JP2013027232A - Power converter - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power converter in which two semiconductor switching elements are connected in series to constitute one leg, allowing reduction in wiring inductance between one-leg terminals.SOLUTION: A plurality of semiconductor modules 111, 112, ..., in which two semiconductor switching elements are connected in series respectively, are connected in parallel between DC terminals P1 and P2, and N1 and N2. A first conductor plate 51 that is connected to the first terminal P1 of the first semiconductor module 111, a second conductor plate 52 that is connected to the first terminal P2 of the second semiconductor module 112, and a third conductor plate 53 that is connected to the second terminals N1 and N2 of the first and second semiconductor modules 111 and 112 are laminated, having opposing parts provided. Connection terminals 512 and/or 522, which electrically connect the first conductor plate 51 and the second conductor plate 52 to each other, and are lead parts for connection to one of the DC terminals, arranged between two connection terminals 533 and 534 which are lead parts for connection from the third conductor plate 53 to the other of the DC terminals.

Description

  The present invention relates to a power conversion device including semiconductor switching elements.

  For variable speed drive, a system using a power converter, that is, a system in which a commercial power supply is converted to direct current by a diode rectifier circuit or a PWM converter, and a motor is driven at a variable frequency from a smoothed direct current power via an inverter is generally used. It is.

  If the voltage to be driven cannot be increased when the load to be driven becomes large, it is necessary to increase the capacity of the converter by increasing the current. In such a case, the power converter is configured. In many cases, a plurality of semiconductor switching elements (here, IGBTs are described as an example) are connected in parallel. In a converter using a semiconductor switching element, the wiring inductance is reduced in order to suppress a voltage jump at the time of switching, and in the case of being connected in parallel, it becomes a problem to suppress uneven current sharing.

  On the other hand, in Patent Document 1 and Patent Document 2, a conductive plate connected to the positive electrode of the first semiconductor module and a conductive plate connected to the negative electrode of the second semiconductor module are stacked and opposed to each other. The above-described problem is solved by stacking and opposing the conductive plate connected to the negative electrode of the first semiconductor module and the conductive plate connected to the positive electrode of the second semiconductor module.

  In Patent Document 2, a so-called RCD snubber circuit including a series body of a snubber capacitor and a snubber diode and a discharge resistor for discharging the snubber capacitor is assumed as a snubber circuit for suppressing the voltage jump of the semiconductor switching element. Therefore, even if there is a difference in the voltage of the snubber capacitor between the parallel circuits due to a time lag in switching of the IGBTs connected in parallel, the reverse current is blocked by the snubber diode, so that an oscillating current is generated. There is no.

  In the above RCD snubber circuit, a diode and a resistor are required, and it is difficult to reduce the size of the conversion device. Therefore, there is a system in which only a capacitor is connected to both terminals of a switching element (called a clamp capacitor).

JP 2007-151286 A JP 2010-98846 A

  When the above-described clamp capacitor is used, the clamp capacitor is connected in parallel by the wiring conductor plate, so that an oscillation current may be generated when a difference occurs in the capacitor voltage due to the LC circuit having a very small resistance. If the inductance of the circuit between the clamp capacitors connected in parallel is large, the oscillating current when a voltage difference is generated between the two clamp capacitors cannot be suppressed. Therefore, it is necessary to reduce the inductance in this circuit.

  In Patent Documents 1 and 2, the inductance of the circuit configured between the clamp capacitors is not taken into consideration, and the inductance reduction is insufficient.

  The problem to be solved by the present invention is to reduce the wiring inductance of a circuit configured between terminals of semiconductor switching elements connected in parallel in a power converter.

