insulation from the outside of the power semiconductor device 1. The external terminal connecting member 16 having an outer diameter of 2 mm and a height of 5 mm has a large aspect ratio and is easily inclined. Due to the slight inclination, the outer wall of the external terminal connection member 16 and the inner wall of the jig that holds the external terminal connection member 16 from the outside are in contact with each other. If soldered in this state, the jig is difficult to remove. There is a problem of becoming.

さらに、大きな力で治具を外そうとした場合、絶縁基板２３や外部端子接続部材１６の半田付け部などにダメージを与える場合がある。治具による半田付けにより高精度を目指す場合、治具の加工が煩雑となり、コストが非常に高くなるという問題がある。また、治具を使用する場合、重い治具の取り外しにおいて、装置コストが高くなるという問題もある。したがって、高精度でかつ低コストに外部端子接続部材１６を半田付けする場合には、実施の形態１の構造が最も優れている。   Further, when the jig is removed with a large force, the insulating substrate 23 or the soldered portion of the external terminal connecting member 16 may be damaged. When aiming for high accuracy by soldering with a jig, there is a problem that the machining of the jig becomes complicated and the cost becomes very high. Further, when using a jig, there is a problem that the cost of the apparatus becomes high when removing a heavy jig. Therefore, when the external terminal connection member 16 is soldered with high accuracy and low cost, the structure of the first embodiment is most excellent.

窪み１７の形状は、図５に示した断面形状以外であってもよい。図７は、実施の形態１による外部端子接続部材の配置部の加工例を説明する図である。図７のように、エッチングファクターの影響で窪み１７の底面に丸み（Ｒ部）が形成される場合がある。この場合には、窪み１７の周辺部分において、図７の矢印３５の方向に窪み１７の周辺部分の導電体１３をプレスにより加圧することで、窪み１７の上部を図７のように底部よりも更に内側に変形させる。窪み１７の上部の内側に変形させた変形部１７ａが外部端子接続部材１６を押圧するので、外部端子接続部材１６を許容範囲内に位置決めすることが可能である。   The shape of the recess 17 may be other than the cross-sectional shape shown in FIG. FIG. 7 is a diagram for explaining a processing example of the arrangement portion of the external terminal connection member according to the first embodiment. As shown in FIG. 7, a roundness (R portion) may be formed on the bottom surface of the depression 17 due to the influence of the etching factor. In this case, in the peripheral portion of the recess 17, the conductor 13 in the peripheral portion of the recess 17 is pressed by pressing in the direction of the arrow 35 in FIG. 7, so that the upper portion of the recess 17 is lower than the bottom as shown in FIG. 7. Further inward deformation. Since the deformed portion 17a deformed inside the upper portion of the depression 17 presses the external terminal connection member 16, it is possible to position the external terminal connection member 16 within an allowable range.

さらに、図８に示す外部端子接続部材の配置部の上面図のように、窪み１７と深さが同じスリット２７を少なくとも１つ設けることで、次のような効果を発揮する。図８は、実
施の形態１による他の外部端子接続部材の配置部の上面図である。溶融した半田がスリット２７を介して窪み１７の外側に逃げることで、外部端子接続部材１６下の半田量の適正化が可能である。ディスペンサによる半田供給では、半田量に微小なばらつきが発生するため、目標値は、必要量よりもやや多めに設定せざるを得ない。その場合、供給過剰となった半田をスリット２７から窪み１７の外部に逃がすことで、外部端子接続部材１６及び窪み１７と半田との接合面積が一定となり、製造中の外部端子接続部材１６の接合強度が一定となり、設計が容易となる。また、樹脂封止時にスリット２７内に、モールド樹脂１１が流れ込むことで、電力用半導体装置１はアンカー効果による温度サイクルなどの信頼性が向上する。スリット２７の形状として、窪み１７から外方向に延びる幅が端部以外は同一である場合も考えられる。この場合は、半田を逃がすための効果は多少劣るものの、半田のボイド抜きの効果は発揮する。図８のようにスリット２７の外側を大きくする程、半田をスリット２７に逃がす力を大きくすることができ、製造中の外部端子接続部材１６と導電体１３との接合強度を一定にすることができる。 Furthermore, as shown in the top view of the arrangement portion of the external terminal connecting member shown in FIG. 8, the following effects are exhibited by providing at least one slit 27 having the same depth as the recess 17. FIG. 8 is a top view of an arrangement portion of another external terminal connecting member according to the first embodiment. The molten solder escapes to the outside of the recess 17 through the slit 27, so that the amount of solder under the external terminal connection member 16 can be optimized. In the solder supply by the dispenser, a slight variation occurs in the amount of solder, so the target value must be set slightly larger than the required amount. In that case, by letting the excessively supplied solder escape from the slit 27 to the outside of the recess 17, the joint area between the external terminal connection member 16 and the recess 17 and the solder becomes constant, and the joint of the external terminal connection member 16 being manufactured is joined. The strength is constant and the design is easy. Further, since the mold resin 11 flows into the slit 27 at the time of resin sealing, the power semiconductor device 1 is improved in reliability such as a temperature cycle due to the anchor effect. As the shape of the slit 27, a case where the width extending outward from the depression 17 is the same except for the end portion is also conceivable. In this case, although the effect for releasing the solder is somewhat inferior, the effect of voiding the solder is exhibited. As the outer side of the slit 27 is increased as shown in FIG. 8, the force for releasing the solder into the slit 27 can be increased, and the bonding strength between the external terminal connecting member 16 and the conductor 13 during manufacture can be made constant. it can.

外部端子接続部材１６の材料は銅あるいは銅系の合金以外でも、ベア材あるいはめっきを施した後の表面に半田が濡れることが可能であれば、外部端子接続部材１６として用いることができる。外部端子接続部材内壁へ半田が濡れあがることで、外部端子接続部材とパターンとの接合面積が上がり、接続強度がアップするため、高信頼となる。また、外部端子接続部材１６の表面に半田が濡れる効果がない導電材料であっても、銀ペーストなどの導電性ペーストにおいて接着が可能なものであれば、外部端子接続部材１６として用いることができる。   The external terminal connection member 16 can be used as the external terminal connection member 16 as long as the solder can be wetted on the bare material or the surface after plating, even if the material is copper or a copper alloy. Since the solder wets onto the inner wall of the external terminal connection member, the bonding area between the external terminal connection member and the pattern is increased and the connection strength is increased, so that high reliability is achieved. Moreover, even if it is a conductive material which does not have the effect of solder getting wet on the surface of the external terminal connection member 16, it can be used as the external terminal connection member 16 as long as it can be bonded with a conductive paste such as silver paste. .

