WO2014046242A1

WO2014046242A1 - Temperature gauge, substrate treatment device, temperature control method, and method for manufacturing semiconductor device

Info

Publication number: WO2014046242A1
Application number: PCT/JP2013/075479
Authority: WO
Inventors: 山口　天和; 原　大介; 周平西堂; 立野　秀人; 正導谷内
Original assignee: 株式会社日立国際電気
Priority date: 2012-09-24
Filing date: 2013-09-20
Publication date: 2014-03-27

Abstract

The temperature in a substrate accommodating chamber can be accurately measured even when the temperature in the substrate accommodating chamber is a higher temperature during a film-forming treatment, and the temperature in the substrate accommodating chamber is therefore controlled with precision. A temperature gauge for measuring the temperature in the substrate accommodating chamber is provided with a second cooling-water circulation chamber for cooling an O-ring that maintains airtightness between a mounting hole and a main body section in the exterior of the substrate accommodating chamber, melting of the O-ring can be forestalled, and the internal pressure of the substrate accommodating chamber can be reliably maintained at a predetermined value. Therefore, the temperature in the substrate accommodating chamber for forming an SiC epitaxial film can be accurately measured, and the temperature in the substrate accommodating chamber can therefore be controlled with precision.

Description

Temperature measuring instrument, substrate processing apparatus, temperature control method, and semiconductor device manufacturing method

The present invention relates to a temperature measuring device, a substrate processing apparatus, a temperature control method, and a semiconductor device manufacturing method.

Silicon carbide (SiC) is particularly attracting attention as an element material for power devices because it has higher withstand voltage and higher thermal conductivity than silicon (Si). On the other hand, it is known that SiC is difficult to manufacture a crystal substrate and a semiconductor device (semiconductor device) as compared with Si because of a small impurity diffusion coefficient. For example, the epitaxial film formation temperature of Si is about 900 ° C to 1200 ° C, whereas the epitaxial film formation temperature of SiC is 1500 ° C to 1800 ° C, which is a technology for suppressing the heat-resistant structure of devices and the decomposition of materials. Creative ingenuity is required. Furthermore, it is required to accurately control the temperature in the substrate storage chamber (deposition processing chamber) in order to improve the yield by suppressing the occurrence of variations in crystal substrates and semiconductor devices as products.

In order to accurately control the temperature in the substrate storage chamber, it is desirable to install a temperature measuring device directly in the substrate storage chamber. However, as described above, the temperature in the substrate storage chamber is high, and a reaction gas is introduced into the substrate storage chamber. Since it is necessary to spread evenly, it must be ensured that an airtight state can be maintained. In other words, it is difficult to install the temperature measuring instrument across the substrate storage chamber, and if the airtight state cannot be maintained, for example, the concentration distribution of the reaction gas in the substrate storage chamber will vary, and as a result There will be variations in the film formation state of the product.

Therefore, in a stage before the actual film forming process is performed, the temperature inside the substrate storage chamber and the temperature outside the substrate storage chamber are measured, and calibration data is obtained based on each temperature data. Then, during the film formation process, the temperature measuring device inside the substrate housing chamber is removed and only the temperature measuring device outside the substrate housing chamber is used, and the outdoor temperature data obtained by the temperature measuring device outside the substrate housing chamber is used as calibration data obtained in advance. The temperature is calibrated based on the above, and the temperature in the substrate housing chamber is obtained (estimated), thereby enabling heating with high accuracy. As a temperature measuring device used for obtaining such calibration data, for example, the one described in Patent Document 1 is known. The temperature measuring device described in Patent Document 1 uses silicon carbide (SiC) or alumina (Al ₂ O ₃ ) as a material for the protective tube so that it can withstand high temperatures in the substrate housing chamber.

JP-A-8-261844

In order to cope with the epitaxial film formation of SiC, it is necessary to set the temperature in the substrate housing chamber to a higher temperature of 1500 ° C. to 1800 ° C. as described above. Therefore, in the temperature measuring device used for obtaining the calibration data, the structure is reviewed so that it can withstand a higher temperature than the temperature measuring device described in Patent Document 1 so as to obtain higher reliability. Ingenuity was necessary.

An object of the present invention is to accurately measure the temperature in the substrate housing chamber even when the temperature in the substrate housing chamber during the film forming process is higher, and to control the temperature in the substrate housing chamber with high accuracy. It is an object of the present invention to provide a temperature measuring device, a substrate processing apparatus, a temperature control method, and a method for manufacturing a semiconductor device.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

Of the inventions disclosed in this application, the outline of typical ones will be briefly described as follows.

That is, the temperature measuring device according to one aspect of the present invention is provided integrally with the main body portion that is mounted in the mounting hole of the closing member that closes the opening side of the substrate housing chamber, A protective tube disposed inside, a thermocouple element provided inside the protective tube and provided with a contact; provided in the main body; and the mounting hole and the main body outside the substrate housing chamber And a cooling mechanism that cools the sealing member that maintains the airtightness between the two.

Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

That is, even if the temperature in the substrate housing chamber during the film forming process is higher, the temperature in the substrate housing chamber can be accurately measured, and as a result, the temperature in the substrate housing chamber can be accurately controlled.

It is the perspective view which showed the outline | summary of the substrate processing apparatus with which the temperature measuring device used suitably by embodiment of this invention is used. It is sectional drawing which showed the internal structure of the processing furnace of the substrate processing apparatus used suitably by embodiment of this invention with the gas system | strain. It is sectional drawing which showed the internal structure of the processing furnace of the substrate processing apparatus used suitably by embodiment of this invention with the temperature measurement system | strain. It is a block diagram explaining the control system of the substrate processing apparatus used suitably by embodiment of this invention. It is a cross-sectional view explaining the arrangement | positioning state of the gas nozzle in the processing furnace of the substrate processing apparatus used suitably by embodiment of this invention. It is explanatory drawing explaining the detailed structure of the temperature measuring device which concerns on 1st Embodiment of the substrate processing apparatus used suitably by embodiment of this invention. (A), (b), (c) is the temperature distribution figure which compared the temperature measuring device of FIG. 6 with the temperature measuring device of each comparative example (two types). It is explanatory drawing explaining the detailed structure of the temperature measuring device which concerns on 2nd Embodiment of the substrate processing apparatus used suitably by embodiment of this invention. It is explanatory drawing explaining the arrangement | positioning state to the processing furnace of the temperature measuring device which concerns on 3rd Embodiment of the substrate processing apparatus used suitably by embodiment of this invention.

[First Embodiment]
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, a so-called batch type vertical SiC epitaxial growth apparatus in which SiC wafers are arranged in the height direction in an SiC epitaxial growth apparatus which is an example of a substrate processing apparatus will be described. In addition, by using a batch-type vertical SiC epitaxial growth apparatus, the number of SiC wafers that can be processed at a time increases, and throughput can be improved.

<Overall configuration>
FIG. 1 is a perspective view showing an outline of a substrate processing apparatus in which the temperature measuring device of the present invention is used. First, referring to FIG. 1, in one of the substrate processing apparatus for forming a SiC epitaxial film (crystal film) using the temperature measuring device according to the first embodiment of the present invention, and a semiconductor device manufacturing process. A method for manufacturing a substrate on which a certain SiC epitaxial film is formed will be described.

A semiconductor manufacturing apparatus 10 as a substrate processing apparatus (film forming apparatus) is a batch type vertical heat treatment apparatus, and includes a casing 12 that houses a plurality of mechanisms. In the semiconductor manufacturing apparatus 10, for example, a pod (or also called a FOUP) 16 as a substrate container for storing a wafer 14 as a substrate made of Si or SiC is used as a wafer carrier. A pod stage 18 is disposed on the front side of the housing 12, and a plurality of pods 16 are conveyed from the outside to the pod stage 18. Each pod 16 contains, for example, 25 wafers 14 and is set on the pod stage 18 with the lid 16a closed.

A pod transfer device 20 is provided on the front side of the housing 12 and facing the pod stage 18. A pod storage shelf 22, a pod opener 24, and a substrate number detector 26 are provided in the vicinity of the pod transfer device 20. The pod storage shelf 22 is provided above the pod opener 24 and is configured to hold a plurality of pods 16 (five in the drawing) mounted thereon. The substrate number detector 26 is provided adjacent to the pod opener 24, and the pod transfer device 20 is configured to transfer the pods 16 one after another between the pod stage 18, the pod storage shelf 22 and the pod opener 24. Yes. The pod opener 24 opens the lid 16a of the pod 16, and the substrate number detector 26 detects the number of wafers 14 in the pod 16 with the lid 16a opened.

In the housing 12, a substrate transfer machine 28 and a boat 30 as a substrate holder are provided. The substrate transfer device 28 includes a plurality of arms (tweezers) 32 and has a structure that can be moved up and down and rotated by a driving means (not shown). Each arm 32 can take out, for example, five wafers 14 at a time. By moving each arm 32, the wafer 14 is transferred between the pod 16 and the boat 30 placed at the position of the pod opener 24. It is like that.

The boat 30 is formed of, for example, a heat resistant material such as carbon graphite or SiC, and is configured to stack and hold a plurality of wafers 14 in a horizontal posture and in a state where their centers are aligned with each other in the vertical direction. It is configured. On the lower side of the boat 30, for example, a boat heat insulating portion 34 on which a plurality of substantially cylindrical or disk-shaped heat insulating plates as heat insulating members made of a heat resistant material such as quartz or SiC is placed. It is provided and configured so that heat from the heating body 48 described later is not easily transmitted to the lower side of the processing furnace 40 (see FIGS. 2 and 3).

A processing furnace 40 is provided on the back side and the upper side in the housing 12. Inside the processing furnace 40, a boat 30 loaded so as to stack a plurality of wafers 14 is carried in, and a heat treatment (film formation process) is performed on each wafer 14.

