JP2013058599A - Electrode for organic semiconductor element and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To inexpensively provide an electrode for an organic semiconductor element, which is useful for manufacturing an organic semiconductor element having high field-effect mobility, and an organic semiconductor element including the electrode for an organic semiconductor element.SOLUTION: An organic semiconductor element 100 includes a substrate 1, a gate electrode 4, a gate insulating film 3, an organic semiconductor layer 2, a source electrode 5, a drain electrode 6, and a pattern region of a self-assembled monolayer provided on the gate insulating film. Each of the source electrode and the drain electrode is formed of a thin film containing graphene nanoribbons, which are provided in an electrode forming region 20 outside the pattern region of the self-assembled monolayer.

Description

  The present invention relates to an electrode for an organic semiconductor element, a method for producing the same, and an organic semiconductor element having such an electrode.

  As a semiconductor element having a semiconductor thin film, an organic semiconductor element having an organic thin film containing an organic semiconductor material has attracted attention. In manufacturing an organic semiconductor element, an electrode, wiring, and the like are required in addition to an organic semiconductor material. In order to form electrodes, wirings, and the like by a coating method, nanometal ink containing nanoparticles such as gold and silver has been developed and used (see Non-Patent Document 1).

T. Sekitani, Y. Noguchi, U. Zshieschang, H. Klauk, and T. Someya, Proc. Nat. Acad. Sci. 105, 4976 (2008).

  However, in the above conventional technique, although the field effect mobility is high, a metal such as gold or silver is used, so that the manufacturing cost of the organic semiconductor element increases.

  Then, this invention aims at providing the organic-semiconductor element which can manufacture the organic-semiconductor element with sufficient field effect mobility cheaply, and the organic-semiconductor element which has this organic-semiconductor-element electrode. .

The present invention provides the following [1] to [10].
[1] An electrode for an organic semiconductor element comprising a thin film containing graphene nanoribbons provided in an electrode formation region outside the pattern region of the self-assembled monomolecular film.
[2] A step of forming a pattern region of a self-assembled monomolecular film provided in a partial region outside the electrode formation region on the substrate;
Applying a coating solution containing graphene oxide nanoribbons on the substrate, and arranging the coating solution in a self-aligned manner in an electrode formation region outside the pattern region of the self-assembled monolayer; and
Forming a thin film containing graphene nanoribbons by reducing the graphene oxide nanoribbons, and a method for producing an electrode for an organic semiconductor element.
[3] An organic thin film transistor having a substrate, a gate electrode, a gate insulating film, an organic semiconductor layer, a source electrode and a drain electrode,
A pattern region of a self-assembled monolayer provided on the gate insulating film;
The organic thin-film transistor which has the said source electrode and drain electrode which consist of a thin film containing the graphene nano ribbon provided in the electrode formation area | region which is outside the pattern area | region of the said self-assembled monolayer.
[4] A method for producing an organic thin film transistor having a substrate, a gate electrode, a gate insulating film, an organic semiconductor, a source electrode and a drain electrode,
Forming a pattern region of a self-assembled monolayer outside the electrode formation region set on the gate insulating film on the substrate;
Applying a coating solution containing graphene oxide nanoribbons on the substrate, and arranging the coating solution in a self-aligned manner in an electrode formation region outside the pattern region of the self-assembled monolayer; and
Forming the source electrode and the drain electrode made of a thin film containing graphene nanoribbons by reducing the graphene oxide nanoribbons.
[5] In the step of forming the source and drain electrodes, the graphene nanoribbons contained in the coating liquid are reduced to graphene nanoribbons by heating in vacuum to form the thin film containing graphene nanoribbons. The method for producing an organic thin film transistor according to [4], wherein the source electrode and the drain electrode are formed.
[6] A planar light source having the organic thin film transistor according to [3].
[7] A display device comprising the organic thin film transistor according to [3].
[8] An anode, a cathode, and a layer containing an organic semiconductor provided between the anode and the cathode,
A photoelectric conversion element, wherein at least one of the anode and the cathode is an electrode for an organic semiconductor element according to [1].
[9] A solar cell module having the photoelectric conversion element according to [8].
[10] An image sensor having the photoelectric conversion element according to [8].

  If the electrode for organic semiconductor elements of this invention is used for manufacture of an organic semiconductor element, an organic semiconductor element with sufficient field effect mobility can be obtained at low cost.

FIG. 1 is a schematic cross-sectional view according to a first embodiment of an organic thin film transistor. FIG. 2 is a schematic cross-sectional view according to a second embodiment of the organic thin film transistor. FIG. 3 is a schematic cross-sectional view according to a third embodiment of the organic thin film transistor. FIG. 4 is a schematic cross-sectional view according to a fourth embodiment of the organic thin film transistor. FIG. 5 is a schematic cross-sectional view according to a fifth embodiment of the organic thin film transistor. FIG. 6 is a schematic cross-sectional view according to a sixth embodiment of the organic thin film transistor. FIG. 7 is a schematic cross-sectional view according to a seventh embodiment of the organic thin film transistor. FIG. 8 is a schematic cross-sectional view of a solar cell. FIG. 9 is a schematic cross-sectional view according to the first embodiment of the optical sensor. FIG. 10 is a schematic cross-sectional view according to the second embodiment of the optical sensor. FIG. 11 is a schematic cross-sectional view according to the third embodiment of the optical sensor. FIG. 12 is a schematic cross-sectional view of an organic electroluminescence element. FIG. 13 is a schematic cross-sectional view of an organic thin film transistor fabricated in the example. FIG. 14 is a photograph showing an AFM image of graphene oxide nanoribbons produced in the examples. FIG. 15 is a Raman spectrum of the graphene oxide nanoribbon produced in the example. FIG. 16 is an XPS spectrum of the graphene nanoribbon produced in the example. FIG. 17A is a schematic cross-sectional view (1) for explaining an electrode manufacturing process using a self-assembled monolayer. FIG. 17B is a schematic cross-sectional view (2) for explaining an electrode manufacturing process using a self-assembled monolayer. FIG. 17C is a schematic cross-sectional view (3) for explaining the electrode manufacturing process using the self-assembled monolayer. FIG. 17D is a schematic cross-sectional view (4) for explaining the electrode manufacturing process using the self-assembled monolayer. FIG. 17E is a schematic cross-sectional view (5) for explaining an electrode manufacturing process using a self-assembled monolayer.

  The electrode for organic semiconductor elements of the present invention comprises a thin film containing graphene nanoribbons provided in an electrode formation region outside the pattern region of the self-assembled monolayer.