  In order to solve the above problems, the present invention is, in one aspect thereof, a power conversion device formed by connecting a plurality of semiconductor modules in which two semiconductor switching elements are connected in series, in parallel between DC terminals, A first semiconductor module and a second semiconductor module each connected in parallel between the DC terminals; a first conductor plate connected to a first terminal of the first semiconductor module; and the second semiconductor module A second conductor plate connected to a first terminal of the semiconductor module; and a third conductor plate connected to a second terminal of the first and second semiconductor modules; In a power conversion device having a structure in which a plurality of conductive plates are stacked and facing each other, a first connection terminal for electrically connecting the first conductive plate to the second conductive plate, and the first The second conductor plate A second connecting terminal for electrically connecting to the conductive plate of, characterized in that arranged close than the distance between any other terminal in the first to third conductive plate.

  In another aspect, the present invention is a power conversion device formed by connecting a plurality of semiconductor modules in which two semiconductor switching elements are connected in series between DC terminals in parallel, each of which is connected in parallel between the DC terminals. The first and second semiconductor modules connected to each other, the first conductor plate connected to the first terminal of the first semiconductor module, and the first terminal of the second semiconductor module A second conductor plate to be connected; and a third conductor plate to be connected to a second terminal of the first and second semiconductor modules, wherein the first to third conductor plates are stacked to face each other. In the power conversion device having a structure having a portion to be connected, a connection terminal that electrically connects the first conductor plate and the second conductor plate and serves as a lead-out portion connected to one of the DC terminals, The third conductor plate Characterized in that disposed between two connection terminals to be lead-out portion connected to the other et the DC terminals.

  According to a preferred embodiment of the present invention, the wiring inductance of a circuit formed between terminals of semiconductor switching elements connected in parallel can be reduced.

  For this reason, when a capacitor is directly connected between the terminals of the first and second semiconductor modules and a clamp capacitor is configured, an oscillating current when a voltage difference occurs between the clamp capacitors connected in parallel. Can be suppressed.

  Other objects and features of the present invention will be made clear in the embodiments described below.

It is a perspective view which shows the conductor board structure of the power converter device by Example 1 of this invention. It is a disassembled perspective view of the laminated conductor board in Example 1 of this invention. It is a perspective view which shows the comparison of the conductor plate structure for demonstrating the effect of this invention. It is a perspective view which shows the mounting structure example of the clamp capacitor | condenser in this invention. It is a perspective view which shows the conductor board structure of the power converter device by Example 2 of this invention. It is a disassembled perspective view of the laminated conductor board in Example 2 of this invention. It is a perspective view which shows the conductor board structure of the power converter device by Example 3 of this invention. It is a disassembled perspective view of the laminated conductor board in Example 3 of this invention. It is a perspective view which shows the conductor board structure of the power converter device by Example 4 of this invention. It is a disassembled perspective view of the laminated conductor board in Example 4 of this invention. It is a perspective view which shows the conductor board structure of the power converter device by Example 5 of this invention. It is a perspective view which shows the conductor board structure of the power converter device by Example 6 of this invention. It is a schematic block diagram of the drive system in the elevator to which this invention is applied. It is a parallel block diagram of the semiconductor module which similarly comprises the main circuit.

  FIG. 13 is a schematic configuration diagram of a drive system in an elevator to which the present invention is applied.

  The DC power rectified by the converter 1 and smoothed by the smoothing capacitor 3 from the power source (here, a three-phase power source) 81 is converted to AC power of variable frequency and variable voltage by the inverter 2 and supplied to the drive motor 9 of the elevator. Driving the elevator. That is, the sheave 91 is rotated by the motor 9 and the car 92 and the counterweight 93 suspended by the rope 94 are driven to move up and down.

  In many cases, a reactor 82 is connected between the power supply 81 and the converter 1 in order to reduce harmonics to the power supply or to boost the voltage. In addition, a filter circuit or the like is generally connected in addition to this, but it is omitted from the figure because it is not directly related to the present invention.