前述した外部端子２１と外部端子接続部材１６との接続は、超音波による接続が可能である。実施の形態１の外部端子２１はＬ字型形状となっており、超音波ホーンを端子にしっかりと押し付けて超音波を発振することができるので、強固な接合が可能である。ＳｉＣなどの高温動作可能な素子を搭載した電力用半導体装置１においては、電力用半導体装置１全体が高温で動作するため、外部端子２１と外部端子接続部材１６との接続は、強い接合強度が必要である。実施の形態１の構造では、外部端子２１と外部端子接続部材１６との接続は超音波などの直接接合を用いることで、接合強度が強く、高信頼の接合を得ることができる。   The connection between the external terminal 21 and the external terminal connection member 16 described above can be performed by ultrasonic waves. The external terminal 21 according to the first embodiment has an L-shape, and the ultrasonic horn can be firmly pressed against the terminal to oscillate ultrasonic waves, so that strong bonding is possible. In the power semiconductor device 1 on which an element capable of high temperature operation such as SiC is mounted, the entire power semiconductor device 1 operates at a high temperature. Therefore, the connection between the external terminal 21 and the external terminal connection member 16 has a strong bonding strength. is necessary. In the structure of the first embodiment, the connection between the external terminal 21 and the external terminal connecting member 16 uses direct bonding such as ultrasonic waves, so that the bonding strength is strong and a highly reliable bonding can be obtained.

半導体素子１４、１５は、シリコンウエハを基材とした一般的な素子でもよいが、本発明においては炭化珪素（ＳｉＣ）や窒化ガリウム（ＧａＮ）系材料、またはダイヤモンドといったシリコンと較べてバンドギャップが広い、いわゆるワイドバンドギャップ半導体材料を適用できる。デバイス種類としては、特に限定する必要はないが、ＩＧＢＴ（Insulated Gate Bipolar Transistor）以外にもＭＯＳＦＥＴ（Metal Oxide Semiconductor Field-Effect-Transistor）のようなスイッチング素子、やダイオードのような整流素子を搭載することができる。例えば、スイッチング素子や整流素子として機能する半導体素子１４、１５に、炭化珪素（ＳｉＣ）や窒化ガリウム（ＧａＮ）系材料又はダイヤモンドを用いた場合、従来から用いられてきたシリコン（Ｓｉ）で形成された素子よりも電力損失が低いため、電力用半導体装置の高効率化が可能となる。また、耐電圧性が高く、許容電流密度も高いため、電力用半導体装置１の小型化が可能となる。さらにワイドバンドギャップ半導体素子は、耐熱性が高いので、高温動作が可能であり、放熱フィンの小型化や、水冷部の空冷化も可能となるので、放熱フィンを備えた半導体装置モジュールの一層の小型化が可能になる。   The semiconductor elements 14 and 15 may be general elements based on a silicon wafer. However, in the present invention, the band gap is larger than silicon carbide (SiC), gallium nitride (GaN) -based materials, or silicon such as diamond. A wide so-called wide band gap semiconductor material can be applied. The device type is not particularly limited, but a switching element such as a MOSFET (Metal Oxide Semiconductor Field-Effect-Transistor) or a rectifying element such as a diode is mounted in addition to an IGBT (Insulated Gate Bipolar Transistor). be able to. For example, when silicon carbide (SiC), gallium nitride (GaN) -based material, or diamond is used for the semiconductor elements 14 and 15 functioning as switching elements and rectifying elements, the semiconductor elements 14 and 15 are formed of silicon (Si) that has been conventionally used. Since the power loss is lower than that of the element, the efficiency of the power semiconductor device can be increased. Further, since the withstand voltage is high and the allowable current density is also high, the power semiconductor device 1 can be downsized. Furthermore, since the wide band gap semiconductor element has high heat resistance, it can operate at a high temperature, and the radiating fin can be downsized and the water-cooled part can be cooled by air. Miniaturization is possible.

以上のように実施の形態１の電力用半導体装置１によれば、半導体素子１４、１５と、半導体素子１４、１５が接続された導電体１３と、導電体１３に絶縁層２４を介して配置されたベース板２５と、導電体１３に接続された柱状の外部端子接続部材１６と、を備え、導電体１３は、絶縁層２４と逆側の面に窪み１７が形成され、外部端子接続部材１６を所定の許容範囲内に位置決めする配置部を有し、外部端子接続部材１６は、窪み１７が形成された配置部に搭載されたので、複雑な形状のへりを設けることなく外部端子接続部材１６を半導体素子１４、１５に接続された導電体に高い位置精度で接続でき、外部端子を電力用半導体装置の上面から接続でき、電力用半導体装置を小型にすることができる。   As described above, according to the power semiconductor device 1 of the first embodiment, the semiconductor elements 14 and 15, the conductor 13 to which the semiconductor elements 14 and 15 are connected, and the conductor 13 via the insulating layer 24. The base plate 25 and the columnar external terminal connection member 16 connected to the conductor 13, and the conductor 13 has a recess 17 formed on the surface opposite to the insulating layer 24, and the external terminal connection member Since the external terminal connection member 16 is mounted on the arrangement portion in which the recess 17 is formed, the external terminal connection member is provided without providing a complicated edge. 16 can be connected to the conductors connected to the semiconductor elements 14 and 15 with high positional accuracy, the external terminals can be connected from the upper surface of the power semiconductor device, and the power semiconductor device can be downsized.

実施の形態２．
図９は、本発明の実施の形態２による電力用半導体装置の断面図である。図１０は実施の形態２による外部端子接続部材の斜視図であり、図１１は外部端子接続部材の断面図である。実施の形態２の電力用半導体装置１は、実施の形態１の電力用半導体装置１とは、外部端子接続部材が長軸方向に貫通した貫通孔４１を有する外部端子接続部材１８である点で異なる。 Embodiment 2. FIG.
FIG. 9 is a cross-sectional view of the power semiconductor device according to the second embodiment of the present invention. FIG. 10 is a perspective view of an external terminal connection member according to Embodiment 2, and FIG. 11 is a cross-sectional view of the external terminal connection member. The power semiconductor device 1 according to the second embodiment is different from the power semiconductor device 1 according to the first embodiment in that the external terminal connection member 18 is an external terminal connection member 18 having a through hole 41 penetrating in the major axis direction. Different.

外部端子接続部材１８は、外壁と貫通孔４１の内面により形成された外周壁部を有する。外部端子接続部材１８の外周壁部の上下にはテーパー部２９が設けられている。テーパー部２９は、後述する外部端子の挿入時のガイドの役割を果たす他、外部端子の表面のめっきが過度に削れることを抑制する役割がある。また、外周壁部の上側と下側にテーパー部２９を付けることで、外部端子接続部材１８を絶縁基板２３上に供給する際に、外部端子接続部材１８の上下方向を識別することがないので、外部端子接続部材１８の供給を容易にでき、外部端子接続部材１８の上下方向を識別する場合にくらべて、タクトタイムが短くでき、製造コストを低くすることがきる。   The external terminal connecting member 18 has an outer peripheral wall portion formed by the outer wall and the inner surface of the through hole 41. Tapered portions 29 are provided above and below the outer peripheral wall portion of the external terminal connecting member 18. The taper portion 29 has a role of suppressing excessive scraping of the plating on the surface of the external terminal, in addition to serving as a guide when inserting the external terminal described later. Further, since the tapered portions 29 are provided on the upper and lower sides of the outer peripheral wall portion, when the external terminal connection member 18 is supplied onto the insulating substrate 23, the vertical direction of the external terminal connection member 18 is not identified. The external terminal connection member 18 can be easily supplied, and the tact time can be shortened and the manufacturing cost can be reduced as compared with the case where the vertical direction of the external terminal connection member 18 is identified.