  Further, the method for producing an electrode for an organic semiconductor element of the present invention comprises a step of forming a pattern region of a self-assembled monolayer provided in a partial region outside the electrode formation region, and a coating liquid containing graphene oxide nanoribbons The step of applying and arranging the coating solution in a self-aligned manner in the electrode formation region outside the pattern region of the self-assembled monolayer, and the step of forming a thin film containing graphene nanoribbons by reducing the graphene oxide nanoribbons Including.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, each figure has shown only the shape of the component, the magnitude | size, and arrangement | positioning to such an extent that an invention can be understood. The present invention is not limited to the following description, and each component can be appropriately changed without departing from the gist of the present invention. In each figure used for the following description, the same elements are denoted by the same reference numerals, and overlapping descriptions may be omitted. Further, the configuration according to the embodiment of the present invention is not necessarily manufactured or used in the arrangement shown in the drawing.

[Production of graphene oxide nanoribbons]
Graphene oxide nanoribbons (GONR) can be produced, for example, by oxidizing multi-walled carbon nanotubes (MWNT) by the Modified Hummers method (DV Kosynkin, AL Higginbotham, A. Sinitskii, JR Lomeda, A. Dimiev, BK Price). , and JM Tour: Nature 458 (2009) 872.). The Modified Hummers method is a method of obtaining graphene oxide nanoribbons by oxidizing multi-walled carbon nanotubes with potassium permanganate in concentrated sulfuric acid.

A method for manufacturing the graphene oxide nanoribbon will be specifically described.
First, multi-walled carbon nanotubes are added to concentrated sulfuric acid and stirred. Next, potassium permanganate is added and stirred while heating. After standing to cool, it is gradually added to water containing hydrogen peroxide on an ice bath to obtain a suspension. The resulting suspension is filtered under reduced pressure. The obtained solid is dissolved in water, stirred, and irradiated with ultrasonic waves. The resulting solution is again filtered under reduced pressure. Graphene oxide nanoribbons can be obtained as a solid by repeating ultrasonic irradiation and filtration and vacuum drying.

[Reduction of graphene oxide nanoribbons]
Examples of methods for reducing graphene oxide nanoribbons to graphene nanoribbons (GNR) include oxygen desorption in a vacuum or in an inert gas atmosphere such as hydrogen gas or argon gas (MJ McAllister, JL. Li, DH Adamson, HC Schniepp, AA Abdala, J, Liu, MH Alonso, DL, Milius, R. Car, RK Prud'homme, and A. Aksay, Chem. Mater., 19, 4396 (2007).), And The chemical reduction method using a reducing reagent is mentioned. Examples of the chemical reduction method include reduction with hydrazine (see JR Lomeda, CD Doyle, DV Kosynkin, WF Hwang, JM Tour, J. Am. Chem. Soc., 130, 16201 (2008)).

A method for producing the graphene nanoribbon will be specifically described.
Preparation of graphene nanoribbons, that is, reduction of graphene oxide nanoribbons can be performed by, for example, the following method (1) or (2).

(1) Heat reduction method: A substrate coated with a solution containing graphene oxide nanoribbons is heated. In this heat reduction, the heating temperature is preferably 150 ° C to 300 ° C, more preferably 200 ° C to 250 ° C, and further preferably 220 ° C to 240 ° C. In this heat reduction, the heating time is preferably 1 to 20 hours, more preferably 5 to 15 hours.
(2) Method of reducing hydrazine: A solution obtained by applying a solution containing graphene oxide nanoribbons to a substrate, adding hydrazine monohydrate to the graphene oxide nanoribbons contained in the solution applied to the substrate, and reacting them. The solvent is distilled off.

[Thin film containing graphene nanoribbons]
Here, an example of a method for forming a thin film containing graphene nanoribbons will be described with reference to FIGS. 17A, 17B, 17C, 17D, and 17E. FIG. 17A is a schematic cross-sectional view (1) for explaining an electrode manufacturing process using a self-assembled monolayer. FIG. 17B is a schematic cross-sectional view (2) for explaining an electrode manufacturing process using a self-assembled monolayer. FIG. 17C is a schematic cross-sectional view (3) for explaining the electrode manufacturing process using the self-assembled monolayer. FIG. 17D is a schematic cross-sectional view (4) for explaining the electrode manufacturing process using the self-assembled monolayer. FIG. 17E is a schematic cross-sectional view (5) for explaining an electrode manufacturing process using a self-assembled monolayer.

  A method for forming a thin film (electrode) containing graphene nanoribbons includes a step of forming a pattern region of a self-assembled monomolecular film provided in a partial region outside the electrode formation region on a substrate, and a coating containing a graphene oxide nanoribbon. A process liquid is applied on the substrate, and the process of arranging the coating liquid in a self-aligned manner outside the pattern area of the self-assembled monolayer and the graphene oxide nanoribbons are reduced by reducing the graphene oxide nanoribbons. Forming a containing thin film.

  As shown in FIG. 17A, a substrate 1 on which a thin film containing graphene nanoribbons is to be formed is prepared.

  As shown in FIG. 17B, a self-assembled monolayer is formed on the main surface of the substrate 1. Examples of the material of the self-assembled monolayer include ODTS (octadecyltrichlorosilane) and HMDS (1,1,1,3,3,3-hexamethyldisilazane). Hereinafter, (B1) a process of forming a self-assembled monolayer using ODTS (ODTS treatment) and (B2) a process of forming a self-assembled monolayer using HMDS (HMDS treatment) will be described.

(B1) ODTS treatment: Substrate 1 is immersed in a toluene solution of ODTS. This step is, for example, a step of immersing the substrate 1 in a toluene solution of ODTS in an argon gas atmosphere. Next, the substrate 1 is taken out and cleaned. This step is, for example, a step of ultrasonically cleaning the substrate 1 using toluene, then changing to acetone, and further ultrasonically cleaning. Finally, the substrate 1 is dried by heating, for example, to form an ODTS self-assembled monolayer 40 on the main surface of the substrate 1.
(B2) HMDS treatment: HMDS liquid is dropped on the main surface of the substrate 1 and heated. Thereafter, the substrate 1 taken out is washed by, for example, ultrasonic irradiation, and then dried to form the HMDS self-assembled monolayer 40.

  As shown in FIG. 17C, an exposure process is performed using a shadow mask 50 on the substrate 1 having the self-assembled monolayer 40 after the HMDS process or the ODTS process. The shadow mask 50 has an opening that exposes the partial region 1A (electrode formation region) of the substrate 1 and has a shape that can cover the other partial region 1B. The exposure process is, for example, ozone UV irradiation. By this step, patterning for removing the hydrophobic alkyl group in the exposed partial region 1A of the substrate 1 can be performed. By this patterning, only the partial region 1A can be made hydrophilic and the partial region 1B can be made hydrophobic.

  As shown in FIG. 17D, a coating liquid 60 (sometimes referred to as ink) is prepared, and the coating liquid 60 is supplied onto the substrate 1 having the patterned self-assembled monolayer 40.