<Processing furnace configuration>
FIG. 2 is a cross-sectional view showing the internal structure of the processing furnace together with the gas system, and FIG. 3 is a cross-sectional view showing the internal structure of the processing furnace together with the temperature measurement system. Next, the processing furnace 40 of the semiconductor manufacturing apparatus 10 for forming a SiC epitaxial film will be described with reference to FIGS.

The processing furnace 40 includes a first gas supply nozzle (gas nozzle) 60 having a first gas supply port 68, a second gas supply nozzle (gas nozzle) 70 having a second gas supply port 72, and

gas supply nozzles

60, 70. A first gas exhaust port 90 for exhausting the reaction gas from the outside to the outside is provided. Further, a third gas supply port 360 that supplies an inert gas and a second gas exhaust port 390 that exhausts the inert gas to the outside are provided.

The processing furnace 40 includes a reaction tube 42 that forms a cylindrical reaction chamber 44. The reaction tube 42 is made of a heat-resistant material such as quartz or SiC, and is formed in a cylindrical shape having a closed upper end and an opened lower end. A manifold 36 is arranged concentrically with the reaction tube 42 on the opening side (lower side) of the reaction tube 42. The manifold 36 is made of, for example, stainless steel and is formed in a cylindrical shape having an upper side and a lower side opened. The manifold 36 supports the reaction tube 42, and a seal ring (not shown) is provided between the manifold 36 and the reaction tube 42. The manifold 36 is supported by a holding body (not shown), so that the reaction tube 42 is installed vertically.

The processing furnace 40 includes a heating body 48 that is induction-heated and an induction coil 50 as a magnetic field generation unit. The heating body 48 is formed in a cylindrical shape and is disposed in the reaction chamber 44, and a substrate housing chamber 49 is formed inside the heating body 48. The substrate accommodation chamber 49 can accommodate the wafer 14 as a substrate made of Si, SiC, or the like in a horizontal posture and aligned in a state where the centers are aligned with each other, stacked in the vertical direction, and held in a held state. It is configured. The heating body 48 is induction heated by a magnetic field generated by an induction coil 50 provided outside the reaction tube 42. Thereby, when the induction coil 50 is energized, the heating body 48 generates heat, and as a result, the inside of the reaction chamber 44 (inside the substrate housing chamber 49) is heated.

Between the reaction tube 42 and the heating body 48, for example, a heat insulating material 54 formed of carbon felt or the like that is difficult to be induction-heated is provided. By providing the heat insulating material 54 in this way, the heat of the heating body 48 is suppressed from being transmitted to the reaction tube 42 or the outside of the reaction tube 42. In addition, an outer heat insulating wall 55 having, for example, a water cooling structure is provided outside the induction coil 50 in order to suppress the heat in the reaction chamber 44 from being transmitted to the outside. The outer heat insulating wall 55 is provided so as to surround the reaction chamber 44 and the induction coil 50. Further, a magnetic seal 58 is provided outside the outer heat insulating wall 55 to prevent a magnetic field generated by energizing the induction coil 50 from leaking outside.

A first gas supply nozzle for supplying at least Si (silicon) atom-containing gas and Cl (chlorine) atom-containing gas (both first reaction gases) to the wafer 14 between the heating body 48 and the wafer 14. 60 is arranged. Further, at least a C (carbon) atom-containing gas and a reducing gas (both of the second reaction gas) are supplied to the wafer 14 at a location different from the first gas supply nozzle 60 between the heating body 48 and the wafer 14. The 2nd gas supply nozzle 70 for doing is arrange | positioned (refer FIG. 5). Furthermore, a first gas exhaust port 90 is disposed between the heating body 48 and the wafer 14 on the opposite side of the

gas supply nozzles

60 and 70, and a third gas exhaust port 90 is interposed between the reaction tube 42 and the heat insulating material 54. A gas supply port 360 and a second gas exhaust port 390 are arranged.

The reaction gas supplied from the

gas supply nozzles

60 and 70 described above is an example given for explaining the semiconductor manufacturing apparatus 10, and details of these reaction gases will be described later. Further, in the present embodiment, as shown in FIG. 5, two first gas supply nozzles 60 and three second gas supply nozzles 70 are alternately provided along the circumferential direction of the substrate housing chamber 49. However, the number and arrangement of the

gas supply nozzles

60 and 70 can be arbitrarily set according to the specifications of the semiconductor manufacturing apparatus 10.

The first gas supply nozzle 60 is made of, for example, carbon graphite, and the base end portion 60a penetrates the manifold 36 and is attached to the manifold 36 by welding or the like. A plurality of first gas supply ports 68 are provided along the longitudinal direction of the first gas supply nozzle 60, and each of the first gas supply ports 68 has at least Si ( For example, monosilane (hereinafter referred to as SiH ₄ ) gas as a gas containing silicon) and hydrogen chloride (hereinafter referred to as HCl) gas as a Cl (chlorine) atom-containing gas are applied to the wafer 14 in the substrate accommodation chamber 49. It is designed to supply towards.

The first gas supply nozzle 60 is connected to the first gas line 222. The first gas line 222 is connected to, for example, the

gas pipes

213a and 213b. The

gas pipes

213a and 213b are mass flow controllers (flow rate control means) for SiH ₄ gas and HCl gas, respectively. For example, the first gas supply source 210a for supplying SiH ₄ gas and the second gas supply source 210b for supplying HCl gas are connected via 211a and 211b and

valves

212a and 212b.

With this configuration, for example, the supply flow rate, concentration, partial pressure, and supply timing of SiH ₄ gas and HCl gas can be controlled in the substrate storage chamber 49. Each

valve

212a, 212b and each

MFC

211a, 211b are electrically connected to a gas flow rate control unit 78 (see FIG. 4) of the controller 152, and a predetermined flow rate is set so that the flow rate of the supplied gas becomes a predetermined flow rate. It is controlled by timing. The first and second

gas supply sources

210a and 210b, the

valves

212a and 212b, the MFCs 211a and 211b, the

gas pipes

213a and 213b, the first gas line 222, the first gas supply nozzle 60, and the first gas supply port 68 forms a first gas supply system.

The second gas supply nozzle 70 is made of, for example, carbon graphite, and the base end portion 70a penetrates the manifold 36 and is attached to the manifold 36 by welding or the like. The second gas supply nozzle 70 is provided with a plurality of second gas supply ports 72 along the longitudinal direction, and each of the second gas supply ports 72 has at least C ( For example, propane (hereinafter referred to as C ₃ H ₈ ) gas as the carbon) atom-containing gas and hydrogen (single H atom or H ₂ molecule; hereinafter referred to as H ₂ ) as the reducing gas, for example, in the substrate housing chamber 49. Is supplied toward the wafer 14.

The second gas supply nozzle 70 is connected to the second gas line 260. The second gas line 260 is connected to, for example, the

gas pipes

213c and 213d, and the

gas pipes

213c and 213d are used as flow controllers for, for example, C ₃ H ₈ gas as C (carbon) atom-containing gas. Is connected to a third gas supply source 210c for supplying C ₃ H ₈ gas via an MFC 211c and a valve 212c, and is connected to a reducing gas, for example, H ₂ gas via an MFC 211d and a valve 212d as a flow rate controller. , it is connected to the fourth gas supply source 210d for supplying _{H 2} gas.

With this configuration, for example, the supply flow rate, concentration, partial pressure, and supply timing of C ₃ H ₈ gas and H ₂ gas can be controlled in the substrate storage chamber 49. Each

valve

212c, 212d and each

MFC

211c, 211d are electrically connected to a gas flow rate control unit 78 (see FIG. 4) of the controller 152, and a predetermined flow rate is set so that the flow rate of the supplied gas becomes a predetermined flow rate. It is controlled by timing. The third and fourth

gas supply sources

210c and 210d, the

valves

212c and 212d, the MFCs 211c and 211d, the

gas pipes

213c and 213d, the second gas line 260, the second gas supply nozzle 70, and the second gas supply port 72 forms a second gas supply system.

Here, an arbitrary number of the

gas supply ports

68 and 72 provided in the

gas supply nozzles

60 and 70 may be provided in the stacked region (product region) of the wafer 14 or in the stacked region of the wafer 14. A number corresponding to the number of stacked wafers 14 may be provided.

<Exhaust system configuration>
The first gas exhaust port 90 is disposed so as to face the positions of the

gas supply nozzles

60 and 70. A gas exhaust pipe 230 connected to the first gas exhaust port 90 passes through the manifold 36 and is attached by welding or the like. A gas cooler 215 for cooling the reaction gas (exhaust gas) that has passed through the substrate housing chamber 49 is provided on the downstream side of the gas exhaust pipe 230. Further downstream of the gas cooler 215 is a vacuum exhaust device 220 such as a vacuum pump via a pressure sensor (not shown) as a pressure detector and an APC (Auto Pressure Controller) valve 214 as a pressure regulator. It is connected. An exhaust system, that is, an exhaust line, is configured mainly by the gas exhaust pipe 230, the APC valve 214, and the pressure sensor. In addition, you may consider including the vacuum exhaust apparatus 220 and the gas cooler 215. FIG. A pressure control unit 98 (see FIG. 4) of the controller 152 is electrically connected to the pressure sensor and the APC valve 214, and the pressure control unit 98 is based on the pressure detected by the pressure sensor. Is adjusted at a predetermined timing so that the pressure in the processing furnace 40 becomes a predetermined pressure.

In this manner, at least Si (silicon) atom-containing gas and Cl (chlorine) atom-containing gas are supplied from the first gas supply ports 68 into the substrate housing chamber 49, and at least C ( By supplying the carbon) atom-containing gas and the reducing gas, the reaction gas supplied into the substrate housing chamber 49 is directed to the wafer 14 made of Si or SiC as shown by the solid line arrow in FIG. Thereafter, the air flows in parallel on the surface of the wafer 14 and is exhausted from the first gas exhaust port 90. Therefore, the entire film formation surface of the wafer 14 is exposed to the reaction gas efficiently and uniformly.