  The converter 1 is composed of three-phase legs 11 to 13, and each phase includes a parallel body of, for example, 1101 and 1102, a semiconductor switching element (which will be described using an IGBT as an example here) and a free-wheeling diode (referred to as FWD). It consists of a pair of upper and lower sides. The IGBT and the FWD are configured by separate semiconductor chips, but here, they are labeled as one parallel body (for example, 1101). The inverter 2 is also composed of three-phase legs 21 to 23 in the same manner.

  In order to increase the capacity of the power conversion device, semiconductor switching elements may be connected in parallel.

  FIG. 14 is a parallel configuration diagram of semiconductor modules constituting a main circuit of a drive system in an elevator to which the present invention is applied.

  In the example shown in the figure, a semiconductor module 111 in which a pair of IGBTs and FWDs (1111 and 1112) are built in, and a semiconductor module 112 in which 1121 and 1122 are built in are connected in parallel. Also, clamp capacitors 41 and 42 are connected to each of the semiconductor modules 111 and 112 in order to suppress a voltage jump during switching.

  In FIG. 14, in order to suppress a voltage jump at the time of switching, it is necessary to reduce the inductance of the circuit L <b> 1 including a smoothing capacitor and a semiconductor module (not shown). Further, in order to equalize the current sharing between the semiconductor modules 111 and 112, it is necessary that the inductances of both the modules are equal. This can be realized by the configuration of Patent Document 1.

  On the other hand, as described above, if the inductance of the circuit L2 between the clamp capacitors 41 and 42 connected in parallel is large, the oscillating current when a voltage difference is generated between the clamp capacitors 41 and 42 cannot be suppressed. For this reason, it is necessary to reduce the inductance in the circuit L2.

  In Patent Documents 1 and 2, in the IGBT parallel circuit shown in FIG. 14, with respect to a circuit with a smoothing capacitor (not shown) (dashed line L1 in FIG. 14), the inductance is reduced and the inductance between the parallels is equalized. However, it does not take into account the inductance of the circuit composed of the clamp capacitors 41 and 42 (dotted line L2 in FIG. 14), and the oscillation current when a voltage difference occurs between the clamp capacitors 41 and 42 Can not be suppressed.

  For example, in the configuration of the conductor plates in FIGS. 11, 12 and 14 of Patent Document 1, the circuit between the parallel clamp capacitors (dotted line L2 in FIG. 14) is a conductor from the DC positive terminal P1 to the connection portion a2 of the conductor plate CP1. It is connected to the conductor plate PC via the plate connection portion a3, connected to the connection portion b3 of the conductor plate CP2 by the conductor plate PC, and connected to the other clamp capacitor by the connection portion b2 of the conductor plate CP2. Since the negative electrode of the capacitor is connected to the terminals c2 and c3 of the DC negative electrode conductor plate N by the conductor plate N and the inductance of this portion is low, the connection portions a3 and b3 between the conductor plates CP1 and CP2 are separated. Not suitable for inductance reduction. Similarly, in the configurations of FIGS. 23 to 24 of Patent Document 1, the portion connected to the conductor plate CP1 and the portion connected to the conductor plate CP2 are separated from each other, which is not suitable for reducing the inductance.

  Hereinafter, an embodiment of the present invention for reducing the wiring inductance of a circuit formed between terminals of semiconductor switching elements connected in parallel will be described with reference to the drawings. In each drawing and each embodiment, the same or similar components are denoted by the same reference numerals, and description thereof is omitted.

  FIG. 1 is a perspective view showing a conductor plate structure of a power conversion device according to a first embodiment of the present invention, and FIG. 2 is an exploded perspective view of the laminated conductor plate.

  Similar to Patent Document 1, a mounting example is shown in which semiconductor modules 111 and 112 in which a positive electrode P1 and a negative electrode N1 are arranged side by side are arranged in parallel so that terminals are close to each other.