  The coating liquid 60 can be formed by dispersing graphene oxide nanoribbons in a medium (dispersion medium). Examples of the dispersion medium include water, methanol, ethanol, N, N-dimethylformamide (DMF), and a mixed solvent thereof.

  The supply of the coating liquid 60 can be performed by a coating method such as a printing method. Examples of suitable coating methods include spin coating, casting, micro gravure coating, gravure coating, bar coating, roll coating, wire bar coating, dip coating, spray coating, screen printing, Examples include a flexographic printing method, an offset printing method, and an inkjet printing method.

  Since the supplied coating liquid 60 is repelled in the partial region 1B which is a hydrophobic region, it is arranged in a self-aligned manner only in the partial region 1A which is a hydrophilic region.

  As shown in FIG. 17E, the pattern region of the supplied coating liquid 60, that is, the substrate 1 to which the ink is supplied (applied) is subjected to a predetermined treatment to reduce the graphene oxide nanoribbons contained in the ink. By forming a graphene nanoribbon, an electrode composed of a thin film containing the graphene nanoribbon is formed.

Hereinafter, the process of forming the source electrode 5 and the drain electrode 5 will be described. The source electrode 5 and the drain electrode 6 can be manufactured by the following processes, for example.
The coating liquid 60 that is an aqueous solution containing graphene oxide nanoribbons heats the substrate 1 arranged in a self-aligned manner in the electrode formation region that is the partial region 1A, thereby reducing the graphene oxide nanoribbons to form graphene nanoribbons A source electrode 5 and a drain electrode 6 made of a thin film containing graphene nanoribbons are prepared.

[Organic semiconductor devices]
A thin film containing graphene nanoribbons according to a preferred embodiment can give and receive charges generated by injection of charges into an organic thin film including an organic semiconductor, high electrical conductivity, or light absorption. Therefore, taking advantage of these characteristics, the thin film containing graphene nanoribbons can be applied to various organic semiconductor elements such as organic thin film transistors, organic electroluminescent elements, and photoelectric conversion elements using the thin film as an electrode. Hereinafter, these organic semiconductor elements will be described.
In the following description, there may be a mode in which a constituent element such as a substrate that the organic semiconductor element may have also serves as another constituent element such as a gate electrode. In this case, as long as they are functionally similar, the aspect having the constituent elements configured integrally and the aspect having two or more constituent elements can be interchanged. The embodiment having the same can be equated with the embodiment having two or more components.

(Organic thin film transistor)
As an example of the organic thin film transistor using the thin film containing the graphene nanoribbon described above, a source electrode and a drain electrode, an organic semiconductor layer (that is, an active layer) serving as a current path between these electrodes, and the current path are passed. Examples include a structure having a gate electrode that controls the amount of current, and the source electrode and the drain electrode are formed of a thin film containing the graphene nanoribbon described above. Examples of such organic thin film transistors include field effect organic thin film transistors and electrostatic induction organic thin film transistors.

A field-effect organic thin film transistor includes a source electrode and a drain electrode, an organic semiconductor layer serving as a current path between them, a gate electrode that controls the amount of current passing through the current path, and a gap between the organic semiconductor layer and the gate electrode. It is preferable to have an insulating layer (that is, a gate insulating film) to be disposed.
In particular, the source electrode and the drain electrode are preferably provided in contact with the organic semiconductor layer, and the gate electrode is preferably provided with an insulating layer in contact with the organic semiconductor layer interposed therebetween. In the field effect organic thin film transistor, the organic semiconductor layer is constituted by an organic thin film containing an organic semiconductor.

  The electrostatic induction type organic thin film transistor has a source electrode and a drain electrode, an organic semiconductor layer serving as a current path between them, and a gate electrode for controlling an amount of current passing through the current path, and the gate electrode is in the organic semiconductor layer. Is preferably provided. In particular, the source electrode, the drain electrode, and the gate electrode provided in the organic semiconductor layer are preferably provided in contact with the organic semiconductor layer. Here, the gate electrode may have any structure as long as a current path flowing from the source electrode to the drain electrode is formed and the amount of current flowing through the current path can be controlled by a voltage applied to the gate electrode. An example of the configuration of the gate electrode is a comb electrode. Also in the electrostatic induction type organic thin film transistor, the organic semiconductor layer is constituted by an organic thin film containing an organic semiconductor.

  With reference to FIG. 1, 1st Embodiment of an organic thin-film transistor (field effect type organic thin-film transistor) is described. FIG. 1 is a schematic cross-sectional view according to a first embodiment of an organic thin film transistor.

  An organic thin film transistor 100 shown in FIG. 1 is a partial region 1A set on a main surface of a substrate 1 on which a source electrode and a drain electrode are formed so as to be spaced apart from the substrate 1 at a predetermined interval. The source electrode 5 and the drain electrode 6 formed in the electrode formation region 20, the organic semiconductor layer 2 formed on the substrate 1 so as to cover the source electrode 5 and the drain electrode 6, and the organic semiconductor layer 2. The source electrode 5 and the drain electrode 6 when viewed from the thickness direction of the substrate 1 so as to cover the insulating layer 3 and the region of the insulating layer 3 between the source electrode 5 and the drain electrode 6 on the insulating layer 3. And the gate electrode 4 formed on the insulating layer 3 in the electrode forming region 20 which is the partial region 3A set in the insulating layer 3 where the gate electrode is formed.

  A second embodiment of the organic thin film transistor (field effect organic thin film transistor) will be described with reference to FIG. FIG. 2 is a schematic sectional view according to the second embodiment of the organic thin film transistor. An organic thin film transistor 110 shown in FIG. 2 includes a substrate 1, a source electrode 5 formed in an electrode formation region 20 which is a partial region 1A set on the main surface of the substrate 1 on which the source electrode is formed, and a source electrode 5 A partial region 2A set in the organic semiconductor layer 2 formed on the substrate and the source electrode 51 so as to cover the source electrode 5 and the organic semiconductor layer 2 in which the drain electrode is formed so as to be separated from the source electrode 5 at a predetermined interval. The drain electrode 6 formed in the electrode forming region 20, the insulating layer 3 formed on the organic semiconductor layer 2 and the drain electrode 6, and the region of the insulating layer 3 between the source electrode 5 and the drain electrode 6 An electrode formation region 2 which is a partial region 3A set in the insulating layer 3 where the gate electrode is formed across the source electrode 5 and the drain electrode 6 when viewed from the thickness direction of the substrate 1 so as to cover Having a gate electrode 4 formed.