The third gas supply port 360 is disposed between the reaction tube 42 and the heat insulating material 54, and the base end side (lower side) penetrates the manifold 36 and is attached to the manifold 36 by welding or the like. . Further, the second gas exhaust port 390 is disposed between the reaction tube 42 and the heat insulating material 54 so as to face the third gas supply port 360, and the second gas exhaust port 390 is connected to the gas exhaust tube 230. It is connected.

The third gas supply port 360 is connected to the third gas line 240, and the third gas line 240 is connected to the fifth gas supply source 210e via the valve 212e and the MFC 211e. As the inert gas, for example, a rare gas Ar (argon) gas or N2 (nitrogen) gas is supplied from the fifth gas supply source 210e and contributes to the growth of the SiC epitaxial film, for example, Si (silicon). ) Atom-containing gas, C (carbon) atom-containing gas, Cl (chlorine) atom-containing gas, or a mixed gas thereof is prevented from entering between the reaction tube 42 and the heat insulating material 54. Unnecessary products are prevented from adhering to the inner wall or the outer wall of the heat insulating material 54.

Here, each of the valve 212e and each MFC 211e is also electrically connected to the gas flow rate control unit 78 (see FIG. 4) of the controller 152 and controlled at a predetermined timing so that the Ar gas flow rate becomes a predetermined flow rate. It is like that. The inert gas supplied between the reaction tube 42 and the heat insulating material 54 is evacuated through the second gas exhaust port 390 and the gas cooler 215 and the APC valve 214 on the downstream side of the gas exhaust tube 230. The apparatus 220 is evacuated.

As shown in FIG. 3, first, second, and third temperature control blocks (temperature measurement chips) 53 a, 53 b, and 53 c are provided between the heating body 48 and the heat insulating material 54. Each of the temperature control blocks 53a to 53c is formed in a substantially rectangular parallelepiped shape with the same material as the heating body 48, and thereby generates heat at substantially the same temperature as the heating body 48 when the induction coil 50 is energized. It has become. The temperature control blocks 53a to 53c are arranged at predetermined intervals along the circumferential direction of the heating body 48, and are disposed at height positions corresponding to the lower, middle, and upper stages of the boat 30, respectively. Accordingly, by measuring the temperature of each of the temperature control blocks 53a to 53c, the temperature distribution (heating state) of each wafer 14 stacked on the boat 30 in the substrate accommodation chamber 49 can be known.

The manifold 36 is provided with three viewports 56 (only one is shown in the drawing) so that each of the temperature control blocks 53a to 53c can be viewed from the outside. The viewports 56 are provided corresponding to the temperature control blocks 53a to 53c, respectively, and are arranged at predetermined intervals along the circumferential direction of the manifold 36. In addition, three reflecting mirrors 57 are provided at portions of the manifold 36 facing the viewports 56 so as to correspond to the viewports 56, respectively, and the reflecting mirrors 57 are directed toward the outer peripheral side of the manifold 36. It is inclined at an inclination angle of about 45 °. Further, three radiation thermometers 59 (only one is shown in the figure) are provided on the outer peripheral portion of the manifold 36 corresponding to each of the temperature control blocks 53a to 53c. That is, each radiation thermometer 59 measures the temperature of each temperature control block 53a to 53c via each reflection mirror 57.

Here, each of the temperature control blocks 53a to 53c, each of the reflection mirrors 57, and each of the radiation thermometers 59 constitutes an outdoor temperature measuring device (heater temperature measuring device) in the present invention, and these are the substrate storage chamber 49. The temperature in the vicinity of the heating body 48 is measured outside. Thus, the temperature inside the substrate storage chamber 49 is indirectly measured (estimated) by the above-described outdoor temperature measurement device without providing a temperature measurement device (profile temperature measurement device) inside the substrate storage chamber 49. can do. Each of the temperature control blocks 53a to 53c is attached to the inside of the heat insulating material 54 (between the heating body 48 and the heat insulating material 54), and the height dimensions h1, h2, h3 from the respective reflecting mirrors 57 are attached. Are height dimensions corresponding to the lower, middle and upper stages of the boat 30, respectively.

Each radiation thermometer 59 is electrically connected to the temperature control unit 52 of the controller 152, and the temperature data of each temperature control block 53 a to 53 c measured by each radiation thermometer 59 is stored in the substrate storage chamber 49. It is sent to the temperature control unit 52 as outdoor temperature data indicating the external temperature. In addition, the induction coil 50 is also electrically connected to the temperature control unit 52 (see FIG. 4) of the controller 152, and based on the outdoor temperature data measured by each radiation thermometer 59, the induction coil 50 is thereby connected. As a result, the power supply state is adjusted, and as a result, the temperature in the substrate housing chamber 49 is controlled at a predetermined timing so as to have a desired temperature distribution.

<Configuration around the processing furnace>
As shown in FIG. 3, a seal cap 101 as a closing member that hermetically closes the opening side of the reaction tube 42 (manifold 36) is provided below the processing furnace 40. Here, a temperature measuring device 103 arranged so as to straddle the inside and outside of the substrate housing chamber 49 is attached to the seal cap 101, and the seal cap 101 heat-treats (film-formation treatment) each wafer 14. In the previous stage, it is used to measure the temperature in the heated substrate storage chamber 49 and obtain room temperature data in advance.

The seal cap 101 is configured to close the opening side of the substrate housing chamber 49 and is formed in a disk shape from a metal such as stainless steel. A seal ring (not shown) is provided between the upper surface of the seal cap 101 and the lower surface of the manifold 36 in an airtight manner. Further, the rotation shaft 106 of the rotation mechanism 104 passes through the seal cap 101, and the rotation shaft 106 is connected to the boat heat insulating portion 34. Note that when the room temperature data is obtained in advance, the rotating mechanism 104 is in a stopped state.

The seal cap 101 is driven up and down in the vertical direction by an elevating mechanism (not shown) provided outside the processing furnace 40. Thereby, the boat 30 can be carried into and out of the substrate storage chamber 49. However, a plurality of wafers 14 are stacked on the boat 30 only when the heat treatment is actually performed. Further, the drive mechanism 108 (see FIG. 4) of the controller 152 is electrically connected to the rotation mechanism 104 and the lifting mechanism, and the rotation mechanism 104 and the lifting mechanism are controlled at a predetermined timing so as to perform a predetermined operation. It has become so.

As shown in FIG. 6, the seal cap 101 is provided with a mounting hole 101 a for attaching the temperature measuring device 103. An adapter 101b formed in a substantially cylindrical shape for attaching the temperature measuring device 103 to the seal cap 101 is firmly fixed to the mounting hole 101a so as to be kept airtight by welding or the like.

The adapter 101b is formed of a metal such as stainless steel like the seal cap 101, and an O-ring (seal member) 107 for maintaining airtightness between the adapter 101b and the temperature measuring device 103 is formed on the radially inner side thereof. Is provided. The O-ring 107 is formed of heat-resistant rubber (fluorine rubber, silicone rubber, or the like) that can withstand high temperatures so that it can be elastically deformed and kept airtight between the adapter 101b and the temperature measuring device 103. Further, the O-ring 107 is disposed on the lower side of the adapter 101b so as to be separated from the substrate housing chamber 49 (heat source). As described above, the O-ring 107 keeps the airtightness between the mounting hole 101 a of the seal cap 101 and the main body 200 of the temperature measuring device 103 outside the substrate housing chamber 49.

An annular first cooling water circulation chamber 101c is formed around the mounting hole 101a of the seal cap 101 so as to surround the mounting hole 101a. A cooling water supply device 105 (see FIG. 3) including a storage tank, a pump, etc. (not shown) is connected to the first cooling water circulation chamber 101c via a flowing water pipe 105a. Then, the cooling water supply device 105 is driven and controlled by the temperature control unit 52, whereby the cooled cooling water CW is supplied into the first cooling water circulation chamber 101c as shown by the solid line arrow in FIG. As shown by the broken line arrows, the cooling water HW circulated and heated in the first cooling water circulation chamber 101c is discharged to the outside. In this way, by cooling the periphery of the mounting hole 101a, it is possible to suppress high temperature from being transmitted to the connecting portion between the temperature measuring device 103 and the seal cap 101, and to provide a rubber component or resin provided between the two. Damage to parts (O-ring 107 etc.) is reduced.

The temperature measuring device 103 includes a main body portion 200 made of stainless steel and a protective tube 300 made of silicon carbide provided integrally with the main body portion 200. The main body 200 includes a mounting cylinder portion 201 that is mounted in the mounting hole 101a of the seal cap 101 via the adapter 101b. An O-ring 107 provided on the inner side in the radial direction of the adapter 101b is fitted to the mounting cylinder portion 201, thereby maintaining an airtight state between the adapter 101b and the mounting cylinder portion 201. As a result, the pressure in the substrate accommodating chamber 49 can be maintained at a predetermined pressure.

A cooling portion 203 that forms a second cooling water circulation chamber (cooling water circulation chamber) 202 is integrally provided on the O-ring 107 side (downward side) along the axial direction of the mounting cylinder portion 201. The cooling part 203 is formed to have a larger diameter than the mounting cylinder part 201, thereby forming a stepped part 204 between the cooling part 203 and the mounting cylinder part 201. The step portion 204 has a function of positioning the temperature measuring device 103 with respect to the adapter 101b. A protective tube fitting recess 201a to which a proximal end portion of the protective tube 300 is fitted and fixed is formed on the protective tube 300 side (upper side) along the axial direction of the mounting cylinder portion 201. Thus, the protective tube 300 can be installed straight and coaxially with the main body 200 by fitting and fixing the proximal end portion of the protective tube 300 to the protective tube fitting recess 201a.