外部端子接続部材１８は貫通孔４１を有するので、半田を用いずに接続するスナップフィット型の外部端子を貫通孔４１に挿入することにより、外部端子接続部材１８は外部端子１９と接続することができる。   Since the external terminal connection member 18 has the through hole 41, the external terminal connection member 18 can be connected to the external terminal 19 by inserting a snap-fit type external terminal to be connected without using solder into the through hole 41. it can.

円筒形状の外部端子接続部材１８と外部端子１９について詳しく説明する。電力用半導体装置１を作製した後に、外部端子接続部材１８の貫通孔４１内には、外部端子１９として、図１２に示すようなプレスフィット型の外部端子１９が挿入される。プレスフィット型の外部端子は、プレスフィット端子とも呼ばれる。図１２は、実施の形態２による外部端子の正面図及び側面図である。図１２（ａ）は正面図であり、図１２（ｂ）は側面図である。   The cylindrical external terminal connecting member 18 and the external terminal 19 will be described in detail. After producing the power semiconductor device 1, a press-fit type external terminal 19 as shown in FIG. 12 is inserted into the through hole 41 of the external terminal connecting member 18 as the external terminal 19. A press-fit type external terminal is also called a press-fit terminal. FIG. 12 is a front view and a side view of the external terminal according to the second embodiment. FIG. 12A is a front view, and FIG. 12B is a side view.

プレスフィット型の外部端子１９は、内部接続部１９ａと外部接続部１９ｂを有する。内部接続部１９ａは、外部端子接続部材１８の貫通孔４１内に挿入される。外部接続部１９ｂは、プリント基板等のスルーホールへ挿入され、半田にて接続される。挿入後にニードルアイ形状の箇所である内部接続部１９ａが外部端子接続部材１８の内壁に対して反発力を働かせるような構造となっている。プレスフィット型の外部端子１９は、半田付けすることなく、ハンドプレスなどで簡単に挿入しプレスフィット型の外部端子１９と外部端子接続部材１８とを接続することができる。   The press-fit type external terminal 19 has an internal connection part 19a and an external connection part 19b. The internal connection portion 19 a is inserted into the through hole 41 of the external terminal connection member 18. The external connection portion 19b is inserted into a through hole such as a printed board and connected by solder. The internal connection part 19a which is a needle eye-shaped part after insertion is configured to exert a repulsive force against the inner wall of the external terminal connection member 18. The press-fit type external terminals 19 can be simply inserted by a hand press or the like without soldering, and the press-fit type external terminals 19 and the external terminal connection member 18 can be connected.

このような構成とした理由を示す。外部端子接続部材を、貫通孔４１の形成された外部端子接続部材１８にすることで、プレスフィット端子などの外部端子１９の挿入が可能となる。プレスフィット端子などのソルダレス（半田を使わない）端子は、この端子と外部端子接続部材１８の位置精度が非常に重要である。なぜなら、外部端子接続部材１８の内壁に対して反発力を生じることで接触を維持する構造であるため、プレスフィット部である内部接続部１９ａの左右の圧接部は、それぞれが同等の荷重を外部端子接続部材１８の内壁に生じる必要がある。そのため、外部端子接続部材１８のほぼ中央に端子の中心軸がくるように、プレスフィット型の外部端子１９を外部端子接続部材１８の貫通孔４１に挿入する必要があり、そのために、外部端子接続部材１８の搭載では非常に厳しい精度が要求される。実施の形態２の構造では、窪み１７の内部に外部端子接続部材１８を固定する
ことができるため、半田付け前後における外部端子接続部材１８の位置ずれは非常に小さく、プレスフィット端子挿入後に、適正な反発力を生じることができる。実施の形態２の構造では、導電体１３の窪み１７に外部端子接続部材１８を固定することができるため、半田付け前後における外部端子接続部材１８の位置ずれは非常に小さく、プレスフィット型の外部端子１９の挿入後に、適正な反発力を生じることができる。 The reason why such a configuration is adopted will be described. By using the external terminal connecting member 18 having the through hole 41 as the external terminal connecting member, the external terminal 19 such as a press-fit terminal can be inserted. For a solderless (not using solder) terminal such as a press-fit terminal, the positional accuracy of this terminal and the external terminal connecting member 18 is very important. This is because the contact is maintained by generating a repulsive force against the inner wall of the external terminal connection member 18, so that the left and right pressure contact portions of the internal connection portion 19a, which is a press-fit portion, each receive an equivalent load. It needs to occur on the inner wall of the terminal connection member 18. For this reason, it is necessary to insert the press-fit type external terminal 19 into the through hole 41 of the external terminal connection member 18 so that the center axis of the terminal is substantially at the center of the external terminal connection member 18. The mounting of the member 18 requires very strict accuracy. In the structure of the second embodiment, since the external terminal connection member 18 can be fixed inside the recess 17, the positional displacement of the external terminal connection member 18 before and after soldering is very small, and it is appropriate after inserting the press-fit terminal. Repulsive force can be generated. In the structure of the second embodiment, since the external terminal connection member 18 can be fixed to the recess 17 of the conductor 13, the positional displacement of the external terminal connection member 18 before and after soldering is very small, and a press-fit type external An appropriate repulsive force can be generated after the terminal 19 is inserted.

また、少なくとも外部端子接続部材１８の内壁にプリフラックスを塗布することで、次のような効果を発揮する。プリフラックスは、表面処理コーティングで、露出した銅表面やその他の基板表面が、部品搭載前に酸化してしまうことを防ぐものである。外部端子接続部材１８の内壁の酸化を抑えるため、プレスフィット型の外部端子１９の外部端子接続部材１８の内壁への反発力が少なくても、プレスフィット型の外部端子１９と外部端子接続部材１８の接触抵抗を低く保つことが可能である。   Moreover, the following effects are exhibited by applying preflux at least to the inner wall of the external terminal connecting member 18. Preflux is a surface treatment coating that prevents exposed copper surfaces and other substrate surfaces from oxidizing prior to component mounting. In order to suppress the oxidation of the inner wall of the external terminal connecting member 18, the press-fit type external terminal 19 and the external terminal connecting member 18 are not affected even if the repulsive force of the press-fit type external terminal 19 on the inner wall of the external terminal connecting member 18 is small. The contact resistance can be kept low.

また、少なくとも外部端子接続部材１８の内壁に錫、金、ニッケルなどのめっきを施すことで次のような効果を発揮する。錫やニッケルの場合は、プレスフィット型の外部端子１９の挿入時に錫が削れて、外部端子接続部材１８の新生面とプレスフィット型の外部端子１９とが接触し、接触抵抗を低く抑えることができる。また、金めっきの場合は酸化しないため、金めっき自体は削れても削れなくても外部端子接続部材１８とプレスフィット型の外部端子１９の接触抵抗を低く抑えることができる。また、プレスフィット型の外部端子１９の圧接部と外部端子接続部材１８の内壁とが固相拡散接合されるため、低接触抵抗で高信頼な接続部を得ることができる。   Moreover, the following effects are exhibited by plating at least the inner wall of the external terminal connecting member 18 with tin, gold, nickel or the like. In the case of tin or nickel, the tin is scraped when the press-fit type external terminal 19 is inserted, the new surface of the external terminal connection member 18 and the press-fit type external terminal 19 come into contact, and the contact resistance can be kept low. . Further, since gold plating is not oxidized, the contact resistance between the external terminal connecting member 18 and the press-fit type external terminal 19 can be kept low even if the gold plating itself is cut or not cut. Further, since the press-fit portion of the press-fit type external terminal 19 and the inner wall of the external terminal connection member 18 are solid phase diffusion bonded, a highly reliable connection portion with low contact resistance can be obtained.

また、外部端子接続部材１８の内壁のみに前記めっきを施し、外部端子接続部材１８の外壁はめっきを施さない構成において、次の効果を発揮する。外部端子接続部材１８の内壁にはプレスフィット型の外部端子１９を挿入して接続する際に、上述しためっきを施す効果により、銅あるいはめっきの新生面とプレスフィット型の外部端子１９が接触し、接触抵抗が低くなる。さらに、外部端子接続部材１８の外壁は、めっきが施さない銅ベアであるため、トランスファーモールド形成する際に、モールド樹脂との密着性が高くなるという効果がある。そのため、プレスフィット接続およびモールド樹脂界面が高信頼となり、結果として電力用半導体装置１全体が高信頼となる。   Moreover, the following effects are exhibited in a configuration in which only the inner wall of the external terminal connecting member 18 is plated and the outer wall of the external terminal connecting member 18 is not plated. When inserting and connecting a press-fit type external terminal 19 to the inner wall of the external terminal connecting member 18, due to the effect of applying the plating described above, the new surface of copper or plating contacts the press-fit type external terminal 19, Contact resistance is lowered. Furthermore, since the outer wall of the external terminal connecting member 18 is a copper bear that is not subjected to plating, there is an effect that adhesion to the mold resin is enhanced when forming a transfer mold. Therefore, the press-fit connection and the mold resin interface are highly reliable, and as a result, the entire power semiconductor device 1 is highly reliable.

なお、プレスフィット型の外部端子１９として、内部接続部１９ａのみニードルアイ形状等のプレスフィット形状である例で説明したが、外部端子接続部材１８の外部接続部１９ｂもプレスフィット形状であっても構わない。図１３は、実施の形態２による他の外部端子の正面図及び側面図である。図１３（ａ）は正面図であり、図１３（ｂ）は側面図である。プレスフィット形状の外部接続部１９ｂは、ユーザーがプリント基板に挿入した際に、プリント基板のスルーホール内壁と接続するために形成される。これは、外部接続部１９ｂも半田を使用せずに接続したいという要求が高まっていることに対応するためである。一般に、電力用半導体装置１は熱容量が大きく、プリント基板に半田付けする際に大きな熱量が必要である。このため、半田付け時間が長くなったり、半田付け温度を高くしたりしなければならないので、プリント基板上のほかの部品などに影響を与える可能性がある。しかし、接続箇所に外部端子を挿入し接続するプレスフィットは、ハンドプレスなどで簡単に接続箇所に挿入が可能であり、半田付けによる上記影響を排除することができる。   In addition, although the example in which only the internal connection portion 19a has a press-fit shape such as a needle eye shape has been described as the press-fit type external terminal 19, the external connection portion 19b of the external terminal connection member 18 may also have a press-fit shape. I do not care. FIG. 13 is a front view and a side view of another external terminal according to the second embodiment. FIG. 13A is a front view, and FIG. 13B is a side view. The press-fit external connection portion 19b is formed to connect to the inner wall of the through hole of the printed circuit board when the user inserts it into the printed circuit board. This is to meet the increasing demand for the external connection portion 19b to be connected without using solder. Generally, the power semiconductor device 1 has a large heat capacity, and requires a large amount of heat when soldering to a printed circuit board. For this reason, the soldering time must be increased or the soldering temperature must be increased, which may affect other components on the printed circuit board. However, the press-fit in which the external terminal is inserted and connected to the connection location can be easily inserted into the connection location by a hand press or the like, and the above-mentioned influence due to soldering can be eliminated.

また、外部端子１９としては、プレスフィット型の外部端子１９だけではなく、図１４に示すような角型の角ピンなど、挿入可能な端子であればよい。図１４は、実施の形態２による更に他の外部端子の斜視図である。この外部端子２２の場合でも、半田付けすることなく、外部端子２２を外部端子接続部材１８の貫通孔４１に挿入することにより、外部端子２２と外部端子接続部材１８とを接続することができる。   Further, the external terminal 19 may be an insertable terminal such as a square-shaped square pin as shown in FIG. 14 as well as the press-fit type external terminal 19. FIG. 14 is a perspective view of still another external terminal according to the second embodiment. Even in the case of the external terminal 22, the external terminal 22 and the external terminal connection member 18 can be connected by inserting the external terminal 22 into the through hole 41 of the external terminal connection member 18 without soldering.

今まで、外部端子接続部材１８が長軸方向に貫通した貫通孔４１を有する例で説明したが、プレスフィット型の外部端子１９や挿入可能な外部端子２２を挿入する孔は貫通孔でなくてもよく、外部端子接続部材１８は、長軸方向の導電体１３に接続されない側に孔を有するものや、長軸方向の両側に孔を有するものでも構わない。   Up to now, the external terminal connecting member 18 has been described as an example having the through hole 41 penetrating in the long axis direction. However, the hole for inserting the press-fit type external terminal 19 and the insertable external terminal 22 is not a through hole. Alternatively, the external terminal connection member 18 may have a hole on the side not connected to the conductor 13 in the long axis direction or a hole on both sides in the long axis direction.

実施の形態２の電力用半導体装置１は、実施の形態１と同様に、特許文献１の接触要素のような複雑な形状のへりを設けることなく、外部端子接続部材１８を半導体素子１４、１５に接続された導電体１３に高い位置精度で接続でき、外部端子１９、２２を電力用半導体装置１の上面から接続でき、電力用半導体装置１を小型にすることができる。   Similarly to the first embodiment, the power semiconductor device 1 according to the second embodiment has the external terminal connecting member 18 connected to the semiconductor elements 14 and 15 without providing a lip having a complicated shape like the contact element disclosed in Patent Document 1. Can be connected with high positional accuracy, and the external terminals 19 and 22 can be connected from the upper surface of the power semiconductor device 1, thereby reducing the size of the power semiconductor device 1.

実施の形態３．
図１５は、本発明の実施の形態３による電力用半導体装置の断面図である。図１６は、導電体における外部端子接続部材の配置部の断面図である。実施の形態３の電力用半導体装置１は、実施の形態２の電力用半導体装置１とは、導電体１３の配置部が突起部３０を有する形状である点で異なる。 Embodiment 3 FIG.
FIG. 15 is a sectional view of a power semiconductor device according to the third embodiment of the present invention. FIG. 16 is a cross-sectional view of the arrangement portion of the external terminal connecting member in the conductor. The power semiconductor device 1 according to the third embodiment is different from the power semiconductor device 1 according to the second embodiment in that the arrangement portion of the conductor 13 has a shape having a protrusion 30.

貫通孔４１を有する外部端子接続部材１８の場合は、実施の形態１に示した導電体１３の配置部に窪み１７がなくても、突起部３０を有することで外部端子接続部材１８の内壁の変位を抑えることができる。突起部３０は、外部端子接続部材１８の内壁の内径と同じか０．１ｍｍ程度小さい外形の突起を有する。外部端子接続部材１８は、貫通孔４１が突起部３０に挿入されるように導電体１３に搭載される。突起部３０が外部端子接続部材１８の内壁に接触することにより、外部端子接続部材１８の内壁の移動を抑えるので、導電体１３上に外部端子接続部材１８を許容範囲内に位置決めすることができる。このような突起部３０を有する導電体１３は、導電体１３がリードフレームである場合に、プレス加工により簡単に作製が可能である。また、リードフレームに限らず絶縁層２４上に広範囲に形成した導電体層をエッチングする場合は、導電体１３における突起以外の箇所をハーフエッチすること（底面が残るようにエッチングを行うこと）により、突起部３０を有する導電体１３を形成することができる。   In the case of the external terminal connection member 18 having the through-hole 41, the protrusions 30 are provided on the inner wall of the external terminal connection member 18 even if the conductor 13 shown in Embodiment 1 has no recess 17 in the arrangement portion. Displacement can be suppressed. The protrusion 30 has a protrusion having an outer shape that is the same as the inner diameter of the inner wall of the external terminal connecting member 18 or about 0.1 mm. The external terminal connection member 18 is mounted on the conductor 13 such that the through hole 41 is inserted into the protrusion 30. Since the protrusion 30 comes into contact with the inner wall of the external terminal connecting member 18, the movement of the inner wall of the external terminal connecting member 18 is suppressed, so that the external terminal connecting member 18 can be positioned on the conductor 13 within an allowable range. . When the conductor 13 is a lead frame, the conductor 13 having such a protrusion 30 can be easily manufactured by pressing. In addition, when etching a conductor layer formed over a wide range, not limited to the lead frame, by half-etching portions other than the protrusions on the conductor 13 (etching so that the bottom surface remains). The conductor 13 having the protrusion 30 can be formed.

また、加工の影響により突起部３０の底面に若干の丸みが生じても、外部端子接続部材１８の内部にテーパー部２９がついていることで、外部端子接続部材１８は丸み（Ｒ部）を逃げるため、外部端子接続部材１８に傾きが生じることなく半田付けが可能である。   Even if the bottom surface of the protrusion 30 is slightly rounded due to the influence of processing, the external terminal connection member 18 escapes the roundness (R portion) due to the tapered portion 29 inside the external terminal connection member 18. Therefore, soldering is possible without causing the external terminal connecting member 18 to be inclined.

また、突起部３０の突起形状は、図１７に示すように、突起上部に突出部２８を有するものでもよい。図１７は導電体における他の外部端子接続部材の配置部の断面図である。突起部３０の上部に突出部２８を設けることで、外部端子接続部材１８を絶縁基板２３に搭載する際に、外部端子接続部材１８が水平方向に動こうとしたときに、突出部２８がそれを抑えることができる。このため、粘性を持つペースト半田だけでなく、ボール半田などが使用可能となり、様々な半田形態に対応が可能となる。   Further, as shown in FIG. 17, the protrusion shape of the protrusion 30 may be a protrusion having a protrusion 28 on the protrusion. FIG. 17 is a cross-sectional view of an arrangement portion of another external terminal connecting member in the conductor. By providing the protrusion 28 on the upper portion of the protrusion 30, when the external terminal connection member 18 is mounted on the insulating substrate 23, when the external terminal connection member 18 tries to move in the horizontal direction, the protrusion 28 Can be suppressed. For this reason, not only paste solder having viscosity but also ball solder can be used, and various solder forms can be dealt with.

今まで、外部端子接続部材１８が長軸方向に貫通した貫通孔４１を有する例で説明したが、プレスフィット型の外部端子１９や挿入可能な外部端子２２を挿入する孔及び突起部３０に挿入する孔は貫通孔でなくてもよく、長軸方向の両側に孔を有するものでも構わない。   Up to now, the example in which the external terminal connecting member 18 has the through-hole 41 penetrating in the long axis direction has been described, but the press-fit type external terminal 19 and the insertable external terminal 22 are inserted into the hole and the protrusion 30. The hole to be formed may not be a through hole, and may have holes on both sides in the long axis direction.

実施の形態３の電力用半導体装置１は、実施の形態１及び２と同様に、特許文献１の接触要素のような複雑な形状のへりを設けることなく、外部端子接続部材１８を半導体素子１４、１５に接続された導電体１３に高い位置精度で接続でき、外部端子１９、２２を電力用半導体装置１の上面から接続でき、電力用半導体装置１を小型にすることができる。   As in the first and second embodiments, the power semiconductor device 1 according to the third embodiment has the external terminal connection member 18 connected to the semiconductor element 14 without providing a lip having a complicated shape as in the contact element disclosed in Patent Document 1. , 15 can be connected with high positional accuracy, the external terminals 19 and 22 can be connected from the upper surface of the power semiconductor device 1, and the power semiconductor device 1 can be reduced in size.

実施の形態４．
図１８は本発明の実施の形態４による絶縁基板の断面図であり、図１９は外部端子接続部材の配置部の断面拡大図である。絶縁基板２３の導電体１３には、外部端子接続部材１８の断面と同形状の溝、すなわち環状溝３１が形成されている。この環状溝３１は、導電体１３における外部端子接続部材１８の配置部である。環状溝３１の外径は、外部端子接続部材１８の外径よりもやや大きく形成されており、環状溝３１の内径は外部端子接続部材１８の内径よりもやや小さく形成されている。 Embodiment 4 FIG.
18 is a cross-sectional view of an insulating substrate according to Embodiment 4 of the present invention, and FIG. 19 is an enlarged cross-sectional view of an arrangement portion of an external terminal connection member. A groove having the same shape as the cross section of the external terminal connecting member 18, that is, an annular groove 31 is formed in the conductor 13 of the insulating substrate 23. The annular groove 31 is an arrangement portion of the external terminal connection member 18 in the conductor 13. The outer diameter of the annular groove 31 is slightly larger than the outer diameter of the external terminal connection member 18, and the inner diameter of the annular groove 31 is slightly smaller than the inner diameter of the external terminal connection member 18.

環状溝３１を挟んで外側の導電体１３の高さと、内側の導電体１３の高さが同一になっている場合を考える。このような導電体１３の構造は、エッチングでもリードフレームのプレスでも可能である。   Consider the case where the height of the outer conductor 13 and the height of the inner conductor 13 are the same across the annular groove 31. Such a structure of the conductor 13 is possible by either etching or lead frame pressing.