  With reference to FIG. 3, a third embodiment of an organic thin film transistor (field effect organic thin film transistor) will be described. FIG. 3 is a schematic cross-sectional view according to a third embodiment of the organic thin film transistor. An organic thin film transistor 120 shown in FIG. 3 covers the substrate 1, the gate electrode 4 formed in the electrode formation region 20 that is the partial region 1 </ b> A set on the substrate 1 on which the gate electrode is formed, and the gate electrode 4. When the gate electrode 4 is viewed from the thickness direction of the substrate 1 so as to partially cover regions of the insulating layer 3 formed on the substrate 1 and the insulating layer 3 on which the gate electrode 4 is formed below, respectively. A source electrode 5 and a drain electrode 6 formed so as to be spaced apart from each other by an electrode forming region 20 which is a partial region 3A set in the insulating layer 3 where the source electrode and the drain electrode are formed. An organic semiconductor layer 2 formed on the insulating layer 3 across the source electrode 5 and the drain electrode 6 so as to partially cover the electrode 5 and the drain electrode 6.

  A fourth embodiment of an organic thin film transistor (field effect organic thin film transistor) will be described with reference to FIG. FIG. 4 is a schematic cross-sectional view according to a fourth embodiment of the organic thin film transistor.

  An organic thin film transistor 130 shown in FIG. 4 covers the substrate 1, the gate electrode 4 formed in the electrode formation region 20 that is the partial region 1 </ b> A set on the substrate 1 on which the gate electrode is formed, and the gate electrode 4. The insulating layer 3 formed on the substrate 1 and the gate electrode 4 and the source electrode so as to partially cover the region of the insulating layer 3 so as to straddle the gate electrode 4 when viewed from the thickness direction of the substrate 1. The source electrode 5 formed in the electrode forming region 20 which is the partial region 3A set in the insulating layer 3 is insulated so as to partially cover the source electrode 5 and to expose a part of the insulating layer 3 An organic semiconductor layer 2 formed on the layer 3, and a part of the organic semiconductor layer 2 and a part of the insulating film 3 so as to straddle the gate electrode 4 when viewed from the thickness direction of the substrate 1, and a drain electrode Organic half formed A body layer 2 and set to the insulating layer 3 subregion 2A, a drain electrode 6 formed so as to be separated at a is the electrode formation region 20 on the source electrode 5 at a predetermined distance 3A, the.

  With reference to FIG. 5, a fifth embodiment of an organic thin film transistor (electrostatic induction type organic thin film transistor) will be described. FIG. 5 is a schematic cross-sectional view according to a fifth embodiment of the organic thin film transistor.

  An organic thin film transistor 140 shown in FIG. 5 includes a substrate 1, a source electrode 5 formed on the substrate 1, an organic semiconductor layer 2 formed on the source electrode 5, and an organic semiconductor layer 2 on which a gate electrode is formed. A plurality of comb-like gate electrodes 4 formed so as to be spaced apart from each other at a predetermined interval in the electrode formation region 20 that is the partial region 2A set to be a single region so as to cover all of the comb-like gate electrodes 4 The organic semiconductor layer 2a formed on the organic semiconductor layer 2 and the gate electrode 4 (the material constituting the organic semiconductor layer 2a may be the same as or different from that of the organic semiconductor layer 2), and on the organic semiconductor layer 2a In addition, the electrode forming region 20 which is the partial region 2aA set in the organic semiconductor layer 2a where the drain electrode is formed is integrated so as to overlap the comb-shaped gate electrode 4 when viewed from the thickness direction of the substrate 1. In Having a drain electrode 6 made, the.

  A sixth embodiment of the organic thin film transistor (field effect organic thin film transistor) will be described with reference to FIG. FIG. 6 is a schematic cross-sectional view according to a sixth embodiment of the organic thin film transistor.

  An organic thin film transistor 150 shown in FIG. 6 includes a substrate 1, an organic semiconductor layer 2 formed on the substrate 1, and an electrode formation region 20 which is a partial region 2A set in the organic semiconductor layer 2 on which a source electrode is formed. On the organic semiconductor layer 2 across the source electrode 5 and the drain electrode 6 so as to partially cover the source electrode 5 and the drain electrode 6. Electrode formation which is a partial region 3A set in the insulating layer 3 on which the gate electrode is formed so as to straddle the source electrode 5 and the drain electrode 6 when viewed from the thickness direction of the substrate 1 and the insulating layer 3 formed And a gate electrode 4 formed in the region 20.

  A seventh embodiment of an organic thin film transistor (field effect organic thin film transistor) will be described with reference to FIG. FIG. 7 is a schematic cross-sectional view according to a seventh embodiment of the organic thin film transistor.

  An organic thin film transistor 160 shown in FIG. 7 covers the substrate 1, the gate electrode 4 formed in the electrode formation region 20 that is the partial region 1 </ b> A set on the substrate 1 on which the gate electrode is formed, and the gate electrode 4. Insulating layer 3 formed on substrate 1, organic semiconductor layer 2 formed to cover gate electrode 4 when viewed from the thickness direction of substrate 1, and when viewed from the thickness direction of substrate 1 The source electrode 5 formed in the electrode formation region 20 which is the partial region 2A set in the organic semiconductor layer 2 where the source electrode is formed so as to span a part of the gate electrode 4 and the thickness of the substrate 1 An electrode formation region 20 which is a partial region 2A set in the organic semiconductor layer 2 where the drain electrode is formed so as to sometimes span a part of the gate electrode 4 and to be separated from the source electrode 5 at a predetermined interval. It has formed a drain electrode 6, a.

In the first to seventh embodiments of the organic thin film transistor, the source electrode 5 and the drain electrode 6 are constituted by electrodes made of a thin film containing graphene nanoribbons, and the current path of the organic semiconductor layer 2 and / or the organic semiconductor layer 2a (Channel) is configured. The gate electrode 4 controls the amount of current passing through the current path (channel) in the organic semiconductor layer 2 and / or the organic semiconductor layer 2a by applying a voltage.
The gate electrode 4 is preferably formed of a thin film containing graphene nanoribbons. The gate electrode 4 may use an electrode material other than the graphene nanoribbon.

  Of the embodiments of the organic thin film transistor described above, the field effect organic thin film transistor is manufactured by a known method, for example, a method described in JP-A No. 5-110069 except for an electrode made of a thin film containing graphene nanoribbons. Can do. Further, among the embodiments of the organic thin film transistor described above, the static induction organic thin film transistor is formed by a known method, for example, a method described in Japanese Patent Application Laid-Open No. 2004-006476, except for an electrode made of a thin film containing graphene nanoribbons. Can be manufactured.

  The board | substrate 1 will not be restrict | limited unless the characteristic as an organic thin-film transistor is inhibited. As the substrate 1, a glass substrate, a flexible film substrate, or a plastic substrate can be used.

  Examples of materials used for the organic semiconductor layer 2 include materials capable of forming ink by dispersion of polymer compounds and low-molecular compounds having carrier transportability, carbon nanotubes (CNT), graphene nanoribbons, and the like, and low-evaporable materials. Examples include molecular materials.