The second cooling water circulation chamber 202 constitutes a cooling mechanism in the present invention, and is arranged so as to be close to the O-ring 107 immediately below the O-ring 107. The second cooling water circulation chamber 202 is formed in an annular shape so as to follow the shape of the O-ring 107, and is connected to the cooling water supply device 105 via the flowing water pipe 105a, similarly to the first cooling water circulation chamber 101c. As a result, the cooled cooling water CW is supplied into the second cooling water circulation chamber 202 as shown by the solid line arrows in FIG. 6 and circulates in the second cooling water circulation chamber 202 as shown by the broken arrows in FIG. Then, the heated cooling water HW is discharged to the outside. Thus, by cooling the vicinity of the O-ring 107 in an annular shape following the shape of the O-ring 107, high temperature is effectively prevented from being transmitted to the O-ring 107, and the O-ring 107 is melted. Is prevented in advance.

The protective tube 300 is formed in a cylindrical shape, the closed top portion side of the protective tube 300 is disposed on the upper side opposite to the main body portion 200 side, and the base end portion serving as the opening side is the main body portion 200. Are fitted and fixed to the protective tube fitting recess 201a. The protective tube 300 is arranged inside the substrate housing chamber 49, and three sets of first, second, and

third thermocouple wires

301a, 301b, and 301c are provided inside the protective tube 300. (See FIG. 3). The thermocouple wires 301a to 301c are insulated from each other via insulating members (not shown), and have different lengths. In addition, first, second, and

third contacts

302a, 302b, and 302c (black dot portions in the figure) are provided at the ends of the thermocouple wires 301a to 301c that are disposed in the protective tube 300, respectively. . That is, the contacts 302 a to 302 c of the thermocouple wires 301 a to 301 c are arranged at different positions along the longitudinal direction of the protective tube 300.

Here, as shown in FIG. 3, the first contact 302a of the first thermocouple wire 301a is provided at a height position (h1) corresponding to the first temperature control block 53a constituting the outdoor temperature measuring device. The second contact 302b of the second thermocouple strand 301b is provided at a height position (h2) corresponding to the second temperature control block 53b constituting the outdoor temperature measuring device, and the third thermocouple strand The third contact 302c of 301c is provided at a height position (h3) corresponding to the third temperature control block 53c constituting the outdoor temperature measuring device. That is, the first contact 302a of the first thermocouple wire 301a measures the temperature near the lower stage portion of the boat 30, and the second contact 302b of the second thermocouple wire 301b is the temperature near the middle step portion of the boat 30. The third contact 302c of the third thermocouple wire 301c measures the temperature near the upper portion of the boat 30.

However, the thermocouple wires 301a to 301c and the contacts 302a to 302c, the temperature control blocks 53a to 53c, the reflection mirrors 57, and the radiation thermometers 59 are not necessarily provided in groups of three. One set or two sets may be provided, or four or more sets may be provided. For example, the sets may be provided separately according to the heating body 48 that is divided and controlled for each divided part. . In short, the required number of sets may be determined according to the accuracy (specifications) of temperature control required for the semiconductor manufacturing apparatus 10.

The ends of the thermocouple strands 301a to 301c opposite to the contact points 302a to 302c pass through the insertion holes 200a formed in the main body 200 forming the temperature measuring device 103, so that the substrate accommodating chamber 49 The first, second, and

third connectors

303a, 303b, and 303c are provided at the ends of the connectors. The temperature measuring device 103 is electrically connected to the temperature control unit 52 (see FIGS. 3 and 4) of the controller 152 via the connectors 303a to 303c. As a result, the change in voltage from each of the contacts 302 a to 302 c, that is, the room temperature data of the substrate housing chamber 49 is sent to the temperature controller 52. Here, the insertion hole 200a of the main body 200 is closed by a sealing part 200b filled with a heat-resistant epoxy resin or the like, so that the pressure in the substrate housing chamber 49 can be maintained at a predetermined pressure. It has become.

<Control unit>
Next, the controller 152 that controls each part (various valves, driving parts, etc.) constituting the semiconductor manufacturing apparatus 10 for forming a SiC epitaxial film will be described.

As shown in FIG. 4, the controller 152 includes a temperature control unit 52, a gas flow rate control unit 78, a pressure control unit 98, and a drive control unit 108. The temperature control unit 52, the gas flow rate control unit 78, the pressure control unit 98, and the drive control unit 108 constitute an operation unit and an input / output unit, and are electrically connected to the main control unit 150 that controls the entire semiconductor manufacturing apparatus 10, respectively. Connected.

<Details of reaction gas>
Next, the reason why the first gas supply system and the second gas supply system are provided will be described in detail.

In a semiconductor manufacturing apparatus for forming a SiC epitaxial film, a reaction gas (raw material gas) composed of at least a Si (silicon) atom-containing gas and a C (carbon) atom-containing gas is supplied to the reaction chamber, whereby SiC It is necessary to form an epitaxial film. Further, in the case where the plurality of stacked wafers 14 are arranged in multiple stages in a horizontal posture and held on the boat 30 as in the present embodiment, the supply of the reaction gas to each wafer 14 is made uniform. For this purpose, the

gas supply nozzles

60 and 70 are provided in the substrate accommodating chamber 49 and along the longitudinal direction of the boat 30 in order to supply reaction gases from the vicinity of the wafers 14. Accordingly, the conditions in the

gas supply nozzles

60 and 70 are the same as those in the substrate storage chamber 49.

Here, if the Si atom-containing gas and the C atom-containing gas are supplied by the same gas supply nozzle, the reaction gases react with each other and are consumed, and the reaction gas is insufficient on the downstream side of the substrate housing chamber 49. In addition to the deposition of the SiC film and the like that reacts and accumulates in the gas supply nozzle, the gas supply port of the gas supply nozzle is blocked, the reaction gas supply becomes unstable, and particles are generated. Will occur.

Therefore, in the present embodiment, the Si atom-containing gas is supplied from the first gas supply nozzle 60, and the C atom-containing gas is supplied from the second gas supply nozzle 70. In this way, by supplying the Si atom-containing gas and the C atom-containing gas from different gas supply nozzles, it is possible to prevent the SiC film from being deposited in the gas supply nozzle. In addition, what is necessary is just to supply appropriate carrier gas, respectively, when adjusting the density | concentration and flow velocity of Si atom containing gas and C atom containing gas.

Furthermore, in order to use the Si atom-containing gas more efficiently, a reducing gas such as hydrogen gas may be used. In this case, the reducing gas is desirably supplied from the second gas supply nozzle 70 that supplies the C atom-containing gas. In this way, the reducing gas is supplied together with the C atom-containing gas and mixed with the Si atom-containing gas in the substrate accommodating chamber 49, so that the reducing gas is reduced. Therefore, the deposition of the Si film in the first gas supply nozzle 60 can be suppressed. In this case, the reducing gas can be used as a carrier gas for the C atom-containing gas. In addition, it is possible to suppress deposition of the Si film by using an inert gas (particularly a rare gas) such as Ar gas as the carrier of the Si atom-containing gas.

Further, it is desirable to supply a chlorine atom-containing gas such as HCl to the first gas supply nozzle 60. In this way, even if the Si atom-containing gas is decomposed by heat and can be deposited in the first gas supply nozzle 60, it becomes possible to enter the etching mode with chlorine, and the first gas supply nozzle It is possible to further suppress the deposition of the Si film in the 60.

In the present embodiment, as shown in FIG. 2, SiH ₄ gas and HCl gas are supplied to the first gas supply nozzle 60, and C ₃ H ₈ gas and H ₂ gas are supplied to the second gas supply nozzle 70. Although explained in the configuration of supplying, the combination of these reaction gases is considered to be the best combination as described above, and is not limited to these.

In the present embodiment, as shown in FIG. 2, the case where HCl gas is used as the Cl (chlorine) atom-containing gas supplied when the SiC epitaxial film is formed is shown, but the present invention is not limited to this. Chlorine gas may be used.

Further, in the present embodiment, when the SiC epitaxial film is formed, the Si (silicon) atom-containing gas and the Cl (chlorine) atom-containing gas are separately supplied. A gas containing atoms such as tetrachlorosilane (hereinafter referred to as SiCl ₄ ) gas, trichlorosilane (hereinafter referred to as SiHCl ₃ ) gas, or dichlorosilane (hereinafter referred to as SiH ₂ Cl ₂ ) gas may be supplied. Needless to say, the gas containing Si atoms and Cl atoms is also a Si atom-containing gas or a mixed gas of Si atom-containing gas and Cl atom-containing gas. In particular, SiCl ₄ is desirable from the viewpoint of suppressing consumption of Si in the nozzle because the temperature at which pyrolysis is relatively high.

Furthermore, in the present embodiment, the case where C ₃ H ₈ gas is used as the C (carbon) atom-containing gas is shown, but not limited thereto, ethylene (hereinafter referred to as C ₂ H ₄ ) gas, acetylene (hereinafter referred to as “C ₃ H ₈ gas”). C ₂ H ₂ gas may be used.

In the present embodiment, the case where H ₂ gas is used as the reducing gas has been described, but the present invention is not limited to this, and other H (hydrogen) atom-containing gas may be used. Further, as the carrier gas, at least one of rare gases such as Ar (argon) gas, He (helium) gas, Ne (neon) gas, Kr (krypton) gas, and Xe (xenon) gas may be used. A mixed gas in which these rare gases are arbitrarily combined may be used.

In the present embodiment, the Si atom-containing gas is supplied from the first gas supply nozzle 60 and the C atom-containing gas is supplied from the second gas supply nozzle 70, thereby suppressing the deposition of the SiC film in the gas supply nozzle. (Hereinafter, a method of separating and supplying the Si atom-containing gas and the C atom-containing gas is referred to as a “separate method”). However, in this separate method, although deposition of the SiC film in the gas supply nozzle can be suppressed, the Si atom-containing gas and the C atom-containing gas are allowed to reach the wafers 14 from the

gas supply ports

68 and 72. It is necessary to mix well between.

