JP2012530364A5 - - Google Patents

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Publication number
JP2012530364A5
JP2012530364A5 JP2012515388A JP2012515388A JP2012530364A5 JP 2012530364 A5 JP2012530364 A5 JP 2012530364A5 JP 2012515388 A JP2012515388 A JP 2012515388A JP 2012515388 A JP2012515388 A JP 2012515388A JP 2012530364 A5 JP2012530364 A5 JP 2012530364A5
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JP
Japan
Prior art keywords
laser
solid
gain medium
treatment device
state laser
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JP2012515388A
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English (en)
Japanese (ja)
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JP5744860B2 (ja
JP2012530364A (ja
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Priority claimed from PCT/EP2010/051825 external-priority patent/WO2010145855A1/en
Application filed filed Critical
Priority claimed from PCT/EP2010/003586 external-priority patent/WO2010145802A1/en
Publication of JP2012530364A publication Critical patent/JP2012530364A/ja
Publication of JP2012530364A5 publication Critical patent/JP2012530364A5/ja
Application granted granted Critical
Publication of JP5744860B2 publication Critical patent/JP5744860B2/ja
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JP2012515388A 2009-06-15 2010-06-15 側面ポンプモノリシック固体レーザー及びその用途 Active JP5744860B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
EPPCT/2009/057398 2009-06-15
EP2009057398 2009-06-15
EPPCT/2010/050458 2010-01-15
EP2010050458 2010-01-15
EPPCT/2010/051825 2010-02-13
PCT/EP2010/051825 WO2010145855A1 (en) 2009-06-15 2010-02-13 Monolithic, side pumped solid-state laser and method for operating the same
PCT/EP2010/003586 WO2010145802A1 (en) 2009-06-15 2010-06-15 A monolithic, side pumped solid-state laser and applications thereof

Publications (3)

Publication Number Publication Date
JP2012530364A JP2012530364A (ja) 2012-11-29
JP2012530364A5 true JP2012530364A5 (enExample) 2013-07-11
JP5744860B2 JP5744860B2 (ja) 2015-07-08

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JP2012515388A Active JP5744860B2 (ja) 2009-06-15 2010-06-15 側面ポンプモノリシック固体レーザー及びその用途

Country Status (6)

Country Link
US (1) US9368931B2 (enExample)
JP (1) JP5744860B2 (enExample)
KR (1) KR101742740B1 (enExample)
CA (1) CA2766958A1 (enExample)
RU (1) RU2012101319A (enExample)
WO (1) WO2010145855A1 (enExample)

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CN114512297B (zh) * 2022-01-17 2022-12-02 华中科技大学 一种基于平顶脉冲磁场的磁增益开关及方法
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