JP2013062466A - Substrate processing apparatus and temperature control method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a temperature control method of the substrate processing apparatus, preventing troubles when controlling heat treatment by using a temperature sensor.SOLUTION: A substrate processing apparatus includes: first temperature detecting means using a first radiation thermometer; and second temperature detecting means for detecting a temperature by using a second radiation thermometer having a temperature measurement range in which an upper limit is higher than an upper limit of a temperature measurement range of the first radiation thermometer and a lower limit is higher than a lower limit of the temperature measurement range of the first radiation thermometer. The apparatus switches to the second temperature detecting means when a temperature detected by the first temperature detecting means exceeds a first threshold value, and switches to the first temperature detecting means when a temperature detected by the second temperature detecting means is lower than a second threshold value lower than the first threshold value, and switches control of heating means on the basis of the temperature detected by the first temperature detecting means or the second temperature detecting means, and the predetermined threshold values.

Description

  The present invention relates to a substrate processing apparatus for performing desired heat treatment by performing diffusion or CVD processing, and a temperature control method for the substrate processing apparatus.

  In the vertical thermal diffusion apparatus and the vertical reduced pressure CVD apparatus, for example, a substrate is accommodated in a heat treatment furnace in order to form a thin film on the treatment substrate, and the inside of the heat treatment furnace is heated by a predetermined heating means. In many cases, the temperature in the heat treatment furnace is detected by a temperature sensor installed in the heat treatment furnace, and the temperature is controlled according to the result.

  For example, Patent Document 1 discloses a semiconductor manufacturing apparatus that always controls the temperature by stable feedback control even when a disturbance due to rapid cooling occurs. In this semiconductor manufacturing apparatus, when the temperature raising step and the target temperature are maintained, a thermocouple (heater thermocouple) installed in the vicinity of the heater that heats the inside of the heat treatment furnace, and the soaking tube and the reaction tube inside the heat treatment furnace are provided. The temperature control by the cascade control loop is performed using the thermocouple (cascade thermocouple) installed in, and when the temperature of the heater is lowered, the temperature is controlled by switching to the direct control loop using only the cascade thermocouple.

Japanese Patent Laid-Open No. 2004-111984

  For example, when detecting the temperature in the heat treatment furnace using a radiation thermometer, the radiation thermometer measures the temperature of the object based on the wavelength, so the measurable temperature range is limited. Therefore, in order to realize a wide range of temperature measurement, a plurality of types of radiation thermometers such as a low-temperature radiation thermometer and a high-temperature radiation thermometer are required. However, when a plurality of types of radiation thermometers are switched and controlled depending on the temperature zone, there is a problem that the temperature measurement value at the time of switching and the temperature measurement value near the temperature at which switching is performed become unstable.

  In addition, for example, failure detection of a radiation thermometer is detected based on whether it is within the measurable range obtained from the radiation thermometer, but if there is a flaw only in the radiation thermometer setting parameters such as emissivity, the radiation temperature Since there is no failure in the meter itself, the measured value does not deviate from the measurable range.

  The objective of this invention is providing the temperature control method of the substrate processing apparatus which suppresses the malfunction at the time of controlling heat processing using a temperature sensor, and a substrate processing apparatus.

  In order to achieve the above object, a substrate processing apparatus according to the present invention detects a temperature heated by a heating unit that heats a processing chamber that accommodates a substrate and a first radiation thermometer. The temperature higher than the upper limit of the temperature range measured by the first temperature detection means and the first radiation thermometer is set as the upper limit of the temperature range to be measured, and is measured by the first radiation thermometer. A second temperature detecting means for detecting a temperature heated by the heating means using a second radiation thermometer having a temperature lower than the lower limit of the temperature range to be measured; and First control means for controlling the heating means based on the temperature detected by the first temperature detection means, and second control for controlling the heating means based on the temperature detected by the second temperature detection means Means and said When the temperature detected by the first temperature detecting means exceeds the first threshold, the temperature is switched to the second temperature detecting means, and the temperature detected by the second temperature detecting means is lower than the first threshold. When it falls below the second threshold value, it switches to the first temperature detection means, and based on the temperature detected by the first temperature detection means or the second temperature detection means and a predetermined threshold value, Control switching means for switching between control of the heating means by the first control means and control of the heating means by the second control means.

  In the temperature control method for a substrate processing apparatus according to the present invention, the processing chamber for storing the substrate is heated by the heating means, and the temperature heated by the heating means using the first radiation thermometer is set to the first temperature. The temperature detected by the detecting means and higher than the upper limit of the temperature range measured by the first radiation thermometer is set as the upper limit of the temperature range to be measured, and the temperature measured by the first radiation thermometer Using a second radiation thermometer having a temperature lower than the lower limit of the range as the lower limit of the temperature range to be measured, the temperature heated by the heating means is detected by the second temperature detecting means, and the first A first control for switching to the second temperature detection means when the temperature detected by the temperature detection means exceeds the first threshold, and the temperature detected by the second temperature detection means is the first temperature Second below the threshold of A second control for switching to the first temperature detection means when the threshold value is below, the temperature detected by the first temperature detection means or the second temperature detection means and a predetermined threshold value And switch based on.

  ADVANTAGE OF THE INVENTION According to this invention, the temperature control method of the substrate processing apparatus and substrate processing apparatus which suppress the malfunction at the time of controlling heat processing using a temperature sensor can be provided.

It is a perspective view which shows an example of the semiconductor manufacturing apparatus 300 which concerns on embodiment of this invention. (A) is side sectional drawing which shows an example of the processing furnace 328 which concerns on embodiment of this invention, (b) is side sectional drawing of the wafer 304 supported by the boat 320. As shown in FIG. It is principal part sectional drawing in the processing furnace 328 which concerns on embodiment of this invention. It is a schematic diagram which shows an example of the gas supply unit 380 of the semiconductor manufacturing apparatus 300 which concerns on embodiment of this invention. It is a schematic sectional drawing of processing furnace 328 and peripheral structure concerning an embodiment of the present invention. It is a block diagram which shows an example of the control structure of the semiconductor manufacturing apparatus 300 which concerns on embodiment of this invention. It is a figure which shows the switching process of the temperature control by the temperature control part 362. FIG. It is a figure which shows switching with the control by the radiation thermometer for high temperature, and the control by a low temperature radiation thermometer. It is a figure which shows an example of the failure detection of the radiation thermometer which concerns on embodiment of this invention.