Therefore, from the viewpoint of uniforming the reaction gas to each wafer 14, it is desirable that the Si atom-containing gas and the C atom-containing gas are mixed in advance and supplied from the first gas supply nozzle 60 (hereinafter referred to as “the first gas supply nozzle 60”) A method of supplying the Si atom-containing gas and the C atom-containing gas from the same gas supply nozzle is referred to as a “premix method”. However, according to this premix method, there is a possibility that the SiC film is deposited in the gas supply nozzle. On the other hand, when the ratio of chlorine (etching gas) to hydrogen (reducing gas) (Cl / H) is increased in the Si atom-containing gas, the etching effect by chlorine increases, and the reaction of the Si atom-containing gas is suppressed. Is possible. Therefore, by supplying the Si atom-containing gas, the C atom-containing gas, and the chlorine-containing gas to one gas supply nozzle, and supplying the reducing gas (for example, hydrogen gas) used for the reduction reaction from the other gas supply nozzle, Cl / H in the gas supply nozzle becomes large, and it is possible to suppress the deposition of the SiC film.

<Method for Forming SiC Epitaxial Film>
Next, using the semiconductor manufacturing apparatus 10 formed as described above, as a step of a semiconductor device manufacturing process, for example, a substrate on which a SiC epitaxial film is formed on a substrate such as a wafer 14 made of SiC or the like. A processing method will be described. In the following description, the operation of each part constituting the semiconductor manufacturing apparatus 10 is controlled by the controller 152.

First, as shown in FIG. 3, the opening side of the substrate accommodation chamber 49 is closed by the seal cap 101 before the heat treatment (film formation treatment) of each wafer 14, and the temperature inside the heated substrate accommodation chamber 49 is set. taking measurement. Thereby, temperature data in the substrate storage chamber 49, that is, room temperature data is obtained. At this time, the induction coil 50 is energized by the temperature control unit 52, and the energization state at this time is adjusted based on the temperature data from the temperature measuring device 103. Here, since the temperature measuring device 103 is disposed in the vicinity of the wafer 14 in the substrate accommodating chamber 49, the temperature in the substrate accommodating chamber 49 is the same high temperature (1500 ° C.) as when each wafer 14 is actually heat-treated. To 1800 ° C) with high accuracy.

When the room temperature data is obtained in advance by the temperature measuring device 103, the cooling water supply device 105 is driven and controlled by the temperature control unit 52 at the same time. Then, by the cooling control of the cooling water supply device 105, the cooled cooling water CW (approximately 15 ° C. at room temperature) is supplied to the first cooling water circulation chamber 101 c of the seal cap 101 and the second cooling water circulation chamber 202 of the temperature measuring device 103. ) Is supplied. That is, the second cooling water circulation chamber 202 as a cooling mechanism operates. As a result, the high temperature in the substrate housing chamber 49 is transmitted to the rubber parts and resin parts forming the temperature measuring device 103, that is, the O-ring 107 and the sealing portion 200b, and degassing and the like from the constituent materials of these parts. This prevents the impurities from diffusing into the semiconductor manufacturing apparatus 10.

Here, FIG. 7A shows a temperature distribution diagram of the temperature measuring device 103. The cooled cooling water CW circulating in the first cooling water circulation chamber 101c and the second provided integrally with the temperature measuring device 103 are shown in FIG. It can be seen that the periphery of the O-ring 107 and the sealing portion 200b is effectively cooled by the cooled cooling water CW circulating in the cooling water circulation chamber 202. Specifically, the periphery of the O-ring 107 is cooled to “15 ° C. to 200 ° C.”, which is much lower than the melting temperature (about 300 ° C.) of the O-ring 107 made of heat-resistant rubber. Therefore, the O-ring 107 is melted to cause a sealing failure and the pressure in the substrate housing chamber 49 is prevented from becoming unstable (opened), and accurate indoor temperature data is obtained. Can do.

On the other hand, FIG. 7B shows “Comparative example 1” of the temperature measuring device 103. In the comparative example 1, in the vicinity of the O-ring 107 of the main body 200 forming the temperature measuring device 103, FIG. The case where the cooling mechanism CD comprised as a different body from the main-body part 200 is attached is shown. In the comparative example 1, the temperature measurement according to the present embodiment is performed even when the cooled cooling water CW is circulated through the first cooling water circulation chamber 101c of the seal cap 101 and the second cooling water circulation chamber CR of the cooling mechanism CD. It can be seen that the cooling efficiency is lower than that of the vessel 103 (see FIG. 7A). Specifically, the periphery of the O-ring 107 is “200 ° C. to 300 ° C.”, which is close to the melting temperature of the O-ring 107. Therefore, it can be seen that the O-ring 107 may melt and cause a sealing failure. As described above, when the separate cooling mechanism CD is attached to the main body portion 200, the minute gap between the two becomes a heat insulating material to reduce the cooling efficiency. I can not say.

FIG. 7C shows a “comparative example 2” of the temperature measuring device 103. In the comparative example 2, the case where the cooling mechanism is eliminated from the main body 200 forming the temperature measuring device 103 is shown. Yes. In this case, the cooling is performed only by the cooled cooling water CW circulating in the first cooling water circulation chamber 101c of the seal cap 101. Therefore, a sufficient cooling effect cannot be obtained. Specifically, the periphery of the O-ring 107 is “400 ° C. to 500 ° C.” exceeding the melting temperature of the O-ring 107. Thus, comparing the cooling effects, it was found that it is desirable to integrally provide the second cooling water circulation chamber 202 in the temperature measuring device 103 as in the present embodiment shown in FIG.

As described above, the opening side of the substrate storage chamber 49 is closed by the seal cap 101 before the heat treatment (film formation processing) of each wafer 14, and the temperature inside the heated substrate storage chamber 49 is measured by the temperature measuring device 103. The step of measuring and obtaining the room temperature data of the substrate housing chamber 49 constitutes the room temperature measuring step in the temperature control method and semiconductor device manufacturing method of the present invention.

Next, with the substrate housing chamber 49 heated, each radiation thermometer 59 measures the external temperature of the substrate housing chamber 49 to obtain outdoor temperature data. Here, each radiation thermometer 59 measures the temperature of each temperature control block 53a to 53c via each reflection mirror 57. As described above, the process of obtaining the outdoor temperature data by the outdoor temperature measuring device including the radiation thermometers 59, the reflection mirrors 57, and the temperature control blocks 53a to 53c is the manufacturing method of the temperature control method and the semiconductor device of the present invention. This constitutes an outdoor temperature measuring step in the method.

Thereafter, the temperature control unit 52 of the controller 152 calculates temperature calibration data based on each temperature data (indoor temperature data and outdoor temperature data) obtained in the indoor temperature measurement process and the outdoor temperature measurement process. Here, the temperature calibration data is obtained from, for example, outdoor temperature data when the inside of the substrate housing chamber 49 is at a desired room temperature and the amount of current supplied to the induction coil 50 at this time. When the wafer 14 is actually heat-treated by energizing the induction coil 50 and adjusting the outdoor temperature based on the above, the substrate housing chamber 49 is brought to a desired room temperature without using the temperature measuring device 103. Can be controlled. As described above, the step of calculating the temperature calibration data based on the indoor temperature data and the outdoor temperature data constitutes the temperature calibration data calculation step in the temperature control method and the semiconductor device manufacturing method of the present invention.

After completing the temperature calibration data calculation process, the process proceeds to a process of actually heat-treating each wafer 14. First, the temperature measuring device 103 is removed by a manual operation by an operator or an automatic operation by an elevating mechanism.

Thereafter, as shown in FIG. 1, when the pod 16 storing a plurality of wafers 14 is set on the pod stage 18, the pod 16 is transferred from the pod stage 18 to the pod storage shelf 22 by the pod transfer device 20. To do. Next, the pod 16 stocked on the pod storage shelf 22 is transported and set to the pod opener 24 by the pod transport device 20, the lid 16 a of the pod 16 is opened by the pod opener 24, and the pod 16 is detected by the substrate number detector 26. The number of wafers 14 housed in is detected. Next, the wafer transfer unit 28 takes out the wafer 14 from the pod 16 at the position of the pod opener 24, and transfers the taken out wafer 14 to the boat 30.

When a plurality of wafers 14 are loaded and stacked in the boat 30, the boat 30 holding the wafers 14 is loaded into the substrate storage chamber 49, that is, boat loaded, by the lifting drive of the lifting mechanism. A series of steps up to this point, that is, a step until the temperature measuring device 103 is removed and a plurality of wafers 14 stacked on the boat 30 are transferred into the substrate accommodating chamber 49 constitutes a substrate transfer step.

Thereafter, by further raising and lowering the lifting mechanism, the seal cap 101 is brought into contact with the lower surface of the manifold 36, whereby the opening side of the substrate housing chamber 49 is closed. Next, the substrate evacuation chamber 220 (reaction chamber 44) is evacuated by the evacuation device 220 so that a predetermined pressure (degree of vacuum) is obtained. At this time, the pressure in the substrate housing chamber 49 is measured by the pressure sensor, and the APC valve 214 communicating with the first gas exhaust port 90 and the second gas exhaust port 390 is feedback controlled based on the measured pressure.

Further, the heating body 48 is heated so that the inside of the wafer 14 and the substrate housing chamber 49 is at a predetermined temperature. At this time, the temperature control unit 52 measures the temperature calibration data obtained in the temperature calibration data calculation process and each radiation thermometer 59 (outdoor temperature measuring device) so that the inside of the substrate housing chamber 49 has a predetermined temperature distribution. The energization amount to the induction coil 50 is controlled based on the current outdoor temperature data. Thus, the temperature of the heating body 48 is adjusted so that the inside of the substrate housing chamber 49 becomes a desired temperature (1500 ° C. to 1800 ° C.).

