JP2013016744A - 描画装置及びデバイスの製造方法 - Google Patents

描画装置及びデバイスの製造方法 Download PDF

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Publication number
JP2013016744A
JP2013016744A JP2011150339A JP2011150339A JP2013016744A JP 2013016744 A JP2013016744 A JP 2013016744A JP 2011150339 A JP2011150339 A JP 2011150339A JP 2011150339 A JP2011150339 A JP 2011150339A JP 2013016744 A JP2013016744 A JP 2013016744A
Authority
JP
Japan
Prior art keywords
blanking
pattern
substrate
unit
charged particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011150339A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013016744A5 (cg-RX-API-DMAC10.html
Inventor
Yoshihiro Hirata
吉洋 平田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011150339A priority Critical patent/JP2013016744A/ja
Priority to US13/534,033 priority patent/US8658985B2/en
Publication of JP2013016744A publication Critical patent/JP2013016744A/ja
Publication of JP2013016744A5 publication Critical patent/JP2013016744A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31754—Lithography using particular beams or near-field effects, e.g. STM-like techniques using electron beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
JP2011150339A 2011-07-06 2011-07-06 描画装置及びデバイスの製造方法 Pending JP2013016744A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011150339A JP2013016744A (ja) 2011-07-06 2011-07-06 描画装置及びデバイスの製造方法
US13/534,033 US8658985B2 (en) 2011-07-06 2012-06-27 Drawing apparatus and method of manufacturing article

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011150339A JP2013016744A (ja) 2011-07-06 2011-07-06 描画装置及びデバイスの製造方法

Publications (2)

Publication Number Publication Date
JP2013016744A true JP2013016744A (ja) 2013-01-24
JP2013016744A5 JP2013016744A5 (cg-RX-API-DMAC10.html) 2014-10-02

Family

ID=47438863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011150339A Pending JP2013016744A (ja) 2011-07-06 2011-07-06 描画装置及びデバイスの製造方法

Country Status (2)

Country Link
US (1) US8658985B2 (cg-RX-API-DMAC10.html)
JP (1) JP2013016744A (cg-RX-API-DMAC10.html)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015012036A (ja) * 2013-06-26 2015-01-19 キヤノン株式会社 ブランキング装置、描画装置、および物品の製造方法
JP2015133400A (ja) * 2014-01-14 2015-07-23 株式会社アドバンテスト 電子ビーム露光装置
EP3038130A2 (en) 2014-12-24 2016-06-29 Advantest Corporation Exposure apparatus and exposure method
EP3089194A2 (en) 2015-04-27 2016-11-02 Advantest Corporation Device, manufacturing method, and exposure apparatus
KR20160127636A (ko) 2015-04-27 2016-11-04 가부시키가이샤 어드밴티스트 노광 장치 및 노광 방법
US9607807B2 (en) 2014-11-12 2017-03-28 Advantest Corp. Charged particle beam exposure apparatus suitable for drawing on line patterns, and exposure method using the same
EP3147930A1 (en) 2015-09-24 2017-03-29 Advantest Corporation Exposure apparatus and exposure method
EP3200216A1 (en) 2016-01-26 2017-08-02 Advantest Corporation Charged particle beam lens apparatus, charged particle beam column, and charged particle beam exposure apparatus
KR20170093062A (ko) 2016-02-04 2017-08-14 주식회사 아도반테스토 노광장치
US20170323760A1 (en) * 2016-05-09 2017-11-09 Advantest Corporation Multicolumn charged particle beam exposure apparatus
WO2018167936A1 (ja) * 2017-03-17 2018-09-20 株式会社ニコン 露光装置及びリソグラフィ方法、並びにデバイス製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013008878A (ja) * 2011-06-24 2013-01-10 Canon Inc 描画装置、物品の製造方法、及び処理装置
DE102015002702B4 (de) * 2015-03-03 2023-02-02 Carl Zeiss Microscopy Gmbh Partikelstrahlsystem
JP6690984B2 (ja) * 2016-04-15 2020-04-28 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム露光方法及びマルチ荷電粒子ビームのブランキング装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH097538A (ja) * 1995-06-26 1997-01-10 Nippon Telegr & Teleph Corp <Ntt> 荷電ビーム描画装置
JP2005101668A (ja) * 2005-01-07 2005-04-14 Canon Inc 電子ビーム露光装置とその露光方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2001369C2 (nl) * 2007-03-29 2010-06-14 Ims Nanofabrication Ag Werkwijze voor maskerloze deeltjesbundelbelichting.
US8258484B2 (en) * 2008-04-15 2012-09-04 Mapper Lithography Ip B.V. Beamlet blanker arrangement
JP2011517131A (ja) 2008-04-15 2011-05-26 マッパー・リソグラフィー・アイピー・ビー．ブイ． 小ビームブランカ構成体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH097538A (ja) * 1995-06-26 1997-01-10 Nippon Telegr & Teleph Corp <Ntt> 荷電ビーム描画装置
JP2005101668A (ja) * 2005-01-07 2005-04-14 Canon Inc 電子ビーム露光装置とその露光方法