DETAILED DESCRIPTION OF THE INVENTION A substrate processing apparatus for forming a SiC (silicon carbide) epitaxial film according to an embodiment of the present invention, and a substrate manufacturing method for forming a SiC epitaxial film, which is one of semiconductor device manufacturing methods, based on the drawings. explain.
FIG. 1 is a perspective view showing an example of a semiconductor manufacturing apparatus 300 for forming a SiC epitaxial film according to an embodiment of the present invention.

  A semiconductor manufacturing apparatus 300 as a substrate processing apparatus (film forming apparatus) is a batch type vertical heat treatment apparatus, and includes a housing 302 in which a main part is arranged. In the semiconductor manufacturing apparatus 300, for example, a hoop (hereinafter referred to as a pod) 306 is used as a wafer carrier as a substrate container for storing a wafer 304 (see FIG. 2 described later) as a substrate made of SiC or the like. . A pod stage 308 is disposed on the front side of the housing 302, and the pod 306 is conveyed to the pod stage 308. For example, 25 wafers 304 are stored in the pod 306 and set on the pod stage 308 with the lid closed.

  A pod transfer device 310 is disposed on the front side in the housing 302 and at a position facing the pod stage 308. A pod storage shelf 312, a pod opener 314, and a substrate number detector 316 are disposed in the vicinity of the pod transfer device 310. The pod storage shelf 312 is arranged above the pod opener 314 and is configured to hold a plurality of pods 306 mounted thereon. The substrate number detector 316 is disposed adjacent to the pod opener 314, and the pod transfer device 310 transfers the pod 306 among the pod stage 308, the pod storage shelf 312, and the pod opener 314. The pod opener 314 opens the lid of the pod 306, and the substrate number detector 316 detects the number of wafers 304 in the pod 306 with the lid opened.

  In the housing 302, a substrate transfer machine 318 and a boat 320 as a substrate holder are arranged. The substrate transfer machine 318 has an arm (tweezer) 322, and has a structure that can be moved up and down and rotated by a driving means (not shown). The arm 322 can take out, for example, five wafers 304, and the wafer 304 is transferred between the pod 306 and the boat 320 placed at the position of the pod opener 314 by moving the arm 322.

  The boat 320 is made of a heat-resistant material such as carbon graphite and SiC, for example, so that a plurality of wafers 304 are aligned in a horizontal posture and aligned with each other in the vertical direction, and stacked and held in the vertical direction. It is configured. A boat heat insulating portion 324 is disposed as a disk-shaped heat insulating member made of a heat resistant material such as quartz or SiC at the lower portion of the boat 320. It is configured such that heat is not easily transmitted to the lower side of the processing furnace 328 (see FIG. 2 described later).

  A processing furnace 328 is disposed on the upper back side in the housing 302. A boat 320 loaded with a plurality of wafers 304 is loaded into the processing furnace 328, and heat treatment is performed.

  Next, the processing furnace 328 of the semiconductor manufacturing apparatus 300 for forming a SiC epitaxial film will be described.

  2A is a side sectional view showing an example of the processing furnace 328 according to the embodiment of the present invention, and FIG. 2B is a side sectional view of the wafer 304 supported by the boat 320. FIG. 3 is a cross-sectional view of a main part in the processing furnace 328. FIG. 4 is a schematic diagram showing an example of the gas supply unit 380 connected to FIG.

  The processing furnace 328 is made of a heat resistant material such as quartz or SiC, and includes a reaction tube 344 formed in a cylindrical shape having a closed upper end and an opened lower end. A manifold 346 is disposed below the reaction tube 344 concentrically with the reaction tube 344. The manifold 346 is made of, for example, stainless steel and has a cylindrical shape with an upper end and a lower end opened. The manifold 346 is provided to support the reaction tube 344. An O-ring (not shown) as a seal member is provided between the manifold 346 and the reaction tube 344. The manifold 346 is supported by a holding body (not shown), so that the reaction tube 344 is installed vertically. A reaction vessel is formed by the reaction tube 344 and the manifold 346.

  The processing furnace 328 includes an object to be heated (derivative) 326 formed in a cylindrical shape whose upper end is closed and whose lower end is open, and an induction coil 348 as a magnetic field generation unit. A reaction chamber 350 is formed inside the reaction tube 344, and is configured to be able to store a boat 320 holding a wafer 304 as a substrate made of SiC or the like. The heated body 326 is heated by a magnetic field generated by an induction coil 348 provided outside the reaction tube 344. The heated body 326 generates heat, whereby the inside of the reaction chamber 350 is heated. It has become so.

  As shown in FIG. 2B, the wafer 304 may be held by the boat 320 in a state where the wafer 304 is held by the annular lower wafer holder 352b and the upper surface is covered by the disk-like upper wafer holder 352a. . Accordingly, the wafer 304 can be protected from particles falling from the upper part of the wafer, and film formation on the back surface side with respect to the film formation surface (the lower surface of the wafer 304) can be suppressed. Further, the film formation surface can be separated from the boat column by the amount of the wafer holder 352, and the influence of the boat column can be reduced. The boat 320 is configured to hold the wafers 304 held by the wafer holder 352 so as to be aligned in the vertical direction in a horizontal posture with the centers aligned.

  Further, a temperature sensor is provided in the vicinity of the body to be heated 326 as a temperature detector for detecting the temperature in a reaction chamber 350 described later. The induction coil 348 and the temperature sensor are electrically connected to the temperature control unit 362 (see FIG. 6 to be described later), and the degree of energization to the induction coil 348 is adjusted based on the temperature information detected by the temperature sensor. Thus, the temperature in the reaction chamber 350 is controlled to have a desired temperature distribution. As the temperature sensor, for example, radiation thermometers 354, 356, 358, and 360 are arranged in the vicinity of the body to be heated 326 and divided into three zones in the vertical direction.

  Between the reaction tube 344 and the heated body 326, a heat insulating material 372 made of, for example, a carbon felt that is difficult to be dielectric is provided. By providing the heat insulating material 372, the heat of the heated body 326 is transferred to the reaction tube 344. Alternatively, transmission to the outside of the reaction tube 344 can be suppressed.

  In addition, an outer heat insulating wall 374 having a water cooling structure, for example, is provided outside the induction coil 348 so as to prevent heat in the reaction chamber 350 from being transmitted to the outside so as to surround the reaction chamber 350. Further, a magnetic seal 376 that prevents the magnetic field generated by the induction coil 348 from leaking outside is provided outside the outer heat insulating wall 374.

  As shown in FIG. 2, there is at least one first gap between the heated body 326 and the wafer 304 for supplying at least a Si (silicon) atom-containing gas and a Cl (chlorine) atom-containing gas to the wafer 304. A first gas supply nozzle 332 in which one gas supply port 330 is formed is installed. In addition, at least one C (carbon) atom-containing gas and a reducing gas are supplied to the wafer 304 at a location different from the first gas supply nozzle 332 between the heated body 326 and the wafer 304. A second gas supply nozzle 336 in which two second gas supply ports 334 are formed is provided.