Subsequently, the boat 30 is rotated by the rotating mechanism 104, and thereby the wafer 14 is also rotated. Thus, the step of closing the opening side of the substrate housing chamber 49 with the seal cap 101 and adjusting the temperature of the heating body 48 using the temperature calibration data is performed in the temperature control method and the semiconductor device manufacturing method of the present invention. The heating body temperature adjustment process is comprised.

Thereafter, Si (silicon) atom-containing gas and Cl (chlorine) atom-containing gas contributing to the growth of the SiC epitaxial film are respectively supplied into the substrate housing chamber 49 heated to a desired temperature, respectively, as the first and second gas supply sources. The gas is supplied from 210 a and 210 b and is injected into the substrate storage chamber 49 from the first gas supply port 68. Further, after adjusting the opening degree of the

corresponding MFCs

211c and 211d so that the C (carbon) atom-containing gas and the reducing gas H ₂ gas have a predetermined flow rate, the

valves

212c and 212d are opened, and the respective reactions are performed. The gas flows through the second gas line 260 and is injected into the substrate housing chamber 49 through the second gas supply nozzle 70 and the second gas supply port 72. The reaction gas injected from the first gas supply port 68 and the second gas supply port 72 flows inside the heating body 48 in the substrate housing chamber 49 and is exhausted from the first gas exhaust port 90 through the gas exhaust pipe 230. The When the reaction gas injected from the first gas supply port 68 and the second gas supply port 72 passes through the substrate housing chamber 49, the reaction gas comes into contact with the wafer 14 made of SiC or the like, and the film formation surface of the wafer 14. A SiC epitaxial film (crystal film) is formed on top.

Further, after adjusting the opening of the corresponding MFC 211e so that Ar gas (rare gas) as an inert gas has a predetermined flow rate from the fifth gas supply source 210e, the valve 212e is opened, and the third gas line 240 is opened. It circulates and is supplied into the reaction chamber 44 from the third gas supply port 360. Ar gas as an inert gas supplied from the third gas supply port 360 passes between the heat insulating material 54 and the reaction tube 42 in the reaction chamber 44 and is exhausted from the second gas exhaust port 390. Thereafter, the reaction gas is exposed to each wafer 14 as described above, and when a preset time has elapsed, the supply control of each reaction gas is stopped. The series of steps so far, that is, the step of forming the SiC epitaxial film on the film forming surface of each wafer 14 by supplying the reaction gas constitutes the substrate processing step in the method for manufacturing a semiconductor device of the present invention. .

Next, an inert gas is supplied from an inert gas supply source (not shown), the inside of the substrate storage chamber 49 is replaced with an inert gas, and the pressure in the substrate storage chamber 49 (reaction chamber 44) is restored to normal pressure. . After the inside of the substrate storage chamber 49 returns to normal pressure, the seal cap 101 is lowered by the lifting drive of the lifting mechanism, and the opening side of the substrate storage chamber 49 is opened. Thereafter, the raising / lowering drive of the raising / lowering mechanism is continued, and each heat-treated (film-formed) wafer 14 is carried out from the lower side of the manifold 36 to the outside of the substrate housing chamber 49 while being held by the boat 30, that is, Boat unloaded. Each wafer 14 held in the boat 30 is in a standby state inside a load lock chamber (not shown) until it cools.

Thereafter, when each wafer 14 is cooled to a predetermined temperature, each wafer 14 is taken out from the boat 30 by the operation of the substrate transfer device 28 and transferred to the empty pod 16 set in the pod opener 24. Stored. Thereafter, the pod 16 storing the wafers 14 is transferred to the pod storage shelf 22 or the pod stage 18 by the operation of the pod transfer device 20. In this way, a series of operations of the semiconductor manufacturing apparatus 10 is completed.

<Typical effects of the first embodiment>
As described above, according to the technical idea described in the first embodiment, at least one of the plurality of effects described below is produced.

(1) According to the first embodiment, the temperature measuring device 103 that measures the temperature in the substrate housing chamber 49 holds the airtightness between the mounting hole 101 a and the main body 200 outside the substrate housing chamber 49. Since the second cooling water circulation chamber 202 for cooling the O-ring 107 is provided, the O-ring 107 can be prevented from melting and the internal pressure of the substrate housing chamber 49 can be reliably maintained at a predetermined value. Therefore, it is possible to accurately measure the high temperature in the substrate storage chamber 49 in which the SiC epitaxial film is formed, and as a result, the temperature in the substrate storage chamber 49 can be accurately controlled.

(2) According to the first embodiment, the second cooling water circulation chamber 202 is formed in an annular shape following the shape of the O-ring 107, and is disposed close to the O-ring 107. Can be effectively cooled. Therefore, high temperature is prevented from being transmitted to the O-ring 107, and the O-ring 107 can be reliably prevented from melting.

(3) According to the first embodiment, the contacts 302a to 302c of the thermocouple wires 301a to 301c forming the temperature measuring device 103 are placed at different positions (h1 to h3) along the longitudinal direction of the protective tube 300. Therefore, the temperature in the vicinity of the lower part to the upper part of the boat 30 can be measured without unevenness. Therefore, it is possible to control the temperature in the substrate storage chamber 49 with high accuracy.

(4) By using the temperature measuring device 103 described in the first embodiment in the substrate processing step in the semiconductor device manufacturing method, one of the above-described effects can be obtained in the semiconductor device manufacturing method. There are the above effects.

(5) In the substrate manufacturing method for forming a SiC epitaxial film, the temperature measuring device 103 described in the first embodiment is used in the substrate processing step in the substrate manufacturing method for forming a SiC epitaxial film. Among the plurality of effects, one or more effects are achieved.

[Second Embodiment]
Next, a second embodiment of the present invention will be described in detail with reference to the drawings. Note that portions having the same functions as those of the first embodiment described above are denoted by the same reference numerals, and detailed description thereof is omitted. FIG. 8 is an explanatory view illustrating the detailed structure of the temperature measuring device according to the second embodiment.

The temperature measuring device 400 according to the second embodiment is different from the temperature measuring device 103 according to the first embodiment described above only in that a heat-resistant cover 410 is attached to the protective tube 300. The heat-resistant cover 410 is made of sapphire having a melting point higher than that of the protective tube 300 (made of silicon carbide) and excellent in heat resistance, and is formed in a bottomed cylindrical shape like the protective tube 300. The heat-resistant cover 410 is formed with a larger diameter than the protective tube 300 and covers the periphery of the protective tube 300 with a predetermined gap S therebetween. On the other hand, a fitting step portion 210 to which the base end portion of the heat-resistant cover 410 is fitted and fixed is provided on the outer peripheral side of the protective tube fitting recess 201a of the main body portion 200. Accordingly, the heat-resistant cover 410 can be installed straight along with the protective tube 300 on the same axis as the main body 200 by fitting and fixing the base end portion of the heat-resistant cover 410 to the fitting stepped portion 210. Since the heat-resistant cover 410 is provided, a protective tube made of other materials such as quartz can be used instead of the protective tube 300 made of silicon carbide. However, the heat resistant cover 410 is not limited to sapphire, and may be made of silicon carbide or the like according to the specifications of the temperature measuring device 400.

<Typical effects of the second embodiment>
As mentioned above, also in the technical idea demonstrated in 2nd Embodiment, there can exist an effect similar to 1st Embodiment mentioned above. In addition to this, in the second embodiment, at least one of the plurality of effects described below is produced.

(1) According to the second embodiment, since the heat-resistant cover 410 is provided, it is possible to provide the temperature measuring device 400 with more excellent heat resistance and to improve the reliability.

(2) According to the second embodiment, since the heat-resistant cover 410 is provided, the protective tube and thermocouple wire inside the cover can be made of an inexpensive one with reduced heat resistance.

[Third Embodiment]
Next, a third embodiment of the present invention will be described in detail with reference to the drawings. Note that portions having the same functions as those of the first embodiment described above are denoted by the same reference numerals, and detailed description thereof is omitted. FIG. 9 is an explanatory diagram for explaining an arrangement state of the temperature measuring device according to the third embodiment in the processing furnace.

In the third embodiment, the first, second, and third

temperature measuring devices

500, 510, and 520 are provided in place of the one temperature measuring device 103 as compared with the first embodiment described above. Only the point is different. Specifically, each temperature measuring device is associated with the first, second, and third

temperature control blocks

53a, 53b, and 53c provided between the heating body 48 and the heat insulating material 54 (see FIG. 3). 500, 510, and 520 have different length dimensions. That is, the first temperature measuring device 500 includes a first thermocouple wire 301a and a first contact 302a whose height position corresponds to h1 in correspondence with the first temperature control block 53a. The second temperature measuring device 510 includes a second thermocouple wire 301b and a second contact 302b whose height position corresponds to h2 corresponding to the second temperature control block 53b. The third temperature measuring device 520 includes a third thermocouple element 301c and a third contact 302c whose height position corresponds to h3, corresponding to the third temperature control block 53c.

However, in each of the

temperature measuring devices

500, 510, and 520 in the third embodiment, a heat resistant cover may be provided in the same manner as in the second embodiment.

<Typical effects of the third embodiment>
As mentioned above, also in the technical idea demonstrated in 3rd Embodiment, there can exist an effect similar to 1st Embodiment mentioned above. In addition to this, in the third embodiment, at least one of the plurality of effects described below is produced.

(1) According to the third embodiment, the first, second, and third

temperature measuring devices

500, 510 are associated with the first, second, and third

temperature control blocks

53a, 53b, and 53c. , 520, the contacts 302a to 302c can be arranged at a uniform distance from the temperature control blocks 53a to 53c. Therefore, it is possible to obtain temperature calibration data with higher accuracy and control the temperature in the substrate storage chamber 49 (see FIG. 3) with higher accuracy.