  Examples of the material used for the organic semiconductor layer 2 include anthracene, tetracene, pentacene, benzopentacene, dibenzopentacene, tetrabenzopentacene, naphthopentacene, hexacene, heptacene, nanoacene, and other acene compounds; phenanthrene, picene, fluorene, pyrene, Coronene compounds such as antanthrene, peropyrene, coronene, benzocoronene, dibenzocoronene, hexabunzocoronene, benzodicoronene, vinyl coronene; perylene compounds such as perylene, terylene, diperylene, quaterylene; Throne, Chrysene, Circumanthracene, Bisanthene, Zesulene, Heptazesulene, Pyranthrene, Biolanten, Isoviolan , Biphenyl, triphenylene, terphenyl, quarterphenyl, circophenyl, ketrene, phthalocyanine, porphyrin, fullerene (C60 fullerene, C70 fullerene), tetrathiofulvalene compound, quinone compound, tetracyanoquinodimethane compound, thiophene oligomer , Oligomers of pyrrole, oligomers of phenylene, oligomers of phenylene vinylene, oligomers of thienylene vinylene, oligomers of thiophene and phenylene, oligomers of thiophene and fluorene, derivatives thereof (for example, rubrene which is a benzene ring addition derivative of tetracene, etc. ), Low molecular organic semiconductor compounds such as carbon nanotubes with expanded conjugated system of fullerenes; polythiophene, polyphenylene, polyaniline, polyphene Lembinylene, polythienylene vinylene, polyacetylene, polydiacetylene, polytriphenylamine, copolymer of triphenylamine and phenylene vinylene; copolymer of thiophene and phenylene; copolymer of thiophene and fluorene, thiophene derivative and High molecular organic semiconductor compounds such as copolymers of benzothiadiazole and derivatives thereof (for example, poly (3-hexylthiophene) which is an alkyl-substituted polythiophene) can be used. The material used for the organic semiconductor layer 2 is preferably a compound represented by the following formulas (1a) to (1o).

In the above formulas (1a) to (1o), R ₁ , R ₂ , R ₃ , and R ₄ are each independently a hydrogen atom, an alkyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, or an arylthio group. , Arylalkyl group, arylalkoxy group, arylalkylthio group, arylalkenyl group, arylalkynyl group, amino group, substituted amino group, silyl group, substituted silyl group, silyloxy group, substituted silyloxy group, monovalent heterocyclic group, halogen Represents an atom or a cyano group. n is an integer of 1 or more. The number of carbon atoms of the alkyl group, alkoxy group and alkylthio group is usually 1-20. The number of carbon atoms of the aryl group, aryloxy group and arylthio group is usually 6-30. The number of carbon atoms of the arylalkyl group, arylalkoxy group, arylalkylthio group, arylalkenyl group and arylalkynyl group is usually 8-40.
In the above formulas (1a) to (1o), n is the number of repeating units and is usually an integer of 1 to 10,000.

As the insulating layer 3 provided in contact with the organic semiconductor layer 2, a known material having high electrical insulation can be used. Examples of the material of the insulating layer 3 include SiOx, SiNx, Ta ₂ O ₅ , polyimide, polyvinyl alcohol, polyvinyl phenol, organic glass, and photoresist. The material of the insulating layer 3 is preferably a material having a high dielectric constant because the driving voltage can be lowered.

  Examples of the material of the gate electrode 4 include metals such as gold, platinum, silver, copper, chromium, palladium, aluminum, indium, molybdenum, low resistance polysilicon, and low resistance amorphous silicon, tin oxide, indium oxide, and indium tin. An oxide (ITO) etc. are mentioned. These materials can be used alone or in combination of two or more. The gate electrode 4 can be a thin film containing the graphene nanoribbon of the present invention. Furthermore, as the gate electrode 4, a silicon substrate doped with impurities at a high concentration can be used. A silicon substrate doped with impurities at a high concentration has a function as a gate electrode as well as a function as a substrate. For example, in the organic thin film transistor of the third embodiment described above, when the gate electrode 4 also serves as the substrate 1, such an organic thin film transistor has a structure shown in FIG. 13 (details will be described later).

  The source electrode 5 and the drain electrode 6 are preferably made of a low-resistance material, and it is preferable to use a thin film containing the graphene nanoribbon of the present invention.

  As mentioned above, although some structural examples were demonstrated as an organic thin-film transistor of suitable embodiment, an organic thin-film transistor is not limited to said embodiment. For example, after producing the organic thin film transistor as described above, it is preferable to form a protective film (not shown) on the organic thin film transistor in order to protect the organic thin film transistor. Thereby, an organic thin-film transistor is interrupted | blocked from air | atmosphere and the fall of the characteristic of an organic thin-film transistor can be suppressed. In addition, when a display device that is driven on the organic thin film transistor is formed by the protective film, the influence on the organic thin film transistor in the formation process can be reduced.

  Examples of a method for forming such a protective film include a method of covering an organic thin film transistor with a UV curable resin, a thermosetting resin, an inorganic SiONx film, or the like. In order to effectively cut off from the atmosphere, it is preferable to carry out the steps from the preparation of the organic thin film transistor to the formation of the protective film in a dry nitrogen atmosphere or in a vacuum without being exposed to the atmosphere.

The field-effect organic thin film transistor thus configured can be applied as a switching element for driving each pixel of an active matrix driving type liquid crystal display, an organic electroluminescence display, or the like. And the source electrode and drain electrode of the field effect type organic thin-film transistor of embodiment mentioned above consist of a thin film containing a graphene nanoribbon. A thin film containing a graphene nanoribbon has a low contact resistance with a layer containing an organic semiconductor, and as a result, the field effect mobility can be increased, so that the response speed of the field effect organic thin film transistor can be further increased.
And since the electrode for organic-semiconductor elements using the thin film containing a graphene nanoribbon can utilize printing methods, such as an inkjet method, organic-semiconductor elements, such as a large area display, can be manufactured cheaply.

(Solar cell)
Next, application of a thin film containing graphene nanoribbons to a solar cell will be described.

A preferred embodiment of the solar cell will be described with reference to FIG. FIG. 8 is a schematic cross-sectional view of a solar cell.
A solar cell 200 shown in FIG. 8 includes a substrate 1, a first electrode 7a formed in an electrode formation region 20 which is a partial region 1A set on the substrate 1 on which the first electrode is formed, and a first electrode 7a. The organic semiconductor layer 2 made of an organic thin film formed on the electrode 7a, and a second region formed in the electrode formation region 20 which is a partial region 2A set in the organic semiconductor layer 2 on which the second electrode is formed. And an electrode 7b. At least one of the first electrode 7a and the second electrode 7b is composed of a thin film containing graphene nanoribbons.

  In the solar cell according to the present embodiment, a transparent or translucent electrode is used for one of the first electrode 7a and the second electrode 7b. Examples of the electrode material include metals such as aluminum, gold, silver, copper, alkali metal, and alkaline earth metal. As the transparent or translucent electrode, a translucent film or a transparent conductive film made of these metals can be used. In order to obtain a high open circuit voltage, it is preferable to select each electrode so that the difference in work function is large. In the organic semiconductor layer 2 (organic thin film), further components such as a charge generator and a sensitizer can be added in order to increase photosensitivity. As the substrate 1, a silicon substrate, a glass substrate, a plastic substrate, or the like can be used.

  The solar cell having the above configuration efficiently generates power because the electrode 7a or 7b made of a thin film containing graphene nanoribbons has high light transmittance and can efficiently transfer and receive charges. It becomes possible.

(Optical sensor)
Next, application of a thin film containing graphene nanoribbons to an optical sensor will be described.

  With reference to FIG. 9, 1st Embodiment of an optical sensor is described. FIG. 9 is a schematic cross-sectional view according to the first embodiment of the optical sensor.

  An optical sensor 300 shown in FIG. 9 includes a substrate 1, a first electrode 7a formed in an electrode formation region 20 which is a partial region 1A set on the substrate 1 on which the first electrode is formed, The organic semiconductor layer 2 made of an organic thin film formed on the electrode 7a, the charge generation layer 8 formed on the organic semiconductor layer 2, and the portion set in the charge generation layer 8 on which the second electrode is formed And the second electrode 7b formed in the electrode formation region 20 which is the region 8A. At least one of the first electrode 7a and the second electrode 7b is composed of the graphene nanoribbon thin film according to a preferred embodiment.

  A second embodiment of the photosensor will be described with reference to FIG. FIG. 10 is a schematic cross-sectional view according to the second embodiment of the optical sensor.

  An optical sensor 310 shown in FIG. 10 includes a substrate 1, a first electrode 7a formed in an electrode formation region 20 that is a partial region 1A set on the substrate 1 on which the first electrode is formed, The charge generation layer 8 formed on the electrode 7a, the organic semiconductor layer 2 made of an organic thin film formed on the charge generation layer 8, and the portion set in the organic semiconductor layer 2 on which the second electrode is formed And the second electrode 7b formed in the electrode formation region 20 which is the region 2A. At least one of the first electrode 7a and the second electrode 7b is composed of a thin film containing graphene nanoribbons.

  FIG. 11 is a schematic cross-sectional view according to the third embodiment of the optical sensor. An optical sensor 320 shown in FIG. 11 includes a substrate 1, a first electrode 7a formed in an electrode formation region 20 that is a partial region 1A set on the substrate 1 on which the first electrode is formed, An organic semiconductor layer 2 made of an organic thin film formed on the electrode 7a, and a second electrode formed in the electrode formation region 20 which is a partial region 2A set in the organic semiconductor layer 2 where the second electrode is formed 7b. At least one of the first electrode 7a and the second electrode 7b is composed of a thin film containing graphene nanoribbons.

  In the optical sensor according to the first embodiment, the second embodiment, and the third embodiment, a transparent or translucent electrode is used for one of the first electrode 7a and the second electrode 7b. Examples of the electrode material include metals such as aluminum, gold, silver, copper, alkali metal, and alkaline earth metal. As the electrode, a semitransparent film or a transparent conductive film of these metals can be used. The charge generation layer 8 is a layer that absorbs light and generates charges. In the organic semiconductor layer 2, a charge generating agent, a sensitizer and the like can be added and used in order to increase the photosensitivity. As the substrate 1, a silicon substrate, a glass substrate, a plastic substrate, or the like can be used.

  The optical sensor having the above configuration has high sensitivity because the electrode 7a or 7b made of a thin film containing graphene nanoribbons has high light transmittance and can efficiently transfer and receive charges. .

(Organic electroluminescence device)
Next, an organic electroluminescence element using the organic thin film transistor according to the above-described embodiment will be described.

  An organic electroluminescence element usually has at least two organic thin film transistors, a driving transistor and a switching transistor. The organic electroluminescent element of the present invention uses the organic thin film transistor according to the preferred embodiment as described above as at least one of the organic thin film transistors.

  With reference to FIG. 12, embodiment of an organic electroluminescent element is described. FIG. 12 is a schematic cross-sectional view of an organic electroluminescence element.

  In the organic electroluminescence element 400 shown in FIG. 12, the gate electrode 4 patterned in the electrode formation region 20 which is the partial region 1A set on the substrate 1, the substrate 1 on which the gate electrode is formed, and the gate electrode 4 An insulating layer 3 formed on the substrate 1 so as to cover the gate electrode, and an insulating layer on which a source electrode and a drain electrode are formed so as to at least partially overlap the gate electrode 4 when viewed in the thickness direction of the substrate 1 The source electrode 5 and the drain electrode 6 formed so as to be separated from each other at a predetermined interval in the electrode forming region 20 which is the partial region 3A set to 3, and the source electrode 5 and the source electrode 5 extending over the source electrode 5 and the drain electrode 6 An organic semiconductor layer 2 formed on the insulating layer 3, the source electrode 5, and the drain electrode 6 so as to cover a part of each drain electrode 6; The protective film 11 formed on the organic semiconductor layer 2 so as to cover the entire body layer 2, an organic thin film transistor T is formed.

  In the organic electroluminescence element 400, the lower electrode (anode) 13, the light emitting element 14, and the upper electrode (cathode) 15 are sequentially stacked on the organic thin film transistor T via the interlayer insulating film 12. The lower electrode 13 and the drain electrode 6 of the transistor T are electrically connected to each other through a via hole 12 a provided in the film 12 so as to penetrate the interlayer insulating film 12. In addition, a bank 16 is provided around the lower electrode 13 and the light emitting element 14 to electrically separate the adjacent light emitting elements 14 from each other. Further, a substrate 18 is disposed above the upper electrode 15, and a gap between the upper electrode 15 and the substrate 18 is sealed with a sealing member 17.

  In the organic electroluminescence element 400 shown in FIG. 12, the organic thin film transistor T functions as a drive transistor. Further, in the organic electroluminescence element 400 shown in FIG. 12, the switching transistor is omitted.

  In the organic electroluminescence device 400 according to the present embodiment, the thin film containing the graphene nanoribbon as described above in the organic thin film transistor T is used as one of the gate electrode 4, the source electrode 5, the drain electrode 6, or a combination thereof. The applied organic thin film transistor is used. About the other structural member, the structural member in a well-known organic electroluminescent element can be used. In this embodiment, for example, the upper electrode 15, the sealing member 17, and the substrate 18 can be transparent or translucent to form a top emission type organic electroluminescence element. The transistor T and the substrate 1 may be transparent or semi-transparent to form a bottom emission type organic electroluminescence element.