  The first gas supply nozzle 332 and the second gas supply nozzle 336 may be provided one by one. However, as shown in FIG. 3, three second gas supply nozzles 336 are provided, The first gas supply nozzle 332 is preferably provided so as to be sandwiched between the two gas supply nozzles 336. By alternately arranging in this way, mixing of the Si atom-containing gas and the C atom-containing gas can be promoted. Further, by using an odd number of the first gas supply nozzles and the second gas supply nozzles, it is possible to make the film formation gas supply symmetrical about the central second gas supply nozzle 336, so Can improve the uniformity.

The first gas supply nozzle 332 is made of, for example, carbon graphite and is provided in the reaction chamber 350. The first gas supply nozzle 332 is attached to the manifold 346 so as to penetrate the manifold 346. Here, when the SiC epitaxial film is formed, the first gas supply port 330 has at least a Si (silicon) atom-containing gas, for example, a monosilane (hereinafter referred to as SiH ₄ ) gas and a Cl (chlorine) atom-containing gas. As an example, hydrogen chloride (hereinafter referred to as HCl) gas and an inert gas (for example, Ar (argon)) as a carrier gas are supplied into the reaction chamber 350 via the first gas supply nozzle 332. ing.

The first gas supply nozzle 332 is connected to the gas supply unit 380 via the first gas line 378. As shown in FIG. 4, the first gas line 378 has valves 384c, 384d, and 384f for the SiH ₄ gas, HCl gas, and inert gas, respectively, and a mass flow controller (flow control means) as a flow controller (flow control means). For example, SiH ₄ gas supply source 386c, HCl gas supply source 386d, and inert gas supply source 386f are connected via 382c, 382d, and 382f.

With the above configuration, the supply flow rate, concentration, partial pressure, and supply timing of SiH ₄ gas, HCl gas, and inert gas can be controlled in the reaction chamber 350. The valves 384c, 384d, 384f, and MFC 382c, 382d, 382f are electrically connected to the gas flow rate control unit 388, and are controlled at predetermined timings so that the flow rate of the supplied gas becomes a predetermined flow rate. (See FIG. 6 described later). Note that SiH ₄ gas, HCl gas, and inert gas supply sources 386c, 386d, 386f, valves 384c, 384d, 384f, MFC 382c, 382d, 382f, first gas line 378, and first gas supply nozzle, respectively. A first gas supply system is configured as a gas supply system by the first gas supply port 330 provided in at least one of the 332 and the first gas supply nozzle 332.

The second gas supply nozzle 336 is made of, for example, carbon graphite and is provided in the reaction chamber 350. The second gas supply nozzle 336 is attached to the manifold 346 so as to penetrate the manifold 346. Here, when forming the SiC epitaxial film, the second gas supply port 334 uses at least C (carbon) atom-containing gas, for example, propane (hereinafter referred to as C ₃ H ₈ ) gas and reducing gas, for example, Hydrogen (single H atom or H ₂ molecule; hereinafter referred to as H ₂ ) gas is supplied into the reaction chamber 350 through the second gas supply nozzle 336.

The second gas supply nozzle 336 is connected to the gas supply unit 380 via the second gas line 390. Further, as shown in FIG. 4, the second gas line 390 is branched into, for example, gas pipes 213a and 213b, and the gas pipes 213a and 213b each have, for example, C ₃ H ₈ gas as a C (carbon) atom-containing gas. Is connected to a C ₃ H ₈ gas supply source 386a via a valve 384a and an MFC 382a as a flow rate control means, and as a reducing gas, for example, to H ₂ gas via a valve 384b and an MFC 382b as a flow rate control means. The H ₂ gas supply source 386b is connected.

With the above configuration, for example, the supply flow rate, concentration, and partial pressure of C ₃ H ₈ gas and H ₂ gas can be controlled in the reaction chamber 350. The valves 384a and 384b and the MFCs 382a and 382b are electrically connected to the gas flow rate control unit 388, and are controlled at a predetermined timing so that the supplied gas flow rate becomes a predetermined flow rate (see FIG. 6). It should be noted that gas supply sources 386a and 386b for C ₃ H ₈ gas and H ₂ gas, valves 384a and 384b, MFC 382a and 382b, a second gas line 390, a second gas supply nozzle 336, and a second gas supply port 334 Thus, a second gas supply system is configured as the gas supply system.

  Further, in each of the first gas supply nozzle 332 and the second gas supply nozzle 336, one first gas supply port 330 and one second gas supply port 334 are provided in the arrangement region of the wafer 304. Alternatively, a predetermined number of wafers 304 may be provided.

  As shown in FIGS. 2 and 3, the third gas supply port 340 is arranged between the reaction tube 344 and the heat insulating material 372 and attached so as to penetrate the manifold 346. The third gas supply port 340 is formed in the third gas line 400 that penetrates the manifold 346, and is connected to the gas supply source 386e via the valve 384e and the MFC 382e. For example, a rare gas Ar gas is supplied as an inert gas from the gas supply source 386e and contributes to the growth of the SiC epitaxial film, for example, a gas containing Si (silicon) atoms, a gas containing C (carbon) atoms, or Cl (chlorine). ) Atom-containing gas or mixed gas is prevented from entering between the reaction tube 344 and the heat insulating material 372, and unnecessary products are prevented from adhering to the inner wall of the reaction tube 344 or the outer wall of the heat insulating material 372. can do.

  As shown in FIG. 2A, the first gas exhaust port 338 is disposed between the heated body 326 and the wafer 304. Further, a second gas exhaust port 342 is disposed between the reaction tube 344 and the heat insulating material 372.

  The first gas exhaust port 338 is provided below the boat 320, and the manifold 346 is provided with a gas exhaust pipe 392 connected to the first gas exhaust port 338 passing therethrough. A vacuum exhaust device 396 such as a vacuum pump is connected to the downstream side of the gas exhaust pipe 392 via a pressure sensor (not shown) as a pressure detector and an APC (Auto Pressure Controller) valve 394 as a pressure regulator. . A pressure control unit 398 is electrically connected to the pressure sensor and the APC valve 394, and the pressure control unit 398 adjusts the opening degree of the APC valve 394 based on the pressure detected by the pressure sensor, and the processing furnace 328. It is configured to control at a predetermined timing so that the internal pressure becomes a predetermined pressure (see FIG. 6 described later).