As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments. However, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say. For example, in each of the above embodiments, the “cooling mechanism” of the present invention is the second cooling water circulation chamber 202 in which the cooling water circulates. However, the present invention is not limited to this, and for example, a heat pump It is also possible to use a cooling mechanism using the like.

In each of the above embodiments, the film forming apparatus (substrate processing apparatus) for forming the SiC epitaxial film has been described as an example. However, the present invention is not limited to this, and is injected (supplied) from the gas supply port. The present invention can also be applied to other substrate processing apparatuses in which the reactive gas supply direction (horizontal direction) differs from the exhausted reactive gas ejection direction (vertical direction).

For example, when applied to a heat treatment apparatus (hereinafter referred to as SiC annealing apparatus) for annealing a SiC epitaxial film, the processing temperature in the SiC annealing apparatus is 1500 ° C. to 2000 ° C., which is a high temperature region, and therefore the present invention is applied. Therefore, more accurate temperature control is possible.

The present invention includes at least the following embodiments.

[Appendix 1]
A temperature measuring device for measuring a temperature in a substrate housing chamber of a substrate processing apparatus for processing a substrate,
A main body mounted in a mounting hole of a closing member for closing the opening side of the substrate housing chamber;
A protective tube provided integrally with the main body, and disposed inside the substrate housing chamber;
A thermocouple wire provided inside the protective tube and provided with a contact;
A cooling mechanism that is provided in the main body portion and cools a seal member that maintains airtightness between the mounting hole and the main body portion outside the substrate housing chamber;
Having a temperature measuring device.

[Appendix 2]
The temperature according to supplementary note 1, wherein the sealing member is an O-ring that fits into the main body, the cooling mechanism is formed in an annular shape along the shape of the O-ring, and a cooling water circulation chamber in which cooling water circulates is formed. Measuring instrument.

[Appendix 3]
The temperature measuring instrument according to appendix 1 or 2, wherein a heat-resistant cover is attached to the protective tube.

[Appendix 4]
The temperature measuring instrument according to appendix 3, wherein the heat-resistant cover is made of sapphire.

[Appendix 5]
Any one of appendices 1 to 4, wherein a plurality of sets of the thermocouple wires are provided inside the protective tube, and the contacts of the thermocouple wires are arranged at different positions along the longitudinal direction of the protective tube. The temperature measuring device according to one.

[Appendix 6]
A temperature measuring device for measuring a temperature in a substrate housing chamber of a substrate processing apparatus for processing a substrate,
A main body mounted in a mounting hole of a closing member for closing the opening side of the substrate housing chamber;
A protective tube provided integrally with the main body, and disposed inside the substrate housing chamber;
A thermocouple element provided inside the protective tube and provided with a contact;
A temperature measuring device in which a heat-resistant cover is attached to the protective tube.

[Appendix 7]
The temperature measuring instrument according to appendix 6, wherein the heat-resistant cover is made of sapphire.

[Appendix 8]
The temperature measuring instrument according to appendix 6 or 7, wherein a cooling mechanism is provided in the main body portion for cooling a sealing member that maintains airtightness between the mounting hole and the main body portion outside the substrate housing chamber.

[Appendix 9]
Any one of appendixes 6 to 8, wherein a plurality of sets of the thermocouple wires are provided inside the protective tube, and the contacts of the thermocouple wires are respectively arranged at different positions along the longitudinal direction of the protective tube. The temperature measuring device according to one.

[Appendix 10]
A temperature control method for performing temperature control in a substrate housing chamber of a substrate processing apparatus for processing a substrate by adjusting a temperature of a heating body by a controller,
A main body portion that is mounted in a mounting hole of a closing member that closes the opening side of the substrate housing chamber, a protective tube that is provided integrally with the main body portion and disposed inside the substrate housing chamber, and inside the protective tube A thermocouple element provided with a contact, provided in the main body, and having a cooling mechanism that cools a seal member that maintains an airtightness between the mounting hole and the main body outside the substrate housing chamber An indoor temperature measuring step of measuring the temperature in the substrate housing chamber using a temperature measuring device;
Using an outdoor temperature measuring device provided outside the substrate housing chamber, an outdoor temperature measuring step for measuring the temperature outside the substrate housing chamber;
A temperature calibration data calculation step for calculating temperature calibration data based on each temperature data obtained in the indoor temperature measurement step and the outdoor temperature measurement step;
A heating body temperature adjustment step of adjusting the temperature of the heating body based on the temperature calibration data obtained in the temperature calibration data calculation step and the current outdoor temperature data measured by the outdoor temperature measuring device. Temperature control method.

[Appendix 11]
The sealing member is an O-ring that fits into the main body, the cooling mechanism is formed in an annular shape along the shape of the O-ring, and a cooling water circulation chamber in which cooling water circulates is formed, and the indoor temperature measuring step Then, the temperature control method according to appendix 10, wherein the cooling water is circulated to the cooling water circulation chamber.

[Appendix 12]
The temperature control method according to appendix 10 or 11, wherein a heat-resistant cover is attached to the protective tube.

[Appendix 13]
The temperature control method according to appendix 12, wherein the heat-resistant cover is made of sapphire.

[Appendix 14]
Any one of appendixes 10 to 13, wherein a plurality of sets of the thermocouple wires are provided inside the protective tube, and the contacts of the thermocouple wires are arranged at different positions along the longitudinal direction of the protective tube. The temperature control method according to one.

[Appendix 15]
A semiconductor device manufacturing method for manufacturing a semiconductor device using a substrate processing apparatus for processing a substrate,
A main body portion mounted in a mounting hole of a closing member that closes the opening side of the substrate storage chamber for storing the substrate, a protective tube provided integrally with the main body portion and disposed inside the substrate storage chamber, the protection A thermocouple wire provided inside the tube and provided with a contact, and a seal member provided in the main body portion and for maintaining an airtightness between the mounting hole and the main body portion outside the substrate housing chamber are cooled. An indoor temperature measuring step of measuring the temperature in the substrate housing chamber using a temperature measuring device having a cooling mechanism;
Using an outdoor temperature measuring device provided outside the substrate housing chamber, an outdoor temperature measuring step for measuring the temperature outside the substrate housing chamber;
A temperature calibration data calculation step for calculating temperature calibration data based on each temperature data obtained in the indoor temperature measurement step and the outdoor temperature measurement step;
Based on the temperature calibration data obtained in the temperature calibration data calculation step and the current outdoor temperature data measured by the outdoor temperature measuring device, the heating body temperature for adjusting the temperature of the heating body for heating the substrate housing chamber The adjustment process;
A substrate processing step of supplying a reaction gas from a gas supply source into the substrate housing chamber and processing the substrate.

[Appendix 16]
The sealing member is an O-ring that fits into the main body, the cooling mechanism is formed in an annular shape along the shape of the O-ring, and a cooling water circulation chamber in which cooling water circulates is formed, and the indoor temperature measuring step Then, the manufacturing method of the semiconductor device of Additional remark 15 which circulates the said cooling water to the said cooling water circulation chamber.

[Appendix 17]
18. The method for manufacturing a semiconductor device according to appendix 15 or 16, wherein a heat-resistant cover is attached to the protective tube.

[Appendix 18]
18. The method for manufacturing a semiconductor device according to appendix 17, wherein the heat resistant cover is made of sapphire.

[Appendix 19]
Any one of appendixes 15 to 19, wherein a plurality of sets of the thermocouple wires are provided inside the protective tube, and the contacts of the thermocouple wires are arranged at different positions along the longitudinal direction of the protective tube. A method of manufacturing a semiconductor device according to one of the above.

[Appendix 20]
A substrate processing apparatus for processing a substrate,
A substrate storage chamber for storing the substrate;
An outdoor temperature measuring device that is provided outside the substrate housing chamber and measures the temperature outside the substrate housing chamber;
A gas nozzle that is provided inside the substrate storage chamber and supplies a reactive gas toward the substrate;
A closing member for closing the opening side of the substrate housing chamber;
A temperature measuring device mounted on the closing member and measuring the temperature in the substrate housing chamber,
The temperature measuring device includes a main body portion that is attached to the attachment hole of the closing member;
A protective tube provided integrally with the main body, and disposed inside the substrate housing chamber;
A thermocouple wire provided inside the protective tube and provided with a contact;
A substrate processing apparatus, comprising: a cooling mechanism that cools a sealing member that is provided in the main body portion and maintains an airtightness between the mounting hole and the main body portion outside the substrate housing chamber.

[Appendix 21]
The substrate according to appendix 20, wherein the sealing member is an O-ring that fits into the main body, the cooling mechanism is formed in an annular shape that follows the shape of the O-ring, and a cooling water circulation chamber in which cooling water circulates is formed. Processing equipment.

[Appendix 22]
The substrate processing apparatus according to appendix 20 or 21, wherein a heat-resistant cover is attached to the protective tube.

[Appendix 23]
The substrate processing apparatus according to appendix 22, wherein the heat resistant cover is made of sapphire.

[Appendix 24]
Any one of appendixes 20 to 23, wherein a plurality of sets of the thermocouple wires are provided inside the protective tube, and the contacts of the thermocouple wires are arranged at different positions along the longitudinal direction of the protective tube. The substrate processing apparatus as described in one.