  Moreover, the organic electroluminescent element 400 shown by FIG. 12 can be functioned as a planar light source by using a white light emitting material for the light emitting element 14. FIG. Further, as the light emitting element 14, a light emitting element using a red light emitting material, a light emitting element using a blue light emitting material, and a light emitting element using a green light emitting material are formed, and the driving of each light emitting element is controlled by the transistor T. It can also be a display device.

  Examples of a method for obtaining a patterned light emission in such an organic electroluminescence element include a method of installing a mask provided with a patterned window on the surface of a planar light emitting element, and a light emission constituting the light emitting element. Examples thereof include a method in which a portion to be made non-light-emitting in the layer is made extremely thick to make it substantially non-light-emitting, and a method in which the anode or cathode, or both electrodes are formed in a pattern. A segment type display element capable of displaying numbers, letters, simple symbols, etc. can be obtained by forming a pattern by any of these methods and arranging some electrodes so that they can be turned ON or OFF independently.

  Furthermore, in order to obtain a dot matrix display element, both the anode and the cathode may be formed in stripes and arranged so as to be orthogonal to each other. Partial color display and multicolor display are possible by a method of separately coating a plurality of types of polymeric fluorescent substances having different emission colors or a method using a color filter or a fluorescence conversion filter. The dot matrix display element can be driven passively or can be driven actively in combination with a TFT (thin film transistor). These display elements can be used as display devices for computers, televisions, mobile terminals, mobile phones, car navigation systems, video camera viewfinders, and the like.

  In addition, examples of the organic semiconductor element to which the organic thin film transistor of the preferred embodiment is applied include an electronic tag and a liquid crystal display element in addition to such an organic electroluminescence element. And if the organic thin-film transistor concerning embodiment of this invention is used for these organic-semiconductor elements, since it can exhibit a more favorable and homogeneous transistor characteristic, the operation characteristic of an organic-semiconductor element shall be stable and excellent. can do.

  In the organic thin film transistor, solar cell, photosensor, and organic electroluminescence element according to the above-described embodiment, any of the source electrode 5, the drain electrode 6, the gate electrode 4, the first electrode 7a, and the second electrode 7b that are electrodes Or these combinations are performed by the apply | coating method using the self-assembled monolayer which has the hydrophobic surface formed beforehand. Specifically, the self-assembled monolayer is patterned so as to cover only the partial regions outside the partial regions 1A, 2A, and 3A that are the electrode formation regions 20 in the already described embodiment, and contains graphene oxide nanoribbons A coating liquid or a coating liquid containing graphene nanoribbons is applied (printed), and the coating liquid is arranged in a self-aligning manner only in the partial regions 1A, 2A, 3A, and a coating liquid containing graphene oxide nanoribbons is applied. In this case, the graphene nanoribbons contained in the coating liquid are reduced by a predetermined treatment to form graphene nanoribbons, or the coating liquid containing the applied graphene nanoribbons is dried to remove the graphene nanoribbons from the thin film containing the graphene nanoribbons. An electrode can be formed.

  Hereinafter, the present invention will be described in more detail with reference to examples. The present invention is not limited to these examples.

[Production of graphene oxide nanoribbons]
Graphene oxide nanoribbons (GONR) were produced by oxidizing multi-walled carbon nanotubes (Hodogaya Chemical Co., Ltd., MWNT-7) by the Modified Hummers method.
First, multi-walled carbon nanotubes (150 mg) were added into concentrated sulfuric acid (30 mL) and stirred for 8 hours to 12 hours, then potassium permanganate (750 mg, 4.5 mmol) was added, stirred for 1 hour, and then stirred at 60 ° C. for 1 hour. Stir for hours. After cooling, it was added little by little to a mixture of 400 mL of ion exchange distilled water and hydrogen peroxide (5 mL, concentration 30%) on an ice bath to obtain a brown suspension. Filtration under reduced pressure was performed with a polytetrafluoroethylene (PTFE) membrane filter (MILLIPORE, pore size: 5 μm), and the resulting solid was dissolved in 150 mL of ion-exchanged distilled water, stirred for 30 minutes, and irradiated with ultrasonic waves for 15 minutes. Thereafter, the solution was filtered under reduced pressure using a PTFE membrane filter (pore size: 0.45 μm). After stirring for 30 minutes, the mixture was irradiated with ultrasonic waves for 15 minutes and filtered. This ultrasonic irradiation and filtration were further repeated and vacuum-dried to obtain brown graphene oxide nanoribbons (280 mg) as a solid.

[Evaluation of graphene oxide nanoribbons]
A photograph showing an AFM (Atomic Force Microscope) image of the obtained graphene oxide nanoribbon is shown in FIG.

  The obtained graphene oxide nanoribbon was a typical nanoribbon having a width of about 160 nm. Since the thickness is about 1.36 nm, it can be considered that the film can be basically peeled into a single-layer nanoribbon as compared with d = 0.82 nm observed by X-ray diffraction (XRD). FIG. 15 shows the measurement result of the Raman spectrum. FIG. 15 is a diagram showing a Raman spectrum. The Raman spectrum showed a characteristic D band in graphene oxide nanoribbons.

[Reduction of graphene oxide nanoribbons]
The reduction of graphene oxide nanoribbons was performed by the following method.
Heat reduction: The substrate coated with the graphene oxide nanoribbon solution was placed in a vacuum oven and annealed at 230 ° C. for 12 hours.

  FIG. 16 shows the measurement results of the X-ray photoelectron spectrum (XPS) before and after the reduction. FIG. 16 is a diagram showing an XPS spectrum.

  The graphene oxide nanoribbon shows a peak of 286.1 eV characteristic of oxidized carbon, but this peak disappears after reduction, and it was confirmed that the graphene oxide nanoribbon was reduced to graphene nanoribbon (GNR) by either method did it.

The electrical conductivity of the thin film containing graphene oxide nanoribbons was 4 × 10 ⁻⁵ S / cm. The thin film containing graphene nanoribbons reduced by the above heating reduction method showed an electric conductivity of 27 S / cm. Since the thickness of the annealed graphene nanoribbon containing thin film was 200 nm, the measured electrical conductivity corresponds to a sheet resistance of 1.8 kΩ / sq.

  Hereinafter, examples of the organic thin film transistor will be described. Here, the organic thin film transistor of the embodiment shown in FIG. 13 will be described with reference to the drawings. FIG. 13 is a schematic cross-sectional view of an organic thin film transistor.