  As described above, at least a Si (silicon) atom-containing gas and a Cl (chlorine) atom-containing gas are supplied from the first gas supply port 330, and at least a C (carbon) atom-containing gas is supplied from the second gas supply port 334. And the reducing gas are supplied, and the supplied gas flows in parallel to the wafer 304 made of Si or SiC and is exhausted from the first gas exhaust port 338, so that the entire wafer 304 is efficiently and uniformly formed. Be exposed to gas.

  Further, a second gas exhaust port 342 is disposed between the reaction tube 344 and the heat insulating material 372 so as to face the third gas supply port 340, and the second gas exhaust port 342 Connected to tube 392.

  Further, the inert gas supplied between the reaction tube 344 and the heat insulating material 372 is exhausted from the vacuum exhaust device 396 via the APC valve 394 that is downstream of the gas exhaust tube 392 from the second gas exhaust port 342. Is done.

  Further, preferably, in the reaction chamber 350, between the first and second gas supply nozzles 332 and 336 and the first gas exhaust port 338, between the heated body 326 and the wafer 304, A structure 370 extending in the vertical direction and having an arc-shaped cross section may be provided in the reaction chamber 350 so as to fill a space between the heated body 326 and the wafer 304. For example, as shown in FIG. 3, by providing the structures 370 at the opposing positions, the gas supplied from the first and second gas supply nozzles 332 and 336 flows along the inner wall of the heated object 326. Bypassing the wafer 304 can be prevented. When the structure 370 is preferably made of a heat insulating material, carbon felt, or the like, heat resistance and generation of particles can be suppressed.

  Next, the configuration of the processing furnace 328 and its surroundings will be described.

  FIG. 5 is a schematic cross-sectional view of the processing furnace 328 and the peripheral structure according to the embodiment of the present invention. Below the processing furnace 328, a seal cap 402 is provided as a furnace port lid for hermetically closing the lower end opening of the processing furnace 328. The seal cap 402 is made of a metal such as stainless steel and is formed in a disk shape. An O-ring (not shown) is provided on the upper surface of the seal cap 402 as a seal material that contacts the lower end of the processing furnace 328. The seal cap 402 is provided with a rotation mechanism 404, and the rotation shaft 406 of the rotation mechanism 404 is connected to the boat 320 through the seal cap 402, and the wafer 304 is rotated by rotating the boat 320. Has been.

  Further, the seal cap 402 is configured to be moved up and down in the vertical direction by a lifting motor 408 described later as a lifting mechanism provided outside the processing furnace 328, thereby bringing the boat 320 into the processing furnace 328. It is possible to carry it out. A drive control unit 410 is electrically connected to the rotation mechanism 404 and the lifting motor 408, and is configured to control at a predetermined timing so as to perform a predetermined operation (see FIG. 6 described later).

  A lower substrate 414 is provided on the outer surface of the load lock chamber 412 as a spare chamber. The lower substrate 414 is provided with a guide shaft 418 that is slidably fitted to the lift table 416 and a ball screw 420 that is screwed to the lift table 416. Further, an upper substrate 422 is provided at the upper ends of the guide shaft 418 and the ball screw 420 erected on the lower substrate 414. The ball screw 420 is rotated by an elevating motor 408 provided on the upper substrate 422, and the elevating table 416 is moved up and down by rotating the ball screw 420.

  A hollow elevating shaft 424 is vertically suspended from the elevating platform 416, and the connecting portion between the elevating platform 416 and the elevating shaft 424 is airtight, and the elevating shaft 424 is moved up and down together with the elevating platform 416. The elevating shaft 424 passes through the top plate 426 of the load lock chamber 412, and a sufficient clearance is formed in the through hole of the top plate 426 through which the elevating shaft 424 passes so that the elevating shaft 424 does not contact the top plate 426. Has been.

  A bellows 428 is provided as a stretchable hollow elastic body so as to cover the periphery of the lifting shaft 424 between the load lock chamber 412 and the lifting platform 416, and the load lock chamber 412 is kept airtight by the bellows 428. It has come to droop. The bellows 428 has a sufficient amount of expansion and contraction that can accommodate the amount of elevation of the lifting platform 416. The inner diameter of the bellows 428 is sufficiently larger than the outer diameter of the lifting shaft 424, and the bellows 428 and the lifting shaft 424 are expanded and contracted. It is comprised so that may not contact.

  The elevating board 430 is horizontally fixed to the lower end of the elevating shaft 424, and the drive unit cover 432 is airtightly attached to the lower surface of the elevating board 430 via a seal member such as an O-ring. The elevating board 430 and the drive unit cover 432 constitute a drive unit storage case 434, and this configuration isolates the inside of the drive unit storage case 434 from the atmosphere in the load lock chamber 412.

  A rotation mechanism 404 of the boat 320 is provided inside the drive unit storage case 434, and the periphery of the rotation mechanism 404 is cooled by a cooling mechanism 436.

  The power cable 438 passes through the hollow portion from the upper end of the elevating shaft 424 and is guided to the rotation mechanism 404 and connected thereto. A cooling water flow path 440 is formed in the cooling mechanism 436 and the seal cap 402. Further, a cooling water pipe 442 is led from the upper end of the elevating shaft 424 through the hollow portion to the cooling water passage 440 and connected thereto.

  As the elevating motor 408 is driven and the ball screw 420 is rotated, the drive unit storage case 434 is raised and lowered via the elevating table 416 and the elevating shaft 424.

  When the drive unit storage case 434 is raised, the seal cap 402 provided in an airtight manner on the elevating substrate 430 closes the furnace port 444 which is an opening of the processing furnace 328, and the wafer processing is possible. Further, when the drive unit storage case 434 is lowered, the boat 320 is lowered together with the seal cap 402 so that the wafer 304 can be carried out to the outside.

  Next, the control configuration of each part constituting the semiconductor manufacturing apparatus 300 for forming a SiC epitaxial film will be described.

  In FIG. 6, a temperature control unit 362, a gas flow rate control unit 388, a pressure control unit 398, and a drive control unit 410 constitute an operation unit and an input / output unit, and a main control unit 446 that controls the entire semiconductor manufacturing apparatus 300. Is electrically connected. Further, the temperature control unit 362, the gas flow rate control unit 388, the pressure control unit 398, and the drive control unit 410 are configured as a controller 448.

  Next, the reason for configuring the first gas supply system and the second gas supply system described above will be described.

  In a semiconductor manufacturing apparatus for forming a SiC epitaxial film, a source gas composed of at least a Si (silicon) atom-containing gas and a C (carbon) atom-containing gas is supplied to the reaction chamber 350 to form a SiC epitaxial film. There is a need to. Further, in the case where a plurality of wafers 304 are held in a multi-stage alignment in a horizontal posture as in the present embodiment, in order to improve the uniformity between the wafers, a film forming gas is supplied in the vicinity of each wafer. A gas supply nozzle is provided in the reaction chamber 350 so that the gas can be supplied from the gas supply port. Therefore, the gas supply nozzle also has the same conditions as the reaction chamber. At this time, if the Si atom-containing gas and the C atom-containing gas are supplied by the same gas supply nozzle, the source gas reacts to consume the source gas, and the source gas is insufficient on the downstream side of the reaction chamber 350. However, deposits such as a SiC film deposited by reaction in the gas supply nozzle block the gas supply nozzle, leading to problems such as unstable supply of the source gas and generation of particles.

  Therefore, in this embodiment, the Si atom-containing gas is supplied via the first gas supply nozzle 332 and the C atom-containing gas is supplied via the second gas supply nozzle 336. Thus, by supplying the Si atom-containing gas and the C atom-containing gas from different gas supply nozzles, it is possible to prevent the SiC film from being deposited in the gas supply nozzle. In addition, what is necessary is just to supply appropriate carrier gas, respectively, when adjusting the density | concentration and flow velocity of Si atom containing gas and C atom containing gas.

  Furthermore, a reducing gas such as hydrogen gas may be used in order to use the Si atom-containing gas more efficiently. In this case, it is desirable to supply the reducing gas via the second gas supply nozzle 336 that supplies the C atom-containing gas. Thus, by supplying the reducing gas together with the C atom-containing gas and mixing it with the Si atom-containing gas in the reaction chamber 350, the reduction of the reducing gas is reduced. Therefore, the deposition of the Si film in the first gas supply nozzle can be suppressed. In this case, the reducing gas can be used as a carrier gas for the C atom-containing gas. Note that the use of an inert gas (particularly a rare gas) such as argon (Ar) as the carrier of the Si atom-containing gas can suppress the deposition of the Si film.

  Further, it is desirable to supply a chlorine atom-containing gas such as HCl to the first gas supply nozzle 332. In this way, even if the Si atom-containing gas is decomposed by heat and can be deposited in the first gas supply nozzle, it becomes possible to enter the etching mode with chlorine, and the first gas supply nozzle It is possible to further suppress the deposition of the Si film inside.

In the example shown in FIGS. 2 to 4, SiH ₄ gas and HCl gas are supplied to the first gas supply nozzle 332, and C ₃ H ₈ gas and H ₂ gas are supplied to the second gas supply nozzle 336. Although described in the configuration, as described above, the examples shown in FIGS. 2 to 4 are combinations considered to be the best, and are not limited thereto.

  In the example shown in FIGS. 2 to 4, HCl gas is exemplified as the Cl (chlorine) atom-containing gas to be flowed when forming the SiC epitaxial film, but chlorine gas may be used.

Further, in the above description, when the SiC epitaxial film is formed, the Si (silicon) atom-containing gas and the Cl (chlorine) atom-containing gas are supplied, but a gas containing Si atoms and Cl atoms, for example, tetrachlorosilane (hereinafter, SiCl _4). Gas), trichlorosilane (hereinafter SiHCl ₃ ) gas, and dichlorosilane (hereinafter SiH ₂ Cl ₂ ) gas may be supplied. Needless to say, the gas containing Si atoms and Cl atoms is also a Si atom-containing gas or a mixed gas of Si atom-containing gas and Cl atom-containing gas. In particular, SiCl ₄ is desirable from the viewpoint of suppressing the consumption of Si in the nozzle because the temperature at which it is thermally decomposed is relatively high.

In the above description, C ₃ H ₈ gas is exemplified as the C (carbon) atom-containing gas. However, ethylene (hereinafter referred to as C ₂ H ₄ ) gas or acetylene (hereinafter referred to as C ₂ H ₂ ) gas may be used. .

Although exemplified H ₂ gas as the reducing gas, may be used other H (hydrogen) atom-containing gas is not limited thereto. Furthermore, as the carrier gas, at least one of rare gases such as Ar (argon) gas, He (helium) gas, Ne (neon) gas, Kr (krypton) gas, and Xe (xenon) gas may be used. Alternatively, a mixed gas in which the above gases are combined may be used.

  In the above description, the SiC atom-containing gas is supplied via the first gas supply nozzle 332, and the C atom-containing gas is supplied via the second gas supply nozzle 336, thereby depositing the SiC film in the gas supply nozzle. (Hereinafter, the method of separating and supplying the Si atom-containing gas and the C atom-containing gas is referred to as a “separate method”). However, although this method can suppress the deposition of the SiC film in the gas supply nozzle, it is sufficient until the mixture of the Si atom-containing gas and the C atom-containing gas reaches the wafer 304 from the gas supply ports 330 and 334. Need to be done.

  Therefore, from the viewpoint of uniformization in the wafer, it is preferable that the Si atom-containing gas and the C atom-containing gas are mixed in advance and supplied to the gas supply nozzle 332 (hereinafter, the Si atom-containing gas and the C atom-containing gas are referred to as the gas supply nozzle 332). The method of supplying from the same gas supply nozzle is called “premix method”.) However, if the Si atom-containing gas and the C atom-containing gas are supplied from the same gas supply nozzle, the SiC film may be deposited in the gas supply nozzle. On the other hand, when the ratio of chlorine (etching gas) to hydrogen (reducing gas) (Cl / H) is increased in the Si atom-containing gas, the etching effect by chlorine increases, and the reaction of the Si atom-containing gas is suppressed. Is possible. Therefore, Si atom-containing gas, C atom-containing gas, and chlorine-containing gas are supplied to one gas supply nozzle, and a reducing gas (for example, hydrogen gas) used for the reduction reaction is supplied from the other gas supply nozzle. Thus, Cl / H in the gas supply nozzle becomes large, and it is possible to suppress the deposition of the SiC film.

  Next, a substrate manufacturing method in which, for example, a SiC film is formed on a substrate such as a wafer 304 made of SiC or the like as one step of a semiconductor device manufacturing process using the semiconductor manufacturing apparatus 300 described above will be described.

  In the following description, the operation of each part constituting the semiconductor manufacturing apparatus 300 is controlled by the controller 448.

  First, when the pod 306 storing a plurality of wafers 304 is set on the pod stage 308, the pod 306 is transferred from the pod stage 308 to the pod storage shelf 312 by the pod transfer device 310 and stocked. Next, the pod 306 stocked on the pod storage shelf 312 is transported and set to the pod opener 314 by the pod transport device 310, the lid of the pod 306 is opened by the pod opener 314, and the substrate number detector 316 stores the pod 306. The number of stored wafers 304 is detected.