[Appendix 25]
A substrate manufacturing method for manufacturing a substrate using a substrate processing apparatus for processing a substrate,
A main body portion mounted in a mounting hole of a closing member that closes the opening side of the substrate storage chamber for storing the substrate, a protective tube provided integrally with the main body portion and disposed inside the substrate storage chamber, the protection A thermocouple wire provided inside the tube and provided with a contact, and a seal member provided in the main body portion and for maintaining an airtightness between the mounting hole and the main body portion outside the substrate housing chamber are cooled. An indoor temperature measuring step of measuring the temperature in the substrate housing chamber using a temperature measuring device having a cooling mechanism;
Using an outdoor temperature measuring device provided outside the substrate housing chamber, an outdoor temperature measuring step for measuring the temperature outside the substrate housing chamber;
A temperature calibration data calculation step for calculating temperature calibration data based on each temperature data obtained in the indoor temperature measurement step and the outdoor temperature measurement step;
Based on the temperature calibration data obtained in the temperature calibration data calculation step and the current outdoor temperature data measured by the outdoor temperature measuring device, the heating body temperature for adjusting the temperature of the heating body for heating the substrate housing chamber The adjustment process;
A substrate processing step of supplying a reaction gas from a gas supply source into the substrate chamber and processing the substrate.

The present invention can be widely used in manufacturing industries for manufacturing semiconductor devices (semiconductor devices), substrates for forming SiC epitaxial films, and the like.

DESCRIPTION OF SYMBOLS 10 ... Semiconductor manufacturing apparatus (substrate processing apparatus), 12 ... Housing, 14 ... Wafer (substrate), 16 ... Pod, 16a ... Lid, 18 ... Pod stage, 20 ... Pod transfer device, 22 ... Pod storage shelf, 24 ... Pod opener, 26 ... substrate number detector, 28 ... substrate transfer machine, 30 ... boat, 32 ... arm, 34 ... boat insulation, 36 ... manifold, 40 ... processing furnace, 42 ... reaction tube, 44 ... reaction chamber, 48 ... heating body, 49 ... substrate housing chamber, 50 ... induction coil, 52 ... temperature controller, 53a ... first temperature control block (outdoor temperature measuring device), 53b ... second temperature control block (outdoor temperature) Measuring device), 53c ... third temperature control block (outdoor temperature measuring device), 54 ... heat insulating material, 55 ... outer heat insulating wall, 56 ... viewport, 57 ... reflection mirror (outdoor temperature measuring device), 58 ... Magnetic sea 59 ... Radiation thermometer (outdoor temperature measuring device), 60 ... first gas supply nozzle (gas nozzle), 60a ... base end portion, 68 ... first gas supply port, 70 ... second gas supply nozzle (gas nozzle), 70a ... Base end portion, 72 ... Second gas supply port, 78 ... Gas flow rate control unit, 90 ... First gas exhaust port, 98 ... Pressure control unit, 101 ... Seal cap (blocking member), 101a ... Mounting hole, 101b DESCRIPTION OF SYMBOLS ... Adapter, 101c ... 1st cooling water circulation chamber, 103 ... Temperature measuring device, 104 ... Rotation mechanism, 105 ... Cooling water supply apparatus, 105a ... Flowing water pipe, 106 ... Rotating shaft, 107 ... O-ring (seal member), 108 Drive control unit, 150 ... main control unit, 152 ... controller, 200 ... main body, 200a ... insertion hole, 200b ... sealing part, 201 ... mounting cylinder part, 201a ... protective tube fitting recess, 202 ... second cooling Circulation chamber (cooling mechanism, cooling water circulation chamber), 203 ... cooling section, 204 ... stepped portion, 210 ... fitting stepped portion, 210a ... first gas supply source, 210b ... second gas supply source, 210c ... third gas supply 210d ... fourth gas supply source, 210e ... fifth gas supply source, 211a to 211e ... MFC, 212a to 212e ... valve, 213a to 213d ... gas piping, 214 ... APC valve, 215 ... gas cooler, 220 ... vacuum Exhaust device 222 ... first gas line 230 ... gas exhaust pipe 240 ... third gas line 260 ... second gas line 300 ... protection pipe 301a ... first thermocouple wire 301b ... second thermocouple Element wire 301c 3rd thermocouple element 302a 1st contact 302b 2nd contact 302c 3rd contact 303a 1st connector 303b 2nd connector 30 3c ... 3rd connector, 360 ... 3rd gas supply port, 390 ... 2nd gas exhaust port, 400 ... Temperature measuring device, 410 ... Heat-resistant cover, 500 ... 1st temperature measuring device, 510 ... 2nd temperature measuring device, 520 ... Third temperature measuring device

Claims

A temperature measuring device for measuring a temperature in a substrate housing chamber of a substrate processing apparatus for processing a substrate,
A main body mounted in a mounting hole of a closing member for closing the opening side of the substrate housing chamber;
A protective tube provided integrally with the main body, and disposed inside the substrate housing chamber;
A thermocouple wire provided inside the protective tube and provided with a contact;
A cooling mechanism that is provided in the main body portion and cools a seal member that maintains airtightness between the mounting hole and the main body portion outside the substrate housing chamber;
A temperature measuring device comprising:
The seal member is an O-ring that fits into the main body, and the cooling mechanism is formed in an annular shape along the shape of the O-ring, and is a cooling water circulation chamber in which cooling water circulates. Temperature measuring instrument.
The temperature measuring instrument according to claim 1, wherein a heat-resistant cover is attached to the protective tube.
The temperature measuring device according to claim 3, wherein the heat-resistant cover is made of sapphire.
2. The temperature according to claim 1, wherein a plurality of sets of the thermocouple wires are provided inside the protective tube, and the contacts of the thermocouple wires are arranged at different positions along the longitudinal direction of the protective tube. Measuring instrument.
A substrate processing apparatus for processing a substrate,
A substrate storage chamber for storing the substrate;
An outdoor temperature measuring device that is provided outside the substrate housing chamber and measures the temperature outside the substrate housing chamber;
A gas nozzle that is provided inside the substrate storage chamber and supplies a reactive gas toward the substrate;
A closing member for closing the opening side of the substrate housing chamber;
A temperature measuring device mounted on the closing member and measuring the temperature in the substrate housing chamber,
The temperature measuring instrument is
A main body mounted in the mounting hole of the closing member;
A protective tube provided integrally with the main body, and disposed inside the substrate housing chamber;
A thermocouple wire provided inside the protective tube and provided with a contact;
A cooling mechanism that is provided in the main body portion and cools a seal member that maintains airtightness between the mounting hole and the main body portion outside the substrate housing chamber;
A substrate processing apparatus comprising:
The said sealing member is made into the O-ring fitted to the said main-body part, the said cooling mechanism is formed in the cyclic | annular form along the shape of the said O-ring, and it is set as the cooling water circulation chamber which circulates a cooling water inside. Substrate processing equipment.
6. The substrate processing apparatus according to claim 5, wherein a heat-resistant cover is attached to the protective tube.
The substrate processing apparatus according to claim 7, wherein the heat-resistant cover is made of sapphire.
The substrate according to claim 5, wherein a plurality of sets of the thermocouple wires are provided inside the protective tube, and the contacts of the thermocouple wires are arranged at different positions along the longitudinal direction of the protective tube. Processing equipment.
A temperature control method for performing temperature control in a substrate housing chamber of a substrate processing apparatus for processing a substrate by adjusting a temperature of a heating body by a controller,
A main body portion that is mounted in a mounting hole of a closing member that closes the opening side of the substrate housing chamber, a protective tube that is provided integrally with the main body portion and disposed inside the substrate housing chamber, and inside the protective tube A thermocouple element provided with a contact, provided in the main body, and having a cooling mechanism that cools a seal member that maintains an airtightness between the mounting hole and the main body outside the substrate housing chamber An indoor temperature measuring step of measuring the temperature in the substrate housing chamber using a temperature measuring device;
Using an outdoor temperature measuring device provided outside the substrate housing chamber, an outdoor temperature measuring step for measuring the temperature outside the substrate housing chamber;
A temperature calibration data calculation step for calculating temperature calibration data based on each temperature data obtained in the indoor temperature measurement step and the outdoor temperature measurement step;
Based on the temperature calibration data obtained in the temperature calibration data calculation step and the current outdoor temperature data measured by the outdoor temperature measuring device, a heating body temperature adjustment step of adjusting the temperature of the heating body,
A temperature control method comprising:
The sealing member is an O-ring that fits into the main body, the cooling mechanism is formed in an annular shape along the shape of the O-ring, and a cooling water circulation chamber in which cooling water circulates is formed, and the indoor temperature measuring step The method for manufacturing a semiconductor device according to claim 11, wherein the cooling water is circulated through the cooling water circulation chamber.
The semiconductor according to claim 11, wherein a plurality of sets of the thermocouple wires are provided inside the protective tube, and the contact points of the thermocouple wires are respectively arranged at different positions along the longitudinal direction of the protective tube. Device manufacturing method.
A semiconductor device manufacturing method for manufacturing a semiconductor device using a substrate processing apparatus for processing a substrate,
A main body portion mounted in a mounting hole of a closing member that closes the opening side of the substrate storage chamber for storing the substrate, a protective tube provided integrally with the main body portion and disposed inside the substrate storage chamber, the protection A thermocouple wire provided inside the tube and provided with a contact, and a seal member provided in the main body portion and for maintaining an airtightness between the mounting hole and the main body portion outside the substrate housing chamber are cooled. An indoor temperature measuring step of measuring the temperature in the substrate housing chamber using a temperature measuring device having a cooling mechanism;
Using an outdoor temperature measuring device provided outside the substrate housing chamber, an outdoor temperature measuring step for measuring the temperature outside the substrate housing chamber;
A temperature calibration data calculation step for calculating temperature calibration data based on each temperature data obtained in the indoor temperature measurement step and the outdoor temperature measurement step;
Based on the temperature calibration data obtained in the temperature calibration data calculation step and the current outdoor temperature data measured by the outdoor temperature measuring device, the heating body temperature for adjusting the temperature of the heating body for heating the substrate housing chamber The adjustment process;
A substrate processing step of supplying a reactive gas from a gas supply source into the substrate storage chamber and processing the substrate;
A method for manufacturing a semiconductor device, comprising: