JP2013058742A5 - - Google Patents

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JP2013058742A5
JP2013058742A5 JP2012175508A JP2012175508A JP2013058742A5 JP 2013058742 A5 JP2013058742 A5 JP 2013058742A5 JP 2012175508 A JP2012175508 A JP 2012175508A JP 2012175508 A JP2012175508 A JP 2012175508A JP 2013058742 A5 JP2013058742 A5 JP 2013058742A5
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semiconductor
wavelength
irradiation light
arbitrary
amount
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JP2012175508A
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JP2013058742A (ja
JP5925634B2 (ja
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JP2012175508A 2011-08-18 2012-08-08 半導体の欠陥評価方法 Expired - Fee Related JP5925634B2 (ja)

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JP2012175508A JP5925634B2 (ja) 2011-08-18 2012-08-08 半導体の欠陥評価方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011178824 2011-08-18
JP2011178824 2011-08-18
JP2012175508A JP5925634B2 (ja) 2011-08-18 2012-08-08 半導体の欠陥評価方法

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JP2013058742A JP2013058742A (ja) 2013-03-28
JP2013058742A5 true JP2013058742A5 (enExample) 2015-07-02
JP5925634B2 JP5925634B2 (ja) 2016-05-25

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JP2012175508A Expired - Fee Related JP5925634B2 (ja) 2011-08-18 2012-08-08 半導体の欠陥評価方法

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014021442A1 (en) * 2012-08-03 2014-02-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor stacked film and semiconductor device
WO2018199020A1 (ja) * 2017-04-27 2018-11-01 株式会社 東芝 ナノ金属化合物粒子およびそれを用いた塗料並びに膜、膜の製造方法、ナノ金属化合物粒子の製造方法
CN111855705B (zh) * 2020-07-28 2023-03-28 哈尔滨工业大学 电子器件中氧化物层辐射诱导缺陷的检测方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
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JPH11317538A (ja) * 1998-02-17 1999-11-16 Canon Inc 光導電性薄膜および光起電力素子
JP4363368B2 (ja) * 2005-06-13 2009-11-11 住友電気工業株式会社 化合物半導体部材のダメージ評価方法、及び化合物半導体部材の製造方法

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