  Next, the wafer transfer unit 318 takes out the wafer 304 from the pod 306 at the position of the pod opener 314 and transfers it to the boat 320.

  When a plurality of wafers 304 are loaded into the boat 320, the boat 320 holding the wafers 304 is loaded into the reaction chamber 350 (boat loading) by the lifting / lowering operation of the lifting / lowering table 416 and the lifting / lowering shaft 424 by the lifting / lowering motor 408. . In this state, the seal cap 402 seals the lower end of the manifold 346 via an O-ring (not shown).

  After carrying in the boat 320, the reaction chamber 350 is evacuated by the evacuation device 396 so that the inside of the reaction chamber 350 becomes a predetermined pressure (degree of vacuum). At this time, the pressure in the reaction chamber 350 is measured by a pressure sensor (not shown), and the APC valve 394 communicating with the first gas exhaust port 338 and the second gas exhaust port 342 based on the measured pressure is Feedback controlled. Further, the object to be heated 326 is heated so that the inside of the wafer 304 and the reaction chamber 350 has a predetermined temperature. At this time, the induction coil 348 is energized based on the temperature information detected by the high-temperature radiation thermometer 356 or the low-temperature radiation thermometer 358 selected by a switching method described later so that the reaction chamber 350 has a predetermined temperature distribution. The condition is feedback controlled. Subsequently, when the boat 320 is rotated by the rotation mechanism 404, the wafer 304 is rotated in the circumferential direction.

  Subsequently, Si (silicon) atom-containing gas and Cl (chlorine) atom-containing gas contributing to the SiC epitaxial growth reaction are supplied from gas supply sources 386c and 386d, respectively, and enter the reaction chamber 350 from the first gas supply port 330. Erupted. Further, after the opening degrees of the corresponding MFCs 382a and 382b are adjusted so that the C (carbon) atom-containing gas and the reducing gas H2 gas have predetermined flow rates, the valves 384a and 384b are opened, and the respective gases are opened. Flows to the second gas line 390, flows to the second gas supply nozzle 336, and is introduced into the reaction chamber 350 from the second gas supply port 334.

  The gas supplied from the first gas supply port 330 and the second gas supply port 334 passes through the inside of the heated body 326 in the reaction chamber 350 and passes through the gas exhaust pipe 392 from the first gas exhaust port 338. Exhausted. When the gas supplied from the first gas supply port 330 and the second gas supply port 334 passes through the reaction chamber 350, the gas contacts the wafer 304 made of SiC or the like, and the SiC is formed on the surface of the wafer 304. Epitaxial film growth is performed.

  Further, after the opening of the corresponding MFC 382e is adjusted from the gas supply source 386e so that the Ar gas, which is a rare gas as an inert gas, has a predetermined flow rate, the valve 384e is opened, and the third gas line 400 is supplied to the reaction chamber 350 from the third gas supply port 340. Ar gas, which is a rare gas as an inert gas supplied from the third gas supply port 340, passes between the heat insulating material 372 and the reaction tube 344 in the reaction chamber 350, and the second gas exhaust port 342. Exhausted from.

  Next, when a preset time elapses, the gas supply described above is stopped, an inert gas is supplied from an inert gas supply source (not shown), and the space inside the heated body 326 in the reaction chamber 350 is While being replaced with the inert gas, the pressure in the reaction chamber 350 is returned to normal pressure.

  Thereafter, the seal cap 402 is lowered by the elevating motor 408, the lower end of the manifold 346 is opened, and the processed wafer 304 is carried out from the lower end of the manifold 346 to the outside of the reaction tube 344 while being held by the boat 320 ( The boat 320 waits at a predetermined position until the wafer 304 held by the boat 320 is cooled and the wafer 304 is cooled. When the waited wafers 304 of the boat 320 are cooled to a predetermined temperature, the wafers 304 are taken out from the boat 320 by the substrate transfer device 318 and transferred to and stored in an empty pod 306 set in the pod opener 314. . Thereafter, the pod 306 in which the wafers 304 are stored is transferred to the pod storage shelf 312 or the pod stage 308 by the pod transfer device 310. In this way, a series of operations of the semiconductor manufacturing apparatus 300 is completed.

Next, the temperature sensor according to the embodiment of the present invention will be described in detail.
As the temperature sensor, for example, radiation thermometers 354, 356, 358, and 360 are arranged in the vicinity of the heated body 326 and divided into three zones in the vertical direction.
The radiation thermometer 354 is disposed in the upper zone of the three longitudinal zones, and the radiation thermometers 356 and 358 are disposed in the middle zone of the three longitudinal zones. The total 360 is arranged in the lower zone among the three zones in the vertical direction.

  The radiation thermometer 354 arranged in the upper zone and the radiation thermometer 360 arranged in the lower zone are for monitoring, and either a low-temperature radiation thermometer or a high-temperature radiation thermometer is arranged depending on the purpose. Has been. Of the radiation thermometers 356 and 358 arranged in the middle zone, the radiation thermometer 356 is a high-temperature radiation thermometer, and the radiation thermometer 358 is a low-temperature radiation thermometer. The radiation thermometers 356 and 358 are arranged for the purpose of measuring the temperature at the same place, and switch between a radiation thermometer 356 that is a high-temperature radiation thermometer and a radiation thermometer 358 that is a low-temperature radiation thermometer. Take control.

  The induction coil 348 and the radiation thermometers 354, 356, 358, 360 are electrically connected to the temperature controller 362 as shown in FIG. Based on the temperature information detected by the radiation thermometer 356 or the radiation thermometer 358, the temperature control unit 362 adjusts the power supply to the induction coil 348, so that the temperature in the reaction chamber 350 becomes a desired temperature distribution. It is configured to be controlled at a predetermined timing. For example, the temperature control unit 362 compares the temperature information detected by the radiation thermometer 356 or the radiation thermometer 358 with the set temperature with respect to the induction coil 348 that is a cylindrical induction superheater driven by a high-frequency power source. The high frequency power supply is driven to output an appropriate amount of heat.

  In addition, the temperature control unit 362 performs control by switching between control based on the temperature information detected by the radiation thermometer 356 and control based on the temperature information detected by the radiation thermometer 358 by a switching method described later.

  Furthermore, thermocouples 364, 366, and 368 are arranged in the vicinity of the induction coil 348 and divided into three zones in the vertical direction. The thermocouple 364 is arranged in the upper zone of the three vertical zones, the thermocouple 366 is arranged in the middle zone of the three vertical zones, and the thermocouple 368 is arranged in the vertical zone. Of the three directional zones, they are arranged in the lower zone. The thermocouples 364, 366, and 368 are used for overtemperature protection, and are electrically connected to the temperature control unit 362, respectively.