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015012036A (ja) * 2013-06-26 2015-01-19 キヤノン株式会社 ブランキング装置、描画装置、および物品の製造方法
JP2015133400A (ja) * 2014-01-14 2015-07-23 株式会社アドバンテスト 電子ビーム露光装置
US9607807B2 (en) 2014-11-12 2017-03-28 Advantest Corp. Charged particle beam exposure apparatus suitable for drawing on line patterns, and exposure method using the same
EP3038130A2 (en) 2014-12-24 2016-06-29 Advantest Corporation Exposure apparatus and exposure method
KR20160078224A (ko) 2014-12-24 2016-07-04 가부시키가이샤 어드밴티스트 노광 장치 및 노광 방법
JP2016122676A (ja) * 2014-12-24 2016-07-07 株式会社アドバンテスト 露光装置および露光方法
KR20170100464A (ko) 2014-12-24 2017-09-04 인텔 코포레이션 노광 장치 및 노광 방법
EP3089194A2 (en) 2015-04-27 2016-11-02 Advantest Corporation Device, manufacturing method, and exposure apparatus
EP3096344A2 (en) 2015-04-27 2016-11-23 Advantest Corporation Exposure apparatus and exposure method
KR20160127636A (ko) 2015-04-27 2016-11-04 가부시키가이샤 어드밴티스트 노광 장치 및 노광 방법
KR20160127650A (ko) 2015-04-27 2016-11-04 가부시키가이샤 어드밴티스트 소자, 노광 장치 및 제조 방법
EP3147930A1 (en) 2015-09-24 2017-03-29 Advantest Corporation Exposure apparatus and exposure method
KR20170036595A (ko) 2015-09-24 2017-04-03 가부시키가이샤 어드밴티스트 노광 장치 및 노광 방법
EP3200216A1 (en) 2016-01-26 2017-08-02 Advantest Corporation Charged particle beam lens apparatus, charged particle beam column, and charged particle beam exposure apparatus
EP3208826A1 (en) 2016-02-04 2017-08-23 Advantest Corporation Exposure apparatus
KR20170093062A (ko) 2016-02-04 2017-08-14 주식회사 아도반테스토 노광장치
US9799489B2 (en) 2016-02-04 2017-10-24 Advantest Corp. Exposure apparatus
US20170323760A1 (en) * 2016-05-09 2017-11-09 Advantest Corporation Multicolumn charged particle beam exposure apparatus
KR20170126393A (ko) 2016-05-09 2017-11-17 인텔 코포레이션 멀티컬럼 하전 입자 빔 노광 장치
EP3258478A1 (en) 2016-05-09 2017-12-20 Intel Corporation Multicolumn charged particle beam exposure apparatus
US10083813B2 (en) 2016-05-09 2018-09-25 Intel Corporation Multicolumn charged particle beam exposure apparatus
WO2018167936A1 (ja) * 2017-03-17 2018-09-20 株式会社ニコン 露光装置及びリソグラフィ方法、並びにデバイス製造方法

Also Published As

Publication number Publication date
US20130011796A1 (en) 2013-01-10
US8658985B2 (en) 2014-02-25

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