  As a conductor plate for wiring, there are a first conductor plate 51 connected to the DC positive electrode terminal P1 and a second conductor plate 52 connected to the DC positive electrode terminal P2 as conductor plates on the positive electrode side. The conductor plate on the negative electrode side includes a conductor plate 53 connected to the DC negative electrode terminal N1 and the DC negative electrode terminal N2. These three conductor plates are laminated in this order 51, 53, 52 through an insulating portion (not shown).

  First, the first conductor plate 51 includes a terminal 511 that is directly connected to the DC positive terminal P1 of the semiconductor module 111 and a terminal 512 that is connected to the terminal 611 of the conductor plate 61 connected to the positive electrode of the smoothing capacitor 3. ing.

  The second conductor plate 52 includes a terminal 521 that is directly connected to the DC positive terminal P2 of the semiconductor module 112 and a terminal 522 that is connected to the terminal 612 of the conductor plate 61 connected to the positive electrode of the smoothing capacitor 3. ing.

  Further, the third conductor plate 53 includes a terminal 531 directly connected to the DC negative terminal N1 of the semiconductor module 111 and a terminal 532 directly connected to the DC negative terminal N2 of the semiconductor module 112.

  The state of these terminals can be clearly confirmed by the exploded perspective view of FIG.

  Here, the terminal 512 for connecting to the terminal 611 of the conductor plate 61 connected to the positive electrode of the smoothing capacitor 3 of the first conductor plate 51 and the conductor plate connected to the positive electrode of the smoothing capacitor 3 of the second conductor plate 52. A terminal 522 for connecting to the terminal 612 of 61 is arranged near the center so as to be close to each other. That is, the relationship between the interval d1 and the interval d2 shown in FIG. 1 is d1 <d2.

  The connecting portions of the terminals 512 and 611 and the connecting portions of the terminals 522 and 612 are both direct current positive electrodes, while the terminals 533 and 534 have different potentials that are connected to the direct current negative electrode via the conductor plate 62, so that the insulation distance. It is necessary to ensure. Note that since the terminals 512 and 522 have the same potential, an insulation distance is not necessary. Therefore, as described above, the interval d1 between the connection portions having the same potential may be smaller than the interval d2 between the connection portions between different potentials. Since the potential is the same, the distance d1 may be zero, but the negative conductor plate 53 and the insulating portion are between the conductor plates, so that they are not the same plane. For this reason, it is necessary to divide the portion where the conductor plate 61 is connected to the terminals 512 and 522, and it is easier to manufacture if there are some [mm] in consideration of manufacturing errors.

  FIG. 3 is a perspective view showing a comparison of conductor plate structures for explaining the effect of the first embodiment of the present invention.

  3A shows Example 1 of the present invention, FIG. 3B is a comparative example in which FIGS. 12 and 14 of Patent Document 1 are applied, and FIG. 3C is a diagram of Patent Document 1. FIG. 23 is a comparative example applying FIG.

  A portion where the positive electrodes are connected in the circuit L2 between the clamp capacitors shown in FIG. 14 is indicated by a broken line in FIG. In any case, the connection between the negative electrodes is made via the conductive plate 53 on the negative electrode side. In the comparative example shown in FIGS. 3B and 3C, the terminals 512 and 522 are arranged apart from each other, and the area surrounded by the circuit L2 is widened, whereas FIG. Then, since the terminals 512 and 522 are close to each other, the inductance can be reduced.

  As described above, according to the first embodiment of the present invention, the oscillating current can be suppressed by reducing the inductance between the clamp capacitors connected in parallel. Further, in the comparative example of FIG. 3C, the two conductor plates 51 and 52 connected to the positive electrode side have different shapes, but in the first embodiment of the present invention, they can be the same shape.

  1 to 3, the conductor plates 61 and 62 are arranged such that the positive electrode side conductor plate 61 is arranged on the upper side, but the effect is not changed even if the negative electrode side conductor plate 62 is arranged on the upper side. 1, 2 and 3A, the first terminal 512 is arranged on the lower right side of the drawing and the second terminal 522 is arranged on the upper left side of the drawing. Even if the arrangement is reversed, the area of the circuit L2 can be reduced and the inductance can be reduced in exactly the same manner.

  FIG. 4 is a perspective view showing a mounting structure example of the clamp capacitor in the present invention. In the description so far, examples of mounting the clamp capacitors 41 and 42 which are omitted for easy understanding of the terminal and conductor plate shapes of the semiconductor module are shown. Thus, by directly connecting to the terminals of the semiconductor modules 111 and 112, low inductance is achieved. In the examples so far, as shown in FIG. 14, the description has been made on the assumption that the clamp capacitors 41 and 42 are connected. However, the IGBT itself has a capacitance in the off state, and the switching is not performed. When the timing is shifted, an oscillating current between them may be generated. In order to suppress this oscillating current, it is necessary to reduce the inductance, and the present invention is effective even when a clamp capacitor is not connected.

  In the first embodiment, a power conversion device formed by connecting a plurality of semiconductor modules (111, 112,...) In which two semiconductor switching elements are connected in series between DC terminals in parallel, A first semiconductor module (111) and a second semiconductor module (112) connected in parallel between the DC terminals (P1, P2-N1, N2), respectively, and a first of the first semiconductor module (111). A first conductor plate (51) connected to the terminal (P1) of the second semiconductor plate (2), a second conductor plate (52) connected to the first terminal (P2) of the second semiconductor module (112), The first and third conductor plates (51) include a third conductor plate (53) connected to the second terminals (N1, N2) of the first and second semiconductor modules (111, 112). ~ 53) are stacked and face each other In the power converter having a structure having a portion, the first connection terminal (512) for electrically connecting the first conductor plate (51) to the second conductor plate (52), A second connection terminal (522) for electrically connecting a second conductor plate (52) to the first conductor plate (51) is connected to the first to third conductor plates (51-51). 53) is arranged closer to the distance between any other terminals (interval d1).

  In other words, in the power conversion device having a structure in which the first to third conductor plates (51 to 53) are stacked and have opposing portions, the first conductor plate (51) and the second conductor plate A connection terminal (512 and / or 522) serving as a lead portion for electrically connecting the conductor plate (52) to one of the DC terminals is connected to the DC terminal from the third conductor plate (53). It arrange | positions between two connection terminals (533 and 534) used as the drawer | drawing-out part connected to the other.

  FIG. 5 is a perspective view showing a conductor plate structure of a power converter according to Embodiment 2 of the present invention, and FIG. 6 is an exploded perspective view of the laminated conductor plate. Here, the conductor plates 53 and 62 on the negative electrode side have the same structure as that of the first embodiment shown in FIGS. On the positive electrode side, the first connection terminal 512 and the second connection terminal 522 are in direct contact with each other and are electrically connected to each other, and are also directly connected to the connection terminal 611 of the conductor plate 61.

  By adopting such a configuration, the area surrounded by the circuit between the clamp capacitors can be further reduced, so that the effect of reducing the inductance is great.

  On the other hand, as shown in FIG. 6, the conductor plates 51 and 52 on the positive electrode side have the same shape, but it is necessary to bend the connecting portion and to ensure insulation in the vicinity of the connecting portion.

  FIG. 7 is a perspective view showing a conductor plate structure of a power conversion device according to Embodiment 3 of the present invention, and FIG. 8 is an exploded perspective view of the laminated conductor plate.

  Similar to the second embodiment, the connection terminals 512 and 522 are electrically connected by direct contact. Here, the connection terminal 533 on the negative electrode side is provided at one place without being divided.

  For this reason, since the space | gap for ensuring the insulation of a connection terminal may be one place, it is possible to expand the width | variety of the conductor part of a connection terminal. However, since the connection terminal 533 is close to the DC negative terminal N1 and far from the other DC negative terminal N2, there is a possibility that the current flowing to the smoothing capacitor 3 via the negative-side conductor plate 62 becomes uneven. .

  The third embodiment is a power conversion device formed by connecting a plurality of semiconductor modules (111, 112,...) In which two semiconductor switching elements are connected in series between DC terminals in parallel. The first semiconductor module (111) and the second semiconductor module (112) connected in parallel between the terminals (P1, P2-N1, N2), respectively, and the first semiconductor module (111) first A first conductor plate (51) connected to the terminal (P1); a second conductor plate (52) connected to the first terminal (P2) of the second semiconductor module (112); A third conductor plate (53) connected to the second terminals (N1, N2) of the first and second semiconductor modules (111, 112), and the first to third conductor plates (51). , 52, 53) are stacked In the power conversion device having a structure having a portion to be connected, the first conductor plate (51), the second conductor plate (52), and the first DC terminal (512) that electrically connects one of the DC terminals. , 522, 611) and a DC second terminal (532, 621) connected from the third conductor plate (53) to the other of the DC terminals, the first to third conductor plates (51-53). ) Are arranged side by side in a direction substantially parallel to the opposing plane.

  FIG. 9 is a perspective view showing a conductor plate structure of a power converter according to Embodiment 4 of the present invention, and FIG. 10 is an exploded perspective view of the laminated conductor plate.

  Here, a case where the semiconductor module 11 constituting one phase of the converter 1 and the semiconductor module 21 constituting one phase of the inverter 2 in FIG. 13 are constituted as one unit, and three units are constituted by three units. The unit for one phase at that time is shown. Moreover, as the semiconductor modules 11 and 21, those having a standard structure in which the positive terminals P1 and P2, the negative terminals N1 and N2, and the AC terminal AC are arranged in a line at the center of the module are used.

  The positive and negative electrodes of the semiconductor module are connected in parallel, but the AC is connected separately and the switching operation is not simultaneous. When a clamp capacitor is connected between the positive and negative electrodes, when one of the semiconductor modules switches, the voltage of the capacitor connected to that module fluctuates, so an oscillating current is generated between the other clamp capacitor. May occur. In order to suppress this oscillating current quickly, it is necessary to reduce the inductance. Therefore, the connection terminals 512 and 522 are arranged close to each other as in the first embodiment.

  FIG. 11: is a perspective view which shows the conductor board structure of the power converter device by Example 5 of this invention.

  In the fifth embodiment, four semiconductor modules 111, 112, 113 and 114 are connected in parallel. Each of two parallels has the same configuration as in the first embodiment, and the conductor plates 61 and 62 have a structure corresponding to four parallels. Even in this case, since the connection portions 512 and 522 are close to each other and the same configuration exists also in the lower right portion, the inductance can be reduced as in the previous embodiments.

  FIG. 12 is a perspective view showing a conductor plate structure of a power conversion device according to Embodiment 6 of the present invention.

  This embodiment is also a case where four are connected in parallel, but the positive electrode P1 of the semiconductor module 111 and the positive electrode P3 of the semiconductor module 113 are connected by the same conductor plate 51. Although not shown in the figure, similarly, the positive electrode P2 of the semiconductor module 112 and the positive electrode P4 of the semiconductor module 114 are connected by the same conductor plate 52. The negative electrodes N1, N2, N3, and N4 of the four semiconductor modules are connected by a single conductor plate 53. In FIG. 11, by integrating the separated conductor plates, the parallel inductance can be further reduced.

  1: PWM rectifier circuit (converter), 2: inverter, 111-114: semiconductor module, 3: smoothing capacitor, 41, 42: clamp capacitor, 51-53: first to third conductor plates, 511-514: first 1 conductive plate connection terminal, 521 to 524: second conductive plate connection terminal, 531 to 534: third conductive plate connection terminal, 61, 62: wiring conductor plate, 81: power supply, 82: reactor, 9: motor, 91: sheave, 92: car, 93: counterweight, 94: rope.