半田は、環状溝３１の内側に供給する構成である。このようにすることで、半田供給時に、メタルマスクを使用した半田印刷を容易に行うことができる。半田印刷とは、１００〜３００μｍ程度の金属板に半田塗布部に穴を開けたメタルマスクを用い、印刷機のスキージを使って半田を印刷することである。シリンジを用いたディスペンス方式などと比較して、半田印刷方式はタクトタイムが大幅に減少することが特徴である。ディスペンス方式では半田付け箇所ごとに半田を塗布するのに対して、半田印刷方式では、半田付け形状に穴の開いたマスクを用いて基板パターン上の全ての半田付け箇所に一括で半田を供給することが可能である。メタルマスクを用いるため、導電体１３の高さが同じである場合に最も容易に実施することができる。なお、環状溝３１を挟んで外側の導電体１３の高さと、内側の導電体１３の高さが同一になっていない場合にも、半田印刷方式は適用できる。   The solder is configured to be supplied to the inside of the annular groove 31. By doing in this way, the solder printing using a metal mask can be performed easily at the time of solder supply. Solder printing is to print a solder using a squeegee of a printing machine using a metal mask having a hole in the solder application part on a metal plate of about 100 to 300 μm. Compared to the dispensing method using a syringe, the solder printing method is characterized in that the tact time is significantly reduced. In the dispensing method, solder is applied to each soldering location, whereas in the solder printing method, solder is supplied to all the soldering locations on the substrate pattern using a mask having a hole in the soldering shape. It is possible. Since a metal mask is used, it can be most easily implemented when the height of the conductor 13 is the same. The solder printing method can also be applied when the height of the outer conductor 13 and the height of the inner conductor 13 are not the same across the annular groove 31.

外部端子接続部材１８は、環状溝３１に配置され、半田付けが行われる。図２０は実施の形態４による外部端子接続部材の半田付け前の図であり、図２１は実施の形態４による外部端子接続部材の半田付け後の図である。図２０に示すように、導電体１３における環状溝３１に囲まれた内側部に半田２６を印刷する。このため、半田付け後に半田付けされるのは外部端子接続部材１８の内壁である。したがって、半田付け後は図２１に示すように、外部端子接続部材１８の底面には半田付けされない構造となる。本構造では、外部端子接続部材１８の底面に半田粒子が入り込まないため、半田粒子入り込みによる外部端子接続部材１８の傾きを抑制することができる。外部端子接続部材１８の内壁と環状溝３１の溝内壁に多少の隙間があっても、溶融した半田の表面張力により外部端子接続部材１８の底面に半田粒子が入り込むことはない。   The external terminal connecting member 18 is disposed in the annular groove 31 and soldered. 20 is a diagram before soldering of the external terminal connection member according to the fourth embodiment, and FIG. 21 is a diagram after soldering of the external terminal connection member according to the fourth embodiment. As shown in FIG. 20, the solder 26 is printed on the inner side of the conductor 13 surrounded by the annular groove 31. For this reason, what is soldered after soldering is the inner wall of the external terminal connecting member 18. Therefore, after soldering, as shown in FIG. 21, the external terminal connection member 18 is not soldered to the bottom surface. In this structure, since solder particles do not enter the bottom surface of the external terminal connection member 18, the inclination of the external terminal connection member 18 due to entry of the solder particles can be suppressed. Even if there is a slight gap between the inner wall of the external terminal connection member 18 and the groove inner wall of the annular groove 31, solder particles do not enter the bottom surface of the external terminal connection member 18 due to the surface tension of the molten solder.

また、環状溝３１を断面形状が図２２のようにテーパーがついているテーパー溝３２とすることで以下のような効果を発揮する。なお、テーパーについてはプレスにより加工することが望ましい。図２２は、実施の形態４による他の外部端子接続部材の配置部の断面拡大図である。   Further, by forming the annular groove 31 as a tapered groove 32 having a tapered cross section as shown in FIG. 22, the following effects are exhibited. The taper is preferably processed by pressing. FIG. 22 is an enlarged cross-sectional view of another arrangement portion of the external terminal connecting member according to the fourth embodiment.

テーパーがガイドとなり、外部端子接続部材１８をずらして搭載した場合でも、下方向に微小な力をかければ、外部端子接続部材１８は適正位置へと移動するので、外部端子接続部材１８の搭載装置を高精度にしなくてもよい。外部端子接続部材１８をずらして搭載した場合でも、下方向に微小な力をかければ、外部端子接続部材１８は適正位置へと移動するので、半田付け後の位置は許容範囲内となり、外部端子接続部材１６を許容範囲内に位置決めすることが可能である。   Even when the taper serves as a guide and the external terminal connecting member 18 is shifted and mounted, the external terminal connecting member 18 moves to an appropriate position if a small force is applied downward. Need not be highly accurate. Even when the external terminal connection member 18 is mounted with a shift, if a small force is applied downward, the external terminal connection member 18 moves to an appropriate position, so that the position after soldering is within an allowable range, and the external terminal It is possible to position the connecting member 16 within an allowable range.

例えば、外部端子接続部材１８を搭載装置等により搭載した後に、外部端子接続部材１８の上から加圧力、例えば、外部端子接続部材１８に対してした方向に均一に数十グラムくらいの力をかけたり、外部端子接続部材１８の内部に濡れあがる半田の濡れ力がかかったりすることで、外部端子接続部材１８が適正位置へと移動する。この効果を最も発揮するのは、外部端子接続部材１８の下部テーパー角度とテーパー溝３２のテーパー角度が同じで、かつ、溝の最も深いところの直径よりも外部端子接続部材１８の外周の直径が小さい場合である。この場合に、下方向に微小な力を均一に加えることで、外部端子接続部材１８の下部のテーパー部２９とテーパー溝３２の内周側テーパー（傾斜面）が広い面積で当接するように移動することができ、適正位置に移動する効果が高くなる。   For example, after mounting the external terminal connection member 18 with a mounting device or the like, a pressure of, for example, several tens of grams is applied uniformly from above the external terminal connection member 18 in the direction applied to the external terminal connection member 18. The external terminal connection member 18 moves to an appropriate position by applying a wetting force of solder that gets wet inside the external terminal connection member 18. This effect is most exhibited when the lower taper angle of the external terminal connection member 18 and the taper angle of the taper groove 32 are the same, and the outer peripheral diameter of the external terminal connection member 18 is larger than the deepest diameter of the groove. This is the case. In this case, by applying a small force uniformly in the downward direction, the taper portion 29 at the lower part of the external terminal connecting member 18 and the inner peripheral side taper (inclined surface) of the taper groove 32 move so as to contact each other over a wide area. And the effect of moving to an appropriate position is enhanced.