[Substrate for organic thin film transistor]
First, the surface of the n-type silicon substrate 31 also doped with impurities at a high concentration and also serving as a gate electrode was thermally oxidized to form a silicon oxide film 32 having a thickness of 300 nm. Next, the n-type silicon substrate 31 on which the silicon oxide film 32 was formed was placed in a beaker containing acetone, and ultrasonic cleaning was performed for 10 minutes. Subsequently, the same cleaning was performed using 2-propanol and ultrapure water, respectively, and then the substrate was dried in an oven at 150 ° C. for 10 minutes, and finally irradiated with ozone UV for 10 minutes.

  Self-assembled monolayers (SAMs) using ODTS (octadecyltrichlorosilane) or HMDS (1,1,1,3,3,3-hexamethyldisilazane) to remove hydroxyl groups on the silicon oxide film surface A pattern region forming step was performed.

  The ODTS process will be described. First, the substrate was taken out from the ozone UV cleaner, and immersed in a toluene solution (50 mM) of ODTS for 10 hours in an argon gas atmosphere at 70 ° C. Then, the taken-out board | substrate was put into the beaker containing toluene, and 20 minute ultrasonic cleaning was performed 3 times. Finally, the solvent was changed to acetone, and ultrasonic cleaning was performed for 10 minutes, followed by drying in an oven at 150 ° C. for 10 minutes.

  The HMDS process will be described. First, a glass pot was placed in a Teflon (registered trademark) container, and 5 drops of HMDS liquid were dropped. After the substrate taken out from the ozone UV cleaner was put in a container, the container was sealed and annealed in an oven at 150 ° C. for 1 hour. Then, the taken-out board | substrate was put into the beaker containing acetone, 20 minutes of ultrasonic irradiation was performed twice, and it dried.

[Formation of self-assembled monolayer pattern region and source and drain electrodes]
The exposed partial region 32A is formed by removing the hydrophobic alkyl group of the exposed portion of the substrate by covering the substrate after the HMDS treatment or ODTS treatment with a shadow mask and performing ozone UV irradiation (20 minutes). Hydrophilic. The formed hydrophilic partial region 32A was easily wetted by the high surface energy of the silicon oxide film, and the contact angle was also reduced. Using this difference in surface energy, the source electrode 33 and the drain electrode 34 were produced by the following steps.

  An aqueous solution (0.2% by weight) containing graphene oxide nanoribbons was dropped several times on the electrode forming region 32A which is hydrophilic, and an aqueous solution (ink) containing graphene oxide nanoribbons was placed in the electrode forming region 32A in a self-aligning manner. A source electrode 33 and a drain electrode 34 containing a graphene nanoribbon are formed in an electrode formation region outside the pattern region of the self-assembled monolayer by annealing the graphene oxide nanoribbon in a vacuum oven for 12 hours. did.

  The obtained electrodes (source electrode 33, drain electrode 34) had an electric conductivity of 27 S / cm. Similarly, as a control, the electric conductivity of the electrode made of carbon paste produced on the pattern region of the self-assembled monolayer was 2.6. The value was an order of magnitude higher than S / cm.

[Production and evaluation of organic thin-film transistors]
As described above, pentacene, sexithiophene (6T), or C60 fullerene purified by sublimation under reduced pressure (vacuum) of 10 ⁻⁶ Torr is formed on the substrate 31 on which the source electrode 33 and the drain electrode 34 are also formed. The organic thin film 35 was formed by vapor deposition to obtain an organic thin film transistor.

The characteristics as an organic thin film transistor were measured using a semiconductor analyzer (Keithley 4200) (W = 1000 μm / L = 100 μm). The V _SD constant, the transmission characteristics when is continuously changed V _G, the V _G constant was measured output characteristics when the continuously changing the V _SD. The field effect mobility μ was obtained from the saturation region of the transfer characteristics. The obtained transistor characteristic results are summarized in Table 1.

DESCRIPTION OF SYMBOLS 1,18 Substrate 1A, 2A, 3A Partial area 2, 2a Organic semiconductor layer 3 Insulating layer 4 Gate electrode 5, 33 Source electrode 6, 34 Drain electrode 7a First electrode 7b Second electrode 8 Charge generation layer 11 Protective film 12 Interlayer insulation film 13 Lower electrode (anode)
14 Light emitting element 15 Upper electrode (cathode)
16 Bank part 17 Sealing member 20 Electrode forming region 31 N-type silicon substrate 32 Silicon oxide film 35 Organic thin film 40 Self-assembled monomolecular film 50 Shadow mask 60 Coating solution 100, 110, 120, 130, 140, 150, 160 Organic thin film transistor 200 Solar cell 300, 310, 320 Optical sensor 400 Organic electroluminescence element

Claims (10)

  The electrode for organic-semiconductor elements which consists of a thin film containing the graphene nano ribbon provided in the electrode formation area | region which is outside the pattern area | region of a self-assembled monolayer. Forming a pattern region of a self-assembled monomolecular film provided in a partial region outside the electrode formation region on the substrate;
Applying a coating solution containing graphene oxide nanoribbons on the substrate, and arranging the coating solution in a self-aligned manner in an electrode formation region outside the pattern region of the self-assembled monolayer; and
Forming a thin film containing graphene nanoribbons by reducing the graphene oxide nanoribbons, and a method for producing an electrode for an organic semiconductor element. An organic thin film transistor having a substrate, a gate electrode, a gate insulating film, an organic semiconductor layer, a source electrode and a drain electrode,
A pattern region of a self-assembled monolayer provided on the gate insulating film;
The organic thin-film transistor which has the said source electrode and drain electrode which consist of a thin film containing the graphene nano ribbon provided in the electrode formation area | region which is outside the pattern area | region of the said self-assembled monolayer. A method for producing an organic thin film transistor having a substrate, a gate electrode, a gate insulating film, an organic semiconductor, a source electrode and a drain electrode,
Forming a pattern region of a self-assembled monolayer outside the electrode formation region set on the gate insulating film on the substrate;
Applying a coating solution containing graphene oxide nanoribbons on the substrate, and arranging the coating solution in a self-aligned manner in an electrode formation region outside the pattern region of the self-assembled monolayer; and
Forming the source electrode and the drain electrode made of a thin film containing graphene nanoribbons by reducing the graphene oxide nanoribbons.   In the step of forming the source electrode and the drain electrode, the source electrode formed of a thin film containing graphene nanoribbons by reducing the graphene nanoribbons contained in the coating liquid to graphene nanoribbons by heating in vacuum, and The manufacturing method of the organic thin-film transistor of Claim 4 which forms a drain electrode.   A planar light source comprising the organic thin film transistor according to claim 3.   A display device comprising the organic thin film transistor according to claim 3. A substrate, an anode, a cathode, and a layer containing an organic semiconductor provided between the anode and the cathode;
A photoelectric conversion element, wherein at least one of the anode and the cathode is an electrode for an organic semiconductor element according to claim 1.   The solar cell module which has a photoelectric conversion element of Claim 8.   An image sensor comprising the photoelectric conversion element according to claim 8.