Claims (10)

A power conversion device formed by connecting a plurality of semiconductor modules in which two semiconductor switching elements are connected in series, in parallel between DC terminals,
A first semiconductor module and a second semiconductor module respectively connected in parallel between the DC terminals;
A first conductor plate connected to a first terminal of the first semiconductor module;
A second conductor plate connected to the first terminal of the second semiconductor module;
A third conductor plate connected to the second terminals of the first and second semiconductor modules;
In the power conversion device having a structure in which the first to third conductor plates are stacked and opposed to each other,
A first connection terminal for electrically connecting the first conductor plate to the second conductor plate and a second connection plate for electrically connecting the second conductor plate to the first conductor plate The second connection terminal is arranged closer to the distance between any other terminals in the first to third conductor plates. A power conversion device formed by connecting a plurality of semiconductor modules in which two semiconductor switching elements are connected in series, in parallel between DC terminals,
A first semiconductor module and a second semiconductor module respectively connected in parallel between the DC terminals;
A first conductor plate connected to a first terminal of the first semiconductor module;
A second conductor plate connected to the first terminal of the second semiconductor module;
A third conductor plate connected to the second terminals of the first and second semiconductor modules;
In the power conversion device having a structure in which the first to third conductor plates are stacked and opposed to each other,
A connection terminal that serves as a lead portion for electrically connecting the first conductor plate and the second conductor plate and connecting to one of the DC terminals,
A power conversion device, wherein the power conversion device is disposed between two connection terminals serving as a lead-out portion connected from the third conductor plate to the other of the DC terminals. In claim 1 or 2,
Comprising a smoothing capacitor connected between the DC terminals,
A connection terminal that electrically connects the first conductor plate and the second conductor plate and is connected to one of the DC terminals is a terminal of the lead conductor plate to one end of the smoothing capacitor. Connected to
The third conductor plate has third and fourth connection terminals to the lead conductor plate at the other end of the smoothing capacitor;
The first to fourth connection terminals are arranged side by side on a surface substantially parallel to a surface facing the first to third conductor plates,
The power converter according to claim 1, wherein a distance between the first connection terminal and the second connection terminal is closer than a distance between the first connection terminal and the second connection terminal. In claim 3,
The power converter according to claim 1, wherein a distance between the first connection terminal and the third connection terminal is substantially equal to a distance between the second connection terminal and the fourth connection terminal. In claim 1 or 2,
The power converter according to claim 1, wherein the first connection terminal and the second connection terminal are overlapped and connected so as to be in direct contact with each other. In any one of Claims 1-5,
The power converter according to claim 1, wherein the first conductor plate and the second conductor plate have the same shape. A power conversion device formed by connecting a plurality of semiconductor modules in which two semiconductor switching elements are connected in series, in parallel between DC terminals,
A first semiconductor module and a second semiconductor module respectively connected in parallel between the DC terminals;
A first conductor plate connected to a first terminal of the first semiconductor module;
A second conductor plate connected to the first terminal of the second semiconductor module;
A third conductor plate connected to a second terminal of the first and second semiconductor modules,
In the power converter having a structure in which the first to third conductor plates are stacked and have opposing portions,
A first DC terminal electrically connecting the first conductor plate and the second conductor plate and one of the DC terminals; and a second DC terminal connecting the third conductor plate to the other one of the DC terminals. A power conversion device, wherein terminals are arranged side by side at intervals in a direction substantially parallel to a plane opposed to the first to third conductor plates. In any one of Claims 1-7,
The first and second conductor plates are connected to a positive electrode of the DC terminal, and the third conductor plate is connected to a negative electrode of the DC terminal. In any one of Claims 1-8,
A power conversion device, wherein a capacitor is directly connected between the terminals of the first and second semiconductor modules.   A power conversion device comprising a combination of any one of claims 1-9.

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