  Next, switching of the radiation thermometer in the temperature control according to the embodiment of the present invention will be described.

  In the temperature control according to the embodiment of the present invention, for example, from a temperature control based on a measured value (detected temperature) by a radiation thermometer 358 (hereinafter, a low temperature radiation thermometer 358) which is a low temperature radiation thermometer, a high temperature radiation temperature is obtained. A threshold value P is set as a reference for determination to switch to temperature control based on a measured value (detected temperature) by a radiation thermometer 356 (hereinafter, a high-temperature radiation thermometer 356), and a measured value by a high-temperature radiation thermometer 356 ( A threshold value M different from the threshold value P is set as a criterion for switching from the detected temperature) to the temperature control based on the measurement value (detected temperature) by the low-temperature radiation thermometer 358.

  Further, a threshold value KPM that becomes a criterion for failure when switching from temperature control based on a measurement value (detection temperature) by a low-temperature radiation thermometer 358 to temperature control based on a measurement value (detection temperature) by a high-temperature radiation thermometer 356, A threshold value KMM that becomes a criterion for determining a failure when setting a threshold value KPP and switching from a measurement value (detection temperature) by the high-temperature radiation thermometer 356 to a temperature control based on the measurement value (detection temperature) by the low-temperature radiation thermometer 358; A threshold value KMP is set.

Specifically, when the measured value of the high-temperature radiation thermometer 356 is below the threshold M, the temperature control is switched to the temperature control based on the measured value by the low-temperature radiation thermometer 358.
When the measured value of the low-temperature radiation thermometer 358 exceeds the threshold value P, the temperature control is switched to the temperature control based on the measured value by the high-temperature radiation thermometer 356.

  The temperature control unit 362 includes a threshold P serving as a determination criterion for switching from temperature control by the low-temperature radiation thermometer 358 to temperature control by the high-temperature radiation thermometer 356, and low-temperature radiation temperature from the temperature control by the high-temperature radiation thermometer 356. The control is switched based on the threshold value M for switching to the temperature control by the total 358. Here, the threshold value P is larger than the threshold value M (that is, P> M).

Further, the upper limit value of the measurable temperature range of the high temperature radiation thermometer 356 is Max_High, the lower limit value of the measurable temperature range of the high temperature radiation thermometer 356 is Min_High, and the low temperature radiation thermometer 358 is measurable. When the upper limit value of the temperature range is Max_Low and the lower limit value of the temperature range measurable by the low-temperature radiation thermometer 358 is Min_Low, the threshold value P and the threshold value M satisfy the following expressions.

  Max_High> Max_Low> P> M> Min_High> Min_Low

  When switching from the control by the high-temperature radiation thermometer 356 to the control by the low-temperature radiation thermometer 358, when the high-temperature radiation thermometer 356 falls below the threshold value M, the measured value of the low-temperature radiation thermometer 358 is changed from the threshold value KMM. If it is outside the allowable range of the threshold value KMP, it is determined that either the high-temperature radiation thermometer 356 or the low-temperature radiation thermometer 358 has failed, and the temperature control is stopped. Here, the threshold values M, KMM, and KMP satisfy the following expressions.

  Max_Low ≧ KMP> M> KMM ≧ Min_Low

  However, the equal sign (=) is applied when the upper limit threshold or lower limit threshold of the allowable range is not set.

  Further, when switching from the control by the low-temperature radiation thermometer 358 to the control by the high-temperature radiation thermometer 356, when the low-temperature radiation thermometer 358 exceeds the threshold value P, the measured value of the high-temperature radiation thermometer 356 is changed from the threshold value KPM. If it is outside the allowable range of the threshold value KPP, it is determined that either the high-temperature radiation thermometer 356 or the low-temperature radiation thermometer 358 has failed, and the temperature control is stopped. Here, the threshold values P, KPM, and KPP satisfy the following expressions.

  Max_High ≧ KPP> P> KPM ≧ Min_High

  However, the equal sign (=) is applied when the upper limit threshold or lower limit threshold of the allowable range is not set.

  FIG. 7 is a diagram illustrating a temperature control switching process by the temperature control unit 362. FIG. 8 is a diagram showing switching between control by the high-temperature radiation thermometer 356 and control by the low-temperature radiation thermometer 358. In FIG. 8, the horizontal axis indicates whether the temperature control is performed by the high-temperature radiation thermometer 356 or the low-temperature radiation thermometer 358, and the vertical axis indicates the measured temperature measured by the radiation thermometer. Is shown. The measurement temperature indicated by the bold line indicates the measurement temperature measured by the low-temperature radiation thermometer 358, and the measurement temperature indicated by the broken line indicates the measurement temperature measured by the high-temperature radiation thermometer 356.

As shown in FIGS. 7 and 8, the temperature control unit 362 switches the control by comparing the measured temperature of the radiation thermometer used for the current temperature control with a threshold value. When the temperature control unit 362 switches the control target from the control by the low-temperature radiation thermometer 358 to the high-temperature radiation thermometer 356, the measured value of the low-temperature radiation thermometer 358 becomes equal to or higher than the threshold value P, and the high-temperature radiation thermometer 358 When the measured value is higher than the threshold value KPP or lower than the threshold value KPM, a failure of the low-temperature radiation thermometer or the high-temperature radiation thermometer is detected.
Similarly, if the measurement value of the low-temperature radiation thermometer 358 is equal to or greater than the threshold value P and the measurement value of the high-temperature radiation thermometer 358 is the threshold value KPP from the threshold value KPM, the control is switched to the control by the high-temperature radiation thermometer 356.
If the measured value of the low-temperature radiation thermometer 358 is less than the threshold value P, the use of the low-temperature radiation thermometer 358 is continued. At this time, the temperature control unit 362 does not consider the measurement value of the high-temperature radiation thermometer in the switching determination.

FIG. 9 is a diagram illustrating an example of failure detection of the radiation thermometer according to the embodiment of the present invention.
As shown in FIG. 9, when the temperature control by the high-temperature radiation thermometer 356 is switched to the temperature control by the low-temperature radiation thermometer 358, the measured value of the high-temperature radiation thermometer 356 falls below the threshold value M. If the measured value of the low-temperature radiation thermometer 358 is not within the range of the threshold value KMM to the threshold KMP at the time, a failure of the low-temperature radiation thermometer or the high-temperature radiation thermometer is detected.
That is, when the temperature control unit 362 switches from the temperature control by the high-temperature radiation thermometer 356 to the temperature control by the low-temperature radiation thermometer 358, the measured value of the high-temperature radiation thermometer 356 is less than the threshold value M, and the low-temperature radiation thermometer 362 When the measured value of the thermometer 358 is higher than the threshold value KMP or lower than the threshold value KMM, a failure of the low-temperature radiation thermometer or the high-temperature radiation thermometer is detected.