また、外部端子接続部材１８の内部に濡れあがる半田の濡れ力がかかることで、外部端子接続部材１８が適正位置へと移動する。通常、半田の濡れ力により１００μｍ程度は外部端子接続部材１８が動く。その濡れ力の作用とテーパー溝３２のテーパーの作用がともに作用して、外部端子接続部材１８が適正位置へと移動する。特に外部端子接続部材１８の下部テーパー角度とテーパー溝３２のテーパー角度が同じときに大きく効果が得られる。   Moreover, the external terminal connection member 18 moves to an appropriate position by applying the wetting force of the solder that gets wet inside the external terminal connection member 18. Usually, the external terminal connecting member 18 moves about 100 μm by the wetting force of the solder. The action of the wetting force and the action of the taper of the taper groove 32 act together, and the external terminal connecting member 18 moves to an appropriate position. In particular, a great effect can be obtained when the lower taper angle of the external terminal connecting member 18 and the taper angle of the taper groove 32 are the same.

また、外部端子接続部材１８をラフに搭載し、下方向に力を与えないた場合でも、半田付け前に超音波振動を与えることで、外部端子接続部材１８はテーパー溝３２のガイドに沿って、適正位置へと移動する。特に、テーパー溝３２のテーパー角度と外部端子接続部材１８の下部テーパー角度が同じときに、超音波振動を加えた場合に適正位置に移動できる。なお、初期の搭載位置が、テーパー溝３２から外側に外れている場合は適正位置に移動できないので、少なくとも外部端子接続部材１８の下部がテーパー内に入り込むように外部端子接続部材１８を搭載する。   Further, even when the external terminal connection member 18 is roughly mounted and no force is applied in the downward direction, the external terminal connection member 18 follows the guide of the tapered groove 32 by applying ultrasonic vibration before soldering. Move to the proper position. In particular, when ultrasonic vibration is applied when the taper angle of the taper groove 32 and the lower taper angle of the external terminal connection member 18 are the same, the taper groove 32 can move to an appropriate position. When the initial mounting position is outside the tapered groove 32, the external terminal connecting member 18 is mounted so that at least the lower portion of the external terminal connecting member 18 enters the taper.

半田溶融中に超音波振動を与えることで、上記効果に加え、半田２６が外部端子接続部材１８の内壁へ均一に拡がることを補助する効果を発揮する。   By applying ultrasonic vibration during solder melting, in addition to the above effects, the effect of assisting the solder 26 to spread uniformly to the inner wall of the external terminal connecting member 18 is exhibited.

さらに、テーパーを設けることで、図２３に示すように、外部端子接続部材１８の下に余裕空間４５が出きるため、半田２６が外部端子接続部材１８の下に入り込んだとしても、この入り込んだ半田２６は余裕空間４５に入り、外部端子接続部材１８に許容範囲を超えた傾きが生じること無く外部端子接続部材１８の半田付けが可能となる。図２３は、図２２の配置部における外部端子接続部材の半田付け前の図である。詳しく説明する。導電体１３に環状溝３１やテーパー溝３２が無い場合、外部端子接続部材１８と導電体１３の表面との隙間に半田が入り込むことがあり、その影響で外部端子接続部材が傾くことがある。例えば外部端子接続部材１８の左側のみに半田２６が入り込むことがあり、このような場合に外部端子接続部材１８は右側に傾く。しかしながら、テーパー溝３２を有する構成は、外部端子接続部材１８の下に余裕空間４５があるので、その余裕空間４５に半田が入り込こむことで、大量でない適正量の半田を使わないように制御されている場合に、外部端子接続部材１８が許容範囲を超えて傾かないようにすることができる。したがって、テーパー溝３２を有する構成は、プレスフィット型の外部端子１９を外部端子接続部材１８の貫通孔４１に所定の姿勢となるように挿入することが容易にできる。   Further, by providing a taper, as shown in FIG. 23, a marginal space 45 appears under the external terminal connection member 18, so that even if the solder 26 enters under the external terminal connection member 18, this entry has occurred. The solder 26 enters the marginal space 45, and the external terminal connection member 18 can be soldered without causing the external terminal connection member 18 to tilt beyond the allowable range. FIG. 23 is a diagram of the external terminal connection member before soldering in the arrangement portion of FIG. explain in detail. When the conductor 13 does not have the annular groove 31 or the tapered groove 32, the solder may enter the gap between the external terminal connection member 18 and the surface of the conductor 13, and the external terminal connection member may be inclined due to the influence. For example, the solder 26 may enter only the left side of the external terminal connection member 18. In such a case, the external terminal connection member 18 is inclined to the right side. However, the configuration having the tapered groove 32 has a marginal space 45 under the external terminal connection member 18, so that solder enters the marginal space 45 so that an appropriate amount of solder that is not a large amount is not used. In this case, the external terminal connecting member 18 can be prevented from tilting beyond an allowable range. Therefore, the configuration having the tapered groove 32 can easily insert the press-fit type external terminal 19 into the through hole 41 of the external terminal connecting member 18 so as to have a predetermined posture.

さらに、外部端子接続部材１８の外側に位置するテーパー溝３２のテーパー部に、モールド樹脂１１が入り込むことで、導電体１３とモールド樹脂の密着性が上がる。外部端子接続部材１８と半田２６との接合部や、導電体１３と半田２６との接合部は、温度サイクルなどにおいて、線膨張係数のミスマッチにより応力集中する箇所であるが、モールド樹脂１１が、テーパー溝３２に入り込むことで、密着力が上がり、電力用半導体装置１は高信頼となる。   Further, the mold resin 11 enters the taper portion of the taper groove 32 located outside the external terminal connection member 18, thereby improving the adhesion between the conductor 13 and the mold resin. The joint between the external terminal connecting member 18 and the solder 26 and the joint between the conductor 13 and the solder 26 are places where stress is concentrated due to mismatch of the linear expansion coefficient in a temperature cycle or the like. By entering the taper groove 32, the adhesion strength is increased, and the power semiconductor device 1 is highly reliable.

今まで、外部端子接続部材１８が長軸方向に貫通した貫通孔４１を有する例で説明したが、プレスフィット型の外部端子１９や挿入可能な外部端子２２を挿入する孔及び突起部３０に挿入する孔は貫通孔でなくてもよく、長軸方向の両側に孔を有するものでも構わな
い。 Up to now, the example in which the external terminal connecting member 18 has the through-hole 41 penetrating in the long axis direction has been described, but the press-fit type external terminal 19 and the insertable external terminal 22 are inserted into the hole and the protrusion 30. The hole to be formed may not be a through hole, and may have holes on both sides in the long axis direction.

実施の形態４の電力用半導体装置１は、実施の形態１乃至３と同様に、特許文献１の接触要素のような複雑な形状のへりを設けることなく、外部端子接続部材１８を半導体素子１４、１５に接続された導電体１３に高い位置精度で接続でき、外部端子１９、２２を電力用半導体装置１の上面から接続でき、電力用半導体装置１を小型にすることができる。   The power semiconductor device 1 according to the fourth embodiment is similar to the first to third embodiments in that the external terminal connection member 18 is connected to the semiconductor element 14 without providing a lip having a complicated shape like the contact element disclosed in Patent Document 1. , 15 can be connected with high positional accuracy, the external terminals 19 and 22 can be connected from the upper surface of the power semiconductor device 1, and the power semiconductor device 1 can be reduced in size.