Similarly, if the measured value of the high-temperature radiation thermometer 356 is less than the threshold value M and the measured value of the low-temperature radiation thermometer 358 is the threshold value KMP from the threshold value KMM, the control is switched to the low-temperature radiation thermometer 358.
If the measured value of the high-temperature radiation thermometer 356 is equal to or greater than the threshold value M, the use of the high-temperature radiation thermometer 356 is continued. At this time, the temperature control unit 362 does not consider the measurement value of the low-temperature radiation thermometer in the switching determination.

  The switching of the control by the temperature control unit 362 described above can improve the instability of the temperature measurement value that is a concern at the time of switching between the multiple types of radiation thermometers and in the vicinity of the switching temperature, and can improve the temperature controllability.

  Also, by checking the measurement range of the other radiation thermometer when switching the radiation thermometer, a failure of the radiation thermometer, a parameter setting error, etc. can be detected, and safe temperature control can be realized.

  Although the above temperature control is shown by using the radiation thermometers 356 and 358 arranged in the middle zone, a high temperature radiation thermometer and a low temperature radiation thermometer are installed in the upper or lower zone. Similarly, the control may be switched.

  Further, the present invention can be applied not only to a semiconductor manufacturing apparatus for forming a SiC epitaxial film but also to a vertical substrate processing apparatus in general.

[Preferred embodiment of the present invention]
Hereinafter, preferred embodiments of the present invention will be additionally described.

(Appendix 1)
A heating means for heating the processing chamber containing the substrate;
First temperature detecting means for detecting a temperature heated by the heating means using a first radiation thermometer;
The temperature higher than the upper limit of the temperature range measured by the first radiation thermometer is set as the upper limit of the temperature range to be measured, and is higher than the lower limit of the temperature range measured by the first radiation thermometer. Second temperature detection means for detecting the temperature heated by the heating means using a second radiation thermometer whose temperature is the lower limit of the temperature range to be measured;
First control means for controlling the heating means based on the temperature detected by the first temperature detection means;
Second control means for controlling the heating means based on the temperature detected by the second temperature detection means;
When the temperature detected by the first temperature detection means exceeds the first threshold value, the temperature is switched to the second temperature detection means, and the temperature detected by the second temperature detection means is the first threshold value. When it falls below the lower second threshold value, it switches to the first temperature detecting means, and based on the temperature detected by the first temperature detecting means or the second temperature detecting means and a predetermined threshold value. Control switching means for switching between the control of the heating means by the first control means and the control of the heating means by the second control means;
A substrate processing apparatus.

(Appendix 2)
Heating the processing chamber containing the substrate by heating means;
Detecting the temperature heated by the heating means using the first radiation thermometer by the first temperature detecting means;
The temperature higher than the upper limit of the temperature range measured by the first radiation thermometer is set as the upper limit of the temperature range to be measured, and is higher than the lower limit of the temperature range measured by the first radiation thermometer. Using a second radiation thermometer whose temperature is the lower limit of the temperature range to be measured, the temperature heated by the heating means is detected by the second temperature detecting means,
When the temperature detected by the first temperature detection means exceeds the first threshold, the first control to switch to the second temperature detection means, and the temperature detected by the second temperature detection means The second control to switch to the first temperature detection means when the second threshold value lower than the first threshold value is below is detected by the first temperature detection means or the second temperature detection means Switching based on a set temperature and a predetermined threshold value,
A temperature control method for a substrate processing apparatus.

(Appendix 3)
A temperature measurement method for switching a temperature sensor according to a temperature zone in a heat treatment apparatus having a plurality of temperature sensors each having a different measurement temperature zone.

(Appendix 4)
In a heat treatment apparatus having a plurality of temperature sensors, each of which has a different measurement temperature range, when the temperature sensor is switched according to the temperature range, a temperature sensor failure detection is made based on whether the other temperature sensor is within an allowable range. Method.

(Appendix 5)
A temperature control device and a heat treatment device in which the method of Supplementary Note 3 and Supplementary Note 4 is converted into a programmer and mounted on a computer.

300 Semiconductor Manufacturing Device 304 Wafer (Substrate)
326 Heated object (derivative)
328 Processing furnace 362 Temperature controller 380 Gas supply unit 354, 356, 358, 360 Radiation thermometer 364, 366, 368 Thermocouple 448 Controller

Claims (2)

A heating means for heating the processing chamber containing the substrate;
First temperature detecting means for detecting a temperature heated by the heating means using a first radiation thermometer;
The temperature higher than the upper limit of the temperature range measured by the first radiation thermometer is set as the upper limit of the temperature range to be measured, and is higher than the lower limit of the temperature range measured by the first radiation thermometer. Second temperature detection means for detecting the temperature heated by the heating means using a second radiation thermometer whose temperature is the lower limit of the temperature range to be measured;
First control means for controlling the heating means based on the temperature detected by the first temperature detection means;
Second control means for controlling the heating means based on the temperature detected by the second temperature detection means;
When the temperature detected by the first temperature detection means exceeds the first threshold value, the temperature is switched to the second temperature detection means, and the temperature detected by the second temperature detection means is the first threshold value. When it falls below the lower second threshold value, it switches to the first temperature detecting means, and based on the temperature detected by the first temperature detecting means or the second temperature detecting means and a predetermined threshold value. Control switching means for switching between the control of the heating means by the first control means and the control of the heating means by the second control means;
A substrate processing apparatus. Heating the processing chamber containing the substrate by heating means;
Detecting the temperature heated by the heating means using the first radiation thermometer by the first temperature detecting means;
The temperature higher than the upper limit of the temperature range measured by the first radiation thermometer is set as the upper limit of the temperature range to be measured, and is higher than the lower limit of the temperature range measured by the first radiation thermometer. Using a second radiation thermometer whose temperature is the lower limit of the temperature range to be measured, the temperature heated by the heating means is detected by the second temperature detecting means,
When the temperature detected by the first temperature detection means exceeds the first threshold, the first control to switch to the second temperature detection means, and the temperature detected by the second temperature detection means The second control to switch to the first temperature detection means when the second threshold value lower than the first threshold value is below is detected by the first temperature detection means or the second temperature detection means Switching based on a set temperature and a predetermined threshold value,
A temperature control method for a substrate processing apparatus.

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