なお、本発明は、矛盾のない範囲内において、各実施の形態の内容を自由に組み合わせたり、各実施の形態を適宜、変形、省略したりすることが可能である。   In the present invention, it is possible to freely combine the contents of the respective embodiments within a consistent range, and to appropriately modify and omit the respective embodiments.

１…電力用半導体装置、１１…モールド樹脂、１３…導電体、１４…半導体素子、１５…半導体素子、１６…外部端子接続部材、１７…窪み、１８…外部端子接続部材、２４…絶縁層、２５…ベース板、２７…スリット、２８…突出部、２９…テーパー部、３０…突起部、３１…環状溝、３２…テーパー溝、４１…貫通孔。 DESCRIPTION OF SYMBOLS 1 ... Power semiconductor device, 11 ... Mold resin, 13 ... Conductor, 14 ... Semiconductor element, 15 ... Semiconductor element, 16 ... External terminal connection member, 17 ... Depression, 18 ... External terminal connection member, 24 ... Insulating layer, 25 ... Base plate, 27 ... Slit, 28 ... Projection, 29 ... Taper, 30 ... Projection, 31 ... Circular groove, 32 ... Tapered groove, 41 ... Through-hole.

Claims (16)

半導体素子と、前記半導体素子が接続された導電体と、前記導電体に絶縁層を介して配置されたベース板と、前記導電体に接続された柱状の外部端子接続部材と、を備えた電力用半導体装置であって、
前記導電体は、前記絶縁層と逆側の面に前記外部端子接続部材を所定の許容範囲内に位置決めする配置部を有し、
前記外部端子接続部材は、前記配置部に搭載されたことを特徴とする電力用半導体装置。 An electric power comprising: a semiconductor element; a conductor to which the semiconductor element is connected; a base plate disposed on the conductor via an insulating layer; and a columnar external terminal connecting member connected to the conductor. A semiconductor device,
The conductor has an arrangement part for positioning the external terminal connecting member within a predetermined tolerance on a surface opposite to the insulating layer,
The power semiconductor device is characterized in that the external terminal connecting member is mounted on the arrangement portion. 前記導電体の配置部は窪みを有し、
前記外部端子接続部材は、前記窪みに搭載されたことを特徴とする請求項１記載の電力用半導体装置。 The arrangement portion of the conductor has a depression,
The power semiconductor device according to claim 1, wherein the external terminal connection member is mounted in the recess. 前記導電体は、前記窪みから延伸したスリットを有することを特徴とする請求項２記載の電力用半導体装置。   The power semiconductor device according to claim 2, wherein the conductor has a slit extending from the recess. 前記外部端子接続部材は、長軸方向の一端側に孔を有し、
前記導電体の配置部は突起部を有し、
前記外部端子接続部材は、前記孔が前記突起部に挿入されるように前記導電体に搭載されたことを特徴とする請求項１記載の電力用半導体装置。 The external terminal connecting member has a hole on one end side in the major axis direction,
The arrangement portion of the conductor has a protrusion,
The power semiconductor device according to claim 1, wherein the external terminal connection member is mounted on the conductor so that the hole is inserted into the protrusion. 前記導電体は、前記突起部の外周に突出部を有することを特徴とする請求項４記載の電力用半導体装置。   The power semiconductor device according to claim 4, wherein the conductor has a protrusion on an outer periphery of the protrusion. 前記外部端子接続部材は、長軸方向の一端側に孔を有し、
前記導電体の配置部は環状溝を有し、
前記外部端子接続部材は、外壁と前記孔の内面により形成された外周壁部が前記環状溝に搭載されたことを特徴とする請求項１記載の電力用半導体装置。 The external terminal connecting member has a hole on one end side in the major axis direction,
The arrangement portion of the conductor has an annular groove,
2. The power semiconductor device according to claim 1, wherein the external terminal connecting member has an outer peripheral wall portion formed by an outer wall and an inner surface of the hole mounted in the annular groove. 前記外部端子接続部材は、前記環状溝に搭載される側の前記外周壁部にテーパー部が設けられたことを特徴とする請求項６記載の電力用半導体装置。   The power semiconductor device according to claim 6, wherein the external terminal connecting member is provided with a tapered portion on the outer peripheral wall portion on the side mounted in the annular groove. 前記導電体の環状溝は、外周側及び内周側にテーパーが形成されたテーパー溝であることを特徴とする請求項７記載の電力用半導体装置。   8. The power semiconductor device according to claim 7, wherein the annular groove of the conductor is a tapered groove having a taper formed on an outer peripheral side and an inner peripheral side. 前記外部端子接続部材は、長軸方向の前記導電体に接続されない側に孔を有することを特徴とする請求項１乃至３のいずれか１項に記載の電力用半導体装置。   4. The power semiconductor device according to claim 1, wherein the external terminal connection member has a hole on a side not connected to the conductor in the long axis direction. 5. 前記外部端子接続部材は、長軸方向の両側に孔を有することを特徴とする請求項１乃至８のいずれか１項に記載の電力用半導体装置。   The power semiconductor device according to claim 1, wherein the external terminal connection member has holes on both sides in the long axis direction. 前記外部端子接続部材は、長軸方向に貫通した孔を有することを特徴とする請求項１乃至８のいずれか１項に記載の電力用半導体装置。   9. The power semiconductor device according to claim 1, wherein the external terminal connecting member has a hole penetrating in the long axis direction. 10. 前記外部端子接続部材は、前記孔のうち外部端子が挿入される孔の内面に、錫、金、あるいはニッケルの層が形成されたことを特徴とする請求項９乃至１１のいずれか１項に記載の電力用半導体装置。   The said external terminal connection member has a layer of tin, gold | metal | money, or nickel formed in the inner surface of the hole in which an external terminal is inserted among the said holes, The any one of Claim 9 thru | or 11 characterized by the above-mentioned. The power semiconductor device described. 前記外部端子接続部材は、銅あるいは銅を含む材料にて構成されたことを特徴とする請求項１乃至１２のいずれか１項に記載の電力用半導体装置。   The power semiconductor device according to claim 1, wherein the external terminal connection member is made of copper or a material containing copper. 前記外部端子接続部材は、外形が円柱形状であり、
前記半導体素子と、前記導電体と、前記ベース板と、前記外部端子接続部材は、モールド樹脂で封止されたことを特徴とする請求項１乃至１３のいずれか１項に記載の電力用半導体装置。 The external terminal connecting member has a cylindrical outer shape,
The power semiconductor according to any one of claims 1 to 13, wherein the semiconductor element, the conductor, the base plate, and the external terminal connecting member are sealed with a molding resin. apparatus. 前記半導体素子は、ワイドバンドギャップ半導体材料により形成されていることを特徴とする請求項１乃至１４のいずれか１項に記載の半導体装置。   15. The semiconductor device according to claim 1, wherein the semiconductor element is made of a wide band gap semiconductor material. 前記ワイドバンドギャップ半導体材料は、炭化珪素、窒化ガリウム系材料、またはダイヤモンドのうちのいずれかであることを特徴とする請求項１５記載の半導体装置。   16. The semiconductor device according to claim 15, wherein the wide band gap semiconductor material is any one of silicon carbide, a gallium nitride-based material, and diamond.
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